TWI643890B - Resin sheet for hollow sealing and manufacturing method of hollow package - Google Patents
Resin sheet for hollow sealing and manufacturing method of hollow package Download PDFInfo
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- TWI643890B TWI643890B TW103111254A TW103111254A TWI643890B TW I643890 B TWI643890 B TW I643890B TW 103111254 A TW103111254 A TW 103111254A TW 103111254 A TW103111254 A TW 103111254A TW I643890 B TWI643890 B TW I643890B
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- Taiwan
- Prior art keywords
- hollow
- resin
- volume
- resin sheet
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- Prior art date
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- 229920005989 resin Polymers 0.000 title claims abstract description 109
- 239000011347 resin Substances 0.000 title claims abstract description 109
- 238000007789 sealing Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 37
- 239000011256 inorganic filler Substances 0.000 claims abstract description 31
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 31
- 238000009826 distribution Methods 0.000 claims abstract description 15
- 238000000790 scattering method Methods 0.000 claims abstract description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 22
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 8
- 229920005992 thermoplastic resin Polymers 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 5
- 239000011800 void material Substances 0.000 abstract description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 31
- 239000003822 epoxy resin Substances 0.000 description 29
- 229920000647 polyepoxide Polymers 0.000 description 29
- 235000012431 wafers Nutrition 0.000 description 25
- 239000000758 substrate Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 15
- 125000003545 alkoxy group Chemical group 0.000 description 13
- 239000005011 phenolic resin Substances 0.000 description 12
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 8
- 238000004898 kneading Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 8
- 239000002966 varnish Substances 0.000 description 8
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 7
- 239000003063 flame retardant Substances 0.000 description 7
- -1 polyethylene terephthalate Polymers 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 235000010290 biphenyl Nutrition 0.000 description 5
- 239000004305 biphenyl Substances 0.000 description 5
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- UHKPXKGJFOKCGG-UHFFFAOYSA-N 2-methylprop-1-ene;styrene Chemical compound CC(C)=C.C=CC1=CC=CC=C1.C=CC1=CC=CC=C1 UHKPXKGJFOKCGG-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 3
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 125000006606 n-butoxy group Chemical group 0.000 description 3
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229920006132 styrene block copolymer Polymers 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000013034 phenoxy resin Substances 0.000 description 2
- 229920006287 phenoxy resin Polymers 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NXJCAQMXIHGNKS-UHFFFAOYSA-N [2-benzyl-4-(hydroxymethyl)-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1CC1=CC=CC=C1 NXJCAQMXIHGNKS-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N benzene Substances C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920006228 ethylene acrylate copolymer Polymers 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 235000014413 iron hydroxide Nutrition 0.000 description 1
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UOKZUTXLHRTLFH-UHFFFAOYSA-N o-phenylhydroxylamine Chemical compound NOC1=CC=CC=C1 UOKZUTXLHRTLFH-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
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- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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Abstract
提供即使中空構造之空隙的寬為100μm左右,亦可維持中空構造,且防止封裝翹曲可製作信賴性高的中空封裝之中空密封用樹脂薄片及中空封裝之製造方法。本發明的中空密封用樹脂薄片,無機充填劑以70體積%以上90體積%以下的含量含有,且以前述無機充填劑之全量為100體積%時,前述無機充填劑以雷射繞射散射法所測定的粒度分佈滿足下列條件。 When the width of the void of the hollow structure is about 100 μm, the hollow structure can be maintained, and the resin sheet for hollow sealing and the method of manufacturing the hollow package can be manufactured in a hollow package with high reliability. In the resin sheet for hollow sealing of the present invention, the inorganic filler is contained in an amount of 70% by volume or more and 90% by volume or less, and when the total amount of the inorganic filler is 100% by volume, the inorganic filler is subjected to laser diffraction scattering method. The measured particle size distribution satisfies the following conditions.
超過100μm:1體積%以下 More than 100 μm: 1% by volume or less
10μm以下:30體積%以上70體積%以下 10 μm or less: 30% by volume or more and 70% by volume or less
1μm以下:10體積%以上 1 μm or less: 10% by volume or more
Description
本發明係關於中空密封用樹脂薄片及中空封裝之製造方法。 The present invention relates to a resin sheet for hollow sealing and a method for producing a hollow package.
電子裝置封裝之製作,代表地為透過凸塊等將被固定於基板等的1或複數的電子裝置以密封樹脂密封,因應必要採用切割之過程使密封體成為電子裝置單位的封裝。作為如此之密封樹脂,可使用薄片狀的密封樹脂。 The electronic device package is produced by sealing a resin or a plurality of electronic devices that are fixed to a substrate or the like through a bump or the like, and the sealing body is required to be a package of the electronic device. As such a sealing resin, a sheet-shaped sealing resin can be used.
近年伴隨半導體封裝,SAW(Surface Acoustic Wave)過濾器、或CMOS(Complementary Metal Oxide Semiconductor)感測器、加速度感測器等稱作MEMS之微小電子裝置之開發持續進展。將此等之電子裝置密封的封裝,各自具有用以確保一般表面彈性波之傳播、光學系的維持、電子裝置的可動構件的可動性之中空構造。該中空構造多設置為基板與元件間的空隙。密封時,為了確保可動構件的運作信賴性或元件的接續信賴性需要維持中空構造且密封。例如,專利文獻1記載使用凝膠狀的硬化性樹 脂薄片將機能元件進行中空鑄型之技術。 In recent years, the development of microelectronic devices called MEMS, such as a semiconductor package, a SAW (Surface Acoustic Wave) filter, or a CMOS (Complementary Metal Oxide Semiconductor) sensor, an acceleration sensor, and the like, has continued to progress. Each of the packages in which the electronic devices are sealed has a hollow structure for ensuring propagation of a general surface elastic wave, maintenance of an optical system, and movability of a movable member of the electronic device. The hollow structure is often provided as a gap between the substrate and the element. At the time of sealing, it is necessary to maintain a hollow structure and seal in order to ensure the operational reliability of the movable member or the connection reliability of the element. For example, Patent Document 1 describes the use of a gel-like hardenable tree. The fat sheet is a technique in which a functional element is subjected to a hollow mold.
[專利文獻1]日本特開2006-19714號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2006-19714
有鑑於上述賦予中空構造的凸塊,其尺寸愈小花費愈高、或上述可動構件的複雜化或複合化用的中空構造之擴大的要求,預想今後可採用使凸塊直徑增加而將空隙擴大之對策。在上述專利文獻1記載之技術,作為元件與基板間的中空構造,寬若至數十μm左右之空隙則可邊維持期望的中空構造邊將電子裝置密封。但是,作為中空構造,邊確保寬接近100μm的空隙邊進行密封,則有產生樹脂流入中空構造等而對應變困難、封裝製作的良率降低之場合。 In view of the above-described requirements for imparting a hollow structure, the smaller the size, the higher the cost, or the expansion of the movable member or the expansion of the hollow structure for the composite, it is expected that the diameter of the bump can be increased to expand the gap in the future. Countermeasures. In the technique described in Patent Document 1, as the hollow structure between the element and the substrate, the electronic device can be sealed while maintaining a desired hollow structure with a gap of about several tens of μm. However, when the sealing is performed while securing a gap having a width of approximately 100 μm as the hollow structure, there is a case where the resin flows into the hollow structure and the like, and the yield becomes difficult, and the yield of the package is lowered.
本發明的目的在於提供即使中空構造之空隙的寬為100μm左右亦可以高良率製作中空封裝的中空密封用樹脂薄片及中空封裝之製造方法。 An object of the present invention is to provide a method for producing a hollow sealing resin sheet and a hollow package in which a hollow package can be produced at a high yield even when the width of the void of the hollow structure is about 100 μm.
本發明者們努力研究結果,發現藉由採用下 述構成,可解決上述課題,完成本發明。 The inventors worked hard to study the results and found that by using The above configuration can solve the above problems and complete the present invention.
