TWI534083B - 載體或支撐體矽石的粗粒子 - Google Patents
載體或支撐體矽石的粗粒子 Download PDFInfo
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- TWI534083B TWI534083B TW100109566A TW100109566A TWI534083B TW I534083 B TWI534083 B TW I534083B TW 100109566 A TW100109566 A TW 100109566A TW 100109566 A TW100109566 A TW 100109566A TW I534083 B TWI534083 B TW I534083B
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- Taiwan
- Prior art keywords
- vermiculite
- absorbent
- particulate
- particles
- weight
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
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- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
- B01J21/08—Silica
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
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- C—CHEMISTRY; METALLURGY
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
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- Silicon Compounds (AREA)
- Cosmetics (AREA)
- Fodder In General (AREA)
- General Preparation And Processing Of Foods (AREA)
- Medicinal Preparation (AREA)
- Catching Or Destruction (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
- Silicon Polymers (AREA)
Description
本發明係關於用作載體材料,尤其是用於不同反應器系統之觸媒支撐體的新穎顆粒矽石,以及關於彼之製造及用途。
在許多應用領域當中,例如在農作物保護之產物部門、在活性藥學成分之情況、在動物飼料及動物飼料添加劑之製造或在食品工業中,載體材料係用於將例如液態活性成分或樹脂活性成分轉化成自由流動及具貯存安定性形式。為製造該固態調配物,將液態或可熔物質或物質混合物施加於載體材料,在某些情況下與助劑(例如界面活性劑及崩解劑)一起施加。在固態物質之情況下,該等載體材料主要用作填料,然而在液態或低熔點物質之情況下,該等載體材料吸收液體。此應提供容易處理之向外乾燥吸收物,然後該等吸收物係直接呈粉末形式(WP,習知為可濕性粉末)或如顆粒/擠壓物之經進一步處理形式(WG,水可分散顆粒)在例如農業化學部分中銷售。若特定應用需要,可將該被吸收溶液乾燥,或可將該被吸收熔體固化。通常,提出經裝載之載體材料。
對載體材料之顯著需求係充分高吸收率,如此需要使用之載體材料儘可能較少。因此,一系列專利申請案(例如DE102006002765)係有關增加載體材料上被吸收材料之含量的方法。然而,該等方法的表現非常複雜,且彼等迄今仍未以工業規模確立。
對於載體材料之其他需求係具有良好自由流動及因此具有良好加工性之吸收物。此外,於運送、分配及吸收物製造期間,矽石應具有最小成塵程度。為改善自由流動,例如EP 0984772 B1及EP 0966207 B1因而提出使用具有大約球形且平均粒子大小大於150 μm之微顆粒矽石作為載體材料。雖然以此種方式獲得之吸收物具有改善之自由流動性,但由於在使用該等矽石製造吸收物當中經常觀察到混合機中之結塊並必須將之移除(有時係以成本高昂且不方使之方式移除),該等矽石之處理性質並非最佳。
在固定床催化領域中,對於載體或支撐體材料有進一步其他需求。例如,必須確保固定床反應器中之反應,於該固定床反應器中,反應物流經填充有已施加觸媒之經裝載支撐體材料的反應室以產生最小之反應室壓降。在裝載觸媒之支撐體材料係懸浮在反應介質之反應情況下,該支撐體材料必須於反應結束時容易再次移除。最後,流體化床反應器中之反應需要該經裝載之支撐體材料可於其中有效率流體化。因此很明顯的是不同反應器類型對於經裝載之支撐體的需求相當不同,因此對於支撐體材料之需求亦相當不同。迄今,研究工作已實質上聚焦在如上述所示之載體材料的吸收率或其加工性。目前針對催化程序中特定需求仍無令人滿意的支撐體材料。
因此,仍相當需要具有良好加工性、容許製造具有良好自由流動性之高度裝載的吸收物,及額外具有用於催化程序之良好適用性的便宜載體或支撐體材料。
應暸解吸收物意指直接使用或於分散液、溶液或於熔體中裝載有活性物質或活性物質混合物的載體或支撐體矽石。除了該活性物質或活性物質混合物之外,亦可能載有助劑或賦形劑。載於該載體或支撐體矽石之物質於此處亦稱被吸收物質。
因此,本發明目的係提出新穎顆粒矽石,若該顆粒矽石具有先前技術載體或支撐體材料的至少某些缺點的話,其僅具有較輕微程度之該等缺點,且容許製造具有經改良性能性質的新穎經裝載之載體或支撐體。此外,應提出製造該等顆粒矽石或製造該等經裝載之載體或支撐體的方法。
本發明之特定目的係提出容許製造裝載有觸媒且非常容易從懸浮液移除之支撐體的顆粒矽石。
本發明另一特定目的係提出容許製造已裝載觸媒且於反應混合物流過固定床反應器時造成固定床反應器最小程度壓降之顆粒矽石。
該等目的及未明確陳述之其他目的係藉由申請專利範圍、發明及實施例中所詳細界定之顆粒矽石、經裝載之載體或支撐體及製造方法獲致。
已意外發現,由於如EP 0984772 B1及EP 0966207 B1所述之球形且平均粒子大小大於150 μm的支撐體材料在固定床反應中尚未獲致令人滿意的結果,使用該等支撐體材料不足以製造吸收物。
本發明人藉由深入研究已發現支撐體材料必須符合的基本標準係其對於機械應力的安定性。當支撐體材料太軟時,在該混合機中於支撐體材料上的應力可導致結塊。此外,在進一步處理經裝載之支撐體材料的過程及在填充反應器期間,一部分該支撐體材料可能被粉碎且形成之粉末可能阻塞該反應器,造成該反應器中之壓降增加。
亦習知若該等支撐體材料不夠硬,則當流體流過該反應器中之經裝載之支撐體時可發生磨蝕現象;此點可明顯解釋固定床反應器之運轉操作中的壓降及經懸浮觸媒之區域中的過濾問題。
最後,已發現該等支撐體材料之粒子必須具有特定粒子大小分布以在固定床反應器或在流體化床反應器中造成最小流動阻力。
可能藉由特定製造方法加強本發明顆粒矽石之硬度,以使彼等在吸收物製造、吸收物處理及反應器操作中明顯更能承受機械應力,因此具有顯著經改良之性能性質。此外,粒子大小分布經改良,及確保該經硬化顆粒矽石具有充分高孔隙度。因此,本發明顆粒矽石值得注意的是充分高孔隙度(以Hg孔隙容積表示)、安定性更佳之孔壁(以未經超音波處理之平均粒子大小(d50)對曝露於超音波3分鐘後之平均粒子大小(d50U)的比表示),及最佳粒子大小(以描述細料部分之dQ3=10%及描述粗粒部分之dQ3=90%表示)。換言之,獲致機械安定性提高,同時獲得具有最佳粒子大小分布之高吸收率。
在較佳具體實例中,本發明矽石具有大約中性之pH,以使得彼等可非常通用地作為載體或支撐體,且不會對被吸收之材料的貯存安定性造成任何負面影響。
此外,相較於商業使用之載體或支撐體矽石(例如得自Rhodia Chimie之Zeosil 165 GR或得自Huber Corp.之Zeodent DP-9175),本發明矽石具有最佳硬度比(即,機械安定性)、有關細料及粗粒部分之粒子大小分布及吸收率。
因此本發明提出具有以下性質之顆粒矽石:
-Hg孔隙容積(<4μm)大於0.90 ml/g
