TWI435461B - Method and system for obtaining the process history of the solar cell - Google Patents
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Description
本發明係關於一種記錄太陽能晶片製程履歷的方法及系統,特別是針對串列式連續生產線的製程型態。The present invention relates to a method and system for recording a solar wafer process history, and more particularly to a process configuration for a tandem continuous production line.
近年來,由於環保意識的抬頭和其他能源逐漸的枯竭,太陽能電池(solar cell)產業逐漸興起,而如何提高太陽能電池的光電轉換效率,也成為現今研究的焦點。若能在太陽能製程中應用先進製程控制(APC)系統,也有利於提高太陽能電池的良率。In recent years, due to the rise of environmental awareness and the gradual depletion of other energy sources, the solar cell industry has gradually emerged, and how to improve the photoelectric conversion efficiency of solar cells has become the focus of current research. If advanced process control (APC) systems can be applied in the solar process, it will also help to improve the yield of solar cells.
在傳統半導體積體電路的製程型態,如圖1所示,每次只將一片晶圓10由晶圓盒1中抽出,再放入腔體11,以在晶圓10上製作元件及元件之間的電路連線。為了提升晶圓10的產能及良率,利用先進製程控制系統來監控設備與晶圓的狀況,已非常普及。比如:自動偵測製程參數的錯誤,對製程配方(process recipes)進行調整,以消除或減少參數飄移等干擾因素對晶圓造成的影響,並記錄每一片晶圓的製程履歷。In the process type of the conventional semiconductor integrated circuit, as shown in FIG. 1, only one wafer 10 is taken out from the wafer cassette 1 at a time, and then placed in the cavity 11 to fabricate components and components on the wafer 10. The circuit is connected between the wires. In order to increase the throughput and yield of the wafer 10, it has become very popular to use advanced process control systems to monitor the condition of the devices and wafers. For example, automatic detection of process parameter errors, process recipes are adjusted to eliminate or reduce the impact of interference factors such as parameter drift on the wafer, and record the process history of each wafer.
此外,先進製程控制系統一旦偵測到設備發生異常狀況,造成晶圓的製程參數不在預設的範圍之內時,便會將該片晶圓加以標記,在完成所有的積體電路製程後,研發人員再藉由追蹤該晶圓的製程履歷,分析此異常狀況對電性量測結果是否造成影響。In addition, once the advanced process control system detects an abnormal condition of the device and causes the process parameters of the wafer to be out of the preset range, the wafer is marked. After all the integrated circuit processes are completed, The R&D personnel then analyze the process history of the wafer to analyze whether the abnormal condition affects the electrical measurement result.
雖然在半導體產業中,先進製程控制的技術已相當成熟,然而,對於太陽能電池產業而言卻尚未開發。原因是一片太陽能晶片的產值小於積體電路晶圓約數百甚至數仟倍,若將使用於半導體積體電路的先進製程控制系統,直接應用於太陽能晶片製程中,不符合整體製程的經濟效益。Although advanced semiconductor process control technology is quite mature in the semiconductor industry, it has not yet been developed for the solar cell industry. The reason is that the output value of a solar chip is less than hundreds or even several times that of the integrated circuit wafer. If the advanced process control system used in the semiconductor integrated circuit is directly applied to the solar wafer process, the economic benefits of the overall process are not met. .
並且,為了提高生產速率,太陽能晶片的製程型態趨向以串列式連續性生產(in-line continuous production line)。如圖2,多個太陽能晶片20放置於輸送帶21上,連續傳送至不同的製程站22、23進行處理。雖然此種製程方式可以有很大的生產量,但放置於輸送帶21上的太陽能晶片20彼此都很接近,而傳統的先進製程控制系統僅適用於每次進行單一晶片的製程,並不適用於串列式連續生產的製程型態。Also, in order to increase the production rate, the process pattern of the solar wafer tends to be in-line continuous production line. As shown in Fig. 2, a plurality of solar wafers 20 are placed on the conveyor belt 21 and continuously conveyed to different process stations 22, 23 for processing. Although such a process can have a large throughput, the solar wafers 20 placed on the conveyor belt 21 are close to each other, and the conventional advanced process control system is only suitable for each single wafer process, and is not applicable. Process type in tandem continuous production.