亦即,本發明為以70體積%以上90體積%以下的含量含有無機充填劑,以前述無機充填劑的全量作為100體積%時的前述無機充填劑的以雷射繞射散射法所測定的粒度分佈滿足以下的中空密封用樹脂薄片。 That is, in the present invention, the inorganic filler is contained in an amount of 70% by volume or more and 90% by volume or less, and the inorganic filler is measured by a laser diffraction scattering method when the total amount of the inorganic filler is 100% by volume. The particle size distribution satisfies the following resin sheet for hollow sealing.
超過100μm:1體積%以下 More than 100 μm: 1% by volume or less
10μm以下:30體積%以上70體積%以下 10 μm or less: 30% by volume or more and 70% by volume or less
1μm以下:10體積%以上 1 μm or less: 10% by volume or more
該中空密封用樹脂薄片,因以高含量含有具有指定的粒度分佈的無機充填劑,對中空構造附近的樹脂賦予約束流動之作用(脹容樣作用),可有效防止樹脂進入中空構造。結果,即使空隙的寬為100μm左右仍可一邊維持中空構造一邊以高良率製作中空封裝。又,無機充填劑的含量及粒度分佈的測定方法係依據實施例的記載。 The resin sheet for hollow sealing contains an inorganic filler having a predetermined particle size distribution at a high content, and imparts a restricting flow effect (expansion-like action) to the resin in the vicinity of the hollow structure, thereby effectively preventing the resin from entering the hollow structure. As a result, even if the width of the void is about 100 μm, the hollow package can be produced at a high yield while maintaining the hollow structure. Further, the method of measuring the content and particle size distribution of the inorganic filler is based on the description of the examples.
該中空密封用樹脂薄片的硬化前的80℃中動的黏度以5000Pa.s以上20000Pa.s以下為佳。藉由此,可使中空構造之確保與在中空構造以外的部分的凹凸追隨性兼具。又,動的黏度的測定方法係依據實施例的記載。 The viscosity of the resin sheet for hollow sealing at 80 ° C before curing is 5000 Pa. s above 20000Pa. The following is better. Thereby, the hollow structure can be secured with the unevenness of the portion other than the hollow structure. Further, the method for measuring the dynamic viscosity is based on the description of the examples.
在該中空密封用樹脂薄片,前述無機充填劑以二氧化矽粒子、氧化鋁粒子或此等之混合物為佳。藉由此,可使硬化後的線膨脹係數降低,得到信賴性高的封裝。 In the resin sheet for hollow sealing, the inorganic filler is preferably cerium oxide particles, alumina particles or a mixture thereof. Thereby, the linear expansion coefficient after hardening can be reduced, and a highly reliable package can be obtained.
在本發明,亦包含以包覆配置於被附著體上 的1或複數的電子裝置之方式使該中空密封用樹脂薄片一邊維持前述被附著體與前述電子裝置間的中空部一邊層合於前述電子裝置上的層合步驟、及使前述中空密封用樹脂薄片硬化形成密封體的密封體形成步驟的中空封裝之製造方法。 In the present invention, the package is also disposed on the attached body The lamination step of laminating the resin sheet for hollow sealing while maintaining the hollow portion between the adherend and the electronic device while laminating the electronic device, and the resin for hollow sealing A method of manufacturing a hollow package in which a sheet is hardened to form a sealed body forming step of a sealing body.
11‧‧‧中空密封用樹脂薄片 11‧‧‧Seal sheet for hollow sealing
11a‧‧‧支持體 11a‧‧‧Support
13‧‧‧SAW晶片 13‧‧‧SAW chip
15‧‧‧密封體 15‧‧‧ Sealing body
18‧‧‧中空封裝 18‧‧‧ hollow package
[圖1]本發明的一實施形態之樹脂薄片模式表示之斷面圖。 Fig. 1 is a cross-sectional view showing a resin sheet mode according to an embodiment of the present invention.
[圖2A]本發明的一實施形態之電子裝置封裝製造方法的一步驟模式表示之圖。 Fig. 2A is a view showing a step mode of a method of manufacturing an electronic device package according to an embodiment of the present invention.
[圖2B]本發明的一實施形態之電子裝置封裝製造方法的一步驟模式表示之圖。 Fig. 2B is a view showing a step mode of a method of manufacturing an electronic device package according to an embodiment of the present invention.
[圖2C]本發明的一實施形態之電子裝置封裝製造方法的一步驟模式表示之圖。 Fig. 2C is a view showing a step mode of a method of manufacturing an electronic device package according to an embodiment of the present invention.
以下舉實施形態將本發明詳細說明,但本發明不僅限於此等之實施形態。 The present invention will be described in detail below with reference to the embodiments, but the invention is not limited to the embodiments.
圖1為本發明的一實施形態之中空密封用樹脂薄片(以下、亦僅稱「樹脂薄片」。)11模式表示之斷面圖。樹脂薄片11,代表地以層合於聚乙烯對苯二甲酸酯(PET)薄膜等的支持體11a上的狀態被提供。又,支持體11a上,為使樹脂薄片11之剝離容易地進行可施以脫膜處理。 Fig. 1 is a cross-sectional view showing a resin sheet for hollow sealing according to an embodiment of the present invention (hereinafter, simply referred to as "resin sheet"). The resin sheet 11 is typically provided in a state of being laminated on a support 11a such as a polyethylene terephthalate (PET) film. Moreover, the support 11a can be subjected to a release treatment in order to facilitate the peeling of the resin sheet 11.
樹脂薄片11以含有環氧樹脂、及酚樹脂為佳。藉由此可得到良好的熱硬化性。 The resin sheet 11 is preferably an epoxy resin or a phenol resin. Thereby, good thermosetting properties can be obtained.
環氧樹脂方面,並不特別限定。例如,可使用三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯基型環氧樹脂、改性雙酚A型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、改性雙酚F型環氧樹脂、二環戊二烯型環氧樹脂、酚酚醛清漆型環氧樹脂、苯氧基樹脂等的各種的環氧樹脂。此等環氧樹脂可單獨使用或2種以上併用。 The epoxy resin is not particularly limited. For example, a triphenylmethane type epoxy resin, a cresol novolak type epoxy resin, a biphenyl type epoxy resin, a modified bisphenol A type epoxy resin, a bisphenol A type epoxy resin, a bisphenol can be used. Various epoxy resins such as F-type epoxy resin, modified bisphenol F-type epoxy resin, dicyclopentadiene type epoxy resin, phenol novolac type epoxy resin, and phenoxy resin. These epoxy resins may be used singly or in combination of two or more.
由確保環氧樹脂的硬化後的韌性及環氧樹脂的反應性觀點,以環氧當量150~250、軟化點或者融點在50~130℃之常溫下為固形者為佳,其中,由信賴性的觀點,以三苯基甲烷型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯基型環氧樹脂更佳。 From the viewpoint of ensuring the toughness after curing of the epoxy resin and the reactivity of the epoxy resin, it is preferable to use a solid equivalent of an epoxy equivalent of 150 to 250, a softening point, or a melting point of 50 to 130 ° C. From the viewpoint of preference, a triphenylmethane type epoxy resin, a cresol novolak type epoxy resin, and a biphenyl type epoxy resin are more preferable.
酚樹脂為在與環氧樹脂間產生硬化反應者則無特別限定。例如,可使用酚酚醛清漆樹脂、酚芳烷基樹脂、聯苯基芳烷基樹脂、二環戊二烯型酚樹脂、甲酚酚醛清漆樹脂、可溶酚醛樹脂等。此等酚樹脂可單獨使用或2 種以上併用。 The phenol resin is not particularly limited as long as it causes a hardening reaction with the epoxy resin. For example, a phenol novolak resin, a phenol aralkyl resin, a biphenyl aralkyl resin, a dicyclopentadiene type phenol resin, a cresol novolak resin, a resol resin, or the like can be used. These phenolic resins can be used alone or 2 More than one kind.
酚樹脂方面,由與環氧樹脂反應性的觀點,以使用羥基當量為70~250、軟化點為50~110℃者為佳,其中,由硬化反應性高觀點,宜使用酚酚醛清漆樹脂。又,由信賴性的觀點,酚芳烷基樹脂或聯苯基芳烷基樹脂般低吸濕性者亦宜使用。 In the case of the phenol resin, from the viewpoint of reactivity with the epoxy resin, it is preferred to use a hydroxyl group equivalent of 70 to 250 and a softening point of 50 to 110 ° C. Among them, a phenol novolak resin is preferably used from the viewpoint of high curing reactivity. Further, from the viewpoint of reliability, those having low hygroscopicity like a phenol aralkyl resin or a biphenyl aralkyl resin are also preferably used.
