TWI416618B - A treatment gas supply means and a treatment gas supply method, and a gas treatment apparatus - Google Patents

Abstract

The invention relates to a treatment gas supplying mechanism, supplying method and gas treatment device, wherein the treatment gas supplying mechanism supplies treatment gas for making the treatment container at preset pressure in short time. The treatment gas supplying mechanism (3) comprises: a He gas supply resource (30) for supplying helium gas as treatment gas to a chamber (2) as treatment container of holding substrate; a treatment gas jar (33) for temporarily storing helium gas from the He gas supply resource (30); a treatment gas circulating parts (35) for supplying helium gas from the He gas supply resource (30) to the treatment gas jar (33) and supplying the helium gas from the treatment gas jar (33) to chamber (2), wherein the helium gas is temporarily stored in the treatment gas jar (33) from the He gas supply resource (30) through the treatment gas circulating parts (35) and supplied to the chamber (2) from the treatment gas jar (33).

Description

Process gas supply mechanism, process gas supply method, and gas treatment device

The present invention relates to a processing gas supply mechanism and a processing gas for supplying a processing gas into a processing container so as to impart a specific treatment to a target object such as a glass substrate for a flat panel display (FPD) housed in a processing container. A supply method and a gas treatment device having such a treatment gas supply mechanism.

In the process of the FPD, in order to apply a specific treatment such as etching or film formation to the glass substrate for the FPD belonging to the object to be processed, a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD film forming apparatus is used. The plasma processing apparatus generally uses a plasma of a processing gas generated by generating a high-frequency electric field while supplying a processing gas in a processing chamber in a state where the glass substrate is placed on a mounting table in the processing container. And deal with it.

The flow of the processing gas supplied to the processing chamber is usually connected to the processing gas supply source through one end, and the other end is connected to the piping of the processing container, and the flow rate adjustment mechanism is performed by the flow rate adjustment mechanism such as the mass flow controller (refer to Patent Document 1).

However, recently, with the increase in the size of the FPD, even a large glass substrate of more than 2 m has appeared, and as the processing container becomes larger, the supply of the processing gas to the processing container is started from the supply state of the conventional processing gas. When the pressure reaches the set pressure, it takes a long time and there is a problem that the throughput is lowered.

[Patent Document 1] JP-A-2002-313898

The present invention has been made in view of such circumstances, and an object of the present invention is to provide a processing gas supply mechanism and a processing gas supply method capable of supplying a processing gas which is a set pressure in a processing container in a short period of time, and to provide such a processing gas supply. A gas processing device of the mechanism, and a computer readable memory medium for storing a control program for performing the gas supply method.

In order to solve the above problems, a first aspect of the present invention provides a processing gas supply mechanism that supplies a processing gas to the processing container in a manner of imparting a specific treatment to the object to be processed in the processing container. Providing: a processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing a processing gas from the processing gas supply source; and a processing gas for supplying the processing gas supply source And the processing gas is supplied to the processing gas tank, and the processing gas in the processing gas tank is sent to the processing gas conveying member in the processing container, and the processing gas is temporarily stored in the processing gas tank from the processing gas supply source, The process gas tank is supplied into the above processing vessel.

Furthermore, a second aspect of the present invention provides a gas processing apparatus including: a processing container that accommodates a target object; and a processing gas supplied to the above a processing gas supply mechanism in the processing container; and an exhausting means for exhausting the inside of the processing container, in a state in which the object to be processed is stored in the processing container, exhausted by the exhaust means, and The processing gas supply means supplies the processing gas, and applies a specific treatment to the object to be processed, wherein the processing gas supply means includes: a processing gas supply source for supplying the processing gas to the processing container; a processing gas tank for storing a processing gas from the processing gas supply source; and a processing gas supplied from the processing gas supply source to the processing gas tank, and feeding the processing gas in the processing gas tank to the processing container In the processing gas transporting member, the processing gas is temporarily stored in the processing gas tank from the processing gas supply source, and is supplied from the processing gas tank to the processing chamber.

According to a second aspect of the present invention, the processing gas transporting member includes a first processing gas flow path connected to the processing gas supply source and the processing container, and is connected to the processing gas from the first processing gas flow path. In the second processing gas flow path of the tank, the processing gas supply means preferably supplies the processing gas from the processing gas supply source to the processing container.

In this case, the processing gas tanks are provided in a plurality of ways, and the second processing gas flow paths are provided in plurality corresponding to the number of the processing gas tanks, and each of the second processing gas flow paths individually has a processing gas to be sent therein. Preferably, the feeding flow path to the processing gas tank and the feeding flow path for sending the processing gas from the processing gas tank are provided, and at this time, a control unit for controlling the processing gas supply means is provided, and the control unit is Since the above One portion of the plurality of processing gas tanks is supplied to the processing container through the feeding flow path, and the processing gas is stored in the processing gas in the plurality of processing gas tanks through the feeding flow path. Part or all is better.

Alternatively, in this case, the second processing gas flow path individually has a feeding flow path for feeding the processing gas to the processing gas tank, and a feeding flow path for sending the processing gas from the processing gas tank, The processing gas supply source is provided to supply a plurality of different types of processing gases, and the first processing gas flow path is supplied to the respective processing gas supply sources in such a manner that the number of the processing gas supply sources is different from each other. In the source connection flow path, the feed flow path of the second processing gas flow path is preferably different from the respective supply source connection flow paths of the first process gas flow path, and in this case, the control gas supply is controlled In the control unit of the mechanism, the control unit supplies a processing gas composed of a specific type and ratio from the processing gas tank to the processing container through the delivery flow path, and then extracts one of the plurality of processing gas supply sources or All of the processing gas composed of the specific type and ratio is supplied to the processing container through the first processing gas flow path Since most of the above-described process while the gas supply source via said one part or all of the process into the flow passage by a ratio of the specific type and different types and / or ratios of the gas formed in the process gas reserving tank is preferred.

