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TWI304006B - Tin/indium lead-free solders for low stress chip attachment - Google Patents

Tin/indium lead-free solders for low stress chip attachment Download PDF

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Publication number
TWI304006B
TWI304006B TW094127897A TW94127897A TWI304006B TW I304006 B TWI304006 B TW I304006B TW 094127897 A TW094127897 A TW 094127897A TW 94127897 A TW94127897 A TW 94127897A TW I304006 B TWI304006 B TW I304006B
Authority
TW
Taiwan
Prior art keywords
flux
weight
die
substrate
indium
Prior art date
Application number
TW094127897A
Other languages
English (en)
Other versions
TW200621411A (en
Inventor
Fay Hua
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW200621411A publication Critical patent/TW200621411A/zh
Application granted granted Critical
Publication of TWI304006B publication Critical patent/TWI304006B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
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Description

• 1304006 (1) 九、發明說明 【發明所屬之技術領域】 本發明一般係關於焊接方法，較明確地並不排除相關 於無鉛焊劑。 【先前技術】 焊劑是特別組成的金屬（即所知的合金），會在相當 φ 低的溫度（攝氏120至450度）下呈現流動、熔化的狀態 。最常使用的焊劑包含錫和鉛爲基本組份，也有許多合金 的變化型式，包括兩種或以上的下列金屬元素：錫（Sn) 、鉛（Pb )、銀（Ag )、鉍（Bi )、銻（Sb )、和銅（ Cu )。焊劑是以被加熱時熔化、然後接合（沾濕）至金屬 表面的方式展現功效。該焊劑在接合的金屬之間形成一永 久的金屬間連結，特別是像一金屬“膠”的功能。除了提 供一結合的功能之外，焊劑接合在焊接的元件之間也提供 φ 一電力連接以及一熱傳導的路徑。焊劑適用的形式有許多 種，包括糊狀物、導線、粗條狀、細帶狀、預先成型、以 XL liia 及塊狀。 許多高密度的積體電路（ICs )，比如微處理器、圖 形處理器、微控制器、以及類似物是以使用一大數目的輸 入/輸出（I/O)線路之方式封裝。用於此目的之一般封 裝技術包括“覆晶”封裝和球形格線陣列（BGA )封裝， 這兩種封裝技術使用焊劑連接（接合）於各個I/O線路， (即針狀或球狀）。於連接從未如此增加的密度之複雜 -4- (2) • 1304006 ICs，覆晶和BGA中I/O連接的密度已經產生對應的增加 量，因此用於該封裝中的焊劑接合點也必須減小尺寸。 