環氧樹脂與酚樹脂的搭配比例,由硬化反應性觀點,相對環氧樹脂中之環氧基1當量,以酚樹脂中之羥基的合計成為0.7~1.5當量之方式來摻合為佳、更較佳為成為0.9~1.2當量。 The ratio of the epoxy resin to the phenol resin is preferably from 1 to 1.5 equivalents based on the epoxy group in the epoxy resin, and the total amount of the hydroxyl groups in the phenol resin is 0.7 to 1.5 equivalents. It is preferably 0.9 to 1.2 equivalents.
樹脂薄片11中之環氧樹脂及酚樹脂的合計含量的下限以2.0重量%以上為佳、3.0重量%以上更佳。在2.0重量%以上,則可得到良好的對電子裝置、基板等之接著力。另一方面,上述合計含量的上限以20重量%以下為佳、10重量%以下更佳。在20重量%以下,則可使樹脂薄片的吸濕性降低。 The lower limit of the total content of the epoxy resin and the phenol resin in the resin sheet 11 is preferably 2.0% by weight or more, more preferably 3.0% by weight or more. When it is 2.0% by weight or more, a good adhesion to an electronic device, a substrate, or the like can be obtained. On the other hand, the upper limit of the total content is preferably 20% by weight or less, more preferably 10% by weight or less. When it is 20% by weight or less, the hygroscopicity of the resin sheet can be lowered.
樹脂薄片11,以含熱可塑性樹脂為佳。藉由此,可使得到的中空密封用樹脂薄片的耐熱性、可撓性、強度提高。 The resin sheet 11 is preferably a thermoplastic resin. Thereby, the heat resistance, flexibility, and strength of the obtained resin sheet for hollow sealing can be improved.
熱可塑性樹脂方面,可舉例如天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯共聚合物、乙烯-丙烯酸共聚合物、乙烯-丙烯酸酯共聚合物、聚丁二烯樹脂、聚碳酸酯樹脂、熱可塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等的聚醯胺樹脂、苯氧基樹脂、丙 烯酸樹脂、PET或PBT等的飽和聚酯樹脂、聚醯胺醯亞胺樹脂、氟樹脂、苯乙烯-異丁烯-苯乙烯嵌段共聚合物等。此等之熱可塑性樹脂可單獨或2種以上併用。其中,由樹脂薄片之低應力性、低吸水性觀點,以苯乙烯-異丁烯-苯乙烯嵌段共聚合物為佳。 Examples of the thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, Polybutadiene resin, polycarbonate resin, thermoplastic polyimide resin, polyamine resin such as 6-nylon or 6,6-nylon, phenoxy resin, C A olefinic resin, a saturated polyester resin such as PET or PBT, a polyamidoximine resin, a fluororesin, a styrene-isobutylene-styrene block copolymer or the like. These thermoplastic resins may be used alone or in combination of two or more. Among them, a styrene-isobutylene-styrene block copolymer is preferred from the viewpoint of low stress and low water absorption of the resin sheet.
樹脂薄片11中之熱可塑性樹脂的含量以1.0重量%以上為佳、1.5重量%以上更佳。在1.0重量%以上,則可賦予樹脂薄片柔軟性、可撓性。樹脂薄片11中之熱可塑性樹脂的含量以3.5重量%以下為佳、3.0重量%以下更佳。在3.5重量%以下,則可使對電子裝置或基板之樹脂薄片的接著性提升。 The content of the thermoplastic resin in the resin sheet 11 is preferably 1.0% by weight or more, more preferably 1.5% by weight or more. When it is 1.0% by weight or more, the resin sheet can be imparted with flexibility and flexibility. The content of the thermoplastic resin in the resin sheet 11 is preferably 3.5% by weight or less, more preferably 3.0% by weight or less. When it is 3.5% by weight or less, the adhesion to the resin sheet of the electronic device or the substrate can be improved.
樹脂薄片11,以70體積%以上90體積%以下的含量含有無機質充填劑。上述含量的下限以74體積%以上為佳、78體積%以上更佳。又,上述含量的上限以85體積%以下為佳、83體積%以下更佳。無機充填劑的含量藉由在上述範圍,賦予中空構造附近的樹脂脹容樣作用,可維持中空構造,同時使硬化後的線膨脹係數降低,防止封裝翹曲,可得到高信賴性的中空封裝。又,無機充填劑為複數種的粒子的混合物的場合,該混合物的含量符合上述範圍。 The resin sheet 11 contains an inorganic filler in an amount of 70% by volume or more and 90% by volume or less. The lower limit of the above content is preferably 74% by volume or more, more preferably 78% by volume or more. Further, the upper limit of the above content is preferably 85% by volume or less, more preferably 83% by volume or less. By the content of the inorganic filler in the above range, the resin is provided with a swelling-like effect in the vicinity of the hollow structure, the hollow structure can be maintained, and the coefficient of linear expansion after hardening can be reduced to prevent warpage of the package, and a highly reliable hollow package can be obtained. . Further, when the inorganic filler is a mixture of a plurality of kinds of particles, the content of the mixture satisfies the above range.
無機質充填劑的含量亦可以「重量%」為單位說明。代表的二氧化矽的含量,以「重量%」為單位說明。 The content of the inorganic filler can also be expressed in terms of "% by weight". The content of the representative cerium oxide is described in terms of "% by weight".
二氧化矽通常比重為2.2g/cm3,故二氧化矽的含量 (重量%)之較佳範圍如下。亦即,樹脂薄片11中之二氧化矽的含量以81重量%以上為佳、84重量%以上更佳。樹脂薄片11中之二氧化矽的含量以94重量%以下為佳、91重量%以下更佳。 The cerium oxide usually has a specific gravity of 2.2 g/cm 3 , so the preferred range of the content (% by weight) of cerium oxide is as follows. That is, the content of cerium oxide in the resin sheet 11 is preferably 81% by weight or more, more preferably 84% by weight or more. The content of cerium oxide in the resin sheet 11 is preferably 94% by weight or less, more preferably 91% by weight or less.
氧化鋁通常比重為3.9g/cm3,故氧化鋁的含量(重量%)之較佳範圍如下。亦即,樹脂薄片11中之氧化鋁的含量以88重量%以上為佳、90重量%以上更佳。樹脂薄片11中之氧化鋁的含量以97重量%以下為佳、95重量%以下更佳。 The alumina generally has a specific gravity of 3.9 g/cm 3 , so the preferred range of the content (% by weight) of alumina is as follows. That is, the content of the alumina in the resin sheet 11 is preferably 88% by weight or more, more preferably 90% by weight or more. The content of the alumina in the resin sheet 11 is preferably 97% by weight or less, more preferably 95% by weight or less.
