TW507015B - In-situ, preclean of wafers prior to a chemical vapor deposition titanium deposition step - Google Patents

Abstract

A multiple step chemical vapor deposition process for depositing a titanium film over a substrate. A first step of the deposition process includes a plasma pretreatment step in which a pretreatment gas including a hydrogen-containing gas and an inert gas are flowed into a deposition zone of a substrate processing chamber. During this first deposition stage, a plasma is formed from the pretreatment gas and maintained for at least about 5 seconds in order to etch any dielectric material left in the contact area of the substrate and clean the contact area prior to deposition of the titanium layer. Next, during a second deposition stage after the first stage, a titanium-containing source and a reduction agent are introduced into the deposition zone and the plasma formed in the first stage is maintained in order to deposit the titanium layer over the substrate. In a preferred embodiment, the hydrogen-containing source included in the pretreatment gas and the reduction agent in the process gas of the second deposition stage are the same continuous flow of H2.

Description

507015 A7 B7 V. Description of the invention () Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economics Field of the Invention: The invention relates to a refractory metal layer, which is accumulated on a semiconductor substrate. More specifically, the present invention relates to an improved chemical vapor deposition method and equipment 'for depositing a layer having improved sheet resistance uniformity and excellent bottom coverage at the contact. The present invention can be applied to various titanium deposition processes, and is particularly applicable to processes containing titanium tetrachloride (TiCl4) as a titanium source. BACKGROUND OF THE INVENTION One of the main steps in manufacturing modern semiconductor devices is to form various layers including a dielectric layer and a metal layer on a semiconductor substrate. As is known in the art, these layers can be deposited in these methods by chemical vapor deposition (CVD) or physical vapor deposition (PVD). In a conventional thermal CVD process, a reaction gas system is supplied to the substrate surface, and a thermally induced chemical reaction occurs thereon to produce a desired thin film. In a conventional plasma CVD process, a controlled plasma system is formed to decompose and / or stimulate the reaction species to produce the desired film. Generally speaking, the reaction rate in the heat and plasma process can be controlled by controlling one or more of the following factors: temperature, pressure, plasma density, reaction gas flow rate, power frequency, power level, room physical geometry And other factors. In the illustrated PVD system, a target (a plate of material to be deposited) is connected to a negative voltage source while a substrate supporting member facing the target is grounded, floating, biased, heated, cooled, or a combination thereof. (Direct current (DC) or radio frequency (RF)). A gas, such as argon, is typically introduced into a pvD system, and is typically maintained at a pressure between a few millitorr (mtorr) and about 100 mtorr. Page 4 This paper's dimensions apply Chinese national standards ( CNS) A4 specification (210X297 public director) (Please read the notes on the back first

This page) Order 507015 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (to provide a medium in which a luminous discharge can be initiated and maintained. When the luminous discharge starts, positive ions hit the target And, the passive atoms of the target atoms are removed. These target atoms are then condensed into a thin film on the substrate positioned on the substrate support. Since the semiconductor device was introduced decades ago, its geometric size has been greatly improved. Decrease. Today's wafer manufacturing plants are currently used to produce devices with characteristic sizes of 0.5 microns or even G.35 microns. Tomorrow's manufacturing plants will soon produce devices with smaller characteristic sizes. Because the characteristics of the devices become smaller And accumulation density increase, events that were not previously considered a problem by the industry • k: becomes important and needs to be considered. For example, devices with high accumulation density have high aspect ratio characteristics (for example, 0 · 35 Micron characteristic size device, 〆 or larger wood width ratio). (Aspect ratio is defined as the height-to-width ratio of two adjacent steps). High aspect ratio characteristics For example, the gap needs to be able to be properly filled with deposited layers in many applications. The stringent requirements for manufacturing these high-integration packages have increased, and traditional substrate processing systems have become unable to meet these requirements. In addition, when the device is designed into a lamp, More advanced capabilities are needed in substrate processing systems to deposit thin films with the characteristics needed to achieve these devices. For example, the increased use of titanium is used in integrated circuit manufacturing processes. Titanium used in semiconductor devices Has many desirable properties. Titanium can be used as a diffusion barrier between, for example, gold welding heat and a semiconductor to prevent an atomic species from migrating into the lower layer. At the same time, titanium can also be used as an improvement in two layers, such as Adhesiveness between silicon and aluminum. Furthermore, when used as an alloy with silicon, the use of '> fragmentation' (TiSix) can, for example, form an ohmic contact. A precautionary note for reading your fate :

Description of the Invention: A commonly used type of film deposition system is a machine-plating (PVD) system. However, these money-key systems are often not suitable for forming devices with high processing requirements. Specifically, sputter plating may be worse than these devices ^ previously deposited layers and structures, resulting in performance and / or yield issues. The Qin sputtering system may not be able to deposit uniform conformal layers between high-aspect-ratio ratios because of the shadow effect that occurs during sputtering. In contrast to a sputtering system, a plasma enhanced chemical vapor deposition (PECVD) system can be more suitable for forming a titanium film on a substrate having a high aspect ratio gap. As is known, a plasma of a mixture of ions and gas molecules can be applied to the processing gas in the deposition chamber by applying energy, such as radio frequency (RF) energy, under appropriate conditions such as chamber pressure, room temperature, RF, and others. , And be shaped. The plasma reaches a threshold density to form a self-limiting condition called a glow discharge (often referred to as " impact " or " excitation " plasma). This RF energy is enhanced by the energy condition of the molecules in the processing gas. Ion species are formed by molecules. Excited molecules and ion species are typically more active than the process gas, so they can form the desired film. Advantageously, the plasma also enhances the mobility of the reaction species on the surface of the integrated substrate. Titanium film formation and formation of a film with good gap-filling ability. A known CVD method for depositing titanium films includes forming a plasma from a process gas. In a standard PECVD process, the gas includes a TiCl4 gas source and a hydrogen reducing agent. The TiCl4 / H2 PECVD process results in the deposition of titanium thin films with good through-hole filling, uniformity and contact characteristics, allowing the films to be used to fabricate many different commercial integrated circuits. Although these processes are already suitable for certain processes, for TiCl4 and H2 deposition of titanium film

/ U1 J / U1 J A7 B7 V. Explanation of the invention (Improvement of uniformity and contact resistance of through-hole filling ’is still ongoing.

The present invention provides an improved CM for a titanium thin film to form a modified titanium thin film. According to the method of the present invention, there are multiple processes for depositing a titanium film on a substrate. Typically, the present invention < titanium layer system > is deposited on the contact area through the contact region via an oxide second film, but it can be used at the same time for its one-step application step jlT step. The first step includes a plasma pretreatment. Second, a pretreatment gas with a hydrogen-containing gas and an inert gas system M are deposited into the deposition area of the substrate processing chamber. During the first deposition stage, # 1 The Printing Cooperative Department of the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs is formed of pretreatment gas and is maintained for at least 5 seconds to _residue: the dielectric material of the contact area of the substrate, and deposit titanium Before layering, clear 2 contact areas. Furthermore, after the first stage, during the second deposition stage, a titanium-containing source and a reducing agent system were introduced into the deposition area and the electric paddle system formed in the first stage = was maintained to deposit a titanium layer on the substrate . In a better case: the pretreatment gas and the reducing agent contained in the processing gas in the first deposition stage are the same hydrogen fluid. Meanwhile, in another embodiment, the plasma pre-processing step is maintained for about 5 to 60 seconds. Alternatively, the titanium layer may be passivated to avoid contamination from related impurities such as oxygen and / or carbon < 2 gas. Passivation is accomplished by providing—or two or less of the following steps: (1) nitrogen flow and 7 or (2) impacting a nitrogen plasma near titanium. Page 7 of this paper-grade Langzhongguanjia Standard (CNS) A #! # (21GX297 mm) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs. 5. Description of the Invention (II: Product: Domain. Exposing the & layer to nitrogen formation-thin layer of nitridation), nitrogen The chemical layer is purified, which prevents impurities from being absorbed, so the titanium layer has stable characteristics, such as surface resistance and provides a surface of the glass foot for subsequent deposition of the titanium nitride barrier layer. The Γ skin is moved to another processing chamber. As a subsequent processing, by providing -stable, purified layer, the wafer can be exposed to the atmosphere without contamination of the layer (danger. As a result, the room of the present invention can Used as a single-titanium thin film deposition chamber. According to another embodiment of the present invention, the flow of the titanium source begins at least 6 to 8 seconds before the second phase. However, the inversion is introduced into the flow into the 1 This flow is diverted to the pre-pumping pipeline. In this way, in the deposition step < The flow rate of Qinyuan is stabilized to further improve / uniform the thin film uniformity between the thin films deposited on most wafers during wafer processing. These and other embodiments of the present invention, and Its advantages and characteristics will be explained in detail by referring to the following articles and drawings. Figure Jian Jian Rui Ming: Figure 1A is a sectional view of an embodiment of a simplified plasma enhanced chemical vapor deposition system according to the present invention. 罘 1B The figure is a simplified cross-sectional view of a ceramic holder 36 shown in Fig. 1A according to an embodiment of the present invention. Fig. 1C is a deposition chamber 3 shown in Fig. 1A according to an embodiment of the present invention. The simplified cross-sectional view of 0. The 1D drawing is between the user and a processing machine, which can control the depth of the present invention. Page 8 This paper size is applicable to China National Standard (CNS) A4 specification (210X: W mm) Please read first % Note

