TWI229931B - Solder ball and conductive wire for a semiconductor package, and its manufacturing method, and its evaporation method - Google Patents
Solder ball and conductive wire for a semiconductor package, and its manufacturing method, and its evaporation method Download PDFInfo
- Publication number
- TWI229931B TWI229931B TW92112263A TW92112263A TWI229931B TW I229931 B TWI229931 B TW I229931B TW 92112263 A TW92112263 A TW 92112263A TW 92112263 A TW92112263 A TW 92112263A TW I229931 B TWI229931 B TW I229931B
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- Taiwan
- Prior art keywords
- solder ball
- wire
- conductive wire
- aforementioned
- color
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 94
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000001704 evaporation Methods 0.000 title claims abstract description 18
- 239000003086 colorant Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 34
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 16
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims abstract description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000012964 benzotriazole Substances 0.000 claims abstract description 5
- 238000005476 soldering Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 18
- 238000004040 coloring Methods 0.000 claims description 15
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004806 packaging method and process Methods 0.000 claims description 5
- -1 alkylimidazole Chemical compound 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000002689 soil Substances 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims 2
- 241000251468 Actinopterygii Species 0.000 claims 1
- 238000009313 farming Methods 0.000 claims 1
- 239000008267 milk Substances 0.000 claims 1
- 210000004080 milk Anatomy 0.000 claims 1
- 235000013336 milk Nutrition 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 13
- 230000004907 flux Effects 0.000 abstract description 2
