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TWI340175B - - Google Patents

Info

Publication number
TWI340175B
TWI340175B TW095134374A TW95134374A TWI340175B TW I340175 B TWI340175 B TW I340175B TW 095134374 A TW095134374 A TW 095134374A TW 95134374 A TW95134374 A TW 95134374A TW I340175 B TWI340175 B TW I340175B
Authority
TW
Taiwan
Application number
TW095134374A
Other languages
Chinese (zh)
Other versions
TW200722541A (en
Inventor
Abe Yoshiyuki
Tokuyuki Nakayama
Go Ohara
Riichiro Wake
Original Assignee
Sumitomo Metal Mining Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co filed Critical Sumitomo Metal Mining Co
Publication of TW200722541A publication Critical patent/TW200722541A/zh
Application granted granted Critical
Publication of TWI340175B publication Critical patent/TWI340175B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
TW095134374A 2005-09-22 2006-09-15 Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive film TW200722541A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005275330A JP4475209B2 (ja) 2005-09-22 2005-09-22 蒸着用酸化物燒結体タブレット

Publications (2)

Publication Number Publication Date
TW200722541A TW200722541A (en) 2007-06-16
TWI340175B true TWI340175B (ja) 2011-04-11

Family

ID=37972160

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134374A TW200722541A (en) 2005-09-22 2006-09-15 Tablet of oxide sintered body for vapor deposition, and transparent oxide conductive film

Country Status (3)

Country Link
JP (1) JP4475209B2 (ja)
KR (1) KR100839638B1 (ja)
TW (1) TW200722541A (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101627491B1 (ko) * 2007-07-06 2016-06-07 스미토모 긴조쿠 고잔 가부시키가이샤 산화물 소결물체와 그 제조 방법, 타겟, 및 그것을 이용해 얻어지는 투명 도전막 및 투명 도전성 기재
JP5257372B2 (ja) * 2009-11-30 2013-08-07 住友金属鉱山株式会社 酸化物蒸着材と透明導電膜および太陽電池
JP5224073B2 (ja) * 2010-03-26 2013-07-03 住友金属鉱山株式会社 酸化物蒸着材とその製造方法
JP2014095120A (ja) * 2012-11-09 2014-05-22 Ube Material Industries Ltd ＺｎＯ蒸着材及びそれを用いた透明導電膜
KR20140129770A (ko) 2013-04-30 2014-11-07 삼성디스플레이 주식회사 플라즈마 코팅 시스템용 타블렛, 이의 제조 방법, 및 이를 이용한 박막의 제조 방법
KR102152147B1 (ko) * 2013-07-26 2020-09-04 주식회사 선익시스템 증발유닛 및 이를 구비한 증착장치
CN109131198A (zh) * 2018-10-29 2019-01-04 湖北航天化学技术研究所 一种气囊用气体发生剂药片及其制备工艺和气体发生器系统
CN109646987B (zh) * 2019-01-10 2024-03-26 合肥百思智能装备有限公司 一种连续进出料高真空有机小分子提纯专用设备
KR20240105115A (ko) 2022-12-28 2024-07-05 한국세라믹기술원 혼합 또는 다층 코팅용 전자빔-물리적기상증착 잉곳 및 그 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08104978A (ja) * 1994-10-06 1996-04-23 Sumitomo Metal Mining Co Ltd Ｉｔｏ蒸着材およびその製造方法

Also Published As

Publication number Publication date
KR20070033943A (ko) 2007-03-27
JP4475209B2 (ja) 2010-06-09
TW200722541A (en) 2007-06-16
KR100839638B1 (ko) 2008-06-19
JP2007084881A (ja) 2007-04-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees