1326465 UMCD-2005-0528 18213twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於-種晶圓的清洗方法，且特別是有關 於一種蝕刻後晶圓的清洗方法。 【先前技術】 金屬鑲嵌製程是一種將金屬内連線巧妙地嵌入於絕緣 層的技術。其作法係在基底上的介電層中依昭 導線的圖案以及接«的錄，_介電層成= 以及接觸窗開口。然後，再於基底上沈積一層金屬層，使 其填滿溝渠齡層窗π，以同時形成金屬導線與介層窗。 由於採用雙重金屬職的方式’可以避免典型先形成介層 窗再形成金屬導線的方法在微影製財所面臨疊對誤差 (Overlay Error )與製程偏差（Pr〇cess Deviati〇n )的問題， 而使元件的可靠度增加，並且使製程能力提昇。因此，在 元件高度積集化之後，雙重金屬鑲嵌已逐漸成為半導體工 業所採用的一種技術。 但是’在對介電層進行餘刻以形成溝渠以及接觸窗開 口的過程巾，常制如氮化鈦等金屬材質料幕層作為钕 刻罩幕，朗氣财含有CxFy化合物，麵刻過程中會鍵 結形成長碳鏈聚合物，此長碳鏈聚合物衫或是長碳鍵聚 合物與被電輯擊$的金屬離子、其他反應氣體或光阻材 料所形成的聚合物會沈齡晶面。此外，祕刻結束 之後殘餘的氟會附著在晶圓表面與金屬罩幕層中金屬離 子反應㈣成如氟化鈦等氟化金屬。這魏合物及氟化金 5 026465 UMCD-2005-0S28 18213twf.d〇c/n 屬^殘留物會對元件的電性造成不良 兀件的效能’故必須在日進而降低 氟化金屬。 *進賴狀後，歸這些聚合物及 …習知技術巾有—種移除這些聚合物的 行濕式-乾式-渴式:主、、朱制 為依序進 • …式/月洗製程之三階段的清洗方法。第一呤 進仃的濕式清洗製程是 忐弟-人 面分離，而接著進杆^合物軟化並與晶圓表 丁的乾式清洗製程是將聚人物妈I /μ I後再進行第二次的 • 麸而，在戶…月洗衣耘以移除剩餘的聚合物。 ，、 在所進仃的濕式清洗製程中，所使主咮β 液為鹼性的_液，合所使用n谷 層造成破壞。胃對開σ所暴路之位於基底中的金屬 另方面，上述聚合物的移除方 力不佳，因此在進行== 二二以屬仍會殘留在晶圓上，而對元件的電性造 • p料細移除方為騎三階段的清洗製 鼸 私&步驟較為繁雜，會使產能受到限制。 【發明内容】 从·生於此本發明的目的就是在提供一種姓刻後晶圓 此’可有效移除姓刻後形成於晶圓表面上的聚合 物及虱化金屬。 本發明的再-目的是提供一種钱刻後晶圓的清洗方 法，可避免聚合物及氟化金屬等的殘留物對元件的電性造 成不良的影響，進而提升元件的效能。 6 1326465 UMCD-2005-0528 18213twf.doc/n 本發明提出一種蝕刻後晶圓的清洗方法，首先提供一 ϋ屬it依序形成有蝕刻終止層、介電層及圖案化 的金屬硬罩幕層，_化的金屬硬罩幕層定義 暴露出部侧終止層。接著，在通二氦 ㈣。仃’乾式關製程，以移除開口所暴露的 斟曰；#然後，以氮氣及氫氣的混合氣體作為反應氣1326465 UMCD-2005-0528 18213twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a method of cleaning a wafer, and more particularly to a method of cleaning a wafer after etching. [Prior Art] A damascene process is a technique in which a metal interconnect is skillfully embedded in an insulating layer. The method is based on the pattern of the conductors in the dielectric layer on the substrate, as well as the connection of the dielectric layer and the opening of the contact window. Then, a metal layer is deposited on the substrate to fill the trench window π to simultaneously form metal wires and vias. Due to the dual metal service method, the method of forming a via window and then forming a metal wire can avoid the problem of overlay error and process deviation (Pr〇cess Deviati〇n) in the lithography. This increases the reliability of the component and increases the process capability. Therefore, after the component is highly integrated, dual damascene has gradually become a technology used in the semiconductor industry. However, in the process of engraving the dielectric layer to form the trench and the opening of the contact window, a metal material such as titanium nitride is often used as the engraving mask, and the gas is contained in the CxFy compound. Will form a long carbon chain polymer, and the long carbon chain polymer shirt or long carbon bond polymer and the metal ion, other reaction gas or photoresist material formed by the electric shock will form a crystal surface. In addition, after the end of the secret, the residual fluorine adheres to the surface of the wafer and reacts with the metal ions in the metal mask layer (4) into a metal fluoride such as titanium fluoride. This fare and gold fluoride 5 026465 UMCD-2005-0S28 18213twf.d〇c/n