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TWI405046B - 評估模型之方法，檢查裝置及微影裝置 - Google Patents

評估模型之方法，檢查裝置及微影裝置 Download PDF

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TWI405046B
TWI405046B TW098111401A TW98111401A TWI405046B TW I405046 B TWI405046 B TW I405046B TW 098111401 A TW098111401 A TW 098111401A TW 98111401 A TW98111401 A TW 98111401A TW I405046 B TWI405046 B TW I405046B
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radiation
substrate
value
characteristic
detector
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TW200947148A (en
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Boef Arie Jeffrey Den
Hugo Augustinus Joseph Cramer
De Kerkhof Marcus Adrianus Van
Henricus Petrus Maria Pellemans
Martin Ebert
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Asml Netherlands Bv
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    • G01N21/88—Investigating the presence of flaws or contamination
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    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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    • G01N21/88—Investigating the presence of flaws or contamination
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    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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Description

評估模型之方法，檢查裝置及微影裝置
本發明係關於可用於(例如)藉由微影技術來製造器件之檢查方法，且係關於使用微影技術來製造器件之方法。
微影裝置為將所要圖案施加至基板上(通常施加至基板之目標部分上)的機器。微影裝置可用於(例如)積體電路(IC)之製造中。在該情況下，圖案化器件(其或者被稱作光罩或主光罩)可用以產生待形成於IC之個別層上的電路圖案。可將此圖案轉印至基板(例如，矽晶圓)上之目標部分(例如，包括晶粒之一部分、一個晶粒或若干晶粒)上。圖案之轉印通常係經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上。一般而言，單一基板將含有經順次圖案化之鄰近目標部分的網路。已知微影裝置包括：所謂的步進器，其中藉由一次性將整個圖案曝光至目標部分上來照射每一目標部分；及所謂的掃描器，其中藉由在給定方向(「掃描」方向)上經由輻射光束而掃描圖案同時平行或反平行於此方向而同步地掃描基板來照射每一目標部分。亦有可能藉由將圖案壓印至基板上而將圖案自圖案化器件轉印至基板。
為了監控微影過程，需要量測經圖案化基板之參數，例如，形成於基板中或基板上之順次層之間的疊對誤差。存在用於進行微影過程中所形成之顯微結構之量測的各種技術，包括掃描電子顯微鏡及各種專門工具之使用。一專門檢查工具形式為散射計，其中將輻射光束引導至基板之表面上之目標上，且量測經散射光束或經反射光束之性質。藉由比較光束在其已由基板反射或散射之前與之後的性質，可判定基板之性質。此可(例如)藉由比較經反射光束與儲存於與已知基板性質相關聯之已知量測庫中的資料而進行。已知兩種主要類型之散射計。分光散射計將寬頻帶輻射光束引導至基板上，且量測經散射至特定窄角範圍中之輻射的光譜(作為波長之函數的強度)。角解析散射計使用單色輻射光束且量測經散射輻射之作為角度之函數的強度。
散射量測使用基板之模型來量測特徵(例如，特徵之側壁角度)。然而，若基板之模型不精確，則在經量測特徵中將出現較大誤差。此可(例如)在存在尚未包括於模型中之線邊緣粗糙度的情況下出現。
需要提供評估用於散射量測中之模型之精確度的方法。
根據本發明之一態樣，提供一種用於評估基板之特徵之模型的方法及裝置，方法包括：使用具有已知特性之輻射而採取基板之第一散射量測；使用散射量測而判定基板之特徵之特性的值，輻射具有第一特性值；使用具有第二特性值之輻射而採取第二散射量測；使用第二散射量測而判定特徵之特性的第二值；及比較特徵之特性的第一值與第二值以判定模型之精確度。
根據本發明之另一態樣，提供一種檢查裝置及一種微影裝置，其包括：輻射投影儀，輻射投影儀經組態以將輻射投影至基板上，輻射具有一具有複數個值之特性；高數值孔徑透鏡；及偵測器，偵測器經組態以偵測自基板之表面所反射的輻射光束；其中偵測器經組態以將經偵測輻射分離成複數個分部，每一分部之輻射針對特性具有不同值。
根據本發明之另一態樣，提供一種檢查裝置及一種微影裝置，其包括成像傅立葉變換光譜計。
現將參看隨附示意性圖式而僅藉由實例來描述本發明之實施例，在該等圖式中，對應參考符號指示對應部分。
圖1示意性地描繪微影裝置。裝置包括：照明系統(照明器)IL，其經組態以調節輻射光束B(例如，UV輻射或DUV輻射)；圖案化器件支撐件或支撐結構(例如，光罩台)MT，其經建構以支撐圖案化器件(例如，光罩)MA且連接至經組態以根據某些參數來精確地定位圖案化器件之第一定位器PM；基板台(例如，晶圓台)WT，其經建構以固持基板(例如，塗覆抗蝕劑之晶圓)W且連接至經組態以根據某些參數來精確地定位基板之第二定位器PW；及投影系統(例如，折射投影透鏡系統)PL，其經組態以將由圖案化器件MA賦予至輻射光束B之圖案投影至基板W之目標部分C(例如，包括一或多個晶粒)上。
照明系統可包括用於引導、成形或控制輻射之各種類型的光學組件，諸如，折射、反射、磁性、電磁、靜電或其他類型之光學組件，或其任何組合。
圖案化器件支撐件或支撐結構以視圖案化器件之定向、微影裝置之設計及其他條件(諸如，圖案化器件是否固持於真空環境中)而定的方式來固持圖案化器件。圖案化器件支撐件可使用機械、真空、靜電或其他夾持技術來固持圖案化器件。支撐結構可為(例如)框架或台，其可根據需要而為固定或可移動的。圖案化器件支撐件可確保圖案化器件(例如)相對於投影系統而處於所要位置。可認為本文對術語「主光罩」或「光罩」之任何使用均與更通用之術語「圖案化器件」同義。
