TWI393271B - Optoelectronic semiconductor device - Google Patents

Description

Photoelectric semiconductor device

The present invention relates to an optoelectronic semiconductor device, and more particularly to an optoelectronic semiconductor device having a contact layer and a discontinuous region, and a pattern layout associated with the discontinuous region.

A structure of a conventional light-emitting diode includes a growth substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer between the two semiconductor layers. A reflective layer for reflecting light from the luminescent layer is selectively formed in the structure. In order to improve at least one of the optical, electrical, and mechanical properties of the light-emitting diode, a suitably selected material may be used to replace the growth substrate as a carrier for carrying other structures other than the growth substrate, such as metal or germanium. Instead of growing a nitride sapphire substrate. The growth substrate can be removed using etching, grinding, or laser removal. However, the growth substrate may also be retained wholly or only partially and combined with the carrier. In addition, the light-transmissive oxide can also be integrated into the light-emitting diode structure to enhance the current dispersion performance.

A high luminous efficiency light-emitting element 100 is disclosed in Taiwan Patent No. I237903. As shown in FIG. 1, the structure of the light-emitting element 100 includes a sapphire substrate 110, a nitride buffer layer 120, an n-type nitride semiconductor stack 130, a nitride multiple quantum well light-emitting layer 140, and a p-type nitride semiconductor stack 150. And an oxide transparent conductive layer 160. Further, a hexagonal taper hole structure 1501 is formed on the surface of the p-type nitride semiconductor layer 150 facing the oxide transparent conductive layer 160. The inner surface of the hexagonal taper hole structure 1501 is apt to be in ohmic contact with the oxide transparent conductive layer 160 such as indium tin oxide (ITO), cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. . Therefore, the forward voltage of the light-emitting element 100 is maintained at a lower level, and the light extraction efficiency can also be improved by the hexagonal taper hole structure 1501.

The ITO may be formed on the hexagonal taper hole structure 1501, the semiconductor layer, or both by electron beam evaporation (Sputtering) or sputtering. The optical, electrical properties, or both of the ITO layers formed by different manufacturing methods may also be different. For related documents, refer to the Taiwan Patent Application No. 096111705, which is hereby incorporated by reference. One part. Under the Scanning Electron Microscope (SEM), the ITO particles 1601 formed by electron beam evaporation method do not completely fill the hexagonal cone cavity structure 1501, and present a plurality of voids existing between the ITO particles, such as Figure 2 shows. These voids may cause light to be confined out of the illuminating element and gradually absorbed by the surrounding ITO. Or, therefore, a medium having a refractive index smaller than ITO, such as air, is present in the voids such that light entering the ITO encounters total reflection at the material boundary and cannot leave the ITO layer, but is gradually absorbed by the ITO.

The relationship between the transmittance and the wavelength of ITO has been studied by C.H. Kuo in the article "Nitride-based near-ultraviolet LEDs with an ITO transparent contact" proposed by Materials Science and Engineering B in 2004. It was found that when the wavelength is lower than about 420 nm, the ITO penetration rate tends to drop sharply, and may even be lower than 70% at 350 nm. For the blue light band, ITO has a transmittance higher than 80%, but the transmittance in the near ultraviolet or ultraviolet band is not ideal.

Therefore, transparent oxides such as ITO are commonly used as materials for semiconductor light-emitting elements, and there is still much room for improvement in optical and electrical performance of the elements.

An optoelectronic semiconductor device according to an embodiment of the invention includes a conversion portion including a first side; an electrical contact; a contact layer having an outer boundary; and at least three consecutive discontinuous regions along the outer boundary Forming, and having at least one different element; wherein the electrical contact, the contact layer, and the discontinuous region are formed on the first side of the conversion portion.

An optoelectronic semiconductor device according to other embodiments of the present invention is disclosed as follows: The elements in the optoelectronic semiconductor device include one of an angle, a length, a width, a depth, and a pitch. The electrical contact in the optoelectronic semiconductor device includes a portion, a portion, and an end portion. The electrical contacts in the optoelectronic semiconductor device include an area for connection to an external circuit. The electrical contacts and discontinuous regions in the optoelectronic semiconductor device have at least one intersection in a projection direction.

The optoelectronic semiconductor device further includes a current blocking region located at least below one of the discontinuous regions. Each discontinuous region in the optoelectronic semiconductor device has only one opening on the outer boundary. The discontinuous region in the optoelectronic semiconductor device includes at least one current blocking region.

An optoelectronic semiconductor device according to another embodiment of the present invention includes a conversion portion; a first electrical contact is adjacent to the conversion portion; and a second electrical contact is formed between the first electrical contact and the first electrical contact The two ends; a contact layer having an outer boundary; and a plurality of discontinuous regions originating from the outer boundary and substantially conforming to the electrical contact type.

An optoelectronic semiconductor device according to other embodiments of the present invention is disclosed as follows: the distance between each discontinuous region in the optoelectronic semiconductor device and the nearest nearest electrical contact is substantially the same. The first electrical contact and the second electrical contact in the optoelectronic semiconductor device are respectively located on opposite sides of the conversion portion. The first electrical contact and the second electrical contact in the optoelectronic semiconductor device may be located on the same side of the conversion portion. The optoelectronic semiconductor device further includes an ohmic contact region located under the contact layer, the discontinuous region, or both.

At least one of the discontinuous regions in the optoelectronic semiconductor device deviates from an overall trend. At least one of the first electrical contact and the second electrical contact in the optoelectronic semiconductor device is bilaterally symmetric. At least two of the discontinuous regions in the optoelectronic semiconductor device have a common opening on the outer boundary.

An optoelectronic semiconductor device according to still another embodiment of the present invention includes a conversion portion including a first side, an electrical contact on a first side of the conversion portion, a contact layer having an outer boundary, and a plurality of The contiguous zone is oriented from the outer boundary towards the electrical contact and exhibits an irregular change in one dimension.