genus residue will cause poor electrical properties of the component. Therefore, it is necessary to reduce the metal fluoride in the future. * After the advancing, these polymers and ... know-how technical towels have a kind of wet-dry-thirsty type to remove these polymers: the main, the Zhu system is in order to enter the system / month wash process The three-stage cleaning method. The first wet cleaning process is the separation of the younger brother-human face, and then the softening of the rod and the dry cleaning process with the wafer is the second step of the group of people I / μ I The second • bran, in the household... month laundry to remove the remaining polymer. In the wet cleaning process that is carried out, the main 咮β liquid is made alkaline, and the n-layer is used to cause damage. The metal in the base of the sigma of the stomach is different from the metal in the substrate. The removal force of the above polymer is not good. Therefore, the ============================================================ • The fine removal of p material is a complicated process for riding a three-stage cleaning system, which limits the production capacity. SUMMARY OF THE INVENTION The object of the present invention is to provide a polymer which is formed on the surface of a wafer and which is effective in removing the wafer after the last name. A further object of the present invention is to provide a method for cleaning wafers after engraving, which can prevent the effects of residues of polymers and fluoride metals on the electrical properties of the components, thereby improving the performance of the components. 6 1326465 UMCD-2005-0528 18213twf.doc/n The present invention provides a method for cleaning a wafer after etching, which firstly provides an etch stop layer, a dielectric layer and a patterned metal hard mask layer. The _ metal hard mask layer defines the exposed side termination layer. Then, in the second pass (four).仃 'dry process to remove the 暴露 exposed by the opening; # Then, a mixed gas of nitrogen and hydrogen is used as the reaction gas
微量氫氟_清洗溶液對晶圓表面進行—個二清= 依照本發明的— 圓的清洗方法中， 100〜500sccm。 較佳實施例所述，在上述之钱刻後晶 於乾式餘刻製程中氦氣的流量為 =本發明的—較佳實施顺述，在上述種刻後晶 1的’月’方法中，乾式糊製㈣反應氣购如是含氟氣A trace amount of hydrofluoric-cleaning solution is applied to the surface of the wafer - in the round cleaning method, 100 to 500 sccm. In the preferred embodiment, the flow rate of helium in the dry-engraving process is as follows: in the 'month' method of the above-described seed crystal 1 Dry paste (4) reaction gas purchase if it is fluorine-containing gas
,本發明的—較佳實施例所述’在上述之餘刻後晶 ®如洗方法中’含氟氣體例如是選自cf4、C2F6、C3F8、 C4F8 c5f8、chf3其中之—或是二種(含)以上的混合氣體。 於乾式清洗製程中氫氣的流量大於氮氣 依照本發明的—較佳實施例所述，在上述之餘刻後晶 圓的清洗方法中 的流量。 。依?、?、本發明的一較佳實施例所述’在上述之蝕刻後晶 圓的清?方法中，氫氣的流量為40。〜12G〇sccm。 依照本發明的一較佳實施例所述，在上述之蝕刻後晶 7 1326465 UMCD-2005-0528 18213twf.doc/n 圓的清洗方法t，氮氣的流量為2〇〇〜6〇〇sccm。 依照本發明的-較佳實施例所述，在上述之侧後晶 圓的清洗方法中’清洗溶液例如是酸性溶液或鹼性溶液。 依照本發明的-較佳實施例所述，在上述之钮刻後晶 圓的清洗方法中’酸性溶液例如是有機酸溶液、無機酸溶 液或是有機酸溶液與無機酸溶液的混合溶液。 。依照本發明的-較佳實施例所述，在上述之姓刻後晶 圓的清洗方法中’無機酸性溶液例如是選自硫酸溶液、鹽 酸溶液、磷酸溶液及硝酸溶液其中之一或是二種(含)以上 的混合溶液。 