1356449 九、發明說明： 【發明所屬之技術領域】 本發明主要是關於一種用於從化學機械拋光墊（CMp) 上移除（如磨平（smooth)、拋光（polish)、修整（dress)等）材 料。因此，本發明涵蓋化學、物理以及材料科學領域。 【先前技術】 拋光材料廣泛應用於拋光、刨平（planing) '修整或調 整等加工處理，例如，半導體產業目前每年花費超過十億 美元製造石夕晶圓’其必須表現出非常平坦且平滑的表面。 已知用於製造平滑且平坦表面之矽晶圓的技術為數眾多， 其中最常見的技術就是化學機械拋光（CM P)法，其包括以 拋光墊結合研磨液使用，這些CMP墊的修整可利用多種 工具完成。 【發明内容】 有關於一實施例，本發明提供一種在調整化學機械研 磨拋光墊（CMP拋光墊）時減少該CMP拋光墊之壓縮程度 的方法’其包括.結合該CMP抛光塾與至少一超硬切判元 件，該超硬切割元件包括一切割面，該切割面相對於該CMp 拋光墊之磨光表面具有等於或小於90度的角度；以及將 拖光墊相對於該切割元件的方向移動，令該切割面將 材料從該CMP拋光墊移除，以調整該cm P拋光塾。 關於另一態樣，本發明提供一種使CMP拋光墊之壓 縮最小化且從該CMP拋光墊移除材料的拋光墊調整器， 其包括：一基座以及複數切割元件，其係從該基座延伸出 1356449 來’各切割元件相對於該CMP拋光墊之磨光表面具有等 於或小於90度的角度，該切割元件的面被定向，使得該 拋光墊調整器和CMP拋光墊的相對移動，令從CMp抛光 墊以該切割面移除材料，而調整該CMp拋光墊。 關於本發明之另一態樣，一種在調整CMp拋光墊時 減少該CMP拋光墊之壓縮程度的方法，其包括：結合該cMp 拋光塾與複數個由多晶鑽石片所形成之超硬切割元件，各 切割π件包括一切割面，該切割面相對於該CMp拋光墊 之磨光表面具有等於或小於90度的角度；以及將CMp拋 光墊相對於該切割元件的方向移動，令該切割面將材料從 該CMP拋光墊移除，以調整該CMp拋光墊。 因此，上述已列出本發明各種重要的特色，因此在接 下來的詳細說明中可更進一步地理解，並且在本領域所做 的貢獻可能會有更佳的領會，而本發明的其他特徵將會從 接下來的詳細說明及其附圖和申請專利範圍中變得更為清 晰’也可能在實行本發明時得知。 【實施方式】 需要了解的是所附圖式僅是為進一步了解本發明而作 為描述用途，該圖式並非依照尺寸繪製或顯示，因此在尺 寸、粒徑大小以及其他態樣可能且通常是有誇飾情形，以 更清楚敘述本發明。因此，為製造本發明拋光墊調整器， 顯示於圖中之特定尺寸和態樣是會出現偏差的。 在本發明被揭露和敘述之前，必須了解的是以下所敘 述及揭露的發明並無意限制本發明的形狀'製作步驟或材 1356449 料’其可為本領域具備通常知識者所能推想到的等效形 狀製作步騾及材料，而以下說明中使用專有名詞的目的 係在敘述特定實施例，亦非對本發明有任何的限制。 而在開始敘述之前值得注意的是在本說明書及其申請 專利範圍所使用的單數型態字眼如「一」、「該」和「其」， 皆僅為先行詞，除非在上下文中清楚明白的指示為單數， 不然這些單數型態的先行詞亦包括複數對象，因此，舉例 來說，如「一切割元件」包括一或多個這種元件。 定義 以下是在本發明的說明及專利範圍中所出現之 詞的定義。 曰全部的筛孔大小除了有特別註明，否則在這裡指的都 是美國篩孔尺寸，而且，篩孔大小通常都被了解為一定量 的顆粒之平均篩孔大小，即使每個顆粒於特定的篩孔大小 貫際上可成為在小分布範圍内變動。 「實質上（substantially)」是指步驟、特性.、性質、狀 態、結構、項目或結果的完全、接近完全的範圍或程度。 任意舉一個例子來說’當二個或多個物體被指出彼此之間 間隔有一「實質上」一致的距離，則可得知這兩個或多個 物體彼此間隔有完全不可改變的距離，或彼此之間有著非 常接近不可改變之距離，而一般人無法察知其分別。而離 、、邑對几全確實可允許的偏差可在不同情況下依照特定上下 文來決定》“，通常來說接近完全就如同獲得絕對或完 整的完全具有相同的總體結果。 1356449 所用的「實質上地」在當使用於負面涵義亦同等適用， 以表示完全或接近完全缺乏步驟、特性、性質、狀態、結 構、項目或結果。任意舉一個例子來說，—「實質上沒有 (substantially free of)」外來物質的凹洞可為完全沒有外 來物質，或者非常近乎完全沒有外來物質，而其影響會如 同完全缺乏外來物質一樣。換句話說，一「實質上沒有」 外來物質的凹洞只要結果在孔洞沒有可測量的影響，則實 際上依·’然包含微小部分的外來物質。1356449 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates generally to a method for removing from a chemical mechanical polishing pad (CMp) (such as smoothing, polishing, dressing, etc.) )material. Accordingly, the present invention encompasses the fields of chemistry, physics, and materials science. [Prior Art] Polishing materials are widely used in polishing, planing, trimming or adjustment processing. For example, the semiconductor industry currently spends more than one billion US dollars per year to manufacture Shishi wafers, which must exhibit very flat and smooth surface. There are a number of techniques known for fabricating smooth and flat surface tantalum wafers, the most common of which is the chemical mechanical polishing (CM P) method, which involves the use of a polishing pad in combination with a slurry that can be used for trimming of these CMP pads. A variety of tools are available. SUMMARY OF THE INVENTION In one embodiment, the present invention provides a method of reducing the degree of compression of a CMP pad while adjusting a CMP pad (CMP pad), which includes combining the CMP polishing pad with at least one super a hard-cutting element comprising a cutting face having an angle equal to or less than 90 degrees with respect to the polished surface of the CMp polishing pad; and moving the dragging pad relative to the cutting element, The cutting face is removed from the CMP polishing pad to adjust the cm P polishing flaw. In another aspect, the present invention provides a polishing pad conditioner that minimizes compression of a CMP pad and removes material from the CMP pad, comprising: a base and a plurality of cutting elements from the base Extending 1356449 to 'each cutting element having an angle equal to or less than 90 degrees with respect to the buffed surface of the CMP pad, the face of the cutting element being oriented such that the relative movement of the pad adjuster and the CMP pad causes The CMp polishing pad was adjusted by removing the material from the CMp polishing pad with the cutting face. In another aspect of the invention, a method of reducing the degree of compression of a CMP pad while adjusting a CMp polishing pad, comprising: combining the cMp polishing pad with a plurality of superhard cutting elements formed from a polycrystalline diamond piece Each cutting π member includes a cutting surface having an angle equal to or less than 90 degrees with respect to the polishing surface of the CMp polishing pad; and moving the CMp polishing pad relative to the cutting element, such that the cutting surface will Material is removed from the CMP pad to adjust the CMp polishing pad. Accordingly, the various features of the invention have been set forth above, and thus may be further understood in the following detailed description, and may be better appreciated in the field, and other features of the invention will It will be apparent from the following detailed description and the appended claims and claims. [Embodiment] It is to be understood that the drawings are only for the purpose of describing the invention, and the drawings are not intended to The situation is exaggerated to more clearly describe the invention. Therefore, in order to manufacture the polishing pad adjuster of the present invention, the specific dimensions and aspects shown in the drawings may be deviated. Before the present invention is disclosed and described, it is to be understood that the invention described and disclosed herein is not intended to limit the <RTI ID=0.0> </ RTI> </ RTI> </ RTI> <RTIgt; The use of the proper nouns in the following description is for the purpose of describing particular embodiments and is not intended to limit the invention. It should be noted that the singular types of words such as "a", "the" and "the" are used in the specification and the scope of the claims, and are merely an antecedent, unless clearly stated in the context. The indications are singular, otherwise the antecedent of the singular forms also includes plural objects, and thus, for example, "a cutting element" includes one or more such elements. Definitions The following are definitions of words appearing in the description and patent claims of the present invention. The size of all sieve openings is unless otherwise specified, otherwise it refers to the size of the US mesh, and the size of the mesh is generally known as the average mesh size of a certain amount of particles, even if each particle is specific. The size of the mesh can be varied within a small distribution range. "Substantially" means the complete, near-complete extent or extent of a step, characteristic, property, state, structure, project, or result. As an example, when two or more objects are indicated to have a "substantially" uniform distance from each other, it can be known that the two or more objects are separated from each other by a completely immutable distance, or There is a very close distance to each other, and the average person cannot see the difference. The deviations that can be allowed from the sum of the two, can be determined according to the specific context in different situations. "In general, it is almost as complete or as complete and has the same overall result. 1356449 "Upper" is equally applicable when used in a negative sense to indicate complete or near complete lack of steps, characteristics, properties, status, structure, project or result. In any case, the “substantially free of” foreign matter can be completely free of foreign matter, or very completely free of foreign matter, and its effects will be the same as the complete lack of foreign matter. In other words, a hole that is "substantially free of" foreign matter, as long as the result has no measurable effect on the hole, actually contains a small amount of foreign matter.
