TWI502288B - An exposure apparatus, an exposure method, a manufacturing method of an element, and an opening plate - Google Patents

Description

Exposure apparatus, exposure method, method of manufacturing the same, and aperture plate

The present invention relates to an exposure apparatus, an exposure method, a method of manufacturing an element, and an aperture plate.

When a liquid crystal display element or the like is manufactured by photolithography, an exposure apparatus that projects a pattern formed on a mask (original) onto a substrate via a projection optical system and transfers the pattern is used. In recent years, in an exposure apparatus, in order to increase the size and cost of the liquid crystal display element, an area (exposure area) capable of expanding exposure by scanning exposure is required.

As a technique for expanding the exposure area, for example, a so-called joint exposure using a plurality of projection optical systems is proposed in Japanese Laid-Open Patent Publication No. 2009-237916. The connection exposure is performed by arranging a projection area (that is, a plurality of projection areas) formed by each of the plurality of projection optical systems such that a part of the adjacent projection areas overlap in a direction orthogonal to the scanning direction, thereby expanding the exposure as a whole. The width of the area.

The technique disclosed in Japanese Laid-Open Patent Publication No. 2009-237916 will be specifically described with reference to Figs. 9 to 11 . FIG. 9 is a schematic view showing an overall configuration of an exposure apparatus EA. The exposure device EA has a mask mounting table that holds the mask M The MST, the substrate mounting table PST holding the substrate P, the illumination optical system IL for illuminating the mask M with the exposure light EL, and the projection optical system PL for projecting the pattern of the mask M onto the substrate P. As shown in FIG. 9, the projection optical system PL includes seven optical system modules PLa to PLg. The exposure device EA transfers the pattern of the mask M while the projection area formed by each of the optical system modules PLa to PLg is coupled to the Y-axis direction, that is, partially overlapped and scanned in the X-axis direction. To the substrate P.

FIG. 10 is a view showing a configuration of a blind unit BU disposed at a position conjugate with the mask M or the substrate P. The curtain unit BU includes a field stop FS and a curtain BB for each of the optical system modules PLa to PLg. The projection areas PRa to PRg in the substrate P of each of the optical system modules PLa to PLg are defined by openings K formed in the corresponding field stop FS. The curtain BB has a hypotenuse parallel to any one of the oblique sides of the opening K, and is movable in the X-axis direction and the Y-axis direction to shield a part of the opening K.

In the exposure apparatus EA, for example, as shown in FIG. 11, a case where the pattern PPA of the mask M is divided into the partial pattern PA and the partial pattern PB and transferred to the substrate P is considered. In this case, the overlapping area, that is, the boundary of the partial pattern PA (transfer pattern MA transferred to the substrate P) and the partial pattern PB (transfer pattern PB transferred to the substrate P) can be made by the curtain unit BU. There is a change between the BLA and the boundary BLB. The reason why the overlapping area is changed in this way is because, in the joint exposure, if the overlapping area is not controlled according to the pattern of the mask, a line width difference (non-uniformity) is generated in the pattern transferred to the substrate.

However, as a result of intensive research by the present inventors, it has been found that in the joint exposure, if the width of the overlapping area of the projection area, that is, the shape of the end portion of each projection area is not controlled, the pattern of the mask will occur. Not uniform. Referring to Fig. 10, in the technique disclosed in Japanese Laid-Open Patent Publication No. 2009-237916, the entire area connected by the projection areas PRa to PRg defined by the opening K is divided, and the pattern of the mask is transferred to the substrate. This is effective in the occurrence of unevenness. However, as described above, for example, if the width of the overlapping area of the projection area PRa and the projection area PRb, that is, the shape of the end portion of each projection area in the Y-axis direction is not controlled, unevenness occurs due to the pattern of the mask. .

The present invention provides an exposure apparatus that facilitates controlling the shape of the end of a projection area formed on a substrate via a projection optical system.

