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TWI660804B - Laser processing device - Google Patents

Laser processing device Download PDF

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Publication number
TWI660804B
TWI660804B TW105100540A TW105100540A TWI660804B TW I660804 B TWI660804 B TW I660804B TW 105100540 A TW105100540 A TW 105100540A TW 105100540 A TW105100540 A TW 105100540A TW I660804 B TWI660804 B TW I660804B
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laser light
frequency
pulse
scanner
coordinates
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TW105100540A
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Chinese (zh)
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TW201636141A (en
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能丸圭司
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日商迪思科股份有限公司
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03Observing, e.g. monitoring, the workpiece
    • B23K26/032Observing, e.g. monitoring, the workpiece using optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/0823Devices involving rotation of the workpiece
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/0869Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

提供一種雷射加工裝置,能夠不使裂痕發生而在複數個位置同時形成孔。 Provided is a laser processing apparatus capable of simultaneously forming holes in a plurality of positions without causing cracks.

雷射加工裝置,具備:夾盤平台,將被加工物保持於XY平面;及雷射光線照射手段,對被保持於夾盤平台之被加工物照射雷射光線;雷射光線照射手段,具備:脈衝雷射光線振盪手段,以反覆頻率M振盪脈衝雷射光線;及聚光器,將藉由脈衝雷射光線振盪手段振盪出的脈衝雷射光線予以聚光並照射至被保持於夾盤平台之被加工物;及脈衝分散手段,配設於脈衝雷射光線振盪手段與聚光器之間,將脈衝雷射光線分散至複數個X座標及複數個Y座標;脈衝分散手段具備掃描器,其具有將以反覆頻率M振盪的脈衝雷射光線予以反射之鏡,以比反覆頻率M還低的反覆頻率M1搖動而將脈衝雷射光線分散至(M/M1)個座標。 The laser processing device includes: a chuck platform that holds the workpiece on the XY plane; and a laser light irradiation means that irradiates laser light on the workpiece that is held on the chuck platform; : Pulse laser light oscillation means to oscillate the pulse laser light at repeated frequency M; and a condenser to condense the pulsed laser light oscillated by the pulse laser light oscillation means and irradiate it to the chuck to be held The processed object of the platform; and the pulse dispersing means, which is arranged between the pulse laser ray oscillating means and the condenser, and disperses the pulse laser ray to a plurality of X coordinates and a plurality of Y coordinates; the pulse dispersing means is provided with a scanner It has a mirror that reflects the pulsed laser light oscillating at the repeated frequency M and shakes at a repeated frequency M1 lower than the repeated frequency M to disperse the pulsed laser light to (M / M1) coordinates.

Description

雷射加工裝置 Laser processing device

本發明有關對半導體晶圓等被加工物施以雷射加工之雷射加工裝置。 The present invention relates to a laser processing apparatus for performing laser processing on a workpiece such as a semiconductor wafer.

半導體裝置製造程序中,會在略圓板形狀的半導體晶圓的表面藉由排列成格子狀之分割預定線區隔為複數個區域,而在該區隔出的區域形成IC、LSI等裝置。然後,將半導體晶圓沿著分割預定線切斷,藉此將形成有裝置之區域予以分割而製造各個半導體裝置晶片。 In the semiconductor device manufacturing process, the surface of the semiconductor wafer having a substantially circular plate shape is divided into a plurality of regions by a predetermined division line arranged in a grid shape, and devices such as ICs and LSIs are formed in the separated regions. Then, the semiconductor wafer is cut along a predetermined division line, whereby the area where the device is formed is divided to manufacture each semiconductor device wafer.

為謀求裝置的小型化、高功能化,將複數個半導體晶片層積,而將被層積的複數個半導體裝置的電極予以連接之模組構造正在導入實用。該模組構造係構成為,於半導體晶圓當中從和形成有電極之處相對應的背面照射雷射光線,形成埋設電極之貫通孔,而在該貫通孔埋入與電極連接之銅或鋁等導電性材料(例如專利文獻1)。 In order to achieve miniaturization and high functionality of the device, a module structure in which a plurality of semiconductor wafers are laminated and electrodes of the laminated plurality of semiconductor devices are connected is being put into practical use. The module structure is configured to irradiate laser light from a back surface corresponding to a place where an electrode is formed in a semiconductor wafer to form a through hole in which an electrode is buried, and embed copper or aluminum connected to the electrode in the through hole. And other conductive materials (for example, Patent Document 1).

[先前技術文獻] [Prior technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2008-62261號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2008-62261

但,為了藉由上述般的雷射加工來形成貫通孔,必須對同一處(貫通孔穿設位置)照射複數個脈衝雷射光線,因此理想是提高脈衝雷射光線的反覆頻率以謀求生產性的提升。 However, in order to form a through-hole by laser processing as described above, it is necessary to irradiate a plurality of pulsed laser rays to the same place (through-hole penetration position). Therefore, it is desirable to increase the repetition frequency of the pulsed laser rays to achieve productivity Promotion.

然而,若以高反覆頻率對同一處照射複數次脈衝雷射光線,則會發生熱蓄積裂痕(crack)而有使裝置品質降低之問題。 However, if a plurality of pulsed laser beams are irradiated to the same place at a high repetition frequency, thermal accumulation cracks may occur, and there is a problem that the quality of the device is reduced.

依本發明者之實驗得知,於形成貫通孔時不使其發生裂痕的最大反覆頻率,為10kHz。 According to the experiments of the inventor, it is known that the maximum repetition frequency that does not cause cracks when forming a through hole is 10 kHz.

本發明係有鑑於上述事實而研發,其主要的技術課題在於提供一種雷射加工裝置,能夠不使裂痕發生而在複數個位置同時形成貫通孔。 The present invention has been developed in view of the above-mentioned facts, and a main technical problem thereof is to provide a laser processing device capable of simultaneously forming through-holes at a plurality of positions without causing cracks.

為解決上述主要技術課題,按照本發明,係提供一種雷射加工裝置,具備:夾盤平台,將被加工物保持於XY平面;及雷射光線照射手段,對被保持於該夾盤平台之被加工物照射雷射光線;該雷射光線照射手段,包 含:脈衝雷射光線振盪手段,以反覆頻率M振盪脈衝雷射光線;聚光器,將藉由該脈衝雷射光線振盪手段振盪出的脈衝雷射光線予以聚光並照射至被保持於該夾盤平台之被加工物;及脈衝分散手段,配設於該脈衝雷射光線振盪手段與該聚光器之間,將脈衝雷射光線分散至複數個X座標及複數個Y座標;該脈衝分散手段具備掃描器,其具有將以該反覆頻率M振盪的脈衝雷射光線予以反射之鏡,以比該反覆頻率M還低的反覆頻率M1搖動而將脈衝雷射光線分散至(M/M1)個座標。 In order to solve the above-mentioned main technical problems, according to the present invention, a laser processing device is provided, which includes: a chuck platform that holds a workpiece on an XY plane; and a laser light irradiation means for holding the chuck platform. The processed object irradiates laser light; the laser light irradiating means, including Including: pulsed laser light oscillation means, which oscillates the pulsed laser light at the repeated frequency M; a condenser, which condenses and irradiates the pulsed laser light which is oscillated by the pulsed laser light oscillation means to be held in the The processed object of the chuck platform; and a pulse dispersing means arranged between the pulse laser ray oscillating means and the concentrator, and dispersing the pulse laser ray to a plurality of X coordinates and a plurality of Y coordinates; the pulse The dispersing means includes a scanner having a mirror for reflecting the pulsed laser light oscillating at the repeated frequency M, and shaking at a repeated frequency M1 lower than the repeated frequency M to disperse the pulsed laser light to (M / M1 ) Coordinates.

較佳是,上述脈衝分散手段,具備將脈衝雷射光線分散至複數個Y座標之Y座標分散手段及分散至複數個X座標之X座標分散手段, 該Y座標分散手段,具備以反覆頻率M1搖動之第1主掃描器及以該反覆頻率M1的整數倍的反覆頻率搖動而將脈衝雷射光線分散之第1輔掃描器,令該第1主掃描器與該第1輔掃描器的反覆頻率的相位錯開,以辨明受到脈衝雷射光線照射之Y座標, 該X座標分散手段,具備以反覆頻率M1搖動之第2主掃描器及以該反覆頻率M1的整數倍的反覆頻率搖動而將脈衝雷射光線分散之第2輔掃描器,令該第2主掃描器與該第2輔掃描器的反覆頻率的相位錯開,以辨明受到脈衝雷射光線照射之X座標。 Preferably, the pulse dispersing means includes a Y-coordinate dispersing means for dispersing pulsed laser light to a plurality of Y-coordinates and an X-coordinate dispersing means for dispersing to a plurality of X-coordinates, The Y-coordinate dispersing means includes a first main scanner that is shaken at an iterative frequency M1 and a first auxiliary scanner that is shaken at an iterative frequency that is an integer multiple of the iterative frequency M1 to disperse pulsed laser light, so that the first main scanner The phase of the repeated frequencies of the scanner and the first auxiliary scanner is staggered to identify the Y coordinate of the pulsed laser light, The X-coordinate dispersion means is provided with a second main scanner that is shaken at an iterative frequency M1 and a second auxiliary scanner that is shaken at an iterative frequency that is an integer multiple of the iterative frequency M1 to disperse pulsed laser light, so that the second main scanner The phase of the repeated frequencies of the scanner and the second auxiliary scanner is shifted to identify the X-coordinate that is illuminated by the pulsed laser light.

