TWI386495B - A multilayer coating mold - Google Patents

Description

Mold with multiple layers of plating

The present invention relates to a mold, and more particularly to a mold having a multi-layer coating.

With the development of society and the advancement of science and technology, people's performance requirements for molds are getting higher and higher. However, usually the mold substrate is generally difficult to meet the requirements of higher comprehensive performance, so it is often necessary to use surface treatment technology to plate some surface of the mold substrate with some modified materials to compensate for the deficiency of the mold substrate itself.

In recent years, driven by the rapid development of science and technology, a variety of carbon coatings have appeared in surface treatment technology. The carbon-like structure of the diamond-like structure is a mixture of amorphous carbon covalently bonded to the SP ² graphite plane bond and the SP ³ tetrahedral diamond. The graphite structure of the SP ² bond in the diamond-like carbon, the layer is bonded with the weak van der Waals bond, which makes the layer and the layer easily slide, which can make the diamond-like carbon coating have low friction coefficient and lubrication effect. , has a good release property.

Because diamond-like carbon has good coating performance, it is widely used in mold surface treatment technology. However, the prior art often uses a single layer of pure diamond-like carbon coating to improve the mold performance, and when the thickness of the diamond-like carbon coating is too thick, a large internal stress is generated, which makes the adhesion to the substrate poor, easy to fall off; When it is too thin, it is easy to diffuse the substrate element to the surface layer of the protective film, causing the diamond-like carbon coating to discolor and react with the substrate to lose its release property.

In view of the above, it is necessary to provide a coating die having strong adhesion to a substrate and excellent release property.

Hereinafter, a coating die having strong adhesion to a substrate and excellent release property will be described by way of specific examples.

A mold having a multi-layer coating, comprising a substrate, and sequentially forming a chromium layer or a chromium telluride layer, a tantalum layer, a tantalum carbide layer, a combined layer of tantalum carbide and carbon, and a hydrogen containing layer on the substrate Drilling carbon layer.

Compared with the prior art, the mold with multi-layer coating can enhance the adhesion of the subsequent coating to the substrate by forming a chromium layer or a chromium-deposited layer and a layer on the substrate; the outermost layer is made of a hydrogen-containing diamond. The carbon material can effectively enhance the release property of the mold; in addition, the tantalum carbide has a strong hardness, and a carbonized tantalum layer and a combination layer of tantalum carbide and carbon are used in the middle to enhance the wear resistance of the mold.

The embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

Referring to the first figure, a mold 100 having a multi-layer coating includes: a substrate 110, and a chromium layer or a chromium telluride layer 120, a tantalum layer 130, a tantalum carbide layer 140, and a combination of tantalum carbide and carbon. 150 and a hydrogen-containing diamond carbon layer 160.

The material of the substrate 110 is stainless steel, such as iron carbon chromium alloy, iron carbon chromium molybdenum alloy, iron carbon chromium niobium alloy, iron carbon chromium nickel molybdenum alloy, iron carbon chromium nickel titanium alloy, iron carbon chromium tungsten manganese alloy, Iron carbon chromium tungsten vanadium alloy, iron carbon chromium molybdenum vanadium alloy or iron carbon chromium molybdenum vanadium tantalum alloy.

The chromium layer or chromium telluride layer 120 has a thickness ranging from 2 to 8 nm, preferably from 4 to 6 nm.

The thickness of the ruthenium layer 130 is also in the range of 2 to 8 nm, preferably 4 to 6 nm.

The purpose of providing the chromium layer or chromium telluride layer 120 is to increase the adhesion of the subsequent plating layer to the substrate 110.

The thickness of the tantalum carbide layer 140 and the tantalum carbide and carbon combination layer 150 ranges from 20 to 100 nm, preferably from 40 to 80 nm. The hydrogen-containing diamond-like carbon layer 160 has a thickness ranging from 20 to 3,000 nm, preferably from 100 to 2,000 nm.

In conjunction with the second embodiment, a sputtering apparatus 200 is provided. The sputtering apparatus 200 has a sealing chamber 210. The sealing chamber 210 has a base 212 that is freely rotatable. A substrate 110 is disposed on the base 212. It can rotate with the base 212 and can also rotate. A rotatable fixing device 214 is disposed in the chamber 210 opposite to the base 212, and a first target 222, a second target 232 and a third target 242 are fixed thereon. The material of the first target 222 may be selected from chromium or chromium telluride, the second target 232 may be made of tantalum or tantalum carbide, and the third target 242 may be graphite.

The cathodes of the RF power sources 224, 234, and 244 are respectively connected to the first target 222, the second target 232, and the third target 242, and the anodes of the RF power sources 224, 234, and 244 are connected to the substrate 110. The operating frequencies of the RF power supplies 224, 234, and 244 are all 13.56 megahertz. A bias power supply 250 is disposed at one end of the base 212 to apply a negative bias on the base 212 to accelerate the deposition rate of positive ions to the substrate 110. The bias power supply 250 can be a direct current or an alternating current power source. In this embodiment, an alternating current power source is used, and the frequency thereof is 20 to 800 kHz, preferably 40 to 400 kHz, and the voltage is -100 to -30 volts, preferably -60. ~-40 volts.

