498406 五、發明說明（1) 一― S〜一----------------- 【發明領域】 I 本發明係有關於一種指紋影像擷取裝置及其製作 I法，係運用人體皮膚可導電原理，以及運用易於 i之半導體製程技術的方法製作指紋影像擷取穿 里 !【發明背景】 " ° 近年來，由於電腦科技之技術日新月異，使得用中 :腦控制之相關技術漸漸地被廣泛運用於人類日常生活 ， |而隨著數位資訊科技之突飛猛進，電腦、網路通訊等^並 i及大眾化’未來將個人辨識系統整合於電腦、網於網路曰 :行動電話、身體進出入控制（physical access 、 二，"、汽車、電子商務、信用卡、提款卡及醫療記錄 :專’進订數位簽章已是時勢所趨；眾多辨識技術中目前# i以下列特徵進行辨識，例如：利用生理特徵 ’吊 丨（physiological)者，諸如視網膜（re^ina)、手與手指的 幾何形狀、耳朵、臉型和指紋（fingerprint)等^以^行 |為特徵者如聲音、簽名等。其辨識所使用之方法有光學^ |及利用半導體製程技術製作的壓力式、電阻式、電容 ^ 丨熱感式等。 ： 其中’光學式雖具有高準確性之優點，但必須具備光 :源、透鏡及光感測器，裝置較大且成本高，以及容=受到 :振動之影響；另一方面，壓力式及熱感式於製作時，除標 準積體電路（integrated circuit，1C)外，必須有複雜的 後加工技術才能完成，則將增加製作的困難度及成本，此 外這些利用半導體製程技術所製作之指紋影像擷取裝置， 第5頁 498406 I五、發明說明（2)498406 V. Description of the invention (1) I-S ~ I ----------------- 【Field of invention】 I The present invention relates to a fingerprint image capture device and its production I The method is based on the principle that the human skin can conduct electricity, and the easy-to-use semiconductor process technology is used to make fingerprint image capture. [Background of the Invention] " ° In recent years, due to the rapid development of computer technology, the use of: brain Control-related technologies are gradually being widely used in human daily life, and with the rapid advancement of digital information technology, computers, network communications, etc., and the popularization of the future, personal identification systems will be integrated into computers, networks and networks. : Mobile phones, physical access control (physical access, two, ", cars, e-commerce, credit cards, debit cards, and medical records: special 'signing digital signatures' has become the trend; many identification technologies currently # i identifies with the following characteristics, for example: those who use physiological characteristics such as the retina (re ^ ina), the geometry of hands and fingers, ears, face shape, and fingerprints (fingerpr int), etc. are characterized by ^ line | such as sound, signature, etc. The methods used for identification include optical ^ | and pressure type, resistance type, capacitance ^ 丨 thermal type, etc. which are manufactured using semiconductor process technology.: Among them 'Although the optical type has the advantage of high accuracy, it must have light: source, lens, and light sensor. The device is large and expensive, and the capacity is affected by: vibration. On the other hand, pressure type and thermal In the production, in addition to the standard integrated circuit (1C), complex post-processing technology can be completed, which will increase the difficulty and cost of the production. In addition, these fingerprint image captures made using semiconductor process technology Device, page 5 498406 I. Description of the invention (2)
I 其每一個像素（p i xe 1)的物理訊號都非常微小且雜訊高， 於量測時每一個像素的訊號皆必須放大處理或是運用額外 的電路去除雜訊效應，當所需求之解析度（dp i )增加後， 這些額外的電路將隨之大量的增加，而成本及功率消耗將 I跟著增加。I The physical signal of each pixel (pi xe 1) is very small and the noise is high. During the measurement, the signal of each pixel must be enlarged or processed with additional circuits to remove the noise effect. When the required analysis When the degree (dp i) is increased, these additional circuits will increase substantially, and the cost and power consumption will increase.
I | 有關目前習用之指紋影像擷取裝置的相關技術，主要 !係可分為光學式、壓力式、電容式、電阻式、熱感式，其 i說明分述如下：I | The related technologies of fingerprint image capture devices currently used are mainly divided into optical type, pressure type, capacitive type, resistive type and thermal type. The description of i is as follows:
I ! 1.光學式（Optical):其主要原理為將手指壓於一透 ! |明玻璃上，將光源打在鏡頭上，藉以讀取反射光後從反射 !光的情形推算指紋的形狀，例如：美國專利第6, 115, 483 I號。其主要缺點為：需要有光源、鏡頭及光感測器，並且 唭裝置較大且較為複雜。 2. 壓力式（Pressure):係利用一可彎曲的導電軟板， I將此軟板接至感測晶片的地，當指紋壓於此軟板時造成此 i軟板的變形（軟板會依指紋上的形狀變形），軟板下做一面 |陣列的開關，當此軟板變形與開關上的電極相接觸時，形 I成一迴路，讀取該迴路上的電流在電阻上所形成的壓降， |從電壓值可以推得指紋的圖形。然而其主要缺點為：需要 | 一可彎曲的軟板，而軟板本身則不易依指紋上的形狀而變 形。 3. 電容式（Capacitive):晶片介電保護層下有電極， 當手指壓於介電保護層上時，指紋峰（r i dge )會貼於介電 保護層，造成指紋峰與電極間所形成的電容大於指紋谷 第6頁 498406 …——___________ 五、發明說明（3) Cvalley )與電 換成電壓值。 CMOS製程完成 成的電容跟電 I素下有另外的 4 ·電阻式 陣列，該皮膚 電氣訊號。此 |365667’ 專利 |之專利案所示 如類比數位轉 丨 5·熱感式 層焦電材料， i溫差，藉由溫 丨（Valiey )點， |技術者。其主 上述之五 i電路運作上， i【發明之概述 本發明係 i法’主要係提 I供使用者進行 理，以及利用 /像指貞取裝置 極間所形成 不需額外的彳^電容。再利用訊號處理將其轉 。其主要缺^加工技術，可完全利用標準 路中的雜散·^為：由於指紋峰與電極間所形 電路解決其^ ί不相上下，需要在每一個像 (Resist iVe).政政應’造成功率消耗大。 電阻感應陣6列主要係提供一皮膚電阻感應 技術係如中華轉換—指尖之皮膚電阻成為— 名稱『使用凸=國專利公報之專利公告號： 。主要缺點為ί阻感應器之指紋偵測器』 換器等。 ·而要較複雜訊號處理電路， (Therma1):主 | 當皮膚上的指纹接觸理為·在晶片上鍍上一 差可以辦別指:文ί =焦電材料0寺’會產生 此技術則如美國專(Ridge)及谷 要缺點為：需要# ^ |佝不之 德®田并奸旦/ 灵雜訊號處理電路。 種習用指紋影像擷取之裝 ^ 仍有許多缺點存在，右 工’於貫際 廿隹，有待且必要加 及目的】 A叹导。 有關於一種指紋影像擷取裝置及其 供一電路設計簡單之指紋影像辨識的^ = 辨識之作用。