1362065 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種濕式清洗裝置’特定而言係關於將在 濕式清洗裝置中用於清洗抓持基片之自動夾頭（Robot Chuck)的自動夾頭清洗槽與用於沖洗經清洗處理之基片的 基片沖洗槽合為一體之自動夾頭清洗及基片沖洗槽，以及 具有該自動夾頭清洗及基片沖洗槽之濕式清洗裝置及基片 清洗方法。 【先前技術】 隨著半導體元件迴路圖案之設計規則（Design Rule)之微 細化，半導體元件生產過程中所使用之半導體基片上生成 或附著之各種微粒（Particle)、金屬雜質 '有機物等引起的 污染對製品之成品率或可靠度產生之影響變得越來越大。 隨之’在半導體元件生產過程中去除附著在半導體基片上 之污染物之清洗製程的重要性變得越來越大。 半導體基片之清洗方法包括依靠電漿處理或紫外線照射 等之乾式（Dry)清洗及使用清洗液之濕式（wet)清洗，在此 等清洗方法中’漁式清洗與乾式清洗相比具有裝置成本 低 '處理量高、可同時去除多種類型污染、根據處理方法 可進行批量（Batch)處理或前後側同時清洗等優點，因此目 前在半導體製程中濕式清洗佔據主流地位。 下面參照附圖說明先前技術所提供之濕式清洗裝置及設 在其中之自動夾頭清洗槽。 圖1係先前技術所提供之濕式清洗裝置之概要圖，圖2係 117403.doc 1362065 先前技術所提供之自動夾頭清洗槽之剖視圖。 如圖所示，先前一般的濕式清洗裝置包含用於傳送基片 之基片傳送部10、將該基片裝載至本裝置之裝載部3〇、用 於清洗該基片之清洗部50、用於對基片進行乾燥之乾燥部 60以及將在該清洗部50進行清洗之基片搬運至外部之卸載 部40。基片傳送部1〇包含複數個用於傳送基片之傳送臂 (Robot)12(12a至 12e)。 φ 該基片傳送部10用於將基片自裝載部30經清洗部5〇及乾 燥部60移動至卸載部40,包含安裝有抓持基片之自動夾頭 14(1乜至14e)並沿清洗處理方向移動之傳送臂12(12&至12约 - 及用於引導該等傳送臂移動之傳送導軌16。通常，由複數 個基片組成一基片組以在一次清洗製程中同時對複數個基 片進行清洗。 該裝載部30設有用於放置搭載複數個基片之基片盒 (cassette)70的裝載器（Loader)3丨及作為基片之清洗製程準 • 備位置之緩衝台（Buffer Stage)32。該裝載器31自基片盒7〇 取出基片傳送至緩衝台32，並將空基片盒7〇傳送至卸載部 4〇。該卸載部40設有卸載器（Uni〇ader)41，從而將經清洗 處理之基片搭載至基片盒70搬運至外部。 该裝載部30與卸載部40之間依直線佈置與該裝載部3〇相 鄰之由複數個處理槽51(5 la，51c，51r，52c，521·，53c， 3r)組成之清洗部5〇及與該卸載部相鄰之乾燥部。該 等處理槽51包含為清洗傳送臂12a之自動夾頭14&而裝有去 離子水之自動夾頭清洗槽5 la、為對基片進行實際的濕式 H7403.doc 1362065 清洗而裝有化學清洗液之第一至第三基片清洗槽（5ic， 52c 53c)及為沖洗經清洗處理之基片而裝有去離子水之 第一至第三基片沖洗槽（51r，52r，53r)e自動夾頭清洗槽 51a用於去除第一傳送臂12a之自動夹頭將基片投入第 一清洗槽51c之後退出時沾在自動夾頭14a上之清洗液。此 係為儘量防止當自動夾頭14a將基月安放至基片清洗槽5u 並退出之後未去除化學清洗液即移動至作為下一將被處理 之基片之準備位置的緩衝台32時污染緩衝台32。 如圖2所示，該自動夾頭清洗槽5丨a係内部裝有去離子水 之容器’具有與一般的沖洗槽類似之結構。不同點在於， 在該自動夾頭清洗槽51 a上部在自動夾頭i 4a周圍設置用於 乾燥沾在自動夾頭14a上之去離子水之複數個吹掃氣體 (Purge Gas)喷射器55。亦即，該自動夾頭14a下降沒入自 動夹頭清洗槽51a内之去離子水中而被清洗，完成清洗之 後重新上升。此時’該自動夾頭14a由設置在其周圍之吹 掃氣體噴射器55所喷射之氮氣、空氣等非活性氣體進行乾 燥。 如圖1所示，如上所述之清洗槽及沖洗槽中，自動夾頭 清洗槽5 1 a與缓衝台32相鄰而配置，其後基片清洗槽 (51c ’ 52c，53c)及基片沖洗槽（51r，52r，53r)交替配置。 經該清洗部50完成清洗及沖洗之基片由乾燥部6〇内之乾燥 器61完成乾燥處理之後被傳送至卸載部4〇。 在如上所述之先前的濕式清洗裝置中，基片依次經過裝 載器31、緩衝台32、第一基片清洗槽51〇、第一基片沖洗 117403.doc 1362065 槽51ι•、第二基片清洗槽52c、第二基片沖洗槽52γ、第三基 片清洗槽53c、第三基片沖洗槽53r '乾燥器61及卸載器 41 〇 對第一基片組進行清洗作業時，第一傳送臂12a之自動 夾頭14a在該緩衝台32抓持第一基片組傳送至第一基片清 洗槽5 1 c ’隨後後退在自動夾頭清洗槽5 1 &中進行清洗。 隨後，為進行第二基片組之清洗作業，首先該第一傳送 Φ 臂i2a之自動央頭l4a將第一基片組自第一基片清洗槽51c 傳送至第一基片沖洗槽5lr。隨後，第一傳送臂12a之自動 夾頭14a在移動至放置第二基片組之緩衝台32之前先在自 動夾頭明洗槽51a清洗自動夾頭i4a之後才移動至該緩衝台 32抓持第二基片組投入至第一基片清洗槽5 1 c内。 在此過程中，雖然第二基片組在第一基片組被傳送至第 一基片沖洗槽51r之後即可投入第—基片清洗槽51(；，但在 第傳送臂12a之自動夾頭i4a在自動夾頭清洗槽51a内進 • 行清洗之時間内僅可在緩衝台3 2等待。 亦即’在將第一基片組傳送至第一基片清洗槽51c之後 第一傳送臂i2a之自動夾頭14a在自動夾頭清洗槽化内進 行清洗之時間不會對整個製程時間產生影響，因為此時在 第一基片清洗槽51C内正在對基片進行清洗處理。但當隨 後投入第二基片組時，由於第_傳送臂i2a之自動央頭— 先將第一基片組傳送至第一基片沖洗槽51r，隨後，在將 第二基片組自緩衝台32傳送至空置的第一基片清洗槽5ic 之前需經自動夾頭清洗槽51&進行清洗及乾燥，因此該自 117403.doc 1362065 動夾頭清洗時間對整個製程時間帶來影響β 【發明内容】 本發明係為解決如上所述之問題而提出的，其目的在於 提供藉由取消專門的自動夹頭專用清洗槽來減小濕式清洗 裝置大小之自動夹頭清洗及基片沖洗槽，以及具有該自動 央頭清洗及基片沖洗槽之濕式清洗裝置及基月清洗方法。 本發明之另一目的在於提供藉由取消在專門的自動夾頭 清洗槽中清洗自動夹頭之製程來簡化整個濕式清洗製程之 自動夹頭清洗及基片沖洗槽，以及具有該自動夾頭清洗及 基片沖洗槽之濕式清洗裝置及基片清洗方法。 為實現上述目的，依據本發明所提供之自動夾頭清洗及 基片沖洗槽包含上端開放之在内部裝有去離子水之容器、 可％動地設置在該容器上部用於開閉該容器上端之封蓋、 設在該封蓋内側之乾燥裝置。 該乾燥裝置最佳&含向該傳送臂之㈣夾頭喷射氣體之 吹掃氣體噴射器。 本發明所提供之濕式清洗裝置包含待進行清洗處理之基 片進仃等候之裝載部、多於一個的基片清洗槽、與該基片 清洗槽交替設置之多於-個的基片沖洗槽、具有抓持二片 之自動夾輕在該㈣部與W清洗敎W沖洗槽之間 傳送基片之傳送臂；配置在該裝載部近處之基片沖洗槽包 含用於對該傳送臂之自動夾頭進行乾燥之乾燥裝置。 j乾燥裝置包含向該傳送臂之自動炎頭喷射氣體之吹掃 乳噴射器。此時，該吹掃氣體嗔射器最佳為向下傾斜地 117403.doc 1362065 向該傳送臂之自動夾頭噴射氣體。 配置在該裝載部近處之基片沖洗槽上設有用於開閉其上 端之封蓋，該乾燥裝置設置在該封蓋◊在此，該封蓋可旋 動地設置在基片沖洗槽上部，該乾燥裝置最佳設置在該封 蓋内側面。 本發明所提供之基片清洗方法，包含步驟：傳送臂之自 動灸頭在將基片自裝載器安放至基片清洗槽内之後上升； 該基片在基片清洗槽内完成清洗之後，該自動夾頭抓持該 基片清洗槽内之基片傳送至基片沖洗槽；當該自動夾頭將 基片安放至該基片沖洗槽内之後上升時，對該自動夾頭進 行乾燥。 該對自動夾頭進行乾燥之步驟最佳包含將非活性氣體喷 射至該上升之自動夾頭的步驟。 在該對自動夾頭進行乾燥之步驟中最佳控制該自動夾頭 之上升速度以使該自動夾頭可被乾燥。 在該對自動夾頭進行乾燥之步驟之後最佳亦包含該傳送 臂將後續待處理之基片自裝載器傳送至基片清洗槽之步 驟。 【實施方式】 以下，參照附圖詳細說明本發明所提供之自動夾頭清洗 及基片沖洗槽之較佳實施例。 圖3係應用本發明所提供之自動夾頭清洗及基片沖洗槽 之濕式清洗裝置的概要圖，圖4係本發明所提供之自動夾 頭清洗及基片沖洗槽之剖視圖。 117403.doc 1362065 如圖3所示，本發明所提供之濕式清洗裝置包含用於傳 送基片之基片傳送部100、將該基片裝載至本裝置之裝載 部3 00、用於清洗該基片之清洗部5〇〇、用於對基片進行乾 燥之乾燥部600以及將在該清洗部500進行清洗之基片搬運 至外部之卸載部400。基片傳送部100包含複數個用於傳送 基片之傳送臂120。 具體而言，該基片傳送部1〇〇用於將基片自裝載部3〇〇經 • 清洗部500及乾燥部600移動至卸載部400，包含抓持基片 沿清洗處理方向移動之第一至第五傳送臂l2〇(i2〇a至12以） 及用於引導該第-至第五傳送臂12G移動之傳送導軌16〇。 該第一至第五傳送臂120分別包含抓持基片而上下升降之 第一至第五自動炎頭140(1術至14〇e)。