An exposure apparatus according to an aspect of the present invention includes a projection optical system that projects a pattern of a mask onto a substrate, and a part of a projection area formed on the substrate via the projection optical system is superimposed in a first direction, and the The mask and the substrate are synchronously moved in a second direction orthogonal to the first direction, and the pattern is transferred to the substrate. The exposure apparatus includes an opening plate having an opening for defining the projection area. The adjustment unit shields a part of the opening to adjust a shape of the end portion of the projection region in the first direction, and the acquisition unit acquires a width of the overlapping region in which the projection region overlaps in the first direction; and a control unit Determining the projection area based on the width obtained by the acquisition unit The shape of the end portion in the first direction of the domain is such that the unevenness of the illuminance distribution formed on the substrate is reduced, and the adjustment portion is controlled such that the end surface in the first direction of the projection region becomes The shape determined by the decision.

Further objects and other aspects of the invention will be apparent from the following description of the preferred embodiments illustrated herein

1‧‧‧Exposure device

10‧‧‧Lighting optical system

20‧‧‧opening plate

30‧‧‧ imaging optical system

40‧‧‧ mask

50‧‧‧Projection optical system

60‧‧‧Substrate

70‧‧‧Adjustment Department

80‧‧‧Acquisition Department

90‧‧‧Control Department

202‧‧‧ openings

502‧‧‧Mirror tube

508‧‧‧ concave mirror

504a‧‧‧Optical film

20A‧‧‧Opening plate

506‧‧‧Folding mirror

510‧‧‧ convex mirror

60a‧‧‧Transfer area

K‧‧‧ openings

BLA‧‧ border

IDa‧‧‧illuminance distribution

PA‧‧‧ partial pattern

EPa‧‧‧ end

P‧‧‧Substrate

702‧‧ ‧ visor

202A‧‧‧ openings

704‧‧‧Actuator

706‧‧‧ rod

702a‧‧‧ end face

PRb‧‧‧projection area

EA‧‧‧ exposure device

M‧‧‧ mask

IDb‧‧‧illuminance distribution

EL‧‧‧Exposure light

PL‧‧‧Projection Optical System

PST‧‧‧Substrate mounting table

MST‧‧‧ mask mounting table

PLa~PLg‧‧‧Optical system module

PRa~PRg‧‧‧Projection area

BB‧‧‧

FS‧‧ ‧ field diaphragm

BU‧‧‧About unit

MA‧‧·Transfer pattern

PPA‧‧‧ mask M pattern

BLB‧‧‧ border

ID‧‧‧illuminance distribution

EPb‧‧ End

PB‧‧‧ partial pattern

504b‧‧‧Optical film

702b‧‧‧ end face

OR‧‧‧Overlapping area

Fig. 1 is a schematic view showing a configuration of an exposure apparatus as an aspect of the present invention.

2A and 2B are views for explaining exposure processing (connection exposure) performed by the exposure apparatus shown in Fig. 1.

FIG. 3 is a view for explaining the necessity of stepwise change in the connection width of the overlapping region in which the projection regions are superimposed.

4 is a view for explaining an expression defining a curved shape of an end portion of a projection region.

5A and 5B are schematic views showing an example of a specific configuration of an adjustment unit of the exposure apparatus shown in Fig. 1.

6A and 6B are views for explaining exposure processing (joining exposure) performed by the exposure apparatus shown in Fig. 1.

Fig. 7 is a view showing an opening plate having an opening for taking out trapezoidal light.

8A and 8B are schematic diagrams showing an example of a specific configuration of an adjustment unit of the exposure apparatus shown in Fig. 1.

Fig. 9 is a schematic view showing an overall configuration of an exposure apparatus.

Fig. 10 is a view showing a configuration of a curtain unit of the exposure apparatus shown in Fig. 9;

Fig. 11 is a view for explaining connection exposure in the exposure apparatus shown in Fig. 9.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

Fig. 1 is a schematic view showing a configuration of an exposure apparatus 1 as an aspect of the present invention. The exposure apparatus 1 overlaps a part of the projection area formed on the substrate via the projection optical system in the first direction (X-axis direction), and causes the mask and the substrate to be in the second direction orthogonal to the first direction (Y-axis direction) Moving synchronously, the pattern of the mask is transferred to the substrate. In other words, the exposure device 1 is a scanning type exposure device that performs connection exposure.