- 239000000975 dye Substances 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000000049 pigment Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 210000003296 saliva Anatomy 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- ZMPAPJBFYQSNFM-UHFFFAOYSA-N 1-sulfanylimidazole Chemical compound SN1C=CN=C1 ZMPAPJBFYQSNFM-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 150000001565 benzotriazoles Chemical class 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005111 flow chemistry technique Methods 0.000 description 1
- 208000021760 high fever Diseases 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
- H05K1/0269—Marks, test patterns or identification means for visual or optical inspection
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
- B23K3/06—Solder feeding devices; Solder melting pans
- B23K3/0607—Solder feeding devices
- B23K3/0623—Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/02—Arrangements of circuit components or wiring on supporting structure
- H05K7/10—Plug-in assemblages of components, e.g. IC sockets
- H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
- H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
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Description
1229931 曰 τ 92112263 年 η 五、發明說^- 【發明所屬之技術領域】 ^明係有關-種半導體封裝體用焊球 由物品之製造方法及蒸發方法,尤有關-種可藉 成)之焊/ ’ /ΡΛ分辨多種類(具有不同之大小及金屬組 電性後:性線材之半導體封裳體用焊球以及導 綠材以及該等物品之製造方法及蒸發方法者。 【先前技術】 銀(Agli之ί:二ί裝體用焊球係以錫(Sn)、鉛(Pb)或者 低、办^ ,其生產及處理甚容易,且熔點比較 = : = :是’ 及_等般,主要?= 有輸出入端子之形態之半導體封裝體上。 意及顧客之興趣,俜且有多籀夕+, 使用私度種類 A、 ^ ^係/、有夕種之大小以及多種之金屬組 成,又,J年來,因對於環境污染之規制係每日皆有強 ^市^不匕含錯(Pb)之僅由錫(Sn)構成之焊球亦有被開發 -如上述般’最近之使用於半導 焊球之;f大小以及金屬組成)係變得多樣化,因此4 =於一個生產工程中必須使用各個種類之焊球之情形發 例於一個焊球沖接裳備上必須使用各個種類之半 及ίΓ種類之焊球,故有前述焊球為管理非 ,困。亦即’對玻,於利用各種不同之 $ 7頁 I2#931 修正1 -----921122β^ a 五、發明說明(2) 沖接裝備之情形下,雜乂 上其昂貴之沖接裝備其:數甚容易,然而現實 之沖接裝備實行非常多種類之,故必須以若干台 接之焊f之混合比率將變得非常之高。作業。因此,被沖 如前述般,當將互異之大: 合時’將產生焊球是否堅固地回,球予以混 及炫著之焊球之直徑為較 電連f至外部裝置上等之多樣之㈣。及疋否未被 一方面’半導體封裝體用 度之金(Au)、鋁an七土加Μ、 綠材者’係指以高純 θ ΰ 鋁(Α1)或者銅(Cu)所製成,而連接於丰導俨 :片與回路基板(引線框架、印刷 連接於/導體 路薄膜等)間之細小導線。亦即 ;口路π、回 曰Η命士 a a ^尾性線材係將半導體 曰曰片/、支持該晶片之回路基板之間 種半導體材料。 ]作冤連接之細線,係一 H導電性㈣,料導體封裝體之種類 機械性特徵,或者顧客之興趣等,係'可用乡樣 = 樣之金屬形成’且於最近,化學性及電特性等稍佳:銅ς 等亦已被開發出及加以市售。 一方面,此種導電性線材,係於稱為spool之筒體之 表面附著以標籤(label)而被加以區別,然而於 裝體之線接合工程中,前述筒體係被剝脫,而加以使 因此於其後,係有非常難以區分導電性線材之種類以及直 =之問題。又’最近,使用於半導體封裳體上之 材之種類(直徑及金屬)係多樣化,因此於—個生產工中 ^用各種種類之導電性線材之時’其區分將更形困難 III [Hv’U扣丨咖imr财iruntiwrjurvwm jil"…__ ...............