TWI427170B - Film forming method and thin film forming apparatus - Google Patents

Description

Film forming method and film forming device

The present invention relates to a film forming method and a film forming apparatus for processing a substrate such as glass, particularly for forming a specific film or a laminated film on a surface of a large-area substrate.

One of the film forming methods for forming a specific film on the surface of a substrate such as glass is a sputtering method in which ions in a plasma gas atmosphere are oriented in response to each other. The film is accelerated by a composition of a film on the surface of the substrate to be formed into a target of a specific shape, and is impacted to cause the target atoms to scatter toward the processing substrate, and a thin film is formed on the surface of the processing substrate. In recent years, such a sputtering apparatus has been used to form a specific film for a large-area processing substrate such as a glass substrate for FPD manufacturing.

As a processing substrate for a large area, a specific film is efficiently formed with a constant film thickness, and it is known that in a vacuum processing chamber, a plurality of targets are treated at equal intervals in the processing of the substrate. In a period in which a specific thin film is formed by sputtering on a target, and each target is integrated and processed in parallel with the substrate at a constant speed (for example, Patent Document) 1).

When a plurality of targets are arranged side by side at a certain interval, since the sputtering particles are not released from the regions between the targets, the film thickness distribution at the surface of the substrate is treated, or Membrane during reactive sputtering The mass distribution becomes like a wave (for example, in the case of a film thickness distribution, it is like a portion in which the film thickness is thicker and the thinner portion is repeated in the same cycle). Therefore, in the above-described general device, the unevenness of the film thickness distribution or the film distribution is improved by changing the respective regions of the sputtering particles by integrally moving the respective targets during sputtering. .

In addition, in the above-mentioned apparatus, there is also proposed a setting for forming a tunnel-shaped magnetic flux in front of each target (both sides of the sputtering) in order to further improve the uniformity of the film thickness distribution or the distribution of the film quality. The magnet assembly behind the target is reciprocated in parallel with the target and is reciprocated at a constant speed, thereby changing the position of the tunnel-shaped magnetic flux which increases the sputtering rate (Patent Document 1).

[Patent Document 1] Japanese Laid-Open Patent Publication No. 2004-346388 (for example, refer to the description of the patent application)

However, in sputtering, the target is subjected to the impact of ions and becomes a high temperature, and as a result, the target system is dissolved or broken. Therefore, in general, the target is bonded to a backing plate made of copper and having a refrigerant circulation path formed therein by a solder material made of a material having high thermal conductivity such as indium or tin. The plate is mounted on the cathode electrode in a state of being a target assembly. As a result, the weight of the target assembly becomes heavier.

Therefore, as in the prior art described above, when the targets arranged in parallel are used, that is, when a plurality of target assemblies are integrally reciprocated, the total weight of the target assembly becomes extremely large. Therefore, in order to smoothly reciprocate the target assemblies in the river at a constant speed and at equal intervals, it is a motor that requires high torque and high performance, and there is a problem that the cost is increased. Further, in the case of sputtering, if the target assembly or the magnet assembly is continuously moved, the plasma in front of the target may be shaken, and if the plasma is shaken, abnormal discharge (arc discharge) may be induced. There is a hindrance to the formation of good films.

Accordingly, the subject of the present invention is to provide a method in which a plurality of targets are arranged side by side at regular intervals in one or a plurality of processing chambers, and are coated by sputtering. When a specific film or a laminated film is formed, it is possible to suppress a film thickness distribution or a film distribution at a film on the surface of the substrate, and to form a film forming method and film formation which can form a good film. Device.

In order to solve the above problems, the method for forming a thin film according to the first aspect of the invention is characterized in that power is supplied to a plurality of targets which are disposed at equal intervals in the sputtering chamber and which are disposed at equal intervals with respect to the processing substrate. When a specific thin film is formed by sputtering, the substrate is moved at a constant interval in parallel with the targets arranged in parallel.

In this case, after the processing substrate is moved to a position facing the target arranged at equal intervals, the sputtering gas is introduced while introducing the sputtering gas. Power is applied to each target, and a plasma gas atmosphere is formed in the sputtering chamber, and ions in the plasma gas environment are accelerated and impacted toward the respective targets, and the target atoms are scattered toward the processing substrate to process the substrate. The surface forms a film. During the formation of the film (in sputtering), since the processing substrate is moved parallel to the respective targets and at a certain interval, the processing substrate can be covered with the sputtering of the target surface. The regions in which the particles are emitted are opposed to each other, and it is possible to suppress the occurrence of unevenness in the distribution of the film on the surface of the substrate or the distribution of the film at the time of reactive sputtering.

