1322062 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種化學機械研磨之研磨頭及其製作方法，尤指 一種在薄膜支撐座之周邊區設置導流開口之化學機械研磨之研磨 頭及其製作方法。 【先前技術】 化學機械研磨(chemical mechanical polishing，CMP)係用來平坦 化一半導體晶圓之積體電路的表面，使得在平坦化之表面上可製 作多層導線連線，而形成高密度之電路連線。一般而言，化學機 械研磨主要被應用在導線層間介電層(inter_layer didectdc，ILD)、 連接插塞(plug)、淺溝隔離(shallow trench isolation，STI)與鑲嵌结構 的製作上。 請參考第1圖。第1圖為習知一化學機械研磨機台之示意圖。 如第1圖所示，化學機械研磨機台包含有一轉動平台(platen)i〇、 一研磨墊(poliShPad)12貼附於轉動平台1〇之表面並可與轉動平台 ίο作同步旋轉…研磨祕供應帥uny supply)14用以供應研磨 ^1416至研磨塾12上’以及—研磨頭(head)2()用以蚊—晶圓⑻ 於進行化學機械研磨時，晶圓18係置放於研磨頭2〇與研磨塾 12之間，而研磨頭20會對晶圓18施加勤並帶動晶圓18轉動使 a曰圓18與研磨塾η之間產生機械研磨的作用，而同時研磨裝料 16亦會與晶圓18上所欲平坦化之材料層發生化學作用產生化學 研磨的作用，觀進行化學機械研磨。 明繼續參考第2圖’並請—併參考第1圖。第2 ®習知化學機 械研磨之研磨碩2G之示意圖。如2圖所示，習知化學機械研磨之 研磨頭20包含有一薄膜(111_職)22位於晶圓18上、一薄膜支 #l(membrane support)24、一支撐塾％設於薄膜22與薄膜支樓 座24之間’以及一拘束環㈣如環繞於薄膜^、支樓 塾26薄膜支撑座24與晶圓18之外圍。薄膜支撐座μ上設置有 複數個通氣孔3G、蚊料26上亦具有減狀細32，以容 許氣體通過。 明參考第3圖。第3圖為習知化學機械研磨之研磨頭2〇於進 行化學機械研磨時之示意圖。如第3圖所示，於進行化學機械研 磨時’將氣體經由薄膜支樓座24之通氣孔3〇與支撑墊26之孔洞 32/主入研磨頭2〇内，此時由彈性材質構成的薄膜22會受到氣體 的壓力推擠而向下延伸，而對位於其下的晶圓18施加壓力。 對於化學機械研磨而言，材料層的均勻度攸關後續製程的良率 與欲裝作元件的可罪度，而纟中在化學機械研磨的過程中研磨頭 20能否對晶圓18施加均衡的壓力為決定均勻度的重要關鍵。 在習知研磨頭20的結構設計上，由於薄膜支撐座24之通氣孔 30的位置係設置於薄膜支撐座24的中央區，而在其周邊區並未設 置有任何開口，因此在進行化學機械研磨時注入研磨頭2〇的氣體 1322062 刀子在溥膜22的周邊區内的特定區域的碰撞頻率較其它區域為 高，故會產生較大的壓力(如第3圖所標示之區域八）。一旦上述壓 力不均的狀況產生，會使得化學機械研磨的研磨速率分佈不均1坚 而導致均勻度不佳。 =’ 、，請參考第4圖。第4醜示了利用習知化學機械研磨之研 平坦化晶圓上-材料層所量測出之—厚度分佈圖，其中在本測^ 中係以-位於8忖晶圓上厚度為n_埃之氧化層為對象，= 60秒之化學機械研磨後所獲得之厚度分佈狀況。如第4圖所示γ 在經歷化學機械研磨之後，在晶圓上財央區·巾氧化層之厚戶大 致由_〇埃縮減為7300埃左^，顯示化學機械研磨^中=且 ^良好的-雜’但在晶_周邊區中氧化層的厚度卻明顯地較 ，在W晶圓距圓心處㈣毫米的區域），顯示在周邊區的研 磨速度在此處較快，此-過度研磨的現象一般稱為細b㈣效 應’為化學機械研磨中常見之問題。 由於fast band效應會使得晶圓之周邊區的均勾度不佳麼 化學機械研磨的良率與後續製作元件的可靠度，因此如何避免^ band效應的發生’以提升化學機械研磨的良率為平坦化製程中一 重要課題。 【發明内容】 7 為達上述目的，本發明提供一種化學機械研磨之研磨頭，包含 有-薄膜支雜與-_。_支撑觸為碟片形，其具有一第3 -表面、H面與—介於該第一表面與該第二表面之間的環 側壁，且另具有至少-通氣孔與至少—導流開σ。上述薄膜支撐 座具有-圓心及-雜R，❿薄膜支撐座包含有一中央區位於^ 圓心距離(2/3)R以内之區域’以及一周邊區位於距圓心(2/3)r至r 之區域，且通氣孔係位於中央_，而導流開口係位於周邊區之 内0 由於本發明之化學機械研磨之研磨頭具有導流開口的設計，因 此可使注人研_的氣體壓力均勻分布，進而提升化學機械研磨 的均勻性。 ^為了使貴審查委員能更近一步了解本發明之特徵及技術内 奋，凊參閱町有關本發明之詳細綱與附圖。然⑽附圖式僅 供參考與輔助說棚，並制來對本發明加以限制者。 【實施方式】 @ 參考第5圖與第6圖。第5圖與第6圖為本發明-實施例化 學機，研磨之研磨頭之示意圖，其中第5圖為-上視圖，第6圖 :1面示思、圖。如第5圖與第6圖所示，本實施之化學機械研 之研磨頭主要包含有—薄膜支樓座5Q、—薄膜％與—設於薄膜 5切座50與_ 70之間用於緩衝壓力之支雜8〇。薄膜支禮座 係為一由實質上為剛性材質構成之碟片形(disk sh叩以)結構其 ”有第表面5〇a、一第二表面5〇b與一介於第一表面5〇a與第 -表面50b之間的環側壁5此。薄膜支掉座％並具有一圓心〇及 半咎R其中圓心〇與(2/3)R之圓形區域定義為中央區％，而 (2/3)R至R之環形區域定義為周邊區M。薄膜支撐座％之第二表 面50b具有-扣合槽56，容許薄膜7〇之扣合。薄膜支樓座知另 具有至少一通氣孔58、至少-導流開口(diversi〇n〇pening)6〇與複 數個螺絲孔62，而支撐墊8G則具謂應於通氣孔％與導流開口 60之孔洞82 ’其中通氣孔58係位於中央區52之内導流開口恥 與螺絲孔62係位於周輕M之内。通纽％制贿注入研磨 頭之氣體通過，以於進行化學機械研糾#開_7()，導流開口 60的作用改變氣體分子在周邊區％的碰撞方式，避免氣體分子與 周邊區54的碰撞頻率過高而產生fastband效應，而螺絲孔&則 係用以使螺絲(圖未示)可將研磨頭之其它構件與薄臈支撐座5〇結 合0 另一方面，薄膜70係由彈性材質構成，其包含有一碟片形主 體口卩72，s史置於薄膜支撐座5〇之第一表面5〇a、一環狀包覆部％ 包覆薄膜支撐座50之環側壁50c，以及一扣合凸緣76，設於薄膜 支撐座50之第二表面50b並嵌合於扣合槽56之内，藉此薄膜7〇 於進行化學機械研磨時不致脫落。 凊參考第7圖。第7圖為本實施例之研磨頭於進行化學機械研 磨時之示意圖。如第7圖所示，氣體會灌入通氣孔58與導流開口 6〇 ’而氣體分子會使得具彈性的薄膜70擴張以推擠晶圓（圖未 丄以062 不）’此時在薄膜支樓座50與薄膜70之間會形成一空間。由於本 實施例之薄膜支樓座50在周邊區54設置有導流開口 6〇，因此氣 ，的流動雜會有所改變，使得氣體分子在周邊區％不會集中碰 '撞區域A，而有部分氣體分子的碰撞移轉到區域B，藉此薄臈7〇 .於進行化學機械研㈣受到的壓力贿會均勻。岐_7〇受到 的壓力較均勻，使得晶_均勻度也會有所提升。 •。在本實施例+ ’薄膜支撐座％於周邊區54之厚度係大於中央 區52之厚度，且導流開口 6〇的位置係以設在周邊區54中距圓心 〇之(4/3)R至R的環形區域為較佳，但不限於此。此外，本實施 …狀導流開口 60係為圓形開口，且以垂直第一表面的方向貫 •穿薄膜支擇座50 ’但其形狀、尺寸、設置位置、排列密度與貫穿 方向等參數可依實際狀況加以變更。 、 人只參考第8圖至第14圖。第8圖至第14圖顯示了本發明 ^研磨頭其它實施例之示意圖。其中為便於比較各實施例之異 :、實知例與上述實施例之相同元件使用相同之元件符號標 並僅針對相異處進行說明，而不再對相同部分作贊述。 或3第夕8圖與第9圖顯示了導流開口 60之形狀亦可為狹縫形開口 乂開口如六邊形開口，而導流開口 60的形狀仍可視效果 • 匕任何形狀，不為上述各實施例所限制。 - 第1〇圖龜；7,爸t •、…、了導流開口 60貫穿薄膜支撐座50的方向並不限 〜〇62 .