目前在太陽能晶片製備過程中,雖然能做到針對設備本身的狀況進行監控,但是其設備的製程參數,卻沒有辦法一一對應到太陽能晶片,無法得知太陽能晶片製程履歷。當檢測結果不如預期時,很難由製程參數分析原因,以排除異常狀況,並且,要進一步對製程參數做最佳化的調整時,也具有一定的難度。At present, in the solar wafer preparation process, although the condition of the device itself can be monitored, the process parameters of the device have no corresponding method to the solar wafer, and the solar wafer process history cannot be known. When the test result is not as expected, it is difficult to analyze the cause by the process parameters to eliminate the abnormal condition, and it is also difficult to further optimize the process parameters.
因此,針對太陽能晶片的製程型態,有必要發展一種類似先進製程控制系統的方法,以得知太陽能晶片的製程履歷。並可以在太陽能電池良率降低時,藉由分析製程參數及測試結果的關係,來找出問題所在,提升太陽能晶片的光電轉換效率。Therefore, for the process type of solar wafers, it is necessary to develop a method similar to an advanced process control system to know the process history of the solar wafer. And when the solar cell yield is reduced, by analyzing the relationship between the process parameters and the test results, the problem can be found and the photoelectric conversion efficiency of the solar wafer can be improved.
有鑒於上述課題,本發明之目的之一在於提供一種記錄太陽能晶片製程履歷的方法,使用於太陽能晶片(solar cell)的串列式連續生產線,同時也可以作為太陽能晶片生產線的先進製程控制技術。In view of the above problems, it is an object of the present invention to provide a method for recording a solar wafer process history, which is used in a tandem continuous production line of solar cells, and can also be used as an advanced process control technology for a solar wafer production line.
本發明的方法包括:預設複數個製程站於串列式連續生產線;預設至少一計數器於該些製程站中或該些製程站進出端;計算太陽能晶片通過每一該些計數器的時間,並依據計數器的晶片計數,建立每一片太陽能晶片的晶片序號,以得到晶片序號及時間的關係;記錄所述製程站的製程參數與時間的關係;最後,同步化製程參數及晶片序號所對應的時間,以得到每一片太陽能晶片的製程履歷。The method of the present invention includes: preset a plurality of process stations in a tandem continuous production line; preset at least one counter in the process stations or the process stations to enter and exit; calculating a time for the solar wafer to pass each of the counters, And according to the wafer count of the counter, the wafer serial number of each solar wafer is established to obtain the relationship between the serial number and the time of the wafer; the relationship between the process parameters of the processing station and the time is recorded; finally, the synchronization process parameters and the wafer serial number correspond to Time to get the process history of each solar wafer.
本發明之另一目的是,提供一種記錄太陽能晶片製程履歷的系統,用於太陽能晶片的串列式連續生產線,其中串列式連續生產線具有複數個製程站,所述的系統包括:一晶片計數監控模組,包含:複數個計數器,一一設置於該些製程站,以記錄通過的太陽能晶片計數,藉此建立每一太陽能晶片的晶片序號;一輸出裝置,計算太陽能晶片通過每一計數器的時間,並輸出太陽能晶片的晶片序號與時間的關係;及一參數監控模組,用以輸出該些製程站的製程參數與時間的關係,其中,藉由同步化製程參數,及晶片序號所對應的時間,以得到每一片太陽能晶片的製程履歷。Another object of the present invention is to provide a system for recording a solar wafer process history for a tandem continuous production line of solar wafers, wherein the tandem continuous production line has a plurality of process stations, and the system includes: a wafer count The monitoring module comprises: a plurality of counters disposed at the processing stations to record the passed solar wafer counts, thereby establishing a wafer serial number of each solar wafer; and an output device for calculating the solar wafer passing through each counter Time, and output the relationship between the serial number of the solar wafer and the time; and a parameter monitoring module for outputting the relationship between the process parameters of the processing stations and the time, wherein the process parameters are synchronized by the process number and the wafer serial number Time to get the process history of each solar wafer.