The optoelectronic semiconductor device according to other embodiments of the present invention is disclosed as follows: The contact layer and the discontinuous region in the optoelectronic semiconductor device are located between the electrical contact and the conversion portion. The discontinuous region in the optoelectronic semiconductor device includes at least one of geometric, material, physical, and chemical properties that are discontinuous. The optoelectronic semiconductor device further includes an ohmic contact region located under the contact layer, the discontinuous region, or both, and includes a convex space, a recessed space, or both, and the geometry of the space includes a pyramid, a cone, At least one of the flat heads.

An optoelectronic semiconductor device according to an embodiment of the invention includes a substrate having an area greater than or equal to 45 mils by 45 mils; a first electrical contact comprising: a first root portion and two or more end portions And a second root portion separated from the first root portion and electrically connected to the two or more ends; a second electrical contact comprising at least two root portions and a plurality of end portions; and a conversion portion And being between the substrate and the second electrical contact; wherein at least two of the ends of the second electrical contact are between the two adjacent ends of the first electrical contact.

In addition, the embodiment of the present invention also discloses that the first root portion and the second root portion of the first electrical contact are connected to each other.

At least one of the first root portion and the second root portion of the first electrical contact in the optoelectronic semiconductor device is electrically connected to at least one of the plurality of ends by at least one portion.

The second electrical contact in the optoelectronic semiconductor device further includes a first portion, a first end, a second end, and a trunk, the first end is connected to at least one of the two portions, the backbone and the plurality At least one of the ends is connected.

The optoelectronic semiconductor device further includes a current blocking region located below the second electrical contact.

The optoelectronic semiconductor device further includes a platform, and the first electrical contact is formed on the platform.

The optoelectronic semiconductor device further includes a contact layer between the second electrical contact and the conversion portion and including a discontinuous region.

A current channel according to another embodiment of the present invention provides a current through a conversion portion, including a first electrical contact; and a second electrical contact, including at least two roots and a plurality of ends; The first electrical contact includes a first root electrically connected to the two or more ends; and a second root separated from the first root and electrically connected to the two or more ends; At least two of the ends of the second electrical contact are present between any two adjacent ends of the first electrical contact.

The embodiment of the present invention is also disclosed as follows: the conversion portion in the current channel includes a first surface and a second surface, the first surface is electrically connected to the first electrical contact, and the second surface is electrically connected to The second electrical contact.

The two roots of the second electrical contact in the current path are connected to each other.

Embodiments of the invention are described below in conjunction with the drawings.

The optoelectronic semiconductor device 10 as shown in FIG. 3 includes a semiconductor system formed on a substrate 11. Semiconductor systems include semiconductor components, devices, products, circuits, or applications that can perform or induce photovoltaic energy conversion. Specifically, the semiconductor system includes a light-emitting diode (LED), a laser diode (LD), a solar cell (Solar Cell), a liquid crystal display (Liquid Crystal Display), and an organic light emitting device. At least one of the Organic Light-Emitting Diodes. The term "semiconductor system" in this specification does not limit that all subsystems or units in the system are made of semiconductor materials. Other non-semiconductor materials such as metals, oxides, insulators, etc. can be selectively integrated into the semiconductor. In the system.

In one embodiment of the invention, the semiconductor system includes at least a first electrical layer 13, a conversion portion 14, and a second electrical layer 15. The first electrical layer 13 and the second electrical layer 15 are different in electrical, polarity or dopant of at least two of the two, or are used to provide a single layer or multiple layers of electrons and holes, respectively. "Multilayer" means two or more layers, the same applies below.) If the first electrical layer 13 and the second electrical layer 15 are composed of a semiconducting conductor material, the electrical selection may be p type, n A combination of at least any of the type and the i type. The conversion portion 14 is located between the first electrical layer 13 and the second electrical layer 15 and is a region where electrical energy and light energy may be converted or induced to be converted. Those who convert or induce light energy are such as light-emitting diodes, liquid crystal displays, and organic light-emitting diodes; those that convert or induce light energy are such as solar cells and photodiodes.

In the case of a light-emitting diode, the spectral spectrum of the converted light can be adjusted by changing the physical or chemical configuration of one or more layers in the semiconductor system. Commonly used materials are such as aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series and the like. The structure of the conversion portion 14 is, for example, a single heterostructure (SH), a double heterostructure (DH), a double-side double heterostructure (DDH), or a multi-layer quantum well (multi- Quantum well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the wavelength of the illumination.

The substrate 11 is used to grow or carry a semiconductor system. Suitable materials include, but are not limited to, germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), sapphire, bismuth carbide (SiC), germanium. (Si), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, composite, diamond, CVD diamond, and diamond-like carbon ( Diamond-Like Carbon; DLC), etc.

A transition layer 12 is more selectively included between the substrate 11 and the semiconductor system. The transition layer 12 is interposed between the two material systems to "transition" the material system of the substrate to the material system of the semiconductor system. For the structure of the light-emitting diode, on the one hand, the transition layer 12 is a material layer such as a buffer layer or the like for reducing the lattice mismatch between the two materials. On the other hand, the transition layer 12 may also be a single layer, a plurality of layers or a structure for combining two materials or two separate structures, such as organic materials, inorganic materials, metals, and semiconductors; Optional structures such as: reflective layer, thermally conductive layer, conductive layer, ohmic contact layer, anti-deformation layer, stress release layer, stress adjustment layer, bonding layer, A wavelength conversion layer, a mechanical fixing structure, and the like.