=為垂直第一表面孤的方向，而亦可為與第一表面伽 之貝穿方向，如向外傾斜或向内傾斜之方向。 、 、帛11圖與第12 _示了導流如60不限定為封閉形開口， 、亦™彡麟触«座5〇之周_54之細(論h)，而缺口 .的形狀可為各御狀如三邊形或四邊形，使得_支撐座50且 - 如鋸齒狀的圓周。 • 帛13圖之實施例與第12圖類似，其不同之處在於第13圖之 導流開口 60為較長之缺口，且各缺口之深度已達到中央區^斑 周邊區54之交界處。 〃 第14圖顯示了導流開口 6〇的形狀設計亦不限於使用相同圖 案，而可混合使用不同之圖案設計。 • 請參料15目與第16圖。帛15圖料16圖係為本發明另一 實施例化學機械研磨之研磨頭之示意圖，其中第15圖為一上視 圖，第16圖為一剖面示意圖。與前述實施例不同之處在於本實施 例之研磨頭未設置有導流開口，而係於薄膜支撐座5〇之環侧壁 與/專膜之環狀包覆部74之間形成一間隙，使環側壁5〇c與環 狀包覆部74不互相接觸。如此一來，環侧壁5〇c與環狀包覆部％ 可形成一導流空間84，其亦可發揮導流作用而改變氣體分子的碰 - 撞方式。 ㈣= 述社要#_係分洲料軸σ與導流空_方式改 行轉n輕秘於社制而可視情況同 研：月參考第17圖’第17圖為本發明又-實施例化學機械 應用頭之示意圖。如第17圖所示，本實施例之研磨頭同時 w用了導灿開口 60與導流空間84的設計。 吻參考第18 ϋ。第18圖為本發日脱學機械研_之另施 例之示意圖。如第岡 圆如第18圖所不，研磨頭包含有一薄膜支標座如、一 f膜0與—位於薄臈支撐㈣與薄膜110之間的支料120。 臈支撐座9G包含有—支觸(διιρ_·)92，其1有一第一表 ’以及―支撐侧壁(，_)94，環繞 支沒碟92之外圍。支撐側壁94之剖面係為l型其包含有一第 支撐。附94a連結較鄕92之第二表面 面辑質上垂直，以及—第二支撐部件灿連結於卜、支第^ 件W ’且第—支樓部件_係向内侧方向延伸並與支樓碟％之 Γ本質上平行。支樓碟92另具有至少i氣孔96斑 至> -導w開π 98貫穿支撑碟92，料關98 碑 92上對應支撐側壁94之笛_ * y、叉符碟 94之第m 部件的位置。另外支樓侧壁 之第-支樓。附94b包含有複數個螺絲孔勘而 亦包含有對應通氣孔96與導流開口 98之孔洞122。 薄膜1K)包含有—制形主體部⑴，設置該支料％之 表面92a、-環狀包覆部m包覆支樓側壁％之第— 一 9如以及扣合部116扣合於支撐側壁舛上。 部件上對應細輸之第二支撐 亦可使氣體壓力分佈均勻二二化學機械研磨時 棱升化子機械研磨的均勻性。值得 方口 98 _狀、尺寸、設置位置排_與貫穿 數亦可如前述實施例所述作必要的變化，以達到較佳化 如=第叫第19圖顯示了第18圖之研磨頭的另-樣態。 二另第18圖之研磨頭不同處在於第19圖之支撑侧 另包3有-第三支樓部件94c連結於第二支撐部件94b上， 以及一第四狀部件94d連結於第三支撐料94e上 與第二支_4b本質上垂直，且第四支樓部件二 係向外侧方向延伸並本質上與第三支撐部件94c垂直。另外，螺 絲孔100的位置則係設於支撐側壁94之第四支撐部件如而 非第二支#部件94b上。 本發明亦提供_難作化學機械研磨之研_的方法。請再參 考第5圖與第6圖。如第5圖與第6圖所示，提供一薄膜支月樓座 ’其中_支撐座50係為則形，且其具有—圓心〇及一半徑 R，而薄膜續座5G包含有-中央區52位於圓心〇與距圓心(罐 之區域’以及一周邊54區位於距圓心〇之(2罐至 著於薄膜狀座50之巾央區52 _歧少—通氣孔％，°°並於周 邊區54内至少-導流開口 6〇。隨後再於薄膜支樓座％之第一表 面50a上貼附-支雜80，再將薄膜7〇與薄膜支撐座如結合， 13 步組合即可製作出化學機械研磨之研磨 並與其它必要元件作進一 頭。 機^?20圖。第20圖顯示了利用本發明之研磨職行化學 一後晶圓上-材料層所量測出之一厚度分佈圖。本測試係 1 一位於8忖晶圓上厚度為11〇〇〇埃之氧化層為對象分別利用 ^種不同之研磨頭設計進行6G秒之化學機械研磨後所獲得之厚度 y 刀佈狀況’其中五種研磨頭包含有： 又 參考基準.習知研磨頭； 第—種研磨頭：具1毫米之導流空間； 第二種研磨頭：於中央區之邊緣具有導流開口，導流開口之直 徑為3毫米； 第—種研磨頭.於周邊區具有導流開口，導流開口之直徑為6 毫米； 第四種研磨頭.具有3毫米之導流空間。 第20圖所示，與使用習知研磨頭的參考基準比較，包含第 種研磨頭、第三種研磨頭與第四種研磨麟可有效提升晶圓的 周邊區_氧化層在經歷化學機械研磨之後的厚度均勻性，顯示 了本發明之研磨頭的確可改善如band效應，而提升化學機械研 磨的均勻性。另—方蝴試結構亦顯示了將導流開口係設於中央 區而非周邊區内的第二種研磨頭無法提升化學機械研磨的均勾性。 综上所述’本發明之化學機械研磨之研磨頭利用導流開口或導 062 流空間的設計’可有效提升化學機械研磨的均姑。值得說明的 疋本發明之研磨頭並狐定於制在特定材料層或特定結構之化 學機械研磨，而可廣泛地翻絲作導線層間介電層、連接插塞、 淺溝隔離、鑲嵌結構或其它結構的製作上。 土 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖為習知一化學機械研磨機台之示意圖。 第2圖習知化學機械研磨之研磨頭如之示意圖。 第3圖為習知化學機械研磨之研磨頭於進行化學機械研磨時之 意圖。 第4圖顯示了利用習知化學機械研磨之研磨頭平坦化晶圓上 料層所量測出之—厚度分佈圖。 第5圖與第6圖為本發明一實施例化學機械研磨之研磨頭之示意 圖。 第7圖為本實施狀研_於進行化學機械研糾之示意圖。 ^圖至第14圖顯不了本發明之研磨頭其它實施例之示意圖。 圖與第.16圖係為本發明另一實施例化學機械研磨之研磨頭 之不意圖。 ^ :7圖為本發明又—實施例化學機械研磨之研磨頭之示意圖。 ^圖為本發學機械研磨頭之另—實施例之示意圖。 第B圖顯示了第18圖之研磨頭的另一樣離。 1322062 第20圖顯示了利用本發明之研磨頭進行化學機械研磨後晶圓上一 材料層所量測出之一厚度分佈圖。1322062 IX. Description of the Invention: [Technical Field] The present invention relates to a chemical mechanical polishing head and a manufacturing method thereof, and more particularly to a chemical mechanical polishing head provided with a flow guiding opening in a peripheral portion of a film supporting seat And its production method. [Prior Art] Chemical mechanical polishing (CMP) is used to planarize the surface of an integrated circuit of a semiconductor wafer so that a plurality of wiring lines can be formed on the planarized surface to form a high-density circuit. Connected. In general, chemical mechanical polishing is mainly used in the fabrication of inter-layer didectdc (ILD), connection plugs, shallow trench isolation (STI) and damascene structures. Please refer to Figure 1. Figure 1 is a schematic view of a conventional chemical mechanical polishing