- dQ3=10%大於400 μm,同時dQ3=90%小於3000 μm,且
- 末曝露於超音波之d50對曝露於超音波3分鐘後之d50的比<4.00。此測量係對400至500 μm之粒子部分進行。
本發明進一步提出除上述參數之外具有至少一種以下性質的顆粒矽石:
-pH為5至8.5
- 未曝露於超音波之d50對曝露於超音波3分鐘後之d50的比為1.00至3.00,較佳為1.00至2.60,更佳為1.00至2.10,尤佳為1.00至1.60。此測量係對400至500 μm之粒子部分進行。
本發明另外提出製造本發明顆粒矽石之第一方法,其包括以下步驟:
a)提供呈經乾燥及/或經研磨形式之沉澱矽石或焰製矽石,其
- 未經超音波處理之平均粒子大小d50為0.1至350 μm,
- BET表面積為30至800 m2/g,且
- DBP數為140至400 g/100 g;
b)根據所用成形法將得自步驟a)之矽石濕潤至乾燥損失為30-80重量%;
c)藉由擠壓、粒化、壓實或其他慣用成形法將得自步驟b)之矽石成形;
d)在適用之乾燥單元中乾燥該成形之矽石體;及
e)以3000 μm之篩大小過篩粒化或過篩顆粒且以400 μm之篩目大小篩除細料。
除上述本發明第一方法之外,亦可能使用乾燥損失為30-80重量%之含水濾餅作為步驟c)之起始材料。
本發明另外提出製造本發明顆粒矽石之第二方法,其包括以下步驟:
i)提供呈經乾燥及/或經研磨形式之沉澱矽石或焰製矽石,其乾燥損失<30重量%,且
- 未經超音波處理之平均粒子大小d50為0.1至350 μm,
- BET表面積為30至800 m2/g,且
- DBP數為140至400 g/100 g;
ii)藉由乾式壓實將得自步驟i)之矽石成形,較佳在兩個旋轉輥之間,以0.5 kN/cm輥寬至12 kN/cm輥寬之比接觸壓力實施,以產生壓塊,及
iii)以3000 μm之篩大小過篩粒化或過篩壓塊且以400 μm之篩目大小篩除細料。
在上述本發明所有方法中,可能藉由以升高溫度(例如70℃至400℃)之水蒸氣處理粒子而進一步加強該等粒子之硬度。之後,可能有必要進行進一步乾燥步驟。
此外,可能藉由將該等粒子與鹼性物質接觸一段特定時間以使該等粒子的pH升高來加強該等粒子的硬度。該方法更詳細描述於DE 102008035867 A1。
加強該等粒子之硬度的另一手段包括在升高溫度(通常介於700℃與1200℃之間)煅燒該等粒子一段特定時間(通常<1小時)。
上述硬化該等粒子的處理步驟可在過篩粒化及過篩之處理步驟之前或之後進行。
本發明第一方法的濕潤及/或粒化處理步驟可在高速強力混合機、捏合機、壓實機、盤式造粒機及/或沖孔模壓機等中進行。或者,該濕潤作用之後可接著進行擠壓,或可直接擠壓含水濾餅。經擠壓之成形體接著可藉由其他適用方法(例如來自Caleva之搓圓法)而改變幾何形狀。
本發明第一方法之乾燥處理步驟可在例如乾燥箱、流體化床乾燥器、帶式乾燥器等當中進行。若必要,該經乾燥之成形體隨後可藉由其他方法調整至適當粒子大小部分,例如以3000 μm之篩大小過篩或過篩粒化且以400 μm之篩目大小篩除細料部分。
本發明第二方法之成形步驟較佳係在壓實機中進行,例如在得自Hosokawa Bepex GmbH之裝置(諸如Bepex L200/50或Alexanderwerk AG)中進行。
本發明兩種方法之過篩粒化較佳係在諸如得自Frewitt或Hosokawa Bepex GmbH之篩磨機的裝置中進行。該過篩係使用所有習知技術進行,較佳係使用得自諸如Vibra、Engelsmann或Allgeier等公司之振動篩。可能進行數個過篩步驟或數個過篩步驟。
本發明進行提出本發明矽石作為載體材料的用途,較佳係作為觸媒之支撐體材料的用途。
本發明最後提出包含至少一種本發明之矽石的吸收物。
本發明主題茲於下文詳細說明。在本發明內容中,同義使用「矽石」、「沉澱矽石」及「焰製矽石」等術語。
充分高孔隙度確使本發明顆粒矽石具有在中孔及/或巨孔範圍之充足孔隙容積,因此確使觸媒對反應物而言具有良好可及性,同時製造本發明吸收物所需之支撐體材料為最少數量。因此本發明顆粒矽石之Hg孔隙容積(<4 μm)大於0.90 ml/g,較佳為大於1.35 ml/g,更佳為大於1.60,又更佳為大於1.80,尤佳為大於1.90。
更佳之本發明顆粒矽石的Hg孔隙容積(<4 μm)為0.9至1.34 ml/g,更佳為0.9 ml/g至1.30 ml/g,更佳為0.9 ml/g至1.20 ml/g。
本發明顆粒矽石之另一重要性質為其硬度。當孔隙度高時,可能為無法再確保機械安定性之情況,此可導致矽石及由彼製成之吸收物在機械應力下時細料之形成增加。藉由超音波對懸浮於水中之矽石作用3分鐘來模擬在裝填及運送該矽石製程中、在製造吸收物過程中,及在經裝載之支撐體材料的孔隙度過程中之機械應力。未曝露於超音波之d50對曝露於超音波3分鐘後之d50的比提供d50因該機械應力而減少之幅度的資訊。該矽石愈硬,曝露於超音波後之d50U與未曝露於超音波之d50之間的差異愈小,即,在理想情況下,未曝露於超音波之d50對曝露於超音波3分鐘後之d50U的比為1.00。本發明顆粒矽石雖然平均粒子大小大,但其具有非常良好之硬度,如此未曝露於超音波之d50U對曝露於超音波3分鐘後之d50的比小於3.00,較佳為小於2.60,更佳為小於2.10,尤佳為小於1.60。此測量係對400 μm至500 μm之粒子部分進行。
該粒子大小分布(以dQ3=10%及dQ3=90%表示特徵)對於確保固定床反應器中之良好流動性質或確保流體化床反應器中之良好流體化性質相當重要。過大粒子不具供反應、溶解及擴散用之充足比表面積。而過小粒子會提高流動阻力。因此本發明顆粒矽石之dQ3=10%為>400 μm且dQ3=90%<3000 μm。
本發明顆粒矽石較佳係具有5至8.5範圍內之pH。由於過度酸性或過度鹼性基底支撐體材料可觸發或加速分解或待吸收液體中之其他化學轉化,故此實質上為中性pH之矽石確保關於待吸收液體之廣泛應用範圍。
就載體或支撐體應用而言,本發明方法中可使用許多市面之矽石。其實例為得自Evonik Degussa GmbH之矽石SIPERNAT 50、SIPERNAT 50S、500LS、22、SIPERNAT 22S、SIPERNAT 22 LS及SIPERNAT 33。如本發明人所發現,該等矽石即使已特別針對載體或支撐體應用開發,但其本身不適於或不足以適於作為催化程序領域中之支撐體材料。其原因(尤其是在噴霧乾燥、噴嘴塔乾燥及1或經研磨粒子之情況中)係其粒子大小過小,如上述,此可導致反應器中之不要的壓力上升。藉由本發明方法,進行矽石之壓實,該粒子大小及藉此所獲得之粒子強度係藉由本發明方法控制,以獲得具有最佳粒子大小分布及硬度之粒子,其於反應器中之流動阻力低或可容易從懸浮液濾出。
除已提及之矽石以外,本發明第一方法之步驟a)中,可能使用例如得自Evonik Degussa GmbH之SIPERNAT 2200、Aerosil 200;得自Rhodia Chimie之Tixosil 38 A至X;得自PPG之HiSil SC 60及HiSil SC 72;得自Huber之Hubersil 5170等矽石;及歐洲專利EP 0984772 B1、EP 0966207 B1及EP 0937755 A1中所揭示之矽石。
本發明方法中所使用之矽石具有以下性質:
- 未經超音波處理之平均粒子大小d50為0.1至350 μm,較佳為0.1至200 μm,更佳為0.1至150 μm,最佳為1至50 μm;
- BET表面積為30至800 m2/g,較佳為40至700 m2/g,更佳為50至600 m2/g,最佳為150至550 m2/g;
- DBP數為140至400 g/(100 g),較佳為140至350 g/(100 g),更佳為190至350 g/(100 g),最佳為290至350 g/(100 g)。
本發明第一方法較佳係在混合機、捏合機或壓實機(隨意地具有下游擠壓機)及下游乾燥器、過篩造粒機及篩中進行。例如,可能先以液體濕潤最初裝填之矽石,例如在得自Eirich GmbH之裝置中(除非直接使用濾餅),然後壓縮或壓實該矽石,然後擠壓且乾燥之。同樣可能乾燥該經液體濕潤且經壓縮或壓實之矽石,然後進行過篩粒化,之後將之過篩成所希望之粒子部分。
