TWI427513B - Construction Method and Structure of Bridge Erection with Shaded High Brightness - Google Patents
Construction Method and Structure of Bridge Erection with Shaded High Brightness Download PDFInfo
- Publication number
- TWI427513B TWI427513B TW99134124A TW99134124A TWI427513B TW I427513 B TWI427513 B TW I427513B TW 99134124 A TW99134124 A TW 99134124A TW 99134124 A TW99134124 A TW 99134124A TW I427513 B TWI427513 B TW I427513B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- substrate
- pattern
- photoresist
- Prior art date
Links
Landscapes
- Position Input By Displaying (AREA)
Description
本發明係關於一種具遮蔽亮點的橋接式電極佈設方法與其結構,特別是利用一導電對應層於導電層的一側,用以遮蔽該導電層所產生亮點的佈設方法與結構。The invention relates to a method for laying a bridge electrode with shielding bright spots and a structure thereof, in particular to a method and a structure for shielding a bright spot generated by the conductive layer by using a conductive corresponding layer on one side of the conductive layer.
於習知技術中,在電容式觸控面板的製程中,係於基板上形成兩個不同軸向的電極,並且在其中之一軸向的電極上再次形成絕緣層,用以提供另一軸向的電極透過該絕緣層上所設置的金屬導線進行電連接。然而,傳統上由於設置於絕緣層上的金屬導線係有可能因為在後續的製程中,造成該金屬導線的損壞,使得無法導通,進而造成電容式觸控面板製作良率的下降。In the prior art, in the process of the capacitive touch panel, two different axial electrodes are formed on the substrate, and an insulating layer is formed on one of the axial electrodes to provide another axis. The electrodes are electrically connected through the metal wires provided on the insulating layer. However, conventionally, the metal wire disposed on the insulating layer may be damaged due to damage of the metal wire in a subsequent process, thereby causing the conductivity of the capacitive touch panel to decrease.
故於一些技術中,可再藉由橋接式溝槽的技術將該金屬導線設置於該橋接式溝槽,其可避免該金屬導線遭到損壞。然而,解決該金屬導線可避免遭到損壞的疑慮後,該金屬導線在組裝完成該電容式觸控面板後,於該觸控面板產生複數亮點,如第1圖所示,對於顯示造成了困擾。Therefore, in some techniques, the metal wire can be placed in the bridge groove by the technique of a bridge groove, which can prevent the metal wire from being damaged. However, after solving the problem that the metal wire can be damaged, the metal wire generates a plurality of bright spots on the touch panel after assembling the capacitive touch panel, as shown in FIG. 1 , which causes trouble for display. .
故有必要提供一種新的結構,除可有效率的提升該電容式觸控面板良率的提升外,更可提供避免該等亮點的產生。Therefore, it is necessary to provide a new structure, in addition to effectively improving the yield of the capacitive touch panel, and also to avoid the occurrence of such bright spots.
本發明的一目的係提供一種具遮蔽亮點的橋接式電極佈設方法,係利用導電對應層用以遮蔽該導電層,用以達到無亮點產生的目的。An object of the present invention is to provide a bridge electrode placement method with a shielding bright spot, which utilizes a conductive corresponding layer for shielding the conductive layer for the purpose of generating no bright spots.
本發明的另一目的係提供一種具遮蔽亮點的橋接式電極結構,係設置導電對應層於該導電層的一側,用以遮蔽該導電層所產生的亮點。Another object of the present invention is to provide a bridge electrode structure having a shielding bright spot, and a conductive corresponding layer is disposed on one side of the conductive layer for shielding a bright spot generated by the conductive layer.