本文所使用之術語「圖案化器件」應被廣泛地解釋為指代可用以在輻射光束之橫截面中向輻射光束賦予圖案以便在基板之目標部分中形成圖案的任何器件。應注意，例如，若被賦予至輻射光束之圖案包括相移特徵或所謂的輔助特徵，則圖案可能不會精確地對應於基板之目標部分中的所要圖案。通常，被賦予至輻射光束之圖案將對應於目標部分中所形成之器件(諸如，積體電路)中的特定功能層。
圖案化器件可為透射或反射的。圖案化器件之實例包括光罩、可程式化鏡面陣列，及可程式化LCD面板。光罩在微影術中為熟知的，且包括諸如二元交變相移及衰減相移之光罩類型，以及各種混合光罩類型。可程式化鏡面陣列之一實例使用小鏡面之矩陣配置，該等小鏡面中之每一者可個別地傾斜，以便在不同方向上反射入射輻射光束。傾斜鏡面將圖案賦予於由鏡面矩陣所反射之輻射光束中。
本文所使用之術語「投影系統」應被廣泛地解釋為涵蓋任何類型之投影系統，包括折射、反射、反射折射、磁性、電磁及靜電光學系統或其任何組合，其適合於所使用之曝光輻射，或適合於諸如浸沒液體之使用或真空之使用的其他因素。可認為本文對術語「投影透鏡」之任何使用均與更通用之術語「投影系統」同義。
如此處所描繪，裝置為透射類型(例如，使用透射光罩)。或者，裝置可為反射類型(例如，使用如以上所提及之類型的可程式化鏡面陣列，或使用反射光罩)。
微影裝置可為具有兩個(雙平台)或兩個以上基板台(及/或兩個或兩個以上光罩台)的類型。在該等「多平台」機器中，可並行地使用額外台，或可在一或多個台上進行預備步驟，同時將一或多個其他台用於曝光。
微影裝置亦可為如下類型：其中基板之至少一部分可由具有相對較高折射率之液體(例如，水)覆蓋，以便填充投影系統與基板之間的空間。亦可將浸沒液體施加至微影裝置中之其他空間，例如，光罩與投影系統之間。浸沒技術在此項技術中被熟知用於增加投影系統之數值孔徑。如本文所使用之術語「浸沒」不意謂諸如基板之結構必須浸漬於液體中，而是僅意謂液體在曝光期間位於投影系統與基板之間。
參看圖1，照明器IL自輻射源SO接收輻射光束。舉例而言，當輻射源為準分子雷射時，輻射源與微影裝置可為單獨實體。在該等情況下，不認為輻射源形成微影裝置之一部分，且輻射光束借助於包括(例如)適當引導鏡面及/或光束放大器之光束傳送系統BD而自輻射源SO傳遞至照明器IL。在其他情況下，例如，當輻射源為汞燈時，輻射源可為微影裝置之整體部分。輻射源SO及照明器IL連同光束傳送系統BD(在需要時)可被稱作輻射系統。
照明器IL可包括用於調整輻射光束之角強度分布的調整器AD。通常，可調整照明器之光瞳平面中之強度分布的至少外部徑向範圍及/或內部徑向範圍(通常分別被稱作σ外部及σ內部)。此外，照明器IL可包括各種其他組件，諸如，積光器IN及聚光器CO。照明器可用以調節輻射光束，以在其橫截面中具有所要均一性及強度分布。
輻射光束B入射於被固持於圖案化器件支撐件(例如，光罩台)MT上之圖案化器件(例如，光罩)MA上，且由圖案化器件圖案化。在橫穿圖案化器件(例如，光罩)MA後，輻射光束B穿過投影系統PL，投影系統PL將光束聚焦至基板W之目標部分C上。借助於第二定位器PW及位置感測器IF(例如，干涉量測器件、線性編碼器、2-D編碼器或電容性感測器)，基板台WT可精確地移動，例如，以便在輻射光束B之路徑中定位不同目標部分C。類似地，第一定位器PM及另一位置感測器(其未在圖1中被明確地描繪)可用以(例如)在自光罩庫之機械擷取之後或在掃描期間相對於輻射光束B之路徑來精確地定位圖案化器件(例如，光罩)MA。一般而言，可借助於形成第一定位器PM之一部分的長衝程模組(粗略定位)及短衝程模組(精細定位)來實現圖案化器件支撐件(例如，光罩台)MT之移動。類似地，可使用形成第二定位器PW之一部分的長衝程模組及短衝程模組來實現基板台WT之移動。在步進器(與掃描器相對)之情況下，圖案化器件支撐件(例如，光罩台)MT可僅連接至短衝程致動器，或可為固定的。可使用光罩對準標記M1、M2及基板對準標記P1、P2來對準圖案化器件(例如，光罩)MA及基板W。儘管如所說明之基板對準標記佔用專用目標部分，但其可位於目標部分之間的空間中(此等被稱為切割道對準標記)。類似地，在一個以上晶粒提供於光罩MA上之情形中，光罩對準標記可位於該等晶粒之間。