依照本發明的-較佳f施例所述，在上述之姓刻後晶 圓的清洗方法中，鹼性溶液例如是含胺溶液。 依照本發明的一較佳實施例所述，在上述之蝕刻後晶 圓的清洗方法中，乾式清洗製程是以原位(in situ)的方式在 乾式餘刻製程之後進行。 依照本發明的一較佳實施例所述’在上述之蝕刻後晶 圓的清洗方法中，圖案化的金屬罩幕層的材質例如是氮化 鈦、氮化組、鈦或组。 依照本發明的一較佳實施例所述，在上述之蝕刻後晶 圓的清洗方法中，開口包括由溝渠及接觸窗開口所組成。 本發明&出一種姓刻後晶圓的清洗方法，首先提供一 基底，基底上已依序形成有介電層及圖案化的金屬硬罩幕 層，圖案化的金屬硬罩幕層定義出介電層中的開口。接著， 以氮氣及氫氣的混合氣體作為反應氣體，對晶圓表面進行 8 1326465 UMCD-2005-0528 18213twf.doc/n 一個乾式清洗製程。^，时有微量氫氟酸的清洗溶液 對晶圓表面進行一個濕式清洗製程。 由於本發明所提出之侧後晶圓的清洗方法是以含有 微量氫氟_清洗溶㈣晶面騎清洗，可有效移除 形成，晶圓表面上的聚合物及氟化金屬，因此能避免聚合 物及氟化金屬等殘留物對元件的電性造成不㈣影響，進 而提升元件的效能。 此外，在所進行的濕式清洗製程中，當所使用的蝕刻 液為酸性的清洗溶液時，可避免清洗溶液對開口所暴露之 位於基底中的金屬層造成破壞。 此外’本發明所提出之蝕刻後晶圓的清洗方法為進行 乾式-濕式清洗製程之二階段清洗方法，可有效縮短製造流 程’進行而提升產能。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 圖1A〜圖1B所繪示為本發明一實施例之蝕刻後晶圓 的清洗流程剖面圖。 首先’請參照圖1A ’提供基底1〇〇，且基底100中例 如是具有金屬層101，用以作為導線或電極使用。基底1〇〇 上已依序形成有钱刻終止層102、介電層104及圖案化的 金屬硬罩幕層106，圖案化的金屬硬罩幕層106定義出介 電層104中的開口 1〇8，且開口 108暴露出部分蝕刻終止 9 1326465 UMCD-2005-0528 18213twf.doc/n 層102。基底100例如是矽基底。蝕刻中止層1〇2的材質 例如是氮碳化矽、氮化矽及其它適當材質。介電層1〇4的 材質例如是低介電常數材料，如氟化非晶碳(flu〇rinated amorphous carbon)、摻碳氧化矽（carb〇n d〇ped oxide)、 Parylene AF4、PAE或Cyclotene等。圖案化的金屬硬罩幕 層106的材質例如是氮化鈦、氮化钽、鈦或鈕等材質。開 口 108例如是由溝渠i〇8a與接觸窗開口 1〇8b所組成，但 並不用以限制本發明。此外，更可於介電層1〇4與圖案化 的金屬硬罩幕層106之間形成氧化層11〇。氧化層11〇的 材，例如是以四乙氧基矽烷(TE〇s)為反應氣體源所形成 的氧化石夕。而上述钱刻终止層1〇2、介電層1〇4、圖案化的 金屬硬罩幕層106及氧化層u〇的形成方法為於此技術領 域具有通常知識者所周知，故於此不再贅述。 接著，在通入氦氣的環境中進行一個乾式蝕刻製程， 以移除開口所暴露的钱刻終止層逝，並暴露出位於基底 100中的金屬層101。於乾式姓刻製程中，魏的流量約為 100〜50〇sccm。乾式蝕刻製程的反應氣體例如是含氟氣 含氟氣體可為選自 cf4、(:2f6、(:3ρ8、(：4ρ8、(：5ρ8、α^3 〃中之或疋一種(含）以上的混合氣體。含氟氣體的流量 例如是150sccm。 在進行蝕刻製程以形成開口 1〇8的過程中，蝕刻氣體 中所含的長碳鏈聚合物本身或是長碳鏈聚合物與被電漿所 擊出的金屬離子、其他反應氣料卿聚合物112會 沈積在晶圓表面。此外，在_結束之後，殘餘的氣會附In the above-mentioned preferred embodiment, the fluorine-containing gas is, for example, selected from the group consisting of cf4, C2F6, C3F8, C4F8 c5f8, and chf3, or two of them (in the above-mentioned preferred embodiment). Mixed gas containing more than). The flow rate of hydrogen in the dry cleaning process is greater than that of nitrogen. According to the preferred embodiment of the present invention, the flow rate in the cleaning method of the crystal after the above-mentioned afterglow. . According to a preferred embodiment of the present invention, in the above-described etching method for etching the crystal, the flow rate of hydrogen gas is 40. ~12G〇sccm. According to a preferred embodiment of the present invention, in the above-described etching method 7 1326465 UMCD-2005-0528 18213twf.doc/n round cleaning method t, the flow rate of nitrogen gas is 2 〇〇 6 〇〇 sccm. According to the preferred embodiment of the present invention, in the above-described side cleaning method, the cleaning solution is, for example, an acidic solution or an alkaline solution. According to the preferred embodiment of the present invention, the acidic solution is, for example, an organic acid solution, an inorganic acid solution or a mixed solution of an organic acid solution and a mineral acid solution in the above-described cleaning method of the button after the crystal. . According to a preferred embodiment of the present invention, in the