其中運用人體皮膚可導^ ’ 容易大量製作的半導體製程技術製作二= ，能有效地擷取指紋之影像，有別於傳統 498406 I五、發明說明（4) 指紋影像擷取裝置所擷取之類比訊號，仍必須針 號執行放大、消除雜訊效應或利用類比數位轉換 I訊號數位化等等。I! 1. Optical (Optical): The main principle is to press your finger through !! Bright glass, hit the light source on the lens, so as to calculate the shape of the fingerprint from the reflected light after reading the reflected light, For example: US Patent No. 6,115,483 I. Its main disadvantages are: it needs a light source, a lens, and a light sensor, and the device is large and complicated. 2. Pressure: It uses a flexible conductive flexible board. I connect this flexible board to the ground of the sensor chip. When the fingerprint is pressed on this flexible board, the i flexible board will be deformed (the soft board will Deformed according to the shape on the fingerprint), make a side of the array under the soft board | When the soft board deforms and contacts the electrodes on the switch, it forms a loop and reads the current formed by the loop on the resistor Voltage drop, | The fingerprint pattern can be derived from the voltage value. However, its main disadvantage is: a flexible flexible board is needed, and the flexible board itself is not easily deformed according to the shape of the fingerprint. 3. Capacitive: There are electrodes under the dielectric protection layer of the chip. When a finger is pressed on the dielectric protection layer, the fingerprint peak (ridge) will stick to the dielectric protection layer, resulting in the formation of fingerprint peaks and electrodes. The capacitance is larger than the fingerprint valley on page 6 498406… ——_____________ V. Description of the invention (3) Cvalley) and electricity are replaced with voltage values. The CMOS process is completed. There are additional 4 · resistive arrays under the capacitor and electrical components, which are electrical signals for the skin. This | 365667 ’patent | patent case is shown as an analog digital transfer. 5 · Thermal layer pyroelectric material, i temperature difference, through the temperature (Valiey) point, | Technologist. In terms of the operation of the above-mentioned five circuits, the [invention of the invention is the "method of the invention", which mainly provides I for the user to handle, and the use of / between the fingers of the chase device is formed without additional capacitors. . Then use signal processing to transfer it. Its main lack of processing technology can fully utilize the stray in the standard road. It is: Because the circuit formed between the fingerprint peak and the electrode is equivalent, it needs to be in every image (Resist iVe). 'Causes high power consumption. The 6-resistance sensor array is mainly used to provide a skin resistance sensing technology, such as the Chinese conversion-the skin resistance of the fingertips becomes-the name "Using Convex = National Patent Gazette Patent Bulletin Number:. The main disadvantage is the fingerprint sensor of the resistance sensor. · For a more complex signal processing circuit, (Therma1): Main | When the fingerprint contact on the skin is reasonable, you can do a poor plating on the wafer. Such as the United States (Ridge) and Valley to the disadvantages: # ^ | 佝 不 德德 ® Tian Bing Dan Dan / Ling Mi signal processing circuit. There are still many shortcomings in this conventional fingerprint image capture device. Right-hand work is in Guanji, waiting and necessary for the purpose] A sigh. Regarding a fingerprint image capturing device and a fingerprint image recognition device with a simple circuit design, ^ = recognition function. Among them, the use of human skin guidance ^ 'easy to mass-produce semiconductor manufacturing technology to produce 2 =, can effectively capture fingerprint images, different from the traditional 498406 I. 5. Description of the invention (4) fingerprint image capture device For analog signals, it is still necessary to perform pin amplification, eliminate noise effects, or digitize I signals using analog digital conversion.