所描繪裝置可用於以下模式中之至少一者中：
1.在步進模式中，在將被賦予至輻射光束之整個圖案一次性投影至目標部分C上時，使圖案化器件支撐件(例如，光罩台)MT及基板台WT保持基本上靜止(亦即，單重靜態曝光)。接著，使基板台WT在X及/或Y方向上移位，使得可曝光不同目標部分C。在步進模式中，曝光場之最大尺寸限制單重靜態曝光中所成像之目標部分C的尺寸。
2.在掃描模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，同步地掃描圖案化器件支撐件(例如，光罩台)MT及基板台WT(亦即，單重動態曝光)。可藉由投影系統PL之放大率(縮小率)及影像反轉特性來判定基板台WT相對於圖案化器件支撐件(例如，光罩台)MT之速度及方向。在掃描模式中，曝光場之最大尺寸限制單重動態曝光中之目標部分的寬度(在非掃描方向上)，而掃描運動之長度判定目標部分之高度(在掃描方向上)。
3.在另一模式中，在將被賦予至輻射光束之圖案投影至目標部分C上時，使圖案化器件支撐件(例如，光罩台)MT保持基本上靜止，從而固持可程式化圖案化器件，且移動或掃描基板台WT。在此模式中，通常使用脈衝式輻射源，且在基板台WT之每一移動之後或在掃描期間的順次輻射脈衝之間根據需要而更新可程式化圖案化器件。此操作模式可易於應用於利用可程式化圖案化器件(諸如，如以上所提及之類型的可程式化鏡面陣列)之無光罩微影術。
亦可使用對以上所描述之使用模式之組合及/或變化或完全不同的使用模式。
如圖2所示，微影裝置LA形成微影單元LC(有時亦被稱作微影單元或叢集)之一部分，其亦包括用以對基板執行預曝光及後曝光過程之裝置。通常，此等裝置包括用以沈積抗蝕劑層之旋塗器SC、用以顯影經曝光抗蝕劑之顯影器DE、冷卻板CH，及烘焙板BK。基板處置器或機器人RO自輸入/輸出埠I/O1、I/O2拾取基板、在不同處理裝置之間移動基板，且接著將基板傳送至微影裝置之裝載盤LB。通常被共同地稱作軌道之此等器件係在軌道控制單元TCU的控制下，軌道控制單元TCU自身係由監督控制系統SCS控制，監督控制系統SCS亦經由微影控制單元LACU而控制微影裝置。因此，不同裝置可經操作以最大化產出率及處理效率。
為了正確且一致地曝光由微影裝置所曝光之基板，需要檢查經曝光基板以量測性質，諸如，後續層之間的疊對誤差、線厚度、臨界尺寸(CD)，等等。若偵測到誤差，則可對後續基板之曝光進行調整，尤其係在檢查可足夠迅速且快速地進行以使得同一分批之其他基板仍待曝光的情況下。又，已經曝光之基板可經剝離及重做(以改良良率)或廢除，藉此避免對已知為有缺陷之基板執行曝光。在基板之僅某些目標部分為有缺陷之情況下，可僅對為良好之彼等目標部分執行另外曝光。
使用檢查裝置以判定基板之性質，且特別為判定不同基板或同一基板之不同層的性質如何在層與層之間變化。檢查裝置可整合至微影裝置LA或微影單元LC中或可為單獨器件。為了致使能夠最快速之量測，需要使檢查裝置在曝光之後立即量測經曝光抗蝕劑層中之性質。然而，抗蝕劑中之潛影具有極低對比度(在抗蝕劑之已曝光至輻射之部分與抗蝕劑之尚未曝光至輻射之部分之間僅存在極小的折射率差)且並非所有檢查裝置均具有對進行潛影之有用量測的充分敏感性。因此，可在後曝光烘焙步驟(PEB)之後採取量測，後曝光烘焙步驟(PEB)通常為對經曝光基板所進行之第一步驟且其增加抗蝕劑之經曝光部分與未經曝光部分之間的對比度。在此階段，抗蝕劑中之影像可被稱作半潛伏的。亦有可能進行經顯影抗蝕劑影像之量測-此時，抗蝕劑之經曝光部分或未經曝光部分已被移除-或在圖案轉印步驟(諸如，蝕刻)之後進行經顯影抗蝕劑影像之量測。後者可能性限制重做有缺陷基板之可能性，但仍可提供有用資訊。
