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TWI376039B - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
TWI376039B
TWI376039B TW096105560A TW96105560A TWI376039B TW I376039 B TWI376039 B TW I376039B TW 096105560 A TW096105560 A TW 096105560A TW 96105560 A TW96105560 A TW 96105560A TW I376039 B TWI376039 B TW I376039B
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TW
Taiwan
Prior art keywords
light
emitting diode
emitting
semiconductor layer
electrode
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Application number
TW096105560A
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Chinese (zh)
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TW200739968A (en
Inventor
Kyousuke Masuya
Original Assignee
Showa Denko Kk
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Publication of TW200739968A publication Critical patent/TW200739968A/en
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Publication of TWI376039B publication Critical patent/TWI376039B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01049—Indium [In]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

A light-emitting diode (10) has a main light-extracting surface and includes a compound semiconductor layer (13) including semiconductor layers (130 to 135), a light-emitting part (12) contained in the compound semiconductor layer, a light-emitting layer (133) contained in the light-emitting part, a transparent substrate (14) joined to the compound semiconductor layer, and first and second electrodes (15, 16) of opposite polarities formed on the main light-extracting surface on the side opposite the transparent substrate. The second electrode is formed at a position on the portion of the compound semiconductor layer exposed by removing the semiconductor layers (132 to 134) and has the periphery thereof enclosed with the semiconductor layers. The main light-extracting surface has an external shape having the largest width of 0.8 mm or more.

Description

1376039 (1) 九、發明說明 【發明所屬之技術領域】 本發明關於一發光二極體，特別是關於具有高亮度之 透明基底、接面型、大型的發光二極體。 【先前技術】 有關可發出紅色、橙色、黃色或黃綠色可見光的發光 二極體（LED)，迄今已知具鋁-鎵-銦磷化物（ (AlxGa丨·χ)γΙη丨·ΥΡ，其中 OSXS1，0SYS1 )所形成之發光 層的該複合半導體LED。在此類該LED中，具 (AlxGa丨_x)YIn丨·ΥΡ (其中 0SXS1，0SYS1 )所形成之發光 層的該發光部分通常形成於例如鎵砷化物（GaAs )的基 底材料上，其對於該發光層所發射之光是不透光的且機械 上不致太強。 最近，因此鑑於獲得較高亮度的可見LED及具有進 一步提昇該裝置之該機械強度的該目標，已開發出排除不 可透過該發光之基底材料，並重新結合可傳輸該發光及機 械力優於以往之支撐層（透明基底）而裝配接面型LED 的該技術（參考例如日本專利No. 3230638、 JP-A HEI 6-302857、JP-A 2002-246640、日本專利 2588849 及 JP-A 2001-57441)。 爲獲得高亮度的可見LED，已使用用於藉利用裝置之 該形狀而提昇光汲取之該效率的方法》在具有分別形成於 半導體發光二極體之該第一表面及該背部表面上電極之裝 -4- (2) (2)1376039 置的該組態中，已揭露藉利用側面之該形狀而有效提供高 亮度的該技術（參考例如JP-A SHO 5 8-3498 5及美國專利 No. 6229 1 60 )。 儘管該接面型LED已可提供高亮度的LED，仍存在 尋$更高亮度之LED的該需求。已提出裝配該裝置的眾 多形狀而具有分別形成於發光二極體之該第一表面及該背 部表面的電極。具有二形成於光汲取表面之電極的組態的 該裝置形狀複雜，且不適於顧及側面的該狀態及電極的該 配置。 本發明的產生爲了解決該上述問題並指向置於具二電 極之該光汲取表面上的該發光二極體，重點在提供展現高 效率之光之汲取的高亮度的發光二極體。 【發明內容】 本發明的揭露： 本發明提供做爲具有主要光汲取表面之發光二極體的 該第一觀點並包含：包括半導體層的複合半導體層、該複 合半導體層中所包含的發光部分、該發光部分中所包含的 發光層、連結該複合半導體層的透明基底及形成於該透明 基底相對側上之該主要光汲取表面上具相反極性的第一及 第二電極，其中該第二電極係形成於藉移除該半導體層而 暴露之該複合半導體層之一部分的位置上，並具有以該半 導體層圍住的周圍，及其中該主要光汲取表面具有具 0.8mm或更多之最大寬度的外部形狀。 -5- (3) (3)!376039 本發明的該第二觀點指向該第一觀點的該發光二極體 ’其中該透明基底爲能被自該發光部分發射之光穿透的基 底。 本發明的該第三觀點指向該第一或第二觀點的該發光 二極體，其中該透明基底包含幾乎垂直並落於該發光部分 之一側上的第一側面，及接續該第一側面並具有形成於遠 離該發光層之一側之傾斜面的第二側面。 本發明的該第四觀點指向該第三觀點的該發光二極體 ’其中該第二側面的該傾斜面具有10°或更多並小於20° 的傾斜角，且其中該發光部分當看似凸出發光表面上時， 具有形成於該第二側面之上的部分。 本發明的該第五觀點指向任一之該第一至該第四觀點 的該發光二極體，其中該透明基底具有一底表面，其上形 成具0.1/zm至10//m範圍之高度差異的不平整。 本發明的該第六觀點指向任一之該第一至該第五觀點 的該發光二極體，其中該透明基底係由GaP形成。 本發明的該第七觀點指向該第六觀點的該發光二極體 ，其中該透明基底係由η-型GaP形成，並具有粗糙（1 1 1 )面做爲其主要表面。 本發明的該第八觀點指向任一之該第一至該第七觀點 的該發光二極體’其中該透明基底具有50至300/zm範 圍的厚度。 本發明的該第九觀點指向任一之該第一至該第八觀點 的該發光二極體，其中該發光層、第一電極及第二電極各 -6- (4) (4)1376039 具有區域54、8|及S2，在該發光二極體之發光表面的外 部形狀具有100%區域的狀況下，滿足80%<SA<90% ' ΙΟΧβ,βΟ% 及 5%<S2<l〇% 的關係。 本發明的該第十觀點指向任一之該第一至該第九觀點 的該發光二極體，其中該第二電極係由二或更多相等長度 平行延伸並具在相對側之末端點的直線組成，其中連接每 一側之該末端點的虛線與該發光二極體的側面幾乎平行的 配置，且一或多條線於任意選擇之該平行直線的該相對部 分之一連接兩鄰近平行直線之較近側的該末端點。 本發明的該第十一觀點指向任一之該第三至該第十觀 點的該發光二極體，其中當該第二電極凸出發光表面上時 ，其便易於落在該第二面之該傾斜表面的範圍之外》 本發明的該第十二觀點指向任一之該第一至該第十一 觀點的該發光二極體，其中該第二電極的末端與該發光部 分的末端之間的距離Εμηι，及主要發光波長λ〇ηιη滿足 570 < λ〇 < 63 5 S. 0.8χλο-350< Ε< 1·6χλυ-750。 本發明的該第十三觀點指向任一之該第一至該第十二 觀點的該發光二極體，其中當該第一電極係經結合具15 或更少之寬度的線而形成時，該鄰近線與主要發光波 長XDnm之間的距離D//m滿足570<λ〇< 635及0.4¥入〇-200<D<0.8xXd-400 的關係》 本發明的該第十四觀點指向任一之該第一至該第十三 觀點的該發光二極體，進一步包含形成以便覆蓋該第一電 極及至少部分該光汲取表面的透明導電膜。 (5) (5)1376039 本發明的該第十五觀點指向第十四觀點的該發光二極 體’其中該透明導電膜係由ITO形成。 本發明的該第十六觀點指向任一之該第一至該第十五 觀點的該發光二極體，其中該發光部分包含一GaP層且 該第二電極形成於該GaP層之上。 本發明的該第十七觀點指向任一之該第一至該第十六 觀點的該發光二極體，其中該第一電極爲η-型極性及該 第二電極爲Ρ·型極性。 本發明的該第十八觀點指向任一之該第一至該第十七 觀點的該發光二極體，其中包含該發光部分的該複合半導 體層係由（ΑΙχΟα^ΟγΙη,-γΡ ( 0SXS1，OSYS1)之合成物形 成。 本發明的該第十九觀點指向任一之該第一至該第十八 觀點的該發光二極體，其中該發光部分包含AlGalnP。 本發明的該第二十觀點指向任一之該第三至該第十九 觀點的該發光二極體’其中該第一側面及該第二側面係經 由該切片方法而形成。 依據本發明，可提高自LED之該發光部分的光汲取 的該效率，並因而完成顯示高亮度之發光二極體的提供。 經由文中參考該附圖所提供之該描述，本發明的該上 述及其他目標、特徵及優點對於熟悉本技藝之人士而言將 變得顯而易見。 【實施方式】 -8- (6) (6)1376039 實施本發明的最佳模式： 本發明所考量該發光部分爲包含發光層並具Ρ·η接面 的複合半導體堆疊結構。該發光層可以任一該傳導類型（ 即η-型及ρ-型）之複合半導體組成。該複合半導體較佳 地由該一般方程式（入1；(〇31.5()丫11114?(〇5又$1，〇£丫$1)代 表。儘管該發光部分可爲任一之該二不同結構，單一量子 井（SQW)及多重量子井（MQW)，爲獲得優於單色性 之發光的緣故，其適於選擇該MQW結構。確定了組成該 量子井（QW)的該障礙層及形成該井層的 (AlxGa,.x)Yln1.YP ( 0<X<1 - 0<Y<1 )合成物，使得引發預 期波長之發光的量子位準可形成於該井層中。 該發光部分包含該發光層，且基於啓動可引發輻射再 結合及"陷入"該發光層之該發光的該障礙的該目標，包含 分別置於該發光層之該相對側上的包覆層，彼此相對以形 成所謂雙異質（DH)結構。此最有利於確保高密度的該 發光。該包覆層較適於以具較寬禁止帶的半導體材料形成 ，而非形成該發光層並展現高折射率的該複合半導體。關 於可發射波長約570 nm之黃綠光並以 (AlojGao.do.sInG.sP形成的該發光層，該包覆層係以例如 (Al〇.7Ga〇.3)〇.5In〇.5P 合成物形成（Y. Hosokawa et al.，J. Crystal Growth, 221 (2000)，652-656 )。在該發光層及每 一該包覆層之間，可於該二層之間插入用於適當修改該帶 中斷的中間層。在此狀況下，該中間層較佳地以具中等禁 止帶寬度之半導體材料形成於該發光層與該包覆層之間。 -9- (7) (7)1376039 爲提昇亮度、熱輻射屬性及機械強度，本發明藉由連 接透明基底與生成於半導體基底上並包含發光層的發光部 分，而預期產生特徵屬性中的優良結構。可以下列材料形 成該透明基底，例如鎵磷化物（GaP )或鋁-鎵砷化物（ AlGaAs)等III-V族複合半導體晶體、例如硫化鋅（ZnS )或硒化鋅（ZnSe)等II-VI族複合半導體晶體、或例如 六角或立方碳化矽（SiC )等IV族半導體晶體。 該透明基底較佳地具有約50;/m或更多的厚度，以 便可以足夠的機械力支撐該發光部分。亦較佳地具有不超 過約300ym的厚度，以便可輕易地受制於後續將連接的 機械處理。在具有以（AlxGa^OYlm.YP ( 0SXS1，0SYS1 ) 形成之發光層的該複合半導體LED中，例如，其最適於 具有以η-型GaP單晶形成之該透明基底，並具有約50 //m或更多及約300//m或更少的厚度。 特別是當該透明基底選擇鎵磷化物（GaP )做爲便於 自以（AlxGa^hlm-YP ( 05X51，05YS1 )形成之該發光層 所發之光傳輸至該外部的材料時，至具有該相同材料品質 之該GaP表面的該接面有利於獲得好的接面狀況，例如 高機械力及熱膨脹係數的一致。 當該主要光汲取表面的該外部形狀具有0.8 mm或更 多之該最大寬度時，本發明展現最大的效果。該名詞"最 大寬度"係指該表面之該外部形狀的該最長部分。在矩形 或方形的該狀況下，例如，該對角線構成該最大寬度。該 結構的該採用對於符合近年來所需高電流用途的該發光二 -10- (8) (8)1376039 極體是必要的事。當該尺寸變大時，經由電極停機之該設 計的該特定裝置組態證實啓動該電流的均勻流動是重要的 〇 本發明進一步要求將形成於該周邊之位置上的該第二 電極可由該半導體層所包圍。經由採用此結構，使其可形 成該半導體層至該第二電極的均勻距離，允許該電流的均 勻流動，及在不增加該阻抗下使該第二電極之區域最小化 。由於該第二電極係形成於該發光層移除之後的該剩餘區 域中，該區域的該最小化引發呈現高亮度的效果。 特別是本發明較佳地具有一結構，其中該發光部分包 含GaP層，且該第二電極係形成於該GaP層上。經由採 用該結構且由於該GaP爲做爲井的透明材料，使得形成 一歐姆電極，其展現對於金屬的低接觸阻抗，並引發截止 阻抗的效果。 將連接之該透明基底較佳地爲允許大量生產並展現穩 定品質的基底，且具體較佳地包含不昂貴之可獲得的GaP 單晶》該基底較佳地具有（1 〇〇 )面或（1 1 1 )面。其特別 有利地是使用具有幾乎（111)面做爲該主要表面的n_型 GaP單晶。該η-型基底相較於該相同雜質濃度的該ρ·型 基底具有高的傳輸因子，因而證實有利於展現高亮度。這 是因爲該（111)面具有允許簡單不規則形成的特徵屬性 該發光部分可形成於該III-V族複合半導體單晶基底 的該表面上，例如鎵砷化物（GaAs )、銦磷化物（InP ) (9) (9)1376039 、或鎵磷化物（GaP)或該矽（Si)基底。該發光部分有 利地形成於該雙異質（DH )結構中，其可"陷入"連結負 責輻射再結合之該障礙的該發光。接著，該發光層有利地 以該SQW結構或該多重量子井（MQW)結構形成，以便 獲得卓越單色性的光發射。關於形成該發光部分之該元件 層的該機構的範例，可列舉該金屬有機化學蒸汽沈積（ MOCVD )機構、分子光束外延（MBE )機構及該液相外 延（LPE)機構。 在該基底與該發光部分之間，插入滿足緩和該基底之 該材料與該發光部分之該元件層間該柵格錯誤結合之功能 的緩衝器層，用於將自該發光層發射之該光反射至該裝置 之該外部的Bragg反射層，用於選擇的蝕刻的蝕刻停止層 等。接著，在該發光部分的該元件層上，可配置降低該歐 姆電極之該接點阻抗的接點層，用於擴散遍佈該發光部分 之該整個平面的該裝置作業電流的電流擴散層，用於限制 通過該裝置作業電流之該區域的電流禁止層，電流壓縮層 等。 本發明的待徵在於具有第一電極及與形成於該發光二 極體之該主要光汲取表面上該第一電極不同極性的第二電 極。用於本發明中該名詞"主要光汲取表面"係指落於將連 接之該透明基底相對表面側之該發光部分的該表面。 在本發明中*經由形成該結構中該電極，可排除將留 意該透明基底之該通過電流的該必要性。因而，可自各式 材料之間選擇具高傳輸因子的該材料，例如絕緣體及高阻 -12- 1376039 do) 抗半導體，且具高傳輸因子之該基底的該接面啓動高亮度 的展現。 本發明亦有利地使用該透明基底，在其側面之間，位 於接近該發光層之一側部分幾乎垂直於該發光層之該發光 表面的第一側面，及位於遠離該發光層之一側部分與該發 光表面傾斜的第二側面。該第二側面延續進入該第一側面 。該傾斜較佳地指向該半導體層的該內側。本發明採用該 結構的該原因包含使得自該發光層發射朝向該透明基底之 該光將有效率地被汲取至該外部。即，自該發光層發射朝 向該透明基底之該光的部分於該第一側面上反射，並經汲 取通過該第二側面。在該第二側面上反射的該光可經汲取 通過該第一側面。該第一側面及該第二側面之該協同作用 的效果使得該光之該汲取的該機率提高。 本發明較佳地使該第二電極形成於上述該第二側面之 該傾斜的結構的該位置以外的位置上（檢視凸出部分）。 該第二側面之傾斜的該角度爲1 0°以上20°以下。較佳地 檢視該發光表面的凸出部分，部分該發光部分形成於該第 二側面之上。在本發明中，經由於該位置上形成該第二電 極’可展現高亮度並提昇通過該傾斜的表面之光汲取的效 率 〇 在本發明中，該第二電極較佳地由二或更多相等長度 平行延伸並具末端點的直線組成，其中連接每一側之該末 端點的虛線與該晶片的側面幾乎平行的配置，且一或多條 線於任意選擇之該平行直線的該相對部分之一連接兩鄰近 -13- (11) 1376039 平行直線之較近側的該末端點（參照圖1、圖6、 圖9)。經由採用該形狀，可使該第二電極覆蓋I 光部分並使其中區域最小化。經由提昇平行線的該 可處理較大的晶片。連接該平行線之該末端點的該 利地使得該電極的該區域最小化。由於該第二電極 線路連結所需的塡補部分上，該線可配合使該塡補 配置的該自由而爲曲線或彎線。定位該塡補部分之 的提昇使得有利於該晶片的該製造。 爲了均勻地擴散該發光部分中該電流，該第二 須相對於該發光部分均勻地配置。當該電極與距該 該發光部分的最遠部分之間的該距離過大時，該電 擴散於整個該發光部分。儘管該電流的擴散沒有問 該該距離過小時，電極的該數量（區域）便增加， 光汲取區增加，且該亮度降低。允許該電流自該電 的該距離隨該發光的該波長而異。在AlGalnP (該 該波長：大於570 nm小於635 nm)的該發光層中 流之擴散的該距離隨該波長增加而增加。因而’該 距該電極之該發光部分的最遠部分之間的該距離相 發光之該波長具有該最佳範圍。關於該第二電極’ 有利地形成一結構，使得以E( //m)表示之該第 的該末端（該電極最接近該裝置之該周邊的該部分 發光部分的該末端（該發光部分最接近該裝置之該 該部分）之間的該距離，及以λ〇 ( nm )表示之該 光波長滿足該關係，〇.8>aD-350<E<1.6xXD-750’ 圖7及 個該發 數量， 線極有 需置於 部分之 該自由 電極必 電極之 流便未 題，但 因而該 極擴散 發光的 ，該電 電極與 對於該 本發明 二電極 )與該 周邊的 主要發 該發光 -14- (12) (12)1376039 之該波長爲5 70 <λ〇< 63 5。 該上述關係源自於劃分遍佈整個該發光部分之該電流 的擴散區域，且如圖18中所示，配賦予該橫軸之該發光 的該波長及配賦予該縱軸之該第二電極的未端與該發光部 分的末端之間的該距離，允許其中左項表示該區域的該下 限制，且其中右項表示該區域的該上限制，並代表隨該發 光之該波長而增加的該上述距離的該範圍擴張出現。經由 採用上述該形狀，得以獲得遍佈整個該發光部分之該電流 的擴散，抑制做爲井之該電極的該區域的增加，避免經由 該光汲取區域之該減少而降低該亮度，並實現高亮度的展 現。