A contact layer 16 is more selectively formed on the second electrical layer 15. The contact layer 16 is disposed on a side of the second electrical layer 15 away from the conversion portion 14 . In particular, the contact layer 16 can be an optical layer, an electrical layer, or a combination of both. The optical layer can change the electromagnetic radiation or light from or into the conversion portion 14. As used herein, "change" means changing at least one optical property of electromagnetic radiation or light, including but not limited to frequency, wavelength, intensity, flux, efficiency, color temperature, rendering index, light field. (light field), and angle of view. The electrical layer may cause at least one of the voltage, resistance, current, and capacitance of the opposite side of the contact layer 16 to change or change in value, density, or distribution. The constituent material of the contact layer 16 comprises an oxide, a conductive oxide, a transparent oxide, an oxide having a transmittance of 50% or more, a metal, a relatively light-transmissive metal, a metal having a transmittance of 50% or more, an organic substance. At least one of inorganic, phosphor, phosphor, ceramic, semiconductor, doped semiconductor, and undoped semiconductor. In some applications, the material of the contact layer 16 is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. In the case of a relatively light-transmissive metal, the thickness is about 0.005 μm to 0.6 μm, or 0.005 μm to 0.5 μm, or 0.005 μm to 0.4 μm, or 0.005 μm to 0.3 μm, or 0.005 μm to 0.2 μm, or 0.2 μm. 0.5 μm, or 0.3 μm to 0.5 μm, or 0.4 μm to 0.5 μm, or 0.2 μm to 0.4 μm, or 0.2 μm to 0.3 μm.

An ohmic contact region 151 may be formed over the second electrical layer 15 in some cases. When the second electrical layer 15 and the contact layer 16 are in direct or indirect contact via the ohmic contact region 151, an ohmic contact may be formed therebetween, or a driving voltage, a threshold voltage, and a positive voltage of the optoelectronic semiconductor device 10 may be formed. At least one of the forward voltage drops. The possible form of the ohmic contact region 151 is a depression or a bump. The recess is exemplified as the ohmic contact region 151 of Fig. 3; the bump is exemplified by the ohmic contact region 151 of Fig. 4. Possible geometries of the recessed space are pyramids, cones, truncated cones, cylinders, cylinders, hemispheres, irregularities or any combination thereof. Possible geometries of the protrusions are pyramids, cones, truncated cones, cylinders, cylinders, hemispheres, irregularities or any combination thereof. In addition, the ohmic contact regions 151 are formed of a single or similar protrusion or depression as shown, but are not excluded and may be composed of a combination of protrusions and depressions. In a particular embodiment, the raised, recessed spaces, or both are hexagonal cones. At least a portion of the contact layer 16 in contact with the ohmic contact region 151 forms an ohmic contact. The particular lattice direction or surface energy state of the bevel on the pyramid is one of the possible causes of ohmic contact or lower energy barrier. On the other hand, a portion of the surface of the second electrical layer 15 where the ohmic contact region 151 is not formed may form a poor ohmic contact, a non-ohmic contact, or a Schottky contact with the contact layer 16, however, this portion is The possibility of forming an ohmic contact is not excluded between the contact layers 16. The ohmic contact region 151 may form a background and some embodiments may be referred to the applicant's Taiwan Patent No. I237903, which is incorporated herein by reference.

The contact layer 16 may be a discontinuous or patterned single layer or multiple layers in addition to a continuous single layer or multiple layers. For a related patent, reference is made to the Taiwan Patent Application No. 096111705, which is hereby incorporated by reference. "Discontinuous" means at least one of geometry, material, physical properties, and chemical properties that is discontinuous. Geometric discontinuity refers to at least one of discontinuity in length, thickness, depth, width, period, outer shape, and internal structure. Discontinuity of the material means that at least one of the density, composition, concentration, and manufacturing method is discontinuous. Physical discontinuity refers to at least one of electrical, optical, thermal, and mechanical properties that are discontinuous. Chemical discontinuity refers to discontinuity of at least one of dopant, activity, acidity, and alkalinity. As shown in FIGS. 3 and 4, a discontinuous region 161 is formed on the contact layer 16. If the material is discontinuous, the material in the discontinuous region 161 may not be in ohmic contact with the second electrical layer 15, the ohmic contact region 151, or both. The optical properties of the discontinuous region 161 may also be different from the contact layer 16. Optical properties such as transmittance, refractive index, and reflectivity. The energy flow or light intensity exiting or entering the conversion portion 14 can be increased by selecting a suitable discontinuous region 161 material. For example, the discontinuous region 161 is an air gap through which light from the conversion portion 14 can exit the optoelectronic semiconductor device 10 without being absorbed by the contact layer 16. If at least one of the first electrical layer 13, the conversion portion 14, and the second electrical layer 15 is formed with a regular pattern structure, an irregular pattern structure, a roughened structure, a photonic crystal, or any combination thereof may also be improved by The energy flow or light intensity of the continuous zone 161. As shown in FIGS. 3 and 4, if the material of the second electrical layer 15 in contact with the discontinuous region 161 has a large refractive index, the ohmic contact region 151 may destroy the entire light at the refractive index interface. The reflection increases the light extraction of the discontinuous area 161.

If the optoelectronic semiconductor device 10 is configured as shown in FIG. 3 or FIG. 4, a second electrical contact 17 can be selectively formed on the second electrical layer 15 or the contact layer 16 for the first A first electrical contact 18 can be selectively formed on the layer 13. The electrical contact is a single layer or a multi-layer structure, and is an interface in which the optoelectronic semiconductor device 10 is electrically connected to an external line. Electrical contacts can be connected to external lines by wiring or directly to external lines.

In addition, electrical contacts may also be disposed on other sides of the optoelectronic semiconductor device 10. For example, the first electrical contact 18 may be disposed under the first electrical layer 13 , the transition layer 12 , or the substrate 11 , or at least one of the first electrical layer 13 , the transition layer 12 , and the substrate 11 . The side. In other words, the first electrical contact 18 and the second electrical contact 17 are respectively located on surfaces opposite or perpendicular to each other. In still another embodiment, the second electrical contact 17 can be disposed on a side of the second electrical layer. In a further embodiment, the first electrical contact 18, the second electrical contact 17, or both of them may be disposed on the first electrical layer 13 by using a via, an insulating material, or both. The transition layer 12, or the side or surface of the substrate 11.

Several embodiments of electrical contacts, ohmic contact regions, and discontinuous regions are described below. Although the second electrical layer 15 and the second electrical contact 17 are taken as an example, the following embodiments are not applicable to the first electrical layer 13 and the first electrical contact 18, or other A type of optoelectronic semiconductor device.