「基座（base)」或「基材（substrate)」意指承載研磨 材料之拋光墊調整器的一部份，而該研磨材料可貼附於該 基座或基材，或可從該基座或基材延伸出來。本發明所用 的基材可為任何形狀、厚度或材料，其可用足以讓一拋光 墊調整器達成所欲達到之目的的方式承載研磨材料。基材 可為實心材料、粉末材料（加工後成為實心）或可撓性材料 (flexible material)。典型基材的例子包括但不限制於金屬、 金屬合金、陶瓷、相對硬的聚合物或其他有機材料、玻璃 及其混合物。再者，該基材可包括能幫助研磨材料附著在 該基材上的材料，包括但不限制在硬焊合金材料、燒結助 劑等。該基材和研磨切割元件在一些實施例中能從相同的 材料中形成’且可從一整合、單片材料中形成。 「研磨輪廓（abrasive profile)」能被了解是指藉由能 用於從CMP拋光墊移除材料之研磨材料所定義的形狀或 空間。研磨輪廓的例子包括但不限制在矩形、一端漸細= 矩形、截面為楔形的形狀和楔形等。在一些實施例中卷 材科從CMP拋光墊移除， 面時，藓由太路CMP拋光墊被定向視為-平 Γ ^磨呈現的研磨輪廟是明顯的。 戈莫氏：：(SUPerhard)」係指具有任何結晶、或多晶材料 孑莫氏硬度（Moh「，S hardnessu % A + i 合物。在此… 叫大約8或大於8之材料的混 :-些態樣中’莫氏硬度可等於或大於9.5,這種 ^包括但不限制於鑽石、多晶鑽石（pcD)、立方氮化蝴 (N)、夕晶立方氮化硼（PcBN)、金剛砂（咖論叫和藍 ’以及其他所屬技術領域中具有通常知識者所知的超 ，材料。超硬材料能以各種不同的形式（包括顆粒、沙襟、 薄膜、層狀結構、片狀、片段等）與本發明結合。在一些情 形中’本發明之超硬材料係採多晶超硬材料的形式，如pcD 和P c B N材料。 「有機材料（organic materia丨）」是指有機化合物的半 固體或固體複合無晶形混合物。其中，「有機材料層」和 「有機材料基質」可互換使用，係指一層或一團有機化合 物的半固體或固體複合無晶形混合物，較佳的是，有機材 料係由一或多個單體進行之聚合反應所形成的聚合物或共 聚合物。 「顆粒（particle)」和「磨礫（gm)」能互換使用。 「研磨體（abrasive)」描述能夠從CMP拋光墊移除（如 切割、拋光、刮落（seraping))的各種結構，一研磨體能包 括其上或其内部具有許多切割點、脊、平台的塊體。值得 注意的是這種切割點、脊、平台可形成有許多凸部或凹部 而涵蓋在該塊體裡。再者，一研磨體可包括複數個獨立的 1356449 研磨顆粒，其僅具有形成在其上或表面的一切冑點、脊或 平台。一研磨體也可包括複合塊體，如PCD片、片段或 坯料（blank)，可個別包括研磨層或共同包括研磨層。’ 這裡所述的複數個物品、結構元件、組成元素和/或材 料’基於方便可出現在一般的常見列舉中，然而這些列舉 可解釋為列舉中的單一構件單獨或個別地被定義，因此若 僅根據構件在一般群體中的呈現，忽略其相反的表示，此 列舉中沒有單一構件可以在事實上與其他構件被解釋為相 同。 濃度、數量、顆粒粒徑、體積以及其他數值上的資料 可是以範圍的形式來加以呈現或表示，而需要瞭解的是這 種範圍形式的使用僅基於方便性以及簡潔，因此在解釋 時’應具有相當的彈性’不僅包括在範圍中明確顯示出來 以作為限制之數值，同時亦可包含所有個別的數值以及在 數值範圍中的次範圍’如同每一個數值以及次範圍被明確 地引述出來一般。 例如一個數值範圍「約1以m到約5〆m」應該解釋 成不僅僅包括明確引述出來的大約到大約同 時還包括在此指定範圍内的每一個數值以及次範圍，因 此’包含在此一數值範圍中的每一個數值，例如2、3及4, 或例如1 -3、2·4以及3-5等的次範圍等，也可以是個別的 1 ' 2 ' 3 ' 4和5。此相同原則適用在僅有引述一數值 的範圍中’再者，這樣的闡明應該能應用在無論是一範圍 的幅度或所述的特徵中。 1356449 本發明 本發明提供用於調整CMP拋光墊的系統與方法，以 大大地改善CMP拋光墊調整程序的品質，也降低與其相 關的成本和廢棄的速率。一般而言，本發明之系統和方法 在拋光墊調整器和CMP拋光墊之間提供良好的切割界面， 以降低為維持切割（例如調整）CMP拋光墊所需的壓力或應 力值。在既有情況中，當修整該拋光墊時，現有的CMp 拋光墊修整或調整方法係施加大量的下壓力量至拋光墊修 整器。 乂 該下壓的力量導致拋光墊材料的壓縮。當拋光墊材料 通*為 相對柔軟的材料（如聚胺基曱酸乙酉旨 (polyu「ethane))時’該下壓的力量經常導致該拋光墊材料 更僵硬’而比處於非壓縮狀state)下 更難以切割。而該被壓縮的拋光墊材料相對地難以平順且 均勻地切割，常常撕裂為大片狀而導致在CMP拋光墊形 成粗缝表面，該粗糙表面會損壞之後將由拋光墊調整的矽 晶圓。 既有的鑽石拋光墊修整器常常包括能以負角度切割軟 的CMP拋光墊之「鈍的（du||)」鑽石尖端，所謂的負角度 是既有用於指當尖端從被研磨的表面通過時，相對於施加 在拋光墊之一磨光（finished)表面之角度大於90度。因此， 該相對柔軟的拋光墊一定會在被該鑽石尖端刺穿前被壓 縮，而導致嚴重的形變（彈性形變和塑性形變）》由於所造 成的拖力（dragging)和撕裂力（tearing)，使得維持在該拋 1356449 光墊的切割路徑形成具有不同寬度和深度的缺口 β 本發明能夠讓複數個切割尖端以最小的破裂性刺穿軟 性拋光墊。當CMP拋光墊修整器變得更軟且更柔和時， 本發明的特徵就變得更重要了，以避免在拋光時損害（如毁 壞（dishing)、腐蝕、刮損）敏銳的積體電路（丨〇。一些新的 拋光墊（如Room Haas' Eco Vision)在與1C晶圓的接觸面 具有大量的磁力，所以在拋光墊修整時的切割必須乾淨且 有效率。 描述於第三圖的概念是顯示既有切割元件（16b)結合於 一 CMP拋光塾基座（14)。最初，既有的切割元件（16b)包 括一切割面（18b)，其相對於施用在該拋光墊的磨光表面有 一大於90度的角度(當該切割元件從該磨光表面移除 時’相對於該施加在拋光墊的磨光表面有時是指負的切割 角度）。當該切割元件（16b)是被下壓至該拋光墊時，該拋 光墊材料會產生塑形形變，而變得更堅硬以回應施加在拋 光墊材料的力量，因此，切割該拋光墊材料變得更困難， 導致被切割的產品在該拋光塾上產生一粗糖且不均勻的表 面。 本發明藉由減少該拋光墊調整器和CMP拋光塾之間 的下壓力量來處理這個問題。結果，該CMP拋光塾留下 的調整表面比使用既有方法所得的更為平滑且平坦。 如圖所示，於本發明的一實施例中，係提供一拋光墊 調整器（12)從一 CMP拋光墊基座（14，從第三b至三D圖） 移除材料，並讓CMP拋光墊的壓縮最小化。該調整器包 1356449 括一基座（14)以及從該基材延伸出來之複數超硬切割元件> (6)最佳的疋從第二B圖來看，該切割元件各具有一切 面（18)其相對於施用在CMP拋光墊之磨光表面有等於 或小於90度的角度（如，該切割面相對於該磨光&㈣ —有時是指正的切割角度）。該切割元件（16)的切割面（18) 向’以使得㈣光塾調整器（在第三B圖所指（22)之 方向）以及該CMP拋光墊的相對移動使得材料倒落地從具 切割面之CMP拋光墊移除，以調整該〇Μρ拋光墊。 藉由調整該切割面（18)相對施用於拋光墊基座（14)之 磨光表面的角度^^ 落地從該拋光塾上刮除一層拋光墊材料，所得之施用於抛 光墊的表面就能夠安全地使用在CMp程序中，而不會破 壞昂貴的矽晶圓。本發明之拋光墊調整器能夠用於均勾且 非常淺地從該拋光㈣除—薄層材料，並且錢光塾上留 下乾淨、平滑且均勻磨光的表面，此技術可用於移除能 夠形成在CMP拋光墊之表面的光油薄層。"base" or "substrate" means a portion of a polishing pad adjuster that carries an abrasive material to which the abrasive material can be attached or from which the base can be attached The seat or substrate extends. The substrate used in the present invention can be of any shape, thickness or material that can carry the abrasive material in a manner sufficient for a polishing pad adjuster to achieve the desired purpose. The substrate may be a solid material, a powder material (solid after processing) or a flexible material. Examples of typical substrates include, but are not limited to, metals, metal alloys, ceramics, relatively hard polymers or other organic materials, glasses, and mixtures thereof. Further, the substrate can include materials that aid in the attachment of the abrasive material to the substrate, including but not limited to brazing alloy materials, sintering aids, and the like. The substrate and abrasive cutting elements can be formed from the same material in some embodiments' and can be formed from an integrated, monolithic material. By "abrasive profile" it is understood to mean the shape or space defined by the abrasive material that can be used to remove material from the CMP pad. Examples of the abrasive profile include, but are not limited to, a rectangle, a tapered one end = a rectangle, a wedge-shaped shape, and a wedge shape. In some embodiments, the web is removed from the CMP pad, and when viewed from the surface, the CMP pad is oriented as a flat wheel.戈莫氏::(SUPerhard)" means a Mohs hardness of any crystalline or polycrystalline material (Moh", S hardnessu % A + i. Here, a mixture of materials of about 8 or greater: - In some cases, the Mohs hardness can be equal to or greater than 9.5. This includes, but is not limited to, diamond, polycrystalline diamond (pcD), cubic nitride butterfly (N), solar crystal cubic boron nitride (PcBN), Emery (Cai's and Blue' and other super-materials known to those of ordinary skill in the art. Superhard materials can be in a variety of forms (including particles, satay, film, layered structure, sheet, Fragments, etc. are combined with the present invention. In some cases, the superhard material of the present invention is in the form of a polycrystalline superhard material such as pcD and Pc BN materials. "Organic material (organic materia)" refers to an organic compound. A semi-solid or solid composite amorphous mixture, wherein "organic material layer" and "organic material matrix" are used interchangeably to mean a semi-solid or solid composite amorphous mixture of one or a group of organic compounds, preferably, Organic materials Or a polymer or a copolymer formed by polymerization of a plurality of monomers. "Particles" and "gravel (gm)" can be used interchangeably. "abrasive" describes the ability to polish pads from CMP. Various structures (such as cutting, polishing, seraping) are removed, and an abrasive body can include a block having a plurality of cutting points, ridges, and platforms thereon or therein. It is worth noting that the cutting point, the ridge, The platform may be formed with a plurality of protrusions or recesses in the block. Further, an abrasive body may comprise a plurality of individual 1356449 abrasive particles having only any defects, ridges or platforms formed thereon or on the surface. An abrasive body may also comprise a composite block, such as a PCD sheet, segment or blank, which may individually comprise an abrasive layer or collectively comprise an abrasive layer. 