本發明之方法及系統可以整合於原本的製程中,相較於傳統半導體積體電路製程中所使用的先進製程控制方法而言,不僅簡便且成本低廉。當製程參數出現問題時,本發明之系統可以自動對製程參數異常的太陽能電池做標記,以便事後追蹤此製程參數是否為造成太陽能晶片良率下降的主因。並且,檢測人員可以適時調整製程參數,來最佳化太陽能電池的品質。The method and system of the present invention can be integrated into the original process, which is not only simple but also low in cost compared to the advanced process control methods used in conventional semiconductor integrated circuit processes. When there is a problem with the process parameters, the system of the present invention can automatically mark the solar cells with abnormal process parameters, so as to track whether the process parameters are the main cause of the decline in the yield of the solar wafer. Moreover, the tester can adjust the process parameters in a timely manner to optimize the quality of the solar cell.
為使本發明之上述目的、特徵和優點能更明顯易懂,下文依本發明於記錄太陽能晶片製程履歷的方法及系統,特舉較佳實施例,並配合所附相關圖式,作詳細說明如下,其中相同的元件將以相同的元件符號加以說明。In order to make the above-mentioned objects, features and advantages of the present invention more comprehensible, the method and system for recording a solar wafer process history according to the present invention will be described in detail with reference to the accompanying drawings. The same elements will be described with the same element symbols as follows.
本發明記錄太陽能晶片製程履歷的方法,是藉由設置多個計數器,其中,藉由計數器所記錄的太陽能晶片計數可建立每一太陽能晶片的晶片序號,並藉由推算太陽能晶片通過計數器的時間,得到晶片序號與時間的關係。在同步化各個製程站的製程參數及晶片序號所對應的時間後,可進一步得知太陽能晶片的製程履歷。The method for recording a solar wafer process history of the present invention is to set a plurality of counters, wherein the number of wafers of each solar wafer can be established by counting the solar wafers recorded by the counter, and by estimating the time when the solar wafer passes the counter, The relationship between the wafer serial number and time is obtained. After synchronizing the process parameters of the respective process stations and the time corresponding to the wafer serial number, the process history of the solar wafer can be further known.
如前所述,太陽能晶片的製程型態屬於串列式連續生產線,且包含多道製程。本實施例中,僅以其中兩道製程為例,以便具有通常知識者能了解本發明之精神。As mentioned above, the process pattern of the solar wafer belongs to a tandem continuous production line and includes multiple processes. In this embodiment, only two of the processes are taken as an example, so that those having ordinary knowledge can understand the spirit of the present invention.
請參照圖3,顯示記錄太陽能晶片製程履歷的系統3應用於部分製程的實施例。圖中顯示太陽能晶片20放置於一輸送帶21上,依序運送至第一製程站6及第二製程站7進行熱處理製程。記錄太陽能晶片製程履歷的系統3包括一晶片計數監控模組33及一參數監控模組34。Referring to FIG. 3, an embodiment in which the system 3 for recording the solar wafer process history is applied to a partial process is shown. The figure shows that the solar wafer 20 is placed on a conveyor belt 21 and sequentially transported to the first process station 6 and the second process station 7 for heat treatment. The system 3 for recording the solar wafer process history includes a wafer count monitoring module 33 and a parameter monitoring module 34.
晶片計數監控模組33包括一輸出裝置330及複數個計數器331~333。其中,計數器331~333的數量及位置,可依照需求,設置於製程站中,或製程站的進出端。本發明實施例中,於第一製程站6及第二製程站7進出端,分別設置了第一至第三計數器331~333。The chip count monitoring module 33 includes an output device 330 and a plurality of counters 331-333. The number and position of the counters 331~333 can be set in the process station or the entry and exit end of the process station according to requirements. In the embodiment of the present invention, the first to third counters 331 to 333 are respectively disposed at the entry and exit ends of the first process station 6 and the second process station 7.
由於計數器之間的距離,及輸送帶21的傳送速率是固定的,因此,可以計算太陽能晶片20通過每一計數器的時間。並且,太陽能晶片20通過這些計數器時,所被記錄的晶片計數,可視為每一片太陽能晶片的晶片序號。Since the distance between the counters and the transfer rate of the conveyor belt 21 are fixed, the time during which the solar wafer 20 passes each counter can be calculated. Moreover, when the solar wafer 20 passes through these counters, the recorded wafer count can be regarded as the wafer serial number of each solar wafer.
