TWI238258B

TWI238258B - Wafer testing method

Info

Publication number: TWI238258B
Application number: TW92122614A
Authority: TW
Inventors: Yueh-Lung Lin
Original assignee: Advanced Semiconductor Eng
Priority date: 2003-08-18
Filing date: 2003-08-18
Publication date: 2005-08-21
Also published as: TW200508627A

Abstract

A wafer testing method for individual dies after wafer sawing process is provided. First, a wafer is attached onto a flexible film by a first adhesive layer. Then, the surface of the flexible film opposite to the wafer is attached onto a rigid substrate by a second adhesive layer. Finally, the wafer is sawed into a plurality of dies, and the dies are tested by a plurality of probes. The displacement of each die can be controlled in a range as the wafer is being sawed because of the rigidity and flatness of the rigid substrate. Therefore, the probes can align with bonding pads or bumps formed on the active surface of the dies precisely and perform testing simultaneously.

Description

1238258 案號 92122614 曰修正五、發明說明（1) 發明所屬之本發明可在晶圓切先前技術隨著半提高之下’ 來。目前半路的製造及形成之晶片接合（f 1 i p 面（active 或凸塊（b u 承載器例如 frame )等利用垂直式列的多個探覆晶接合墊測試。一般在後次序，且外線膠帶（晶圓切割前覆晶接合墊中，卻可能低。相反的技術領域是有關於一種測試方法，且特別是有關於一種割後，仍可使探針準確對位之晶圓測試方法。導體技術的快速演進，且在市場的需求不斷地更精密且先進的半導體電子元件不斷地發展出導體技術的前段製程而言，其主要包括積體電晶圓（wafer)的檢測寻’並將由晶圓切割所 (die)以打線接合（w i r e b ο n d i n g )或覆晶 - chip bonding)等方式，使得晶片之主動表 surface )上的覆晶接合塾(bonding pad ) m p )得以電性連接承載器（c a r r i e r )，其中為基板（substrate)或導線架（lead-。其中為了測試積體電路的電性狀態，例如可探針卡(vertical probe card )之陣歹片大才非針（probe )，對應接觸晶片之主動表面上的或凸塊，以進行晶片之電路分析及偵錯等電性進行晶圓的切割或是測試時，並沒有固定的先通常將晶圓黏著在一藍膜（blue tape)或紫 UV tape)上，以固定晶圓的位置。若選擇在進行測試，可以使探針與晶片之主動表面上的或凸塊準確對位，但接下來在進行切割的過程造成晶片的損壞，使得測試結果的準確性降，若選擇先進行晶圓的切割，由於藍膜或紫外1238258 Case No. 92122614, Amendment V. Description of the Invention (1) The invention to which the invention belongs can be improved under the previous technology of wafer cutting. At present, half-way manufacturing and forming of wafer bonding (f 1 ip surface (active or bump (bu carrier, such as frame), etc.) are performed using multiple flip-chip bonding pads in vertical rows. Generally, the order is behind, and the outer tape ( In wafer bonding pads before wafer dicing, it may be low. The opposite technical field is about a test method, and in particular, a wafer test method that can still accurately position the probe after cutting. Conductor Technology In terms of the rapid advancement of the market, and the demand of the market for ever more sophisticated and advanced semiconductor electronic components, and the development of the previous stage of the conductor technology, it mainly includes the detection and search of integrated wafers. The die uses wireb οnding or chip bonding to make the bonding pad mp) on the active surface of the chip be electrically connected to the carrier. ), Which is a substrate or lead-. In order to test the electrical state of the integrated circuit, for example, a vertical probe card The array chip is not a probe, which is in contact with the active surface or bumps of the chip to perform circuit analysis and error detection of the chip. When the wafer is cut or tested, it is not fixed. First, the wafer is usually adhered to a blue tape or a violet UV tape to fix the position of the wafer. If you choose to perform the test, you can accurately align the probe with the active surface of the wafer or the bump, but the subsequent cutting process will cause damage to the wafer, which will reduce the accuracy of the test result. Round cut due to blue film or UV