'The plurality of articles, structural elements, constituent elements and/or described herein. Materials may be present in a common list of generals based on convenience, however these enumerations may be interpreted as a single component in the list being defined individually or individually, so if only based on the component in the general population Now, ignoring the opposite representation, no single component in this list can be interpreted as being identical to other components. The concentration, quantity, particle size, volume, and other numerical data can be presented in the form of a range or Representation, but need to understand that the use of this range of forms is based on convenience and simplicity, so 'should be quite flexible' in the interpretation, not only includes the value explicitly shown in the scope as a limit, but also includes all Individual values and sub-ranges in the range of values are as explicitly recited as each value and sub-range. For example, a range of values "about 1 m to about 5 m" should be interpreted to include not only explicit descriptive Each of the numerical values and the sub-ranges within the specified range are also included, and are therefore included in each of the numerical ranges, such as 2, 3, and 4, or, for example, 1 -3, 2·4. And the sub-range of 3-5, etc., can also be individual 1 ' 2 ' 3 ' 4 and 5. This same principle applies to the range in which only one value is recited. ' Again, such clarification should be applicable to either a range of magnitudes or the described features. 1356449 The present invention provides systems and methods for adjusting CMP pad to greatly improve the quality of the CMP pad adjustment process and also reduce the associated cost and waste rate. In general, the system and method of the present invention provides a good cutting interface between the polishing pad conditioner and the CMP pad to reduce the pressure or stress values required to maintain the cutting (e.g., conditioning) CMP pad. In the prior art, when trimming the polishing pad, the existing CMp pad dressing or adjustment method applies a large amount of downforce to the pad conditioner.乂 The force of the depression causes compression of the polishing pad material. When the polishing pad material is a relatively soft material (such as polyu "ethane"), the force of the pressing often causes the polishing pad material to be stiffer than in an uncompressed state. It is more difficult to cut under. The compressed polishing pad material is relatively difficult to cut smoothly and evenly, often tearing into a large sheet shape, resulting in a rough surface formed on the CMP polishing pad, which will be adjusted by the polishing pad after the rough surface is damaged. The enamel wafers. Existing diamond pad dressers often include a "blunt (du||)" diamond tip that can cut a soft CMP pad at a negative angle. The so-called negative angle is used both to refer to the tip when When the surface being polished passes, the angle is greater than 90 degrees with respect to the finished surface applied to one of the polishing pads. Therefore, the relatively soft polishing pad must be compressed before being pierced by the diamond tip, resulting in severe deformation (elastic deformation and plastic deformation) due to dragging and tearing (tearing) Thus, maintaining the cutting path of the throwing 1356449 optical pad to form notches β having different widths and depths The present invention enables a plurality of cutting tips to pierce the soft polishing pad with minimal rupture. As the CMP pad dresser becomes softer and softer, the features of the present invention become more important to avoid damage (such as dishing, corrosion, scratching) of sharp integrated circuits during polishing (丨〇 Some new polishing pads (such as Room Haas' Eco Vision) have a large amount of magnetic force on the contact surface with the 1C wafer, so the cutting must be clean and efficient when the polishing pad is trimmed. The concept described in the third figure It is shown that the existing cutting element (16b) is bonded to a CMP polishing crucible base (14). Initially, the existing cutting element (16b) includes a cutting surface (18b) that is polished relative to the polishing pad applied thereto. The surface has an angle greater than 90 degrees (when the cutting element is removed from the polishing surface) is sometimes referred to as a negative cutting angle relative to the polishing surface applied to the polishing pad. When the cutting element (16b) is When pressed down to the polishing pad, the polishing pad material deforms and becomes harder in response to the force applied to the polishing pad material, thus cutting the polishing pad material becomes more difficult, resulting in being cut The product is in the polished 塾Producing a rough sugar and uneven surface. The present invention addresses this problem by reducing the amount of downforce between the polishing pad conditioner and the CMP polishing pad. As a result, the CMP polishing pad leaves an adjustment surface that is more than the existing method. The resulting smoother and flatter. As shown, in one embodiment of the invention, a polishing pad adjuster (12) is provided from a CMP pad base (14, from a third b to a third D Remove material and minimize compression of the CMP pad. The adjuster package 1356449 includes a pedestal (14) and a plurality of superhard cutting elements extending from the substrate. (6) Best 疋In the second B-picture, the cutting elements each have a face (18) that has an angle equal to or less than 90 degrees with respect to the buffed surface applied to the CMP pad (eg, the face is relative to the buff & (4) - sometimes refers to a positive cutting angle.) The cutting face (18) of the cutting element (16) is 'to make the (four) stop adjuster (in the direction of the second B (22)) and the CMP pad Relative movement of the material causes the material to fall down from the CMP polishing pad with the cut surface To adjust the 抛光ρ polishing pad. By adjusting the angle of the cutting surface (18) relative to the polishing surface applied to the polishing pad base (14), a polishing pad material is scraped off the polishing pad. The surface applied to the polishing pad can be safely used in the CMp process without damaging the expensive germanium wafer. The polishing pad adjuster of the present invention can be used for both hooking and very shallow removal from the polishing (four) The layer material, and the clean, smooth and evenly polished surface on the money light, can be used to remove a thin layer of varnish that can be formed on the surface of the CMP pad.