最終載體或支撐體粒子的硬度可藉由估量該起始矽石之壓縮或壓實而予以控制。壓實作用通常係藉由添加水同時引入剪切能來進行。此外,亦可能加入適於作為粒子間之黏合劑的水溶液(諸如纖維素溶液)或油。以1.00 g/ml之密度計,該液體較佳係以50至90重量%之比例,更佳為60至90重量%之比例,最佳為65至90重量%之比例添加。此外,於壓實期間,可能添加適於作為粒子間之黏合劑的固體,例如纖維素、蠟或聚合物,或隨後經聚合之單體。該固體係以0.1至50重量%之比例,較佳為0.5至15重量%之比例,更佳為介於0.5與8重量%之比例添加。
在較佳具體實例中,載體或支撐體材料係在不添加黏合劑之情況下被壓縮或壓實。
該壓實作用較佳係在10℃至90℃,更佳為10℃至70℃之溫度下操作。
本發明第一方法中之成形較佳係借助於添加之液體徹底壓實該混合單元中之起始矽石,直到液體部分排出,且粒子開始粒化為止。可藉由擠壓步驟均化如此獲得之顆粒(原顆粒)的粒子大小,然後可將之乾燥。此外,在省略擠壓步驟時,亦可直接乾燥該潮濕原顆粒,例如使之通過具有3000 μm特徵大小的篩,其使大於該特徵篩大小的粒子粉碎。該通過較佳係在諸如得自Frewitt或Hosokawa Bepex GmbH之篩磨機的裝置中進行。在本發明支撐體材料用於懸浮催化領域之情況下,大於該通過篩之特徵大小的粒子可導致不要的吸收物沉降,並造成長擴散時間或長反應時間。當所有小於400 μm之過篩部分被移除時更為有利。如上述,該等小粒子對於粒子的流動阻力有負面影響,且導致固定床反應器中之壓降。
該過篩係使用所有習知技術進行,較佳係使用得自如Vibra、Engelsmann或Allgeier等公司之振動篩。可能進行數個過篩步驟或數個過篩步驟。
在本發明方法之第二種情況下,矽石之壓實較佳係在具有下游過篩造粒機及篩的乾式壓實機中進行,換言之,先例如在得自Hosokawa Bepex GmbH之裝置(諸如Bepex L200/50)或得自Alexanderwerk AG之裝置中將最初裝填之矽石壓實,然後將經壓實之材料分成所希望之粒子部分。
本發明第二方法之步驟ii)中,該乾燥起始矽石係被壓實,即壓成壓塊,其粒子大小及硬度最適用於本發明應用。該硬度可藉由壓實該起始矽石的壓力控制。該壓實作用較佳係在0.5至15 kN/cm之輥寬,更佳為3至12 kN/cm之輥寬,最佳為6至10 kN/cm之輥寬之比接觸壓力下,且在10℃至90℃,更佳為10℃至70℃之溫度下進行。此外,於壓實期間,可能添加液體,較佳為適於作為粒子間之黏合劑的水、水溶液(諸如纖維素溶液)或油。該液體較佳係以1至30重量%之比例,更佳為1至20重量%之比例,最佳為3至15重量%之比例添加。此外,於壓實期間,可能添加適於作為粒子間之黏合劑的固體,例如纖維素、蠟或聚合物,或隨後經聚合之單體。該固體係以0.1至50重量%之比例,較佳為0.5至15重量%之比例,更佳為介於0.5與8重量%之比例添加。
該乾式壓實較佳係以在介於兩個旋轉輥之間的壓實單元中壓製該乾燥起始矽石之方式進行,其中至少一輥較佳係具有凹陷(諸如凹紋、凹處或墊),其特徵大小大於欲獲得之粒子的大小。該等輥為筆直或凹面構造。又特佳之具體實例包括使用至少一個沖孔齒狀輪輥。此外,當至少一個輥係構造成可在輥表面產生減壓時可能較有利,藉由該輥壓實之矽石被吸於該輥上。可使用熟悉本技術之人士習知的所有輸送構件將該矽石供應至該壓實單元,該等輸送構件係例如輸送螺桿、雙螺桿等。
壓實之後,將獲得之壓塊通過特徵大小為3000 μm之篩,該過程中,大於該特徵篩大小的粒子被粉碎。該通過較佳係在諸如得自Frewitt或Hosokawa Bepex GmbH之篩磨機的裝置中進行。當本發明支撐體材料用於懸浮催化領域時,大於該通過篩之特徵大小的粒子可導致不要的吸收物沉降,並造成長擴散時間或長反應時間。此外,小於400 μm之過篩部分係被移除。如上述,該等小粒子對於粒子床的流動阻力有負面影響,且導致固定床反應器中之壓降。
對完成之乾燥顆粒之可能水蒸氣處理可在所有適於本目的之裝置中完成,該等裝置之實例為帶式乾燥器、旋轉管式乾燥器、乾燥箱、流體化床乾燥器等。該等顆粒係曝露於70℃-400℃,較佳為80℃-300℃,更佳為90℃-200℃,最佳為106℃-180℃之溫度。於該溫度之滯留時間至多達16小時,較佳為至多達12小時,更佳為至多達8小時,最佳為至多達4小時。
該等粒子之可能煅燒可在不同裝置中進行,例如煅燒爐、帶式或旋轉管式煅燒器,或閃蒸或流體化床煅燒器。此涉及將該等顆粒曝露於700℃-1200℃,較佳為800℃-1200℃,更佳為800℃-1100℃之溫度。該滯留時間係視煅燒溫度及所希望之粒子硬度而定。該方法中之滯留時間為1小時,較佳為20分鐘,更佳為少於10分鐘。
本發明之顆粒矽石可用以製造吸收物,被吸收物質較佳為硬化劑或起始劑、交聯劑、觸媒、活性藥學成分及賦形劑、活性化妝成分及賦形劑、清潔及/或保養組成物、調味料、芳香物質及芳香劑、動物飼料或動物飼料添加劑,例如胺基酸、維他命、礦物質、食品或食品添加劑、染料及/或顏料、胺基酸、氧化劑或漂白劑、具有殺微生物(尤其是殺真菌或殺菌)作用之添加劑、農業及林業用之化學品,及/或混凝土摻合物。被吸收在該載體上的材料可為活性或非活性液體,例如油、樹脂、溶液、分散液、懸浮液、乳液、蠟、聚合物或熔體。該等被吸收物質可隨後經熱處理、加熱處理或引發結晶,以固體、分離或反應。此外,該等被吸收物質可在事先或之後被乾燥。
在動物飼料及動物飼料添加劑部門中之吸收物包括例如維他命、礦物質、羧酸、無機酸、胺基酸、脂肪、油及芳香物質。該等吸收物更佳為甲酸、乙酸、丙酸、乳酸、磷酸、氯化膽鹼溶液、醋酸維他命E及植物萃取物,例如萬壽菊萃取物。
農業及林業部門中之吸收物包括例如被吸收之肥料,例如含硝酸鹽及/或含磷酸鹽之肥料、農作物保護組成物、農藥,例如除草劑、殺真菌劑、殺蟲劑。
化妝產物部門中之吸收物包括例如油,諸如精油、香料油(perfume oils)、保養油、香精油(fragrance oils)及聚矽氧油、活性抗菌成分、抗病毒成分或殺真菌成分;消毒物質及抗微生物物質;除臭劑;抗氧化劑;生物活性物質(biologically active substances)及生物活性成分(biogenic active ingredients);維他命及維他命錯合物;酶及酶系統,諸如澱粉酶、織維素酶、脂肪酶及蛋白酶;化妝活性物質,諸如化妝品及個人衛生產品之成分;清洗活性或清潔活性物質,諸如所有種類之界面活性劑、清洗活性或清潔活性無機及有機酸、拒污性及污垢脫離活性成分、氧化劑及漂白劑、漂白活化劑、增滌劑及輔助增滌劑、抗再沉積添加劑、灰化及褪色抑制劑、色彩保護之活性物質、洗衣保養之物質及添加劑、光學增亮劑、泡沫抑制劑、pH改質劑及pH緩衝物質。
食品及食品添加劑部門中之吸收物包括例如被吸收之芳香物質、食品補充劑、維他命、礦物質、胺基酸。
來自活性藥學成分之吸收物包括所有種類之活性藥學成分,例如a-蛋白酶抑制劑、阿布卡韋(abacavir)、阿夕邁(abciximab)、阿卡博斯(acarbose)、乙醯水楊酸、阿塞韋(acyclovir)、腺苷酸、阿布帖醇(albuterol)、阿地白血球殺菌素(aldesleukin)、阿倫卓酸鹽(alendronate)、阿富若辛(alfuzosin)、阿洛司瓊(alosetron)、三氮二氮平、阿替普酶(alteplase)、安布索(ambroxol)、阿米福汀(amifostine)、胺碘酮(amiodarone)、阿米舒必利(amisulpride)、安洛地平(amlodipine)、阿莫西林(amoxycillin)、安非他命、抗黴酮、安比西林(ampicillin)、安普瑞那韋(amprenavir)、阿那格雷(anagrelide)、阿那曲唑(anastrozole)、似凝血脢(ancrod)、抗血友病因子、抑肽酶(aprotinin)、阿廷諾(atenolol)、阿托法史坦酊(atorvastatin)、阿托品、阿茲拉斯汀(azelastine)、亞茲索黴素(azithromycin)、薁、巴尼地平(barnidipine)、貝可皮質醇(beclomethasone)、苯那普利(benazepril)、苯絲肼(benserazide)、貝拉司特(beraprost)、貝皮質醇(betamethasone)、貝特舒洛(betaxolol)、倍脂利(bezafibrate)、比卡鲁胺(bicalutamide)、甜沒藥醇、必舒普洛(bisoprolol)、肉毒桿菌毒素、溴莫尼定(brimonidine)、溴西泮(bromazepam)、溴麥角克普汀(bromocriptine)、亞丁皮質醇(budesonide)、佈匹卡因(bupivacaine)、布普洛皮翁(bupropion)、丁螺環酮(buspirone)、布托啡諾(butorphanol)、卡麥角林(cabergoline)、鈣伯三醇(calcipotriene)、降血鈣素、鈣化三醇、樟腦、坎地沙坦(candesartan)、坎地沙坦西酯(candesartan