TWI408746B - Method of fabricating patterned substrate - Google Patents

Abstract

The invention provides a method for manufacturing graphical substrates, which comprises the steps of (a) providing a substrate with an upper surface; (b) depositing a metal layer on the upper surface of the substrate; (c) increasing the temperature so as to aggregate a plurality of metal particles on the upper surface; (d) introducing reaction gas so as to react the plurality of metal particles with the reaction gas and form a patterned structure on the upper surface. The invention manufactures sapphire substrates in a grow-up manner. Compared with the prior etching manner, the complicated steps are avoided and only the fundamental equipment is required.

Description

Method for manufacturing patterned substrate

The present invention relates to a method of fabricating a patterned substrate, and more particularly to a method of fabricating a patterned substrate without an etching process.

With the rapid development of technology, in recent years, Light-Emmiting Diode (LED) has become more and more popular because of its low power consumption, long component life, no need for warm-up time, fast response, and small size. The more widely used it is in various situations.

The light-emitting diode is usually disposed on a sapphire substrate having a patterned surface to enhance its luminous efficiency. However, in the prior art, the sapphire substrate system must be subjected to a dry etching process or a wet etching process to form a patterned surface on the sapphire substrate, and the sapphire substrate must be protected by metal, oxide or nitride during the etching process, and the etching process. After the end, the sapphire substrate needs to be cleaned, and the yellow light process is limited, and only a micron-sized patterned sapphire substrate can be produced. This process is not only cumbersome and time consuming, but must also be accompanied by expensive machine equipment, resulting in high manufacturing costs.

The reason is that the present inventors have felt the above-mentioned problems, and have devoted themselves to research and cooperated with the application of the theory, and finally proposed a present invention which is rational in design and effective in improving the above-mentioned defects.

The invention provides a method for manufacturing a patterned substrate, comprising the steps of: (a) providing a substrate having an upper surface; (b) raising the temperature to 600-900 ° C and introducing trimethyl-aluminum (Trimethyl-aluminum, TMAL) to form an aluminum layer on the upper surface of the substrate; (c) maintaining the temperature at 600-900 ° C until the aluminum layer is aggregated into a plurality of aluminum particles distributed on the upper surface while the upper surface of the substrate is not aluminum The particles are covered and exposed; and (d) the reaction gas is introduced to combine a plurality of aluminum particles with the reaction gas to form a patterned structure on the upper surface.

The invention provides a method for manufacturing another patterned substrate, comprising the steps of: (a) providing a substrate having an upper surface; (b) plating a metal layer on the upper surface of the substrate; (c) raising the temperature to the metal The layers are aggregated into irregular pattern metal particles distributed on the upper surface while partially exposing a portion of the upper surface of the substrate without being covered by the metal particles; and (d) introducing a reaction gas to combine the irregular pattern metal particles with the reaction gas A patterned structure is formed on the upper surface.

The invention has the following beneficial effects: the invention uses the growing method to manufacture the sapphire substrate, and the sapphire substrate is etched in a conventional manner, which can save a lot of cumbersome steps and only need to use the most basic machine equipment, ie A nanoscale patterned structure can be fabricated on the sapphire substrate.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

Referring to FIG. 1 to FIG. 3, in order to implement the method for manufacturing the patterned substrate 1 according to the present invention, the cross-sectional view (1) to (3) of the substrate 1 and the method for manufacturing the patterned substrate 1 include the following steps: Providing a substrate 1 having an upper surface 10; (b) depositing an aluminum layer 2 on the upper surface 10 of the substrate 1 (c) raising the temperature to cause the aluminum layer 2 to aggregate to form a plurality of aluminum particles distributed on the upper surface 10; d) introducing a reaction gas to combine a plurality of aluminum particles with the reaction gas to form a patterned structure on the upper surface 10. The details are further described below.

