TWI536555B - High voltage LED light emitting device - Google Patents

Description

High voltage LED lighting device

The invention relates to an LED lighting device, in particular to a high voltage LED lighting device with multiple grains.

Currently used in LED devices such as displays or related applications, most of them are low voltage (1 to 4V driving voltage) and low current (20mA driving current). However, if the LED device is to be applied to general illumination, for example, as indoor lighting, the LED device must be used for a DC voltage of 110 V (or higher), making it available for high voltage, low current. Conditions of Use. Referring to FIG. 1 , when a high-voltage and low-current LED light-emitting device is generally prepared, a plurality of packaged LED dies 11 are connected by wires 12 by wires 12 by wire bonding. It can be obtained after the connection. However, when the LED dies 11 are connected in series, since the position of the LED dies 11 is grasped by the robot arm before the wire is aligned, the arrangement distance S between the LED dies 11 is affected by the operating mechanism. There is a limitation of the distance, and therefore, the overall area of the produced high-voltage low-current LED lighting device is large.

Referring to FIG. 2, in order to solve the problem that the overall area of the high-voltage low-current LED light-emitting device is too large, the manufacturer also uses the single chip. A plurality of light-emitting units 13 that can independently emit light are formed on the 100, and then the light-emitting units 13 that can independently emit light are connected in series by wires 12, thereby reducing the overall area of the high-voltage low-current LED light-emitting device. . For example, in US Pat. No. 20120305951A1, it is disclosed that the LED lighting units of the two arrays are connected in series by using a plurality of LED lighting units in a double array, and the arrangement of the LED lighting units can be further arranged. Close, further reducing the area.

However, in the above-mentioned high-voltage low-current light-emitting device, since the electrical connection between the LED light-emitting units 13 is connected by a wire bonding method, the subsequent alignment using the external electrical connection is relatively difficult, and the problem of disconnection is likely to occur; Further, since the light-emitting direction of the light-emitting device (as indicated by an arrow in FIG. 2) is shielded by the electrodes, there is also a problem that the electrode is shielded from light.

Accordingly, it is an object of the present invention to provide a high voltage LED lighting device that is electrodeless and has a good alignment.

Thus, the high voltage LED lighting device of the present invention comprises a substrate, a light emitting module, a plurality of first insulating layers, a plurality of conductive layers, an extended electrode unit and a second insulating layer.

The substrate has a surface opposite to each other and a bottom surface.

The light-emitting module has a plurality of first light-emitting units and two second light-emitting units. The two second light-emitting units are relatively far away from each other, and the first and second light-emitting units are spaced apart from each other and are spaced apart from the substrate. a surface, wherein each of the first and second light emitting units has a sequence from the substrate a first type semiconductor layer, a light emitting layer, a second type semiconductor, and first and second electrodes respectively formed on portions of the surface of the first and second type semiconductor layers.

The first insulating layers are respectively located in gaps between the first and second light emitting units.

Each of the conductive layers spans a surface of the first insulating layer between the adjacent first light emitting unit and the first and second light emitting units, and the first electrode of one of the light emitting units and the second electrode of the other of the light emitting units Electrically connected and the conductive layers are not in contact with each other.

The extension electrode unit has a first extension electrode extending upward from a first electrode of one of the second illumination units, and a second extension electrode extending upward from a second electrode of the other second illumination unit.

The second insulating layer is transparent to light and located between the first and second extending electrodes to cover the surface of the light emitting module and the conductive layers.

Preferably, the high voltage LED lighting device further comprises a reflective layer formed on the surface of the second insulating layer and not in contact with the first and second extension electrodes.

Preferably, the high voltage LED lighting device has a roughened microstructure on the back side of the substrate.

Further, another object of the present invention is to provide a high voltage LED lighting device.

Thus, the high voltage LED lighting device of the present invention comprises a light emitting module, a plurality of conductive layers, a second insulating layer, and an extended electrode unit.

The light emitting module has a plurality of first light emitting units, two second light emitting units, and an insulating unit connecting the first and second light emitting units, wherein the two second light emitting units are located on opposite sides of each other, and The first and second light emitting units are disposed at a gap between each other, and the insulating unit has a plurality of first insulating layers, and the first insulating layers are formed in a gap between the light emitting units, so that the first and second The light emitting units are connected to each other but are not in contact with each other, and each of the light emitting units has a first type semiconductor layer, a light emitting layer, a second type semiconductor stacked from bottom to top, and are respectively formed on the first type semiconductor layer and The first and second electrodes of a part of the surface of the two-type semiconductor layer.

Each of the conductive layers may span a surface of the first insulating layer between the adjacent first light emitting unit or the first and second light emitting units, and the first electrode of one of the light emitting units and the second electrode of the other of the light emitting units Electrically connected and the conductive layers are not in contact with each other.