11580twf2.ptc 第6頁 1238258 _案號92122614_年月日修正 _ 五、發明說明（2) 線膠帶本身為一軟質薄膜，刀具在切割晶圓時所施加的壓力，可能造成藍膜或紫外線膠帶的變形。如此一來，將使得切割完成後的晶片位置偏移，導致探針無法準確地對位，造成測試上的困難。發明内容因此，本發明的目的就是在提供一種晶圓測試方法，適用於晶圓切割後之晶片測試，並可增加晶片測試時的準確性。基於上述目的，本發明提出一種晶圓測試方法。首先提供一軟質薄膜，此軟質薄膜具有一第一表面以及一第二表面，且第一表面上具有一第一膠層。接著提供一晶圓，並將此晶圓藉由第一膠層貼附於軟質薄膜上。然後提供一硬質基板，此硬質基材的一表面上具有一第二膠層，並且將貼附於軟質薄膜上之晶圓置於硬質基板上，以使軟質薄膜之第二表面藉由第二膠層貼附於硬質基板上。最後將晶圓切割成多個晶片，並例如藉由多個探針，來對晶片作電性測試。在本發明之晶圓測試方法中，軟質薄膜例如可為紫外線膠帶（UV tape)或藍膜（blue tape)等，而硬質基板之材質例如可為金屬、玻璃或塑膠等。在本發明之晶圓測試方法中，當晶片作完電性測試之後，更可以分別降低第一膠層及第二膠層的黏性，以使晶片與軟質薄膜及軟質薄膜與硬質基板分離。其中使晶片與軟質薄膜分離的方法，例如可藉由一吸嘴將晶片吸附，以使其11580twf2.ptc Page 6 1238258 _Case No. 92122614_ Year, Month and Day Amendment_ V. Description of the Invention (2) The wire tape itself is a soft film. The pressure applied by the cutter when cutting the wafer may cause blue film or ultraviolet tape. Of deformation. In this way, the position of the wafer after the dicing is shifted, and the probe cannot be accurately aligned, resulting in difficulties in testing. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wafer testing method, which is suitable for wafer testing after wafer dicing, and can increase accuracy during wafer testing. Based on the above objectives, the present invention provides a wafer testing method. First, a soft film is provided. The soft film has a first surface and a second surface, and the first surface has a first adhesive layer. A wafer is then provided, and the wafer is attached to the soft film through the first adhesive layer. A hard substrate is then provided, a second adhesive layer is provided on one surface of the hard substrate, and the wafer attached to the soft film is placed on the hard substrate so that the second surface of the soft film passes the second The adhesive layer is attached to a rigid substrate. Finally, the wafer is cut into a plurality of wafers, and the wafers are electrically tested, for example, by a plurality of probes. In the wafer testing method of the present invention, the soft film may be, for example, UV tape or blue tape, and the material of the hard substrate may be, for example, metal, glass, or plastic. In the wafer test method of the present invention, after the wafer is electrically tested, the viscosity of the first adhesive layer and the second adhesive layer can be reduced to separate the wafer from the soft film and the soft film from the rigid substrate. The method for separating the wafer from the soft film, for example, the wafer can be adsorbed by a suction nozzle so that