一二 ---- 第8頁 接合裝 導電性 ,對於 則不論 昂貴的 線接合 ,常會 使用不 如導電 ’或者 續問題 —個目 品之製 辨出多 多種種 甚難管 線材, 線材之 之個數 多種類 不良之 不同金 堅固地 先決定 類之半導 理前述導 於利用不 管理有多 甚為有 之導電性 情形。 屬所構成 接合於半 之化學性 1229931 --- 五、發明說明(3) 例如’因於—個線 體封裝體與多種種類之 電性線材之問題。亦即 同種之線接合裝備時, 容易,其於現實上,因 限,故必須以少數台之 線材之接合作業。以此 如前述般,於錯誤 之線材時,則會發生例 導體晶片及回路基板上 及電特性等之多樣之後 因此,本發明之第 裝體用焊球以及該等物 由觀察外表而立即地分 防止氧化者。 而本發明之第二個 :導電性線材以及該等 猎由觀察外表而立即地 又’其亦可防止氧化者 且 備上,使用 線材,故有 各種導電性 前述導電性 線接合裝備 裝備實行甚 發生線接合 同直徑及由 性線材未被 無法得到預 的,係在提供一種半導體封 造方法及蒸發方法,其可藉 種類之焊球者,又,其亦^ 目的,係在提供一種半導體封裝體 物品之製造方法及蒸發方法,其可 分辨出多種類之導電性線材者,
【發明内容】
為達成前述莖一Y 球,其特徵為· 、目的,本發明之半導體封裝體用 沖接後,藉由rt半導體封裝體用回路基板利用焊劑 子用之焊i者U鬲溫作回流加工,所形成之作為輪出入 ^_其表面係^^有機化合物與具有既定之 $ 9頁 1229931
--Ά mmm 五、發明說明(4) 唾、烧基咪峻及 係以相互相異之 衫之=料c成之著色劑作著色者 笨…;im,係為苯并 二、 者,為其特徵者。 色彩加以其大小及金屬組成 Μ者色,為其特徵者。 為達成前述第二^固t 性線材者,係於將半導體ΐ =發明之半導體封裝用導電 電性線材之表面上,以蔣= = 回路基板作電連接用之導 著色劑作著色者。 、 化合物與染料混合所形成之 又’前述有機化合物者,# A贫、,一 本并咪唾中之任-者,為其特开三唾、烧基口米唾及 相互相異者其直徑及金屬組成,以 為達成前述第—目的特徵者。 之製造方法者,係包括古.本發明之半導體封裝體用焊球 藉由焊劑作沖接後 \ ·於對半導體封裝體用回路基板 子利用之圓形=球而形成作為輸出入端 機化合物與既定之色彩之“述焊球浸潰於由有 焊球之表面上著色出^&所成之著色劑,而於 在此,前述著色階::jj炎為其特徵者。
之溫度之著色劑中約略彳q、係將則述知球浸潰於25〜5(TC 為達到前以:;1 的/Λ左右者。 係包括有:提供一焊抻夕本叙明之焊球之蒸發方法者, 物中含有-定色彩Ϊί;階段焊球為利用於有機化合
焊球以焊劑沖接於半二::f ::色劑作著色者;將前述 -;-----_ 體封裳體用回路基板上之階 第10頁 ,1229931 Λ__3 •修」 曰 五、發明說明(5) —y將鈾述回路基板於具有約1 5 0〜2 6 0 °c之溫度之爐具中 =二回流加工約30〜60秒左右,而將著色於焊球表面之著 色知丨作蒸發之階段;為其特徵者。 為達成則述第二目的之本發明之半導體封裝用導電性 雷、車ί製造方法者,係包括有:經由淨潔與拉拔工程使其 材$ 半導體晶片與回路基板間之提供通常之導電性線 :段;對前述導電性線材實行熱處理工程及捲線工 Ϊ丄二3述熱處理工程與捲線工程之間,將導電性線材 %丄t)刀鐘左右後,將盆數、降/卜 表面著色以既定色彩之階段乾二^ 方法:達二個目的’本發明之導電性線材之蒸發 料所成之:=制.二於有機化合物中含有既定色彩之染 用前it道ΐ色背加以著色’而提供導電性線材之階段;使 ^ ^ ^ ^ …尼上準備線接合之階段; 為只仃刖述線材之第一次球接人 设口 I I白扠, 由電能所形成之高熱之階段;:一::線材之-端提供 階段;為其特徵者。 、、材表面之耆色劑作蒸發之 【實施方式】 人+ Y容易地實施本發明之程产、^中之具有通常知識之 ΪιΓη侧關雙.^ -·~~一·— 參照附圖詳細說明本發 II QURlVnhF D JNlnjJHTIPtfb/in.iLnLP m? um hh ..._____
以下,以本發明所屬之技 m 1229931
案號92112冰3 五、發明說明(6) 明之較佳實施例 第1圖為將本發明之焊球2與一般之焊球4分別收容於 玻璃瓶中之狀態之立體圖,第2圖為本發明之焊球2與一\ 之焊球4作混合之狀態之立體圖。 、般1 如圖所示,本發明之焊球2其外形係大致為圓形,且 其f面係以一定之色彩加以著色,為其特徵者。當然, =,球2係於以焊劑(f iux)沖接(bumping)於半導體封裝體 山口路基板上後,貫施以南溫回流(ρ㊀f 1 〇 W )而作為輪 _ 端子利用者。 ’、、、月ίΰ入 会$ 一方面,雖未圖示,本發明之導電性線材其外形為略 旧導線之形態,且其表面係被著色以既定之色彩其特 ^者。當然,此種導電性線材係將半導體晶片與回路基板 相互電連接。 土 在此,前述著色劑係於與金屬作物理化學性結合之有 $化合物中添加以適當色彩之染料或顏料所形成之^品。 乍為前述之與金屬作物理化學性結合之有機化合物之代表 例,以苯并三唑、烷基咪唑及苯并咪唑為較佳。其中,以 在向溫下易揮發之烷基咪唑為最理想之有機化合物。 λ 作為參考,茲將前述苯并三唑、烧基咪唑及笨并咪唾 #之化學性構造揭示如下。 苯并三嗤(Benzotriazole)