Alternatively, in this case, the processing gas tanks are provided in a plurality of ways, and the second processing gas flow paths are provided in plurality corresponding to the number of the processing gas tanks, and each of the second processing gas flow paths individually has a processing gas. a feeding flow path to be fed to the processing gas tank, and a sending flow path for sending the processing gas from the processing gas tank, wherein the processing gas supply source is provided to supply a plurality of different types of processing gases, and The first processing gas flow path is a supply source connecting flow path that is connected to the respective processing gas supply sources in accordance with a plurality of the processing gas supply sources, and the feeding flow path of each of the second processing gas flow paths It is preferable that the respective supply source connection flow paths are different from the first processing gas flow path, and at this time, a control unit that controls the processing gas supply mechanism is provided, and the control unit is one of the plurality of processing gas grooves. a processing gas composed of a specific type and ratio is supplied to the processing container through the delivery channel, and a part or all of the plurality of processing gas supply sources are supplied through the first processing gas flow path a processing gas composed of a specific type and ratio is supplied to the processing container, and at the same time, from one of the plurality of processing gas supply sources or It is preferable that all of the processing gas composed of the type and/or ratio different from the specific type and ratio described above is stored in the remaining portion or all of the plurality of processing gas tanks through the above-described feeding flow path.

Further, in this case, the first processing gas flow path has a storage flow path that is transported when the processing gas from the processing gas supply source is stored in the processing gas tank, and is supplied from the processing gas supply source. The supply flow path to be transported when the processing gas is supplied into the processing container may be used.

Further, in the second aspect of the present invention, the exhaust means includes a plurality of exhaust passages connected to the processing container, and the exhaust passage When the exhaust device for exhausting the inside of the processing container is connected to the processing gas conveying member and one of the plurality of exhaust paths, a bypass flow path is connected to form a processing gas in the processing gas conveying member. The exhaust passage is discharged through the exhaust passage, and the exhaust passage connecting the bypass passage is preferably opened on the upstream side of the connection portion with the bypass passage.

Further, in the second aspect of the present invention, the processing container further includes a plasma generating mechanism that generates a plasma of the processing gas supplied by the processing gas supply means, wherein the specific processing is using a processing gas. Plasma treatment of plasma is ideal.

According to a third aspect of the present invention, there is provided a method of supplying a processing gas, wherein a processing gas is supplied to the processing container in a manner of imparting a specific treatment to the object to be processed in the processing container, characterized in that: a processing gas supply source for supplying a processing gas to the processing container; a processing gas tank for temporarily storing a processing gas from the processing gas supply source; and a processing gas for supplying the processing gas from the processing gas supply source Processing the gas tank, and feeding the processing gas in the processing gas tank to the processing gas conveying member in the processing container, temporarily storing the processing gas from the processing gas supply source in the processing gas tank, and supplying the processing gas from the processing gas tank to The above treatment container is inside.

According to a third aspect of the present invention, a first processing gas flow path connected to the processing gas supply source and the processing container, and a second processing connected to the processing gas tank from a difference from the first processing gas flow path a gas flow path constituting the processing gas conveying member, and the processing gas is also from the above It is preferred that the chemical gas supply source is supplied to the processing container.

In this case, a plurality of the processing gas tanks are provided, and the second processing gas flow path is often provided corresponding to the number of the processing gas tanks, and the feeding flow path for feeding the processing gas to the processing gas tank is separately provided. And each of the second processing gas channels configured to send the processing gas from the processing gas tank to the processing gas, and the processing gas is supplied to the processing from a portion of the plurality of processing gas tanks through the feeding channel In the container, it is preferred that the processing gas is stored in the residual flow path of the plurality of processing gas grooves through the feed flow path.

Alternatively, in this case, the second processing gas flow path is formed by separately providing a feeding flow path for feeding the processing gas into the processing gas tank and a sending flow path for sending the processing gas from the processing gas tank. In order to supply a plurality of types of processing gases, a plurality of the processing gas supply sources are provided, and a supply source connecting flow path is connected to each of the processing gas supply sources in accordance with a plurality of the processing gas supply sources. The first processing gas flow path is configured such that the feeding flow path of the second processing gas flow path is branched from the respective supply source connecting flow paths of the first processing gas flow path, and the processing gas groove passes through the sending flow After the processing gas supplied from the specific type and ratio is supplied into the processing container, a part or all of the plurality of processing gas supply sources are formed by the specific type and ratio through the first processing gas flow path. Processing gas is supplied to the processing container, and at least one or all of the plurality of processing gas supply sources are The inlet passage so that the specific type of It is preferred that the processing gas composed of the different types and/or ratios is stored in the processing gas tank.

Or, in this case, a plurality of the processing gas tanks are provided, and the second processing gas flow path is provided in a plurality of ways corresponding to the number of the processing gas tanks, and the plurality of processing gas streams are separately supplied to the processing gas tank. a flow path and a delivery flow path for sending the processing gas from the processing gas tank to form the second processing gas flow path, and a plurality of processing gas supplies are supplied in a plurality of different types of processing gas, and the processing gas supply source is provided The first processing gas flow path is configured to be connected to the supply source connection flow path of each of the processing gas supply sources so that the number of the processing gas supply sources is different, and the feed flow of the second processing gas flow path is made The respective supply source connection flow paths from the first processing gas flow path are branched, and a processing gas composed of a specific type and ratio is supplied from the part of the plurality of processing gas grooves to the processing container through the delivery channel. And a part or all of the plurality of processing gas supply sources from the first processing gas flow path will be from the specific species And processing gas supplied to the processing container is supplied to the processing container, and a part or all of the plurality of processing gas supply sources are different from the specific type and ratio by the type and/or ratio of the specific type and ratio It is preferred that the constituent process gas is stored in the remaining portion or all of the plurality of process gas grooves.

Further, a fourth aspect of the present invention provides a computer readable memory medium, wherein a control program for operating on a computer is stored, wherein the control program is executed to execute the processing gas supply method. Computer controlled processing device.

According to the present invention, since the processing gas is temporarily stored in the processing gas tank from the processing gas supply source by the processing gas delivery member, and is supplied from the processing gas tank to the processing container, the processing chamber can be supplied in a short period of time to set the processing chamber to a set pressure. Process the gas. Therefore, it is possible to shorten the processing time of the object to be processed.

Hereinafter, embodiments of the present invention will be described with reference to the attached drawings.

Fig. 1 is a schematic cross-sectional view showing a plasma etching apparatus according to an embodiment of a gas processing apparatus according to the present invention.

The plasma etching apparatus 1 is configured as a capacitive coupling type parallel plate plasma etching apparatus that etches a glass substrate (hereinafter simply referred to as "substrate") G for an FPD belonging to a target object. A liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like are exemplified as the FPD. The plasma etching apparatus 1 is provided with a chamber 2 as a processing container for accommodating the substrate G, a processing gas supply mechanism 3 for supplying a processing gas into the chamber 2, and a venting means for exhausting the inside of the chamber 2. 4. A plasma generating mechanism 5 for generating a plasma of a processing gas supplied into the chamber 2 by the processing gas supply mechanism 3.

