TWI540674B - Electrostatic chuck, chamber and electrostatic chuck production method - Google Patents
Electrostatic chuck, chamber and electrostatic chuck production method Download PDFInfo
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- TWI540674B TWI540674B TW103145700A TW103145700A TWI540674B TW I540674 B TWI540674 B TW I540674B TW 103145700 A TW103145700 A TW 103145700A TW 103145700 A TW103145700 A TW 103145700A TW I540674 B TWI540674 B TW I540674B
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- insulating layer
- heat insulating
- electrostatic chuck
- heat
- layer sheet
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
Description
本發明涉及半導體裝置製造領域,尤其涉及一種靜電卡盤、腔室和靜電卡盤的製作方法。The present invention relates to the field of semiconductor device manufacturing, and in particular, to a method for fabricating an electrostatic chuck, a chamber, and an electrostatic chuck.
卡盤在半導體生產過程中常用於承載並固定晶片,以避免晶片在製程過程中出現移動或者錯位現象。由於靜電卡盤具有減少了對晶片的機械接觸、增大了晶片可被有效加工的面積等優勢,因而在製程腔室中經常採用靜電卡盤來承載並固定晶片。 現有的卡盤結構如第1圖所示,卡盤座5上從下至上依次設置有隔熱粘合層4、加熱器3、金屬層2和絕緣層1,其中絕緣層1中設置有兩個電極6,且該兩個電極6能夠連接外部直流電源的正負極,從而能夠產生靜電引力以固定放置在絕緣層1上的晶片。加熱器3中設置有電阻絲,能夠在通電後產生熱量對晶片進行加熱,為了提高加熱效率,在加熱器3和卡盤座5之間設置了隔熱粘合層4,以阻止熱量向卡盤座5傳遞。 通常,隔熱粘合層4採用的是具有較好隔熱性能的矽樹脂粘合劑。形成隔熱粘合層4的方式為,將矽樹脂粘合劑塗覆在加熱器3和/或卡盤座5上,從而在加熱器3和卡盤座5之間形成了隔熱粘合層4,以將加熱器3和卡盤座5粘接在一起並使二者之間隔熱。為了具有較好的隔熱效果,所塗覆的矽樹脂粘合劑需要有較大的厚度。然而,人工塗覆矽樹脂粘合劑時,難以保證塗覆的平整度,這樣就可能在後續的晶片加工過程中,使靜電卡盤所固定的晶片存在一定角度的傾斜,影響加熱時的溫度均勻性,同時還會導致晶片加工的製程品質。此外,採用人工塗覆的方式也難以保證隔熱粘合層4的密封性,容易造成真空洩漏,導致整個靜電卡盤製造失敗。Chucks are often used to carry and hold wafers during semiconductor manufacturing to avoid movement or misalignment of the wafer during processing. Since electrostatic chucks have the advantage of reducing mechanical contact to the wafer, increasing the area at which the wafer can be efficiently processed, electrostatic chucks are often employed in the process chamber to carry and secure the wafer. The existing chuck structure is as shown in FIG. 1 , and the chuck seat 5 is provided with a heat insulating adhesive layer 4 , a heater 3 , a metal layer 2 and an insulating layer 1 in order from the bottom to the top, wherein two of the insulating layers 1 are disposed. The electrodes 6 are connectable to the positive and negative electrodes of the external DC power source, so that electrostatic attraction can be generated to fix the wafer placed on the insulating layer 1. The heater 3 is provided with a resistance wire capable of generating heat to heat the wafer after energization, and in order to improve the heating efficiency, an insulating adhesive layer 4 is disposed between the heater 3 and the chuck holder 5 to prevent heat from being applied to the card. The tray 5 is delivered. Generally, the heat insulating adhesive layer 4 is a silicone resin adhesive having good heat insulating properties. The heat insulating adhesive layer 4 is formed by coating a silicone resin adhesive on the heater 3 and/or the chuck holder 5, thereby forming an insulating bond between the heater 3 and the chuck holder 5. Layer 4 is used to bond the heater 3 and the chuck base 5 together and to insulate therebetween. In order to have a good heat insulating effect, the coated silicone resin binder needs to have a large thickness. However, when the resin adhesive is artificially coated, it is difficult to ensure the flatness of the coating, so that in the subsequent wafer processing, the wafer fixed by the electrostatic chuck may be inclined at an angle, which affects the temperature during heating. Uniformity also results in process quality for wafer processing. In addition, it is difficult to ensure the sealing property of the heat insulating adhesive layer 4 by manual coating, which is liable to cause vacuum leakage, resulting in failure of the entire electrostatic chuck manufacturing.