In the sputtering, since the targets arranged in parallel (that is, the target assembly after being joined to the backing plate) are in a stationary state, it is possible to prevent the occurrence of abnormal discharge due to the shaking of the plasma. And become a film that can form a good one. Moreover, since the weight of the processing substrate is moved compared to the plurality of target assemblies, there is no need for high precision and high torque as the target assembly is integrally reciprocated. Driving means such as a motor. In addition, in the in-line type sputtering apparatus in which the processing substrate is sequentially transported between the sputtering chambers arranged in parallel on the same line to form a laminated film, it is attached to each sputtering chamber. Since the substrate transfer means for transporting the substrate is provided at the position of the target, it is not necessary to separately provide another process for reciprocating the process substrate during the sputtering by using the transfer means to reciprocate the process substrate. The driving means can achieve a reduction in cost.

Further, if the processing substrate is continuously reciprocated at a constant speed, the surface of the processing substrate can be arranged in parallel during sputtering. It is desirable that the areas on which the sputtered particles of the respective target surfaces are discharged are slightly uniformly opposed.

When the processing substrate reaches the reciprocating position of the reciprocating movement, the reciprocating movement of the processing substrate is stopped for a specific time, and only depends on the type of the target, that is, in response to the scattering distribution according to the sputtering of each target. Further, the amount of the sputtered particles scattered toward the processing substrate can be appropriately set for the stop time of the processing substrate at each of the turning points, so that a slight wavy film thickness distribution or film quality can be generated on the film formed on the surface of the processing substrate. Distribution is a matter of suppression, but ideal.

When the reciprocating movement of the processing substrate is stopped for a predetermined period of time as described above, when the processing substrate moves from one of the folded positions to the other, the power input to the target can be stopped.

Further, the magnet assembly provided in a tunnel-shaped magnetic flux before the target is reciprocated at a constant speed parallel to the target, and the reciprocating movement of the processing substrate is stopped. During the time period, it is desirable to make the magnet assembly move back and forth at least once.

Moreover, in order to solve the above-mentioned problem, the film formation method of the sixth aspect of the patent application is to transfer the processing substrate between a plurality of sputtering chambers in which the same number of targets are arranged in parallel at equal intervals. Positioning each of the sputtering chambers opposite to each target, and inputting power to each target in the sputtering chamber in which the substrate is processed, and sputtering the targets to laminate the same on the surface of the processing substrate Or a film forming method of a different film, characterized in that: between the sputtering chambers in which the film is continuously formed, The stop position of the processing substrate is changed such that the regions facing the respective targets in the substrate surface are offset from each other in the substrate transport direction.

By this, in a sputtering chamber, the processing substrate is moved to a position opposite to each of the targets arranged at equal intervals, and power is applied to each target, and sputtering is performed. A film is formed on the surface of the substrate. In this state, since the sputtering particles are not released from the regions between the respective targets, the first film is a portion and a thin portion which are repeated after the film thickness is repeated in the same cycle. Not uniform. Next, the processed substrate on which the thin film is formed is transferred to another sputtering chamber, and electric power is applied to each target in another sputtering chamber, and another thin film is laminated by sputtering.

In the other sputtering chamber, since the region facing the respective targets in the surface of the processing substrate is offset in the substrate transport direction, the stop position of the processing substrate is determined, that is, for example, it will be formed. a film having a thick film has a thicker portion and a region opposite to the target, and the thinner portion is opposed to the sputtering surface of the target, and therefore, is slightly the same. When the film thickness is used to laminate another film, the thick portion of the film is exchanged with the thin portion, so that the film thickness as the laminated film is uniform throughout the processing substrate, and as a result, the film on the surface of the substrate can be prevented from being treated. The distribution of the film at the time of thick distribution or reactive sputtering produces a non-uniformity like a wave. When a thin film is formed in each sputtering chamber, since the target assembly system is in a stationary state, similar to the above, no abnormal discharge is induced, and good film formation can be performed.

In addition, in the above sputtering, if it is a plurality of the above-mentioned parallel arrangement Each pair of targets in the target target, alternating polarity is applied at a specific frequency to apply an alternating voltage, and each target is alternately switched to an anode electrode and a cathode electrode, and between the anode electrode and the cathode electrode Glow discharge is generated to form a plasma gas environment, and sputtering of each target can be achieved by suppressing the charge accumulated on the surface of the target by the opposite phase voltage. The discharge is complementary to the fact that abnormal discharge can be prevented, and a more favorable film formation can be performed.