machine. As shown in Fig. 1, the chemical mechanical polishing machine table includes a platen plate, a polishing pad (poliShPad) 12 attached to the surface of the rotating platform 1 并可 and can rotate synchronously with the rotating platform ί... Supply handsome uny supply 14 is used to supply grinding ^1416 to polishing crucible 12' and - head 2 () for mosquito-wafer (8) for chemical mechanical polishing, wafer 18 is placed in the grinding Between the first 2 〇 and the polishing crucible 12, the polishing head 20 applies the dip force to the wafer 18 and drives the wafer 18 to rotate to cause mechanical grinding between the a circular circle 18 and the grinding ,η while grinding the charging material 16 It also chemically acts on the material layer to be flattened on the wafer 18 to produce a chemical polishing effect, and is subjected to chemical mechanical polishing. Continue to refer to Figure 2 and please - and refer to Figure 1. Schematic diagram of grinding 2G of 2nd conventional chemical mechanical grinding. As shown in FIG. 2, the conventional chemical mechanical polishing head 20 includes a film (111) 22 on the wafer 18, a film support 24, and a support 塾% disposed on the film 22 and Between the film support blocks 24 and a restraining ring (four), such as surrounding the film, the support 塾 26 film support 24 and the periphery of the wafer 18. The film support base μ is provided with a plurality of vent holes 3G, and the mosquito material 26 also has a reduced shape 32 to allow gas to pass therethrough. See Figure 3 for details. Figure 3 is a schematic view of a conventional chemical mechanical polishing head 2 for chemical mechanical polishing. As shown in Fig. 3, during the chemical mechanical polishing, the gas is passed through the vent hole 3 of the film support base 24 and the hole 32 of the support pad 26/mainly into the polishing head 2, which is composed of an elastic material. The film 22 is pushed downward by the pressure of the gas to apply pressure to the wafer 18 underneath. For chemical mechanical polishing, the uniformity of the material layer is critical to the yield of the subsequent process and the suspicion of the component to be mounted, and whether the polishing head 20 can balance the wafer 18 during the chemical mechanical polishing process. The pressure is an important key to determining uniformity. In the structural design of the conventional polishing head 20, since the position of the vent hole 30 of the film supporting seat 24 is disposed in the central portion of the film supporting seat 24, and no opening is provided in the peripheral portion thereof, chemical mechanical processing is performed. The gas 1322062 injected into the polishing head 2 during the grinding process has a higher collision frequency in a specific region in the peripheral region of the diaphragm 22 than in other regions, so that a large pressure is generated (such as the area indicated in Fig. 3). Once the above-mentioned condition of uneven pressure is generated, the distribution of the polishing rate of the chemical mechanical polishing is uneven, resulting in poor uniformity. =’ , please refer to Figure 4. The fourth ugly shows the thickness profile of the flattened wafer-material layer measured by conventional chemical mechanical polishing, in which the thickness is n_ on the 8 忖 wafer. The oxide layer of angstrom is the object, and the thickness