1306255 ITPT-05-013 19356twf.doc/t 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體記憶體，且特別是有關於 一種可加速記憶體執行重複性指令的控制裝置。 【先前技術】 對一般半導體記憶體而言，用來執行的指令(c〇mand) 及動作並不繁雜，大部份控制的流程都在於對不同記憶體 _ 位址下軸似的指令，也因此常會需要在某一時間内，對 不同的纪憶體位址做重覆性的動作，例如抹除(erase)所有 記憶體内各位址上之值，也就是依序對所有的記憶體區塊 下達抹除齡。-般而言可撰綠體程式(fmnware c〇de) 透過微控器(Micro-contr〇ller Unit ’ MCU)的輸出淳將指令 傳送到記憶體以達到要求，在動作的期間内MCU無法分 工做其它的事，影響了整體效能。 【發明内容】 種記憶體的控制裝置 減低微控制器的負荷 用 並 本發明的目的就是在提供一 以加速記憶體執行重覆性指令， 增加記憶體執行指令的效能。 本發明提出一種記憶體的控制裝 執行重複性指令。紗辦Η」 ㈣加速s己憶體 資訊表以刀t壯 包括微控器、控制器、區塊 :狀恶裝置(state machine)。其 = 出-指令以操作記憶體，而記 p用叫 输記憶體及微控器之間，當 塊。控制器 執行時，由微控器透過控制器執 二被重複 订忑扣7，而當判斷出該 1306255 ITPT-05-013 19356twf.doc/t 指令需被重複執行時，可由狀態裝置重複執行該指令。區 塊資讯表用以記錄每一個區塊的狀態。狀態裝置用以根據 區塊資訊表取得每一個區塊的狀態，解析區塊的狀態以便 重複執行該指令，並據以更新區塊資訊表内的狀態。 本發明藉由在需要對記憶體執行重複性指令時，將原 本負貝下達指令的微控器改成由狀態裝置下達指令，可以 在不需要微控器及軟體的介入下由狀態裝重指 令’增加記憶體的制效能及減低其功率損耗。 為讓本發明之上述和其他㈣、特徵和優點能更明顯 隆，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 11為依照本發明-實施例所纟會示之記憶體的控制裝 之塊圖，其中記憶體以非揮發性記憶體(η⑽·仰1沾k 的快閃記憶體為例，而記憶體包含多個區塊 勃!麥照®1，控制裝置100目以加速快閃記憶體 執灯重覆性騎，其包括微㈣ ^ ⑽、狀態裝置13〇、區塊資訊表14〇及細1 是讀^!1G^以f出—指令以操作記憶體，該指令可以 塊之指二N =人t令、抹除指令’或者尋找則固空的區 MCU日lL)之門、ϋ°㈣11 12G祕於快閃記憶體及 MCU11"、二，J判斷出該指令不需被重複執行時，由 ▽而被重讀行時，由狀態裝置別重複執行該指令。 1306255 ITPT-05-013 19356twf.doc/t • $夕卜在狀態裝置130重複執行該指令時，需搭配區 塊資訊表140及仔列器150，其中區塊資訊表ΗΟ用以記 錄快閃記憶體中每-個區塊的狀態，而㈣器15 列狀態裝置130重複執行該指令時所需的快閃記憶體的位 址。因此，狀態裝置130根據區塊資訊表14〇取得快閃記 憶體中每-個區塊的狀態，解析這些狀態並得以適當的動 作重複執行該指令，然後進一步更新區塊資訊表14〇内相 • 對應的狀作為狀悲裝置130下一次啟動的依據。 圖2為依,日、?、本發明一貫施例所繪示之區塊資訊表之資 料結構圖。請參照圖2，圖1所示的區塊資訊表14〇包括 多個子區塊資訊’分別對應到快閃記憶體每一個區塊。在 一實施例中，每一個子區塊資訊大小為16位元，其中第一 個攔位為記憶體區塊的狀態，有空的(empty)、已用的(used) 及可抹除的(erasable)三種狀態，以2位元表示之；第二個 攔位保留不使用’可以在擴充其它功能所需資訊時使用； 而第三個攔位為LP映射，即邏輯位址(l〇gical address)到實 . 體位址(physical address)的映射闕係，以12位元表示之。 最初，區塊資訊表140中每一個子區塊資訊内的資料 是依據快閃記憶體中相對應的區塊内之冗餘區域 (redundant area)的内容而建立，並將之儲放在隨機存取記 憶體(Random Access Memory，RAM)所劃分出來的一塊區 域。當狀態裝置130啟動時，狀態裝置130根據區塊資訊 表140提供區塊的狀態之分析結果做出相對應的動作以重 複執行該指令，並由軟體更新區塊資訊表140的内容，硬1306255 ITPT-05-013 19356twf.doc/t IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor memory, and more particularly to a control device capable of accelerating memory execution of repetitive instructions . [Prior Art] For general semiconductor memory, the instructions (c〇mand) and actions used for execution are not complicated. Most of the control processes are based on instructions that are similar to different memory_addresses. Therefore, it is often necessary to perform repeated actions on different memory addresses at a certain time, such as erasing the values of all the addresses in the memory, that is, sequentially all the memory blocks. Release the age. - Generally speaking, the green program (fmnware c〇de) transmits the command to the memory through the output of the Micro-contr〇ller Unit 'MCU to meet the requirements. The MCU cannot be divided during the operation period. Doing other things affects overall performance. SUMMARY OF THE INVENTION A control device for a memory reduces the load on a microcontroller. The object of the present invention is to provide an accelerated memory to execute a repetitive instruction and increase the performance of a memory execution instruction. The invention proposes a memory control device to execute a repetitive instruction. (4) Accelerate the sufficiency of the body. The information table is sturdy with a knife. It includes a micro controller, a controller, and a block: a state machine. Its = output - command to operate the memory, while p is used between the input memory and the microcontroller, as a block. When the controller is executed, the micro controller is repeatedly ordered by the controller, and when it is determined that the 