1297736 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種真空鍍膜設備，尤其涉及一種無栅極 離子助鍍器。 【先前技術】 傳統真空鍍膜設備係於真空條件下用電阻或電子束 將膜料加熱至条發溫度，使其蒸發並沈積於基材上形成薄 籲膜以達到鍍膜之目的。惟，被蒸發膜料原子之能量低，所 鐘膜層之附著力差、密度低，薄膜之性質受環境影響大、 易脫落、不穩定。此外，電子蒸發時，電子槍之柵極電壓 為6000-l0000V，容易引起高壓放電打火，影響薄膜之 曰 只 置° 為;加真空鏡膜之附著力、密度並改善其物理性質， 於電子束蒸發過程中使用離子源對基材進行轟擊，實現離 子辅助沈積之目的。 ·〃⑨普遍使用之一種用於無拇極離子助鑛器之離子源 係由考夫曼（Kaufman)首先發明之端霍爾離子源（End_Haii1297736 IX. Description of the Invention: [Technical Field] The present invention relates to a vacuum coating apparatus, and more particularly to a gridless ion plating apparatus. [Prior Art] Conventional vacuum coating equipment heats a film material to a firing temperature under a vacuum condition by a resistor or an electron beam, evaporates it and deposits it on a substrate to form a thin film to achieve the purpose of coating. However, the energy of the atomized material of the film is low, the adhesion of the film layer is poor, and the density is low, and the properties of the film are greatly affected by the environment, and are easily detached and unstable. In addition, when the electrons evaporate, the gate voltage of the electron gun is 6000-l0000V, which is easy to cause high-voltage discharge and ignition, which affects the film only when the film is applied; the adhesion, density and physical properties of the vacuum mirror film are added to the electron beam. The ion source is used to bombard the substrate during evaporation to achieve ion-assisted deposition. · 〃9 is commonly used in an ion source without a thumb ion ionizer. The end Hall ion source first invented by Kaufman (End_Haii)
Ion Souree)，彳夫於美國專利第4,862,Q32號揭露其主 要技術内容如下： ~ 如第一圖所示，端霍爾離子源2〇由發射電子之陰極 22、接收電子並發射離子之陽極25、磁路％及供氣系統 (未標不）組成’該陰極22包括一陰極燈絲221及兩陶瓷絕 緣墊224及226。磁路26於放電區24内形成磁場，磁力 線由陰極22下部之磁極發出經放電區進入頂部磁極27。 1297736 離=源工作時，工作氣體（氬氣）和反應氣體（如氧氣）由供 氣管道21進入到放電區内24。與此同時，陰極燈絲 被加熱至熱電子發射溫度，陽極25被施以正電位。在電 場之作用下’陰極燈絲221發射之部分電子沿磁力線以螺 旋運動之方式向陽極25遷移，在放電區内與氣體原子或 =子，生碰撞，並將其電離。於電離過程中產生之電子繼 續向陽極25遷移，產生之離子將在放電& 24 f場之作用 下被加速並與陰極燈絲221產生之部分電子中和之後形 =離子體射出離子源2G，具有—定能量之#離子體對 基材進行直接轟擊進行鍵前清洗，或轟擊薄膜表面盘薄膜 表面原子進行能量交換進行離子辅助鍍膜。 、 =子辅助鍍膜對成長之膜原子撞擊可使薄膜之光譜 =特別穩定、吸水性減少、折射率升高及粗糙度降低， =疋因為離子助鑛後膜堆積密度昇高，膜變得更緻密，因 ，水！變少，光譜特性也因此不會飄移，折射率變大且 ^疋^ ’上述之離子助鑛器之陽極為錐形結構其開口向 ’:能準確控制離子發射之角度使之準確撞擊於基材 上’從而影響鍍膜品質之控制。 故，提供一種準確控制離子發射角度並提高鍍膜品 之無柵極離子助鍍器實為必要。 ’又口、 【内容】 U明之目的在於提供—種準確控制離子發射角度 之無柵極離子助鍍器。 &別朽反 為實見本么明目的，本發明提供一種無栅極離子助鍍 1297736 器，其包括一離子源，該離子源包括： 一放電區； 一磁路，該磁路環繞該放電區； 一供氣系統； 一陽極，設置於該放電區之下方； -陰極’設置於該放電區之上方，與上述陽極相對應 及—陽極發射角玉件，設置於該陽極上方，該陽㈣ =件設有錐形通孔，並與該陽極相配合，用於控㈣ 子發射角度。 =前技術相較，本發明之無栅極離子助鍍器通過配 ί及基材擺設位置來調節陽極發射角工件控制 離子發射角度，提高基材之鑛臈品質。 【實施方式】 說明了面將結合附圖及實施例對本發明作進—步之詳細 明參閱第二圖’本發明之一種無栅極離子助鍍器，並 =電-離子源：該離子源30包括:一放電區34(: 電至），-磁路36,該磁路36環繞該放電區Μ;— 未標示-陽極35，設置於該放電區別之下 35相m置於該放電區34之上*，與上述陽極 方，用於控制離子發射角度。 上 t - 36為環繞該無柵極離子助鍍器而設， -叙由月磁極（未標示）、磁體（未標示）、外磁體（未標 1297736 及頂部磁體364及366 έ日屮 示）、磁體f奸-、/ 路36之背磁極（未標 於體(未標示)及頂部磁體364及挪 及32Γ陰Γ 32包括一陰極燈絲321及兩陶究絕緣塾324 路36之^陶竞絕、緣塾324及326分別連接上述上述磁 之頂部磁體364 * 366。該陰極燈絲321為鶴=， =ymm ’其兩端分別通過螺栓322連接於兩陶究絕 緣墊324及326使陰極燈絲切與其他工件絕緣。 該陽極35為圓柱體結構，其 錐形結構之凹槽’該凹槽直徑較 一 上沭降搞π ^ 曰且仫钗大之錐口向上，相對應於 :。該陽極35之錐形凹槽底部構造出可裝載膜 陽：圓形：禍351。該陽極35之下部設有供氣板3:、 f極35通過螺栓（未標示）與供氣板阳相連接。供氣板 312上設有複數供氣管 八 3—-般還設有水二=，：广陽極 坤禍-及其他工件於高溫下被燒毁(4不），以避免 該陽極發㈣卫件38，設置於陽極％之錐口上方， 通==其沿中軸心開設一錐㈣39。該錐形 、孔31、有上錐口 391與下錐口 392，下錐口 之 391之直徑。該大錐口 392之直徑與上述陽極 緊槽較大錐口之尺寸相—致，且兩錐口互相搭配 緊山…&，形成腔體’而陽極發射角工件38之小 為收攏成型之發射σ。本發明之陽極發射角工件可 實際情況需要選擇具有不同尺寸之大錐口與小錐口趋形 I297736 成不同之發射角，來控制發射角度。 作金ί發明之無柵極離子助鍍器之離子源3〇於真空環境 乂 Τ卫作氣體及反應氣體分別由複數 :到放電區％内，工作氣體選用氯氣，反應：細: 二。磁力線由陰極32下部之磁路36發出進人頂部磁極 、6=肖此同時’陰極燈絲321被加熱至熱電子發射 :二’陽極35被施以正電位。在電場之作用下，陰極燈 :1發射之部分電子沿磁力線以螺旋運動之方式通過 ，發射角工件38之錐形通孔39向陽極％遷移，在放 雷=Γ與氣體原子或分子發生碰撞’並將其電離。於 蔣2私中產生之電子繼續向陽極35遷移，產生之離子 封電區34電場之仙下被加速，並通過已調節好發 射角度之陽極發射角工件38之錐形通孔％，與陰極燈絲 生之部分電子中和之後，形成等離子體從離子助鐘 血ur具有一定能量之等離子體束對基材(未標示) •订絲進行㈣清洗，或轟擊基材薄膜表面與薄膜 面原子進行能量交換進行離子辅助鍍膜。 