該等自動失頭14〇 一次抓持複數個基片進行傳送。亦即，由複數個基片組成 一基片組從而在一次清洗製程中同時對複數個基片進行清 洗。 瞻該裝載部300設置在基月清洗裝置一端。該裝載部则設 有用於放置搭載複數個基片之基片盒7〇〇的裝載器31〇及自 該基片盒7〇0取出之基片為進行清洗製程而等待的緩衝台 320。該裝載器31G自基片盒取出基片傳送至緩衝台 320 ’並將空基片盒7〇〇傳送至卸載部彻。放置在該緩衝 台320之基片等待進行清洗製程。該卸載部_設有卸載器 ’從而將完成清洗處理之基片重新搭載至基片盒⑽搬 運至外部》 該裝載部3〇0與卸載部400之間依直線佈置與該裝载部 117403.doc 1362065 300相鄰之由複數個處理槽，⑽，5iQr，歲，52〇r， 530c，53〇r)組成之清洗部5〇〇及與該却載部4〇〇相鄰之乾燥 部 600。 該等處理槽51G設置為複數個並且可容納垂直狀態之基 片，包含為對基片進行濕式清洗而裝有化學清洗液之第一 至第三基片清洗槽（51〇c，520c，53〇c)及為沖洗在第一基 片清洗槽51〇c中經清洗處理之基片i清洗抓持基片的第一 傳送臂120a之自動夾頭14〇&而裝有去離子水之第一基片沖 洗槽51〇r以及為沖洗在第二及第三基片清洗槽（52(^，53〇c) 中經清洗處理之基片而裝有去離子水之第二及第三基片沖 洗槽（52〇r ’ 53〇Γ)。該第一至第三基片清洗槽（5i〇c， 520c，530c)及第一至第三基片沖洗槽（51〇r，52〇r, 53〇〇 在該第一基片清洗槽5 1 〇c與緩衝台32相鄰而配置之後沿清 洗進行方向交替配置。經該清洗部5〇〇完成清洗及沖洗之 基片由乾燥部600内之乾燥器610完成乾燥處理之後被傳送 至卸載部400。 該清洗部500中之該第一基片沖洗槽51〇r即為本發明所 提供之自動夾頭清洗及基片沖洗槽，本實施例中為敍述方 便將其稱為第一基片沖洗槽5 1 Or。如圖4所示，該第一基 片沖洗槽5 1 Or設有上端開放之在内部裝有去離子水之容器 5 1 li•及可旋動地設置在該容器5丨lr之相對的兩個上端部之 沖洗槽封蓋5 1 3r〇該沖洗槽封蓋5 13r内側面設有喷射空氣 或氮氣等非活性氣體之複數個吹掃氣體喷射器5〗5，該吹 掃氣體喷射器515係用於對該傳送臂120a之自動夾頭140a 117403.doc 12 1362065 進行乾燥之乾燥裝置。該吹掃氣體噴射器515用於去除浸 入裝有去離子水之該容器511 r之後再退出的傳送臂12(^之 自動夾頭140a上附著之去離子水而乾燥該自動夾頭14〇3。 此時’該乾燥氣體最佳處於高溫乾燥狀態。並且，該吹掃 氣體喷射器515並非必須設置在該沖洗槽封蓋5131_，可設 置在該自動夾頭140a上升時向其噴射非活性氣體而使其乾 無之任何位置。 下面說明設有如上所述之本發明所提供之自動夾頭清洗 及基片沖洗槽的濕式清洗裝置之動作。 本發明所提供之濕式清洗裝置中，基片依次經過裝載器 3 1〇、緩衝台320、第一基片清洗槽5 1 〇c、第一基片沖洗槽 51〇r、第二基片清洗槽520c、第二基片沖洗槽52〇r、第三 基片清洗槽530c、第三基片沖洗槽53〇Γ、乾燥器61〇及卸 載器410。 對第一基片組進行清洗作業時，第一傳送臂12〇a之自動 夾頭140a在該緩衝台320抓持第一基片組傳送至第一基片 清洗槽510c。當第一基片組在第一基片清洗槽5i〇c中完成 清洗製程時，該第一傳送臂12〇a將第一基片組自第一基片 清洗槽5 1 0c傳送至第一基片沖洗槽5 j 〇Γ。 此時，若該第一傳送臂120a之自動夾頭MW抓持第一基 片組w位於該第一基片沖洗槽51〇r，即本發明所提供之自 動夾頭清洗及基片沖洗槽之上部，則該第一基片沖洗槽 510r之封蓋513ι·被打開。此後，該第__傳送臂i2()a之自動 夾頭MOa下降，將第一基片組w安放至佈置在第一基片沖 117403.doc -13- 1362065 洗槽51〇Γ之容器511Γ内之基片導向器51&上。當第一基片 組w被安放至基片導向器516r上時，該第一傳送臂丨2〇3之 自動夾則術張開而釋放第__基片㈣使其被安放在該基 片導向器516!上之後上升。此時，設置在該沖洗槽封蓋 513r内側面之複數個吹掃氣體噴射器515 等非活性氣體對自去離子水中退出之該第：傳送= 自動夹頭140a進行乾燥。亦即，控制該喷射器515使其在 該第一傳送臂120a之自動夾頭14〇a上升時向自動夾頭i4〇a 喷射非活性氣體。 此時，上升的該第一傳送臂12〇a之自動夾頭14〇a需一定 時間才可被該吹掃氣體喷射器515所喷射之非活性氣體乾 燥因此，慮及乾燥時間，應控制該第一傳送臂丨2〇a之自 動夾頭140a之上升速度低於下降速度。另外，為對該第一 傳送臂120a之自動夾頭140&進行乾燥，該吹掃氣體喷射器 515之噴射方向最佳為朝下。 亦即，該第一傳送臂12〇a之自動夾頭14〇a在將第一基片 組投入至第一基片沖洗槽510r之後，在自第一基片沖洗槽 51〇1•中退出之同時完成清洗及乾燥。亦即，該第一基片沖 洗槽51〇r亦用作自動夾頭清洗槽。 隧之，元成清洗之該第一傳送臂12〇a之自動夾頭14〇&抓 持在緩衝台320中等待之第二基片組傳送至（當前空置的）第 —基片清洗槽510c，使第二基片組在第一基片清洗槽51〇c 中進行清洗製程。隨後，當第二基片組在該第一基片清洗 槽5完成清洗製程時，該第一傳送臂120a之自動夾頭 117403.doc 14 1362065 140a將第二基片組傳送至第—基片沖洗槽51〇r。此時，原 先在該第一基片沖洗槽51 Or内之第一基片組由第二傳送臂 120b傳送至第二基片清洗槽52〇c，使得第一基片沖洗槽 5 1 Or成空置狀態，所以第二基片組可被順利地傳送至第一 基片沖洗槽5 1 Or。若第一基片沖洗槽5 i 〇r中第一基片組之 沖洗製程仍在進行中，則該第一傳送臂12〇a之自動夾頭 140a在將第二基片組自第一基片清洗槽51〇c取出之後在第 φ 一基片沖洗槽510r上部等候。 以上雖然已參照附圖及實施例進行說明，但熟習此項技 術者應可理解：在不脫離申請專利範圍所記載之本發明技 術思想之範圍内，可對本發明進行各種變形及修改。 紅上所述，依據本發明所提供之自動夾頭清洗及基片沖 洗槽，當傳送臂之自動夾頭在將第一基片組自基片清洗槽 傳送至基片沖洗槽之後為抓持第二基片組而移動至緩衝台 時，由於該傳送臂之自動夾頭在該基片沖洗槽進行清洗， _ S此無需專門的自動夾頭專用清洗槽。因此，可藉由取消 專門的自動夾頭專用清洗槽來減小濕式清洗裝置大小。並 且，由於將第一基片組自基片清洗槽移動至基片沖洗槽的 該傳送臂之自動夾頭可直接移動至緩衝台，因此可減小不 必要的作業時間。 【圖式簡單說明】 圖1係先前技術所提供之濕式清洗裝置之概要圖； 圖2係先别技術所提供之自動夾頭清洗槽之剖視圖； 圖3係應用本發明所提供之自動夾頭清洗及基片沖洗槽 117403.doc 1362065 之濕式清洗裝置的概要圖； 圖4係本發明所提供之自動夾頭清洗及基片沖洗槽之剖 視圖。1362065 IX. Description of the Invention: [Technical Field] The present invention relates to a wet cleaning apparatus 'specifically, relates to an automatic chuck for cleaning a gripping substrate in a wet cleaning apparatus (Robot Chuck) The automatic chuck cleaning tank is integrated with the substrate rinsing tank for rinsing the cleaned substrate, and the automatic chuck cleaning and substrate rinsing tank, and the wet type having the automatic chuck cleaning and the substrate rinsing tank Cleaning device and substrate cleaning method. [Prior Art] With the miniaturization of the design rule of the semiconductor element loop pattern, various particles (organic substances) generated by or attached to the semiconductor substrate used in the semiconductor element production process, metal impurities, organic substances, etc. The impact on the yield or reliability of the product is growing. The importance of the cleaning process for removing contaminants adhering to the semiconductor substrate during the production of semiconductor components