above-described method for cleaning a wafer after the engraving, the inorganic acidic solution is, for example, one or two selected from the group consisting of a sulfuric acid solution, a hydrochloric acid solution, a phosphoric acid solution, and a nitric acid solution. Mixed solution of (inclusive) or more. According to the preferred embodiment of the present invention, in the above-described cleaning method of the post-etching crystal, the alkaline solution is, for example, an amine-containing solution. In accordance with a preferred embodiment of the present invention, in the above-described etched wafer cleaning method, the dry cleaning process is performed in situ after the dry remnant process. According to a preferred embodiment of the present invention, in the above-described etching method for etching a crystal, the material of the patterned metal mask layer is, for example, titanium nitride, nitrided group, titanium or a group. According to a preferred embodiment of the present invention, in the above-described etching method for etching a wafer, the opening comprises a trench and a contact opening. The present invention provides a method for cleaning a wafer after the first name, first providing a substrate on which a dielectric layer and a patterned metal hard mask layer are sequentially formed, and a patterned metal hard mask layer is defined. An opening in the dielectric layer. Next, a dry cleaning process of 8 1326465 UMCD-2005-0528 18213 twf.doc/n is performed on the surface of the wafer using a mixed gas of nitrogen and hydrogen as a reaction gas. ^, a trace solution of hydrofluoric acid is used to perform a wet cleaning process on the wafer surface. Since the side wafer cleaning method proposed by the present invention is washed by containing a trace amount of hydrofluoric-cleaning (four) crystal plane, the polymer and the metal fluoride formed on the surface of the wafer can be effectively removed, thereby avoiding polymerization. Residues such as substances and fluoride metals do not affect the electrical properties of the components, thereby improving the performance of the components. Further, in the wet cleaning process performed, when the etching liquid used is an acidic cleaning solution, the cleaning solution can be prevented from causing damage to the metal layer in the substrate exposed by the opening. Further, the cleaning method of the etched wafer proposed by the present invention is a two-stage cleaning method for performing a dry-wet cleaning process, which can effectively shorten the manufacturing process and increase the productivity. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] FIG. 1A to FIG. 1B are cross-sectional views showing a cleaning process of an etched wafer according to an embodiment of the present invention. First, the substrate 1 is provided with reference to Fig. 1A, and the substrate 100 has, for example, a metal layer 101 for use as a wire or an electrode. A patterned encapsulating layer 102, a dielectric layer 104 and a patterned metal hard mask layer 106 are sequentially formed on the substrate 1 , and the patterned metal hard mask layer 106 defines an opening 1 in the dielectric layer 104 . 