Further, in order to solve the above problems, the thin film forming apparatus according to claim 8 is characterized in that it is provided with a plurality of sputtering chambers which are mutually insulated, and the same number and the same in each sputtering chamber. And a plurality of targets arranged in parallel at intervals; and a substrate transfer means for transporting the processed substrate to a position facing each target in each of the sputtering chambers is provided between each sputtering chamber in which the thin film is continuously formed The position determining means for determining the position of the processing substrate in each of the sputtering chambers is such that the regions facing the respective targets in the surface of the processing substrate are shifted from each other in the substrate conveying direction.

A mask plate having an opening facing the substrate may be provided between the substrate transfer means and the target in each of the sputtering chambers, and the opening of each mask may be continuously formed into a film. Between the sputtering chambers, a region facing the respective targets in the surface of the processing substrate is formed to be offset from each other in the substrate conveying direction, and a detection processing substrate is conveyed to the opening portion facing the mask plate. The position detection means of the position constitutes the aforementioned position determining means.

Further, each of the targets arranged in parallel is provided in each It is preferable that a magnet assembly of a tunnel-shaped magnetic flux is formed in front of the target, and a driving means for reciprocating the magnet assembly parallel to the target is provided.

As described above, in general, the film forming method and the film forming apparatus of the present invention are arranged in parallel at a certain interval in one or a plurality of processing chambers, and are formed by sputtering. When a specific film or a laminated film is formed, it is possible to suppress the occurrence of a wavy film thickness distribution or a film distribution on the film on the surface of the substrate, and further prevent the occurrence of abnormal discharge. Good film formation effect.

1 is a magnetron type sputtering apparatus (hereinafter referred to as "sputtering apparatus") of the present invention. The sputtering apparatus 1 is an inline type, and is provided with a vacuum processing chamber 11 capable of maintaining a specific degree of vacuum via a vacuum exhausting means (not shown) such as a rotary pump or a turbo molecular pump. . In the central portion of the vacuum processing chamber 11, a partition plate 12 is provided, and through the partition plate 12, two sputtering chambers 11a and 11b having a substantially equal volume separated from each other are partitioned. Above the vacuum processing chamber 11, a substrate transfer means 2 is provided. The substrate transporting means 2 is provided with a well-known structure. For example, the substrate transporting means 2 is provided with a carrier 21 for mounting the processing substrate S, and can be intermittently driven by a driving means (not shown). In the respective sputtering chambers 11a and 11b, the processing substrate S is sequentially transferred to a position facing the target, which will be described later.

In each of the sputtering chambers 11a and 11b, a mask plate 13 positioned between the substrate transfer means 2 and the target is attached. Each of the masks 13 is provided with openings 13a and 13b facing the processing substrate, and when the processing substrate S is transported to a position facing the target, which will be described later, and a specific thin film is formed by sputtering, The sputtering particles are prevented from adhering to the surface of the carrier 21 or the like. Further, a cathode electrode C having the same structure is disposed on the lower side of each of the sputtering chambers 11a and 11b.

The cathode electrode C is provided with eight targets 31a or 31h which are disposed to face the processing substrate S. Each of the targets 31a to 31h is formed by a known method by means of Al, Ti, Mo, ITO or the like in accordance with the composition of the film to be formed on the surface of the substrate S, and is, for example, a substantially rectangular parallelepiped. It is formed in the same shape (rectangular shape in plan view). Each of the targets 31a to 31h is bonded to the backing plate 32 for cooling the target 31a or 31h via a solder material such as indium or tin during sputtering, and is configured as a target assembly. . Each of the targets 31a to 31h is arranged side by side at equal intervals so that the sputtering surface 311 when not in use is positioned on the same plane parallel to the processing substrate S, and by the back side of the plate 32 (the side facing away from the sputtering surface 311, which is the lower side in Fig. 1) is attached to the support plate 33 extending in the direction in which the respective targets 31a or 31h are disposed.

On the support plate 33, a shielding plate 34 is provided which surrounds the periphery of the target 31a or 31h, respectively, and the shielding plate 34 is used during sputtering. Further, when the function as the anode is exerted, when the plasma is generated in front of the sputtering surface 311 of the target 31a or 31h, the plasma is prevented from being wound around the back side of the target 31a or 31h. The targets 31a to 31h are respectively connected to a DC power source (sputter power source) 35 provided outside the vacuum processing chamber 11, and a DC voltage of a specific value can be independently applied to each of the targets 31a to 31h.