為達上述目的及其它目的,本發明係提供一種具遮蔽亮點的橋接式電極佈設方法,其方法步驟包含:提供基板;形成透明導電層於該基板上,且該透明導電層係具有複數圖樣區塊彼此相鄰設置;形成配向膜層於該基板上,且該配向膜層具有複數橋接式溝槽用以橫跨在該等圖樣區塊之間;形成導電層於該基板上,且該導電層具有複數電導線分別對應設置於該等橋接式溝槽上;形成導電對應層係設置於該導電層的一側,用以遮蔽該等電導線;以及形成保護層於該基板上,用以增加光學透光率與保護該基板、該透明導電層、該配向膜層與該導電層。To achieve the above and other objects, the present invention provides a bridge electrode placement method with a bright spot, the method step of: providing a substrate; forming a transparent conductive layer on the substrate, and the transparent conductive layer has a plurality of pattern regions The blocks are disposed adjacent to each other; an alignment film layer is formed on the substrate, and the alignment film layer has a plurality of bridged trenches for spanning between the pattern blocks; forming a conductive layer on the substrate, and the conductive layer The layer has a plurality of electrical wires respectively disposed on the bridged trenches; a conductive corresponding layer is disposed on one side of the conductive layer for shielding the electrical wires; and a protective layer is formed on the substrate for The optical transmittance is increased and the substrate, the transparent conductive layer, the alignment film layer and the conductive layer are protected.
為達上述目的及其它目的,本發明係提供一種具遮蔽亮點的橋接式電極結構,係用於電容式觸控板,其包含基板、複數第一電極區塊、複數第二電極區塊、橋接絕緣單元與複數電極對應區塊。其中,該等第一電極區塊係設置於該基板且透過第一導線進行串聯電連接;該等第二電極區塊係設置於該基板且該等第二電極區塊係分別地設置於該第一導線的兩側;該橋接絕緣單元係垂直地設置於該第一導線,且該橋接絕緣單元具有橋接式溝槽,而該橋接式溝槽的高度係低於該橋接絕緣單元的高度;以及該等電極對應區塊係遮蔽該等第一電極區塊及/或該等第二電極區塊。其中,該等第二電極區塊係藉由具有第二導線的該橋接絕緣單元進行串聯電連接。To achieve the above and other objects, the present invention provides a bridge electrode structure with a bright spot, which is used for a capacitive touch panel, comprising a substrate, a plurality of first electrode blocks, a plurality of second electrode blocks, and a bridge The insulating unit and the plurality of electrodes correspond to the block. The first electrode blocks are disposed on the substrate and are electrically connected in series through the first wires; the second electrode blocks are disposed on the substrate and the second electrode blocks are respectively disposed on the substrate The two sides of the first wire; the bridge insulation unit is vertically disposed on the first wire, and the bridge insulation unit has a bridge groove, and the height of the bridge groove is lower than the height of the bridge insulation unit; And the corresponding blocks of the electrodes shield the first electrode blocks and/or the second electrode blocks. The second electrode blocks are electrically connected in series by the bridge insulating unit having the second wire.
為達上述目的及其它目的,本發明係提供一種具遮蔽亮點的橋接式電極結構,其包含基板層、透明導電層、配向膜層、導電層與導電對應層。其中,該透明導電層係設置於該基板至少一側;該配向膜層係設置於該基板層的一側;該導電層係鄰接設置於該配向膜層的一側;以及該導電對應層係設置於該導電層的一側,用以遮蔽該導電層。此外,具遮蔽亮點的該橋接式電極結構進一步包含在該橋接式電極結構的至少一側設置一保護層。To achieve the above and other objects, the present invention provides a bridge electrode structure having a masking bright spot, comprising a substrate layer, a transparent conductive layer, an alignment film layer, a conductive layer and a conductive corresponding layer. The transparent conductive layer is disposed on at least one side of the substrate; the alignment film layer is disposed on one side of the substrate layer; the conductive layer is adjacent to one side of the alignment film layer; and the conductive corresponding layer is And disposed on one side of the conductive layer to shield the conductive layer. In addition, the bridge electrode structure with shielding bright spots further includes a protective layer disposed on at least one side of the bridge electrode structure.