有鑒於此,本發明的目的在於提供一種靜電卡盤以及腔室,以使靜電卡盤中的隔熱層片材具有較好的平整度。 為實現上述目的,本發明提供一種靜電卡盤,該靜電卡盤包括卡盤座,該卡盤座上方設置有加熱器和絕緣層,該絕緣層設置在該加熱器上方,且該絕緣層內設置有用於產生靜電引力的電極,並且該靜電卡盤還包括隔熱層片材,該隔熱層片材疊置在該卡盤座和該加熱器之間而構成隔熱層。 其中,該隔熱層片材包括多層隔熱膜。 其中,該隔熱膜的材料為聚醯亞胺,該多層隔熱膜經真空熱壓後形成該隔熱層片材。 其中,該隔熱膜的厚度為0.04mm~0.06mm,該隔熱層片材的厚度為0.3mm~0.6mm。 其中,該隔熱層片材上表面與該加熱器粘合,該隔熱層片材下表面與該卡盤座粘合。 其中,該絕緣層材質為氧化鋁陶瓷或氮化鋁陶瓷。 其中,該絕緣層內還設置有導氣通道,該導氣通道用於導入調溫氣體,以使該絕緣層溫度均勻。 其中,該靜電卡盤還包括金屬層,該金屬層疊置在該絕緣層與該加熱器之間。 其中,該卡盤座內設置有冷卻溝道,該冷卻溝道用於通入冷卻液體以冷卻該靜電卡盤。 作為本發明的另一個方面,本發明還提供一種腔室,該腔室包括基座,並且該腔室還包括本發明上述任意方案提供的靜電卡盤,該靜電卡盤設置在該基座上。 作為本發明的又一個方面,本發明還提供一種靜電卡盤的製作方法,用於製作本發明提供的靜電卡盤。該方法至少包括隔熱層片材製作步驟和隔熱層片材安裝步驟,其中,在該隔熱層片材製作步驟中,製備獲得隔熱層片材;在該隔熱層片材安裝步驟中,使隔熱層片材疊置在該卡盤座和該加熱器之間而形成隔熱層。 其中,在該隔熱層片材製作步驟中,先獲得多層隔熱膜,而後將多層隔熱膜整體加工形成隔熱層片材。 其中,在該隔熱層片材製作步驟中,先製備多層材料為聚醯亞胺的隔熱膜,而後利用真空熱壓製程而將多層隔熱膜整體製成隔熱層片材。 其中,在該隔熱層片材製作步驟中,先製備出多個厚度為0.04mm~0.06mm隔熱膜,而後利用真空熱壓製程而將多層隔熱膜整體製成厚度為0.3mm~0.6mm隔熱層片材。 其中,在該隔熱層片材安裝步驟中,將該隔熱層片材的上表面與該加熱器粘合,將該隔熱層片材下表面與該卡盤座粘合而形成隔熱層。 本發明的有益效果如下: 在本發明提供的靜電卡盤中,通過在卡盤座和加熱器之間設置預製的隔熱層片材而形成隔熱層,有效克服了現有技術中的隔熱粘合層的平整度難以保證且容易出現真空洩露的問題,不僅提高了靜電卡盤的良率,而且還提高了應用該靜電卡盤進行半導體加工時的製程品質。此外,本發明提供的靜電卡盤還能夠避免現有技術中人工塗膠形成隔熱層的製程過程中的反復塗覆、反復找平等問題,降低了靜電卡盤的加工複雜度。 在本發明提供的腔室中包含有本發明提供的靜電卡盤,因此該腔室有效克服了現有腔室因其所配置的靜電卡盤存在隔熱粘合層的平整度較低且容易出現真空洩露等問題而導致的進行半導體加工時製程品質低等問題。 本發明提供的靜電卡盤製作方法,通過先製備隔熱層片材,而後使製備好的隔熱層片材疊置在卡盤座和加熱器之間而形成隔熱層。這樣,由於隔熱層片材是預先獨立製備的,因此能夠有效克服現有技術中的隔熱粘合層的平整度低且容易出現真空洩露等問題,這不僅提高了靜電卡盤的良率,而且還提高了應用該靜電卡盤進行半導體加工時的製程品質。此外,本發明提供的靜電卡盤製作方法還能夠避免現有技術中人工塗膠形成隔熱層的製程過程中的反復塗覆、反復找平等問題,降低了靜電卡盤製作的複雜度,提高了製作效率。In view of the above, it is an object of the present invention to provide an electrostatic chuck and a chamber such that the insulating layer sheet in the electrostatic chuck has a good flatness. To achieve the above object, the present invention provides an electrostatic chuck including a chuck holder having a heater and an insulating layer disposed thereon, the insulating layer being disposed above the heater and within the insulating layer An electrode for generating electrostatic attraction is provided, and the electrostatic chuck further includes a heat insulating layer sheet which is stacked between the chuck seat and the heater to constitute a heat insulating layer. Wherein, the insulation layer sheet comprises a plurality of layers of heat insulation film. Wherein, the material of the heat insulation film is polyimine, and the multilayer heat insulation film is formed by vacuum heat pressing to form the heat insulation layer sheet. The thickness of the heat insulating film is 0.04 mm to 0.06 mm, and the thickness of the heat insulating layer sheet is 0.3 mm to 0.6 mm. Wherein, the upper surface of the heat insulation layer sheet is bonded to the heater, and the lower surface of the heat insulation layer sheet is bonded to the chuck seat. The insulating layer is made of alumina ceramic or aluminum nitride ceramic. The air guiding channel is further disposed in the insulating layer, and the air guiding channel is used to introduce a temperature regulating gas to make the temperature of the insulating layer uniform. Wherein, the electrostatic chuck further comprises a metal layer disposed between the insulating layer and the heater. Wherein, the chuck seat is provided with a cooling channel for introducing a cooling liquid to cool the electrostatic chuck. As another aspect of the present invention, the present invention provides a chamber including a susceptor, and the chamber further includes an electrostatic chuck provided by any of the above aspects of the present invention, the electrostatic chuck being disposed on the pedestal . As still another aspect of the present invention, the present invention also provides a method of fabricating an electrostatic chuck for fabricating the electrostatic chuck provided by the present invention. The method includes at least a heat insulating layer sheet forming step and a heat insulating layer sheet mounting step, wherein in the heat insulating layer sheet forming step, a heat insulating layer sheet is prepared; and the heat insulating layer sheet mounting step is performed The heat insulating layer sheet is stacked between the chuck seat and the heater to form a heat insulating layer. In the heat insulating layer sheet forming step, a multilayer heat insulating film is first obtained, and then the multilayer heat insulating film is entirely processed to form a heat insulating layer sheet. In the step of fabricating the heat-insulating layer sheet, a heat-insulating film having a multilayer material of