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TWI563654B - Enhancement-Mode High-Electron-Mobility Transistor Structure - Google Patents

Enhancement-Mode High-Electron-Mobility Transistor Structure

Info

Publication number
TWI563654B
TWI563654B TW104128017A TW104128017A TWI563654B TW I563654 B TWI563654 B TW I563654B TW 104128017 A TW104128017 A TW 104128017A TW 104128017 A TW104128017 A TW 104128017A TW I563654 B TWI563654 B TW I563654B
Authority
TW
Taiwan
Prior art keywords
enhancement
electron
transistor structure
mobility transistor
mode high
Prior art date
Application number
TW104128017A
Other languages
Chinese (zh)
Other versions
TW201709514A (en
Inventor
Yen Lun Huang
Chien-Jen Sun
I-Ching Li
Wen-Ching Hsu
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Priority to TW104128017A priority Critical patent/TWI563654B/en
Priority to CN201610235990.6A priority patent/CN106486544B/en
Application granted granted Critical
Publication of TWI563654B publication Critical patent/TWI563654B/en
Publication of TW201709514A publication Critical patent/TW201709514A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7789—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface the two-dimensional charge carrier gas being at least partially not parallel to a main surface of the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
TW104128017A 2015-08-26 2015-08-26 Enhancement-Mode High-Electron-Mobility Transistor Structure TWI563654B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW104128017A TWI563654B (en) 2015-08-26 2015-08-26 Enhancement-Mode High-Electron-Mobility Transistor Structure
CN201610235990.6A CN106486544B (en) 2015-08-26 2016-04-15 enhanced high electron mobility transistor structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104128017A TWI563654B (en) 2015-08-26 2015-08-26 Enhancement-Mode High-Electron-Mobility Transistor Structure

Publications (2)

Publication Number Publication Date
TWI563654B true TWI563654B (en) 2016-12-21
TW201709514A TW201709514A (en) 2017-03-01

Family

ID=58227503

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104128017A TWI563654B (en) 2015-08-26 2015-08-26 Enhancement-Mode High-Electron-Mobility Transistor Structure

Country Status (2)

Country Link
CN (1) CN106486544B (en)
TW (1) TWI563654B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112420843A (en) * 2020-11-19 2021-02-26 长江存储科技有限责任公司 Semiconductor device and method for manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10535738B2 (en) * 2017-10-31 2020-01-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure and manufacturing method of the same
CN110943126B (en) * 2018-09-21 2023-05-26 台湾积体电路制造股份有限公司 Semiconductor structure and manufacturing method thereof
TWI749369B (en) * 2019-09-12 2021-12-11 黃知澍 N-face III/nitride epitaxial structure and its active device and its gate protection device
CN110600548A (en) * 2019-09-20 2019-12-20 中国电子科技集团公司第十三研究所 Enhancement mode heterojunction field effect transistor
TWI764475B (en) * 2020-12-28 2022-05-11 國家中山科學研究院 Enhancement Mode Gallium Nitride Device with P-type Doping Layer Electrode Offset

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201133794A (en) * 2009-08-03 2011-10-01 Sony Corp Semiconductor device and method for manufacturing same
TW201327815A (en) * 2011-12-28 2013-07-01 Taiwan Semiconductor Mfg High electron mobility transistor and method of forming the same
TW201344804A (en) * 2012-02-03 2013-11-01 Transphorm Inc Buffer layer structures suited for III-nitride devices with foreign substrates
TW201405823A (en) * 2012-06-27 2014-02-01 Triquint Semiconductor Inc Group III-nitride transistor using a regrown structure
TW201411734A (en) * 2012-09-05 2014-03-16 Taiwan Semiconductor Mfg Semiconductor device and method for manufacturing the same and method for manufacturing transistor
TW201541636A (en) * 2014-04-30 2015-11-01 Taiwan Semiconductor Mfg Co Ltd High electron mobility transistor and fabrication thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009038175A (en) * 2007-08-01 2009-02-19 Panasonic Corp Nitride semiconductor transistor and manufacturing method thereof
US8008689B2 (en) * 2007-08-23 2011-08-30 Ngk Insulators, Ltd. MIS gate structure type HEMT device and method of fabricating MIS gate structure type HEMT device
JP2013207102A (en) * 2012-03-28 2013-10-07 Fujitsu Ltd Compound semiconductor device and method for manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201133794A (en) * 2009-08-03 2011-10-01 Sony Corp Semiconductor device and method for manufacturing same
TW201327815A (en) * 2011-12-28 2013-07-01 Taiwan Semiconductor Mfg High electron mobility transistor and method of forming the same
TW201344804A (en) * 2012-02-03 2013-11-01 Transphorm Inc Buffer layer structures suited for III-nitride devices with foreign substrates
TW201405823A (en) * 2012-06-27 2014-02-01 Triquint Semiconductor Inc Group III-nitride transistor using a regrown structure
TW201411734A (en) * 2012-09-05 2014-03-16 Taiwan Semiconductor Mfg Semiconductor device and method for manufacturing the same and method for manufacturing transistor
TW201541636A (en) * 2014-04-30 2015-11-01 Taiwan Semiconductor Mfg Co Ltd High electron mobility transistor and fabrication thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112420843A (en) * 2020-11-19 2021-02-26 长江存储科技有限责任公司 Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
CN106486544A (en) 2017-03-08
TW201709514A (en) 2017-03-01
CN106486544B (en) 2019-03-22

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