TWI599003B - Thermally enhanced wiring board having metal slug and moisture inhibiting cap incorporated therein and method of making the same - Google Patents

Description

Heat dissipation gain type circuit board with built-in metal block and moisture proof cover and preparation method thereof

The present invention relates to a circuit board, and more particularly to a heat dissipation gain type circuit board having a moisture proof cover, wherein the moisture proof cover covers an interface between the metal block and the surrounding plastic.

Semiconductor devices are susceptible to performance degradation and short lifetimes, and even at high operating temperatures, immediate failures can occur. Therefore, when assembling a semiconductor wafer in a package, for its operational reliability, a heat dissipation gain circuit board is usually required to provide an effective heat dissipation path so that thermal energy generated by the wafer can be conducted to the surrounding environment.

A good and efficient heat sinking type circuit board typically includes a metal portion and a resin portion that provides a heat dissipating passage, and the resin portion allows a line to be deposited thereon to provide electrical signal routing. However, since the contact areas of the two materials are small and fragile, the coefficient of thermal expansion (CTE) is also largely mismatched. Under thermal cycling, the metal/resin interface is prone to cracking or delamination. The phenomenon that this type of circuit board is quite unreliable in practical use is due to the fact that a large amount of moisture may permeate the cracked interface to damage the assembled wafer.

The main object of the present invention is to provide a circuit board having at least one moisture-proof cover covering an interface between two materials whose thermal expansion coefficients are not matched, so as to avoid penetration of cracks in the interface due to mismatch of thermal expansion coefficients. Moisture, thereby improving the reliability of the semiconductor package.

Another object of the present invention is to provide a circuit board in which a metal block is embedded in a resin core layer, so that the resin core layer can provide a platform for depositing a wire, and the metal block can be used as an optimal heat conducting member, thereby improving The thermal performance of the semiconductor package and the reliability of its operation.

In accordance with the above and other objects, the circuit board of the present invention has a metal block, a resin core layer, at least one moisture barrier cover, and a plurality of wires. The metal block provides a primary thermal conduction path for the semiconductor wafer such that the thermal energy generated by the wafer can be conducted out. The metal core layer, the moisture barrier cover, and the resin core layer mechanically supported by the wires are covered and surround the side walls of the metal block and serve as spacers between the wires and the metal block. The moisture-proof cover extending laterally from the metal block to the resin core layer seals the interface between the metal and the plastic and acts as a moisture barrier to prevent moisture from penetrating through the interface. The wires extending laterally on the resin core layer provide electrical contacts for connecting the wafers, and provide signal transmission and electrical routing of the circuit boards.

In another aspect, the present invention provides a method for fabricating a heat dissipation gain type circuit board, the method comprising: providing a metal block having a first direction opposite to each other and a second direction respectively Flattening one of the first side and the second side; providing a stack structure comprising a first metal layer, a second metal layer, a bonding film, and a first opening, wherein the bonding film Provided between the first metal layer and the second metal layer, the first opening extends through the first metal layer, the bonding film, and the second metal layer, the first metal layer and the The second metal layer has a flat outer surface in each of the first direction and the second direction; the metal block is embedded in the first opening of the stacked structure, and the stacked structure and the metal block A gap is left between, and then the bonding film is cured to form a resin core layer including a first side connected to the first metal layer, and connected to the second metal layer and the first One side opposite to the second side Wherein, the stacked structure is attached to the sidewall of the metal block by extruding from the bonding film into the stack structure and the adhesive between the metal blocks; the removal is extruded An excess portion of the adhesive such that the opposite exposed surfaces of the adhesive are in the first direction and the second direction, substantially the first side and the second side of the metal block, and the The outer surfaces of the first metal layer and the second metal layer are coplanar; forming a plurality of wires extending laterally on the second side of the resin core layer; and forming a first moisture barrier cover, the first A moisture barrier extends laterally from the first side of the metal block to the first metal layer on the resin core layer to completely cover the exposed adhesive from the first direction.

In another aspect, a method for fabricating a heat dissipation gain type circuit board includes the steps of: attaching a metal block to a carrier film, wherein the metal block is in a first direction opposite to each other and a second direction Each of the upper portions has a flat first side and a second side; a buried plastic is formed to cover the metal block and the carrier film; and a portion of the embedding plastic is removed to form a resin core layer Having a first side in the first direction and a second side coplanar with the second side of the metal block in the second direction, and removing the carrier film; forming a plurality of wires, The wires extend laterally on the second side of the resin core layer; and a first moisture barrier cover is formed, the first moisture barrier cover completely covering the interface between the metal block and the resin core layer in the first direction .

The order of the above steps is not limited to the above, and may be changed or rearranged according to the desired design, unless specifically stated, or the phrase "following" or the steps must be followed.

The heat dissipation gain type circuit board according to the present invention has a number of advantages. For example, depositing the moisture-proof cover to seal the interface between the metal and the plastic can establish a moisture-proof barrier, so that the moisture-proof cover can prevent moisture from penetrating into the interior of the semiconductor body through the external environment. Thereby the reliability of the group can be improved. Bonding the metal block to the resin core layer provides a platform for depositing electrical routes, and provides a heat transfer plane to which the semiconductor device is attached, thereby ensuring heat dissipation of the group and operational reliability thereof.

The above and other features and advantages of the present invention will become more apparent from the detailed description of the preferred embodiments.

In the following, examples will be provided to explain in detail embodiments of the invention. The advantages and effects of the present invention will be more apparent by the disclosure of the present invention. The drawings attached hereto are simplified and are used for illustration. The number, shape and size of the components shown in the drawings can be modified as the case may be, and the configuration of the components may be more complicated. Other variations and modifications can be made without departing from the spirit and scope of the invention as defined in the invention.

[Example 1]

1-11 is a schematic diagram of a method for fabricating a heat dissipation gain type circuit board according to an embodiment of the present invention, the heat dissipation gain type circuit board includes a metal block, a resin core layer, a plurality of moisture proof covers, and a plurality of wire.

1 is a cross-sectional view of a metal block 10 having an opposite flat first side 101 and a second side 102. The metal block 10 may be composed of copper, aluminum, nickel, or other metallic materials. In this embodiment, the metal block 10 is a copper block having a thickness of 0.4 mm.

2 is a cross-sectional view of a stacked structure 20 on a carrier film 31, and the stacked structure 20 has an opening 203. The stack structure 20 includes a first metal layer 212, a bonding film 214, and a second metal layer 217. The opening 203 is formed by punching through the first metal layer 212, the bonding film 214, and the second metal layer 217, and has a size almost the same as or slightly larger than the metal block 10. Additionally, the opening 203 can be formed by laser cutting or a combination of laser cutting and wet etching. The carrier film 31 is usually a tape, and the first metal layer 212 is attached to the carrier film 31 by the adhesive property of the carrier film 31. In the stack structure 20 , the bonding film 214 is disposed between the first metal layer 212 and the second metal layer 217 . The first metal layer 212 and the second metal layer 217 are generally composed of copper, and each has two flat surfaces that face upward and downward, respectively. The bonding film 214 can be composed of various dielectric films or prepregs formed of a variety of organic or inorganic electrically insulating materials. For example, the bonding film 214 may initially be a heat-cured epoxy prepreg in a resin form impregnated with a reinforcing material, and partially cured to an intermediate state. The epoxy resin may be FR-4, but other, for example, polyfunctional and bismaleimide triazine (BT) are also suitable for use herein. Cyanate esters, polyimides, and polytetrafluoroethylene (PTFE) are also suitable for specific applications. The reinforcing material may be E-glass, but others such as S-glass, D-glass, quartz, kevlar aramid, and paper are applicable. The reinforcing material may also be a woven fabric, a non-woven fabric, or an irregular microfiber. A filler such as cerium oxide (powdered fused silica) may be added to the prepreg to improve its thermal conductivity, heat resistance, and thermal expansion matching. Commercial prepregs are also suitable for use herein, such as the SPEED BOARD prepreg manufactured by W. L. Gore & Associates of Eau Claire, Wisconsin. In this embodiment, the bonding film 214 is a prepreg non-cured sheet of a B-stage uncured epoxy resin, and the first metal layer 212 and the second metal layer 217 are respectively 0.2 mm and 0.025 mm in thickness. The copper layer.