The second insulating layer covers the surface of the light emitting module and the conductive layers.

The extension electrode unit has a first extension electrode extending from a first electrode of one of the second illumination units; and a second extension electrode extending from a second electrode of the other second illumination unit.

Preferably, the high-voltage LED light-emitting device, wherein the first and second extension electrodes extend from the first and second electrodes away from the substrate, and the second insulation layer is between the first and second electrodes. The two extend between the electrodes.

Preferably, the high voltage LED lighting device further includes a surface formed on the second insulating layer and not connected to the one or two extension electrodes. The reflective layer of the touch.

Preferably, the high voltage LED lighting device further includes a metal reflective layer covering the surface of the second insulating layer, and an electrode layer formed on the surface of the metal reflective layer, wherein the first extended electrode is oriented The back surface of the substrate extends, and the second extension electrode extends from the second electrode and is electrically connected to the metal reflective layer.

Preferably, in the high voltage LED lighting device, the exposed surface of the first type semiconductor layer of the first and second light emitting units has a roughened microstructure.

The utility model has the advantages that the plurality of light-emitting units are electrically connected to each other in series by the conductive layer by using the structural design, thereby obtaining a high-voltage LED module, wherein the high-voltage LED module can be externally connected by the extension electrode, not only The bit is easy and there is no problem with the electrode being blocked.

2‧‧‧Substrate

21‧‧‧ surface

22‧‧‧ Back

23‧‧‧ rough microstructure

3‧‧‧Lighting module

31‧‧‧First lighting unit

311‧‧‧First type semiconductor layer

312‧‧‧Lighting layer

313‧‧‧Second type semiconductor layer

314‧‧‧First electrode

315‧‧‧second electrode

32‧‧‧second lighting unit

321‧‧‧First type semiconductor layer

322‧‧‧Lighting layer

323‧‧‧Second type semiconductor layer

324‧‧‧First electrode

325‧‧‧second electrode

4‧‧‧First insulation

5‧‧‧ Conductive layer

6‧‧‧Extended electrode unit

61‧‧‧First extension electrode

62‧‧‧Second extension electrode

7‧‧‧Second insulation

8‧‧‧reflective layer

Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a schematic diagram illustrating a conventional high voltage and low current LED lighting device; FIG. 2 is a schematic diagram illustrating FIG. 3 is a cross-sectional view showing a preferred embodiment of the high voltage LED lighting device of the present invention; FIG. 4 is a cross-sectional view showing the high aspect of the present invention. The voltage LED lighting device further comprises a reflective layer; 5 is a cross-sectional view showing the substrate of the high voltage LED lighting device of the present invention having a rough microstructure; FIG. 6 is a cross-sectional view showing the high voltage LED lighting device of the present invention removing the substrate. Aspect.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 3, a preferred embodiment of the high voltage LED device of the present invention comprises a substrate 2, a light emitting module 3, a plurality of first insulating layers 4, a plurality of conductive layers 5, an extended electrode unit 6, and a first Two insulating layers 7.

The substrate 2 is selected from a substrate for epitaxial growth, such as a sapphire substrate, a gallium nitride substrate, a germanium substrate, or the like, and has a surface 21 and a back surface 22.

The light emitting module 3 is formed on the surface 21 and has a plurality of first light emitting units 31 and two second light emitting units 32. The first light-emitting unit 31 and the two second light-emitting units 32 are disposed on the surface 22 with a gap therebetween, and the two second light-emitting units 32 are disposed at positions distant from each other to serve as a subsequent The position of the external connection of the light-emitting module 3 to the outside. Each of the first light emitting units 31 has a first type semiconductor layer 311 formed on the surface 21, a light emitting layer 312 formed on a surface of the first type semiconductor layer 311, and a layer formed on the surface of the light emitting layer 312. a second semiconductor layer 313, and a first electrode 314 formed on the surfaces of the first and second semiconductor layers 311, 313, and a second electrode 315; Each of the second light emitting units 32 also has a first type semiconductor layer 321 formed on the surface 21, a light emitting layer 322 formed on a surface of the first type semiconductor layer 321 and a layer formed on the surface of the light emitting layer 322. The second type semiconductor layer 323 and a first electrode 324 and a second electrode 325 respectively formed on the surfaces of the first and second type semiconductor layers 321, 323.

The first type semiconductor layers 311 and 321 and the second type semiconductor layers 313 and 323 refer to semiconductor materials having opposite electrical properties. For example, when the first type semiconductor layers 311 and 321 are n-type semiconductor materials, the first type The second type semiconductor layers 313, 323 are p-type semiconductor materials; and when the first type semiconductor layers 311, 321 are p-type semiconductor materials, the second type semiconductor layers 313, 323 are n-type semiconductor materials. Since the material selection of the first and second light-emitting units 31, 32 is well known to those skilled in the art and is not the focus of the present invention, it will not be described again.