與習知技術相較,本發明的具遮蔽亮點的橋接式電極的佈設方法及其結構,係除可有效地提高製程良率外,可再藉由導電對應層遮蔽該導電層,用以達成在電容式觸控板上無任何亮點產生,且於其一實施例中,特別係可導電層的光阻不剝膜(strip)的情況下,仍可達成在電容式觸控板遮蔽亮點的目的。Compared with the prior art, the method for arranging the bridged electrodes with shielding spots and the structure thereof are not only effective for improving the process yield, but also shielding the conductive layer by the conductive corresponding layer. There is no bright spot on the capacitive touch panel, and in one embodiment, especially in the case where the photoresist of the conductive layer is not stripped, the highlight of the capacitive touch panel can be achieved. purpose.
為充分瞭解本發明的目的、特徵及功效,茲藉由下述具體實施例,並配合所附圖式,對本發明做一詳細說明,說明如後:參考第2至5圖,係本發明具遮蔽亮點的橋接式電極佈設方法的流程示意圖。於第2圖中,橋接式電極的佈設方法的步驟起始於步驟S1,係提供基板;接著步驟S2,係形成透明導電層於該基板上,且該透明導電層係具有複數圖樣區塊彼此相鄰設置;又接著步驟S3,係形成配向膜層於該基板上,且該配向膜層具有複數橋接式溝槽用以橫跨在該等圖樣區塊之間;再接著步驟S4,係形成導電層於該基板上,且該導電層具有複數電導線分別對應設置於該等橋接式溝槽上。其中,於另一實施例中,該導電層的該等電導線係藉由光學補償式光罩,配合過度曝光或者過度顯影的至少其一所形成;再接著步驟S5,係形成導電對應層且設置於該導電層的一側,用以遮蔽該等電導線;以及再一步驟S6,係形成保護層於該基板上,用以增加光學透光率與保護該基板、該透明導電層、該配向膜層與該導電層。In order to fully understand the objects, features and advantages of the present invention, the present invention will be described in detail with reference to the accompanying drawings. Schematic diagram of a bridge electrode placement method for shielding bright spots. In FIG. 2, the step of the method of arranging the bridge electrodes starts from step S1 to provide a substrate; then, in step S2, a transparent conductive layer is formed on the substrate, and the transparent conductive layer has a plurality of pattern blocks Adjacent to; and then step S3, forming an alignment film layer on the substrate, and the alignment film layer has a plurality of bridged trenches for traversing between the pattern blocks; and then step S4 is formed The conductive layer is disposed on the substrate, and the conductive layer has a plurality of electrical wires respectively disposed on the bridged trenches. In another embodiment, the electrically conductive wires of the conductive layer are formed by at least one of overexposure or overexposure by an optical compensation reticle; and then, in step S5, a conductive corresponding layer is formed. Provided on one side of the conductive layer for shielding the electric wires; and a further step S6, forming a protective layer on the substrate for increasing optical transmittance and protecting the substrate, the transparent conductive layer, An alignment film layer and the conductive layer.
再者,於第3圖係上述步驟S3的更詳細的步驟,其該配向膜層形成的步驟進一步包含,起始於步驟S3-1,係塗覆光阻於該基板上;接著步驟S3-2,係提供具有圖樣的光罩或具有半色調網點(Half tone)圖樣的光罩,並且藉由上述光罩用以將該圖樣或該半色調網點圖樣曝光於該光阻上;接著步驟S3-3,係顯影該圖樣或該半色調網點圖樣於該光阻上,用以形成具有橫跨在該等圖樣區塊之間的該等橋接式溝槽;以及,接著步驟S3-4,烘烤該光阻。Furthermore, in the third step of the above step S3, the step of forming the alignment film layer further comprises: starting with step S3-1, applying a photoresist to the substrate; and then step S3- 2, is to provide a mask or a mask having a halftone dot pattern, and the mask is used to expose the pattern or the halftone dot pattern to the photoresist; then step S3 -3, developing the pattern or the halftone dot pattern on the photoresist to form the bridged trenches spanning between the pattern blocks; and, following step S3-4, baking Bake the photoresist.