1306255 ITPT-05-013 19356twf.doc/t instruction needs to be repeatedly executed, the state device may repeatedly execute the instruction. The block information table is used to record the status of each block. The state device is configured to obtain the state of each block according to the block information table, parse the state of the block to repeatedly execute the instruction, and update the state in the block information table accordingly. The invention can change the micro controller of the original negative order instruction into the instruction by the state device when the repetitive instruction is required to be executed on the memory, and can be loaded by the state without the intervention of the micro controller and the software. 'Increase the performance of the memory and reduce its power loss. The above and other aspects, features and advantages of the present invention will become more apparent from the following description. [Embodiment] 11 is a block diagram of a memory control device according to the present invention, wherein the memory is exemplified by a non-volatile memory (n(10)· 11 kk flash memory). The memory includes a plurality of blocks, Maizhao®1, and the control device 100 aims to accelerate the flashing of the flash memory, including micro (4) ^ (10), state device 13〇, block information table 14〇 And fine 1 is to read ^! 1G ^ to f - command to operate the memory, the instruction can be the block of the two N = human t command, erase the command 'or find the solid area of the MCU day lL), ϋ°(4)11 12G is secretive to flash memory and MCU11", second, J judges that the instruction does not need to be repeatedly executed, and when the line is reread due to ▽, the state device does not repeat the instruction. 1306255 ITPT-05-013 19356twf.doc/t • When the state device 130 repeatedly executes the command, it needs to be combined with the block information table 140 and the piglet 150, wherein the block information table is used to record the flash memory. The state of each block in the body, and the (four) 15 column state device 130 repeats the address of the flash memory required to execute the instruction. Therefore, the state device 130 obtains the state of each block in the flash memory according to the block information table 14 , parses the states and repeats the execution of the command by appropriate actions, and then further updates the block information table 14 • The corresponding shape is used as the basis for the next start of the device 130. Fig. 2 is a structural diagram of the information of the block information table according to the consistent embodiment of the present invention. Referring to FIG. 2, the block information table 14 shown in FIG. 1 includes a plurality of sub-block information's corresponding to each block of the flash memory. In one embodiment, each sub-block information size is 16 bits, wherein the first block is the state of the memory block, empty, used, and erasable. (erasable) three states, expressed in 2 bits; the second block reserved without 'can be used when expanding the information required for other functions; and the third block is LP mapping, ie logical address (l〇 The mapping of the gical address to the physical address is expressed in 12 bits. Initially, the data in each sub-block information in the block information table 140 is established according to the content of the redundant area in the corresponding block in the flash memory, and is stored in a random An area partitioned by a random access memory (RAM). When the state device 130 is activated, the state device 130 performs a corresponding action according to the analysis result of the state of the block provided by the block information table 140 to repeatedly execute the instruction, and the content of the block information table 140 is updated by the software.
