TWI389356B - Light emitting diode with a thermal sensor and manufacturing method thereof - Google Patents

Description

Light-emitting diode chip with temperature sensing element and preparation method thereof

The invention relates to a light-emitting diode chip with a temperature sensing element and a manufacturing method thereof, in particular to a light-emitting diode chip in which a temperature sensing element is integrated in a light-emitting diode and a manufacturing method thereof.

As semiconductor process technology capabilities continue to rise, semiconductor wafers are becoming more powerful, and electronic components are becoming smaller and smaller, and heat per unit volume is rapidly increasing. In order to avoid component failure due to heat accumulation, it is necessary to understand the heat dissipation of electronic components. Capability, so the temperature-sensitive parameter principle is usually applied to correct the voltage drop associated with the measurement and then converted to the actual thermal resistance of the component to evaluate its ability to dissipate heat.

For example, in the industry of light-emitting diodes (LEDs), thermal resistance is defined as the ratio of the temperature difference along the heat conduction path to the power consumed on the channel under thermal equilibrium conditions, and the thermal resistance is used to indicate the light to be measured. The heat dissipation capability of the polar body. Traditionally, an external tool is used to indirectly estimate the above temperature difference. The steps are as follows: (A) The relationship between the forward voltage corresponding to the current and the slope of the diode interface temperature, commonly referred to as the K factor. (B) Applying the initial current and the steady current to the diode in stages, and measuring the voltage difference therein, and then indirectly obtaining the diode through the K-factor and the voltage difference obtained in the step (A). The temperature difference between the initial current and the steady current. Performing the above steps to obtain the temperature difference has the following disadvantages:

(1) The temperature difference is not measured by real measurement, but is estimated by multiple steps of calculation and conversion. Therefore, the reliability and reliability of the value cannot be evaluated; and the above method cannot measure the light emission in real time. The interface temperature of the polar body.

(2) Since the above steps require different currents to be applied to the light-emitting diodes, the current measurement is affected by the measurement speed of the machine, that is, the machine with different measurement speeds causes reading values. difference.

(3) The voltage will be in the process of conversion due to the difference of external circuits, such as the design of series and parallel circuits.

(4) Since the light-emitting diodes can be roughly classified into large currents and small currents, the selection of the above initial currents also causes errors in measurement results of different types of light-emitting diodes.

In addition to the above methods, there is a literature in which a light-emitting diode is integrated with an external temperature-sensing element into a package of a light-emitting diode. For example, US Patent Publication No. US 2006/0239314 discloses a light-emitting diode unit, which includes both There are two independent components: a light-emitting diode element and a temperature-sensing element. This technology uses a bonding material with good thermal conductivity to bond the two together, but the temperature of the light-emitting diode interface is not measured by this method. Quite accurate, because the temperature sensing element is a separate component, there is also a considerable distance between the temperature sensing element and the PN interface of the LED component, or the bonding material may be due to differences in process conditions or the material itself. The characteristics cause a change in the heat conduction path, and all of the above factors cause the measurement result to be not the true PN interface temperature.

In addition, there are also conventional techniques for measuring the temperature of a light-emitting diode by means of infrared measurement. However, this method is only applicable to a light-emitting diode before being packaged, and thus it is not suitable for a general production application.

The reason is that the inventors have felt that the above-mentioned deficiency can be improved, and proposes a present invention which is rational in design and effective in improving the above-mentioned deficiency.

The main object of the present invention is to provide a light-emitting diode chip with a temperature sensing element and a manufacturing method thereof. The structure of the light-emitting diode chip has a temperature sensing component, so the temperature sensing component can be relatively correct. The actual temperature of the light-emitting diode (ie, the interface temperature of the semiconductor stacked light-emitting structure) is sensed, and at the same time, the temperature can be monitored.

In order to achieve the above object, the present invention provides a light emitting diode chip having a temperature sensing element, comprising: a substrate; a temperature sensing element formed on the substrate; and an insulating layer covering the temperature A sensing element, and a semiconductor stacked light emitting structure, are formed over the substrate and the temperature sensing element. In a preferred embodiment, the LED chip further has an insulating layer disposed between the substrate and the semiconductor stacked light emitting structure, the insulating layer having a flat surface to facilitate the semiconductor stacked light emitting structure. Production.

The invention also provides a method for manufacturing a light-emitting diode chip with a temperature sensing element, comprising the steps of: (a) providing a substrate; (b) fabricating a temperature sensing element on the upper surface of the substrate; and (c) A semiconductor stacked light emitting structure is fabricated over the temperature sensing element.