polyimine is first prepared, and then the multilayer heat-insulating film is entirely formed into a heat-insulating layer sheet by a vacuum heat-pressing process. Wherein, in the heat insulating layer sheet forming step, a plurality of heat insulating films having a thickness of 0.04 mm to 0.06 mm are prepared, and then the multilayer heat insulating film is integrally formed into a thickness of 0.3 mm to 0.6 by a vacuum hot pressing process. Mm insulation sheet. Wherein, in the heat insulating layer sheet mounting step, the upper surface of the heat insulating layer sheet is bonded to the heater, and the lower surface of the heat insulating layer sheet is bonded to the chuck seat to form heat insulation. Floor. The beneficial effects of the present invention are as follows: In the electrostatic chuck provided by the present invention, the heat insulating layer is formed by providing a prefabricated heat insulating layer sheet between the chuck holder and the heater, thereby effectively overcoming the heat insulation in the prior art. The flatness of the adhesive layer is difficult to ensure and the problem of vacuum leakage is prone to occur, which not only improves the yield of the electrostatic chuck, but also improves the process quality when the electrostatic chuck is used for semiconductor processing. In addition, the electrostatic chuck provided by the invention can avoid the repeated coating and repeated equalization in the process of manually coating the thermal insulation layer in the prior art, and reduces the processing complexity of the electrostatic chuck. The electrostatic chuck provided by the invention is included in the chamber provided by the invention, so that the chamber effectively overcomes the low flatness and easy occurrence of the thermal insulation layer of the existing chamber due to the electrostatic chuck disposed therein. Problems such as low process quality during semiconductor processing due to problems such as vacuum leakage. The electrostatic chuck manufacturing method provided by the present invention forms a heat insulating layer by first preparing a heat insulating layer sheet and then stacking the prepared heat insulating layer sheet between the chuck seat and the heater. In this way, since the heat insulating layer sheet is separately prepared in advance, it can effectively overcome the problems of low flatness of the heat insulating adhesive layer in the prior art and easy occurrence of vacuum leakage, which not only improves the yield of the electrostatic chuck, Moreover, the process quality when the electrostatic chuck is applied for semiconductor processing is also improved. In addition, the method for manufacturing the electrostatic chuck provided by the invention can avoid the problem of repeated coating and repeated equalization in the process of forming the heat insulating layer by manual glue in the prior art, thereby reducing the complexity of the electrostatic chuck manufacturing and improving the complexity. Production efficiency.
以下結合附圖對本發明的具體實施方式進行詳細說明。應當理解的是,此處所描述的具體實施方式僅用於說明和解釋本發明,並不用於限制本發明。 作為本發明的一個方面,提供一種靜電卡盤,如第2圖至第4圖所示,該靜電卡盤由下至上可以設置有卡盤座10、隔熱層40、加熱器20和絕緣層30。 其中,絕緣層30內還設置有用於產生靜電引力的電極31。兩個電極31能夠外接直流電源的正負極,從而在絕緣層30上產生靜電引力以固定晶片。通常,電極31的引線從絕緣層30的內部穿過靜電卡盤並從卡盤座10的底面穿出以連接外部直流電源。 隔熱層40是由預製的隔熱層片材加工而來的。該隔熱層片材的材料可以採用高溫絕熱材料,例如聚醯亞胺(polyimide)。製作靜電卡盤時,將隔熱層片材製作成與卡盤座10和加熱器20形狀相適配的形狀,並將其放置在卡盤座10和加熱器20之間而形成隔熱層,以便該靜電卡盤應用在半導體處理製程時,該隔熱層40能夠阻止加熱器20產生的熱量向卡盤座10傳遞。並且,為使由絕緣層30引出的電極31的引線能夠穿過隔熱層40而到達卡盤座10的底面,在隔熱層40上可以設置有相應的通孔,供電極31的引線走線。 本發明提供的靜電卡盤中採用了預製的隔熱層片材來實現卡盤座10與加熱器20的隔熱,由於該隔熱層片材可以預先加工製成,即,該隔熱層片材可以預先且獨立地製作,這樣就能夠較好地控制其平整度。因此,與現有技術相比,本發明提供的靜電卡盤克服了現有的在加熱器3和/或卡盤座5上利用人工塗覆來形成隔熱粘合層時導致的難以保證平整度以及容易造成真空洩露的問題,同時降低了靜電卡盤的加工難度。 更進一步地,如第3圖所示,隔熱層片材可以包括多層隔熱膜41。具體地,多層隔熱膜41可以逐層疊置而形成隔熱層片材,這樣,可以使得由該隔熱層片材形成的隔熱層40具有更好的隔熱效果。在實際應用中,當隔熱層片材採用上述結構時,可以根據實際需求靈活調整隔熱膜41的層數,以獲得期望的隔熱層片材的厚度以及隔熱性能。 更進一步地,因聚醯亞胺具有較好的隔熱性能以及優越的綜合性能,因此隔熱膜41的材料可以為聚醯亞胺,並且可以將多層聚醯亞胺膜逐層疊置並連接成為整體後形成隔熱層片材。具體地,可以將多層聚醯亞胺膜逐層粘合後形成隔熱層片材;或者,可以將多層聚醯亞胺膜通過真空熱壓後而形成隔熱層片材,例如,可以將多層聚醯亞胺膜利用真空熱壓機在真空中壓制連接成為一個整體而形成隔熱層片材。採用真空熱壓能夠使多層聚醯亞胺膜牢固連接,且加工較為便捷,因此該方式為本發明的一個較佳實施方式。 更進一步地,採用聚醯亞胺製成的隔熱膜41的厚度可以為0.04mm~0.06mm,隔熱層片材的厚度可以為0.3mm~0.6mm。較佳地,可以選用厚度在0.05mm的聚醯亞胺膜,多層聚醯亞胺膜形成的隔熱層片材的厚度可以在0.3mm~0.6mm之間以便於加工並獲得較佳的隔熱效果。可以理解的是,上述僅為本發明所提供的較佳實施方式,在實際應用中,可以根據需要調整隔熱層片材的厚度,例如,若加熱器20加熱的溫度較高或功率較大,則可以適當增加隔熱膜41的數量以增加隔熱層片材的厚度,從而提高隔熱效果;若加熱器20加熱的溫度略低或功率較小,則可以選用較少數量的隔熱膜41以減少加工複雜度。 更進一步地,隔熱層40的上表面可以與加熱器20粘合,隔熱層40的下表面可以與卡盤座10粘合。