圖3描繪可用於本發明之一實施例中的散射計SM1。散射計SM1包括寬頻帶(白光)輻射投影儀2，其將輻射投影至基板W上。經反射輻射傳遞至光譜計偵測器4，其量測鏡面經反射輻射之光譜10(作為波長(λ)之函數的強度(I))。自此資料，可藉由處理單元PU來重新建構引起經偵測光譜之結構或剖面，例如，藉由嚴密耦合波分析及非線性回歸或藉由與如圖3之底部處所示之模擬光譜庫比較。一般而言，對於重新建構，結構之通用形式為已知的，且根據對製造結構所採用之過程的認識來假定某些參數，從而僅留下結構之少許參數以自散射量測資料加以判定。該散射計可經組態為正入射散射計或斜入射散射計。
圖4中展示可用於本發明之一實施例的另一散射計SM2。在此器件中，由輻射源2所發射之輻射係使用透鏡系統12經由干涉濾波器13及偏振器17而聚焦、由部分反射表面16反射且經由顯微鏡接物鏡15而聚焦至基板W上，顯微鏡接物鏡15具有高數值孔徑(NA)，較佳地為至少0.9且更佳地為至少0.95。浸沒散射計可甚至具有數值孔徑超過1之透鏡。經反射輻射接著透過部分反射表面16而進入偵測器18，以便偵測散射光譜。偵測器可位於處於透鏡系統15之焦距的背部投影式光瞳平面11中，然而，光瞳平面可代替地藉由輔助光學器件(未圖示)而再成像至偵測器上。光瞳平面為輻射之徑向位置界定入射角且角位界定輻射之方位角的平面。偵測器較佳地為二維偵測器，使得可量測基板目標30之二維角散射光譜。偵測器18可為(例如)CCD或CMOS感測器陣列，且可使用為(例如)每訊框40毫秒之積分時間。
舉例而言，通常使用參考光束以量測入射輻射之強度。為了進行此過程，當輻射光束入射於光束分光器16上時，輻射光束之一部分透過光束分光器而作為朝向參考鏡面14之參考光束。參考光束接著投影至同一偵測器18之不同部分上。
干涉濾波器13之集合可用以選擇在(比如)405奈米至790奈米或甚至更低(諸如，200奈米至300奈米)之範圍內的所關注波長。干涉濾波器可為可調諧的，而非包括不同濾波器之集合。可代替干涉濾波器而使用光柵。
偵測器18可量測經散射輻射或光在單一波長(或窄波長範圍)下之強度、單獨地在多個波長下之強度，或在一波長範圍內所積分之強度。此外，偵測器可單獨地量測橫向磁偏振輻射及橫向電偏振輻射或光之強度，及/或橫向磁偏振輻射與橫向電偏振輻射或光之間的相位差。
使用寬頻帶輻射源或光源(亦即，具有寬輻射頻率或波長範圍且因此具有寬顏色範圍之輻射源或光源)為可能的，其給出較大光展量(etendue)，從而允許多個波長之混合。寬頻帶中之複數個波長較佳地各自具有δλ之頻寬及至少2δλ(亦即，頻寬之兩倍)之間隔。若干輻射「源」可為延伸式輻射源之已使用光纖束而分裂的不同部分。以此方式，可在多個波長下並行地量測角度解析散射光譜。可量測3-D光譜(波長及兩個不同角度)，其與2-D光譜相比含有更多資訊。此允許量測更多資訊，其增加度量衡過程穩固性。此在EP1,628,164A中得以更詳細地描述。
基板W上之目標30可為光柵，其經印刷，使得在顯影之後，條狀物(bar)係由固體抗蝕劑線形成。條狀物可或者經蝕刻至基板中。此圖案對微影投影裝置(特別為投影系統PL)中之色像差敏感，且照明對稱性及該等像差之存在將使其自身表現為經印刷光柵之變化。因此，將經印刷光柵之散射量測資料用以重新建構光柵。根據對印刷步驟及/或其他散射量測過程之認識，可將光柵之參數(諸如，線寬及形狀)輸入至由處理單元PU所執行之重新建構過程。