值得注意的是,上述具有該半色調網點圖樣的該光罩的形成步驟包含提供於該光罩的表面之不透光區域的線徑大於該半色調網點圖樣的線徑或形成複數孔洞(例如該等孔洞可為圓形、矩形或任意形狀),且平均地設置於該光罩的表面,以及經由曝光時光線對於該半色調網點圖樣所造成的干涉與繞射作用,使得該橋接式溝槽的光阻在顯影後該橋接式溝槽低於該橋接絕緣單元的高度。It should be noted that the step of forming the reticle having the halftone dot pattern includes the line diameter of the opaque region provided on the surface of the reticle being larger than the wire diameter of the halftone dot pattern or forming a plurality of holes (for example, The holes may be circular, rectangular or arbitrarily shaped, and are disposed evenly on the surface of the reticle, and the interference and diffraction caused by the light during exposure to the halftone dot pattern, so that the bridge groove The bridged trench is developed to have a lower height than the bridging insulating unit after development.
第4圖係上述步驟S4的詳細步驟,其該導電層形成的步驟進一步包含,起始於步驟S4-1,係濺鍍導電材料於該基板上;接著步驟S4-2,係塗覆光阻於該基板上;再接著步驟S4-3,係提供具有該光學補償式光罩,且透過該光學補償式光罩將對應該等電導線之電導線圖樣過度曝光於該光阻上;而接著步驟S4-4,係顯影該電導線圖樣,用以形成具有彼此相鄰的該等圖樣區塊,且該電導線圖樣係利用過度曝光與過度顯影而產生。Figure 4 is a detailed step of the above step S4, the step of forming the conductive layer further comprises: starting at step S4-1, sputtering a conductive material on the substrate; and subsequently applying a photoresist to the step S4-2 On the substrate; and then in step S4-3, the optical compensation type reticle is provided, and the electrical wiring pattern corresponding to the electric wires is overexposed on the photoresist through the optical compensation reticle; and then In step S4-4, the electrical lead pattern is developed to form the pattern blocks having adjacent to each other, and the electric lead pattern is generated by overexposure and overdevelopment.
第5圖係上述步驟S5的詳細步驟,其該導電對應層的形成步驟進一步包含,起始於步驟S5-1,係濺鍍導電材料於該基板上;接著步驟S5-2,係塗覆光阻於該基板上;接著步驟S5-3,係提供具有該光學補償式光罩,且透過該光學補償式光罩形成對應該等電導線之對應電導線圖樣過度曝光於該光阻上;以及,接著步驟S5-4,係顯影與剝膜該對應電導線圖樣,並再塗覆另一光阻並利用電導線之光罩用以形成遮蔽該電導線圖樣的導電對應層圖樣。Figure 5 is a detailed step of the above step S5, wherein the step of forming the conductive corresponding layer further comprises: starting in step S5-1, sputtering a conductive material on the substrate; and subsequently coating the light in step S5-2 Blocking on the substrate; then, in step S5-3, providing the optical compensation type reticle, and forming, by the optical compensation type reticle, a corresponding electric wire pattern corresponding to the electric conductor to be overexposed on the photoresist; Next, in step S5-4, the corresponding electrical conductor pattern is developed and stripped, and another photoresist is coated and a photomask of the electrical conductor is used to form a conductive corresponding layer pattern shielding the electrical conductor pattern.