此外，滿足該第二電極應配置於除了該傾斜的側面之 該上端以外位置上的該上述狀況。 該第一電極同樣地具有相對於該發光之該波長的該電 流擴散距離的該最佳範圍。本發明有利地形成一結構，使 得在該第一電極經由合成具l5#m或更少之寬度的線而 形成，且該鄰近線之間該距離係以D( //m)表示及該主 要發光波長係以λ0(ηπι)表示的該狀況下，如圖19中所 示，滿足 5 70 <XD< 63 5 及 0.4xXD-200 <D<0.8>aD-400 的 關係。該上述關係式表示允許該發光部分中該電流均勻擴 散的該區域。該部分於該第一電極的該間隔過寬時不允許 該電流的擴散。當該間隔過窄時，要求該電極的該區域增 加。經由採取此結構’獲得遍佈整個該發光部分之該電流 的擴散，抑制該電極之該區域的增加，避免經由該光汲取 區域之該減少而降低該亮度，並實現高亮度的展現。 -15- (13) (13)1376039 本發明有利地使該第二側面與該第一側面之間的該角 度落於1〇°至2〇。的該範圍。經由採取此結構，使能獲得 將該透明基底之該底部部分所反射至該外部之光的有效率 地汲取。 接著’本發明有利地使該第一側面的該寬度（厚度的 方向）落於30//m至100;zm的該範圍。經由具有落於該 範圍中該第一側面的該寬度，該透明基底之該底部部分所 反射的該光可於該第一側面的該部分有效地回至該發光表 面’且進一步發射通過該主要光汲取表面，結果將成功地 獲得該發光二極體的發光效率。 本發明較佳地以包含GaP層的結構形成該發光部分 ’並允許該第二電極形成於該GaP層上。該結構的該採 用結果獲得降低該作業電壓的效果。經由於該GaP層上 形成該第二電極，使能獲得良好歐姆接點並降低該作業電 壓。 本發明較佳地形成η-型極性的該第一電極及p-型極 性的該第二電極。該結構的該採用結果引發展現高亮度的 效果。該Ρ_型之該第一電極的該形成使得電流的該擴散 由於高電阻抗而惡化，並引發該亮度的下降。該η-型之 該第一電極的該形成使得提昇電流的該擴散，並獲得高亮 度的展示。 本發明有利地使該透明基底的該傾斜的表面變粗。該 結構的該採用結果獲得提昇光汲取通過該傾斜的表面之該 效率的效果》經由使該傾斜的表面變粗，使其可抑制該傾 -16- (14) (14)1376039 斜的表面上總反射，並提昇光汲取的該效率。該表面可經 由以包含磷酸、過氧化氫及水 +鹽酸之混合物的該化學 鈾刻而加以變粗。 接著，本發明有利地形成具有該透明基底之該底表面 上Ο.Ι/im至10#m之該範圍的高度差的不規則。該結構 的該採用引發使將反射之陷入該晶片的該光擴散地及有效 率地汲取至該晶片外部的效果。 本發明有利地經由該切片方法而形成該第二側面。該 製造方法的該採用結果引發提昇該產量的效果。儘管該第 二側面的該形成可經由合成數種方法而達成，例如乾式蝕 刻、濕式蝕刻' 劃線器方法及雷射處理方法，該切片方法 由於其控制形狀的能力及產量的卓越而證實爲最適。 本發明有利地經由該切片方法而形成該第一側面。該 製造方法的該採用使能降低該生產成本。具體地，由於該 製造方法不需允許分割晶片時的切割邊界，可生產大量的 發光二極體並因而可降低該生產成本。該製造方法的該採 用結果提昇光汲取通過該第一側面之該效率，並完成高亮 度的展示。 本發明有利地以一種結構形成該發光二極體，使得分 別以3/^、81及S2表示的該發光層的該區域、該第一電極 的該區域及該第二電極的該表面，在該發光二極體之發光 表面的該外部形狀具有100%區域的狀況下，滿足80% <SA<90%、及 5%<S2<10% 的關係。由於小 電極區域可滿足自光發射之大區域的光發射，該形狀的該 -17- (15) 1376039 ^ 採用啓動高亮度的展現。 本發明有利地具有所形成的該透明電傳導膜而覆蓋該 第一電極及部分該光汲取表面。該形狀的該採用結果啓動 該透明電傳導膜而利於該電流的擴散，便允許製造低作業 電壓的LED晶片。本發明進一步有利地以ITO形成該透 . 明電傳導膜。該ITO顯露低阻抗並擁有高傳輸因子，引發 在不受光汲取之干擾下降低該作業電壓的效果。 範例1 : 範例1提供製造本發明所考量發光二極體之範例的具 體說明。 圖1及圖2描繪範例1中所製造該半導體發光二極體 Μ :圖1爲平面圖’且圖2爲跨越圖1沿線ΙΙ-ΙΙ之截面圖 ' 。圖3爲用於該半導體發光二極體之半導體外延晶圓的截 面圖。 • 範例 1中所製造的半導體發光二極體10爲具1376039 (1) Description of the Invention [Technical Field] The present invention relates to a light-emitting diode, and more particularly to a transparent substrate having a high luminance, a junction type, and a large-sized light-emitting diode. [Prior Art] A light-emitting diode (LED) which emits red, orange, yellow or yellow-green visible light is known to have an aluminum-gallium-indium phosphide ((AlxGa丨·χ)γΙη丨·ΥΡ, among which OSXS1 , 0SYS1) The composite semiconductor LED of the luminescent layer formed. In such an LED, the light-emitting portion of the light-emitting layer formed of (AlxGa丨_x)YIn丨·ΥΡ (where 0SXS1, 0SYS1) is usually formed on a base material such as gallium arsenide (GaAs), which is The light emitted by the luminescent layer is opaque and mechanically not too strong. Recently, in view of the goal of obtaining a bright LED with higher brightness and having the objective of further enhancing the mechanical strength of the device, it has been developed to eliminate the substrate material that is impermeable to the light, and recombining to transmit the light and mechanical force is superior to the past. The support layer (transparent substrate) is a technique for assembling a junction type LED (refer to, for example, Japanese Patent No. 3230638, JP-A HEI 6-302857, JP-A 2002-246640, Japanese Patent No. 2588849, and JP-A 2001-57441 ). In order to obtain a high-brightness visible LED, a method for enhancing the efficiency of light extraction by utilizing the shape of the device has been used, which has electrodes formed on the first surface and the back surface of the semiconductor light-emitting diode, respectively. In the configuration in which -4-(2) (2) 1376039 is placed, the technique of effectively providing high brightness by utilizing the shape of the side has been disclosed (refer to, for example, JP-A SHO 5 8-3498 5 and US Patent No. 6229 1 60 ). Although the junction type LED has been able to provide high brightness LEDs, there is still a need to find LEDs with higher brightness. It has been proposed to assemble a plurality of shapes of the device and have electrodes respectively formed on the first surface and the back surface of the light-emitting diode. The configuration of the device having two electrodes formed on the light extraction surface is complicated in shape and is not suitable for the state of the side and the arrangement of the electrodes. The present invention has been made in order to solve the above problems and to point to the light-emitting diode disposed on the light-receiving surface having two electrodes, focusing on providing a high-luminance light-emitting diode which exhibits high-efficiency light. SUMMARY OF THE INVENTION The present invention provides the first aspect of a light-emitting diode having a main light extraction surface and includes: a composite semiconductor layer including a semiconductor layer, and a light-emitting portion included in the composite semiconductor layer a light emitting layer included in the light emitting portion, a transparent substrate connecting the composite semiconductor layer, and first and second electrodes having opposite polarities on the main light capturing surface formed on opposite sides of the transparent substrate, wherein the second An electrode system is formed at a position of a portion of the composite semiconductor layer exposed by removing the semiconductor layer, and has a periphery surrounded by the semiconductor layer, and wherein the main light extraction surface has a maximum of 0.8 mm or more The outer shape of the width. -5- (3) (3)! 376039 This second aspect of the invention is directed to the light-emitting diode of the first aspect, wherein the transparent substrate is a substrate that can be penetrated by light emitted from the light-emitting portion. The third aspect of the present invention is directed to the light emitting diode of the first or second aspect, wherein the transparent substrate comprises a first side that is substantially perpendicular and falls on one side of the light emitting portion, and the first side is continued And having a second side surface formed on an inclined surface away from one side of the light emitting layer. The fourth aspect of the present invention is directed to the light-emitting diode of the third aspect, wherein the inclined surface of the second side has an inclination angle of 10 or more and less than 20, and wherein the light-emitting portion appears to be When protruding on the light emitting surface, there is a portion formed on the second side. The fifth aspect of the present invention is directed to the light emitting diode of any of the first to fourth aspects, wherein the transparent substrate has a bottom surface on which a height ranging from 0.1/zm to 10/m is formed The unevenness of the difference. This sixth aspect of the invention points to the light-emitting diode of any of the first to the fifth aspects, wherein the transparent substrate is formed of GaP. This seventh aspect of the present invention is directed to the light-emitting diode of the sixth aspect, wherein the transparent substrate is formed of η-type GaP and has a rough (1 1 1 ) plane as its main surface. The eighth aspect of the present invention is directed to the light-emitting diodes of any of the first to seventh aspects, wherein the transparent substrate has a thickness in the range of 50 to 300/zm. The ninth aspect of the present invention is directed to the light emitting diode of any one of the first to the eighth aspects, wherein the light emitting layer, the first electrode and the second electrode each have -6-(4)(4)1376039 The regions 54, 8| and S2 satisfy 80% <SA<90% 'ΙΟΧβ, βΟ% and 5%<S2<l in the case where the outer shape of the light-emitting surface of the light-emitting diode has a 100% area 〇% relationship. The tenth aspect of the present invention is directed to the light emitting diode of any of the first to the ninth aspects, wherein the second electrode is extended in parallel by two or more equal lengths and has an end point on the opposite side a straight line composition in which a dotted line connecting the end points of each side is arranged almost parallel to a side surface of the light emitting diode, and one or more lines are connected in parallel to one of the opposite portions of the parallel line arbitrarily selected The end point on the near side of the line. The eleventh aspect of the present invention is directed to the light emitting diode of any of the third to tenth aspects, wherein when the second electrode protrudes from the light emitting surface, it is liable to fall on the second side The twelfth aspect of the invention is directed to the light-emitting diode of any of the first to the eleventh aspects, wherein the end of the second electrode and the end of the light-emitting portion The distance Εμηι, and the main illuminating wavelength λ〇ηιη satisfy 570 < λ 〇 < 63 5 S. 0.8 χ λο - 350 < Ε < 1·6 χ λ υ -750. The thirteenth aspect of the present invention is directed to the light emitting diode of any of the first to the twelfth aspects, wherein when the first electrode is formed by bonding a line having a width of 15 or less, The distance D//m between the adjacent line and the main emission wavelength XDnm satisfies the relationship of 570 < λ 〇 < 635 and 0.4 〇 -20 0< D < 0.8 x Xd - 400. The light emitting diode of any of the first to the thirteenth aspects, further comprising a transparent conductive film formed to cover the first electrode and at least a portion of the light extraction surface. (5) (13) 1376039 The fifteenth aspect of the invention is directed to the light-emitting diode of the fourteenth aspect, wherein the transparent conductive film is formed of ITO. The sixteenth aspect of the invention is directed to the light emitting diode of any of the first to fifteenth aspects, wherein the light emitting portion comprises a GaP layer and the second electrode is formed over the GaP layer. The seventeenth aspect of the invention is directed to the light-emitting diode of any one of the first to the sixteenth aspects, wherein the first electrode has an n-type polarity and the second electrode has a Ρ-type polarity. The eighteenth aspect of the invention is directed to the light-emitting diode of any one of the first to the seventeenth aspects, wherein the composite semiconductor layer including the light-emitting portion is composed of (ΑΙχΟα^ΟγΙη, -γΡ ( 0SXS1, The nineteenth aspect of the invention is directed to the light-emitting diode of any one of the first to the eighteenth aspects, wherein the light-emitting portion comprises AlGalnP. The twentieth aspect of the invention The light-emitting diode of any one of the third to the nineteenth aspects, wherein the first side and the second side are formed by the slicing method. According to the present invention, the light-emitting portion of the self-LED can be improved. The efficiency of the light extraction, and thus the provision of a high-intensity light-emitting diode. The above and other objects, features and advantages of the present invention are apparent to those skilled in the art. [Embodiment] -8-(6) (6) 1376039 The best mode for carrying out the invention: The light-emitting portion of the present invention is a composite comprising a light-emitting layer and having a Ρ·η junction a semiconductor stack structure. The light-emitting layer may be composed of any composite semiconductor of the conductivity type (ie, η-type and ρ-type). The composite semiconductor is preferably by the general equation (into 1; (〇31.5()丫11114? (〇5 and $1, 〇£丫$1) is representative. Although the illuminating part can be any of the two different structures, single quantum well (SQW) and multiple quantum wells (MQW), in order to obtain better than monochromatic luminescence For this reason, it is suitable for selecting the MQW structure. The barrier layer constituting the quantum well (QW) and the (AlxGa, .x) Yln1.YP (0&0&;X<1 - 0<Y< 1) a composition such that a qubit that induces luminescence of a desired wavelength can be formed in the well layer. The illuminating portion includes the luminescent layer, and based on the initiation, radiation recombination can be induced and "fall" The object of the barrier that illuminates, comprising cladding layers respectively disposed on the opposite sides of the luminescent layer, opposite each other to form a so-called double heterogeneous (DH) structure. This is most advantageous for ensuring high density of the luminescence. The coating is more suitable for forming a semiconductor material having a wider forbidden band. The composite semiconductor which does not form the light-emitting layer and exhibits a high refractive index. Regarding the light-emitting layer which can emit yellow-green light having a wavelength of about 570 nm and formed by (AlojGao.do.sInG.sP), the coating layer is, for example, (Al〇 .7Ga〇.3) 〇.5In〇.5P composition formation (Y. Hosokawa et al., J. Crystal Growth, 221 (2000), 652-656). In the luminescent layer and each of the cladding layers An intermediate layer for appropriately modifying the band break may be interposed between the two layers. In this case, the intermediate layer is preferably formed on the light-emitting layer and the cladding with a semiconductor material having a medium forbidden band width. Between the layers. -9- (7) (7) 1376039 In order to improve brightness, heat radiation properties and mechanical strength, the present invention is expected to produce excellent in characteristic properties by connecting a transparent substrate to a light-emitting portion formed on a semiconductor substrate and containing a light-emitting layer. structure. The transparent substrate may be formed of a material such as a gallium phosphide (GaP) or a group III-V compound semiconductor crystal such as aluminum-gallium arsenide (AlGaAs), such as zinc sulfide (ZnS) or zinc selenide (ZnSe). Group compound semiconductor crystals, or Group IV semiconductor crystals such as hexagonal or cubic tantalum carbide (SiC). The transparent substrate preferably has a thickness of about 50; / m or more so that the light-emitting portion can be supported by sufficient mechanical force. It is also preferred to have a thickness of no more than about 300 ym so as to be easily subject to subsequent mechanical processing of the joint. In the composite semiconductor LED having a light-emitting layer formed of (AlxGa^OYlm.YP (0SXS1, 0SYS1), for example, it is most suitable for having the transparent substrate formed of an η-type GaP single crystal, and has about 50 // m or more and a thickness of about 300 / / m or less. Especially when the transparent substrate selects gallium phosphide (GaP ) as the light-emitting layer formed by (AlxGa^hlm-YP ( 05X51, 05YS1 )) When the emitted light is transmitted to the external material, the junction of the GaP surface having the same material quality is advantageous for obtaining a good junction condition, such as a high mechanical force and a constant thermal expansion coefficient. The present invention exhibits the greatest effect when the outer shape of the surface has the maximum width of 0.8 mm or more. The term "maximum width" refers to the longest portion of the outer shape of the surface. In a rectangular or square shape In this case, for example, the diagonal line constitutes the maximum width. This use of the structure is necessary for the illuminating two-10-(8)(8)1376039 polar body in accordance with the high current application required in recent years. When the size becomes larger, via the electrode The particular device configuration of the design of the machine proves that it is important to initiate a uniform flow of the current. The invention further requires that the second electrode formed at the location of the periphery be surrounded by the semiconductor layer. Forming a uniform distance from the semiconductor layer to the second electrode, allowing uniform flow of the current, and minimizing the area of the second electrode without increasing the impedance. Since the second electrode is formed in the light In the remaining region after layer removal, the minimization of the region causes an effect of exhibiting high brightness. In particular, the present invention preferably has a structure in which the light emitting portion includes a GaP layer, and the second electrode system is formed on On the GaP layer, by using the structure and because the GaP is a transparent material as a well, an ohmic electrode is formed, which exhibits a low contact resistance to the metal and induces an effect of the cutoff impedance. Preferably, the substrate is a mass that allows mass production and exhibits stable quality, and particularly preferably contains inexpensive GaP single crystals. Preferably, it has a (1 〇〇) plane or a (1 1 1 ) plane. It is particularly advantageous to use an n-type GaP single crystal having almost the (111) plane as the main surface. The η-type substrate is compared with The p-type substrate of the same impurity concentration has a high transfer factor, thus confirming that it is advantageous to exhibit high luminance. This is because the (111) plane has a characteristic property allowing simple irregular formation, and the light-emitting portion can be formed in the III- On the surface of the group V composite semiconductor single crystal substrate, for example, gallium arsenide (GaAs), indium phosphide (InP) (9) (9) 1376039, or gallium phosphide (GaP) or the germanium (Si) substrate. The illuminating portion is advantageously formed in the double heterogeneous (DH) structure, which can "fall" the illuminating of the barrier that is responsible for the radiation recombination. Next, the light-emitting layer is advantageously formed in the