1306255 ITPT-05-013 19356twf.doc/t 體將根據block status(table内儲放的狀態值）。如此一來， 在需要重複執行該指令時，利用狀態裝置13〇取代Mcu 110重複執行該指令，大幅降低MCU 11〇的負荷，使得整 個快閃記憶體的使用有更好的效能。而在不黨要 二二 ，指令時’使狀態裝置13 0處於閒置(idle)狀態以減少功^ 損耗。 圖為依照本發明-實施例所緣示之狀態裝置的狀能 圖，其適驗執行尋找N個空的區塊的指令，N為正^ 睛參照圖3，圖1所示的狀態裝置13〇包括閒置狀能a、 尋找狀態B、判斷狀態C、抹除狀態D、驗證狀能= ί狀態：。其中，閒置狀態A為狀態裝置13。的初：狀t 哥找狀i B用錄據區塊資訊表⑽記錄的㈣^。 塊的狀態，自快閃記憶體中尋找則固1‘ : 用用以驗證區塊的抹除是否成: 、、口束狀惑F用叫止重複執行該指令。 ，態裝置m收到開始信號時 該指令，因此狀態裝置ί30 义:員重稷執仃 一旦尋找狀態Β自快閃記情 〔進入哥找狀態Β。 則進入結束狀態F以停止^^=^_區塊時’ 尋找❹個空的區境時，==反之，當尚未 判斷狀態C根據子區播次 心 塊是空的或是可抹除的。，狀態欄位判斷目前區 址記錄到符列器150，戈:^疋空的’則將該區塊的位 亚回到哥找狀態B繼續尋找下一個 1306255 ITPT-05-013 19356twf.doc/t .f的區塊。紐塊是可抹_’咖抹除狀態D進行抹除， 错此不需透過軟體而直接由硬體發出抹除指令。另外，判 斷狀態C直到件列器150不夠空間件列位址，或重覆次數 超過指定的數目M (即找了 Μ個區塊仍然找不到N個空的 區塊)時，會再_結束狀態F以停止錢執行該指令，其 中Μ為大於n的正整數。 . #抹除狀態D抹除區塊_容後，_驗證狀態£驗 _ 難塊的抹除是否成功’若成剌回到尋餘態Β再尋找 下一個空的區塊’若失敗則到結束狀態F以停止重複執行 該指令。最後，結束狀態F停止重複執行該指令，並將狀 態回報給系統，故在此例狀態裝置13〇可以找出在快閃記 憶體内還可以使用的空的區塊，如果達到需要的數目後會 自動停下，以避免浪費系統效能及減少功率損耗，不需軟 體介入可減輕MCU 110的負荷。 *圖4繪不為依照本發明另一實施例的一種狀態裝置的 狀，圖’可以適用於重複性執行動作，如抹除、寫入、讀 出等等。請參照® 4 ’狀態裝置由閒置狀態Α等待勒體^ 達開始命令，開始後進人尋餘態B。在滿足找尋條件後， 則進入結束狀態F並且回報給系統。相對地，若是尚未滿 足找尋條件，則進入判斷狀態c。在本實施例中，找尋條 件意指結束此狀態裝置的條件。例如，若是狀態裝置用來 抹除10個記憶體區塊，則尋找條件則為1〇個記憶體區塊。 、在尋找狀態B時，若是記憶體狀態符合判斷條件，則 進入執打動作狀態D。反之，若是記憶體狀態不符合判斷 1306255 ITpT-〇5-〇i3 19356twf.d〇c/t = Β。α抹除為例’錢記 二除的’則進行抹除動作。而若是標記不為可： 除的，則再跳回找尋狀態Β。 +為可抹 作狀態D結束後，可以進人驗證狀能Ε & 動作成功執行’則跳回尋找狀態B，以繼續；下。而 憶體位址騎均_作。姆地，若是動作^了了己 回結束狀態F，並且Θ郝& '則跳 λ , +卫卫回報糸統。以下本發明揭露讀出、皆 入以及抹除k的狀態裝置實例。 ' 寫 讀出本發，一較佳實施例的-種在執行 —、置的狀態圖。請合併參照圖1和圖5， 如右人執仃動作為對記憶 / 憶體位址之狀態標= 1將對應到欲讀出之記 億體區間全部言賣^ 狀f Β。當尚未將指定的記 C瞎，檢杳兮々味 θ進入判斷狀態C。而在判斷狀態 Μ體(ΙΓ^Ϊ 址及狀態標記。相對地，當指定之 出時，則直接跳至結束狀態F。 態標記為不需讀欲;:出之記憶體區間内’或是狀 查下一記憶體位址=能=找狀;f，以重新檢 址在指定區間内，並=之較5亥5己憶體位 讀出動作狀態D。此出的狀態時，麻至執行 體發出讀出的指令，】且，：器120會被控制對快閃記憶 跳至驗證狀HE。並且在控制器⑽執行動作結束後， 1306255 ITPT-05-013 19356twf.doc/t 若是讀出記憶體的動作成功執行，則跳到尋找狀態 B ’以對下一記憶體位址繼續重複以上步驟。相對地，若 疋頃出記憶體的動作失敗了，則回到結束狀態F，並且將 狀態回報給系統。因此’在本實施例中，狀態裝置130可 =找出快閃記憶體内指定區間之記憶體的内容，並且在指 定區間搜尋完畢後系統會自動停下，以分擔微控制器 的負荷。 ^圖6繪示為依照本發明之一較佳實施例的一種在執行 寫入動作之狀態裝置的狀態圖。請合併參照圖1和圖6， ^欲執订動作騎記憶體巾在某記憶體區舰寫人的動作 時，首先透過韋刃體指定欲寫入之記憶體位址區間。當 13Gt被啟鱗，會由閒置狀態A進人尋找狀態B。春 肤^指定的實體記憶體區間全部寫人時，會進入到判^ 悲，以檢查該記憶體位址及狀態標記。 疋之，憶_„被寫人，齡接黯結綠態F。4 句斷狀態C時，如果記憶體位址不在耷 體區間内’或是狀態標記為不可寫入的狀之心隐 狀態B，以fA 日7狀態，則跳回尋找 二—_紐在衫區間内並且 ^^ f之’ 對快閃二此時’系統會透過控制器12。 作結束後Γϋί 且在控制器m值型動 个伐，跳至驗證狀態E。 阻主勒 B，人記憶體的動作成功執行，_至尋找狀能 下—兄憶體位址繼續重複以上的步驟。反之，^' 11 1306255 ITPT-05-013 19356twf.doc/t 寫入記憶體的動作失敗了，則回到結束狀態F，並且將狀 態回報給系統。因此，在本實施例中，狀態裝置13〇可已 依據狀態標記，而在指定之記憶體區間内重複進行寫入的 動作。1306255 ITPT-05-013 19356twf.doc/t will be based on the block status (status value stored in the table). In this way, when the instruction needs to be repeatedly executed, the state device 13 is used instead of the Mcu 110 to repeatedly execute the instruction, which greatly reduces the load of the MCU 11〇, so that the use of the entire flash memory has better performance. In the absence of the party, when the command is made, the state device 130 is placed in an idle state to reduce the power loss. BRIEF DESCRIPTION OF THE DRAWINGS The figure shows a state diagram of a state device according to the present invention, which is adapted to perform an instruction to find N empty blocks, N being a positive eye, and FIG. 3, the state device 13 shown in FIG. 