第6圖係上述步驟S5的另一詳細步驟,其該導電對應層的形成步驟進一步包含,起始於步驟S5’-1,係濺鍍導電材料於該基板上;接著步驟S5’-2,係塗覆有色光阻於該基板上;接著步驟S5’-3,係提供具有該光學補償式光罩,且透過該光學補償式光罩形成對應該等電導線之對應電導線圖樣過度曝光於該光阻上;以及再接著步驟S5’-4,係顯影與不對該有色光阻進行該對應電導線圖樣的剝膜(strip),用以形成遮蔽該電導線圖樣的導電對應層圖樣。Figure 6 is another detailed step of the above step S5, the step of forming the conductive corresponding layer further comprises: starting at step S5'-1, sputtering a conductive material on the substrate; and then step S5'-2, Applying a colored photoresist to the substrate; then, in step S5'-3, providing the optically compensated reticle, and forming an appropriate electrical lead pattern corresponding to the isoelectric conductor through the optically compensated reticle to overexpose And the step S5'-4 is followed by developing and not stripping the corresponding electric trace pattern of the colored photoresist to form a conductive corresponding layer pattern shielding the electric trace pattern.
第7圖係上述步驟S5的又一詳細步驟,其中該導電對應層的形成步驟進一步包含,步驟S5”-1,係透過具有對應該電導線圖樣的網印或光罩(與形成導電層的製程相當),塗覆該有色光阻於該電導線圖樣上,用以形成遮蔽該電導線圖樣的導電對應層圖樣。Figure 7 is still another detailed step of the above step S5, wherein the step of forming the conductive corresponding layer further comprises, in step S5"-1, passing through a screen printing or mask having a corresponding electrical conductor pattern (and forming a conductive layer The process is equivalent to coating the colored photoresist on the electrical conductor pattern to form a conductive corresponding layer pattern that shields the electrical conductor pattern.
第8圖係上述步驟S6的詳細步驟,其進一步包含起始於步驟S6-1,塗覆一光阻、濺鍍一光阻或有機物的至少其一於該基板上;接著步驟S6-2,烘烤該光阻或該有機物,以形成硬式保護膜。Figure 8 is a detailed step of the above step S6, further comprising starting at step S6-1, coating at least one of a photoresist, a photoresist or an organic substance on the substrate; and then following step S6-2, The photoresist or the organic substance is baked to form a hard protective film.
參考第9a至9d圖,係本發明具遮蔽亮點的橋接式電極結構的示意圖。於本實施例中,本發明係提供一種橋接式電極結構,係用於電容式觸控板,其包含基板10、複數第一電極區塊12、複數第二電極區塊14與橋接絕緣單元16。該基板10的材質係可為玻璃材質,亦即玻璃基板。其中,該等第一電極區塊12係設置於該基板10且透過第一導線18進行串聯電連接。該等第二電極區塊14係設置於該基板10且該等第二電極區塊14係分別地設置於該第一導線18的兩側,而該等第二電極區塊14上係設置有第二導線24。該橋接絕緣單元16係垂直地設置於該第一導線18上,且該橋接絕緣單元16具有橋接式溝槽20,而該橋接式溝槽20的高度係低於該橋接絕緣單元16的高度。值得注意的是,於第9c圖中,複數電極對應區塊22係遮蔽該等第一電極區塊12上的該第一導線18及/或該等第二電極區塊14上的該第二導線24。其中,該等電極區塊12、14所對應的電極對應區塊22係可重疊於該等第一電極區塊12,亦或者該等電極對應區塊22係可完全地覆蓋對應於該等第一電極區塊12及該等第二電極區塊14,例如,該等電極對應區塊22係為有色光阻。Referring to Figures 9a through 9d, there is shown a schematic view of a bridged electrode structure with a bright spot in the present invention. In the present embodiment, the present invention provides a bridge type electrode structure for a capacitive touch panel comprising a substrate 10, a plurality of first electrode blocks 12, a plurality of second electrode blocks 14 and a bridge insulating unit 16 . The material of the substrate 10 may be a glass material, that is, a glass substrate. The first electrode blocks 12 are disposed on the substrate 10 and are electrically connected in series through the first wires 18 . The second electrode blocks 14 are disposed on the substrate 10 and the second electrode blocks 14 are respectively disposed on two sides of the first wire 18, and the second electrode blocks 14 are disposed on the second electrode block 14 The second wire 24. The bridge insulating unit 16 is vertically disposed on the first wire 18, and the bridge insulating unit 16 has a bridge groove 20, and the height of the bridge groove 20 is lower than the height of the bridge insulating unit 16. It should be noted that, in FIG. 9c, the plurality of electrode corresponding blocks 22 shield the first wires 18 on the first electrode blocks 12 and/or the second electrodes on the second electrode blocks 14 Wire 24. The electrode corresponding blocks 22 corresponding to the electrode blocks 12 and 14 may overlap the first electrode blocks 12, or the electrode corresponding blocks 22 may completely cover the corresponding portions. An electrode block 12 and the second electrode blocks 14, for example, the electrode corresponding blocks 22 are colored photoresists.