distribution obtained after chemical mechanical polishing of 60 seconds. As shown in Fig. 4, after undergoing chemical mechanical polishing, the thickness of the oxide layer in the financial district and the towel on the wafer is roughly reduced from _ 〇 埃 to 7300 Å left ^, showing chemical mechanical polishing ^ and ^ good -the difference in the thickness of the oxide layer in the peripheral region of the crystal is significantly higher, in the region of the wafer (four millimeters from the center of the W), the polishing rate in the peripheral region is faster here, this - excessive grinding The phenomenon is generally referred to as the fine b (four) effect 'as a common problem in chemical mechanical polishing. Since the fast band effect will make the peripheral area of the wafer unsatisfactory, the yield of chemical mechanical polishing and the reliability of subsequent fabrication components, how to avoid the occurrence of ^ band effect 'to improve the yield of chemical mechanical polishing An important issue in the flattening process. SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a chemical mechanical polishing head comprising a film-doped and -_. The support contact is in the shape of a disc having a third surface, a H-face and a ring sidewall between the first surface and the second surface, and further having at least a venting opening and at least a diversion opening σ. The film support seat has a center and a -hesion R, and the ruthenium film support base includes a region in which the central region is located within a distance (2/3) R from the center, and a peripheral region is located at a distance from the center of the circle (2/3) r to r. And the vent hole is located in the center _, and the flow guiding opening is located in the peripheral area. 0 Since the CMP of the CMP is designed to have a flow guiding opening, the gas pressure of the injection can be evenly distributed. Thereby improving the uniformity of chemical mechanical polishing. In order to enable the reviewing committee to gain a closer look at the features and technical advantages of the present invention, reference is made to the detailed description and drawings of the present invention. However, the drawings (10) are for reference only and are intended to be illustrative of the invention. [Embodiment] @ Refer to Fig. 5 and Fig. 6. Fig. 5 and Fig. 6 are schematic views showing the polishing head of the polishing machine according to the embodiment of the present invention, wherein Fig. 5 is a top view, and Fig. 6 is a view showing a surface. As shown in Fig. 5 and Fig. 6, the chemical mechanical grinding head of the present embodiment mainly comprises a film support base 5Q, a film % and a film between the cut pieces 50 and 70 of the film 5 for buffering. The pressure is mixed with 8 〇. The film support is a disk-shaped structure composed of a substantially rigid material having a first surface 5〇a, a second surface 5〇b and a first surface 5〇a The ring side wall 5 between the first surface 50b and the first surface 50b. The film supports the % of the seat and has a center 〇 and a half 咎R where the circular area of the center 〇 and (2/3) R is defined as the central area %, and (2 /3) The annular region of R to R is defined as the peripheral region M. The second surface 50b of the film support seat has a snap-fit groove 56 that allows the film 7 to be snapped together. The film support