TWI550736B - Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation - Google Patents
Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation Download PDFInfo
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- TWI550736B TWI550736B TW103124236A TW103124236A TWI550736B TW I550736 B TWI550736 B TW I550736B TW 103124236 A TW103124236 A TW 103124236A TW 103124236 A TW103124236 A TW 103124236A TW I550736 B TWI550736 B TW I550736B
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
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- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
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- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
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Description
本發明係有關於微電子元件的封裝，尤其有關於半導體晶片的封裝。 The present invention relates to packaging of microelectronic components, and more particularly to packaging of semiconductor wafers.
微電子元件一般係包括一種例如是矽或砷化鎵的半導體材料的一薄板，其通常稱為一晶粒或是一半導體晶片。半導體晶片通常是被提供為個別的預先封裝的單元。在某些單元的設計中，該半導體晶片係被安裝到一基板或是晶片載體，其接著被安裝在一例如是印刷電路板的電路面板之上。 Microelectronic components generally comprise a thin plate of a semiconductor material such as germanium or gallium arsenide, commonly referred to as a die or a semiconductor wafer. Semiconductor wafers are typically provided as individual pre-packaged units. In some unit designs, the semiconductor wafer is mounted to a substrate or wafer carrier, which is then mounted over a circuit panel such as a printed circuit board.
主動電路係被製造在該半導體晶片的一第一面(例如，一前表面)中。為了使得電連接至該主動電路變得容易，該晶片係在相同的面上設置有焊墊。該些焊墊通常是以一規則的陣列來加以置放，其不是在該晶粒的邊緣周圍、就是對於許多記憶體元件而言是在該晶粒中心內。該些焊墊一般是由大約0.5微米(μm)厚的一種例如是銅或鋁的導電金屬所做成的。該些焊墊可以包含單層或是多層的金屬。該些焊墊的尺寸將會隨著該裝置類型而變化，但是通常將會在一側上量測到數十到數百微米。 The active circuit is fabricated in a first side (eg, a front surface) of the semiconductor wafer. In order to make electrical connection to the active circuit easy, the wafer is provided with pads on the same face. The pads are typically placed in a regular array that is not around the edge of the die, or in the center of the die for many memory components. The pads are typically made of a conductive metal such as copper or aluminum that is about 0.5 micrometers (μm) thick. The pads may comprise a single layer or a plurality of layers of metal. The size of the pads will vary with the type of device, but will typically measure tens to hundreds of microns on one side.
例如是半導體晶片的微電子元件通常需要許多的輸入與輸 出連線至其它電子構件。一半導體晶片或是其它相當的裝置之輸入與輸出的接點一般是以實質覆蓋該晶片的一表面之格子狀的圖案(通常被稱為一"區域陣列")、或是用可以平行且相鄰該晶片的前表面的每個邊緣延伸之細長的列、或是在該前表面的中心來加以設置。半導體晶片通常是以封裝來加以提供的，此係使得該晶片在製造期間以及在該晶片安裝在一例如是電路板或其它電路面板之外部的基板上的期間之處理變得容易。例如，許多半導體晶片是以適合用於表面安裝的封裝來加以提供的。此一般類型的許多封裝已經被提出來用於各種的應用。最普遍的是，此種封裝係包含一通常被稱為"晶片載體"的介電元件，其中端子係被形成為在介電質上的電鍍或蝕刻的金屬結構。這些端子通常是藉由例如是沿著該晶片載體本身延伸之薄的線路的特點並且藉由延伸在該晶片的接點以及該些端子或線路之間的細微的引線或導線來連接至該晶片本身的接點。在一表面安裝操作中，該封裝係被設置到一電路板之上，使得在該封裝上的每個端子係和該電路板上之一對應的接觸墊對準。焊料或是其它接合材料係被設置在該些端子以及該些接觸墊之間。該封裝可以藉由加熱該組件以便於熔化或"回焊(reflow)"該焊料、或者是活化該接合材料而永久地接合在適當的地方。 For example, microelectronic components of semiconductor wafers often require a lot of input and output. Wire out to other electronic components. The contacts of the input and output of a semiconductor wafer or other equivalent device are generally in a lattice-like pattern (generally referred to as an "area array") that substantially covers a surface of the wafer, or may be parallel and phased. An elongated column extending adjacent each edge of the front surface of the wafer or disposed at the center of the front surface. Semiconductor wafers are typically provided in a package that facilitates handling of the wafer during fabrication and during mounting of the wafer on a substrate such as a circuit board or other circuit board. For example, many semiconductor wafers are provided in packages suitable for surface mounting. Many packages of this general type have been proposed for various applications. Most commonly, such packages comprise a dielectric component commonly referred to as a "wafer carrier" in which the terminals are formed as a plated or etched metal structure on a dielectric. These terminals are typically connected to the wafer by, for example, the features of a thin line extending along the wafer carrier itself and by means of fine leads or wires extending between the contacts of the wafer and the terminals or lines. Its own joints. In a surface mount operation, the package is placed over a circuit board such that each terminal on the package is aligned with a corresponding one of the contact pads on the board. Solder or other bonding material is disposed between the terminals and the contact pads. The package can be permanently bonded in place by heating the assembly to melt or "reflow" the solder, or to activate the bonding material.
許多封裝係包含具有直徑通常是約0.1mm到約0.8mm(5到 30密耳(mil))的焊料球的形式之焊料塊(mass)，其係附接至該封裝的端子。一種具有從其底表面突出的一陣列的焊料球之封裝通常是被稱為一球格陣列或"BGA"封裝。被稱為平台柵格陣列或"LGA"封裝的其它封裝係藉由焊料所形成的薄層或區域(land)而被固定至該基板。此類型的封裝可以是相當小型 的。通常被稱為"晶片尺寸封裝"的某些封裝係佔用該電路板的一面積是等於或是只有稍微大於被納入在該封裝中的裝置的面積。此有利之處是在於其縮減該組件的整體尺寸，並且允許在該基板上的各種裝置之間使用短的互連線，此於是縮限在裝置之間的信號傳遞時間並且因此使得該組件在高速下的操作變得容易。 Many package systems contain a diameter of typically from about 0.1 mm to about 0.8 mm (5 to A solder mass in the form of a 30 mil solder ball attached to the terminals of the package. A package of solder balls having an array protruding from their bottom surface is generally referred to as a ball grid array or "BGA" package. Other packages, referred to as platform grid arrays or "LGA" packages, are secured to the substrate by a thin layer or land formed by solder. This type of package can be quite small of. Some packages, commonly referred to as "wafer size packages," occupy an area of the board that is equal to or only slightly larger than the area of the device that is included in the package. This is advantageous in that it reduces the overall size of the assembly and allows for the use of short interconnects between the various devices on the substrate, which then limits the signal transfer time between the devices and thus causes the assembly to Operation at high speed becomes easy.
封裝後的半導體晶片通常是以"堆疊的"配置來加以提供，其 中一封裝例如是被設置在一電路板上，而另一封裝係被安裝在該第一封裝的頂端之上。這些配置可以容許一些不同的晶片能夠被安裝在一電路板上的單一覆蓋區(footprint)之內，並且可進一步藉由在封裝之間提供短的互連而使得高速的操作變得容易。通常，此互連距離只是稍大於該晶片本身的厚度。為了在一堆疊的晶片封裝之內達成互連，在每個封裝的兩面上提供用於機械及電性連接的結構是必要的(除了最上方的封裝以外)。此已經例如藉由在該晶片被安裝到的基板的兩面上設置接觸墊或區域而被達成，該些墊係藉由導電的貫孔或類似者而穿過該基板來加以連接。堆疊的晶片配置以及互連結構的例子係在美國專利申請公開號2010/0232129中提供，該申請案的揭露內容係被納入在此作為參考。 The packaged semiconductor wafer is typically provided in a "stacked" configuration, The first package is, for example, disposed on a circuit board, and the other package is mounted on top of the first package. These configurations can allow for a number of different wafers to be mounted within a single footprint on a circuit board, and can be further facilitated by providing short interconnects between packages. Typically, this interconnect distance is only slightly greater than the thickness of the wafer itself. In order to achieve interconnection within a stacked wafer package, it is necessary to provide a mechanical and electrical connection on both sides of each package (except for the topmost package). This has been achieved, for example, by providing contact pads or regions on both sides of the substrate to which the wafer is mounted, the pads being connected through the substrate by conductive through holes or the like. An example of a stacked wafer configuration and interconnect structure is provided in U.S. Patent Application Publication No. 2010/0232129, the disclosure of which is incorporated herein by reference.
在晶片的任何實體配置中，尺寸都是一項重要的考量。隨著 可攜式的電子設備的快速發展，對於晶片之更小型的實體配置的需求已經變成更加強烈的。僅為舉例的，通常被稱為"智慧型電話"的裝置係整合一行動電話以及功能強大的資料處理器、記憶體以及輔助裝置的功能，例如是全球定位系統接收器、電子相機以及本地的區域網路連線與高解析度的顯示器及相關的影像處理晶片。此種裝置可以提供例如是完整的網際網路連 線、包含全解析度視訊的娛樂、導航、電子銀行以及更多的功能，其全部都在一口袋大小的裝置中。複雜的可攜式裝置係需要將許多的晶片封入一個小的空間中。再者，該些晶片中的某些個係具有許多輸入與輸出連線，通常被稱為"I/O"。這些I/O必須與其它晶片的I/O互連。該些互連應該是短的並且應該具有低阻抗，以最小化信號傳遞延遲。形成該些互連的構件不應該大幅增加該組件的尺寸。類似的需求也出現在其它應用中，例如在那些用在網際網路的搜尋引擎的資料伺服器中。例如，在複雜的晶片之間提供許多短的低阻抗的互連之結構可以增加該搜尋引擎的頻寬並且降低其功率消耗。 Size is an important consideration in any physical configuration of the wafer. along with With the rapid development of portable electronic devices, the need for smaller physical configurations of wafers has become more intense. For example only, a device commonly referred to as a "smart phone" integrates a mobile phone with powerful data processors, memory and auxiliary devices such as GPS receivers, electronic cameras, and local Area network connection with high-resolution displays and associated image processing chips. Such a device can provide, for example, a complete internet connection Lines, entertainment, navigation, e-banking and more with full-resolution video, all in one pocket-sized device. Complex portable devices require many wafers to be enclosed in a small space. Moreover, some of these wafers have a number of input and output connections, commonly referred to as "I/O." These I/Os must be interconnected with the I/O of other wafers. These interconnects should be short and should have low impedance to minimize signal transfer delay. The components forming the interconnects should not significantly increase the size of the assembly. Similar requirements are also found in other applications, such as those in the data servers used by the Internet's search engines. For example, a structure that provides many short, low impedance interconnects between complex wafers can increase the bandwidth of the search engine and reduce its power consumption.
儘管有已經達成的一些進步，但是可以做成進一步的改良以強化具有堆疊端子的微電子封裝結構以及用於製造此種封裝的製程。 Despite some advances that have been made, further improvements can be made to reinforce microelectronic package structures with stacked terminals and processes for making such packages.
根據本發明之一特點，一種微電子組件係被提出，其係包含第一及第二支撐元件，該第一及第二支撐元件的每一個係具有第一及第二相反朝向的表面。一微電子元件可被安裝至該第一及第二支撐元件中之一支撐元件的該第二表面。導電的第一連接器可以突出在該第一支撐元件的該第二表面之上，並且導電的第二連接器可以突出在該第二支撐元件的該第二表面之上，此種第二連接器可耦接至該第一連接器的末端。該組件可進一步包含一接觸該第一及第二支撐元件中之一支撐元件的該第二表面所形成的囊封體，並且其可以接觸下列的至少一個來加以形成：該第一及第二支撐元件的另一支撐元件的該第二表面；或是一接觸該另一支撐元件的該第二表面所形成的第二囊封體。個別對的耦接的第一及第二連接器可以 藉由該囊封體的材料來彼此分開並且與該微電子元件分開。在該第一支撐元件的該第一表面之第一封裝端子可以透過成對的與該些第二連接器對準且連結的該些第一連接器來與在該第二支撐元件的該第一表面之對應的第二封裝端子電耦接。在一例子中，下列的至少一個可包含導電塊：該些第一連接器以及該些第二連接器。 In accordance with a feature of the invention, a microelectronic assembly is proposed that includes first and second support members, each of the first and second support members having first and second oppositely facing surfaces. A microelectronic component can be mounted to the second surface of one of the first and second support members. An electrically conductive first connector may protrude above the second surface of the first support member, and a conductive second connector may protrude above the second surface of the second support member, such second connection The device can be coupled to the end of the first connector. The assembly can further include an encapsulation formed by contacting the second surface of one of the first and second support members, and can be formed by contacting at least one of: the first and second The second surface of the other support element of the support member; or a second encapsulation formed by contacting the second surface of the other support member. Individual pairs of coupled first and second connectors may The materials of the encapsulant are separated from each other and separated from the microelectronic element. The first package terminal on the first surface of the first support member can pass through the pair of first connectors aligned with and coupled to the second connectors and the first support member A corresponding second package terminal of one surface is electrically coupled. In an example, at least one of the following may include a conductive block: the first connectors and the second connectors.
根據一或多個例子，一在該些支撐元件的該些第二表面之間 的間隔(standoff)高度係大於該些第一連接器在至少一平行於該第一支撐元件的該第二表面的方向上的一間距。在另一例子中，該間隔高度可以是等於或大於1.5倍的該間距。 According to one or more examples, between the second surfaces of the support members The standoff height is greater than a spacing of the first connectors in at least one direction parallel to the second surface of the first support member. In another example, the spacing height can be equal to or greater than 1.5 times the spacing.