在樹脂薄片11,以前述無機充填劑的全量作為100體積%時的前述無機充填劑的以雷射繞射散射法所測定的粒度分佈滿足特定關係。具體上,該粒度分佈中,粒徑超過100μm的粒子的比率為1體積%以下,0.5體積%以下為佳、0.3體積%以下更佳。又,粒徑超過100μm的粒子的比率的下限以0.01體積%以上為佳。粒徑10μm以下的粒子的比率為30體積%以上70體積%以下,35體積%以上65體積%以下為佳、40體積%以上60體積%以下更佳。進一步,粒徑在1μm以下的粒子的比率為10體積%以上、13體積%以上為佳、15體積%以上更佳。又,粒徑在1μm以下的粒子的比率的上限以40體積%以下為佳。無機充填劑的雷射繞射散射法之粒度分佈藉由上述特定關係,對中空構造附近的樹脂賦予脹容樣作用,密封時可適當抑制樹脂進入中空構造。又,無機充填劑為複數種的粒子的混合物之場合,該混合物的粒度分佈滿足上述關 係。粒度分佈,可藉由使用由母集團任意抽出的試料,使用雷射繞射散射式粒度分佈測定裝置進行測定而導出。 In the resin sheet 11, the particle size distribution measured by the laser diffraction scattering method of the above-mentioned inorganic filler when the total amount of the inorganic filler is 100% by volume satisfies a specific relationship. Specifically, in the particle size distribution, the ratio of particles having a particle diameter of more than 100 μm is 1% by volume or less, preferably 0.5% by volume or less, more preferably 0.3% by volume or less. Further, the lower limit of the ratio of the particles having a particle diameter of more than 100 μm is preferably 0.01% by volume or more. The ratio of the particles having a particle diameter of 10 μm or less is 30% by volume or more and 70% by volume or less, preferably 35% by volume or more and 65% by volume or less, more preferably 40% by volume or more and 60% by volume or less. Further, the ratio of the particles having a particle diameter of 1 μm or less is preferably 10% by volume or more, preferably 13% by volume or more, more preferably 15% by volume or more. Further, the upper limit of the ratio of the particles having a particle diameter of 1 μm or less is preferably 40% by volume or less. The particle size distribution of the laser diffraction scattering method of the inorganic filler imparts a bulk-like effect to the resin in the vicinity of the hollow structure by the above specific relationship, and the resin can be appropriately prevented from entering the hollow structure at the time of sealing. Further, when the inorganic filler is a mixture of a plurality of kinds of particles, the particle size distribution of the mixture satisfies the above-mentioned system. The particle size distribution can be derived by using a sample arbitrarily extracted by a parent group and measuring it using a laser diffraction scattering type particle size distribution measuring apparatus.
無機質充填劑,並不特別限制,可使用以往習知的各種充填劑,例如,石英玻璃、滑石、二氧化矽(熔融二氧化矽或結晶性二氧化矽等)、氧化鋁、氮化鋁、氮化矽、氮化硼的粉末。此等可單獨使用或2種以上併用。其中,由可使線膨脹係數良好地降低之理由,以二氧化矽、氧化鋁為佳、二氧化矽更佳。 The inorganic filler is not particularly limited, and various conventional fillers such as quartz glass, talc, cerium oxide (melted cerium oxide or crystalline cerium oxide), alumina, aluminum nitride, and the like can be used. A powder of tantalum nitride or boron nitride. These may be used alone or in combination of two or more. Among them, cerium oxide and aluminum oxide are preferred, and cerium oxide is more preferable because the linear expansion coefficient can be favorably lowered.
二氧化矽方面,以二氧化矽粉末為佳、熔融二氧化矽粉末更佳。熔融二氧化矽粉末方面,可舉例如球狀熔融二氧化矽粉末、破碎熔融二氧化矽粉末,但由流動性觀點,以球狀熔融二氧化矽粉末為佳。 In terms of cerium oxide, cerium oxide powder is preferred, and molten cerium oxide powder is more preferable. The molten cerium oxide powder may, for example, be a spherical molten cerium oxide powder or a crushed molten cerium oxide powder, but it is preferable to use a spherical molten cerium oxide powder from the viewpoint of fluidity.
無機充填劑的平均粒徑,以使用50μm以下的範圍者為佳、使用0.1~30μm的範圍者較佳、使用0.5~25μm的範圍者尤佳。又,平均粒徑係依據實施例之粒度分佈測定過程,作為D50求得。 The average particle diameter of the inorganic filler is preferably in the range of 50 μm or less, preferably in the range of 0.1 to 30 μm, and particularly preferably in the range of 0.5 to 25 μm. Further, the average particle diameter was determined as D 50 according to the particle size distribution measurement procedure of the examples.
樹脂薄片11以含硬化促進劑為佳。 The resin sheet 11 is preferably a hardening accelerator.
硬化促進劑方面,為使環氧樹脂與酚樹脂的硬化進行者則不被特別限定,例如,三苯基膦、四苯基鏻四苯基硼酸酯等的有機磷系化合物;2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑等的咪唑系化合物;等。其中,由混練時溫度上昇硬化反應亦不急遽進行,可良好地製作樹脂薄片11的理由,以2-苯基-4,5-二羥基甲基咪唑為佳。 The hardening accelerator is not particularly limited in order to carry out the hardening of the epoxy resin and the phenol resin, for example, an organophosphorus compound such as triphenylphosphine or tetraphenylphosphonium tetraphenylborate; 2-benzene An imidazole compound such as benzyl-4,5-dihydroxymethylimidazole or 2-phenyl-4-methyl-5-hydroxymethylimidazole; and the like. Among them, the reason why the resin sheet 11 can be favorably produced by the temperature rise hardening reaction at the time of kneading is preferably 2-phenyl-4,5-dihydroxymethylimidazole.
硬化促進劑的含量,相對環氧樹脂及酚樹脂的合計100重量份,以0.1~5重量份為佳。 The content of the hardening accelerator is preferably 0.1 to 5 parts by weight based on 100 parts by weight of the total of the epoxy resin and the phenol resin.
樹脂薄片11以含有難燃劑成分為佳。藉由此,可降低零件短路或發熱等而起火時的燃燒擴大。難燃劑組成分方面,例如可使用氫氧化鋁、氫氧化鎂、氫氧化鐵、氫氧化鈣、氫氧化錫、複合化金屬氫氧化物等的各種金屬氫氧化物;偶磷氮系難燃劑等。其中,由難燃性、在未硬化狀態的柔軟性、硬化後的強度優異之理由,以偶磷氮系難燃劑為佳、式(1)或式(2)所表示之化合物為佳。 The resin sheet 11 is preferably a component containing a flame retardant. Thereby, it is possible to reduce the short-circuiting of the parts, heat generation, etc., and to expand the combustion at the time of fire. For the composition of the flame retardant, for example, various metal hydroxides such as aluminum hydroxide, magnesium hydroxide, iron hydroxide, calcium hydroxide, tin hydroxide, and composite metal hydroxide can be used; Agents, etc. Among them, a compound represented by the formula (1) or the formula (2) is preferable because the flame retardancy, the flexibility in the uncured state, and the strength after curing are excellent, and the phosphine-based flame retardant is preferable.
(式中,R1及R2相同或相異,為烷氧基、苯氧基、胺基、羥基、烯丙基或具有由此等的基所構成群所選出的至少1種基的1價的有機基。X為3~25的整數。) (wherein R 1 and R 2 are the same or different and are alkoxy, phenoxy, amine, hydroxy, allyl or at least one selected from the group consisting of The organic base of the valence. X is an integer from 3 to 25.)
(式中,R3及R5相同或相異,為烷氧基、苯氧基、胺基、羥基、烯丙基或具有由此等的基所構成群所選出的至少1種基的1價的有機基。R4為具有烷氧基、苯氧基、胺基、羥基及烯丙基所構成群所選出的至少1種基的2價的有機基。y為3~25的整數。z為3~25的整數。) (wherein R 3 and R 5 are the same or different and each is an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, an allyl group or at least one group selected from the group consisting of such groups; The organic group of the valence. R 4 is a divalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group. y is an integer of 3 to 25. z is an integer from 3 to 25.)
R1及R2的烷氧基方面,可舉例如,甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中,以碳數4~10的烷氧基為佳。 Examples of the alkoxy group of R 1 and R 2 include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, and a t-butoxy group. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R1及R2的苯氧基方面,可舉例如式(3)所表示之基。 The phenoxy group of R 1 and R 2 may, for example, be a group represented by the formula (3).
(式中,R11為氫、羥基、烷基、烷氧基、縮水甘油基或具有由此等的基所構成群所選出的至少1種基的1價的有機基。) (wherein R 11 is hydrogen, a hydroxyl group, an alkyl group, an alkoxy group, a glycidyl group or a monovalent organic group having at least one group selected from the group consisting of such a group.)
R11的烷基方面,例如,甲基、乙基、n-丙基、異丙基、n-丁基、iso-丁基、sec-丁基、tert-丁基、戊基、己基、庚基、2-乙基己基、辛基、壬基、癸基、十一基、十二基、十三基、十四基、十五基、十八基等。R11的烷氧基方面,可舉例與R1及R2的烷氧基同樣的基。 The alkyl aspect of R 11 , for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, hexyl, g. Base, 2-ethylhexyl, octyl, decyl, decyl, undecyl, dodecyl, thirteenyl, tetradecyl, fifteen, eleven, and the like. The alkoxy group of R 11 may, for example, be the same group as the alkoxy group of R 1 and R 2 .
