TWI470100B - Aluminum alloy sputtering target - Google Patents

Description

Aluminum-based alloy sputtering target

The present invention relates to an aluminum-based alloy sputtering target which can be used for a wiring film and an electrode film which are formed on a flat panel display such as a liquid crystal display. Hereinafter, the liquid crystal display will be mainly described, but the purpose of the present invention is not to limit the use of the present invention.

A liquid crystal display (LCD) which is one of semiconductor devices can be made thinner, lighter, and lower in power consumption than a Brown tube using a conventional display device, and has an advantage of obtaining high resolution. Therefore, it has recently become the mainstream of display devices. In such an LCD, a TFT liquid crystal in which a thin film transistor (TFT: Thin Film Transistor) serving as a pixel switch is mainly used.

The metal thin film constituting the thin film electrode used as a part of the TFT and the wiring connected thereto is required to have various characteristics, in particular, to prevent signal delay with the increase in size or high definition of the LCD in recent years. Low wiring resistance is becoming an important feature.

As a metal thin film material of such a low wiring resistance, pure aluminum can be mentioned. However, since the heat resistance of pure aluminum is insufficient, a metal film using pure aluminum is subjected to a thermal process of about 200 to 400 ° C in the film formation step of the insulating film at the manufacturing stage of the LCD, etc., due to the substrate and The compressive stress caused by the difference in the thermal expansion coefficient of the film serves as the driving force, and the surface has a small unevenness called a hillock, which may cause a short circuit or a disconnection between the wires.

Therefore, various techniques have been disclosed in order to solve the problem of the occurrence of the protrusions. For example, Japanese Patent No. 2733006 discloses an electrode for a semiconductor comprising an Al alloy containing 1.0 to 15% by atom of a rare earth element such as Nd. Further, Japanese Patent No. 2727967 discloses a wiring film and an electrode film which are formed of an Al-based alloy containing 1.0 to 10 atom% of Fe or a rare earth element. Further, Japanese Patent No. 4009165 discloses an Al-based alloy thin film containing 0.1 to 3.0 atom% of Fe and 0.5 to 3.0 atom% of Si. However, the Al-based alloy disclosed in these documents has a high content rate of the alloy element, and therefore, as the liquid crystal panel is increased in size, there is no possibility of correspondingly lower wiring resistance (especially, reduction in wiring resistance after heat treatment). Happening.

On the other hand, an Al alloy sputtering target is disclosed as an Al alloy sputtering target for forming a thin film electrode, a thin film wiring, or the like, which contains Fe and Si in an amount of 0.001 to 0.01, respectively. The mass % and the Cu content are 0.0001 to 0.01% by mass, and the average crystal grain size is 5 mm or less. The metal thin film obtained by using such a sputtering target has a smaller amount of alloying elements than the metal thin film described in Japanese Patent No. 2733006, Japanese Patent No. 2727967, and Japanese Patent No. 4009165. On the other hand, there is a case where the resistance of the protrusion is lowered by reducing the amount of the alloying element. Further, in order to reduce the crystal grain size (5 mm or less), the occurrence of spatter during sputtering is suppressed, and in addition to Fe and Si, Cu is also an essential component.

Further, Japanese Patent No. 3410278 discloses a technique for suppressing occurrence of spatter during sputtering, and has a low hardness in an Al-based alloy sputtering target containing a high melting point metal such as Ti, zr or Cr (Hv). 25) The person can suppress the splash.

The present invention has been made in view of the above circumstances, and an object thereof is to provide an aluminum-based alloy sputtering target containing Fe and Si, which can be used to form a low wiring resistance (a wiring resistance after a thermal process of about 300 ° C is 3.7 μΩcm or less) It is preferable to further suppress the occurrence of spatter during sputtering at the time of the metal film excellent in protrusion resistance.

The present invention includes the following aspects.

(1) An aluminum-based alloy sputtering target comprising Fe in an amount of 0.0010 to 0.4% by mass and Si in an amount of 0.0010 to 0.50% by mass.

(2) The aluminum-based alloy sputtering target according to (1), which has a hardness Hv of 26 or more.

(3) The aluminum-based alloy sputtering target according to (1), which contains at least one of 0.0005 to 0.05% by mass of Ti and 0.0001 to 0.01% by mass of B.

(4) The aluminum-based alloy sputtering target according to (2), which contains at least one of 0.0005 to 0.05% by mass of Ti and 0.0001 to 0.01% by mass of B.