The first insulating layers 4 are transparent to light and are respectively located in the gaps between the first and second light emitting units 31 and 32. In detail, the first insulating layer 4 may be selected from a light-transmissive insulating material such as an epoxy resin or an oxide for filling a gap between the first and second light-emitting units 31 and 32, thereby isolating any adjacent ones. The possible contact between the first and second light-emitting units 31, 32, and the height difference caused by the gap is reduced. Preferably, the level of the first insulating layer 4 is between the second electrodes 315, 325 and the first Between the surfaces of the two-type semiconductor layers 313, 323.

The conductive layer 5 spans the surface of the first insulating layer 4 between the adjacent first light emitting unit 31 and the first and second light emitting units 31, 32, and one of the first light emitting unit 31 and the second light emitting unit 32 is disposed. First electric The poles 314, 324 are electrically connected to the adjacent first first light emitting unit 31 or the second electrodes 315, 325 of the second light emitting unit 32, and the conductive layers 5 are not in contact with each other. Since the conductive layers 5 are electrically connected to the adjacent first and second electrodes 314 and 315 across the gap, since the first insulating layers 4 are filled between the gaps, the conductive layers 5 may be Formed by deposition, unlike the conventional electrical connection between the light-emitting units, which must be performed in a wire-bonding manner, which can be more easily prepared; and since the conductive layers 5 can be supported by the first insulating layers 4, The electrical connection between the first and second light emitting units 31, 32 can be made more stable. Furthermore, since the high-voltage LED device is subsequently electrically connected by flip-chip, the light-emitting direction is emitted toward the substrate 2, and therefore, the conductive layers 5 are made of opaque metal or light-transmitting. The composition of the metal oxide does not affect the light-emitting effect.

The extension electrode unit 6 has a first extension electrode 61 extending upward from the second electrode 325 of one of the second illumination units 32, and a second extension extending upward from the first electrode 324 of the other second illumination unit 32. Electrode 62. In detail, the extension electrode unit 6 is for external electrical connection. Therefore, in order to facilitate the alignment convenience of the subsequent external electrical connection, the area of the first and second extension electrodes 61, 62 can be made larger than the first Two electrodes 324, 325 for easier alignment.

The second insulating layer 7 is located between the first and second extending electrodes 61 and 62 and covers the surface of the light emitting module 3 and the conductive layers 5 . The second insulating layer 7 is selected from insulating materials such as epoxy resin, cerium oxide, and polymer, and may be the same or different from the constituent materials of the first insulating layer 4.

The present invention utilizes a plurality of first and second light emitting units 31 and 32 directly formed on the substrate 2, and is formed by electrically connecting the first and second light emitting units 31 and 32 to each other in series by a plurality of conductive layers 5. Loop, and get a high voltage LED lighting device. The first and second extension electrodes 61 and 62 are electrically connected to each other by the first electrode 324 and the second electrode 325 of the two second illumination units 32 respectively from the start and the final positions of the series circuit. Therefore, when the high-voltage LED light-emitting device is to be electrically connected to the outside, the first and second extension electrodes 61 and 62 can be used to electrically connect the high-voltage LED light-emitting device to the external connection, thereby avoiding the light-emitting direction ( The problem of the light shielding of the electrodes in the direction indicated by the arrow in Fig. 3 can effectively reduce the problem of alignment, and can be more convenient for application.

Referring to FIG. 4, in order to enable the high-voltage LED lighting device to have better luminous performance, the high-voltage LED lighting device may further include a first and second extending electrodes formed on the surface of the second insulating layer 7 61, 62 contact reflective layer 8, the reflective layer 8 is selected from a metal with good reflectivity for reflecting light traveling toward the reflective layer 8 to increase the luminous efficiency of the high voltage LED light emitting device.

Referring to FIG. 5, it is to be noted that the preferred embodiment of the present invention can further roughen the back surface 22 of the substrate 2 to form a roughened microstructure 23, which can be assisted by the roughened microstructure 23. The light emitted by the light-emitting module 3 is emitted outward by the refraction after contacting the roughened microstructure 23, thereby increasing the light extraction rate of the high-voltage LED light-emitting device.

In addition, referring to FIG. 6, the preferred embodiment of the present invention can further remove the substrate 2 by laser stripping, as shown in FIG. 6. The high-voltage LED light-emitting device, according to which the light emitted from the light-emitting module 3 can be directly emitted, and the light loss caused by the light passing through the substrate 2 can be further reduced; further, the substrate can be further removed. The surface of the first type semiconductor layers 311 and 321 exposed after 2 is roughened to form a roughened structure (not shown), and the roughened structure can further assist in lifting the light extraction of the high voltage LED light emitting device. rate.