Referring to FIG. 4, firstly, step (a) is performed to provide a substrate 1 having an upper surface 10; in the step (a), the substrate 1 is usually a sapphire substrate for providing a light-emitting diode, thereby making the light-emitting diode The body can provide good luminous efficiency, and the substrate 1 is not limited to the use of a sapphire substrate. After step (a), step (b) is performed. In the step (b), the overall temperature is raised to 600-900 ° C, and trimethyl-aluminum (TMAL) is introduced to form an aluminum layer 2 on the upper surface 10 of the substrate 1; b) The detailed formation steps of the middle aluminum layer 2 are as follows: (b1) raising the temperature to 600-900 ° C; (b2) introducing trimethyl-aluminum (TMAL) 10 at a rate of 1 to 200 ml/min. ~120 seconds, to form the aluminum layer 2 on the upper surface 10 of the substrate 1. After step (b), step (c) is performed to stop the introduction of trimethylaluminum, and the temperature is maintained at 600-900 ° C until the aluminum layer 2 is aggregated into a plurality of aluminum particles 3, distributed on the upper surface 10, and maintained at a temperature of 1~ 120 seconds to form aluminum particles 3 of 100 nm to 200 nm. Finally, step (d) is carried out to introduce a reaction gas, and a plurality of aluminum particles 3 are combined with the reaction gas to form a patterned structure on the upper surface 10. Wherein, the reaction gas is usually oxygen, ammonia or nitrogen, but is not limited to oxygen, ammonia and nitrogen, and the detailed steps in step (d) are as follows: (d1) holding temperature 600~900 °C; and (d2) access Oxygen is 10 to 1800 seconds, and a plurality of aluminum particles 3 are combined with a reaction gas to form polycrystalline alumina on the upper surface 10 of the substrate 1. If the single crystal alumina is to be formed, after step (c), the detailed steps of step (d) can be changed to: (d1') temperature rise to 1100~1300 °C; and (d2') oxygen supply 10~18 () 0 seconds, the plurality of aluminum particles 3 are combined with a reaction gas to form single crystal alumina on the upper surface 10 of the substrate 1; or, if a single crystal aluminum nitride is to be formed, the following steps may be followed in the step (c) Execution: (d1") holding temperature 600~900 °C; and (d2") introducing ammonia gas for 10~1800 seconds, combining a plurality of aluminum particles 3 with a reaction gas to form single crystal aluminum nitride on the upper surface 10 of the substrate 1 .

Referring to FIG. 5 to FIG. 7 , in order to implement another method for manufacturing a patterned substrate according to the present invention, the cross-sectional views (1) to (3) of the substrate 1 are sequentially performed. Referring to FIG. 8, the method for manufacturing the patterned substrate of the present invention comprises the following steps: (a) providing a substrate 1 having an upper surface 10; and in the step (a), the substrate 1 is usually a sapphire substrate, The light-emitting diode can achieve good luminous efficiency, but is not limited to a sapphire substrate. Next, step (b) is performed to plate the metal layer 5 on the upper surface 10 of the substrate 1; the plating or plating may be used, which may be selected by the manufacturer. After the step (b), the step (c) is performed to raise the temperature so that the metal layer 5 is formed as the irregular pattern metal particles 6 and distributed on the upper surface 10; and the detailed formation step of the irregular pattern metal layer 5 in the step (c) As follows, (c1) raising the temperature to between 200 and 900 ° C; and (c2) maintaining the temperature of 200 to 900 ° C for 1 to 400 minutes, so that the metal layer 5 is formed as irregular pattern metal particles 6 and distributed on the upper surface. 10. At the same time, a part of the upper surface of the substrate is not covered by the metal particles 6, and the height and size of the metal particles 6 are close to the thickness of the metal layer 5. Then, step (d) is carried out to pass a reaction gas, and the irregular pattern metal particles 6 are combined with the reaction gas to form a patterned structure on the upper surface 10. The time required is related to the size of the metal particles 6, and the metal particles 6 are required to be larger. The longer the time. The metal layer 5 is preferably an aluminum layer, and the reaction gas may be oxygen or nitrogen, and the aluminum layer is combined with oxygen or nitrogen to form aluminum oxide or aluminum nitride, but is not limited herein. In the step (d), the detailed formation steps of the single crystal alumina are as follows: (d1) raising the temperature to 1100 to 1300 ° C; and (d2) introducing oxygen for 1 to 1440 minutes to cause the irregular pattern metal layer 5 and the reaction The gas combines to form a single crystal alumina on the upper surface 10 of the substrate.

After preparing a patterned substrate, the substrate can be placed in an epitaxial machine for epitaxy. The most widely used epitaxial machine is Metal-organic Chemical Vapor Deposition (MOCVD). The epitaxial machine. In summary, the method for fabricating the patterned substrate of the present invention replaces the conventional etching process by the technique of crystal growth, and improves the manufacturing method of the conventional complicated patterned substrate, and can omit additional etching equipment such as inductive coupling. Devices such as Inductive Coupling Plasma (ICP), wet etching, and yellow light are not required, and can be completed only by using an epitaxial machine. Since the above-described etching apparatus is no longer required in the method of manufacturing the patterned substrate of the present invention, the time for removing the etching raw material and the transportation between the different apparatuses can be saved. Furthermore, since the method of manufacturing the patterned substrate of the present invention is a technique of crystal growth, the pattern size is up to the nanometer level.

The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the invention, and the equivalents of the present invention and the equivalents of the drawings are all included in the present invention. Within the scope of protection, it is given to Chen Ming.