本發明係制於現有陽極上方擺設會產生各種不同 =角之陽極發射角工件，而使離子發射角度可配合基材 _审4 土材擺位置來選擇’可使基材上所鑛出之薄膜品 二#子並更有效運用離子流且此種方式於陽極換置上非 吊簡便，、且清潔離子搶時也易於拆解組裝。當然，也可選 用體成型法直接做出具有陽極發射角工件形狀之陽極。 另’本發明不限於具有軸對稱之圓形離子源之助鍍 1297736 器，本發明之離子源可為不同形狀，、 軸方向可在加工範圍内延伸源沿垂直於對稱 因此本發明之陽極發射角工件可或擴圓形蒸發源， 广 件可根據圓形助鍍器之變化 叹计相應可調整發射角之陽極發射角工件。 該無柵極離子源用於等離子輔 之前其補助鍍膜時，在鍍多層膜 二清洗基材;可以得到更好之膜層 ϋ ’離子動量傳遞給正在形成膜之 進，膜声之穷声女么担^ _ 胰層之結構侍到改 可於：：，為“。該辅助鍍膜用之無栅極離子源 體作作’蒸發物f原子與氧氣在高密度等離子 收率大大L彳冑及離化，使反應完全，使薄膜之損耗及吸 質量之ΐ:於大直徑範圍内生產均勻、低吸收、高 綜上所述，本發明確已符合發明專利之要件，遂依 ^出專利申請。m所述者縣本發明之較佳實施 自不能以此限制本案之中請專利範圍 技藝之人士援依本發明之精神所作之等效修飾或變；;本J 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖第一圖係習知技術之無柵極離子助鍍器之剖面示意 第二圖係本發明之無栅極離子助鍍器之剖面示意圖。 【主要元件符號說明】 30 陰極 @ +源 30陰描 32 1297736 放電區 34 陽極 35 磁路 36 陽極發射角工件 38’ 錐形通孔 39 供氣板 312 供氣管道 313 陰極燈絲 321 螺栓 322 陶瓷絕緣墊 324 ， 326 坩堝 351 頂部磁體 364 ， 366 上錐口 391 下錐口 392 • ·Ion Souree, U.S. Patent No. 4,862, Q32 discloses the main technical contents as follows: ~ As shown in the first figure, the end Hall ion source 2 is composed of a cathode 22 for emitting electrons, an anode for receiving electrons and emitting ions. 25. Magnetic circuit % and air supply system (not labeled). The cathode 22 includes a cathode filament 221 and two ceramic insulating pads 224 and 226. The magnetic circuit 26 forms a magnetic field in the discharge region 24, and the magnetic flux is emitted from the magnetic pole of the lower portion of the cathode 22 through the discharge region into the top magnetic pole 27. 1297736 When working from the source, the working gas (argon) and the reactive gas (such as oxygen) enter the discharge zone 24 from the gas supply line 21. At the same time, the cathode filament is heated to the hot electron emission temperature, and the anode 25 is applied with a positive potential. Under the action of the electric field, part of the electrons emitted by the cathode filament 221 migrate toward the anode 25 in a spiral motion along the magnetic lines of force, collide with the gas atom or the sub-particle in the discharge region, and ionize it. The electrons generated during the ionization process continue to migrate toward the anode 25, and the generated ions are accelerated by the discharge & 24 f field and neutralized with a portion of the electrons generated by the cathode filament 221, and then the ions are emitted from the ion source 2G. The ionizing body has a direct energy bombardment of the substrate to perform pre-bond cleaning, or bombarding the surface atoms of the film surface disk for energy exchange for ion-assisted coating. , = sub-assisted coating on the film atom impact of growth can make the spectrum of the film = particularly stable, water absorption reduction, refractive index increase and roughness reduction, = 疋 because the membrane bulk density increases after ion ore, the membrane becomes more Dense, cause, water! As the spectrum becomes less, the spectral characteristics are not drifted, and the refractive index becomes large. The anode of the ion ore concentrator described above has a tapered structure whose opening direction can accurately control the angle of ion emission to make it hit the base accurately. On the material 'and thus affect the control of coating quality. Therefore, it is necessary to provide a gateless ion plating device that accurately controls the ion emission angle and improves the coated product. ‘又口, 【Content】 The purpose of U Ming is to provide a gateless ion plating device that accurately controls the ion emission angle. The present invention provides a gateless ion assisted 1297736 device comprising an ion source, the ion source comprising: a discharge region; a magnetic circuit surrounding the discharge a gas supply system; an anode disposed below the discharge region; a cathode disposed above the discharge region and corresponding to the anode and an anode emission angle jade member disposed above the anode (4) = The piece is provided with a tapered through hole and is matched with the anode for controlling the (four) sub-emission angle. Compared with the prior art, the gateless ion plating device of the present invention adjusts the anode emission angle workpiece to control the ion emission angle by adjusting the position of the substrate and the substrate, thereby improving the quality of the substrate. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail with reference to the accompanying drawings and embodiments. Referring to the second figure, a gateless ion plating device of the present invention, and = electro-ion source: the ion source 30 includes: a discharge region 34 (: to), a magnetic circuit 36, the magnetic circuit 36 surrounds the discharge region Μ; - an unillustrated - anode 35, disposed under the discharge difference, 35 phases m is placed in the discharge region Above 34, with the above anode side, used to control the ion emission angle. The upper t-36 is set around the non-gate ion plating device, - the moon magnetic pole (not labeled), the magnet (not labeled), the outer magnet (not labeled 1297736 and the top magnets 364 and 366 are displayed on the next day) , magnet f--, / road 36 back magnetic pole (not marked body (not labeled) and top magnet 364 and moved 32 Γ Γ 32 including a cathode filament 321 and two ceramic insulation 324 road 36 ^ Tao Jing The magnetic top magnets 364 and 326 are respectively connected to the above-mentioned magnetic top magnets 364 * 366. The cathode filaments 321 are cranes =, = ymm ', and the two ends thereof are respectively connected to the two ceramic insulating pads 324 and 326 by bolts 322 to make the cathode filaments. The anode 35 is insulated from the other workpieces. The anode 35 is a cylindrical structure, and the groove of the tapered structure has a larger diameter than the upper one, and the larger taper is upward, corresponding to: The bottom of the tapered groove of the anode 35 is configured to be loaded with a film positive: circular: a fault 351. The lower portion of the anode 35 is provided with a gas supply plate 3: and the f pole 35 is connected to the gas supply plate by bolts (not shown). The gas supply plate 312 is provided with a plurality of gas supply pipes 8 - generally also provided with water two =,: a wide anode and a catastrophe - and others The piece is burned at a high temperature (4 no) to avoid the anode (four) guard 38, which is placed above the anode of the anode, and the lower == which opens a cone (four) 39 along the central axis. The taper, the hole 31 The diameter of the upper taper 391 and the lower taper 392 and the lower taper 391. The diameter of the large taper 392 is the same as the size of the larger taper of the above-mentioned anode tight groove, and the two tapers are closely matched with each other. ...&, forming the cavity' and the small angle of the anode-emitting angle workpiece 38 is the gathering and forming emission σ. The anode-emitting angle workpiece of the present invention can actually select a large taper with a different size and a small taper profile I297736. Different emission angles are used to control the emission angle. The ion source of the invention is the electrode source of the non-gate ion plating device, which is used in the vacuum environment to defend the gas and the reaction gas respectively from the complex number to the discharge area%, the working gas Chlorine gas is selected, the reaction is fine: 2. The magnetic field line is emitted from the magnetic circuit 36 at the lower portion