即,作為本發明的較佳實施方式,預製的隔熱層40可以通過粘合的方式分別與加熱器20和卡盤座10連接固定。 更進一步地,由於氧化鋁陶瓷和氮化鋁陶瓷均具有較好的絕緣性、耐高溫性以及較高的機械強度和導熱性能,因此,絕緣層30的材質可以為氧化鋁陶瓷或氮化鋁陶瓷。 更進一步地,如第4圖所示,絕緣層30的上表面設置有凸起32,兩兩相鄰的凸起32之間形成凹陷。並且,絕緣層30內還設置有導氣通道33,該導氣通道33與絕緣層30的上表面的凹陷連通,用於向該凹陷導入氣體。具體地,絕緣層30的上表面可以設置有多個凸起32,當晶片放置在絕緣層30上時,晶片的下表面將與凸起32接觸,絕緣層30的內部可以設置有導氣通道33,該導氣通道33可以從外部向絕緣層30上表面的凹陷通入諸如加熱氣體的調溫氣體,使得加熱氣體充滿凸起32間的凹陷處,採用上述結構,能夠利用來自絕緣層30的熱量以及來自加熱氣體的熱量來對晶片進行更為均勻的加熱。其中,導氣通道33的數量可以根據實際需要設置,較佳地,可以將導氣通道33設置在絕緣層30靠外側的部分內,並與絕緣層30上表面上的靠近邊緣處的凹陷連通。嚮導氣通道33內通入的加熱氣體可以為具有一定熱量的惰性氣體,如氦氣、氬氣等。 更進一步地,可以如第4圖所示,該靜電卡盤還可以包括金屬層50,該金屬層50疊置在絕緣層30和加熱器20之間。具體地,可以在加熱器20上設置金屬層50,並將絕緣層30設置在金屬層50上,採用上述方式,可以使得加熱器20先對金屬層50加熱,再由金屬層50將熱量傳遞至絕緣層30,金屬層50可以為平板的金屬,這樣能夠更加均勻地將熱量傳遞至絕緣層30。金屬層50可以由鋁製成,並且可以採用導熱性能較好的粘合劑將金屬層50分別與絕緣層30和加熱器20粘接固定。 更進一步地,卡盤座10內可以設置有冷卻溝道11,該冷卻溝道11可以用於通入冷卻液體以冷卻該靜電卡盤。具體地,在利用靜電卡盤對晶片進行控溫的過程中,可以向冷卻溝道11內通入冷卻液體,以使得靜電卡盤達到熱平衡狀態,此外,設置該冷卻溝道11,可以使靜電卡盤在需要降溫時能夠快速地實現溫度下降。 上述為對本發明所提供的靜電卡盤進行的描述,可以看出,本發明通過在卡盤座和加熱器之間設置預製的隔熱層片材而形成隔熱層,有效克服了現有技術中的隔熱粘合層的平整度難以保證且容易出現真空洩露的問題,不僅提高了靜電卡盤的良率,而且還提高了應用該靜電卡盤進行半導體加工時的製程品質。此外,本發明提供的靜電卡盤還能夠避免現有技術中人工塗膠形成隔熱層的製程過程中的反復塗覆、反復找平等問題,降低了靜電卡盤的加工複雜度。 作為本發明的另一方面,提供一種腔室,該腔室包括基座,且該腔室還包括上述本發明所提供的靜電卡盤,且該靜電卡盤設置在上述基座上。 由於本發明提供的腔室包含有本發明提供的靜電卡盤,因此有效克服了現有腔室因其所配置的靜電卡盤存在隔熱粘合層的平整度較低且容易出現真空洩露等問題而導致的進行半導體加工時製程品質低等問題。 作為本發明的又一個方面,本發明還提供一種靜電卡盤的製作方法,用於製作前述各個實施例提供的靜電卡盤。如第5圖所示,該方法至少包括隔熱層片材製作步驟110和隔熱層片材安裝步驟120:在隔熱層片材製作步驟110中,製備獲得隔熱層片材;在隔熱層片材安裝步驟120中,使隔熱層片材疊置在卡盤座和加熱器之間。 具體地,在隔熱層片材製作步驟110中,先製備出一個隔熱膜,而後將該一個隔熱膜折疊成多層而形成多層隔熱膜;或者先製備出多個隔熱膜,而後將該多個隔熱膜層疊形成多層隔熱膜;最後,將多層隔熱膜製作形成隔熱層片材。例如,可以利用真空熱壓製程而將多層隔熱膜製成隔熱層片材。在實際應用中,因聚醯亞胺具有較好的隔熱性能以及優越的綜合性能,因此隔熱膜的材料可以選用聚醯亞胺。並且,可以使單層隔熱膜的厚度為0.04mm~0.06mm,而後利用真空熱壓製程而將多層隔熱膜製成厚度為0.3mm~0.6mm隔熱層片材。 在隔熱層片材製作步驟120中,將隔熱層片材的上表面與加熱器粘合,將隔熱層片材下表面與卡盤座粘合,從而將隔熱層片材疊置在卡盤座和加熱器之間,以形成靜電卡盤。 此外,本發明提供的靜電卡盤的製作方法還包括導氣通道設置步驟,即,在絕緣層內設置導氣通道,用於導入諸如加熱氣體的調溫氣體,以使絕緣層溫度均勻。 進一步地,本發明提供的靜電卡盤的製作方法還包括金屬層設置步驟,即,將金屬層疊置在該絕緣層與該加熱器之間,以更加均勻地將熱量傳遞至絕緣層。 進一步地,本發明提供的靜電卡盤的製作方法還包括冷卻溝道設置步驟,即,在卡盤座內設置冷卻溝道用於通入冷卻液體以冷卻該靜電卡盤。 關於導氣通道、金屬層和冷卻溝道的更多說明可以參看前述結合第4圖所做的說明,在此不再贅述。 本發明提供的靜電卡盤製作方法,通過先製備隔熱層片材,而後使製備好的隔熱層片材疊置在卡盤座和加熱器之間而形成隔熱層。這樣,由於隔熱層片材是預先獨立製備的,因此能夠有效克服現有技術中的隔熱粘合層的平整度低且容易出現真空洩露等問題,這不僅提高了靜電卡盤的良率,而且還提高了應用該靜電卡盤進行半導體加工時的製程品質。此外,本發明提供的靜電卡盤製作方法還能夠避免現有技術中人工塗膠形成隔熱層的製程過程中的反復塗覆、反復找平等問題,降低了靜電卡盤製作的複雜度,提高了製作效率。 可以理解的是,以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式,然而本發明並不侷限於此。對於本領域內的普通技術人員而言,在不脫離本發明的精神和實質的情況下,可以做出各種變型和改進,這些變型和改進也視為本發明的保護範圍。The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative and not restrictive. As an aspect of the present invention, an electrostatic chuck is provided. As shown in FIGS. 2 to 4, the electrostatic chuck may be provided with a chuck holder 10, a heat insulating layer 40, a heater 20, and an insulating layer from bottom to top. 30. An electrode 31 for generating electrostatic attraction is further disposed in the insulating layer 30. The two electrodes 31 can externally connect the positive and negative electrodes of the direct current power source to generate electrostatic attraction on the insulating layer 30 to fix the wafer. Typically, the leads of the electrode 31 pass through the electrostatic chuck from the inside of the insulating layer 30 and pass out from the bottom surface of the chuck holder 10 to connect an external DC power source. The insulating layer 40 is machined from a prefabricated insulating layer sheet. The material of the heat insulation layer sheet may be a high temperature heat insulating material such as polyimide. When the electrostatic chuck is fabricated, the heat insulating layer sheet is formed into a shape that matches the shape of the chuck holder 10 and the heater 20, and is placed between the chuck holder 10 and the heater 20 to form a heat insulating layer. The heat insulating layer 40 can prevent heat generated by the heater 20 from being transferred to the chuck holder 10 when the electrostatic chuck is applied in a semiconductor processing process. Moreover, in order to allow the lead of the electrode 31 led out by the insulating layer 30 to pass through the heat insulating layer 40 to reach the bottom surface of the chuck holder 10, a corresponding through hole may be provided in the heat insulating layer 40 for the lead of the electrode 31 to be taken away. line. The electrostatic chuck provided by the present invention adopts a prefabricated heat insulation layer sheet to insulate the chuck seat 10 from the heater 20, since the heat insulation layer sheet can be pre-processed, that is, the heat insulation layer The sheet can be made in advance