定向圖中所示的切割面(18)於一角度^，其為相對於 用在該CMP拋光墊之磨光表面約9〇度的角度。定向第三 D圖的切割面(18a)於一角〜其係相對於施用在該cMp MUM®# 9Q度的角度，大約為60度。該切 ^面可定向於各種角度’Μ —實施财，能夠相對於用 在該CMP拋光塾之磨光表面從約45度至約9〇度。發現 角度的減少能夠在該切割元件和該拋光塾之間產生尖銳的 切割界面》 1356449 °月參看第二D圖的切割元件（16a)以及顯示於第七圖 之顯微照片的切割元件，該切割元件能包括—遠端部（如離 該抛光塾調整器t 之基材最运的部份）以及一近端部（如離該 基材最近的部份）。該遠端部的截面比該近端部的截面寬， 換句話說’在本發明—些實施例中，該切割it件向外（在一 或夕個方向)朝最底部(如與該拋光墊結合的部份)呈喇叭 狀以此方式，該切割面的角度能夠降低至度以下。 ,個實轭例到另一個實施例能夠有多種不同的切割 面角度。在一態樣中，此切割角度是大約90度；在另一 態樣中，該切割角度能夠稿為大於90度，而呈95度、1〇〇 度和一個範圍及其所包含的各個數值（如9〇_92度，93_97 又等）且增加的數值係落在這些數值之間；又於另一離樣 中，該切割角度能夠小於約9〇度、小於約8 : ^度、小於約7。度、小於約65度、小於約= 的各個數值（如6〇JL9〇度），且增加的數值 係洛在34些數值之間。 顯示於第二D圖的切宝j矛杜, 尘 °件6 )包括一朝外持續變 尖銳的切割面，必須了 伸(相誓… M 了解的疋該切割元件能夠朝下延 顯示在圖中的方向)一段距離1到朝外呈，八 r提二：第七圖所示的範例，一彎曲或棋形的斜面 月匕挺供作為切割面。 第二B與三d圖描述本發明夕 括一 A 不發月之一態樣，該切割元件包 緣Μ243”其實f上平行於該，拋光塾 先表面。然而’在另一實施例中，如表示於第三C圖 1356449 的範例，該切割元件（1 6g)能包括一延伸邊緣（24c)，其在 該CMP磨光表面以及切割元件之間提供一凸出區域，在 此情形下，刀片之切割邊緣（26c)的尖銳度能夠增加，而不 需要使該切割面（18C)有斜度或使逐漸變細。The cut surface (18) shown in the orientation pattern is at an angle which is about 9 degrees relative to the polished surface used in the CMP pad. The cutting face (18a) of the third D-direction is oriented at an angle of about 60 degrees with respect to the angle of application of the cMp MUM® #9Q. The cut surface can be oriented at various angles, from about 45 degrees to about 9 degrees, relative to the polished surface used in the CMP polishing crucible. It is found that the reduction in angle enables a sharp cutting interface between the cutting element and the polishing crucible. 1356449 ° see the cutting element (16a) of the second D diagram and the cutting element shown in the photomicrograph of the seventh diagram, The cutting element can include a distal end portion (e.g., the portion most distant from the substrate of the polishing crucible adjuster t) and a proximal end portion (e.g., the portion closest to the substrate). The cross section of the distal end portion is wider than the cross section of the proximal end portion, in other words 'in the present invention - in some embodiments, the cutting member is outward (in one or the other direction) toward the bottom (as with the polishing The mating portion of the mat is flared in such a manner that the angle of the cut surface can be reduced below a degree. A solid yoke example to another embodiment can have a variety of different cutting surface angles. In one aspect, the cutting angle is about 90 degrees; in another aspect, the cutting angle can be greater than 90 degrees, and is 95 degrees, 1 degree, and a range and the values it contains. (eg 9〇_92 degrees, 93_97 and so on) and the added value falls between these values; in another sample, the cutting angle can be less than about 9 degrees, less than about 8: ^ degrees, less than About 7. Degree, less than about 65 degrees, less than about = each value (such as 6 〇 JL9 〇), and the added value is between 34 values. The cut treasure j spears shown in the second D picture, the dust part 6) includes a cutting surface that continues to sharpen outwards, and must be stretched (move... M understands that the cutting element can be displayed downward in the figure) The direction in the middle) is a distance of 1 to the outside, and eight is the second: the example shown in the seventh figure, a curved or chess-shaped beveled moon is used as the cutting surface. The second and third graphs depict one aspect of the present invention, in which the cutting element envelops 243" to be parallel to the polishing surface. However, in another embodiment, As shown in the example of the third C-Fig. 1356449, the cutting element (16g) can include an extended edge (24c) that provides a raised area between the CMP buffing surface and the cutting element, in which case The sharpness of the cutting edge (26c) of the blade can be increased without the need to make the cutting face (18C) sloped or tapered.
除此之外，如顯示於第一圖的切割元件（16)通常呈齒 狀，且各別成突出狀，則在本發明一些實施例中，該切割 疋件能包括切割刀片。此實施例係顯示於第二圖作為範 例，其中切割元件（16d)或刀片係被排列橫跨於基座（彳牝) 的面。當該切割刀片沒有那麼講究時，則該切割刀片具有 切割長度「L」’其至少是一切割高度(第五圖$「d」） 的兩倍。該切割刀片有助於使用在每一次運作時移除大部 分的拋光墊材料。該切割刀片也能包括沿著該切割刀片之 長度不同而有不同的切割角纟，且能包括在其上形成或與 其連接的齒狀結構。錯齒狀突起以及凸出物等也能夠形成 在切割刀片之上或之内，或與該切割刀片結合，以促進該 齒狀物或刀片的切割能力。 本發明之切割元件能以各種不同的方式與基座（14)結 ° °在—實施例中，該切割元件以及該基座係從-整片的 材料片（如夕曰曰鑽石片以及多晶立方氮化硼片等)所形成 的。在另-態樣中，該切割元件係以黏接、焊接或其他方 式與該基座連接。 也可使用各種逆洗碡（reverse castjng)的方式將該切 割元件結合至該基座。例如，可將-間隔層設置於一臨時 基材的工作面’排列該切割元件以使得各切割元件的至少 -15- 割元：部份埋設於該間隔層中。在—態樣中，該切 的尖端Γ3由各種機械原理或方式制，此得該切割元件 ::夠與該臨時基封接觸。以這種方法， 確…塾修整器，切割工具之最終平面的結構(如輪 工且因此該臨時基材能根據想要的拋光墊修整器/切割 等組：輪廓而包括各種角度以及輪廓'平面、斜度、階梯 Φ 可選擇性地施加黏著劑於該臨時基材和/或該間隔層和 3該切割7L件，以助於適當地排列以及暫時的連接。用於 任2所述之表面的黏著劑可為任何於所屬技術領域中具有 通吊知識者所熟知的黏著劑，例如不限制在聚乙烯醇（PVA) =脂、聚乙烯醇縮丁醛（PVB)樹脂、聚乙烯乙二醇（pEG)樹 脂、石蠟臈、酚醛樹脂、石蠟乳化液、丙烯酸樹脂或其組 σ物在一悲樣中’該黏著劑為喷霧式丙烯酸膠。 該間隔層可由任何軟的、可變形的材料所製成，並具 •有相對一致的厚度，並可根據製程、之後的用途、工具前 驅物的組成考量等特別的需求來選擇。可用材料的範例包 括但不限制在橡膠、塑膠、石蠟、石墨、黏土、膠帶、石 墨板材/卷材（g「af0M)、金屬、粉末及其組合。在一態樣中， 該間隔層可為包括金屬或其他粉末或黏接劑（binder)的軋 製片（rolled Sheet)。例如，該金屬可為不鏽鋼粉末以及聚 乙稀乙二醇黏接劑。可使用各種於所屬技術領域中具有通 吊知識者所知的黏接劑，例如但不限制在聚乙烯醇（PVA) 樹脂、聚乙締醇縮丁醛（PVB)樹脂、聚乙烯乙二醇（PEG)樹 • 16· 1356449 脂、石蠟膜、酚醛樹脂、石蠟乳化液、丙烯酸樹脂或其組 合物。 至少部份未硬化的樹脂材料能施加在該間隔層相對於 該臨時基材的位置，能使用一模具（如不鏽鋼或其他材料） 以在製程中保持有該未硬化的樹脂材料。在硬化該樹脂材 料時會形成一樹脂層，以固定至少一部分的切割元件。可 選擇性地將一永久性工具基材連接至該樹脂層，以幫助其 用於修整一 CMP拋光墊或其他用途。在一態樣中，該永 久性基材可以一適當的黏著劑連接至該樹脂層，藉由將該 永久性基材以及樹脂層之間的接觸面粗糙化以幫助連接。 在一態樣中，該永久性基材能結合該樹脂材料，且因硬化 而連接至該樹脂層/ 一但該樹脂硬化，則該模具以及該臨 時基材就依序從該CMP拋光墊修整器移除，除此之外， 該間隔層能從該樹脂層移除，其係可藉由任何於所屬領域 中具有通常知識者所熟知的方式來完成，例如削除 (peeling)、磨碾（grinding)、喷砂清除（sandb丨的丨丨叫）、刮 除（scrap丨ng)、摩擦（mbbing)、磨蝕（abrasi〇n)等，因此該 切割元件自該樹脂突出的凸出物是依賴於被該間隔層覆蓋 或隱藏的量。除此之外，該切割元件的排列能藉由樹脂相 對固定，因此，該切割元件能以各種型態放置，因此一組 合工具之表面能創造出各種型態》 該切割元件能以各種不同的方式所形成。如上所述， 一實施例包括由多晶鑽石片或多晶立方氣化硼片形成切割 元件’各切割元件能從該片狀結構所形成並結合至該基 •17· 1356449 座’或該基座與切割元件能從一整片的片狀結構所形成。 在另一態樣中，該切割元件能藉,由使燒結的鋁板具有 從其延伸有切割元件之基本形狀而形成。一類鑽碳（DLC) 層能塗佈於產生圖案的表面；化學氣相沉積鑽石 CVDD(Chemical Vapor Deposition Diamond)能塗佈於陶 瓷的圖案表面；除此之外’能使用一燒結的碳化矽（SiC)板 (具有用於滲入孔洞之溶融的石夕）。在另一實施例中，也可 用燒結的氮化矽（Si3N4) 〇 除此之外，還可用其他材料單獨或與另外的材料結合 來作為切割元件，其皆可包括在此所述的範疇中。例如， 該切割元件包括或實質上由以下物質所組成：陶瓷或其他鑽 石或立方氮化蝴薄膜，包括那些經由化學氣相沉積法（CVD) 所/儿積的薄膜’可用於作為切割元件之陶竟非限制的範例 包括氧化铭（alumina)、碳化 |呂（aluminum carbide)、二氧 化石夕（silica)、碳化矽（siMcon carbide)、氮化矽（sUjc〇n nitride)、氧化锆（zirconia)、碳化鍅（Zjrconjum carbide)及 其混合物。在一實施例中，切割元件為燒結團、部分燒結 團和/或根據所屬技術領域中具有通常知識者所知的方法結 合至該工具前驅物之基座的材料層。在一態樣中，該切割 元件能包括複數材料（可選擇包括黏著劑顆粒）的混合物°、 均混物（h〇m〇geneous)或其他。在另一態樣中，該切割元 件包括複數材料層。如一非限制性的範例中，該切割元件 能包括被CVD鑽石包覆的陶莞。 