SQW structure or the multiple quantum well (MQW) structure in order to obtain excellent monochromatic light emission. Examples of the mechanism for forming the element layer of the light-emitting portion include the metal organic chemical vapor deposition (MOCVD) mechanism, the molecular beam epitaxy (MBE) mechanism, and the liquid phase epitaxy (LPE) mechanism. Between the substrate and the light-emitting portion, a buffer layer that satisfies the function of mitigating the grid error between the material of the substrate and the element layer of the light-emitting portion is inserted for reflecting the light emitted from the light-emitting layer The outer Bragg reflective layer to the device, the etched etch stop layer for the selected etch, and the like. Then, on the element layer of the light-emitting portion, a contact layer for reducing the impedance of the contact of the ohmic electrode, and a current diffusion layer for diffusing the working current of the device across the entire plane of the light-emitting portion may be disposed. A current inhibiting layer, a current compressing layer, or the like in the region that limits the operating current through the device. The invention is characterized by having a first electrode and a second electrode having a polarity different from that of the first electrode formed on the main light extraction surface of the light emitting diode. The term "main light-drawing surface" as used in the present invention means the surface of the light-emitting portion which is on the opposite surface side of the transparent substrate to be joined. In the present invention * by forming the electrode in the structure, the necessity of paying attention to the passing current of the transparent substrate can be eliminated. Thus, the material having a high transmission factor, such as an insulator and a high resistance -12-1376039 do), can be selected from a variety of materials, and the junction of the substrate having a high transmission factor initiates a high brightness display. The present invention also advantageously uses the transparent substrate between the sides thereof, a first side of the light-emitting surface that is adjacent to one side of the light-emitting layer, and a side of the light-emitting layer that is away from the side of the light-emitting layer. a second side that is inclined with the light emitting surface. The second side continues into the first side. The tilt is preferably directed to the inner side of the semiconductor layer. The reason why the present invention employs the structure includes that the light emitted from the luminescent layer toward the transparent substrate will be efficiently drawn to the outside. That is, a portion of the light emitted from the luminescent layer toward the transparent substrate is reflected on the first side and is drawn through the second side. The light reflected on the second side can be drawn through the first side. The synergistic effect of the first side and the second side increases the probability of the picking of the light. Preferably, the second electrode is formed at a position other than the position of the inclined structure of the second side surface (viewing the convex portion). The angle at which the second side is inclined is 10° or more and 20° or less. Preferably, the convex portion of the light emitting surface is examined, and a portion of the light emitting portion is formed over the second side. In the present invention, the formation of the second electrode ' at the position may exhibit high brightness and enhance the efficiency of light extraction through the inclined surface. In the present invention, the second electrode is preferably two or more. a line of equal length extending in parallel and having a point of end, wherein a dotted line connecting the end points of each side is arranged substantially parallel to the side of the wafer, and one or more lines are arbitrarily selected from the opposite portion of the parallel line One of the ends is connected to the near side of the adjacent straight line of the adjacent -13-(11) 1376039 (refer to Figs. 1, 6, and 9). By adopting this shape, the second electrode can be made to cover the I-light portion and minimize the area therein. This can handle larger wafers by lifting parallel lines. This benefit of connecting the end point of the parallel line minimizes this area of the electrode. Since the second electrode line is coupled to the required complementary portion, the line can be curved or curved to match the freedom of the complementary configuration. The enhancement of positioning the patch portion facilitates the fabrication of the wafer. In order to uniformly diffuse the current in the light-emitting portion, the second whisker is uniformly disposed with respect to the light-emitting portion. When the distance between the electrode and the farthest portion from the light-emitting portion is excessively large, the electricity is diffused throughout the light-emitting portion. Although the diffusion of the current does not ask the distance to be too small, the number (region) of the electrodes increases, the light extraction region increases, and the luminance decreases. The distance that allows the current to flow from the electrical varies with the wavelength of the illumination. The distance of diffusion of the flow in the luminescent layer of AlGalnP (the wavelength: greater than 570 nm and less than 635 nm) increases as the wavelength increases. Thus, the wavelength at which the distance between the farthest portions of the light-emitting portion of the electrode illuminates has the optimum range. Advantageously, the second electrode ' is formed in a structure such that the end of the first portion is represented by E ( //m) (the electrode is closest to the end of the portion of the light-emitting portion of the periphery of the device (the light-emitting portion is the most The distance between the portion close to the device, and the wavelength of light represented by λ〇(nm) satisfy the relationship, 〇.8>aD-350<E<1.6xXD-750' Figure 7 and The number of hairs, the line is extremely required to be placed in the portion of the free electrode, the flow of the electrode is not solved, but thus the pole diffuses the light, the electrode and the second electrode of the invention and the periphery mainly emit the light - This wavelength of 14-(12) (12) 1376039 is 5 70 < λ 〇 < 63 5. The above relationship is derived from a diffusion region that divides the current throughout the light-emitting portion, and as shown in FIG. 18, the wavelength assigned to the light-emitting axis of the horizontal axis and the second electrode assigned to the vertical axis The distance between the end and the end of the illuminating portion allows the left term to indicate the lower limit of the region, and wherein the right term represents the upper limit of the region and represents the increase with the wavelength of the illuminating This range of expansion of the above distance occurs. By adopting the above shape, it is possible to obtain the diffusion of the current throughout the entire light-emitting portion, suppress the increase of the region as the electrode of the well, avoid the reduction of the brightness by the reduction of the light-harvesting region, and achieve high brightness. Show. Further, it satisfies the above-described condition that the second electrode should be disposed at a position other than the upper end of the inclined side surface. The first electrode likewise has this optimum range of the current diffusion distance relative to the wavelength of the illumination. The present invention advantageously forms a structure such that the first electrode is formed via a line of composite widths of 15#m or less, and the distance between the adjacent lines is represented by D(/m) and the primary In the case where the emission wavelength is expressed by λ0 (ηπι), as shown in Fig. 19, the relationship of 5 70 < XD < 63 5 and 0.4xXD - 200 < D < 0.8 > aD - 400 is satisfied. The above relationship represents the area which allows the current in the light-emitting portion to be uniformly diffused. This portion does not allow diffusion of the current when the interval of the first electrode is too wide. When the interval is too narrow, the area of the electrode is required to increase. By taking this structure to obtain the diffusion of the current throughout the light-emitting portion, the increase of the region of the electrode is suppressed, the reduction of the luminance is prevented by the reduction of the light-collecting region, and the display of high luminance is realized. -15- (13) (13) 1376039 The present invention advantageously allows the angle between the second side and the first side to fall between 1 〇 and 2 。. The range. By adopting this