Further, the cathode electrode C is provided with a magnet assembly 4 which is disposed at a position rearward of the target 31a or 31h (the direction opposite to the sputtering surface 311, which is lower in FIG. 1). Each of the magnet assemblies 4 having the same structure includes a support plate 41 provided in parallel with each of the targets 31a and 31h. When the target 31a or 31h is rectangular in front view, the support plate 41 is wider than the horizontal direction of each of the targets 31a or 31h, and is along the target 31a or 31h. It is composed of a rectangular flat plate formed in a manner extending in the longitudinal direction to both sides thereof, and is made of a magnetic material that amplifies the absorbing force of the magnet. In the support plate 41, the central magnet 42 arranged in a rod shape at the center portion thereof and the peripheral magnet 43 disposed along the outer periphery of the support plate 41 are changed in polarity on the side of the sputtering surface 311. Settings.

The volume converted from the central magnet 42 to the same magnetized volume is, for example, equal to the sum of the volume converted into the same magnetization by the peripheral magnet 43 (peripheral magnet: central magnet: central magnet = 1:2:1) Further, a tunnel-shaped magnetic flux of a phase-balanced closed loop is formed in front of the sputtering surface 311 of each of the targets 31a or 31h. By this, the electrons that are electrolyzed before each target 31a or even 31h are captured and passed through the sputtering station. The generated secondary electrons are used to increase the electron density in front of each target 31a or even 31h to increase the plasma density, thereby increasing the sputtering rate.

Each of the magnet assemblies 4 is connected to a drive shaft 51 of drive means 5a, 5b composed of a motor or an air cylinder, and is placed in two places along the direction in which the targets 31a or 31h are arranged. The positions are parallel and at the same speed as the integrated reciprocating movement. Thereby, the region where the sputtering rate becomes high is changed, and a comprehensive and uniform erosion region covering each of the targets 31a to 31h is obtained.

The vacuum processing chamber 11 is provided with gas introduction means 6a, 6b for introducing a sputtering gas made of a rare gas such as Ar into the sputtering chambers 11a, 11b. The gas introduction means 6a, 6b having the same structure include, for example, a gas pipe 61 attached to the side wall of the vacuum processing chamber 11, and the gas pipe 61 is connected to the gas source 63 via the mass flow controller 62. Further, when a specific thin film is formed on the surface of the processing substrate S by reactive sputtering, a reactive gas such as oxygen or nitrogen is introduced into the sputtering chambers 11a and 11b, respectively. Gas introduction means.

Then, the carrier 21 to which the processing substrate S is mounted is transported to the sputtering target chamber 11a in one of the sputtering chambers 11a by the substrate transfer means 2 (the position is opposed to the target 31a or 31h). The substrate S and the opening 13a of the mask plate 13 are in a position where they coincide with each other in the vertical direction. Next, when a sputtering gas (or a reaction gas) is introduced through the gas introduction means 5a under a specific pressure, and a negative DC voltage is applied to the target 31a or 31h via the DC power source 35, the substrate S is processed. And the target 31a or even 31h is formed with a vertical electric field, and The plasma gas environment is formed before the target 31a or even 31 h. Then, the ions in the plasma gas atmosphere are accelerated and impacted toward the respective targets 31a or 31h, and the sputtered particles (target atoms) are scattered toward the processing substrate S, and a thin film is formed on the surface of the processing substrate S. .

Next, the processed substrate S on which the thin film is formed is transferred to the other sputtering chamber 11b, and a negative DC voltage is applied to the target 31a or 31h via the DC power supply 35 in the same manner as described above, and sputtering is performed. Thereby, on the surface of the 1 film formed on the surface of the processing substrate S, other films of the same or different types are laminated.

However, in the sputtering apparatus 1, the sputtering particles are not released in the region R1 between the respective targets 31a and 31h. Therefore, as shown in FIG. 2, when a specific thin film is formed on the surface of the substrate S, the film thickness distribution is wavy, that is, the film thickness is thicker and the film thickness is repeated in the same cycle. This is a general unevenness of the thin portion, which is uneven, and if a specific film is laminated, it becomes more remarkable. In this case, for example, when a transparent electrode (ITO) is formed on a glass substrate and the liquid crystal is sealed to form an FPD, a problem such as display unevenness occurs on the display surface. Therefore, it is necessary to distribute the film thickness or The unevenness of the membrane distribution is improved.