根據一或多個例子，該微電子元件可以具有一背向其被安裝 到的該支撐元件的面，並且該囊封體可以接觸下列的至少一個來加以形成：該微電子元件的該面或是一形成在該微電子元件的該面上的第三囊封體。 According to one or more examples, the microelectronic component can have a back mounted thereto The face of the support member is reached, and the encapsulant can be formed by contacting at least one of: the face of the microelectronic element or a third encapsulant formed on the face of the microelectronic element.
根據一或多個例子，該微電子組件可包含該第二囊封體，並 且該囊封體可以接觸該第二囊封體來加以形成。 According to one or more examples, the microelectronic assembly can include the second encapsulant, and And the encapsulant can be formed by contacting the second encapsulant.
根據一或多個例子，該微電子組件可包含該第二囊封體，該 第二囊封體可以接觸該微電子元件的該面來加以形成，並且該第二及第三囊封體可以是相同的囊封體。 According to one or more examples, the microelectronic assembly can include the second encapsulation, The second encapsulant can be formed in contact with the face of the microelectronic element, and the second and third encapsulants can be the same encapsulant.
根據一或多個例子，該些第一連接器以及該些第二連接器可 以具有分別在該第一及第二支撐元件的該第二表面之上的最大的高度處的末端，並且該些第一連接器的該些末端可以對準且連結至該些第二連接器的末端。 According to one or more examples, the first connectors and the second connectors may Ends having a maximum height above the second surface of the first and second support members, respectively, and the ends of the first connectors may be aligned and coupled to the second connectors The end.
根據一或多個例子，該些第一及第二連接器可以實質由焊料 所組成。 According to one or more examples, the first and second connectors may be substantially soldered Composed of.
根據一或多個例子，該些第一連接器或是該些第二連接器中 的至少一個可包含固體的可濕性非焊料的核心以及至少實質覆蓋該核心的焊料塗層。 According to one or more examples, the first connectors or the second connectors At least one of the wettable non-solder cores that may comprise a solid and a solder coating that at least substantially covers the core.
根據一或多個例子，該些第一連接器或是該些第二連接器中的至少一個可包含下列的至少一個：柱形凸塊或是固體的實質剛性金屬柱。 According to one or more examples, at least one of the first connectors or the second connectors may comprise at least one of the following: a stud bump or a solid substantially rigid metal post.
根據一或多個例子，該些第一連接器可包含柱形凸塊，並且該些第二連接器可包含柱形凸塊。 According to one or more examples, the first connectors may include stud bumps, and the second connectors may include stud bumps.
根據一或多個例子，該些第一連接器可包含固體的實質剛性金屬柱，並且該些第二連接器可包含固體的實質剛性金屬柱。 According to one or more examples, the first connectors may comprise solid substantially rigid metal posts, and the second connectors may comprise solid substantially rigid metal posts.
根據一或多個例子，該些第一連接器可包含固體的實質剛性金屬柱，並且該些第二連接器可包含固體的實質剛性金屬柱。 According to one or more examples, the first connectors may comprise solid substantially rigid metal posts, and the second connectors may comprise solid substantially rigid metal posts.
根據一或多個例子，一種堆疊的多晶片的微電子組件可包含一覆蓋該微電子組件的該第一支撐元件的微電子封裝，該微電子封裝係具有和該微電子組件的該些第一封裝端子連接的端子。 According to one or more examples, a stacked multi-wafer microelectronic assembly can include a microelectronic package covering the first support component of the microelectronic component, the microelectronic package having the plurality of microelectronic components A terminal to which a package terminal is connected.
根據一或多個例子，該些第一連接器可以是導電的金屬塊，並且該些第二連接器可包含固體的實質剛性金屬柱。 According to one or more examples, the first connectors may be electrically conductive metal blocks, and the second connectors may comprise solid substantially rigid metal posts.
根據一或多個例子，該些導電的金屬塊的每一個可以被該囊封體所圍繞。 According to one or more examples, each of the electrically conductive metal blocks may be surrounded by the encapsulation.
根據一或多個例子，該些金屬柱的每一個可以被該第三囊封體所圍繞。 According to one or more examples, each of the metal posts may be surrounded by the third encapsulant.
根據一或多個例子，該些第二連接器可以是導電的金屬塊， 該些導電的金屬塊的每一個可以被該囊封體所圍繞，並且該些第一連接器可包含固體的實質剛性金屬柱。 According to one or more examples, the second connectors may be conductive metal blocks. Each of the electrically conductive metal blocks may be surrounded by the encapsulant, and the first connectors may comprise solid substantially rigid metal posts.
根據一或多個例子，該微電子組件可包含第三連接器，該些 第三連接器分別與該些第一連接器中之一的一末端以及該些第二連接器中之一的一末端對準，並且和該些對準的第一及第二連接器中的至少一個連結，其中耦接的第一、第二及第三連接器可以對準在個別的行中，並且該些行可以藉由該囊封體的材料來彼此分開並且與該微電子元件分開，並且該些第一封裝端子可以透過該些第三連接器來與該些對應的第二封裝端子電耦接。 According to one or more examples, the microelectronic assembly can include a third connector, The third connector is respectively aligned with an end of one of the first connectors and an end of one of the second connectors, and in the aligned first and second connectors At least one link, wherein the coupled first, second, and third connectors may be aligned in separate rows, and the rows may be separated from each other by the material of the encapsulant and separated from the microelectronic component And the first package terminals are electrically coupled to the corresponding second package terminals through the third connectors.
根據一或多個例子，該囊封體可以將個別的第三連接器彼此 分開及隔離。 According to one or more examples, the encapsulant can place individual third connectors with each other Separate and isolated.
根據一或多個例子，該微電子組件可包含圍繞下列的至少一 個的連接器的部分或是覆蓋其表面之介電加固環(reinforcing collar)：該些第一連接器或是該些第二連接器，其中該囊封體係覆蓋該些加固環。該些介電加固環通常沿著個別的連接器的表面上升，並且可以在相鄰的環之間形成溝槽(trough)。 According to one or more examples, the microelectronic assembly can include at least one of the following A portion of the connector or a dielectric reinforcing collar covering the surface thereof: the first connector or the second connectors, wherein the encapsulation system covers the reinforcing rings. The dielectric reinforcing rings typically rise along the surface of the individual connectors and may form a trough between adjacent rings.
根據一或多個例子，該些加固環係包括一種底膠填充 (underfill)材料、或是可以由一種底膠填充材料所做成。 According to one or more examples, the reinforcing ring systems comprise a primer filling The underfill material may be made of a primer filling material.
根據本發明之一特點，一種微電子組件，其可包含分別具有 第一及第二相反朝向的表面的第一及第二支撐元件，以及一被安裝至該第一及第二支撐元件中之一支撐元件的該第二表面的微電子元件。導電的第 一連接器可以突出在該第一支撐元件的該第二表面之上，並且導電的第二連接器可以突出在該第二支撐元件的該第二表面之上並且可耦接至該些第一連接器的末端。在某些例子中，加固環可以圍繞該些第一連接器、該些第二連接器、或是第一及第二連接器兩者的部分。一囊封體可被形成在該第一及第二支撐元件的該些第二表面之間並且接觸該些加固環。 According to one feature of the invention, a microelectronic assembly can include First and second support members of the first and second oppositely facing surfaces, and a microelectronic component mounted to the second surface of one of the first and second support members. Conductive A connector may protrude above the second surface of the first support member, and the electrically conductive second connector may protrude above the second surface of the second support member and may be coupled to the first The end of the connector. In some examples, the reinforcement ring can surround the first connector, the second connectors, or portions of both the first and second connectors. An encapsulant can be formed between the second surfaces of the first and second support members and in contact with the reinforcement rings.
該囊封體可以囊封該微電子元件以及個別對的耦接的第一 及第二連接器。在該第一支撐元件的該第一表面之第一封裝端子可以透過成對的與該些第二連接器對準且連結的該些第一連接器來和在該第二支撐元件的該第一表面之對應的第二封裝端子電耦接。 The encapsulant can encapsulate the microelectronic component and the first pair of coupled pairs And a second connector. a first package terminal on the first surface of the first support member can pass through the pair of first connectors aligned with and coupled to the second connectors, and the first portion of the second support member A corresponding second package terminal of one surface is electrically coupled.
根據一或多個例子，該些成對的耦接的第一及第二連接器可 包含實質剛性固體的金屬柱以及電鍍到該些金屬柱的端面上且向上地突出在該端面之上的金屬互連。 According to one or more examples, the pair of coupled first and second connectors may A metal post comprising substantially rigid solids and a metal interconnect plated onto the end faces of the metal posts and projecting upwardly over the end face.
根據本發明的另一特點的一種製造一微電子組件之方法可 包含結合第一及第二次組件以形成一組件，該組件係具有在該組件的一第一面向外的表面之第一端子以及在該組件的一與該第一表面相對的第二面向外的表面之第二端子。該些次組件中的至少一個可以具有至少一安裝到其之一面向內的第二表面的微電子元件。該微電子元件可以電耦接至該至少一次組件。該第一次組件可包含一第一支撐元件，並且該第二次組件可包含一第二支撐元件，並且該第一或第二次組件中的至少一個可包含突出在此種支撐元件的該面向內的第二表面之上朝向該另一支撐元件的該面向內的第二表面之連接器。複數個該第一端子的每一個可以透過一個別對的一第一連接器具有一末端與一對應的第二連接器的一末端耦接來與個別的 第二端子電耦接，該第一連接器係延伸在該第二連接器之上。一種囊封材料(encapsulant)可以流入在該第一及第二支撐元件之間的一空間中，以便於形成一將個別對的被連結的第一及第二連接器的至少部分彼此分開的囊封體。 A method of manufacturing a microelectronic assembly according to another feature of the present invention Including combining the first and second sub-assemblies to form an assembly having a first terminal on a first outwardly facing surface of the assembly and a second outer surface of the assembly opposite the first surface The second terminal of the surface. At least one of the sub-assemblies may have at least one microelectronic component mounted to a second inwardly facing surface thereof. The microelectronic component can be electrically coupled to the at least one component. The first subassembly may include a first support member, and the second subassembly may include a second support member, and at least one of the first or second subassembly may include the protrusion protruding from the support member A connector facing the inwardly facing second surface of the other support member over the inwardly facing second surface. Each of the plurality of first terminals may have an end coupled to an end of a corresponding second connector through an opposite first connector The second terminal is electrically coupled, and the first connector extends over the second connector. An encapsulant may flow into a space between the first and second support members to form a pocket that separates at least portions of the respective pairs of joined first and second connectors from each other Seal.
根據一或多個例子，下列的至少一個：該些第一連接器或是 該些第二連接器係在該結合製程期間受到限制，以在該結合製程期間維持此種連接器的一高度。例如，焊料連接器在結合期間有倒塌的傾向。圍繞個別的連接器的一囊封體或是加固環可以在一結合製程期間幫助維持連接器的高度。再者，該囊封體或是加固環可以在結合期間幫助避免例如像是焊料的導電塊之個別的連接器的寬度擴大。 According to one or more examples, at least one of the following: the first connectors are either The second connectors are constrained during the bonding process to maintain a height of the connector during the bonding process. For example, solder connectors have a tendency to collapse during bonding. An encapsulation or reinforcement ring around the individual connectors can help maintain the height of the connector during a bonding process. Furthermore, the encapsulation or reinforcement ring can help to avoid an increase in the width of the individual connectors of the electrically conductive block, such as solder, during bonding.
根據一或多個例子，該微電子元件係具有一背對該微電子元 件可被安裝到的該支撐元件的面，並且該囊封體可以接觸下列的至少一個來加以形成：該微電子元件的該面、或是一黏附至該微電子元件的該面之第三囊封體。 According to one or more examples, the microelectronic component has a back-to-microelectronic element a face of the support member to which the member can be mounted, and the encapsulant can be formed by contacting at least one of: the face of the microelectronic component, or a third face of the microelectronic component Encapsulation.
根據一或多個例子，該第一或第二次組件中之一可包含一將 其連接器彼此分開的第二囊封體，並且該囊封體可以接觸該第二囊封體來加以形成。 According to one or more examples, one of the first or second sub-components may include a A second encapsulant having its connectors separated from each other, and the encapsulant may be formed in contact with the second encapsulant.
根據一或多個例子，該微電子組件可包含該第二囊封體，該 第二囊封體可以接觸該微電子元件的該面來加以形成，並且該第二及第三囊封體可以是相同的囊封體。 According to one or more examples, the microelectronic assembly can include the second encapsulation, The second encapsulant can be formed in contact with the face of the microelectronic element, and the second and third encapsulants can be the same encapsulant.
根據一或多個例子，該些第一連接器以及該些第二連接器可 以具有分別在該第一及第二支撐元件的該第二表面之上的最大的高度處的 末端，並且該些第一連接器的該些末端可和該些第二連接器的末端對準且直接連結。 According to one or more examples, the first connectors and the second connectors may Having a maximum height above the second surface of the first and second support members, respectively And the ends of the first connectors are aligned with the ends of the second connectors and directly connected.
根據一或多個例子，該些第一及第二連接器可以實質由焊料所組成。 According to one or more examples, the first and second connectors may consist essentially of solder.
根據一或多個例子，該些第一連接器可以是導電的金屬塊，並且該些第二連接器可包含固體的實質剛性金屬柱。 According to one or more examples, the first connectors may be electrically conductive metal blocks, and the second connectors may comprise solid substantially rigid metal posts.