The invention has the following beneficial effects: the manufacturing method proposed by the invention integrates the fabrication of the temperature sensing element with the fabrication of the light emitting diode, so that the inside of the produced light emitting diode is "built in" with the temperature sensing element. So that the user can instantly and accurately measure the temperature of the light-emitting diode, and the above temperature data can be directly used to calculate the thermal resistance, without having to go through multiple layers of numerical calculations, so the light-emitting diode produced by the manufacturing method can Provides better temperature sensing results and provides a more efficient benchmark for thermal resistance calculations.

For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

Referring to the first to fourth figures, the present invention provides a light-emitting diode wafer 1 having a temperature sensing element, wherein the light-emitting diode wafer 1 is characterized in that a temperature sensing unit is added to the wafer structure. The light-emitting diode chip 1 can perform the measurement and detection of the light-emitting temperature itself, without external temperature sensing device, and further solves the problem that the external temperature sensing device cannot measure the temperature of the light-emitting diode instantaneously and accurately. The problem.

2 and 3 are schematic views of a first embodiment of the present invention, showing a horizontal form of a light-emitting diode wafer 1 including a substrate 10 and a temperature sensing element. 12 and a semiconductor stacked light emitting structure 14. The substrate 10 is mainly a light-emitting diode substrate, which may be a non-conductive substrate.

A temperature sensing component 12 is formed on the substrate 10, and the temperature sensing component 12 is a main feature of the present invention, that is, the invention directly fabricates the temperature sensing component 12 by epitaxial or other semiconductor processing methods. Above the substrate 10, a semiconductor stacked light-emitting structure 14 is subsequently fabricated, such as an epitaxial method: heating the vapor-deposited material to evaporate molecules to reach the substrate in an ultra-high vacuum environment for epitaxial growth at an extremely high thermal rate. The semiconductor stacked light-emitting structure 14 is formed by precisely controlling the composition, thickness, number of layers, and the like of the nano-scale heterostructure, so that the finally formed light-emitting diode wafer 1 includes the above-described temperature sensing element 12. The semiconductor stacked light emitting structure 14 includes an n-type semiconductor layer 141 and a p-type semiconductor layer 143, and a semiconductor active layer 145 disposed between the n-type semiconductor layer 141 and the p-type semiconductor layer 143; Above the semiconductor layer 141, there is further provided an n-type layer electrode 142, and the p-type semiconductor layer 143 has a p-type layer electrode 144. However, the present invention is not limited thereto, and at least one temperature sensing element 12 may be disposed on one side of the semiconductor stacked light emitting structure 14. In a specific embodiment to be described later, the temperature sensing element 12 is directly formed by epitaxy, and the substrate 10 and the semiconductor stacked light emitting structure 14 are integrated together. On the one hand, the actual operation of the semiconductor stacked light emitting structure 14 can be directly measured. Temperature, on the other hand, the temperature sensing component 12 can be combined with other external detection modules to make the operation of measuring the junction temperature of the LEDs more accurate and instantaneous. The two ends of the temperature sensing element 12 are formed with two ends of the electrode 121. The temperature sensing element 12 and the two end electrodes 121 have a lead 122. The two end electrodes 121 mainly output a temperature sensing signal. In order to allow the user to instantly and accurately detect the actual temperature of the LED chip 1. The temperature sensing element 12 can be serpentine or matrix-formed, thereby increasing the sensitivity of temperature sensing, as shown in FIG.

On the other hand, the semiconductor stacked light-emitting structure 14 is the main light-emitting area in the element, that is, after the voltage is excited, the semiconductor stacked light-emitting structure 14 can emit light. The temperature sensing element 12 can measure the temperature of the PN interface of the semiconductor stacked light emitting structure, that is, the actual temperature of the light emitting diode chip 1, at a position relatively close to the PN interface. The semiconductor stacked light-emitting structure 14 also includes a positive electrode and a negative electrode (ie, an n-type layer electrode 142 and a p-type layer electrode 144). The positive and negative electrodes are connected to an external power source to drive the light-emitting diode wafer 1 by applying a voltage. .

However, in order to reduce the epitaxial defects between the semiconductor stacked light-emitting structure 14 and the temperature sensing element 12, the light-emitting diode wafer 1 further includes a film formed between the substrate 10 and the semiconductor stacked light-emitting structure 14. The insulating layer 13 is disposed on the temperature sensing element 12, and the insulating layer 13 has a flat upper surface to form a preferred lattice-matched semiconductor stacked light-emitting structure 14, which also makes the whole The light-emitting diode wafer 1 forms a structurally strong element. The composition of the insulating layer 13 can be adjusted according to different diode applications. For example, the insulating layer 13 can be an insulating layer formed of zirconium nitride (ZrN) or/and aluminum nitride (AlN), and utilizes The filling of the insulating layer 13 serves to form a flat upper surface, thereby providing the semiconductor stacked light-emitting structure 14 over the insulating layer 13 with better characteristics.