I 丨 本發明之目的係提供一指紋影像擷取裝置及 j i法。每一個像素所擷取的訊號只有高準位（表示4 !低準位（表示指紋谷）的數位訊號，沒有類比的小 |需在每一個像素下另外加上放大器或比較器作訊 i每一個像素下只有一個電晶體作為開關，能縮小 |積以增加電極的數目，使影像的解析度提高，並 I減少功率消耗及降低製作成本。 為達成上述目的，本發明所述之指紋影像擷 |係包含一面陣列感測元件及訊號讀取電路，其中 |電路為控制選取面陣列感測元件中的每一像素， 素中包含有一突塊電極，係為一雙電極，其一電 電極，乃係與一電晶體之源極端相接；另一電極 極，係為面陣列感測元件與半導體基材相連。其 的間距（pitch)遠較指紋峰（ridge )及指紋谷（v a |度小2至1 5倍，當手指壓於指紋影像擷取裝置之^ 面時，只有指紋峰處的皮膚才會接觸到突塊電極 膚作為導電體使每像素下的電晶體源極接地，造 :路，經由面陣列感測元件以及訊號讀取電路之簡 邏輯電路將指紋峰及指紋谷的訊號數位化，並且 像素之高低準位訊號，即可獲取指紋之圖形。 本發明所述之指紋影像擷取裝置之製作方法 第8頁 對類比訊 器將類比 其製作方 i紋峰）及 訊號，無 號處理。 電極的面 能大量的 取裝置中 訊號讀取 而每一像 極為源極 為接地電 每一像素 1 ey)的寬 ^片的表 ’利用皮 成一迴 單的數位 讀取每一 ，主要係 498406 I五、發明說明（5) 製作一面陣列感測元件以及一訊號讀取電路而加以連結， 其中每一面陣列感測元件之單一像素以及訊號讀取電路中 之電晶體係以一互補式金氧半導體（CMOS)所製作組成。其 j j中單一像素之製作方法係包括：形成一互補式金氧半導體 I (CMOS)中之p型金氧半導體（pMOS)以及η型金氧半導體 i (nMOS)元件；於η型金氧半導體之源極端上形成一插銷 | ( ρ 1 ug);沈積一上金屬層於插銷上以作為一源極電極；再 I以上金屬層圖樣製版為環繞於該源極電極周圍，藉以形成 |接地電極；以製作半導體插銷之技術將接地電極與基材相 |連接；沈積導電層於上金屬層之上方以形成突塊電極；完 成單一像素。 有關本發明之詳細内容及技術，茲就配合圖式說明如 【發明之詳細說明】 本發明係提供一種指紋影像擷取裝置及其製作方法， :主要係以人體皮膚可導電原理，以及利用容易大量製作的 i半導體製程技術製作一指紋影像擷取裝置。為了進一步清 :楚說明本發明之詳細内容，分別以指紋影像擷取裝置及原 理，以及指紋影像擷取裝置之製作方法兩部份說明如下： ;指紋影像擷取裝置及原理 ! 有關本發明所提出之指紋影像擷取裝置，煩請配合參 i閱第1圖，第1圖所係為本發明之指紋影像擷取裝置之電路 :連接圖。其中，利用容易大量製作的半導體製程技術加以 :製作出指紋影像擷取裝置，此裝置中包含有一面陣列感測 第9頁 498406 I五、發明說明（6) — - | -----.. U及一訊號讀取電路12，其中面 々由複數個單一像素15之陣列所組成，=;:上。，儀 號，並以數位却缺士 4T . A 、〗出♦日紋訊 ^ ^ σ 式輸出’而訊號讀取電路12，則係士 二接於：陣列感測元件i。中之每一像素15之間，以二：相 I取母一像素之操作。例如，用控制 控制選 1每一列訊h Μ ^ 用以控制面陣列感測元件10 之開或關，以及可讀取每一行之訊號 ： !所測得之高低準位即可獲取指紋之影像 必外，第1圖中所揭示之訊號讀取電路丨2主 ;有一訊號輸出電路20,連接於面陣列感測元件^係^^ 數個控制電晶體22及反相器24所連結組成，用以將面负 ^測=件10之每-像素15所感應之指紋訊號加以數位= 出:/、中訊號輸出電路20之連接方式，係為相對應連ς = 面陣列感測元件1 〇中之每一行輸出，而藉由個別連接杵制 電晶體22以及反相器24所組成。於訊號輸出電路 ;端係連接有一閃鎖電路（Latch)3〇,用以執行訊號資^出 :鎖之用，而閂鎖電路3〇之輸出端則連接至一行解碼器 (C/Olumn Decoder) 40，係執行控制面陣列感測元件1〇中 一行之訊號依序加以讀出者。此外，於面陣列感測元件^ 之側連接有一列解碼器（R 〇 w D e c 〇 d e r ) 5 0，乃係用以押 制每一列之像素1 5中的電晶體5 5依序打開。 工 如第1圖所示，面陣列感測元件丨〇中每一列上之像素 1 5，其電晶體5 5之閘極端係以一金屬層相連至訊號讀取帝 路1 2中之列解碼器5 0。以及面陣列感測元件丨〇中每一行: 之像素1 5，其電晶體5 5之汲極端係以一金屬層而相連接至 第10頁 498406 丨五、發明說明（7) ^ i訊號輸出電路20中之反相器24者。 \ 另一方面，於面陣列感測元件10中每一單一像素15係 i藉由一個電晶體5 5及突塊電極5 6所構成，而突塊電極5 6則 |是藉由源極電極150及接地電極16〇所構成，此點，煩請配 i合參閱第2圖，主要為說明單一像素15之結構示意圖。首 |先概略配合說明其製作方法，其製作方法為面陣列感測元 |件10中之每一像素15係利用積體電路之亙補式金氧半導體 丨（CMOS)製程製作場效電晶體（field effect transistor， ;FET)陣列。以第2圖所示為例為一 CMOS中之n型金氧半電晶 體（nMOS)而其基材（subst rate)為p型者作一說明；此外， :本發明之電晶體亦可為一 p型通道電晶體，而其基材為讀 i者。 其中/於每一像素15結構中之一基材170 (為一 p型基 材）上，係有汲極端D及源極端s以及一閘極i 7 2。於美材& 17 0上方為一氧化層174，在氧化層174中，、土 :延伸有一插銷175 (plug)。此插銷175則連接至—上金屬層 178’用以形成源極電極15〇者。此外，以上金屬層 樣製版環繞於源極電極1 5 〇之周圍結構係形忐 曰 以作為單一像素15之接地電極16〇者，並再藉由姑’ 將接地電極1 6 〇連接至基材1 7 0中。於氧化層1 4上係 保護層1 8 0，而於上金屬層上1 7 8則沈積有—邕七„係有 以形成突塊電極5 6者，即為源極電極1 5 〇盥 曰 ’、 细忐 廿丄… ”银地電極1 6 0之 組成。其中突塊電極5 6之上方於實際結構上， ^ 4-ώ U b 4. 彳糸個別為一 大塊狀者，並且為一導電性之材料如：金、 銀、鎳、鎳鐵 第11頁 498406 I五、發明說明（8) ^ 一 合金、ΙΤ0等等。如上述，形成為單—像素15之結構示意 圖。 其中源極端S (source)上方的介電保護層18〇去除 後，係再以鍍膜的方法將導電材料沉積於電極1 5 〇、丨6 〇 i上’直至其高度較介電保護層18 0高，形成偵測指紋的陣 i列電極。於陣列中，源極電極15〇主要係為指紋感測用之 |電極，接地電極為使皮膚表面與基材17〇同電位之作用， i其每一像素的間距尺寸（pitch size)較指紋峰1〇1及指紋 |合1 0 2小2〜1 5倍，此點，煩請進^一步參閱第3圖。 丨 第3圖所示係為本發明指紋影像擷取裝置中，指紋訊 i號擷取之路線示意圖，用以進一步說明本發明所運用之原 理。其中指紋之側視放大示意圖為標號1〇〇之指紋波圖， :可分為指紋峰101及指紋谷102。當人體的手指壓於陣列中 丨之突塊電極5 6上時，只有指紋峰1〇丨處的皮膚才會與源極 電極1 5 0及接地電極1 6 0接觸，其接觸點標號為〇，係變成 |零電位。如第3圖中的指紋訊號擷取線路示意圖所示，當 :母一像素電曰曰體（Μ 1 ) 5 5其閘極（g a t e )為高準位時，此訊 :號會經由電晶體5 5傳送至訊號輸出電路2〇中之反相器24, ;進而輸出一高準位的訊號；另一方面，指紋谷1〇 2的皮膚 旧沒有與突塊電極56接觸，視為浮接（fl〇ating)，而反相 i器24平時之輸入端為拉昇之高準位（1)1111 high，係由控制 i電晶體Mp 22所加以控制），所以電晶體（M2、M3) 55之輸 出端為低準位。 將上述的原理進一步擴展成線陣列（1 i n e a r r a y )，如 第12頁 五、發明說明（9) 第4圖之所示 為 線陣列訊號之擷- k差異在於將單一像素15之數量^^取不意圖，其與第3圖 ί控制電晶體22及反相器24的數目择f，號輪出電路20中之 μ元件。#更進-步地將線陣歹^=，形成—線陣列電 i極，則成為如第1圖所揭示之面陣為二_維矩陣之陣列電 本發明所述之指紋影像擷取筆署1^170件1〇。 I與實驗，其模擬煩請配合參閱第;^置亦^已經過實際之模擬 丨-像素之等效電路，電晶體以為么，二7要係揭示每 ;極電極（當Mf開啟時表示指紋峰 =Η峰是否接觸到源 丨晶體Mr為控制母一列每一像辛的卩卩μ . ! 1豕系的開關，控制電晶體Μρ 22 丨為控制反相器24輸入端之拉升高準位（puU high)，皮膚 上的電阻則以1 0 Μ取代，考慮當解析度增加時每一列的電 :阻電容RC效應’以一列6〇〇像素（pixel)模擬以及實驗， 其中電源power為3·3ν。其模擬實驗結果中xcong高準位 日守（表示‘紋峰接觸到源極電極），每一個像素（pixel)之 i輸出（vo 1、vo2、vo3.........)為高準位。當xcon為低準位 丨時（表示指紋峰沒有接觸到電極），每一個像素（pixel)的 丨輸出（vol、v〇2、v〇3.........)為低準位，結果顯示利用 i CMOS訊號讀電路讀取皮膚與陣列電極的接觸與否產生的訊 |號餐動疋可彳亍的’即本發明是可行的。 丨 第6圖所示係為本發明指紋影像擷取裝置中，複數個 ;像素結構配合指紋訊號擷取之剖面示意圖。其中指紋峰 101接觸左側兩個像素，輸出為高準位；指紋谷1〇2則無接 觸右側兩個像素，輸出為低準位，所以訊號為1 1 0 0 (1 :高 第13頁 498406 I五、發明說明（ίο) —---------------------—------- j I準位；0:低準位）。 外而：貫際產品之運用上，本發明之指紋影像擷取 嘬置中⑽面陣列感測元件10之像素大小為介於1〇// mx 1〇 丨^ I n二二X 10 0// m之間的產品者；以及該面陣列感測 70 度可為介於30 〇dPi至120 Odpi之間的產品 者。 丨指紋影像擷取裝置之製作方法 關本發明之指紋影像擷取裝置之製作方法，主要係 tit \一制面J5車列感測元件（如前述裝置之面陣列感測元件 u 2 4 —訊號讀取電路（如前述裝置之訊號讀取電路 γI相互連接而完成。其方法中，面陣列感測元件 ^ 、ϋ製程方法係利用積體電路之互補式金氧半導 J (匕0S)之‘程而製作成電晶體之陣列，再於該每一電晶 ΐi端/、方„延伸形成一突塊電極(如前述裝置之突塊 二:卩凡成單一像素’之後以陣列方式形成面陣列感 測兀件，用以感測指紋影像。 .^ ^步之製程說确，煩請配合參閱第7圖，第7圖所 ==本發明之指紋影像擁單一像*㈤製作方法 =程圖丄其中，本發明之實施例係以一 p —Ope的基材作說 百，於一基材上定義電晶體主動區200;接者於主 =:=形成一阱（111611)區域2〇2。其作法為：一開始必 須先疋義出nMOS與pMOS電晶體工作區域，主要係先對 P-type，材做適當的摻雜，然後在整個表面長一層氧化 用第一個蝕刻光罩決定N井（n_wel㈠的區域，作法是 498406 五、發明說明（11) 通過氧化層的窗口中植入磷原子，一旦N井區域產生了， 則nMOS與pMOS電晶體工作區域便已決定。 接著於基材上長上一層相當厚的場氧化層（field ox i de ) 2 0 4，以及沈積多晶矽以形成閘極2 〇 6。其作法為先 對場氧化層做選擇性蝕刻使矽表面露出來，而將會在此區 f製作nMOS電晶體，接著再對整個表面長一層薄的、高品 質的氧化層’作為以後nM〇s的閘極氧化層（gate 〇xide)， ，，在此薄氧化層上再長一層多晶矽（polysilic〇n)，此 =晶矽可用來作為nMOS電晶體之閘極的電極材料，亦可用 為積體電路間的連接煤介，然後對多晶 接線和問…外，沒有被多晶= 刻掉’…晶片的表面被顯露來用以 式捭雜古、的源極與汲極，利用擴散或離子植入的方 晶：♦ : : Ϊ的n~tyPe雜質，摻雜的雜質會穿透裸露的石夕 形 type的基材產生兩個n-type的區域，葬以 …雜質也會穿透多晶二二 圖樣且係數…多晶石夕間極在摻雜之前就已經 及極的：置決定通道區域的位置，蝴源極及 凡成上述的步驟，則一 nMOS便形成。另一太 製作Γ、Γ的製作與nM〇S為同時進行，其製作方法如nMOS之 雜古、曲’，兩者主要差異之處是在pMOS的源極與汲極為摻 巧/辰度的p-type雜質。 