and independently so that its flatness can be better controlled. Therefore, compared with the prior art, the electrostatic chuck provided by the present invention overcomes the difficulty in ensuring the flatness caused by the conventional application of the thermal insulation adhesive layer on the heater 3 and/or the chuck base 5 It is easy to cause vacuum leakage and reduce the difficulty of processing the electrostatic chuck. Further, as shown in FIG. 3, the heat insulating layer sheet may include a plurality of heat insulating films 41. Specifically, the multilayer heat insulating film 41 can be laminated to form a heat insulating layer sheet, so that the heat insulating layer 40 formed of the heat insulating layer sheet can have a better heat insulating effect. In practical applications, when the heat insulating layer sheet adopts the above structure, the number of layers of the heat insulating film 41 can be flexibly adjusted according to actual needs to obtain a desired thickness of the heat insulating layer sheet and heat insulating properties. Further, since the polyimide has good heat insulating properties and superior comprehensive properties, the material of the heat insulating film 41 may be polyimine, and the multilayer polyimide film may be laminated and connected. After forming the whole, a heat insulating layer sheet is formed. Specifically, the multi-layered polyimide film may be layer-by-layer bonded to form a heat insulating layer sheet; or, the multilayer polyimide film may be formed by vacuum hot pressing to form a heat insulating layer sheet, for example, The multi-layered polyimide film is pressed into a whole by a vacuum hot press to form a heat insulating layer sheet. The vacuum thermocompression can firmly bond the multilayer polyimide film and process it conveniently, so this mode is a preferred embodiment of the present invention. Further, the thickness of the heat insulating film 41 made of polyimide may be 0.04 mm to 0.06 mm, and the thickness of the heat insulating layer sheet may be 0.3 mm to 0.6 mm. Preferably, a polyimide film having a thickness of 0.05 mm can be selected, and the thickness of the heat insulating layer formed by the multilayer polyimide film can be between 0.3 mm and 0.6 mm for processing and obtaining better separation. Thermal effect. It can be understood that the above is only the preferred embodiment provided by the present invention. In practical applications, the thickness of the insulating layer sheet can be adjusted as needed, for example, if the heater 20 is heated at a higher temperature or a higher power. , the number of the heat insulation film 41 can be appropriately increased to increase the thickness of the heat insulation layer sheet, thereby improving the heat insulation effect; if the heater 20 is heated at a slightly lower temperature or a lower power, a smaller amount of heat insulation can be selected. The film 41 is used to reduce processing complexity. Further, the upper surface of the heat insulating layer 40 may be bonded to the heater 20, and the lower surface of the heat insulating layer 40 may be bonded to the chuck holder 10. That is, as a preferred embodiment of the present invention, the prefabricated heat insulating layer 40 may be bonded and fixed to the heater 20 and the chuck base 10, respectively. Further, since both the alumina ceramic and the aluminum nitride ceramic have good insulation, high temperature resistance, and high mechanical strength and thermal conductivity, the material of the insulating layer 30 may be alumina ceramic or aluminum nitride. ceramics. Further, as shown in Fig. 4, the upper surface of the insulating layer 30 is provided with a projection 32, and a recess is formed between the adjacent projections 32. Further, an air guiding passage 33 is provided in the insulating layer 30, and the air guiding passage 33 communicates with a recess of the upper surface of the insulating layer 30 for introducing a gas into the recess. Specifically, the upper surface of the insulating layer 30 may be provided with a plurality of protrusions 32. When the wafer is placed on the insulating layer 30, the lower surface of the wafer will be in contact with the protrusion 32, and the inside of the insulating layer 30 may be provided with a gas guiding channel. 