TW593368B - Photosensitive polymers including copolymer of alkyl vinyl ether and furanone and resist compositions containing the same - Google Patents

Abstract

A photosensitive polymer, which may be used to form a resist composition, includes a copolymer of alkyl vinyl ether and furanone. The copolymer is represented by the following formula: where R1 and R2 are independently a hydrogen atom or an alkyl group having 1-3 carbon atoms, and X is a linear or cyclic alkyl vinyl ether having at least one structure represented by the following formulae: wherein R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1-20 carbon atoms, y is an integer in the range of 1 to 4 inclusive, and R5 is a hydrogen atom or an alkyl or alkoxy group having 1-3 carbon atoms.

Description

^ 4—, (= 0 \ = 〇593368 A7 _____B7___ V. Description of the Invention (/) 1. Field of the Invention The present invention relates to a photosensitive polymer and a chemically amplified photoresist composition, and more specifically, the present invention It relates to a photosensitive polymer including a copolymer containing an alkyl vinyl ether and a photoresist composition containing the same. 2. Description of related arts When the bulk density and complexity of a semiconductor device are highly increased, a fine pattern is formed The ability to become more stringent. For example, in 1-Gigabit or more semiconductor devices, it is necessary to have a pattern size with a design rule of 0.2 microns or less. However, in the lithography process, the lower the Wavelength devices, such as ArF excimer lasers (193 nm) have become exposure light sources, which are better than traditional and higher wavelength KrF excimer lasers (248 nm). However, compared with traditional (KrF) photoresist In contrast, photoresist materials suitable for ArF excimer lasers suffer from many disadvantages. Most of the conventional ArF photoresist compositions contain polymers based on methacrylate groups. Among these polymers, A methacrylic acid copolymer having an alicyclic protecting group is suggested, which is represented by the following formula: The polymer has adamantyl group on its methacrylate main chain, which can enhance the resistance to dry uranium etching. Contains lactone group, which can improve the adhesion. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page).-. 线 _ 593368

___— __ 5 This paper size applies to China National Standard (CNS) A4 (21 × X 297 mm) A7 _ B7 5. Description of the invention (>). Result 'Improved the resolution and depth of focus of the photoresist. However, the resistance to dry worms is still weak, and severe line coarseness was observed after generating lines from the photoresist layer. Another disadvantage of the previous polymers is that the raw materials used to synthesize the polymers are expensive. In particular, a polymer having a lactone group which leads to improved adhesion, I is expensive to manufacture, making it difficult to practically use it as a photoresist. A cycloolefin-co-maleic anhydride (COMA) alternative polymer having the following formula has been proposed as another conventional photoresist composition:

In the production of certain copolymers, such as the COMA alternating polymer with the previous chemical formula, the production cost of the raw materials is very cheap, however, the yield of the polymer is significantly reduced. At the same time, the thinning of the original borneol contained in the main chain leads to high structural strength, and therefore it is difficult to handle. In an effort to overcome the aforementioned problems, polymers having various structures have been proposed in recent years, including polymerization of vinyl charm-co-malay liver (VEMA) copolymers with vinyl ether monomer units Thing. 0 (Please read the precautions on the back before filling this page) J ^ T ·-丨 line · 593368 A7 ___B7________ V. Description of the invention ($) where R is an acid-labile alicyclic group. Because the main chain of the VEMA copolymer has good flexibility, it is easier to perform the manufacturing process than the COMA copolymer. However, COMA and VEMA copolymers with maleic anhydride monomer units can be unstable in the presence of water content. In other words, in the case where the COMA or VEMA copolymer is stored for a long time and water is contained in the photoresist state, maleic anhydride is converted into maleic acid, which reduces the photoresist performance. At the same time, maleic anhydride contained in photoresist tends to be completely absorbed at the wavelength of 193nm ArF excimer laser, resulting in poor transmittance and reduced resolution. SUMMARY OF THE INVENTION The object of the present invention is to provide a photosensitive polymer, which exhibits favorable dry time resistance and good adhesion to the bottom layer, and is quite stable in the presence of water content, especially when used as a photoresist composition. Raw materials. Another object of the present invention is to provide a photoresist composition, which exhibits favorable dry time resistance, good adhesion to the bottom layer and improved storage stability, and can be used for optical lithography programs using 193nm and 248nm wavelength light sources. Provides high resolution. According to the first aspect of the present invention, the photosensitive polymer includes a copolymer of acrylamine and sulfamidine, which is represented by the following formula: (Please read the notes on the back first, and then write the script-'

R2 ^ O ^ ° ______6 This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 593368 A7 _____B7 V. Description of the invention (7) Where K and R2 are hydrogen atoms or have 1-3 carbons Atomic radical, and X is a linear or cyclic alkylethionic acid having a structure represented by at least the following formula: —CH——CH—

I I R3 0

I R4 and

R5 wherein R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1 to 20 carbon atoms, y is an integer of 1 to 4, and R5 is a hydrogen atom having an alkyl or alkoxy group of 1 to 3 carbon atoms. According to another aspect of the present invention, the photosensitive polymer includes the following copolymers: (a) a copolymer of ethanoic acid and arani, which is represented by the following formula: (Please read the precautions on the back before filling (This page) Order *-Line ·

Where K and R2 are each a hydrogen atom or an alkyl group having 1-3 carbon atoms, and X is a linear or cyclic alkyl vinyl ether having a structure represented by at least the following formula: -CH——CH-

I I R3 0

I R4 _________7 This paper size is applicable to China National Standard (CNS) A4 (21〇 X 297 mm) 593368 A7

Where R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbyl group having 1-20 carbon atoms, y is an integer from 1 to 4, and R5 is a hydrogen atom, a radical or oxygen group having 1-3 carbon atoms' And (b) a comonomer having an acid-labile substituent or a polar functional group. According to another aspect of the present invention, the photosensitive composition includes: (a) a photosensitive copolymer including the following copolymers: (al) a copolymer of an alkyl vinyl ether and a furanone, which is represented by the following formula: wherein R ! And R2 are a hydrogen atom or an alkyl group having i_3 carbon atoms, and X is a linear or cyclic alkyl vinyl ether having a structure represented by at least the following formula: (Please read the precautions on the back before filling this page )-丨 Line · and CHIO 丨 R4 I TR3

5 R This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 593368 A7 _ _B7_ V. Description of the invention (^) where R1 is a hydrogen atom or a methyl group, and R2 is a carbon atom with 1-20 Y is an integer of 1 to 4, and & is a hydrogen atom, a radical or an oxygen radical having u carbon atoms, and (a-2) a single unit having an acid-labile substituent or a polar functional group And (b) a photoacid generator (PAG). DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The basic structure of the polymer according to the present invention is an alternating copolymer of linear or cyclic alkyl vinyl ether and furanone. The basic structure can be used as a photosensitive polymer via copolymerization with a monomer unit having a photosensitive substituent such as a methacrylate or a methacrylate unit. Copolymers of alkyl vinyl ether and furanone can be easily obtained by conventional free radical polymerization. Useful polymerization methods include bulk polymerization and solution polymerization of a mixture of an alkyl vinyl ether and furanone mixed in a 1: 1 ratio. Typical free radical initiators, such as azobisisobutyronitrile (AIBN) or lauryl fluorenyl peroxide, can be used for free radical polymerization. During solution polymerization, a polar solvent (such as tetrahydrofuran (THF) or dioxane) or a non-polar solvent (such as cyclohexane) can be used. In particular, the photosensitive polymer according to the present invention includes a copolymer of an alkyl vinyl ether and a furanone, which is represented by the following formula: (Please read the precautions on the back before filling this page)-Line ·

1 where I and R2 are a hydrogen atom or an alkyl group having 1-3 carbon atoms, and X is a linear or cyclic alkyl vinyl ether having a structure represented by at least the following formula: ___9 —____ 2 This paper size applies China National Standard (CNS) A4 specification (210 X 297 mm) 593368 A7 CHIο—R4 I CR; 5. Description of the invention () and