3 is a cross-sectional view showing the structure in which the metal block 10 is attached to the carrier film 31. The metal block 10 is aligned with the opening 203 of the stack structure 20, and the first side 101 faces the carrier film 31 and is embedded in the opening 203 but not in contact with the stack structure 20. Therefore, the opening 203 between the metal block 10 and the stacked structure 20 has a slit 207 which laterally surrounds the metal block 10 and is laterally surrounded by the stacked structure 20. In the illustration, the metal block 10 is attached to the carrier film 31 by the adhesive nature of the carrier film 31. Further, the metal block 10 can be attached to the carrier film 31 by an additional adhesive.

4 and 5 are a cross-sectional view and a top perspective view, respectively, of an adhesive 215 extruded from the bonding film 214 and filling the slit 207. The bonding film 214 is pressed by heat and pressure, and a part of the adhesive in the bonding film 214 flows into the slit 207. The bonding film 214 is extruded by applying a downward pressure to the second metal layer 217 and/or applying an upward pressure to the carrier film 31, thereby bonding the first metal layer 212 and the second layer. The metal layers 217 are moved toward each other while applying pressure to the bonding film 214 and applying heat to the bonding film 214. The bonding film 214 can be arbitrarily formed under heat and pressure. Therefore, the bonding film 214 interposed between the first metal layer 212 and the second metal layer 217 is compressed, forced to change its original shape, and flows into the slit 207. The first metal layer 212 and the second metal layer 217 are continuously moved toward each other, and the bonding film 214 is maintained between the first metal layer 212 and the second metal layer 217, and fills a space between them. . At the same time, the adhesive 215 extruded from the bonding film 214 fills the slit 207. In this illustration, the adhesive 215 extruded from the bonding film 214 also rises slightly above the opening 203 and overflows to the upper surface of the metal block 10 and the second metal layer 217. If the thickness of the bonding film 214 is slightly larger than the desired thickness, this phenomenon may occur, and therefore, the adhesive 215 extruded from the bonding film 214 forms a thin coating on the metal block 10 and the The upper surface of the second metal layer 217. When the second metal layer 217 is coplanar with the upper surface of the metal block 10, the above action will be stopped, but the bonding film 214 and the extruded adhesive 215 will continue to be heated, thereby the B-stage. The molten uncured epoxy resin is converted into a C-stage cured or hardened epoxy resin.

At this time, the stack structure 20 is bonded to the side wall of the metal block 10 by the adhesive 215 extruded from the bonding film 214. The cured film 214 provides a secure mechanical bond between the first metal layer 212 and the second metal layer 217. Thereby, the metal block 10 and the resin core layer 21 are bonded by the adhesive 215 interposed therebetween. The resin core layer 21 has a first side 201 connected to one of the first metal layers 212 and a second side 202 connected to the opposite side of the second metal layer 217.

6 and 7 are cross-sectional views and top perspective views, respectively, of removing excess adhesive from the metal block 10 and the second metal layer 217. This excess adhesive can be removed by polishing/grinding. After polishing/polishing, the metal block 10, the second metal layer 217, and the adhesive 215 extruded from the bonding film 214 are substantially coplanar on a smooth polished/polished upper surface.

Fig. 8 is a cross-sectional view showing the structure of the carrier film 31. The carrier film 31 is separated from the metal block 10, the first metal layer 212, and the extruded adhesive 215 to expose the metal block 10 and the first metal layer 212. Accordingly, the adhesive 215 has opposite exposed surfaces, and substantially the first side 101 and the second side 102 of the metal block 10 and the first metal in the downward direction and the upward direction, respectively. The planar outer surfaces of layer 212 and second metal layer 217 are coplanar.

9 , 10 , and 11 are a cross-sectional view, a bottom perspective view, and a top perspective view, respectively, of the first moisture-proof cover 42 , the second moisture-proof cover 45 , and the wires 46 . The bottom surface of the structure can be metallized to form a bottom cladding layer 41 (typically a copper layer) which can be formed into a single layer by a variety of methods such as electroplating, electroless plating, evaporation, sputtering, or combinations thereof. Or multilayer structure. For example, the structure may be first immersed in an activator solution such that the bottom surface of the structure has catalytic properties for electroless copper plating, followed by electroless plating of a thin copper film as a seed crystal on which the second copper film is plated. The layer, the second copper film is subsequently plated onto the seed layer to a desired thickness. Alternatively, the seed layer may be sputtered onto the bottom surface of the structure by sputtering a film such as titanium/copper prior to plating the copper layer on the seed layer. Accordingly, the first moisture-proof cover 42 composed of the first metal layer 212 and the bottom cladding layer 41 includes a selected portion extending from the first side 101 of the metal block 10 to the The first metal layer 212 on the resin core layer 21. In this illustration, the first moisture barrier cover 42 is an unpatterned metal layer and has a first thickness T1 (about 0.5 to 50 microns) at the point of contact with the extruded adhesive 215. Contacting the resin core layer 21 has a second thickness T2, which further includes the first metal layer 212 having a thickness greater than the first thickness T1 and having a flat surface facing one of the downward directions. For convenience of illustration, the metal block 10, the first metal layer 212, and the bottom cladding layer 41 are illustrated as a single layer. Since copper is a homogeneous coating, the boundaries between the metal layers (as indicated by the dashed lines) may be difficult or impossible to detect. However, the boundary between the bottom cladding layer 41 and the adhesive 215 that is extruded is clearly visible.

In addition, the upper surface of the structure can be metallized by the same activator solution, electroless copper plating, and electroplated copper layer, thereby forming a top cladding layer 44, when the desired thickness is reached, A patterning process is performed to form the second moisture barrier cover 45 and the wires 46. The second moisture-proof cover 45 composed of the top cladding layer 44 and the second metal layer 217 includes the second metal layer extending from the second side 102 of the metal block 10 to the resin core layer 21. 217, and having a third thickness T3 (about 0.5 to 50 micrometers) at the adhesive 215 where the contact is extruded, and having a fourth thickness T4 at the place of contacting the resin core layer 21, which further includes the second The metal layer 217 has a thickness greater than the third thickness T3 and a flat surface having a face-up direction. The wires 46 formed by the top cladding layer 44 and the second metal layer 217 are in contact with the second side 202 of the resin core layer 21 and laterally on the second side 202 of the resin core layer 21 Extending and having a combined thickness of the second metal layer 217 and the top cladding layer 44. The metal patterning technique includes wet etching, electrochemical etching, laser assisted etching, and combinations thereof, in combination with an etching mask (not shown) to define the second moisture proof cover 45 and the Wire 46.