In order to achieve the link exposure, the following two methods can be considered. The first method is a method in which a plurality of projection optical systems are used as described in the prior art, and a part of adjacent projection regions are superimposed on a plurality of projection regions defined on the substrate. The second method is to use one projection optical system in which a part of the projection area specified on the substrate is overlapped for each exposure process (that is, a part of the projection area is overlapped while being equally spaced at equal intervals). )Methods. The first method and the second method are due to the achievement of the joint exposure Since it can be the same, the second method will be described as an example in the present embodiment.

The exposure apparatus 1 includes an illumination optical system 10, an aperture plate 20, an imaging optical system 30, a mask stage (not shown) that holds and moves the mask 40, a projection optical system 50, and a substrate stage that holds and moves the substrate 60 ( Not shown). Further, the exposure apparatus 1 includes an adjustment unit 70, an acquisition unit 80, and a control unit 90.

The illumination optical system 10 is an optical system for illuminating the mask 40 using light from a light source. The opening plate 20 is an opening for taking out light having a predetermined shape from light passing through the illumination optical system 10, and in the present embodiment, has an opening for defining a projection area formed on the substrate 60 via the projection optical system 50. 202. The imaging optical system 30 is an optical system for imaging light intercepted by the aperture plate 20 (i.e., light that has passed through the opening 202 of the aperture plate 20) on the mask 40. The mask 40 has a pattern (circuit pattern) to be transferred to the substrate 60, is held by the mask stage, and is disposed on the object surface of the projection optical system 50.

The projection optical system 50 is an optical system that projects a pattern (image) of the mask 40 illuminated by the illumination optical system 10 onto the substrate 60. In the present embodiment, the projection optical system 50 includes a lens barrel 502, optical films 504a and 504b disposed on the incident side and the exit side of the lens barrel 502, a meandering mirror 506, a concave reflecting mirror 508, and a convex reflecting mirror 510. The light diffracted by the pattern of the mask 40 passes through the optical film 504a, the meandering mirror 506, the concave reflecting mirror 508, the convex reflecting mirror 510, the concave reflecting mirror 508, the meandering mirror 506, and the optical film 504b in the order of the substrate 60. Imaging on. Since the exposure apparatus 1 is a scanning type exposure apparatus, the pattern of the mask 40 is transferred to the substrate 60 by scanning the mask 40 and the substrate 60 in the scanning direction (Y-axis direction).

The substrate 60 is a substrate on which a pattern of the mask 40 is projected (transferred), is held by the substrate stage, and is disposed on the image plane of the projection optical system 50. A resist (photosensitive agent) is applied to the substrate 60. The substrate 60 includes a glass plate (liquid crystal panel), a wafer, and other substrates.

The adjustment unit 70 shields a part of the opening 202 of the aperture plate 20 and adjusts the shape of the end portion in the direction (X-axis direction) orthogonal to the scanning direction of the projection region formed on the substrate 60 via the projection optical system 50. The specific structure of the adjustment unit 70 will be described in detail later.

In the connection exposure, the acquisition unit 80 obtains a width (X-axis direction) orthogonal to the scanning direction of the overlapping region in which the projection regions formed on the substrate 60 via the projection optical system 50 are superimposed (hereinafter referred to as “connection width”. "). The width of the connection is generally determined according to the shape of the mask 40. Therefore, the acquisition unit 80 includes, for example, a memory unit that stores the correspondence between the mask 40 used in the exposure device 1 and the connection width, an identification unit of the recognition mask 40, and a reference to the memory unit based on the recognition result of the recognition unit. The determination unit determines the connection width. However, instead of the identification unit, the user may use the input unit of the mask 40 that is input to the exposure device 1 to constitute the acquisition unit 80. Further, the user may configure the acquisition unit 80 by using an input unit that directly inputs the connection width.