Wherein R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1 to 20 carbon atoms, y is an integer of 1 to 4, and r5 is a hydrogen atom and an alkyl or alkoxy group having 1-3 carbon atoms. Preferably, R4 is selected from the group consisting of methyl, ethyl, 2-hydroxyethyl, n-butyl and isobutyl. Meanwhile, r5 is preferably methoxy or ethoxy. The photosensitive polymer according to the present invention also includes the following copolymers: (a) a copolymer of an alkyl vinyl ether and a furanone, which is represented by the following formula: wherein I and R2 are each a hydrogen atom or have 1-3 carbons Atomic alkyl group, and X is a linear or cyclic alkyl vinyl acid having a structure represented by at least the following formula:; —CH—CH—

I I R3 0

I R4 ___10 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) .- • Line · 593368 A7

Where R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbyl group having 1 to 20 carbon atoms, and y is an integer of 1 to 4, and Rs is a hydrogen atom, and a radical or alkoxy group having 3 to 3 carbon atoms; (b) A comonomer having an acid-labile substituent or a polar functional group. Preferably, the comonomer has an acrylate derivative or a methacrylate derivative, and the photosensitive polymer is represented by the following formula: R6 CIi2—ί 十

Η2 ^ (Τ ^ 0 I u c = o

I 0, wherein R 6 is a hydrogen atom or a methyl group, R t is an acid-labile hydrocarbon group having 2 to 20 carbon atoms, m / (m + n) is in a range of 0.1 to 0.9, and n / (m + n) is 0 · The range is from 1 to 0.9. Preferably, R? Is a third butyl or tetrahydropyranyl group. Meanwhile, R? May be a substituted or unsubstituted alicyclic hydrocarbon group, examples of which are 2-methyl-2-orbornyl, 2-ethyl, 2-orbornyl, 2-methyl_2-iso Bornyl, 2-ethyl-2-isobornyl, 8, methyl-8_tricyclo [5.2.ι · 〇2,6] decyl, 8_ethylbicyclo [5 · 2 · 1 · 〇 2,6] decyl, 2-methyladamantyl, 2-ethyl-2-adamantyl, 1-adamantylmethylethyl, 2-methyl_2_fluoranyl This paper is applicable to China National Standard (CNS) A4 specification (210 X 297 (please read the precautions on the back before filling this page) t ·. 593368 A7 _____B7 V. Description of the invention (j), or 2-ethyl-2-Weenyl. The photosensitive composition according to the present invention includes: (a) a photosensitive copolymer including the following copolymers: (al) a copolymer of an alkyl vinyl ether and a furanone, which is represented by the following formula: wherein Ri and R2 are each A gas atom or a radical having 1 to 3 carbon atoms, and X is a linear or cyclic radical vinyl ether having a structure represented by at least the following formula: —CH——CH—