has become more and more important. The semiconductor substrate cleaning method includes dry cleaning by means of plasma treatment or ultraviolet irradiation, and wet cleaning using a cleaning liquid. In these cleaning methods, the 'fishing cleaning has a device compared with the dry cleaning. Low cost 'high processing capacity, can remove multiple types of pollution at the same time, can carry out batch processing or simultaneous cleaning on the front and back sides according to the processing method. Therefore, wet cleaning is currently in the mainstream position in semiconductor manufacturing. The wet cleaning apparatus provided by the prior art and the automatic chuck cleaning tank provided therein will be described below with reference to the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view of a wet cleaning apparatus provided by the prior art, and Figure 2 is a cross-sectional view of the automatic chuck cleaning tank provided by the prior art 117403.doc 1362065. As shown, the conventional general wet cleaning apparatus includes a substrate transfer portion 10 for transporting a substrate, a loading portion 3 for loading the substrate to the device, a cleaning portion 50 for cleaning the substrate, The drying unit 60 for drying the substrate and the substrate for cleaning the cleaning unit 50 are transported to the external unloading unit 40. The substrate transfer portion 1A includes a plurality of robots 12 (12a to 12e) for transporting the substrates. φ The substrate transfer unit 10 is for moving the substrate from the loading unit 30 through the cleaning unit 5〇 and the drying unit 60 to the unloading unit 40, and includes the automatic chuck 14 (1乜 to 14e) on which the gripping substrate is mounted. a transfer arm 12 (12& to 12 about - and a transfer guide 16 for guiding the movement of the transfer arms in a cleaning process direction. Typically, a plurality of substrates are used to form a substrate group to simultaneously perform a cleaning process The plurality of substrates are cleaned. The loading unit 30 is provided with a loader 3 for placing a cassette 70 carrying a plurality of substrates, and a buffer for the cleaning process of the substrate. (Buffer Stage) 32. The loader 31 transports the substrate from the substrate cassette 7 to the buffer table 32, and transports the empty substrate cassette 7 to the unloading portion 4. The unloading portion 40 is provided with an unloader (Uni 〇ader 41, the substrate subjected to the cleaning process is carried to the substrate cassette 70 and transported to the outside. The loading unit 30 and the unloading portion 40 are arranged in a line with the plurality of processing tanks adjacent to the loading portion 3〇. a cleaning unit 5〇 composed of 51 (5 la, 51c, 51r, 52c, 521·, 53c, 3r) and the unloading unit Adjacent drying section. The processing tanks 51 comprise automatic collets 14& for cleaning the transfer arm 12a, and automatic collet cleaning tanks 5 la with deionized water for actual wetting of the substrate. H7403.doc 1362065 First to third substrate cleaning tanks (5ic, 52c 53c) for cleaning and containing chemical cleaning liquid, and first to third substrate processing tanks (51r) for rinsing the cleaned substrate with deionized water , 52r, 53r) e automatic chuck cleaning tank 51a is used for removing the cleaning liquid which is adhered to the automatic chuck 14a when the automatic chuck of the first transfer arm 12a is put into the first cleaning tank 51c and then exits. The contamination buffering station 32 is prevented as much as possible when the automatic chuck 14a is placed in the substrate cleaning tank 5u and exited without removing the chemical cleaning liquid, that is, moving to the buffer stage 32 which is the preparation position of the substrate to be processed next. As shown in Fig. 2, the automatic chuck cleaning tank 5丨a is a container containing deionized water inside. It has a structure similar to that of a general flushing tank. The