(5) The aluminum-based alloy sputtering target according to any one of (1) to (4), which contains at least one element selected from the group consisting of Mn, Cr, Mo, and Nb in an amount of 0.001 to 0.1% by mass.

(6) An aluminum-based alloy sputtering target comprising Fe in an amount of 0.0010 to 0.4% by mass, Si in an amount of 0.0010 to 0.50% by mass, and at least one element selected from the group consisting of Mn, Cr, Mo, and Nb is 0 to 0.1% by mass, Ti is 0 to 0.05% by mass, B is 0 to 0.01% by mass, and the remainder is A1 and unavoidable impurities.

(7) The aluminum-based alloy sputtering target according to (6), which has a hardness Hv of 26 or more.

(8) The aluminum-based alloy sputtering target according to (6), wherein the content of Ti is 0.0005 to 0.05% by mass.

(9) The aluminum-based alloy sputtering target according to (7), wherein the content of Ti is 0.0005 to 0.05% by mass.

(10) The aluminum-based alloy sputtering target according to (6), wherein the content of B is 0.0001 to 0.01% by mass.

(11) The aluminum-based alloy sputtering target according to (7), wherein the content of B is 0.0001 to 0.01% by mass.

(12) The aluminum-based alloy sputtering target according to (8), wherein the content of B is 0.0001 to 0.01% by mass.

(13) The aluminum-based alloy sputtering target according to (9), wherein the content of B is 0.0001 to 0.01% by mass.

The aluminum-based alloy sputtering target according to any one of (6) to (13), wherein the content of at least one element selected from the group consisting of Mn, Cr, Mo, and Nb is 0.001 to 0.1% by mass.

[Effect of the invention]

Since the aluminum-based alloy sputtering target of the present invention has a moderate adjustment of the content of alloying elements (Fe, Si, etc.), it is possible to form both excellent low wiring resistance (the wiring resistance after a thermal process of about 300 ° C is 3.7) Metal film with a protrusion resistance of μΩcm or less). Further, by setting the hardness (Hv) of the aluminum-based alloy sputtering target to 26 or more, it is possible to suppress the occurrence of spatter during sputtering.

The aluminum-based alloy sputtering target of the present invention (hereinafter sometimes simply referred to as "sputter target") is characterized by containing Fe in an amount of 0.0010 to 0.4% by mass and Si in an amount of 0.0010 to 0.50% by mass.

When the composition of the sputtering target of the present invention is compared with the above-mentioned Japanese Patent No. 4009165, the lower limit of Si in Japanese Patent No. 4009165 is 0.5 atom% (≒0.52% by mass), The present invention differs in that the upper limit of the Si content is 0.50% by mass or less. As will be described in detail below, according to the findings of the present inventors, it has been found that by controlling Fe and Si within the range specified by the present invention, the obtained target can provide further reduction in wiring resistance, particularly after heat treatment, and both A metal film with excellent protrusion resistance. In addition, in the Japanese Patent Publication No. 2007-63621, the upper limit of the upper limit of Fe and Si is reduced to 0.01% by mass, and approximately Cu is added to the same extent, which is different from the present invention in which Cu is not added. In addition, in the case of a small amount of addition of Fe, Si, and Cu, the crystal grain size is made fine, and splashing during sputtering is particularly suppressed, but it is known from the study by the inventors of the present invention. Even if Cu is not added, the occurrence of spatter can be effectively suppressed by appropriately controlling the hardness (Hv ≧ 26) of the target. In the Japanese Patent Publication No. 2007-63621, the hardness (Hv) which can effectively suppress the occurrence of spatter in the target containing a very small amount of Fe and Si according to the present invention is not established.

In the target of the present invention, the content of the alloying elements (Fe and Si) is lowered or adjusted as compared with the conventionally known target, whereby not only the low wiring resistance of the obtained metal thin film but also the protrusion can be improved. Resistance, although its mechanism is not clear, is presumed as follows.

It is generally known that the low wiring resistance of an aluminum-based alloy is caused by the following two points:

(1) precipitation of a supersaturated solid solution alloy element in a film formation process (near 150 to 180 ° C) in a subsequent step, and

(2) The change of the film structure as the grain size is coarsened due to grain growth; among them, in particular, the precipitation of the solid solution element (the decrease of the total solid solution amount of the element in the solid solution state) of (1) is large. .