I I R3 0

I R4 and (Please read the notes on the back before filling out this page)) 5J

Rs-line-where R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1-20 carbon atoms, y is an integer from 1 to 4, and R5 is a hydrogen atom, an alkyl group having 1-3 carbon atoms Or an alkoxy group, and (heart 2) a comonomer having an acid-labile substituent or a polar functional group, and (b) a photoacid generator (PAG). J Preferably, the comonomer has an acrylate derivative or a methacrylate derivative. At the same time, the weight-average molecular weight of the photosensitive polymer is preferably 1000- ___12____ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 593368 A7 ________B7__ 5. Description of the invention (θ) 100000. The amount of PAG is preferably% by weight based on the weight of the photosensitive polymer. Preferably, the PAG includes a triarylsulfonium salt, a diaryl iodonium salt, a sulfonate salt or a mixture thereof. More preferably, PAG includes triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium antimonate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium antimonate, methoxydi Phenyliodine gun trifluoromethanesulfonate, di-tert-butyldiphenyliodine gun trifluoromethanesulfonate, 2,6-dinitrobenzylsulfonate Dibasic acid salt), N-methylsulfonium imine trifluoromethane sulfonate, probenbornene-dicarboxyfluorine imine-trifluoromethane sulfonate, triphenylsulfonium nonafluoromethane sulfonate, two Phenyliodonine nonafluoromethanesulfonate, methoxydiphenyliodonine nonafluoromethanesulfonate, di-tert-butyldiphenyliodonine nonafluoromethanesulfonate, N-hydroxysuccinic acid Ammonium nonafluoromethane sulfonate, orthobornene dicarboximide-nonafluoromethane sulfonate, triphenylsulfonium PFOS (perfluorooctane sulfonate), diphenyliodine gun PFOS, methoxydi Phenyliodine gun PFOS, di-tert-butyldiphenyliodine gun trifluoromethanesulfonate, N-hydroxysuccinimide imide PFOS, orthobornene dicarboximide PFOS, or a mixture thereof. The photoresist composition may further include an organic base. The amount of the organic base is preferably from 0.01 to 2.0% by weight based on the weight of the photosensitive polymer. Preferably, the organic base comprises a single tertiary amine compound or a mixture of at least two tertiary amine compounds. Preferably, the organic base includes triethylamine, triisobutylamine, triisooctylamine, triisodecylamine, diethanolamine, triethanolamine, N-alkyl substituted pyrrolidone, N-substituted caprolactone Amidoamine, N-alkyl substituted pentolide, or mixtures thereof. ___13 _ This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)-丨 Line-593368 A7 B7 V. Description of the invention (l \) The barrier composition may further include 30 to 200 ppm of a surfactant Fen Example 1. Synthesis of a polymer 4.2

Add 0.82 g of AIBN, and then degas three times by thawing with a cryopump. The resulting reaction was polymerized at 65 ° C for about 24 hours and then precipitated with a 10-fold excess of isopropanol. The precipitate was redissolved in THF and precipitated again with isopropanol. The resulting precipitate was filtered and dried in a vacuum oven maintained at 50 ° C for 24 hours. As a result, the desired product was obtained in 80% yield. The weight average molecular weight (Mw) and polydispersity (Mw / Mn) of the obtained product were 1 1,000 and 1.8, respectively. Example 2 Synthesis of Copolymer

(Please read the precautions on the back before filling this page)-Line · 593368 A7 B7 V. Description of the invention (丨 >) 4.2 g of furanone and 5.0 g of isobutyl vinyl ether are the same as those in Example 1 Polymerized and purified to obtain the desired product in 85% yield. The weight average molecular weight (Mw) and polydispersity (Mw / Mn) of the obtained product were 10,100 and 1.74, respectively. Fenshi Example 3 Synthesis of ternary polymer

2.52 g of furanone, 2.1 g of dihydrofuran and 9.4 g of 2-methyl-adamantyl methacrylate were dissolved in 12 g of THF, and 0.82 g of AIBN was added, followed by degassing. The resulting reaction was polymerized at 65 ° C for about 24 hours, and then precipitated with a 10-fold excess of isopropanol. The precipitate was redissolved in THF and precipitated again with isopropanol. The resulting precipitate was filtered and dried in a vacuum oven maintained at 50 ° C for 24 hours. As a result, the desired product was obtained in 73% yield. The weight average molecular weight (Mw) and polydispersity (Mw / Mn) of the obtained product were 8000 and 1.95, respectively. 15 This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) (Please read the precautions on the back before filling this page)-

Lal ·. -Line · 593368 A7 B7 V. Description of the invention (〇) Rich Example 4 Ternary Hgj blending