difference is that the upper portion of the automatic chuck cleaning tank 51a is Automatic collet i 4a is set around for drying on the automatic clip a plurality of Purge Gas injectors 55 of deionized water on the head 14a. That is, the automatic chuck 14a is lowered into the deionized water in the automatic chuck cleaning tank 51a to be cleaned, after cleaning is completed. At this time, the automatic chuck 14a is dried by an inert gas such as nitrogen gas or air sprayed by the purge gas injector 55 disposed around it. As shown in Fig. 1, the cleaning tank and the flushing are as described above. In the tank, the automatic chuck cleaning tank 5 1 a is disposed adjacent to the buffer table 32, and thereafter the substrate cleaning tanks (51c' 52c, 53c) and the substrate processing tanks (51r, 52r, 53r) are alternately arranged. The substrate which has been cleaned and rinsed by the cleaning unit 50 is dried by the dryer 61 in the drying section 6 and then transferred to the unloading section 4A. In the prior wet cleaning apparatus as described above, the substrate sequentially passes through the loader 31, the buffer table 32, the first substrate cleaning tank 51, the first substrate rinse 117403.doc 1362065, the tank 51, and the second base. The sheet cleaning tank 52c, the second substrate rinsing tank 52γ, the third substrate cleaning tank 53c, the third substrate rinsing tank 53r'dryer 61 and the unloader 41 进行 are used for cleaning the first substrate group, first The automatic chuck 14a of the transfer arm 12a grips the first substrate group at the buffer table 32 and transports it to the first substrate cleaning tank 5 1 c ' and then retreats in the automatic chuck cleaning tank 5 1 & Subsequently, for the cleaning operation of the second substrate group, first, the automatic head end l4a of the first transfer Φ arm i2a transfers the first substrate group from the first substrate cleaning bath 51c to the first substrate rinsing tank 51r. Subsequently, the automatic chuck 14a of the first transfer arm 12a is moved to the buffer table 32 after the automatic chuck i7a is cleaned before the automatic chuck head washing chamber 51a is moved to the buffer table 32 on which the second substrate group is placed. The second substrate group is placed into the first substrate cleaning tank 5 1 c. In this process, although the second substrate group can be put into the first substrate cleaning tank 51 after the first substrate group is transferred to the first substrate processing tank 51r (;, but the automatic holder of the transfer arm 12a The head i4a can only wait at the buffer table 32 during the cleaning process in the automatic chuck cleaning tank 51a. That is, the first transfer arm after the first substrate group is transferred to the first substrate cleaning tank 51c. The cleaning time of the automatic chuck 14a of the i2a in the automatic chuck cleaning tank does not affect the entire process time, because the substrate is being cleaned in the first substrate cleaning tank 51C at this time. When the second substrate group is put into place, the first substrate group is transferred to the first substrate processing tank 51r due to the automatic head of the first transfer arm i2a, and then, the second substrate group is transferred from the buffer table 32. Until the vacant first substrate cleaning tank 5ic is cleaned and dried by the automatic chuck cleaning tank 51 & therefore, the cleaning time from the 117403.doc 1362065 moving chuck affects the entire processing time β [Summary] The invention is proposed to solve the problems as described above The purpose of the invention is to provide an automatic chuck cleaning and substrate rinsing tank for reducing the size of a wet cleaning device by eliminating a special automatic chuck-specific cleaning tank, and having the automatic head cleaning and substrate rinsing tank wet Cleaning device and base cleaning method. Another object of the present invention is to provide an automatic chuck cleaning