The step of fabricating the above-described light-emitting diode wafer 1 will be described below.

Step (a) provides a substrate 10, exemplified by a sapphire substrate. The substrate 10 may further comprise a buffer material layer to facilitate stacking of the upper materials.

Step (b) is to form a temperature sensing element 12 on the substrate 10. It should be noted that if the substrate 10 itself is of a conductive type, an auxiliary insulating layer must be formed on the substrate 10 to prevent the temperature sensing element 12 from being electrically connected to the substrate 10.

In the embodiment, the temperature sensing element 12 is a resistance temperature detector (RTD), which is mainly a metal film, and the temperature measurement is achieved by using the resistance value of the metal film to change with temperature. Therefore, the following will be explained in the production process of the resistance thermometer. First, an aluminum nitride (AlN) layer is formed on the substrate 10, and then a chromium (Cr) layer or a nickel layer (Ni) and a gold (Au) layer are formed on the aluminum nitride layer by evaporation. And then performing a yellow light step; then performing an etching step of a chromium layer or a nickel layer (Ni) and a gold layer; finally depositing an aluminum nitride layer to coat the chromium layer or the nickel layer (Ni) and the gold layer, Forming a typical resistance thermometer layer; forming a pattern with a specific pattern on the surface of the substrate 10 and a two-terminal electrode 121 (a conductive pad) electrically connected to the external line by using a technique such as yellow lithography or etching, thereby forming the The temperature sensing element 12 causes the temperature sensing element 12 to form two end electrodes 121 on both sides of the temperature sensing element 12. In this embodiment, a gold (Au) layer or a nickel layer (Ni) is deposited to a thickness of about 0.2 μm, and the metal film is patterned to form the temperature sensing element 12, that is, by using a patterning layer. a step of forming a serpentine or matrix form wiring on the metal film to form the temperature sensing element 12, such that the temperature sensing element 12 can be wired in a matrix or a snake array, and the temperature sensing element 12 is wired. The line width must be much smaller than the line width of the leads 122 to improve the accuracy of the sensing element. The above description of the process of the temperature sensing element 12 is for illustrative purposes only and is not intended to limit the invention.

In step (c), an insulating layer 13 is formed on top of the temperature sensing element 12. The main purpose of this step is to separate the electrical relationship between the temperature sensing element 12 and the subsequent semiconductor stacked light-emitting structure 14 by using the insulating layer 13, that is, to avoid electrical interaction between the two, and by the insulation. The layer 13 fills in the height difference formed by the temperature sensing element 12 and fills the pores in the structure to form a flat surface, so that the epitaxial operation of the subsequent semiconductor stacked light-emitting structure 14 can be smoothly performed. In the present embodiment, a 0.35 μm thick aluminum nitride (AlN) layer is used as the insulating layer 13 described above, and the width of the insulating layer 13 is slightly smaller than the width of the temperature sensing element 12 to make the temperature The electrodes 121 at both ends of the sensing element 12 are exposed so that the temperature sensing signal can be transmitted to the reading module other than the LED chip 1. In a specific embodiment, a mask may be masked on the two end electrodes 121 of the temperature sensing element 12 before the step of forming the insulating layer 13, so that the insulating layer 13 is formed. After the step, the two ends 121 of the temperature sensing element 12 can be exposed to form an end point electrically connected to the outside. Alternatively, after the step of forming the insulating layer, a two-electrode electrode 121 electrically connected to the external temperature sensing element 12 is defined by a lithography developing process.

Step (d) fabricating the semiconductor stacked light emitting structure 14. In this embodiment, the semiconductor stacked light-emitting structure 14 is formed on the flat surface of the insulating layer 13 in an epitaxial manner, including forming an n-type semiconductor layer 141, a p-type semiconductor layer 143, and an The semiconductor active layer 145 between the n-type semiconductor layer 141 and the p-type semiconductor layer 143 and an n-type layer electrode 142 and a p-type layer electrode 144, which can be driven by a voltage to emit light. In addition, before forming the n-type layer electrode 142 and the p-type layer electrode 144, a lithography process is further included, so that a part of the n-type semiconductor layer 141 and the temperature sensing element 12 are electrically connected to the outside. The terminal electrode 121 is exposed. The n-type layer electrode 142 and the p-type layer electrode 144 of the semiconductor stacked light-emitting structure 14 can be simultaneously formed on the two semiconductor layers in a subsequent process to form an electrical connection with an external power source. Further, the steps of fabricating the n-type semiconductor layer 141 and the p-type semiconductor layer 143 can be adjusted according to an actual process. Therefore, in this step, the LED chip 1 has been fabricated, and the wafer further has a temperature sensing component 12 that senses the temperature of the PN interface, and the temperature sensing component 12 is adjacent to the semiconductor stack. The structure 14 is such that the temperature measured by the temperature sensing element 12 can correspond to the temperature of the semiconductor stacked light-emitting structure 14 with no error, and the direct measurement method has better stability. On the other hand, the position of the temperature sensing element 12 is in a different plane from the semiconductor stacked light emitting structure 14 , and the temperature sensing element 12 is located below the semiconductor stacked light emitting structure 14 , so the temperature sensing element 12 is not The effective light-emitting area of the semiconductor stacked light-emitting structure 14 is affected, that is, the temperature sensing element 12 and the semiconductor stacked light-emitting structure are located on different planes, and the light-emitting area of the semiconductor stacked light-emitting structure 14 is not affected by the light-emitting area. influences.