電曰ί製=陣列感測元件之單一像素中，除了製作_S 曰曰肢凡件外，則nMOS電晶體本身係再利用半導體插銷 第15頁 498406 五、發明說明（l2) ———— (p 1 ug)技術使其電晶體的源極端接於上 ， |電極）。是於源極端上形成插銷2 1 〇，再金屬層（作為源極 |屬層以作為源極電極212。另一電極（接銷上沈積上金 i金屬層圖樣製版環繞於源極電極214， ^兒極）’則以上 插銷技術將此一電極與基材相連（即 2 j，利用半導體 使其與基材同電位。最後，再利用蝕刻'方式$將電極)216， !介電保護層蝕刻掉，此時上層金屬層電極言屮水上方的 !鍍膜的方法將導電材料沉積於電極上以形 1々二’利用 |218 (上層金屬作為籽晶層（seeding 電極 |即為包含該源極電極與接地電極者），進 大塊電極 | 2 2 0之製作。 凡风早一像素 | 上述面陣列感測元件中每一像素係以氧化層做為々 |層隔開，每一列像素的閘極以金屬相連至訊號讀取路 丨之列解碼器（row Dec〇der)50，每一行像素的汲極相連至 訊號讀取電路丨2之訊號輸出電路20的反相器24再利用行解 3 = Decoder)40控制其依序讀取。此外’前ί之 ，兒材料係如金、銀、鎳、鎳鐵合金、I TO等所製作者。 丨【發明之效果】I 丨 The purpose of the present invention is to provide a fingerprint image capturing device and a j i method. The signal captured by each pixel is only a digital signal with a high level (indicating 4! Low level (indicating the fingerprint valley). There is no analogy. It is necessary to add an amplifier or comparator for each pixel. There is only one transistor under a pixel as a switch, which can reduce the product to increase the number of electrodes, improve the resolution of the image, and reduce power consumption and production costs. In order to achieve the above purpose, the fingerprint image capture of the present invention | It includes an area array sensing element and a signal reading circuit, where the circuit is to control and select each pixel in the area array sensing element. The element contains a bump electrode, which is a double electrode and an electrical electrode. It is connected to the source extreme of an transistor; the other electrode is connected to a semiconductor substrate as a surface array sensing element. Its pitch is far greater than the fingerprint peak and the fingerprint valley. 2 to 15 times smaller. When a finger is pressed on the ^ face of the fingerprint image capture device, only the skin at the peak of the fingerprint will contact the bump electrode skin as a conductor to ground the source of the transistor under each pixel.: Road, the fingerprint peak and fingerprint valley signals are digitized by the simple logic circuit of the surface array sensing element and the signal reading circuit, and the high and low level signals of the pixels can obtain the fingerprint pattern. The fingerprint according to the present invention How to make an image capture device on page 8 The analog sensor will be analogous to its producer (i-peak), and the signal will be processed without numbers. The surface of the electrode can be read in large quantities from the device and each image is grounded. Each pixel (1 ey) of a wide sheet of sheet 'reads each digitally in a single sheet, mainly based on 498406 I. 5. Description of the invention (5) Making a side-array sensing element and a signal reading circuit To be connected, a single pixel of each surface array sensing element and a transistor system in the signal reading circuit are made of a complementary metal-oxide-semiconductor (CMOS). The manufacturing method of a single pixel in the jj includes forming a p-type metal-oxide-semiconductor (pMOS) and an n-type metal-oxide-semiconductor i (nMOS) element in a complementary metal-oxide semiconductor I (CMOS); A source pin is formed at the source extreme | (ρ 1 ug); an upper metal layer is deposited on the pin as a source electrode; and a metal layer pattern is plated around the source electrode to form a ground electrode Connect the ground electrode with the substrate with the technology of making semiconductor plugs; deposit a conductive layer over the upper metal layer to form a bump electrode; complete a single pixel. Regarding the detailed content and technology of the present invention, the drawings are described with reference to the detailed description of the invention, such as [detailed description of the invention] The present invention provides a fingerprint image capture device and a manufacturing method thereof: mainly based on the principle that the human skin can conduct electricity, and it is easy to use A mass-produced i semiconductor process technology produces a fingerprint image capture device. In order to further clarify: to explain the details of the present invention, the two parts of the fingerprint image capture device and principle and the method of making the fingerprint image capture device are described as follows:; fingerprint image capture device and principle! Please refer to Figure 1 for the proposed fingerprint image capture device. Figure 1 is the circuit of the fingerprint image capture device of the present invention: connection diagram. Among them, the semiconductor process technology that is easy to mass-produce is used to create: a fingerprint image capture device, which includes a surface array sensing page 9 498406 