參考第10a至10d圖,係本發明具遮蔽亮點的橋接式電極結構的垂直剖面示意圖。於本實施例中,具遮蔽亮點的橋接式電極結構係用於電容式觸控板,其包含基板層S、透明導電層ECL、配向膜層PI、導電層CL、導電對應層SL與保護層PL。該透明導電層ECL係設置於該基板層S至少一側。該配向膜層PI係設置於該基板層S的一側。該導電層CL係鄰接設置於該配向膜層PI的一側,且該導電層CL係可為係鉬(MO)-鋁(AL)-鉬(MO)的結構。該導電對應層SL係設置於該導電層CL的一側,用以遮蔽該導電層CL,亦即該導電對應層SL係可設置於該導電層ECL與該保護層PL之間。於一實施例中,可參考第10a圖,導電對應層SL係設置於該導電層CL與該配向膜層PI之間,值得注意的是,為使該導電層CL與該透明導電層ECL連接,該導電層CL的長度係長於該導電對應層SL;於另一實施例中,可參考第10c圖,導電對應層SL係設置於該導電層CL一側;此外,第10b圖與第10d圖係分別地對應第10a圖與第10c圖之簡化製程之後的具遮蔽亮點的橋接式電極結構。故本發明係以包含標準製程、簡化製程與改良製程下的具遮蔽亮點的橋接式電極結構。Referring to Figures 10a through 10d, there is shown a vertical cross-sectional view of a bridged electrode structure with a bright spot in the present invention. In this embodiment, the bridge electrode structure with shielding bright spots is used for a capacitive touch panel, which comprises a substrate layer S, a transparent conductive layer ECL, an alignment film layer PI, a conductive layer CL, a conductive corresponding layer SL and a protective layer. PL. The transparent conductive layer ECL is disposed on at least one side of the substrate layer S. The alignment film layer PI is provided on one side of the substrate layer S. The conductive layer CL is adjacent to one side of the alignment film layer PI, and the conductive layer CL may be a structure of molybdenum (MO)-aluminum (AL)-molybdenum (MO). The conductive corresponding layer SL is disposed on one side of the conductive layer CL for shielding the conductive layer CL, that is, the conductive corresponding layer SL can be disposed between the conductive layer ECL and the protective layer PL. In an embodiment, referring to FIG. 10a, a conductive corresponding layer SL is disposed between the conductive layer CL and the alignment film layer PI. It is noted that the conductive layer CL is connected to the transparent conductive layer ECL. The length of the conductive layer CL is longer than the conductive corresponding layer SL. In another embodiment, referring to FIG. 10c, the conductive corresponding layer SL is disposed on the conductive layer CL side; in addition, the 10b and 10d The figure corresponds to the bridged electrode structure with a masking bright spot after the simplified process of the 10th and 10th drawings, respectively. Therefore, the present invention is a bridged electrode structure with a masking bright spot including a standard process, a simplified process, and an improved process.