As shown in FIG. 5, the contact layer 16 is formed on the second electrical layer 15, the second electrical contact 17 is formed on the contact layer 16, and the discontinuous region 161 is distributed on the second electrical contact 17. around. The distribution is such that the current from the electrical contact 17 flows as much as possible laterally to the outer edge of the contact layer 16, or the percentage of current density difference between the lower of the electrical contact 17 and the outer edge of the contact layer 16 Less than 60%, 50%, 40%, 30%, 20%, or 10%. For example, the current density under the electrical contact is xA/cm ² , the current density of the outer edge of the contact layer 16 is yA/cm ² , and the percentage of the current density difference is ∣xy∣/(the greater of x and y) %.

Figure 5(a) discloses the pattern of two discontinuous regions 161, which may coexist or exist alone. The contact layer 16 on the right side of the second electrical contact 17 does not overlap with the discontinuous region 161; the contact layer 16 on the left side of the second electrical contact 17 overlaps the discontinuous region 161, and the contact layer 16 and the second electrical layer There is a third substance or structure in the 15th. Specifically, the discontinuous region 161 or the third substance or structure is an insulating material such as air or oxide, or a non-conductor with respect to the contact layer, or a Bragg reflector or anti-reflection. )Floor. Further, the refractive index of the third substance may be between the second electrical layer 15 and the contact layer 16. At least one of the contact layer 16 , the second electrical layer 15 , the conversion portion 14 , the first electrical layer 13 , the transition layer 12 , and the substrate 11 under the second electrical contact 17 can selectively form an insulation. The region 152 is such that the current from the second electrical contact 17 is outwardly dispersed. However, the position of the insulating region 152 in the drawings is merely illustrative and is not intended to limit the embodiments of the present invention. The size of at least one of the contact layer 16 and the insulating region 152 under the second electrical contact 17 is approximately equal to or slightly larger than the size of the second electrical contact 17, wherein the contact under the second electrical contact 17 The layer 16 size refers to the diameter of the smallest virtual circle surrounded by the discontinuity 161 by the contact layer 16 located around or below the second electrical contact 17. As shown in FIG. 5(b), the second electrical contact 17 is buried in the contact layer 16. As shown in FIG. 5(c), the second electrical contact 17 is buried in the contact layer 16, and the surface of the electrical contact 17 in contact with the contact layer 16 is formed into a regular surface structure. The irregular surface structure, or both, increases the contact area between the electrical contacts 17 and the contact layer 16. For example, the contact surface 171 between the electrical contact 17 and the contact layer 16 is formed as a rough surface to increase the contact area with each other. A larger contact area may increase the structural stability of the electrical contacts 17, or may allow more current to pass.

6(a) to 6(c) disclose another configuration of electrical contacts. For the configuration or implementation of the discontinuous region 161, please refer to the related description of FIG. The second electrical contact 17 is formed directly on the second electrical layer 15 , in other words, there is no contact layer 16 between the electrical contact 17 and the second electrical layer 15 . The surface of the electrical contact 17 in contact with the contact layer 16, the second electrical layer 15, or both is formed as a regular surface structure, an irregular surface structure, or a combination of both to increase electrical properties. The contact area between the contact 17 and other parts. A larger contact area may increase the structural stability of the electrical contacts 17 or allow more current to pass. An insulating region 152 may be formed under the second electrical contact 17. The insulating region 152 is approximately equal to or slightly larger than the size of the second electrical contact 17.

Figure 7 is a diagram showing an optoelectronic semiconductor device in accordance with another embodiment of the present invention. In the present embodiment, the discontinuous region 161 includes a filler 162 to fill at least a portion of the one or more ohmic contact regions 151. The optical, electrical, or both of the electromagnetic radiation or light from or into the conversion portion 14 can be varied by adjusting the pattern of the fill 162 distribution in the ohmic contact region 151. The filling material 162 is at least one of an insulating material, a metal, a semiconductor, a doped semiconductor, and a wavelength converting substance. The insulating material is such as an oxide, an inert gas, air or the like. The wavelength converting substance is a phosphor, a phosphor, a dye, a semiconductor, or the like. The refractive index of the filler 162 can also be between the upper and lower materials. If the filler 162 is a particle, it should preferably be sized to fill the ohmic contact region 151 or less than the width, depth, or both of the ohmic contact region 151. In the figure 7(a), the ohmic contact region 151 which is in contact with the contact layer 16 under the electrical contact 17 is filled with the filling material 162. In the figure 7(b), the portion of the ohmic contact region 151 which is in contact with the contact layer 16 under the electrical contact 17 is also filled with the filling material 162, but the other portions of the ohmic contact region 151 are not filled with the filling material 162. presence. As shown, the outer edge portion of the contact layer 16 extends into the ohmic contact region 151. In the seventh (c) diagram, the discontinuous region 161 (at the dotted line) contains the same material as the contact layer 16, but further contains the filler 162.

As shown in FIG. 8, at least a portion of the electrical contacts 17 are buried in the second electrical layer 15. In (a), an ohmic contact region 151, a regular surface structure (not shown), an irregular surface structure (not shown), or a combination thereof may be selectively formed under the discontinuous region 161. In the (b) diagram, the ohmic contact region 151 is not present under the discontinuous region 161. If the ohmic contact region 151 is formed on the second electrical layer 15 by epitaxial growth, the filling material 162 may be filled in the ohmic contact region 151 in the discontinuous region 161 to be flattened (not shown). If the ohmic contact region 151 is formed on the second electrical layer 15 by wet etching, dry etching, or a combination thereof, an etching mask may be used to cover a portion of the discontinuous region 161 that is expected to be formed to avoid the second portion. The surface of the electrical layer 15 is etched. In (c), any surface of the electrical contact 17 that is in contact with the contact layer 16, the second electrical layer 15, or both is formed as a regular surface structure, an irregular surface structure, or two thereof. The combination is to increase the contact area between the electrical contacts 17 and other parts.