按本發明之雷射加工裝置,對被保持於以XY平面保持的夾盤平台之被加工物照射雷射光線之雷射光線照射手段,係具備:脈衝雷射光線振盪手段,以反覆頻率M振盪脈衝雷射光線;聚光器,將藉由該脈衝雷射光線振盪手段振盪出的脈衝雷射光線予以聚光並照射至被保持於被加工物保持手段之被加工物;及脈衝分散手段,配設於脈衝雷射光線振盪手段與聚光器之間,將脈衝雷射光線分散至複數個X座標及複數個Y座標;脈衝分散手段具備掃描器,其具有將以反覆頻率M振盪的脈衝雷射光線予以反射之鏡,以比反覆頻率M還低的反覆頻率M1搖動而將脈衝雷射光線分散至(M/M1)個座標,故當在和設定於被加工物的座標相對應之X座標、Y座標位置形成貫通孔時,能夠以不使其產生裂痕的最大反覆頻率對複數個座標同時照射脈衝雷射光線,生產性會提升。 According to the laser processing device of the present invention, a laser light irradiation means for irradiating laser light on a workpiece held on a chuck table held in an XY plane is provided with a pulse laser light oscillation means at an iterative frequency M Oscillating pulsed laser light; a condenser that condenses and irradiates the pulsed laser light oscillated by the pulsed laser light oscillating means and irradiates the workpiece held by the workpiece holding means; and pulse dispersing means Is arranged between the pulse laser ray oscillating means and the condenser to disperse the pulse laser ray to a plurality of X-coordinates and a plurality of Y-coordinates; the pulse dispersing means is provided with a scanner, which has a The pulse laser light is reflected by a mirror that shakes at a repetition frequency M1 lower than the repetition frequency M to disperse the pulse laser light to (M / M1) coordinates, so it should correspond to the coordinates set on the workpiece When a through hole is formed at the X coordinate and the Y coordinate, a plurality of coordinates can be simultaneously irradiated with pulsed laser light at the maximum repetition frequency without causing cracks, and the productivity will be improved.

2‧‧‧靜止基台 2‧‧‧ static abutment

3‧‧‧夾盤平台機構 3‧‧‧ Chuck platform mechanism

36‧‧‧夾盤平台 36‧‧‧Chuck platform

37‧‧‧X軸方向移動手段 37‧‧‧X-axis direction moving means

38‧‧‧Y軸方向移動手段 38‧‧‧Y-axis direction moving means

4‧‧‧雷射光線照射單元 4‧‧‧laser light irradiation unit

5‧‧‧雷射光線照射手段 5‧‧‧Laser light irradiation means

51‧‧‧脈衝雷射光線振盪手段 51‧‧‧Pulse laser light oscillation means

52‧‧‧聚光器 52‧‧‧Condenser

6‧‧‧脈衝分散手段 6‧‧‧ Pulse Dispersion Means

7‧‧‧Y座標分散手段 7‧‧‧Y Coordinate Dispersion Means

71‧‧‧第1輔共振掃描器 71‧‧‧1st auxiliary resonance scanner

72‧‧‧第2輔共振掃描器 72‧‧‧ 2nd auxiliary resonance scanner

73‧‧‧主共振掃描器 73‧‧‧main resonance scanner

8‧‧‧X座標分散手段 8‧‧‧X coordinate dispersion method

81‧‧‧第1輔共振掃描器 81‧‧‧1st auxiliary resonance scanner

82‧‧‧第2輔共振掃描器 82‧‧‧Second auxiliary resonance scanner

83‧‧‧主共振掃描器 83‧‧‧Main resonance scanner

9‧‧‧光路偏向手段 9‧‧‧ light path deflection

10‧‧‧控制手段 10‧‧‧Control

20‧‧‧半導體晶圓 20‧‧‧Semiconductor wafer

[圖1]本發明實施形態之雷射加工裝置立體圖。 [Fig. 1] A perspective view of a laser processing apparatus according to an embodiment of the present invention.

[圖2]配備於圖1所示雷射加工裝置之雷射光線照射手段的方塊構成圖。 [Fig. 2] A block configuration diagram of a laser light irradiation means provided in the laser processing apparatus shown in Fig. 1. [Fig.

[圖3]構成圖2所示雷射光線照射手段之Y座標分散手段示意方塊構成圖。 [Fig. 3] A schematic block diagram of the Y-coordinate dispersion means constituting the laser light irradiation means shown in Fig. 2. [Fig.

[圖4]構成圖3所示Y座標分散手段之第1輔共振掃描器的反覆頻率M01(30kHz)、及第2輔共振掃描器 的反覆頻率M02(20kHz)、及主共振掃描器的反覆頻率M1(10kHz)、以及將各反覆頻率M01(30kHz)與M02(20kHz)以及M1(10kHz)總計而成之總計反覆頻率MY示意圖。 [Fig. 4] The iterative frequency M01 (30kHz) of the first auxiliary resonance scanner and the second auxiliary resonance scanner constituting the Y-coordinate dispersion means shown in Fig. 3 Schematic diagram of the iterative frequency M02 (20kHz), the iterative frequency M1 (10kHz) of the main resonance scanner, and the total iterative frequency MY obtained by summing each of the iterative frequencies M01 (30kHz), M02 (20kHz), and M1 (10kHz).

[圖5]構成圖2所示雷射光線照射手段之X座標分散手段示意方塊構成圖。 [Fig. 5] A schematic block diagram of the X-coordinate dispersion means constituting the laser light irradiation means shown in Fig. 2. [Fig.

[圖6]構成圖5所示X座標分散手段之第1輔共振掃描器的反覆頻率M01(30kHz)、及第2輔共振掃描器的反覆頻率M02(20kHz)、及主共振掃描器的反覆頻率M1(10kHz)、以及將各反覆頻率M01(30kHz)與M02(20kHz)以及M1(10kHz)總計而成之總計反覆頻率MX示意圖。 [Fig. 6] The iterative frequency M01 (30kHz) of the first auxiliary resonance scanner and the iterative frequency M02 (20kHz) of the second auxiliary resonance scanner constituting the X-coordinate dispersion means shown in Fig. 5 and the iteration of the main resonance scanner Schematic diagram of frequency M1 (10kHz) and total iterative frequency MX obtained by summing each iterative frequency M01 (30kHz), M02 (20kHz) and M1 (10kHz).

[圖7]藉由由圖3所示Y座標分散手段與圖5所示X座標分散手段所構成之脈衝分散手段,照射從脈衝雷射光線振盪手段振盪出的脈衝雷射光線之座標示意說明圖。 [Fig. 7] By means of a pulse dispersing means composed of the Y-coordinate dispersing means shown in Fig. 3 and the X-coordinate dispersing means shown in Fig. 5, the coordinates of the pulsed laser light oscillated from the pulsed laser light oscillating means are exemplified. Illustration.

[圖8]配備於圖1所示雷射加工裝置之控制手段的方塊構成圖。 [Fig. 8] A block configuration diagram of control means provided in the laser processing apparatus shown in Fig. 1. [Fig.

[圖9]作為被加工物之半導體晶圓的立體圖。 [FIG. 9] A perspective view of a semiconductor wafer as a workpiece.

[圖10]將圖9所示半導體晶圓貼附在裝配於環狀框架的黏著膠帶之狀態示意立體圖。 [Fig. 10] A schematic perspective view of a state where the semiconductor wafer shown in Fig. 9 is attached to an adhesive tape mounted on a ring frame.

[圖11]藉由圖1所示雷射加工裝置而實施之雷射加工工程說明圖。 [Fig. 11] An explanatory diagram of a laser processing process performed by the laser processing apparatus shown in Fig. 1. [Fig.

以下參照所附圖面,詳細說明遵照本發明而構成之雷射加工裝置的良好實施形態。 Hereinafter, a preferred embodiment of a laser processing apparatus constructed in accordance with the present invention will be described in detail with reference to the attached drawings.