The chamber 2 is made of, for example, aluminum whose surface is treated with an alumite treatment (anodizing treatment), and forms a rectangular tube shape corresponding to the shape of the substrate G. in A carrier 20 serving as a mounting table on which the substrate G is placed is formed on the bottom wall in the chamber 2. The carrier 20 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and has a base material 20a made of a conductive material such as metal, and an insulating material made of an insulating material covering the edge of the base material 20a. The member 20b is provided to cover the bottom of the base material 20a and the insulating member 20b to support the insulating member 20c composed of an insulating material. A temperature adjustment mechanism including an electrostatic adsorption mechanism for adsorbing the substrate G placed thereon, a cooling means for adjusting a temperature of the substrate G to be placed, and the like is housed in the substrate 20a ( Either there is no schema).

When the loading/unloading port 21 for loading and unloading the substrate G is formed on the side wall of the chamber 2, and the gate valve 22 provided with the switch loading/unloading port 21 is opened, the substrate G is configured to be conveyed by a non-pattern. The mechanism is moved in and out to the inside and outside of the chamber 2.

In the bottom wall of the chamber 2 and the carrier 20, for example, a plurality of insertion holes 23 penetrating through the edge portions of the carrier 20 are formed at intervals. Each of the insertion holes 23 is a lifting pin 24 that supports and lowers the substrate G from below and can be inserted into the substrate mounting surface of the carrier 20 so as to be expandable and contractible. A flange portion 25 is formed at a lower portion of each of the lift pins 24, and one end portion (lower end portion) of the telescopic tube 26 that is disposed around the lift pin 24 is connected to each flange portion 25, and the other end portion of the bellows tube 26 is The upper end is connected to the bottom wall of the chamber 2. Accordingly, the bellows 26 expands and contracts following the lifting of the lift pins 24, and seals the gap between the insertion hole 23 and the lift pins 24.

The processing gas supplied from the processing gas supply mechanism 3, which will be described later, is discharged into the chamber 2 on the upper portion or the upper wall of the chamber 2, and is regarded as an upper portion. The shower head 27 that functions as an electrode is disposed to face the carrier 20. The shower head 27 is grounded to form a gas diffusion space 28 for diffusing the processing gas therein, and a plurality of discharge holes 29 for discharging the processing gas diffused in the gas diffusion space 28 are formed on the lower surface or on the surface facing the carrier 20.

The exhaust means 4 is provided with an exhaust pipe 41 as an exhaust passage connected to the bottom wall as a chamber 2, and is connected to the exhaust pipe 41, and exhausts the inside of the chamber 2 through the exhaust pipe 41. The exhaust device 42 and the pressure regulating valve 43 provided on the upstream side of the connection portion of the exhaust device 42 of the exhaust pipe 41 for adjusting the pressure in the chamber 2 are provided. The exhaust device 42 has a vacuum pump such as a turbo molecular pump, and accordingly, it is possible to evacuate the inside of the chamber 2 to a specific decompression environment. The exhaust pipe 41 is provided in a plurality of intervals in the circumferential direction of the chamber 2, and the exhaust device 42 and the pressure regulating valve 43 are provided in many cases corresponding to the respective exhaust pipes 41.

The plasma generating mechanism 5 includes a power supply line 51 for supplying high-frequency power to the base material 20a of the carrier 20, an integrator 52 connected to the power supply line 51, and a high-frequency power source 53. The high frequency power source 53 supplies high frequency power of, for example, 13.56 MHz to the carrier 20, whereby the carrier 20 functions as a lower electrode and forms a pair of parallel plate electrodes with the shower head 27. The carrier 20 and the shower head 27 form part of the plasma generating mechanism 5.

The processing gas supply mechanism 3 includes a processing gas supply source for supplying a processing gas such as He gas, HCl gas, and SF ₆ gas into the chamber 2, for example, a He gas supply source 30, an HCl gas supply source 31, and an SF ₆ gas supply. a source 32 for temporarily storing or filling a plurality of process gases from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32, for example, two process gas tanks 33, 34; 30. The processing gas of the HCl gas supply source 31 and the SF ₆ gas supply source 32 is supplied to the processing gas tanks 33, 34 and the chamber 2, and the processing gas stored in the processing gas tanks 33, 34 is sent to the chamber 2. The processing gas conveying member 35 composed of a pipe or the like. The process gas transport member 35 has a first process gas flow path 36 connected to the He gas supply source 30, the HCl gas supply source 31, the SF ₆ gas supply source 32, and the chamber 2, and corresponding to the two process gas tanks 33, Each of the 34 ways is branched by the first process gas flow path 36 and connected to the second process gas flow paths 37 and 38 of the process gas grooves 33 and 34.

The first processing gas flow path 36 has a mode corresponding to three processing gas supply sources (He gas supply source 30, HCl gas supply source 31, and SF ₆ gas supply source 32) on one side or upstream side. The supply source connection flow paths 36a, 36b, and 36c connected to the respective processing gas supply sources are connected to the upper surface of the shower head 27 so that the other end or the downstream end portion communicates with the gas diffusion space 28. The first process gas flow path 36 is provided with mass flow controllers 36d, 36e, and 36f and valves 36g, 36h, and 36i for adjusting the flow rate of the process gas in the supply source connection flow paths 36a, 36b, and 36c, respectively. Valves 36s and 36t are also provided in each of the branch portions of the process gas channels 37 and 38, for example, at one end and the other end.

Each of the second processing gas channels 37 and 38 is branched from the downstream side of the supply source connecting channels 36a, 36b, and 36c of the first processing body channel 36, and is connected to the shower head so as to communicate with the gas diffusion space 28. Above the 27, processing gas grooves 33, 34 are connected to the intermediate portion. Accordingly, the second process gas channels 37, 38 individually have feed channels 37a, 38a for feeding the process gas to the process gas tanks 33, 34, and the process gases are sent from the process gas tanks 33, 34. The flow paths 37b and 38b are sent out. Valves 37c and 38c and valves 37d and 38d are provided in the feed channels 37a and 38a and the feed channels 37b and 38b, respectively, and pressure gauges 33a and 34a for measuring the internal pressure are provided in the process gas tanks 33 and 34, respectively.