and substrate for simplifying the entire wet cleaning process by eliminating the process of cleaning the automatic chuck in a special automatic chuck cleaning tank. Flushing tank, and wet cleaning apparatus and substrate cleaning method having the same, and the substrate cleaning method. a container containing deionized water inside, a cover that can be movably disposed on the upper portion of the container for opening and closing the upper end of the container, and a drying device disposed inside the cover. The drying device is optimally & The (four) collet gas ejecting gas ejector of the present invention. The wet cleaning apparatus provided by the present invention comprises a substrate to be cleaned and processed for waiting for loading. More than one substrate cleaning tank, more than one substrate rinsing tank alternately disposed with the substrate cleaning tank, and an automatic nip which has two gripping sheets between the (four) portion and the W cleaning 冲洗W rinsing tank a transfer arm for transporting the substrate; a substrate rinsing tank disposed near the loading portion includes a drying device for drying the automatic chuck of the transfer arm. j The drying device includes an automatic ejector gas jet to the transfer arm The purged ejector is at this time, and the purge gas ejector is preferably slidably 117403.doc 1362065 to the automatic collet of the transfer arm. The substrate rinsing tank disposed near the loading portion A cover for opening and closing the upper end thereof is disposed, the drying device is disposed at the cover, and the cover is rotatably disposed at an upper portion of the substrate washing tank, and the drying device is preferably disposed on the inner side of the cover . The substrate cleaning method provided by the present invention comprises the steps of: the automatic moxibustion head of the transfer arm is raised after the substrate is placed from the loader into the substrate cleaning tank; after the substrate is cleaned in the substrate cleaning tank, The automatic chuck grips the substrate in the substrate cleaning tank and transfers it to the substrate processing tank; when the automatic chuck raises the substrate after being placed in the substrate processing tank, the automatic chuck is dried. The step of drying the automatic collet preferably includes the step of injecting an inert gas to the rising automatic collet. The rising speed of the automatic chuck is preferably controlled in the step of drying the automatic chuck so that the automatic chuck can be dried. Preferably, after the step of drying the automatic chuck, the transfer arm also transfers the subsequent substrate to be processed from the loader to the substrate cleaning bath. [Embodiment] Hereinafter, preferred embodiments of the automatic chuck cleaning and substrate rinsing tank provided by the present invention will be described in detail with reference to the accompanying drawings. Figure 3 is a schematic view of a wet cleaning apparatus for applying automatic chuck cleaning and substrate processing tanks provided by the present invention, and Figure 4 is a cross-sectional view of the automatic chuck cleaning and substrate processing tank provided by the present invention. 117403.doc 1362065 As shown in FIG. 3, the wet cleaning apparatus provided by the present invention comprises a substrate transfer unit 100 for transporting a substrate, and the substrate is loaded to the loading unit 300 of the apparatus for cleaning The cleaning unit 5 of the substrate, the drying unit 600 for drying the substrate, and the unloading unit 400 for transporting the substrate cleaned by the cleaning unit 500 to the outside. The substrate transfer portion 100 includes a plurality of transfer arms 120 for transferring substrates. Specifically, the substrate transfer unit 1 is configured to move the substrate from the loading unit 3 through the cleaning unit 500 and the drying unit 600 to the unloading unit 400, and includes the first step of moving