Accordingly, as shown in FIG. 9, FIG. 10, and FIG. 11, the completed heat dissipation gain type circuit board 100 includes a metal block 10, a resin core layer 21, an adhesive 215 extruded, and a first moisture proof cover. 42. A second moisture barrier cover 45 and a wire 46. The resin core layer 21 covers and surrounds the sidewall of the metal block 10, and is mechanically coupled to the sidewall of the metal block 10 by the adhesive 215 extruded between the metal block 10 and the resin core layer 21. connection. The first moisture-proof cover 42 and the second moisture-proof cover 45 completely cover the adhesive 215 between the metal block 10 and the resin core layer 21, and the interface between the metal block 10 and the adhesive 215, and They extend laterally on the upper and lower opposite sides of the resin core layer 21, respectively. The wire 46 is spaced from the second moisture barrier 46 and provides an electrical contact between the connection wafer and the external connection over the structure.

FIG. 12 is a cross-sectional view showing a semiconductor device 51 electrically connected to a semiconductor package 110 of the heat dissipation gain type wiring board 100 shown in FIG. The semiconductor device 51, which is shown as a wafer, is mounted on the second moisture barrier cover 45, and is electrically connected to the wires 46 of the heat dissipation gain type circuit board 100 by wire bonding 61. Further, a cover body 71 is attached to the heat dissipation gain type wiring board 100, and the semiconductor device 51 is sealed therein from above. Accordingly, even if the thermal expansion mismatch between the metal block 10 and the adhesive 215 causes cracks, the first moisture-proof cover 42 of the circuit board 100 prevents moisture of the external environment from penetrating into the semiconductor body 110 via the crack. Internal. In addition, the heat generated by the semiconductor device 51 can be conducted to the metal block 10 and further spread to the first moisture-proof cover 42 having a heat dissipation area larger than the metal block 10.

[Embodiment 2]

13 to FIG. 17 are schematic diagrams showing another method of fabricating a heat dissipation gain type circuit board according to another embodiment of the present invention, wherein the heat dissipation gain type circuit board is formed by another stacked structure to form a resin core layer.

For the purpose of brief description, any description of the same application in the above-described embodiment 1 is hereby made, and the same description is not repeated.

Figure 13 is a cross-sectional view showing the structure of a stacked structure 20 on a carrier film 31. The stack structure 20 includes a first laminate 221, a laminate film 224, and a second laminate 226. The stack structure 20 has an opening 203 extending through the first laminate 221, the conforming film 224, and the second laminate 226. In the illustration, the first laminate 221 includes a first metal layer 222 disposed on a first dielectric layer 223, and the second laminate 226 includes a second metal layer 227. It is disposed on a second dielectric layer 228. The first dielectric layer 223 and the second dielectric layer 228 are typically composed of epoxy, glass epoxy, polyimide, or the like, and have a thickness of 50 microns. The first metal layer 222 and the second metal layer 227 are typically composed of copper and have a thickness of 35 microns. In the stack structure 20, the bonding film 224 is disposed between the first laminate 221 and the second laminate 226. The first metal layer 222 of the first laminate 221 and the second metal layer 227 of the second laminate 226 face downwardly and upwardly, respectively. The stacked structure 20 is attached to the carrier film 31 by the first metal layer 222 of the first laminate 221 in contact with the carrier film 31 by the adhesive property of the carrier film 31.

Fig. 14 is a cross-sectional view showing the structure in which the metal block 10 shown in Fig. 1 is attached to the carrier film 31. The metal block 10 is embedded in the opening 203 of the stack structure 20, and the first side 101 faces the carrier film 31 and is attached to the carrier film 31 without contacting the stack structure 20. on. Therefore, the metal block 10 and the opening 203 between the stacked structures 20 have a slit 207 therein.

Figure 15 is a cross-sectional view showing the structure in which one of the adhesives 225 is extruded from the bonding film 224. The bonding film 224 is pressed by applying heat and pressure, and a part of the adhesive in the bonding film 224 flows into the slit 207. After the gap 207 is filled with the extruded adhesive 225, the adhesive film 224 and the adhesive 225 that is extruded are cured. Therefore, the metal block 10 is connected to a resin core layer 22 by the adhesive 225 extruded in the slit 207. In this embodiment, the resin core layer 22 includes the first dielectric layer 223, the cured bonding layer 224, and the second dielectric layer 228, and has one of the first metal layers 222 connected thereto. The first side 201 is coupled to one of the opposite second sides 202 of the second metal layer 227. The cured film 224 is integrated with the first dielectric layer 223 of the first laminate 221 and the second dielectric layer 228 of the second laminate 226, and the first laminate is provided A solid mechanical connection between 221 and the second laminate 226. The adhesive 225 extruded in the slit 207 provides a firm mechanical connection between the metal block 10 and the resin core layer 22. In the illustration, the adhesive 225 extruded from the bonding film 224 is slightly higher than the opening 203 and overflows to the upper surface of the metal block 10 and the second metal layer 227.

Figure 16 is a cross-sectional view showing the structure in which the excess adhesive is removed and the carrier film 31 is removed. On the metal block 10 and the second metal layer 227, the excess adhesive is removed by polishing/grinding and forms a flat upper surface that is polished/polished. The carrier film 31 is separated from the metal block 10, the first metal layer 222, and the extruded adhesive 225 to expose the metal block 10 and the first metal layer 222. Accordingly, the adhesive 225 has two opposite exposed surfaces that are substantially opposite to the first and second sides 101, 102, and the first and second sides of the metal block 10 in the downward direction and the upward direction, respectively. The outer surfaces of the metal layers 222, 227 are coplanar.

Figure 17 is a cross-sectional view showing the structure of the first moisture-proof cover 42, the second moisture-proof cover 45, and the wires 46. The first moisture-proof cover 42 is formed by depositing a bottom cladding layer 41 which is joined to the bottom of the first metal layer 222. Accordingly, the first moisture-proof cover 42 includes the first metal layer 222 and the bottom cladding layer 41, and contacts and covers the metal layer 10, the resin core layer 22, and the adhesive 225 extruded from the bottom. . In addition, the top surface of the structure is metallized to form a top cladding layer 44, and then the second moisture barrier cover 45 and the wires 46 are formed by a metal patterning process. The second moisture-proof cover 12 is in contact with and covers the metal block 10, the resin core layer 22, and the adhesive 225 that is extruded from above. The wires 46 are in contact with the second side 202 of the resin core layer 22 and extend laterally on the second side 202 of the resin core layer 22.

Therefore, as shown in FIG. 17, the completed heat dissipation gain type circuit board 200 includes a metal block 10, a resin core layer 22, an extruded adhesive 225, first and second moisture proof covers 42, 45, and Wire 46. The resin core layer 22 is mechanically joined to the metal block 10 by the adhesive 225 that is extruded. The first and second moisture-proof covers 42 and 45 completely cover the adhesive 225 and the interface between the metal block 10 and the adhesive 225 from above and below, and extend laterally on the resin core layer 22. The wire 46 is spaced apart from the second moisture barrier cover 45 and provides an electrical contact between the wafer and the external connection over the structure.