The processing gas conveying member 35, for example, one of the first processing gas flow path 36 and the plurality of exhaust pipes 41, for example, one bypass flow path 39 to which a pipe or the like is connected, processes the processing gas in the gas conveying member 35. The bypass flow path 39 can be discharged by the exhaust means 4. The bypass flow path 39 is connected between the pressure regulating valve 43 of the exhaust pipe 41 and the exhaust device 42. By closing the pressure regulating valve 43, the processing gas can be prevented from being discharged from the bypass flow path 39. The gas pipe 41 flows into the chamber 2.

Each component of the plasma etching apparatus 1 is controlled by a process controller 90 provided with a microprocessor (computer). The process controller 90 is connected to a keyboard that performs an input operation of a command for managing the plasma etching apparatus 1 by the engineering manager, or a display that displays a driving state of the plasma etching apparatus 1 and displays the display. The interface 91 and the memory unit 92 for storing a processing program such as a control program or processing condition data for realizing the processing performed by the plasma etching apparatus 1 by the control of the process controller 90. Then, the process controller 90 is executed by the arbitrary processing program from the memory unit 92 in response to an instruction from the user interface 91, etc., and the plasma etching apparatus 1 is executed under the control of the process controller 90. . Furthermore, the processing program may be utilized by, for example, a state of a computer-readable memory medium stored in a CD-ROM, a hard disk, a flash memory, or the like, or may be transmitted from another device via, for example, a dedicated return line. .

Further, more specifically, the valves 36g, 36h, 36i, 36s, 36t, 37c, 37d, 38c, 38d, 39a of the process gas supply mechanism 3 are connected to the unit controller 93 of the process controller 90 ( Control unit) and control structure. Then, in response to an instruction from the user interface 91 or the like, the process controller 90 calls an arbitrary processing program from the storage unit 92 to cause the unit controller 93 to control.

In the plasma etching apparatus 1 configured as described above, the inside of the chamber 2 is maintained at a specific degree of vacuum by the exhaust means 4, and firstly, the loading and unloading port 21 is opened by the gate valve 22, and the transport mechanism is not shown by the figure. When the substrate G is carried in from the loading/unloading port 21, the lift pins 24 are raised, and the lift pins 24 are supported by the transfer mechanism 24 from the transport mechanism. When the transport mechanism is retracted from the loading/unloading port 21 to the outside of the chamber 2, the loading/unloading port 21 is closed by the gate valve 22, and the lift pins 24 are lowered to sink onto the substrate mounting surface of the carrier 20, and the substrate is placed. G is placed on the carrier 20.

Next, the processing gas is supplied into the chamber 2 by the processing gas supply mechanism 3. Supply this the gases treated, open valve 37d discharged beforehand from the He gas supply source 30, HCl gas supply source 31 and the SF ₆ gas supply source 32 is filled in the processing gas tank He 33 is the gas, HCl gas and SF ₆ gas.

Since the inside of the chamber 2 is exhausted by the exhaust means 4, only the processing gas filled in the processing gas tank 33 is supplied, and the pressure in the chamber 2 is lowered over time. Therefore, when the processing gas filled in the processing gas tank 33 is supplied or the valves 36s, 36t, 36g, 36h, 36i are opened immediately after the supply, the flow rate adjustment is performed by the mass flow controllers 36d, 36e, 36f from the He gas supply source 30. He gas, HCl gas, and SF ₆ gas of the HCl gas supply source 31 and the SF ₆ gas supply source 32 are supplied to the chamber 2 while maintaining the chamber 2 at a set pressure by the pressure control valve 43, for example 23.3 Pa (0.175 Torr). Accordingly, the set pressure in the chamber 2 can be quickly maintained. Further, the first process gas flow path 36 connected to the He gas supply source 30, the HCl gas supply source 31, the SF ₆ gas supply source 32, and the chamber 2 is connected to each other from the first process gas flow path 36. Since the second processing gas channels 37 and 38 of the processing gas tanks 33 and 34 constitute the processing gas conveying member 35, He gas from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 can be used. The HCl gas and the SF ₆ gas are supplied to the chamber 2 through the first processing gas flow path 36 without passing through the processing gas grooves 33 and 34 belonging to the large space, whereby the pressure in the chamber 2 can be achieved. Keep it faster.

In this state, a DC voltage is applied to the electrostatic adsorption mechanism built in the carrier 20 to adsorb the substrate G to the carrier 20, and the temperature of the substrate G is adjusted by the temperature adjustment mechanism built in the carrier 20. Then, high-frequency power is applied from the high-frequency power source 53 to the carrier 20 via the integrator 52, so that a high-frequency electric field is generated between the carrier 20 as the lower electrode and the shower head 27 as the upper electrode, so that the chamber 2 is The processing gas inside is plasmad. The substrate G is subjected to an etching treatment by the plasma of the processing gas.

When the etching process is applied to the substrate G, the application of the high frequency power from the high frequency power source 53 is stopped. Then, the shutoff valves 36g, 36h, and 36i stop the supply of He gas, HCl gas, and SF ₆ gas from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32, and discharge the chamber by the exhaust means 4. The inside of the chamber 2 and the first process gas flow path 36 or the process gas in the process gas transfer member 35. Then, the substrate G is released by the electrostatic adsorption mechanism, and then the processing gas is supplied into the chamber 2, and the carrier 2 is applied to the carrier 2 at a set pressure of, for example, 26.7 Pa (0.2 Torr). The frequency power is used to plasma the processing gas, and the substrate G is subjected to a static elimination treatment. The supply of the process gas is performed by opening the valve 38d, and the He gas previously filled in the process gas tank 34 by the He gas supply source 30 is discharged, and the valves 36s, 36t, and 36g are opened to hold the chamber 2 therein. The method of setting the pressure is performed by adjusting the He gas from the He gas supply source 30 by the mass flow controller 36d and delivering it. Accordingly, the pressure in the chamber 2 can be instantaneously maintained at a set pressure or a set pressure, and the static elimination treatment of the substrate G can be quickly performed.

When the static elimination process of the substrate G is performed, the processing gas in the chamber 2 and the first process gas flow path 36 or the process gas transfer member 35 can be discharged by the exhaust means 4. Then, the gate valve 22 is opened and the carry-out port 21 is opened, and the lift pin 24 is raised to move the substrate G upward from the carrier 20. Thereafter, when the transport mechanism (not shown) enters the chamber 2 from the loading/unloading port 21, the lift pin 24 is lowered, and the substrate G is further moved to the transport mechanism. Thereafter, the substrate G is carried out from the loading/unloading port 21 to the outside of the chamber 2 by the transport mechanism.