As shown in FIG. 9, at least a portion of the electrical contact 17 is buried in the second electrical layer 15, and the ohmic contact region 151 is not present under the discontinuous region 161. In one embodiment, the contact layer 16 first covers the upper surface of the second electrical layer 15 on which the ohmic contact region 151 is formed, and then removes a portion of the contact layer 16 according to a predetermined pattern until the ohms in the regions. The contact area 151 is almost removed. Thus, the formation of the discontinuous region 161 and the removal of the ohmic contact region 151 are combined in the same series of process steps. In another embodiment, as shown in (b), a regular surface structure, an irregular surface structure, or a combination of both may be formed on any of the inner surfaces of the discontinuous regions 161. The electrical contact 17 is formed on either surface of the contact layer 16, the second electrical layer 15, or both to form a regular surface structure, an irregular surface structure, or both to increase the electrical contact. 17 contact area with other parts.

As shown in FIG. 10, the ohmic contact regions 151 are formed on the second electrical layer 15 in different sizes, and the type of the ohmic contact regions 151 can be referred to the foregoing description. Under certain conditions, the condition of the inner or outer surface of the ohmic contact region 151 determines the quality and quantity of ohmic contact between the contact layer 16 and the second electrical layer 15. For example, a larger range of surfaces can provide more area to form an ohmic contact. (a) In the figure, the width and depth of the ohmic contact region 151 are gradually enlarged outward from the electrical contact 17. (b) In the figure, the ohmic contact area 151 under the electrical contact 17 and the specific position is filled with the filling material 162. For the matters related to the filling quality 162, refer to the foregoing description and drawings. (c) In the figure, the ohmic contact region 151 is not formed under the electrical contact 17. Here, "size" includes, but is not limited to, length, width, depth, height, thickness, radius, angle, curvature, pitch, area, volume.

The above figures are merely illustrative of various embodiments and are not intended to limit the location, number, or configuration of surface structures. "Regular surface structure" means a structure that recognizes a repeating feature in either direction of a surface, and the pattern of such repeating features may be a fixed period, a variable period, a quasiperodicity, or a combination thereof. "Irregular surface structure" means a structure that does not recognize a repeating feature in either direction of a surface, and this structure may be referred to as a "random rough surface."

11 and 12 are views showing a top view of a partial region of the optoelectronic semiconductor device. In Fig. 11, the pattern of discontinuous regions 161 is circular and may be arranged as a conventional array of (a) or as a staggered array of (b). Symbol P1 denotes a circular distance, and symbol D1 denotes a circular diameter. In Fig. 12, the pattern of discontinuous regions 161 is square and may be arranged as a conventional array of (a) or as a staggered array of (b). Symbol P2 represents the distance between squares, and symbol D2 represents the length of the sides of the square. However, the shape of the discontinuous region 161 is not limited thereto, and other shapes such as a rectangle, a diamond, a parallelogram, an ellipse, a triangle, a pentagon, a hexagon, a trapezoid, or an irregular shape may also be adopted for the present invention.

Table 1 summarizes the results of the experimental results. The experiment system uses 45 mil × 45 mil blue crystal grains produced by Taiwan Jingyuan Optoelectronics Co., Ltd., and its structure is similar to that of the photoelectric semiconductor device 10 of Fig. 3, which is processed and formed into a pattern as shown in Fig. 11(a) and 11(b). The discontinuous regions and contact layers of Fig. 12 and Fig. 12(a) are circular conventional arrays, circular staggered arrays, and square conventional arrays. The material of the contact layer 16 is electron beam evaporated indium tin oxide having a particle size of about 50 nm to 80 nm and a refractive index of about 2. The units of D1, D2, P1, and P2 are um. Vf is the forward voltage. The area ratio is the percentage of the total area of the discontinuous area and the area of the contact layer. As shown in Table 1, when we can find that the brightness is increased and the Vf is lowered, the area of the discontinuous area must be appropriately controlled. In addition, the density of the discontinuous regions in the contact layer is also a control parameter. A method for calculating the current dispersion distance (Ls) between two electrodes of a light-emitting diode has been provided in a paper by X. Guo et al., Applied Physics Letters, Vol. 78, No. 21, p. 3337. And cited as part of this application. Taking the estimation of the above literature as a hypothesis, if the size of the discontinuous region falls within the scale of the current dispersion distance, the current can flow into the contact layer by flowing through the second electrical region across a discontinuous region. Thereby, the current can travel a greater distance in the contact layer.

In still other embodiments of the present invention, the top view of the optoelectronic semiconductor device 10 or the contact layer 16 is as shown in Figs. 13 to 18, respectively. Reference numeral 153 denotes a platform. The drawings, the quantities, and the ratios in the drawings are merely illustrative and are not intended to limit the embodiments of the present invention, and other criteria, principles, principles, guidelines, or other teachings described herein may be reasonably applied to the present invention. in.

In Fig. 13, the second electrical contact 17 includes a root portion 171, a branch portion 172, and an end portion 173 which together form a current network for directing current in a predetermined direction. The root portion 171 is the origin of the branch portion 172 and the end portion 173, and is usually a prominent point on the outer shape, and can be used as a reference point in the process or the detection process, and is often used as a connection with an external circuit. The end 173 is the end portion of the network, i.e., there are no more branches. The branch 172 is interposed between the root 171 and the end 173. The two parts are electrically connected to each other or selectively physically connected to each other. For example, any two portions may be electrically connected to each other by external wires, contact layers 16, discontinuous regions 161, intermediate materials, or lower regions, wherein "intermediate material" refers to materials formed in adjacent two gaps. The intermediate material is either formed of at least one different material or formed in other process steps; the lower area refers to an electrical layer or an electrical region which can be used as a current path under any of the three portions. For example, the second electrical layer 15 or a highly doped region.