10‧‧‧微電子組件 10‧‧‧Microelectronic components
12‧‧‧外部的構件 12‧‧‧External components
14‧‧‧組件 14‧‧‧ components
16‧‧‧外部的構件 16‧‧‧External components
20‧‧‧微電子元件 20‧‧‧Microelectronic components
21‧‧‧次組件 21‧‧‧ sub-components
22‧‧‧第二次組件 22‧‧‧Second component
101‧‧‧第一表面 101‧‧‧ first surface
102‧‧‧第一支撐元件 102‧‧‧First support element
103‧‧‧第二表面 103‧‧‧ second surface
104‧‧‧第二支撐元件 104‧‧‧Second support element
105‧‧‧第一表面 105‧‧‧ first surface
106‧‧‧第二表面 106‧‧‧second surface
115‧‧‧底膠填充 115‧‧‧Bottom glue filling
120‧‧‧微電子元件 120‧‧‧Microelectronic components
121‧‧‧凸塊 121‧‧‧Bumps
122‧‧‧正面 122‧‧‧ positive
124‧‧‧接點 124‧‧‧Contacts
125‧‧‧面 125‧‧‧ face
126‧‧‧接點 126‧‧‧Contacts
127‧‧‧邊緣/邊緣表面 127‧‧‧Edge/Edge Surface
128‧‧‧表面 128‧‧‧ surface
129‧‧‧表面/後表面 129‧‧‧Surface/back surface
130‧‧‧微電子元件 130‧‧‧Microelectronic components
132‧‧‧邊緣表面 132‧‧‧Edge surface
141‧‧‧第一封裝端子 141‧‧‧First package terminal
142‧‧‧第二封裝端子 142‧‧‧Second package terminal
142'‧‧‧端子 142'‧‧‧ terminals
144‧‧‧導電塊 144‧‧‧Electrical block
146‧‧‧連結元件 146‧‧‧Connecting components
147‧‧‧接點 147‧‧‧Contacts
148‧‧‧接點 148‧‧‧Contacts
150‧‧‧囊封體 150‧‧‧Encapsulation
152‧‧‧第二囊封體 152‧‧‧Second encapsulation
153‧‧‧頂端表面 153‧‧‧ top surface
154‧‧‧側表面 154‧‧‧ side surface
155‧‧‧開口 155‧‧‧ openings
156‧‧‧介電加固環/加固材料 156‧‧‧Dielectric reinforcement ring/reinforcing material
157‧‧‧部分 Section 157‧‧‧
159‧‧‧溝槽 159‧‧‧ trench
161‧‧‧第一連接器/焊料球/導電塊 161‧‧‧First connector / solder ball / conductive block
162‧‧‧第二連接器/導電塊 162‧‧‧Second connector/conductive block
162b‧‧‧第二連接器 162b‧‧‧Second connector
163‧‧‧末端 End of 163‧‧‧
163'‧‧‧末端 End of 163'‧‧‧
164‧‧‧末端 End of 164‧‧
164'‧‧‧末端 End of 164'‧‧‧
165‧‧‧連接器 165‧‧‧Connector
166‧‧‧導電的元件 166‧‧‧Electrically conductive components
169‧‧‧第三連接器 169‧‧‧ third connector
171‧‧‧核心/連接器 171‧‧‧core/connector
172‧‧‧核心/連接器 172‧‧‧core/connector
178‧‧‧第一橫向的方向 178‧‧‧ first horizontal direction
179‧‧‧第二橫向的方向 179‧‧‧ second horizontal direction
180‧‧‧垂直的方向 180‧‧‧Vertical direction
181‧‧‧金屬柱/第一連接器/第一柱 181‧‧‧Metal column/first connector/first column
182‧‧‧第二連接器/第二柱 182‧‧‧Second connector/second column
183‧‧‧垂直的尺寸 183‧‧‧Vertical size
184‧‧‧垂直的尺寸 184‧‧‧Vertical size
185‧‧‧寬度 185‧‧‧Width
186‧‧‧寬度 186‧‧‧Width
191‧‧‧第一連接器 191‧‧‧First connector
192‧‧‧第二連接器 192‧‧‧Second connector
210‧‧‧微電子封裝 210‧‧‧Microelectronics package
221‧‧‧柱形凸塊/第一連接器 221‧‧‧Cylindrical bump / first connector
222‧‧‧第二連接器 222‧‧‧Second connector
231‧‧‧導電塊 231‧‧‧Electrical block
241‧‧‧第一端子 241‧‧‧First terminal
263‧‧‧末端 End of 263‧‧
264‧‧‧末端 End of 264‧‧
264'‧‧‧末端 264'‧‧‧ end
266‧‧‧導電的元件 266‧‧‧Electrically conductive components
281‧‧‧第一柱 281‧‧‧First column
282‧‧‧第二柱 282‧‧‧second column
285‧‧‧邊緣表面 285‧‧‧Edge surface
291‧‧‧導電塊 291‧‧‧Electrical block
302‧‧‧支撐元件 302‧‧‧Support components
320‧‧‧第二微電子元件 320‧‧‧Second microelectronic components
321‧‧‧次組件 321‧‧‧ components
352‧‧‧囊封體 352‧‧‧Encapsulation
381‧‧‧第一連接器 381‧‧‧First connector
382‧‧‧第二連接器 382‧‧‧Second connector
410‧‧‧微電子封裝 410‧‧‧Microelectronics package
500‧‧‧系統 500‧‧‧ system
501‧‧‧殼體 501‧‧‧shell
502‧‧‧電路面板 502‧‧‧ circuit panel
504‧‧‧導體 504‧‧‧Conductor
506‧‧‧結構 506‧‧‧ structure
508‧‧‧電子構件/半導體晶片 508‧‧‧Electronic components/semiconductor wafers
510‧‧‧電子構件/顯示器螢幕 510‧‧‧Electronic components/display screen
511‧‧‧透鏡 511‧‧‧ lens
610‧‧‧微電子封裝/組件 610‧‧‧Microelectronics package/component
650‧‧‧第一囊封體/囊封材料 650‧‧‧First encapsulant/encapsulation material
910‧‧‧微電子封裝/組件 910‧‧‧Microelectronics package/component
950‧‧‧囊封體/囊封材料 950‧‧‧Encapsulation/encapsulation material
952‧‧‧第二囊封體 952‧‧‧Second encapsulation
953‧‧‧表面 953‧‧‧ surface
954‧‧‧表面 954‧‧‧ surface
962‧‧‧第二連接器 962‧‧‧Second connector
982‧‧‧金屬柱 982‧‧‧Metal column
1010‧‧‧微電子封裝 1010‧‧‧Microelectronics package
1110‧‧‧組件 1110‧‧‧ components
1210‧‧‧組件 1210‧‧‧ components
1250‧‧‧囊封體 1250‧‧‧Encapsulation
1252‧‧‧囊封體/囊封材料 1252‧‧‧Encapsulation/encapsulation material
1310‧‧‧組件 1310‧‧‧ components
1410‧‧‧組件 1410‧‧‧ components
1510‧‧‧組件 1510‧‧‧ components
1550‧‧‧第三囊封體 1550‧‧‧ Third encapsulation
a‧‧‧間距 A‧‧‧ spacing
b‧‧‧間距 B‧‧‧ spacing
H‧‧‧間隔高度 H‧‧‧ interval height
圖1A是描繪根據本發明的一實施例的一微電子封裝之截面圖。 1A is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖1B是描繪圖1A的微電子封裝的一個例子之俯視平面圖，該圖係朝向在該微電子封裝之一支撐元件的一表面之複數個端子檢視。 1B is a top plan view depicting an example of the microelectronic package of FIG. 1A viewed from a plurality of terminals on a surface of a support member of the microelectronic package.
圖2是描繪根據本發明的一實施例的一微電子封裝之截面圖。 2 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖3是描繪根據本發明的一實施例的一微電子組件之截面圖。 3 is a cross-sectional view depicting a microelectronic assembly in accordance with an embodiment of the present invention.
圖4A是描繪根據見於圖1A-B中的本發明的實施例的一變化的一微電子封裝之截面圖。 4A is a cross-sectional view depicting a variation of a microelectronic package in accordance with an embodiment of the present invention as seen in FIGS. 1A-B.
圖4B是描繪圖4A的微電子封裝的一例子之俯視平面圖，其係朝向在該微電子封裝之一支撐元件的一表面之堆疊端子檢視。 4B is a top plan view depicting an example of the microelectronic package of FIG. 4A as viewed from a stacked terminal on a surface of a support member of the microelectronic package.
圖5是描繪根據本發明的一實施例的一微電子封裝之截面圖。 FIG. 5 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖6是描繪根據本發明的一實施例的一微電子封裝之截面圖。 6 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖7是描繪根據本發明的一實施例的一微電子封裝之截面圖。 7 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖8是描繪根據本發明的一實施例的一微電子組件之截面圖。 Figure 8 is a cross-sectional view depicting a microelectronic assembly in accordance with an embodiment of the present invention.
圖9是描繪根據本發明的一實施例的一微電子封裝之截面圖。 9 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖10是描繪根據本發明的一實施例的一微電子封裝之截面圖。 10 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖11是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的一階段之截面圖。 11 is a cross-sectional view depicting a stage in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖12是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的在圖11的階段後續的一階段之截面圖。 12 is a cross-sectional view depicting a stage subsequent to the stage of FIG. 11 in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖13是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的在圖12的階段後續的一階段之截面圖。 13 is a cross-sectional view depicting a stage subsequent to the stage of FIG. 12 in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖14是描繪根據在圖11中所示的實施例的一變化的在一種製造一微電子封裝之方法中的一階段之截面圖。 14 is a cross-sectional view depicting a stage in a method of fabricating a microelectronic package in accordance with a variation of the embodiment shown in FIG.
圖15是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的一階段之截面圖。 15 is a cross-sectional view depicting a stage in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖16是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的在圖15的階段後續的一階段之截面圖。 16 is a cross-sectional view depicting a stage subsequent to the stage of FIG. 15 in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖17是描繪根據本發明的一實施例的在一種製造一微電子封裝之方法中的在圖16的階段後續的一階段之截面圖。 17 is a cross-sectional view depicting a stage subsequent to the stage of FIG. 16 in a method of fabricating a microelectronic package, in accordance with an embodiment of the present invention.
圖18是描繪根據在圖15中所示的實施例的一變化的在一種製造一微電子封裝之方法中的一階段之截面圖。 18 is a cross-sectional view depicting a stage in a method of fabricating a microelectronic package in accordance with a variation of the embodiment shown in FIG.
圖19是描繪根據本發明的一實施例的一微電子封裝之截面圖。 19 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖20是描繪根據本發明的一實施例的一微電子封裝之截面圖。 20 is a cross-sectional view depicting a microelectronic package in accordance with an embodiment of the present invention.
圖21係描繪根據本發明的一實施例的在一種製造一微電子組件之方法中的一階段。 21 depicts a stage in a method of fabricating a microelectronic assembly, in accordance with an embodiment of the present invention.
圖22係描繪根據在圖21中描繪的方法所形成的一微電子組件。 Figure 22 depicts a microelectronic assembly formed in accordance with the method depicted in Figure 21.
圖23係描繪在圖21中所描繪的製造方法的一變化。 Figure 23 depicts a variation of the manufacturing method depicted in Figure 21.
圖24係描繪見於圖21中的製造一微電子組件之方法的一變化。 Figure 24 is a depiction of a variation of the method of fabricating a microelectronic assembly as seen in Figure 21.
圖25係描繪根據在圖24中描繪的方法所形成的一微電子組件。 Figure 25 depicts a microelectronic assembly formed in accordance with the method depicted in Figure 24.
圖26係描繪根據見於圖11-14中的實施例的一變化的在一種製造一微電子組件之方法中的一階段。 Figure 26 depicts a stage in a method of fabricating a microelectronic assembly in accordance with a variation of the embodiment seen in Figures 11-14.
圖27係描繪從在圖26中描繪的方法所形成的一微電子組件。 Figure 27 depicts a microelectronic assembly formed from the method depicted in Figure 26.
圖28-29係描繪根據見於圖11-14中的實施例的一變化的在一種製造一微電子組件之方法中的階段。 28-29 depict stages in a method of fabricating a microelectronic assembly in accordance with a variation of the embodiment seen in FIGS. 11-14.
圖30係描繪根據在圖28-29中描繪的方法所形成的一微電子組件。 Figure 30 depicts a microelectronic assembly formed in accordance with the method depicted in Figures 28-29.
圖31是描繪根據本發明的一實施例的一微電子封裝或組件進一步利用在一系統中之截面圖。 31 is a cross-sectional view depicting a microelectronic package or assembly further utilized in a system in accordance with an embodiment of the present invention.
於是，本發明在此的實施例可以提供包含微電子元件並且具 有第一端子及第二端子(例如，頂端端子及底部端子)之改良的組件，其中電耦接該頂端端子及底部端子之垂直的互連係提供所期望的間隔高度，同時亦容許該些垂直的互連能夠在平行於該組件中的微電子元件的一面之水平的方向上所期望的間距下緊密地封裝。參照在圖1A-B中所描繪的微電子組件或是微電子封裝，在一例子中，在該些支撐元件的第二表面之間的一間隔高度H係大於該些第一連接器在至少一平行於該第一支撐元件的該第二表面的方向上的一間距"a"。在另一例子中，該間隔高度可以是等於或大於1.5倍的該間距。 Thus, embodiments of the invention herein may provide for inclusion of microelectronic components and An improved assembly having a first terminal and a second terminal (eg, a top terminal and a bottom terminal), wherein a vertical interconnection electrically coupled to the top terminal and the bottom terminal provides a desired spacing height while also allowing the vertical The interconnects can be tightly packed at a desired pitch parallel to the horizontal direction of one side of the microelectronic component in the assembly. Referring to the microelectronic assembly or microelectronic package depicted in FIGS. 1A-B, in an example, a spacing height H between the second surfaces of the support members is greater than the first connectors at least a spacing "a" in a direction parallel to the second surface of the first support member. In another example, the spacing height can be equal to or greater than 1.5 times the spacing.