The refilling of the processing gas in the processing gas tanks 33 and 34 is performed when the substrate G is carried in and out. First, the valve 37c is opened to fill the processing gas tank 33 with the processing gas. At this time, since the process gas is prevented from flowing into the process gas tank 34 and the chamber 2, the valves 37d, 38c, and 36s are closed. When the process gas is completed When filling into the processing gas tank 33, the valve 37c is closed, and the processing gas remaining in the first processing gas flow path 36 and the feeding flow paths 37a and 38a is discharged, so that the valve 39a is opened. At this time, the pressure regulating valve 43 of the exhaust pipe 41 connected to the bypass flow path 39 is closed so that the process gas does not flow into the chamber 2. When the discharge of the process gas is completed, the process gas is filled in the process gas tank 34 in the same manner as the process gas tank 33, and after the completion of the filling, the first process gas flow path 36 and the feed flow path 37a are similarly executed. The discharge of the process gas of 38a. Further, the filling of the processing gas may be performed even if the processing gas tank 34 is executed in advance.

In the present embodiment, the processing gas supply member 35 temporarily supplies processing gases such as He gas, HCl gas, and SF from the processing gas supply source, for example, the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32. ₆ gas is temporarily filled in the processing gas tanks 33, 34, and the processing gas filled in the processing gas tanks 33, 34 is supplied into the chamber 2 to perform plasma etching treatment including the substrate G, so that even if the chamber 2 has a large capacity In this case, the processing gas which becomes the set pressure in the chamber 2 can be supplied in a short time, and accordingly, the processing time can be shortened.

Further, in the present embodiment, the processing gas tank 33 is used to fill the processing gas supplied during the plasma etching process, and the processing gas tank 34 is used to fill the processing gas supplied after the plasma etching process. . In the present embodiment, the second processing gas flow paths 37 and 38 are designed to be different from the first processing gas flow path 36. However, even if the first processing gas is merged with each other at the one end portion, the first processing gas is designed to be branched. The flow path 36 may also be different. Alternatively, the second process gas flow paths 37 and 38 are not constructed. The upper surface of the shower head 27 is connected, but is connected to other portions of the chamber 2, such as side walls, and the processing gas may be supplied to the chamber 2 without passing through the shower head 27. In the present embodiment, the delivery channels 37b and 38b of the second process gas channels 37 and 38 are connected to the chamber 2, but these may be connected to the first process gas channel 36. Further, in the present embodiment, in order to continuously execute two processes using different process gases, two process gas grooves 33 and 34 are used. However, when there is only one type of process, etc., even if there is only one process gas tank, continuous When three or more processes are performed, it is also possible to use three or more process gas tanks.

Next, using the plasma etching apparatus 1, each measurement is performed to fill the processing gas to the processing gas tank 33 at a specific pressure (hereinafter, referred to as filling time), and the processing gas to be filled in the processing gas tank 33 and the processing gas supply source. The processing gas of 30, 31, and 32 is supplied into the chamber 2, and the pressure in the chamber 2 is set to a predetermined pressure level (hereinafter, referred to as a stabilization time). Here, as shown in Fig. 2, the plasma etching apparatus 1 uses a structure in which the second processing gas flow paths 37 and 38 of the processing gas supply mechanism 3 are simply formed. Each of the second processing gases 37 and 38 is branched from the first processing gas flow path 36, the other end is connected to the processing gas grooves 33 and 34, and the valves 37z and 38z are provided in the intermediate portion. Therefore, the second process gas flow paths 37, 38 here also serve to direct the process gases from the process gas supply sources 30, 31, 32 to the process gas channels 33, 34, and to process the gases. The process gases in the tanks 33, 34 are directed to the flow paths within the chamber 2.

The flow ratio of He gas, HCl gas and SF ₆ gas belonging to the processing gas is 2:1:1, the total flow rate is 5 slm, the capacity lo of the chamber 2 is 23101, and the capacity l ₁ of the processing gas tank 33 is 31, the cavity The set pressure P0 in the chamber 2 is 23.3 Pa (0.175 Torr), and when the pressure P ₁ of the processing gas filled in the processing gas tank 33 is 26.7 kPa (200 Torr) (Example 1), at 53.3 kPa (400 Torr) ( Example 2) Measurement was performed at 80.0 kPa (600 Torr) (Example 3). Further, as a comparative example, the measurement time when the processing gas from the processing gas supply sources 30, 31, and 32 was supplied into the chamber 2 without using the processing gas tank 33 was measured. The measurement results are shown in Table 1.

As shown in Table 1, it was confirmed that the stabilization time in Examples 1, 2, and 3 was shorter than that of the comparative example. That is, it is confirmed that the use of the plasma etching apparatus 1 can shorten the settling time compared to the conventional plasma etching apparatus which does not use the processing gas tank 33.

Further, it is confirmed that the filling time is shorter as the pressure of the processing gas filled in the processing gas tank 33 is lower, but the settling time is that the higher the pressure of the processing gas filled in the processing gas tank 33 is, the shorter the time is, the time is 80.0 kPa. At 26.7 kPa, it was almost half. This is because when the pressure of the processing gas filled in the processing gas tank 33 is low, the processing gas supplied from the processing gas supply sources 30, 31, 32 into the chamber 2 flows into the processing through the second processing gas flow path 37. The gas tank 33 is the reason. Therefore, as a result of measuring the pressure change in the processing gas delivery member 35 from the processing gas tank 33 before the supply of the processing gas into the chamber 2, the processing gas after the supply of the processing gas into the chamber 2 from the processing gas tank 33 is started. The pressure in the conveying member 35 is as shown by the arrow in Fig. 3(a), and when the pressure P ₁ of the processing gas filled in the processing gas tank 33 is 26.7 kPa, the processing gas is transported close to the timing. The pressure in the member 35 is 29.9 kPa (224 Torr). As indicated by the arrow portion in Fig. 3(b), the pressure P ₁ of the processing gas filled in the processing gas tank 33 is less than 29.9 kPa, for example, 17.9 kPa (135 Torr). At this time, the pressure in the processing gas conveying member 35 is smaller than that in the processing gas tank 33. As shown by the arrow portion in Fig. 3(c), the pressure P ₁ of the processing gas filled in the processing gas tank 33 is larger than 29.9 kPa. For example, at 53.3 kPa, the pressure in the processing gas delivery member 35 is larger than the timing. Further, when the pressure P ₁ of the processing gas filled in the processing gas tank 33 is 17.9 kPa, the holding time is about 2 seconds longer than when 26.7 kPa is used, that is, only the processing gas tank 33 is not used. The result of a long settling time when the process gas from the process gas supply sources 30, 31, 32 is supplied into the chamber 2 is long. Therefore, the second process gas flow path 37 (38) acts as a flow path for supplying the process gas into the process gas tank 33 (34), and a flow path for sending the process gas from the process gas tank 33 (34). When the pressure of the processing gas filled in the processing gas tank 33 is higher than the pressure in the processing gas conveying member 35, the processing gas can be prevented from flowing into the processing gas tanks 33 and 34, and if it is filled in the processing gas tank 33, the processing is performed. The higher the pressure of the gas, the shorter the settling time.