Order " f 507015 A7 B7 Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. The interface of the product description system. Fig. 1E shows a simplified partial cross-sectional view of the flow of the fin waves flowing through the wafer; 4 South 4 #, 9 and the exhaust system according to an embodiment of the present invention. FIG. 1F is a block diagram showing the architecture control structure of the system control software according to the conventional embodiment of Ming Yu ^ + Mingmingzu. Fig. 2A is a simplified cross-sectional view illustrating a contact structure in which a titanium layer deposited according to the present invention can be used. Figure 2B is a cross-sectional view of the formation of defects in the contact structure. Figure 3 is a flowchart of a processing procedure for depositing a titanium layer according to the present invention. Fig. 4 is a diagram showing the measurement of reflected power as a function of time and deposition length during the chamber cleaning step. Figures 5A and 5B are thin and film thickness measurements, illustrating the experimental results of the present invention. Drawing ## Description: 4 Select remote plasma system 5 Low-frequency RF power supply 6 Heat exchange system 10 Chemical vapor deposition system 22 Built-in electrode 26 Ceramic support handle 28 Water-cooled shaft 30 Reaction chamber 32 Bracket 33 Heating element 36 Wafer 38 Pick-up pin 40 Air jet head 42 Path 44 Central gas inlet 45 Inlet cover 46 Flow restriction ring 48 Disc manifold Page 9 This paper is applicable to China National Standard (CNS) A4 (210X297) ) U7〇l5 5. Description of the invention (52) Baffle plate 54 Disc alarm 56 Valve 58 Processing area 60 Exhaust vent 64 Ceramic ring 66 Chamber cover 69 Flange 70 Chamber cover gasket 72 Gasket 74 Exhaust aperture 76 Aspirator 78 Valve 80 Exhaust port 82 Vacuum pump S3 throttle 85 Processor 86 Memory 88 Vacuum system 89 Gas delivery system 90 Gas supply panel 91 Gas source 200 Oxidation layer 205 Substrate 210 Contact hole 215 Titanium layer 220 Nitriding Titanium layer 225 Ming layer Γ Please read the notes on the back t ^ w! This page, >-Order printed by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs page 10 ___ Detailed description: I. Introduction to this Ming was allowed to deposit an improved titanium thin film. By pre-treating it, the titanium thin film was pretreated with a plasma step on the Gary substrate. ^ JL · At the same time, this plasma pretreatment step was found to be particularly useful. Used as part of a multi-layer stack (eg, titanium / titanium nitride stack). One of the several layers of the titanium body substrate is made into an ohmic contact in the contact region etched by the sintered layer & . Plasma pretreatment steps: Residue the dielectric material in the ^ dielectric plane area and remove the contact area before the titanium plate contacts before this titanium layer. This paper applies the Chinese National Standard (CNS) A4 inspection (297-year-old 2nd birthday) 507015 A7 B7 5. Description of the invention () After the completion of the plasma pretreatment step, the titanium layer can be introduced with a titanium-containing gas & source At the same time, the previously formed plasma is maintained for deposition. The titanium layer deposited by the method of the present invention is suitable for the fabrication of integrated circuits having a characteristic size of 0.35 μm to 0.11 μm or less. At the same time, the present invention can be used to deposit titanium films in a CVD chamber that is conventionally designed using currently available gases. II. Illustrating a CVD Chamber FIG. 1A illustrates an embodiment of a simplified parallel plate chemical vapor deposition (CVD) system iO, in which a titanium layer according to the present invention can be deposited. The CVD system 10 includes a reaction chamber 30, which receives gas from a gas distribution system 89 via gas lines 92A-C (also other lines, but not shown). A true system 8 8 can be used to maintain a specified pressure in the chamber, remove gas by-products, and release gas from the chamber. The low-frequency RF power supply 5 provides RF power to the chamber, so that a deposition slurry is formed from the deposition gas during deposition, and a plasma is formed from the chamber cleaning gas during the chamber cleaning operation. A heat exchange system 6 uses a liquid heat transfer medium, such as water or a water-glycol mixture, to remove heat from the reaction chamber and keep some parts of the chamber properly cooled to maintain the room temperature at a stable temperature. Process temperature, or if necessary, a part of the heating chamber-a processor 85, according to instructions stored in memory 86, via control lines 3, 3A-D (only part of which is shown) control room and sub-system Operation. The gas distribution system, the system 89 includes a t-body supply panel 90 and a gas or liquid source 91A-C (if necessary, other sources can be added), the sources include (please read the precautions on the back first. (This page) Ordered by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs

507015 A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () Gases or liquids that can be changed depending on the intended treatment for a particular application. The liquid source can be kept at a temperature much higher than the indoor temperature to reduce the change in source temperature caused by the temperature change in the plutonium. The gas supply panel 90 has a mixing system, which receives a deposition process and a carrier gas (or a gasified liquid) from a source 91A_C for mixing and passing through the supply lines 92A-c; it is sent to the gas feed cover 45 < center The gas inlet 44. The liquid source can be heated to provide steam at a pressure of S: operating pressure, or a carrier gas such as helium, argon, or nitrogen 'can be bubbled through a liquid (or heated liquid) to produce a vapor. In general, the supply line for each process gas includes a shut-off valve (not shown) that can be used to automatically or manually shut off the process gas flow, and a mass flow controller (not shown). Gas or liquid flows through the supply line. When toxic gases (such as ozone or autogenous gas) are used in the process, several shut-off valves can be positioned in each gas supply line in a conventional architecture. Contains deposits such as tetrachloride (TicI #) steam, hydrogen (H2), helium (He), argon (Ar), and nitrogen (No and / or other dopants or reaction sources) that are supplied to the reaction chamber and The rate of the carrier gas is controlled simultaneously by a liquid or gas mass flow controller (MFC) (not shown) and / or a valve (not shown). In a preferred embodiment, a gas mixing system (not shown) Contains a liquid jet system for vaporizing the reaction liquid (such as TiC "). A liquid jet system is preferred because it provides a comparison of the reaction liquid introduced into the gas mixing system compared to a foamed source. The vaporized gas is then mixed in a gas panel with a carrier gas, such as helium, before being transferred to the supply line. Of course, it has been recognized that other components can also be used as a deposition source. Heat exchange System 6 sends coolant to various components in chamber 30. _____12th (please read the precautions on the back before IPr page) 丨 -_ · Then,? Τ