33. The air guiding passage 33 can open a tempering gas such as a heating gas from the outside to the recess of the upper surface of the insulating layer 30, so that the heating gas fills the recess between the protrusions 32, and the above structure can be utilized from the insulating layer 30. The heat and the heat from the heated gas provide a more uniform heating of the wafer. The number of the air guiding passages 33 may be set according to actual needs. Preferably, the air guiding passages 33 may be disposed in a portion outside the insulating layer 30 and communicate with the recesses near the edges on the upper surface of the insulating layer 30. . The heating gas introduced into the pilot gas passage 33 may be an inert gas having a certain heat such as helium gas, argon gas or the like. Still further, as shown in FIG. 4, the electrostatic chuck may further include a metal layer 50 stacked between the insulating layer 30 and the heater 20. Specifically, the metal layer 50 may be disposed on the heater 20, and the insulating layer 30 may be disposed on the metal layer 50. In the above manner, the heater 20 may be heated to the metal layer 50, and then transferred by the metal layer 50. To the insulating layer 30, the metal layer 50 may be a flat metal such that heat can be transferred to the insulating layer 30 more uniformly. The metal layer 50 may be made of aluminum, and the metal layer 50 may be bonded and fixed to the insulating layer 30 and the heater 20, respectively, using an adhesive having better thermal conductivity. Further, a chucking channel 11 may be disposed in the chuck base 10, and the cooling channel 11 may be used to pass a cooling liquid to cool the electrostatic chuck. Specifically, in the process of controlling the temperature of the wafer by using the electrostatic chuck, the cooling liquid can be introduced into the cooling channel 11 to bring the electrostatic chuck into a thermal equilibrium state, and further, the cooling channel 11 is disposed to make the static electricity The chuck can quickly achieve a temperature drop when it needs to cool down. The foregoing is a description of the electrostatic chuck provided by the present invention. It can be seen that the present invention effectively overcomes the prior art by providing a pre-made insulating layer sheet between the chuck holder and the heater to form a heat insulating layer. The flatness of the heat-insulating adhesive layer is difficult to ensure and the problem of vacuum leakage is prone to occur, which not only improves the yield of the electrostatic chuck, but also improves the process quality when the electrostatic chuck is used for semiconductor processing. In addition, the electrostatic chuck provided by the invention can avoid the repeated coating and repeated equalization in the process of manually coating the thermal insulation layer in the prior art, and reduces the processing complexity of the electrostatic chuck. As another aspect of the present invention, there is provided a chamber including a susceptor, and the chamber further includes the electrostatic chuck provided by the present invention described above, and the electrostatic chuck is disposed on the susceptor. Since the chamber provided by the present invention comprises the electrostatic chuck provided by the invention, the existing chamber is effectively overcome the problem that the flatness of the thermal insulating adhesive layer of the existing chamber is low and the vacuum leakage is easy to occur. This leads to problems such as low process quality during semiconductor processing. As still another aspect of the present invention, the present invention also provides a method of fabricating an electrostatic chuck for fabricating the electrostatic chuck provided by the foregoing various embodiments. As shown in FIG. 5, the method includes at least a heat insulation layer sheet forming step 110 and a heat insulation layer sheet mounting step 120: in the heat insulation layer sheet forming step 110, preparing a heat insulating layer sheet; In the hot layer sheet mounting step 120, the insulating layer sheet is stacked between the chuck holder and the heater. Specifically, in the heat insulation layer sheet forming step 110, a heat insulation film is first prepared, and then the one heat insulation film is folded into a plurality of layers to form a multilayer heat insulation film; or a plurality of heat insulation films are prepared first, and then The plurality of heat insulating films are laminated to form