輸出裝置330記錄每一片太陽能晶片通過每一計數器的時間,並輸出晶片序號與時間的關係,可選擇以列表清單及/或關係圖表示。其中,以列表清單表示方式舉例如下表1。The output device 330 records the time each solar chip passes through each counter, and outputs the wafer serial number versus time, optionally in a list of listings and/or a relationship diagram. Among them, the list of the list is shown in the following Table 1.
為了將製程站的製程參數對應至太陽能晶片20,參數監控模組34用來監控並記錄第一製程站6及第二製程站7的製程參數,並輸出製程參數與時間的關係。其記錄或輸出的方式可以選擇文字、列表清單、關係圖及其任意組合之群組其中之一種方式表示。In order to map the process parameters of the process station to the solar wafer 20, the parameter monitoring module 34 is used to monitor and record the process parameters of the first process station 6 and the second process station 7, and output the relationship between the process parameters and time. The way of recording or outputting can be expressed by one of a group of words, a list of lists, a diagram, and any combination thereof.
本發明實施例中,不同製程站的製程參數和時間的關係,如圖4所示。其中,圖4中顯示第一製程站6及第二製程站7在不同時間,分別依序記錄參數表410~412及420~422。其中P11 、P12 ...P1n 及P21 、P22 ...P2n 分別代表第一製程站6及第二製程站7的製程參數,依據不同製程站,被記錄的參數也會不同。在本發明實施例中,由於第一及第二製程站用來做熱處理製程,製程參數包括溫度、壓力、持溫時間、通入的氣氛等等。但若是在粗糙化製程站,製程參數則改為記錄化學溶液的種類、濃度、晶片浸泡的時間等等。In the embodiment of the present invention, the relationship between the process parameters and time of different process stations is as shown in FIG. 4 . 4 shows that the first process station 6 and the second process station 7 record the parameter tables 410-412 and 420-422 in sequence at different times. Wherein P 11 , P 12 ... P 1n and P 21 , P 22 ... P 2n respectively represent process parameters of the first process station 6 and the second process station 7, and according to different process stations, the recorded parameters are also different. In the embodiment of the present invention, since the first and second process stations are used for the heat treatment process, the process parameters include temperature, pressure, temperature holding time, atmosphere to be introduced, and the like. However, if it is in the roughening process station, the process parameters are changed to record the type and concentration of the chemical solution, the time of wafer immersion, and so on.
記錄製程參數與時間的關係時,可以預設一較長週期,比如:設定每十分鐘或半小時記錄一次,如圖4中參數表420~422。當參數監控模組34偵測到異常狀況,如原本設定的製程參數,超過一預設範圍,才在異常狀況產生的時間點增加記錄,或改為較短週期記錄一次,直到異常排除,如圖4中參數表411~412。When recording the relationship between process parameters and time, you can preset a longer period, for example, set every ten minutes or half an hour to record, as shown in parameter table 420~422 in Figure 4. When the parameter monitoring module 34 detects an abnormal condition, such as the originally set process parameter, exceeds a preset range, the record is added at the time point when the abnormal condition occurs, or is changed to a shorter period record until the abnormality is eliminated, such as The parameter tables 411 to 412 in Fig. 4 are shown.
參數監控模組34會自動記錄並標記事件發生時間區域。請參照圖4,在10:00:25至10:00:35時,假設第一製程站6的溫度參數P11 由於燈管破裂,熱處理溫度由預設的500±5℃降到400℃,參數監控模組34會將此時間區段,及異常的參數加框標示,或者以不同顏色或字體的方式顯示,當然,具有通常知識者所能想到的註記方式皆可以使用。The parameter monitoring module 34 automatically records and marks the event occurrence time area. Referring to FIG 4, at the time 10:00:25 to 10:00:35, system temperature parameter is assumed that the first process station 6. P 11 due tube rupture, the heat treatment temperature is decreased from a predetermined 500 ± 5 ℃ 400 ℃, The parameter monitoring module 34 will mark the time segment and the abnormal parameters in a different color or font manner. Of course, the annotation methods that can be thought of by the ordinary knowledge can be used.