This paper is again applicable to China National Standard (CNS) A4 (210X297 mm) 507015 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () To cool these components during high temperature processing. The heat exchange system 6 operates to reduce the temperature of these components to reduce unwanted deposits on these components due to high temperature processing. The heat exchange system 6 includes a connection line (not shown) 'which supplies cooling water through a cooling manifold (not shown) that transfers the coolant to the gas-a-knife distribution system, which includes a panel 4 q (described below). A water flow detector detects the flow of water from a heat exchanger (not shown) to seal the assembly. A resistive heating bracket 32 supports a wafer 36 in a wafer bag 34. As shown in Figure 1B, it is a simplified cross-sectional view of the bracket 32. The bracket 32 includes a built-in electrode 22, such as a built-in molybdenum mesh, and a heated 7G member 33, such as a built-in molybdenum. Coil. The bracket 32 is preferably made of aluminum nitride to withstand high processing temperatures and is preferably diffusion bonded to a ceramic support shank, which is fixed to a water-cooled aluminum shaft 28 (not shown in FIG. 1B, but (Shown in Figure 1C), the shaft is engaged to a lift motor. The ceramic support shank 26 and the aluminum shaft 28 have a central channel, which is occupied by a nickel rod 25, which grounds the electrode 22. The central channel system is maintained at atmospheric pressure to prevent corrosion from occurring in the metal-to-metal connection. The ceramic material bracket 32 is manufactured to provide a uniform capacitance value. The uniform depth of the electrode 22 is preferably positioned at a minimum depth by the built-in RF electrode 22 under the surface of the substrate support. The depth depends on the ceramic material. Material to provide maximum capacitance while avoiding cracking or peeling of the thin ceramic layer covering the RF electrode 22. In one embodiment, the RF electrode 22 is built in 40 mils below the upper surface of the bracket 32. "Other details of the ceramic bracket 32 are described in a commonly-applied US patent filed on December 1, 1997. Page 13 of this case applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back β to write this page) Order 7015 A7 — a " _________ B7 V. Description of the invention () ~ ^ -—, it was named Hybrid RF CVE ^ S and Equipment ", with Sebastian Rosie's # 大 柏柏 as co-inventor, the case is hereby incorporated by reference. The bracket 32T is moved vertically between the processing position (shown in FIG. 1C) and the low-load position (not shown) using a self-propelled machine. The mechanism is described in detail in the commonly assigned US patent application. No. 08 / 738,42, the application was named on October 25, 1996, the self-aligned lifting mechanism, the disclosure of this case is incorporated as a reference. Refer to Figure 10, pick Pins 38 (only two are shown) are slidable in the bracket 32 with a tapered head at the upper end so that they will not fall. The lower end of the picking pin 38 can be engaged with a vertically movable picking ring 39, so Can be picked up on the surface of the bracket. A mechanical blade (not shown) in the loading position (slightly below a slit valve 56) inside the bracket 32 is fitted with a picking pin and a picking ring to pass The slit valve 56 conveys the wafer 36 into and out of the chamber 30, and the chamber may be vacuum-sealed to prevent airflow from flowing into or out of the chamber through the slit valve 56. The pick-up pin 38 raises the inserted wafer (not shown) and leaves The mechanical blade, then, the tray rises and raises the wafer away from the pick-up pin and onto the tray A suitable mechanical transfer assembly is described in US Pat. No. 4,951,601, which was jointly assigned to Ma Dan, and its complete disclosure is incorporated as a reference. The carrier 32 then lifts the wafer 36 Entering the processing position, it is close to a gas distribution panel (hereinafter referred to as a jet head) 40, which contains a large number of holes or channels 42 for injecting the processing gas into the processing area 58. The processing gas system passes through the gas feed cover plate The central gas inlet 44 in 45 is injected into the chamber 30, to the first dish-shaped manifold 43, and because of these through the baffle (or barrier plate 52) on page η, this paper standard applies to China National Standard (CNS) Α4 Specifications (210 × 297 mm) " (Please read the note on the back page first.). ¾. Order printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 507015 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economics A7 ______ B7 V. Invention Explanation () Channel 50 to the second dish-type manifold 54. As indicated by the arrow, the processing gas enters the processing area 58 (which is called "deposition") between the jet head and the bracket due to the hole 42 of the jet head 40. Zone "), to Reacts to the surface of the wafer 36. The process gas by-product then flows radially outwardly across the edge of the wafer 36 and passes through a flow restriction ring 46 (which will be described in more detail later). By-products are deposited on the carrier when the carrier is in the processing position. 32 above the edge. Therefore, the processing gas flows through a sucker hole 50 formed on the restriction ring 46 and between the ring-shaped insulators 53 and enters the suction channel 60. When entering the exhaust passage 60, the exhaust system is circulated around the processing chamber to be evacuated by the vacuum pump 82. The exhaust passage 60 is connected to the air extractor 76 via an exhaust hole 74. The exhaust aperture 74 is limited to the flow rate between the exhaust vent and the extractor. A valve 78 manages the gate through the exhaust vent hole 80 to the pump pump 82. A system controller (not shown in the figure) is used to control the throttle valve 8 3 according to a pressure control program stored in a memory (not shown), which is compared with a pressure sensor (not shown) For example, the measurement signal of the pressure gauge is compared with the value stored in the memory or generated according to the control program. The sides of the ring-shaped suction channel 60 are roughly defined by a ceramic ring 64, a chamber cover lining 72, and a ring insulator 53. Fig. 1E is a simple partial cross-sectional perspective view of the dry rack 32, the flow restricting ring 46, the gaskets 70 and 72, the insulator 53, the ceramic material ring 64, and the exhaust air duct 60. The illustration shows that the processing gas from the nozzle 42 in the air-jet head 40 flows to the wafer 36, and then, it flows 84 to the wafer 36 radially. Subsequently, the gas flow is reflected upward above the restriction ring 46 into the extraction channel 60. In the suction channel 60, the gas flow is along the circumferential path 86 to the vacuum pump. This paper is suitable for (CNS) 8 4 Lin (21〇 / 297 mm 1 ^ --- (Please read the precautions on the back first Page) -1 ^ 507015 A7 B7 V. Description of the invention () The extraction channel 60 and its components are designed to reduce the effect of unwanted film deposition by directing the process gas and by-products into the exhaust system. The flow forms " static zones ", in which only a small amount of gas movement occurs. These static zones are similar to gas blowing zones, in which reactive gases occur in the zone and reduce unwanted deposits. At the same time, gas blowing (for example, Argon) is introduced into critical areas of the zone, such as ceramic parts, and cross-heated edges and back surfaces by gas injection (not shown) to reduce unwanted deposition on these areas. On the carrier and other parts of the chamber The unwanted deposition system is reduced in other ways. To be clear, the flow restriction ring 46 reduces gas outflow from the bracket to 1: bottom. According to an embodiment of the present invention, the deposition using Ticl4 (as detailed below) and titanium has Flow rate is much higher than with Transfer method in traditional deposition systems that form other titanium films. In a preferred implementation suitable for titanium deposition, the flow restriction ring 46 is made of fused silica because the material has a relatively low thermal conductivity and because it is Non-conductive. In another embodiment, the 'flow limiter ring can be made of titanium for the deposition of titanium-containing layers, because the ring material will not contaminate the deposited layer. In various embodiments, the limiter ring covers the bracket And edges, such that unwanted thin films are deposited on the ring, rather than on the cradle or on the bottom of the chamber. Advantageously, the flow limiting ring reduces the risk of unwanted deposition (and related issues) 'Otherwise, its Occurs at higher flow rates. The chamber cover 66 can be easily removed for cleaning, allowing access to a relatively inexpensive confinement ring, which will be picked up and cleaned using chemicals and / or mechanical treatment. Refer again to section Figure 1A, the flow restriction ring 46 can be supported by the bracket 32 during processing. When the bracket is lowered for wafer unloading and loading, page 16 Winter Paper Standard General T Country Standard (CNS)) A4 size (210X297 mm) (Please read the note on the back page first) 舄 订 · Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs ^ 7015 A7 ^ _B7 ____ 5. Description of the invention The ceramic ring 64 in the flange 69. When the gantry supporting the next wafer is lifted to the processing position, it picks up the flow restriction ring. The pressure in the titanium-treated chamber according to the embodiment of the present invention, Gravity is sufficient to support (place on the wafer package) the wafer and the retaining ring on the holder. The motor and optical sensor (not shown) are used to move and determine movable machinery such as the throttle valve 83 and the bracket 32 Position of the component. A bellows (not shown) attached to the bottom of the rack 32 and the chamber body 76 forms a movable air-tight seal next to the bracket. Contains an optional remote plasma system 4 (which is used to provide a room cleaning function using a remote plasma formed by, for example, a microwave source) a carriage picking system 'motor' gate valve 'plasma system and other systems The components are controlled by the processor 85 on the control lines 3 and 3A-3D, and only some of the control lines are shown. The processor 85 executes system control software, which is a computer program storing a memory 86 connected to the processor 85. Preferably, the memory 86 may be a hard disk drive. Of course, the memory 86 may be other memories. In addition to the hard disk drive (e.g., memory 86), the CVD apparatus 10 in a particular embodiment includes a floppy disk drive and a card holder. The processor 85 operates under the control of the system control software. The software includes a command group, which indicates the gas, gas flow, chamber pressure, chamber temperature, RF power level, heater bracket position, heater temperature, and other parameters for specific processing. The timing of 'mixing. For example, these other computer programs stored in other memory include, for example, a floppy disk or other computer product inserted into a disk drive or other suitable device, which can be used to operate the processor 85. The system control software will be described below. The card holder contains a single-chip computer, analog and digital input / output boards, interface boards, and stepper motor control boards. __ Page 17 (CNS) (210X297 / ^ 1) " " " " " " " ~ (Please read the precautions on the back first

Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 507015 A7 __B7 V. Description of the Invention () The various components of the CVD equipment 10 conform to the VISA module European standard (Vme), which defines the size and type of boards, cards and connectors. The VME standard also defines a bus structure with 16-bit data buses and 24-bit addressing buses. The interface between the user and the processor 85 is via a CRT monitor 93a and a light pen 93b (shown in FIG. 1D), which is a schematic diagram of the system monitor used for the CVD device 10. One of the chamber systems. The CVD device 10 is preferably attached to the host unit 95, which contains and provides electrical, takeover, and other support functions for the device 10. Exemplary embodiments exemplifying that the host unit is compatible with the CVD apparatus 10 are preeisiON 5000TM, Centura 5 200TM, and Endura 5 500TM systems, which are commercially available from Applied Materials, Inc. of Santa Cala, California. Multi-chamber systems have the ability to transfer wafers between their chambers without breaking the vacuum without exposing wafers to moisture or other contaminants in the multi-chamber system. The advantage of a multi-chamber system is that different chambers of the multi-chamber system can be used for different purposes throughout the process. For example, in the preferred embodiment of the present invention, one chamber is used for CVD deposition of a titanium film and the other is used for CVD deposition of a titanium nitride film. In this way, the deposition of the titanium / nitride 'stack can be used together to form a contact structure as discussed in FIG. 2A. The system can be continuously performed in a multi-chamber system, thereby preventing when wafers are transferred to various Separation of individual chambers (not a multi-chamber system) for wafer contamination when different parts of the titanium / titanium nitride stack are processed. In the preferred embodiment, two monitors 93a are used, one installed on the clean room wall 'for the operator and the other behind the wall surface for the service technician. The two monitors 93a display the same information at the same time, but only ________ page 18 This paper size is applicable to China National Standards (CNS) 8 4 specifications (21 × 297 mm) (Please read the precautions on the back first

, Tr Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs printed five A7 B7, invention description (Light pen 93b can be used. Light pen 93b is detected by the light sensor in the pen tip by CRT · ,,, The light emitted by the indicator. To select a specific screen or function, the operator touches a designated area of the display screen and presses the button on the pen 93b. The area touched changes its bright color, or a new list Or the screen is displayed to confirm the communication between the light pen and the display screen. Of course, other devices, such as a keyboard, mouse or other pointing or communication device, can be used or replaced with the light pen 93b to allow the user to communicate with the processor 85 Communication. The process used to deposit the film and clean room is implemented using a computer program product that is executed by processor 85 (Figure 1A). The computer code can be read by any conventional computer-readable program. Languages, such as 68000 combinatorial languages, c, c ++, pascai or evangelism or other languages. Suitable codes are created using a traditional text editor. Into a single file or multiple files and stored in, for example, a computer's memory & system, a computer usable medium, such as a computer's memory system. If the rounded code text is a high-level language, the code is compiled The resulting code is then linked to the destination code of the pre-edited window library routine. In order to execute the linked compilation destination code, the system user calls the destination code so that the computer system loads the code in memory. Then, the CPU reads the code Take and execute the code to perform the tasks specified in the program. Figure 1F shows an example block diagram of the basic control structure of the computer program 160. A user responds to the display on a CRT monitor by using a light pen interface. Menus and screens, and enter a number of processing groups and number of processing rooms into a processing selector subroutine 161. This processing group is a predetermined group of processing parameters required to perform a specific process and is indicated by the predetermined set number. Page 19 This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm) (Please read the notes on the back first