第12頁 1229931 萦號 92112263 年 曰 五、發明說明(7) 修正 烧基味唆(Alkyl Imidazole —\m0»* w«afs 苯并咪嗤(Benzimidazole
第3 -1圖為回流前之本發明 體用回路基板上之立體圖,第= t之位於半導體封裳 發之本發明之焊球之溶接於半圖為回流後之色彩被揮 狀態之立體圖。 f震體用回路基板上之 所形由前述有機化合物與染料以及顏料等混合
Si 於焊球2之回流過程中,因高溫之環境 IIMl 球2於藉由發除去。亦即’如第圖所示,焊 --______^被冲接於回路基板6上後(回流前之狀態), «舰 ------— ___ __ 第13頁 銮號 92112263 _η 曰 1229931 修_ 五、發明說明(8) 前述之焊球2係具有既定之色彩,而如第3_2圖所示,焊球 2,於被回流加工而完全附著於回路基板6上後,前述焊球 2,之表面上之所有之著色劑係被除去,藉此,使焊球2,回 復至原來之色彩。 當然,在此,前述焊球2依其種類,亦即依其大小及 ^屬組成,而被著色成相互相異之色彩。因此/因對不同 以snf!相異之色彩’故可容易地區分不同大小 二成之!球。例如,於不存在有錯⑽)之烊 及鉛之f ί者色成藍色’係可與通常之以錫(Sn) 流加工焊球容易地區分。&,於焊球作回 於办$ i别+ ^ 著色劑所覆蓋,故可防止其露出 、二虱中而造成氧化。 ,、路出 $著,餐知之通常之焊球與本發 果:基板上’亦即熔著後之剪應力測=結
第14頁 1229931 修正 曰 案號 92112263 五、發明說明(9) 如前述之表所示,習知之通常之焊球之剪應力平 1 88 0.2,而本發明之焊球之剪應力平均為1 879 7, 下並無太大差異。又,其可靠指數者,通常之焊球 2.35 ’而本發明之焊球為2. u 亦無甚大差別。因此 解’本發明之經著色之焊球者,其於 : 通過剪應力測試。 力』#易地 一方面,雖未圖 料等混合所形成之著 中,其位於適用高溫 block)之上部之導電 揮發除去,藉此,乃 合用之球體形成以及 式(st i tch)接合領域 因此,對於前述導電 合力,前述著色劑係 領域(被接合之領域) 會產生因著色劑而使 · I 尽只 色劑,於導電性線材之線接合工程 之領域(例如位於加熱塊(hea1: 性線材之全體領域)上之部份係全被 恢復至原來之顏色。又,其一次之接 接合領域,或者二次之接合用之針腳 之著色劑亦全部被高溫環境所 性線材與半導體晶片及回路基板之接 完全不產生影響。換言之,適用 之著色劑因已全部被揮發除去,故不 接合力變劣之情形。 當然,在此,前述導電性線材亦依其種類,亦即依立 直徑及金屬組成等,被著色以相互相異之顏色,係可使g 電性線材間之區分較為容易。當然,亦可防止於線接合工 程前,因露出於空氣中而導致氧化之情形發生。 口 第4圖為本發明之焊球之回流後之斷面之攝影圖示。 如圖所示’本發明之焊球2,於回流後,於該焊球之 側,經確認,未形成有任何空隙(void)。因此,本發明之 焊球2即使被者色’其品質比起習知者亦不會較差。於图
案號 921122M _η 1229931 修正 I Λ 曰 五、發明說明(1〇) 示中’未說明之符號者,8為銅配線圖案,符號1 〇為鋼配 線圖案與焊球之間之界面1 〇。 — 第5圖為本發明之焊球之製造方法。 如圖所示,本發明之焊球之製造方法者,係由通常之 焊球製造工程S51與著色工程S52所構成。 首先’於前述通常之烊球之製造工程851中,使用錫 (Sn)與鉛(Pb),或者僅使用錫(Sn),於熔融後,加以々 卻,而製造出略圓形之焊球。 7 接著,於前述著色工程S52中,將前述圓形之焊 潰於混合有機化合物與染料之具有約25 5〇 t溫度之7 =約卜5从分鐘左右後’將其拔出並加以乾燥,而 之表面上者色以既定之色彩。 坪衣 大小ί:屬:=業而==之種類,!即焊球之 由觀看其:表二即可確認出焊球之』::異之色%,係可藉 又’前述著色劑係於盘今屬七 化合物中沐& t & 屬作物理化學性結合之有機 化“勿中添加適當之色彩之染料 〈有機 而前述與金屬作物理化學性姓入古=荨所形成之物品。 子’以苯并三唾、燒基;合物之代表性例 溫下易揮發之苯并三唑者為 有為較佳。其中於高 第6圖為本發明之焊球有機化合物。 示,本發明之焊球之蒸發方法係x法之圖示。如圖所 焊球沖接工程S62與基 '、焊球之著色工程S61、 首先,於箭、+、,Γ %S63所構成。 略門# 、 \焊球之著色工程S6l4» 布以著色劑。Λ,如上述般,於 二7~ -- 匕4亦即,蹲於有機化合 第16頁 物中含有 之表面。 合之有機 成之物品 接著 焊劑沖接 接著 焊球之回 使其產生 焊球表面 藉由 部裝置間 因。 料或者顏料之著色劑塗布於谭球 Γ 刚述者色劑係為於與金屬作物理化學性姓 化“匆中添加以適當之色彩之染料或者顏料所; ’於前述焊球之沖接工程S62中,將前述焊球以 於回路基板上而加以臨時固定。 ’ 於荊述瘵發工程S 6 3中,如前述般,將沖接有 路基板投入至約具有15〇〜26(rc溫度之燐且中, 約3—〇〜60秒鐘之回流(refl〇w),而將著前述 之著色劑全部予以蒸發。 前述蒸發,前述焊球與回路基板,或者焊球與外 之電連接作用,前述著色劑將不成為妨礙之主 第7圖為本發明之導電性線材之製造方法之圖示。 之如圖所不’本發明之導電性線材之製造方法係由通常 電性線材製造工程S71與著色工程S72所構成。 中 首先’於前述之通常之導電性線材之製造工程S71 1使用金(Au)、鋁(Α1)或銅(Cu)等之金屬,淨潔及拉拔 具有一定之直徑之導電性線材。 ^ 接著,於前述著色工程S72,進行前述淨潔及拉拔工 =之後熱處理工程與捲線工程。在此,於前述熱處理工程 二捲線工程之間,將前述導電性線材浸潰於混合有有機化 σ物與染料之具有約2 5〜5 0 °C之溫度之著色劑中約1〜5分鐘 、右’之後將其拔出並乾燥,而於導電性線材之表面著色 之色彩。當然,前述著色劑為於與金屬作物理化學 1229931
修正 性:合之有機化合物中添加以適當之色彩之染料或 形成之物品。 又’此種著色’因係依導電性線材之種類,亦即 電性線材《直徑以及金屬組成之不同而*色以不同之色 ^ ’故藉由觀看其外表即可立即確認該導電性線材之種 類。 第8圖為本發明之導電性線材之蒸發方法之圖示。如 :“ Γ1本發明之導電性線材之蒸發方法係由導電性線材 ”U1 又S81 ’與線接合用之提供加熱塊階段s82,與- 般,::述導電性線材之著色階段S81,如上述 ^材之表面塗以著色劑。,亦即,於導電性 者顏料之著色劑…含有既定色彩之染料或 “;:::機化合物中添加以適當之色彩之染料或顏料 與回ί:板加熱塊之階段S82 ’將半導體晶片 熱塊遂;=接::::;::1:上275。。之溫度之加 發。亦即,於前述^!:述線材上之著色劑予以蒸 %别迷線接合工程中,藉由斟 J ^ ^〇^275 色劑予以蒸發。 王體上之者 接著,於前述一次球接合工程S83 ΙΗΗ 係對前述線材之-端提供Λ仃刖述線 --—--^ ^ ^ ^^供由電能所產生
第18頁 索號 92112263
1229931 五、發明說明(13) 之高熱,藉此,將著色於 發。因此,因於半導體晶 程中,既已將著色劑全部 k成之接合力變劣之問題 接著於二次之針腳式 材^--次針腳接合,係於 所形成之摩擦熱,藉以將 蒸發。因此,於實施於前 接合工程既已將前述著色 著色劑所造成之接合力變 、 以上僅限定於前述實 並不只限定於該等實施,、 範圍内,孫π目士 > 門係可具有多樣變 &综上所述,依本發明 法以及焊球之蒸發方 金屬Γ之色彩’因此具有 矣、、且成之焊球之效果, 面以著色劑覆蓋,故有 之效果。 名 造太=,依本發明之半導 電及導電性線材之 同直:材著色以不同之色 直僅及不同金屬組成之 二’L每f之—端之著色劑予以蒸 ϋI貫施之線材之一次球接合工 泛5 ’因此不會發生由著色劑所 接合工 前述線 著色於 述回路 劑全部 劣之問 施方式 於不脫 形之實 之半導 法,因 可容易 又,於 可防止 程S 8 4中, 材之他端 線材之另 基板上之 蒸發,藉 題。 說明本發 離本發明 施例。 體封裝體 可對不同 地區分出 烊球之回 露出於空 為貫行前述線 提供以由超音波 端之著色劑予以 線材之二次針腳 此乃不會產生由 明,然而本發明 之範疇與領域之 用焊球以及其製 種類之焊球著色 不同大小及不同 流加工之前,因 氣中而產生氧化 c導電性線材以及其製 =、、發方法,因可對不同種類 彩,因此具有可容易地區分 導電性線材之效果,V . 1出不 1229931 圖式簡單說明 修正 第1圖為將本發明之焊球與一般之焊球分別 璃瓶中之狀態之立體圖。 於破 第2圖為本發明之焊球與一般之焊球作混合之狀態之立體 圖〇 第3-1圖為回流加工前之本發明之焊球之位於 封裝體用回路基板上之狀態之立體圖。 一 第3-2圖為回流加工後之色彩被揮發之本發 被炫體Λ裝體用回路基板上之狀態之立體圖 斷面示 意圖 第4圖為本發明之焊球之回流加工後之斷面之 Ο 第5圖為順序揭示本發明之焊球之製造方法之 圖。 -----…〜說明 第6圖為順序揭示本發明之焊球之蒸發方法 圖。 說明 說明圖 之說明 第7圖為順序1日貝士 圖。 序說日月本發日月之導電性、線材之製造方法之 弟8圖為順戾口 圖。、序⑨明本發明^電性線材《蒸發方法之 L圖式標號說明】 2 本發明之焊球 f =流加工後之回復肩 4_——一 S知之通常之焊球 6 半導體封裝體用回鞋 彩之本發明之焊球
第21頁
Claims (1)