cilexetil)、卡特普(captopril)、卡巴氮平(carbamazepine)、卡比度巴(carbidopa)、卡鉑定(carboplatin)、卡菲蒂羅(carvedilol)、頭孢可若(cefaclor)、頭孢卓西(cefadroxil)、頭孢西汀(cefaxitin)、頭孢若林(cefazolin)、頭孢地尼(cefdinir)、頭孢吡肟(cefepime)、希復欣敏(cefixime)、西福每他唑(cefmetazole)、頭孢匹拉腙(cefoperazone)、頭孢替安(cefotiam)、頭孢索蘭(cefoxopran)、頭孢泊辛(cefpodoxime)、頭孢羅齊(cefprozil)、頭孢他汀(ceftazidime)、頭孢替布吩(ceftibuten)、頭孢克松(ceftriaxone)、頭孢福辛(cefuroxime)、塞來可昔(celecoxib)、塞利普洛(celiprolol)、頭孢力欣(cephalexin)、薛利伐史他汀(cerivastatin)、西替利嗪(cetirizine)、氯黴素、西拉司汀(cilastatin)、西拉普利(cilazapril)、希美替定(cimetidine)、西洛非貝(ciprofibrate)、塞普沙星(ciprofloxacin)、希塞菩(cisapride)、二氯二氨鉑(cisplatin)、西太普蘭(citalopram)、克拉黴素(clarithromycin)、棒酸(clavulanic acid)、克林達黴素(clindamycin)、氯米帕明(clomipramine)、氯硝西泮(clonazepam)、可尼丁(clonidine)、克洛平格(clopidogrel)、克氯黴唑(clotrimazole)、氯氮平(clozapine)、克熱寧(cromolyn)、環磷醯胺、環孢素、環妊酮(cyproterone)、達肝素(dalteparin)、鉗鐵羥醯胺(deferoxamine)、去氧孕烯(desogestrel)、右旋安非他命、二氮平(diazepam)、待克菲那(diclofenac)、地丹諾辛(didanosine)、毛地黃毒素、長葉毛地黃苷、二氫麥角胺、迪太贊(diltiazem)、白喉蛋白、白喉類毒素、戴弗普斯(divalproex)、多巴酚丁胺(dobutamine)、多西他賽(docetaxel)、多拉司瓊(dolasetron)、多奈派齊(donepezil)、去氧核醣酶-α、杜塞醯胺(dorzolamide)、多薩坐辛(doxazosin)、5'-去氧-5-氟尿苷、杜薩魯比辛(doxorubicin)、地屈孕酮(dydrogesterone)、依卡倍特(ecabet)、依伐韋侖(efavirenz)、伊那拉普利(enalapril)、伊諾肝素(enoxaparin)、伊派立松(eperisone)、伊皮那斯汀(epinastine)、依畢魯比辛(epirubicin)、依替巴肽(eptifibatide)、紅血球生成素-α、紅血球生成素-β、伊坦那賽(etanercept)、乙炔雌二醇、艾特多雷克(etodolac)、依妥普賽(etoposide)、第八凝血因子、泛昔洛韋(famciclovir)、啡莫替定(famotidine)、法羅培南(faropenem)、費落地平(felodipine)、吩諾菲布(fenofibrate)、吩諾多泮(fenoldopam)、吩坦尼(fentanyl)、非索吩那定(fexofenadine)、非格司定(filgrastim)、菲斯坦(finasteride)、彿洛莫索(flomoxef)、氟康唑(fluconazole)、福達樂(fludarabine)、氟尼縮松(flunisolide)、氟硝西泮(flunitrazepam)、氟希汀(fluoxetine)、氟塔醯胺(flutamide)、氟替皮質酮(fluticasone)、氟伐他汀(fluvastatin)、氟伍洒胺(fluvoxamine)、促濾泡素-α、促濾泡素-β、福莫特羅(formoterol)、福辛普利(fosinopril)、弗西邁(furosemide)、加巴潘定(gabapentin)、釓二醯胺(gadodiamide)、更西洛韋(ganciclovir)、加替沙星(gatifloxacin)、吉西他並(gemcitabine)、吉多丁(gestodene)、格拉替雷莫(glatiramer)、格力本(glibenclamide)、克美吡若(glimepiride)、克吡噻(glipizide)、甘布若(glyburide)、戈舍瑞林(goserelin)、格拉司瓊(granisetron)、灰黴素(griseofulvin)、B型肝炎抗原、玻尿酸、海可辛(hycosin)、氫氯苯噻噠嗪、氫可酮(hydrocodone)、氫皮質酮、氫嗎啡酮、羥基氯喹(hydroxychloroquine)、海蘭G-F 20(hylan G-F 20)、異布洛芬(ibuprofen)、依弗醯胺(ifosfamide)、依米普利(imidapril)、依米苷酶(imiglucerase)、依米培南(imipenem)、免疫球蛋白、茚地那韋(indinavir)、吲哚美洒星(indomethacin)、英夫利西邁(infliximab)、胰島素、人類胰島素、胰島素Lispro、胰島素Aspart、β干擾素、α干擾素、碘-125、碘克沙醇(iodixanol)、碘六醇(iohexol)、碘美普爾(iomeprol)、碘巴醯胺(iopromide)、碘佛醇(ioversol)、碘索普林(ioxoprolene)、異丙托品(ipratropium)、依普黃酮(ipriflavone)、依貝沙坦(irbesartan)、愛萊諾迪肯(irinotecan)、異山梨醇(isosorbide)、異視網酸(isotretinoin)、依拉地平(isradipine)、依曲康唑(itraconazole)、氯卓酸鉀(potassium chlorazepate)、氯化鉀、克妥洛(ketorolac)、酮替吩(ketotifen)、百日咳疫苗、第九凝血因子、拉米夫定(lamivudine)、拉莫三今(lamotrigine)、蘭索拉唑(lansoprazole)、拉坦諾司特(latanoprost)、來氟米得(leflunomide)、來諾格司定(lenograstim)、利妥唑(letrozole)、柳菩林(leuprolide)、左多巴(levodopa)、左氟沙星(levofloxacin)、左諾杰垂(levonorgestrel)、左旋甲狀腺素、利度卡因(lidocaine)、利奈唑(linezolide)、利欣諾普利(lisinopril)、碘帕醇(lopamidol)、羅拉卡倍芙(loracarbef)、羅拉他定(loratadine)、樂耐平(lorazepam)、洛沙坦(losartan)、洛維汀(lovastatin)、離胺酸乙醯水楊酸、曼尼地平(manidipine)、甲鈷胺(mecobalamin)、乙酸甲羥黃體酮、美皆斯妥(megestrol)、美洛昔康(meloxicam)、四烯甲萘醌(menatetrenone)、腦脊髓膜炎疫苗、美諾托品(menotropin)、美洛培南(meropenem)、美沙胺(mesalamine)、美他沙酮(metaxalone)、二甲二胍(metformin)、派醋甲酯(methylphenidate)、甲基培尼皮質醇(methylprednisolone)、美托普洛(metoprolol)、米達卓蘭(midazolam)、米力農(milrinone)、美諾四環素(minocycline)、米達紗賓(mirtazapine)、米索普洛托(misoprostol)、邁杜蔥酮(mitoxantrone)、莫羅醯胺(moclobemide)、莫達非尼(modafinil)、莫美他松(