R1及R2方面,由可得到良好難燃性、硬化後的強度之理由,以苯氧基為佳、式(3)所表示之基更佳。 In the case of R 1 and R 2 , a phenoxy group is preferred, and a group represented by the formula (3) is more preferable because of good flame retardancy and strength after hardening.
X為3~25的整數,但由可得到良好難燃性、 硬化後的強度之理由,以3~10為佳、3~4更佳。 X is an integer from 3 to 25, but good flame retardancy is obtained. The reason for the strength after hardening is preferably 3 to 10 and more preferably 3 to 4.
式(2)中,R3及R5的烷氧基方面,可舉例如甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中,以碳數4~10的烷氧基為佳。 In the formula (2), the alkoxy group of R 3 and R 5 may, for example, be a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group or a t-butoxy group. Wait. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R3及R5的苯氧基方面,例如,前述式(3)所表示之基。 The phenoxy group of R 3 and R 5 is, for example, a group represented by the above formula (3).
R3及R5中具有烷氧基、苯氧基、胺基、羥基及烯丙基所構成群所選出的至少1種基的1價的有機基,不特別限定。 The monovalent organic group having at least one group selected from the group consisting of an alkoxy group, a phenoxy group, an amine group, a hydroxyl group, and an allyl group in R 3 and R 5 is not particularly limited.
R3及R5方面,由可得到良好難燃性、硬化後的強度之理由,以苯氧基為佳、式(3)所表示之基更佳。 In the case of R 3 and R 5 , a phenoxy group is preferred, and a group represented by the formula (3) is more preferable because of good flame retardancy and strength after hardening.
R4之2價的有機基所具有的烷氧基方面,例如,甲氧基、乙氧基、n-丙氧基、異丙氧基、n-丁氧基、t-丁氧基等。其中,以碳數4~10的烷氧基為佳。 The alkoxy group which the divalent organic group of R 4 has is, for example, a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group, an n-butoxy group, a t-butoxy group or the like. Among them, an alkoxy group having 4 to 10 carbon atoms is preferred.
R4之2價的有機基所具有的苯氧基方面,例如,前述式(3)所表示之基。 The phenoxy group which the organic group of the divalent valence of R 4 has, for example, the group represented by the above formula (3).
y為3~25的整數,但由可得到良好難燃性、硬化後的強度之理由,以3~10為佳。 y is an integer of 3 to 25, but it is preferably 3 to 10 because of good flame retardancy and strength after hardening.
z為3~25的整數,但由可得到良好難燃性、硬化後的強度之理由,以3~10為佳。 z is an integer of 3 to 25, but it is preferably 3 to 10 because of good flame retardancy and strength after hardening.
由即使少量仍可發揮難燃效果之觀點,偶磷氮系難燃劑所含有的磷元素的含有率以12重量%以上為佳。 The content of the phosphorus element contained in the phosphorous-nitrogen-based flame retardant is preferably 12% by weight or more from the viewpoint of exhibiting a flame retardant effect even in a small amount.
樹脂薄片11中之難燃劑成分的含量為全有機 成分中之10重量%以上為佳、15重量%以上更佳。在10重量%以上,則可得到良好難燃性。樹脂薄片11中之熱可塑性樹脂的含量為全有機成分中之30重量%以下為佳、25重量%以下更佳。在30重量%以下,則有硬化物的物性降低(具體上,為玻璃轉化溫度或高溫樹脂強度等的物性的降低)少的傾向。 The content of the flame retardant component in the resin sheet 11 is all organic More preferably, 10% by weight or more of the component is more preferably 15% by weight or more. When it is 10% by weight or more, good flame retardancy can be obtained. The content of the thermoplastic resin in the resin sheet 11 is preferably 30% by weight or less, more preferably 25% by weight or less, based on the total organic component. When it is 30% by weight or less, the physical properties of the cured product tend to decrease (specifically, the physical properties such as the glass transition temperature or the high-temperature resin strength are lowered).
樹脂薄片11以含有矽烷耦合劑為佳。矽烷耦合劑方面,不特別限制,可舉例如3-環氧丙氧基丙基三甲氧基矽烷等。 The resin sheet 11 is preferably a decane coupling agent. The decane coupling agent is not particularly limited, and examples thereof include 3-glycidoxypropyltrimethoxydecane.
樹脂薄片11中之矽烷耦合劑的含量以0.1~3重量%為佳。上述含量在0.1重量%以上,則可使硬化後的樹脂薄片的強度提高,同時可使吸水率降低。另一方面,上述含量在3重量%以下,則可抑制釋氣的產生。 The content of the decane coupling agent in the resin sheet 11 is preferably 0.1 to 3% by weight. When the content is 0.1% by weight or more, the strength of the resin sheet after curing can be improved, and the water absorption rate can be lowered. On the other hand, when the content is 3% by weight or less, the generation of outgas can be suppressed.
樹脂薄片11以含有顏料為佳。顏料方面,不特別限制,可舉例如碳黑等。 The resin sheet 11 is preferably a pigment. The pigment is not particularly limited, and examples thereof include carbon black.
樹脂薄片11中之顏料的含量以0.1~2重量%為佳。在0.1重量%以上,則可得到對樹脂薄片的良好的標記性。另一方面,上述含量在2重量%以下,則硬化後的樹脂薄片的強度良好。 The content of the pigment in the resin sheet 11 is preferably 0.1 to 2% by weight. When it is 0.1% by weight or more, good marking properties to the resin sheet can be obtained. On the other hand, when the content is 2% by weight or less, the strength of the cured resin sheet is good.
又,樹脂組成物中,除上述的各成分以外,因應必要,可適當添加其他添加劑。 Further, in the resin composition, in addition to the above respective components, other additives may be appropriately added as necessary.
樹脂薄片11的硬化前的80℃中動的黏度以5000Pa.s以上30000Pa.s以下為佳、7000Pa.s以上25000Pa.s以下較佳、10000Pa.s以上20000Pa.s以下更 佳。樹脂薄片11的動的黏度藉由在上述範圍,可有效率地兼具中空構造之確保與在中空構造以外的部分的凹凸追隨性。 The viscosity of the resin sheet 11 before curing at 80 ° C is 5000 Pa. s above 30000Pa. s below is better, 7000Pa. s above 25000Pa. s is better, 10000Pa. s above 20000Pa. s below good. In the above range, the dynamic viscosity of the resin sheet 11 can be efficiently ensured both in the hollow structure and in the unevenness of the portion other than the hollow structure.
樹脂薄片11之製造方法不特別限定,但以調製混練物,將得到的混練物加工為薄片狀之方法為佳。具體上,藉由將上述的各成分以混合輥、加壓式揉合機、擠出機等的習知混練機進行熔融混練,調製混練物,將得到的混練物加工為薄片狀。混練條件方面,溫度為上述的各成分的軟化點以上為佳,例如30~150℃,考量環氧樹脂的熱硬化性,較佳為40~140℃、更佳為60~120℃。時間例如為1~30分鐘、較佳為5~15分鐘。 The method for producing the resin sheet 11 is not particularly limited, but a method of preparing the kneaded material and processing the obtained kneaded product into a sheet shape is preferred. Specifically, the above-described components are melt-kneaded by a conventional kneading machine such as a mixing roll, a press kneader, or an extruder to prepare a kneaded product, and the obtained kneaded product is processed into a sheet shape. The kneading conditions are preferably at least the softening point of each of the above components, for example, 30 to 150 ° C, and the thermosetting property of the epoxy resin is preferably 40 to 140 ° C, more preferably 60 to 120 ° C. The time is, for example, 1 to 30 minutes, preferably 5 to 15 minutes.