[Example 3]

18 to FIG. 23 are schematic diagrams showing a method of fabricating a heat dissipation gain type circuit board according to still another embodiment of the present invention, wherein the heat dissipation gain type circuit board has a laterally covered metal block and a buried plastic.

For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

Figure 18 is a cross-sectional view showing the structure of a metal plate 242 on a carrier film 31. The metal plate 242 includes an opening 249 and is attached to the carrier film 31 by the adhesive nature of the carrier film 31. The metal plate 242 may be composed of copper, aluminum, nickel, or other metallic materials. In this embodiment, the metal plate 242 may be a copper plate having a thickness of 0.2 mm. The opening 249 can be formed by punching, stamping, etching, or mechanical processing, and is approximately the same size or slightly larger than one of the metal blocks 10 that are subsequently disposed.

Fig. 19 is a cross-sectional view showing the structure in which the metal block 10 shown in Fig. 1 is attached to a carrier film 31. The metal block 10 is partially embedded in the opening 249 of the metal plate 242 and attached to the carrier film 31 with its first side 101 contacting the carrier film 31.

Figure 20 is a cross-sectional view showing the structure of a buried plastic 244. The embedding plastic 244 may be formed by a molding process, or may be prepared by other methods such as laminating epoxy resin or polyimine. The embedding plastic 244 covers the metal block 10 and the metal plate 242 from above, and is laterally covered and conformally coated on the sidewall of the metal block 10, and extends laterally from the metal block 10 to the peripheral periphery of the structure. . In addition, the embedding plastic 244 extends into the gap between the metal block 10 and the metal plate 242 and is in contact with the carrier film 31.

Figure 21 is a cross-sectional view showing the second side 102 of the metal block 10 exposed from above. The upper portion of the embedding plastic 244 can be removed by polishing. After polishing, the metal block 10 and the embedding plastic 244 are substantially coplanar with each other on a smooth polished upper surface. Accordingly, the metal block 10 is bonded to the resin core layer 24, and the resin core layer 24 has a first side 201 attached to one of the metal plates 242 and a second side 202 opposite thereto, the second side 202 The line is substantially coplanar with the second side 102 of the metal block 10 in the upward direction.

Figure 22 is a cross-sectional view showing the structure after the carrier film 31 is removed. The carrier film 31 is separated from the metal block 10 and the metal plate 242 to expose the first side 101 of the metal block 10 and the metal plate 242.

23 is a cross-sectional view showing the structure of the first moisture-proof cover 42, the second moisture-proof cover 45, and the wires 46. The first and second moisture barriers 42, 45, and wires 46 can be deposited to a desired thickness by a sputtering process followed by an electrolytic plating process. When the desired thickness is reached, a metal patterning process is performed to form the second moisture barrier cover 45 and the wire 46. The first moisture barrier cover 42 is an unpatterned metal layer that includes the metal plate 242 and completely covers the interface between the metal block 10 and the embedding plastic 244 from below. In the illustration, the first moisture-proof cover 42 has a first thickness T1 (about 0.5 to 50 micrometers) adjacent to the interface between the metal block 10 and the buried plastic 244, and includes the metal plate 242. One of the thicknesses is a second thickness T2 such that the second thickness T2 is greater than the first thickness T1. The second moisture-proof cover 45 is spaced apart from the wires 46 and completely covers the interface between the metal block 10 and the embedding plastic 244 from above, and has a thickness of 0.5 to 50 microns. The wires 46 extend laterally on the second side 202 of the resin core layer 24 and have a thickness of 0.5 to 50 microns.

Accordingly, as shown in FIG. 23, the completed heat dissipation gain type wiring board 300 includes a metal block 10, a resin core layer 24, first and second moisture proof covers 42, 45, and wires 46. The resin core layer 24 covers and surrounds the sidewall of the metal block 10 and joins the metal block 10. The first moisture barrier cover 42 extends from the first side 101 of the metal block 10 to a peripheral edge of the circuit board 300 and has an inconsistent thickness. In addition, the structure may not form the metal plate 242, so that the first moisture-proof cover 42 may have a uniform thickness. The second moisture barrier cover 45 extends laterally on the second side 102 of the metal block 10 and the second side 202 of the resin core layer 24 and is spaced from the peripheral edge of the circuit board 300. The wires 46 are spaced apart from the second moisture barrier cover 45 and provide electrical contacts connecting the wafer and the external connections over the structure.

[Example 4]

24 to FIG. 30 are schematic diagrams showing another method of fabricating a heat dissipation gain type circuit board according to still another embodiment of the present invention, the heat dissipation gain type circuit board having metal studs as vertical electrical connections.

For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

Figure 24 is a cross-sectional view showing the structure of a stacked structure 20 on a carrier film 31. In this embodiment, the stack structure 20 has a stack structure 20 extending through the first laminate 221, the bonding film 224, and the first and second openings 204, 205 of the second laminate 226. The 20 series is similar to the structure shown in FIG.

Fig. 25 is a cross-sectional view showing the structure in which the metal block 10 and the metal stud 80 shown in Fig. 1 are attached to the carrier film 31. The metal block 10 is embedded in the first opening 204 of the stacked structure 20, and the metal stud 80 is embedded in the second openings 205 of the stacked structure 20. Each of the metal studs 80 has an opposite flat first side 801 and a second side 802 that are substantially coplanar with the first side 101 and the second side 102 of the metal block 10, respectively. The metal block 10 and the metal stud 80 are attached to the carrier film 31 by facing the first sides 101 and 801 of the carrier film 31. The metal stud 80 can be constructed of any electrically conductive material. In this embodiment, the metal stud 80 is a copper post having a thickness of 0.4 mm.

26 is a cross-sectional view showing a structure in which an adhesive 225 is extruded from the bonding film 224 into the metal block 10 and the stacked structure 20 and between the metal stud 80 and the gap 207 between the stacked structures 20. The bonding film 224 is pressed by applying heat and pressure, and a part of the adhesive in the bonding film 224 flows into the slit 207. After the extruded adhesive 225 fills the slits 207, the adhesive film 224 and the adhesive 225 that is extruded are then cured. Accordingly, the metal block 10 and the metal stud 80 are joined to the resin core layer 22 by the adhesive 225 extruded in the slit 207. In this illustration, the resin core layer 22 includes the first dielectric layer 223, the cured bonding film 224, and the second dielectric layer 228, and has a bonding to the first metal layer 222. A first side 201, and a second side 202 opposite to the second metal layer 227. The adhesive 225 extruded in the slit 207 provides a secure mechanical connection between the metal block 10 and the resin core layer 22 and between the metal stud 80 and the resin core layer 22. The adhesive 225 extruded from the bonding film 224 also slightly exceeds the first and second openings 204, 205 and overflows to the metal block 10, the second metal layer 227, and the metal studs 80 on the surface.

Figure 27 is a cross-sectional view showing the structure after removing excess adhesive and the carrier film 31. The excess adhesive on the metal block 10, the second metal layer 227, and the metal studs 80 is removed by polishing/grinding to form a smoothed/polished smooth upper surface. The carrier film 31 is separated from the metal block 10, the first metal layer 222, the metal studs 80, and the adhesive 225 that is extruded. Therefore, the adhesive 225 has two opposite exposed surfaces, which are substantially opposite to the first side 101 and the second side 102 of the metal block 10 and the metal studs 80 in the downward direction and the upward direction, respectively. The first side 801 and the second side 802, and the outer surfaces of the first metal layer 222 and the second metal layer 227 are coplanar.