如第五圖所示，各切割元件（16)包括一個或複數個排In addition to this, as the cutting elements (16) shown in the first figure are generally toothed and individually projecting, in some embodiments of the invention, the cutting elements can comprise cutting blades. This embodiment is shown in the second figure as an example in which the cutting element (16d) or the blade system is arranged across the face of the base (彳牝). When the cutting blade is not so elaborate, the cutting blade has a cutting length "L" which is at least twice the cutting height (fifth figure "d"). The cutting blade facilitates the use of most of the polishing pad material removed during each operation. The cutting blade can also include different cutting angles along the length of the cutting blade and can include a toothed structure formed thereon or attached thereto. Misaligned dentations as well as projections and the like can also be formed on or in the cutting blade or in combination with the cutting blade to facilitate the cutting ability of the tooth or blade. The cutting element of the present invention can be attached to the base (14) in a variety of different manners. In the embodiment, the cutting element and the base are from the entire piece of material (such as a matte diamond piece and Formed by crystalline cubic boron nitride sheets, etc.). In another aspect, the cutting element is attached to the base by bonding, soldering or other means. The cutting element can also be bonded to the base using a variety of reverse wash. For example, the cutting element can be arranged with a spacer layer disposed on a working surface of a temporary substrate such that at least a -15-cut element of each cutting element is partially embedded in the spacer layer. In the aspect, the cut tip Γ 3 is made by various mechanical principles or means, so that the cutting element :: is sufficiently in contact with the temporary base seal. In this way, it is... the finisher, the final planar structure of the cutting tool (such as the wheeling and therefore the temporary substrate can include various angles and contours depending on the desired set of polishing pad conditioner/cutting: contours) The plane, the slope, the step Φ can selectively apply an adhesive to the temporary substrate and/or the spacer layer and the cut 7L to facilitate proper alignment and temporary connection. The surface adhesive can be any adhesive known to those skilled in the art, such as not limited to polyvinyl alcohol (PVA) = fat, polyvinyl butyral (PVB) resin, polyethylene B. A diol (pEG) resin, a paraffin wax, a phenolic resin, a paraffin emulsion, an acrylic resin or a group σ thereof in a sad sample. The adhesive is a spray acrylic adhesive. The spacer layer can be any soft or deformable. Made of materials, with a relatively uniform thickness, and can be selected according to the special needs of the process, the subsequent use, the composition of the tool precursors, etc. Examples of available materials include, but are not limited to, rubber, plastic, Paraffin, graphite, clay, tape, graphite sheet/coil (g "af0M"), metal, powder, and combinations thereof. In one aspect, the spacer layer may comprise a metal or other powder or binder. Rolled sheet. For example, the metal may be a stainless steel powder and a polyethylene glycol adhesive. Various adhesives known to those skilled in the art may be used, for example, but not Restricted to polyvinyl alcohol (PVA) resin, polybutylene butyral (PVB) resin, polyethylene glycol (PEG) tree • 16· 1356449 grease, parafilm, phenolic resin, paraffin emulsion, acrylic resin or a composition. At least a portion of the uncured resin material can be applied to the spacer layer relative to the temporary substrate, and a mold (such as stainless steel or other material) can be used to retain the uncured resin material during the process. A resin layer is formed to harden the resin material to fix at least a portion of the cutting element. A permanent tool substrate may be selectively attached to the resin layer to aid in trimming a CMP polishing. Or other uses. In one aspect, the permanent substrate may be attached to the resin layer with a suitable adhesive to aid in bonding by roughening the contact surface between the permanent substrate and the resin layer. In one aspect, the permanent substrate can be bonded to the resin material and bonded to the resin layer by hardening/but the resin is hardened, the mold and the temporary substrate are sequentially removed from the CMP pad dresser. Removal, in addition to this, the spacer layer can be removed from the resin layer, which can be accomplished by any means well known to those of ordinary skill in the art, such as peeling, grinding (grinding) ), sandblasting (sandb丨), scraping, friction, abrasi〇n, etc., so the protrusion of the cutting element protruding from the resin is dependent on The amount that is covered or hidden by the spacer layer. In addition, the arrangement of the cutting elements can be relatively fixed by the resin, so that the cutting elements can be placed in various types, so that the surface of a combination tool can create various types. The cutting elements can be variously different. The way it is formed. As described above, an embodiment includes forming a cutting element from a polycrystalline diamond sheet or a polycrystalline cubic vaporized boron sheet. Each cutting element can be formed from the sheet structure and bonded to the base. The seat and cutting elements can be formed from a single sheet-like structure. In another aspect, the cutting element can be formed by having the sintered aluminum sheet have a basic shape from which the cutting element extends. A type of drilled carbon (DLC) layer can be applied to the patterned surface; a chemical vapor deposited diamond CVDD (Chemical Vapor Deposition Diamond) can be applied to the surface of the ceramic pattern; otherwise, a sintered tantalum carbide can be used ( SiC) plate (having a molten stone for infiltration into the hole). In another embodiment, sintered tantalum nitride (Si3N4) may also be used, and other materials may be used alone or in combination with another material as the cutting element, which may be included in the scope described herein. . For example, the cutting element comprises or consists essentially of a ceramic or other diamond or cubic nitride film, including those films which are deposited by chemical vapor deposition (CVD), which can be used as cutting elements. Examples of non-limiting examples of pottery include alumina, carbonized carbide, silica, siMcon carbide, sUjc〇n nitride, and zirconia. ), Zjrconjum carbide and mixtures thereof. In one embodiment, the cutting element is a sintered mass, a partially sintered mass, and/or a layer of material bonded to the base of the tool precursor according to methods known to those of ordinary skill in the art. In one aspect, the cutting element can comprise a mixture of a plurality of materials (optionally including adhesive particles), a homomix (h〇m〇geneous) or the like. In another aspect, the cutting element comprises a plurality of layers of material. As a non-limiting example, the cutting element can comprise a pottery covered with CVD diamond. As shown in the fifth figure, each cutting element (16) includes one or more rows
:般平面（21)的切割邊緣（26)。因此’各切割元件能 勺。括四個切割邊緣，其各用來將材料從工作件切割或创 除。藉由涵蓋各具有複數切割邊緣之複數個切割元件則 有助於增加各切割元件之切割邊緣的總長。除此之外由 於：切割元件相對於該基座之工作面來說具有實質上相同 的问度，因此所有切割元件之所有切割邊緣皆對齊排列於 同樣的-般平面，藉由將各切割元件排列於一般平面，嗜 切割裝置首先可實質上自我對準（缕却吟以刮除該 =件較高的區域，接著持續切割直到削減所有工作件之 「尚」點，而留下一平滑且平坦的工作件表面。 本發月之切割裝置除了發現能有效修整CMp拋光塾 卜也倉b用於許多其他應用，包括用於實質上创平易碎材 料’如梦晶圓、玻項片、金屬、藉由创平⑻anarizat|.〇n): The cutting edge (26) of the plane (21). Therefore, each cutting element can be spooned. Four cutting edges are included, each of which is used to cut or create material from the workpiece. By covering a plurality of cutting elements each having a plurality of cutting edges, it is advantageous to increase the total length of the cutting edges of the respective cutting elements. In addition, since the cutting elements have substantially the same degree of difficulty with respect to the working surface of the base, all cutting edges of all cutting elements are aligned in the same general plane, by cutting the cutting elements Arranged in a general plane, the wadding device can first be substantially self-aligned (缕 吟 刮 to scrape the = higher area, then continue cutting until the "shang" point of all work pieces is cut, leaving a smooth and Flat work piece surface. This month's cutting device has been found to be effective in trimming CMp polishing. It is also used in many other applications, including for virtually flattenable fragile materials such as Dream Wafer, Glass, Metal. By creating a flat (8) anarizat|.〇n)