Next, another embodiment of the plasma etching apparatus will be described.

Fig. 4 is a schematic cross-sectional view showing a plasma etching apparatus according to another embodiment of the gas processing apparatus according to the present invention.

As shown in Fig. 4, the plasma etching apparatus 1' is a feeding flow path 37a, 38a and a bypass flow of the second processing gas flow paths 37, 38 of the processing gas supply means 3 in the deformed plasma etching apparatus 1. The same components as those of the plasma etching apparatus 1 are denoted by the same reference numerals, and description thereof will be omitted. The feed flow path 37a' (38a') of the second process gas flow path 37' (38') of the process gas supply means 3' in the plasma etching apparatus 1' is sent to the process gas tank 33 (34). The introduction branch flow paths 37i, 37j, 37k which are disposed on the upstream side from the mass flow controllers 36d, 36e, 36f of the supply source connection flow paths 36a, 36b, 36c from the one end portion or the upstream side end portion And it is sent to the flow path 37e, 37f, 37g (38e, 38f, 38g) by the divergence of the difference, and the other end or the downstream side of the flow path 37e, 37f, 37g (38e, 38f, 38g) The units merge with each other and are connected to the merged feed channel 37h (38h) of the process gas tank 33 (34). Mass flow controllers 37l, 37m, and 37n are provided in each of the introduction branch flow paths 37i, 37j, and 37k, and 37o, 37p, 37q, and 38o are provided in the branch feed channels 37e, 37f, 37g, 38e, 38f, and 38g, respectively. , 38p, 38q.

The bypass flow path 39' in the process gas supply means 3' is branched on one side or on the upstream side, and is connected to the merge feed channels 37h and 38h, respectively, and valves 39b and 39c are provided in the respective branch portions.

In the processing gas supply mechanism 3' configured as described above, the He gas, the HCl gas, and the SF ₆ gas may be supplied from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 via the first process gas delivery member. 35 is supplied into the chamber 2, and He gas, HCl gas, and SF ₆ gas are supplied from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 through the second process gas flow path 37'(38'). Filling into the process gas tank 33 (34), and by means of the mass flow controllers 36d, 36e, 36f, 37l, 37m, 37n and the valves 36g, 36h, 36i, 37o (38o), 37p (38p), 37q (38q), individual adjustment is supplied to the chamber, He gas flow rate, HCl gas flow rate, SF ₆ gas flow rate of 2, is sent to process gas (33) (34) of the He gas flow rate, HCl gas flow rate, SF ₆ gas flow. Further, by connecting the bypass flow paths 39' to each of the merged feed channels 37h and 38h, the process gas in the second process gas channel 37' including the merge feed channel 37h can be individually discharged. The processing gas contained in the second processing gas flow path 38' that is fed into the flow path 38h is included. Therefore, the processing gas composed of the specific type and ratio and the processing gas composed of the specific types and ratios from the processing gas supply sources 30, 31, 32, which are previously filled in the processing gas tank 33 (34), are supplied to the chamber. In the process 2, a process gas composed of a type and/or a ratio different from a specific type and ratio used in the next process is filled in the process gas tank 34 (33), so that it can be continuously used. Three or more processes in which the type or ratio of the processing gas is different.

In the present embodiment, the divergent flow channels 37e, 38e, 37f, 38f, 37g, and 38g are branched from the supply source connection flow paths 36a, 36b, and 36c by the introduction of the branch flow paths 37i, 37j, and 37k, but even The flow path 36a is directly connected from the supply source without passing through the introduction branch flow paths 37i, 37j, 37k. 36b, 36c can also be divided. At this time, the mass flow controllers may be provided in each of the branch feed channels 37e, 38e, 37f, 38f, 37g, and 38g.

Fig. 5 is a view showing a modification of the supply source connecting flow path provided in the processing gas supply mechanism 3 of the plasma etching apparatus 1.

In order to execute the self-processing gas supply sources 30, 31, 32 to fill the processing gas to the processing gas tanks 33, 34 in a short time, the processing gas is sent to the processing gas tanks 33, 34 at a large flow rate, and is disposed in the supply source connecting stream. The mass flow controllers and valves of the passages 36a, 36b, and 36c may be configured to correspond to a large flow rate. However, in order to improve the processing quality of the substrate G, it is necessary to finely adjust the flow rate of the processing gas supplied from the processing gas supply sources 30, 31, 32 into the chamber 2, and to provide corresponding flow in the supply source connecting flow paths 36a, 36b, 36c. In the case of a mass flow controller with a large flow rate, there is a possibility that the flow rate cannot be finely adjusted, and the processing quality of the substrate G is lowered. Here, as shown in Fig. 5, even in the supply source connection flow paths 36a, 36b, 36c, the process gases from the process gas supply sources 30, 31, 32 are stored or filled in the process gas tanks 33, 34. The storage flow paths 36j, 36k, and 36l that are transported at the time, and the supply flow paths 36m, 36n, and 36o that are transported when the process gases from the process gas supply sources 30, 31, and 32 are supplied into the chamber 2 are supplied. The mass flow controller 36p and the valve 36q each having a large flow rate corresponding to the storage flow paths 36j, 36k, and 36l are provided, and the supply flow paths 36m, 36n, and 36o are each set to be finely adjustable, for example, small. The mass flow controller 36r and the valve 36s for flow can also be used. With such a configuration, the processing gas can be filled in the processing gas tanks 33, 34 in a short time, and the flow rate of the processing gas supplied into the chamber 2 can be finely adjusted.