1. . . Substrate

10. . . Upper surface

2. . . Aluminum layer

3. . . Aluminum

4. . . Graphical structure

5. . . Metal layer

6. . . Metal grain

Figure 1 is a cross-sectional view (1) of a patterned substrate of a manufacturing method according to a first embodiment of the present invention;

Figure 2 is a cross-sectional view (2) of the patterned substrate of the manufacturing method of the first embodiment of the present invention;

Figure 3 is a cross-sectional view (3) of the patterned substrate of the manufacturing method of the first embodiment of the present invention;

4 is a flow chart showing a method of manufacturing a patterned substrate according to a first embodiment of the present invention.

Figure 5 is a cross-sectional view (1) of the patterned substrate of the manufacturing method of the second embodiment of the present invention;

Figure 6 is a cross-sectional view (2) of the patterned substrate of the manufacturing method of the second embodiment of the present invention;

Figure 7 is a cross-sectional view (3) of the patterned substrate of the manufacturing method of the second embodiment of the present invention;

Fig. 8 is a flow chart showing a method of manufacturing a patterned substrate according to a second embodiment of the present invention.

1. . . Substrate

10. . . Upper surface

4. . . Graphical structure

Claims (10)

A method of fabricating a patterned substrate comprising the steps of: (a) providing a substrate having an upper surface; (b) depositing a metal layer on the upper surface of the substrate; (c) raising the temperature to cause the The metal layers are aggregated to form a plurality of metal particles distributed on the upper surface while a portion of the upper surface of the substrate is not exposed by the plurality of metal particles; and (d) a reactive gas is introduced to cause the plurality of The metal particles are combined with the reaction gas to form a patterned structure on the upper surface. A method of manufacturing a patterned substrate, comprising the steps of: (a) providing a substrate having an upper surface; (b) raising the temperature to 600-900 ° C and introducing trimethyl-aluminum (TMAL) And forming an aluminum layer on the upper surface of the substrate; (c) stopping the passage of the trimethylaluminum and maintaining the temperature at 600-900 ° C until the aluminum layer is aggregated into a plurality of aluminum particles, distributed thereon And (d) introducing a reactive gas to combine the plurality of aluminum particles with the reactive gas to form a patterned structure on the upper surface. The manufacturing method according to claim 2, wherein the substrate is a sapphire substrate, the reaction gas is oxygen, ammonia or nitrogen, and the step (b) comprises the step of: (b1) raising the temperature to 600 ~900 ° C; and (b2) Trimethyl-aluminum (TMAL) is introduced at a rate of 1 to 200 ml/min for 10 to 120 seconds to form the aluminum layer on the upper surface of the substrate. The manufacturing method according to claim 3, wherein the step (d) comprises the steps of: (d1) holding a temperature of 600 to 900 ° C; and (d2) introducing oxygen for 1 to 120 seconds to make the plurality of Aluminum particles are combined with the reaction gas to form polycrystalline alumina on the upper surface of the substrate. The manufacturing method of claim 3, wherein the step (d) comprises the steps of: (d1') raising the temperature to 1100 to 1300 ° C; and (d2') introducing oxygen for 10 to 1800 seconds to cause the A plurality of aluminum particles are combined with the reaction gas to form single crystal alumina on the upper surface of the substrate. The manufacturing method according to claim 3, wherein the step (d) comprises the steps of: (d1") holding a temperature of 600 to 900 ° C; and (d2") introducing ammonia or nitrogen for 10 to 1800 seconds, The plurality of aluminum particles are combined with the reaction gas to form a single crystal aluminum nitride on the upper surface of the substrate. A method of fabricating a patterned substrate, comprising the steps of: (a) providing a substrate having an upper surface; (b) plating a metal layer on the upper surface of the substrate; and (c) raising a temperature to cause And forming a patterned metal layer on the upper surface; The manufacturing method according to claim 7, wherein the substrate is a sapphire substrate, the metal layer is an aluminum layer, and the reaction gas is oxygen, ammonia or nitrogen. The manufacturing method according to claim 8, wherein the step (c) comprises the steps of: (c1) raising the temperature to between 200 and 900 ° C; and (c2) maintaining the temperature of 200 to 900 ° C. 400 minutes so that the metal layer is formed as irregular pattern metal particles distributed on the upper surface. The manufacturing method according to claim 9, wherein the step (d) comprises the steps of: (d1) raising the temperature to 1100 to 1300 ° C; and (d2) introducing oxygen for 1 to 1440 minutes to make the irregularity A patterned metal layer is combined with the reactive gas to form single crystal alumina on the upper surface of the substrate.