This page), order · 507015 A7 B7 V. Description of the invention (Identified by the subselection program 161 printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ⑴ Identification of the desired processing room, ^ and (11) need to be used to operate the desired The set of processing parameters that the processing chamber wants to process. The processing parameters used to perform a particular process are related to the processing conditions, such as the composition of the process gas and the flow rate, temperature, pressure, and plasma conditions, such as RF bias power levels And low-frequency RF frequencies (except for the level of microwave-generated power for the level of an embodiment equipped with a remote microwave plasma system) cooling gas pressure and wall temperature. In some embodiments, this may be more than A processing selector subroutine. The processing parameters are provided to the user in a list manner and are input by the light pen / CRT monitoring interface. The signals for monitoring processing are provided by the analog input of the system controller and the digital input board, and The signals used to control the processing are output on the analog output and digital output boards of the integrated controller 10. A system program subroutine 162 includes a processing room for identifying and processing. Select Tian |】 The processing parameter group of program 1 6 1 and the code used to control the processing of 1. The multi-user can enter the processing group number and office number, or one user can enter the multi-processing group number and A processing room number, or a single user can enter multiple processing setting numbers and processing room numbers, so that the sequential subroutine 162 operates to sort the selected processing in the desired order. Preferably, the 'sequential programming 1 62 contains a program Code to perform the following steps: Monitor the operation of the processing room to determine whether the rooms are being used, (Π) determine which processing is being used and what processing is being performed, and (丨 丨 丨) based on where available and execute Process type to perform the desired process. Traditional monitoring process 1 methods can be used, for example, turn-by-turn monitoring. When scheduling which process is performed, the sequence subroutine 162 can be designed to take into account the use of the system. Each theorem Theorem (Please read the notes on the back first

Order

507015 A7 B7 V. Description of the invention (the status of the processing room used and the status of the processing to be selected, or the "age" required by each specific user, or other relevant factors that U planners want to include Compare to determine the sort order. Once the subroutine 162 decides which processing room and processing group combination is to be executed next, the subroutine 162 sends specific processing group parameters to the one-room management subroutines 163a-c. To cause the processing group to execute, the subroutine 162 controls many processing tasks in the processing room 30 or in other possible rooms (not shown) according to the processing group determined by the sequence subroutine 30. For example, the room manager The subroutine 163b contains code for controlling the CVD operation in the processing chamber. The subroutine 16 of the room manager simultaneously controls the execution of various subroutines of the chamber components. The control needs to perform the operations of the chamber components of the selected processing group. Examples of chamber component subroutines are substrate positioning subroutine 164, process gas control subroutine 1 65, pressure control subroutine i 66, heater control subroutine 167, and plasma control subroutine. Program 168. Depending on the specific architecture of the CVD chamber, some embodiments include all subprograms, while other embodiments may include some subprograms. Those skilled in the art will know that other room control subprograms may be included, depending on It depends on the processing that is to be performed in the processing room 30. In operation, the room management subroutine 163b selectively sorts or calls the processing component subroutine according to the specific processing to be performed. The room management subroutine 1 63b The sorting performed is performed in a manner similar to that used by the sequence subroutine 162 to sort which processing room and processing group are to be executed next. Typically, the room management subroutine 163b includes the steps of: monitoring various rooms Based on the processing parameters of the processing group to be executed, the software must decide which software needs to be operated, and, in response to the monitoring and decision steps, page 21 This paper applies the Chinese National Standard (CNS) A4 specification (210X297) |) (Please read Note 1 on the back first

-Ordered the printing of the consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs to make the subprograms of room components execute. / The operation of the specific chamber component subroutine in Fig. 1F will be explained by referring to Fig. 1A. Substrate positioning subroutine} Contains control to π pieces < hard code, which is used to load the substrate to the bracket W, and optionally, pick up the substrate to Dang-zhong < want two degrees' to control at Substrate and air jet; member 4〇 ^ 心 间 1 ^. When a substrate is loaded into a process 1:30, the heater assembly 33 is lowered to receive the substrate in the wafer bag 34, and then raised to a desired height. In operation, the substrate positioning subroutine 164 controls the actions of the carriage 32 in response to the parameters of the processing group related to the support height transmitted by the emperor & brake program 1 63b. Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. The processing gas control subroutine 165 has code for controlling the composition and flow rate of the processing gas. Process gas control subroutine 丨 65 Controls the on / off position of the safety valve, and simultaneously raises / lowers the mass flow controller to obtain the desired gas flow rate. The process gas control subroutine 丨 6 5 is evoked by the room management subroutine ^ 6 3 b and all the room component subroutines. Subroutine 165 receives processing parameters from a chamber management subroutine related to the desired gas flow rate. Typically, the process gas control sub-private type 1 65 is operated by opening the gas supply line, and repeatedly buying the required mass flow controller, (ii) comparing the reading with the thought received from the room management sub-program 163b. The flow rate, and (iii) adjust the flow rate of the gas supply line when necessary. Furthermore, the process gas control subroutine 63 includes the steps of monitoring the gas flow rate of an unsafe flow rate, and actuating a safety valve when an unsafe condition is detected. The process gas control subroutine 丨 65 also depends on the selected process (cleaning or deposition or other), and controls the gas composition and flow rate to remove the gas and deposition gas. Other embodiments can be more than one page 22. This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) 5. The invention specification printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs () species-process gas control subroutine Each subroutine controls a specific type of process or a specific group of gas lines. In the second treatment, an inert gas system such as nitrogen or argon flows into the chamber to stabilize the pressure in the chamber before the processing gas is introduced into the chamber. For these processes, the process gas control routine 165 is planned to include steps such as: let inert gas flow into the chamber for a period of time to stabilize the pressure in the chamber, and then perform a later step. In addition, when a process gas system is vaporized from a liquid precursor, such as TlCl4, the process gas control subroutine 165 will be written to include the step of foaming a transfer gas, such as t, through a foaming module. A liquid precursor, or the introduction of a carrier gas, such as &, helium into a liquid is pressed into the system. When a foaming chamber is used for this type of processing, the processing gas control subroutine 165 adjusts the flow rate of the conveying gas, the pressure in the foaming chamber, and the temperature of the foaming krypton to obtain the flow rate for the desired processing gas. As described above, the desired process gas flow rate is transmitted to the process gas control routine as a process parameter. Further, the process gas control subroutine 165 includes steps' to obtain a desired transfer gas flow rate, a pressure of the foaming chamber, and a temperature of the foaming chamber for the desired gas flow rate. A storage table of the values required for the known process gas flow rate. Once the required values are obtained, the pressure and temperature of the foaming chamber are monitored and compared to the desired value and adjusted. The pressure control subroutine 1 66 contains a program code for controlling the pressure in the chamber 30, which is performed by adjusting the size of the throttle valve opening in the chamber exhaust system. The orifice size of the throttle valve is set to control the pressure of the chamber relative to the total processing gas flow, the size of the processing chamber and the exhaust system. Page 23 This paper applies Chinese National Standard (CNS) A4 specifications (210X297) Mm) (Please read the notes on the back first

Order A7 --- B7__ V. Description of the invention () ~ --- The desired level of the pressure of the pumping Han. When the pressure control subroutine i 66 is called I, the desired or target pressure level is received as a parameter from the room management subroutine 163b. The pressure control subroutine 166 measures the pressure in the chamber 30. By reading one or most of the traditional pressure gauges connected to the chamber, the measured value is compared with the target pressure, and the proportional integral derivative (piD) value is obtained. Obtain the PID value from the pressure gauge to adjust the throttle. On the other hand, the pressure control sub-mode 1 6 6 can open or close the throttle valve aperture to a specific opening size to adjust the pressure in the chamber 30 to a desired pressure or pressure range. The heater control routine 167 includes a temperature for controlling the heater coil 33 for resistively heating the bracket 32 (and the substrate thereon). The heater control subroutine is simultaneously evoked by the room manager subroutine and receives a “or set-point temperature parameter. The heater control subroutine measures temperature by measuring the voltage output of the thermocouple located in the bracket 32 Compare the measured temperature with the temperature at the 纟 and 疋 points and increase or decrease the current applied to the heating unit to obtain the set point temperature. The temperature is obtained by measuring the voltage by looking at the relative temperature in the storage conversion table, or by The temperature is calculated by using a fourth-order polynomial. When a built-in ring is used to heat the cradle 32, the heating control subroutine 1 67 gradually controls the rise / fall of the current applied to the ring. In addition, a Built-in fail-safe mode to detect processing safety requirements, and to turn off the operation of the heating unit when the processing chamber 30 is not properly set. Another method for controlling heaters is to use a temperature control deduction method, which is Described in Application No. 08 / 746,657 No. 08 / 746,657 with Jonathan Frank as inventor on December 13th, 996 " System for controlling temperature of vapor deposition equipment In the "Method" case, the case is incorporated here as a reference on page 24. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (please read the precautions on the back 丨 --- item to write this page) ) Order 5U / Un A7 B7 printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (examine the printing of the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economics.-Plasma control subroutine 168 contains code, which is used to set The low and high-frequency RF power levels applied to the processing electrodes in the ， 30 and the low-frequency I used to control the use. As described in the chamber component subroutine two plasma control subroutine 168 is described previously. The room management subroutine 16 complements the aroused criminal's case and includes a remote plasma generator 4. The plasma control subroutine 168 will also be used to control the code of the remote plasma generator. Other details of the above CVD system It is described in U.S. Patent Application No. 08 / 918,708, co-filed on August 22, 1997, and is named as a high temperature, high deposition rate treatment and equipment for depositing titanium layers. It is hereby incorporated by reference. However, the above reactor description is only for the purpose of explanation, other CVD plasma equipments, such as electronic surround resonance (ECR) electrical CVD equipment, inductively coupled RF high-density plasma CVD equipment, etc. can be used. In addition, the above System changes, such as bracket design, heating design, exhaust channel, RF power connection position and other changes are also possible. The method of forming a titanium layer according to the present invention is not limited to any particular CVD equipment. III. A Change in CVD Titanium Process The method of the present invention can be used to deposit a modified titanium film in a substrate processing chamber, such as the example chamber described above. As mentioned above, the rhenium film has several uses in current integrated circuit manufacturing processes. One of the main uses of the titanium film is as an initial adhesion layer in a titanium / titanium nitride stack, which is part of the contact structure. This contact structure is shown in Figure 2A, which is an example. Page 25 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back first)