最後,同步化參數監控模組34輸出的製程參數,及晶片序號所對應的時間,以得到每一片太陽能晶片的製程履歷。比如,以上表1及圖4來做對比,可以看出序號”1”之太陽能晶片在第一製程站6的製程參數,即為圖4中參數表411所列舉的參數,依此類推。Finally, the process parameters output by the parameter monitoring module 34 and the time corresponding to the wafer serial number are synchronized to obtain a process history of each solar chip. For example, comparing Table 1 above with FIG. 4, it can be seen that the process parameters of the solar wafer of the serial number "1" at the first process station 6, that is, the parameters listed in the parameter table 411 in FIG. 4, and so on.
可以選擇性的藉由一處理器35來做數據的計算分析及比對。除此之外,當製程站有異常狀況產生時,只要對照晶片序號,即可追蹤當時是哪一片太陽能晶片在異常的製程參數下進行製程。The calculation analysis and comparison of the data can be selectively performed by a processor 35. In addition, when an abnormal situation occurs in the process station, by referring to the wafer serial number, it is possible to track which solar wafer is under the abnormal process parameters.
如圖4所示,當時間在10:00:25至10:00:35時,第一製程站6的參數P11 發生異常,對照表1,就可以得知是序號”2~4”的太陽能晶片製程有問題。處理器35記錄序號”2~4”的太陽能晶片,以便在整批太陽能晶片完成製程後,有利於研發人員追蹤此因素是否造成良率下降。4, when the time in the time 10:00:25 to 10:00:35, the process parameters of the first station 6 of abnormal P 11, table 1, that may be the serial number "2 to 4" There is a problem with the solar wafer process. The processor 35 records the solar chips of the serial number "2~4" so that the developer can track whether this factor causes a drop in yield after the entire batch of solar wafers is completed.
為了便於查詢每一太陽能晶片的資料,處理器35中更包括一儲存單元350,以儲存晶片序號、個數、製程參數與時間的關係,以及太陽能晶片的製程履歷。In order to facilitate querying the data of each solar chip, the processor 35 further includes a storage unit 350 for storing the serial number, the number of the wafer, the relationship between the process parameters and the time, and the process history of the solar wafer.
本發明實施例中,為了判斷計數器331~333是否累加計次,每一計數器331~333更包括一偵測器3310~3330,偵測器3310~3330可週期性的發射脈衝信號,並藉由是否接收到太陽能晶片20反射的信號,來判別太陽能晶片20是否通過計數器331~333。In the embodiment of the present invention, in order to determine whether the counters 331 333 333 are accumulatively counted, each of the counters 331 333 333 further includes a detector 3310 ~ 3330, and the detectors 3310 ~ 3330 can periodically transmit a pulse signal, and Whether or not the signal reflected by the solar wafer 20 is received is determined whether or not the solar wafer 20 passes through the counters 331 to 333.
由於太陽能晶片20具有一定的寬度,因此,通過計數器331~333時,偵測器3310~3330會收到密集的反射信號。請參照圖5A,顯示通過計數器331的晶片個數和時間的關係,圖5B則表示在不同時間點,偵測器所接收的反射訊號強度。Since the solar wafer 20 has a certain width, the detectors 3310 to 3330 receive dense reflection signals when passing through the counters 331 to 333. Referring to FIG. 5A, the relationship between the number of wafers passing through the counter 331 and the time is shown, and FIG. 5B shows the intensity of the reflected signal received by the detector at different time points.
由圖5B中可以看出,在t=0至t=t1 時,偵測器3310連續接收到5次太陽能晶片的反射訊號,代表太陽能晶片完全通過計數器331,此時,計數器331才自動累加計次,但在t=t1 至t=t2 的時間內,偵測器就只能收到背景訊號。As can be seen from FIG. 5B, when t=0 to t=t 1 , the detector 3310 continuously receives the reflection signal of the solar wafer 5 times, and the solar wafer completely passes through the counter 331. At this time, the counter 331 is automatically accumulated. Counting, but during t=t 1 to t=t 2 , the detector can only receive the background signal.