〇8, and the opening 108 exposes a portion of the etch stop 9 1326465 UMCD-2005-0528 18213 twf.doc/n layer 102. The substrate 100 is, for example, a crucible substrate. The material of the etch stop layer 1 〇 2 is, for example, niobium carbide niobium, tantalum nitride, and other suitable materials. The material of the dielectric layer 1〇4 is, for example, a low dielectric constant material such as flu〇rinated amorphous carbon, carb〇nd〇ped oxide, Parylene AF4, PAE or Cyclotene. . The material of the patterned metal hard mask layer 106 is, for example, a material such as titanium nitride, tantalum nitride, titanium or a button. The opening 108 is composed of, for example, a trench i〇8a and a contact opening 1〇8b, but is not intended to limit the present invention. Further, an oxide layer 11 is formed between the dielectric layer 1〇4 and the patterned metal hard mask layer 106. The material of the oxide layer 11 is, for example, a oxidized stone formed by using tetraethoxy decane (TE〇s) as a reaction gas source. The method of forming the memory stop layer 1 2, the dielectric layer 1〇4, the patterned metal hard mask layer 106, and the oxide layer u〇 is well known to those skilled in the art, so Let me repeat. Next, a dry etching process is performed in an atmosphere in which helium is introduced to remove the exposure of the opening to terminate the layer and expose the metal layer 101 in the substrate 100. In the dry-type process, Wei's flow rate is about 100~50〇sccm. The reaction gas of the dry etching process, for example, the fluorine-containing gas containing fluorine gas may be selected from the group consisting of cf4, (:2f6, (:3ρ8, (:4ρ8, (:5ρ8, α^3 〃 or 疋 one or more) The mixed gas. The flow rate of the fluorine-containing gas is, for example, 150 sccm. In the process of performing the etching process to form the opening 1〇8, the long carbon chain polymer contained in the etching gas itself or the long carbon chain polymer and the plasma are The hit metal ions and other reaction gases are deposited on the surface of the wafer. In addition, after the end of _, the residual gas will be attached.
丄仔UJ UMCD-2005-0528 18213twf.doc/n ^晶圓表面與圖案化的金屬硬罩幕層觸中金屬 應而形成如氟化鈦等氟化金屬114。 的除開口所暴露的餘刻終止層1〇2所進行 的乾式餘刻製程中，會通入氦氣 丁 應腔室内的氟，因此可^戰乱(Cai：rygaS)▼走反 屬離避免氟與圖案化的金屬硬罩幕層106中全 屬離子反應而形成氟化金屬114。 甲金 然後’睛參照圖1 B，以fj齑；^ AT严^ 應氣體，對晶圓表面進行混合氣體作為反 112 (..來口物112。乾式清洗製程是以屌付 (m-Sltu)的方式在乾式_製程之後 2 空環境的情況下進行。㈣/'卩在不破屐真 於氮氣的流量。但氫氣盘氮程，虱氣的流量大 轧孔，、氮莉^的>巩篁比例如是2 :丨。