CHa η: 〇〇 (Please read the notes on the back before filling out this page) 2.52 g of furanone, 3.0 g of butyl vinyl ether and 9.4 g of 2-methyl-adamantyl methacrylate are the same Polymerized in the manner of Example 3 and purified to obtain the desired product in 84% yield. The weight average molecular weight (Mw) and polydispersity (Mw / Mn) of the obtained product were 14000 and 1.72, respectively. Example 5 1.0 g of a terpolymer that can be synthesized in Example 3 as a photosensitizer composition and a lithographic component, as 0.02 g of triphenylsulfonium trifluoromethanesulfonate of PAG, and as organic 2 mg of triisodecylamine of the base was completely dissolved in 8.0 g of propylene glycol monoethyl ether acetate and filtered through a 0.2-micron membrane filter, thereby obtaining a photoresist composition. A silicon wafer having been treated with an organic anti-reflection coating (ARC) was coated with the obtained photoresist composition to a thickness of about 0.3 m. Thereafter, the obtained wafer was soft-baked at 120 ° C for 90 seconds, exposed using an ArF excimer laser stepper (NA = 0.6), and then subjected to PEB at 120 ° C for 90 seconds. This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) 16 593368 A7 ____B7 ___ V. Description of the invention (K) Then, the resulting product uses 2.38% by weight of tetramethylammonium hydroxide (TMAH) The solution development took about 60 seconds, thereby forming a photoresist pattern. As a result, the resolution of the 0.15 micron line and space pattern was formed with an exposure dose of 10 mJ / cm2. Example 6 Preparation of photoresist composition and lithographic performance The 1.0g terpolymer synthesized in Example 4 was used and a photoresist composition was prepared in the same manner as in Example 5. The lithographic performance of the photoresist composition was evaluated in the same manner as in Example 5. As a result, the resolution of the 0.15 micron line and space pattern was formed with an exposure dose of about 12.0 mJ / cm2. The photosensitive polymer according to the present invention basically comprises an alternating copolymer of linear or cyclic alkyl vinyl ether and furanone. However, the conventional photosensitive polymer containing maleic anhydride is unstable in water content and exhibits excessive absorption at a wavelength of 193 nm, and the polymer containing furanone (instead of maleic anhydride) according to the present invention can avoid these problems. At the same time, the photoresist composition obtained from the photosensitive polymer exhibits resistance to dry etching, favorable adhesion to the bottom layer, and favorable storage stability. Meanwhile, when applied to an optical lithography method having a light source of an untyped type having a wavelength of 193 nm and 248 nm, the photosensitive polymer constituting the photoresist composition according to the present invention can advantageously provide high resolution so that it can be favorably used. In next-generation semiconductor device manufacturing. ^ When the present invention has been particularly shown and explained with preferred specific examples, it will be understood that those skilled in the art can make changes in various forms and details without departing from the spirit and scope of the present invention as defined by the scope of the appended patents . —____ 17______ This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) 5J ·.

Claims (1)