This page) Printed and printed by the Consumer Cooperatives of the Central Prototype Bureau of the Ministry of Economic Affairs, and a description of the invention (shows a cross-sectional view of a contact structure in which an embodiment of the invention can be used. As shown in Figure 2A, an oxide layer 200 (for example, SiOx thin film) is deposited on a substrate 205 to a thickness of about 100 microns, the substrate has a crystalline silicon or polysilicon surface. The oxide layer 200 can be used as a pre-metallic interposer in an integrated circuit Electrical layer or interlayer dielectric layer. In order to provide electrical contact between the layers, a contact hole 210 is etched through the oxide layer 200 and filled with a metal such as aluminum. In many advanced integrated circuits, contact The hole 21 is very narrow, often narrower than 0.35 micron wide, and has an aspect ratio of about 6: 1 or greater; it is difficult to fill this hole, but some standard processes have been developed, among which The hole 210 is firstly conformally coated with a titanium layer 215. Titanium (but 0 layer & later is coated with a titanium nitride (TiN) layer 22 °. Then-the aluminum layer 225 is often subjected to physical gas Phase deposition and deposition to fill the contact holes ^ and provide electrical connections to Upper layer. The titanium layer 215 provides an adhesive layer for the underlying silicon layer and the oxide layer on the side wall. At the same time, it can be siliconized with a layer of silicon to form an ohmic contact. The TiN layer 22 is well bonded to the Ti layer 215, And the interlayer 225 is well wetted to TiN, so that Ming Ke = fills the contact hole 2 1 0 without forming voids. At the same time, Lu 22 acts as a diffusion barrier layer, which prevents aluminum 225 from migrating into the " In order to properly perform this purpose, the drinking layer 215 must have excellent underlayability, low resistivity, uniform Thai resistivity, and uniform deposition thickness compared to other characteristics. The contact of the entire Japanese circle (middle and / edge) > 〆, ver. Shao. At the same time, (please read the precautions on the back first, then this page) • n · VH ·

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This paper size applies to Chinese National Standard (CNS) A4 specifications (210 × 297 mm) A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (preferably, the titanium layer 215 is evenly along the bottom contacting 21 ° Deposition, but not along the side wall. To prevent the plutonium from being deposited on the side wall, to prevent the so-called "chopping and spreading" phenomenon, in which the cut from the contact area and the side wall react to j and are transferred from the bottom of the contact to the side wall Compared with the titanium deposition process of the prior art, the titanium layer deposited according to the method of the present invention conforms to these persistences and shows considerable improvements in bottom coverage and sheet resistance uniformity. These improvements are achieved by # 主 ″ The material deposition step is completed by adding new particles and unique steps. Some steps "-yes-uniform and unique electropolymerization processing steps, which are performed before the" deposition step. "In this plasma processing step, the wafer system A relatively short period (about 5 to 60 seconds in the preferred embodiment) of ^ and & processing gas slurry. In this method, a small portion of the upper surface of the wafer is used in the deposition step. before It is etched away. The inventor has found that this etching step is particularly useful for removing any oxides (8), (2) from the contact area of the wafer that have been longer than the contact area after the contact hole 21G is formed. 〇 Remove any silicon oxide left in the contact hole 2 丨 0 after the hole formation (etching) step. The right wafer is exposed to the atmosphere for a certain period of time before the contact is formed. The formation of oxides is very common. At the same time, the inventors have also noticed that many commercial processes do not completely etch away the layer 200, but instead leave a thin oxide oxide layer on the contact area. This layer is The layer 230 shown in FIG. 2B may be 100 to 250 Angstroms or more, depending on the process. Depending on the unetched layer 230 or any oxide layer built on the wafer Thickness when “Layer 215 is deposited? This layer can prevent electrical contact to the Chinese paper standard (CNS) A4 specification (210X297 mm) for each paper size on page 27. (Please read the precautions on the back before 1P: this贳) Set 507015 Central Standard of the Ministry of Economic Affairs Employee Consumer Cooperative printed five 'invention description (faults will reduce the whole process ^ hunting to cause some failures, the build oxide layer is reach-thickness,: thickness :: he :: medium' ... cut in the lower layer The electrical contact is at the level of the two resistors, which meets the performance requirements of the manufacturer. Yu Jin: The components can not be used to describe all or parts of the step; in the preprocessing step of the present invention / Γ, ^ < The remaining layer 2 can be improved, and the built-in emulsification system of the substrate 2000 can be described in detail with reference to Fig. 3. Read the touch. Other details of the present invention. Fig. 3 is a flow chart, which, f, II, M is used to deposit the comparison according to the present invention :: Apply: It can be understood that the steps shown in FIG. 3 are only preferred processes. At the same time, other embodiments of the present invention can also be used: ... show the steps or change the form of the steps Or order. As shown in Figure 3, before a layer is deposited, the wafer can be loaded into the chamber 3. (Step S ') and the processor 85 sets the current wafer count (I. for cleaning purposes as described below) to step S305. After the wafer is loaded into the wafer, it is moved to a processing position ', and the bracket 32 is approximately 250 to 500 mils away from the valve head. In a specific and preferred embodiment, the cradle 32 is positioned 329 mils away from the jet 40. During the yen positioning step, the chamber is pressurized with a non-corrosive gas, such as argon θ: above the pressure at which deposition occurs. Argon will fill the voids or spaces in the chamber, especially inside the heating bracket, so that when the chamber pressure is reduced to the deposition pressure (at a specific pressure of 5 Torr), it will outgas. In this way, the step cost is reduced by 30%, which may corrode or oxidize the heater bracket or parts. Wind pressure and air flow through the air jet head 40 (please read the note on the back page first) I —.......- This-page page 28 This paper applies the Chinese National Standard (CNS)厶 姑 1 block (210 × 297 mm • I —----- In ϋ9

III i three | one one I Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 507015 A7 B7 V. Description of the invention () Argon gas flow and argon gas flow under the point of the wafer 36. Preferably, in this step, the chamber pressure system is set to between 5.90 Torr. At the same time, in step 310, the temperature of the bracket is also set to 15 ° C, which is the actual processing temperature. The processing can be performed at any temperature between 400 and 7501, but in certain embodiments, the bracket is preferably The temperature is set between approximately 63 0-7 0 ° C (equivalent to approximately 535 to 635. (: wafer temperature), more preferably approximately 680 ° C (equivalent to wafer temperature of approximately 6051). In a specific embodiment, in step 310, the temperature is initially set to about 690 ° C (10 Ci% at the processing temperature), because when the process gas begins to flow, it will cool the heater and wafer. When the wafer is initially heated at the processing temperature, it results in a shorter wafer cycle time and reduces the thermal shock of the thermal gradient between the heating element and the heating surface of the heater. The thermal shock will increase when the heater power increases. The temperature of the heater is raised at the beginning of the gas flow. About 10 seconds after the start of step 3 10, the temperature is reduced to the actual processing temperature (which is then preferably maintained throughout the deposition process). The reaction gas (preferably the HO flow system is conducted at an initial flow, The upper argon gas flow rate is increased (step 315). The reaction gas is reduced to decompose (subsequently introduced) the energy of the source gas to form the desired film and at the same time reduce the corrosion of the deposition by-products. Hydrogen chloride (HCL) without leaving it as C1 or Ch. The gas flow is then increased by 2 seconds in step 320 and 3 seconds in step 3 2 5. The flow rate of the gas is increased in steps (or Increasing obliquely) In steps 310 to 325, from a start to a final flow rate 'to reduce the thermal shock to the heater. The final flow rate of the gas is quite south and will be improperly cooled if it is turned on once. The step of the gas or-'29th paper; Clit gj national standard (⑽> Μ 胁 (2 like Ergongchu) (Please read the precautions on the back page first) This order ^ 07015 V. Description of the invention () Inclined increase is particularly important for gas systems such as helium or hydrogen, because these gases exhibit high heat transfer characteristics. Plasma pretreatment discussed in the next step 325 m. In the plasma pretreatment step Medium and low frequencies (for example, 300 to 45 KHz Preferably 350KHZ) RF energy is applied to the jet head 40 to form a plasma from & and argon processing gas. As discussed above, after the contact hole 21 is formed, an unetched layer 230 remains in the contact hole. After 210, the electropolymerization system engraved the thin oxide layer on the substrate 200 in whole or in part. Therefore, the improved electrical contact with the substrate 200 was completed. I believe that this etching process can be based on the basic chemical reaction formula: Si. 2 + H2—Si ^ + hO is represented, in which both sintering (siH4) and water (H2〇) are discharged from the chamber. However, 'believe that other intermediate reactions will occur' and that the discharged compounds include those from these intermediate reactions. Ions and other molecules β may also use other gases called pretreatment gases in step 32 to etch away the built-up oxide or the silicon oxide left behind. The pretreatment gas should exhibit a high etch selectivity between silicon oxide and the silicon substrate, so that it can etch oxides or leave oxides without damaging the silicon contact area. Other pre-treatment gases that can be used in step 320 include ammonia (N3) and various halogen species used to etch silicon oxide cores. Fluorine-containing fluorine gas (such as chF3, CF4, QF6 'BF3, NH3, etc.) is considered to be a better type of tooth element, while iodine-containing sources are poor because most iodine sources are solid at room temperature and difficult to use. At the same time, bromine-containing species are better than chlorine-containing species because bromine gas has a lower effect on subsequent deposition treatment. Either pretreatment gas can be mixed with a carrier gas or another inert gas to assist in the stabilization of the plasma and the resulting etching process. Page 30 (Please read the notes on the back first