mometasone)、孟盧克司特(montelukast)、莫尼弗邁(morniflumate)、嗎啡鎓(morphium)、莫西洛沙星(moxifloxacin)、黴酚酸(mycophenolate)、萘布敉痛(nabumetone)、那卓肝素(nadroparin)、那普洛辛(naproxen)、那拉曲坦(naratriptan)、奈法坐酮(nefazodone)、內非那韋(nelfinavir)、二吡氮平(nevirapine)、菸鹼酸、尼卡地平(nicardipine)、麥角溴菸鹼酯(nicergoline)、尼菲地平(nifedipine)、尼魯醯胺(nilutamide)、尼伐地平(nilvadipine)、尼摩地平(nimodipine)、硝酸甘油酯、尼咂泰汀(nizatidine)、乙炔類黃體酮(norethindrone)、諾弗沙星(norfloxacin)、奧曲肽(octreotide)、奧蘭咂平(olanzapine)、奧美拉唑(omeprazole)、安坦司瓊(ondansetron)、歐利斯特(orlistat)、奧司他韋(oseltamivir)、雌二醇、雌激素、草酸鉑汀(oxaliplatin)、奧沙普秦(oxaprozin)、歐索林酸(oxolinic acid)、羥布托尼(oxybutynin)、太平洋紫杉醇(paclitaxel)、帕利珠邁(palivizumab)、帕米卓耐特(pamidronate)、臟酶脂酶、帕尼培南(panipenem)、泮托拉唑(pantoprazole)、乙醯胺苯酚(paracetamol)、吡咯希定(paroxetine)、本多非林(pentoxifylline)、帕格萊(pergolide)、苯妥英(phenytoin)、皮利他綜(pioglitazone)、必倍西林(piperacillin)、匹洛西卡(piroxicam)、普拉密索(pramipexole)、普伐他丁(pravastatin)、哌拉唑辛(prazosin)、普布可(probucol)、黃體激素、普帕酚酮(propafenone)、異丙酚(propofol)、普帕西吩(propoxyphene)、前列腺素、喹提平(quetiapin)、喹那普利(quinapril)、雷貝拉唑(rabeprazole)、拉羅西吩(raloxifene)、拉米普利(ramipril)、雷尼替定(ranitidine)、利泊格(repaglinide)、蛇根鹼、利巴韋林(ribavirin)、利鲁唑(riluzole)、利培酮(risperidone)、利托那韋(ritonavir)、利妥昔邁(rituximab)、利伐替明(rivastigmin)、利扎曲坦(rizatriptan)、洛非可西(rofecoxib)、洛匹尼羅(ropinirole)、洛西利他綜(rosiglitazone)、沙美特羅(salmeterol)、沙奎那維爾(saquinavir)、沙格司亭(sargramostim)、沙雷肽酶(serrapeptase)、舍曲林(sertraline)、司維拉姆(sevelamer)、西布曲明(sibutramine)、西登那非(sildenafil)、辛維司汀(simvastatin)、梭馬托品(somatropin)、索他洛(sotalol)、螺內酯、司他夫定(stavudine)、舒巴坦(sulbactam)、球磺胺、磺胺甲異噁唑、洒拉淨(sulfasalazine)、舒比來特(sulpiride)、舒馬曲坦(sumatriptan)、他克莫司(tacrolimus)、它莫西芬(tamoxifen)、坦舒洛新(tamsulosin)、他唑巴坦(tazobactam)、替考拉寧(teicoplanin)、替莫普利(temocapril)、替莫唑胺(temozolomide)、替奈替普酶(tenecteplase)、天諾西坎(tenoxicam)、替普瑞酮(teprenone)、特拉唑新(terazosin)、特比奈吩(terbinafine)、特布泰林(terbutaline)、破傷風類毒素、四苯納嗪(tetrabenazine)、四沙泮(tetrazapam)、百里酚、噻加賓(tiagabine)、替勃龍(tibolone)、泰卡西林(ticarcilli)、噻氯匹定(ticlopidine)、替莫洛(timolol)、替羅非班(tirofiban)、泰札啶(tizanidine)、泰百黴素(tobramycin)、菸鹼酸生育酚、托特羅定(tolterodin)、妥品美(topiramate)、托泊替康(topotecan)、托拉塞米(torasemide)、特拉嗎竇(tramadol)、川多普利(trandolapril)、曲妥珠邁(trastuzumab)、特安皮質醇(triamcinolone)、三唑侖(triazolam)、曲美布汀(trimebutine)、曲美普林(trimethoprim)、托格列酮(troglitazone)、托比司瓊(tropisetron)、妥布特羅(tulobuterol)、烏諾普司通(unoprostone)、尿促濾泡素(urofollitropin)、伐拉洛韋(valacyclovir)、偉伯益酸(valproic acid)、伐沙坦(valsartan)、萬古鰴素(vancomycin)、凡拉法新(venlafaxine)、汎泊密(verapamil)、維替泊芬(verteporfin)、威嘎巴純(vigabatrin)、溫諾平(vinorelbine)、溫諾西汀(vinpocetine)、伏格列波(voglibose)、殺鼠靈(warfarin)、札非魯卡(zafirlukast)、札來普隆(zaleplon)、札那米韋(zanamivir)、奇弗定(zidovudine)、佐米曲普坦(zolmitriptan)、佐匹丹(zolpidem)、佐匹克隆(zopiclone)及其衍生物。然而,亦理解活性藥學成分意指其他物質,諸如維他命、原維生素、必需脂肪酸、植物性來源及動物性來源之萃取物、植物性來源及動物性來源之油、植物性醫藥製劑及順勢療法製劑。
本發明顆粒矽石尤其可用作動物飼料添加劑之載體,該等添加劑係例如甲酸、丙酸、乳酸、磷酸、氯化膽鹼溶液、醋酸維他命E、植物萃取物,例如萬壽菊萃取物。
此外,本發明顆粒矽石可用作化學產物的載體材料,該等化學產物係諸如三聚氰胺樹脂、橡膠添加劑、塑膠添加劑、建築化學品之添加劑或塗料添加劑。
本發明顆粒矽石最佳係用作所有種類之觸媒的支撐體材料。該等觸媒尤佳可為酶或不同酶之組合,例如來自氧化還原酶、轉移酶、水解酶、脂肪酶、分解酶(lysases)、異構酶及連接酶等類別之酶(根據國際生化聯盟命名委員會(Nomenclature Committee of the International Union of Biochemistry and Molecular Biology)之EC(酶委員會)編號)。已藉由例如再組技術製造之酶變體同樣應包括在術語「酶」中。
為製造經裝載之載體或支撐體,本發明顆粒矽石係與至少一種待吸收之物質接觸,使該物質可滲透至該矽石的孔內。為此目的,可能使用本技術中所有習知技術,例如噴淋施加、逐滴施加、飽和、浸漬、噴嘴噴淋等。該矽石較佳係最初裝填於固體混合單元,例如捏合機、槳式乾燥器、滾筒式混合機、垂直混合機、槳式混合機、Schugi混合機、混凝土混合機、Gericke連續混合機、Eirich混合機及/或圓筒倉混合機。與待吸收之物質的性質與組成關係密切的該混合單元中之溫度較佳為介於5與90℃之間,更佳為介於10與70℃之間。該混合機中之壓力較佳係介於0.1巴與2巴之間,更佳為介於0.5巴與1.2巴之間。
該經裝載之載體或支撐體中的被吸收物質之含量係介於5與70%之間,較佳為介於5與65%之間,更佳為介於5與60%之間。術語「被吸收物質」描述施加至該載體或支撐體之所有物質的總和。
本發明吸收物尤佳係用作固定床反應器中之觸媒、用於異相催化領域、用於流體化床反應器,及用於懸浮液中之反應。
所使用之原材料及本發明顆粒矽石之物理化學數據係由以下方法測定:
測定BET表面積
矽石之氮比表面積(下文稱為BET表面積)係根據ISO 9277測定作為多點表面積。所使用之測量儀器為得自Micromeritics之TriStar 3000表面積測量儀器。該BET表面積通常係在液態氮之飽和蒸氣壓之0.05-0.20的分壓範圍內測定。該樣本係藉由在得自Micromeritics之VacPrep 061加熱站中於160℃真空下加熱一小時製備。