圖1揭示本發明實施形態之雷射加工裝置1立體圖。圖1所示之雷射加工裝置1,具備:靜止基台2;及夾盤平台(chuck table)機構3,配設於該靜止基台2而可朝箭頭X所示加工饋送方向亦即X軸方向移動,並保持被加工物;及雷射光線照射單元4,配設於基台2上,作為雷射光線照射手段。 FIG. 1 illustrates a perspective view of a laser processing apparatus 1 according to an embodiment of the present invention. The laser processing apparatus 1 shown in FIG. 1 includes: a stationary base 2; and a chuck table mechanism 3, which is arranged on the stationary base 2 and can be oriented toward the processing feed direction indicated by arrow X, that is, X It moves in the axial direction and holds the workpiece; and a laser light irradiation unit 4 is arranged on the base 2 as a laser light irradiation means.

上述夾盤平台機構3,具備:一對導軌31、31,沿X軸方向平行配設於靜止基台2上;及第1滑動塊32,配設於該導軌31、31上而可朝X軸方向移動;及第2滑動塊33,配設於該第1滑動塊32上而可朝和X軸方向正交之箭頭Y所示分度(indexing)饋送方向亦即Y軸方向移動;及支撐平台35,在該第2滑動塊33上受到圓筒構件34支撐;及夾盤平台36,作為將被加工物保持在XY平面之被加工物保持手段。該夾盤平台36具備由多孔性材料形成之吸附夾盤361,而在吸附夾盤361的上面亦即保持面上將被加工物亦即例如圓形狀的半導體晶圓藉由未圖示之吸附手段予以保持。像這樣構成的夾盤平台36,是藉由配設於圓筒構件34內之未圖示脈衝電動機令其旋轉。另,在夾盤平台36配設有夾鉗362,用來固定環狀的框架,該環狀的框架係透過保護膠帶支撐半導體晶圓等被加工物。 The chuck platform mechanism 3 includes: a pair of guide rails 31 and 31 arranged on the stationary base 2 in parallel along the X-axis direction; and a first sliding block 32 arranged on the guide rails 31 and 31 so as to face the X Axis direction movement; and a second slide block 33 disposed on the first slide block 32 so as to be able to move in an indexing feeding direction indicated by an arrow Y orthogonal to the X-axis direction, that is, the Y-axis direction; and The support platform 35 is supported by the cylindrical member 34 on the second sliding block 33, and the chuck platform 36 is a workpiece holding means for holding the workpiece on the XY plane. The chuck platform 36 is provided with an adsorption chuck 361 formed of a porous material, and an upper surface of the adsorption chuck 361, that is, a holding surface, sucks a processed object, for example, a circular semiconductor wafer by suction (not shown). Means to keep it. The chuck platform 36 configured as described above is rotated by a pulse motor (not shown) arranged in the cylindrical member 34. The chuck platform 36 is provided with a clamp 362 for fixing an annular frame that supports a workpiece such as a semiconductor wafer through a protective tape.

上述第1滑動塊32,在其下面設有與上述一 對導軌31、31嵌合之一對被導引溝321、321,且在其上面設有沿Y軸方向平行形成之一對導軌322、322。像這樣構成的第1滑動塊32,係構成為藉由被導引溝321、321嵌合至一對導軌31、31,而可沿著一對導軌31、31朝X軸方向移動。本實施形態中的夾盤平台機構3,具備X軸方向移動手段37,用來令第1滑動塊32沿著一對導軌31、31朝X軸方向移動。X軸方向移動手段37,包含:公螺桿371,平行配設於上述一對導軌31與31之間;及脈衝電動機372等驅動源,用來將該公螺桿371旋轉驅動。公螺桿371,其一端被支撐在固定於上述靜止基台2之軸承塊373而旋轉自如,其另一端和上述脈衝電動機372的輸出軸傳動連結。另,公螺桿371,與在第1滑動塊32的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故,藉由脈衝電動機372將公螺桿371正轉及反轉驅動,藉此令第1滑動塊32沿著導軌31、31朝X軸方向移動。 The first sliding block 32 is provided below the first sliding block 32 with the first sliding block 32. A pair of guide grooves 321 and 321 are fitted to the guide rails 31 and 31, and a pair of guide rails 322 and 322 are formed on the guide grooves 321 and 321 in parallel along the Y-axis direction. The first slide block 32 configured as described above is configured to be movable in the X-axis direction along the pair of guide rails 31 and 31 by being fitted to the pair of guide rails 31 and 31 by the guided grooves 321 and 321. The chuck platform mechanism 3 in the present embodiment includes an X-axis direction moving means 37 for moving the first slider 32 along the pair of guide rails 31 and 31 in the X-axis direction. The X-axis direction moving means 37 includes a male screw 371 disposed in parallel between the pair of guide rails 31 and 31, and a driving source such as a pulse motor 372 for rotating and driving the male screw 371. One end of the male screw 371 is rotatably supported by a bearing block 373 fixed to the stationary base 2, and the other end is drivingly connected to the output shaft of the pulse motor 372. In addition, the male screw 371 is screw-engaged with a through female screw hole formed on a female screw block (not shown) protrudingly provided on the lower surface of the central portion of the first slide block 32. Therefore, the male screw 371 is driven forward and reverse by the pulse motor 372, so that the first slide block 32 is moved along the guide rails 31 and 31 in the X-axis direction.

雷射加工裝置1,具備X軸方向位置檢測手段374,用來檢測上述夾盤平台36的X軸方向位置。X軸方向位置檢測手段374,係由沿著導軌31配設之線性標尺(linear scale)374a、及配設於第1滑動塊32而和第1滑動塊32共同沿著線性標尺374a移動之讀取頭374b所構成。該X軸方向位置檢測手段374的讀取頭374b,於本實施形態中是每隔1μm將1脈衝的脈衝訊號送至後述控制手段。然後後述控制手段計數輸入的脈衝訊 號,藉此檢測夾盤平台36的X軸方向位置。另,當使用了脈衝電動機372作為上述加工饋送手段37的驅動源的情形下,計數對脈衝電動機372輸出驅動訊號之後述控制手段的驅動脈衝,藉此也能檢測夾盤平台36的X軸方向位置。此外,當使用了伺服電動機作為上述X軸方向移動手段37的驅動源的情形下,將檢測伺服電動機的旋轉數之旋轉編碼器所輸出的脈衝訊號送至後述控制手段,而控制手段計數輸入的脈衝訊號,藉此也能檢測夾盤平台36的X軸方向位置。 The laser processing apparatus 1 includes an X-axis direction position detection means 374 for detecting the X-axis position of the chuck table 36. The position detection means 374 in the X-axis direction is read by a linear scale 374a provided along the guide rail 31 and a first slide block 32 that moves along the linear scale 374a together with the first slide block 32. It consists of a head 374b. In the present embodiment, the read head 374b of the X-axis direction position detection means 374 sends a pulse signal of one pulse every 1 μm to a control means described later. Then, the control means described later counts the input pulse signal. No., thereby detecting the X-axis position of the chuck platform 36. When the pulse motor 372 is used as the drive source of the processing feed means 37, the drive pulses of the control means described later are output to the pulse motor 372, and the X-axis direction of the chuck table 36 can also be detected. position. In addition, when a servo motor is used as the driving source of the X-axis direction moving means 37, a pulse signal output from a rotary encoder that detects the rotation number of the servo motor is sent to a control means described later, and the control means counts the input The pulse signal can also detect the position in the X-axis direction of the chuck table 36.