structure, efficient extraction of light reflected from the bottom portion of the transparent substrate to the outside is enabled. Next, the present invention advantageously causes the width (direction of thickness) of the first side to fall within the range of 30//m to 100; zm. By having the width of the first side falling within the range, the light reflected by the bottom portion of the transparent substrate can be effectively returned to the light emitting surface at the portion of the first side and further emitted through the main The light is extracted from the surface, and as a result, the luminous efficiency of the light-emitting diode is successfully obtained. The present invention preferably forms the light-emitting portion ' in a structure including a GaP layer and allows the second electrode to be formed on the GaP layer. This use of the structure results in an effect of lowering the operating voltage. Since the second electrode is formed on the GaP layer, a good ohmic junction is obtained and the operating voltage is lowered. The present invention preferably forms the first electrode of the n-type polarity and the second electrode of the p-type polarity. This adoption of the structure results in an effect of exhibiting high brightness. This formation of the first electrode of the Ρ-type causes the diffusion of current to deteriorate due to high electrical resistance and causes a decrease in the luminance. This formation of the first electrode of the n-type causes the diffusion of the current to be boosted and a high brightness display is obtained. The present invention advantageously thickens the inclined surface of the transparent substrate. The result of the use of the structure obtains the effect of enhancing the efficiency of the light picking through the inclined surface. By thickening the inclined surface, it is possible to suppress the tilting of the inclined -16 - (14) (14) 1376039 on the surface. Total reflection and increase the efficiency of light extraction. The surface may be thickened by engraving the chemical uranium comprising a mixture of phosphoric acid, hydrogen peroxide and water + hydrochloric acid. Next, the present invention advantageously forms an irregularity having a height difference of the range of Ο.Ι/im to 10#m on the bottom surface of the transparent substrate. This use of the structure initiates the effect of diffusing and efficiently drawing the reflected light into the wafer to the outside of the wafer. The invention advantageously forms the second side via the sectioning method. This adoption of the manufacturing method results in an effect of increasing the yield. Although the formation of the second side can be achieved by a combination of several methods, such as dry etching, wet etching, a scriber method, and a laser processing method, the slicing method is confirmed by its ability to control shape and excellent yield. For the best. The invention advantageously forms the first side via the sectioning method. This adoption of the manufacturing method enables the production cost to be reduced. In particular, since the manufacturing method does not require a cutting boundary at the time of dividing the wafer, a large number of light-emitting diodes can be produced and thus the production cost can be reduced. This result of the manufacturing method enhances the efficiency of light extraction through the first side and completes the display of high brightness. The present invention advantageously forms the light emitting diode in a structure such that the region of the light emitting layer, the region of the first electrode, and the surface of the second electrode, respectively, represented by 3/^, 81, and S2, In the case where the outer shape of the light-emitting surface of the light-emitting diode has a region of 100%, the relationship of 80% < SA < 90%, and 5% < S2 < 10% is satisfied. Since the small electrode area can satisfy the light emission from a large area of light emission, the shape of the -17-(15) 1376039 ^ exhibits a high brightness display. The present invention advantageously has the transparent conductive film formed to cover the first electrode and a portion of the light extraction surface. This use of the shape initiates the transparent electrically conductive film to facilitate diffusion of the current, allowing the fabrication of low operating voltage LED wafers. The present invention further advantageously forms the transparent electrically conductive film from ITO. The ITO exhibits low impedance and has a high transmission factor, which causes the operation voltage to be reduced without interference from light extraction. Example 1: Example 1 provides a specific illustration of an example of making a light-emitting diode as contemplated by the present invention. 1 and 2 depict the semiconductor light-emitting diode 制造 fabricated in Example 1: FIG. 1 is a plan view' and FIG. 2 is a cross-sectional view taken along line ΙΙ-ΙΙ of FIG. Fig. 3 is a cross-sectional view showing a semiconductor epitaxial wafer for the semiconductor light emitting diode. • The semiconductor light-emitting diode 10 manufactured in Example 1 is

AlGalnP發光部分的紅色發光二極體（LED)。 範例1藉表達連接GaP基底至置於GaAs基底上之外 延堆疊結構（外延晶圓）而製造該發光二極體的範例具體 說明本發明。 該LED10係使用具相繼堆疊於以擁有自（100)面傾 斜15°表面之摻矽η-型Ga As單晶所形成半導體基底11上 半導體層13之外延晶圓而製造。該堆疊半導體層爲以 GaAs 形成的摻矽 η-型緩衝器層 130 、 以 -18- (16) 1376039 (Alo.sGao.Oo.sInG 5p形成的摻矽 η·型接點層 131、以 (AlojGatKOo.sInasP形成的摻矽η-型低包覆層132、以20 對（Al〇.2Ga〇.8)〇.5In〇.5P 及（Al〇.7Ga〇.：})o.5ln〇.5P 形成的未摻 雜發光層133'以（人1〇.7〇3().3)().5111().5?形成的摻鎂？-型高 包覆層134及摻鎂P-型GaP層135。 . 在範例1中，該元件半導體層130至135係使用三甲 基鋁（（CH3)3A1)、三甲基鎵（（CH3)3Ga)及三甲基銦（ # (CH3)3In)做爲III族元件的該列材料，藉該低壓金屬有 機化學蒸汽沈積法（MOCVD法）而堆疊於該GaAs基底 11上，結果形成一外延晶圓。雙-環戊二烯鎂（bis-(C5H5)2Mg )係做爲摻鎂的該列材料。乙矽烷（Si2H6 )係 做爲摻矽的該列材料。接著，磷化氫（PH3 )或砷化三氫 Μ (AsH3 )係做爲V族元件的該列材料。該GaP層135係 • 於75 0°C下生成，其他元件半導體層130至134則於730 °C下形成該半導體層13。 # 該GaAs緩衝器層130具有2x10〃 cm_3的障礙濃度及 0.2#m的層厚度》該接點層係以（AU.sGao.sh.sIiio.sP形成 並具有2xl018 cm·3的障礙濃度及1.5#m的層厚度。該n-包覆層132具有8xl0l7cm_3的障礙濃度及1/zm的層厚度 。該發光層133爲具有0.8//m之層厚度的未摻雜層。該 p-包覆層134具有2xl017 cm·3的障礙濃度及的層厚 度。該GaP層135具有3X1018 cnT3的障礙濃度及9// m 的層厚度。 自該第一表面達深度之該P-型GaP層135的該 -19- (17) (17)1376039 區域經鏡面拋光而呈圓滑。經該鏡面拋光，該P-型Gap 層135的該表面呈現0.18nm的粗糙。同時，準備將應用 於該P-型GaP層135之鏡面拋光的該表面的η-型GaP基 底14。對於準備應用的該GaP基底14,添加矽直至2x 1017 cnT3的障礙濃度。使用具有（111)之表面傾向性的 單晶。等候應用的該GaP基底14具有50mm及250 // m 的厚度。在連接該P-型GaP層135之前，該GaP基底14 具有鏡面拋光爲0.1 2nm均方根値的該表面。 該GaP基底14及外延晶圓形成一處理裝置，且該裝 置的該內部排氣成真空。之後，該GaP基底14及該外延 晶圓的該表面爲剝離玷污的該表面而以加速氬光束輻照。 之後，該二元件於室溫結合。 接著，該GaAs基底11及該Ga As緩衝器層130選擇 地以氨基蝕刻劑而自該結合晶圓移除。 在該接點層131的該第一表面上，藉該真空蒸汽法， AuGe(Ge的質量比：12%)沈積爲的厚度，Ni 爲0.05//m的厚度及Au爲l//m的厚度，以形成η-型歐 姆電極15。該電極經由依據光刻的該普通機構而拋光定 型。該η-型歐姆電極係以10/zm寬度及60//m間隔的該 柵格形狀形成（圖1 )。 其次，該GaP層1 35於形成該p-電極的該區域中經 由選擇地移除該外延層131至134的該部分而暴露。在該 GaP層的該表面上，藉該真空蒸汽法沈積0.2//m厚度的 AuBe及1"111厚度的八11，以形成？-型歐姆電極16。該？- -20- (18) (18)1376039 型歐姆電極16以各包含具有25/zm寬度之三側方形的二 堆疊層的該形狀形成（圖1)。此時，自該發光部分之該 末端至該P-型歐姆電極之該末端的該距離爲130//m。之 後，該組合連接層爲易鑄成合金之故以4 50 °C進行熱處理 達10分鐘，結果形成具低阻抗的P-型及η-型歐姆電極。 之後，經由該真空蒸汽法的該使用，於該η-型歐姆 電極的部分上沈積Au直至l//rn厚度，以形成連結塡補 。此外，該半導體層以沈積直至〇.3/zm的Si02膜包覆， 並做爲保護膜。 其次，一 V形槽藉使用切片鋸而自該背部表面插入 該GaP基底14，以提供15°角度的傾斜表面（圖2中以編 號20表示），並提供180//m長度的第二側面22。之後 ，該發光二極體的該第一表面係由一抗蝕劑保護，且該 GaP基底14的背部表面23經磷酸、過氧化氫及水 +鹽 酸的混合溶液蝕刻而變粗。該GaP基底14的該背部表面 具有500nm的均方根値（rms)。 其次，該晶圓以切片鋸自該第一表面側切割爲1mm 間隔的晶片。該第一側面21具有80 /z m長度並大體上垂 直於該發光層配置。 該破碎層經切片而移除，且該玷污經硫酸及過氧化氫 之混合液體蝕刻而移除，結果製造該半導體發光二極體（ 晶片）1 0。 基於上述製造的該LED晶片1〇，如圖4及圖5中系 統描述地組裝發光二極體燈42。該LED燈42的製造係經 (19) (19)1376039 架設以銀（Ag)膠固定於底座基底45的該LED晶片、以 金製線路46線路連接具安裝於該底座基底45之該第一表 面上η-電極端子43之該LED晶片10的該η·型歐姆電極 15與具ρ-電極端子44的該ρ-型歐姆電極16、及接著以 普通環氧樹脂41密封連接角落。 當電流經由置於該底座基底45之該第一表面上該η· 電極端子43及該ρ·電極端子44而通過該η-型及ρ-型歐 姆電極15及16之間時，便發射具6 2 Onm主要波長的紅 色光。400mA的電流通過時該前進方向的該前進電壓（ Vf)達2.3 V，其係反映該歐姆電極15及16之該良好歐 姆屬性的量。當該前進電流設定爲400mA時該發光的該 強度達4000 mcd的高度亮度，其係反映高效率發光之該 發光部分的該結構的量，且事實上藉由於該晶圓分割爲晶 片時移除該破碎層可提昇汲取至該外部的該效率。 相對範例1 : 範例1使晶片側面包含幾乎垂直於該發光層之該發光 表面的第一側面，及傾斜於該發光表面的第二側面。相對 範例1改變侧面形狀，並使晶片側面僅包含幾乎垂直於該 發光表面的第一側面。相對範例1具有與範例1的該相同 處理，直至該P·型及η-型歐姆電極的該形成，及以切片 鋸自該第一表面側以1 mm間隔切割該晶圓，以便在不以 切片鋸自該背部表面側將V形槽插入該GaP基底下製造 晶片，並經蝕刻所製造該晶片側面使該面變粗而幾乎垂直 -22- (20) 1376039 於該發光層地配置。其次，該晶片係經由移除所形成之該 破碎層及該玷污，並以硫酸及過氧化氫之混合液體蝕刻該 切片而完成。當以範例1中該相同方式評鑑該晶片時，發 現光汲取通過該晶片側面的該效率下降，且發光的該強度 僅 2500 mcd 。 範例2 : # 以範例1的該程序同時改變P-型歐姆電極的該形狀 而製造一發光二極體。該相關形狀如圖6中所示。因而所 獲得的該發光二極體具有如範例1之該產品的低阻抗及高 亮度的優點，儘管該P-型歐姆電極之方形的三側中該字 母的一側如圖6中所示彼此相反。除此改變外，該P·型 m 歐姆電極可擁有許多不同形狀及樣式。經由提昇方形之三 * 側的該字母的該數量可進一步增加該LED晶片的該尺寸 (圖 7)。 • 相對範例2 : 當除了 P-型歐姆電極係置於該發光部分之該末端的 該鄰近位置上外，依循範例1的該程序時（圖8)，光汲 取的該效率由於該發光部分未出現於該GaP基底的該傾 斜的表面上而降低。當以範例1中該相同方法評鑑該產品 時，發光的該強度僅爲3 5 00 mcd。經由具有置於該中心 之該鄰近位置上的該P-型歐姆電極，便可提昇光汲取的 該效率。 -23- (21) (21)1376039 範例3 : 以範例1的該程序製造發光二極體，同時以圖9至圖 15中所描繪該形狀形成P-型歐姆電極及n_型歐姆電極。 該些產品擁有如範例1之該產品的低阻抗及高亮度。 範例4 : 在範例4中，安裝於其中具有透明電傳導膜的發光二 極體晶片係藉使用範例1中該相同基底及外延晶圓而予製 造。圖16及圖17描繪範例4中所製造該半導體發光二極 體，圖16爲平面圖且圖17爲跨越圖16沿線XVII-XVn 之截面圖。在接點層的該表面上，藉該真空蒸汽法， AuGe(Ge的質量比：12%)沈積爲0.15/zm的厚度及Ni 爲0.05/zm的厚度，以形成η -型歐姆電極。經由使用光 刻的該普通機構定型該組合的堆疊層，結果形成具有30 /zm直徑的圓形電極。該最鄰近η-型歐姆電極之間的該中 央距離設定爲〇.25mm。