此外,上述中的該橋接式電極結構係於至少一側設置保護層PL,於一實施例中,該導電對應層SL係可設置於該導電層ECL與該保護層PL之間。例如,該保護層PL係可為有機物層、光阻物層、抗反射層(anti-reflection;AR)、抗眩光層(anti-glare;AG)或上述的組合。熟悉該項技術領域者應當可以了解到,該保護層PL亦可忽略,而各層的排列製程順序亦可隨需求改變。In addition, the bridge electrode structure described above is provided with a protective layer PL on at least one side. In an embodiment, the conductive corresponding layer SL may be disposed between the conductive layer ECL and the protective layer PL. For example, the protective layer PL may be an organic layer, a photoresist layer, an anti-reflection layer (AR), an anti-glare layer (AG), or a combination thereof. Those skilled in the art should be able to understand that the protective layer PL can also be ignored, and the ordering process of each layer can also be changed as needed.
與習知技術相較,本發明具遮蔽亮點的橋接式電極佈設方法及其結構,除可有效地提高製程良率外,可再藉由導電對應層遮蔽該導電層,用以達成在電容式觸控板上無任何亮點產生,且於其一實施例中,可導電層的光阻在不剝膜(strip)的情況下,亦可達成在電容式觸控板遮蔽亮點的目的。Compared with the prior art, the bridge electrode arrangement method and structure thereof with shielding bright spots can effectively shield the conductive layer by the conductive corresponding layer, in addition to effectively improving the process yield. There is no bright spot on the touch panel, and in one embodiment, the photoresist of the conductive layer can achieve the purpose of shielding the bright spot on the capacitive touch panel without stripping.
本發明在上文中已以較佳實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明的範圍。應注意的是,舉凡與該實施例等效的變化與置換,均應設為涵蓋於本發明的範疇內。因此,本發明的保護範圍當以下文的申請專利範圍所界定者為準。The invention has been described above in terms of the preferred embodiments, and it should be understood by those skilled in the art that the present invention is not intended to limit the scope of the invention. It should be noted that variations and permutations equivalent to those of the embodiments are intended to be within the scope of the present invention. Therefore, the scope of the invention is defined by the scope of the following claims.
10...基板10. . . Substrate
12...第一電極區塊12. . . First electrode block
14...第二電極區塊14. . . Second electrode block
16...橋接絕緣單元16. . . Bridge insulation unit
18...第一導線18. . . First wire
20...橋接式溝槽20. . . Bridged trench
22...電極對應區塊twenty two. . . Electrode corresponding block
24...第二導線twenty four. . . Second wire
PL...保護層PL. . . The protective layer
ECL...透明導電層ECL. . . Transparent conductive layer
S...基板層S. . . Substrate layer
PI...配向膜層PI. . . Alignment layer
CL...導電層CL. . . Conductive layer
SL...導電對應層SL. . . Conductive corresponding layer
第1圖係傳統電容式觸控板示意圖;Figure 1 is a schematic diagram of a conventional capacitive touch panel;
第2至8圖係具遮蔽亮點的橋接式電極佈設方法的流程示意圖;2 to 8 are schematic flow diagrams of a method for laying bridge electrodes with shielding bright spots;
第9a至9d圖係具遮蔽亮點的橋接式電極結構的示意圖;以及Figures 9a to 9d are schematic views of a bridged electrode structure with a bright spot; and
第10a至10d圖係具遮蔽亮點的橋接式電極結構的垂直剖面示意圖。Figures 10a through 10d are schematic vertical cross-sectional views of a bridged electrode structure with a bright spot.