如同在圖1A中進一步可見的，該微電子封裝10係包含一 第一支撐元件102以及一第二支撐元件104。每個支撐元件例如可以是一封裝基板，例如一晶片載體或介電元件或結構，其係結合介電質、半導體及導電材料中的兩種或多種，例如是端子、線路、接點及貫孔之導電的結構可被設置在其上。例如，支撐元件的一或兩者可以是一片狀或板狀的介電元件、或是包含一片狀或板狀的介電元件，其係包括無機或有機介電材料中的至少一種，並且其可以包含主要是無機材料、或主要是聚合材料、或是其可以是一包括無機及聚合材料之複合的結構。因此，在非限制下舉例而言，一或兩個支撐元件可包括一介電元件，除了別的材料之外，其係包含例如是聚醯亞胺、聚醯胺、環氧樹脂、熱塑性材料、熱固性材料的聚合材料。或者是，一或兩個支撐元件可包括一介電元件，其係包含一種無機介電材料，例如一種矽氧化物、一種矽氮化物、一種矽碳化物、氮氧化矽、氧化鋁，並且除了別的材料之外，一或兩個支撐元件可包含一種例如是矽、鍺或碳的半導體材料、或是一或多個此種無機材料的一組合。在另一例子中，一或兩個支撐元件可包括一介電元件，其係例如是上述的材料的一或多種聚合材料以及一或多種無機材料的一組合。在特定的例子中，一或兩個支撐元件可以具有玻璃強化的環氧樹脂的一結構，例如通常被稱為"FR-4"或是"BT樹脂"板結構。在另一例子中，一或兩個支撐元件例如可以實質由像是聚醯亞胺的聚合材料所組成。一或兩個支撐元件可包含一或多層的柔性材料，其在某些情形中可以在此種支撐元件的第一表面、第二表面、或是該第一及第二表面兩者露出。該柔性的材料在某些情形中可包括聚醯亞胺、聚醯胺，其通常具有小於2.0十億帕斯卡("GPa")的楊氏模數、或是在某些情形中，該柔性的材料可包含一種具有一顯著較低的，例如遠低於1.0GPa 的楊氏模數之彈性體。 As further seen in FIG. 1A, the microelectronic package 10 includes a The first support element 102 and a second support element 104. Each supporting component can be, for example, a package substrate, such as a wafer carrier or a dielectric component or structure that combines two or more of dielectric, semiconductor, and conductive materials, such as terminals, lines, contacts, and contacts. The electrically conductive structure of the aperture can be placed thereon. For example, one or both of the support members may be a sheet-like or plate-like dielectric element, or a dielectric element comprising a sheet or plate, including at least one of an inorganic or organic dielectric material, And it may comprise predominantly an inorganic material, or predominantly a polymeric material, or it may be a composite comprising inorganic and polymeric materials. Thus, by way of non-limiting example, one or both of the support elements may comprise a dielectric element comprising, for example, polyimine, polyamine, epoxy, thermoplastic, among other materials. , polymeric materials for thermoset materials. Alternatively, one or both of the support members may comprise a dielectric member comprising an inorganic dielectric material such as a cerium oxide, a cerium nitride, a cerium carbide, cerium oxynitride, aluminum oxide, and In addition to other materials, one or both of the support members may comprise a semiconductor material such as tantalum, niobium or carbon, or a combination of one or more such inorganic materials. In another example, one or both of the support members can comprise a dielectric member, such as one or more polymeric materials of the materials described above, and a combination of one or more inorganic materials. In a particular example, one or both of the support members can have a structure of glass reinforced epoxy, such as what is commonly referred to as a "FR-4" or "BT resin" plate structure. In another example, one or both of the support members may, for example, consist essentially of a polymeric material such as polyimide. One or both of the support members may comprise one or more layers of flexible material that may be exposed in some instances on either the first surface, the second surface, or both the first and second surfaces of the support member. The flexible material may, in certain instances, comprise polyimine, polyamine, which typically has a Young's modulus of less than 2.0 billion Pascals ("GPa"), or in some cases, the flexibility The material may comprise a material that has a significantly lower, for example, well below 1.0 GPa The elastomer of Young's modulus.
如同圖1A中可見的，每個支撐元件係具有第一及第二相反 朝向的表面。如同在該封裝10中所組裝的，該些支撐元件的第一表面101、105係彼此背對地朝向外，並且該些第二表面103、106彼此面對地朝向內。 一可以是一未被封裝或是封裝後的半導體晶片之微電子元件120係被安裝至該些支撐元件102、104的一或兩者的第二表面。在一特定的實施例中，該微電子元件可以是一半導體晶片，其係在其之一面具有耦接至該晶片的墊之額外的導電的結構。儘管未被展示，在一實施例中，一第二微電子元件可被安裝在該微電子元件120的一背對支撐元件104的表面129之上的一空間中。該第二微電子元件可被設置在表面129以及該第一支撐元件102的表面103之間。 As can be seen in Figure 1A, each support element has a first and second opposite The facing surface. As assembled in the package 10, the first surfaces 101, 105 of the support elements are facing away from each other, and the second surfaces 103, 106 face inwardly facing each other. A microelectronic component 120, which may be an unpackaged or packaged semiconductor wafer, is mounted to a second surface of one or both of the support components 102, 104. In a particular embodiment, the microelectronic component can be a semiconductor wafer having an additional electrically conductive structure on one of its sides that is coupled to the pad of the wafer. Although not shown, in one embodiment, a second microelectronic component can be mounted in a space of the microelectronic component 120 that faces away from the surface 129 of the support component 104. The second microelectronic element can be disposed between the surface 129 and the surface 103 of the first support element 102.
該微電子元件可以電耦接在該第二支撐元件104的一表面 106之導電的元件。如同在此揭露內容中參考一例如是一中介體、微電子元件、電路板、基板、等等之構件所用的，一導電的元件是"在"一構件的一表面的一項陳述係指出當該構件未和任何其它元件被組裝時，該導電的元件是可供利用於接觸從該構件的外部在一垂直於該構件的表面之方向上朝向該構件的表面移動的一理論上的點。因此，在一基板的一表面之一端子或是其它導電的元件可以從此種表面突出；可以是和此種表面齊平的；或者可以是相對於此種表面而凹陷在該基板內的一孔洞或是凹處中。在一例子中，該構件的"表面"可以是介電結構的一表面；然而，在特定的實施例中，該表面可以是其它材料，例如是金屬、或其它導電材料或是半導體材料的一表面。 The microelectronic component can be electrically coupled to a surface of the second support component 104 106 conductive components. As used herein to refer to a component such as an interposer, a microelectronic component, a circuit board, a substrate, or the like, a conductive component is a statement on a surface of a component that is indicated when When the member is not assembled with any other component, the electrically conductive component is a theoretical point that can be utilized to contact the movement from the exterior of the component in a direction perpendicular to the surface of the component toward the surface of the component. Thus, a terminal or other electrically conductive element on one surface of a substrate may protrude from such surface; may be flush with such surface; or may be a hole recessed in the substrate relative to such surface Or in the recess. In one example, the "surface" of the member can be a surface of the dielectric structure; however, in certain embodiments, the surface can be other materials, such as a metal, or other conductive material or a semiconductor material. surface.
在圖1A中，平行於該第一支撐元件的第一表面101的方向 在此係被稱為第一及第二橫向的方向178、179或是"水平"或"橫向"的方向，而垂直於該第一表面的方向180在此係被稱為向上或向下的方向，並且在此亦被稱為"垂直"的方向。在此參照的方向是在被參照的結構的參考系(frame of reference)中。因此，這些方向可以位在相對正常或重力參考系的任何方位。一特點係被設置"在一表面之上"比另一特點更高的高度處的一項陳述係表示該一特點是在相同的正交方向上比該另一特點相隔該表面一更大的距離。相反地，一特點係被設置"在一表面之上"比另一特點更小的高度處的一項陳述係表示該一特點是在相同的正交方向上比該另一特點相隔該表面一更小的距離。 In FIG. 1A, the direction parallel to the first surface 101 of the first support member This is referred to herein as the first and second transverse directions 178, 179 or "horizontal" or "transverse" directions, and the direction 180 perpendicular to the first surface is referred to herein as upward or downward. Direction, and here also referred to as the "vertical" direction. The direction referred to herein is in the frame of reference of the structure being referenced. Therefore, these directions can be in any orientation relative to a normal or gravity reference frame. A statement that is characterized by being placed "above a surface" at a higher elevation than another feature means that the feature is larger in the same orthogonal direction than the other feature. distance. Conversely, a statement that a feature is set "above a surface" at a height smaller than another feature indicates that the feature is one surface apart from the other feature in the same orthogonal direction. Smaller distance.
因此，在一見於圖1A的例子中，該微電子元件120可以覆 晶連接至在支撐元件104的表面106之接點126。微電子元件120係具有複數個在正面122之接點124，該正面122係朝向第二支撐元件104的第二表面106，該些接點124係面對該第二支撐元件之對應的接點126，並且透過可包含接合金屬的凸塊121來和該些接點126連結、或是其可包含其它類型的接合元件，例如尤其是微型柱、柱。該些接點可以在該正面122用一或多個延伸在一第一方向上的列、用一或多個在一與該第一方向交叉的第二方向上延伸的行、或是以一或多個列以及一或多個行兩者來加以配置。此種接點可被設置在方向178、179上的任意位置處、或是可被設置在一或多個列中、一或多個行中、或是在相鄰該微電子元件的一或多個邊緣127之一或多個列以及一或多個行中。在一特定的例子中，該些接點124可以用一具有兩個或多個列的接點並且具有兩個或多個行的接點的區域陣列來加 以散佈在橫跨該微電子元件的正面的至少一部分。一底膠填充115可被設置以圍繞該些例如是凸塊121的連接之個別的連接，其在某些情形中可以機械式加固該些連接。 Therefore, in the example seen in FIG. 1A, the microelectronic component 120 can be overcoated. The crystal is connected to a junction 126 at the surface 106 of the support member 104. The microelectronic component 120 has a plurality of contacts 124 on the front side 122 that face the second surface 106 of the second support member 104, the contacts 124 facing the corresponding contacts of the second support member 126, and the contacts 126 may be joined by bumps 121 that may include bonding metal, or they may comprise other types of bonding elements, such as, in particular, micro-pillars, columns. The contacts may be on the front side 122 with one or more rows extending in a first direction, one or more rows extending in a second direction intersecting the first direction, or a Or multiple columns and one or more rows to configure. Such contacts may be placed at any location in directions 178, 179, or may be disposed in one or more columns, in one or more rows, or adjacent one or both of the microelectronic components One or more of the plurality of edges 127 and one or more rows. In a particular example, the contacts 124 can be added with an array of regions having contacts of two or more columns and having contacts of two or more rows. To be spread over at least a portion of the front side of the microelectronic element. A primer fill 115 can be provided to surround the individual connections, such as the connections of the bumps 121, which in some cases can mechanically stiffen the connections.
或者是，其並非覆晶的連接，該些接點124可被配置在一或 多個列的接點及/或一或多個行的接點內的位置，其係與一延伸在該支撐元件104的第一及第二表面105、106之間的孔或"接合窗口"(未顯示)對準。在此種情形中，該微電子元件的接點124可以透過連結至該些接點124的引線來與在該第二支撐元件104的第一表面105之例如是端子142、142'的端子耦接。在一特定的例子中，該些引線可以是例如引線接合的導線引線(未顯示)，其係延伸穿過該孔並且連結至該些接點124以及在該第一表面105之對應的接點(未顯示)。在另一例子中，該些引線可以是分別包含一延伸作為一沿著該第一或第二表面105、106的線路之第一部分以及一與該第一部分為一體的從該線路延伸到該孔的區域內並且連結至該接點之第二部分的引線。 Alternatively, it is not a flip chip connection, and the contacts 124 can be configured in one or A plurality of columns of contacts and/or locations within the contacts of the one or more rows are associated with a hole or "joining window" extending between the first and second surfaces 105, 106 of the support member 104. (not shown) aligned. In this case, the contacts 124 of the microelectronic component can be coupled to the terminals of the first surface 105 of the second support component 104, such as terminals 142, 142', through leads connected to the contacts 124. Pick up. In a particular example, the leads may be, for example, wire bonded wire leads (not shown) extending through the holes and joined to the contacts 124 and corresponding contacts on the first surface 105 (not shown). In another example, the leads may each include a first portion extending along a line along the first or second surface 105, 106 and a first portion integral with the first portion extending from the line to the hole Within the area and connected to the leads of the second portion of the contact.
在又一例子中，儘管未被展示，該微電子元件的一後表面 129可以背向接合至該第二支撐元件的第二表面106，並且該微電子元件的正面122可以變成是背對支撐元件104的第一表面106，其中該微電子元件的接點124係背對該第二表面106。在此種例子中，該些接點124可以透過導電的結構來與在該第二支撐元件的第二表面106之對應的接點電耦接，該導電的結構係延伸在該正面122之上並且延伸超過該微電子元件的邊緣127。 In yet another example, although not shown, a back surface of the microelectronic component 129 can be backed to the second surface 106 of the second support member, and the front surface 122 of the microelectronic element can become a first surface 106 that faces away from the support member 104, wherein the contacts 124 of the microelectronic element are backed The second surface 106. In such an example, the contacts 124 can be electrically coupled to corresponding contacts on the second surface 106 of the second support member via a conductive structure that extends over the front surface 122 And extending beyond the edge 127 of the microelectronic component.
如同圖1A中進一步可見的，該微電子封裝10可包含一單 石囊封體150，該單石囊封體150係接觸該第一及第二支撐元件的一支撐元件的該第二表面103或106來加以形成，並且其係接觸下列的至少一個來加以形成：該第一及第二支撐元件的另一支撐元件的第二表面、以及一接觸該另一支撐元件的第二表面所形成之第二囊封體。該囊封體150可以接觸該第一及第二支撐元件102、104的每一個的第二表面103、106來加以形成。 As further seen in FIG. 1A, the microelectronic package 10 can include a single a stone capsule 150 that is formed by contacting the second surface 103 or 106 of a support member of the first and second support members, and which is formed by contacting at least one of the following a second surface of the other support element of the first and second support members, and a second encapsulation formed by a second surface contacting the other support member. The encapsulant 150 can be formed in contact with the second surfaces 103, 106 of each of the first and second support members 102, 104.