〇 Include idle status a, find status B, determine status C, erase status D, verify status = ί status:. The idle state A is the state device 13. The first: the shape of the t brother looking for the i B recorded with the block information table (10) (four) ^. The state of the block, if it is searched from the flash memory, it is solid 1': It is used to verify whether the erase of the block is: or, the mouth is confused with F and the instruction is repeatedly executed. The state device m receives the start signal when the instruction, so the state device ί30 meaning: the person is heavy and stubborn. Once the state is sought, the flash is remembered. Then enter the end state F to stop the ^^=^_ block when 'finding an empty area, == or vice versa, when it has not been judged that the state C is empty or erasable according to the sub-region broadcast sub-block . The status field determines that the current location record is recorded to the characterizer 150, and the "go: empty" is then returned to the state of the block B to continue looking for the next 1306255 ITPT-05-013 19356twf.doc/ The block of t.f. The block can be erased _' coffee erasing state D for erasing, the wrong way does not need to send the erase command directly by the hardware through the software. In addition, it is judged that the state C is not enough for the spacer column address, or the number of repetitions exceeds the specified number M (that is, if only N empty blocks are found in the block), The end state F executes the instruction with a stop money, where Μ is a positive integer greater than n. #抹除 State D erase block _ after the _ verification state 验 _ difficult block erase is successful 'If you return to the search state, then find the next empty block' If it fails End state F to stop repeating the instruction. Finally, the end state F stops repeating the instruction and returns the status to the system, so in this example the state device 13 can find an empty block that can be used in the flash memory, if the required number is reached. It will automatically stop to avoid wasting system performance and reducing power loss. It can reduce the load of MCU 110 without software intervention. * Figure 4 depicts a state device in accordance with another embodiment of the present invention, which may be adapted for repetitive execution operations such as erasing, writing, reading, and the like. Please refer to the ® 4 ′ state device from the idle state Α waiting for the body to reach the start command, and then enter the search for the residual state B. After the search condition is met, the end state F is entered and returned to the system. In contrast, if the search condition is not satisfied, the judgment state c is entered. In the present embodiment, the search condition means the condition for ending the state device. For example, if the state device is used to erase 10 memory blocks, then the search condition is 1 memory block. When looking for the state B, if the memory state meets the judgment condition, the operation state D is entered. On the other hand, if the memory state does not meet the judgment 1306255 ITpT-〇5-〇i3 19356twf.d〇c/t = Β. The alpha erase is an example of the 'money record two division' and the erase operation is performed. If the mark is not available: If it is, then jump back to the search state. + After the readable state D is over, you can enter the verification state and the action will be executed successfully. Then jump back to find the state B to continue; And the memory address is _. Mdi, if the action ^ has returned to the end state F, and Θ Hao & 'jump λ, + Guardian returns 糸. The following is an example of a state device for reading, arranging, and erasing k. 'Writing and reading the present invention, a state diagram of a preferred embodiment. Please refer to FIG. 1 and FIG. 5 together. If the right person performs the action as the status of the memory/memory address, the flag = 1 will correspond to the message to be read. When the specified record C has not been reached, the test θ is entered into the judgment state C. In the judgment state body (ΙΓ^Ϊ address and status flag. Relatively, when specified, it jumps directly to the end state F. The state is marked as no need to read; in the memory interval] Look at the next memory address = can = find the shape; f, to re-address in the specified interval, and = more than 5 Hai 5 recalled body position read action state D. This state, Ma to the executive body The read command is issued, and the device 120 is controlled to jump to the flash memory by the flash memory, and after the controller (10) performs the action, 1306255 ITPT-05-013 19356twf.doc/t if it is a read memory If the action of the body is successfully executed, jump to the search state B' to continue repeating the above steps for the next memory address. In contrast, if the action of the memory is failed, return to the end state F, and return the state. To the system. Therefore, in the present embodiment, the state device 130 can = find the content of the memory in the specified interval in the flash memory, and the system will automatically stop after searching in the specified interval to share the microcontroller's Load. ^ Figure 6 is shown in accordance with one of the present invention A state diagram of a device in a state in which a write operation is performed in a preferred embodiment. Please refer to FIG. 1 and FIG. 6 together, in order to perform an action riding on a memory towel in a memory area, when the player writes a motion, first The blade specifies the address of the memory address to be written. When 13Gt is triggered, the idle state A will enter the state to find the state B. When the physical memory interval specified by the spring skin ^ is written, it will enter the judgment. In order to check the memory address and status mark. 疋之, recall _„ is written, the age is connected to the green state F. 4 when the sentence is C, if the memory address is not in the body area' or the status is marked as The state of the unwritable heart is hidden, and in the state of fA, the state of 7 is jumped back to find the second--news in the shirt zone and ^^f's 'flashing two' at this time the system will pass through the controller 12. After the end Γϋί and in the controller m value type, jump to the verification state E. Block the main B, the human memory action is successfully executed, _ to find the shape of the next - the brother recall the body address continues to repeat the above steps. Conversely, ^' 11 1306255 ITPT-05-013 19356twf.doc/t write memory Fails, back to the end state F., And the state returns to the system. Accordingly, in the present embodiment, the state machine may have 13〇 depending on the state flag, the write operation is repeated within the specified range of memory.
圖7繪示為依照本發明之一較佳實施例的一種在執行 抹除動作之狀態裝置的狀態圖。請合併參照圖丨和圖7 , 如欲執行重複性抹除動作時，可透過韌體將區塊資訊表 140中，對應到欲抹除之記憶體時體位址之狀態標記設定 ，可抹除的(Erasable)。在狀態裝置】3〇被啟動後，會進入 尋找狀態B。當指定的記憶體區塊尚未全部抹除時7狀態 裝置會進人判斷狀態C。相對地，當指定的記憶體區間已 全部抹除完畢，則直接跳至結束狀態F。Figure 7 is a diagram showing the state of the apparatus in the state in which the erase operation is performed, in accordance with a preferred embodiment of the present invention. Please refer to the figure 丨 and FIG. 7. If the repetitive erasing action is to be performed, the status flag of the block body information table 140 corresponding to the memory body address to be erased can be set by the firmware, and can be erased. (Erasable). After the status device is activated, it will enter the search state B. When the specified memory block has not been completely erased, the 7-state device will enter the state judgment state C. In contrast, when the specified memory interval has been completely erased, it jumps directly to the end state F.
若是該位址狀態標記為不可抹除的或記憶體位址不在 指定區間内時，則再跳回尋找狀態β，以重新檢查下一記 憶體位址及其㈣標記。狀，若該他在指賴間内， 並且狀標記為可抹除的，則進人執行抹除狀態D。此時， 控制器_120會對記憶體裝置發出抹除指令，並且在控制器 120執行動作結束後，跳至驗證狀態e。 石疋職聊成X力，則跳回狀態B，α對下一記憶體 以上的步驟。反之，如果抹除動作失敗，則跳回 、、、。束狀恶F，並且回報給系統。 士 、月藉由在$要對記憶體執行重複性指令時，將原 、責下達指令的微控該成由狀態裝置下達指令，可以 12 1306255 ITFT-05-〇 13 ] 935 6twf.doc/t 在不需要微控器及軟體的介入下由狀態裝置完成 •7，增加記憶體的使用效能及減低其功率損耗。 曰 雖然本發明已以較佳實施例揭露如上，麩Α ，本發明:任何熟習此技藝者，在不脫離:發 和乾圍内’當可作些許之更動與潤飾，因此 ^ 範圍當視後附之申請專利範圍所界定者為準 之保護 【圖式簡單說明】 裝置為依照本發明一實施例的一種記憶體的控制 資料為依照本發明—實施_ —魏塊資訊表之 圖^示為依照本發明—實施例t種 悉圖^適用於執行尋找多個空的區塊的指令。收 狀態=、會不為依照本發明另—實施例的—種狀態襄置的 讀出:作明之一較佳實施例的-種在執行 狀恶裝置的狀態圖。 芎入二竹3不為依照本發明之一較佳實施例的一種在執行 馬入狀態I置的狀態圖。 執订 抹除二乍照本發明之-較佳實施例的-種在執行 r ± φ _狀怨扁置的狀態圖。 要元件符號說明】 °己fe體的控制褒置 110 :微控器 13 1306255 ITPT-05-013 19356twf.doc/t 120 :控制器 130 :狀態裝置 140 :區塊資訊表 150 :佇列器 A : 閒置狀態 B : 尋找狀態 C : 判斷狀態 D : 抹除狀態 E : 驗證狀態 F ： 結束狀態If the address status flag is not erasable or the memory address is not within the specified interval, then jump back to the search state β to recheck the next memory address and its (4) flag. If the person is within the fingertip and the mark is erasable, then the erase state D is performed. At this time, the controller_120 issues an erase command to the memory device, and jumps to the verification state e after the controller 120 performs the action. Shih-hsien chats into X-force, then jumps back to state B, α to the next step above the memory. Conversely, if the erase action fails, it jumps back to , , , . Bunch of evil F, and return to the system. When the recursive instruction is executed on the memory, the micro-control of the original and the responsibility command is issued by the state device, which can be 12 1306255 ITFT-05-〇13] 935 6twf.doc/t It is completed by the state device without the intervention of the microcontroller and software. 7. Increase the memory usage and reduce its power loss. Although the present invention has been disclosed in the preferred embodiment as above, the present invention: any person skilled in the art, without departing from the hair and the dry circumference, can make some changes and retouching, so the scope of the treatment is The protection defined by the scope of the patent application is as follows: The device is a control data of a memory according to an embodiment of the present invention, which is shown in the figure of the present invention. In accordance with the present invention - an embodiment of the invention is adapted to execute instructions for finding a plurality of empty blocks. Receiving state =, will not be read in accordance with another embodiment of the present invention: a state diagram of a preferred embodiment of the present invention. The intrusion into the two bamboos 3 is not a state diagram in which the state of the horse is set in accordance with a preferred embodiment of the present invention. The invention is performed by erasing a state diagram of the preferred embodiment of the present invention in the execution of r ± φ _ 怨 扁 。. The description of the component symbol is as follows: Control device 110: Micro controller 13 1306255 ITPT-05-013 19356twf.doc/t 120: Controller 130: State device 140: Block information table 150: Arrayer A : Idle state B: Find state C: Determine state D: Erase state E: Verify state F: End state