I V. Description of the invention (6) —-| -----. U and a signal reading circuit 12, wherein the surface area is composed of an array of a plurality of single pixels 15, = ;: on. , The instrument number, and the lack of digital 4T. A,〗 ♦ Japanese pattern ^ ^ σ σ output ’and the signal reading circuit 12 is connected to the array sensing element i. Between each of the pixels 15, there is a two-phase operation of taking the mother and one pixel. For example, use control control to select 1 each column h MH ^ to control the area array sensing element 10 on or off, and can read the signal of each line:! The measured high and low level can obtain the fingerprint image In addition, the signal reading circuit disclosed in Fig. 1 has 2 main units; a signal output circuit 20 is connected to the area array sensing element ^ system ^^ a plurality of control transistors 22 and an inverter 24 are connected, It is used to digitally detect the fingerprint signal of each pixel-pixel 15 of the component 10 = out: /, the connection mode of the medium signal output circuit 20 is a corresponding connection. = Area array sensing element 1 〇 Each of the lines is output, and is composed of individually connected transistor 22 and inverter 24. To the signal output circuit; the terminal is connected with a latch circuit (Latch) 30, which is used to perform signal output: lock, and the output of the latch circuit 30 is connected to a row of decoders (C / Olumn Decoder ) 40, the signals of a row in the control plane array sensing element 10 are sequentially read out. In addition, a row of decoders (R o w De c d de r) 50 is connected to the side of the area array sensing element ^, which is used to sequentially turn on the transistors 55 in the pixels 15 of each row. As shown in Figure 1, the pixel 15 on each column of the area array sensing element, the gate terminal of the transistor 5 5 is connected to the signal by a metal layer to read the column in Dilu 12器 50 0。 5 0. And each row in the area array sensing element: the pixel 1 5 and the drain terminal of the transistor 5 5 are connected to a metal layer to page 10 498406 Ⅴ. Description of the invention (7) ^ i signal output The inverter 24 in the circuit 20. \ On the other hand, each single pixel 15 in the area array sensing element 10 is composed of a transistor 5 5 and a bump electrode 56, and the bump electrode 5 6 is a source electrode. 150 and the ground electrode 160. At this point, please refer to FIG. 2 for the explanation of the structure of a single pixel 15. Firstly, first explain the manufacturing method with a rough outline. The manufacturing method is a surface array sensing element. Each pixel in the component 10 is a field-effect transistor manufactured using integrated circuit CMOS (CMOS) process. (Field effect transistor, FET) array. Take the example shown in Figure 2 as an example for an n-type metal-oxide-semiconductor (nMOS) in CMOS and its substrate (subst rate) is p-type; in addition, the transistor of the present invention can also be A p-type channel transistor whose substrate is i-reader. Among them, on a substrate 170 (which is a p-type substrate) in each pixel 15 structure, there are a drain terminal D and a source terminal s and a gate i 7 2. Above the US material & 170 is an oxide layer 174. In the oxide layer 174, a plug 175 extends. This pin 175 is connected to the upper metal layer 178 'for forming the source electrode 15o. In addition, the above metal layer-like plate-making pattern surrounds the surrounding structure of the source electrode 150, which is referred to as the ground electrode 16 of a single pixel 15, and then the ground electrode 16 is connected to the substrate through the ' 1 7 0. A protective layer 180 is deposited on the oxide layer 14 and 1 78 is deposited on the upper metal layer—the ones that are formed to form the bump electrodes 56 are the source electrodes 150. ', Fine ...' Composition of the silver ground electrode 160. Above the bump electrode 5 6 is on the actual structure, ^ 4- FREE U b 4. 彳 糸 Individual is a large block, and is a conductive material such as: gold, silver, nickel, nickel-iron Page 498406 I. Description of the invention (8) ^ An alloy, ITO and so on. As described above, the structure of the single-pixel 15 is illustrated. Wherein, after the dielectric protection layer 180 above the source terminal S (source) is removed, a conductive material is further deposited on the electrodes 150 and 600 by a coating method until the height is higher than that of the dielectric protection layer 180. High, forming an array of electrodes for detecting fingerprints. In the array, the source electrode 15 is mainly used for fingerprint sensing. The ground electrode is used to make the skin surface and the substrate 17 have the same potential. The pitch size of each pixel is larger than the fingerprint. Peak 1〇1 and fingerprint | he 1 0 2 is 2 to 15 times smaller. At this point, please take a closer look at Figure 3.