S1~S6...方法步驟S1~S6. . . Method step
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99134124A TWI427513B (en) | 2010-10-07 | 2010-10-07 | Construction Method and Structure of Bridge Erection with Shaded High Brightness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99134124A TWI427513B (en) | 2010-10-07 | 2010-10-07 | Construction Method and Structure of Bridge Erection with Shaded High Brightness |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201216131A TW201216131A (en) | 2012-04-16 |
TWI427513B true TWI427513B (en) | 2014-02-21 |
Family
ID=46787094
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW99134124A TWI427513B (en) | 2010-10-07 | 2010-10-07 | Construction Method and Structure of Bridge Erection with Shaded High Brightness |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI427513B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113760115A (en) * | 2020-06-05 | 2021-12-07 | 瀚宇彩晶股份有限公司 | Touch panel and manufacturing method thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200915151A (en) * | 2007-09-29 | 2009-04-01 | Au Optronics Corp | Touch panel and manufacturing method thereof |
TW201022762A (en) * | 2008-12-11 | 2010-06-16 | Au Optronics Corp | Color filter touch sensing substrate and display panel and manufacturing methods of the same |
JP2010170163A (en) * | 2009-01-20 | 2010-08-05 | Hitachi Displays Ltd | Display device |
TW201101160A (en) * | 2009-06-26 | 2011-01-01 | Ritdisplay Corp | Capacitor type touch panel |
-
2010
- 2010-10-07 TW TW99134124A patent/TWI427513B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200915151A (en) * | 2007-09-29 | 2009-04-01 | Au Optronics Corp | Touch panel and manufacturing method thereof |
TW201022762A (en) * | 2008-12-11 | 2010-06-16 | Au Optronics Corp | Color filter touch sensing substrate and display panel and manufacturing methods of the same |
JP2010170163A (en) * | 2009-01-20 | 2010-08-05 | Hitachi Displays Ltd | Display device |
TW201101160A (en) * | 2009-06-26 | 2011-01-01 | Ritdisplay Corp | Capacitor type touch panel |
Also Published As
Publication number | Publication date |
---|---|
TW201216131A (en) | 2012-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8653378B2 (en) | Structure of bridging electrode | |
CN105842904B (en) | Array substrate, display device and preparation method | |
CN107230661A (en) | A kind of array base palte and preparation method thereof, display device | |
WO2016197692A1 (en) | Array substrate, preparation method therefor and display apparatus | |
TW201310508A (en) | Touch panel and method of manufacturing touch panel | |
CN103123911B (en) | Pixel structure and manufacturing method thereof | |
JP2009128397A (en) | Liquid crystal display and method of manufacturing the same | |
KR20140108641A (en) | Oxide thin film transistor array substrate, manufacturing method thereof, and display panel | |
CN105575961A (en) | Display base plate and manufacturing method thereof, and display apparatus | |
KR101055379B1 (en) | Installing method of bridge type electrode and electrode structure of bridge type | |
JP2014235731A (en) | Touch panel and method for manufacturing the same | |
US8471151B2 (en) | Layout method for bridging electrode capable of shielding bright spot and structure of the bridging electrode | |
CN109002211B (en) | Touch screen, manufacturing method thereof, display panel and display device | |
TWI427513B (en) | Construction Method and Structure of Bridge Erection with Shaded High Brightness | |
KR100940569B1 (en) | Thin film transistor array panel | |
US10019089B2 (en) | Touch substrate, method for manufacturing the same, and touch display apparatus | |
TWI404474B (en) | Arrangement Method and Structure of Bridge Electrode | |
US9040858B2 (en) | Layout method and layout structure of touch panel electrode | |
CN115810636A (en) | Metal oxide thin film transistor array substrate, manufacturing method thereof and display panel | |
TWI417966B (en) | Method for manufacturing pixel structure | |
WO2017197915A1 (en) | Photolithography mask, manufacturing method thereof, and photolithography method | |
CN110634748B (en) | Preparation method of thin film transistor and thin film transistor | |
US8252151B2 (en) | Layout method of bridging electrode | |
CN113066803A (en) | Display panel manufacturing method, display panel and display panel to be cut | |
JP5683125B2 (en) | Electrode laying method and structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |