TW536449B - Method for preventing scratching wafers due to fracturing of polishing articles - Google Patents

Abstract

Disclosed is a method for preventing scratching wafers due to fracturing of polishing articles, which is applicable to a chemical-mechanical polishing device, comprising the steps of: providing a polishing pad comprising a plurality of polishing articles on a surface thereof to the chemical-mechanical polishing device for polishing wafer; adjusting the polishing articles such that they protrude from the surface of the polishing pad a predetermined height, wherein the predetermined height is 1/2 to 2/3 of the height of the polishing articles.

Description

536449

The present invention relates to a wafer-a method which can avoid the breakage of abrasives and two: mechanical polishing ', and more particularly, to a method in the electronic component manufacturing process, which is equivalent to the full circle. The flattening of the surface of the radon caused by the miniaturization of the exposure can be solved to the development of the finer limit; shallow question ... and the exposure etch first "all the flattening methods so far can be summarized into four types, such as back . The ordinary method of back to two is long VA mobilization method and selective growth method-rQ "J bed 疋 metal film, insulation film deposition and sputtering RIE); U7I; ^ / ^^^ Reacted Ion Etching electrode RF; i make: 仃: = film growth method is added in the film formation process, Li Zhiqian. The & mobilization method is to flatten PSG by high-temperature heat treatment (F10w), low-temperature heat treatment of BPSG, or coating with organic or non-fluorine g. The selection growth rule is to use the adjustment of the process, parts and parameters to make the metal film or insulation film grow at a specific position to achieve a flattening effect. In commercial applications, sog thermal treatment, plasma-assisted chemical vapor deposition (PECVD), and etch-back methods are currently the most representative examples. … However, the above-mentioned planarization methods have different planarization capabilities ranging from several micrometers to tens of micrometers depending on the difference of different metal film or insulating film materials, and the effect is extremely limited, which cannot meet the needs of continuous miniaturization process. Therefore, in the ultra large integrated circuit (ULSI) process, to achieve comprehensive flattening, only by means of the chemical mechanical polishing process (CMp). A conventional chemical mechanical polishing apparatus includes the following components, as shown in Fig. 1. The first is to provide a rotary grinding platform that can rotate automatically.

536449 V. Description of the invention (2) (automated rotating polishing platen), which consists of a rotating platform 10 and a polishing pad 60, wherein the rotating platform 10 is mainly used to support and rotate the polishing pad 60 (p. lishing pad). Secondly, a slurry supply system 20 is mainly for supplying slurry 30 (Slurry) to the surface of the grinding mill, and a rotating carrier 40 (spindle) with a rotating spindle 70 (rotating carrier) is mainly used for holding (h. Id) and rotate a wafer to be polished 50 (wafer), and the surface of the wafer 50 is brought into contact with the grinding polymer 30 and the polishing pad 60 to perform a chemical mechanical polishing process. In addition, according to the aforementioned conventional device, the rotary grinding table 10 and the wafer carrier 40 apply a pressure to the wafer in both directions and rotate independently of each other. The 30 component of the mortar used in the CMP process is generally composed of colloidal silica particles or alumina particles suspended in an acidic or experimental solution such as KOH or ΝΗ40Η. composition. The automatic slurry supply system is used to supply the slurry and maintain uniform wetting of the grinding slurry. As for the mechanism of the chemical mechanical polishing process, the chemical etching of the slurry etching solution is used to chemically polish (remove or modify) the chemical substances on the wafer surface. The particles are combined with a rotating polishing pad to perform mechanical polishing to mechanically remove chemically changed substances on the wafer surface. Therefore, whether the chemical polishing rate is increased or the mechanical polishing rate is increased, the overall pol ishing rate is increased.

〇503-6138T ^; tsmc2000-0779; dennis.ptd page 5 536449 V. Description of the invention (3) ------ Factors include pressure, the relative speed of each point on the wafer relative to the rotary polishing platform 丨 〇 ( relative velocity), the characteristics of the polishing pad 60 and the slurry 30, and the circuit pattern on the surface of the wafer 50. When the wafer 50 is pressed against the polishing pad 60, the polishing pad is deformed due to the maintenance of the polishing pad, which causes the pressure instability caused by the contact between the edge of the wafer 50 and the polishing pad 60. In addition, when the pressure is increased, the mechanical polishing rate is increased, and when the pressure is reduced, the mechanical polishing rate is decreased. Therefore, the appearance of the wafer (prof 1 le) also shows instability at the corresponding positions. When the contour of the wafer is undulating, it may further cause residues on the surface of the wafer 50, or excessive polishing may cause unevenness on the surface of the wafer 50. The conventional solution is to remove the defects on the surface of the planarized dielectric layer covering the conductive layer of the sub-micron integrated circuit structure by depositing a plasma-enhanced-chemical vapor-deposited polymer layer on The surface of the dielectric layer is planarized, and the micro-scratch caused by the trench filling CMP process. Then, an etching gas is introduced into the chemical vapor deposition reaction chamber, and the polymer deposited in the previous step is etched back to the bottom of the micro-scratch. However, this method requires a plasma-enhanced chemical vapor deposition polymer layer on the wafer after CMP to planarize the surface of the dielectric layer to fill the micro scratches caused by the CMP process, and then introduce an etching gas. In the chemical vapor deposition reaction chamber, the polymer deposited in the previous step is etched back to the bottom of the micro-scratch, which not only increases the manufacturing process but also increases the manufacturing cost. Ordinary CMP grinding will also be uneven due to the uneven pressure distribution of the diamond, 536449

V. Description of the invention (4) Different degrees of foolness' causes excessive local stress' diamond diamonds will be broken and scratched the wafer, and the length of the arc-shaped traces will fall off the inch leaf (inch) 'depth exceeds 3 microns (um ), It will reach the scrap standard exceeding ^ 8, plus when the chip falls and scratches the wafer, it will not be able to go to τ ', so the above problems need to be improved. In view of this, the main object of the present invention is to provide a method for preventing the wafer from being scratched due to the breakage of the abrasive material, which is based on the use of an automatic rotating poiishing platen—polishing

The height of the abrasive on the polishing pad is within a range. ^ = Breakage rate of the diamond to prevent scratching. Complete removal is achieved with short polishing pad life. Less

Another object of the present invention is to provide a chemical mechanical polishing device capable of preventing the generation of marks, including a rotary polishing platform for placing a polishing pad having a plurality of abrasives on a surface; a slurry supply system 'supply research Slurry to the surface of the rotary polishing platform; a rotary carrier that holds and rotates a wafer, and makes the wafer surface contact the slurry and rotary polishing platform for the chemical mechanical polishing process; and a pressure control circuit based on the wafer surface The polishing rate at different positions on the wafer provides a corresponding pressure distribution on the surface of the wafer; it is characterized in that the protruding heights of the plurality of abrasives on the polishing pad are adjusted to a predetermined range to provide wafer polishing; The protruding height of the plurality of abrasives is between 1/2 and 2/3 of the height of each abrasive. Brief description of the drawings Figure 1 is a schematic diagram of a conventional chemical mechanical polishing. FIG. 2 is a structural diagram of chemical mechanical polishing of the present invention.

536449 V. Description of the invention (5) Fig. 3 is a schematic diagram of the polishing pad of the present invention [Symbol Description] 10 30 50 70 Example 11: Grinding platform 60: research polymerization; 100: wafer; rotating spindle; 2 0 , 40: Grinding pulp supply system; 40, 80: rotating carrier; 60, 160: polishing pad; 162: abrasive. 2. The present invention provides a method for preventing the wafer from being scratched due to the breakage of the abrasive. As shown in the chemical mechanical polishing device of FIG. 2, it has a rotating grinding platform 11 for placing a plurality of abrasives on the surface. The polishing pad 160 of 162, a slurry supply system 40, are used to supply the slurry to the surface of the rotary polishing platform, a rotary carrier 80, hold and rotate a wafer 100, and make the wafer surface and the slurry 60 It is in contact with the polishing pad on the rotary polishing platform. The 60 ° is used for the chemical mechanical polishing process, and a pressure control circuit (not shown in the figure) provides a pressure distribution based on the polishing rate of different positions on the wafer surface. On the surface of the wafer. … This method is used to adjust the protruding height H of the plurality of abrasives 16 on one of the above-mentioned rotary grinding platforms 丨 丨 within a predetermined range. For example, the above-mentioned abrasive can be a diamond, providing the above For wafer research, after the abrasives have undergone the above adjustments, the local stress will not be excessive due to the different degrees of abrasives, and the burr diamond will be: and scratch the crystal B1. Yinyue Luoluo The present invention is to adjust the protruding high yield of a plurality of abrasives on the polishing pad. If the height of the protruding polishing pad of the abrasive is 1 {is 1/3, add the above ^

536449 V. Description of the invention (6) '-----— Chemical mechanical polishing, although there is no injury, but the life of the polishing pad is only U hours, not enough cost. At / 3, the polishing pad will scratch after 98 hours. … Therefore, the present invention adjusts the protruding high yield of the plurality of abrasives on the polishing pad to between 1/2 and 2/3 of the polishing pad. If the protrusion of the abrasive is within this range, install the above An CMP pad with an abrasive having a height within the above range is subjected to chemical mechanical polishing in the above CMP device to achieve the best chemical mechanical polishing. After testing 3,400 wafers, the scratch rate decreased from 138ppm per month to 19ppm, a reduction of 84%, and the life of the polishing pad can be maintained at the level of 75 hours. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (1)

536449 6. The scope of the application for patent is 1. A method to avoid mechanical fracture of abrasives due to fracture of abrasives, including / Θ said 0, can be used to provide a mechanical abrasive device with multiple abrasives on the surface for Polishing the wafers; The pads, pads, and pads 5 above are chemically intact for all of the above-mentioned abrasives, yielding a higher yield »-a predetermined high yield. And: they protrude 1/2 to 2/3 on the surface of the pad. It is also 2 of the height of the above-mentioned abrasives. · The method of scratching the wafer as described in item 1 of Shenyan's patent scope, 苴 φ μ, +, ^ to avoid breakage due to abrasives. Diamond for diamonds. • A kind of chemical machine to prevent scratches; R m θ Zhuang Yi 0 ′ to the mechanical grinding device, including a square rotary grinding platform to put one polishing pad; A multiple abrasive system on the A surface, Supply research and polymerization to the surface of rotary grinding platform; slurry and rotary grinding; A :: Asia: transfer-wafer, and make the wafer surface contact with the grinding and mouth for chemical mechanical polishing process; The pressure control circuit adjusts the surface appearance of the wafer according to the force distribution on the wafer surface at different positions on the wafer surface to adjust the height of each abrasive object to a predetermined range of the plurality of abrasives on the polishing pad, and then provides wafer polishing. For use; among 1/2 to 2/3 of the plurality of abrasives. 4. Chemicals to prevent scratches as described in the scope of patent application 536449 0503-6138TW; tsmc2000-0779; dennis.ptd p. 11