丨 Fig. 3 is a schematic diagram of a route for capturing the fingerprint signal i in the fingerprint image capturing device of the present invention to further explain the principle used by the present invention. The enlarged schematic view of the side view of the fingerprint is the fingerprint wave pattern number 100, which can be divided into fingerprint peak 101 and fingerprint valley 102. When the human finger is pressed on the bump electrode 56 in the array, only the skin at the fingerprint peak 10 will contact the source electrode 150 and the ground electrode 160, and the contact point is labeled as 〇. , The system becomes | zero potential. As shown in the schematic diagram of the fingerprint signal acquisition circuit in Figure 3, when the mother-pixel electrical signal body (M 1) 5 5 and its gate (gate) are at a high level, this signal: the signal will pass through the transistor 5 5 is transmitted to the inverter 24 in the signal output circuit 20; and then outputs a high-level signal; on the other hand, the skin of the fingerprint valley 102 is not in contact with the bump electrode 56 and is considered to be floating (Fl〇ating), and the normal input terminal of the inverter i is the high level of the pull-up (1) 1111 high, which is controlled by the control i transistor Mp 22), so the transistors (M2, M3) The output of 55 is a low level. The above principle is further extended into a line array (1 inearray), as shown on page 12 (5) Description of the invention (9) Figure 4 shows the capture of the line array signal-the difference is that the number of single pixels 15 ^^ It is not intended, and the number of the control transistor 22 and the inverter 24 in FIG. 3 is selected to be f, and the μ element in the circuit 20 is output. # 更 进 —Stepwise convert the line array 歹 == to form—the line array electric poles become the array of the two-dimensional matrix with the area array as disclosed in FIG. 1. The fingerprint image capturing pen according to the present invention 1 ^ 170 pieces 10. I and the experiment, please refer to the simulation of its simulation; ^ Set also ^ has been the actual simulation 丨-pixel equivalent circuit, what does the transistor think, 2 7 should be revealed each; electrode (when Mf is on, it means the fingerprint peak = Whether the peak is in contact with the source 丨 Crystal Mr is used to control the 像 μ of each image in the column of the mother.! 1 豕 switch to control the transistor Mρ 22 丨 to control the pull-up level of the input terminal of the inverter 24 (PuU high), the resistance on the skin is replaced by 10 megawatts. When the resolution is increased, the electric resistance of each column: the resistance and capacitance RC effect are simulated and tested with a row of 600 pixels, where the power source is 3 · 3ν. In the simulation results of xcong high-level day guard (indicating that the ripple peak is in contact with the source electrode), the i output of each pixel (vo 1, vo2, vo3 ...) .) Is high level. When xcon is low level (indicating that the fingerprint peak does not touch the electrode), the output (vol, v〇2, v〇3 ...) of each pixel (pixel) ...) is a low level, the results show that using i CMOS signal reading circuit to read the signal generated by the contact between the skin and the array electrode | '' Is the invention is feasible. 丨 Figure 6 is a cross-sectional view of the fingerprint image capture device of the present invention; the pixel structure cooperates with the fingerprint signal capture. The fingerprint peak 101 touches the two pixels on the left , The output is a high level; the fingerprint valley 102 has no contact with the two pixels on the right side, and the output is a low level, so the signal is 1 1 0 0 (1: high page 13 498406 I. Description of the invention (ίο) — ------------------------------ j I level; 0: low level). Outside: the use of consistent products The pixel size of the fingerprint image capturing center surface array sensor 10 of the present invention is a product between 10 // mx 1〇 丨 ^ I n 22 × 10 0 // m; and The area array sensing 70 degrees can be a product between 30 dPi and 120 Odpi. 