The control unit 90 includes a CPU and a memory, and controls the entire exposure device 1 (each part of the exposure device 1). In other words, the control unit 90 The exposure processing for transferring the pattern of the mask 40 to the substrate 60, that is, exposing the substrate 60 (in the present embodiment, the connection exposure) is controlled. For example, the control unit 90 determines the shape of the end portion in the direction (X-axis direction) orthogonal to the scanning direction of the projection region based on the connection width acquired by the acquisition unit 80, so that the illuminance distribution formed on the substrate 60 is reduced. Evenly. Further, the control unit 90 controls the adjustment unit 70 so that the end surface in the direction orthogonal to the scanning direction of the projection region formed on the substrate 60 via the projection optical system 50 has a determined shape.

The exposure processing performed by the exposure apparatus 1 of the present embodiment, that is, the connection exposure will be described with reference to FIGS. 2A and 2B. 2A shows a case where the pattern of the mask 40 is transferred to the substrate 60 by two scans (two projection areas are connected), and FIG. 2B shows a pattern of the mask 40 by three times of scanning (joining three projection areas). The case of transfer to the substrate 60. In the following description, the projection area formed on the substrate 60 via the projection optical system 50 is scanned or moved, and the substrate stage 104 is actually moved.

Referring to Fig. 2A, in the transfer region 60a on the substrate 60, the projection region PR _A is projected via the projection optical system 50, and such a projection region PR _{A is} scanned in the Y-axis direction as the scanning direction. However, since the width of the projection area PR _A in the X-axis direction is smaller than the width of the substrate 60 in the X-axis direction, the projection area PR _A is scanned only in the Y-axis direction, and the entire substrate 60 (transfer area 60a) cannot be exposed. . Thus, in addition to scanning the projection region PR _A, but also through the scan region PR _A moving the projection distance α PR _B projection region obtained by the X-axis direction in the Y-axis direction, so that the whole of the substrate 60 is exposed.

Similarly, referring to FIG. 2B, in the transfer region 60a on the substrate 60, the projection region PR _C is projected via the projection optical system 50, and such a projection region PR _{C is} scanned in the Y-axis direction as the scanning direction. Next, the projection area PR _D obtained by moving the projection area PR _C by the distance β in the X-axis direction is scanned in the Y-axis direction. Further, the entire substrate 60 is exposed by scanning the projection region PR _E obtained by moving the projection region PR _D in the X-axis direction by the distance β in the Y-axis direction.

Thus, by patterning the projection areas PR _A and PR _B or the projection areas PR _C to PR _E while partially overlapping them in the Y-axis direction, the pattern of the mask 40 can be transferred on the transfer area 60a on the substrate 60. .

Further, the respective widths (exposure widths) of the projection regions PR _A and PR _B in the X-axis direction are the same, and the respective exposure widths of the projection regions PR _C to PR _E are the same. This is because when the projection areas PR _A and PR _B or the projection areas PR _C to PR _E are scanned in the Y-axis direction, the illuminance (irradiation energy) in the entire substrate 60 is made constant. However, in the overlapping area OR of the projection area PR _A and the projection area PR _B , the overlapping area of the projection area PR _C and the projection area PR _D , and the overlapping area of the projection area PR _D and the projection area PR _E , it is necessary to make the connection width The Y-axis direction changes stepwise.

Referring to Fig. 3, the necessity of stepwise changing the connection width of the overlapping region in which the projection regions are overlapped in the Y-axis direction will be described. In FIG. 3, ID _A represents the illuminance distribution in the projection area PR _A , and ID _B represents the illuminance distribution in the projection area PR _B . When the illuminance distribution ID _A and the illuminance distribution ID _{B are} connected, the illuminance distribution ID is obtained, and the illuminance distribution is uniform (that is, there is no illuminance unevenness) in the entire substrate 60. Here, in FIG. 2A, since the opening 202 of the opening plate 20 has a circular arc shape, the shape of the end portion EP _A in the X-axis direction of the projection region PR _A and the end portion EP in the X-axis direction of the projection region PR _B The shape of _B becomes a curved shape. In other words, the control unit 90 determines the shapes of the respective end portions EP _A and EP _B of the projection regions PR _A and PR _B as a curved shape, and controls the adjustment portion 70 such that the respective end portions EP of the projection regions PR _A and PR _B The shapes of _A and EP _B are curved shapes.