of the cathode 32 into the top magnetic pole, 6=Shaw while the 'cathode filament 321 is heated to thermionic emission: the second 'anode 35 is applied with a positive potential. Under the action of the electric field, the cathode lamp: 1 part of the emission The sub-electrons pass in a spiral motion along the magnetic lines of force, and the conical through-holes 39 of the emission angle workpiece 38 migrate toward the anode, and collide with the gas atoms or molecules in the demining = Γ and ionize them. The electrons continue to migrate toward the anode 35, and the resulting ion-encapsulated region 34 is accelerated by the electric field, and passes through the tapered through-hole % of the anode-emitting angle of the workpiece 38 that has been adjusted to the emission angle, and is partially associated with the cathode filament. And then, forming a plasma from the ion assisted blood ur with a certain energy of the plasma beam to the substrate (not labeled) • the wire is cleaned (4), or bombarded the surface of the substrate film and the surface of the film surface for energy exchange for ion-assisted coating . The invention is constructed by using an anode above the anode to produce a variety of different angles of the anode emission angle workpiece, and the ion emission angle can be matched with the substrate to determine the position of the substrate. Pin 2 # is more efficient use of ion current and this way is not easy to hang on the anode replacement, and it is easy to disassemble and assemble when cleaning ions. Of course, it is also possible to directly form an anode having a shape of an anode-emitting workpiece by a bulk molding method. In addition, the present invention is not limited to the auxiliary plated 1297736 having a circular ion source with axisymmetry. The ion source of the present invention may have different shapes, and the axial direction may extend in the processing range. The source is perpendicular to the symmetry and thus the anode of the present invention. The circular evaporation source can be expanded or expanded, and the wide-piece can be adjusted according to the variation of the circular plating aid. The gateless ion source is used for plasma assisting before the auxiliary coating, and the substrate is cleaned in the multi-layered film; the better film layer can be obtained 离子 'Ion momentum is transmitted to the film being formed, and the film sound is poor. The structure of the pancreatic layer can be changed to::, ". The gateless ion source used for the auxiliary coating is used as the evaporate f atom and oxygen in the high-density plasma yield. Ionization, so that the reaction is complete, so that the loss of the film and the quality of the absorption: in the large diameter range, production uniformity, low absorption, high above, the invention has indeed met the requirements of the invention patent, according to the patent application The preferred embodiment of the present invention is not intended to limit the equivalent modifications or variations of the present invention in the spirit of the present invention; this J should be covered by the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view of a gateless ion plating device of the prior art. Fig. 2 is a schematic cross-sectional view of a gateless ion plating device of the present invention. 】 30 cathode @ + source 30 Drawing 32 1297736 Discharge Zone 34 Anode 35 Magnetic Circuit 36 Anode Emission Angle Workpiece 38' Tapered Through Hole 39 Air Supply Plate 312 Air Supply Pipeline 313 Cathode Filament 321 Bolt 322 Ceramic Insulation Pad 324, 326 坩埚 351 Top Magnet 364, 366 Upper Cone Mouth 391 lower cone 392 • ·
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