丨 Manufacturing method of fingerprint image capture device The manufacturing method of the fingerprint image capture device of the present invention is mainly tit \ a The surface-forming J5 car train sensing element (such as the surface array sensing element u 2 4 of the aforementioned device) —a signal reading circuit (such as the signal reading circuit γI of the aforementioned device) is connected to each other to complete. In the method, the area array sensing element ^ and the manufacturing method are made of an array of transistors by using the complementary metal oxide semiconductor J (dagger 0S) process of the integrated circuit, and then at each end of the transistor / 、 Fang „Extended to form a bump electrode (such as the bump 2 of the aforementioned device: 卩 Fan into a single pixel ') and then form a surface array sensing element in an array to sense the fingerprint image. To be sure, please refer to FIG. 7 for the cooperation. == The fingerprint image of the present invention has a single image * ㈤ manufacturing method = Cheng Tu 丄 Among which, the embodiment of the present invention is based on a p-Ope substrate One hundred, the transistor active area 200 is defined on a substrate; then connected to the main =: = to form a well (111611) area 202. The method is as follows: the working area of nMOS and pMOS transistors must be defined at the beginning, mainly by first doping the P-type material, and then oxidizing the entire surface with the first etching mask to determine N. (N_wel㈠ region, the method is 498406 V. Description of the invention (11) Phosphorus atoms are implanted through the window of the oxide layer. Once the N-well region is generated, the nMOS and pMOS transistor working regions have been determined. Then on the substrate A relatively thick field oxide layer (field oxide layer) 2 0 4 is deposited thereon, and polycrystalline silicon is deposited to form the gate electrode 206. The method is to first selectively etch the field oxide layer to expose the silicon surface, and An nMOS transistor will be fabricated in this area f, and then a thin, high-quality oxide layer 'is grown on the entire surface as the gate oxide layer of the next nM0s. Here, the thin oxide layer A layer of polysilicon is grown on the top. This = crystalline silicon can be used as the electrode material of the gate of nMOS transistors. It can also be used as a connection between the integrated circuit and the coal medium. Not polycrystalline = engraved '... The surface of the film is exposed to mix the ancient, source, and drain electrodes, and use the diffusion or ion implanted cubic crystal: ♦:: n ~ tyPe impurities of Ϊ, doped impurities will penetrate the exposed stone The substrate of the U-shaped type generates two n-type regions, and the impurities will penetrate the polycrystalline two-two pattern and the coefficients. The location of the region, the source of the butterfly, and the above steps will form an nMOS. Another production of Γ, Γ and nMOS is performed at the same time, and its production methods are as follows: The main difference is that the source and drain of pMOS are doped with p-type impurities. In the single pixel of the array sensing element, in addition to making _S components, The nMOS transistor itself then reuses the semiconductor plug on page 15 498406. V. Description of the invention (l2) —— (p 1 ug) technology makes the source of the transistor connected to the electrode). A pin 2 1 0 is formed on the source terminal, and a metal layer (as the source | metal layer as the source electrode 212. Another electrode (a gold i metal layer pattern plate is deposited on the pin and surrounds the source electrode 214, ^ Child pole) 'then the above pin technology connects this electrode to the substrate (ie, 2 j, using semiconductors to make it the same potential as the substrate. Finally, the electrode is etched using the method) 216, the dielectric protective layer Etching away, the upper metal layer electrode above the water at this time! The coating method deposits a conductive material on the electrode in a shape of 12 ′ using | 218 (the upper metal as the seed layer (seeding electrode | Electrode and ground electrode), into the bulk electrode | 2 2 0 production. One pixel as early as the wind | Each pixel in the above-mentioned surface array sensing element is an oxide layer as a 々 | layer separated, each column of pixels The gate is connected to a row decoder 50 of the signal reading circuit with a metal gate, and the drain of each row of pixels is connected to the inverter 24 of the signal output circuit 20 of the signal reading circuit 20 for reuse. Line Solution 3 = Decoder) 40 controls its sequential reading. In addition Ί before, the child-based materials such as gold, silver, nickel, nickel-iron alloy, I TO like creator. Effect of the invention] Shu