The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments, and various modifications can be made. The above embodiment is an example of a RIE type capacitive coupling type parallel plate plasma etching apparatus which is applied to apply high frequency power to the lower electrode. However, the present invention is not limited thereto, and may be applied to ashing or CVD film formation. Other plasma processing apparatuses may be applied to all gas apparatuses other than the plasma processing apparatus that treats the object to be processed, such as a substrate, in a processing container and gas-treats. In addition, although the above-described embodiment is an example of a process applied to a glass substrate for FPD, the present invention is not limited thereto, and may be applied to processing of all substrates such as a semiconductor substrate, or may be applied to a substrate other than the substrate. Processing of the processing body.

1, 1'‧‧‧ plasma etching device (gas processing device)

2‧‧‧Case (processing container)

3, 3' ‧ ‧ processing gas supply mechanism

4‧‧‧Exhaust means

5‧‧‧ Plasma generation agency

41‧‧‧Exhaust pipe (exhaust road)

42‧‧‧Exhaust device

30‧‧‧He gas supply source (process gas supply source)

31‧‧‧HCl gas supply source (process gas supply source)

32‧‧‧SF ₆ gas supply source

33, 34‧‧‧Processing gas tank

35‧‧‧Processing gas delivery components

36‧‧‧1st process gas flow path

36a, 36b, 36c‧‧‧ supply source connection flow path

36j, 36k, 36l‧‧‧reserved flow paths

36m, 36n, 36o‧‧‧ supply flow path

37, 37', 38, 38'‧‧‧ second treatment gas flow path

37a, 37a', 38a, 38a'‧‧‧ into the flow path

37b, 38b‧‧‧Send the flow path

39, 39'‧‧‧ bypass flow path

90‧‧‧Process Controller

91‧‧‧User interface

92‧‧‧Memory Department

93‧‧‧Unit controller (control department)

G‧‧‧Glass substrate (subject to be processed)

Fig. 1 is a schematic cross-sectional view showing a plasma etching apparatus according to an embodiment of a gas processing apparatus according to the present invention.

Fig. 2 is a schematic cross-sectional view showing a plasma etching apparatus used for measuring the filling time of the processing gas and the setting time of the processing gas supply.

Fig. 3 is a view showing measurement results of the filling time of the processing gas and the stabilization time when the processing gas is supplied.

Fig. 4 is a schematic cross-sectional view showing a plasma etching apparatus according to another embodiment of the gas processing apparatus according to the present invention.

Fig. 5 is a view showing a modification of the supply source connecting flow path provided in the processing gas supply means of the plasma etching apparatus.

1‧‧‧ Plasma etching device (gas processing device)

2‧‧‧Case (processing container)

3‧‧‧Processing gas supply mechanism

4‧‧‧Exhaust means

5‧‧‧ Plasma generation agency

20a‧‧‧Substrate

20b‧‧‧Insulating components

20c‧‧‧Insulating components

21‧‧‧ Move in and out

22‧‧‧ gate valve

23‧‧‧ inserted through hole

24‧‧‧lifting pin

25‧‧‧Front Department

26‧‧‧ Telescopic tube

27‧‧‧Sprinkler

28‧‧‧Diffusion space

29‧‧‧Spit hole

41‧‧‧Exhaust pipe (exhaust road)

42‧‧‧Exhaust device

43‧‧‧Pressure adjustment valve

30‧‧‧He gas supply source (process gas supply source)

31‧‧‧HCl gas supply source (process gas supply source)

32‧‧‧SF ₆ gas supply source

33, 34‧‧‧Processing gas tank

35‧‧‧Processing gas delivery components

36‧‧‧1st process gas flow path

36a, 36b, 36c‧‧‧ supply source connection flow path

36d, 36e, 36f‧‧‧ mass flow controllers

36g, 36h, 36i‧‧‧ valves

37, 38‧‧‧2nd treatment body flow path

37a, 38a‧‧‧Send into the stream

37b, 38b‧‧‧Send the flow path

52‧‧‧ Integrator

53‧‧‧High frequency power supply

39‧‧‧ bypass flow path

90‧‧‧Process Controller

91‧‧‧User interface

92‧‧‧Memory Department

93‧‧‧Unit controller (control department)

G‧‧‧Glass substrate (subject to be processed)

20‧‧‧Carrier

51‧‧‧Power supply line

34a‧‧‧ pressure gauge

36s, 36t, 37c, 38c, 37d, 38d, 39a‧ ‧ valves

Claims (14)