In addition, when the opening 202 of the opening plate 20 has an arc shape, the expression Y defining the curved shape of the end portion in the X-axis direction of the projection region is expressed by the following formula (1). However, as shown in FIG. 4, the radius of the arc-shaped projection area projected onto the substrate 60 corresponding to the circular-arc opening 202 is set to R, and the exposure width of such a projection area is set to 2V. The width of the projection light region in the Y-axis direction is T, and the connection width of the overlap region is T.

Y=R-(R ² -X ² ) ^1/2 +S/T(VX)......(1)

Here, the relationship between the pattern of the mask 40 and the connection exposure will be described. If the pattern of the mask 40 is such that the illuminance unevenness does not occur even if the connection width is narrow, the rhythm related to the scanning time of the projection area should be emphasized, and as shown in FIG. 2A, the mask 40 is scanned by two times of scanning. The pattern is transferred to the substrate 60. However, it is also considered that the pattern of the mask 40 is a pattern in which illuminance is uneven (for example, a line of a narrow line width and a pattern of spaces) without increasing the connection width. In such a case, as shown in FIG. 2B, the connection width should be enlarged, and the mask 40 should be scanned through three scans. The film is transferred to the substrate 60. Thereby, even if the pattern of the mask 40 is a pattern in which illuminance unevenness is likely to occur, the pattern of the mask 40 can be transferred to the substrate 60 with high precision while suppressing occurrence of illuminance unevenness.

An example of a specific configuration of the adjustment unit 70 will be described with reference to FIGS. 5A and 5B. The adjustment unit 70 includes, for example, a light blocking plate 702, an actuator 704, and a rod 706 disposed on the opening plate 20. The light shielding plate 702 is a thin plate having a thickness in the Z-axis direction, and has an end surface 702a having a variable shape. The actuator 704 has a function of applying a force to the end surface 702a of the light shielding plate 702 via the telescopic rod 706. In the present embodiment, the actuator 704 changes the shape (curved shape) of the end surface 702a in a state in which the position of the end surface 702a corresponding to one end of the end portion of the opening 202 in the Y-axis direction is fixed. Specifically, each actuator 704 independently changes the position of the end surface 702a of the light shielding plate 702 (i.e., the position at which the rod 706 is connected). Thereby, the shape of the end portion in the X-axis direction of the projection region can be changed (controlled) into the curved shape shown in FIG. 2A (FIG. 5A) and the curved shape shown in FIG. 2B (FIG. 5B). At this time, the curved shape formed by the end surface 702a of the light shielding plate 702 is set as shown in the above formula (1).

The connection exposure when the opening 202 of the aperture plate 20 has a trapezoidal shape will be described with reference to FIGS. 6A and 6B. 6A shows a case where the pattern of the mask 40 is transferred to the substrate 60 by two scans (two projection areas are connected), and FIG. 6B shows a pattern of the mask 40 by three times of scanning (three projection areas are connected). The case of transfer to the substrate 60. If the pattern of the mask 40 is such that the illuminance unevenness does not occur even if the connection width is narrow, the rhythm related to the scanning time of the projection area is emphasized, as shown in FIG. 6A. As shown, the pattern of the mask 40 is transferred to the substrate 60 by two scans. However, in the case where the pattern of the mask 40 is a pattern in which illuminance is uneven without increasing the connection width, as shown in FIG. 6B, the connection width is enlarged, and the pattern of the mask 40 is transferred by three times of scanning. To the substrate 60. Here, the opening 202 of the opening plate 20 has a trapezoidal shape, and light having a trapezoidal shape is taken out from the light that has passed through the illumination optical system 10. However, as shown in FIG. 7, even if the opening 202 of the opening plate 20 has an arc shape, it is possible to cut out the light having a trapezoidal shape by transmitting the opening plate 20A having the trapezoidal opening 202A further in the rear stage of the opening plate 20.