-Order Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 丄 :) V. Invention Description (Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs

The TiCl4 (source gas backup, JJ, and lice flow rates are started simultaneously in step 325. However, instead of sleeping here, 3 二 2 guards? 1 into these flows into the chamber 30, these flows are dispersed into the pre-pumping pipeline .T ,,,, and in this way shift to these flows, in particular TlCU 'allows the flow to stabilize before the start of the deposition, thus improving various factors in a multi-wafer deposition process (such as a 2000 wafer production line). During the deposition step, the treatment conditions are uniform. Alternatively, the TiCl4 and helium flow rates can be started after the plasma starts as a separate step of 33 °. Among them, preferably, the Ticu flow rate is Stable for at least 6-8 seconds. In the deposition step 335, Tic. And the helium gas flow are re-introduced into the chamber 30 along the argon and hydrogen flow, and the plasma system is continuously applied rf power to the jet head 40, It is maintained. Before mixing the helium carrier gas, Tic "is in liquid form and uses, for example, a gas panel precision liquid injection system (GPUS) liquid injection system manufactured by STEC. As shown in the table! In the example, H2 vs. TiC The ratio is 106: 1. This ratio can be accomplished by those skilled in the art by converting the mgm flow rate of TiCU in the table to its equivalent sccm flow rate. In this example, TiCι4 is used at a rate of 400mg / m. Introduced, it is equivalent to a gas flow rate of 47 to 23 sccm. The deposition step 335 is maintained as long as it is necessary to deposit a selected thickness. Because of the high deposition temperature, increased gas flow rate, and other factors, the titanium film of the present invention is at least A deposition rate of 100 angstroms per minute to about 400 angstroms or more per minute. Therefore, the overall time of step 335 is generally lower than that required for previous technology processes, which increases with the increase in wafer output. Page 31 This paper size applies Chinese National Standard (CNS) A4 (210X297mm) (Please read the precautions on the back first

This page} Order-507015 A7 B7 V. Description of the invention (printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs after the deposition step 335 is completed, the H2, TiCl4 and helium flows are turned off, and the RF power is greatly reduced, and argon is added The flow rate is greatly reduced (steps 3 to 40) to loosen large particles that may have been formed on the chamber during the deposition step. After 3 seconds, the RF power system was turned off and the titanium layer was passivated. The titanium layer was formed by forming a A thin layer of titanium nitride is passivated on the surface of the titanium layer, so that impurities such as oxygen are not absorbed into the titanium. These impurities may change the private resistance value of the titanium layer and form a layer that is not suitable for the deposition of a titanium nitride barrier layer. Surface. Passivation can be accomplished by adding krypton and argon flow into the argon stream to passivate steps 5 and / or forming a nitrogen plasma in step 350. Preferably, steps 345 and 3 50 are performed. 胄 In this way When completed, stabilize the chamber before step 350 of the post-deposition Denso processing step and before the Tic is cleaned from the chamber. Step 3 牦 At the same time, the nitrogen reacts with the titanium surface to start forming a thin layer of titanium nitride. ▲ 于Step 345 胄 'Titanium layer system goes one step further Step 35: Purify by applying RF to the η2 / N2 / Αγ purification gas in the chamber to form -plasma. Passivation plasma can be either formed in a remote plasma source and connected Pass to the chamber. The surface reaction of the ionized nitrogen reduction layer in the passivation plasma is completed, and the formation of a thin layer of titanium nitride is completed in an exposure period of about 10 seconds. In order to form the electrical equipment in the chamber, the RF power is roughly The ground is applied to the jet head 40. The narrow power can be applied to the carrier electrode 22 or to the carrier electrode "and the nipple 40. In a preferred embodiment, steps 345 and 35 are used, and step 345 lasts about 8 In other embodiments, only step ⑷ or only step 350 is used. These steps can be used longer, such as between about 10 to 30 seconds. After step 350, a second plasma wash is performed. Is implemented to further the use of this paper? Iiiii (CNS) view (Please read the precautions on the back first

Book I) Order

2. Description of the invention (Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs: large particles that may appear in the room are washed in step 34 of the electropolymerization, except that 2 355 is similar to step 355. Finally, * step 36. Medium ::: The flow system is maintained and the room system is pumped ^ & The breast flow system is closed, and the second, and then, the wafer system is deducted by Mou 365 (365). Because the wafer has been almost pure (in the air, there will be absorption ... 以 -circle can be exposed to long-term exposure Xia S " Ge η titanium layer. Therefore, even if the characteristics H jade milk, such as exposure After a few days, the layer will not be damaged. Furthermore, the Nitride purification layer provides a "clean," surface, on which a hafnium nitride barrier layer can be deposited. After the wafer is removed Before step 41) and the processor 85 increases the wafer count (step 415), the temperature is set to about 68 generations. In addition to the electric paddle cleaning and cleaning steps 340 and 3 55 performed after each wafer deposition -Dry cleaning process (which is completed without opening the chamber cover) is periodically performed on the chamber, and after a number of wafer deposition processes, the wafer is progressively avoided to prevent dyeing. According to the present invention, in this cleaning process, There is a wafer (for example, a target wafer) in the chamber. The dry cleaning process is generally performed between each "X" wafer, preferably every 2 to 300 wafers. In a specific embodiment Dry cleaning can be performed every 3 to 5 wafers. I want to keep dry cleaning Effective, so that it will not significantly affect the overall system wafer output. The preferred dry cleaning process according to a specific embodiment is explained in more detail below. Referring again to FIG. 3, if the X (for example, χ = 3) wafer has been After being processed (step 370), the chamber is subjected to a dry cleaning. First, the heater is moved away from the jet head by a distance of about 650 mils (step 375), and is guaranteed to be 33rd. The paper size applies the Chinese national standard (CNS) Α4 specification (210 × 297) (Please read this page first)

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* In tn 111 HI A7 B7 Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention () Maintain the processing temperature at 680 ° c. At this time, nitrogen or a similar non-reactive gas system flows into the chamber, and the chamber system is maintained at a cleaning pressure of about 0 to 10 Torr, preferably less than 5 Torr. In certain embodiments, it is 0.6. Thing. This reduces the heat flow from the heater to the air head and therefore cools the air head relative to the heater. Three seconds after step 375, the chlorine gas (Ch) flowed into i at a flow rate of about 25 seem, and the carriage was lifted up to 600 mils from the jet head (step 380). Furthermore, two seconds later, a plasma system collided with about 400 watts of power (step 385). This condition is maintained for a period of time to allow the chlorine species to react with unwanted deposits and etch the deposits from the chamber elements. The unwanted deposition from the deposition process is generally the thickest, the hottest exposed part of the chamber, that is, the part of the upper surface of the heater that is not covered by the wafer, or the part that is not shielded by the flow restriction ring. By moving the heater away from the air jet head, the conditions described above ensure sufficient cleaning of all chamber components without these elements, especially the over-etching of the air jet head. Among these factors, the length of step 390 depends on the amount of deposition established within the chamber 30, which then depends on how many wafers have been processed in the dry clean room, and the length of the deposition process (i.e., deposited on the wafer) Thickness of titanium film on circle 36). In a particular embodiment, step 390 lasts 15 seconds. Alternatively, the length of 'step 390 can be determined using a cleaning point technique. These techniques are conventional and include optical endpoint detection and pressure-based endpoint detection. The optical endpoint detection method requires a quartz or similar translucency to be saved in the wall of the chamber 30 for operation, and is not optimal in some embodiments because this window is sensitive to titanium deposition, and it is compatible with the appropriate end Check _______ 34th _ This paper size applies Chinese National Standard (CNS) A4 (210 X297 mm) '" ~ --- (Please read the precautions on the back before IPr this page}

• Order

507015 V. Explanation of the invention (: Phase 9). Similarly, the known pressure detection method is more ignored. The pressure detection method must be individually adjusted to a value of 3 to 30. And accurately identify the end of the cleaning step 390. Therefore, the inventor of this case has developed a new riding point detection design for the step state, which is based on the amount of reflected M power that has just arrived. The endpoint detection design Measured during the entire cleaning step 390, reflected by the chamber 30 to the power supply for RF power supply 5 (Figure 1A) :::: on: When 'When the sediment is engraved from the chamber wall, the reverse 2 ^ The increase in the reflected power represents the increase in the density of the cleaning plasma, when it incorporates the ion species and energy molecules from the silver engraved deposits. The deposition material comes from the chamber wall, and the reflected power arrives when it is opened. A high school. These observations can be seen in Figure 4, which shows the reflected power as a function of time measured in the cleaning step 390 and the length of the deposition step 335. As shown in Figure 4 Data, Generation-Example, where X = 1, which means room 3〇 After a single wafer is processed, it is subjected to a dry cleaning process. When the reflected power is measured at a falling rate or lower, the cleaning of the chamber is completed. For example, in the '-embodiment, the steps carry the measured reverse power down. After the rate reaches 0 watts / second, stop for 10 seconds. In step 39, in another embodiment, when the measured reflected power drops to less than 2 watts per second, stop. After the plasma cleaning, the chlorine gas The system was shut down and the polycondensation power was turned off (Help 390). The nitrogen flow was maintained for about 3 seconds to clean the chamber. The bracket system then returned to a distance of about 650 mils (step, step 395) and the bottom argon gas system increased.