如同圖1A中進一步可見的，微電子封裝10係包含成對的 導電的第一連接器161以及導電的第二連接器162，該些導電的第一連接器161係突出在該第一支撐元件102的第二表面103之上，其係與突出在該第二支撐元件104的第二表面106之上的對應的導電的第二連接器162對準並且機械式及電性地耦接。在該第一支撐元件102的第一表面101之第一封裝端子141係透過個別對的第一連接器161對準並且例如是連結的電耦接該些第二連接器162，來與在該第二支撐元件104的第一表面105之對應的第二封裝端子142電耦接。 As further seen in Figure 1A, the microelectronic package 10 is comprised of pairs a conductive first connector 161 and a conductive second connector 162 protruding from the second surface 103 of the first support member 102 and protruding from the second A corresponding electrically conductive second connector 162 over the second surface 106 of the support member 104 is aligned and mechanically and electrically coupled. The first package terminals 141 of the first surface 101 of the first support member 102 are aligned through the first pair of first connectors 161 and are electrically coupled, for example, to the second connectors 162. The corresponding second package terminals 142 of the first surface 105 of the second support member 104 are electrically coupled.
如同圖1A中進一步可見的，下列的至少一個：該些第一連 接器以及該些第二連接器係包含導電塊，例如是具有一種例如錫、銦的接合金屬、焊料或是一種共晶材料、或是一種具有金屬微粒內嵌在一聚合材料中之導電的基質材料的塊。在特定的實施例中，該些第一連接器、第二連接器、或是兩者可以實質由焊料所組成。在圖1描繪的特定實施例中，該些第一連接器以及第二連接器可以分別包含一種接合金屬。在一特定的例子中，該些第一及第二連接器的一或兩者可包含一例如是核心171或核心172之固體的核心，一種接合金屬可被設置在該核心之上。此種固體的核心171、172可被利用以使得在該第一及第二支撐元件102、104的第二表 面103、106之間的一預設的間隔變得容易、或是維持一預設的間隔。固體的核心可以是導電的、半導的、或是介電的材料、或是一或多個此種材料的一組合。在一特定的例子中，該些固體的核心可以是由非焊料的材料所做成，其係可藉由焊料加濕並且可以被塗覆焊料。在一例子中，一固體的核心可以實質由銅或是其它具有一熔點高於該些第一及第二連接器被彼此連結所在的一接合溫度的導電材料所組成，即如同將會在以下加以描述者。 As further seen in Figure 1A, at least one of the following: the first connection The connector and the second connectors comprise a conductive block, such as a bonding metal such as tin or indium, solder or a eutectic material, or an electrically conductive metal particle embedded in a polymeric material. A block of matrix material. In a particular embodiment, the first connectors, the second connectors, or both may consist essentially of solder. In the particular embodiment depicted in FIG. 1, the first and second connectors may each comprise a bonding metal. In a particular example, one or both of the first and second connectors may comprise a solid core such as core 171 or core 172, and a bonding metal may be disposed over the core. Such solid cores 171, 172 can be utilized to cause a second table at the first and second support members 102, 104 A predetermined interval between the faces 103, 106 becomes easy or maintains a predetermined interval. The core of the solid can be a conductive, semiconductive, or dielectric material, or a combination of one or more such materials. In a particular example, the cores of the solids may be made of a non-solder material that is wettable by solder and may be coated with solder. In one example, a solid core may consist essentially of copper or other electrically conductive material having a melting point higher than a junction temperature at which the first and second connectors are joined to each other, ie as will be below Describe it.
在一特定的實施例中，該些固體的核心可包括一具有一熔點 高於該接合溫度的焊料、或是實質由一具有一熔點高於該接合溫度的焊料所組成，並且因此可具有比一塗覆該固體的核心之焊料的熔點高的一熔點。在另一例子中，一固體的核心可以實質由玻璃、陶瓷或是半導體材料所組成。具有固體的核心171之第一連接器可以對準及連結並不具有固體的核心之第二連接器。相反地，具有固體的核心172之第二連接器可以對準及連結並不具有固體的核心之第一連接器。在另一實施例中，儘管未被展示，具有固體的核心之第一連接器可以對準及連結具有固體的核心之第二連接器。 In a particular embodiment, the solid cores may comprise a melting point The solder above the bonding temperature, or substantially consists of a solder having a melting point higher than the bonding temperature, and thus may have a melting point higher than the melting point of the solder of a core coated with the solid. In another example, a solid core can consist essentially of glass, ceramic, or semiconductor materials. The first connector of the core 171 having a solid can align and join the second connector of the core that does not have a solid. Conversely, the second connector of the solid core 172 can align and join the first connector of the core that does not have a solid. In another embodiment, although not shown, the first connector with the solid core can align and join the second connector with the solid core.
在此提供的各種例子中，可看出的是該些第一連接器以及該 些第二連接器分別可以具有末端163、164，該些末端163、164係藉由其在該第一及第二支撐元件的第二表面之上的最大高度所界定，並且該些第一連接器的末端163可以和該些第二連接器的末端164對準及連結。如同圖1A中進一步可見的，在一例子中，在第一支撐元件102的第一表面之第一端子之間的一間距"a"可以是和在該第二支撐元件104的第一表面之第二端子142之間的一間距"a"相同的。 Among the various examples provided herein, it can be seen that the first connectors and the The second connectors may each have an end 163, 164 defined by their maximum height above the second surface of the first and second support members, and the first connections The end 163 of the device can be aligned and coupled with the ends 164 of the second connectors. As further seen in FIG. 1A, in an example, a spacing "a" between the first terminals of the first surface of the first support member 102 can be and at the first surface of the second support member 104. A spacing "a" between the second terminals 142 is the same.
參照圖2，在一微電子封裝210的另一例子中，該些第一連 接器181、第二連接器182或是兩者可包括實質剛性固體的金屬柱，其係突出在個別的支撐元件的第二表面之上。在一例子中，該些柱可以實質由銅所組成。通常，該些柱係在該微電子組件的一厚度的一垂直的方向180上具有垂直的尺寸183、184。該些垂直的尺寸範圍通常在50到500微米之間。 每個柱之垂直的尺寸通常是大於此種柱在一平行於該柱從其延伸的第一構件或第二構件的一平面之第二方向178上之個別的寬度185或186的一半。 在一特定的實施例中，該些柱可以透過一包含蝕刻以從一金屬層移除材料的製程來加以形成，此可以使得製造一具有第一柱181的末端163'是具有一高度的共平面性之封裝變得容易。同樣地，此種製程可以使得製造一具有第二柱182的末端164'是具有一高度的共平面性之封裝變得容易。典型的蝕刻製程係傾向形成在形狀上是截頭錐的柱，因為該材料移除係在垂直的方向180以及橫向的方向178、179上進行。然而，某些減去性(subtractive)製程可以降低在該橫向的方向上的材料移除程度，使得以此種方式形成的柱可以具有更為圓柱形的形狀。在又一例子中，該些柱可以藉由電鍍一金屬到一例如是光罩之臨時的層的開口中，並且接著移除該臨時的層來加以形成。實心或中空的金屬柱可以產生自此種電鍍製程。 Referring to FIG. 2, in another example of a microelectronic package 210, the first connections The connector 181, the second connector 182, or both may include a substantially rigid solid metal post that protrudes over the second surface of the individual support member. In one example, the posts may consist essentially of copper. Typically, the posts have vertical dimensions 183, 184 in a vertical direction 180 of a thickness of the microelectronic assembly. These vertical dimensions typically range from 50 to 500 microns. The vertical dimension of each post is typically greater than half of the individual width 185 or 186 of the post in a second direction 178 parallel to a plane of the first member or second member from which the post extends. In a particular embodiment, the posts can be formed by a process including etching to remove material from a metal layer, which can result in the fabrication of a tip 163' having a first post 181 having a height Flat packaging becomes easy. As such, such a process can facilitate the fabrication of a package having a second post 164' that is a coplanar package having a height. A typical etching process tends to form a column that is frustoconical in shape because the material removal is performed in a vertical direction 180 and a transverse direction 178, 179. However, certain subtractive processes may reduce the extent of material removal in the lateral direction such that the posts formed in this manner may have a more cylindrical shape. In yet another example, the posts can be formed by plating a metal into an opening, such as a temporary layer of the reticle, and then removing the temporary layer. Solid or hollow metal posts can be produced from such electroplating processes.
該些金屬柱將被連結的另一支撐元件之個別的第一或第二 連接器191、192可包括導電塊，例如一像是焊料、錫、銦的接合金屬或是一共晶材料。在一例子中，該些第一連接器221、第二連接器222或是兩者可包括突出在該個別的支撐元件的第二表面之上的柱形凸塊。在特定的例子中，該柱形凸塊可以是具有金、銅、或是可以實質由銅所組成。在一例 子中，一具有一種例如是鈀、鈦、鎢、鉭、鈷、鎳的金屬、或是例如此種金屬中的一或多種的一化合物之導電的金屬化合物之電鍍的塗層或阻障層可以存在於該柱形凸塊與其被耦接至的導電塊231之介面的表面處。在圖2以及在此的許多其它圖中，封裝210的端子以及其它元件可以從該展示的特定視圖被省略，儘管它們仍然可能存在。 Individual first or second of the other supporting elements to which the metal posts are to be joined The connectors 191, 192 may comprise a conductive block such as a bonding metal such as solder, tin, indium or a eutectic material. In an example, the first connector 221, the second connector 222, or both may include stud bumps that protrude above the second surface of the individual support member. In a particular example, the stud bumps can be gold, copper, or can be substantially composed of copper. In one case An electroplated coating or barrier layer having a conductive metal compound such as a metal such as palladium, titanium, tungsten, rhenium, cobalt, nickel, or a compound such as one or more of such metals. It may be present at the surface of the interface between the stud bump and the conductive block 231 to which it is coupled. In FIG. 2 and many other figures herein, the terminals of package 210, as well as other elements, may be omitted from the particular views of the display, although they may still be present.
圖3係描繪該微電子封裝10的一組件14，其中一外部的構 件12係堆疊在該封裝10之上並且與其第一端子141電耦接。例如，該外部的構件12可以使得接點148透過具有一例如是錫、銦、焊料、共晶金屬成分、等等的接合金屬的導電塊144而被連結至該些第一端子141。在一例子中，該外部的構件12可以是一其上具有線路及接點的電路面板，並且其中可具有額外的構件、或是耦接至其的額外的構件。在某些進一步的例子中，該外部的構件可以是一封裝或是未被封裝的微電子元件。例如，構件12可以是一微電子封裝，其係包括一具有一組和該些端子141連結的接點148之第二微電子元件320。 3 depicts an assembly 14 of the microelectronic package 10 with an external structure The piece 12 is stacked on top of the package 10 and is electrically coupled to its first terminal 141. For example, the outer member 12 can be joined to the first terminals 141 by a conductive block 144 having a bonding metal such as tin, indium, solder, eutectic metal composition, or the like. In one example, the outer member 12 can be a circuit panel having wires and contacts thereon and can have additional components or additional components coupled thereto. In some further examples, the external component can be a packaged or unpackaged microelectronic component. For example, component 12 can be a microelectronic package that includes a second microelectronic component 320 having a set of contacts 148 that are coupled to terminals 141.
如同進一步在圖3中所示的，該微電子封裝10可以具有附 接至該第二端子142之導電的連結元件146，例如具有一像是焊料、錫、銦的接合金屬或共晶材料或是其它此種材料的塊，該些連結元件146是用於連結該微電子封裝10至一外部的構件16的接點147。該外部的構件16在某些情形中可以是一其上具有線路及接點的電路面板，並且其中可具有額外的構件、或是耦接至其的額外的構件。在某些進一步的例子中，該外部的構件可以是一封裝或是未被封裝的微電子元件。 As further shown in FIG. 3, the microelectronic package 10 can have an attached The conductive connecting member 146 connected to the second terminal 142 has, for example, a bonding metal such as solder, tin, or indium or a eutectic material or a block of other such materials, and the connecting members 146 are used to connect the The microelectronic package 10 is connected to a contact 147 of an outer member 16. The outer member 16 may in some cases be a circuit panel having wires and contacts thereon and may have additional components or additional components coupled thereto. In some further examples, the external component can be a packaged or unpackaged microelectronic component.
圖4A-B係描繪根據以上相關圖1A-B所述者的一變化之一 微電子封裝410，其中該些第一端子141在第二方向178上的間距"b"可以是不同於該些第二端子在該第二方向上的間距"a"。該些第一端子141的間距亦可以是不同於該些第二端子在一平行於該第一表面101並且與該第一及第二方向為橫向的第三方向179上的間距。因此，如圖所示，該些第一端子的間距可以在該第二方向、或是該第三方向、或是兩者上大於該些第二端子的間距。或者是，該些第一端子的間距可以在該第二方向、或是該第三方向、或是兩者上小於該些第二端子的間距。在此提出的實施例的任一個或是全部中，在該些第一端子以及第二端子的間距之間的關係可以是如在此相關以上的圖1A-B所述的、或是如在此相關圖4A及4B所述的。 4A-B depict one of the variations in accordance with the above related Figures 1A-B The microelectronic package 410, wherein the spacing "b" of the first terminals 141 in the second direction 178 may be different from the spacing "a" of the second terminals in the second direction. The pitch of the first terminals 141 may also be different from the spacing of the second terminals in a third direction 179 parallel to the first surface 101 and transverse to the first and second directions. Therefore, as shown, the pitch of the first terminals may be greater than the pitch of the second terminals in the second direction, or the third direction, or both. Alternatively, the pitch of the first terminals may be smaller than the pitch of the second terminals in the second direction, or the third direction, or both. In any or all of the embodiments presented herein, the relationship between the pitches of the first and second terminals may be as described above in relation to Figures 1A-B, or as in This is described in relation to Figures 4A and 4B.