上述第2滑動塊33,在其下面設有與設於上述第1滑動塊32的上面的一對導軌322、322嵌合之一對被導引溝331、331,藉由將該被導引溝331、331嵌合至一對導軌322、322,而構成為可朝Y軸方向移動。夾盤平台機構3,具備Y軸方向移動手段38,用來令第2滑動塊33沿著設於第1滑動塊32之一對導軌322、322朝Y軸方向移動。Y軸方向移動手段38,包含:公螺桿381,平行配設於上述一對導軌322與322之間;及脈衝電動機382等驅動源,用來將該公螺桿381旋轉驅動。公螺桿381,其一端被支撐在固定於上述第1滑動塊32的上面之軸承塊383而旋轉自如,其另一端和上述脈衝電動機382的輸出軸傳動連結。另,公螺桿381,與在第2滑動塊33的中央部下面突出設置之未圖示母螺牙塊上形成的貫通母螺牙孔螺合。是故,藉由脈衝電動機382將公螺桿381正轉及反轉驅動,藉此令第2滑動塊33沿著導軌322、322 朝Y軸方向移動。 The second sliding block 33 is provided with a pair of guided grooves 331 and 331 fitted on the lower surface of the second sliding block 33 and fitted with a pair of guide rails 322 and 322 provided on the upper surface of the first sliding block 32. The grooves 331 and 331 are fitted to the pair of guide rails 322 and 322 and are configured to be movable in the Y-axis direction. The chuck platform mechanism 3 is provided with a Y-axis direction moving means 38 for moving the second slider 33 along the pair of guide rails 322 and 322 provided on the first slider 32 in the Y-axis direction. The Y-axis direction moving means 38 includes a male screw 381 disposed in parallel between the pair of guide rails 322 and 322 and a driving source such as a pulse motor 382 for rotating and driving the male screw 381. One end of the male screw 381 is rotatably supported by a bearing block 383 fixed to the upper surface of the first sliding block 32, and the other end is drivingly connected to the output shaft of the pulse motor 382. In addition, the male screw 381 is screw-engaged with a through female screw hole formed on a female screw block (not shown) protrudingly provided on the lower surface of the central portion of the second slide block 33. Therefore, the male screw 381 is driven forward and reverse by the pulse motor 382, so that the second sliding block 33 is guided along the guide rails 322, 322. Move in the Y-axis direction.

雷射加工裝置1,具備Y軸方向位置檢測手段384,用來檢測上述第2滑動塊33的Y軸方向位置。Y軸方向位置檢測手段384,係由沿著導軌322配設之線性標尺384a、及配設於第2滑動塊33而和第2滑動塊33共同沿著線性標尺384a移動之讀取頭384b所構成。該Y軸方向位置檢測手段384的讀取頭384b,於本實施形態中是每隔1μm將1脈衝的脈衝訊號送至後述控制手段。然後後述控制手段計數輸入的脈衝訊號,藉此檢測夾盤平台36的Y軸方向位置。另,當使用了脈衝電動機382作為上述Y軸方向移動手段38的驅動源的情形下,計數對脈衝電動機382輸出驅動訊號之後述控制手段的驅動脈衝,藉此也能檢測夾盤平台36的Y軸方向位置。此外,當使用了伺服電動機作為上述Y軸方向移動手段38的驅動源的情形下,將檢測伺服電動機的旋轉數之旋轉編碼器所輸出的脈衝訊號送至後述控制手段,而控制手段計數輸入的脈衝訊號,藉此也能檢測夾盤平台36的Y軸方向位置。 The laser processing apparatus 1 includes a Y-axis direction position detection means 384 for detecting the Y-axis direction position of the second slider 33. The position detection means 384 in the Y-axis direction is composed of a linear scale 384a arranged along the guide rail 322 and a reading head 384b arranged on the second slide block 33 and moving along the linear scale 384a together with the second slide block 33. Make up. In this embodiment, the read head 384b of the Y-axis-direction position detecting means 384 sends a pulse signal of one pulse every 1 μm to a control means described later. Then, the control means described later counts the input pulse signals, thereby detecting the Y-axis position of the chuck table 36. In addition, when the pulse motor 382 is used as the driving source of the Y-axis direction moving means 38, the drive pulses of the control means described later after the drive signal is output to the pulse motor 382 are counted, whereby the Y of the chuck table 36 can also be detected. Axis direction position. In addition, when a servo motor is used as the driving source of the Y-axis direction moving means 38, a pulse signal output from a rotary encoder that detects the rotation number of the servo motor is sent to a control means described later, and the control means counts the input The pulse signal can also detect the position in the Y-axis direction of the chuck table 36.

上述雷射光線照射單元4,具備:支撐構件41,配設於上述基台2上;及外殼42,受到該支撐構件41支撐,實質上水平地延伸;及雷射光線照射手段5,配設於該外殼42;及拍攝手段50,配設於外殼42的前端部而檢測應做雷射加工之加工區域。另,拍攝手段50,具備照明被加工物之照明手段、及捕捉受到該照明手段照明 的區域之光學系統、及拍攝被該光學系統捕捉到的像之拍攝元件(CCD)等,而將拍攝出的圖像訊號送至後述控制手段。 The laser light irradiation unit 4 includes: a support member 41 disposed on the base 2; and a housing 42 supported by the support member 41 to extend substantially horizontally; and a laser light irradiation means 5 disposed. The casing 42 and the photographing means 50 are disposed at the front end of the casing 42 to detect a processing area where laser processing should be performed. In addition, the imaging means 50 includes an illumination means for illuminating the workpiece, and capturing the illumination received by the illumination means. The optical system in the area and the imaging element (CCD) that captures the image captured by the optical system, etc., and sends the captured image signal to the control means described later.

針對上述雷射光線照射手段5,參照圖2說明之。雷射光線照射手段5,如圖2所示,具備:脈衝雷射光線振盪手段51;及聚光器52,將從該脈衝雷射光線振盪手段51振盪出的脈衝雷射光線予以聚光而照射至保持於夾盤平台36之被加工物W;及脈衝分散手段6,配設於脈衝雷射光線振盪手段51與聚光器52之間,將從脈衝雷射光線振盪手段51振盪出的脈衝雷射光線分散至複數個Y座標及X座標;及光路偏向手段9,將藉由該脈衝分散手段6而分散出的脈衝雷射光線朝X軸方向偏向。脈衝雷射光線振盪手段51,係由脈衝雷射振盪器511、及附設於其之反覆頻率設定手段512所構成。另,脈衝雷射光線振盪手段51的脈衝雷射振盪器511,於本實施形態中係振盪波長為355nm的脈衝雷射光線LB。此外,脈衝雷射光線振盪手段51所振盪的脈衝雷射光線LB的反覆頻率M,於本實施形態中係設定為40kHz。上述聚光器52,具備由fθ透鏡所構成之聚光透鏡521,將從上述脈衝雷射光線振盪手段51振盪而透過Y座標分散手段7及X座標分散手段8及光路偏向手段9而受到引導之脈衝雷射光線LB予以聚光。 The laser light irradiation means 5 will be described with reference to FIG. 2. As shown in FIG. 2, the laser light irradiation means 5 includes a pulse laser light oscillation means 51 and a condenser 52 that condenses the pulse laser light oscillated from the pulse laser light oscillation means 51 and The workpiece W irradiated to the chuck platform 36 is irradiated; and the pulse dispersing means 6 is arranged between the pulse laser light oscillating means 51 and the condenser 52, and the laser beam oscillating from the pulse laser light oscillating means 51 is oscillated. The pulsed laser light is scattered to a plurality of Y and X coordinates; and the optical path deflection means 9 deflects the pulsed laser light scattered by the pulse dispersing means 6 toward the X-axis direction. The pulse laser light oscillating means 51 is composed of a pulse laser oscillator 511 and an iterative frequency setting means 512 attached thereto. The pulse laser oscillator 511 of the pulse laser light oscillating means 51 is a pulse laser light LB having an oscillation wavelength of 355 nm in this embodiment. The repeated frequency M of the pulsed laser beam LB oscillated by the pulsed laser beam oscillating means 51 is set to 40 kHz in this embodiment. The condenser 52 includes a condenser lens 521 composed of an fθ lens, and is guided by the pulse laser light oscillating means 51 and transmitted through the Y-coordinate dispersing means 7 and X-coordinate dispersing means 8 and the optical path deflection means 9. The pulsed laser light LB is focused.

配設於上述脈衝雷射光線振盪手段51與聚光器52之間的脈衝分散手段6,於本實施形態中係由將從 脈衝雷射光線振盪手段51振盪出的脈衝雷射光線LB分散至複數個Y座標之Y座標分散手段7、及將藉由該Y座標分散手段7分散至Y座標的脈衝雷射光線LB分散至複數個X座標之X座標分散手段8所構成。Y座標分散手段7,如圖3所示,具備:第1輔共振掃描器71,備有反射鏡711;及第2輔共振掃描器72,備有反射鏡721;及主共振掃描器73,備有反射鏡731。 The pulse dispersing means 6 disposed between the above-mentioned pulse laser ray oscillating means 51 and the condenser 52, in this embodiment, The pulsed laser ray LB oscillated by the pulsed laser ray oscillating means 51 is dispersed to a plurality of Y-coordinate dispersion means 7, and the pulsed laser ray LB dispersed to the Y-coordinate by the Y-coordinate dispersion means 7 is dispersed to The X-coordinate dispersion means 8 of a plurality of X-coordinates is constituted. The Y coordinate dispersing means 7, as shown in FIG. 3, includes: a first auxiliary resonance scanner 71 provided with a reflecting mirror 711; and a second auxiliary resonance scanner 72 provided with a reflecting mirror 721; and a main resonance scanner 73, Reflector 731 is available.