I 匕时本發明之指紋影像擷取裝置及其製作方法，由於藉由 !簡單的訊號處理電路架構，即完成指紋影像擷取裝置，達 I成下列之功效： (1)每一個像素所擷取的訊號只有高準位（表示指紋 峰）及低準位（表示指紋谷）的數位訊號，沒有類比的小訊 號’故無需在每一個像素下另外加上放大器或比較器作訊 第16頁 498406 i五、發明說明（13) 號處理。 (2 )每一個像素下只有一個電晶體作為開關，可以縮 |小電極的面積以增加電極的數目，使影像的解析度提高。 | (3)由於在每一個像素下只有一個電晶體，可大量的 !減少功率消耗及降低製作成本，因此本發明可解決現有技 i術的缺點。 I (4)指紋影像擷取裝置中之電晶體數目大量減少。 (5)指紋影像擷取裝置中之功率消耗低。 ： (6)指紋影像擷取裝置中之訊號擷取速度快。 ! ( 7 )可以縮小電極面積，增加電極數目，提高解析 丨度。 丨 綜上所述，充份顯示出本發明之指紋影像擷取裝置及 其製作方法之目的及功效上均深富實施之進步性，極具產 業之利用價值，且為目前市面上前所未見之新發明，完全 符合發明專利之要件，爰依法提出申請。 雖然本發明以前述之較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明之 i保護範圍當視後附之申請專利範圍所界定者為準。 第17頁 498406 :圖式簡單說明 【圖式簡單說明】 | |第1圖係為本發明指紋影像擷取裝置之主要電路連接圖； I第2圖係為本發明指紋影像擷取裝置中，單一像素之結構 :不意圖， !第3圖係為本發明指紋影像擷取裝置中，指紋訊號擷取之 i ! ί I路線示意圖；The fingerprint image capture device of the present invention and the manufacturing method thereof, because the fingerprint image capture device is completed by using a simple signal processing circuit architecture, which achieves the following functions: (1) captured by each pixel The signals taken are only digital signals with high level (representing the fingerprint peak) and low level (representing the fingerprint valley). There is no small signal by analogy, so there is no need to add an amplifier or comparator for each pixel. 498406 i V. Invention Description (13) Processing. (2) There is only one transistor under each pixel as a switch, which can reduce the area of the electrode to increase the number of electrodes and improve the resolution of the image. (3) Since there is only one transistor under each pixel, a large amount of power can be reduced and the production cost can be reduced. Therefore, the present invention can solve the disadvantages of the prior art. I (4) The number of transistors in the fingerprint image capturing device is greatly reduced. (5) The power consumption in the fingerprint image capture device is low. : (6) The signal capture speed in the fingerprint image capture device is fast. (7) can reduce the electrode area, increase the number of electrodes, and improve the resolution.丨 In summary, the fingerprint image capturing device and the manufacturing method of the present invention fully demonstrate the purpose and effectiveness of the implementation and the progress, which is of great industrial use value and is unprecedented in the current market. The new invention you see fully meets the requirements for an invention patent, and you apply according to law. Although the present invention is disclosed in the foregoing preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the invention shall be determined by the scope of the attached patent application. Page 17 498406: Simple illustration of the drawings [Simplified illustration of the drawings] | | Figure 1 is the main circuit connection diagram of the fingerprint image capture device of the present invention; I Figure 2 is the fingerprint image capture device of the present invention, Structure of a single pixel: No intention! Figure 3 is a schematic diagram of the route of fingerprint signal capture in the fingerprint image capture device of the present invention; ίI;
j I i第4圖係為本發明指紋影像擷取裝置中，一線陣列訊號之 丨指紋訊號擷取之路線示意圖； 第5圖係為本發明指紋影像擷取裝置中，單一像素模擬之 等效電路圖； _ 第6圖係為本發明指紋影像擷取裝置中，複數個像素結構 配合指紋訊號擷取之剖面示意圖； 第7圖係為本發明之指紋影像擷取裝置之單一像素的製作 方法流程圖。 【符 號說 明 1 10 面 陣 列 感 測 元件 12 訊 號 讀 取 電 路 15 單 一 像 素 20 訊 號 m 出 電 路 22 控 制 電 晶 體 24 反 相 器 30 閂 鎖 電 路 40 行 解 碼 器 50 列 解 碼 器 第18頁 498406 圖式簡單說明 55 電晶體 56 突塊電極 100 指紋 101 指紋峰 102 指紋谷 150 源極電極 160 接地電極 170 基材 172 閘極 174 氧化層 175' 1 7 6 插銷 178 上金屬層 180 保護層Figure 4 is a schematic diagram of the route of fingerprint signal capture of a line array signal in the fingerprint image capture device of the present invention. Figure 5 is the equivalent of a single pixel simulation in the fingerprint image capture device of the present invention. Circuit diagram; _ Figure 6 is a schematic cross-sectional view of a plurality of pixel structures and fingerprint signal capture in a fingerprint image capture device of the present invention; Figure 7 is a flow chart of a method for manufacturing a single pixel of a fingerprint image capture device of the present invention Illustration. [Symbol description 1 10 area array sensing element 12 signal reading circuit 15 single pixel 20 signal m output circuit 22 control transistor 24 inverter 30 latch circuit 40 row decoder 50 column decoder page 18 498406 The diagram is simple Description 55 transistor 56 bump electrode 100 fingerprint 101 fingerprint peak 102 fingerprint valley 150 source electrode 160 ground electrode 170 substrate 172 gate 174 oxide layer 175 '1 7 6 latch 178 upper metal layer 180 protective layer