block has at least one vent 58 At least - diversi〇n〇pening 6〇 and a plurality of screw holes 62, and the support pad 8G has a hole 82 in the vent hole % and the diversion opening 60, wherein the vent hole 58 is located at the center Within the area 52, the diversion opening shame and the screw hole 62 are located within the circumference of the light M. The Tongnu% bribe is injected into the grinding head to pass the gas for chemical mechanical research and correction #开_7(), the diversion opening 60 The action changes the collision mode of the gas molecules in the peripheral region, and avoids the collision frequency of the gas molecules and the peripheral region 54 to generate a fastband effect. The screw hole & is used to make the screw (not shown) can combine the other components of the polishing head with the thin support 5 另一方面. On the other hand, the film 70 is made of an elastic material, and includes a disc-shaped body. The mouth 72, s history is placed on the first surface 5〇a of the film support 5〇, an annular cover part% of the ring side wall 50c of the cover film support seat 50, and a fastening flange 76, which is disposed on the film The second surface 50b of the support base 50 is fitted into the fastening groove 56, so that the film 7 does not fall off when performing chemical mechanical polishing. 凊 Refer to FIG. 7. FIG. 7 is the polishing head of the embodiment. Schematic diagram of chemical mechanical polishing. As shown in Fig. 7, the gas will be poured into the vent hole 58 and the flow opening 6'' and the gas molecules will expand the elastic film 70 to push the wafer. 062 No) 'At this time, a space is formed between the film support 50 and the film 70. Since the film support 50 of the embodiment is provided with a flow opening 6〇 in the peripheral region 54, the flow of the gas is miscellaneous. Will change, so that the gas molecules in the surrounding area will not concentrate on hitting the area A, but there is The collision of some gas molecules is transferred to the region B, whereby the pressure is limited to the pressure of the chemical mechanical research (4). The pressure received by the 岐_7〇 is relatively uniform, so that the crystal uniformity will also be In the present embodiment, the thickness of the film support seat % in the peripheral zone 54 is greater than the thickness of the central zone 52, and the position of the flow guide opening 6 is located in the peripheral zone 54 from the center of the circle (4 /3) The annular region of R to R is preferably, but not limited thereto. Further, the present embodiment is configured to have a circular opening and penetrate the film support seat 50 in a direction perpendicular to the first surface. 'However, parameters such as shape, size, setting position, arrangement density and penetration direction can be changed according to actual conditions. , People only refer to Figure 8 to Figure 14. Figures 8 through 14 show schematic views of other embodiments of the present invention. In order to facilitate the comparison of the various embodiments, the same components as those of the above-described embodiments are denoted by the same reference numerals and the description is only for the differences, and the same portions are not described. Or 3, 8 and 9 show that the shape of the flow guiding opening 60 may also be a slit-shaped opening, such as a hexagonal opening, and the shape of the flow guiding opening 60 is still visible. 