Referring to Fig. 6A, in the transfer region 60a on the substrate 60, the projection region PR _G is projected via the projection optical system 50, and such a projection region PR _{G is} scanned in the Y-axis direction as the scanning direction. However, since the width of the projection region PR _G in the X-axis direction is smaller than the width of the substrate 60 in the X-axis direction, the entire projection 60 (transfer region 60a) cannot be exposed only by scanning the projection region PR _G in the Y-axis direction. Thus, in addition to scanning the projection region PR _G, Y-axis direction through scanning the projection region PR _G moved a distance in the X-axis direction α 'obtained by projection region PR _H, on the entire substrate 60 is exposed.

Similarly, referring to FIG. 6B, in the transfer region 60a on the substrate 60, the projection region PR _I is projected via the projection optical system 50, and such a projection region PR _{I is} scanned in the Y-axis direction as the scanning direction. Next, the projection area PR _J obtained by moving the projection area PR _I by the distance β' in the X-axis direction is scanned in the Y-axis direction. Further, the entire substrate 60 is exposed by scanning the projection region PR _K obtained by scanning the projection region PR _J in the X-axis direction by the distance β′ in the Y-axis direction.

In this manner, by patterning the projection regions PR _G and PR _H or a part of the projection regions PR _I to PR _K while scanning in the Y-axis direction, the pattern of the mask 40 can be transferred to the transfer region 60a on the substrate 60.

Further, the respective widths (exposure widths) of the projection regions PR _G and PR _H in the X-axis direction are the same, and the respective exposure widths of the projection regions PR ₁ to PR _K are the same. Here, in FIGS. 6A and 6B, since the opening 202 of the opening plate 20 has a trapezoidal shape, the shape of the end portion in each of the X-axis directions of the projection regions PR _G to PR _K has a linear shape. In other words, the control unit 90 controls the adjustment unit 70 such that the shape of each end portion of the projection regions PR _G to PR _K is determined to be a linear shape, and the shape of the respective end portions of the projection regions PR _G to PR _K is linear. . This is because when the opening 202 of the opening plate 20 has a trapezoidal shape, if the illuminance distribution in the projection area PR _G and the illuminance distribution in the projection area PR _H are connected, it becomes uniform in the entire substrate 60 (ie, The illuminance distribution of the illuminance is not uniform. Similarly, when the illuminance distribution in the projection area PR _I , the illuminance distribution in the projection area PR _J , and the illuminance distribution in the projection area PR _K are connected, a uniform illuminance distribution is obtained in the entire substrate 60 .

An example of a specific configuration of the adjustment portion 70 when the opening 202 of the aperture plate 20 has a trapezoidal shape will be described with reference to FIGS. 8A and 8B. The adjustment unit 70 includes, for example, a light shielding plate 702 disposed on the opening plate 20, an actuator 704, and a rod 706. The visor 702 is thin in thickness in the Z-axis direction The plate has an end surface 702b having a linear shape. The actuator 704 has a function of applying a force to the end surface 702b of the light shielding plate 702 via the telescopic rod 706. In the present embodiment, the actuator 704 moves the linear end surface 702b in a state in which the position of the end surface 702b corresponding to one of the ends of the opening 202 in the Y-axis direction is fixed. Specifically, the actuator 704 rotates the end surface 702b of the linear shape with the position of the end surface 702b corresponding to one of the ends of the opening 202 in the Y-axis direction as the rotation axis. Thereby, the shape of the end portion in the X-axis direction of the projection region can be changed (controlled) into a linear shape (FIG. 8A) shown in FIG. 6A and a linear shape (FIG. 8B) shown in FIG. 6B.

In this manner, the exposure apparatus 1 can control (adjust) the shape of the end portion of each projection region in the Y-axis direction according to the pattern of the mask 40 (that is, the connection width determined according to the pattern). Therefore, the exposure apparatus 1 can suppress the occurrence of unevenness in illuminance, and can transfer the pattern of the mask 40 to the substrate 60 with high precision, thereby providing a high-capacity, economical, high-quality device (semiconductor integrated circuit component, Liquid crystal display elements, etc.). Further, the apparatus transmits a project of exposing a substrate (wafer, glass plate, or the like) coated with a photoresist (photosensitive agent) by using the exposure device 1, and developing a substrate to be exposed and other well-known Engineering to manufacture.