較明確地，覆晶（FC)不是特定的封裝件（如SOIC )或甚至不是一封裝型式（如BG A )，覆晶敘述的是將 晶粒電力連接至該封裝載體的方法。該封裝載體，不論是 基板或引線框，提供從該晶粒至該封裝件外部之間的連接 。於“標準”的封裝過程中，該晶粒與該載體之間的互相 φ 連接是由導線形成。該晶粒是面向上的接附至該載體，然 後一導線先與該晶粒結合，再形成迴路並結合至該載體。 導線通常是1至5毫米長，直徑23至35微米。相較之下 ，該晶粒與覆晶封裝內載體之間的互相連接，是以一導電 性的“塊狀物”直接放置在該晶粒表面上形成，然後將該 具有塊狀的晶粒“翻覆過來”面朝下放置，並以該塊狀物 直接連結至該載體。 該覆晶連接一般是以下列兩種之一的方法形成：使用 #焊劑或使用導電性黏著劑。目前最普通的封裝互相連接是 焊接，在晶粒一側的高97Pb-3Sn以低溫熔化的Pb-Sn接 附至基板0該具有焊劑塊的晶粒是以一焊劑軟融步驟接附 至一基板，與用於將BGA球接附至該封裝件外部的製程 非常相似。該晶粒焊接之後，將下塡料加進該晶粒與該基 板之間。下塡料是一種特別的工程用環氧基黏著劑，可以 塡滿該晶粒與該載體之間的區域、圍繞著該焊劑塊。此設 計是爲控制由於該矽晶粒與該載體之間熱膨脹差異所導致 該焊接處的應力，如以下進一步詳細敘述。一旦固化，該
-5- (3) •1304006 下塡料會吸收大部分的應力，降低該焊劑塊 大幅地增加此成品封裝件的使用期限。該晶 步驟是覆晶互相連接的基本步驟。除此之外 其餘的封裝結構可以有許多型式，通常也利 方式以及封裝型式。 最近歐盟已經強制要求2008年6月30 新產品不能含有鉛成分的焊劑，其他國家與 φ 似的限制。這對於1C產品的製造以及在產 使用焊接製程的工業帶來問題。雖然許多無 所熟知，但這些焊劑的性質與以鉛爲主的焊 其缺點，包括延展性（可塑性）的降低 BGA組合過程中特別容易發生問題。 【發明內容】 由於R&D的積極努力，完全轉變至無 • 重要進展近來已經逐漸形成。目前最常使用 接近三種在低溫熔化的Sn-Ag-Cu合金於各 。此接近低溫熔化的三重Sn-Ag-Cii合金產 相位冷-Sn, Ag3Sn和Cu6Sn5。於固化的過程 轉變的平衡狀態是動能抑制。當該Ag3Sn相 卻下形成核，該yS -Sn相位通常需要攝氏15 卻形成核。由於所要求的冷卻過程是如此不 的Ag3 Sri結構能夠在液態相位下快速長成， 時是在焊劑接合處最後固化之前。當大片的 上的張力，而 片接附和下塡 ，該晶粒周圍 用現存的製造 曰以後銷售的 地區也考慮類 品製造過程中 鉛的焊劑爲人 劑比較即顯露 ，這在覆晶和 鉛焊接技術的 的替代焊劑是 類的焊接應用 生三種固化的 中，低溫熔化 位以最小的冷 至30度的冷 一致，大片似 於冷卻過程同 A g 3 S η出現在 -6 - (4) *1304006 該焊劑接合處內，就會反向地影響該機械式行爲，並且藉 由沿著一大片Ag3Sn與該-Sn相位之間的交界面提供一 較佳的龜裂發展路徑，而降低該焊劑接合的疲勞壽命。對 於Sn-Ag-Cu焊劑常見的其他問題，包括ILD (內層電介 質）龜裂和覆晶組合物基板上的墊剝落、不良的可靠性、 以及BGA封裝件在BGA側的墊剝落。 • 【實施方式】 在此將敘述無鉛焊劑的詳細成份及其用於焊接的範例 。下列的敘述中，將陳述許多特定的細節，比如執行無鉛 焊接於覆晶封裝，以對於本發明之實施例提供一全面的瞭 解。然而，相關技術領域的技術人員應該瞭解，本發明並 不需要一種或以上的特定細節，或者以其他方法、元件、 材料等才能實施。其他的實例中，沒有呈現或詳細敘述眾 所熟知的結構、材料、或操作方式，是爲避免阻礙本發明 _之形態。 參考本說明全文中“一項實施例”或“ 一個實施例” ，其意思是指於相關實施例中敘述的一特定性質、結構、 或特徵，是包括在本發明之至少一實施例內。