In the present embodiment, the sputtering chambers 11a and 11b are disposed such that the region R1 between the respective targets 31a and 31h on the surface of the processing substrate S faces the substrate in the substrate transport direction. The stop position of the processing substrate S in each of the sputtering chambers 11a and 11b is changed in such a manner as to be offset from each other. That is, in one sputtering chamber 11a, the substrate will be processed S moves to a specific position opposed to the targets 31a or 31h which are arranged side by side at equal intervals, and forms a thin film by sputtering. In this state, the film of the first film is generally uneven in thickness and thin portion after the film thickness is repeated in the same cycle.

Next, when the processed substrate S on which the thin film is formed is moved to the position facing each of the targets 31a or 31h in the other sputtering chamber 11b, so as to be in contact with the respective targets 31a or 31h The position between the intervening regions R1 is shifted from the stop position of the processing substrate S to the position where the substrate S of the processing substrate S is displaced from each other. In other words, in the other sputtering chamber 11b, the portion of the processed substrate S on which the thin film is formed is thicker, and is opposed to the space 23 between the targets 31a and 31h, respectively. The thinner portion is opposed to the sputtering surface 311 of the target 31a or even 31h. By this, when a thin film is laminated with a slightly different film thickness, the film thickness is exchanged with the thinner portion so that the film thickness as the two-layer film becomes comprehensive in the processing substrate S. Slightly uniform, as a result, it is possible to prevent unevenness in the film thickness distribution on the surface of the substrate S or the film distribution at the time of reactive sputtering.

In order to form the above-mentioned film, in the present embodiment, the opening portion 13 of the mask sheet 13 in the sputtering chamber 11a and the opening portion 13a of the mask sheet 13 in the other sputtering chamber 11b are The substrate transport direction is formed to be offset from each other, and is used as a reference for determining the stop position of the processing substrate S that is transported to the respective sputtering chambers 11a and 11b at positions facing the targets 31a and 31h (refer to FIG. 3). ). However, in the vacuum processing chamber 11, When the carrier 21 is moved to move the processing substrate S to a position facing the respective openings 13a and 13b of the mask 13 (the processing substrate S and the opening 13a are aligned in the vertical direction), the detection is detected. The means M, for example, is provided with a position sensor 6 of a well-known structure to constitute a position determining means. Thereby, when the processing substrate S is sequentially transferred to the plurality of sputtering chambers 11a and 11b, each of the portions having a thick film thickness and a thin film portion can be exchanged for each sputtering. In the chambers 11a, 11b, the processing substrate is positionally determined with good precision.

Further, in the present embodiment, the processing substrate S is sequentially transported to the two sputtering chambers 11a and 11b to prevent the occurrence of a wave-like film thickness distribution or unevenness in film distribution, but it is not Limited to this. For example, when three sputtering chambers are provided and the processing substrate S is transferred to each sputtering chamber via the substrate transfer means 2 to form a three-layer film, it is only necessary to make the regions facing each other in the opposite direction. The place may be offset from each other in the three sputtering chambers, and the processing substrate may be stopped in each of the sputtering chambers.

For example, when the first and second thin films are formed in the three-layer film, the treatment in each sputtering chamber is performed so that the places facing the regions of the target are shifted from each other in the same manner as described above. The stop positions of the substrates are shifted from each other to form a film, and then, when the remaining third film is formed, the film thickness between the first and second films and the third film is adjusted to be close to 1:1. And forming a third film. Thereby, it is possible to prevent the film thickness distribution on the surface of the substrate S to be processed or the film-like distribution at the time of reactive sputtering from being undulated.

Further, in the present embodiment, the processing substrate is transferred to the complex Although the case where the film is formed in the sputtering chamber is described below, the present invention is not limited thereto, and as shown in FIG. 4, in the sputtering chamber 110, the driving means for the substrate conveying means 2 may be used. For control, the carrier 21 to be loaded with the processing substrate S is reciprocated parallel to the juxtaposed target 31a or 31h and at a certain interval and a specific speed (for example, 1 to 110 mm/s). The sputtering device 10 may be formed.