In summary, the present invention utilizes a plurality of first and second light emitting units 31 and 32 directly formed on the substrate 2, and the first and second light emitting units 31 and 32 are connected in series with each other by the conductive layer 5 by using a structural design. Electrically coupled to obtain a high voltage LED module, the high voltage LED module can be externally connected by the extension electrode unit 6, which not only avoids the problem of electrode shading, but also effectively reduces the problem of alignment, so it is true The object of the invention can be achieved.

The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.

2‧‧‧Substrate

21‧‧‧ surface

22‧‧‧ Back

3‧‧‧Lighting module

31‧‧‧First lighting unit

311‧‧‧First type semiconductor layer

312‧‧‧Lighting layer

313‧‧‧Second type semiconductor layer

314‧‧‧First electrode

315‧‧‧second electrode

32‧‧‧second lighting unit

321‧‧‧First type semiconductor layer

322‧‧‧Lighting layer

323‧‧‧Second type semiconductor layer

324‧‧‧First electrode

325‧‧‧second electrode

4‧‧‧First insulation

5‧‧‧ Conductive layer

6‧‧‧Extended electrode unit

61‧‧‧First extension electrode

62‧‧‧Second extension electrode

7‧‧‧Second insulation

Claims (8)

A high-voltage LED light-emitting device includes: a substrate having a surface opposite to each other and a bottom surface; and a light-emitting module having a plurality of first light-emitting units and two second light-emitting units, the two second light-emitting units The first and second light emitting units are spaced apart from each other, and are disposed at intervals on the surface of the substrate, wherein each of the first and second light emitting units has a first shape formed upward from the surface of the substrate. a semiconductor layer, a light emitting layer, a second type semiconductor, and first and second electrodes respectively formed on a part of the surface of the first and second type semiconductor layers; and a plurality of first insulating layers respectively located at the first a gap between the two light emitting units; a plurality of conductive layers, each of the conductive layers spanning a surface of the first insulating layer between the adjacent first light emitting unit and the first and second light emitting units, and one of the light emitting units The first electrode is electrically connected to the second electrode of the other light emitting unit, and the conductive layers are not in contact with each other; and one extended electrode unit has the first one from the second light emitting unit a first extending electrode extending in a pole direction, and a second extending electrode extending upward from a second electrode of the other second light emitting unit; and a second insulating layer between the first and second extending electrodes, covering The light emitting module and the surface of the conductive layers. The high voltage LED device of claim 1, further comprising a reflection formed on the surface of the second insulating layer and not in contact with the first and second extension electrodes Floor. The high voltage LED device of claim 1, wherein the back side of the substrate further has a roughened microstructure. A high-voltage LED light-emitting device includes: a light-emitting module having a plurality of first light-emitting units, two second light-emitting units, and an insulating unit connecting the first and second light-emitting units, the two second light-emitting units The first and second light emitting units are disposed at a gap between each other, and the insulating unit has a plurality of gaps formed between the light emitting units for making the first and second a first insulating layer in which the light emitting units are connected to each other but not in contact, and each of the light emitting units has a first type semiconductor layer, a light emitting layer, a second type semiconductor stacked from bottom to top, and are respectively formed on the first First and second electrodes of a portion of the surface of the semiconductor layer and the second type semiconductor layer; a plurality of conductive layers, each of the conductive layers spanning between the adjacent first light emitting unit or the first and second light emitting units a first insulating layer surface, wherein a first electrode of one of the light emitting units is electrically connected to a second electrode of the other light emitting unit, and the conductive layers are not in contact with each other; a second insulating layer, the second insulating layer The layer is transparent to cover the surface of the light emitting module and the conductive layer; and an extended electrode unit having a first extended electrode extending from the first electrode of one of the second light emitting units; and one from the other a second extension electrode of the second electrode of the second light emitting unit. The high voltage LED device of claim 4, wherein the first and second The extension electrodes extend from the first and second electrodes away from the substrate, and the second insulation layer is interposed between the first and second extension electrodes. The high voltage LED device of claim 5, further comprising a reflective layer formed on the surface of the second insulating layer and not in contact with the first and second extension electrodes. The high voltage LED device of claim 4, further comprising a metal reflective layer covering the surface of the second insulating layer, and an electrode layer formed on the surface of the metal reflective layer, wherein the first extended electrode is oriented The back surface of the substrate extends, and the second extension electrode extends from the second electrode and is electrically connected to the metal reflective layer. The high voltage LED device of claim 4, wherein the exposed surface of the first type semiconductor layer of the first and second light emitting units has a roughened microstructure.