係構成為,上述第1輔共振掃描器71因應藉由頻率設定器712設定的反覆頻率而搖動,第2輔共振掃描器72因應藉由頻率設定器722設定的反覆頻率而搖動,主共振掃描器73因應藉由頻率設定器732設定的反覆頻率而搖動。頻率設定器712將第1輔共振掃描器71的反覆頻率M01設定為30kHz,頻率設定器722將第2輔共振掃描器72的反覆頻率M02設定為20kHz,頻率設定器732將主共振掃描器73的反覆頻率M1設定為10kHz。第1輔共振掃描器71的反覆頻率M01與第2輔共振掃描器72的反覆頻率M02,係設定為主共振掃描器73的反覆頻率M1的整數倍。 The system is configured such that the first auxiliary resonance scanner 71 is shaken in response to the repeated frequency set by the frequency setter 712, and the second auxiliary resonance scanner 72 is shaken in response to the repeated frequency set by the frequency setter 722, and the main resonance scan The device 73 is shaken in response to the repeated frequency set by the frequency setter 732. The frequency setter 712 sets the repeated frequency M01 of the first auxiliary resonance scanner 71 to 30 kHz, the frequency setter 722 sets the repeated frequency M02 of the second auxiliary resonance scanner 72 to 20 kHz, and the frequency setter 732 sets the main resonance scanner 73 The repeated frequency M1 is set to 10kHz. The repeated frequency M01 of the first auxiliary resonance scanner 71 and the repeated frequency M02 of the second auxiliary resonance scanner 72 are set to an integer multiple of the repeated frequency M1 of the main resonance scanner 73.

以上述反覆頻率M1搖動之主共振掃描器73,係將脈衝雷射光線振盪手段51以反覆頻率M振盪出的脈衝雷射光線LB分散至(M/M1)個Y座標。本實施形態中,脈衝雷射光線振盪手段51所振盪的脈衝雷射光線LB的反覆頻率M設定為40kHz,主共振掃描器73的反覆頻率M1設定為10kHz,故主共振掃描器73會每隔 (1/4)×(1/10k)秒分散至4個(40/10)Y座標。另,藉由主共振掃描器73而分散之4個Y座標的間隔,於本實施形態中係設定為相當於設於後述被加工物亦即半導體晶圓之裝置的銲墊的Y座標的間隔。 The main resonance scanner 73 shaken at the above-mentioned repeated frequency M1 is to disperse the pulsed laser light LB oscillated by the pulsed laser light oscillating means 51 at the repeated frequency M to (M / M1) Y-coordinates. In this embodiment, the repetition frequency M of the pulsed laser beam LB oscillated by the pulse laser ray oscillation means 51 is set to 40 kHz, and the repetition frequency M1 of the main resonance scanner 73 is set to 10 kHz. Therefore, the main resonance scanner 73 (1/4) × (1 / 10k) seconds are scattered to 4 (40/10) Y coordinates. In addition, in this embodiment, the intervals of the four Y-coordinates dispersed by the main resonance scanner 73 are set to correspond to the intervals of the Y-coordinates of the pads provided on a semiconductor wafer, which is a to-be-processed object. .

Y座標分散手段7如以上般構成,從脈衝雷射光線振盪手段51振盪出的脈衝雷射光線LB入射至第1輔共振掃描器71的反射鏡711。入射至第1輔共振掃描器71的反射鏡711之脈衝雷射光線LB,透過第2輔共振掃描器72的反射鏡721及主共振掃描器73的反射鏡731而射出。 The Y-coordinate dispersion means 7 is configured as described above, and the pulsed laser beam LB oscillated from the pulsed laser beam oscillating means 51 enters the mirror 711 of the first auxiliary resonance scanner 71. The pulsed laser light LB incident on the mirror 711 of the first auxiliary resonance scanner 71 passes through the mirror 721 of the second auxiliary resonance scanner 72 and the mirror 731 of the main resonance scanner 73 and is emitted.

圖4中揭示第1輔共振掃描器71的反覆頻率M01(30kHz)、及第2輔共振掃描器72的反覆頻率M02(20kHz)、及主共振掃描器73的反覆頻率M1(10kHz)、以及將各反覆頻率M01(30kHz)及M02(20kHz)以及M1(10kHz)總計而成之總計反覆頻率MY示意圖。圖4中橫軸為時間(1/10k)秒,縱軸表示Y座標。從上述脈衝雷射光線振盪手段51振盪出的脈衝雷射光線LB,會從主共振掃描器73的反射鏡731每隔(1/4)×(1/10k)秒射出4個(I II III IV)至和總計而成的總計反覆頻率MY相對應之Y座標。 FIG. 4 discloses the iterative frequency M01 (30 kHz) of the first auxiliary resonance scanner 71, the iterative frequency M02 (20 kHz) of the second auxiliary resonance scanner 72, and the iterative frequency M1 (10 kHz) of the main resonance scanner 73, and Schematic diagram of the total iterative frequency MY obtained by summing each of the iterative frequencies M01 (30 kHz), M02 (20 kHz), and M1 (10 kHz). In FIG. 4, the horizontal axis represents time (1 / 10k) seconds, and the vertical axis represents the Y coordinate. The pulsed laser light LB oscillated from the pulsed laser light oscillating means 51 described above emits four (I II III) from the mirror 731 of the main resonance scanner 73 every (1/4) × (1 / 10k) seconds. IV) The Y coordinate corresponding to the total iterative frequency MY which is the total.

另,從主共振掃描器73的反射鏡731射出之脈衝雷射光線LB的4個(I II III IV)Y座標,能夠藉由將主共振掃描器73的反覆頻率M1(10kHz)及第1輔共振掃描器71的反覆頻率M01(30kHz)以及第2輔共振掃描器 72的反覆頻率M02(20kHz)的相位予以錯開而辨明。 In addition, the four (I II III IV) Y coordinates of the pulsed laser beam LB emitted from the mirror 731 of the main resonance scanner 73 can be obtained by setting the repeated frequency M1 (10 kHz) of the main resonance scanner 73 and the first Repeated frequency M01 (30kHz) of auxiliary resonance scanner 71 and second auxiliary resonance scanner The phase of the iterative frequency M02 (20kHz) of 72 is staggered and discerned.

接著參照圖5,說明構成上述脈衝分散手段6之X座標分散手段8。X座標分散手段8,於本實施形態中係構成為將上述Y座標分散手段7以從脈衝雷射光線振盪手段51射出的雷射光線LB的光路作為旋轉軸而旋動90度而成之狀態來配設,具備:第1輔共振掃描器81,備有反射鏡811;及第2輔共振掃描器82,備有反射鏡821;及主共振掃描器83,備有反射鏡831。 Next, the X-coordinate dispersion means 8 constituting the pulse dispersion means 6 will be described with reference to FIG. 5. The X-coordinate dispersing means 8 is configured in this embodiment so that the Y-coordinate dispersing means 7 rotates 90 degrees with the optical path of the laser beam LB emitted from the pulse laser beam oscillating means 51 as a rotation axis. It is provided with: a first auxiliary resonance scanner 81 provided with a reflecting mirror 811; a second auxiliary resonance scanner 82 provided with a reflecting mirror 821; and a main resonance scanner 83 provided with a reflecting mirror 831.

係構成為,上述第1輔共振掃描器81因應藉由頻率設定器812設定的反覆頻率而搖動,第2輔共振掃描器82因應藉由頻率設定器822設定的反覆頻率而搖動,主共振掃描器83因應藉由頻率設定器832設定的反覆頻率而搖動。頻率設定器812將第1輔共振掃描器81的反覆頻率M01設定為30kHz,頻率設定器822將第2輔共振掃描器82的反覆頻率M02設定為20kHz,頻率設定器832將主共振掃描器83的反覆頻率M1設定為10kHz。第1輔共振掃描器81的反覆頻率M01與第2輔共振掃描器82的反覆頻率M02,係設定為主共振掃描器83的反覆頻率M1的整數倍。 The system is configured such that the first auxiliary resonance scanner 81 is shaken in response to the repeated frequency set by the frequency setter 812, and the second auxiliary resonance scanner 82 is shaken in response to the repeated frequency set by the frequency setter 822, and the main resonance scan The device 83 is shaken in response to the repeated frequency set by the frequency setter 832. The frequency setter 812 sets the repeated frequency M01 of the first auxiliary resonance scanner 81 to 30 kHz, the frequency setter 822 sets the repeated frequency M02 of the second auxiliary resonance scanner 82 to 20 kHz, and the frequency setter 832 sets the main resonance scanner 83 The repeated frequency M1 is set to 10kHz. The repeated frequency M01 of the first auxiliary resonance scanner 81 and the repeated frequency M02 of the second auxiliary resonance scanner 82 are set to an integer multiple of the repeated frequency M1 of the main resonance scanner 83.