回收再利用已用過㈣晶圓、LCD玻璃、LED基材、碳化 石夕晶圓、石英晶圓、氮化石夕、氧化錯等。在既有的石夕晶圓 加工技術中’被拋光的晶圓通常由定位於一抛光塾之載具 (carrier)所承載’該拋光塾係連接於一旋轉平台上。當研 磨液施加於該拋光墊，而壓力施加於該載具時，該晶圓能 具的相對移動而被抛光’因此’石夕晶圓 月b藉由非常細小的研^麻φ. 研磨枓貫質上被磨輾（grind)或拋光以形 成相對平滑的表面。 田夕日日圓的磨光已有一些進展時，磨光材料（如矽 曰曰圓）㈠出現從材料主體上撕裂或挖鑿一片材料’導致比 心要的拋光結果差’這是因為(至少部分原因)磨光或研磨 1356449 程序使用具有極尖銳點的研磨材料（這些尖銳點常常不是相 互齊平）之事實’以使得壓力局部化，讓研磨料將材料從工 作件移除。 與既有的抛光或磨光程序相反，本發明使用一個或更 多具有大銳角度之切割邊緣的切割元件，以從一工作件切 割材料，來拋光或整平該工作件之表面。通常當一切割動 作作用於一材料上時，則切割的區域能夠可塑地變形或以 碎裂的方式破裂。若該可塑地變形比破裂擴及的速度慢， 則可知該材料係易碎的；反之則為可延展的變形體。然而， 當在高壓情況時，破裂擴及的速率會被抑制，在此情況下， -易碎材料（如到可存在有更多的延展特，如同軟的金 屬。當本發明之尖銳切割邊緣被壓入易碎矽的表面時，第 -接觸點的面積係極小的(如數個奈米），結果，壓力變的 非常高（如好幾十億帕（GPa))，由於破裂被抑制了，該尖銳 鑽石邊緣能可變形地穿切。結果，外部能量能持續地傳 遞至非常小體積之矽’ α承受該延性切割"㊀ cu_g);換句話說’該尖銳的切割邊緣能以—種前所未有 的方式刮除或刨平矽。 2本發明使用PCD或PGBN片時，所製成的切割元 變使得該切割元件在壓入-晶圓時幾乎無法 量太：常是能量濃度的測量方法，如每體積的能 發明之PCB或PcBN片能夠集 體積而不會破裂，這些材料也能：,至非“、的 隹持，這是因為其能將-邊緣保持在幾個原子之内。 1356449 當矽的延展性藉由施壓於一非常小的體積而得以維持 時，通常能相對地保有小的穿透半徑，其係示範於第五圖， 其中該切割元件（16)之深度（或高度）通常以「d」字母來表 示，且約為0.1毫米（mm卜除此之外’該切割邊緣的形狀 一定要保持為相對地尖銳；在一些情形中，其半徑約為2 奈来（nm)。為了符合這兩項特性，本發明之切割邊緣的材 料是硬的，足以承受在切割或刨平步驟中的變形，以此方Recycling has been used (4) wafers, LCD glass, LED substrates, carbon carbide wafers, quartz wafers, nitride nitride, oxidation faults, etc. In the existing Shihwa wafer processing technology, the 'polished wafer is typically carried by a carrier positioned on a polished crucible' which is attached to a rotating platform. When the polishing liquid is applied to the polishing pad, and the pressure is applied to the carrier, the wafer can be polished by relative movement. Therefore, the stone b is polished by a very fine grinding method. The grain is grinded or polished to form a relatively smooth surface. When there is some progress in the polishing of the Tianxi Rien, the polishing material (such as the round) (1) appears to tear or dig a piece of material from the main body of the material, resulting in poor polishing results than the heart. This is because (at least Part of the reason) polishing or grinding 1356449 The procedure uses the fact that abrasive materials with very sharp points (these sharp points are often not flush with each other) to localize the pressure, allowing the abrasive to remove material from the workpiece. In contrast to existing polishing or polishing procedures, the present invention uses one or more cutting elements having sharp edges at large sharp angles to cut material from a workpiece to polish or level the surface of the workpiece. Typically, when a cutting action is applied to a material, the area of the cut can be plastically deformed or broken in a fragmented manner. If the plastic deformation is slower than the speed at which the crack propagates, it is known that the material is fragile; otherwise, it is a malleable deformable body. However, when in the case of high pressure, the rate of crack propagation is inhibited, in which case - fragile material (eg, there may be more ductility, like a soft metal. When the sharp cutting edge of the present invention When pressed into the surface of the fragile crucible, the area of the first contact point is extremely small (such as several nanometers), and as a result, the pressure becomes very high (such as several billion Pascals (GPa)), which is suppressed due to cracking. The edge of the sharp diamond can be deformed and cut. As a result, the external energy can be continuously transmitted to a very small volume α 'α to withstand the ductile cutting " a cu_g); in other words, the sharp cutting edge can be - Unscrew or plan the raft in an unprecedented way. 2 When the present invention uses a PCD or PGBN sheet, the resulting cut element makes the cutting element almost incapable of being pressed into the wafer: often a measure of energy concentration, such as each volume of the inventible PCB or PcBN sheets can be packed in volume without breaking, and these materials can also be: ~, not holding, because it can keep the edge within a few atoms. 1356449 When the ductility of the crucible is exerted by pressure When a very small volume is maintained, a small penetration radius is generally relatively maintained, which is illustrated in the fifth diagram, wherein the depth (or height) of the cutting element (16) is usually in the letter "d". Said, and about 0.1 mm (mm), the shape of the cutting edge must be kept relatively sharp; in some cases, the radius is about 2 nanometers (nm). In order to meet these two characteristics The material of the cutting edge of the present invention is hard enough to withstand deformation during the cutting or planing step,
法，可知該切割元件的尖銳度和硬度能確保該工作部件的 延屐性。 各切割元件（16)包括一實質上平坦的延伸邊緣（24)之 表面，其可界定工作件接觸面積。所有切割元件組合的工 作件接觸面積包括從約該基座總面積的5%至約該基座總 面積的20〇/〇。因此，於本發明之一態樣中，若抛光塾修整 器具有約100mm的直徑，則該切割元件組合的接觸面積 約為該基座總面㈣10%，而所有切割元件之整體接觸面 積即為約7850平方毫米(mm2)e各切割元件之邊緣與面積 的比值可為約4/mm，使得總邊緣長度約為31400 mm。 本發明之切割裝置能被用於濕系統或乾系統。在乾系 統應用中’該切割疋件能用於從_卫作件切割或创平晶 片’而不使用液態研磨液。在一般的應用巾，該切割裝置 係設置在-連接於-旋轉塾塊之支撐墊。該卫作件（如一石夕 晶圓或CMP抛光墊）能連接於一真空墊塊，以令該工作件 旋轉，該旋轉墊塊與該真空塾塊的旋轉可為順時針或逆時 針的方向旋轉’以從該工作件移除材料，而藉由改變一元 1356449 件相對於另一元件的热 凡件的紅轉，則在該工作件之單一旋 Ι = ί或更少的材料’例如’若該工作件與該切割元件" 係朝相同方向旋轉(但以不同的速度)，則比它們朝不同方 向旋轉移除較少的材料。By the method, it is known that the sharpness and hardness of the cutting member can ensure the delay of the working member. Each cutting element (16) includes a surface of a substantially flat extended edge (24) that defines a workpiece contact area. The workpiece contact area for all of the cutting element combinations includes from about 5% of the total area of the base to about 20 〇/〇 of the total area of the base. Therefore, in one aspect of the present invention, if the polishing 塾 dresser has a diameter of about 100 mm, the contact area of the cutting element combination is about 10% of the total surface (four) of the susceptor, and the overall contact area of all the cutting elements is The edge to area ratio of each of the 7850 square millimeters (mm2) e cutting elements can be about 4/mm such that the total edge length is about 31400 mm. The cutting device of the present invention can be used in wet systems or dry systems. In dry system applications, the cutting element can be used to cut or create a wafer from a wafer without the use of a liquid slurry. In a typical application towel, the cutting device is disposed on a support pad that is coupled to the - rotating block. The protective member (such as a Shihua wafer or a CMP polishing pad) can be connected to a vacuum pad to rotate the workpiece, and the rotating block and the vacuum block can rotate in a clockwise or counterclockwise direction. Rotating 'to remove material from the work piece, and by changing the red turn of the one-piece 1356449 piece relative to the hot part of the other element, then a single turn of the work piece = ί or less material 'for example' If the workpiece and the cutting element are rotated in the same direction (but at different speeds), less material is removed than they are rotated in different directions.