測量DBP吸收作用
矽石吸收率之量測標準的DBP吸收作用(DBP數)係根據如下之標準DIN 53601測定。
將12.50 g含水量3-10%之矽石(視需要,在乾燥箱中於105℃下乾燥來調整該含水量)引入得自Brabender之C吸收儀的捏合室。使用軟體BRABENDER Automatic Oil Absorption System Version 1.1.2之PC支援在C吸收儀上進行測量,所測量之轉矩曲線具有固定減幅。
在濾餅之情況下,其係在使用前在乾燥箱中於105℃下乾燥至含水量<10%,並通過3 mm之篩,然後通過300 μm之篩。
於左向捏合機槳之周邊速率為125 rpm下,形成該C吸收儀一部分的Titronic Universal滴定管(得自Schott)係用以在室溫下於以4 ml/min之速率將苯二甲酸二丁酯逐滴添加至該捏合室。停止該捏合機及DBP測量之該C吸收儀的控制軟體開關點係界定為轉矩為0.6 Nm。
以下公式用以計算DBP吸收作用[g/100 g]:
其中
DBP:DBP吸收作用[g/100 g]
V:所消耗之DBP[ml]
D:DBP密度[g/ml](於20℃下為1.047 g/ml)
E:矽石之起始重量[g]
K:根據水分校正表之校正值[g/100 g]
該DBP吸收作用係針對無水經乾燥之矽石界定。在使用未經乾燥之矽石的情況下,DBP吸收作用之計算應考慮校正值K。該值可使用以下校正表測定。
實施例:
若矽石之含水量為5.8%,將33 g/100 g之校正值K加至如上述之DBP吸收作用的分析值。矽石之含水量係以下文所述之「測定含水量」方法來測定。
使用雷射繞射測定粒子大小
應用雷射繞射測定粉碎固體之粒子大小分布係以該等粒子將光從單色雷射光束以所有方向散射或繞射並根據其大小而具有不同強度圖案之現象為基礎。被照射之粒子直徑愈小,該單色雷射光束之散射或繞射角愈大。
用於使用雷射繞射測量粒子大小的樣本製備
由於樣本粒子之大小部分超過所使用之儀器測量範圍以及未曝露於超音波之d50對曝露於超音波3分鐘後之d50U的比係視起始粒子大小而定(較小之材料粒子具有較高之所述大小比),藉由篩出該樣本的400 μm至500 μm粒子部分進行該測量。此操作容許可靠地比較不同材料之安定性,以獲得有關特定物質安定性的陳述。以配備有400 μm及500 μm之篩的Haver & Boecker(59302 Oelde)之HAVER EML 200 Digital Plus過篩機進行該過篩作用。將5 g起始材料施加至上方之500 μm篩,並以1.0振幅設定過篩2分鐘。使用介於400 μm與500 μm之間的粒子部分做進一步分析。
對比較而言極為重要的400 μm至500 μm部分不應為本載體或支撐體材料的粒子大小分布一部分,藉由得自Eweka GmbH(Heusenstamm)之TG2S過篩造粒機之助使充足量之起始材料以每分鐘振盪100次通過500 μm之篩,然後通過400 μm之篩篩除來製造對應之過篩部分。如上述完成過篩。
測定未曝露於超音波之d50
在親水矽石之情況下,製備樣本以供使用LS 230雷射繞射系統(得自Beckman Coulter;測量範圍0.04至2000 μm)及液體模組(Small Volume Module Plus,120 ml,得自Beckman Coulter,其結合超音波指形零件)的分析,並以去礦物質水中之0.05% m/m二磷酸四鈉作為分散液體,在水可濕潤性不足之矽石的情況下,以乙醇/水混合物(體積比1:1)作為分散液體。該分析開始之前,雷射繞射系統必須暖機2小時。之後,以分散液體沖洗SVM模組三次。與粒子分析相關之下列參數應設為:
分析時間:60秒
測量次數:1
泵唧速度:75%
光學模型:夫朗和斐(Fraunhofer)
PIDS功能:停用
偏移分析:啟用
調整:自動
背景測量:啟用
設定樣本濃度:啟用
使用刮勺添加矽石過篩部分(400至500 μm)直到達到LS 230雷射儀繞射所需之測量濃度出現「OK」訊息為止。藉由泵唧循環在未曝露於超音波之下將矽石分散液分散60秒之後,在室溫下進行該分析。該軟體根據夫朗和斐模型(Fraunhofer.rfd檔案)從原數據曲線計算粒子大小分布及未曝露於超音波之d50(中位)。
測定以100%振幅之超音波處理3分鐘後之d50U
存在LS 230雷射繞射儀中之矽石懸浮液係藉由該SVM模組(得自Sonics之Vibra Cell VCX 130超音波處理器,其具有CV 181超音波轉換器及6mm之超音波尖端)中結合之超音波指形零件,以100%振幅且該液體模組中同時泵唧循環之下超音波處理180秒再次分散,並如上述般分析。
該軟體根據夫朗和斐模型(Fraunhofer.rfd檔案)從原數據曲線計算粒子大小分布及曝露於超音波3分鐘後之d50U(中位)。
在動態影像評估中,大量材料之物流向下落在光源與相機之間。粒子係偵測為突出區域,以電腦程式將之數位化並轉換成粒子大小。
為測量粒子大小,使用得自RETSCH Technology GmbH(Haan)之CAMSIZER。藉由具有貯槽漏斗之DR 100-40計量通道將粒子供應至測量儀器。為進行影像評估,應使用所供應之3.12d版軟體。
在開始分析之前,容許該儀器暖機2小時。此確使該照明單元及該相機前的玻璃護板無粉塵。介於漏斗與計量通道之間的距離調整至最大粒子大小的約三倍。該計量通道直接置於測量儀器上方。將約150ml之樣本導入該漏斗內。下列分析之參數係記錄於分析任務檔案(*.afg)
:
為調節該計量通道,下列設定係記錄於該軟體中:
在該數位化影像之評估中,x值係從min(xc)值計算。未使用形狀因子:
dQ3=10%之輸出及dQ3=90%之輸出係在基本參數中決定:
藉由配適檔案之助,分析數據未進行配適。
矽石之含水量係根據ISO 787-2測定。為此,在乾燥箱中以(105±2)℃乾燥數量為1至4g之樣本為時2小時,並根據ISO規範評估。該乾燥損失主要由物理性結合的水組成。
矽石之pH係在室溫下以水性懸浮液測定。事先將粒化之樣本研碎或研磨。將95g去離子水加入5g之矽石。藉由磁性攪拌器攪拌5分鐘。之後,直接借助於在預期測量範圍內校正之pH計(Metrohm 780 pH Meter)精確測量該懸浮液之pH至小數點下一位。
該方法係基於根據DIN 66133的汞入侵,使用得自Micromeritics之AutoPore IV 9520系統進行。該方法原理係根據與所施加壓力密切相關之注入多孔固體的汞體積之測量。此只涵蓋在所施加壓力(最大值414MPa)之下汞可滲透之孔(Ritter and Drake法)。
非濕潤液體只在壓力下滲透至多孔系統中。待使用之壓力與孔口徑之淨寬度成反比。就圓柱形孔而言,介於孔半徑rp與壓力p之間的關係係由Washburn方程式呈現:
rp:孔半徑
p:壓力
σ:表面張力(480mN/m*)
θ:汞之接觸角(140°*)
*根據DIN 66133
汞孔隙容積4μm係從直徑4μm至AutoPore IV 9520偵測限制(最大壓力414MPa)之所有孔的累積孔隙容積計算。
以下實施例希望舉例說明本發明,但不限制本發明。
將得自Evonik Degussa GmbH之SIPERNAT®50S在混合機(得自Somakon,MP-L1)中並在添加200ml水/100g矽石情況下混合與壓實。此係使用0.5升之混合容器(具有標準混合截面)在23℃之溫度下完成。在2200rpm之混合速率下,將30g之水計量加入在20秒內秤重之15g矽石,然後混合該混合物直到粒化為止。當已形成向外稍微潮濕之5mm聚集物時立即停止操作。將所獲得之顆粒在乾燥箱中於160℃下乾燥至恆重,然後通過500μm之篩並在另一步驟過篩通過400μm之過篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙
度測試。
將得自Evonik Degussa GmbH之SIPERNAT®50S在混合機(得自Somakon,MP-L1)中並在添加270ml水/100g矽石情況下混合與壓實。此係使用0.5升之混合容器(具有標準混合截面)在23℃之溫度下完成。在2200rpm之混合速率下,將40.5g之水計量加入在20秒內秤重之15g矽石,然後混合該混合物直到粒化為止。當已形成向外稍微潮濕之5mm聚集物時立即停止操作。將所獲得之顆粒在乾燥箱中於160℃下乾燥至恆重,然後通過500μm之篩並在另一步驟過篩通過400μm之過篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙度測試。