使用本發明之一實施例來評估基板上之特徵的模型，且圖5描繪本發明之實施例中所涉及之程序。在程序S1處，使用待評估之基板而使用已知特性之輻射來進行特徵之散射量測。接著，在程序S2處，使用量測來判定基板之特徵之特定特性(例如，側壁角度)的第一值。在程序S3處，改變輻射之波長，且接著，在程序S4處採取同一特徵之第二散射量測。接著，在程序S5處判定基板之特徵之特定特性的第二值。可在程序S6處比較特徵之特性的此等兩個值。若值類似，則其指示模型精確。然而，若值不同，則其可指示模型不精確。在一實施例中，判定特徵之特性的第二值是否在第一值之預定範圍內。預定範圍可為第一值之一部分。
亦有可能代替特徵之特定特性的值而將殘餘值用於評估模型。殘餘值為光瞳平面中由經量測結構或剖面引起之角度解析光譜與光瞳平面中由經重新建構結構或剖面引起之角度解析光譜之間的差。採取第一散射量測以判定第一殘餘值。採取第二散射量測(在第一量測之後或並行於第一量測)以判定第二殘餘值。接著，比較第一殘餘值與第二殘餘值。若殘餘值類似，則其指示模型精確。若殘餘值不同，則其可指示模型不精確。代替殘餘值，亦可使用擬合優度來評估模型之品質，擬合優度經界定為經量測光瞳平面(亦即，經量測角度解析光譜)與經計算光瞳平面(亦即，由經重新建構剖面引起之角度解析光譜)之間的平方相關。
如圖5所示，可重複地改變輻射之特性且採取重複量測。所採取之量測愈多，則將愈易於判定模型是否精確。圖6描繪在複數個波長下所量測之經判定側壁誤差(SWA-err)。藉由使用間距140奈米及臨界尺寸55奈米之密集抗蝕劑光柵而獲得此等結果。可見，存在側壁誤差之大變化，此指示模型不完全精確。
回應於模型不精確之該判定，可修正模型以包括額外特徵或以調整當前特徵(例如，線邊緣粗糙度或頂部或底部圓度)。因此，本發明之一實施例使能夠評估模型之精確度。
可使用此方法來評估適當數目之參數是否已用於模型中。舉例而言，使用儘可能少之參數的模型可加以使用。在各種波長下採取散射量測，且若結果在波長範圍內一致，則所使用之參數的數目為足夠的。然而，若結果在波長範圍內變化，則需要添加額外參數，直到結果在波長範圍內一致為止。可針對每一基板而重複此過程，或者，針對基板之每一分批而將此過程僅重複一次。
儘管以上實施例描述輻射之波長的調整，但亦可調整輻射之其他特性。舉例而言，基板上之入射角、偏振或照明模式(TE或TM)。
可使用習知方法來調整輻射之波長，諸如，干涉濾波器、與氙燈組合之聲光可調諧濾波器，或超連續雷射。或者，可使用多個輻射源，每一者具有不同波長。可使用(例如)成像光譜計而順次或同時量測輻射之不同波長。舉例而言，可使用彩色CCD來量測在三色源之三個不同波長下的強度。成像光譜計可便利地位於裝置之偵測分支中。
達成多個波長之替代方法係使用傅立葉變換光譜計。圖7中展示傅立葉變換光譜計。在此光譜計中，藉由光束分光器46而將光束分裂成兩個光束。藉由固定位置鏡面48來反射第一光束，且藉由移動鏡面49來反射第二光束。接著，藉由光束分光器來重新組合兩個光束。兩個光束干涉，其中干涉視光學延遲而定且因此視兩個光束之間的路徑差而定。接著，在複數個位置處藉由移動鏡面來量測強度且判定光譜。為了判定精確光譜，應量測數百個強度：所量測之強度愈多，則光譜愈精確。接著，使光譜經受傅立葉變換以獲得針對每一波長之量測，且可判定有關參數。應結合(例如)產生各種不同波長之輻射的白輻射或光源而使用該傅立葉變換光譜計。傅立葉變換光譜計可置放於光譜計之燈罩中，或者，置放於偵測器18之前方或形成偵測器18之一部分。
在一實施例中，偵測器經組態以將經偵測輻射分離成複數個分部，每一分部之輻射針對特性具有不同值。另外，檢查裝置亦可包括成像光譜計，成像光譜計經組態以將經偵測輻射分離成複數個分部，每一分部之輻射針對特性具有不同值。