Further, it is also known that in the suppression of protrusions, it is necessary that a certain amount of solid solution elements remain in a solid solution state in the crystal grains in the film formation process (near 150 to 180 ° C).

Therefore, in order to obtain a metal thin film having both low wiring resistance and high protrusion resistance, it is necessary to maintain a solid solution state of a certain amount or more of a solid solution element in the film formation process (near 150 to 180 ° C), and insulation at the LCD manufacturing stage. Precipitation of solid solution elements is promoted in a step such as film formation of a film (200 to 400 ° C).

Then, the present inventors have found that Fe as an alloying element in an aluminum-based alloy is precipitated at 220 to 250 ° C, and Si has an effect of suppressing grain growth, and by using Fe and Si together as an alloying element, even in a low temperature region The film formation can also reduce the wiring resistance (refer to Japanese Patent No. 4009165). The reason is that the precipitation of alloying elements is a process of diffusion of atoms after solid solution to the grain boundary and a process of agglomeration at the grain boundary by the grain boundary, but in the low temperature region (around 200 ° C), in particular The rate of body diffusion is controlled. Therefore, this is because, by suppressing grain growth, the distance at which the solid solution element diffuses to the grain boundary is reduced, and the alloying elements are rapidly precipitated.

On the other hand, the present inventors have further studied and found that by using Fe and Si in combination, there is a case where the protrusion resistance is lowered. This is presumably because Fe reacts with Si to form a FeSi-based composite, and precipitates during film formation, and it is impossible to maintain a solid solution state of a certain amount or more of a solid solution element.

According to the above, in the present invention, by reducing the content of Si in the aluminum-based alloy to be lower than that of Japanese Patent No. 4009165, the amount of Fe which is precipitated during the film formation can be reduced by reacting with Si. Maintaining the solid solution state of the solid solution element can suppress the deterioration of the protrusion resistance. Further, since the amount of Fe to be deposited is reduced, it is possible to secure a certain amount or more of the amount of solid solution Fe even if the amount of Fe added is reduced. For this reason, the amount of alloying elements in the aluminum-based alloy can be reduced as a whole, and low wiring resistance can be achieved while maintaining excellent protrusion resistance.

Hereinafter, the aluminum-based alloy sputtering target of the present invention characterized by containing 0.0010 to 0.50% by mass of Si and 0.0010 to 0.4% by mass of Fe will be described in detail. Further, the content ratio of the alloying elements means the content ratio with respect to the aluminum-based alloy sputtering target.

(alloy element)

As described above, the Si contained in the target of the present invention has an effect of suppressing grain growth and promoting precipitation of other solid solution elements (Fe, Mn or the like described later), and the content of Si is 0.0010 to 0.50. The mass % can effectively exert the above effects. Further, it is possible to prevent precipitation of Fe after forming a FeSi-based composite.

When the content of Si is less than 0.0010% by mass, the precipitation of the solid solution element cannot be promoted even after the thermal process in the subsequent step such as film formation of the insulating film, and the wiring resistance of the obtained metal thin film may be lowered. Further, the amount of the solid solution component in the metal thin film is too small, and it is impossible to maintain a solid solution state of a certain amount or more of the solid solution element during the film formation, and conversely, the protrusion resistance may be lowered. On the other hand, when the content of Si exceeds 0.50% by mass, Fe which is used in combination with Si is promoted, and a solid solution state of a certain amount or more of a solid solution element cannot be maintained during the film formation, and there is a protrusion resistance of the metal film. Reduced situation. Further, there is a case where the amount of the alloy component in the metal thin film increases, and the wiring resistance may increase. The content of Si is preferably 0.01% by mass or more (more preferably 0.03% by mass or more), and is preferably 0.25% by mass or less (more preferably 0.1% by mass or less). The upper limit and the lower limit of the above content ratio can be arbitrarily combined to form a range of the content ratio of Si.

As described above, the Fe contained in the target of the present invention can maintain a solid solution state during film formation, thereby improving the protrusion resistance of the obtained metal thin film. In addition, it precipitates at 220 to 250 ° C, which in turn promotes grain growth, thereby contributing to low wiring resistance. The above effect can be effectively exhibited by setting the content of Fe to 0.0010 to 0.4% by mass.

When the content of Fe is less than 0.0010% by mass, a certain amount of solid solution elements cannot be secured during the film formation, and the protrusion resistance of the obtained metal film may be lowered. When the content of Fe exceeds 0.4% by mass, the amount of alloying elements in the metal thin film increases, and thus the wiring resistance does not decrease. The content of Fe is preferably 0.01% by mass or more (more preferably 0.05% by mass or more), and is preferably 0.38% by mass or less (more preferably 0.35% by mass or less). The upper limit and the lower limit of the above content ratio can be arbitrarily combined to form a content range of Fe.