The preferred embodiments of the present invention have been described above, and the present invention is not limited thereto, and various modifications and changes can be made therein without departing from the spirit and scope of the invention. In the present embodiment, the shape of the end portion of the projection region is adjusted by the adjustment portion, but the aperture plate having the opening corresponding to the shape of the projection region adjusted by the adjustment portion also constitutes the present invention. One aspect. For example, an opening plate for defining a projection area as an arc-shaped opening and an end portion thereof having a curved opening constitutes one aspect of the present invention.

The invention has been described above with reference to exemplary embodiments, but the invention is not limited to the disclosed exemplary embodiments. The following claims are to be accorded the description of the claims

60‧‧‧Substrate

60a‧‧‧Transfer area

PRA‧‧‧Projection area

PRB‧‧‧Projection area

OR‧‧‧Overlapping area

Claims (8)

An exposure apparatus including a projection optical system that projects a pattern of a mask onto a substrate, wherein the exposure device overlaps a portion of a projection area formed on the substrate via the projection optical system in a first direction The substrate is moved in synchronization with the second direction orthogonal to the first direction, and the pattern is transferred to the substrate. The exposure apparatus includes an opening plate having an opening for defining the projection area, and an adjustment a portion of the opening is shielded from light, and the shape of the end portion in the first direction of the projection region is adjusted; and the acquisition portion acquires a connection width in the first direction of the overlapping region in which the projection region overlaps; The shape of the end portion in the first direction of the projection region is determined based on the connection width obtained by the acquisition unit, and the unevenness of the illuminance distribution formed on the substrate is reduced without changing the exposure width. Controlling the adjustment unit such that an end portion of the projection region in the first direction is determined by the determination shape. The exposure apparatus according to claim 1, wherein the opening has an arc shape, and the control unit determines a shape of an end portion of the projection region in the first direction as a curved shape. The exposure apparatus according to claim 2, wherein, in the opening corresponding to the circular arc shape, a radius of the projection area of a predetermined arc shape on the substrate is R, and the first direction of the projection area is The width of the projection area is set to 2V, the width of the projection area in the second direction is S, and the connection width obtained by the acquisition unit is T, and the expression Y defining the curve shape is Y=R-( R ² -X ² ) ^1/2 + S/T (VX) is expressed. The exposure apparatus according to claim 2, wherein the adjustment unit includes: a light shielding plate having an end surface having a variable shape; and an actuator for fixing the first direction of the opening having the circular arc shape The shape of the end surface is changed in a state where the end of the end portion of the middle end corresponds to the end surface. The exposure apparatus according to claim 1, wherein the opening has a trapezoidal shape, and the control unit determines a shape of an end portion of the projection region in the first direction as a linear shape. The exposure apparatus according to claim 5, wherein the adjustment portion includes: a light shielding plate having a linear end surface; and an actuator for fixing the end of the first direction to the opening of the trapezoidal shape The end surface is moved in a state in which the one end of the portion corresponds to the position of the end surface. An exposure method for projecting a portion of a predetermined projection area on a substrate in a first direction by a projection optical system that projects a pattern of a mask onto a substrate, and the mask and the substrate are in the first direction The orthogonal second direction is synchronously moved to transfer the above pattern to the above base The exposure method of the present invention includes a first step of obtaining a connection width in the first direction of the overlapping region in which the projection regions overlap, and a second step of obtaining a connection width obtained in the first step. Determining the shape of the end portion in the first direction of the projection region so as to reduce the unevenness of the illuminance distribution formed on the substrate without changing the exposure width, and controlling the first portion of the projection region The end in one direction becomes the determined shape. A method of producing an element, comprising: a step of exposing a substrate using an exposure apparatus according to any one of claims 1 to 6; and a step of developing the exposed substrate.