另外,若太陽能晶片在被傳送過程中,由於破裂被清掉時,由關係圖中也能夠判別。請參照圖5C及圖5D,在t=t2 至t=t3 的時間,沒有出現預期的反射訊號,即可判定該太陽能晶片已經被清掉,則通過此計數器的晶片個數會比原先所預估的少。並且,由時間點及圖示中,也可以推知哪一片太陽能晶片已被清除,所以當晶片序號對應到製程參數時,不會造成太陽能晶片的製程履歷混淆的問題。In addition, if the solar wafer is removed during the process of being transferred, it can be discriminated from the relationship diagram. Referring to FIG. 5C and FIG. 5D, when the expected reflection signal is not present at time t=t 2 to t=t 3 , it can be determined that the solar wafer has been cleared, and the number of wafers passing through the counter will be larger than the original. The estimate is small. Further, from the time point and the illustration, it can be inferred which piece of the solar wafer has been removed. Therefore, when the wafer serial number corresponds to the process parameter, there is no problem that the process history of the solar wafer is confused.
將本發明之方法及系統擴展應用於整個太陽能晶片製程的實施例如圖6所示。一般太陽能晶片的製程依序為粗糙化90(texturing)、擴散摻雜91(diffusion)、絕緣92(isolation)、鍍抗反射層93(ARC deposition)、網印電極94(screen printing)、燒結95(co-firing)及測試分類96(testing and sorting)等製程站,並記錄上述製程站的製程參數P1 ~Pn 與時間的關係。An embodiment in which the method and system of the present invention are extended to the entire solar wafer process is shown in FIG. Generally, the process of the solar wafer is followed by texturing, diffusion doping 91, isolation 92, ARC deposition, screen printing, and sintering 95. (co-firing) and test class 96 (testing and sorting) and other process stations, and record the relationship between the process parameters P 1 ~ P n of the above process station and time.
如前述方式,將多個計數器分設於製程站中,並記錄晶片序號與時間的關係,藉由將該些製程參數及晶片序號的時間同步化,以得到每一片太陽能晶片的製程履歷。In the foregoing manner, a plurality of counters are separately set in the process station, and the relationship between the serial number and the time of the wafer is recorded, and the process history of each of the solar wafers is obtained by synchronizing the process parameters and the time of the wafer serial number.
綜上所述,本發明所提供的記錄太陽能晶片製程履歷的方法及系統,具有下列優點:In summary, the method and system for recording a solar wafer process history provided by the present invention have the following advantages:
(1) 僅利用設置計數器,利用同步化時序的方式,即解決以往在串列式連續生產線的製程型態,無法追蹤太陽能晶片製程參數的問題,其功效如同串列式連續生產線的先進控制製程系統(APC)。(1) Using only the setting counter and using the synchronization timing method, that is, solving the process type of the conventional tandem continuous production line, the problem of the solar wafer process parameters cannot be traced, and the effect is like the advanced control process of the tandem continuous production line. System (APC).
(2) 製程參數校正更容易。由於每一片太陽能晶片的製程參數都可以被記錄及建檔,並且,對於製程參數異常的晶片也可以加以標記。當太陽能電池的良率下降時,檢測人員可以進行分析,確認問題所在,也可以適時調整製程參數,最佳化太陽能電池的品質。(2) Process parameter correction is easier. Since the process parameters of each solar wafer can be recorded and documented, and wafers with abnormal process parameters can also be marked. When the yield of the solar cell drops, the tester can analyze and confirm the problem, and can also adjust the process parameters in time to optimize the quality of the solar cell.
(3) 方法簡單,成本低廉,可整合於原先的製程中使用,達到對太陽能晶片的製程參數做追蹤,以排除異常或最佳化製程的目的。相較於半導體積體電路中的先進控制製程系統,本發明所耗費成本卻更低廉。(3) The method is simple, the cost is low, and can be integrated into the original process to track the process parameters of the solar wafer to eliminate the abnormality or optimize the process. Compared with the advanced control process system in the semiconductor integrated circuit, the invention is less expensive.