以上述反覆頻率M1搖動之主共振掃描器83,係將脈衝雷射光線振盪手段51以反覆頻率M振盪出的脈衝雷射光線LB分散至(M/M1)個X座標。本實施形態中,脈衝雷射光線振盪手段51所振盪的脈衝雷射光線LB的反覆頻率M設定為40kHz,主共振掃描器83的 反覆頻率M1設定為10kHz,故主共振掃描器83會每隔(1/4)×(1/10k)秒分散至4個(40/10)X座標。另,藉由主共振掃描器83而分散之4個X座標的間隔,於本實施形態中係設定為相當於設於後述被加工物亦即半導體晶圓之裝置的銲墊的X座標的間隔。 The main resonance scanner 83 shaken at the above-mentioned repeated frequency M1 is to disperse the pulsed laser light LB oscillated by the pulsed laser light oscillating means 51 at the repeated frequency M to (M / M1) X-coordinates. In this embodiment, the repetition frequency M of the pulsed laser beam LB oscillated by the pulsed laser beam oscillating means 51 is set to 40 kHz. The iterative frequency M1 is set to 10 kHz, so the main resonance scanner 83 is scattered to 4 (40/10) X coordinates every (1/4) × (1 / 10k) seconds. In addition, in this embodiment, the intervals of the four X-coordinates dispersed by the main resonance scanner 83 are set to correspond to the intervals of the X-coordinates of the pads provided on a semiconductor wafer, which is a to-be-processed object. .

圖5所示實施形態中的X座標分散手段8如以上般構成,從上述Y座標分散手段7射出的脈衝雷射光線LB入射至第1輔共振掃描器81的反射鏡811。入射至第1輔共振掃描器81的反射鏡811之脈衝雷射光線LB,透過第2輔共振掃描器82的反射鏡821及主共振掃描器83的反射鏡831而射出。 The X-coordinate dispersion means 8 in the embodiment shown in FIG. 5 is configured as described above, and the pulsed laser light LB emitted from the Y-coordinate dispersion means 7 enters the mirror 811 of the first auxiliary resonance scanner 81. The pulsed laser light LB incident on the mirror 811 of the first auxiliary resonance scanner 81 passes through the mirror 821 of the second auxiliary resonance scanner 82 and the mirror 831 of the main resonance scanner 83 and is emitted.

圖6中揭示第1輔共振掃描器81的反覆頻率M01(30kHz)、及第2輔共振掃描器82的反覆頻率M02(20kHz)、及主共振掃描器83的反覆頻率M1(10kHz)、以及將各反覆頻率M01(30kHz)及M02(20kHz)以及M1(10kHz)總計而成之總計反覆頻率MX示意圖。圖6中橫軸為時間(1/10k)秒,縱軸表示X座標。從上述脈衝雷射光線振盪手段51振盪出的脈衝雷射光線LB,從主共振掃描器83的反射鏡831每隔(1/4)×(1/10k)秒射出4個(I II III IV)至和總計而成的總計反覆頻率MX相對應之X座標。 FIG. 6 shows the iterative frequency M01 (30 kHz) of the first auxiliary resonance scanner 81, the iterative frequency M02 (20 kHz) of the second auxiliary resonance scanner 82, and the iterative frequency M1 (10 kHz) of the main resonance scanner 83, and Schematic diagram of the total iterative frequency MX obtained by summing each iterative frequency M01 (30kHz), M02 (20kHz), and M1 (10kHz). In FIG. 6, the horizontal axis represents time (1 / 10k) seconds, and the vertical axis represents the X coordinate. Four pulsed laser beams LB oscillated from the pulsed laser beam oscillating means 51 are emitted from the mirror 831 of the main resonance scanner 83 at intervals of (1/4) × (1 / 10k) seconds (I II III IV ) To the X coordinate corresponding to the total iterative frequency MX and the total.

另,從主共振掃描器83的反射鏡831射出之脈衝雷射光線LB的4個(I II III IV)X座標,能夠藉由將主共振掃描器83的反覆頻率M1(10kHz)及第1輔共振掃描 器81的反覆頻率M01(30kHz)以及第2輔共振掃描器82的反覆頻率M02(20kHz)的相位予以錯開而辨明。 In addition, the four (I II III IV) X coordinates of the pulsed laser beam LB emitted from the mirror 831 of the main resonance scanner 83 can be obtained by setting the repeated frequency M1 (10 kHz) of the main resonance scanner 83 and the first Auxiliary resonance scan The phases of the repeated frequency M01 (30 kHz) of the scanner 81 and the repeated frequency M02 (20 kHz) of the second auxiliary resonance scanner 82 are staggered and distinguished.

由上述Y座標分散手段7及X座標分散手段8所構成之脈衝分散手段6係如以上般構成,將從脈衝雷射光線振盪手段51振盪出的脈衝雷射光線LB透過光路偏向手段9及聚光器52每隔(1/10k)秒照射4個(I II III IV)至圖7所示XY座標。 The pulse dispersing means 6 composed of the Y-coordinate dispersing means 7 and the X-coordinate dispersing means 8 is configured as described above, and the pulse laser beam LB oscillated from the pulse laser ray oscillating means 51 passes through the optical path deflection means 9 and condenses The optical device 52 irradiates 4 (I II III IV) to the XY coordinates shown in FIG. 7 every (1 / 10k) seconds.

回到圖2繼續說明,光路偏向手段9,於本實施形態中係由檢流計式掃描器(galvano scanner)91所構成。令該檢流計式掃描器91從實線所示位置位移至虛線所示位置,藉此將脈衝雷射光線從實線所示位置朝X軸方向偏向至虛線所示位置而導引至聚光器52的聚光透鏡521。是故,藉由令從檢流計式掃描器91的實線所示位置至虛線所示位置之位移速度和夾盤平台36的往圖2中左方之移動速度同步,便能在夾盤平台36的往圖2中左方加工饋送之狀態下連續照射脈衝雷射光線至圖2所示實施形態中實線及虛線所示照射位置。 Returning to FIG. 2 to continue the description, the optical path deflection means 9 is constituted by a galvano scanner 91 in this embodiment. The galvanometer scanner 91 is shifted from the position shown by the solid line to the position shown by the dotted line, thereby directing the pulsed laser light from the position shown by the solid line in the X-axis direction to the position shown by the dotted line to guide the condenser. 52's condenser lens 521. Therefore, by synchronizing the displacement speed from the position shown by the solid line to the position shown by the dotted line of the galvanometer scanner 91 and the moving speed of the chuck platform 36 to the left in FIG. In the state where the platform 36 is processed and fed to the left in FIG. 2, pulse laser light is continuously irradiated to the irradiation positions shown by the solid line and the broken line in the embodiment shown in FIG. 2.

本實施形態中的雷射加工裝置1,具備圖8所示之控制手段10。控制手段10係由電腦所構成,具備:遵照控制程式做演算處理之中央處理裝置(CPU)101;及存儲控制程式等之唯讀記憶體(ROM)102;及存儲演算結果等之可讀寫的隨機存取記憶體(RAM)103;以及輸入介面104及輸出介面105。對於控制手段10的輸入介面104,會輸入來自上述X軸方向位置檢測手段374、 Y軸方向位置檢測手段384、拍攝手段50等的檢測訊號。又,從控制手段10的輸出介面105,會輸出控制訊號至上述X軸方向移動手段37、Y軸方向移動手段38、雷射光線照射手段5的脈衝雷射光線振盪手段51、設定構成脈衝分散手段6的Y座標分散手段7之第1輔共振掃描器71的頻率之頻率設定器712、設定第2輔共振掃描器72的頻率之頻率設定器722、設定主共振掃描器73的頻率之頻率設定器732、設定構成脈衝分散手段6的X座標分散手段8之第1輔共振掃描器81的頻率之頻率設定器812、設定第2輔共振掃描器82的頻率之頻率設定器822、設定主共振掃描器83的頻率之頻率設定器832、作為光路偏向手段9之檢流計式掃描器91等。 The laser processing apparatus 1 in this embodiment includes a control means 10 shown in FIG. 8. The control means 10 is composed of a computer, and includes: a central processing device (CPU) 101 that performs calculation processing according to a control program; and a read-only memory (ROM) 102 that stores control programs and the like; and a readable and writable memory that stores calculation results and the like A random access memory (RAM) 103; and an input interface 104 and an output interface 105. For the input interface 104 of the control means 10, the input from the X-axis position detection means 374, Detection signals of the Y-axis direction position detection means 384, the imaging means 50, and the like. In addition, from the output interface 105 of the control means 10, a control signal is output to the X-axis direction moving means 37, the Y-axis direction moving means 38, the pulse laser light oscillating means 51 of the laser light irradiating means 5, and the settings constitute the pulse dispersion The Y-coordinate dispersion means of means 6 means 712 of the frequency of the first auxiliary resonance scanner 71, the frequency setter 722 of the frequency of the second auxiliary resonance scanner 72, and the frequency of the frequency of the main resonance scanner 73 Setter 732, frequency setter 812 that sets the frequency of the first auxiliary resonance scanner 81 of the X-coordinate dispersion means 8 constituting the pulse dispersion means 6, frequency setter 822 that sets the frequency of the second auxiliary resonance scanner 82, and sets the main A frequency setter 832 of the frequency of the resonance scanner 83, a galvanometer scanner 91 as the optical path deflection means 9, and the like.