11580twf2.ptc 第7頁 1238258 _案號 92122614_年月日__ 五、發明說明（3) 與軟質薄膜分離。在本發明之晶圓測試方法中，令第一膠層及第二膠層降低黏性的方法，例如包括光線照射或加熱等方式。舉例而言，若第二膠層接受一第一波長範圍的光線照射以降低黏性，且第一膠層在接受第一波長範圍的光線照射後黏性不受影響，則第一膠層可藉由加熱的方式或接受一第二波長範圍的光線照射以降低黏性’其中第一波長範圍與第二波長範圍不互相重疊。此外，若第二膠層經過一第一溫度範圍的加熱以降低黏性，且第一膠層在經過第一溫度範圍的加熱後黏性不受影響，則第一膠層可藉由光線照射的方式或經過一第二溫度範圍的加熱以降低黏性，其中第一溫度範圍與第二溫度範圍不互相重疊。基於上述，本發明之晶圓測試方法乃是將軟質薄膜黏著在硬質基板上，以在晶圓進行切割時，提供足夠的剛性與平整度。如此一來，晶圓完成切割後，可控制每個晶片的位移皆在一定的範圍内，使得探針與晶片之主動表面上的覆晶接合墊或凸塊準確對位，並可進行單一晶片或同時進行多顆晶片的測試。此外，本發明之晶圓測試方法所使用的第一膠層與第二膠層可藉由例如光線照射或加熱等方法來降低其黏性，以便於在完成切割及測試後，將晶片與軟質薄膜分離，並將硬質基板再回收利用。值得注意的是，在進行例如光線照射或加熱時，第一膠層與第二膠層分別具有不同範圍的作用條件（如光波波長或加熱之溫度等），避免同時造成第一11580twf2.ptc Page 7 1238258 _ Case No. 92122614_ Year Month Day__ 5. Description of the invention (3) Separate from the soft film. In the wafer testing method of the present invention, methods for reducing the viscosity of the first adhesive layer and the second adhesive layer include, for example, light irradiation or heating. For example, if the second adhesive layer is irradiated with light of a first wavelength range to reduce the viscosity, and the viscosity of the first adhesive layer is not affected after receiving the light of the first wavelength range, the first adhesive layer may be To reduce the viscosity by heating or irradiating light with a second wavelength range, wherein the first wavelength range and the second wavelength range do not overlap each other. In addition, if the second adhesive layer is heated in a first temperature range to reduce viscosity, and the first adhesive layer is not affected in viscosity after being heated in the first temperature range, the first adhesive layer may be illuminated by light. Or in a second temperature range to reduce viscosity, wherein the first temperature range and the second temperature range do not overlap each other. Based on the above, the wafer testing method of the present invention is to adhere a soft film to a hard substrate to provide sufficient rigidity and flatness when the wafer is diced. In this way, after the wafer is cut, the displacement of each wafer can be controlled within a certain range, so that the probe is accurately aligned with the flip-chip bonding pad or bump on the active surface of the wafer, and a single wafer can be performed. Or test multiple chips simultaneously. In addition, the first adhesive layer and the second adhesive layer used in the wafer testing method of the present invention can be reduced in viscosity by, for example, light irradiation or heating, so as to facilitate the wafer and softness after the cutting and testing are completed. The film is separated and the rigid substrate is recycled. It is worth noting that when performing, for example, light irradiation or heating, the first adhesive layer and the second adhesive layer have different ranges of operating conditions (such as the wavelength of the light wave or the temperature of heating, etc.) to avoid causing the first

11580twf2.ptc 第8頁 1238258 案號 92122614_年月日_修正五、發明說明（4) 膠層與第二膠層的黏性降低，導致晶片、軟質薄膜及硬質基板三者之分離順序的錯亂〇為讓本發明之上述和其他目的特徵、和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下實施方式請參考第1圖，其繪示本發明之E 晶圓測試方法的整體外觀示意圖。晶片1 1 0係由晶圓（未繪示）切割而成，並藉由第一膠層1 2 0貼附於軟質薄膜 (如紫外線膠帶或藍膜等 ) 13 0之一 -表面上，而軟質薄膜1 3 0 之另一表面再藉由第二膠層 1 4 0貼附於硬質基板1 5 0上。其中硬質基板例如係由金屬、玻璃或塑膠等材質所製成。晶片1 1 0上具有多個凸塊1 1 2 ，當對晶片進行測試時，垂直式探針卡1 6 0上的探針 1 6 2對應接觸凸塊1 1 2 ，並藉由控制電路1 6 4驅動，以進行晶片之電路分析及偵錯等電性測試〇此外，軟質薄膜1 3 0 及第 -- 膠層 1 2 0之邊緣具有- -框架1 70 ，用以固定晶片1 1 0 之位移〇由於晶圓乃是藉由第一膠層120固定於軟質薄膜130 上而軟質薄膜130又藉由第二膠層1 4 0與硬質基板1 5 0貼合，使得晶圓在被切割成為多個晶片 1 1 0後，晶片1 1 0偏移的距離可被控制在一定的範圍内。正由於晶片1 1 0偏移的距離可被控制在一定的範圍内，垂直式探針卡1 6 0上的探針1 6 2仍然可以準確地接觸凸塊1 1 2 對晶片1 1 0進行測 Ί式〇11580twf2.ptc Page 8 1238258 Case No. 92122614_Year_Month_Revision V. Description of the Invention (4) The adhesiveness of the adhesive layer and the second adhesive layer is reduced, resulting in the disorder of the separation order of the wafer, the flexible film and the rigid substrate. 〇 In order to make the above and other features and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description of the following embodiments. Please refer to FIG. 1 for a drawing Schematic diagram showing the overall appearance of the E-wafer test method of the present invention. The wafer 1 10 is cut from a wafer (not shown), and is attached to one of the surfaces of a soft film (such as an ultraviolet tape or a blue film) by a first adhesive layer 120, and The other surface of the soft film 130 is attached to the hard substrate 150 through the second adhesive layer 140. The hard substrate is made of metal, glass or plastic. There are multiple bumps 1 1 2 on the wafer 1 10. When the wafer is tested, the probes 1 6 2 on the vertical probe card 16 0 correspond to the bumps 1 1 2 and are controlled by the control circuit 1 6 4 drives to perform electrical tests such as circuit analysis and error detection of the chip. In addition, the edges of the soft film 1 3 0 and the first adhesive layer 1 2 0 have--frame 1 70 to fix the chip 1 1 0 Because the wafer is fixed on the soft film 130 by the first adhesive layer 120 and the soft film 130 is attached to the hard substrate 150 by the second adhesive layer 140, the wafer is being cut. After becoming a plurality of wafers 110, the distance of wafer 110 offset can be controlled within a certain range. Because the offset distance of the wafer 1 1 0 can be controlled within a certain range, the probe 1 6 2 on the vertical probe card 160 can still accurately contact the bump 1 1 2 to the wafer 1 1 0. Test method