圖5係描繪見於圖1A-B中的微電子封裝的一變化，其中第 一及第二連接器係被展示為具有實質剛性固體的金屬第一柱281以及第二柱282的形式，每一個柱可具有一如上相關圖2所述的結構。然而，在此例子中，該些第一柱281的末端263係和該些第二柱282之對應的末端264對準及連結。在所展示的例子中，接觸該些柱的末端及邊緣表面285的導電塊291可以連結每一對第一柱及第二柱。然而，在特定的例子中，該些末端281、282可以透過金屬到金屬的連結或是擴散接合而被連結一起，而不需要使用焊料。 Figure 5 is a depiction of a variation of the microelectronic package seen in Figures 1A-B, wherein The first and second connectors are shown in the form of a metal first post 281 having a substantially rigid solid and a second post 282, each of which may have a structure as described above in relation to FIG. However, in this example, the ends 263 of the first posts 281 are aligned and joined with the corresponding ends 264 of the second posts 282. In the illustrated example, conductive bumps 291 that contact the ends of the posts and edge surfaces 285 can join each pair of first and second posts. However, in certain instances, the ends 281, 282 can be joined together by metal to metal bonding or diffusion bonding without the use of solder.
在圖5所示的另一例子中，突出在該第二支撐元件104的第 二表面之上的例如是第二連接器382的連接器可以是具有實質剛性固體的金屬柱的形式，並且該些第一連接器381可以藉由沉積一金屬以接觸該些第二連接器382的末端264'，例如藉由電鍍一金屬以接觸該些末端表面264'來加以形成。在一例子中，第一端子241可藉由一同時形成該些第一連接 器381以及該些第一端子的一金屬層之電鍍製程來加以形成。 In another example shown in FIG. 5, protruding from the second support member 104 The connectors above the two surfaces, such as the second connector 382, may be in the form of metal posts having substantially rigid solids, and the first connectors 381 may be contacted by the second connectors 382 by depositing a metal. The end 264' is formed, for example, by plating a metal to contact the end surfaces 264'. In an example, the first terminal 241 can form the first connections by simultaneously The 381 is formed by a plating process of a metal layer of the first terminals.
圖6係描繪根據以上相關圖1A-B或是圖4A-B所展示及敘 述的實施例的一變化的一微電子封裝610，其中該微電子封裝係包含第一及第二囊封體650、152。在一例子中，例如是連接器161或連接器171的第一連接器可以部分被囊封在第二囊封體152之內，其中該些第一連接器的末端163係連結例如是連接器162或連接器172之對應的第二連接器的末端164，以便於在該第一及第二支撐元件之間提供導電的路徑。在此例中，單石囊封體650可以在該些第一連接器和該些第二連接器連結之後被形成，使得該單石囊封體係接觸該微電子元件120的背對該微電子元件被安裝到的支撐元件104的一面125來加以形成。在一例子中，該單石囊封體650可接觸該第二囊封體152來加以形成，使得所產生的封裝係變成具有一結構上強健的囊封體之一體的封裝，其係整合該第二囊封體152以及該單石囊封體650，該單石囊封體650係形成在原本的第二囊封體的頂端及側表面153、154上以及在該第一及第二支撐元件102、104的第二表面103、106上。 該封裝610可具有其中該單石囊封體650接觸該第二囊封體152的表面153、154並且在此種表面上形成之內部的介面。 Figure 6 is a diagram depicting and illustrating according to the above related Figures 1A-B or 4A-B A variation of a microelectronic package 610 of the embodiment, wherein the microelectronic package comprises first and second encapsulants 650, 152. In an example, the first connector, such as the connector 161 or the connector 171, may be partially encapsulated within the second encapsulant 152, wherein the ends 163 of the first connectors are coupled, for example, as connectors. 162 or the end 164 of the corresponding second connector of connector 172 to facilitate providing a conductive path between the first and second support members. In this example, the monolithic encapsulation 650 can be formed after the first connectors and the second connectors are joined such that the monolithic encapsulation system contacts the microelectronics 120 facing away from the microelectronics A side 125 of the support member 104 to which the component is mounted is formed. In one example, the monolithic encapsulation 650 can be formed in contact with the second encapsulant 152 such that the resulting encapsulation becomes a package having a structurally robust encapsulant that is integrated a second encapsulation 152 and the monolithic encapsulation 650 formed on the top and side surfaces 153, 154 of the original second encapsulation and on the first and second supports On the second surfaces 103, 106 of the elements 102, 104. The package 610 can have an internal interface in which the monolithic encapsulant 650 contacts the surfaces 153, 154 of the second encapsulant 152 and is formed on such a surface.
如同進一步在圖7中可見的，在圖6所示的實施例的一變化中，該些第一連接器可以是連結至第二連接器的實質剛性固體的金屬柱181。在一例子中，該些第二連接器可以是如上所述的導電塊162。 As can be seen further in Figure 7, in a variation of the embodiment shown in Figure 6, the first connectors can be substantially rigid solid metal posts 181 that are joined to the second connector. In an example, the second connectors can be conductive blocks 162 as described above.
圖8係描繪可見於圖6中的微電子封裝610的一組件和另一構件12連結，以形成一微電子組件是類似於以上相關於圖3所述的微電子組件。 8 is a diagram depicting a component of microelectronic package 610 as seen in FIG. 6 coupled to another member 12 to form a microelectronic assembly similar to the microelectronic assembly described above in relation to FIG.
圖9係描繪另一變化，其中該第二囊封體952係被形成以使 得其係部分地囊封該些第二連接器962，而不是部分地囊封該些第一連接器。在此變化中，該單石囊封體950可以接觸該第二囊封體的頂端及側表面953、954並且接觸該微電子元件120的面125來加以形成。囊封體950可以接觸該第一及第二支撐元件的第二表面103、106來加以形成。 Figure 9 depicts another variation in which the second encapsulant 952 is formed such that It is not necessary to partially encapsulate the second connectors 962, rather than partially encapsulating the first connectors. In this variation, the monolithic encapsulant 950 can be formed by contacting the top and side surfaces 953, 954 of the second encapsulant and contacting the face 125 of the microelectronic element 120. The encapsulant 950 can be formed in contact with the second surfaces 103, 106 of the first and second support members.
圖10係描繪根據另一變化的一微電子封裝1010，其中並不 是如同見於圖9中的導電塊或是塗覆焊料的固體的核心，該些第二連接器可以是實質剛性固體的金屬柱982，並且可以和例如是導電塊161的第一連接器連結。在該封裝1010的另一變化(未顯示)中，該些第一連接器可以是實質剛性固體的金屬柱，並且該些第二連接器可以是導電塊。 Figure 10 depicts a microelectronic package 1010 in accordance with another variation, which is not As with the core of the conductive block or solder-coated solid as seen in Figure 9, the second connectors may be metal posts 982 of substantially rigid solids and may be joined to a first connector, such as conductive block 161. In another variation (not shown) of the package 1010, the first connectors can be substantially rigid solid metal posts, and the second connectors can be conductive blocks.
圖11-13係描繪在一種形成根據圖6中可見的實施例的一微 電子封裝610之方法中的階段。因此，如同在圖11中所繪，一包含一第一支撐元件102的次組件21可被形成為具有突出在其第二表面103之上的第一連接器161以及一圍繞個別的第一連接器161並且將該些第一連接器彼此隔絕的囊封體152。在一例子中，該囊封體152可以具有一方形或矩形框架的形式，其在所展示的視圖中的一方向178上具有寬度，其中一在該框架中的中央開口的尺寸係被製作以容納該微電子元件120。該些第一連接器161的末端163係在該囊封體152的一表面153露出，並且可以在朝向該第二支撐元件104的方向180上突出在該表面153之上、或是可以和該表面153齊平的、或是可以在一朝向該第一支撐元件的表面103的方向上凹陷到該表面153之下。 Figure 11-13 depicts a microscopic formation of an embodiment according to Figure 6 The stage in the method of electronic packaging 610. Thus, as depicted in Figure 11, a subassembly 21 comprising a first support member 102 can be formed with a first connector 161 projecting over its second surface 103 and a first connection surrounding the individual The 161 and the capsules 152 that isolate the first connectors from each other. In one example, the encapsulant 152 can have the form of a square or rectangular frame having a width in a direction 178 in the illustrated view, wherein a dimension of the central opening in the frame is made The microelectronic component 120 is housed. The ends 163 of the first connectors 161 are exposed at a surface 153 of the encapsulation 152 and may protrude above the surface 153 in a direction 180 toward the second support member 104, or may The surface 153 is flush or may be recessed below the surface 153 in a direction toward the surface 103 of the first support member.
在一例子中，次組件21可藉由形成該第一支撐元件102以 及突出在該第一支撐元件102的第二表面103之上的第一連接器161之一結構來加以形成。第一連接器161可以是導電塊、或者可以是如同相關在以上的其它實施例所敘述的其它第一連接器。一囊封體接著可以被模製到該結構之上，其例如是藉由注入一種囊封材料到一用於其的模具中，同時該模具的一板係抵靠該些第一連接器161的末端163，使得末端163可以保持未被該囊封材料覆蓋、或是未完全被該囊封材料覆蓋的。後續的溢料去除(deflashing)可被用來進一步露出該些模製的第一連接器的末端。在一例子中，該模具板可包含尺寸被製作成在接近該些第一連接器的末端163之處容納該些第一連接器的末端部分之模具框(chase)，使得該囊封材料流動到該些第一連接器的末端部分周圍，並且該所產生的次組件21的第一連接器的末端163係延伸在該模製的囊封體的表面153之上。類似地，該模具板在與該些第一連接器對準的位置處可包含突出部，使得在所產生的次組件21中的第一連接器係變成凹陷在該模製的囊封體的表面153之下。 In an example, the secondary component 21 can be formed by forming the first support component 102 And forming a structure of the first connector 161 protruding above the second surface 103 of the first support member 102. The first connector 161 can be a conductive block or can be other first connectors as described in connection with other embodiments above. An encapsulant can then be molded over the structure, for example by injecting an encapsulating material into a mold for it, while a plate of the mold abuts the first connectors 161 The end 163 is such that the end 163 can remain uncovered by the encapsulating material or not completely covered by the encapsulating material. Subsequent deflashing can be used to further expose the ends of the molded first connectors. In one example, the mold plate can include a mold that is sized to receive the end portions of the first connectors proximate the ends 163 of the first connectors such that the encapsulating material flows To the end portions of the first connectors, and the ends 163 of the first connectors of the resulting subassembly 21 extend over the surface 153 of the molded encapsulant. Similarly, the mold plate may include a protrusion at a position aligned with the first connectors such that the first connector in the resulting sub-assembly 21 becomes recessed in the molded encapsulant Below surface 153.
該囊封體152可包含一聚合材料、或是實質由一聚合材料所 組成。該囊封體可被製成的材料的例子是一灌封(potting)化合物、環氧樹脂、液晶聚合物、熱塑性塑膠、以及熱固性聚合物。在一特定的例子中，該囊封體可包含一種聚合基質以及在該聚合基質內之載有微粒的材料，其例如是藉由模製或者是沉積一種具有該載有微粒的材料於其中之未固化的聚合材料到該第一支撐元件102的第二表面103之上來加以形成。在一例子中，該載有微粒的材料可選配地具有一低的熱膨脹係數("CTE")，使得該所產生的囊封體152可具有一低於攝氏每度10個百萬分率(在以下稱為"ppm/℃")的CTE。在一例子中，該囊封體可包含一種填充物材料，例如尤其是玻璃 或陶瓷介電填充物或是半導體填充物。 The encapsulant 152 may comprise a polymeric material or be substantially comprised of a polymeric material. composition. Examples of materials from which the encapsulant can be made are a potting compound, an epoxy resin, a liquid crystal polymer, a thermoplastic, and a thermosetting polymer. In a particular example, the encapsulant can comprise a polymeric matrix and a particulate-loaded material within the polymeric matrix, for example by molding or depositing a material having the particulate-bearing material therein. An uncured polymeric material is formed over the second surface 103 of the first support member 102. In one example, the particulate-loaded material optionally has a low coefficient of thermal expansion ("CTE") such that the resulting encapsulated body 152 can have a rate of 10 parts per million below Celsius. (CTE referred to below as "ppm/°C"). In an example, the encapsulant may comprise a filler material, such as especially glass. Or ceramic dielectric filler or semiconductor filler.
如同圖12中可見的，該次組件21接著可被移動到定位，以 用於和附接至一第二次組件22的第二支撐元件104之對應的第二連接器162接合。例如，如同在圖12中所繪，該些第一及第二連接器可以彼此對準，並且該第一及第二支撐元件可被帶領到足以讓一內含在該些第一連接器以及第二連接器中的至少一種中的接合金屬能夠流動並且在該些第一連接器以及第二連接器之間形成接合點的狀況。例如，在一其中該些第一連接器、第二連接器或是兩者的一溫度係被升高到該接合金屬將會流動所在的一溫度的期間之前或是之中，該些第一連接器可以被帶領到與對準的第二連接器接觸。 As can be seen in Figure 12, the subassembly 21 can then be moved to position to A second connector 162 for engagement with a second support member 104 attached to a second subassembly 22 is engaged. For example, as depicted in FIG. 12, the first and second connectors can be aligned with each other, and the first and second support members can be led enough to allow one of the first connectors to be included A bonding metal in at least one of the second connectors is capable of flowing and forming a condition of a joint between the first connectors and the second connectors. For example, before or during a period in which the temperature of the first connector, the second connector, or both is raised to a temperature at which the bonding metal will flow, the first The connector can be led into contact with the aligned second connector.