A processing gas supply mechanism that supplies a processing gas to a processing chamber to be processed in a processing container, wherein the processing gas supply mechanism is characterized in that: a processing gas is provided a processing gas supply source supplied to the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; and a processing gas supplied from the processing gas supply source to the processing gas tank And supplying the processing gas in the processing gas tank to the processing gas conveying member in the processing container, wherein the processing gas is temporarily stored in the processing gas tank from the processing gas supply source, and is supplied from the processing gas tank to the processing gas tank In the processing container, the processing gas transporting member has a first processing gas channel connected to the processing gas supply source and the processing container, and a second processing unit connected to the gas channel from the first processing gas channel Processing the gas flow path, setting a plurality of the above processing gas grooves, and corresponding to the above processing a plurality of the second processing gas channels are provided in the plurality of body grooves, and the plurality of the second processing gas channels are provided, and the feeding channels for feeding the processing gas to the processing gas grooves are individually provided, and Sending a flow path of the processing gas from the processing gas tank, A plurality of the processing gas supply sources are provided to supply different types of processing gases, and the first processing gas flow paths are branched into a plurality of products corresponding to the number of the processing gas supply sources and connected to the respective processing gas supply sources. In the source connection flow path, the feed flow path in which the plurality of the second process gas flow paths are provided is branched from the respective supply source connection flow paths of the first process gas flow path, and is divided into plural numbers. A valve is provided in each of the supply source connection flow path and the feed flow path. A gas processing apparatus comprising: a processing container that accommodates a target object; a processing gas supply mechanism that supplies a processing gas to the processing container; and an exhausting means that exhausts the inside of the processing container, and accommodates the exhausting means in the processing container In the state of the object to be processed, the exhaust gas is exhausted by the exhaust means, and the processing gas is supplied from the processing gas supply means to apply a specific process to the object to be processed. The gas processing means is characterized in that the process gas is The supply mechanism includes: a processing gas supply source for supplying the processing gas into the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; and processing from the processing gas supply source The gas is supplied to the processing gas tank, and the processing gas in the processing gas tank is sent to the processing gas conveying member in the processing container. The processing gas is temporarily stored in the processing gas tank from the processing gas supply source, and is supplied from the processing gas tank to the processing chamber, and the processing gas conveying member is connected to the processing gas supply source and the processing container. a first processing gas flow path; and a second processing gas flow path connected to the gas flow chamber from the first processing gas flow path; a plurality of the processing gas grooves are provided, and are provided corresponding to the number of the processing gas grooves a plurality of the second processing gas channels, wherein the plurality of the second processing gas channels are provided, and each of the plurality of processing gas channels is provided with a feeding channel for feeding the processing gas to the processing gas tank, and for using the processing gas tank a plurality of processing gas supply sources are supplied to supply a plurality of processing gases, and the plurality of processing gas supply channels are provided in a plurality of types corresponding to the number of the processing gas supply sources, and are connected to the plurality of processing gas supply channels. a supply source connection flow path of each processing gas supply source, and a plurality of the second processing gas flow paths are provided The feed flow path is branched from the downstream side of each of the supply source connection flow paths of the first process gas flow path, and a valve is provided in each of the supply source connection flow path and the feed flow path which are divided into plural numbers. The gas processing device according to claim 2, wherein the processing gas supply mechanism is also supplied from the processing gas supply source The process gas is passed to the above processing vessel. The gas processing apparatus according to claim 3, further comprising: a control unit that controls the processing gas supply unit, wherein the control unit supplies the processing gas from a portion of the plurality of processing gas grooves through the delivery flow path The processing gas is simultaneously stored in the processing gas supply source from the processing gas supply source through the feeding flow path and stored in a part or all of the residual of the plurality of processing gas grooves. The gas processing apparatus according to claim 3, further comprising: a control unit that controls the processing gas supply unit, wherein the control unit passes the processing gas composed of the specific type and ratio from the processing gas tank to the processing flow After being supplied to the processing container, the processing gas composed of the specific type and ratio is supplied to the processing container from a part or all of the plurality of processing gas supply sources through the first processing gas flow path. At the same time, a processing gas composed of a type and/or a ratio different from the specific type and ratio described above is stored in the processing gas tank from a part or all of the plurality of processing gas supply sources through the feeding flow path. . The gas processing apparatus according to claim 3, further comprising: a control unit that controls the processing gas supply unit, wherein the control unit is configured to process gas having a specific type and ratio from one of the plurality of processing gas grooves The portion is supplied to the flow path through the above In the processing container, the processing gas composed of the specific type and ratio is supplied to the processing container from a part or all of the plurality of processing gas supply sources through the first processing gas flow path. a processing gas composed of a type and/or a ratio different from the specific type and ratio described above is partially or wholly stored in the remaining portion of the plurality of processing gas tanks from one or both of the plurality of processing gas supply sources Share or all. The gas processing apparatus according to any one of claims 2 to 6, wherein the exhaust means has a plurality of exhaust passages connected to the processing container, and the processing chamber is disposed through the exhaust passage An exhaust device for exhausting, wherein a bypass flow path is connected to one of the processing gas delivery member and the plurality of exhaust passages, and the processing gas constituting the processing gas delivery member can be borrowed through the bypass flow path The exhaust gas is discharged by the exhaust means, and the upstream side of the connection portion of the bypass flow path is opened and closed. The gas processing apparatus according to any one of claims 2 to 6, wherein the processing container further includes plasma generation for generating a plasma of a processing gas supplied by the processing gas supply means. Mechanism, the specific treatment described above is plasma treatment using a plasma of a process gas. A processing gas supply method for supplying the processing container to a treatment object to be processed in a processing container a processing gas, the processing gas supply method characterized by: preparing a processing gas supply source for supplying a processing gas into the processing container; and a processing gas tank for temporarily storing a processing gas from the processing gas supply source; And supplying the processing gas from the processing gas supply source to the processing gas tank, and supplying the processing gas in the processing gas tank to the processing gas conveying member in the processing container, and being connected to the processing gas supply source and The first processing gas flow path of the processing container and the second processing gas flow path connected to the processing gas groove from the first processing gas flow path constitute the processing gas conveying structure, and a plurality of the processing gas grooves are provided. And a plurality of the second processing gas channels are provided corresponding to the number of the processing gas tanks, and have a feeding channel for feeding the processing gas to the processing gas tank, and for processing the processing gas from the processing The method of sending out the flow path by the gas tank constitutes a plurality of the above-mentioned respective second processing gas flow paths a plurality of the processing gas supply sources are provided to supply different types of processing gases, and are connected to the supply source connection flow paths of the respective processing gas supply sources by having a plurality of different amounts corresponding to the processing gas supply sources. a method of forming the first processing gas flow path and feeding the plurality of second processing gas flow paths The flow path is branched from the downstream side of each of the supply source connection flow paths of the first processing gas flow path, and a valve is provided in each of the supply source connection flow path and the feed flow path which are divided into plural numbers, and the processing gas is supplied from the above. The processing gas supply source is temporarily stored in the processing gas tank, and is supplied from the processing gas tank to the processing chamber. The processing gas supply method according to claim 9, wherein the processing gas is supplied from the processing gas supply source to the processing container. The processing gas supply method according to claim 10, wherein the processing gas is supplied from the portion of the plurality of processing gas grooves to the processing container through the feeding channel, and the processing gas is supplied from the processing gas The supply source is stored in the residual flow path and stored in a portion or all of the residual of the plurality of processing gas grooves. The processing gas supply method according to claim 10, wherein the processing gas composed of the specific type and ratio is supplied from the processing gas tank to the processing container through the feeding channel, and then the specific type is And a processing gas formed by the ratio and a part of the plurality of processing gas supply sources are supplied to the processing container through the first processing gas flow path, and the type and ratio different from the specific type and ratio are Or the processing gas composed of the ratio is supplied from the above plurality of processing gases A part or all of the source is stored in the processing gas tank through the above-mentioned feeding flow path. The processing gas supply method according to claim 10, wherein the processing gas composed of the specific type and ratio is supplied from the portion of the plurality of processing gas grooves to the processing container through the delivery channel, and And a processing gas composed of the specific type and ratio is supplied from one or all of the plurality of processing gas supply sources to the processing container through the first processing gas flow path, and the specific type and ratio are The processing gas composed of different types and/or ratios is stored in part or all of the plurality of processing gas supply sources from the plurality of processing gas supply sources in the remaining portion or all of the plurality of processing gas grooves. A computer readable memory medium having a control program for operating on a computer, wherein the control program is executed to perform a processing gas supply as recited in any one of claims 9 to 13 of the patent application. The method of the method allows the computer to control the processing device.