11580twf2.ptc 第9頁 1238258 _案號 92122614_年月日_^_ 五、發明說明（5) 在晶片11 0完成切割及測試的動作之後，接著便將晶片取出，而取出晶片的過程可區分以下兩個步驟：（一）降低第二膠層之黏性，以使軟質薄膜與硬質基板分離。 (二）降低第一膠層之黏性，以使晶片與軟質薄膜分離。在第一步驟與第二步驟中，皆可利用例如光線照射或加熱等加工方法來降低第一膠層及第二膠層的黏性。請參考第2 a〜2 d圖，其繪示本發明之一種分離過程的示意圖。首先如第2 a圖所示，以一第二波長的光線照射第二膠層1 4 0 ，並降低第二膠層1 4 0的黏性。接著如第2 b圖所示，使軟質薄膜1 3 0與硬質基材1 5 0分離。值得注意的是，在照射第二波長的光線時，第一膠層1 2 0之黏性並不會受到影響，所以晶片1 1 0仍然貼附在軟質薄膜1 3 0上。接著再如第2 c圖所示，以一第一波長的光線照射第一膠層1 2 0 ，並降低第一膠層1 2 0的黏性。最後如第2 d圖所示，例如利用一吸嘴將晶片吸附（未繪示），以使晶片1 1 0與軟質薄膜1 3 0分離。請參考第3 a〜3 d圖，其繪示本發明之另一種分離過程的示意圖。首先如第3 a圖所示，以一第二波長的光線照射第二膠層1 4 0 ，並降低第二膠層1 4 0的黏性。接著如第3 b圖所示，使軟質薄膜1 3 0與硬質基材1 5 0分離。值得注意的是，在照射第二波長的光線時，第一膠層1 2 0之黏性並不會受到影響，所以晶片1 1 0仍然貼附在軟質薄膜1 3 0上。接著再如第3 c圖所示，在一第一溫度範圍内進行加熱，以降低第一膠層1 2 0的黏性。最後如第3 d圖所示，例如利用一11580twf2.ptc Page 9 1238258 _ Case No. 92122614_ Year Month Day __ V. Description of the invention (5) After the wafer 110 has completed the cutting and testing operations, the wafer is then taken out, and the process of removing the wafer can be distinguished The following two steps: (1) Reduce the viscosity of the second adhesive layer to separate the soft film from the hard substrate. (2) Reduce the viscosity of the first adhesive layer to separate the wafer from the soft film. In the first step and the second step, processing methods such as light irradiation or heating can be used to reduce the viscosity of the first adhesive layer and the second adhesive layer. Please refer to Figures 2a to 2d, which illustrate a schematic diagram of a separation process of the present invention. First, as shown in Fig. 2a, the second adhesive layer 140 is irradiated with a light of a second wavelength, and the viscosity of the second adhesive layer 140 is reduced. Next, as shown in Fig. 2b, the soft film 130 is separated from the hard substrate 150. It is worth noting that when the light of the second wavelength is irradiated, the viscosity of the first adhesive layer 120 is not affected, so the wafer 110 is still attached to the soft film 130. Then, as shown in FIG. 2c, the first adhesive layer 12 is irradiated with light of a first wavelength, and the viscosity of the first adhesive layer 12 is reduced. Finally, as shown in Figure 2d, for example, a wafer is used to suck the wafer (not shown) to separate the wafer 110 from the soft film 130. Please refer to Figures 3a to 3d, which are schematic diagrams illustrating another separation process of the present invention. First, as shown in FIG. 3a, the second adhesive layer 140 is irradiated with light of a second wavelength, and the viscosity of the second adhesive layer 140 is reduced. Next, as shown in Fig. 3b, the soft film 130 and the hard substrate 150 are separated. It is worth noting that when the light of the second wavelength is irradiated, the viscosity of the first adhesive layer 120 is not affected, so the wafer 110 is still attached to the soft film 130. Then, as shown in FIG. 3c, heating is performed in a first temperature range to reduce the viscosity of the first adhesive layer 120. Finally, as shown in Figure 3d, for example, using a