28, 29, and 30 are a cross-sectional view, a bottom perspective view, and a top perspective view, respectively, showing the first and second moisture-proof covers 42, 45, and the wires 46. The bottom surface of the structure is metallized to form a bottom cladding layer 41, which is then patterned by a metal patterning process to form a plurality of first moisture barrier covers 42 that are separated from one another. One of the first moisture barrier covers 42 includes a selected portion extending laterally from the first side 101 of the metal block 10 to the first metal layer 222 on the resin core layer 22, and other The first moisture barrier cover 42 includes a selected portion extending laterally from the first side 801 of the metal stud 80 to the first metal layer 222 on the resin core layer 22. In addition, the upper surface of the structure is metallized to form a top cladding layer 44, which is then formed by a metal patterning process to form the second moisture barrier cover 45 and the wires 46. The second moisture barrier cover 45 includes a selected portion that extends laterally from the second side 102 of the metal block 10 to the second metal layer 227 on the resin core layer 22. The wire 46 contacts the resin core layer 22 to the second side 202 and extends laterally on the second side 202 of the resin core layer 22 and has a selected portion from the metal posts 80 The second side 802 extends laterally to the second metal layer 227 on the resin core layer 22.

Accordingly, as shown in FIGS. 28, 29, and 30, the completed heat dissipation gain type circuit board 400 includes a metal block 10, a metal stud 80, a resin core layer 22, and an adhesive that is extruded. 225. A first moisture barrier cover 42, a second moisture barrier cover 45, and a wire 46. The resin core layer 22 covers and surrounds the metal block 10 and the sidewalls of the metal studs 80, and is between the metal block 10 and the resin core layer 22 and between the metal studs 80 and the resin core layer 22. The adhesive 225 that is extruded is mechanically coupled to the metal block 10 and the metal studs 80. The first moisture-proof cover 42 completely covers the adhesive 225, the interface between the metal block 10 and the adhesive 225, and the interface between the metal studs 80 and the adhesive 225, and more The resin core layer 22 extends laterally. The second moisture-proof cover 45 completely covers the adhesive 225 between the metal block 10 and the resin core layer 22, and the interface between the metal block 10 and the adhesive 225 from above, and is further on the upper side of the resin core layer 22. Extend. The wires 46 extend laterally from the upper side of the resin core layer 22 and more completely cover the adhesive 225 between the metal studs 80 and the resin core layer 22, and the metal studs 80 and the same The interface between the adhesives 225 is electrically connected to the metal studs 80.

[Example 5]

31 to FIG. 34 are schematic diagrams showing a method of fabricating a heat dissipation gain type circuit board according to another embodiment of the present invention, wherein the heat dissipation gain type circuit board has a buried plastic that laterally covers the metal block and the Side walls of metal studs.

For the purpose of brevity, the description of any of the above embodiments that can be used for the same application is the same, and the same description is not repeated.

31 is a cross-sectional view showing the structure of the metal block 10 and the metal stud 80 shown in FIG. 1 on a carrier film 31. The metal block 10 and the metal studs 80 are attached to the carrier film 31 by the first sides 101 and 801 contacting the carrier film 31.

Figure 32 is a cross-sectional view showing the structure of a buried plastic 244 on the structure. The embedding plastic 244 covers the metal block 10 and the metal studs 80 from above and laterally covers, surrounds, and conforms to the metal block 10 and the sidewalls of the metal studs 80.

Figure 33 is a cross-sectional view showing the structure of the carrier film 31 and the portion of the embedding plastic 244 removed. The embedding plastic 244 is ground until the upper surface of the embedding plastic 244 is substantially coplanar with the second side 102 of the metal block 10 and the second side 802 of the metal studs 80. Therefore, the metal block 10 and the metal studs 80 are bonded to the resin core layer 24, and the resin core layer 24 has substantially the first side 101 of the metal block 10 and the metal studs 80, respectively. The first side 201 and the second side 202 are opposite to the common plane of the second side 102, 802.

Figure 34 is a cross-sectional view showing the structure of the first and second moisture-proof covers 42, 45, and the wires 46. The first and second moisture barriers 42, 45, and wires 46 can be deposited to a desired thickness by a sputtering process followed by an electrolytic plating process. When the desired thickness is reached, a metal patterning process is performed to form the first moisture barrier cover 42, the second moisture barrier cover 45, and the wires 46. One of the first moisture-proof covers 42 extends from the first side 101 of the metal block 10 laterally to the first side 201 of the resin core layer 24, and the other first moisture-proof cover 42 is The first side 801 of the metal studs 80 extends laterally to the first side 201 of the resin core layer 24 from below. The second moisture barrier cover 45 is spaced apart from the wires 46 and extends laterally from the second side 102 of the metal block 10 to the second side 202 of the resin core layer 24. The wires 46 extend laterally from the second side 802 of the metal studs 80 to the second side 202 of the resin core layer 24.

Accordingly, as shown in FIG. 34, one of the heat dissipation gain type circuit boards 500 includes a metal block 10, a metal stud 80, a resin core layer 24, first and second moisture proof covers 42, 45, and wires 46. . The resin core layer 24 covers and surrounds the metal block 10 and sidewalls of the metal studs 80 and is connected to the metal block 10 and the metal studs 80. The first moisture-proof cover 42 extends laterally from the bottom of the resin core layer 24 and more completely covers the metal block 10 and the buried plastic 244 and between the metal posts 80 and the buried plastic 244. interface. The second moisture-proof cover 45 extends laterally from above on the resin core layer 24 and completely covers the interface between the metal block 10 and the embedding plastic 244 from above. The wires 46 extend laterally from the upper side of the resin core layer 24 and completely cover the interface between the metal studs 80 and the embedding plastic 244, and are electrically connected to the metal studs 80.

As described in the above embodiment, the present invention constructs a unique heat dissipation gain type circuit board having a moisture proof cover, which exhibits excellent reliability. Preferably, the heat dissipation gain type circuit board comprises a metal block, a resin core layer, a first moisture proof cover, a wire, and optionally a second moisture proof cover, wherein (i) the metal block is in the opposite The first and second sides have flat first and second sides, respectively; (ii) the resin core layer covers and surrounds the sidewall of the metal block, and has a first side in the first direction, and The second and opposite second moisture barrier covers extend laterally from the metal block to the resin core layer in the first and second directions, respectively. And completely covering the interface between the metal and the plastic; and (iv) the wires extending laterally on the second side of the resin core layer.

Optionally, the heat dissipation gain type circuit board may further include a metal stud, wherein (i) each of the metal studs has a first side and a first side respectively in the first and second directions (ii) the resin core layer also surrounds and covers sidewalls of the metal studs; and (iii) the wires are electrically connected to the metal studs.

The metal block can provide preliminary thermal conduction to a semiconductor device disposed thereon, and the selective metal studs can provide electrical connections between opposite sides of the circuit board. Accordingly, the heat generated by the semiconductor device can be conducted out through the metal block, and the selective metal studs can serve as a vertical signal transmission path or provide a ground/power plane for energy transfer and return. .