混練以在減壓條件下(減壓環境下)進行為佳。減壓條件下的壓力之上限,較佳為0.1kg/cm2以下、更較佳為0.05kg/cm2以下。減壓條件下的壓力之下限雖然愈低愈好,但由生產性或物理的界限,亦可為1×10-4kg/cm2以上。藉由此,可防止氣體混入混練物,可抑制得到的混練物中氣孔的產生。 The kneading is preferably carried out under reduced pressure (under reduced pressure). The upper limit of the pressure under reduced pressure is preferably 0.1 kg/cm 2 or less, more preferably 0.05 kg/cm 2 or less. Although the lower limit of the pressure under reduced pressure is as good as possible, it may be 1 × 10 -4 kg / cm 2 or more from the limit of productivity or physicality. Thereby, it is possible to prevent gas from being mixed into the kneaded material, and it is possible to suppress the generation of pores in the obtained kneaded material.
熔融混練後的混練物以不冷卻而維持在高溫狀態加工為佳。加工方法方面,不特別限制,可舉例如平板加壓法、T模頭擠出法、輥壓延法、輥混練法、吹塑擠出法、共擠出法、壓延成形法等。加工溫度以在上述的各成分的軟化點以上為佳,若考量環氧樹脂的熱硬化性及成 形性,例如40~150℃、較佳為50~140℃、更佳為70~120℃。 It is preferred that the kneaded material after the melt kneading is maintained at a high temperature without cooling. The processing method is not particularly limited, and examples thereof include a plate press method, a T die extrusion method, a roll calendering method, a roll kneading method, a blow molding method, a coextrusion method, and a calender molding method. The processing temperature is preferably at least the softening point of each of the above components, and the thermal hardening property and the epoxy resin are considered. The shape is, for example, 40 to 150 ° C, preferably 50 to 140 ° C, more preferably 70 to 120 ° C.
樹脂薄片11的厚度雖不特別限定,但以100~2000μm為佳。在上述範圍內,則可良好地將電子裝置密封。又,藉由使樹脂薄片為薄型,可使發熱量降低,硬化收縮變得不易產生。結果,可使封裝翹曲量降低,可得到信賴性更高的中空封裝。 The thickness of the resin sheet 11 is not particularly limited, but is preferably 100 to 2000 μm. Within the above range, the electronic device can be well sealed. Moreover, by making the resin sheet thin, the calorific value can be lowered, and the hardening shrinkage is less likely to occur. As a result, the package warpage can be reduced, and a highly reliable hollow package can be obtained.
樹脂薄片11可為單層構造或層合2層以上的樹脂薄片之多層構造,但由無層間剝離之虞、薄片厚的均勻性高、易低吸濕化之理由,以單層構造為佳。 The resin sheet 11 may have a single layer structure or a multilayer structure in which two or more layers of resin sheets are laminated. However, it is preferable to use a single layer structure because the layer is not peeled off between layers, the sheet thickness is uniform, and the moisture absorption is easy to be low. .
樹脂薄片11用於SAW(Surface Acoustic Wave)過濾器;壓力感測器、振動感測器等的MEMS(Micro Electro Mechanical Systems);LSI等的IC、電晶體等的半導體;電容器;電阻;CMOS感測器等的電子裝置的密封。其中,可宜用於需要中空密封的電子裝置(具體上,SAW過濾器、MEMS)之密封,尤宜用於SAW過濾器之密封。 The resin sheet 11 is used for a SAW (Surface Acoustic Wave) filter; a MEMS (Micro Electro Mechanical Systems) such as a pressure sensor or a vibration sensor; an IC such as an LSI or a semiconductor such as a transistor; a capacitor; a resistor; Sealing of electronic devices such as detectors. Among them, it can be suitably used for the sealing of electronic devices (specifically, SAW filters, MEMS) requiring a hollow seal, and is particularly suitable for the sealing of SAW filters.
圖2A~2C各自為本發明的一實施形態之中空封裝製造方法的一步驟模式表示之圖。中空密封方法方面,不特別限制,可用以往習知的方法進行密封。例如,以包覆被附著體上的電子裝置之方式,將未硬化的樹脂薄片11一邊維持中空構造一邊層合(載置)於基板上,接著將樹脂薄 片11硬化進行密封的方法等。被附著體方面,不特別限制,例如,印刷配線基板、陶瓷基板、矽基板、金屬基板等。在本實施形態,印刷配線基板12上搭載的SAW晶片13藉由樹脂薄片11進行中空密封,製作中空封裝。 2A to 2C are each a schematic diagram showing a step mode of a method of manufacturing a hollow package according to an embodiment of the present invention. The hollow sealing method is not particularly limited and may be sealed by a conventional method. For example, the uncured resin sheet 11 is laminated (mounted) on the substrate while maintaining the hollow structure so as to cover the electronic device on the adherend, and then the resin is thin. The sheet 11 is hardened to be sealed, and the like. The adherend is not particularly limited, and examples thereof include a printed wiring board, a ceramic substrate, a tantalum substrate, and a metal substrate. In the present embodiment, the SAW wafer 13 mounted on the printed wiring board 12 is hollow-sealed by the resin sheet 11, and a hollow package is produced.
在SAW晶片搭載基板準備步驟,準備搭載有複數的SAW晶片13的印刷配線基板12(圖2A做為參考)。SAW晶片13可藉由使形成有指定的梳形電極的壓電結晶以習知的方法進行切割後個片化來形成。SAW晶片13搭載至印刷配線基板12,可使用覆晶焊接機或固晶機等的習知的裝置。SAW晶片13與印刷配線基板12,透過凸塊等的突起電極13a被電接續。又,SAW晶片13與印刷配線基板12間,以不阻礙在SAW過濾器表面的表面彈性波之傳播的方式,維持著中空部分14。SAW晶片13與印刷配線基板12間的距離可適當設定,一般為10~100μm左右。 In the SAW wafer mounting substrate preparation step, the printed wiring substrate 12 on which the plurality of SAW wafers 13 are mounted is prepared (see FIG. 2A for reference). The SAW wafer 13 can be formed by subjecting a piezoelectric crystal having a specified comb-shaped electrode to a dicing process by a conventional method. The SAW wafer 13 is mounted on the printed wiring board 12, and a conventional device such as a flip chip bonding machine or a die bonding machine can be used. The SAW wafer 13 and the printed wiring board 12 are electrically connected to each other through the bump electrodes 13a such as bumps. Further, between the SAW wafer 13 and the printed wiring board 12, the hollow portion 14 is maintained so as not to hinder the propagation of the surface elastic wave on the surface of the SAW filter. The distance between the SAW wafer 13 and the printed wiring board 12 can be appropriately set, and is generally about 10 to 100 μm.
在密封步驟,使樹脂薄片11層合於印刷配線基板12以包覆SAW晶片13,將SAW晶片13以樹脂薄片11進行樹脂密封(圖2B做為參考)。樹脂薄片11係用作自外部環境保護SAW晶片13及附隨其之要素的密封樹脂。 In the sealing step, the resin sheet 11 is laminated on the printed wiring substrate 12 to cover the SAW wafer 13, and the SAW wafer 13 is resin-sealed with the resin sheet 11 (refer to FIG. 2B for reference). The resin sheet 11 is used as a sealing resin from the external environmental protection SAW wafer 13 and the elements attached thereto.
將樹脂薄片11層合於印刷配線基板12上的方法不特別限制,可藉由熱壓或層合等習知的方法進行。 熱壓條件方面,溫度例如為40~100℃、較佳為50~90℃,壓力例如為0.1~10MPa、較佳為0.5~8MPa,時間例如為0.3~10分鐘、較佳為0.5~5分鐘。又,若考量樹脂薄片11的對SAW晶片13及印刷配線基板12的密著性及追隨性的提升,以減壓條件下(例如0.1~5kPa)進行加壓為佳。 The method of laminating the resin sheet 11 on the printed wiring board 12 is not particularly limited, and it can be carried out by a conventional method such as hot pressing or lamination. The hot pressing condition is, for example, 40 to 100 ° C, preferably 50 to 90 ° C, and the pressure is, for example, 0.1 to 10 MPa, preferably 0.5 to 8 MPa, and the time is, for example, 0.3 to 10 minutes, preferably 0.5 to 5 minutes. . In addition, when the adhesion and followability of the resin sheet 11 to the SAW wafer 13 and the printed wiring board 12 are increased, it is preferable to pressurize under a reduced pressure condition (for example, 0.1 to 5 kPa).