the gripping substrate in the cleaning process direction. The first to fifth transfer arms 12 〇 (i2 〇 a to 12) and the transfer guide 16 用于 for guiding the movement of the first to fifth transfer arms 12G. The first to fifth transfer arms 120 respectively include first to fifth automatic inflammatory heads 140 (1 to 14 〇e) that grip the substrate and lift up and down. These automatic heads 14〇 hold a plurality of substrates at a time for transmission. That is, a plurality of substrates are composed of a plurality of substrates to simultaneously clean a plurality of substrates in one cleaning process. The loading unit 300 is disposed at one end of the base month cleaning device. The loading unit is provided with a loader 31 for placing a substrate cassette 7 on which a plurality of substrates are mounted, and a substrate taken out from the substrate cassette 7〇0 as a buffer table 320 waiting for a cleaning process. The loader 31G transfers the substrate from the substrate cassette to the buffer table 320' and transports the empty substrate cassette 7 to the unloading portion. The substrate placed on the buffer table 320 is awaiting a cleaning process. The unloading portion _ is provided with an unloader' to re-carry the substrate that has completed the cleaning process to the substrate cassette (10) and transported to the outside. The loading portion 〇0 and the unloading portion 400 are arranged in a straight line with the loading portion 117403. Doc 1362065 300 A cleaning unit 5〇〇 consisting of a plurality of processing tanks, (10), 5iQr, aged, 52〇r, 530c, 53〇r) and a drying unit 600 adjacent to the load carrying portion 4〇〇 . The processing tanks 51G are provided in plural and can accommodate a substrate in a vertical state, and include first to third substrate cleaning tanks (51〇c, 520c, which are provided with a chemical cleaning liquid for wet cleaning the substrate. 53〇c) and cleaning the automatic chuck 14〇& of the first transfer arm 120a of the grip substrate for cleaning the substrate i cleaned in the first substrate cleaning bath 51〇c, and containing deionized water The first substrate rinsing tank 51〇r and the second and the second of the deionized water for rinsing the cleaned substrate in the second and third substrate cleaning tanks (52 (^, 53〇c) Three-substrate rinsing tank (52〇r ' 53〇Γ). The first to third substrate cleaning tanks (5i〇c, 520c, 530c) and the first to third substrate rinsing tanks (51〇r, 52) 〇r, 53〇〇 are arranged alternately in the cleaning direction after the first substrate cleaning bath 5 1 〇c is disposed adjacent to the buffer table 32. The substrate which has been cleaned and rinsed by the cleaning unit 5 is dried. The dryer 610 in the portion 600 is sent to the unloading portion 400 after the drying process is completed. The first substrate rinsing tank 51 〇r in the cleaning portion 500 is provided by the present invention. The automatic chuck cleaning and the substrate rinsing tank are referred to as the first substrate rinsing tank 5 1 Or for convenience of description in the embodiment. As shown in FIG. 4, the first substrate rinsing tank 5 1 Or is provided. The upper end is provided with a container for deionized water inside, and a flushing tank cover 5 1 3r that is rotatably disposed at opposite upper ends of the container 5丨lr. The flushing tank cover 5 The inner side of 13r is provided with a plurality of purge gas injectors 5, 5 for injecting an inert gas such as air or nitrogen, and the purge gas injector 515 is used for the automatic chuck 140a 117403.doc 12 1362065 for the transfer arm 120a. Drying the drying device. The purging gas ejector 515 is for removing the deionized water attached to the transfer arm 12 (the automatic collet 140a) which is immersed in the container 511 r containing the deionized water and dried. The automatic chuck 14〇3. At this time, the drying gas is preferably in a high-temperature dry state. Moreover, the purge gas injector 515 does not have to be disposed in the flushing tank cover 5131_, and can be disposed when the automatic chuck 140a rises. Spraying an inert gas to it to make it dry The operation of the wet cleaning apparatus provided with the automatic chuck cleaning and substrate rinsing tank provided by the present invention as described above is explained. In the wet cleaning apparatus provided by the present invention, the substrate passes through the loader 3 1 in sequence. 