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TWI349831B - Resist polymer and method for producing the polymer - Google Patents

Resist polymer and method for producing the polymer

Info

Publication number
TWI349831B
TWI349831B TW093102596A TW93102596A TWI349831B TW I349831 B TWI349831 B TW I349831B TW 093102596 A TW093102596 A TW 093102596A TW 93102596 A TW93102596 A TW 93102596A TW I349831 B TWI349831 B TW I349831B
Authority
TW
Taiwan
Prior art keywords
polymer
producing
resist
resist polymer
Prior art date
Application number
TW093102596A
Other languages
Chinese (zh)
Other versions
TW200504456A (en
Inventor
Yamagishi Takanori
Oikawa Tomo
Kato Ichiro
Mizuno Kazuhiko
Yamaguchi Satoshi
Original Assignee
Maruzen Petrochem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Maruzen Petrochem Co Ltd filed Critical Maruzen Petrochem Co Ltd
Publication of TW200504456A publication Critical patent/TW200504456A/en
Application granted granted Critical
Publication of TWI349831B publication Critical patent/TWI349831B/en

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L3/00—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets
    • F16L3/08—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets substantially surrounding the pipe, cable or protective tubing
    • F16L3/10—Supports for pipes, cables or protective tubing, e.g. hangers, holders, clamps, cleats, clips, brackets substantially surrounding the pipe, cable or protective tubing divided, i.e. with two members engaging the pipe, cable or protective tubing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polymerisation Methods In General (AREA)
TW093102596A 2003-02-20 2004-02-05 Resist polymer and method for producing the polymer TWI349831B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003042536 2003-02-20

Publications (2)

Publication Number Publication Date
TW200504456A TW200504456A (en) 2005-02-01
TWI349831B true TWI349831B (en) 2011-10-01

Family

ID=32866439

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102596A TWI349831B (en) 2003-02-20 2004-02-05 Resist polymer and method for producing the polymer

Country Status (3)

Country Link
US (3) US20040167298A1 (en)
KR (1) KR100914425B1 (en)
TW (1) TWI349831B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4743426B2 (en) * 2006-05-12 2011-08-10 信越化学工業株式会社 Polymer for resist material and manufacturing method thereof, resist material, pattern forming method
JP5030474B2 (en) * 2006-05-18 2012-09-19 丸善石油化学株式会社 Resin composition for semiconductor lithography
JP5588095B2 (en) * 2006-12-06 2014-09-10 丸善石油化学株式会社 Copolymer for semiconductor lithography and method for producing the same
KR101446819B1 (en) * 2006-12-22 2014-10-01 마루젠 세끼유가가꾸 가부시키가이샤 Method for manufacturing polymer for semiconductor lithography
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
TWI448820B (en) * 2007-03-14 2014-08-11 Fujifilm Corp Method for producing resin for hydrophobilizing resist surface, resist composition containing the resin, and pattern-forming method
JP5743858B2 (en) * 2011-11-14 2015-07-01 丸善石油化学株式会社 Method for producing copolymer for low molecular weight resist
KR101530150B1 (en) * 2013-08-02 2015-06-19 주식회사 엘지화학 Method for preparing resin reinforced theremopastic resin using them
JP6838863B2 (en) * 2015-04-22 2021-03-03 株式会社ダイセル Resin for photoresist, method for producing photoresist resin, resin composition for photoresist, and method for forming a pattern
JP7242216B2 (en) 2018-08-23 2023-03-20 株式会社ダイセル Polymer production method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH03223860A (en) 1990-01-30 1991-10-02 Wako Pure Chem Ind Ltd Novel resist material
DE4007924A1 (en) 1990-03-13 1991-09-19 Basf Ag Radiation-sensitive mixt., esp. for positive photoresists - contains phenolic resin binder in which 30-70 per cent of hydroxyl gps. are protected, esp. by 2-tetra:hydro-pyranyl or -furanyl gps.
JPH04104251A (en) 1990-08-24 1992-04-06 Wako Pure Chem Ind Ltd Novel resist material
JPH04269754A (en) 1991-02-26 1992-09-25 Hitachi Chem Co Ltd Positive type photosensitive resin composition and photosensitive element using same
JP2964733B2 (en) 1991-10-23 1999-10-18 三菱電機株式会社 Pattern forming material
JPH0656910A (en) * 1992-08-05 1994-03-01 Toagosei Chem Ind Co Ltd Continuous production of polymer by anionic polymerization
JP3116751B2 (en) 1993-12-03 2000-12-11 ジェイエスアール株式会社 Radiation-sensitive resin composition
JP3751065B2 (en) 1995-06-28 2006-03-01 富士通株式会社 Resist material and resist pattern forming method
JP3832780B2 (en) 1997-02-27 2006-10-11 富士写真フイルム株式会社 Positive photoresist composition
JP3627465B2 (en) 1997-08-15 2005-03-09 Ｊｓｒ株式会社 Radiation sensitive resin composition
TWI225865B (en) 1998-03-27 2005-01-01 Mitsubishi Rayon Co Copolymer, preparation thereof and resist composition
JP3476359B2 (en) 1998-04-08 2003-12-10 富士通株式会社 Resist material, method for preparing the same, and method for forming resist pattern
JP4049236B2 (en) 1999-10-06 2008-02-20 富士フイルム株式会社 Positive resist composition
JP2002006501A (en) 1999-11-09 2002-01-09 Sumitomo Chem Co Ltd Chemically amplified resist composition
JP4838437B2 (en) * 2000-06-16 2011-12-14 Ｊｓｒ株式会社 Radiation sensitive resin composition
JP4790153B2 (en) * 2000-09-01 2011-10-12 富士通株式会社 Negative resist composition, method of forming resist pattern, and method of manufacturing electronic device
JP2002121223A (en) * 2000-10-11 2002-04-23 Sanyo Chem Ind Ltd Polymer and method for producing the same
JP4929552B2 (en) * 2000-10-30 2012-05-09 住友化学株式会社 Method for producing solid resin
WO2002069040A1 (en) * 2001-02-27 2002-09-06 Shipley Company, Llc Novel polymers, processes for polymer synthesis and photoresist compositions
JP3890979B2 (en) * 2001-12-27 2007-03-07 住友化学株式会社 Chemically amplified positive resist composition
KR100679060B1 (en) * 2002-03-25 2007-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 Polymers, Resist Compositions, and Pattern Forming Methods

Also Published As

Publication number Publication date
US20040167298A1 (en) 2004-08-26
TW200504456A (en) 2005-02-01
KR100914425B1 (en) 2009-08-27
US20050287474A1 (en) 2005-12-29
US20090123868A1 (en) 2009-05-14
US8163852B2 (en) 2012-04-24
KR20040075742A (en) 2004-08-30

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Legal Events

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