- 1· 一種半導體封裝體用焊球,其特徵在於一金屬元 件,外表覆上有機化合物及預設色彩之染料,作為於輸出 入端子之用途。 2·如申請專利範圍第1項之半導體封裝體用焊球,其 特徵在於前述有機化合物,係為苯并三唑、烷基咪唑及苯 并咪唑中之任一者。 專利範圍第1項之半導體封裝體用焊球,其 特:支在於中雨述焊球依其大小及金屬組 之色彩加以著色。 偶丘祁,、 導體4曰;;半導體封裝體用導電性線材,其特徵在於將半 導體“與㈣基板作t連制之導電性線材 以將有機化合物與染料混合所形成之著色劑作著色。 5盆=申請專利範圍第4項之半導體封裝體用導電 材,八特徵在於前述有機化合物,係為 ^ 唑及苯并咪唑中之任一者。 开一全、烷基咪 6甘f申請專利範圍第4項之半導體封裝體用導電性 特徵在於前述導電性線材,係依其直徑且 成,以相互相異之色彩加以著色。 金屬組 案號 92112263 1229931六、申請專利範圍 7. —種半導體封裝體用焊球之製造方法,農 :包口 :於對半導體封裝體用回路基板藉由焊 =階” ’將前述焊球浸潰於由有機 色出既定之色彩之階段。 衣面上者 8土如:料利範圍第7工員之半導體封裝體用 2^V 在於前述著色階段,係將前述焊球浸潰於 25〜50 C之溫度之著色劑中約略卜5分鐘左右。又/貝於 -2 —種焊球之蒸發方法,其特徵在於係包括有:提供 之階段,該焊球為利用於有機化合物中含有一定色 之著色劑作著將前述焊球以焊劑沖接於 古奶^、裝體用回路基板上之階段;將前述回路基板於具 、、、、〇〜°C之溫度之爐具中實行回流加工約30〜60秒左 而將著色於焊球表面之著色劑作蒸發之階段。^ * 1 〇 · 一種半導體封裝用導電性線材之製造方法,其特 辦曰j,、枯有·經由淨潔與拉拔工程使其電連接於半導 寸、,+、道〔、回路基板間之提供通常之導電性線材之階段;對 2 2工,性線材實行熱處理工程及捲線工程,而於前述熱 二人ΐ程與捲線工程之間,將導電性線材浸潰於混合有機 化合物鱼迅4ci + θ丄 一木针之具有約2 5〜5 0。〇之著色劑中約略1〜5分鐘左第23頁 1229931右後,將其乾燥化,而於導電性線材之表面著色以既 彩之階段。 匕 n · 一種導電性線材之蒸發方法,其特徵在於係包括 二以::有:::4::含有既定色彩之染料所成之著色劑 材將半導體晶片與使;前述導電性線 成之高熱之階段;:述線材之一鈿提供由電能所形 而對前述線材之另材之第二次之針腳式接合 色於前述線材表面之著色^^波所形成之摩擦熱而將著 <者色劑作蒸發之階段。
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JP4637652B2 (ja) * | 2005-05-31 | 2011-02-23 | 富士通株式会社 | はんだ付け方法及び電子部品 |
JP4137112B2 (ja) * | 2005-10-20 | 2008-08-20 | 日本テキサス・インスツルメンツ株式会社 | 電子部品の製造方法 |
CN102097334B (zh) * | 2009-12-14 | 2013-10-16 | 日本特殊陶业株式会社 | 布线基板的制造方法及针脚排列装置 |
WO2013175692A1 (ja) | 2012-05-23 | 2013-11-28 | パナソニック株式会社 | 接合補助剤およびその製造方法 |
CN104117747B (zh) * | 2014-07-08 | 2016-05-11 | 宜兴市吉泰电子有限公司 | 电子封装外壳引线焊接方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6917131A (zh) * | 1969-11-14 | 1971-05-18 | ||
US3989605A (en) * | 1973-03-09 | 1976-11-02 | Sumitomo Chemical Company, Limited | Method for continuous electrolytic coloring of aluminum articles |
US4410281A (en) * | 1981-03-02 | 1983-10-18 | Ralph B. Carter Company | Mixing method and apparatus utilizing pipe elbows |
US4572435A (en) * | 1984-05-30 | 1986-02-25 | Owens-Corning Fiberglas Corporation | Foamable liquid distributing means |
US4802835A (en) * | 1986-04-25 | 1989-02-07 | Colgate-Palmolive Company | Apparatus for making soap |
US5595712A (en) * | 1994-07-25 | 1997-01-21 | E. I. Du Pont De Nemours And Company | Chemical mixing and reaction apparatus |
RU2174728C2 (ru) * | 1994-10-12 | 2001-10-10 | Х Пауэр Корпорейшн | Топливный элемент, использующий интегральную технологию пластин для распределения жидкости |