〇, buffer table 320, first substrate cleaning tank 5 1 〇 c, first substrate rinsing tank 51 〇 r, second substrate cleaning tank 520 c, second substrate rinsing tank 52 〇 r, third substrate cleaning The groove 530c, the third substrate rinsing tank 53A, the dryer 61〇, and the unloader 410. When the first substrate group is cleaned, the automatic chuck 140a of the first transfer arm 12A is at the buffer table 320. The first substrate group is gripped and transferred to the first substrate cleaning bath 510c. When the first substrate group completes the cleaning process in the first substrate cleaning tank 5i〇c, the first transfer arm 12〇a transfers the first substrate group from the first substrate cleaning tank 5 1 0c to the first The substrate rinse tank 5 j 〇Γ. At this time, if the automatic chuck MW of the first transfer arm 120a grips the first substrate group w in the first substrate rinsing tank 51〇r, the automatic chuck cleaning and substrate rinsing tank provided by the present invention In the upper portion, the cover 513i of the first substrate rinsing tank 510r is opened. Thereafter, the automatic chuck MOa of the first __transport arm i2()a is lowered, and the first substrate group w is placed on the container 511 disposed in the first substrate punch 117403.doc -13 - 1362065 washing tank 51 Γ The substrate guide 51& When the first substrate group w is placed on the substrate guide 516r, the automatic clip of the first transfer arm 丨2〇3 is opened to release the __th substrate (4) to be placed on the substrate. The guide 516! rises afterwards. At this time, the inactive gas such as a plurality of purge gas injectors 515 disposed on the inner side of the rinse tank cover 513r is discharged from the deionized water: the transfer = automatic chuck 140a is dried. That is, the injector 515 is controlled to inject an inert gas into the automatic chuck i4〇a when the automatic chuck 14〇a of the first transfer arm 120a rises. At this time, the rising automatic collet 14〇a of the first transfer arm 12〇a takes a certain time to be dried by the inert gas sprayed by the purge gas injector 515. Therefore, the drying time should be controlled. The rising speed of the automatic chuck 140a of the first transfer arm 丨2〇a is lower than the descending speed. Further, in order to dry the automatic chuck 140 & of the first transfer arm 120a, the direction of the purge gas injector 515 is preferably directed downward. That is, the automatic chuck 14〇a of the first transfer arm 12〇a exits from the first substrate rinse tank 51〇1• after the first substrate set is put into the first substrate rinse tank 510r. At the same time, cleaning and drying are completed. That is, the first substrate washing tank 51〇r is also used as an automatic chuck cleaning tank. After the tunneling, the automatic chuck 14 of the first transfer arm 12A is cleaned and the second substrate group waiting to be held in the buffer table 320 is transferred to the (currently vacant) first substrate cleaning tank. 510c, the second substrate group is subjected to a cleaning process in the first substrate cleaning bath 51〇c. Subsequently, when the second substrate group completes the cleaning process in the first substrate cleaning bath 5, the automatic chuck 117403.doc 14 1362065 140a of the first transfer arm 120a transfers the second substrate group to the first substrate. Flush the tank 51〇r. At this time, the first substrate group originally in the first substrate rinsing tank 51 Or is transferred from the second transfer arm 120b to the second substrate cleaning bath 52〇c, so that the first substrate rinsing tank 5 1 Or The vacant state, so the second substrate group can be smoothly transferred to the first substrate rinsing tank 5 1 Or. If the processing of the first substrate group in the first substrate processing tank 5 i 〇r is still in progress, the automatic chuck 140a of the first transfer arm 12A is in the second substrate group from the first substrate. After the sheet cleaning tank 51〇c is taken out, it is waited at the upper portion of the φth substrate washing tank 510r. The present invention has been described with reference to the accompanying drawings and embodiments. It is understood that the invention may be modified and modified without departing from the scope of the invention. Red, according to the automatic chuck cleaning and substrate rinsing tank provided by the present invention, when the automatic chuck of the transfer arm is conveyed after transferring the first substrate group from the substrate cleaning tank to the substrate rinsing tank When the second substrate group is moved to the buffer table, since the automatic chuck of the transfer arm is cleaned in the substrate washing tank, the special automatic chuck-specific cleaning tank is not required. Therefore, the size of the wet cleaning apparatus can be reduced by eliminating the special automatic chuck-specific cleaning tank. Moreover, since the automatic chuck for moving the first substrate group from the substrate cleaning tank to the transfer arm of the substrate processing tank can be directly moved to the buffer table, unnecessary work time can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a wet cleaning apparatus provided by the prior art; FIG. 2 is a cross-sectional view of an automatic chuck cleaning tank provided by the prior art; FIG. 3 is an automatic clamp provided by the present invention. A schematic view of a wet cleaning apparatus for head cleaning and substrate processing tank 117403.doc 1362065; and Fig. 4 is a cross-sectional view of the automatic chuck cleaning and substrate processing tank provided by the present invention.
主要符號說明：120(120a至120e)為傳送臂，I40(140a至 140e)為自動夾頭，320為缓衝台，510c、520c、530c為基 片清洗槽，510r、520r、530r為基片沖洗槽，511r為容 器，513r為沖洗槽封蓋（Cover)，515為吹掃氣體嘴射器， 516r為基片導向器（Guide)。 【主要元件符號說明】Main symbol: 120 (120a to 120e) is the transfer arm, I40 (140a to 140e) is the automatic chuck, 320 is the buffer table, 510c, 520c, 530c are the substrate cleaning tank, and 510r, 520r, 530r are the substrates. The rinsing tank, 511r is a container, 513r is a flushing tank cover, 515 is a purge gas nozzle, and 516r is a substrate guide. [Main component symbol description]
10 12a ' 12b、12c、12d、12e 14a ' 14b、14c、14d、14e 16 30 31 32 40 41 50 51a 51c、52c、53c 51r、52r、53r 55 60 基板傳送邹 傳送臂 自動失碩 傳送導軌 裝裁部 I栽器 緩衝台 卸載部 卸栽器 清洗部 自動夾碩清洗槽 基板清洗槽 基板沖洗槽 人掃氣體噴射器 乾燥部 117403.doc -16- 136206510 12a ' 12b, 12c, 12d, 12e 14a ' 14b, 14c, 14d, 14e 16 30 31 32 40 41 50 51a 51c, 52c, 53c 51r, 52r, 53r 55 60 Substrate transfer Zou transfer arm automatic lost transfer guide Cutting part I plant buffer table unloading part unloader cleaning part automatic clamping master cleaning tank substrate cleaning tank substrate flushing tank person sweep gas injector drying section 117403.doc -16- 1362065
61 70 100 120a、120b、120c、120d、120e 140a ' 140b、140c、140d、140e 160 300 310 320 400 410 50061 70 100 120a, 120b, 120c, 120d, 120e 140a '140b, 140c, 140d, 140e 160 300 310 320 400 410 500
5 1 0c ' 520c ' 530c 510r ' 520r ' 530r 511r 513r 515 516r 600 610 700 W 乾燥器 基板盒 基板傳送部 傳送臂 自動夾頭 傳送導軌 裝載部 裝載器 缓衝台 卸載部 卸載器 清洗部 基板清洗槽 基板沖洗槽 容器 沖洗槽封蓋 吹掃氣體喷射器 基板導向Is 乾燥部 乾燥器 基板盒 基板組 117403.doc5 1 0c ' 520c ' 530c 510r ' 520r ' 530r 511r 513r 515 516r 600 610 700 W Dryer substrate box substrate transfer part transfer arm automatic chuck transfer rail loading part loader buffer stage unloading part unloader cleaning part substrate cleaning tank Substrate rinse tank container rinse tank cover purge gas injector substrate guide Is dry section dryer substrate box substrate group 117403.doc