匕 Any shape, not The above embodiments are limited. - the first tortoise; 7, dad t, ..., the direction of the flow opening 60 through the film support 50 is not limited to ~ 〇 62. = vertical direction of the first surface, but also A surface gambling direction, such as the direction of tilting outward or inward. , 帛11 diagram and 12th _ show that the guide flow such as 60 is not limited to a closed-shaped opening, and also TM 彡 触 « « 座 座 座 座 _ _ _ _ _ _ _ 论 , , , , , , , , , , , 的Each of the ridges, such as a triangle or a quadrangle, allows the _support base 50 and - such as a serrated circumference. • The embodiment of Figure 13 is similar to Figure 12 except that the flow opening 60 of Figure 13 is a long gap and the depth of each notch has reached the junction of the central zone peripheral zone 54. 〃 Figure 14 shows that the shape design of the diversion opening 6〇 is not limited to the use of the same pattern, but a different pattern design can be mixed. • Please refer to item 15 and figure 16. Fig. 15 is a schematic view showing a polishing head of a chemical mechanical polishing according to another embodiment of the present invention, wherein Fig. 15 is a top view and Fig. 16 is a schematic cross-sectional view. The difference from the previous embodiment is that the polishing head of the embodiment is not provided with a flow guiding opening, and a gap is formed between the side wall of the ring of the film supporting seat 5 and the annular covering portion 74 of the film. The ring side wall 5〇c and the annular covering portion 74 are not in contact with each other. In this way, the ring side wall 5〇c and the annular cladding portion % can form a flow guiding space 84, which can also exert a diversion function to change the collision mode of the gas molecules. (4) = Shushe wants #_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Schematic diagram of the mechanical application head. As shown in Fig. 17, the polishing head of this embodiment uses the design of the conductive opening 60 and the flow guiding space 84 at the same time. Kiss refers to the 18th ϋ. Figure 18 is a schematic diagram of another example of the study of the mechanical research institute. If the circle is as shown in Fig. 18, the polishing head comprises a film support holder such as a film 0 and a support 120 between the support (4) and the film 110. The crucible support 9G includes a contact (διιρ_) 92 having a first table ′ and a support side wall (, _) 94 surrounding the periphery of the disc 92. The profile of the support sidewall 94 is a type 1 which includes a first support. Attachment 94a is perpendicular to the second surface of the 鄕92, and the second support member is coupled to the slab and the second member W' and the first slab member _ extends inwardly and with the branch plate % is essentially parallel. The branch tray 92 further has at least i air holes 96 spots to > - the guide w opens π 98 through the support plate 92, and the material of the 98 mark 92 corresponds to the support side wall 94 flute _ * y, the fork portion 94 of the mth part position. In addition, the first branch of the side wall of the branch. Attachment 94b includes a plurality of screw holes and also includes holes 122 corresponding to the vent holes 96 and the flow guiding openings 98. The film 1K) comprises a shaped body portion (1), a surface 92a of the