在适典型的應用中，施以研磨液有助於剖平該工作件 的表面研磨液可為水性研磨液或化學研磨液。在使用 化學研磨液的情形下，《中的化學物質可被選擇來提供冷 卻或與工作件之表面反應以軟化該工作件，而提供較有： 率的切割程序，並發現石夕晶圓的磨損率會因為該石夕晶圓之 表面軟化而大大地増加，例如，包含氧化齊^ (如冑氧水叶〇⑺ 化學研磨液可用於形成相對高黏度的氧化物，而趨向於「黏 附」在該晶圓表面上，在此情形，本發明之pcD切割裝 置不需要切割晶圓’而是要從晶圓之表面到除該氧化物。 結果，該切割邊緣的尖銳度會變得無關緊要；除此之外， 5亥切割裝置的#命也可i|由使用研磨液而大大地增加，例 如，一 PCD到除器與研磨液一起使用能比pcD切割器延 長1000次的使用次數。 第四圖描述與本發明之一實施例有關的各種切割元件 (1 6g，1 6h，16j)。於本發明之一態樣中，該切割元件製作 (size)並塑型（shape)成具有長方形截面、橢圓截面、圓形 截面、三角形、多邊形、角錐形截面等。各種被製作並塑 型的切割元件能藉由各種切割於該PCD或PcBN片之溝槽 的位置及寬度而形成。該切割元件也能形成在PCD或pCBN 片的表面之下（圖中未示）’以使得該切割元件包括具有例 -22- ^^()449 如圓形或多邊形的嵌入凹槽（inset cavjtjes>。 第六Α及六Β圖描述本發明另一個實施例，其表示形 成在一 PCD基座的複數切割元件（16e，16f)。從第六Α圖 可知，本發明月供從超硬多晶材料一體成形且具有不同 尺寸和配置的切割元件，例如在實施例所顯示的，該較大 的切割元件（16e)可用於切割、刨平或修整元件，而較小元 件（16f)主要係作為「中止（st〇pping)j元件；換句話說， 該較大的切割元件能進一步從該PCD之基座延伸以進一 步或更深入地切割正以該切割元件修整的拋光墊（此圖未 示）。 當該較大切割元件（1 6e)延伸進工作件内夠遠或夠深 時，該較小切割元件能到達工作件之底部的表面（b〇u〇m out)以限制該較大切割元件（16e)更深入該工作件中。為有 助於達到此概念，可將該較大切割元件製造得比該較小切 割元件更尖銳，例如，該較大切割元件能終止於一尖端（與 第三C圖所示的切割元件相似），而該較小切割元件能終 止於平坦的平面（與第三B圖所示的切割元件相似）。以 此方法，該較大切割元件能夠比該較小切割元件更容易切 割該工作件，以使得該較小切割元件可作為深度「十止」 的元件。以此方法，本發明能非常精確地控制該切割元件 切入工作件（如被修整之CMP拋光墊）的深度。 除此之外’當本發明之切割元件能由一整片的多晶超 硬材料所形成，則在該切割裝置之基座上的切割元件之下 保持可用的多晶超硬材料多餘的部份（或形成該切割裝置的 •23- 1356449 =卜因此’在本發明之—態樣中，—旦切割元件在使用 呀鈍或被損害，則該切割元件能藉由移_切以#1 =薄的超硬材料層而被削尖(sharpen)，並形成與當初 i、置面所產生之一樣的圖形。只要有足夠 保持在該切割元件之下，以允許該切割㈣進—步削= 本發月之切割裝置能因此相對地易於削尖或修復。 範例 以下範例敘述本發明之實施例，因此這些範例不能視 為士發明的限制，而係僅適當地教示如何根據本實驗數據 來實施本發明最佳的系統與方法’因&，系統與方法的代 表性數字揭露於此。 一八有燒結之多晶鑽石且與膠結碳化鎢（cemented tungsten ca「bide)基材結合之pCD片係作為用於放電加工 法（Electrical Discharge Machining ’ 日_注料。該圓盤 片具有34mm的直徑（如Adic〇的產品）、52咖（如鳩⑶ 的產品）、60 mm (如Diam〇nd |nn〇vat丨〇ns的產品）、74 (如Eiemem Six的產品）或1〇〇咖（如丁〇_ ma的產 品）。該典型的PCD層為微米的厚度；總厚度（包 括碳化鎢基材）如標準材料為彳6 mm或3 2⑴⑴。 .該PCD表面被精細地拋光，以具有一小於約’微米 (micron)的Ra值’該坯料係以線切割EDM(wire_EDM)切 •24- 1356449 割以形成鋸齒狀圖形，且頂端至頂點的距離約為4〇〇微米， 而頂點至凹點的深度約為100微米，其尖端角度為6〇、7〇、 6〇、90或1〇〇度（相對於施加在拋光墊的磨光表面），其係 因為電腦操作截斷PCD坯料的不同而不同。該鋸齒狀圖 形在被垂直切開的刀片上產生對稱的輪廓（口⑺⑴㊀），該刀 片（如切割元件）的厚度能小於約1mm。若所用的線很細（如 15〇微米）’則切口的損失就能最小化，而使得各圓盤片的 刀片數目最大化。 該刀片能接著以具有微米級鑽石懸浮液的超音波水浴 清洗，以移除所有懸浮的碎片，以及具有微裂隙（mjcr〇 C「aCk)和逆轉換鑽石（back converted diamond)的熱剝蝕表 面層。 該刀片（如切割元件）能接著固定於一凹槽模具，以對 '、所有切割尖端在20微米之内。接著，該模具以環氧椒 月曰澆鑄以堅固該刀片，以被安排在直徑約彳〇 〇 ^ 、而厚 度約7 mm之圓盤上呈現放射型圖案。該刀片能設置有垂 直於該模具表面的切割邊緣或有一控制的傾斜度。 、σ果該切割角度能被調整而在該抛光塾上達到最佳 凹槽，也控制在該環氧樹脂基材之上的切割尖端突出物（約 100微米）’該突出物能被排列而使切割尖端的增加平緩， 由於如此控制切割擴及的數量，該拋光墊能被清理，且具 有階梯型表面粗糙度，以達到最佳的拋光效果。 例如，高的表面粗糙度能快速地清除晶圓上銅沉積之 突出點，而能迅速變平坦，令抛光下一個階梯表面粗縫度 -25- 1356449 以使得銅更薄，最後，該表面粗糙度能變的相對平坦’擦 亮（buff)已經很薄的鋼層而移除障礙層（如氮化钽（TaN))。 目刖C Μ P法需要快速拋光、緩慢拋光以及用三個連續階 段來擦亮。本創作之拋光墊調整器能（選擇性地）以合一的 階段操作’而大大地節省製作成本並促進產品的生產率。 一旦上述的尖端變鈍’而使得在拋光晶圓時降低移除 率，則所使用的尖端能簡單地恢復藉由溶解於溶劑十或燒 掉壞氧樹脂基材，該刀片能接著重新設定為具有另一個鋸 齒狀侧邊以製造新的拋光墊調整器，此能大大地降低製造 成本。既有的拋光墊調整器因為無法從尖銳的尖端挑選出 磨損的尖端而很少重新被使用。 例2: 使用與例1中所述相似的方法，不同之處在於以碳化 鎢坯料代替PCD。該碳化鎢坯料包括少量的鈷(如6 wt%>， 將直的刀片設置於一固定裝置，且放置在一具有甲烧(1%) 與氫之混合㈣CVD &應器，該具甲烷與氫的混合物能 :分解且分離成碳和原子氫。該塗佈有碳化鎢# CVDD將 積在鑽石顆粒，藉由控制成核密度、稀疏的原子核分佈、 士自的顆粒車乂问的突出物以及更遠的分隔率來間隔尖銳 切割尖端。該鑽石顆粒的範圍能從奈米結晶（如直的邊緣） 大於10微米的顆粒。在碳化鎢中低的鈷含量能幫助鑽 石避免因其觸媒能力所產生之逆反應而得以保存。 -26. 1356449 例3: 使用與例2所述相似的步驟，不同之處在於該刀片係 從摻雜碳化矽坯料之矽所切片形成的。 例4: 使用與例3所述相似的步驟，不同之處在於該刀片係 從一燒結之微米級的粒狀氮化矽所切片形成的。 • 例5: 使用與例2所述相似的步驟，不同之處在於也可使用 由具有紀強化氧化锆（Z「02)以及鈦所製成的胚料，以作為 鑽石薄膜沉積所用的界面塗佈緩衝劑。 需要瞭解的是以上所述之排列皆僅是在描述本發明原 則的應用，許多改變及不同的排列亦可以在不脫離本發明 之精神和範圍的情況下被於本領域具通常知識者所設想出 來而申凊範圍也涵蓋上述的改變和排列。因此，儘管本 發明被特定及詳述地描述呈上述最實用和最佳實施例，於 本領域具通常知識者可在不偏離本發明的原則和觀點的情 況下做許多如尺寸、材料、形狀、樣式、功能、操作方法、 組裝和使用等變動。 【圖式簡單說明】 第一圖係關於本發明一實施例之拋光墊調整器的立 圖。 暇 第二圖係關於本發明一實施例之拋光墊調整器的俯视 -27- Π56449 圖。 第二A圖係關於以既有方法調整之拋光墊的部份視 第二B圖係關於以本發明一實施例調整之拋光塾的部 份視圖。 第二C圖係關於以本發明另一實施例調整之拋光墊的 部份視圖。 第二D圖係有關於本發明另一實施例調整之拋光墊的 部份視圖。 第四圖係包含具各種幾何形狀之切割元件的部份抛光 塾調整器之立體圖》 第五圖係關於本發明一實施例之拋光墊調整器的側面 剖視圖。 第六A圖係關於本發明一實施例之抛光塾調整器的俯 第六B圖係第六A圖之拋光塾調整器的剖視圖。 第七圖係關於本發明一實施例之部份拋光墊調整器的 _微照片。 【主要元件符號說明】 (12)拋光墊調整器 ◦ 4) (14d)墓座 (1 6) (1 6a~j)切割元件 (1 8) (1 8a〜c)切割面 (21) —般平面 -28- 1356449 (22)方向 (24) (24a) (24c)延伸邊緣 (26) (26c)切割邊緣In a typical application, the application of the slurry helps to level the surface of the workpiece. The slurry can be an aqueous slurry or a chemical slurry. In the case of chemical slurry, the chemical in the process can be selected to provide cooling or react with the surface of the workpiece to soften the workpiece, providing a more efficient cutting process and discovering the stone wafer. The wear rate is greatly increased by the softening of the surface of the stone wafer. For example, it contains oxidized crystals. (For example, the chemical polishing liquid of the water-repellent water (7) can be used to form relatively high-viscosity oxides, and tends to "adhere". On the surface of the wafer, in this case, the pcD cutting device of the present invention does not need to cut the wafer 'but from the surface of the wafer to remove the oxide. As a result, the sharpness of the cutting edge becomes irrelevant. In addition, the 5th cutting device can also be greatly increased by using the polishing liquid. For example, a PCD to the separator can be used together with the polishing liquid to extend the number of uses by 1000 times than the pcD cutter. The fourth figure depicts various cutting elements (16g, 16h, 16j) associated with an embodiment of the present invention. In one aspect of the invention, the cutting element is size and shaped to have Rectangular section, ellipse Surface, circular cross section, triangular shape, polygonal shape, pyramidal cross section, etc. Various cutting elements that are fabricated and shaped can be formed by various positions and widths of the grooves cut into the PCD or PcBN sheets. Formed under the surface of the PCD or pCBN sheet (not shown) such that the cutting element includes an embedded recess having an example-22-^^() 449 such as a circle or a polygon (inset cavjtjes>. And another embodiment of the present invention, which illustrates a plurality of cutting elements (16e, 16f) formed on a PCD pedestal. As can be seen from the sixth drawing, the present invention is integrally formed from a superhard polycrystalline material and Cutting elements having different sizes and configurations, such as shown in the embodiments, can be used to cut, plan, or trim components, while smaller components (16f) are primarily used as "suspended (st) 〇pping)j element; in other words, the larger cutting element can further extend from the base of the PCD to further or more deeply cut the polishing pad being trimmed with the cutting element (not shown). Larger cutting element (6 6e) when extended into the workpiece far enough or deep enough, the smaller cutting element can reach the bottom surface of the workpiece (b〇u〇m out) to limit the larger cutting element (16e) to deeper In order to help achieve this concept, the larger cutting element can be made sharper than the smaller cutting element, for example, the larger cutting element can terminate at a tip (as shown in Figure 3C) The cutting element is similar, and the smaller cutting element can terminate in a flat plane (similar to the cutting element shown in Figure B). In this way, the larger cutting element can be easier than the smaller cutting element The workpiece is cut such that the smaller cutting element can act as a component of depth "ten". In this way, the present invention is able to control the depth of the cutting element cut into the workpiece (e.g., the CMP pad being trimmed) very accurately. In addition, 'When the cutting element of the present invention can be formed from a single piece of polycrystalline superhard material, the excess portion of the polycrystalline superhard material that remains available under the cutting element on the base of the cutting device Parts (or 23-1356449 forming the cutting device), in the aspect of the invention, the cutting element can be moved by #1, if the cutting element is blunt or damaged during use = thin superhard material layer is sharpened and formed into the same pattern as the original i, the surface is created. As long as there is enough to keep under the cutting element to allow the cutting (four) into - step cutting The cutting device of the present month can thus be relatively easy to sharpen or repair. EXAMPLES The following examples describe embodiments of the invention, and thus these examples are not to be construed as limiting the invention, but only appropriately teaching how to use the experimental data. A preferred system and method for carrying out the invention 'is a representative number of systems and methods. 