11580twf2.pt c 第10頁 1238258 _案號92122614_年月曰修正_ 五、發明說明（6) 吸嘴將晶片吸附（未繪示），以使晶片1 1 0與軟質薄膜1 3 0 分離。請參考第4 a〜4 d圖，其繪示本發明之又一種分離過程的示意圖。首先如第4a圖所示，在一第二溫度範圍内進行加熱，以降低第二膠層1 4 0的黏性。接著如第4 b圖所示，使軟質薄膜1 3 0與硬質基材1 5 0分離。值得注意的是，在第一溫度範圍内進行加熱時，第一膠層1 2 0之黏性並不會受到影響，所以晶片1 1 0仍然貼附在軟質薄膜1 3 0上。接著再如第4 c圖所示，在一第一溫度範圍内進行加熱，以降低第一膠層1 2 0的黏性。最後如第4 d圖所示，例如利用一吸嘴將晶片吸附（未繪示），以使晶片1 1 0與軟質薄膜1 3 0分離。請參考第5 a〜5 d圖，其繪示本發明之再一種分離過程的示意圖。首先如第5a圖所示，在一第二溫度範圍内進行加熱，以降低第二膠層1 4 0的黏性。接著如第5 b圖所示，使軟質薄膜1 3 0與硬質基材1 5 0分離。值得注意的是，在第一溫度範圍内進行加熱時，第一膠層1 2 0之黏性並不會受到影響，所以晶片1 1 0仍然貼附在軟質薄膜1 3 0上。接著再如第5 c圖所示，以一第一波長的光線照射第一膠層1 4 0 ，降低第一膠層1 2 0的黏性。最後如第5 d圖所示，例如利用一吸嘴將晶片吸附（未繪示），以使晶片1 1 0與軟質薄膜 1 3 0分離。在上述實施例之分離過程中，藉由第一波長的光線照射或第一溫度範圍的加熱，可降低第一膠層之黏性。此11580twf2.pt c Page 10 1238258 _Case No. 92122614_ Year Month Amendment _ V. Description of the invention (6) The suction nozzle sucks the wafer (not shown) to separate the wafer 1 1 0 from the soft film 1 3 0. Please refer to Figs. 4a to 4d, which are schematic diagrams illustrating another separation process of the present invention. First, as shown in FIG. 4a, heating is performed in a second temperature range to reduce the viscosity of the second adhesive layer 140. Next, as shown in FIG. 4B, the soft film 130 and the hard substrate 150 are separated. It is worth noting that when heated in the first temperature range, the viscosity of the first adhesive layer 120 is not affected, so the wafer 110 is still attached to the soft film 130. Then, as shown in FIG. 4c, heating is performed in a first temperature range to reduce the viscosity of the first adhesive layer 120. Finally, as shown in Figure 4d, for example, a wafer is used to adsorb the wafer (not shown) to separate the wafer 110 from the soft film 130. Please refer to Figs. 5a to 5d, which are schematic diagrams illustrating another separation process of the present invention. First, as shown in FIG. 5a, heating is performed in a second temperature range to reduce the viscosity of the second adhesive layer 140. Next, as shown in FIG. 5B, the soft film 130 and the hard substrate 150 are separated. It is worth noting that when heated in the first temperature range, the viscosity of the first adhesive layer 120 is not affected, so the wafer 110 is still attached to the soft film 130. Then, as shown in FIG. 5c, the first adhesive layer 140 is irradiated with light of a first wavelength to reduce the viscosity of the first adhesive layer 120. Finally, as shown in Figure 5d, for example, a wafer is used to adsorb the wafer (not shown) to separate the wafer 1 10 from the soft film 130. In the separation process of the above embodiments, the first adhesive layer can be reduced in viscosity by irradiation with light of a first wavelength or heating in a first temperature range. this