因此，於本 說明文中各個不同地方出現的詞句“於一個實施例中”或 “於一實施例中”，並不一定全都指的是相同的實施例。 更甚者，該特定的性質、結構或特徵，可以在一個或以上 的實施例中以任何適當的方式組合。 參考圖1 a和1 b，一典型的組合物包括一基板1 〇 〇， (5) 1304006 其具有複數個墊1 02位於對應的焊劑塊1 04形成處。基板 1 00進一步包括複數個焊劑球1 06耦合至其底面，相對的 引線108是連接在各個墊102與焊劑球106之間。一積體 電路晶粒1 1 〇是“覆晶”，利用焊劑塊1 04固定至基板 1 00。爲了有助於電子電路連接至該晶粒電路，晶粒Π 0 包括複數個墊112固定至其底面，各個都是經由穿過一內 層電介質（ILD) 114的電力線路（圖中未示），連接至 φ 該晶粒電路的對應部分。該ILD通常包含一電介質層，其 形成於該晶粒基板上方，就像是二氧化矽於一矽晶粒基板 。爲了增加該晶粒的操作速度，低k値材料可以當做該 ILD。然而，許多低k値材料是機械性脆弱。 於圖8顯示的另一覆晶組合物，該覆晶組合物可以包 括一晶粒1 1 〇，其具有複數個導電接點1 80。該導電接點 180可以經由一控制的崩潰晶片連接製程、電鑛製程、或 其他製程形成於該晶粒1 1 0上，也可以是任何適合的導電 φ 材料。於一實施例中，該導電接點180可以是銅。該導電 接點180可以導電耦合至焊劑塊104，以提供該晶粒110 與該基板1〇〇之間的電力連接。該基板100可以包括在其 底部表面的連接（圖中未示），類比至圖la中的焊劑球 1 06。該連接也可以是針狀或整列狀、或其他結構以連接 至一電路板。 該覆晶元件是將該焊劑塊的溫度升高一直達到該焊劑 的軟融溫度，使得該焊劑塊熔化以組合。此通常是在一軟 融烤箱或類似裝置內進行。接著，將該組合的元件冷卻， -8- (6) 1304006 致使該焊劑回復到其固體狀態，因此形成一金屬結合。 於一方法中，圖8的覆晶組合物可以藉由圖9A和9B 顯示的方式組合。圖9A呈現的一晶粒1 1〇具有導電接點 1 80分佈於其作用表面上，也可以電力連接至晶粒電路（ 圖中未示）。在一實施例中，該導電接點180可以是銅。 基板1〇〇包括焊劑塊104，其可以連接至一底表面上的引 線和接點（圖中未示），可以類比至圖1 a中所顯示。該 φ 焊劑塊1 〇4可以加熱至該焊劑的軟融溫度以上，並且能夠 接觸到該元件，使得該導電接點1 8 0與所對應的焊劑塊 1 〇4接觸，如圖9B所示。然後等到該焊劑冷卻，就形成 金屬結合。 典型地，該基板是以一固體材料形成，比如一固體薄 片。同時，該晶粒和內層電介質通常是從一半導體基板形 成，例如：矽基板。矽具有典型的熱膨脹係數（CTE )， 爲每攝氏1度每一百萬有2-4個粒子（ppm)。對於一典 • 型之覆晶基板的CTE大約是l6-19Ppm/°C，而CTE的差 異會導致該焊劑塊內引發應力，且內層電介質也跟著產生 〇 於軟融溫度下，根據圖1 a所顯示該基板和該晶粒分 別具有相對長度SL1和DL1。當該組合物冷卻下來，該相 對長度就減小，如圖lb所示的長度SL2和DL2。該分別的 長度減小量是以△ SL和△ DL表示，其中△ DL顯示爲大致 是〇以此說明清楚。因爲該晶粒的CTE是比該基板的 c τ E小許多，△ S L就會比△ D L大很多。 -9- (7) *1304006 由於CTE不吻合的結果，焊劑塊104會因此而變長 ，如圖lb中的焊劑塊104A所顯示。例如：考慮該組合 元件冷卻至僅低於該軟融溫度時焊劑塊的結構。此時該元 件的長度大致與圖1 a中該軟融結構相同。該焊劑是在固 體狀態，雖然因爲升高的溫度具有不錯的延展性，各個焊 劑塊的固化焊劑依附至分別的配對墊1 02和1 1 2。當該元 件繼續冷卻，該基板1 〇〇的長度會比晶粒1 1 〇長度大量地 • 減少，結果導致該焊劑塊變長（承受張力），包括在該焊 劑材料中引發一應力。此外，該應力的一部分也會經由墊 1 12 傳達至 ILD 1 14。 而且，操作過程中晶粒1 1 〇會產生熱量，相對於其電 路中電阻損失。因此，該晶粒的溫度以及附近熱耦合的元 件，包括基板1 00的溫度都可能會升高。當該晶粒電路在 一高工作量的狀況下操作時，其溫度會比較高；而較低的 工作量操作就會得到一較低的溫度，當然沒有操作時仍會 • 在一低溫。結果，該晶粒電路的操作引發熱循環，以及由 於該CTE不吻合在焊劑塊上對應的應力循環。 組合和操作過程中造成的應力會導致喪失功能的狀況 ’比如墊剝落、ILD龜裂、以及ILD/導電線路薄片解體 〇 一般用於降低該熱循環應力相關的喪失功能之一技術 ’是以一環氧基黏著劑的下塡料1 1 6塡入焊劑塊1 04附近 的空間，如圖1 c所示。該封裝製程通常是在該各類組合 元件的頂部模製一蓋罩1 1 8而完成。以此方式使用一下塡 -10- (8) Ϊ304006 料時，該操作應力承載是介於該焊劑塊/墊交界面與該下 塡料的組合之截面上，而不只是在該焊劑塊/墊交界面。 如此某些程度地降低在塊狀焊劑與焊劑塊/墊交界面上的 應力，但並沒有完全移除該應力。此外，於該晶片接附製 程中並沒有下塡料，而且晶片接附時該CTE引發的應力 主要是被該焊劑塊1 04吸收。如果該焊劑塊1 〇4變硬，該 ILD就會在該晶片接附的過程中龜裂。 圖lc顯示的一種應用該下塡料116之方法，可以使 用一種毛細管下塡料。一毛細管下塡料可以施加於該晶粒 1 1 〇與該基板1 〇〇之間的邊緣間隙附近，然後該毛細管下 塡料就會流進整個空隙以提供一下塡料1 1 6，如圖1 c所 示。該毛細管下塡料方法也可以用於提供一下塡料（圖中 未示）至圖8顯示的覆晶組合。該毛細管下塡料有助於在 可靠性測試中保護該ILD，但不是在組合過程中，因爲該 下塡料是在組合之後才施加。 另一方法中’可以使用一種非流動性的下塡料，如圖 10A和10B顯示。圖10A中，可以將該非流動性的下塡 料1 9 0施加至該基板1 〇 〇上，並且將該焊劑塊]〇 4浸入其 中。該晶粒1 1 0包括的導電接點1 1 4以及該基板1 〇 〇包括 的焊劑塊1 04和非流動性下塡料1 90，可以加熱至該非流 動性下塡料的熔點和該焊劑的軟融溫度以上之一製程溫度 ，然後把該元件互相接觸，如圖1 0B所示，並且冷卻使得 導電接點1 80與焊劑塊1 04之間形成電力接點，同時非流 動性下塡料1 9 0是相鄰於該電力接點、晶粒丨〗〇和基板 -11 - * 1304006
100。 於習知的製造技術下，焊劑塊1 04通常會包括以鉛爲 主的焊劑，如之前所討論的。這類焊劑一般會在該封裝元 件經常曝露的整個溫度範圍內呈現良好的可塑性，（即非 常具有延展性）。因此，由於墊剝落和ILD龜裂引起的喪 失功能十分少見。 然而，使用以鉛爲主的焊劑對於許多製造的產品不再 φ 是得以持續的選擇，比如設計要銷售至歐洲國家的產品。 因此，用於這些產品的焊劑塊必須是無鉛的材料，如以上 所討論，S η - A g - C u合金已經成爲取代以鉛爲主焊劑的最 佳選擇焊劑。但在應用上也發生一些問題，因爲Sn-Ag-Cu焊劑相較於以鉛爲主的焊劑，並沒有呈現良好的可塑 性，會導致以上討論的喪失功能之結果。 相位改變無鉛超可塑性焊劑 • 根據本發明之原理，揭示一種結合超可塑性的無鉛焊 劑。一實施例中，該無鉛焊劑包括一種Sii-In合金，其中 重量百分比的比値wt · %是4 -1 5 %的I η ( 8 5 - 9 6 wt · %的S η ) 。而超可塑性是由於該Sn-In合金從其軟融溫度冷卻至室 溫時發生的相位變化，此相位變化戲劇性地降低了覆晶組 合物和類似物件相關的剩餘應力之問題。 圖2是Sn-In合金系統的相位圖。當In對Sn比値是 4-1 5%的重量百分比，其中由一高溫集結的六角形T相位 轉變至較低溫yS _Sn的bet (以主體爲中心的四角形）。 -12- (10) ‘1304006 此示範呈現該相位轉變可能會發生變成一 Martensite轉變 ，（Y. Koyama，H.suzuki 和 0. Nittono 著作 Scripta
Metallurgica第18冊第715至717頁1 984年出版）。本 發明之創作者發現，此Martensite轉變是4-15 %重量百分 比的Sn-In合金相關其用於焊劑接合之一具有優點的特性 。比較明確地，根據Martensite轉變，塊狀焊劑會以補償 接合元件，比如一晶粒與一基板之間CTE不吻合的方式 φ 增長，且在焊劑接合處引起極小的應力。此外，也會使得 該內層電介質的應力降低。這些改善的焊劑特性能夠提升 封裝件的可靠性。 圖3顯示的一繪製圖呈現在分子層次的相位變化。於 較高的溫度下，該Sn-Iri合金晶格結構是對應至集結的六 角形7相位bco (以主體爲中心的正交斜方晶系）結構 300。此結構中，每個平面的角落是由Sn原子302 (淺色 )和In原子3 04 (深色）交替地佔有，這些原子是沿著 春一平面軸以一距離“ a ”以及另一平面軸以距離“，3 a ” 隔開，而這些平面是以一距離“ c”間隔分開，因此Sn平 面之間的距離是2c。當該合金冷卻時，會發生從7相位 的bco結構3 00至/3 -Sn的bet (以主體爲中心的四角形 )結構3 06之相位轉變。此結果是來自於In原子相對Sn 原子移動a/4。同時，平面之間的距離減小使得兩個Sn平 面之間的距離縮小爲，3 a。此結果是該晶格結構在一個方 向縮短，而在其垂直方向增長。 圖4顯示幾種Sn-In合金於一正常冷卻範圍內的相位
-13- (11) 1304006 轉變行爲。當溫度降低時，有較多r的bco相位轉變至 冷-Sn的bet相位。進一步注意到，當In的重量百分比降 低，於一給定溫度下相位轉變的百分比即增加。結果一特 定Sn-In合金的可塑性行爲就能夠改變以適合其所要使用 情況的目標應用。 本發明的另一形態是關於該合金冷卻時所發生的 Martensite轉變。一般來說，Martensite和“硬化”轉變 φ 是關於無擴散性的結晶變化，其用於改變合金的材料性質 。德國的金屬結構學家 A. Martens首先辨認此一結晶變 化於鐵-碳質的鋼內，因此在他之後以Martensite命名。 依照硬化轉變的型態而定，其一般是隨著該合金的元 素和/或熱處理的參數而有所不同，硬化轉變可以形成片 狀、針狀、或樹葉似的結構於新的相位內。該Martensite 結構改變了該合金的材料性質，例如：通常會以熱處理鋼 在磨損表面形成Martensite，比如刀面和類似處。於此種 ^ 用途之下，該硬化結構包括一種硬化的材料於鋼的表面是 非常抗磨損。雖然增加的硬度通常會有幫助，但缺點是喪 失其延展性：硬化鋼一般是歸類於易碎的材料，（相較於 對應至鋼合金的非硬化相位，比如回火處理的鋼）。 雖然硬化鋼呈現易碎的（即非延展性的）行爲，其他 硬化合金也展現大致不同的行爲，包括超可塑性。例如： 一些記憶式金屬，（即有一類的金屬能夠在改變形狀後回 復至原來沒有變形的型態），使用一硬化的相位。此實例 中，於Martensite可變形性在金屬結構學的理由是認爲該 -14- (12) 1304006 相位的“成對相似”結構，其成對相似的界線不需太多外 力、也不需位置變化的格式就能夠移動，其通常是看成啓 始材料的裂縫。 此結構的另一個優點爲該材料不具有張力硬化的傾向 ’其容易導致延展性隨著時間而降低，尤其是材料曝露在 張力循環的狀態下。此循環是發生於上述覆晶應用中該晶 粒的溫度循環之結果。因此，一習知的焊劑會隨著時間而 • 變硬，導致疲勞性龜裂形成而最終失去接合的功能。 硬化相位轉變結果的顯微結構之詳細狀況顯示於圖5 和6。圖5呈現Sn_7In (即7wt·%的In)合金曝露至空氣 冷卻的一顯微掃描圖。注意掃描圖中心部分顯示的“針狀 ’’似結構，而圖6顯示S η - 91 η的一硬化相位轉變之結果 ’於一壓制的應力之下形成。此情況中，該硬化結構的方 向與該材料的張力重合。 矽（Si)和Sn-7In的移位性質相對於溫度的關係顯 # 示於圖7。如圖中顯示，Si的相對移位大致是爲溫度變化 的面鏡成像效果，就如所期望不變的CTE値。剛開始， 該Sn-7In合金呈現一相似比例的行爲，直到溫度下降至 約攝氏80至70度的範圍內。於此時間座標中發生一硬化 轉變。該轉變發生之後，該Sn-7In合金的移位甚至是溫 度繼續降低也能保持大致不變。 圖6和7中顯示的行爲，可以直接應用至上述討論的 該覆晶CTE不吻合之問題。如上所討論，當該組合物冷 卻時，該晶粒與基板材料之間的CTE不吻合，會導致該 -15- (13) 1304006 焊劑塊上引發的張力。然後在該塊狀焊劑材料內也產生應 力，比較重要的是在焊劑塊/墊交界面處。當具有所揭示 重量比例的Sn-In焊劑使用於此，在應力之下即發生一硬 化相位變化。因此，該塊狀焊劑於該焊劑冷卻時會在該應 力的方向上增長，大致消除來自該CTE不吻合所引起的 該焊劑塊內剩餘應力。 除了上述討論的該Sn-In合金組份之外，這些合金可 φ 以加入少量的各種金屬來改變以產生目標行爲，例如：可 以加入少量（就是<2wt·% )的Sb，Cu，Ag，Ni，Ge和A1， 而能進一步使該剛鑄造的微結構變得細緻，並改善熱穩定 性。這些最佳組份金屬的特別重量百分比，通常是隨著該 焊劑將要使用的特殊應用狀況而定，此類因素包括焊劑軟 融溫度、可塑性要求、期望的熱循環溫度範圍等。 在此敘述的超可塑性焊劑合金不只十分具有延展性， 而且能夠抵抗碎裂。典型的碎裂承載之下，（就是由於溫 Φ 度循環的循環性引發張力），一習知的焊劑遭受其結構的 變化。該結構變化會隨著時間減弱該塊狀材料，最終導致 功能喪失。相較之下，由於該相位變化機制產生的該超可 塑性焊劑合金之變形，不會對該塊狀材料造成一相似程度 的損壞。結果，該超可塑性焊劑合金就可以成功地用於正 常情況下以習知焊劑執行時會導致碎裂且失去功能之應用 上。 具有小顆粒微結構的無鉛焊劑
(S (14) 1304006 另一揭示的實施例中，該無鉛焊劑可以是一小顆粒微 結構的Sn-In合金。一小顆粒微結構具有的一平均顆粒大 小是約小於直徑5微米。爲形成一小顆粒微結構的Sn-In 合金，將Sn-In合金從其熔點以上的溫度以每秒攝氏3度 的速率急速冷卻至室溫。一實施例中，該冷卻可以空氣冷 卻完成。在一實施例，該 Sn-In合金可以包含約12%至 18%重量百分比的In和82%至88%重量百分比的Sn。少 φ 量（少於約3%重量百分比）的其他元素，比如Cu，Ag和 Ni也可以加入。該合金一實施例中，該合金可以包含 85%重量百分比的 Sn，14%重量百分比的In，和 1%重量 百分比的銅。 當該Sn-In合金快速地冷卻時會形成小顆粒，以取代 當該合金緩慢冷卻時形成的晶格結構。一實施例中，該 Sn-In合金是以每秒大於攝氏3度的速率冷卻。此一實施 例中，該小顆粒微結構的顆粒平均大小約是直徑3微米， φ 而最大顆粒是約直徑5微米。 一小顆粒微結構的Sn_In合金具有優異的特性，以提 供元件一低應力接附和高度的抗碎裂性。該合金的小顆粒 微結構容許該小顆粒於該塊狀材料受到一應力時在顆粒邊 界運動，而能給予該材料一相當低的引發應力和高度的抗 碎裂性。該小顆粒微結構Sn-In合金可以在應力之下具有 延展性，而且會吸收由組合時冷卻以及操作時溫度循環、 還有上述元件CTE不吻合所造成的大部分應力。 一小顆粒微結構的Sn_In合金，也可以提供電力連接 -17- (15) '1304006 元件優異的特性，比方一晶粒與一基板之間，如圖1和圖 8所示。爲能夠在長時間內提供連續且適當操作的電力連 接，該焊劑需要良好的電移動電阻。當高電流通過該焊劑 接合時，電移動會由於電子動量導致該金屬結構中的空洞 或阻礙，而造成一導體內品質降低或失去功能。一般來說 ，小顆粒的尺寸可以提供顆粒邊界擴散較多的管道以降低 電移動電阻。一實施例中，額外的Cii能夠增加該Sn-In 鲁焊劑的電移動電阻。 具有一小顆粒微結構的Sn-In合金，與一毛細管型式 的下塡料或一非流動性的下塡料使用時，可以提供助益。 特別地，典型Sn-Ag爲主的焊劑具有約攝氏220度的熔點 ’要求的一高峰軟融溫度約攝氏23 0度或較高。目前的非 流動性下塡料於此溫度會有產生空洞的傾向，其降低該下 塡料的品質功效。一 Sn-Iii合金相較於此類其他焊劑（就 是Sn-Ag-Cii合金）的優點，在於需要形成該Sn-In焊劑 • 軟融的溫度是大致降低。許多本發明之一實施例中，該 Sn-In焊劑約在攝氏195度熔化，而且使用的製程溫度約 是攝氏195至225度。在一實施例中，製程溫度可以使用 攝氏2 1 0至2 1 5度。較低的製程溫度於該非流動性的下塡 料可以提供較少的空洞位置，相較於使用一 Sn-Ag-Cu合 金在攝氏235度的一標準製程溫度。 先前敘述Sn-In合金的實施例可以應用至其他型式的 焊劑接合，例如：類似該覆晶CTE不吻合的問題，會導 致BGA封裝件接合喪失功能。此實例中，該CTE的不吻 -18- (16) 1304006 合是介於該封裝材料與其將要依附的該電路板之間，通常 是一陶製或類似材料和一多層的光纖玻璃。一般來說，該 焊劑可以用於結合具有CTE不吻合的可焊接材料。另一 實例包括將一整合的散熱座（HI S )結合至一晶粒。此實 例中，該焊劑可以進一步執行用於習知HIS至晶粒鍋合的 熱交界面材料之功能。 本發明之呈現實施例的以上敘述，包括在摘要中所述 φ ，並不具有排除性，或者爲了限制本發明於所揭示的明確 形式。而本發明之特定實施例和實例在此敘述是以呈現爲 目的，各種等同性質的修改都可能在本發明的範圍之內， 如相關技術領域的技術人員所理解。 這些修改能夠在以上詳細敘述的啓發之下加諸於本發 明。下列申請專利項所使用的詞句不應該成爲限制本發明 於規格和該申請項所揭示的特定實施例內，而是本發明之 範圍應該完全由下列申請專利項決定，其根據所建立的解 φ 讀申請專利項文件架構。 【圖式簡單說明】 本發明的上述方面以及許多所附優點將比較能夠理解 ，而且參考以上詳細敘述同時參看所附圖式會更加瞭解， 其中相似的參考數字在各式不同的視野圖中代表相似的部 分，除了特別提及之外： 圖1 a至1 C顯示一習知的覆晶組合步驟之截面圖，其 中圖1 a呈現在一焊劑軟熔溫度的狀態，圖1 b呈現該組合 -19- (17) 1304006 物已經冷卻後的狀態，以及圖1 c呈現加入一下塡料並在 該組合物上方模製形成一蓋罩之後的狀態； 圖2是對應至一 Sn-In合金的相位圖； 圖3是顯示一 Sn-In合金於其從一高溫冷卻至一低溫 時晶格結構變化的繪製圖； 圖4是顯示相位變化的相對百分比對於溫度以及Sn-In重量比値的圖形； 圖5是一顯微掃描圖顯示一 Sn-7In合金於空氣冷卻 以形成 Martensite; 圖6是一顯微掃描圖顯示於一壓制應力下形成的Sn-91η硬化相位轉變結果；以及 圖7是顯示矽（Si)和Sn-7In的移位特性對於一典 型冷卻速率下的溫度之關係圖。 圖8是根據本發明之一實施例呈現一種裝置的截面圖 〇 圖9A和9B是根據本發明之一實施例呈現一種方法 的截面圖。 圖10A和10B是根據本發明之~實施例呈現—種方 法的截面圖。 【主要元件符號說明】 1 0 0 :基板 102、 112 :墊 104 :焊劑塊 -20 (18) (18)1304006 1 〇 6 :焊劑球 108 :引線 1 1 〇 :(積體電路）晶粒 1 14 :內層電介質 1 1 6 :下塡料 1 18 :蓋罩 1 8 0 :導電接點 190 :非流動性下塡料

Claims (1)

  1. β04006
    十、申請專利範圍 附件2Α : 第94 1 27897號專利申請案 中文申請專利範圍替換本 民國97年3月5日修正 1.一種焊劑連接裝置，包含 複數個導電接點於一晶粒的至少一表面上；以及 一基板以一含有錫和銦的焊劑導電地耦合到該等導電 接點的至少一個。
    2 ·如申請專利範圍第1項之裝置，其中： 該焊劑包含約82%至88%重量百分比的錫與約12%至 18%重量百分比的銦。 3 ·如申請專利範圍第2項之裝置，其中： 該焊劑包含約少於3%重量百分比的銅、銀、或鎳之 中至少一種。 4·如申請專利範圍第3項之裝置，其中·· 該焊劑包含約85 %重量百分比的錫、約14%重量百分 比的銦、以及約1 %重量百分比的銅。 5 ·如申請專利範圍第4項之裝置，其中： 該焊劑包括一小顆粒微結構以增加電移動電阻。 6 .如申請專利範圍第1項之裝置，其中： 該焊劑包含一種具有一小顆粒微結構的焊劑。 7 ·如申請專利範圍第6項之裝置，其中： 該小顆粒的微結構包括~種具有平均約3微米直徑的 小顆粒之小顆粒微結構。 1304006 8 ·如申請專利範圍第1項之裝置，其中： 該導電接點包含銅。 9 .如申請專利範圍第1項之裝置，進一步包含·· 一下塡料於該晶粒與該基板之間。 10.如申請專利範圍第9項之裝置，其中： 該下塡料包含至少一種毛細管下塡料，或一種非流動 下塡料。
    1 1 . 一種焊接方法，包含： 將一晶粒和一基板，該晶粒包括複數個導電接點於該 晶粒的至少一表面上，以及該基板包括複數個含有錫和銦 的焊劑塊於該基板的至少一表面上，加熱至高於該焊劑塊 的熔點以上之溫度； 將該等導電接點的至少一個與該等焊劑塊的至少一個 接觸；以及 冷卻該晶粒和該基板以形成至少一連接。 12.如申請專利範圍第1 1項之方法，其中： 該溫度約是攝氏195至225度。 1 3 ·如申請專利範圍第1 1項之方法，其中： 該溫度約是攝氏2 1 0至2 1 5度。 14.如申請專利範圍第1 1項之方法，其中： 冷卻該晶粒和該基板包括以大於每秒約攝氏3度的速 率冷卻該晶粒和該基板。 1 5 .如申請專利範圍第1 1項之方法，其中： 冷卻該晶粒和該基板的步驟包括利用空氣冷卻以冷卻 -2- 1304006 該晶粒和該基板。 16.如申請專利範圍第n項之方法，其中： 該焊劑塊包含約82%至88%重量百分比的錫與約12% 至18%重量百分比的銦。 17·如申請專利範圍第16項之方法，其中： 該焊劑塊包含少於約3 %重量百分比的銅、銀、或鍊 之中至少一種。
    18·如申請專利範圍第17項之方法，其中： 該焊劑塊包含約85 %重量百分比的錫、約14%熏纛百 分比的銦、以及約1 %重量百分比的銅。 1 9·如申請專利範圍第丨〗項之方法，其中： 該連接包括一種具有平均約3微米直徑小顆粒的小顆 粒微結構。 20·—種焊劑連接裝置，包括： 一第一元件以一種含有錫和銦的小顆粒微結構之焊劑 接附至一第二元件， 其中： 該第一元件包括一微電子晶粒以及該第二元件包括一 整合的散熱座。 2 1 ·如申請專利範圍第20項之裝置，其中： 該焊劑包含約85%重量百分比的錫，約14%重量百分 比的銦，以及約1 %重量百分比的銅。 22·—種焊劑連接裝置，包括： 一第一元件以一種含有錫和銦的小顆粒微結構之焊劑 -3- 1304006 接附至一第二元件， 其中： 該第一元件包括一微電子晶粒以及該第二元件包括一 封裝基板。 2 3.如申請專利範圍第22項之裝置，其中： 該焊劑包含約85%重量百分比的錫，約14%重量百分 比的銦，以及約1 %重量百分比的銅。
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