DE19511603A1 (de) * | 1995-03-30 | 1996-10-02 | Norbert Dr Ing Schwesinger | Vorrichtung zum Mischen kleiner Flüssigkeitsmengen |
US6555261B1 (en) * | 1998-10-29 | 2003-04-29 | 3M Innovative Properties Company | Microstructured flow fields |
TW516043B (en) * | 1998-12-19 | 2003-01-01 | Tai I Electric Wire & Amp Cabl | High temperature resistant colored enamel wires |
US6312498B1 (en) * | 1999-12-14 | 2001-11-06 | Mk Electron Co., Ltd. | Method of manufacturing solder balls |
US6517602B2 (en) * | 2000-03-14 | 2003-02-11 | Hitachi Metals, Ltd | Solder ball and method for producing same |
US6489407B1 (en) * | 2000-06-22 | 2002-12-03 | Dow Corning Corporation | Silicone coatings containing silicone mist suppressant compositions |
US6540129B2 (en) * | 2000-07-14 | 2003-04-01 | Spraytech, Ltd. | Apparatus and method for manufacturing solder balls |
US6569553B1 (en) * | 2000-08-28 | 2003-05-27 | Motorola, Inc. | Fuel processor with integrated fuel cell utilizing ceramic technology |
US7252898B2 (en) * | 2002-01-14 | 2007-08-07 | The Board Of Trustees Of The University Of Illinois | Fuel cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same |
US6713206B2 (en) * | 2002-01-14 | 2004-03-30 | Board Of Trustees Of University Of Illinois | Electrochemical cells comprising laminar flow induced dynamic conducting interfaces, electronic devices comprising such cells, and methods employing same |
US7262074B2 (en) * | 2002-07-08 | 2007-08-28 | Micron Technology, Inc. | Methods of fabricating underfilled, encapsulated semiconductor die assemblies |
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2003
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- 2003-05-07 JP JP2003129272A patent/JP3740507B2/ja not_active Expired - Fee Related
- 2003-05-14 US US10/437,749 patent/US6888242B2/en not_active Expired - Lifetime
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US20050156327A1 (en) | 2005-07-21 |
JP2003332370A (ja) | 2003-11-21 |
TW200401421A (en) | 2004-01-16 |
JP3740507B2 (ja) | 2006-02-01 |
US20030219927A1 (en) | 2003-11-27 |
US6888242B2 (en) | 2005-05-03 |
US7145251B2 (en) | 2006-12-05 |
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