In an embodiment, the second electrical contact 17 may only include the root portion 171 and the end portion 173. In other embodiments, each of the root portion 171, the branch portion 172, and the end portion 173 may be connected to the underlying material in the same or different manners. The manner of connection may be described with reference to the foregoing embodiments and drawings. In addition, a current blocking region may be selectively formed under each portion to cause an obstacle to current flow to the underlying material, or to adjust a form in which the current flows downward. The current blocking region achieves the above effects by forming an insulating or poor conductive material under the target portion. In the drawings, the number, shape, and layout of the root portion 171, the branch portion 172, and the end portion 173 are merely illustrative and are not intended to limit the present invention. For example, the second electrical contact 17 can include two or more roots 171, and the roots 171 can selectively form a branch 172, an end 173, or both. One or more of the roots 171 may surround two or more of the branches 172 or 173. Two or more ends 173 can be branched from one branch 172.

The discontinuous regions 161 are formed inwardly from the outer boundary 163 of the contact layer 16, and such discontinuous regions 161 do not traverse the contact layer 16, i.e., each discontinuous region 161 has only one opening 164 on the outer boundary 163. And two or more discontinuous regions 161 may share an opening 164 as indicated by the dashed area. Viewed from the top view, the discontinuous region 161 can intersect (not shown) or disjoint with the second electrical contact 17. When the discontinuous region 161 intersecting the second electrical contact 17 is made of an insulating or poorly conductive material, the intersecting discontinuous region 161 can be integrated with the aforementioned current blocking region 165, as shown in Figure 14 (hatch) ) as shown. The position and size of the current blocking region 165 in the drawings are merely exemplary and are not intended to limit the implementation of the present invention.

In one embodiment, at least one of the angle, length, width, depth, and spacing of at least three consecutive discontinuous regions 161 in any or a portion of the outer boundary 163 is different. As shown in Fig. 13, the discontinuous regions 1611, 1612, and 1613 have the same angle, length, and width, but the pitches are not the same, in other words, the discontinuous region 161 in this region is not considered under the depth. The configuration system presents an irregular change in one dimension. This irregular change includes a partial or total irregular change, for example, an irregular change zone located between two rule change zones. "Regular change" refers to a change in equivalence or an increase in equivalence. As another example, the discontinuous regions 1614, 1615, and 1616 have different angles, lengths, widths, and spacings.

In the 13th and 14th figures, the second electrical contact 17 is bilateral symmetry. In Fig. 15, the second electrical contact 17 is asymmetry. The first electrical contacts 18 in FIGS. 13 to 15 are bilaterally symmetrical, but are not limited thereto. In other words, the first electrical contacts 18 may also be asymmetric. In an embodiment, the overall variation trend of the discontinuous regions conforms to the second electrical contact 17 appearance, but does not exclude that a few discontinuous regions 161 may deviate from the changing trend. For example, there may still be a shorter length between the two longer discontinuous regions 161 surrounding the root portion 171 or the end portion 173. In another embodiment, the interval between the at least partially discontinuous region 161 and the second electrical contact 17 is maintained within a fixed or stable interval, for example, each discontinuous region 161 arranged on both sides of the branch portion 172 and The distance between the branches 172 is substantially the same, that is, the spacing is within a reasonable tolerance of the process.

The top view of the optoelectronic semiconductor device 10 shown in FIG. 16 reveals a first electrical contact 18a, a first electrical contact 18b, and a second electrical contact 17. The first electrical contacts 18a and 18b are formed on the platform 153 and respectively include a portion 181 and two end portions 183, and each of the root portions 181 is adjacent to a corner of the platform 153. The second electrical contact 17 is formed on the contact layer 16 and includes two root portions 171 adjacent to each other and a plurality of end portions 173, wherein the two end portions 173 are directly connected to the root portion 171; The portion 173 is individually connected to the three branches 172. The first electrical contacts 18a and 18b are physically separated and respectively coupled to the second electrical contacts 17. Specifically, each end portion 183 of the first electrical contacts 18a and 18b is formed on the platform 153 and extends toward the root portion 171 of the second electrical contact 17 and is interposed between the second electrical contacts 17 The branch portion 172 - the end portion 173, the branch portion 172 - the branch portion 172, or the end portion 173 - the end portion 173. However, the quantities in the figures are merely illustrative and are not intended to limit the invention.

The physical separation of the first electrical contacts 18a and 18b makes the configuration of the electrical contacts more flexible. For example, the first electrical contacts 18a and 18b can be disposed on different levels of the platform 153, and the first electrical contacts 18a and 18b can be disposed in different seating directions and between the two electrical contacts. The connecting branch 172, the end 173, or both. If at least one of the root portion 171, the branch portion 172, and the end portion 173 is used to shield or deplete material entering or leaving the optical energy of the optoelectronic semiconductor device 10, reducing the use of such a material should improve the operational efficiency of the optoelectronic semiconductor device 10. In addition, although the first electrical contacts 18a and 18b in the figure interact with the second electrical contact 17 in a current path in the form of bilateral symmetry, the present invention does not Limited. The first electrical contacts 18a and 18b may also be formed in a form of radial symmetry or asymmetry.

The whole or partial pattern of the first electrical contact 18 and the second electrical contact 17 is artificially fabricated, or is a natural creature or phenomenon, such as: a plant vein, an insect wing vein, or the like, or a mathematical function. Such as: fractal (fractal). The first electrical contacts 18a and 18b in the figure only include the end portion 183, respectively, but the invention is not limited thereto, that is, at least one of the first electrical contacts 18a and 18b may also include Branch (not shown). In an embodiment, when the adjacent two portions of different electrical contacts are separated by a large distance or area, the uniformity of current dispersion can be improved by reasonably increasing the number of branches, ends, or both. However, if the current network formed by the electrical contacts is excessively dense, the light energy that efficiently enters and exits the optoelectronic semiconductor device 10 may be reduced.

Each branch or end may radiate outwardly from the root at equal intervals, non-equal spacing, isometric, or non-equal angle. The ends may radiate outward from the branch at equal intervals, non-equal spacing, or staggered patterns. The geometric profile of each branch and end can be a straight line, a curve, or a combination thereof. The type of the curve includes at least one of a hyperbola, a parabola, an elliptical line, a circular line, a power series curve, and a spiral.