After the above steps, the LED chip 1 is formed into a light-emitting diode element by a packaging process. For example, as shown in the fourth figure, the LED chip 1 is mounted on a light-emitting diode. The package structure 20 is coated with an encapsulating resin 22 for optical and protective functions. The n-type layer electrode 142 and the p-type layer electrode 144 of the semiconductor stacked light-emitting structure 14 are respectively connected by wires. a set of wires is connected to the external power source; in addition, the two ends of the temperature sensing element 12 also output temperature sensing signals by another set of wires (the second group of wires), so the semiconductor stacked light emitting structure and the temperature The wires of the sensing element 12 are independent of each other and do not interfere with each other. It should be noted that, in the fourth figure, the semiconductor stacked light-emitting structure 14 and the wires of the temperature sensing element 12 are both connected to the package structure 20 of the light-emitting diode, which is only for illustrative purposes; The connection position can be adjusted according to the positive and negative ends of the external power source and the terminal position of the receiving temperature signal module, so that the interface temperature of the semiconductor stacked light-emitting structure 14 can be measured while the light-emitting diode wafer 1 emits light.

Please refer to FIG. 5 and FIG. 6 , which are a second embodiment of the present invention, showing a vertical LED chip 1 , which is prepared as follows: a substrate 10 is provided; and a semiconductor stacked light-emitting structure 14 is fabricated. On the substrate 10, an n-type semiconductor layer 141, a semiconductor active layer 145, and a p-type semiconductor layer 143 are sequentially formed in the process; a temperature sensing element 12 and a first electrode are formed (ie, In one embodiment, the p-type layer electrode 144 is on the semiconductor stacked light-emitting structure 14, and the step is to electrically connect the first electrode to the p-type of the semiconductor stacked light-emitting structure 14 by means of growth or mounting. The semiconductor layer 143, and the temperature sensing element 12 is disposed in the first electrode. In addition, the method further includes the steps of: forming an auxiliary insulating layer 123 between the temperature sensing element 12 and the first electrode; further, after the forming the first electrode, further comprising the step of removing the substrate 10, And the structure after the substrate 10 is removed is reversed; then, a second electrode (ie, the n-type layer electrode 142 in the first embodiment) is fabricated on the semiconductor stacked light-emitting structure 14 and the removed substrate 10 The surface that is in contact (ie, the upper surface after the above structure is reversed).

In addition, referring to the description of the first embodiment, in the embodiment, the process of lithographic development or the like is also used to define the steps of the two ends of the temperature sensing element 12 electrically connected to the external electrodes 121, that is, using the patterning. a step of forming a serpentine or matrix form wiring on the metal film (such as the gold layer or the nickel layer described in the first embodiment) to construct the temperature sensing element 12; and forming an insulating layer 13 at the temperature The step between the measuring element 12 and the semiconductor stacked light emitting structure 14. On the other hand, the features and processes of the temperature sensing component 12 in this embodiment are the same as those in the first embodiment, and thus are not described herein again. After the above process, since the substrate 10 is removed and the structure is reversed, the vertical LED chip 1 of the present embodiment has the p-type layer electrode 144 as a carrier, so the fifth The conductive substrate 10' shown in the drawing is a p-type layer electrode 144 (a metal substrate in a conductive form), so that the vertical light-emitting diode wafer 1 has a conductive structure formed by the p-type layer electrode 144. The substrate 10' is disposed in the conductive substrate 10', and an auxiliary insulating layer 123 is disposed between the conductive substrate 10' and the temperature sensing element 12, and the semiconductor stacked light emitting structure 14 is An electrical connection is made on the conductive substrate 10', and an n-type layer electrode 142 is disposed on the semiconductor stacked light-emitting structure 14.