如同進一步在圖13中可見的，一種囊封材料650可被施加 以覆蓋該些連結的第一及第二連接器161、162，其例如是藉由模製一種例如是可流動的包覆成型(overmold)材料之囊封材料到該第一支撐元件102的第二表面103之上，並且填入在該第一及第二支撐元件102、104之間的空間以及在微電子元件及支撐元件102與該微電子元件相鄰的表面103之間的空間內。 As can be seen further in Figure 13, an encapsulating material 650 can be applied To cover the first and second connectors 161, 162 of the joints, for example by molding an encapsulating material such as a flowable overmold material to the first support member 102 Above the two surfaces 103, and filling the space between the first and second support members 102, 104 and the space between the microelectronic element and the surface 103 of the support member 102 adjacent the microelectronic element.
以此種方式，如同在圖13中所示，一種組件或封裝610係被形成，例如是以上進一步相關圖6所述者。 In this manner, as shown in FIG. 13, an assembly or package 610 is formed, such as described above in relation to FIG.
參照圖14，在以上相關圖11-13所述的方法的一變化中，第二連接器162可以和該些第一連接器161在該第二囊封體的表面153露出之末端163連結。接著，該些第二連接器162可以和在該第二支撐元件的第二表面106之例如是墊、柱或是其它導電的連接器之導電的元件166連結，以 形成一例如是圖12中可見的組件、或是與其類似的組件。接著，該囊封材料650可被施加至該組件，以形成一如同圖13中可見而且如同以上進一步相關圖6所述的組件610。 Referring to Figure 14, in a variation of the method described above with respect to Figures 11-13, the second connector 162 can be coupled to the exposed ends 163 of the first connectors 161 at the surface 153 of the second encapsulant. Then, the second connectors 162 can be coupled to the conductive elements 166 of the second surface 106 of the second support member, such as pads, posts or other conductive connectors. Forming a component such as that seen in Figure 12, or a component similar thereto. Next, the encapsulating material 650 can be applied to the assembly to form an assembly 610 as seen in Figure 13 and as described further above in relation to Figure 6.
儘管未被明確地展示在該些圖中，但是以上相關圖11-14所 述的方法都可以在無限制下，被利用於以上相關圖1A-B、2、4A-B、5、6及7所描述的第一連接器及第二連接器的類型中之任一種。有關在此的微電子封裝及組件中之任一種或是全部，該些形成囊封體中的一或多個、或是用於形成該些第一連接器及/或第二連接器以及端子中的任一種或是全部的製程可以是如同在美國申請案11/166,982(Tessera 3.0-358 CIP)；11/717,587(Tessera 3.0-358 CIP CIP)；11/666,975(Tessera 3.3-431)；11/318,404(Tessera 3.0-484)；12/838,974(Tessera 3.0-607)；12/839,038(Tessera 3.0-608)；12/832,376(Tessera 3.0-609)以及09/685,799(TIPI 3.0-201)中進一步所展示及敘述者，該些申請案的揭露內容係被納入在此作為參考。 Although not explicitly shown in the figures, the above related figures 11-14 Any of the methods described above can be utilized without limitation to any of the types of first connector and second connector described above with respect to FIGS. 1A-B, 2, 4A-B, 5, 6, and 7. Regarding any or all of the microelectronic packages and components herein, the ones forming one or more of the encapsulants or forming the first connectors and/or the second connectors and the terminals Any or all of the processes may be as in the US application 11/166,982 (Tessera 3.0-358 CIP); 11/717,587 (Tessera 3.0-358 CIP CIP); 11/666,975 (Tessera 3.3-431); Further in /318,404 (Tessera 3.0-484); 12/838,974 (Tessera 3.0-607); 12/839,038 (Tessera 3.0-608); 12/832,376 (Tessera 3.0-609) and 09/685,799 (TIPI 3.0-201) The disclosures of the applications are hereby incorporated by reference.
圖15-17係描繪在一種形成根據圖9中可見的實施例之一微 電子封裝910的方法中的階段。在此變化中，如同圖16中可見的，在該些第二連接器162和個別的第一連接器161連結以形成一組件之前，在該第二支撐元件103上的第二連接器162係部分被囊封在第二囊封體952之內。之後，一囊封體950可被施加以形成一如同圖17中可見並且如上相關圖9所述之組件910，其中囊封體950可以接觸該第二囊封體952的表面953、954以及該第一及第二支撐元件102、104的第二表面103、106。 Figure 15-17 depicts one of the embodiments formed in accordance with Figure 9 The stage in the method of electronic package 910. In this variation, as seen in FIG. 16, the second connector 162 on the second support member 103 is coupled before the second connector 162 and the individual first connector 161 are joined to form a component. Portions are encapsulated within the second encapsulant 952. Thereafter, an encapsulant 950 can be applied to form an assembly 910 as seen in FIG. 17 and as described above in relation to FIG. 9, wherein the encapsulant 950 can contact the surfaces 953, 954 of the second encapsulant 952 and Second surfaces 103, 106 of the first and second support members 102, 104.
圖18係描繪以上相關圖15-17所述的方法的一變化，其中 連接器165可以和該些第二連接器162在該第二囊封材料的表面953露出之 末端164連結。接著，該些連接器165可以和在該第一支撐元件102的第二表面103之例如是墊、柱或是其它導電的連接器之導電的元件266連結，以形成一例如是見於圖16中的組件或是與其類似的組件。接著，一種囊封材料950可被施加至該組件以形成一如同圖17中可見並且如上相關圖9所述之組件910。 Figure 18 is a depiction of a variation of the method described above in relation to Figures 15-17, wherein The connector 165 and the second connectors 162 are exposed on the surface 953 of the second encapsulating material. The ends 164 are joined. The connectors 165 can then be coupled to conductive elements 266 of the second surface 103 of the first support member 102, such as pads, posts or other conductive connectors, to form, for example, as seen in FIG. Component or a component similar to it. Next, an encapsulating material 950 can be applied to the assembly to form an assembly 910 as seen in FIG. 17 and as described above in relation to FIG.
圖19係描繪根據一例子的一組件1110，其中第一支撐元件 102係包含一延伸在其第一及第二表面101、103之間的開口155。在一例子中，開口可被利用作為一埠，一種囊封材料可以在製造該組件1110時透過該埠而被供應到一在該第一及第二支撐元件之間的內部空間中。 Figure 19 depicts an assembly 1110 in accordance with an example, wherein the first support member The 102 series includes an opening 155 extending between the first and second surfaces 101, 103 thereof. In one example, the opening can be utilized as a stack, and an encapsulating material can be supplied through the crucible into an interior space between the first and second support members when the assembly 1110 is fabricated.
圖20係描繪根據以上相關圖9及17所敘述的實施例的一變 化之一組件1210，其中囊封體1252係包含一覆蓋該微電子元件120的額外的部分。在所展示的例子中，囊封材料1252係被形成為一部分地囊封第二連接器162並且延伸到該微電子元件的一主要的表面129以及邊緣表面127之上的單石區域。當該微電子元件是面朝上的被安裝在第二支撐元件104上時，主要的表面129可以是一如上相關圖1A所述的正面。或者是，當該微電子元件是面朝向該第二支撐元件104時，主要的表面128可以是該微電子元件120的一和該正面相對的背面。在此例子中，囊封體1250可接觸該囊封體1252來加以形成，並且可以覆蓋或是接觸第一支撐元件102的第二表面103。 Figure 20 depicts a variation of the embodiment described in relation to Figures 9 and 17 above. One of the components 1210, wherein the encapsulant 1252 includes an additional portion that covers the microelectronic component 120. In the illustrated example, encapsulation material 1252 is formed to partially encase second connector 162 and extend to a major surface 129 of the microelectronic component and a monolithic region above edge surface 127. When the microelectronic component is mounted face up on the second support member 104, the primary surface 129 can be a front surface as described above in relation to Figure 1A. Alternatively, when the microelectronic component is facing away from the second support component 104, the major surface 128 can be the back side of the microelectronic component 120 opposite the front side. In this example, the encapsulant 1250 can be formed in contact with the encapsulant 1252 and can cover or contact the second surface 103 of the first support member 102.
圖21-22係描繪根據以上相關圖11-13所述的方法的一變化 之製程。如同在圖21中所示，次組件321本身可以是一微電子封裝，其中一微電子元件130係以類似如上相關圖1A所述的在微電子元件20及支撐 元件104之間的耦接之方式具有電耦接至其之一支撐元件302的接點。在某些例子中，一囊封體352可覆蓋該微電子元件130的邊緣表面132，並且在某些情形中可以覆蓋該微電子元件的背對次組件321的支撐元件302之一主要的表面134。 21-22 depict a variation of the method according to the above related FIGS. 11-13 Process. As shown in FIG. 21, the subassembly 321 itself may be a microelectronic package in which a microelectronic component 130 is similar to the microelectronic component 20 and support as described above in relation to FIG. 1A. The coupling between the elements 104 has a contact that is electrically coupled to one of the support members 302. In some examples, an encapsulant 352 can cover the edge surface 132 of the microelectronic element 130 and, in some cases, can cover one of the major surfaces of the support element 302 of the back-to-subassembly 321 of the microelectronic element. 134.
參照圖22，接著次組件321的連接器161可以對準並且連結 該第二次組件22的對應的連接器162，並且一囊封體650可被形成在微電子元件120及次組件321之間的空間中，以形成一多層級的堆疊且電耦接的組件1310，該組件1310係包含該微電子元件120、130、其耦接至的支撐元件302、104，使得微電子元件120、130可以透過該支撐元件104、302以及該些第一及第二連接器161、162來彼此電耦接。例如是以上相關圖3所述的焊料球之連結元件146通常是在形成囊封體650之後可被施加至支撐元件104的端子142。 Referring to FIG. 22, the connector 161 of the secondary component 321 can be aligned and linked. A corresponding connector 162 of the second subassembly 22, and an encapsulant 650 can be formed in the space between the microelectronic component 120 and the subassembly 321 to form a multi-level stacked and electrically coupled component 1310, the component 1310 includes the microelectronic components 120, 130, and the support components 302, 104 coupled thereto, such that the microelectronic components 120, 130 can pass through the support components 104, 302 and the first and second connections The 161, 162 are electrically coupled to each other. For example, the solder ball connection element 146 described above in relation to FIG. 3 is typically a terminal 142 that can be applied to the support element 104 after forming the encapsulant 650.
圖23係描繪類似在圖14中所示者的一變化，其中組裝該第 一及第二次組件的製程是在第二連接器162已經附接至第一連接器的末端163下加以實行。 Figure 23 is a depiction of a variation similar to that shown in Figure 14, in which the first The process of the first and second sub-assemblies is carried out with the second connector 162 already attached to the end 163 of the first connector.
圖24係描繪在類似以上在圖15-17中所示者的一變化中， 該組裝製程可以在一其中囊封體952部分地覆蓋第二連接器162並且其中第一連接器161係和該些第二連接器162在該囊封體952的表面953露出的末端164連結之狀態中加以實行。圖25係描繪以此種方式形成的一產生的組件1410。 Figure 24 is a depiction of a variation similar to that shown in Figures 15-17 above, The assembly process can partially cover the second connector 162 in one of the encapsulants 952 and wherein the first connector 161 and the second connectors 162 are joined at the exposed end 164 of the surface 953 of the encapsulant 952. Implemented in the state. Figure 25 depicts a resulting assembly 1410 formed in this manner.
圖26-27係描繪另一種變化，其中在個別的次組件中之第一 連接器161以及第二連接器162都可以如上相關在圖11-13及15-17中所示 的方法所論述地被部分囊封。然而，在此例中，可以是具有例如上述的導電塊的形式之第三連接器169可以如圖所示地附接及電耦接該些第一連接器的末端163。如同進一步在圖27中所示，該些第三連接器169可以對準且連結該些第二連接器162，並且該所產生的組件1510接著可以被囊封在一第三囊封體1550中，該第三囊封體1550係填充在個別的第三連接器169之間的空間而且填充在微電子元件120及支撐元件302之間的空間。如上所述，該組件1510亦可被形成有附接至支撐元件104的連結元件146，以用於進一步和一外部的構件之對應的接點連接。 Figure 26-27 depicts another variation in which the first of the individual sub-assemblies Both the connector 161 and the second connector 162 can be as described above in Figures 11-13 and 15-17. The method is partially encapsulated as discussed. However, in this example, a third connector 169, which may be in the form of a conductive block such as described above, may be attached and electrically coupled to the ends 163 of the first connectors as shown. As further shown in FIG. 27, the third connectors 169 can align and join the second connectors 162, and the resulting assembly 1510 can then be encapsulated in a third encapsulant 1550. The third encapsulant 1550 fills the space between the individual third connectors 169 and fills the space between the microelectronic component 120 and the support component 302. As noted above, the assembly 1510 can also be formed with a coupling element 146 that is attached to the support member 104 for further connection to a corresponding joint of an external member.