The resin core layer can be joined to the metal block and the selective metal studs by a lamination process. For example, the metal block and the selective metal studs may be respectively embedded in the first and second openings of a stack structure, the stack structure comprising a first metal layer and a second metal The film is bonded between the layers, followed by application of heat and pressure in a lamination procedure to cure the conforming film. By the laminating process, the bonding film can provide a stable mechanical connection between the first metal layer and the second metal layer, and an adhesive is extruded from the bonding film to cover and surround And conforming to the metal block and the sidewalls of the selective metal studs. Therefore, one of the resin core layers is formed to have opposite first and second sides respectively connected to the first and second metal layers (usually copper layers), and is pasted by the adhesive that is extruded Attached to the metal block and the sidewalls of the selective metal studs, the adhesive is extruded between the metal block and the resin core layer, and between the selective metal studs Between the core layer of the resin. Preferably, the adhesive has substantially the first side of the metal block and the selective metal studs, and the outer surface of the first metal layer on the resin core layer in the first direction a first surface of the common plane, and having the second side substantially opposite to the metal block and the selective metal studs and the second metal layer on the resin core layer in the second direction The outer surface is coplanar with one of the second surfaces.

In another aspect, the resin core layer of the present invention may be formed by a molding process, or may be formed by embedding an epoxy resin or polyimide, to form a buried plastic, and the embedded plastic is surrounded and The same shape is coated on the metal block and the sidewalls of the selective metal studs, and contacts the sidewalls of the metal block and the selective metal studs. Further, a metal plate may be attached to one side of the resin core layer by the above-described molding process or resin layer press process. For example, the metal block and the selective metal studs may be partially embedded in the opening of the metal plate, and then a buried plastic is formed to cover the metal plate and the metal block and the selective a sidewall of the metal stud and extending into the gap between the metal block and the metal plate and between the selective metal stud and the metal plate. Thus, the resin core layer can have a first side coupled to one of the metal sheets and a second side substantially coplanar with the second side of the metal block and the selectable metal studs. Preferably, the metal plate is substantially coplanar with the embedding plastic, the metal block, and the metal studs in the first direction.

A carrier film (usually an adhesive tape) can be used to provide a temporary holding force prior to the lamination or molding process described above. For example, the carrier film may be temporarily attached to the metal block and the first or second sides of the selective metal stud, and the first or second metal layer of the stacked structure The metal block and the selective metal studs in the first and second openings of the stacked structure are respectively fixed on the outer surface, and then the lamination procedure of the stacked structure is performed. And as for the molding process, the carrier film may be attached to the metal block, the selective metal stud, and the selective metal plate, and then the buried plastic is formed to cover the carrier film, the selectivity a metal plate, and the metal block and the side walls of the selective metal studs. After the metal block and the selective metal studs are bonded to the resin core layer as described above, the carrier film is separated therefrom before depositing the moisture barrier/the wires.

The first and second moisture-proof covers may be metal layers (usually copper layers) and completely cover the interface between the two materials whose thermal expansion coefficients do not match in the first and second directions, respectively. In a state in which the resin core layer is bonded to the metal block by a lamination process of the stacked structure, the first and the second selective moisture-proof covers may be in contact in the first and second directions, respectively. Fully covering the adhesive between the metal block and the resin core layer, and completely covering the interface between the metal block and the adhesive in the first and second directions, and more respectively in the resin core layer The first and second sides extend laterally. In this aspect, the first and second surfaces of the adhesive, the first and second sides of the metal block, and the first portion may be respectively electrolessly plated and then electrolytically plated. And depositing a coating on the outer surface of the second metal layer to form the first and the optional second moisture barrier cover. Therefore, the first moisture-proof cover may include a selected portion extending from the first side of the metal block to the first metal layer on the resin core layer, and the selective second moisture-proof cover may A selected portion is included that extends from the second side of the metal block to the second metal layer on the resin core layer. More specifically, the first and the optional second moisture barrier cover respectively comprise the first and second metal layers of the stacked structure, and each has a first thickness (corresponding to the draping) at the contact of the adhesive The thickness of the cladding layer is about 0.5 to 50 micrometers), and the second layer of the first thickness or the second layer is added to the resin core layer (corresponding to the coating layer and the first or second metal layer a thickness) and a flat surface facing the first or second direction. According to another aspect of forming the resin core layer to be bonded to the metal block by forming the embedding plastic, a coating layer may be deposited on the metal block by a thin film sputtering method followed by an electrolytic plating method. And the first and second sides of the embedding plastic, thereby forming the first and the optional second moisture barrier cover. In this aspect, the first and the optional second moisture-proof covers may extend laterally on the first and second sides of the resin core layer, respectively, and completely cover the first and second directions respectively. The interface between the metal block and the embedding plastic, and each having a thickness of 0.5 to 50 microns. As described above, the first side of the resin core layer can be coupled to a metal plate such that the first moisture barrier cover can have an inconsistent thickness. More specifically, the first moisture barrier cover may have a first thickness (corresponding to the thickness of the cladding layer, about 0.5 to 50 micrometers) and greater than the interface between the metal block and the buried plastic. a second thickness of the first thickness (corresponding to the thickness of the cladding layer and the metal plate added). Similarly, for a circuit board having a metal stud as a vertical electrical connection, an additional first moisture proof cover should preferably be formed, each of the additional first moisture proof covers having the first side from the metal stud. Extending to the first metal layer of the stack structure or from the first side of the metal stud to a selected portion of the first side of the embedding plastic. Thus, the circuit board can include a plurality of first moisture barrier covers spaced apart from one another to completely cover the interface of thermal expansion coefficient mismatch in the first direction. More specifically, in the aspect in which the resin core layer is bonded to the metal block/metal stud by the layering process of the stacked structure, the additional first moisture-proof covers can be contacted and completely covered in the first direction. An adhesive between the metal studs and the resin core layer, and an interface between the metal studs and the adhesive, and laterally extending on the first side of the resin core layer. In another aspect of forming the resin core layer and the metal block/metal stud by forming the embedding plastic, the additional first moisture proof cover may extend laterally on the first side of the resin core layer. And completely covering the interface between the metal stud and the embedding plastic in the first direction. Other details regarding the additional first moisture barrier cover are the same as the first moisture barrier cover described above, and the description will not be repeated for the sake of brevity.

The cladding layer deposited when the first and second moisture barrier covers are formed may be formed by a metal patterning process. The wires are spaced from the selective second moisture barrier and provide an electrical connection to the semiconductor device. In addition, in the circuit board using the metal studs as vertical electrical connections, the wires have lateral extensions from the second side of the metal studs to the second metal layer of the stack structure. Or extending laterally from the second side of the metal studs to selected portions of the second side of the embedding plastic. Therefore, the wires are electrically connected to the metal studs, and completely cover the interface of the thermal expansion coefficient mismatch in the vicinity of the metal studs in the second direction. More specifically, in a state in which the metal block/metal stud is bonded to the resin core layer by the lamination process of the stacked structure, the wires completely cover the metal studs in the second direction and An adhesive between the resin core layers and an interface between the metal studs and the adhesive. In this aspect, the wires have a first thickness (corresponding to a thickness of the cladding layer of about 0.5 to 50 micrometers) at a point of contact with the adhesive, and a greater than where the resin core layer contacts. a second thickness of the first thickness (corresponding to the thickness of the cladding layer and the second metal layer). And in another aspect of forming the resin core layer bonded to the metal block/metal stud by forming the embedding plastic, the wires completely covering the metal stud and the embedding plastic in the second direction Interface.