18. A pCD having a sintered polycrystalline diamond and bonded to a cemented tungsten ca "bide" substrate Film as In the discharge processing method (Electrical Discharge Machining 'Day. The disc has a diameter of 34mm (such as Adic products), 52 coffee (such as 鸠 (3) products), 60 mm (such as Diam〇nd | nn〇 Vat丨〇ns products), 74 (such as Eiemem Six products) or 1 〇〇 coffee (such as Ding _ _ ma products). The typical PCD layer is micron thickness; total thickness (including tungsten carbide substrate) For example, the standard material is 彳6 mm or 3 2(1)(1). The surface of the PCD is finely polished to have an Ra value less than about 'micron'. The blank is cut by wire-cut EDM (wire_EDM) • 24- 1356449 To form a zigzag pattern with a tip-to-apex distance of approximately 4 μm and a vertex-to-pit depth of approximately 100 μm with a tip angle of 6〇, 7〇, 6〇, 90 or 1〇〇 (relative to the polished surface applied to the polishing pad), which differs depending on the computer operation to cut off the PCD blank. The zigzag pattern produces a symmetrical profile on the vertically cut blade (mouth (7) (1) one), such as The cutting element) can have a thickness of less than about 1 mm. The line is very thin (eg 15 μm), so the loss of the slit can be minimized, and the number of blades of each disc is maximized. The insert can then be cleaned in an ultrasonic bath with a micron-sized diamond suspension to move In addition to all suspended debris, and a thermal ablation surface layer with micro-cracks (mjcr〇C“aCk) and back converted diamond. The blade (eg cutting element) can then be fixed to a groove mold to ', all cutting tips are within 20 microns. Next, the mold was cast with a eponymous crucible to strengthen the blade to be arranged in a radial pattern on a disk having a diameter of about 彳〇 〇 ^ and a thickness of about 7 mm. The blade can be provided with a cutting edge that is perpendicular to the surface of the mold or has a controlled slope. σ, the cutting angle can be adjusted to achieve an optimum groove on the polishing crucible, and also to control the cutting tip protrusion (about 100 micrometers) above the epoxy substrate. The increase in the cutting tip is gentle, and since the number of cuts is controlled in this way, the polishing pad can be cleaned and has a stepped surface roughness for optimum polishing. For example, a high surface roughness can quickly remove the protruding points of copper deposits on the wafer, and can be quickly flattened, so that the next stepped surface is polished to a thicker degree of -25 to 1356449 to make the copper thinner. Finally, the surface is rough. The degree of change is relatively flat 'buffing' the already thin steel layer to remove the barrier layer (such as tantalum nitride (TaN)). The C Μ P method requires rapid polishing, slow polishing, and polishing in three successive stages. The polishing pad conditioner of the present invention can (optionally) operate in a single stage', which greatly saves manufacturing costs and promotes product productivity. Once the tip is blunted, which reduces the removal rate when polishing the wafer, the tip used can simply be restored by dissolving in solvent or burning off the bad epoxy substrate, which can then be reset to Having another serrated side to create a new polishing pad adjuster can greatly reduce manufacturing costs. Existing polishing pad adjusters are rarely re-used because they do not pick the worn tip from the sharp tip. Example 2: A method similar to that described in Example 1 was used except that the PCD was replaced with a tungsten carbide blank. The tungsten carbide billet comprises a small amount of cobalt (e.g., 6 wt%), a straight blade is placed on a fixture, and placed in a mixture of a burnt (1%) and hydrogen (four) CVD & The mixture with hydrogen can: decompose and separate into carbon and atomic hydrogen. The coating with tungsten carbide # CVDD will accumulate in the diamond particles, by controlling the nucleation density, sparse atomic nucleus distribution, and the self-proclaimed particle rut The object and the farther separation rate are used to separate the sharp cutting tip. The diamond particles can range from nanocrystalline (such as straight edges) to particles larger than 10 microns. The low cobalt content in tungsten carbide can help the diamond avoid contact The reverse reaction produced by the mediator was preserved. -26. 1356449 Example 3: A procedure similar to that described in Example 2 was used, except that the blade was formed by slicing the tantalum carbide doped billet. Example 4: A procedure similar to that described in Example 3 was used except that the blade was formed by slicing a sintered micron-sized granular tantalum nitride. • Example 5: Using steps similar to those described in Example 2, It can also be used by Yuki Zirconium oxide (Z "02" and a billet made of titanium for use as an interface coating buffer for diamond film deposition. It is to be understood that the above arrangement is only for the application of the principles of the present invention. Many variations and different permutations are also contemplated by those of ordinary skill in the art without departing from the spirit and scope of the invention. And the detailed description of the most practical and preferred embodiments described above, and those of ordinary skill in the art can make many such as dimensions, materials, shapes, styles, functions, and methods of operation without departing from the principles and concepts of the present invention. [Equation for assembly, use, etc.] The first figure is an elevational view of a polishing pad adjuster according to an embodiment of the present invention. The second figure is a plan view of a polishing pad adjuster according to an embodiment of the present invention. -27- Π56449. Fig. 2A is a portion of the polishing pad adjusted by the existing method. FIG. 2B is a portion of the polishing 调整 adjusted according to an embodiment of the present invention. Figure 2 is a partial view of a polishing pad adjusted in accordance with another embodiment of the present invention. Figure 2D is a partial view of a polishing pad adjusted in accordance with another embodiment of the present invention. A perspective view of a portion of a polishing pad conditioner including cutting elements having various geometric shapes. Fig. 5 is a side cross-sectional view of a polishing pad adjuster in accordance with an embodiment of the present invention. Figure 6A is a polishing process according to an embodiment of the present invention. The sixth embodiment of the 塾 adjuster is a cross-sectional view of the polishing 塾 adjuster of the sixth drawing A. The seventh drawing is a _microphotograph of a partial polishing pad adjuster according to an embodiment of the present invention. (12) Polishing pad adjuster ◦ 4) (14d) Tomb (1 6) (1 6a~j) Cutting element (1 8) (1 8a~c) Cutting surface (21) Normal plane -28- 1356449 ( 22) Direction (24) (24a) (24c) Extended Edge (26) (26c) Cutting Edge
• 29·• 29·