According to the above configuration, in the sputtering, since the processing substrate S is moved in parallel with the respective targets 31a to 31h and at regular intervals, the entire surface of the processing substrate S can be covered, and the target 31a can be covered. The area R1 on which the sputtered particles were discharged on the surface of 31 h was opposed. As a result, in the single sputtering chamber 110, it is possible to suppress a general unevenness in the wavy shape of the film thickness distribution on the surface of the substrate S or the reactive sputtering.

When the processing substrate S reaches the reciprocating positions P1 and P2 of the reciprocating movement, the driving means of the substrate conveying means 2 can be controlled to stop the processing substrate S for a specific time (for example, within 60 seconds). Therefore, it is only necessary to respond to the type of the target, that is, to the amount of the sputtered particles scattered toward the processing substrate according to the scattering distribution at the time of sputtering of each target, at each of the turning points P1 and P2. The stop time of the substrate to be processed is appropriately set, and it is possible to suppress the occurrence of a minute wavy film thickness distribution or film distribution on the film formed on the surface of the substrate S. In this case, it is preferable that the magnet assembly 4 is reciprocated at least once, and in order to improve the degree of control for suppressing the generation of the wavy film thickness distribution or the film quality distribution, when the substrate S is processed from one of them When the folding position 1 (or P2) moves toward the other P2 (or P1), the target 31a can also be stopped. The power is supplied to 31 h, and the film is formed only when the processing substrate S is stopped.

In the sputtering apparatuses 1 and 10 of any of the above configurations, since the target assemblies 31 and 32 are in a stationary state during sputtering, abnormal discharge due to shaking of the plasma can be prevented (arc The discharge is generated to form a good film. Further, since the processing substrate S having a light weight is moved compared to the plurality of targets 31 and 32, it is not necessary to integrally reciprocate the plurality of target assemblies 31 and 32. A driving method for a motor with high accuracy and high torque. In particular, in the in-line sputtering apparatus 1 of the present embodiment, when the substrate transfer means 2 is used to reciprocate the processing substrate S, it is not necessary to separately provide another driving for reciprocating the processing substrate S. Means, and can reduce costs, and ideal.

Further, in the present embodiment, the DC power source 35 is used as the sputtering power source. However, the present invention is not limited thereto, and two of the targets 31a to 31h which are arranged in parallel may be paired with each other. The pair of target 31a or 31h is connected to the output cable from the AC power source, and the pair of targets 31a to 31h are alternately changed in polarity and voltage is applied at a specific frequency (1 to 400 kHz). Thereby, each target 31a or 31h is alternately switched to an anode electrode and a cathode electrode, and a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma gas environment, and ions in the plasma gas environment are The target 31a or 31h which becomes one of the cathode electrodes is accelerated and impacted, and the target atoms are scattered, and adhered and deposited on the surface of the processing substrate S to form a specific thin film.

On the other hand, when the surface of the substrate S is processed by reactive sputtering In the case of a specific film, if the reactive gas system is introduced into the sputtering chambers 11a and 11b offset, unevenness may occur in the surface of the processing substrate S. Therefore, the magnets may be arranged in parallel. At the rear of the assembly 4, at least one gas pipe extending in the direction in which the targets 31a or 31h are arranged in parallel is provided, and one end of the gas pipe is connected to a gas of a reactive gas such as oxygen via a mass flow controller. The source is a gas introduction means for constituting a reactive gas.

Then, on the target side of the gas pipe, a plurality of injection ports having the same diameter and having a certain interval are opened, and a reactive gas is injected from the injection port formed at the gas pipe to make the reactive gas The space is once diffused in the space after each of the targets 31a or 31h, and is then supplied to the processing substrate S by the respective gaps between the targets 31a and 31h arranged in parallel.

[Example 1]

In the first embodiment, the sputtering apparatus 1 shown in Fig. 1 was used, and two layers of the Al film were laminated on the processing substrate by sputtering. As the target 31a or 31h in each of the sputtering chambers 11a and 11b, 99.99% of Al was used, and it was formed into a rectangular shape of 200 mm × 2300 mm × thickness 16 mm by a known method, and then joined to the back plate. 32 is placed on the support plate 33 at intervals of 270 mm. On the other hand, as the processing substrate, a glass substrate having a shape other than 1500 mm × 1350 mm was used. The distance between the target and the processing substrate was set to 160 mm.