The present invention further provides a semiconductor package in which a semiconductor device such as a wafer is mounted on the second side of the metal block of the circuit board and electrically connected to the wiring of the circuit board, for example, by wire bonding. In addition, a cover can be provided to encapsulate the semiconductor device therein. Accordingly, even if the interface between the two materials whose thermal expansion coefficients do not match is cracked, the moisture-proof cover of the wiring board can prevent moisture from the external environment from entering the semiconductor body through the crack. In addition, thermal energy generated by the semiconductor device can be conducted to the metal block and dissipated to the moisture barrier having a larger heat dissipation area than the metal block.

The group may be a first-level or second-level single-wafer or multi-chip device. For example, the group may be a single chip or a multi-chip. First-order package structure. Alternatively, the group may be a second-order module comprising a single package or a multi-package, and each package may comprise a single wafer or a plurality of wafers, and the wafer may be a packaged or unpackaged wafer. Additionally, the wafer can be a die, wafer level package wafer, or the like.

The term "overlay" means incomplete and complete coverage in the vertical and / or lateral directions. For example, when the first moisture-proof cover is facing downward, the semiconductor device covers the metal block from above, regardless of whether other components such as an adhesive are interposed between the semiconductor device and the metal block.

The terms "set on" and "attached to" include contact and non-contact with a single or multiple components. For example, the semiconductor device can be attached to the second moisture barrier cover regardless of whether the semiconductor device contacts the second moisture barrier cover or is separated from the second moisture barrier cover by an adhesive.

The term "electrical connection" means a direct or indirect electrical connection. For example, the semiconductor device is electrically connected to the wire by wire bonding but does not contact the wire.

The "first direction" and "second direction" do not depend on the orientation of the board. Anyone familiar with the art can easily understand the direction in which they actually refer. For example, the first side of the metal block faces the first direction, and the second side of the metal block faces the second direction regardless of whether the circuit board is inverted. Thus, the first and second directions are opposite to each other and perpendicular to the side direction, and the laterally aligned elements intersect the lateral planes perpendicular to the first and second directions. In addition, when the first moisture-proof cover surface faces the downward direction, the first direction is a downward direction, and the second direction is an upward direction, and when the first moisture-proof cover surface faces an upward direction, the first direction is upward Direction, the second direction is the downward direction.

The heat dissipation gain type circuit board according to the present invention has various advantages in that it provides a heat dissipation path from the wafer to the first moisture barrier cover under the metal block. The resin core layer provides mechanical support and acts as a spacer between the wires and the metal block and between the metal posts and the metal block. The first moisture-proof cover seals the interface between the metal and the plastic around it, and eliminates cracks on the interface as a means of introducing moisture. The wires provide horizontal electrical routing of the circuit board, and the metal posts provide electrical routing of the circuit board vertically. The circuit board prepared by this method is reliable, low in cost, and is very suitable for mass production.

The manufacturing method of the present invention has high applicability, and combines various mature electrical and mechanical connection technologies in a unique and progressive manner. Furthermore, the manufacturing method of the present invention can be carried out without expensive tools. Therefore, compared to the traditional technology, this production method can greatly increase the yield, yield, efficiency and cost-effectiveness.

The embodiments described herein are illustrative, and the elements or steps that are well known in the art may be simplified or omitted in order to avoid obscuring the features of the present invention. Similarly, in order to make the drawings clear, the drawings may also omit redundant or non-essential components and component symbols.

10‧‧‧metal block
First side of 101, 201, 801‧‧
102, 202, 802‧‧‧ second side
20‧‧‧Stack structure
203‧‧‧ openings
212, 222‧‧‧ first metal layer
214, 224‧‧ ‧ laminated film
217, 227‧‧‧ second metal layer
215, 225‧‧‧Adhesive
207‧‧‧ gap
42‧‧‧First moisture barrier
31‧‧‧ Carrier film
46‧‧‧Wire
45‧‧‧Second moisture-proof cover
T1‧‧‧first thickness
41‧‧‧ bottom coating
T3‧‧‧ third thickness
T2‧‧‧second thickness
21, 22, 24‧‧‧ resin core layer
T4‧‧‧fourth thickness
110‧‧‧Semiconductor group
44‧‧‧Top cladding
71‧‧‧ Cover
51‧‧‧Semiconductor device
100, 200, 300, 400, 500‧‧‧ heat dissipation gain type circuit board
223‧‧‧First dielectric layer
221‧‧‧First laminate
228‧‧‧Second dielectric layer
226‧‧‧Second laminate
249‧‧‧Opening
242‧‧‧Metal plates
204‧‧‧First opening
244‧‧‧Blocked plastic
80‧‧‧Metal studs
205‧‧‧ second opening
61‧‧‧Line

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of a metal block in accordance with a first embodiment of the present invention; FIG. 2 is a detailed view of the present invention. According to a first embodiment of the present invention, a stacked structure is shown in a sectional view on a carrier film; and in FIG. 3, in accordance with a first embodiment of the present invention, the metal block of FIG. 1 is attached to FIG. FIG. 4 and FIG. 5 are respectively a cross-sectional view and a top perspective view of the stacked structure of FIG. 3 after the layer is pressed according to the first embodiment of the present invention; FIGS. 6 and 7 are respectively According to a first embodiment of the present invention, a cross-sectional view and a top perspective view of the excess adhesive in the structure shown in Figs. 4 and 5 are removed. Fig. 8 is a view showing a first embodiment according to the present invention. 6 is a cross-sectional view of the carrier film removed; FIG. 9, 10, and 11 respectively provide a moisture-proof cover and a wire in the structure shown in FIG. 8 in accordance with the first embodiment of the present invention to complete A cross-sectional view, a bottom perspective view, and a top perspective view of a circuit board preparation; FIG. 12 is a In a first embodiment, a wafer is electrically connected to a cross-sectional view of a semiconductor package on the circuit board shown in FIG. 9. FIG. 13 is a stacked structure according to a second embodiment of the present invention. Figure 14 is a cross-sectional view of the metal block shown in Figure 1 attached to the carrier film of Figure 13 in accordance with a second embodiment of the present invention; In a second embodiment of the invention, a cross-sectional view of the stacked structure shown in FIG. 14 after a lamination process is shown; FIG. 16 is an additional embodiment of the structure shown in FIG. 15 in accordance with a second embodiment of the present invention. Figure 17 is a cross-sectional view showing the preparation of a circuit board in accordance with a second embodiment of the present invention, in which a moisture-proof cover and a wire are provided to the structure shown in Figure 16; 3 is a cross-sectional view of a metal plate on a carrier film according to a third embodiment of the present invention; and FIG. 19 is a third embodiment of the present invention, the metal block shown in FIG. 1 is attached to FIG. A cross-sectional view of the carrier film shown; FIG. 20 is a perspective view of a third embodiment of the present invention. FIG. 21 is a cross-sectional view showing a portion of the structure shown in FIG. 20 with the upper portion of the embedding plastic removed in accordance with a third embodiment of the present invention; FIG. 22 According to a third embodiment of the present invention, a sectional view of the carrier film of the structure shown in FIG. 21 is removed; and FIG. 23 is a third embodiment of the present invention, providing a moisture-proof cover and a wire to the structure of FIG. In the structure shown, the cross-sectional view of the circuit board preparation is completed; FIG. 24 is a cross-sectional view of a stacked structure on a carrier film according to a fourth embodiment of the present invention; and FIG. 25 is a fourth embodiment of the present invention. In the aspect, a metal block and a metal stud shown in FIG. 1 are attached to a cross-sectional view of the carrier film shown in FIG. 24; FIG. 26 is a fourth embodiment of the present invention, and FIG. 25 is shown. FIG. 27 is a cross-sectional view showing the excess adhesive and the carrier film in the structure shown in FIG. 26 in accordance with a fourth embodiment of the present invention; FIG. And 30, respectively, according to the fourth embodiment of the present invention, providing a moisture-proof cover and a wire to the In the structure, a cross-sectional view, a bottom perspective view, and a top perspective view of a circuit board preparation are completed; FIG. 31 is a metal block and a metal bump shown in FIG. 1 according to a fifth embodiment of the present invention. Figure 32 is a cross-sectional view showing a structure of the embedding plastic in the structure shown in Figure 31 in accordance with a fifth embodiment of the present invention; and Figure 33 is a fifth embodiment of the present invention. Wherein the upper portion of the buried plastic of the structure shown in FIG. 32 and the cross-sectional view of the carrier film are removed; and FIG. 34 is a fifth embodiment of the present invention, the moisture-proof cover and the wire are provided in FIG. The structure is shown to complete a cross-sectional view of a circuit board preparation.