本實施形態中的雷射加工裝置1係如以上般構成,以下說明其作用。圖9中揭示藉由上述雷射加工裝置1而受到加工之作為被加工物的半導體晶圓20的立體圖。圖9所示之半導體晶圓20,由矽晶圓所構成,在表面20a以格子狀形成有複數個分割預定線201,且在被該複數個分割預定線201區隔而成的複數個區域形成有IC、LSI等裝置202。該各裝置202全部為同一構成。在裝置202的表面分別形成有4個銲墊203。該4個銲墊203,於本實施形態中係由銅所形成。在和該4個銲墊203相對應之位置,分別形成從背面20b到達至銲墊203之導通孔。 The laser processing apparatus 1 in this embodiment is configured as described above, and its operation will be described below. FIG. 9 shows a perspective view of a semiconductor wafer 20 as an object to be processed by the laser processing apparatus 1. The semiconductor wafer 20 shown in FIG. 9 is composed of a silicon wafer. A plurality of planned division lines 201 are formed in a grid pattern on the surface 20a, and a plurality of regions are separated by the plurality of planned division lines 201. A device 202 such as an IC or an LSI is formed. Each of these devices 202 has the same configuration. Four pads 203 are formed on the surface of the device 202, respectively. The four pads 203 are formed of copper in this embodiment. At the positions corresponding to the four pads 203, via holes are formed from the back surface 20b to the pads 203, respectively.

各裝置202中的4個銲墊203的座標,其設計值資料 存儲於上述隨機存取記憶體(RAM)103。另,本實施形態中由上述Y座標分散手段7及X座標分散手段8所構成之脈衝分散手段6,係和裝置202中的4個銲墊203的座標相對應而設定射出之4個(I II III IV)脈衝雷射光線的XY座標。 Coordinates of the four pads 203 in each device 202, and their design value data It is stored in the random access memory (RAM) 103 described above. In addition, in this embodiment, the pulse dispersing means 6 composed of the Y-coordinate dispersing means 7 and the X-coordinate dispersing means 8 is set to correspond to the coordinates of the four pads 203 in the device 202, and four (I II III IV) XY coordinates of the pulsed laser light.

為了在和上述半導體晶圓20的4個銲墊203相對應之位置形成從背面20b到達至各個銲墊之貫通孔,如圖10所示,會將半導體晶圓20的表面20a貼附在黏著膠帶T的表面,該黏著膠帶T係外周部被裝配以便覆蓋環狀的框架F的內側開口部。另,黏著膠帶T,於本實施形態中係由聚氯乙烯(PVC)薄片所形成。 In order to form through-holes from the back surface 20b to the respective pads at positions corresponding to the four pads 203 of the semiconductor wafer 20, as shown in FIG. 10, the surface 20a of the semiconductor wafer 20 is attached to the adhesive On the surface of the adhesive tape T, an outer peripheral portion of the adhesive tape T is assembled so as to cover an inner opening portion of the ring-shaped frame F. The adhesive tape T is formed of a polyvinyl chloride (PVC) sheet in this embodiment.

實施了上述被加工物支撐工程,便如圖1所示在雷射加工裝置1的夾盤平台36上載置半導體晶圓20的黏著膠帶T側。然後,啟動未圖示之吸附手段,藉此將半導體晶圓20透過黏著膠帶T吸附保持於夾盤平台36上(被加工物保持工程)。是故,透過黏著膠帶T被保持於夾盤平台36之半導體晶圓20,其背面20b成為上側。另,透過黏著膠帶T支撐著半導體晶圓20之環狀的框架F,係藉由配設於夾盤平台36之夾鉗362而被固定。 After implementing the above-mentioned object supporting project, as shown in FIG. 1, the adhesive tape T side of the semiconductor wafer 20 is placed on the chuck platform 36 of the laser processing apparatus 1. Then, a suction means (not shown) is activated, whereby the semiconductor wafer 20 is sucked and held on the chuck table 36 through the adhesive tape T (the object holding process). For this reason, the semiconductor wafer 20 held on the chuck table 36 through the adhesive tape T has its back surface 20b on the upper side. The ring-shaped frame F supporting the semiconductor wafer 20 via the adhesive tape T is fixed by a clamp 362 arranged on the chuck platform 36.

實施了上述被加工物保持工程,則啟動X軸方向移動手段37將吸附保持著半導體晶圓20之夾盤平台36定位至拍攝手段50的正下方。一旦夾盤平台36被定位至拍攝手段50的正下方,藉由拍攝手段50及控制手段10執行校準作業,以檢測半導體晶圓20的應做雷射加工 的加工區域。亦即,拍攝手段50及控制手段10,執行圖樣比對(pattern matching)等圖像處理以用來與沿著形成於半導體晶圓20的第1方向的分割預定線201照射雷射光線之雷射光線照射手段5的聚光器52進行對位,來完成雷射光線照射位置之校準。此時,形成有半導體晶圓20的分割預定線201之表面20a雖位於下側,但拍攝手段50如上述般是具備由紅外線照明手段及捕捉紅外線之光學系統以及輸出和紅外線相對應的電子訊號之拍攝元件(紅外線CCD)等所構成之拍攝手段,故能夠從背面20b穿透而拍攝分割預定線201。 After the above-mentioned object holding process is performed, the X-axis direction moving means 37 is activated to position the chuck stage 36 holding and holding the semiconductor wafer 20 directly below the imaging means 50. Once the chuck platform 36 is positioned directly below the photographing means 50, a calibration operation is performed by the photographing means 50 and the control means 10 to detect that the semiconductor wafer 20 should be laser processed. Processing area. That is, the photographing means 50 and the control means 10 perform image processing such as pattern matching to irradiate the laser beam with a laser beam along a predetermined division line 201 formed in the first direction of the semiconductor wafer 20. The concentrator 52 of the laser light irradiation means 5 performs alignment to complete the calibration of the laser light irradiation position. At this time, although the surface 20a of the planned division line 201 of the semiconductor wafer 20 is located on the lower side, as described above, the imaging means 50 is provided with an infrared illumination means and an optical system that captures infrared rays, and outputs an electronic signal corresponding to the infrared rays. The imaging means including an imaging element (infrared CCD) can penetrate the back surface 20b to image the division line 201.

像以上這樣,檢測形成於被保持在夾盤平台36上的半導體晶圓20之分割預定線,並進行了雷射光線照射位置之校準,便如圖11所示,將夾盤平台36移動至雷射光線照射手段5的聚光器52所位處之雷射光線照射區域,將規定的分割預定線201與分割預定線201之間的裝置202的中間位置定位至聚光器52的正下方。然後,將從聚光器52照射之脈衝雷射光線的聚光點定位至半導體晶圓20的背面(上面)附近。啟動雷射光線照射手段5的脈衝雷射光線振盪手段51及脈衝分散手段6以及作為光路偏向手段9之檢流計式掃描器91,同時啟動X軸方向移動手段37令夾盤平台36朝圖11中箭頭X1所示方向以規定的移動速度移動。 As described above, the predetermined division line of the semiconductor wafer 20 formed on the chuck table 36 is detected, and the laser light irradiation position is calibrated. As shown in FIG. 11, the chuck table 36 is moved to The laser light irradiation area where the condenser 52 of the laser light irradiation means 5 is located locates the intermediate position of the device 202 between the predetermined division line 201 and the predetermined division line 201 directly below the condenser 52 . Then, the light-condensing point of the pulsed laser light radiated from the condenser 52 is positioned near the back surface (upper surface) of the semiconductor wafer 20. The pulsed laser light oscillating means 51 and the pulse dispersing means 6 of the laser light irradiation means 5 and the galvanometer scanner 91 as the optical path deflection means 9 are activated, and the X-axis direction moving means 37 is activated so that the chuck platform 36 faces The direction indicated by arrow X1 in 11 moves at a predetermined moving speed.

從由Y座標分散手段7及X座標分散手段8所構成之脈衝分散手段6射出之4個(I II III IV)脈衝雷射光線 的XY座標,係設定成和形成於半導體晶圓20之裝置202中的4個銲墊203的座標相對應,故從脈衝雷射光線振盪手段51振盪出的脈衝雷射光線會照射至與4個銲墊203相對應之位置。然後,在夾盤平台36移動規定量的期間,檢流計式掃描器91如上述般動作,藉此會以規定脈衝數照射脈衝雷射光線至分別與4個銲墊203相對應之位置,而在半導體晶圓20形成到達至4個銲墊203之貫通孔。如此,便在和形成於X軸方向的同列的所有裝置202上設置之4個銲墊203相對應之位置,實施形成貫通孔之雷射加工工程。在和形成於半導體晶圓20的所有裝置202上設置之4個銲墊203相對應之位置,實施該雷射加工工程。 Four (I II III IV) pulsed laser rays emitted from the pulse dispersion means 6 composed of the Y-coordinate dispersion means 7 and the X-coordinate dispersion means 8. The XY coordinates are set to correspond to the coordinates of the four pads 203 formed in the device 202 of the semiconductor wafer 20, so the pulsed laser light oscillated from the pulsed laser light oscillating means 51 will be irradiated to 4 Corresponding positions of the solder pads 203. Then, while the chuck platform 36 moves a predetermined amount, the galvanometer scanner 91 operates as described above, thereby irradiating the pulsed laser light with a predetermined number of pulses to positions corresponding to the four pads 203, respectively. On the semiconductor wafer 20, through-holes are formed which reach four pads 203. In this way, a laser processing process for forming a through hole is performed at a position corresponding to the four pads 203 provided on all the devices 202 formed in the same row in the X-axis direction. This laser processing process is performed at positions corresponding to the four pads 203 provided on all the devices 202 formed on the semiconductor wafer 20.

上述雷射加工工程,係以以下加工條件進行。 The above laser processing process is performed under the following processing conditions.

光源:YVO4脈衝雷射或YAG脈衝雷射 Light source: YVO4 pulse laser or YAG pulse laser

波長:355nm Wavelength: 355nm

反覆頻率:40kHz Repeated frequency: 40kHz

平均輸出:4W Average output: 4W

聚光點徑:Φ10μm Condensing spot diameter: Φ10μm

加工饋送速度:100mm/秒 Processing feed speed: 100mm / s

第1輔共振掃描器的反覆頻率:30kHz Repeated frequency of the first auxiliary resonance scanner: 30kHz

第2輔共振掃描器的反覆頻率:20kHz Repeated frequency of the second auxiliary resonance scanner: 20kHz

主共振掃描器的反覆頻率:10kHz Repeated frequency of the main resonance scanner: 10kHz

如以上般,上述實施形態中的雷射加工裝置1 中,當在和形成於半導體晶圓20的裝置202上設置之複數個銲墊203的座標相對應之X座標、Y座標位置形成貫通孔時,能夠以不使其產生裂痕的最大反覆頻率(10kHz)對複數個座標同時照射脈衝雷射光線,生產性會提升。 As described above, the laser processing apparatus 1 in the above embodiment When a through hole is formed in the X coordinate and Y coordinate position corresponding to the coordinates of a plurality of pads 203 provided on the device 202 formed on the semiconductor wafer 20, the maximum repetition frequency can be achieved without causing cracks ( 10kHz) Simultaneously irradiate pulse laser light to a plurality of coordinates, the productivity will be improved.

Claims (1)

一種雷射加工裝置,其特徵為,具備:夾盤平台,將被加工物保持於XY平面;及雷射光線照射手段,對被保持於該夾盤平台之被加工物照射雷射光線;該雷射光線照射手段,包含:脈衝雷射光線振盪手段,以反覆頻率M振盪脈衝雷射光線;及聚光器,將藉由該脈衝雷射光線振盪手段振盪出的脈衝雷射光線予以聚光並照射至被保持於該夾盤平台之被加工物;及脈衝分散手段,配設於該脈衝雷射光線振盪手段與該聚光器之間,將脈衝雷射光線分散至複數個X座標及複數個Y座標;該脈衝分散手段具備:掃描器,其具有將以該反覆頻率M振盪的脈衝雷射光線予以反射之鏡,以比該反覆頻率M還低的反覆頻率M1搖動而將脈衝雷射光線分散至(M/M1)個座標、與將脈衝雷射光線分散至複數個Y座標之Y座標分散手段及分散至複數個X座標之X座標分散手段,該Y座標分散手段,包含以該反覆頻率M1搖動之第1主掃描器、及以該反覆頻率M1的整數倍的反覆頻率搖動而將脈衝雷射光線分散之第1輔掃描器,令該第1主掃描器與該第1輔掃描器的反覆頻率的相位錯開,以辨明受到脈衝雷射光線照射之Y座標,該X座標分散手段,包含以該反覆頻率M1搖動之第2主掃描器、及以該反覆頻率M1的整數倍的反覆頻率搖動而將脈衝雷射光線分散之第2輔掃描器,令該第2主掃描器與該第2輔掃描器的反覆頻率的相位錯開,以辨明受到脈衝雷射光線照射之X座標。A laser processing device, comprising: a chuck platform that holds a workpiece on an XY plane; and a laser light irradiation means for irradiating laser light on a workpiece that is held on the chuck platform; The laser light irradiation means includes a pulse laser light oscillation means to oscillate the pulse laser light at an iterative frequency M; and a condenser to condense the pulsed laser light oscillated by the pulse laser light oscillation means. And irradiate the workpiece to be held on the chuck platform; and a pulse dispersing means arranged between the pulse laser ray oscillating means and the condenser to disperse the pulse laser ray to a plurality of X coordinates and A plurality of Y-coordinates; the pulse dispersing means is provided with a scanner having a mirror for reflecting the pulsed laser light oscillating at the repeated frequency M, and shaking the pulsed laser at a repeated frequency M1 lower than the repeated frequency M The scattered light rays are distributed to (M / M1) coordinates, the Y coordinate dispersion method to disperse the pulsed laser light rays to the plurality of Y coordinates, and the X coordinate dispersion method to disperse the plurality of X coordinates. The first main scanner is shaken with the repeated frequency M1, and the first auxiliary scanner is shaken at the repeated frequency of the multiple of the repeated frequency M1 to disperse the pulsed laser light, so that the first main scanner and the The phase of the iterative frequency of the first auxiliary scanner is staggered to identify the Y-coordinate illuminated by the pulsed laser light. The X-coordinate dispersion means includes a second main scanner that is shaken at the iterative frequency M1 and the iterative frequency M1. The second sub-scanner that shakes the pulse laser light at an integral multiple of the repeated frequency, disperses the phase of the repeated frequencies of the second main scanner and the second sub-scanner to identify that it is illuminated by the pulsed laser light X coordinate.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1357428A (en) * 2000-11-13 2002-07-10 住友重机械工业株式会社 Machinine planting method and equipment and machining data forming method and equipment
CN1441467A (en) * 2001-11-09 2003-09-10 株式会社半导体能源研究所 Laser radiator, laser radiation method and method for producing semiconductor device
US20080053971A1 (en) * 2006-09-06 2008-03-06 Disco Corporation Via hole machining method
JP2009125777A (en) * 2007-11-26 2009-06-11 Hitachi Via Mechanics Ltd Laser beam machining apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4562577B2 (en) 2005-03-31 2010-10-13 信越半導体株式会社 Laser marking device and laser marking method
JP4846282B2 (en) 2005-06-29 2011-12-28 ミヤチテクノス株式会社 Electronic component package sealing method and apparatus
JP2008212999A (en) * 2007-03-06 2008-09-18 Disco Abrasive Syst Ltd Laser beam machining apparatus
JP2012091218A (en) * 2010-10-28 2012-05-17 Disco Corp Laser-machining apparatus
US8557683B2 (en) * 2011-06-15 2013-10-15 Applied Materials, Inc. Multi-step and asymmetrically shaped laser beam scribing
US20120322235A1 (en) * 2011-06-15 2012-12-20 Wei-Sheng Lei Wafer dicing using hybrid galvanic laser scribing process with plasma etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1357428A (en) * 2000-11-13 2002-07-10 住友重机械工业株式会社 Machinine planting method and equipment and machining data forming method and equipment
CN1441467A (en) * 2001-11-09 2003-09-10 株式会社半导体能源研究所 Laser radiator, laser radiation method and method for producing semiconductor device
US20080053971A1 (en) * 2006-09-06 2008-03-06 Disco Corporation Via hole machining method
JP2009125777A (en) * 2007-11-26 2009-06-11 Hitachi Via Mechanics Ltd Laser beam machining apparatus

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