As the sputtering condition, the sputtering chambers 11a, 11b to be evacuated by vacuum are used. The pressure inside was controlled at 0.5 Pa to control the mass flow controller, and Ar was introduced into the sputtering chambers 11a and 11b, respectively, and the temperature of the processing substrate S was set to 120 °C. Further, in the sputtering chamber 11a of the first embodiment, the processing of the substrate S is stopped so as to be concentric with the outer frame of the target placed in parallel, and in the other sputtering chamber 11b, the processing substrate is used. S stops at a position shifted by 135 mm in the processing substrate transport direction. Then, in each of the sputtering chambers 11a and 11b, 30 kW of electric power was applied to each target, and sputtering was performed for 50 seconds, and two layers of Al film were laminated on the surface of the substrate to have a film thickness of 150 nm. 300 nm Al film.

(Comparative Example 1)

As a comparative example 1, the sputtering apparatus 1 shown in Fig. 1 was used, and by the same conditions as in the first embodiment, two layers were laminated on the surface of the substrate to be treated with a film thickness of 150 nm to obtain Al of 300 nm. membrane. Further, in each of the sputtering chambers 11a and 11b, the substrate S is processed so as to be slightly concentric with the targets arranged in parallel.

As a result, in Comparative Example 1, the portion having a high resistance value and the low portion were repeatedly formed in the same cycle, and the film thickness distribution was ±12.3%. On the other hand, in the first embodiment, the amplitude of the wave-shaped film thickness distribution is suppressed to about half, and the film thickness distribution is ±6.6%, and it can be known that the wave shape on the surface of the substrate can be suppressed. The film thickness distribution or film distribution is generally uneven.

[Embodiment 2]

In the second embodiment, the sputtering apparatus 10 shown in FIG. 4 was used, and an Al film was formed on the processing substrate by sputtering. However, the number of the targets was 12 in parallel. Further, as each target, 99.99% of Al was used, and it was formed into a rectangular shape of 180 mm × 2650 mm × thickness 16 mm by a known method, and then joined to the back plate, and vacated at intervals of 202 mm. It is disposed on the support board 33. On the other hand, as the processing substrate, a glass substrate having a size other than 1950 mm × 2250 mm was used. The distance between the target and the processing substrate was set to 150 mm.

As the sputtering condition, the mass flow controller is controlled so that the pressure in the sputtering chamber 10 to be evacuated is kept at 0.3 Pa, and Ar is introduced into the sputtering chamber 10, and the substrate S is processed. The temperature was set to 120 ° C, and the input power to each target was set to 75 kW. When forming a film, first, the driving means of the substrate transfer means 2 is controlled, and the process substrate is moved to one of the folded-back positions, and in this state, the sputtering time is set to 40 seconds, and by sputtering The first Al film was formed by plating on the surface of the substrate to have a film thickness of 300 nm.

Next, the power input to the target is temporarily stopped, and then the substrate is transferred to the other folded position P2 by the substrate transfer means 2, and in this state, the sputtering time is set to 40 seconds. The second Al film was formed on the surface of the substrate by sputtering to have a film thickness of 300 nm, and an Al film having a film thickness of 600 nm in total was obtained (that is, a rewinding position at which the process substrate was stopped at the reciprocating movement of the substrate) At the same time, the power input to the target is performed only at each of the folding positions. Further, the interval between the folded-back positions was set to 100 mm.

5 is a distribution (membrane distribution) of the sheet resistance along the longitudinal direction of the Al film obtained in Example 2, and the same sputtering as described above at each of the folding positions P1 and P2. The graph showing the distribution of the sheet resistance values at the time of the Al film (300 nm) was obtained as a condition. In this case, when the Al film is formed at each of the folded-back positions, the portion having a high sheet resistance value and the low portion are repeatedly formed at the same cycle, and the sheet resistance value distribution is ±6.5%. On the other hand, in the second embodiment, when the film is formed, the position of the processing substrate with respect to the target placed in parallel is shifted in the substrate transfer direction (the direction in which the targets are arranged side by side), and the sheet resistance is changed. The distribution of the values was ±2.7%, and it was found that the wavy film thickness distribution or the film quality distribution on the surface of the substrate was generally uneven.

1‧‧‧Sputtering device

11a, 11b‧‧‧ Sputtering room

13‧‧‧Mask board

13a, 13b‧‧‧ openings

2‧‧‧Substrate transport means

21‧‧‧ Carrier

31a or even 31h‧‧ targets

35‧‧‧Sputter power supply

6a, 6b‧‧‧ gas introduction means

S‧‧‧Processing substrate

Fig. 1 is a view schematically showing a film forming apparatus of the present invention.

FIG. 2 is a view for explaining a film thickness distribution in a case where a plurality of targets are arranged in parallel and a thin film is formed by sputtering.