Since the working chamber is filled with the working gas during the sputtering, the working gas is usually an inert gas which does not react with the target, the substrate 110 and the subsequently formed coating, and the inert gas may be argon or helium. Of course, the working gas may be a mixed gas of the above inert gas and other gases according to the needs of the layer to be coated. To this end, the chamber 210 is provided with an air suction port 260 and a gas input port 270.

The above-described mold 100 having a multi-layer coating includes the steps of forming a chromium layer or a chromium telluride layer 120 on the substrate 110. The specific steps are as follows: first, after the chamber 210 is evacuated from the air suction port 260, the chamber 210 is filled with argon or helium gas from the gas input port 270, and the RF power source 224 is turned on, and the RF power sources 234 and 244 are all turned off. The state, the rotating fixture 214 or the base 212 is such that the first target 222 is at a position perpendicular to the substrate 110, and a glow discharge occurs between the first target 222 and the base 212 as an anode, because the argon molecules are in the radio frequency. The power source 224 is ionized into a positively charged argon ion. Under the action of the electric field, the argon ions accelerate toward the negative electrode, that is, the first target 222, and continuously strike the surface of the first target 222, and the kinetic energy of the argon ion. Transfer to the target atoms, after the target atoms have sufficient kinetic energy, they are separated from the surface of the first target 222 and deposited on the substrate 110 to form the chromium layer or the chromium telluride layer 120. During the sputtering process, the substrate 110 can be rotated to sputter a relatively uniform chromium layer or chromium telluride layer 120 on the surface of the substrate 110. The rotation speed may be 10 to 200 rpm, preferably 20 to 80 rpm. And controlling the sputtering time, the thickness of the chromium layer or the chromium telluride layer 120 deposited on the substrate 110 is 2-8 nm, preferably 4-6 nm.

A layer of germanium 130 is formed on the chromium layer or chromium telluride layer 120. Similar to the principle of forming a chromium layer or a chromium telluride layer 120, the sputtering device 200 is also used, the RF power source 234 is turned on, the RF power source 224, 244 is turned off, and the fixture 214 or the base 212 is rotated to bring the second target 232 into contact with The substrate 110 is vertically opposed to a glow discharge between the second target 232 and the base 212 as an anode, thereby forming a germanium layer 130 on the chromium layer or the chromium telluride layer 120. In this step, the second target 232 is formed. The material is made of 矽. During the sputtering process, the substrate 110 can be rotated to deposit a relatively uniform layer 130 on the surface of the chromium layer or the chromium telluride layer 120. The rotation speed may be 10 to 200 rpm, preferably 20 to 80 rpm. And controlling the sputtering time, the thickness of the germanium layer 130 deposited on the chromium layer or the chromium telluride layer 120 is 2-8 nm, preferably 4-6 nm.

A tantalum carbide layer 140 is formed on the tantalum layer 130. Similar to the principle of forming the germanium layer 130, the sputtering apparatus 200 is also used, except that the material of the second target 232 is tantalum carbide in this step. The RF power source 234 is in an on state, and the RF power sources 224 and 244 are all in a closed state, and the fixing device 214 or the base 212 is rotated to position the second target 232 at a position perpendicular to the substrate 110 at the second target 232 and as an anode. A glow discharge occurs between the bases 212 to form a tantalum carbide layer 140 on the tantalum layer 130. During the sputtering process, the substrate 110 can be rotated to deposit a relatively uniform tantalum carbide layer 140 on the surface of the tantalum layer 130. The rotation speed may be 10 to 200 rpm, preferably 20 to 80 rpm. And controlling the sputtering time, the thickness of the tantalum carbide layer 140 is 20 to 100 nm, preferably 40 to 80 nm.

A combined layer 150 of tantalum carbide and carbon is formed on the tantalum carbide layer 140. Similar to the principle of forming the tantalum carbide layer 140, the sputtering apparatus 200 is also used, except that this step uses the second target 232 and the third target 242 to be collectively sputtered. The RF power source 234 is in an on state, and the RF power source 244 is turned on. The RF power source 224 is in a closed state, that is, the second target 232 and the third target 242 are used as cathodes, and the second target 232 and the third target 242 are Glow discharge is performed between the bases 212 to form a combined layer 150 of tantalum carbide and carbon on the tantalum carbide layer 140. During the sputtering process, the substrate 110 can be rotated to deposit a relatively uniform combination of tantalum carbide and carbon on the surface of the tantalum carbide layer 140. The rotation speed may be 10 to 200 rpm, preferably 20 to 80 rpm. And controlling the sputtering time, the thickness of the combined layer 150 of tantalum carbide and carbon is 20 to 100 nm, preferably 40 to 80 nm.