圖28-30係描繪根據上述的方法的另一變化之製程。在此例 子中，在第一連接器上、或是在第二連接器上、或是在兩者上之部分的囊封體可被省略。反而，如同在圖28中所示，一介電加固環156可以存在於個別的第一連接器161、第二連接器162或是兩者周圍。如同圖28中可見的，該些加固環156係包含覆蓋個別的連接器的外表面，例如是導電塊之大致球狀的表面、或是相鄰的柱或其它連接器的壁之部分157，並且該些加固環在相鄰的加固環交界處可以形成溝槽159。該些加固環可藉由流動一種材料到該支撐元件102的一表面103之上，其接著可流動至在第一連接器161被附接所在的表面103上之位置來加以形成。例如，一種介電加固材料可以用一種液體來加以分配，該液體係流動到圍繞該些第一連接器之個別的第一連接器的區域。在某些例子中，一種真空施加、輥塗、噴塗、分配或是網版製程可以利用一液體材料而被使用在形成該些加固環中之一部分或是全部中。該介電加固材料可以毛細作用向上(wick up)到該些連接器周圍，以便於支撐該些連接器的外部表面，同時讓其末端163露出，並且避 免或是實質避免藉此加固的連接器在此種連接器和其它連接器連結以形成在此所述的組件或封裝時倒塌。在某些情形中，一溢料去除程序可被採用以移除覆蓋末端163的相當小量的加固材料。如同進一步在圖28中可見的，此種加固材料156也可以存在於第二連接器162之處及周圍。或者是，如同在第二連接器162b的情形中可見的，該加固層可被省略。在一例子中，該加固材料可以是一種例如是具有一載有微粒的介電材料的底膠填充材料之環氧樹脂材料、或是包含該環氧樹脂材料，其例如是通常被分配到在一例如是半導體晶片的微電子元件的一具有接點的面以及該晶片被覆晶附接並且電性互連到的一基板的一表面之間的一介面。在某些情形中，該些加固環可以降低被施加到其上的次組件的CTE。 28-30 depict a process of another variation in accordance with the above method. In this case In the sub-part, the encapsulant on the first connector, or on the second connector, or both, may be omitted. Instead, as shown in FIG. 28, a dielectric reinforcing ring 156 may be present around the individual first connector 161, second connector 162, or both. As can be seen in Figure 28, the reinforcing rings 156 comprise outer surfaces covering individual connectors, such as substantially spherical surfaces of the conductive blocks, or portions 157 of walls of adjacent posts or other connectors, And the reinforcing rings may form a groove 159 at the junction of adjacent reinforcing rings. The reinforcing rings may be formed by flowing a material onto a surface 103 of the support member 102, which may then flow to a location on the surface 103 where the first connector 161 is attached. For example, a dielectric reinforcement material can be dispensed with a liquid that flows to the area surrounding the individual first connectors of the first connectors. In some instances, a vacuum application, roll coating, spray coating, dispensing, or screen printing process can be utilized to form part or all of the reinforcing rings using a liquid material. The dielectric reinforcing material can be wicked up around the connectors to support the outer surface of the connectors while leaving the ends 163 exposed and avoiding The connector that is reinforced by this is not or substantially prevented from collapsing when such connectors and other connectors are joined to form the components or packages described herein. In some cases, a flash removal procedure can be employed to remove a relatively small amount of reinforcing material covering the ends 163. As can be seen further in FIG. 28, such reinforcing material 156 can also be present at and around the second connector 162. Alternatively, the reinforcing layer may be omitted as can be seen in the case of the second connector 162b. In one example, the reinforcing material may be an epoxy material such as a primer filling material having a dielectric material loaded with particles, or an epoxy resin material, which is typically assigned to One is, for example, a contacted face of a microelectronic component of a semiconductor wafer and an interface between a surface of a substrate to which the wafer is flip-chip bonded and electrically interconnected. In some cases, the reinforcing rings can reduce the CTE of the secondary component applied thereto.
如同進一步在圖29中所示，具有其中的末端被露出的第一及第二連接器的次組件可以用一種類似於上述的方式被連結在一起。 As further shown in Fig. 29, the secondary components having the first and second connectors in which the ends are exposed may be joined together in a manner similar to that described above.
之後，如同圖30中可見的，該些被連結的次組件可以利用一囊封體150填充在該些次組件之間的空間中並且進一步加固在第一及第二連接器之間的接合點而被機械式加固。如同圖30中可見的，該些被連結的第一及第二連接器161、162可以用一種類似於針對先前的實施例所描述的方式來在該第一及第二支撐元件之間提供增大的高度以及增大的寬高比之連接。 Thereafter, as can be seen in FIG. 30, the joined sub-assemblies can be filled with a capsule 150 in the space between the sub-assemblies and further reinforce the joint between the first and second connectors. It is mechanically reinforced. As can be seen in Figure 30, the joined first and second connectors 161, 162 can provide an increase between the first and second support members in a manner similar to that described for the prior embodiments. Large height and increased aspect ratio connections.
在圖28-30中所示的實施例的一變化中，加強(stiffening)層可以只覆蓋該些第二連接器的壁、或是可以只覆蓋該些第二連接器中的某些個的壁。該些第一連接器、第二連接器、或是該些第一及第二連接器兩者可以是導電塊、或者可以是在先前展示及論述的連接器類型中的任一種。 In a variation of the embodiment shown in Figures 28-30, the stiffening layer may cover only the walls of the second connectors, or may only cover some of the second connectors. wall. The first connector, the second connector, or both of the first and second connectors may be conductive blocks or may be any of the types of connectors previously shown and discussed.
在進一步變化中，一例如是在以上圖21中展示及敘述的封 裝321之微電子封裝可以被圖28中包含支撐元件102的次組件所取代，並且此種次組件可以和另一微電子封裝連結以形成一類似於在圖29中所描繪的組件。 In a further variation, for example, the seal shown and described in Figure 21 above The microelectronic package of 321 can be replaced by a subassembly comprising support member 102 in Fig. 28, and such a subassembly can be coupled to another microelectronic package to form a component similar to that depicted in Fig. 29.
在其它變化(未顯示)中，在圖11-14、15-18或21-30中所描 繪的組裝製程中的任一種都可以在具有如同其中所敘述的微電子元件或支撐元件之次組件中的一或兩者是被不同的結構所替換的一狀態中加以實行。明確地說，該些次組件中的一或兩者可以是、或者可包含一具有微電子元件以及在此種次組件的每個層級耦接至個別的微電子元件的支撐元件之多層級的堆疊且電性互連的組件。 Among other variations (not shown), depicted in Figures 11-14, 15-18 or 21-30 Any of the depicted assembly processes can be practiced in a state having one or both of the sub-components of the microelectronic element or support element as described herein replaced by a different structure. In particular, one or both of the sub-components may be, or may comprise, a multi-layer having a microelectronic component and a support component coupled to the individual microelectronic component at each level of such subassembly. Stacked and electrically interconnected components.
以上論述的結構係提供非凡的三維互連功能。這些功能可被 利用於任何類型的晶片。僅舉例而言，以下晶片的組合可以內含在如上所論述的結構中：(i)一處理器以及使用於該處理器的記憶體；(ii)複數個相同類型的記憶體晶片；(iii)複數個各式各樣類型的記憶體晶片，例如DRAM及SRAM；(iv)一影像感測器以及一被用來處理來自該感測器的影像之影像處理器；(v)一特殊應用的積體電路("ASIC")及記憶體。以上論述的結構可被利用在各式各樣的電子系統的建構中。例如，根據本發明的另一實施例的一種系統500係包含一如上所述的結構506結合其它的電子構件508及510。 在該描繪的例子中，構件508是一半導體晶片，而構件510是一顯示器螢幕，但是任何其它的構件都可被利用。當然，為了清楚描繪起見，儘管在圖31中只有兩個額外的構件被描繪，但是該系統可以包含任意數目的此種構件。例如，如上所述的結構506可以是一如上所論述的微電子封裝、或者 可以是一微電子組件，例如以上相關圖3或圖8所論述者。結構506以及構件508及510係被安裝在一概要以虛線描繪的共同的殼體501中，並且根據需要的彼此電性互連以形成所要的電路。在展示的範例系統中，該系統係包含一例如是撓性的印刷電路板之電路面板502，並且該電路面板係包含許多的導體504(其中只有一個被描繪在圖21中)，該些導體504係將該些構件彼此相互連接。然而，此僅僅是範例的；任何用於達成電連接之適當的結構都可被利用。該殼體501係被描繪為一例如可用在一行動電話或個人數位助理中的類型之可攜式殼體，並且螢幕510係在該殼體的表面露出。在結構506係包含一例如是成像晶片的光敏元件的情形中，一透鏡511或是其它光學元件亦可被設置用於將光指定路由至該結構。同樣地，在圖21中所示之簡化的系統僅僅是範例的；其它系統，包含通常被視為固定的結構之系統，例如桌上型電腦、路由器與類似者，都可以利用以上論述的結構來加以做成。 The structure discussed above provides an extraordinary three-dimensional interconnect function. These features can be Used in any type of wafer. By way of example only, a combination of the following wafers may be included in the structure as discussed above: (i) a processor and memory for the processor; (ii) a plurality of memory chips of the same type; a plurality of various types of memory chips, such as DRAM and SRAM; (iv) an image sensor and an image processor used to process images from the sensor; (v) a special application Integrated circuit ("ASIC") and memory. The structures discussed above can be utilized in the construction of a wide variety of electronic systems. For example, a system 500 in accordance with another embodiment of the present invention includes a structure 506 as described above in combination with other electronic components 508 and 510. In the depicted example, member 508 is a semiconductor wafer and member 510 is a display screen, but any other components can be utilized. Of course, for clarity of illustration, although only two additional components are depicted in Figure 31, the system can include any number of such components. For example, structure 506 as described above can be a microelectronic package as discussed above, or It can be a microelectronic component, such as those discussed above in relation to FIG. 3 or FIG. Structure 506 and members 508 and 510 are mounted in a common housing 501, generally depicted in dashed lines, and electrically interconnected to each other as needed to form the desired circuitry. In the exemplary system shown, the system includes a circuit panel 502, such as a flexible printed circuit board, and the circuit panel includes a plurality of conductors 504 (only one of which is depicted in Figure 21), the conductors 504 is to connect the members to each other. However, this is merely an example; any suitable structure for achieving an electrical connection can be utilized. The housing 501 is depicted as a portable housing of the type that can be used, for example, in a mobile phone or personal digital assistant, and the screen 510 is exposed at the surface of the housing. In the case where the structure 506 comprises a photosensitive element such as an imaging wafer, a lens 511 or other optical element may also be provided for routing light to the structure. Similarly, the simplified system shown in Figure 21 is merely exemplary; other systems, including systems that are generally considered to be fixed structures, such as desktops, routers, and the like, may utilize the structure discussed above. Come and make it.
由於以上論述的特點的這些及其它變化與組合都可在不脫離本發明下被利用，因此該些較佳實施例之先前的說明應該被視為舉例，而不是限制藉由該申請專利範圍所界定的本發明。 These and other variations and combinations of the above-discussed features may be utilized without departing from the invention, and the foregoing description of the preferred embodiments should be considered as illustrative and not The invention is defined.
10‧‧‧微電子組件 10‧‧‧Microelectronic components
101‧‧‧第一表面 101‧‧‧ first surface
102‧‧‧第一支撐元件 102‧‧‧First support element
103‧‧‧第二表面 103‧‧‧ second surface
104‧‧‧第二支撐元件 104‧‧‧Second support element
105‧‧‧第一表面 105‧‧‧ first surface
106‧‧‧第二表面 106‧‧‧second surface
115‧‧‧底膠填充 115‧‧‧Bottom glue filling
120‧‧‧微電子元件 120‧‧‧Microelectronic components
121‧‧‧凸塊 121‧‧‧Bumps
122‧‧‧正面 122‧‧‧ positive
124‧‧‧接點 124‧‧‧Contacts
125‧‧‧面 125‧‧‧ face
126‧‧‧接點 126‧‧‧Contacts
127‧‧‧邊緣/邊緣表面 127‧‧‧Edge/Edge Surface
129‧‧‧表面/後表面 129‧‧‧Surface/back surface
141‧‧‧第一封裝端子 141‧‧‧First package terminal
142‧‧‧第二封裝端子 142‧‧‧Second package terminal
142'‧‧‧端子 142'‧‧‧ terminals
150‧‧‧囊封體 150‧‧‧Encapsulation
161‧‧‧第一連接器/焊料球/導電塊 161‧‧‧First connector / solder ball / conductive block
162‧‧‧第二連接器/導電塊 162‧‧‧Second connector/conductive block
163‧‧‧末端 End of 163‧‧‧
164‧‧‧末端 End of 164‧‧
171‧‧‧核心/連接器 171‧‧‧core/connector
172‧‧‧核心/連接器 172‧‧‧core/connector
178‧‧‧第一橫向的方向 178‧‧‧ first horizontal direction
179‧‧‧第二橫向的方向 179‧‧‧ second horizontal direction
180‧‧‧垂直的方向 180‧‧‧Vertical direction
a‧‧‧間距 A‧‧‧ spacing
H‧‧‧間隔高度 H‧‧‧ interval height
Claims (14)
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| US13/942,602 US9034696B2 (en) | 2013-07-15 | 2013-07-15 | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
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| TWI550736B true TWI550736B (en) | 2016-09-21 |
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| KR (1) | KR20160031523A (en) |
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| KR101712288B1 (en) * | 2015-11-12 | 2017-03-03 | 앰코 테크놀로지 코리아 주식회사 | Package of semiconductor and method for manufacturing the same |
| US20210134690A1 (en) * | 2019-11-01 | 2021-05-06 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages and methods of manufacturing the same |
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| DE102005051414B3 (en) * | 2005-10-25 | 2007-04-12 | Infineon Technologies Ag | Semiconductor component with wiring substrate and solder balls and production processes has central plastic mass and lower film template for lower solder ball arrangement |
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| JP2006114604A (en) * | 2004-10-13 | 2006-04-27 | Toshiba Corp | Semiconductor device and assembly method thereof |
| JP4182144B2 (en) * | 2005-12-14 | 2008-11-19 | 新光電気工業株式会社 | Manufacturing method of chip embedded substrate |
| JP4652428B2 (en) * | 2008-04-23 | 2011-03-16 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
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| US8198131B2 (en) * | 2009-11-18 | 2012-06-12 | Advanced Semiconductor Engineering, Inc. | Stackable semiconductor device packages |
| US8304296B2 (en) * | 2010-06-23 | 2012-11-06 | Stats Chippac Ltd. | Semiconductor packaging system with multipart conductive pillars and method of manufacture thereof |
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