The current order is based on the table or the step (page 35 of this paper Chinese National Standards (CNS) lying test (10 507015 A7 B7 printed by the Consumers 'Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (/' to clean the room. Finally, the chamber system is evacuated for about 5 seconds (step 400). Of course, it can be learned that " wet cleaning " or preventive maintenance cleaning (which occurs every few hundred to several thousand processing wafers) can be opened by The chamber cover is implemented to manually clean the various components of the chamber. Performing periodic dry cleaning in the wafer deposition room reduces the frequency of these often time-consuming wet preventive maintenance, which is of course considered to increase the efficiency of the deposition process and complete higher Deposition rate "Further, the use of a periodic dry cleaning process improves the weight of the titanium deposition process on the entire wafer production line. 2 That is, compared to a wafer production line that does not have the aforementioned periodic dry cleaning process, For example, on a wafer production line of about 2000 wafers, the characteristics of the deposited titanium layer on the first ten wafers are more similar to the characteristics of the deposited layer on the last large wafer. The liquid TiC remaining in the gas pipeline after the TiCU flow is stopped (step 340) "interferes with the processing repeatability. That is, when the Ticu flow is stopped in step 340 by closing the flow control valve properly connected to the pipeline At the same time, part of the residual TiC "liquid state remains in the pipeline. The inventors found that the amount of these residual liquids varies with each deposition process, and the residual TiC" causes unstable deposition, otherwise it will negatively affect the deposition process. For example, when the amount of residual TiCU changes, 'for any two different substrates, the amount of TiCl4 flowing into the chamber may be different, resulting in more or less deposition on a specific substrate. At the same time, when it is transferred into the chamber, the residual TiCl4 may be Reacts with moisture in the new substrate to form T i 〇2 and cause unwanted particles. Finally, during the wafer deposition step, residual Ticl4 may be exposed into the chamber and coat the part of the chamber or chamber components Therefore, the page size of the coated part is changed. The paper size is applicable to Chinese National Standard (CNS) A4 specification (2i0x297 mm) (Please read the precautions on the back before IPr page}-Order V. Invention (The color of parts is also changed at the same time, or the change of the emission coefficient on the surface of the emission plate of 70 pieces of Shao ', number. In other characteristics. Also the surface < temperature or in order to overcome this residual repair ΤίΓΐ, Ge I TiCU has nothing to do with it. The inventor has a novel and unique step. F π came up with a step to dry the TiCl4 gas pipeline. During the dry cleaning process, prepare $ GAN from crying. An inert gas source (a gas T m that does not react with 4 t of residual TiCl4 and rolled beans) is sludged into the m pipeline. For example, in steps 395, nitrogen at a flow rate of 500 sccm can be introduced into the τ⑹4 pipeline to dry And wash the residual Ticl4 in the pipeline. In this way, the 20,000 method of the present invention ensures that the gas pipeline is in a reshape before depositing each wafer ~ At the same time, after the TlC "pipeline is cleaned, the inflowing helium is sent to / accumulated to 纟In addition, 纟 can help to stabilize and clean the electropolymer. The ammonia flow is through the Ticl4 pipeline by using appropriate valves and flow controllers. These are as known to those skilled in the art. As shown in Figure 3 The gas flow rate 'pressure level and other information according to the presently preferred embodiment of the present invention are disclosed in the following Tables (Deposition Treatment) and Table 2 (Cleaning Treatment). The gases described in Tables 1 and 2 The introduction rate is based on the use of the process shown in Figure 3, in a resistance-heated TixZ CVD chamber manufactured by Applied Materials, which is used for 8-inch wafers. As known to those skilled in the art, it is implemented in other implementations. For example, if other chambers with different designs and / or volumes are used, the actual flow rate of the gas introduced into the chamber will change. Page 37 This paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) {Please read first Notes on the back 丨 tiT Page,-Order printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 507015 A7 B7 V. Description of the invention () Table 1 Preferred CVD titanium process steps 310 steps 315 steps 320 steps 325 steps 335 steps 340 steps 340 steps 345 steps 骡 350 Step 355 Step 360 Pressure; (Torr) 60 TFO 5 5 5 5 1.5 1.5 1.5 TFO TFO interval (mil) 329 329 329 329 329 329 329 329 329 329 329 329 RF power (W) 0 0 0 900 900 900 50 0 600 50 0 Argon (bottom) · (seem) 500 500 500 500 500 500 500 500 500 500 500 0 Argon (top) (seem) 2000 5000 7500 10000 10000 10000 500 500 500 500 0 h2 (seem) 0 1000 3000 5000 5000 5000 0 800 800 800 0 He (seem) 0 0 0 100 (dispersed) 100 (dispersed) 100 0 0 0 0 0 TiCl4 (mgm) 0 0 0 400 (dispersed) 400 (dispersed) 400 0 0 0 0 0 n2 (seem ) 0 0 0 0 0 0 0 800 800 800 0 (Please read the caution on the back page first) * TFO = Throttle valve fully open

Printed on page 38 printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. Paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) 507015 A7 B7 V. Description of the invention () Table 2 Step 375 of the preferred CVD titanium cleaning process 380 | step 385 step 390 step 395 side 400 pressure (torr) TFO 0.8 0.8 0.6 4 TFO interval (mils) 650 600 600 600 650 650 RF power (watts) 0 0 400 0 0 0 argon (bottom) (seem ) 200 200 200 200 500 0 Argon (top) (seem) 0 0 0 0 0 0 h2 (seem) 0 0 0 0 0 0 He (seem) 500 (TiCl4 line 500 (TiCl4 line 500 (TiCl4 line 500 _4 Pipeline) 500 (Dinghui 14 Pipe Le 0 TiCl4 (mgm) 0 0 0 0 0 0 n2 (seem) 500 500 500 500 500 0 Cl2 (seem) 0 250 250 0 0 0 Employee Consumption Printed by the cooperative on page 39. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 507015 A7 B7 V. Description of the invention (although the deposition conditions and flow rates shown in Tables 1 and 2 represent those used in the present invention The current preferred embodiment of the flow rate, but it is known that other deposition conditions and their Flow rate. For example, regarding the rate at which the source and reaction gases are introduced during the deposition phase, the inventors have found that the ratio of Η: to TiCU should be between about 64: 1 and 2034: 1. The preferred ratio depends on the temperature and pressure involved in the deposition. Bracket spacing, RF power level, and other deposition conditions. However, the inventors have found that the above ratios can be used to deposit good quality titanium films under better deposition conditions. The deposition conditions include a heater temperature range of at least Between 630 and 700 ° C, and the deposition pressure range is at least "Torr. In some specific tests, a good quality titanium film is deposited at a ratio of Hz: TiCl4 of 64: ι, using 30Ηsccm! The flow rate and the TiCl4 flow rate of 400 mg / equivalent to 47.23 SCCm), and the H2 / Ticl4 ratio at 2034: 1, with an h2 flow rate of 12000 sccm and a TiCl4 flow rate as low as 50 mg / m. When the flow rate ratio of H2 / TiC is less than 64: 1, the reaction becomes hypoxic and unstable. When the flow rate ratio is greater than 203 4: i, the deposited film begins to exhibit unacceptably poor bottom coverage during contact, Also, it is difficult to manage the exhaust. IV. Test Results and Measurements In order to show the efficacy of the present invention, the experiments were performed with a titanium deposited layer having the advantages of the method of the present invention and without the method of the present invention. The experiments were performed in a resistance-heated Tixz chamber manufactured by Applied Materials. TixZ 罜 is suitable for 200mm wafers and is located in Centura, a multi-chamber substrate processing system also manufactured by Applied Materials. (Please read the note on the back first-printed on this page by the Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 507015 A7 -------------B7 V. Invention Translation () " ~-、 In one of the group experiments, various pretreatment steps (step 325) were performed before the wafer deposition step on the wafer having the oxygen cutting layer deposited thereon. The first step of these pretreatment steps was chlorine (ms —, Nitrogen (500 SCCm) and argon (20 () scem) treatment gas to form a plasma. The plasma was formed using a RF power level of 400 watts and was maintained at 40 to 40 in different tests. Between 100 seconds. The test results show that this step etches the oxide layer at a rate of about Angstroms per second, but the last name is not very uniform and apart from oxygen cutting, it is also uncontrollably and inevitably etched away. Other tests show that the chlorine from the Ch plasma pretreatment step conflicts with the subsequent titanium deposition step. To be clear, I think the residual chlorine is expensive to slow down the deposition rate of the titanium film in step 335. At the same time, it also Decide that the obtained titanium layer is less deposited than the CL plasma pretreatment step The titanium reed is uniform. It is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the caution page on the back). The inventor also tested the plasma pretreatment steps using & according to the preferred embodiment of the present invention. These The test results show that the H2 (12slm) & Ar (550〇SCCm) plasma (rf power 900 watts) uniformly etches silicon oxide at a rate of about 0.8 angstroms per second. At the same time, the etching process is also quite mild, and it has not Shows any signs of damage. Figures 5A and 5B show the uniformity of the last name using this process. Figure 5A shows the thickness of the oxide chip layer deposited on the wafer. Before the plasma pretreatment step, the measurement was performed using a Rudolph focusing ellipsometer, which is known to those skilled in the art. The measurement shows that before the pretreatment step, the oxide layer has a thickness of 132 ± 55 · 61 angstroms. Figure 5B represents the thickness of the oxide layer after the 90-second pre-treatment step. In Figure 5B, the oxide · layer has a thickness of 58 ± 16.7 Angstroms. Page 41 This paper applies Chinese National Standards (CNS) Α4 specification (210 × 297 mm) " '5070 15 A7 B7 V. Description of the invention () Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs can be seen from the comparison of Figures 5A and 5B. In 5B_φ Shiyi, η Y < the thickness of the oxide layer is almost the same as The change shown in Figure 5A. Therefore, it can be seen from the comparison that the etching system in step 325 is very uniform. At the same time, the inventors measured the titanium reed rain deposited according to the present invention, the resistivity, and the similar treatment. The resistivity of the deposited titanium layer, rain— ", plasma pretreatment steps and no standard HF immersion steps, are often used by semiconductor manufacturers to remove oxides before titanium deposition. These test results show that for a 300 Angstrom titanium layer, the rate of the layer that has not been treated with the plasma pretreatment step is between 0.5 and 1.0 Ω higher than those treated with the plasma pretreatment step. These results It is proved that the plasma pretreatment step of the present invention can be successfully used to etch unwanted oxides on a silicon substrate, before depositing a titanium layer. As mentioned earlier, this oxide system is often built on the substrate. Two additional processing steps are required in advance, such as immersion in an HF solvent to transfer the substrate to a separate chamber for deposition of the thin film. Noisy building. This HF immersion step requires the wafer to be subsequently dried and then transferred to the deposition chamber immediately before other oxidation occurs. This process is quite complicated, time consuming and less reliable than the process of the present invention. Other tests have shown that the treatment of the present invention did not deposit any titanium in the vias, such as the sidewall of hole 210 in Figure 2A, and at the same time, formed a coverage rate higher than "nothing. When a 100 angstrom titanium layer was deposited When exposed within the contact, a film having a 300 / () bottom cover on the titanium silicide formed at the bottom of the contact is shown to have 300 angstroms. The parameters listed in the above treatments and experiments should not be limited to those as in the μ patent range Describer. Those who are familiar with this skill can modify the above ground resistance and should touch the rate of 300.