本發明雖以較佳實例闡明如上,然其並非用以限定本發明精神與發明實體僅止於上述實施例。凡熟悉此項技術者,當可輕易了解並利用其它元件或方式來產生相同的功效。是以,在不脫離本發明之精神與範疇內所作之修改,均應包含在下述之申請專利範圍內。The present invention has been described above by way of a preferred example, but it is not intended to limit the spirit of the invention and the inventive subject matter. Those who are familiar with the technology can easily understand and utilize other components or methods to produce the same effect. Modifications made without departing from the spirit and scope of the invention are intended to be included within the scope of the appended claims.
1...晶圓盒1. . . Wafer box
10...晶圓10. . . Wafer
11...腔體11. . . Cavity
20...太陽能晶片20. . . Solar wafer
21...輸送帶twenty one. . . conveyor
22、23...製程站22, 23. . . Process station
3...記錄太陽能晶片製程履歷的系統3. . . System for recording solar wafer process history
33...晶片計數監控模組33. . . Wafer count monitoring module
330...輸出裝置330. . . Output device
332...第二計數器332. . . Second counter
331...第一計數器331. . . First counter
3310~3330...偵測器3310~3330. . . Detector
333...第三計數器333. . . Third counter
35...處理器35. . . processor
34...參數監控模組34. . . Parameter monitoring module
6...第一製程站6. . . First process station
350...儲存單元350. . . Storage unit
7...第二製程站7. . . Second process station
410、411、412...第一製程站參數表410, 411, 412. . . First process station parameter table
420、421、422...第二製程站參數表420, 421, 422. . . Second process station parameter table
90...粗糙化製程站90. . . Roughening process station
91...擴散摻雜製程站91. . . Diffusion doped process station
92...絕緣製程站92. . . Insulation process station
93...鍍抗反射層製程站93. . . Anti-reflective coating process station
94...網印電極製程站94. . . Screen printing electrode processing station
95...燒結製程站95. . . Sintering process station
96...測試分類站96. . . Test sorting station
P1 ~Pn 、P11 ~P1n 、P21 ~P2n ...製程參數P 1 ~P n , P 11 ~P 1n , P 21 ~P 2n . . . Process parameter
圖1顯示傳統半導體積體電路的製程型態;Figure 1 shows a process type of a conventional semiconductor integrated circuit;
圖2顯示太陽能晶片的製程型態;Figure 2 shows the process type of the solar wafer;
圖3顯示本發明記錄太陽能晶片製程履歷的系統應用於部分製程的實施例;3 shows an embodiment of a system for recording a solar wafer process history of the present invention applied to a partial process;
圖4顯示不同製程站的製程參數和時間的關係;Figure 4 shows the relationship between process parameters and time for different process stations;
圖5A及圖5C顯示計數器的晶片計數和時間的關係圖;5A and 5C are diagrams showing the relationship between the wafer count of the counter and the time;
圖5B及圖5D顯示偵測器測到太陽能晶片反射訊號強度和時間的關係;及5B and FIG. 5D show the relationship between the intensity and time of the solar cell reflection signal detected by the detector;
圖6顯示本發明記錄太陽能晶片製程履歷的系統應用於太陽能晶片全部製程的實施例。6 shows an embodiment of a system for recording a solar wafer process history of the present invention applied to a full process of a solar wafer.
3...記錄太陽能晶片製程履歷的系統3. . . System for recording solar wafer process history
20...太陽能晶片20. . . Solar wafer
330...輸出裝置330. . . Output device
21...輸送帶twenty one. . . conveyor
33...晶片計數監控模組33. . . Wafer count monitoring module
331...第一計數器331. . . First counter
332...第二計數器332. . . Second counter
333...第三計數器333. . . Third counter
35...處理器35. . . processor
3310~3330...偵測器3310~3330. . . Detector
6...第一製程站6. . . First process station
34...參數監控模組34. . . Parameter monitoring module
7...第二製程站7. . . Second process station
350...儲存單元350. . . Storage unit
Claims (11)
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TW100107473A TWI435461B (en) | 2011-03-04 | 2011-03-04 | Method and system for obtaining the process history of the solar cell |
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