As shown in FIG. 16, the number of all the ends 183 of the first electrical contacts 18a and 18b is less than the end 173 of the second electrical contact 17 (directly connected to the root 171) and the branch 172 (between the roots) The sum of 171 and the end 173), however, the invention is not limited thereto. In other words, the number of main interdigitated portions of the first electrical contacts 18a and 18b may be greater than or equal to the number of main interdigitated portions of the second electrical contacts 17. Moreover, the number of main interdigitated portions of the first electrical contact 18a may also be greater than, equal to, or less than the number of main interdigitated portions of the first electrical contact 18b.

The height, width, or both of the roots, branches, and ends can be set to a fixed value, a gradual change, or a random. For example, the root, the branch, and the end are the same, the root is the widest, the branch is the second, and the end is the thinnest. Furthermore, the dimensions of the first electrical contacts 18a, 18b and the second electrical contacts 17 may be the same, different, or partially identical. In one embodiment, the electrical contacts as shown in FIG. 16 are formed on a 45 mil x 45 mil or larger illuminating diode die, wherein the height of the root, the branch, and the end are both 2 μm, the width of the branch portion 172 and the end portion 173 of the second electrical contact 17 are 9 μm and 7 μm, respectively, and the width of the end portions of the first electrical contacts 18a and 18b is 9 μm.

In the figure, a current blocking region 165 (dashed line) is formed under the second electrical contact 17 to cause an obstacle to current flow to the underlying material, or to adjust the form of current flow. The current blocking region 165 achieves the above effects by forming an insulating or poor conductive material under the target portion (such as the second electrical contact 17 in FIG. 16). The size of the current blocking region 165 is preferably slightly larger than the upper electrical contact, but the invention is not limited thereto. However, the improperly sized current barrier region 165 may excessively increase the operating voltage of the optoelectronic semiconductor device 10. For example, the current blocking region 165 of the 45 mil x 45 mil light emitting diode described in the previous paragraph is reduced from 7 μm to 5 μm from the second electrical contact 17, and its forward voltage can be decreased by 0.02 volt. In addition, the current blocking region 165 can be selectively formed in any single layer, multiple layers, or discontinuous layers below the electrical contacts. If the current blocking region 165 is formed in a plurality of layers, the pattern and size of the current blocking region 165 in each layer are not necessarily the same.

As shown in FIG. 17, an optoelectronic semiconductor device 10 according to another embodiment of the present invention includes first electrical contacts 18a and 18b and a second electrical contact 17. The first electrical contacts 18a and 18b respectively include a single portion 181 and two end portions 183. The second electrical contact 17 includes two root portions 171 adjacent to each other, six branch portions 172, and a plurality of end portions 173 extending outward from the respective branch portions 172, respectively. In detail, the branch 172 includes a trunk 174, a first end 175, and a second end 176. The first end 175 is coupled to the root 171. The second end 176 is selectively an open end. End 173 is coupled to backbone 174. The two branches 172 located at the middle of the figure are visually connected to a partial area. In addition, the explanation of each part can be referred to the description of Fig. 16.

As shown in FIG. 18, an optoelectronic semiconductor device 10 according to still another embodiment of the present invention includes first electrical contacts 18a and 18b and a second electrical contact 17. The first electrical contacts 18a and 18b are formed on the platform 153 and respectively include a portion 181 and two end portions 183, and each of the root portions 181 is away from a corner of the platform 153. The second electrical contact 17 is formed on the contact layer 16 and includes two root portions 171 and six branches 172 adjacent to each other. The two branches 172 located at the middle of the figure are visually connected to a partial area. The layer 16 is contacted and forms a discontinuous region 161 of discrete random distribution. For other embodiments of the discontinuous area 161, please refer to the foregoing description. In addition, the explanation of each part can be referred to the description of Fig. 16.

The above figures and descriptions are only corresponding to specific embodiments, however, the elements, embodiments, design criteria, and technical principles described or disclosed in the various embodiments are inconsistent, contradictory, or difficult to implement together. In addition, we may use any reference, exchange, collocation, coordination, or merger as required.

Although the invention has been described above, it is not intended to limit the scope of the invention, the order of implementation, or the materials and process methods used. Various modifications and variations of the present invention are possible without departing from the spirit and scope of the invention.

10. . . Photoelectric semiconductor device

11. . . Substrate

12. . . Transition layer

13. . . First electrical layer

14. . . Conversion department

15. . . Second electrical layer

151. . . Ohmic contact zone

152. . . Insulating area

153. . . platform

16. . . Contact layer

161. . . Discontinuous zone

1611. . . Discontinuous zone

1612. . . Discontinuous zone

1613. . . Discontinuous zone

1614. . . Discontinuous zone

1615. . . Discontinuous zone

1616. . . Discontinuous zone

162. . . Filler

163. . . Outer boundary

164. . . Opening

165. . . Current blocking zone

17. . . Second electrical contact

171. . . Root

172. . . Branch

173. . . Ends

18. . . First electrical contact

18a. . . First electrical contact

18b. . . First electrical contact

181. . . Root

182. . . Branch

183. . . Ends

100. . . Light-emitting element

110. . . Sapphire substrate

120. . . Nitride buffer layer

130. . . N-type nitride semiconductor stack

140. . . Nitride multiple quantum luminescent layer

150. . . P-type nitride semiconductor stack

1501. . . Hexagonal cone cavity structure

160. . . Oxide transparent conductive layer

1601. . . ITO particles

Fig. 1 is a view showing a high luminous efficiency light-emitting element disclosed in Japanese Patent No. I237903 of the present applicant;

Figure 2 is a photograph showing the ITO particles formed by electron beam evaporation in a six-hole cone cavity under a scanning electron microscope (SEM);

3 is a schematic view showing an optoelectronic semiconductor device according to an embodiment of the present invention;

4 is a schematic view showing an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 5 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 6 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 7 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 8 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 9 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 10 is a view showing a part of the structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

Figure 11 is a top plan view showing a portion of a structure of an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 12 is a top plan view showing a portion of a structure of an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 13 is a top plan view showing a contact layer of an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 14 is a top plan view showing a contact layer of an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 15 is a top plan view showing a contact layer of an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 16 is a top plan view showing an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 17 is a top plan view showing an optoelectronic semiconductor device in accordance with an embodiment of the present invention;

Figure 18 is a top plan view showing an optoelectronic semiconductor device in accordance with an embodiment of the present invention.