丄仔UJ UMCD-2005-0528 18213twf.doc/n ^The wafer surface and the patterned metal hard mask layer touch the metal to form a fluoride metal 114 such as titanium fluoride. In the dry remanufacturing process carried out by the residual layer 1〇2 exposed by the opening, the fluorine in the chamber of the helium gas chamber is introduced, so that it can be avoided (Cai:rygaS) Fluorine reacts with all of the patterned metal hard mask layer 106 to form fluoride metal 114. A gold then 'eyes' with reference to Figure 1 B, fj齑; ^ AT strict gas, the surface of the wafer is mixed with gas as anti-112 (.. to the mouth 112. Dry cleaning process is to pay (m-Sltu The method is carried out in the case of 2 dry environments after the dry process. (4) / '卩 is not breaking the flow rate of nitrogen. But the hydrogen disk nitrogen process, the flow rate of helium gas, the large rolling hole, the nitrogen lily ^ > The Gong Li ratio is, for example, 2: 丨.
=:如是.一氮氣的流量範圍C 行一 = 有微量氫氟酸的清洗溶液對晶圓表面進 j 程。清洗溶液例如是酸性溶液或驗性溶 液。酸性减例如是有魏雜、域酸絲或 二 溶=無機麟_混合溶液。無機酸性溶_如是^ 硫酸浴液、贿溶液、魏職及俩溶液巧之β 上的混合溶液。鹼性溶液例如是含胺溶液:Ξ 二但在驗贿液有破壞位於基底⑽中的金屬^= 考里之下，較佳的是使用酸性溶液作為清洗溶液。 11 UMCD.2005-0528 182l3twfd〇c/n 移除溶液中含有微量的氫氟酸’因此除了可以 ，後，可以避免於晶圓上所形成的聚 及帝性b金屬114等殘留物對元件的輪廓(Pr0flle) 方二，：：'外，本發明所提出之蝕刻後晶圓的清洗 短ίΐϊΓ 式清洗製程之二階段清洗方法，可以縮 紐衣，進而提升產能。 圖2為習知對細終止層進行钱刻後表面輪廊的昭片 =圖3林發明雜_止層進行侧後表面輪靡的照 月圖。 、 。請，照圖2,在習知的對姓刻終止層所進行的餘刻製 ，中並沒有軌絲’在賴結束讀，殘制氟沈積在 曰曰圓表面上’與金屬硬罩幕層中的金屬反應形成氣化金 ，。因此’可峨® 2巾清楚地看躲^^輪廊有許多由 氟化金屬所形成的凸出物。 請參照圖3,在本發明的對蝕刻終止層所進行的蝕刻 製程中，會通入氦氣作為載氣帶走反應腔室内的氟，可二 減少殘餘的氟會附著在晶圓表面，能減少甚至避免氟與金 屬罩幕層中金屬離子反應而形成氟化金屬。因此，可=從 圖3中清楚地看到於表面輪廓非常平整，幾乎沒有產生任 何由氟化金屬所形成的凸出物。 综上所述，本發明至少具有下列優點： 1.本發明所提出之蝕刻後晶圓的清洗方法是以含有微 量氫氟酸的清洗溶液對晶圓表面進行清洗，可有效移除带 12 1326465 UMCD-2005-0528 18213twf.doc/n 成於晶圓表面上的聚合物及氟化金屬。 2^本發明所提出之蝕刻後晶圓的清洗方法能避免聚合 物及氟化金屬等殘留物對元件的電性造成不良的影響進 而提升元件的效能。 曰 主3.在本發明所提出之蝕刻後晶圓的清洗方法中當濕 j清洗製程所使用的蝕刻液為酸性的清洗溶液時，可^免 /月洗溶液對開口所暴露之位於基底中的金屬造成破壞。 4_本發明所提出之#刻後晶圓的清洗方法為進行乾式 ^式清洗製程之二階段清洗綠，可有雌短製造流程， 運仃而提升生產效能。 雖然本發明已以較佳實施例揭露如上，然其並非用以 =發明任何熱習此技藝者’在不脫離本發明之精神 巳圍内’當可作些許之更動與潤掷，因此本之保 ，圍當視後附之申料種騎衫者為準。 【圖式簡單說明】 ? 圖1B所繪示為本發明一實施例之蝕刻後晶圓 的凊洗流程剖面圖。 圈 圖2為省知對餘刻終止層進行钱刻後表面輪靡的照片 片圖圖3為本發明對餘刻終止層進行餘刻後表面輪廓的照 【主要元件符號說明】 100 ’·基底 101 :金屬層 13 1326465 UMCD-2005-0528 18213twf.doc/n 102 :蝕刻終止層 104 :介電層 106:圖案化的金屬硬罩幕層 108 :開口 108a :溝渠 108b :接觸窗開口 110 :氧化層 112 :聚合物 114 :氟化金屬=: If yes. A nitrogen flow range C line trace solution of hydrofluoric acid is applied to the wafer surface. The cleaning solution is, for example, an acidic solution or an assay solution. The acid reduction is, for example, a mixture of Wei, domain acid or di-soluble = inorganic lin. Inorganic acid solution _ such as ^ sulfuric acid bath, bribe solution, Wei and the solution of the two solutions on the β. The alkaline solution is, for example, an amine-containing solution: Ξ 2. However, in the case where the test-briking fluid destroys the metal located in the substrate (10), it is preferred to use an acidic solution as the cleaning solution. 11 UMCD.2005-0528 182l3twfd〇c/n removes traces of hydrofluoric acid from the solution'. Therefore, in addition to the residue, it can avoid the formation of residues on the wafer and the residue of the metal b 114. Contour (Pr0flle) square two, ::: In addition, the two-stage cleaning method of the etched wafer after the etching process proposed by the present invention can be used to shrink the new clothes, thereby increasing the productivity. Fig. 2 is a diagram showing the surface of the rear wheel rim of the finely-finished layer. , . Please, according to Figure 2, in the conventional