support material %, a ring-shaped cladding portion m covering a side wall of the side wall - a 9 and a fastening portion 116 being fastened to the support side wall舛上. The second support corresponding to the fine transfer on the part can also make the gas pressure distribution uniform and the uniformity of the mechanical polishing of the edge lifter during the chemical mechanical polishing. It is worthwhile to make the shape of the polishing head of the 18th figure. Another-like. The polishing head of FIG. 18 differs in that the support side of the 19th figure is provided with the third member member 94c coupled to the second support member 94b, and the fourth member 94d is coupled to the third support member. The 94e is substantially perpendicular to the second branch _4b, and the second branch member extends in the outer direction and is substantially perpendicular to the third support member 94c. Further, the position of the screw hole 100 is provided on the fourth support member of the support side wall 94, such as the second member #bb. The present invention also provides a method for making chemical mechanical polishing difficult. Please refer to Figures 5 and 6 again. As shown in Figures 5 and 6, there is provided a film support structure, wherein the support frame 50 is shaped, and has a center 〇 and a radius R, and the film continuation 5G includes a central region. 52 is located in the center of the circle and the center of the circle (the area of the can' and the area of the periphery 54 are located at the center of the circle (2 cans to the central area of the film of the film-shaped seat 50 _ _ less ventilating hole, ° ° and around At least the flow opening 6〇 is in the area 54. Then, the first surface 50a of the film support base is attached with a branch 80, and then the film 7〇 is combined with the film support, and the 13 steps can be combined. Polishing by chemical mechanical polishing and further integration with other necessary components. Fig. 20 shows a thickness distribution measured by the material layer on the wafer using the polishing technique of the present invention. Fig. 1 is a thickness of y knife cloth obtained by chemical mechanical polishing of 6G seconds using a different polishing head design on an 8 忖 wafer thickness of 11 Å. 'The five types of grinding heads include: Reference to the reference. The conventional grinding head; the first type of grinding head : 1 mm of flow guiding space; 2nd grinding head: has a diversion opening at the edge of the central zone, the diameter of the diversion opening is 3 mm; the first type of grinding head. has a diversion opening in the peripheral zone, diversion The diameter of the opening is 6 mm; the fourth type of grinding head has a flow space of 3 mm. Figure 20 shows a comparison of the reference head using a conventional grinding head, including the first grinding head and the third grinding head. The fourth type of grinding lining can effectively improve the peripheral uniformity of the wafer _ thickness uniformity of the oxide layer after undergoing chemical mechanical polishing, showing that the polishing head of the present invention can indeed improve the uniformity of the CMP, such as the band effect. In addition, the square butterfly test structure also shows that the second type of polishing head which is provided with the flow guiding opening in the central area instead of the surrounding