之後，以450°C進行熱處理達10 分鐘以形成P-型歐姆電極並鑄成合金。 其次，以銦錫氧化物（ITO )形成的透明電傳導膜覆 蓋該高包覆層的該發光表面，且該η-型歐姆電極藉普通 磁電管噴濺法而沈積300nm的厚度。該透明電傳導膜具 有2xl(T4ncm的特定阻抗，並顯示針對發光之該波長的 該光之94%的傳輸因子。 其次，連結塡補藉該真空蒸汽法沈積厚度的Au -24- (22) 1376039 而形成於該透明電傳導膜的部分上》此外，該 沈積至0.3// m的Si02膜包覆，並做爲保護膜 範例1的該程序而獲得一發光二極體晶片。 當以範例1中該相同方式評鑑該發光二極 發現由於該透明電傳導膜展現均勻擴散電流之 上無漏失之發光的該波長的光汲取效果，而擁 之該產品的低阻抗及高亮度的該相同優點。 半導體層以 。之後，藉 體晶片時， 效果及實際 有如範例1A red light emitting diode (LED) of the AlGalnP light emitting portion. Example 1 The present invention is specifically described by way of an example in which a GaP substrate is attached to a GaAs substrate and a stacked structure (epitaxial wafer) is fabricated to form the light-emitting diode. The LED 10 is fabricated by using a semiconductor wafer 13 which is successively stacked on a semiconductor substrate 11 formed of an ytterbium-doped n-type Ga As single crystal having a surface tilted by 15° from a (100) plane. The stacked semiconductor layer is an erbium-doped n-type buffer layer 130 formed of GaAs, and an erbium-doped n-type contact layer 131 formed of -18-(16) 1376039 (Alo.sGao.Oo.sInG 5p) AlojGatKOo.sInasP forms an antimony-doped n-type low cladding layer 132, with 20 pairs (Al〇.2Ga〇.8)〇.5In〇.5P and (Al〇.7Ga〇.:})o.5ln〇. The undoped luminescent layer 133' formed by 5P is a magnesium-doped-type high cladding layer 134 and a magnesium-doped P- formed by (human 〇.7〇3().3)().5111().5? Type GaP layer 135. In Example 1, the element semiconductor layers 130 to 135 are made of trimethylaluminum ((CH3)3A1), trimethylgallium ((CH3)3Ga), and trimethylindium (# (CH3) 3In) The column material of the group III device is stacked on the GaAs substrate 11 by the low pressure metal organic chemical vapor deposition method (MOCVD method) to form an epitaxial wafer. Bis-cyclopentadienyl magnesium ( Bis-(C5H5)2Mg is used as the material of magnesium doping. Ethane (Si2H6) is used as the material of erbium doped. Next, phosphine (PH3) or arsenic trioxide (AsH3) This column material is used as a group V component. The GaP layer 135 is generated at 75 °C, and other components are half. The conductor layers 130 to 134 form the semiconductor layer 13 at 730 ° C. # The GaAs buffer layer 130 has a barrier concentration of 2 x 10 〃 cm_3 and a layer thickness of 0.2 #m. The contact layer is (AU.sGao. sh.sIiio.sP is formed and has a barrier concentration of 2xl018 cm·3 and a layer thickness of 1.5#m. The n-cladding layer 132 has a barrier concentration of 8x1017 cm_3 and a layer thickness of 1/zm. The light-emitting layer 133 has 0.8. An undoped layer of layer thickness of //m. The p-cladding layer 134 has a barrier concentration of 2 x 1017 cm·3 and a layer thickness. The GaP layer 135 has a barrier concentration of 3×10 18 cnT3 and a layer thickness of 9//m. The -19-(17)(17)1376039 region of the P-type GaP layer 135 having a depth from the first surface is mirror-polished to be smooth. The mirror-polished, the P-type Gap layer 135 The surface exhibits a roughness of 0.18 nm. At the same time, an n-type GaP substrate 14 to be applied to the surface of the mirror-polished of the P-type GaP layer 135 is prepared. For the GaP substrate 14 to be applied, 矽 is added up to 2x 1017 cnT3 Barrier concentration. A single crystal having a surface orientation of (111) was used. The GaP substrate 14 awaiting application has a thickness of 50 mm and 250 // m. Prior to joining the P-type GaP layer 135, the GaP substrate 14 has a surface that is mirror polished to a 0.1 2 nm root mean square. The GaP substrate 14 and the epitaxial wafer form a processing device, and the internal exhaust of the device is evacuated. Thereafter, the GaP substrate 14 and the surface of the epitaxial wafer are stripped of the stained surface to accelerate the argon beam irradiation. Thereafter, the two elements are combined at room temperature. Next, the GaAs substrate 11 and the Ga As buffer layer 130 are selectively removed from the bonded wafer with an amino etchant. On the first surface of the contact layer 131, by the vacuum vapor method, AuGe (mass ratio of Ge: 12%) is deposited to have a thickness of Ni of 0.05//m and an Au of l//m. The thickness is to form an n-type ohmic electrode 15. The electrode is polished and shaped via the conventional mechanism in accordance with photolithography. The n-type ohmic electrode was formed in the shape of a grid having a width of 10/zm and a spacing of 60/m (Fig. 1). Next, the GaP layer 135 is exposed in the region where the p-electrode is formed by selectively removing the portion of the epitaxial layers 131 to 134. On the surface of the GaP layer, AuBe of a thickness of 0.2//m and eight 11 of a thickness of 1 " 111 are deposited by the vacuum vapor method to form? - Type ohmic electrode 16. What? - -20- (18) The (18) 1376039 type ohmic electrode 16 is formed in such a shape as to include two stacked layers having a three-sided square having a width of 25/zm (Fig. 1). At this time, the distance from the end of the light-emitting portion to the end of the P-type ohmic electrode was 130 / / m. Thereafter, the combined connecting layer was heat-treated at 4 50 ° C for 10 minutes to form an alloy, and as a result, P-type and η-type ohmic electrodes having low impedance were formed. Thereafter, via the use of the vacuum vapor method, Au is deposited on the portion of the n-type ohmic electrode up to a thickness of l//rn to form a joint compensation. Further, the semiconductor layer was coated with a SiO 2 film deposited up to 〇3/zm and used as a protective film. Next, a V-groove is inserted into the GaP substrate 14 from the back surface by using a dicing saw to provide an inclined surface at 15[deg.] (indicated by numeral 20 in Figure 2) and provides a second side of 180//m length. twenty two. Thereafter, the first surface of the light-emitting diode is protected by a resist, and the back surface 23 of the GaP substrate 14 is etched by a mixed solution of phosphoric acid, hydrogen peroxide and water + hydrochloric acid to become thick. The back surface of the GaP substrate 14 has a root mean square enthalpy (rms) of 500 nm. Next, the wafer was cut into wafers of 1 mm intervals from the first surface side by a dicing saw. The first side 21 has a length of 80 / z m and is generally perpendicular to the luminescent layer configuration. The fracture layer was removed by slicing, and the stain was removed by etching with a mixed liquid of sulfuric acid and hydrogen peroxide, and as a result, the semiconductor light-emitting diode (wafer) 10 was fabricated. Based on the LED wafer 1 manufactured as described above, the light-emitting diode lamp 42 is assembled as described in the system of Figs. 4 and 5. The LED lamp 42 is manufactured by the (19) (19) 1376039 erected with the silver (Ag) glue fixed to the base substrate 45 of the LED chip, and the first line of the gold line 46 is connected to the base substrate 45. The n-type ohmic electrode 15 of the LED wafer 10 on the surface of the n-electrode terminal 43 and the p-type ohmic electrode 16 having the p-electrode terminal 44, and then sealed by a common epoxy resin 41 are connected to the corners. When the current passes between the n-type and p-type ohmic electrodes 15 and 16 via the n-electrode terminal 43 and the p-electrode terminal 44 disposed on the first surface of the base substrate 45, the emitter is emitted 6 2 Onm red light of the main wavelength. The forward voltage (Vf) in the forward direction when the current of 400 mA passes is 2.3 V, which reflects the amount of the good ohm property of the ohmic electrodes 15 and 16. When the forward current is set to 400 mA, the intensity of the light emission reaches a high brightness of 4000 mcd, which reflects the amount of the structure of the light-emitting portion of the high-efficiency light-emitting portion, and is actually removed by the wafer being divided into wafers. The fracture layer enhances the efficiency of drawing to the exterior. Relative Example 1: Example 1 includes a side of the wafer comprising a first side that is substantially perpendicular to the light emitting surface of the light emitting layer, and a second side that is oblique to the light emitting surface. The side shape was changed with respect to Example 1, and the side of the wafer contained only the first side which was almost perpendicular to the light emitting surface. The first example has the same process as the example 1 until the formation of the P·type and n-type ohmic electrodes, and the dicing saw cuts the wafer at intervals of 1 mm from the first surface side so as not to The dicing saw inserts a V-groove from the surface of the back surface into the GaP substrate to fabricate the wafer, and etches the side surface of the wafer to make the surface thicker and almost vertically -22-(20) 1376039 disposed on the luminescent layer. Next, the wafer is completed by removing