在密封體形成步驟,使樹脂薄片11進行熱硬化處理形成密封體15(圖2B做為參考)。熱硬化處理的條件方面,加熱溫度較佳為100℃以上、更較佳為120℃以上。另一方面,加熱溫度的上限較佳為200℃以下、更較佳為180℃以下。加熱時間較佳為10分鐘以上、更較佳為30分鐘以上。另一方面,加熱時間的上限較佳為180分鐘以下、更較佳為120分鐘以下。又,因應必要亦可加壓,較佳為0.1MPa以上、更較佳為0.5MPa以上。另一方面,上限較佳為10MPa以下、更較佳為5MPa以下。 In the sealing body forming step, the resin sheet 11 is subjected to a heat hardening treatment to form a sealing body 15 (refer to Fig. 2B for reference). In terms of the conditions of the heat hardening treatment, the heating temperature is preferably 100 ° C or higher, more preferably 120 ° C or higher. On the other hand, the upper limit of the heating temperature is preferably 200 ° C or lower, more preferably 180 ° C or lower. The heating time is preferably 10 minutes or longer, more preferably 30 minutes or longer. On the other hand, the upper limit of the heating time is preferably 180 minutes or shorter, more preferably 120 minutes or shorter. Further, it may be pressurized if necessary, and is preferably 0.1 MPa or more, and more preferably 0.5 MPa or more. On the other hand, the upper limit is preferably 10 MPa or less, and more preferably 5 MPa or less.
接著,可進行密封體15的切割(圖2C做為參考)。藉由此,可得到在SAW晶片13單位的中空封裝18。 Next, the sealing of the sealing body 15 can be performed (see Fig. 2C for reference). Thereby, a hollow package 18 of 13 units in the SAW wafer can be obtained.
因應必要,可進行對中空封裝18形成再配線及凸 塊,將此實裝於另外的基板(未圖示)的基板實裝步驟。中空封裝18對基板的實裝,可使用覆晶焊接機或固晶機等的習知的裝置。 Rewiring and convexizing of the hollow package 18 can be performed as necessary This block is mounted on a substrate mounting step of another substrate (not shown). For the mounting of the hollow package 18 to the substrate, a conventional device such as a flip chip bonding machine or a die bonding machine can be used.
在第1實施形態,將各搭配成分以揉合機等進行混練,調製混練物,使該混練物擠出成形,形成薄片狀。相對於此,在本實施形態,塗佈使各成分溶解或分散於有機溶劑等的清漆,形成薄片狀。 In the first embodiment, each of the components is kneaded by a kneading machine or the like to prepare a kneaded product, and the kneaded product is extrusion molded to form a sheet. On the other hand, in the present embodiment, a varnish in which each component is dissolved or dispersed in an organic solvent or the like is applied to form a sheet.
使用清漆之具體之製作過程方面,將上述成分及因應必要的其他添加劑依據常法適宜混合,使均勻溶解或者分散在有機溶劑,調製清漆。接著,藉由將上述清漆塗佈於聚酯等支持體上使乾燥,可得到中空密封用樹脂薄片11。接著依需要,為了保護中空密封用樹脂薄片的表面,亦可貼合聚酯薄膜等之剝離薄片。剝離薄片在密封時剝離。 In the specific production process of the varnish, the above-mentioned components and other additives necessary for the varnish are appropriately mixed according to a usual method to uniformly dissolve or disperse in an organic solvent to prepare a varnish. Then, the varnish is applied onto a support such as polyester and dried to obtain a resin sheet 11 for hollow sealing. Then, if necessary, a release sheet such as a polyester film may be bonded to protect the surface of the resin sheet for hollow sealing. The release sheet peeled off upon sealing.
上述有機溶劑方面,不特別限定,可使用以往習知的各種有機溶劑,例如甲基乙基酮、丙酮、環己酮、二噁烷、二乙基酮、甲苯、乙酸乙基酯等。此等可單獨使用或2種以上併用。又通常以使用有機溶劑使清漆的固形分濃度成為30~95重量%的範圍為佳。 The organic solvent is not particularly limited, and various conventional organic solvents such as methyl ethyl ketone, acetone, cyclohexanone, dioxane, diethyl ketone, toluene, ethyl acetate, and the like can be used. These may be used alone or in combination of two or more. Further, it is usually preferred to use an organic solvent in a range of 30 to 95% by weight of the solid content of the varnish.
有機溶劑乾燥後的薄片的厚度,雖不特別限定,由厚度的均勻性與殘存溶劑量的觀點,通常以設定為5~100μm為佳、更較佳為20~70μm。 The thickness of the sheet after the drying of the organic solvent is not particularly limited, but is preferably 5 to 100 μm, more preferably 20 to 70 μm, from the viewpoint of uniformity of thickness and amount of residual solvent.
以下,例示詳細說明本發明的較佳實施例。但,該實施例所記載的材料或搭配量等在未特別限定記載下,不限定本發明的範圍僅於彼等。 Hereinafter, preferred embodiments of the present invention will be described in detail. However, the materials, the collocation amounts, and the like described in the examples are not particularly limited, and the scope of the invention is not limited thereto.
說明實施例使用的成分。 The ingredients used in the examples are illustrated.
環氧樹脂:新日鐵化學(股)製的YSLV-80XY(雙酚F型環氧樹脂、環氧當量200g/eq.、軟化點80℃) Epoxy resin: YSLV-80XY (bisphenol F type epoxy resin, epoxy equivalent 200g/eq., softening point 80 °C) manufactured by Nippon Steel Chemical Co., Ltd.
酚樹脂:明和化成公司製的MEH-7851-SS(具有聯苯基芳烷基骨架的酚樹脂、羥基當量203g/eq.、軟化點67℃) Phenol resin: MEH-7851-SS (a phenol resin having a biphenyl aralkyl skeleton, a hydroxyl equivalent of 203 g/eq., a softening point of 67 ° C) manufactured by Minghe Chemical Co., Ltd.
熱可塑性樹脂:KANEKA公司製的SIBSTER 072T(苯乙烯-異丁烯-苯乙烯嵌段共聚合物) Thermoplastic resin: SIBSTER 072T (styrene-isobutylene-styrene block copolymer) manufactured by KANEKA
無機充填劑1:電化學工業公司製的FB-9454FC(熔融球狀二氧化矽、平均粒子徑20μm) Inorganic Filler 1: FB-9454FC (Fused Spherical Cerium Oxide, Average Particle Diameter 20 μm) manufactured by Electrochemical Industry Co., Ltd.
無機充填劑2:(股)Tokuyama公司製的SE-40(熔融球狀二氧化矽、平均粒子徑38μm) Inorganic filler 2: SE-40 (melt spherical cerium oxide, average particle diameter 38 μm) manufactured by Tokuyama Co., Ltd.
無機充填劑3:電化學工業公司製的FB-5SDC(熔融球狀二氧化矽、平均粒子徑5μm) Inorganic filler 3: FB-5SDC manufactured by Electrochemical Industry Co., Ltd. (melted spherical ceria, average particle diameter 5 μm)
無機充填劑4:(股)Admatechs公司製的SO-25R(熔融球狀二氧化矽、平均粒子徑0.5μm) Inorganic filler 4: SO-25R (melt spherical cerium oxide, average particle diameter 0.5 μm) manufactured by Admatechs Co., Ltd.
矽烷耦合劑:信越化學公司製的KBM-403(3-環氧丙氧基丙基三甲氧基矽烷) 矽Case coupling agent: KBM-403 (3-glycidoxypropyltrimethoxydecane) manufactured by Shin-Etsu Chemical Co., Ltd.
碳黑:三菱化學公司製的#20 Carbon black: #20 from Mitsubishi Chemical Corporation
難燃劑:伏見製藥所製的FP-100(偶磷氮系難燃劑: 式(4)所表示之化合物) Flame Retardant: FP-100 (Azo Phosphorus Flammable Agent) made by Fushimi Pharmaceutical Co., Ltd. a compound represented by the formula (4)
(式中,m為3~4的整數。) (where m is an integer from 3 to 4.)
硬化促進劑:四國化成工業公司製的2PHZ-PW(2-苯基-4,5-二羥基甲基咪唑) Hardening accelerator: 2PHZ-PW (2-phenyl-4,5-dihydroxymethylimidazole) manufactured by Shikoku Chemicals Co., Ltd.