15. . . Second electrical layer

153. . . platform

16. . . Contact layer

161. . . Discontinuous zone

1611. . . Discontinuous zone

1612. . . Discontinuous zone

1613. . . Discontinuous zone

1614. . . Discontinuous zone

1615. . . Discontinuous zone

1616. . . Discontinuous zone

163. . . Outer boundary

164. . . Opening

17. . . Second electrical contact

171. . . Root

172. . . Branch

173. . . Ends

18. . . First electrical contact

Claims (28)

An optoelectronic semiconductor device comprising: a conversion portion including a first side; an electrical contact electrically connected to the conversion portion; a contact layer in contact with the electrical contact, having an outer boundary; and at least Three consecutive discontinuous regions originating from the outer boundary and having at least one different element, wherein the electrical contact, the contact layer, and the discontinuous region are formed in the first portion of the conversion portion side. The optoelectronic semiconductor device of claim 1, wherein the element comprises one of an angle, a length, a width, a depth, and a pitch. The optoelectronic semiconductor device of claim 1, wherein the electrical contact comprises a portion, a portion, and an end portion. The optoelectronic semiconductor device of claim 1, wherein the electrical contact comprises an area for connection to an external circuit. The optoelectronic semiconductor device of claim 1, wherein the electrical contact and the discontinuous region have at least one intersection in a projection direction. The optoelectronic semiconductor device of claim 1, further comprising: a current blocking region located at least below the discontinuous region. The optoelectronic semiconductor device of claim 1, wherein each of the discontinuous regions has only one opening on the outer boundary. The optoelectronic semiconductor device of claim 1, wherein the discontinuous region comprises at least one current blocking region. An optoelectronic semiconductor device comprising: a conversion portion; a first electrical contact electrically connected to the conversion portion; and a second electrical contact forming a current path with the first electrical contact end; A contact layer is in contact with the second electrical contact and has an outer boundary; and a plurality of discontinuous regions are derived from the outer boundary and substantially conform to the second electrical contact profile. The optoelectronic semiconductor device of claim 9, wherein the distance between each of the discontinuous regions and the nearest nearest electrical contact is substantially the same. The optoelectronic semiconductor device of claim 9, wherein the first electrical contact and the second electrical contact are respectively located on opposite sides of the conversion portion. The optoelectronic semiconductor device of claim 9, further comprising: an ohmic contact region located under the contact layer, the discontinuous region, or both. The optoelectronic semiconductor device of claim 9, wherein at least one of the discontinuous regions deviates from an overall trend. The optoelectronic semiconductor device of claim 9, wherein at least one of the first electrical contact and the second electrical contact is bilaterally symmetric. The optoelectronic semiconductor device of claim 9, wherein at least two of the discontinuous regions have a common opening on the outer boundary. An optoelectronic semiconductor device comprising: a conversion portion including a first side; an electrical contact on the first side of the conversion portion, electrically connected to the conversion portion; a contact layer and the electrical contact Contacting, having an outer boundary; and a plurality of discontinuous regions originating from the outer boundary, the outer boundary being toward the electrical contact and exhibiting an irregular change in one dimension. The optoelectronic semiconductor device of claim 16, wherein the contact layer and the discontinuous region are between the electrical contact and the conversion portion. The optoelectronic semiconductor device of claim 16, wherein the discontinuous region comprises discontinuities of at least one of geometry, material, physical properties, and chemical properties. The optoelectronic semiconductor device of claim 16, further comprising: an ohmic contact region, located in the contact layer, the discontinuous region, or both of them, And comprising a raised space, a recessed space, or both, the geometric shape of the space comprising at least one of a pyramid, a cone, and a flat head. An optoelectronic semiconductor device comprising: a substrate having an area greater than or equal to 45 mils by 45 mils; a first electrical contact comprising: a first root portion electrically connected to two or more ends; and a first a second portion separated from the first root and electrically connected to two or more ends; a second electrical contact comprising at least two roots and a plurality of ends; and a conversion portion Between the substrate and the second electrical contact; wherein any one of the plurality of ends of the second electrical contact exists between any two adjacent ends of the first electrical contact. The optoelectronic semiconductor device of claim 20, wherein the two root portions of the second electrical contact are connected to each other. The optoelectronic semiconductor device of claim 20, wherein at least one of the two root portions of the second electrical contact is electrically connected to at least one of the plurality of ends by at least one portion. The optoelectronic semiconductor device of claim 20, wherein the second electrical contact further comprises: a portion having a first end, a second end, and a trunk, the first end being connected to the second At least one of the roots, the backbone being connected to at least one of the plurality of ends. The optoelectronic semiconductor device of claim 20, further comprising: a current blocking region located below the second electrical contact. The optoelectronic semiconductor device of claim 20, further comprising: a platform, the first electrical contact being formed on the platform. The optoelectronic semiconductor device of claim 20, further comprising: A contact layer is interposed between the second electrical contact and the conversion portion and includes a discontinuous region. A current channel is provided for passing a current through a conversion portion, comprising: a first electrical contact, comprising: a first root portion electrically connected to two or more end portions; and a second root portion The first portion is separated and electrically connected to the two or more ends; and the second electrical contact includes at least two roots and a plurality of ends, wherein any two of the first electrical contacts Between the adjacent ends, at least one of the plurality of ends of the second electrical contact; wherein the converting portion includes a first surface and a second surface, the first surface is electrically connected to the The first electrical contact is electrically connected to the second electrical contact. The current channel of claim 27, wherein the two roots of the second electrical contact are connected to each other.