In addition, the vertical LED chip 1 may also include an insulating layer 13 between the temperature sensing element 12 and the semiconductor stacked light emitting structure 14. That is, the temperature sensing element 12 between the conductive substrate 10' and the semiconductor stacked light emitting structure 14 is surrounded by an insulating layer combination (the auxiliary insulating layer 123 and the insulating layer 13), and the semiconductor stacked light emitting structure 14 Electrical insulation. More specifically, the conductive substrate 10' surrounds the temperature sensing element 12 in combination with the insulating layer, and directly contacts the semiconductor stacked light emitting structure 14; in other words, the conductive substrate 10' and the auxiliary insulating layer 123 provide a flat surface. The semiconductor stacks between the light emitting structures 14; and the first electrode provides a flat upper surface for subsequent packaging processes.

Referring to the seventh and eighth figures, the LED body 1 of the present invention is applied to a package form of a flip-chip type, which is different from the first and second embodiments. The LED chip 1 is packaged in a flip chip manner, and the eighth figure shows that the LED chip 1 is inverted for packaging, and the n-type layer electrode 142 and the p-type layer electrode 144 are directly connected to the package structure. Corresponding conductive structures (or loops) on 20 are electrically connected, so that no connection by wires is required; and in order not to block the light-emitting area of the semiconductor stacked light-emitting structure 14, the temperature sensing element 12 is molded on the semiconductor The light-emitting structure 14 is stacked above, and therefore, the temperature sensing element 12 does not affect the luminous efficiency of the semiconductor stacked light-emitting structure 14 after the light-emitting diode wafer 1 is inverted.

The flip-chip form of the LED chip 1 can be formed by: providing a substrate 10; fabricating a semiconductor stacked light-emitting structure 14 on the substrate 10; and fabricating a temperature sensing element 12 and a first electrode (ie, The p-type layer electrode 144 in the first embodiment is mounted on the semiconductor stacked light-emitting structure 14, wherein the temperature sensing element 12 and the first electrode are defined by the same development etching process, and the development etching process is Further, a second electrode (ie, the n-type layer electrode 142) is defined on the semiconductor stacked light-emitting structure 14, wherein the height of the second electrode is close to the height of the first electrode, preferably the same horizontal plane. Furthermore, the above process further includes the step of fabricating an insulating layer 13 between the temperature sensing element 12 and the semiconductor stacked light emitting structure 14. On the other hand, since the temperature sensing element 12 and the first electrode are defined by the same development etching process, the temperature sensing element 12 and the first electrode can be described by the first embodiment. The metal film is patterned in such a manner that the temperature sensing element 12 is a serpentine or matrix form wiring structure formed on the metal film by a patterning step. In another process, the development etch process simultaneously defines the temperature sensing component 12, the first electrode, and the second electrode, and the temperature sensing component 12, the first electrode, and the second electrode can be borrowed. It is formed by patterning a metal film as described in the first embodiment, and the temperature sensing element 12 also has a structure of a serpentine or matrix form wiring.

Therefore, the present invention provides a flip-chip light-emitting diode wafer 1 having a temperature sensing element, comprising: a substrate 10; a semiconductor stacked light-emitting structure 14 on the substrate 10, wherein the semiconductor stacked light-emitting structure 14 comprises An n-type semiconductor layer 141, a semiconductor active layer 143, and a p-type semiconductor layer 144; and a temperature sensing element 12 disposed on the semiconductor stacked light-emitting structure 14. The LED chip 1 further includes an insulating layer 13 disposed between the temperature sensing element 12 and the semiconductor stacked light emitting structure 14; and a first electrode (ie, a p-type layer electrode 144) and a second The electrode (n-type layer electrode 142) is disposed on the semiconductor stacked light-emitting structure 14, and the first electrode is electrically connected to the p-type semiconductor layer, and the second electrode is electrically connected to the n-type semiconductor layer.

In addition, as shown in the seventh figure, in order to facilitate the subsequent flip chip process, the height H1 of the first electrode from the bottom of the substrate 10 and the height H2 of the second electrode from the bottom of the substrate 10 are nearly the same, and it can be said that the same is provided. The two electrodes of the height of the horizontal plane; however, the height H3 of the temperature sensing element 12 from the bottom of the substrate 10 is also nearly the same as the height H1 and height H2 described above. Similarly, the three can be regarded as the same horizontal height.

Furthermore, in other embodiments, the temperature sensing component 12 has two end electrodes 121, such that the temperature sensing component 12 can be electrically coupled to the temperature-controlled electronic processing unit by the two-terminal electrode 121. The processed signal can directly control other heat dissipating devices; and the temperature sensing component 12 is connected to the two end electrodes 121 by a lead 122, and the temperature sensing component 12 has a wiring line width smaller than the lead 122. Line width. In addition, the temperature sensing element 12 has a structure of a serpentine or matrix form wiring.