FIG. 3 is a view illustrating a mask plate.

Fig. 4 is a view schematically showing a modification of the thin film forming apparatus of the present invention.

Fig. 5 is a graph showing the distribution of the film quality in the surface of the substrate to be treated by the laminated film produced in Example 2.

1‧‧‧Sputtering device

2‧‧‧Substrate transport means

4‧‧‧Magnetic assembly

5a‧‧‧Drive means

5b‧‧‧Drive means

6a‧‧‧ gas introduction means

6b‧‧‧ gas introduction means

11‧‧‧vacuum processing room

11a‧‧‧ Sputtering room

11b‧‧‧ Sputtering room

12‧‧‧ District partition

13‧‧‧Mask board

13a‧‧‧ Openings

13b‧‧‧ openings

21‧‧‧ Carrier

31a~31h‧‧ Target

32‧‧‧ by board

33‧‧‧Support board

34‧‧‧shading board

35‧‧‧DC power supply

41‧‧‧Support board

42‧‧‧Central Magnet

43‧‧‧Surround magnets

51‧‧‧Drive shaft

61‧‧‧ gas pipe

62‧‧‧mass flow controller

63‧‧‧ gas source

C‧‧‧Cathode electrode

S‧‧‧Processing substrate

Claims (10)

A method for forming a thin film, which is characterized in that when a specific film is formed by sputtering on a plurality of targets which are disposed at equal intervals in a sputtering chamber and which are disposed at equal intervals in a sputtering chamber, The targets arranged in parallel are moved in parallel at a certain interval to process the substrate. The method for forming a thin film according to the first aspect of the invention, wherein the processed substrate is continuously reciprocated at a constant speed. The film forming method according to claim 2, wherein when the processing substrate reaches the reciprocating position of the reciprocating movement, the reciprocating movement of the processing substrate is stopped for a specific time. The film forming method according to claim 3, wherein when the processing substrate moves from one of the folded positions to the other, the power input to the target is stopped. The method for forming a thin film according to the third or fourth aspect of the invention, wherein the magnet assembly provided in the tunnel shape before the target is formed at a constant speed parallel to the target At the same time as the reciprocating movement, the magnet assembly is reciprocated at least once during the period in which the reciprocating movement of the processing substrate is stopped for a specific period of time. A method for forming a thin film by transferring a processing substrate to each of a plurality of sputtering chambers in which a plurality of targets are arranged at equal intervals a position in the sputtering chamber opposite to each target, and power is applied to each target in the sputtering chamber in which the substrate is processed, and each target is sputtered to laminate the same on the surface of the processing substrate or Is a method for forming a film of a different film, wherein the regions facing the respective targets in the surface of the substrate are offset from each other in the substrate transfer direction between the respective sputtering chambers in which the film is continuously formed The way to change the stop position of the processing substrate. The method for forming a thin film according to claim 1 or 6, wherein each of the plurality of target targets arranged in parallel is alternately changed in polarity at a specific frequency. The alternating voltage is used to alternately switch the respective targets into an anode electrode and a cathode electrode, and a glow discharge is generated between the anode electrode and the cathode electrode to form a plasma gas environment, and each target is sputtered. A thin film forming apparatus comprising: a plurality of sputtering chambers that are mutually insulated; and a plurality of targets that are arranged side by side in the same number and at the same interval in each sputtering chamber; and The substrate transfer means for transporting the processing substrate to a position facing each of the targets in each of the sputtering chambers is provided so as to face each of the targets on the surface of the substrate between the sputtering chambers in which the thin films are continuously formed. The position determining means for determining the position of the processing substrate is performed in each of the sputtering chambers so that the regions are shifted from each other in the substrate transfer direction. The film forming apparatus described in claim 8 of the patent application, The position determining means is formed by providing a mask plate between the substrate transfer means and the target and having an opening facing the substrate in each of the sputtering chambers. The opening of the mask is formed such that a region facing the respective targets in the surface of the processing substrate is displaced from each other in the substrate transfer direction between the sputtering chambers in which the thin film is continuously formed, and is provided with detection A detection means for transporting the processing substrate to a position facing the opening of the mask. The thin film forming apparatus according to the eighth aspect of the invention, wherein the magnet assembly in which a tunnel-shaped magnetic flux is formed in front of each target is provided behind the targets arranged in parallel, and There is a driving means for reciprocating the magnet assembly parallel to the target.