a multilayer heat insulating film; finally, the multilayer heat insulating film is formed to form a heat insulating layer sheet. For example, a multilayer heat insulating film can be formed into a heat insulating layer sheet by a vacuum hot pressing process. In practical applications, because the polyimide has good thermal insulation properties and superior comprehensive properties, the material of the thermal insulation film can be selected from polyimine. Further, the thickness of the single-layer heat insulating film may be 0.04 mm to 0.06 mm, and then the multilayer heat insulating film may be formed into a heat insulating layer sheet having a thickness of 0.3 mm to 0.6 mm by a vacuum heat pressing process. In the heat insulation layer sheet forming step 120, the upper surface of the heat insulation layer sheet is bonded to the heater, and the lower surface of the heat insulation layer sheet is bonded to the chuck seat, thereby stacking the heat insulation layer sheets. Between the chuck holder and the heater to form an electrostatic chuck. In addition, the method for fabricating an electrostatic chuck provided by the present invention further includes a gas guiding passage setting step of disposing a gas guiding passage in the insulating layer for introducing a temperature regulating gas such as a heating gas to make the temperature of the insulating layer uniform. Further, the method for fabricating an electrostatic chuck provided by the present invention further includes a metal layer setting step of placing a metal layer between the insulating layer and the heater to more uniformly transfer heat to the insulating layer. Further, the method for fabricating the electrostatic chuck provided by the present invention further includes a cooling channel setting step of providing a cooling channel in the chuck holder for introducing a cooling liquid to cool the electrostatic chuck. For further explanation of the air guiding passage, the metal layer, and the cooling channel, reference may be made to the foregoing description in conjunction with FIG. 4, and details are not described herein again. The electrostatic chuck manufacturing method provided by the present invention forms a heat insulating layer by first preparing a heat insulating layer sheet and then stacking the prepared heat insulating layer sheet between the chuck seat and the heater. In this way, since the heat insulating layer sheet is separately prepared in advance, it can effectively overcome the problems of low flatness of the heat insulating adhesive layer in the prior art and easy occurrence of vacuum leakage, which not only improves the yield of the electrostatic chuck, Moreover, the process quality when the electrostatic chuck is applied for semiconductor processing is also improved. In addition, the method for manufacturing the electrostatic chuck provided by the invention can avoid the problem of repeated coating and repeated equalization in the process of forming the heat insulating layer by manual glue in the prior art, thereby reducing the complexity of the electrostatic chuck manufacturing and improving the complexity. Production efficiency. It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.
1、30‧‧‧絕緣層
2、50‧‧‧金屬層
3、20‧‧‧加熱器
4‧‧‧隔熱粘合層
5、10‧‧‧卡盤座
6、31‧‧‧電極
11‧‧‧冷卻溝道
32‧‧‧凸起
33‧‧‧導氣通道
40‧‧‧隔熱層
41‧‧‧隔熱膜1, 30‧‧‧ insulation
2, 50‧‧‧ metal layer
3, 20‧‧‧ heater
4‧‧‧Insulation bonding layer
5, 10‧‧‧ chuck seat
6, 31‧‧‧ electrodes
11‧‧‧Cooling channel
32‧‧‧ bumps
33‧‧‧ air guiding channel
40‧‧‧Insulation
41‧‧‧Insulation film
附圖是用來提供對本發明的進一步理解,並且構成說明書的一部分,與下面的具體實施方式一起用於解釋本發明,但並不構成對本發明的限制。在附圖中: 第1圖為現有的靜電卡盤結構示例圖; 第2圖為本發明一個實施例提供的靜電卡盤結構示例圖; 第3圖為本發明一個實施例提供的隔熱層片材結構示例圖; 第4圖為本發明一個實施例提供的另一靜電卡盤結構示例圖;以及 第5圖為本發明一個實施例提供的靜電卡盤的製作方法的流程示意圖。The drawings are intended to provide a further understanding of the invention, and are intended to be a In the drawings: FIG. 1 is a view showing an example of a structure of an electrostatic chuck; FIG. 2 is a view showing an example of an electrostatic chuck according to an embodiment of the present invention; and FIG. 3 is a heat insulating layer according to an embodiment of the present invention. FIG. 4 is a schematic view showing another example of an electrostatic chuck structure according to an embodiment of the present invention; and FIG. 5 is a flow chart showing a method for fabricating an electrostatic chuck according to an embodiment of the present invention.