engraving system for the surname end layer, there is no rail wire at the end of the reading, residual fluorine deposition on the round surface 'with the metal hard mask layer The metal in the reaction forms a gasification gold. Therefore, the 'Codon® 2 towel clearly sees that there are many protrusions formed of fluorinated metal. Referring to FIG. 3, in the etching process for the etch stop layer of the present invention, helium gas is introduced as a carrier gas to carry away fluorine in the reaction chamber, which can reduce residual fluorine to adhere to the surface of the wafer. Reducing or even avoiding the reaction of fluorine with metal ions in the metal mask layer to form a metal fluoride. Therefore, it can be clearly seen from Fig. 3 that the surface profile is very flat, and almost no projections formed of the metal fluoride are generated. In summary, the present invention has at least the following advantages: 1. The cleaning method of the etched wafer proposed by the present invention is to clean the surface of the wafer with a cleaning solution containing a trace amount of hydrofluoric acid, which can effectively remove the strip 12 1326465 UMCD-2005-0528 18213twf.doc/n Polymers and fluoride metals formed on the surface of wafers. 2^ The cleaning method of the etched wafer proposed by the present invention can prevent the residue of the polymer and the metal fluoride from adversely affecting the electrical properties of the component, thereby improving the performance of the component. In the cleaning method of the etched wafer proposed by the present invention, when the etching liquid used in the wet cleaning process is an acidic cleaning solution, the exposed/monthly washing solution is exposed to the opening in the substrate. The metal caused damage. 4_ The cleaning method of the #刻刻 wafer proposed by the invention is a two-stage cleaning green for the dry type cleaning process, and the female short manufacturing process can be carried out to improve the production efficiency. Although the present invention has been disclosed above in the preferred embodiments, it is not intended to be used in the art of the invention, and it is possible to make a few changes and refinements without departing from the spirit of the invention. Bao, the vests attached to the appendages are subject to the vest. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1B is a cross-sectional view showing the rinsing process of an etched wafer according to an embodiment of the present invention. FIG. 2 is a photograph of a surface rim of a surface engraving after the engraving of the residual engraving layer. FIG. 3 is a photograph of the surface contour of the remaining engraved layer after the engraving of the invention. [Main component symbol description] 100 '·substrate 101: metal layer 13 1326465 UMCD-2005-0528 18213twf.doc/n 102: etch stop layer 104: dielectric layer 106: patterned metal hard mask layer 108: opening 108a: trench 108b: contact window opening 110: oxidation Layer 112: Polymer 114: Fluorinated metal