儘管在此本文中可特定地參考微影裝置在IC製造中之使用，但應理解，本文所描述之微影裝置可具有其他應用，諸如，製造積體光學系統、用於磁域記憶體之導引及偵測圖案、平板顯示器、液晶顯示器(LCD)、薄膜磁頭，等等。熟習此項技術者應瞭解，在該等替代應用之情境中，可認為本文對術語「晶圓」或「晶粒」之任何使用分別與更通用之術語「基板」或「目標部分」同義。可在曝光之前或之後在(例如)軌道(通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)、度量衡工具及/或檢查工具中處理本文所提及之基板。適用時，可將本文之揭示應用於該等及其他基板處理工具。另外，可將基板處理一次以上，(例如)以便形成多層IC，使得本文所使用之術語基板亦可指代已經含有多個經處理層之基板。
儘管以上可特定地參考在光學微影術之情境中對本發明之實施例的使用，但應瞭解，本發明可用於其他應用(例如，壓印微影術)中，且在情境允許時不限於光學微影術。在壓印微影術中，圖案化器件中之構形界定形成於基板上之圖案。可將圖案化器件之構形壓入被供應至基板之抗蝕劑層中，在基板上，抗蝕劑藉由施加電磁輻射、熱、壓力或其組合而固化。在抗蝕劑固化之後，將圖案化器件移出抗蝕劑，從而在其中留下圖案。
本文所使用之術語「輻射」及「光束」涵蓋所有類型之電磁輻射，包括紫外線(UV)輻射(例如，具有為或為約365奈米、355奈米、248奈米、193奈米、157奈米或126奈米之波長)及遠紫外線(EUV)輻射(例如，具有在為約5奈米至20奈米之範圍內的波長)；以及粒子束(諸如，離子束或電子束)。
術語「透鏡」在情境允許時可指代各種類型之光學組件中之任一者或組合，包括折射、反射、磁性、電磁及靜電光學組件。
儘管以上已描述本發明之特定實施例，但應瞭解，可以與所描述之方式不同的其他方式來實踐本發明。舉例而言，本發明可採取如下形式：電腦程式，其含有描述如以上所揭示之方法之機器可讀指令的一或多個序列；或資料儲存媒體(例如，半導體記憶體、磁碟或光碟)，其具有儲存於其中之該電腦程式。
以上描述意欲為說明性而非限制性的。因此，對於熟習此項技術者而言將顯而易見的為，可在不脫離以下所闡明之申請專利範圍之範疇的情況下對如所描述之本發明進行修改。
2．．．寬頻帶(白光)輻射投影儀
4．．．光譜計偵測器
10．．．光譜
11．．．背部投影式光瞳平面
12．．．透鏡系統
13．．．干涉濾波器
14．．．參考鏡面
15．．．顯微鏡接物鏡
16．．．部分反射表面
17．．．偏振器
18．．．偵測器
30．．．目標
46．．．光束分光器
48．．．固定位置鏡面
49．．．移動鏡面
AD．．．調整器
B．．．輻射光束
BD．．．光束傳送系統
BK．．．烘焙板
C．．．目標部分
CH．．．冷卻板
CO．．．聚光器
DE．．．顯影器
I．．．強度
IF．．．位置感測器
IL．．．照明器
IN．．．積光器
I/O1．．．輸入/輸出埠
I/O2．．．輸入/輸出埠
LA．．．微影裝置
LACU．．．微影控制單元
LB．．．裝載盤
LC．．．微影單元
M1．．．光罩對準標記
M2．．．光罩對準標記
MA．．．圖案化器件
MT．．．圖案化器件支撐件
P1．．．基板對準標記
P2．．．基板對準標記
PL．．．投影系統
PM．．．第一定位器
PU．．．處理單元
PW．．．第二定位器
RO．．．機器人
SC．．．旋塗器
SCS．．．監督控制系統
SM1．．．散射計
SM2．．．散射計
SO．．．輻射源
TCU．．．軌道控制單元
W．．．基板
WT．．．基板台
X．．．方向
Y．．．方向
λ．．．波長
圖1描繪根據本發明之一實施例的微影裝置；