10‧‧‧metal block

212‧‧‧First metal layer

214‧‧‧Finished film

217‧‧‧Second metal layer

215‧‧‧Adhesive

42‧‧‧First moisture barrier

45‧‧‧Second moisture-proof cover

46‧‧‧Wire

41‧‧‧ bottom coating

T1‧‧‧first thickness

T2‧‧‧second thickness

T3‧‧‧ third thickness

T4‧‧‧fourth thickness

21‧‧‧ resin core layer

44‧‧‧Top cladding

100‧‧‧heating gain type circuit board

Claims (9)

A method for preparing a heat dissipation gain type circuit board having a built-in metal block and a moisture-proof cover, the method comprising: providing a metal block having a flat one in a first direction opposite to each other and a second direction a first side and a second side; providing a stack structure comprising a first metal layer, a second metal layer, a bonding film, and a first opening, wherein the bonding film system is disposed Between the first metal layer and the second metal layer, the first opening extends through the first metal layer, the bonding film, and the second metal layer, the first metal layer and the second The metal layers each have a flat outer surface in the first direction and the second direction, respectively; the metal block is embedded in the first opening of the stacked structure, and between the stacked structure and the metal block Retaining a gap, and then curing the bonding film to form a resin core layer, the resin core layer including a first side connected to the first metal layer, and a second side opposite to the second metal layer Where the stack The structure is attached to the sidewall of the metal block by extruding from the bonding film into the stack structure and an adhesive of the gap between the metal blocks; removing the adhesive that is extruded An excess portion such that the opposite exposed surfaces of the adhesive are in the first direction and the second direction, substantially the first side and the second side of the metal block, and the first metal The layers and the outer surfaces of the second metal layer are coplanar; forming a plurality of wires extending laterally on the second side of the resin core layer; and forming a first moisture barrier cover, the first moisture barrier cover Extending from the first side of the metal block laterally to the first metal layer to completely cover the exposed surface of the adhesive from the first direction, Wherein a second moisture-proof cover is simultaneously formed by the step of forming the wires, and the second moisture-proof cover extends laterally from the second side of the metal block to the second of the resin core layer a metal layer to completely cover the exposed surface of the adhesive from the second direction. The method of claim 1, wherein the method further comprises: providing a plurality of metal studs, each of the metal studs having a flat first in the first direction and the second direction, respectively a side and a second side, wherein (i) the stack structure further comprises a plurality of second openings extending through the first metal layer, the bonding film, and the second metal layer, (ii) the step of embedding the metal block in the first opening of the stacked structure comprises embedding the metal studs into the second openings of the push-up structure, so that the adhesive is also squeezed And the (iii) the wires are electrically connected to the metal studs. The preparation method of claim 1, wherein the first moisture-proof cover and the second moisture-proof cover are metal layers, and the first moisture-proof cover and the second moisture-proof cover are electrolessly plated, and then Formed by electrolytic plating, and the first moisture-proof cover and the second moisture-proof cover have a thickness of between 0.5 μm and 50 μm in contact with the adhesive to be extruded. A method for preparing a heat dissipation gain type circuit board having a built-in metal block and a moisture-proof cover, the method comprising: attaching a metal block to a carrier film, wherein the metal block is in a first direction opposite to each other and a second Having a flat first side and a second side respectively; forming a buried plastic to cover the metal block and the carrier film; removing a portion of the embedding plastic to form a resin core layer, the resin core layer Having a first side in the first direction and a second side coplanar with the second side of the metal block in the second direction, and removing the carrier film; Forming a plurality of wires extending laterally on the second side of the resin core layer; and forming a first moisture barrier cover that completely covers the metal block and the resin core from the first direction An interface between the layers, wherein a second moisture barrier is simultaneously formed by the step of forming the wires to completely cover the interface between the metal block and the resin core layer from the second direction. The method of claim 4, wherein the method further comprises: attaching a plurality of metal studs to the carrier film, the metal studs respectively in the first direction and the second direction, Included in each of the flat first side and a second side, wherein (i) after the step of removing the portion of the embedding plastic, the second side of the resin core layer is substantially in the second direction And the second side of the metal studs are coplanar, and (ii) the wires are electrically connected to the metal studs. The preparation method of claim 4, wherein the first moisture-proof cover and the second moisture-proof cover are metal layers, and the first moisture-proof cover and the second moisture-proof cover are sprayed by a film, and then Formed by electrolytic plating, and the first moisture-proof cover and the second moisture-proof cover are adjacent to the interfaces between the metal block and the buried plastic, and have a thickness of between 0.5 μm and 50 μm. A semiconductor package comprising: a heat dissipation gain type circuit board comprising: a metal block having a first side and a second respectively in a first direction opposite to each other and a second direction a resin core layer covering and surrounding the side wall of the metal block, and having a first side in the first direction and an opposite second side in the second direction; The adhesive is sandwiched between the metal block and the resin core layer; a first moisture-proof cover, the first moisture-proof cover completely covering the adhesive in the first direction, wherein The first moisture-proof cover has a first thickness at the contact with the adhesive, and a second thickness at the contact with the resin core layer, the second thickness is greater than the first thickness; the plurality of wires are tied to the wire a second side of the resin core layer extending laterally; and a second moisture barrier cover that completely covers the adhesive from the second direction; and a semiconductor device disposed on the metal The second side of the block is electrically connected to the wires. The semiconductor package of claim 7, wherein (i) the heat dissipation gain type circuit board further comprises a plurality of metal studs, wherein the metal studs are respectively in the first direction and the second direction Each of the upper side has a flat first side and a second side, (ii) the resin core layer also covers and surrounds the side walls of the metal studs, (iii) the adhesive is also sandwiched between the metal studs and Between the resin core layers, and (iv) the wires are electrically connected to the metal studs. The semiconductor package of claim 7, wherein the first moisture-proof cover and the second moisture-proof cover are metal layers, and the first moisture-proof cover and the second moisture-proof cover are in contact with the adhesive. Each has a thickness of between 0.5 microns and 50 microns.