Description of the Invention (The best invention of the invention is the following process, by using chemicals, chamber H and conditions. Due to the cut to the parameters, ^, the above Ai description is illustrative and not restrictive. Φ4 丨 Wang, and, are suitable for deposition on many different deposition and cleaning treatments and titanium films. 钿 上 Θk 理] For example, the dry cleaning treatment can use remote electricity to decompose Γ1 & κ ^ ^ 4 System H2 Gas molecules and / or other gases. Similarly, the remote microwave is used to decompose titanium and other processing gases 2 in the deposition process chamber, and the decomposed ions can be passed to the chamber 30. The present invention can, Different cleaning sources are used, including f2, C1F3, and others. The technique of the present invention = using different sources, such as Qiu (solid state) and other self-contained beverages. Plasma pretreatment step 3 25 can be performed before the deposition step. Use to heat the wafer and stabilize the temperature uniformity of the entire wafer. Other gases, such as the nitrogen or ammonia described above, can be used to passivate the middle layer in steps 345 and 35. Therefore, the scope of the present invention should not be determined by referring to the above. Explain decision It is determined by referring to the scope of the patent application and its equivalent range attached. CLP's technical examples will be determined (please read the precautions on the back 丨 clothing-Hi write this page)

Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs This paper is sized for the Chinese National Standard (CNS) A4 (210X 297 mm)

Claims (1)

507015 Α8 Β8 | y \ 太 C8 D8 u ^ _charge 〒 ... β η (Please read the precautions on the back before filling this page) 1. A chemical vapor deposition process used to deposit a titanium film on a substrate The substrate already has a dielectric layer formed thereon, and the process includes at least steps: (a) placing a substrate in a deposition area; (b) in a first deposition stage, (i) flowing a pretreatment gas to the A deposition area, (ii) forming a plasma from the pretreatment gas in the deposition area, and (iii) maintaining the deposition area in a state that is suitable for maintaining an upper portion of the dielectric layer etched from the substrate; And (c) in a second deposition stage after the first stage, (i) flowing into the deposition zone a process gas containing a titanium source gas and a reactant gas, (ii) forming a plasma from the process gas, and (iii) ) Maintain the deposition area in a state suitable for depositing a titanium layer on the substrate. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 2. The chemical vapor deposition process as described in item 1 of the scope of patent application, wherein the above-mentioned pretreatment gas contains H2 or NH3, and wherein step (b) (iii) is Hold long enough to etch a dielectric layer of at least 10-50 angstroms. 3. The chemical vapor deposition process according to item 2 of the scope of the patent application, wherein the titanium source mentioned above comprises TiCl4. Page 44 This paper size applies to China National Standard (CNS) A4 (210X 297 mm) ABCD 507015 VI. Patent application scope 4 · The chemical vapor deposition process described in item 3 of the patent application scope, where the above-mentioned The electrical layer is selected from the group consisting of undoped silica glass (USG), scale silica glass (PSG), borophosphosilicate glass (BPSG), and fluorosilicate glass (FSG). 5. As the fourth item in the scope of patent application In the chemical vapor deposition process, the substrate is a dream substrate and the above-mentioned dielectric layer has at least one contact opening etched therein, and the titanium layer is deposited to cover the bottom of the contact opening and is formed. A titanium silicide layer is on the bottom. 6. The chemical vapor deposition process according to item 5 of the scope of the patent application, wherein the titanium silicide layer is at least three times thicker than the deposited titanium layer. 7. A chemical vapor deposition process for depositing a titanium thin film on a dielectric layer formed on a flat plate. The process includes at least steps: (a) placing a substrate in a deposition area, (b) In a deposition stage, (i) a pretreatment gas flows into the deposition zone, (ii) in the deposition zone, an electric charge I from the pretreatment gas is formed, and (iii) the deposition zone is maintained in a state that can be adapted to Maintain the plasma for at least 5 seconds to etch away the upper part of the dielectric layer from the substrate; and (c) in the second deposition stage after the first stage, page 45. This paper size applies the Chinese National Standard (CNS) A4 size (210X297mm) ...... 丨 Meals .......- 丨, T ....... (Please read the note on the back first Please fill in this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 507015: B CD 々, patent application scope (i) flow into the deposition zone containing the processing gas and reactant gas containing titanium source gas, (please read first Note on the reverse side of this page) (ii) Plasma is formed from the process gas, and (iii) Keep the deposition area suitable to deposit the titanium layer State on the substrate. 8. The chemical vapor deposition process according to item 7 of the scope of the patent application, wherein the pretreatment gas includes a hydrogen-containing gas, which is selected from the group of H2, NH3 and inert gas. 9. The chemical vapor deposition process as described in item 8 of the scope of patent application, wherein step (b) (iii) above maintains the plasma between 5 and 120 seconds. 10. The chemical vapor deposition process as described in item 8 of the scope of the patent application, wherein step (b) (iii) above maintains the plasma between 5 and 60 seconds. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 1. The chemical vapor deposition process described in item 8 of the scope of patent application, wherein the first deposition stage described above further includes the steps of: starting the flow of the titanium-containing source gas and The flow of the dispersed titanium-containing source gas leaves the deposition area and enters the exhaust pipe of the substrate processing chamber. 1 2 · The chemical vapor deposition process according to item 7. of the scope of the patent application, wherein the above-mentioned titanium-containing source gas includes vaporized TiC 14. P.46 This paper is sized for China National Standard (CNS) A4 (210X297 mm) 507015 as B8 C8 D8 Sixth, the scope of patent application 13. The chemical vapor deposition process as described in item 7 of the scope of patent application, and the above-mentioned reactant gas and the above-mentioned hydrogen-containing source include H /, middle. ^ 2 and middle (please first Read the notes on the back and fill in this page) The flow rate of Η2 mentioned above is maintained from step (b) (1) to step (c) (i ·. 14. Chemical vapor deposition as described in item 7 of the scope of patent application Process i-manufacturing process, wherein the pre-treatment gas mentioned above includes the gas containing functional elements. 1 5. A chemical vapor deposition process for depositing a titanium oxide, which is used to form silicon oxide on a substrate. On the layer, a part of the oxide dream layer is etched away in the contact area, and the process includes at least steps: (a) placing a substrate in a deposition area; (b) in a first deposition stage, (i) flowing into a A pretreatment gas containing Η and an inert gas to the deposition zone, (ii) in the deposition zone, an electric device from the pretreatment gas is formed, and (in) keeping the deposition zone in a state 'the state is charged for 5 seconds To 12. seconds, from the remaining two on the substrate = the upper part of the layer; and the Ministry of Economic Affairs Printed by the Property Cooperative Consumer Cooperative (C) in the second deposition stage after the first stage, d) adding vaporized TiC to the pretreatment gas to form a processing gas flowing into the deposition zone, and (ii) maintaining the deposition It is suitable to maintain the state of electropolymerization formed in step (b) (ii) 'to deposit a titanium layer on the substrate. Page 47 This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 507015 A8 B8 C8 A D8 --------------------------- 6. Scope of patent application 1 6. As the scope of patent application No. 15 The chemical vapor deposition process described above, wherein after the titanium thin film deposition is completed, the substrate is transferred to the second chamber of the multi-chamber substrate processing system under vacuum, and a chemical vapor deposition process is used to deposit titanium nitride on the deposition. 1 7. A chemical vapor deposition process for depositing a titanium layer on a substrate located in a deposition area of a substrate processing chamber. The process includes at least steps: (a) heating the wafer to 5 3 Temperature between 5 and 625 ° C; (b) maintaining the deposition zone at a pressure of 1 to 10 Torr; (c) inflow containing TiC 14 and The processing gas of the reaction gas is introduced into the chamber. The reaction gas and the TiC 14 gas have a reaction: the source flow ratio is between 64: 1 and 20 3 4: 1; and (d) an energy is applied to form the processing gas. Plasma and deposit a thin film on the substrate. (Please read the precautions on the back before filling out this page} f-, vm 1 8 · The chemical vapor deposition process described in item 17 of the scope of patent application, in which the above The reaction gas contains H2. b. Consumer cooperation with the Intellectual Property Bureau of the Ministry of Economic Affairs. Printed by the society. 19. The chemical vapor deposition process described in item 18 of the scope of patent application, wherein the above plasma is made by applying low-frequency RF energy to electrodes placed in the room. form. P. 48 This paper is sized for China National Standard (CNS) A4 (210X 297 mm)