A hydrogen-containing diamond-like carbon layer 160 is formed on the combined layer 150 of tantalum carbide and carbon. Similar to the principle of forming the combined layer 150, the sputtering apparatus 200 is also used, except that the chamber 210 is evacuated from the suction port 260 under pressure conditions in the chamber 210, and then from the gas inlet 270 to the chamber. 210 is input with a certain proportion of a mixed gas of hydrogen and argon, and the ratio satisfies the condition that the volume ratio of hydrogen in the mixed gas is 5 to 20%. Of course, it is also possible to input a mixed gas of hydrogen and helium, a mixed gas of methane and argon or a mixed gas of methane and helium, wherein the volume ratio of hydrogen to methane in the mixed gas thereof is 5 to 20%. The RF power source 244 is in an on state, the RF power source 224 is in a closed state, and the RF power source 234 is turned off, that is, the third target 242 is used as a cathode, and the third target 242 is at a position perpendicular to the substrate 110, and is in a third position. A glow discharge is performed between the target 242 and the base 212 to form a hydrogen-containing diamond-like carbon layer 160 on the combined layer 150 of tantalum carbide and carbon. During the sputtering process, the substrate 110 can be rotated to deposit a relatively uniform hydrogen-containing diamond-like carbon layer 160 on the surface of the tantalum carbide-carbon combination layer 150. The rotation speed may be 10 to 200 rpm, preferably 20 to 80 rpm. And controlling the sputtering time, the thickness of the hydrogen-containing diamond-like carbon layer 160 is 20 to 3000 nm, preferably 100 to 2000 nm.

After the above process, a chromium layer or a chromium telluride layer 120, a tantalum layer 130, a tantalum carbide layer 140, a combined layer 150 of tantalum carbide and carbon, and a hydrogen-containing carbon layer are formed on the substrate 110. A mold 100 having a multi-layer coating of 160.

The mold 100 having the multi-layer coating provided by the embodiment can enhance the adhesion of the subsequent plating layer to the substrate 110 by forming a chromium layer or a chromium telluride layer 120 and a tantalum layer 130 on the substrate 110; the outermost layer is made of hydrogen. The diamond-like carbon material can effectively enhance the release property of the mold 100; in addition, the tantalum carbide has a strong hardness, and a carbonized tantalum layer 140 and a combination layer 150 of tantalum carbide and carbon are used in the middle to enhance the wear resistance of the mold 100. Sex.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art of the present invention should be included in the following claims.

Mold. . . 100

Substrate. . . 110

Chrome layer or chrome layer. . . 120

Layer of enamel. . . 130

Carbide layer. . . 140

Combination layer. . . 150

Hydrogen-like carbon layer. . . 160

Sputtering device. . . 200

Chamber. . . 210

Base. . . 212

Fixtures. . . 214

Target. . . 222, 232, 242

RF power supply. . . 224, 234, 244

Bias power supply. . . 250

Pumping port. . . 260

Gas inlet. . . 270

The first figure is a schematic view of a mold having a multi-layer coating provided by this embodiment.

The second drawing is a schematic view of the apparatus for forming the mold having the multi-layer coating in this embodiment.

Mold. . . 100

Substrate. . . 110

Chrome or chrome layer. . . 120

Layer of enamel. . . 130

Carbide layer. . . 140

Combination layer. . . 150

Hydrogen-like carbon layer. . . 160

Claims (10)

A mold having a multi-layer coating, comprising a substrate, and sequentially forming a chromium layer or a chromium telluride layer, a tantalum layer, a tantalum carbide layer, a combined layer of tantalum carbide and carbon, and a hydrogen containing layer on the substrate Drilling carbon layer. The mold having a multi-layer coating according to claim 1, wherein the material of the substrate is selected from the group consisting of iron carbon chromium alloy, iron carbon chromium molybdenum alloy, iron carbon chromium niobium alloy, iron carbon chromium nickel molybdenum alloy, iron carbon. Chromium nickel titanium alloy, iron carbon chromium tungsten manganese alloy, iron carbon chromium tungsten vanadium alloy, iron carbon chromium molybdenum vanadium alloy and iron carbon chromium mo The mold having a multi-layer coating according to claim 1, wherein the chromium layer or the chromium telluride layer has a thickness ranging from 2 to 8 nm. The mold having a multi-layer coating according to claim 3, wherein the chromium layer or the chromium telluride layer has a thickness ranging from 4 to 6 nm. The mold having a multi-layer coating according to claim 1, wherein the thickness of the enamel layer ranges from 2 to 8 nm. The mold having a multi-layer coating according to claim 5, wherein the thickness of the ruthenium layer ranges from 4 to 6 nm. The mold having a multi-layer coating according to the first aspect of the invention, wherein the tantalum carbide layer and the combined layer of tantalum carbide and carbon have a thickness ranging from 20 to 100 nm. The mold having a multi-layer coating according to claim 7, wherein the tantalum carbide layer and the combined layer of tantalum carbide and carbon have a thickness ranging from 40 to 80 nm. The mold having a multi-layer coating according to claim 1, wherein the hydrogen-containing carbon layer has a thickness ranging from 20 to 3000 nm. The mold having a multi-layer coating according to claim 9, wherein the hydrogen-containing carbon layer has a thickness ranging from 100 to 2,000 nm.