圖2描繪根據本發明之一實施例的微影單元或叢集；
圖3描繪根據本發明之一實施例的第一散射計；
圖4描繪根據本發明之一實施例的第二散射計；
圖5展示根據本發明之一實施例的流程圖；
圖6描繪展示來自根據本發明之一實施例之方法之結果的曲線；且
圖7描繪根據本發明之一實施例的傅立葉變換光譜計。
(無元件符號說明)

Claims (15)

  1. 一種評估一基板之一特徵之一模型的方法，該方法包含：使用具有已知特性之輻射而進行該基板之一第一散射量測，該輻射具有一第一特性值；使用該第一散射量測而判定該基板之該特徵之一特性的一第一值或一第一殘餘值；使用具有一第二特性值之該輻射而進行一第二散射量測；使用該第二散射量測而判定該特徵之該特性的一第二值或一第二殘餘值；及比較該特徵之該特性的該第一值與該第二值或該第一殘餘值與該第二殘餘值以判定該模型之精確度。
  2. 如請求項1之方法，其進一步包含將該輻射之一特性改變至一第三值。
  3. 如請求項1之方法，其進一步包含：使用具有一第三特性值之該輻射而進行一第三散射量測；及使用該第三散射量測而判定該特徵之該特性的一第三值；其中該比較比較該特徵之該特性的該第一值、該第二值與該第三值。
  4. 如請求項3之方法，其進一步包含將該輻射之該特性改變至一第四值。
  5. 如請求項1之方法，其中待改變之該輻射特性為該輻射之波長。
  6. 如請求項1之方法，其中待改變之該輻射特性為該輻射之偏振。
  7. 如請求項1之方法，其中待改變之該輻射特性為該基板上之一入射角。
  8. 如請求項1之方法，其中待改變之該輻射特性為該輻射之一照明模式。
  9. 如請求項1之方法，其中該比較包含判定該特徵之該特性的該第二值是否在該第一值之一預定範圍內。
  10. 如請求項9之方法，其中該預定範圍為該第一值之一部分。
  11. 一種經組態以量測一基板上之一目標的檢查裝置，該裝置包含：一輻射投影儀，該輻射投影儀經組態以將輻射投影至該基板上；一高數值孔徑透鏡；一偵測器，該偵測器經組態以偵測自該基板之一表面所反射的該輻射；及一成像傅立葉變換光譜計，其包含一光束分光器、一固定位置鏡面以及一移動鏡面，其中該光束分光器分裂並重新組合不同的光束。
  12. 如請求項11之檢查裝置，其中該成像傅立葉變換光譜計配置於該偵測器中。
  13. 一種微影裝置，其包含：一照明系統，該照明系統經配置以照明一圖案；一投影系統，該投影系統經配置以將該圖案之一影像投影至一基板上；及一檢查裝置，該檢查裝置經組態以量測該基板上之一目標，該檢查裝置包含：一輻射投影儀，該輻射投影儀經組態以將輻射投影至該基板上；一高數值孔徑透鏡；一偵測器，該偵測器經組態以偵測自該基板之一表面所反射的該輻射光束；及一成像傅立葉變換光譜計，其包含一光束分光器、一固定位置鏡面以及一移動鏡面，其中該光束分光器分裂並重新組合不同的光束。
  14. 如請求項13之微影裝置，其中該成像傅立葉變換光譜計配置於該照明系統中。
  15. 如請求項13之微影裝置，其中該成像傅立葉變換光譜計配置於該偵測器中。
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US8830472B2 (en) 2014-09-09
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JP5100887B2 (ja) 2012-12-19
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TW200947148A (en) 2009-11-16
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