As described above, in the target of the present invention, compared with Japanese Patent No. 4009165, the addition amount of Si and Fe as an alloy component is reduced as a whole, and the amount of the alloy component in the alloy thin film is lowered, so that the wiring resistance can be further improved. reduce.

The target of the present invention may contain, as an alloying element, at least one element selected from the group consisting of Mn, Cr, Mo, and Nb (hereinafter sometimes abbreviated as "M element") in addition to Si and Fe described above. . These elements may be used singly or in combination of two or more. Like the Fe, the M element can improve the protrusion resistance of the metal thin film. Further, since it diffuses rapidly at a low temperature, it is easily precipitated at the film forming step, and the heat treatment at the time of film formation (or after film formation) can promote the reduction in wiring resistance. Further, since the solid solution limit to Al is small, even if a solid solution element (M element) remains in the metal thin film, it is difficult to contribute to an increase in wiring resistance.

The content of the M element (in a single amount when used alone or in a total amount of two or more kinds thereof) is preferably 0.1% by mass or less (more preferably 0.03% by mass or less, still more preferably 0.01% by mass or less). When the content of the M element exceeds 0.1% by mass, the amount of the alloy component in the metal thin film increases, which may cause an increase in wiring resistance. The lower limit of the content of the M element is not particularly limited, but is preferably 0.001% by mass or more (more preferably 0.002% by mass or more) in order to effectively exhibit the above effects. The upper limit and the lower limit of the above content ratio can be arbitrarily combined to form a content range of the M element.

The target of the present invention may further contain Ti and B as alloying elements. Thereby, it is possible to prevent cracks in the casting step at the time of production of the target, and it is possible to achieve a reduction in the thickness of the cast structure. The content of Ti is preferably 0.0005% by mass or more (more preferably 0.002% by mass or more), and is preferably 0.05% by mass or less (more preferably 0.03% by mass or less). The upper limit and the lower limit of the above content ratio can be arbitrarily combined to form a range of the content ratio of Ti. In addition, the content of B is preferably 0.0001% by mass or more (more preferably 0.0004% by mass or more), and is preferably 0.01% by mass or less (more preferably 0.006% by mass or less). The upper limit and the lower limit of the above content ratio can be arbitrarily combined to form a content ratio range of B.

The target system of the present invention has a predetermined amount of an Al-based alloy containing Si and Fe and the remainder being Al and unavoidable impurities, or an Al-based alloy containing Si and Fe and M elements in a predetermined amount and the remainder being Al and unavoidable impurities, Or an Al-based alloy containing Si and Fe and M elements in a predetermined amount, and also containing a predetermined amount of Ti and/or B and the remainder being Al and unavoidable impurities. As an unavoidable impurity, 0.02 mass % or less of Mg and 0.03 mass % or less of Zn are mentioned.

(hardness)

The target of the present invention preferably has a hardness (Hv) of 26 or more. Thereby, splashing at the time of sputtering can be suppressed.

It is generally known that when the amount of impurities (alloy elements, etc.) in the target is 0.01% by mass or more, splashing is likely to occur, but according to the aluminum-based alloy target containing Fe and Si according to the present invention, it is found that the hardness (Hv) of the target is made 26 or more, even if the amount of impurities in the target is 0.01% by mass or more, splashing at the time of sputtering can be suppressed. As described above, although the mechanism for suppressing spatter when the hardness (Hv) is 26 or more is not clear, it is presumed that it may be affected by the surface roughness after machining as with the Mo-W alloy.

The hardness (Hv) of the target of the present invention is more preferably 28 or more. Further, the upper limit of the hardness (Hv) is not particularly limited, but in a low alloy system in which the amount of added elements is small, it is technically difficult to make the hardness (Hv) exceed 60. A preferred upper limit is 50 (more preferably 40).

(Manufacturing method of sputtering target)

The method for producing the target of the present invention is not particularly limited, and examples thereof include a spray forming method and a melt casting method. However, in order to produce a target having a hardness (Hv) of 26 or more, in order to reduce the manufacturing cost, It is made by melt casting.