10‧‧‧卡盤座 10‧‧‧ chuck seat
20‧‧‧加熱器 20‧‧‧heater
30‧‧‧絕緣層 30‧‧‧Insulation
31‧‧‧電極 31‧‧‧ electrodes
40‧‧‧隔熱層 40‧‧‧Insulation
Claims (13)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310750732.8A CN104752301B (en) | 2013-12-31 | 2013-12-31 | A kind of electrostatic chuck and chamber |
Publications (2)
Publication Number | Publication Date |
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TW201526156A TW201526156A (en) | 2015-07-01 |
TWI540674B true TWI540674B (en) | 2016-07-01 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW103145700A TWI540674B (en) | 2013-12-31 | 2014-12-26 | Electrostatic chuck, chamber and electrostatic chuck production method |
Country Status (5)
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JP (1) | JP6524098B2 (en) |
KR (1) | KR20160088426A (en) |
CN (1) | CN104752301B (en) |
TW (1) | TWI540674B (en) |
WO (1) | WO2015101259A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11476147B2 (en) * | 2018-03-13 | 2022-10-18 | Ngk Insulators, Ltd. | Wafer holding table |
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KR101978367B1 (en) * | 2017-08-25 | 2019-05-14 | 이인철 | Apparatus providing gas to chamber for manufacturing semiconductor and chamber for manufacturing semiconductor including the same |
CN110491819B (en) * | 2018-05-14 | 2021-11-12 | 北京北方华创微电子装备有限公司 | Method for balancing electrostatic force and electrostatic chuck |
CN110890305B (en) * | 2018-09-10 | 2022-06-14 | 北京华卓精科科技股份有限公司 | Electrostatic chuck |
CN111081517B (en) * | 2018-10-19 | 2023-03-03 | 长鑫存储技术有限公司 | Anti-corrosion method of electrostatic chuck |
CN109825819B (en) * | 2019-01-28 | 2021-01-12 | 华灿光电(浙江)有限公司 | Graphite base |
WO2021262521A1 (en) * | 2020-06-26 | 2021-12-30 | Applied Materials, Inc. | Deformable substrate chuck |
KR102260505B1 (en) * | 2020-08-26 | 2021-06-03 | 고광노 | A Method for flattening the adhesive layer of an electrostatic chuck |
KR102418014B1 (en) * | 2021-08-27 | 2022-07-07 | 주식회사 동탄이엔지 | Electrostatic chuck including flim-type bonding layer having holes and electrostatic chuck manufacturing method |
Family Cites Families (12)
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FR2790731B1 (en) * | 1999-03-11 | 2001-06-08 | Cit Alcatel | METHOD OF SIMULATING EXTERNAL THERMAL FLOWS ABSORBED IN FLIGHT BY THE EXTERNAL RADIATIVE ELEMENTS OF A SPACE ENGINE AND SPACE ENGINE FOR THE IMPLEMENTATION OF THIS PROCESS |
JP4753460B2 (en) * | 2000-08-16 | 2011-08-24 | 株式会社クリエイティブ テクノロジー | Electrostatic chuck and manufacturing method thereof |
JP4666903B2 (en) * | 2003-11-26 | 2011-04-06 | 京セラ株式会社 | Wafer support member |
US8038796B2 (en) * | 2004-12-30 | 2011-10-18 | Lam Research Corporation | Apparatus for spatial and temporal control of temperature on a substrate |
JP5157131B2 (en) * | 2006-11-08 | 2013-03-06 | 住友電気工業株式会社 | Heating body and semiconductor manufacturing apparatus equipped with the same |
JP2008235735A (en) * | 2007-03-23 | 2008-10-02 | Sumitomo Precision Prod Co Ltd | Electrostatic chuck and plasma processing equipment having it |
JP2009054932A (en) * | 2007-08-29 | 2009-03-12 | Shinko Electric Ind Co Ltd | Electrostatic chuck |
JP5222442B2 (en) * | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and temperature control method for substrate to be processed |
JP5423632B2 (en) * | 2010-01-29 | 2014-02-19 | 住友大阪セメント株式会社 | Electrostatic chuck device |
WO2012050072A1 (en) * | 2010-10-13 | 2012-04-19 | 東洋紡績株式会社 | Polyimide film, method for manufacturing same, and method for manufacturing layered product |
JP6285620B2 (en) * | 2011-08-26 | 2018-02-28 | 新光電気工業株式会社 | Electrostatic chuck and semiconductor / liquid crystal manufacturing equipment |
JP6017781B2 (en) * | 2011-12-07 | 2016-11-02 | 新光電気工業株式会社 | Substrate temperature adjustment fixing device and manufacturing method thereof |
-
2013
- 2013-12-31 CN CN201310750732.8A patent/CN104752301B/en active Active
-
2014
- 2014-12-26 TW TW103145700A patent/TWI540674B/en active
- 2014-12-29 WO PCT/CN2014/095353 patent/WO2015101259A1/en active Application Filing
- 2014-12-29 KR KR1020167016577A patent/KR20160088426A/en not_active Application Discontinuation
- 2014-12-29 JP JP2016541702A patent/JP6524098B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11476147B2 (en) * | 2018-03-13 | 2022-10-18 | Ngk Insulators, Ltd. | Wafer holding table |
Also Published As
Publication number | Publication date |
---|---|
JP2017504195A (en) | 2017-02-02 |
JP6524098B2 (en) | 2019-06-05 |
WO2015101259A1 (en) | 2015-07-09 |
TW201526156A (en) | 2015-07-01 |
KR20160088426A (en) | 2016-07-25 |
CN104752301A (en) | 2015-07-01 |
CN104752301B (en) | 2018-05-25 |
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