依據表1記載之搭配比,搭配各成分,藉由輥混練機在60~120℃、10分鐘、減壓條件下(0.01kg/cm2)進行熔融混練,調製混練物。接著,使得到的混練物以平板加壓法成形為薄片狀,製作表1所示之厚度的中空密封用樹脂薄片。 According to the mixing ratio described in Table 1, the components were mixed and kneaded by a roll kneading machine at 60 to 120 ° C for 10 minutes under reduced pressure (0.01 kg/cm 2 ) to prepare a kneaded product. Then, the obtained kneaded material was formed into a sheet shape by a flat plate pressing method, and a resin sheet for hollow sealing having a thickness shown in Table 1 was produced.
依據表1記載之搭配比,使各成分溶解或分散在甲基乙基酮與甲苯之1:1混合溶劑,製作固形分40重量%之清漆。接著,在施以脫膜處理的PET薄膜上,塗佈清漆使溶劑乾燥後的塗膜的厚度成為50μm,之後,以乾燥條件為120℃、3分鐘,使塗膜乾燥,得到厚度50μm的樹脂薄片。將得到的樹脂薄片使用層合機層合至厚度 200μm,製作厚度200μm的中空密封用樹脂薄片。 According to the mixing ratio described in Table 1, each component was dissolved or dispersed in a 1:1 mixed solvent of methyl ethyl ketone and toluene to prepare a varnish having a solid content of 40% by weight. Next, on the PET film subjected to the release treatment, the thickness of the coating film after the varnish was applied to dry the solvent was 50 μm, and then the coating film was dried under the drying condition of 120 ° C for 3 minutes to obtain a resin having a thickness of 50 μm. Sheet. Laminating the obtained resin sheet to a thickness using a laminator 200 μm, a resin sheet for hollow sealing having a thickness of 200 μm was produced.
將實施例及比較例的各自之中空密封用樹脂薄片置入坩鍋,大氣環境下、700℃進行2小時強熱使灰化。將得到的灰分分散於純水中,進行超音波處理,使用雷射繞射散射式粒度分佈測定裝置(HORIBA製、裝置名;LA-910),求出粒度分佈(體積基準)。又,中空密封用樹脂薄片的組成,因無機充填劑以外為有機成分,經上述強熱處理而實質上全部的有機成分燒去,故以得到的灰分視作為無機充填劑,進行測定。結果如表1所示。 Each of the resin sheets for hollow sealing of the examples and the comparative examples was placed in a crucible, and heated at 700 ° C for 2 hours to ash. The obtained ash was dispersed in pure water, subjected to ultrasonic treatment, and a particle size distribution (volume basis) was determined using a laser diffraction scattering type particle size distribution measuring apparatus (manufactured by HORIBA, device name; LA-910). Further, the composition of the resin sheet for hollow sealing is an organic component other than the inorganic filler, and substantially all of the organic components are burned off by the above-described intense heat treatment. Therefore, the obtained ash is measured as an inorganic filler. The results are shown in Table 1.
測定熱硬化前的中空密封用樹脂薄片在80℃之動黏度。動黏度為使用TA instrument公司製黏彈性測定裝置ARES,以平行板法測定的值。更詳細係以間隙1mm、旋轉板直徑8mm、測定周波數0.1Hz條件,在60℃~130℃的範圍以10℃/min之昇溫速度測定,以此時得到的在80℃的熔融黏度作為動黏度。結果如表1所示。 The dynamic viscosity of the resin sheet for hollow sealing before thermosetting at 80 ° C was measured. The dynamic viscosity is a value measured by a parallel plate method using a viscoelasticity measuring apparatus ARES manufactured by TA Instruments. More specifically, the gap was 1 mm, the rotating plate diameter was 8 mm, and the number of measured cycles was 0.1 Hz. The temperature was measured at a temperature rising rate of 10 ° C/min in the range of 60 ° C to 130 ° C, and the melt viscosity at 80 ° C obtained at this time was used as a dynamic. Viscosity. The results are shown in Table 1.
將形成有鋁梳形電極的以下樣式的SAW晶片用下述接合條件,製作實裝於玻璃基板的SAW晶片實裝基板。SAW晶片與玻璃基板間的間隙寬在實施例1~3、5及比 較例1~2為30μm,在實施例4為90μm。 A SAW wafer of the following type in which an aluminum comb-shaped electrode was formed was used to produce a SAW wafer mounting substrate mounted on a glass substrate under the following bonding conditions. The gap between the SAW wafer and the glass substrate is wide in Examples 1-3, 5, and Comparative Examples 1 to 2 were 30 μm, and Example 4 was 90 μm.
晶片尺寸:1.2mm□(厚度150μm) Wafer size: 1.2mm □ (thickness 150μm)
凸塊材質(實施例1~3、5及比較例1~2):Au(高度30μm) Bump material (Examples 1 to 3, 5 and Comparative Examples 1 and 2): Au (height 30 μm)
凸塊材質(實施例4):焊料(無鉛型)(高度90μm) Bump material (Example 4): Solder (lead-free) (height 90 μm)
凸塊數:6凸塊 Number of bumps: 6 bumps
晶片數:100個(10個×10個) Number of wafers: 100 (10 × 10)
裝置:松下電工(股)製 Device: Matsushita Electric Works Co., Ltd.
接合條件:200℃、3N、1sec超音波輸出2W Bonding conditions: 200°C, 3N, 1sec ultrasonic output 2W
在得到的SAW晶片實裝基板上,以下所示之加熱加壓條件下、將各中空密封薄片以真空加壓貼合。 On each of the obtained SAW wafer mounting substrates, each of the hollow sealing sheets was bonded under vacuum under pressure and pressure.
溫度:60℃ Temperature: 60 ° C
加壓力:4MPa Pressure: 4MPa
真空度:1.6kPa Vacuum degree: 1.6kPa
加壓時間:1分鐘 Pressurization time: 1 minute
開放於大氣壓後,在熱風乾燥機中、150℃、1小時的條件,使中空密封薄片熱硬化,得到密封體。自玻璃基 板側以電子顯微鏡(KEYENCE公司製、商品名「數位顯微鏡」、200倍),測定SAW晶片與玻璃基板間的中空部之樹脂進入量。樹脂進入量為中空密封薄片密封前自玻璃基板側以電子顯微鏡確認及記憶SAW晶片的端部位置,密封後再度自玻璃基板側以電子顯微鏡觀察,比較密封前後的觀察像,測定密封前確認到的自SAW晶片的端部進入至中空部的樹脂的最大到達距離,以其作為樹脂進入量。樹脂進入量為20μm以下場合評估為「○」、超過20μm場合評估為「×」。結果如表1所示。 After opening to atmospheric pressure, the hollow sealing sheet was thermally cured in a hot air dryer at 150 ° C for 1 hour to obtain a sealed body. Glass based The amount of resin entering the hollow portion between the SAW wafer and the glass substrate was measured by an electron microscope (manufactured by Keyence Corporation, "Digital Microscope", 200 times). The amount of resin entering was confirmed by an electron microscope from the glass substrate side before the sealing of the hollow sealing sheet. The end position of the SAW wafer was confirmed by an electron microscope. After sealing, the glass substrate was again observed by an electron microscope, and the observed image before and after sealing was compared. The maximum reach distance of the resin entering the hollow portion from the end of the SAW wafer is used as the resin entry amount. When the amount of resin entering is 20 μm or less, it is evaluated as "○", and when it exceeds 20 μm, it is evaluated as "x". The results are shown in Table 1.
由表1可明白,在實施例1~5的SAW晶片封裝,中空密封薄片的樹脂成分進入中空部受到抑制,即使中空部擴大,仍可製作高品質中空封裝。在比較例1~2,樹脂進入中空部之量皆為20μm。 As is clear from Table 1, in the SAW wafer packages of Examples 1 to 5, the resin component of the hollow sealing sheet enters the hollow portion and is suppressed, and even if the hollow portion is enlarged, a high-quality hollow package can be produced. In Comparative Examples 1 and 2, the amount of the resin entering the hollow portion was 20 μm.
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