area cannot improve the uniformity of chemical mechanical polishing. In summary, the chemical mechanical polishing of the present invention The design of the grinding head using the flow opening or the 062 flow space can effectively improve the uniformity of chemical mechanical polishing. It is worth noting that the polishing head of the present invention is set in a specific material layer or a specific structure. Mechanical grinding, and can be widely turned into a wire interlayer dielectric layer, a connection plug, a shallow trench isolation, a mosaic structure or other structures. The above is only a preferred embodiment of the present invention, The average variation and modification of the scope of the invention should be within the scope of the invention. [Simplified description of the drawings] Fig. 1 is a schematic view of a conventional chemical mechanical polishing machine. The grinding head is as shown in Fig. 3. Fig. 3 is the intention of the conventional chemical mechanical polishing head for chemical mechanical polishing. Fig. 4 shows the flattening of the wafer upper layer by the conventional chemical mechanical polishing head. The thickness distribution map is measured. Fig. 5 and Fig. 6 are schematic views showing the polishing head of the chemical mechanical polishing according to an embodiment of the present invention. Fig. 7 is a schematic view of the chemical mechanical modification of the embodiment. From Fig. 14 to Fig. 14, there is shown a schematic view of other embodiments of the polishing head of the present invention. Fig. 16 and Fig. 16 are schematic views showing a chemical mechanical polishing head according to another embodiment of the present invention. ^ : 7 is a schematic view of the polishing head of the chemical mechanical polishing of the invention. The figure is a schematic view of another embodiment of the mechanical grinding head of the school. Figure B shows another departure of the grinding head of Figure 18. 1322062 Figure 20 shows a thickness profile measured by a layer of material on a wafer after chemical mechanical polishing using the polishing head of the present invention.
【主要元件符號說明】 10 轉動平台 12 研磨墊 14 研磨漿料供應器 16 研磨漿料 18 晶圓 20 研磨頭 22 薄膜 24 薄膜支撐座 26 支撐墊 28 拘束環 30 通氣孔 32 孔洞 50 薄膜支撐座 50a 第一表面 50b 第二表面 50c 環側壁 52 中央區 54 周邊區 56 扣合槽 58 通氣孔 60 導流開口 62 螺絲孔 70 薄膜 72 碟片形主體部 74 環狀包覆部 76 扣合凸緣 80 支撐墊 82 孔洞 90 薄膜支撐座 90a 第一表面 90b 第二表面 92 支撐碟 94 支撐側壁 94a 第一支撐部件 94b 第二支撐部件 94c 第三支撐部件 94d 第四支撐部件 96 通氣孔 16 1322062 98 導流開口 100 110 薄膜 112 114 環狀包覆部 116 120 支撐墊 122 螺絲孔 碟片形主體部 扣合部 孔洞 ❿ 17[Main component symbol description] 10 Rotating table 12 Polishing pad 14 Polishing slurry supply 16 Polishing slurry 18 Wafer 20 Grinding head 22 Film 24 Film support seat 26 Support pad 28 Restraint ring 30 Vent 32 Hole 50 Film support 50a First surface 50b second surface 50c ring side wall 52 central region 54 peripheral region 56 snap groove 58 vent hole 60 flow opening 62 screw hole 70 film 72 disc-shaped body portion 74 annular cladding portion 76 snap flange 80 Support pad 82 hole 90 film support seat 90a first surface 90b second surface 92 support plate 94 support side wall 94a first support member 94b second support member 94c third support member 94d fourth support member 96 vent hole 16 1322062 98 diversion Opening 100 110 film 112 114 annular covering portion 116 120 support pad 122 screw hole disc-shaped body portion fastening portion hole ❿ 17