11580twf2.ptc 第11頁 1238258 _案號 92122614_年月日__ 五、發明說明（7) 外，藉由第二波長的光線照射或第二溫度範圍的加熱，則可降低第二膠層之黏性。值得注意的是，第一波長與第二波長的範圍不互相重疊，且第一溫度範圍與第二溫度範圍也不同。因此，依本發明之特徵，在進行例如光線照射或加熱時等動作時，第一膠層與第二膠層具有不同範圍的作用條件（如光波波長或加熱之溫度等），可避免同時造成第一膠層與第二膠層的黏性降低，導致晶片、軟質薄膜及硬質基板三者之分離順序的錯亂。綜上所述，本發明之晶圓測試方法採用先進行測試，再進行晶圓切割的方式，來提高測試結果的準確度。首先藉由第一膠層將晶片固定在軟質薄膜上，再藉由第二膠層使軟質薄膜貼附於硬質基材上。由於硬質基板可以提供足夠的剛性與平整度，使得晶圓在進行切割時，可以控制每個晶片的位移皆在一定的範圍内。如此一來，探針便能與晶片之主動表面上的覆晶接合墊或凸塊準確對位，並可進行單一晶片或同時進行多顆晶片的測試。此外，在完成晶圓的切割與晶片的測試之後^本發明之晶圓測試方法可以輕易地透過例如光線照射或加熱等方法，來降低第一膠層與第二膠層的黏性，以分離晶片、軟質薄膜及硬質基板。另外，更因為第一膠層與第二膠層分別具有不同範圍的作用條件（如光波波長或加熱之溫度等），使得晶片、軟質薄膜及硬質基板三者可以依序分離。雖然本發明已以一較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精11580twf2.ptc Page 11 1238258 _ Case No. 92122614_ year month day__ V. Description of the invention (7) In addition, by irradiation with light of the second wavelength or heating in the second temperature range, the second adhesive layer can be reduced. Sticky. It is worth noting that the ranges of the first wavelength and the second wavelength do not overlap each other, and the first temperature range and the second temperature range are also different. Therefore, according to the characteristics of the present invention, when performing actions such as light irradiation or heating, the first adhesive layer and the second adhesive layer have different ranges of operating conditions (such as the wavelength of light waves or the temperature of heating, etc.), which can avoid simultaneous damage. The adhesiveness of the first adhesive layer and the second adhesive layer is reduced, which causes the separation order of the wafer, the soft film, and the rigid substrate to be disordered. In summary, the wafer test method of the present invention adopts a method of first performing a test and then performing wafer dicing to improve the accuracy of the test results. First, the wafer is fixed on the soft film by the first adhesive layer, and then the soft film is attached to the hard substrate by the second adhesive layer. Since the rigid substrate can provide sufficient rigidity and flatness, when the wafer is diced, the displacement of each wafer can be controlled within a certain range. In this way, the probe can be accurately aligned with the flip-chip bonding pads or bumps on the active surface of the wafer, and a single wafer or multiple wafers can be tested at the same time. In addition, after the wafer cutting and wafer testing are completed ^ The wafer testing method of the present invention can easily reduce the adhesion between the first adhesive layer and the second adhesive layer through methods such as light irradiation or heating to separate Wafers, flexible films and rigid substrates. In addition, because the first adhesive layer and the second adhesive layer have different operating conditions (such as the wavelength of the light wave or the temperature of heating), the wafer, the soft film, and the rigid substrate can be separated in sequence. Although the present invention has been disclosed above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art will not depart from the essence of the present invention.