Therefore, the temperature sensing component 12 of the present invention can be applied to the LED body 1 of various package states, and is not limited to the above embodiment. In other words, the temperature sensing component 12 is located adjacent to the package. The lower surface of the wafer 1 of the structure 20 is intended to not cause luminescence loss of the semiconductor stacked light-emitting structure 14 after packaging, and the above-described process steps can be adjusted correspondingly with the position of the temperature sensing element 12. In addition, the temperature sensing component 12 can electrically couple the signal to the temperature-controlled electronic processing unit, so that the processed signal can directly control the fan or other heat sink for direct control. The heat sink performs the function of temperature control.

In summary, the present invention has the following advantages:

1. The temperature measurement results have high reliability. In the present invention, the temperature sensing element 12 is built in the light-emitting diode chip 1. Therefore, the temperature sensing element 12 is located relatively close to the PN interface in the LED chip 1, and thus the stability can be obtained. High and small error temperature measurement. Therefore, the problem of the inaccurate light-emitting diode temperature measured by the external sensing element can be solved (whether using the sensing element disposed inside the light-emitting diode package or outside the package) The problem of inaccurate measurement).

2. The light-emitting diode chip 1 of the present invention has the function of temperature sensing, so that the user can monitor the actual temperature of the light-emitting diode in real time, so as to accurately grasp the reliability of the light-emitting diode, The invention can be directly applied to the product, and can achieve the purpose of wafer temperature monitoring and warning with the circuit design.

3. The present invention deposits a metal film (such as a resistance thermometer) having a temperature sensing function under the PN light emitting structure, so that the effective light emitting area of the PN light emitting structure is not affected; and the material of the semiconductor stacked light emitting structure 14 The structure does not need to be greatly adjusted due to the temperature sensing component 12, so the existing packaging process can still be applied to the LED array 1 of the present invention, and the invention can be applied to various different LED packages. Therefore, it has quite good practical value.

The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, the equivalents of the present invention and the equivalents of the drawings are all included in the present invention. Within the scope of protection, it is given to Chen Ming.

1. . . Light-emitting diode chip

10. . . Substrate

10'. . . Conductive substrate

12. . . Temperature sensing element

121. . . Terminal electrode

122. . . lead

123. . . Auxiliary insulation

13. . . Insulation

14. . . Semiconductor stacked light emitting structure

141. . . N-type semiconductor layer

142. . . N-type layer electrode

143. . . P-type semiconductor layer

144. . . P-type layer electrode

145. . . Semiconductor active layer

20. . . Package structure

twenty two. . . Encapsulation resin

The first figure is a flow chart of a method of manufacturing a light-emitting diode wafer with a temperature sensing element of the present invention.

The second figure is a schematic view of the temperature sensing element of the present invention formed on a substrate.

The third figure is a schematic view of a first embodiment of a light-emitting diode wafer having a temperature sensing element of the present invention.

The third A is a cross-sectional view of 3A-3A in the third figure.

The third B diagram is a schematic diagram of the temperature sensing element of the serpentine wiring.

The fourth figure is a schematic view of the light-emitting diode wafer of the present invention after being packaged.

Figure 5 is a schematic illustration of a second embodiment of a light emitting diode wafer having a temperature sensing element of the present invention.

The sixth drawing is a cross-sectional view of the fifth figure.

Figure 7 is a schematic view of a third embodiment of a light-emitting diode wafer having a temperature sensing element of the present invention.

The eighth figure is a flip-chip package diagram of a light-emitting diode wafer with a temperature sensing element of the present invention.

1. . . Light-emitting diode chip

10. . . Substrate

121. . . Terminal electrode

13. . . Insulation

14. . . Semiconductor stacked light emitting structure

141. . . N-type semiconductor layer

142. . . N-type layer electrode

143. . . P-type semiconductor layer

144. . . P-type layer electrode

145. . . Semiconductor active layer

Claims (58)

A light emitting diode chip having a temperature sensing component, comprising: a substrate; a temperature sensing component disposed on the substrate; and a semiconductor stacked light emitting structure disposed on the substrate and the temperature sensing component Wherein the semiconductor stacked light emitting structure comprises: an n-type semiconductor layer, a semiconductor active layer and a p-type semiconductor layer. The light-emitting diode chip with a temperature sensing element according to claim 1, further comprising an insulating layer disposed between the substrate and the semiconductor stacked light-emitting structure, wherein the insulating layer is disposed on the Above the temperature sensing element, and the insulating layer has a flat upper surface. A light-emitting diode chip having a temperature sensing element according to claim 2, wherein the insulating layer is an insulating layer formed of zirconium nitride (ZrN) or/and aluminum nitride (AlN). The light-emitting diode chip with a temperature sensing element according to claim 1, wherein the temperature sensing element comprises two terminal electrodes. The LED device of claim 4, wherein the temperature sensing component is electrically coupled to the temperature-controlled electronic processing unit by the two-terminal electrode. The processed signal can directly control other heat sinks. The light-emitting diode chip with a temperature sensing element according to claim 4, wherein the two-terminal electrode is exposed in the semiconductor stacked light-emitting structure. A light-emitting diode chip having a temperature sensing element according to claim 1, wherein the temperature sensing element comprises a serpentine or matrix form wiring. The light-emitting diode chip with a temperature sensing element according to claim 4, wherein the temperature sensing element is connected to the two end electrodes by a lead wire, and the wiring line width of the temperature sensing element is It is less than the line width of the lead. A light-emitting diode device comprising the light-emitting diode chip with a temperature sensing element according to claim 1, wherein the light-emitting diode chip with the temperature sensing element is disposed on a package structure And the n-type semiconductor layer and the p-type semiconductor layer are electrically connected to the package structure by a wire. A method of manufacturing a light-emitting diode chip having a temperature sensing element, comprising the steps of: (a) providing a substrate; (b) fabricating a temperature sensing element on an upper surface of the substrate; and (c) fabricating a semiconductor Stacking the light emitting structure on the substrate and the temperature sensing element. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 10, wherein after the step (b), further comprising forming an insulating layer over the temperature sensing element. The method of manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 11, wherein the insulating layer has a flat upper surface, and the semiconductor stacked light-emitting structure is formed on the flat upper surface. . The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 11, wherein before the step of forming the insulating layer, the method further comprises the step of: providing a mask at the temperature The electrodes on both ends of the sensing element are such that after the step of forming the insulating layer, the electrodes at both ends of the temperature sensing element are exposed. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 11, wherein after the step of forming the insulating layer, the method further comprises a step of: defining by a lithography developing process The two ends of the temperature sensing element are electrically connected to the outside. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 10, wherein in the step (b), a metal thin film for constructing the temperature sensing element is formed. The method for producing a light-emitting diode wafer having a temperature sensing element according to claim 15, wherein the metal thin film is formed by evaporation. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 15 further comprising the step of patterning the metal film to construct the temperature sensing element. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 17, wherein the patterning step further comprises: forming a serpentine or matrix wiring on the metal film to construct the temperature sense. Measuring component. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 10, wherein the step (c) further comprises the following steps: (c1): fabricating an n-type semiconductor layer; (c2) a: a semiconductor active layer on the n-type semiconductor layer; and (c3): a p-type semiconductor layer on the semiconductor active layer. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 19, further comprising the steps of: forming a p-type layer electrode on the p-type semiconductor layer and one of the n An n-type layer electrode on a semiconductor layer. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 10, wherein the step (b) further comprises the steps of: forming an aluminum nitride (AlN) layer; and vaporizing ( Evaporating) forming a chromium (Cr) layer or a nickel layer (Ni) and a gold (Au) layer on the aluminum nitride layer; and depositing an aluminum nitride layer to coat the chromium layer or the nickel layer and the gold layer. A method for manufacturing a light-emitting diode chip with a temperature sensing element, comprising the steps of: providing a substrate; fabricating a semiconductor stacked light-emitting structure on the substrate; and fabricating a temperature sensing element and a first electrode on the semiconductor Stacked on the light structure. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 22, further comprising the step of: forming an auxiliary insulating layer between the temperature sensing element and the first electrode. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 22 or claim 23, further comprising the step of removing the substrate after the first electrode is formed. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 24, further comprising the step of: fabricating a second electrode on the semiconductor stacked light-emitting structure and the removed substrate Connected surface. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 25, further comprising the step of: electrically defining the temperature sensing element to be externally connected by an exposure and development process Both ends of the electrode. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 22 or 23, further comprising the step of: forming an insulating layer on the temperature sensing element and the semiconductor stacked light-emitting structure; between. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 22 or 23, further comprising patterning a metal film to construct the temperature sensing element. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 28, wherein the patterning step further comprises: forming a serpentine or matrix wiring on the metal film to construct the temperature sense. Measuring component. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 29, wherein the step of forming the metal thin film is: forming an aluminum nitride (AlN) layer; and evaporating successively Forming a chromium (Cr) layer or a nickel layer (Ni) and a gold (Au) layer over the aluminum nitride layer; and depositing an aluminum nitride layer to coat the chromium layer or the nickel layer and the gold layer. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 22, wherein the first electrode provides a flat upper surface for subsequent packaging process. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 22, wherein the temperature sensing element and the first electrode are defined by the same development etching process. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 32, wherein the developing etching process further defines a second electrode on the semiconductor stacked light-emitting structure, wherein the second electrode Not coplanar with the first electrode. The method for manufacturing a light-emitting diode chip having a temperature sensing element according to claim 32 or 33, further comprising the step of: forming an insulating layer on the temperature sensing element and the semiconductor stacked light emitting structure; between. The method for manufacturing a light-emitting diode wafer having a temperature sensing element according to claim 32 or 33, further comprising patterning a metal film to construct the temperature sensing element and the first electrode. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 35, wherein the patterning step further comprises: forming a serpentine or matrix form wiring on the metal film to construct the temperature sense. Measuring component. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 33, further comprising: patterning a metal film to construct the temperature sensing element, the first electrode and the first Two electrodes. The method for manufacturing a light-emitting diode chip with a temperature sensing element according to claim 37, wherein the patterning step further comprises: forming a serpentine or matrix form wiring on the metal film to construct the temperature sense. Measuring component. A vertical light-emitting diode chip with a temperature sensing component, comprising: a conductive substrate; a temperature sensing component disposed in the substrate; and an auxiliary insulating layer disposed between the conductive substrate and the temperature sensing component And a semiconductor stacked light emitting structure formed on the substrate and the temperature sensing element, wherein the semiconductor stacked light emitting structure comprises: an n-type semiconductor layer, a semiconductor active layer, and a p-type semiconductor layer. The vertical light emitting diode chip with temperature sensing element according to claim 39, further comprising an insulating layer disposed between the temperature sensing element and the semiconductor stacked light emitting structure. A vertical light-emitting diode chip having a temperature sensing element according to claim 40, wherein the insulating layer and the conductive substrate provide a flat surface. The vertical light-emitting diode chip with temperature sensing element according to claim 40, wherein the insulating layer is an insulating layer formed of zirconium nitride (ZrN) or/and aluminum nitride (AlN). body. The vertical light-emitting diode chip with temperature sensing element according to claim 39, wherein the temperature sensing element further comprises two terminal electrodes. The vertical light-emitting diode chip with a temperature sensing component according to claim 43 , wherein the temperature sensing component can be electrically coupled to the temperature-controlled electronic processing unit by the two-terminal electrode.经The processed signal can directly control other heat sinks. A vertical light emitting diode chip having a temperature sensing element according to claim 43 wherein the two end electrodes are exposed to the semiconductor stacked light emitting structure. A vertical light-emitting diode chip having a temperature sensing element according to claim 39, wherein the temperature sensing element is a snake-type or matrix-type wiring. The vertical light-emitting diode chip with a temperature sensing component according to claim 43 , wherein the temperature sensing component is connected to the two electrodes by a lead wire, wherein the temperature sensing component is wired. The line width is smaller than the lead line width. A light-emitting diode device comprising a vertical light-emitting diode chip having a temperature sensing element according to claim 39, wherein the vertical light-emitting diode chip with a temperature sensing element is disposed on In a package structure, the n-type semiconductor layer or the p-type semiconductor layer is electrically connected to the package structure by the conductive substrate. A flip-chip light-emitting diode chip having a temperature sensing element, comprising: a substrate; a semiconductor stacked light-emitting structure is disposed on the substrate, wherein the semiconductor stacked light-emitting structure comprises: an n-type semiconductor layer, a semiconductor active layer, and p A semiconductor layer is formed; and a temperature sensing element is disposed on the semiconductor stacked light emitting structure. The flip-chip light-emitting diode chip having a temperature sensing element according to claim 49, further comprising an insulating layer disposed between the temperature sensing element and the semiconductor stacked light-emitting structure. The flip-chip LED chip with temperature sensing element according to claim 49 or 50, further comprising a first electrode and a second electrode on the semiconductor stacked light-emitting structure, wherein The height of the first electrode is similar to the height of the second electrode. The flip-chip LED chip with a temperature sensing element according to claim 51, wherein the first electrode and the p-type semiconductor layer are electrically connected to the second electrode and the n-type semiconductor layer Electrical connection. A flip-chip light-emitting diode chip having a temperature sensing element according to claim 51, wherein the temperature sensing element comprises two terminal electrodes. The flip-chip LED chip with a temperature sensing component according to claim 52, wherein the temperature sensing component can be electrically coupled to the temperature-controlled electronic processing unit by the two-terminal electrode , so that the processed signal can directly control other heat sinks. A flip-chip light-emitting diode chip having a temperature sensing element according to claim 49, wherein the temperature sensing element is a snake-type or matrix-type wiring. The flip-chip LED chip with a temperature sensing component according to claim 52, wherein the temperature sensing component is connected to the two electrodes by a lead, and the temperature sensing component is The wiring line width is smaller than the lead line width. The flip-chip LED chip with temperature sensing element according to claim 51, wherein the height of the first electrode is close to the height of the temperature sensing element. A light-emitting diode device comprising a flip-chip light-emitting diode chip having a temperature sensing element according to claim 49, wherein the flip-chip light-emitting diode chip with temperature sensing element The flip-chip is disposed on a package structure, and the n-type semiconductor layer and the p-type semiconductor layer are electrically connected to the package structure by the flip chip.