In more detail, the target of the present invention can be produced after the general melt casting by the following sequential steps: a soaking step; a rough hot rolling step; a finishing hot rolling step; (a winding step, a winding step, as needed, Stretching step), cutting step, (cold processing step as needed), target processing step. Moreover, in order to ensure a predetermined hardness (Hv), in the above-described respective steps, it is preferred to lower the rolling temperature, lower the coiling temperature, adjust the amount of stretching, and adjust the cold rolling ratio during cold working. By performing one or a combination of two or more of the steps or the control performed according to the above needs, a target having a hardness (Hv) of 26 or more can be produced. In particular, in the present invention, the rolling temperature and the coiling temperature are lower than those of the conventional (about 500 ° C or higher). Further, the target of the present invention is different from JP-A-2007-63621, and the annealing step after the cutting can be omitted. Hereinafter, each step will be described in detail for the preferred manufacturing method employed in the present invention.

(melting casting process)

The molten casting step is not particularly limited, and a step generally used in the production of a sputtering target can be suitably employed. For example, as a casting method, DC (semi-continuous) casting and thin-plate continuous casting (two-roll type, belt-cast type, and Propez ( ), block casting, etc.).

(soaking step)

In the soaking step, in order to secure the hardness, the soaking temperature is preferably about 350 to 500 ° C, and more preferably the upper limit is 450 ° C. In addition, the soaking time is preferably controlled in about 1 to 8 hours.

(crude hot rolling step)

After the above soaking is performed, rough hot rolling is performed. In order to secure the hardness, the rough hot rolling start temperature is preferably about 350 to 500 ° C, and more preferably the upper limit is 450 ° C. Further, it is preferred to control the total reduction ratio to about 50 to 95%.

(fine hot rolling step)

In the present invention, finish hot rolling is performed after the rough hot rolling step. In order to secure the hardness, the finish hot rolling start temperature is preferably about 200 to 500 ° C, and more preferably the upper limit is 400 ° C. Further, it is preferred to control the total reduction ratio to about 50 to 90%.

(rolling step, roll-off step)

In the present invention, after the finish hot rolling, the winding and unwinding operations can also be performed as needed. The coiling temperature is preferably about 200 to 450 ° C, and more preferably the upper limit is 400 ° C.

(stretching step)

In the present invention, after the finish hot rolling (or after the winding step and the winding step), stretching may be carried out as needed. Stretching can be carried out at room temperature. Further, the processing rate is preferably 1% or more.

(cold processing step)

In the present invention, after the target obtained by the above steps is cut into an appropriate size, in order to secure the hardness, cold working may be performed as needed. The processing rate is preferably controlled at 5 to 50%.

[Examples]

Hereinafter, the present invention will be described in detail based on examples. However, the following examples are not intended to limit the scope of the invention, and modifications and modifications are intended to be included within the scope of the invention.

First, the evaluation methods used in the experimental examples will be described below.

(hardness)

The hardness (Vickers hardness: Hv) of the sputtering target was measured using a Vickers hardness meter (made by Akashi Seisakusho Co., Ltd., AVK-G2).

(protrusion resistance)

Using a sputtering target, a DC magnetron sputtering was performed on a Si wafer substrate (dimensions: diameter: 100.0 mm × thickness: 0.50 mm) using a sputtering apparatus of a "sputtering system HSR-542S" manufactured by Shimadzu Corporation. The sputtering conditions are as follows.

Back pressure: 3.0×10 ^-6 Torr or less

Ar pressure: 2.25 × 10 ^-3 Torr

Ar gas flow: 30sccm, sputtering power: 150W

Distance between poles: 51.6mm

Substrate temperature: room temperature

On the surface of the obtained film, a positive photoresist (phenolic resin: TSMR-8900 manufactured by Tokyo Ohka Kogyo Co., Ltd., a line having a thickness of 1.0 μm and a line width and a gap of 10 μm) was formed by photolithography. Heat treatment was carried out at 270 ° C for 15 minutes or at 320 ° C for 30 minutes in a reduced pressure nitrogen atmosphere (pressure 1 Pa) in a CVD apparatus.

Next, the number of protrusions (hemispherical protrusions) occurring in the surface portion of the stripe pattern and the cross-sectional portion (side portion) of the pattern was confirmed by a 10000-fold electron microscope (SEM), and the objective lens 50 was observed with an optical microscope. The magnification of the eyepiece and the eyepiece was 10 times, and the number of protrusions in the field of view was measured by differential interference by a Normarski lens to obtain the protrusion density (the number of protrusions per unit area).

The criterion for determining the protrusion resistance is ◎ when the protrusion density is less than 3.0 × 10 ⁹ /m ² , and ○ when (3.0 to 9.0) × 10 ⁹ / m ² , and when it exceeds 9.0 × 10 ⁹ / m ² For ×.

(wiring resistance)

The stripe pattern shape having a line width of 100 μm was processed in the same manner as in the above-described method for producing a sample for measuring protrusion resistance, and then processed into a pattern for measuring a wiring resistance of a line width of 100 μm and a line length of 10 mm by wet etching. A wet liquid was used for the wet etching using a mixture of H ₃ PO ₄ :HNO ₃ :H ₂ O=75:5:20. In order to apply a thermal process thereto, the film was held at 270 ° C for 15 minutes or at 320 ° C for 30 minutes in a reduced pressure nitrogen atmosphere (pressure 1 Pa) in the same CVD apparatus as the protrusion measurement after the aforementioned etching treatment. Heat treatment. Thereafter, the specific resistance value was measured at room temperature by a four-probe method.

(splash)

The number of spatters (initial splashes) which occurred when sputtering was performed under the above conditions was measured.

A sputter target forms 16 films. Therefore, the sputtering was performed for 81 (seconds) × 16 (pieces) = 1296 seconds.

The particle position coordinates, the size (average particle diameter) and the number of the particles confirmed on the surface of the film were measured using a particle counter (manufactured by TOPCON Co., Ltd.: wafer surface inspection device WM-3). Here, those having a size of 3 μm or more are regarded as particles. Thereafter, the surface of the film was observed under an optical microscope (magnification: 1000 times), and the shape of the hemisphere was regarded as a splash, and the number of splashes per unit area was measured.

Specifically, while the Si wafer substrate was replaced, the above-mentioned one thin film was subjected to the sputtering step described above, and this step was carried out in the same manner in the 16 films, and the average value of the number of splashes was referred to as "the occurrence of initial splash". number". In the present experimental example, the number of occurrences of the initial splash obtained in this manner was 20 pieces/cm ² or less, and it was evaluated as ○, and those of 21 pieces/cm ² or more were evaluated as ×.

(Experimental Examples 1 to 11)

Various aluminum-based alloys shown in Table 1 (the remainder being Al and unavoidable impurities) were prepared, and a 500 mm thick ingot was cast by DC casting, and then subjected to a soaking treatment at 450 ° C for 2 hours, followed by 450 ° C, 90%. The amount of reduction was subjected to rough hot rolling, followed by hot rolling at 400 ° C and 70% reduction, and coiling at 350 ° C. Thereafter, the film was wound up, and 3% was processed by a stretching machine, and cut into a sputtering target (rolled sheet). Further, cold working was carried out in Experimental Example 6. At this time, the reduction ratio is controlled at 20%.

Using the obtained sputtering target, hardness and splash were evaluated according to the above method. In addition, the protrusion resistance and the wiring resistance at the time of the metal thin film were evaluated. The evaluation results are shown in Table 1.

According to the results, the target of the present invention containing Fe in an amount of 0.0010 to 0.4% by mass and Si in an amount of 0.0010 to 0.50% by mass is excellent in protrusion resistance and low wiring resistance even after heat treatment at any of 270 ° C or 320 ° C. The occurrence of spatter during sputtering was also reduced (Experimental Examples 1 to 6). In particular, as a target containing an alloy component and further containing an M element, it was found that the protrusion resistance was more excellent (Experimental Examples 4 to 6). On the other hand, it is understood that the protrusion resistance is lowered in the target in which the content ratio of Fe and Si is too low (Experimental Example 7). In addition, when the content ratio of any of Fe or Si is outside the range of the present invention, the wiring resistance is high (Experiments 8 to 10). In addition, when the content ratio of the M element is outside the range of the present invention, the wiring resistance is also high (Experimental Example 11).

The present invention has been described in detail with reference to the specific embodiments thereof, and it is understood that various changes and modifications can be made without departing from the spirit and scope of the invention.

The present application is based on Japanese Patent Application No. 2009-251398, filed on Jan.

Claims (2)

An aluminum-based alloy sputtering target comprising Fe of 0.0010 to 0.4% by mass, Si of 0.0010 to 0.50% by mass, and Mn of 0.001 to 0.1% by mass. The aluminum-based alloy sputtering target of the first application of the patent scope has a hardness Hv of 26 or more.