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11580twf2.ptc 第13頁 1238258 _案號92122614_年月曰修正_ 圖式簡單說明第1圖繪示本發明之晶圓測試方法的整體外觀示意圖。第2 a〜2 d圖繪示本發明之一種分離過程的示意圖。第3 a〜3 d圖繪示本發明之另一種分離過程的示意圖。第4 a〜4 d圖繪示本發明之又一種分離過程的示意圖。第5a〜5d圖繪示本發明之再一種分離過程的示意圖。【圖式標示說明】 1 1 0 ·晶片 1 1 2 :凸塊 1 20 :第一膠層 1 3 0 :軟質薄膜 1 4 0 :第二膠層 1 5 0 :硬質基材 1 6 0 :垂直式探針卡 1 6 2 :探針 1 7 0 :框架11580twf2.ptc Page 13 1238258 _Case No. 92122614_ Year Month Revision _ Brief Description of Drawings Figure 1 shows a schematic diagram of the overall appearance of the wafer test method of the present invention. Figures 2a to 2d show schematic diagrams of a separation process of the present invention. Figures 3a ~ 3d are schematic diagrams illustrating another separation process of the present invention. Figures 4a to 4d are schematic diagrams illustrating another separation process of the present invention. Figures 5a to 5d are schematic diagrams illustrating another separation process of the present invention. [Illustration of Graphical Symbols] 1 1 0 · Wafer 1 1 2: Bump 1 20: First adhesive layer 1 3 0: Soft film 1 4 0: Second adhesive layer 1 5 0: Hard substrate 1 6 0: Vertical Probe card 1 6 2: probe 1 7 0: frame

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Claims

1238258 _ Case No. 92122614_ Year Month Date _ Amendment 6. Application for Patent Scope 1. A wafer test method at least includes: providing a soft film having a first surface and a second surface, and the first A first adhesive layer is provided on the surface; a wafer is provided, and the wafer is attached to the soft film through the first adhesive layer; a rigid substrate is provided, and a first substrate has a first substrate on a surface thereof. Two adhesive layers; placing the wafer attached to the flexible film on the rigid substrate, so that the second surface of the flexible film is attached to the rigid substrate through the second adhesive layer; and The wafer is cut into a plurality of wafers, and electrical tests are performed on the wafers. 2. The wafer test method as described in item 1 of the scope of the patent application, wherein the soft film includes ultraviolet tape (UV tape) and blue film (b 1 ue tape). After the sticky low drop, the radiation range of the line of light will be reflected after the wave .. The first range of the wave will be Fan Yili. Please be applied at the application layer. 1 The first receiving is received by the layer of glue. The second is receiving the shadow. In the insexuality, its method tests the circular crystal described in the description of the low viscosity. The range of the line of light after the radiation will be: The first fan Yili received the special application, such as glue 4 first, the first sticky low, the third drop, and the third meeting after the fan circle fan fan long ί Gabo special, please go through the first application layer, such as rubber and LO First, the first item overlaps with each other. Fan Changbo's method of testing the circular crystal is described.

11580twf2.ptc Page 15 1238258 _Case No. 92122614_ Year Month Amendment_ VI. Patent Application Range 6. The wafer test method described in item 1 of the patent application range, wherein the second adhesive layer is subjected to a first After heating in the temperature range, the viscosity is reduced, and the viscosity of the first adhesive layer is not affected after the heating in the first temperature range. 7. The wafer testing method according to item 6 of the scope of the patent application, wherein the first adhesive layer has reduced viscosity after being heated in a second temperature range, and the first temperature range and the second temperature range Do not overlap each other. 8. The method for testing a wafer as described in item 6 of the scope of patent application, wherein the first adhesive layer reduces the viscosity after being irradiated with light. 9. The wafer test method according to item 1 of the scope of patent application, wherein the material of the hard substrate includes one of metal, glass, and plastic. 10. The wafer test method according to item 1 of the scope of patent application, wherein the electrical test of the wafers is performed by a plurality of probes. 11. The method for testing a wafer as described in item 1 of the scope of patent application, wherein after the wafers are tested for electrical properties, the method further includes the following steps: reducing the viscosity of the second adhesive layer, so that the soft film and the Separating the hard substrate; and reducing the viscosity of the first adhesive layer to separate the wafers from the soft film. 12. The wafer testing method according to item 11 of the scope of patent application, wherein the method for reducing the viscosity of the first adhesive layer includes one of light irradiation and heating. 13. The method for testing a wafer as described in item 11 of the scope of patent application, wherein the method for reducing the viscosity of the second adhesive layer includes light irradiation and heating it.

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