將實施例2所製造之載體或支撐體矽石樣本貯存在110℃之水蒸氣氣氛下16小時,然後在120℃下乾燥至恆重,並用於後續之硬度及孔隙度測試。
將SIPERNAT® 22(得自Evonik Degussa GmbH)懸浮液(固體含量約25%)的濾餅以預粉碎形式導入桶式造粒機(得自RWK)。在20%之填充程度,8rpm之速度、
批次時間為90分鐘及120℃之溫度下,形成乾燥顆粒。然後在具有1250μm篩插件的過篩造粒機(得自Frewitt,MG 633)中將該等顆粒壓碎成界定之最大粒子大小。為獲得無粉塵產物,藉由通過400μm篩之過篩作用(得自Gough,Vibrecon GV 2/l,Ø 600mm)來去除細料。該等細料可與下一粒化批次之濾餅一起使用。將所獲得之顆粒在乾燥箱中於160℃下乾燥至恆重,然後通過500μm之篩並在另一步驟過篩通過400μm之過篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙度測試。
將SIPERNAT® 22(得自Evonik Degussa GmbH)懸浮液(固體含量約25%)的濾餅以預粉碎形式導入桶式造粒機(得自RWK)。在20%之填充程度,8rpm之速度、批次時間為90分鐘及120℃之溫度下,形成乾燥顆粒。
將5.0g如此獲得之顆粒秤重至瓷皿(質量154g;直徑:120mm),並置入預熱至1000℃之實驗室用爐(Nabertherm)。5分鐘後,移出該樣本,並立即轉移至冷玻璃容器。該等冷卻之顆粒隨後通過500μm之篩,並在另一步驟中過篩通過400μm之篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙度測試。
使用壓實機(得自Bepex,L200/50)以40kN之輥接觸壓力將Evonik Degussa GmbH之SIPERNAT® 22壓實。該等壓實物隨後在具有2800μm之篩插件的過篩造粒機(得自Frewitt,MG 633)中被壓碎成界定之最大粒子大小。為了獲得無粉塵產物,藉由通過400μm篩之過篩作用(得自Gough,Vibrecon GV 2/1,Ø 600mm)來去除細料,並再循環至該壓實機之初始裝填。為進行測試,將該等顆粒通過500μm之篩,並在另一步驟中過篩通過400μm之篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙度測試。
將得自Evonik Degussa GmbH之SIPERNAT®50S在混合機(得自Somakon,MP-L1)中並在添加233ml水/100g矽石情況下混合與壓實。此係使用0.5升之混合容器(具有標準混合截面)在23℃之溫度下完成。在2200rpm之混合速率下,將35g之水計量加入在20秒內秤重之15g矽石,然後混合該混合物直到粒化為止。當已形成向外稍微潮濕之5mm聚集物時立即停止操作。將所獲得之顆粒在乾燥箱中於160℃下乾燥至恆重,然後通過500μm之篩並在另一步驟過篩通過400μm之過篩。如此獲得之400至500μm過篩部分係用於後續之硬度及孔隙度測試。
將根據實施例1至7之本發明矽石的物理化學性質列
於下表2。
表2含有先前技術之對照矽石的物理化學性質之特徵。對照實例A及B對應於得自Evonik Degussa GmbH之Ultrasil® 7000 GR及Ultrasil® VN3 GR。對照實例C包括得自Rhodia Chimie之Zeosil® 165 GR®。對照實例D包括得自Huber之Zeodent DP-9175。對照實例A至C之矽石在商業上用以強化汽車輪胎之橡膠。
表2中,由起始矽石壓實所造成的實施例1及2清楚顯示出粒子安定性(藉由未曝露於超音波之d50U對曝露於超音波3分鐘後之d50的比測量)隨著濕潤過程中水含量減少而提高。然而,同時吸收率減少,此係以Hg孔隙
容積表示。
所述之製造方法確使得自實施例1至7之產物僅具有非常小之細料部分,此以大於400μm之dQ3=10%表示。
此外,實施例3顯示本發明矽石之後處理產生令人意外之粒子安定性之淨增加且孔隙度實質上未改變。
實施例5顯示可獲致具有極高硬度之粒子。
在對照實例A至C中所測試之該載體或支撐體矽石具有相當高吸收率,但因其硬度太低(以d50至d50U之比表示特徵),彼等不適於催化程序中之應用。此外,dQ3=90%值明顯大於3000μm,此係因在作為觸媒支撐體的應用當中,該矽石之孔系統中的反應物及產物擴散通道太長所致。
對照實例D中所測試之載體或支撐體矽石極顯著的是充足吸收率及硬度,但其dQ3=10%過低,此導致反應器中之壓降提高,並增加吸收物之流動阻力。
此證實本發明顆粒矽石具有充分低細料含量,因此同時提供充足安定性及孔隙度,此與迄今慣用之商業使用的載體或支撐體矽石明顯不同。
Claims (20)
- 一種顆粒矽石,其- Hg孔隙容積(<4μm)大於0.90ml/g,- dQ3=10%大於400μm,同時dQ3=90%小於3000μm,且- 未曝露於超音波之d50對曝露於超音波3分鐘後之d50的比<4.00,此測量係對400至500μm之粒子部分進行。
- 如申請專利範圍第1項之顆粒矽石,其中該顆粒矽石之pH在5至8.5範圍內。
- 如申請專利範圍第1或2項之顆粒矽石,其中該顆粒矽石之未曝露於超音波之d50對曝露於超音波3分鐘後之d50的比為1.00至3.00,此測量係對400至500μm之粒子部分進行。
- 如申請專利範圍第1或2項之顆粒矽石,其中該顆粒矽石之Hg孔隙容積(<4μm)大於1.35ml/g。
- 如申請專利範圍第1或2項之顆粒矽石,其中該顆粒矽石之Hg孔隙容積(<4μm)為0.9至1.34ml/g。
- 一種製造顆粒矽石之方法,其包括以下步驟:a)提供呈經乾燥及/或經研磨形式之沉澱矽石或焰製(fumed)矽石,其- 未經超音波處理之平均粒子大小d50為0.1至350μm,- BET表面積為30至800m2/g,且 - DBP數為140至400g/100g;b)根據所用成形法將得自步驟a)之矽石濕潤至乾燥損失為30-80重量%;c)藉由擠壓、粒化、壓實或其他慣用成形法將得自步驟b)之矽石成形;d)在適用之乾燥單元中乾燥該成形之矽石體;及e)以3000μm之篩大小過篩粒化或過篩顆粒且以400μm之篩目大小篩除細料。
- 如申請專利範圍第6項之方法,其中以乾燥損失為30-80重量%之含水濾餅用作步驟c)之起始材料。
- 如申請專利範圍第6項之方法,其中在步驟c),於高速強力混合機中將得自步驟b)之矽石壓實及粒化。
- 一種製造顆粒矽石之方法,其包括以下步驟:i)提供呈經乾燥及/或經研磨形式之沉澱矽石或焰製矽石,其乾燥損失<30重量%,且- 未經超音波處理之平均粒子大小d50為0.1至350μm,- BET表面積為30至800m2/g,且- DBP數為140至400g/100g;ii)藉由乾式壓實將得自步驟i)之矽石成形,係以0.5kN/cm輥寬至12kN/cm輥寬之比接觸壓力實施,以產生壓塊,及iii)以3000μm之篩大小過篩粒化或過篩顆粒且以400μm之篩目大小篩除細料。
- 如申請專利範圍第6至9項中任一項之方法,其中去除所有小於400μm之過篩部分。
- 如申請專利範圍第6及9項中任一項之方法,其中在不添加黏合劑之情況下進行成形步驟c)及ii)。
- 一種如申請專利範圍第1至5項中任一項之顆粒矽石的用途,係用於製造吸收物。
- 一種吸收物,其包含如申請專利範圍第1至5項中任一項之顆粒矽石其中至少一者。
- 如申請專利範圍第13項之吸收物,其中該吸收物包含至少一種催化活性物質。
- 如申請專利範圍第13及14項中任一項之吸收物,其中該被吸收物質係以1至70重量%之比例施加。
- 如申請專利範圍第13及14項中任一項之吸收物,其中該活性物質或活性物質混合物係以1至20重量%之比例施加。
- 一種製造如申請專利範圍第13至16項中任一項之吸收物的方法,其特徵在於將如申請專利範圍第1至5項中任一項之顆粒矽石與至少一種選自由以下者所組成之群組之液體接觸:硬化劑或起始劑、交聯劑、觸媒、活性藥學成分及賦形劑、活性化妝成分及賦形劑、清潔及/或保養組成物、調味料、芳香物質(aroma)及芳香劑(fragrance)、動物飼料或動物飼料添加劑、食品或食品添加劑、染料及/或顏料、胺基酸、氧化劑或漂白劑、具有殺微生物(尤其是殺真菌或殺菌)作用之添加劑、農業及 林業用之化學品,及/或混凝土摻合物。