593368 Scope of patent application 1. A photosensitive polymer including a copolymer of an alkyl vinyl ether and a furanone. The copolymer is represented by the following formula: Please read the back and its center and R2 are a hydrogen atom or a radical with 1-3 carbon atoms, and X is a linear or cyclic alkyl vinyl ether having a structure represented by at least the following formula: I transcript CH. —R3 CH—0—R4 Rs is D3, wherein R3 is a hydrogen atom or a methyl group, r4 is a hydrocarbon group having 1 to 20 carbon atoms, y is an integer of 1 to 4, and Rs is a hydrogen atom, or an alkyl group having 1-3 carbon atoms or Alkoxy. 2. The photosensitive polymer according to item 1 of the scope of patent application, wherein R4 is selected from the group consisting of methyl, ethyl, 2-hydroxyethyl, n-butyl and isobutyl. 3. The photosensitive polymer according to item 1 of the scope of patent application, wherein R5 is preferably methoxy or ethoxy. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593368 A8 B8 C8 D8 6. Application for patent scope 4. A photosensitive polymer, which includes the following copolymerization: (a) alkyl ethylene Copolymer of aryl ether and furanone, which is represented by the following formula: Where Ri and R2 are hydrogen atom or a radical with 1-3 carbon atoms, respectively, and X is a linear or cyclic radical ethylene glycol having a structure represented by at least the following formula: (Please read the precautions on the back first Reprint this page) TO—R4 1 CH—R3 Wherein R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1-20 carbon atoms, y is an integer from 1 to 4, and R5 is a hydrogen atom, and an alkyl or alkoxy group having 1-3 carbon atoms; And (b) a comonomer having an acid-labile substituent or a polar functional group. 5. The photosensitive polymer according to item 4 of the scope of the patent application, wherein R4 is selected from the group consisting of methyl, ethyl, 2-hydroxyethyl, n-butyl and isobutyl. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 593368 098895 ABCD 6. Patent application scope 6. Photosensitive polymer according to item 4 of the patent application scope, where Rs is methoxy or ethyl Oxygen. 7. The photosensitive polymer according to item 4 of the patent application, wherein the comonomer has an acrylate derivative or a methacrylate derivative, and the photosensitive polymer is represented by the following formula: Re (Please read the notes on the back before writing this page) I CH2-C- ^ c = oi ° x R? Where R6 is a hydrogen atom or a methyl group, and R7 is an acid-labile hydrocarbon group with 2-20 carbon atoms M / (m + n) is in the range of 0.1 to 0.9, and n / (m + n) is in the range of 0.1 to 0.9. Line 8. The photosensitive polymer according to item 7 of the scope of patent application, wherein R7 is a third butyl or tetrahydropyranyl group. 9. The photosensitive polymer according to item 7 of the scope of patent application, wherein R7 is a substituted or unsubstituted alicyclic hydrocarbon group. 10. The photosensitive polymer according to item 9 of the scope of the patent application, wherein 仏 is selected from the group consisting of 1 methyl-2-orbornyl, 2-ethyl-2-orbornyl, 2-methyl-2-isobornyl , 2-ethyl-2-isobornyl, 8-methyl I tricyclo ^ [5.2.1.02,6] decyl, 8-ethyl-8-tricyclo [5.2.1.02,6] decyl ' 2-methyl-2-adamantyl, 2-ethyl-2-adamantyl, 1-adamantyl-1-methylethyl, 2-methyl-2-fluoranyl or 2-ethyl In the group consisting of 2-fluorenyl. _ —, ^ — '&Quot; A " This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public attack ·) 593368 A8 B8 C8 ___ D8 VI. Application for patent scope 11, a photoresist composition It includes: (a) a photosensitive polymer including the following copolymers: (al) a polymer of an alkyl vinyl ether and a furanone, which is represented by the following formula: R2 ^ o where K and R2 are hydrogen, respectively Atoms or alkyl groups with 1-3 carbon atoms and X is a linear or cyclic alkyl ethyl acid having a structure represented by at least the following formula: —CH——CH— II Rs 0 I R4 and (please first (Read the notes on the reverse side and transcribe this page) Where R3 is a hydrogen atom or a methyl group, R4 is a hydrocarbon group having 1-20 carbon atoms, y is an integer from 1 to 4, and R5 is a hydrogen atom, or an alkyl group having 1-3 5 ^ 11 children or Alkoxy, and (a-2) a comonomer having an acid-labile substituent or a polar functional group; and (b) a photoacid generator (PAG). 12. The photoresist composition according to item 11 of the patent application, wherein R4 is selected from the group consisting of methyl, ethyl, 2-hydroxyethyl, n-butyl and isobutyl. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 593368 A8 B8 C8 D8 6. Application for patent scope 13, Photoresist composition according to item 11 of the patent scope, where R5 is methoxy Or ethoxy. 14. The photoresist composition according to item 11 of the application, wherein the comonomer has an acrylate derivative or a methacrylate derivative, and the photosensitive polymer is represented by the following formula: Re c = o ί ° χ R? Wherein R6 is a hydrogen atom or a methyl group, R7 is an acid-labile hydrocarbon group having 2-20 carbon atoms, m / (m + n) is in a range of 0.1 to 0.9, and n / (m + n) is 0.1 To the range of 0.9. 15. The photoresist composition according to item 14 of the application, wherein R7 is a third butyl or tetrahydropyranyl group. 16. The photoresist composition according to item 14 of the application, wherein R7 is a substituted or unsubstituted alicyclic hydrocarbon group. 17. The photoresist composition according to item 16 of the patent application, wherein R7. Is selected from 2-methyl-2-orbornyl, 2-ethyl-2-orbornyl, 2-methyl-2 -Isobornyl, 2-ethyl-2-isobornyl, 8-methyl-8-tricyclic J [5.2.1.02,6] decyl, 8-ethyl-8-tricyclic [5.2.1.02, 6] decyl, 2-methyl-2_adamantyl radical '2-ethyl-2-adamantyl radical' 1-adamantyl-1-methylethyl '2_methyl-2-fluorenyl or In the group consisting of 2-ethyl-2-fluorenyl. __________5___ This paper size is applicable to Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before writing this page) Order. 1 Line 028895 ABCD 593368 6. Scope of patent application (please read first (Notes on the back are reproduced on this page) 18. According to the photoresist composition of the scope of application for item 11, the weight average molecular weight of the photosensitive polymer is iooo-iooooo. 19. The photoresist composition according to item Π of the patent application range, wherein the amount of PAG is 1-15% by weight based on the weight of the photosensitive polymer. 20. The photoresist composition according to item 11 of the application, wherein PAG includes a triarylsulfonium salt ' diaryl iodogun salt, a sulfonate salt, or a mixture thereof. 21. The photoresist composition according to item 20 of the patent application, wherein PAG includes triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium antimonate, diphenyliodonium trifluoromethanesulfonate, Diphenyliodomonium antimonate, methoxydiphenyliodonium trifluoromethanesulfonate, di-thirdbutyldiphenyliodonium trifluoromethanesulfonate, 2,6-dinitrobenzyl Sulfonic acid salt, pyrogallol (alkyl sulfonate), N-hydroxysuccinimide trifluoromethane sulfonate, probenbornene-dicarboxyamidine-trifluoromethane sulfonate, three Phenyl nonafluoromethanesulfonate, diphenyliodonine nonafluoromethanesulfonate, methoxydiphenyliodonium nonafluoromethanesulfonate, di-tert-butyldiphenyliodine nonafluoro Methane sulfonate, N-hydroxysuccinimide nonafluoromethane sulfonate, orthobornene dicarboximide-nonafluoromethane sulfonate, triphenylsulfonium PFOS (perfluorooctane sulfonate), Diphenyl iodine gun PFOS, methoxydiphenyl iodine gun PFOS, di-third butyl diphenyl iodine gun trifluoromethanesulfonate, N-hydroxysuccinimide imide PFOS, orthobornene-dicarboxylate Hydrazone PFOS, or mixtures thereof22. The photoresist composition according to item 11 of the scope of patent application, which further includes an organic base. 23. According to the photoresist composition in the scope of application for patent No. 22, which ----------- ^ _____ This paper is again applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 593368 A8 B8 C8 D8 6. In the scope of patent application, based on the weight of the photosensitive polymer, the amount of organic base is preferably from 0.001 to 2.0% by weight. 24. The photoresist composition according to item 22 of the application, wherein the organic base includes a single tertiary amine compound or a mixture of at least two tertiary amine compounds. 25. The photoresist composition according to item 22 of the application, wherein the organic base includes triethylamine, triisobutylamine, triisooctylamine, triisodecylamine, diethanolamine, triethanolamine, N- Alkyl-substituted pyrrolidone, N-alkyl-substituted caprolactam, N-alkyl-substituted pentolide, or mixtures thereof. 26 'The photoresist composition according to item π of the patent application scope, further comprising 30 to 200 ppm of a surfactant. (Please read the precautions on the back before filling in this page), !!: Line 11… " 1 _ 7 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)