the formed fracture layer and the stain, and etching the slice with a mixed liquid of sulfuric acid and hydrogen peroxide. When the wafer was evaluated in the same manner as in Example 1, it was found that the efficiency of light extraction through the side of the wafer was lowered, and the intensity of the light emission was only 2500 mcd. Example 2: # A light-emitting diode was fabricated by simultaneously changing the shape of the P-type ohmic electrode by the procedure of Example 1. This related shape is as shown in FIG. 6. The obtained light-emitting diode thus has the advantages of low impedance and high brightness of the product of Example 1, although the side of the letter in the three sides of the square of the P-type ohmic electrode is as shown in FIG. 6 in contrast. In addition to this change, the P-type m ohmic electrode can have many different shapes and styles. This size of the LED wafer can be further increased by increasing the number of the letters on the side of the three sides of the square (Fig. 7). • Relative Example 2: When the procedure of Example 1 is followed (Fig. 8) except that the P-type ohmic electrode is placed at the end of the end of the light-emitting portion, the efficiency of the light extraction is not due to the light-emitting portion. It appears on the inclined surface of the GaP substrate and is lowered. When the product was evaluated in the same manner as in Example 1, the intensity of the luminescence was only 3 5 00 mcd. This efficiency of light extraction can be enhanced by having the P-type ohmic electrode placed in the adjacent position of the center. -23- (21) (21) 1376039 Example 3: A light-emitting diode was fabricated by the procedure of Example 1, while forming a P-type ohmic electrode and an n-type ohmic electrode in the shape depicted in Figs. 9 to 15 . These products have the low impedance and high brightness of the product of Example 1. Example 4: In Example 4, a light-emitting diode chip mounted with a transparent conductive film therein was fabricated by using the same substrate and epitaxial wafer in Example 1. 16 and 17 depict the semiconductor light emitting diode fabricated in Example 4, Fig. 16 is a plan view and Fig. 17 is a cross-sectional view taken along line XVII-XVn of Fig. 16. On the surface of the contact layer, by the vacuum vapor method, AuGe (mass ratio of Ge: 12%) was deposited to a thickness of 0.15 / zm and a thickness of Ni of 0.05 / zm to form an ?-type ohmic electrode. The combined stacked layers were shaped via the conventional mechanism using lithography, resulting in a circular electrode having a diameter of 30 / zm. The center distance between the nearest neighboring n-type ohmic electrodes is set to 〇.25 mm. Thereafter, heat treatment was performed at 450 ° C for 10 minutes to form a P-type ohmic electrode and cast into an alloy. Next, a transparent electric conductive film formed of indium tin oxide (ITO) covers the light-emitting surface of the high cladding layer, and the n-type ohmic electrode is deposited to a thickness of 300 nm by a common magnetron sputtering method. The transparent electrically conductive film has a specific impedance of 2xl (T4ncm and shows a transmission factor of 94% of the light for the wavelength of the luminescence. Secondly, the connection is supplemented by the vacuum vapor deposition method of Au-24- (22) 1376039 is formed on the portion of the transparent electrically conductive film. Further, the SiO 2 film deposited to 0.3//m is coated, and a light-emitting diode wafer is obtained as the procedure of the protective film example 1. In the same manner, in the same manner, the light-emitting diode is found to have the same effect of the low-impedance and high-brightness of the product because the transparent conductive film exhibits a light-draw effect of the light having no leakage above the uniform diffusion current. Advantages. After the semiconductor layer is used, the effect and actuality are as in the example 1

產業適用性： 由於電極之該配置及晶片之該形狀的該最 明可提供具有大尺寸、顯露空前的高亮度及低 確保高可靠性及允許各式顯示燈效用的發光二 【圖式簡單說明】 圖1爲依據本發明相關範例1之半導體發 平面圖。 圖2爲跨越圖丨沿線η_Π之該半導體發 截面圖。 圖3爲依據本發明之範例1及相對範例1 的截面圖。 圖4爲本發明之範例1及相對範例1之半 的平面圖。 圖5爲圖4之該半導體發光二極體燈的截 圖6爲依據本發明相關範例2之半導體發 佳化，本發 作業電壓、 極體。 光二極體的 光二極體的 之外延晶圓 導體發光燈 面圖。 光二極體的 -25- (23) 1376039 平面圖。 圖7爲依據本發明相關範例2之另一半導體發光二極 體的平面圖。 圖8爲依據相對範例2之半導體發光二極體的平面圖 圖9爲依據本發明範例3之半導體發光二極體的平面 圖。Industrial Applicability: Due to the configuration of the electrode and the shape of the wafer, the brightest can provide a large size, revealing unprecedented high brightness and low reliability to ensure high efficiency and allow various types of display lamps to be used. 1 is a plan view of a semiconductor wafer according to a related example 1 of the present invention. Figure 2 is a cross-sectional view of the semiconductor taken along the line η_Π. Figure 3 is a cross-sectional view of Example 1 and Comparative Example 1 in accordance with the present invention. Fig. 4 is a plan view showing an example 1 of the present invention and a half of the comparative example 1. Fig. 5 is a sectional view of the semiconductor light emitting diode lamp of Fig. 4. Fig. 6 is a view showing the semiconductor device according to the second embodiment of the present invention, the operating voltage and the polar body. An epitaxial wafer of a photodiode of a photodiode. Planar view of the light diode -25- (23) 1376039. Figure 7 is a plan view showing another semiconductor light emitting diode according to Related Example 2 of the present invention. Figure 8 is a plan view of a semiconductor light-emitting diode according to Comparative Example 2. Figure 9 is a plan view of a semiconductor light-emitting diode according to Example 3 of the present invention.

圖10爲依據本發明範例3之另一半導體發光二極體 的平面圖。 圖11爲依據本發明範例3之又另一半導體發光二極 體的平面圖。 圖12爲依據本發明範例3之又另一半導體發光二極 體的平面圖。 圖13爲依據本發明範例3之進一步半導體發光二極 體的平面圖。 圖14爲依據本發明相關範例3之進一步半導體發光 二極體的平面圖。 圖15爲依據本發明相關範例3之進一步半導體發光 二極體的平面圖。 圖16爲依據本發明相關範例4之半導體發光二極體 的平面圖。 圖17爲跨越圖16沿線XVII-XVII之該半導體發光二 極體的截面圖。 圖18顯示光發射之該波長（nm)與自該電極所發光 -26- (24) 1376039 之該距離E(/zm)之間的該關係。 圖19顯示該第一電極之該間隔D( //m)與光發射之 ' 該波長（nm)之間的該關係。 ' 【主要元件符號說明】 . 10:半導體發光二極體 11 :半導體基底 φ 13 :半導體層 1 4 : η-型GaP基底 1 5 : η-型歐姆電極 1 6 : ρ-型歐姆電極 2 1 :第一側面 * 22 :第二側面 ' 2 3 :背部表面 41 :普通環氧樹脂 • 42 :發光二極體燈 43 : η-電極端子 44 : ρ-電極端子 45 :底座基底 46 :金製線路 130 :摻矽η-型緩衝器層 1 3 1 :慘砂η -型接點層 132:摻矽η -型低包覆層 1 3 3 :未摻雜發光層 -27- (25)1376039 134 :摻鎂p-型高包覆層 1 35 :摻鎂p-型GaP層Figure 10 is a plan view showing another semiconductor light emitting diode according to Example 3 of the present invention. Figure 11 is a plan view showing still another semiconductor light emitting diode according to Example 3 of the present invention. Figure 12 is a plan view showing still another semiconductor light emitting diode according to Example 3 of the present invention. Figure 13 is a plan view showing a further semiconductor light emitting diode according to Example 3 of the present invention. Figure 14 is a plan view showing a further semiconductor light emitting diode according to Related Example 3 of the present invention. Figure 15 is a plan view showing a further semiconductor light emitting diode according to Related Example 3 of the present invention. Figure 16 is a plan view showing a semiconductor light emitting diode according to a related example 4 of the present invention. Figure 17 is a cross-sectional view of the semiconductor light emitting diode taken along line XVII-XVII of Figure 16. Figure 18 shows the relationship between the wavelength (nm) of light emission and the distance E (/zm) from the light -26-(24) 1376039 of the electrode. Figure 19 shows the relationship between the interval D ( //m) of the first electrode and the wavelength (nm) of light emission. ' [Main component symbol description] . 10: Semiconductor light-emitting diode 11 : Semiconductor substrate φ 13 : Semiconductor layer 1 4 : η-type GaP substrate 1 5 : η-type ohmic electrode 1 6 : ρ-type ohmic electrode 2 1 : First side * 22 : Second side ' 2 3 : Back surface 41 : Normal epoxy resin 42 : Light-emitting diode lamp 43 : η - Electrode terminal 44 : ρ - Electrode terminal 45 : Base base 46 : Gold Line 130: Erbium-doped n-type buffer layer 1 3 1 : Worry η-type contact layer 132: Erbium-doped n-type low cladding layer 1 3 3 : Undoped light-emitting layer -27-(25)1376039 134: magnesium-doped p-type high cladding layer 1 35 : magnesium-doped p-type GaP layer

-28--28-

Claims (1)

1376039 _—_ ‘ μ年s月/δ日修(歲)正本 第096105560號專利申請案中文申請專利範圍修正本 民國101年8月10日修正 十、申請專利範圍 1.—種發光二極體，其具有主要光汲取表面並包含 一包括半導體層的複合半導體層； 該複合半導體層所包含的一發光部分； . 該發光部分中所包含的一發光層； 一連結該複合半導體層的透明基底；及 形成於該透明基底相對側上之該主要光汲取表面上具 相反極性的第一及第二電極； 其中該第二電極係形成於藉移除該半導體層而暴露之 該複合半導體層之一部分的位置上，並具有以該半導體層 圍住的周圍；及 其中該主要光汲取表面具有具〇.8mm或更多之最大寬 度的外部形狀：及 其中該透明基底包含幾乎垂直並落於該發光部分之一 側的第一側面，及接續該第一側面並具有形成於遠離該發 光層之一側上之傾斜面的第二側面。 2. 如申請專利範圍第1項之發光二極體，其中該透 明基底爲能被自該發光部分發射之光穿透的基底。 3. 如申請專利範圍第1項之發光二極體，·其中該第 一側面及該第二側面係經由切片方法而形成.。 4.如申請專利範圍第1項之發光.二極體，其中該第 1376039 二側面的該傾斜面具有1 〇。或更多並小於20°的傾斜角’且 其中該發光部分當看似凸出發光表面上時’具有形成於該 第二側面之上的部分。 5. 如申請專利範圍第1項之發光二極體’其中該透 明基底具有一底表面，其上形成具Ο.1&quot;111至iOem範圍 之高度差異的不平整。 6. 如申請專利範圍第1項之發光二極體，其中該透 明基底係由GaP形成。 7. 如申請專利範圍第6項之發光二極體’其中該透 明基底係由η-型GaP形成，並具有粗糙（1H)面做爲其 主要表面。 8. 如申請專利範圍第1項之發光二極體，其中該透 明基底具有50至300&quot;m範圍的厚度。 9. 如申請專利範圍第1項之發光二極體，其中該發 光層、第一電極及第二電極各具有區域SA、S,&amp; S2，在 該發光二極體具有具100%區域之外部形狀的發光表面的 狀況下，滿足 80%&lt;Sa&lt;90%、10%&lt;S丨&lt;20% 及 5%&lt;S2&lt;10 %的關係。 10. 如申請專利範圍第1項之發光二極體，其中該第 二電極係由二或更多相等長度相互地平行延伸並具在其相 對側上之末端點的直線組成，其中連接每一側之該末端點 的虛線與該發光二極體的側面幾乎平行的配置，且一或多 條線於任意選擇之該平行直線的該相對部分之一連接兩鄰 近平行直線之較近側上的該末端點。1376039 ___ ' μ s month / δ day repair (years) original 096105560 patent application Chinese patent application scope amendments of the Republic of China on August 10, 101 amendments ten, the scope of application for patents - a kind of light-emitting diode And having a main light extraction surface and comprising a composite semiconductor layer including a semiconductor layer; a light emitting portion included in the composite semiconductor layer; a light emitting layer included in the light emitting portion; and a transparent substrate connecting the composite semiconductor layer And first and second electrodes having opposite polarities on the main light extraction surface formed on opposite sides of the transparent substrate; wherein the second electrode is formed on the composite semiconductor layer exposed by removing the semiconductor layer a portion of the position and having a periphery surrounded by the semiconductor layer; and wherein the main light extraction surface has an outer shape having a maximum width of 〇8 mm or more: and wherein the transparent substrate comprises an almost vertical and falls thereon a first side of one side of the light emitting portion, and a second surface connecting the first side and having an inclined surface formed on a side away from the side of the light emitting layer Surface. 2. The light-emitting diode of claim 1, wherein the transparent substrate is a substrate that can be penetrated by light emitted from the light-emitting portion. 3. The light-emitting diode of claim 1, wherein the first side and the second side are formed by a slicing method. 4. The illuminating diode of claim 1, wherein the inclined surface of the second side of the 1376039 has 1 〇. Or more and less than 20° of the tilt angle ' and wherein the light-emitting portion has a portion formed on the second side when it appears to protrude from the light-emitting surface. 5. The light-emitting diode of claim 1, wherein the transparent substrate has a bottom surface on which an unevenness having a height difference ranging from &1 &quot;111 to iOem is formed. 6. The light-emitting diode of claim 1, wherein the transparent substrate is formed of GaP. 7. The light-emitting diode of claim 6 wherein the transparent substrate is formed of η-type GaP and has a rough (1H) plane as its main surface. 8. The light-emitting diode of claim 1, wherein the transparent substrate has a thickness in the range of 50 to 300 &quot; m. 9. The light-emitting diode of claim 1, wherein the light-emitting layer, the first electrode, and the second electrode each have a region SA, S, & S2, wherein the light-emitting diode has a 100% region In the case of the light-emitting surface of the outer shape, the relationship of 80% &lt; Sa &lt; 90%, 10% &lt; S &lt; 20% and 5% &lt; S2 &lt; 10 % is satisfied. 10. The light-emitting diode of claim 1, wherein the second electrode is composed of two or more straight lines extending in parallel with each other and having opposite ends on opposite sides thereof, wherein each of the wires is connected a dotted line of the end point of the side is disposed substantially parallel to a side surface of the light emitting diode, and one or more lines are connected to one of the opposite sides of the adjacent parallel straight line at one of the opposite portions of the arbitrarily selected parallel straight line The end point. -2 - 1376039 11·如申請專利範圍第1項之發光二極體，其中當該 第二電極凸出發光表面上時，其便易於落在該第二面之該 傾斜表面的範圍之外。 12· —種發光二極體，其具有主要光汲取表面並包含 一包括半導體層的複合半導體層； 該複合半導體層所包含的一發光部分； 該發光部分中所包含的一發光層； 一連結該複合半導體層的透明基底；及 形成於該透明基底相對側上之該主要光汲取表面上具 相反極性的第一及第二電極； 其中該第二電極係形成於藉移除該半導體層而暴露之 該複合半導體層之一部分的位置上，並具有以該半導體層 圍住的周圍；及 其中該主要光汲取表面具有具0.8mm或更多之最大寬 度的外部形狀；及 其中該第二電極的末端與該發光部分的末端之間的距 離E m，及主要發光.波長λυηιη滿足570 &lt; λ0 &lt; 635及0.8 χλο-350&lt; Ε&lt; 1·6χλο-750 的關係。 13. —種發光二極體，其具有主要光汲取表面並包含 一包括半導體層的複合半導體層； 該複合半導體層所包含的一發光部分； 該發光部分中所包含的一發光層； -3- 1376039 一連結該複合半導體層的透明基底；及 形成於該透明基底相對側上之該主要光汲取表面上具 相反極性的第一及第二電極； 其中該第二電極係形成於藉移除該半導體層而暴露之 該複合半導體層之一部分的位置上，並具有以該半導體層 圍住的周圍；及 其中該主要光汲取表面具有具〇.8mm或更多之最大寬 度的外部形狀；及 其中當該第一電極係經結合具15ym或更少之寬度的 線而形成時，該鄰近線與主要發光波長XDnm之間的距離 D # m 滿足 570&lt; λ〇〈 635 及 0.4χλ〇-200〈 D&lt; 0.8χλ〇-400 的關係。 14. 如申請專利範圍第1項、第12項或第13項之發 光二極體，進一步包含形成以便覆蓋該第一電極及至少部 分該光汲取表面的透明導電膜。 15. 如申請專利範圍第14項之發光二極體，其中該 透明導電膜係由ΙΤΟ形成。 1 6.如申請專利範圍第1項、第1 2項或第1 3項之發 光二極體，其中該發光部分包含一 GaP層且該第二電極形 成於該GaP層之上。 17. 如申請專利範圍第1項、第12項或第13項之發 光二極體，其中該第一電極爲η-型極性及該第二電極爲p-型極性。 18. 如申請專利範圍第1項、第12項或第13項之發 -4- 1376039 光二極體，其中包含該發光部分的該複合半導體層係由 (AlxGahX)YIn丨.YP ( 0SXS1，0SYS1)之合成物形成。 19.如申請專利範圍第1項、第12項或第13項之發 光二極體，其中該發光部分包含AlGalnP。The light-emitting diode of claim 1, wherein when the second electrode protrudes from the light-emitting surface, it tends to fall outside the range of the inclined surface of the second surface. a light-emitting diode having a main light extraction surface and comprising a composite semiconductor layer including a semiconductor layer; a light-emitting portion included in the composite semiconductor layer; a light-emitting layer included in the light-emitting portion; a transparent substrate of the composite semiconductor layer; and first and second electrodes having opposite polarities on the main light extraction surface formed on opposite sides of the transparent substrate; wherein the second electrode is formed by removing the semiconductor layer a portion of the portion of the composite semiconductor layer exposed and having a periphery surrounded by the semiconductor layer; and wherein the main light extraction surface has an outer shape having a maximum width of 0.8 mm or more; and the second electrode The distance E m between the end of the light emitting portion and the end of the light emitting portion, and the main light emission. The wavelength λ υ ηηη satisfies the relationship of 570 &lt; λ0 &lt; 635 and 0.8 χ λο - 350 &lt; Ε &lt; 1·6 χ λο - 750. 13. A light-emitting diode having a main light extraction surface and comprising a composite semiconductor layer including a semiconductor layer; a light-emitting portion included in the composite semiconductor layer; a light-emitting layer included in the light-emitting portion; - 1376039 a transparent substrate joining the composite semiconductor layer; and first and second electrodes having opposite polarities on the main light extraction surface formed on opposite sides of the transparent substrate; wherein the second electrode is formed by removing a portion of the semiconductor layer exposed to the semiconductor layer and having a periphery surrounded by the semiconductor layer; and wherein the main light extraction surface has an outer shape having a maximum width of 〇8 mm or more; Wherein when the first electrode is formed by bonding a line having a width of 15 μm or less, the distance D # m between the adjacent line and the main emission wavelength XDnm satisfies 570 &lt; λ 〇 < 635 and 0.4 χ λ 〇 - 200 < D&lt;0.8χλ〇-400 relationship. 14. The light-emitting diode of claim 1, 12 or 13, further comprising a transparent conductive film formed to cover the first electrode and at least a portion of the light extraction surface. 15. The light-emitting diode of claim 14, wherein the transparent conductive film is formed of tantalum. 1 6. The light-emitting diode of claim 1, item 1, or item 13, wherein the light-emitting portion comprises a GaP layer and the second electrode is formed over the GaP layer. 17. The light-emitting diode of claim 1, 12 or 13, wherein the first electrode is of an η-type polarity and the second electrode is of a p-type polarity. 18. For the application of the patent scope, item 1, item 12 or item 13, the -4- 1376039 light diode, wherein the composite semiconductor layer containing the light-emitting portion is composed of (AlxGahX)YIn丨.YP (0SXS1, 0SYS1) The composition of the composition. 19. The light-emitting diode of claim 1, 12 or 13, wherein the luminescent portion comprises AlGalnP.
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JP2004128321A (en) * 2002-10-04 2004-04-22 Matsushita Electric Works Ltd Semiconductor light emitting device
JP3953070B2 (en) * 2005-03-01 2007-08-01 松下電工株式会社 Semiconductor light emitting device

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JP2007220709A (en) 2007-08-30
KR20080091391A (en) 2008-10-10

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