- 一種如申請專利範圍第13至16項中任一項之吸收物的用途,係用於催化程序。
- 如申請專利範圍第18項之用途,其中該程序係在固定床反應器、流體化床反應器中進行,或藉由將該等吸收物懸浮於反應混合物中進行。
- 如申請專利範圍第18及19項中任一項之用途,其中該等吸收物包含酶作為申請專利範圍第1至5項中任一項之顆粒矽石上的觸媒。
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WO2016171753A1 (en) * | 2015-04-22 | 2016-10-27 | The United States Of America As Represented By The Secretary Of The Navy | Insect control formulation with improved autodissemination characteristics |
RU2613917C2 (ru) * | 2015-07-06 | 2017-03-22 | Общество с ограниченной ответственностью "Эмпилс - Цинк" | Способ гранулирования порошков и оборудование для его осуществления |
DE102015216505A1 (de) * | 2015-08-28 | 2017-03-02 | Wacker Chemie Ag | Silica Formkörper mit geringer thermischer Leitfähigkeit |
CN106115720B (zh) * | 2016-08-14 | 2017-07-14 | 皖西学院 | 一种利用稻壳灰制备纳米二氧化硅的方法 |
JP6855583B2 (ja) | 2017-02-27 | 2021-04-07 | ワッカー ケミー アクチエンゲゼルシャフトWacker Chemie AG | 疎水性シリカ顆粒の製造法 |
RU2708003C1 (ru) * | 2019-03-21 | 2019-12-03 | Акционерное общество "Обнинское научно-производственное предприятие "Технология" им. А.Г. Ромашина" | Способ получения гранулята кремния для аддитивного производства изделий из реакционносвязанных нитридов и карбидов кремния |
CN111303993A (zh) * | 2020-03-20 | 2020-06-19 | 佳格食品(中国)有限公司 | 一种新型环保吸附剂在高效吸附植物油风险物质中的应用 |
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US20010051176A1 (en) | 1997-08-06 | 2001-12-13 | Jean-Francois Viot | Composition comprising a liquid absorbed on a support based on precipitated silica |
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FR2776537B1 (fr) | 1998-03-30 | 2000-05-05 | Rhodia Chimie Sa | Composition comprenant un liquide absorbe sur un support a base de silice precipitee |
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2010
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- 2011-03-14 BR BR112012024021A patent/BR112012024021B1/pt active IP Right Grant
- 2011-03-14 EP EP11707879.0A patent/EP2550095B1/de active Active
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- 2011-03-14 WO PCT/EP2011/053798 patent/WO2011117100A1/de active Application Filing
- 2011-03-14 US US13/582,177 patent/US10752510B2/en active Active
- 2011-03-14 KR KR1020127024679A patent/KR101770855B1/ko active IP Right Grant
- 2011-03-14 PL PL11707879T patent/PL2550095T3/pl unknown
- 2011-03-14 RU RU2012145006/04A patent/RU2551858C2/ru active
- 2011-03-14 ES ES11707879.0T patent/ES2651742T3/es active Active
- 2011-03-14 CN CN201180015532.7A patent/CN102821842B/zh active Active
- 2011-03-14 HU HUE11707879A patent/HUE035792T2/en unknown
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BR112012024021B1 (pt) | 2018-07-24 |
KR20130018700A (ko) | 2013-02-25 |
PL2550095T3 (pl) | 2018-03-30 |
WO2011117100A1 (de) | 2011-09-29 |
AR080715A1 (es) | 2012-05-02 |
DE102010003204A1 (de) | 2011-12-15 |
RU2012145006A (ru) | 2014-04-27 |
JP2013525239A (ja) | 2013-06-20 |
PT2550095T (pt) | 2017-12-18 |
KR101770855B1 (ko) | 2017-08-23 |
CA2794028A1 (en) | 2011-09-29 |
EP2550095A1 (de) | 2013-01-30 |
CN102821842B (zh) | 2014-11-12 |
BR112012024021A2 (pt) | 2016-08-30 |
EP2550095B1 (de) | 2017-10-18 |
TW201206827A (en) | 2012-02-16 |
ES2651742T3 (es) | 2018-01-29 |
RU2551858C2 (ru) | 2015-05-27 |
US20120322893A1 (en) | 2012-12-20 |
ZA201207135B (en) | 2013-05-29 |
JP5777697B2 (ja) | 2015-09-09 |
US10752510B2 (en) | 2020-08-25 |
MX2012010878A (es) | 2012-10-15 |
CN102821842A (zh) | 2012-12-12 |
HUE035792T2 (en) | 2018-05-28 |
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