TW472251B - An optical recording medium and method for using same - Google Patents
An optical recording medium and method for using same Download PDFInfo
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- TW472251B TW472251B TW089107394A TW89107394A TW472251B TW 472251 B TW472251 B TW 472251B TW 089107394 A TW089107394 A TW 089107394A TW 89107394 A TW89107394 A TW 89107394A TW 472251 B TW472251 B TW 472251B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25716—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing sulfur
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0045—Recording
- G11B7/00454—Recording involving phase-change effects
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Recording Or Reproduction (AREA)
- Optical Head (AREA)
Abstract
Description
472251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(1 ) 發明背景 1 、發明背景 本發明有關一種光記錄媒介及一種記錄及複常s亥光g己 錄媒介之方法。詳言之,本發明之光記錄媒介係爲一種藉 由位於與該媒介表面極近距離之光學頭由與該基材相對之 記錄層側面施加雷射光束於該媒介的類型。 2、相關技藝描述 目前一般使用之大部分光記錄媒介皆爲其中雷射光束 係穿透基材而施加於記錄層之類型。 相反地,近來之重點在爲使用位於距媒介表面極小距 離之光學頭自記錄層側面施加雷射光束於該媒介上’而不 穿透該基材之類型’如同使用具有飛行滑動器(f 1 y in g slider )的飛行光學頭,其類似於硬碟的飛行光學頭物鏡 透鏡固定在飛行光學頭(日本雜誌”電子學” ’ ◦ hm Co. 所出版,1 9 9 6年5月,P 8 7 — 9 1頁)。此種媒 介係稱爲”層側入射型”媒介。 此種層側入射型媒介中,不使用供焦點控制所使用之 主動器(使用於一般光學頭中)而該光學頭距離該媒介表 面的固定飛行高度使得光束之焦點與記錄層相符。如前述 雜誌所述,光學頭較靠近記錄媒介的表面是較佳的因爲其 使得光束於焦點之直徑較小而記錄密度增加’故介於物鏡 透鏡與記錄媒介表面間之間隙通常係爲1微米或更小。 已提出另一種層側入射類型。即,不同於前述小間隙 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨0 x 297公釐〉 -4 - I 批水 ; 訂 線 (請先聞讀背面之注意事項再填寫本頁) 經濟部智慧財產局8工消費合作社印製 472251 A7 ___B7______ 五、發明説明(2) 系統,配有焦點控制主動器的光學頭,類似於供習用基材 側入射型媒介所使用的光學頭,係用以記錄及複製資料於 光記錄媒介中,但光束係記錄層側面施加於該媒介未經由 基材(Shin-Gij utsu Communications 所出版之雜誌 ” 0 加 E” >1998年2月第20冊,編號2,第183 — 1 8 6頁;1 9 9 8 〇 S A技術槪述系列第8冊, 1998年5月10 — 13,第131 — 133頁之公告 編號WA2”光學數據儲存硏討會版”)。 前述兩參考資料之技術係欲藉著具有由結合兩特定透 鏡所得之高數値口徑(N A )之光學系統與具有形成於頂 介電層上(即,於該光束入射側上)且厚度1 0 0微米之 有機塗層(經光學固化之樹脂層或透明層)之光學特性, 以增加記錄密度,其具有在與目前使用之媒介比較之下, 大幅增加記錄密度之機率。然而,於此技術中,介於光學 頭與記錄層間之距離增加至少該有機塗層之厚度,且介於 該光學頭與該媒介表面間之距離係因使用與該基材側入射 類型相同之光學系統而增加,故限制該記錄之密度。 相反地,小間隙方式之層側入射類型媒介理論上可達 到較高之記錄密度,因此具有吸引力。雖然層側入射型媒 介可具有高於習用媒介之記錄密度,而已開始其硏究,但 尙未達到實際記錄及複製之程度,仍有各種尙待解決之問 題。 本發明係關於小間隙方式層側入射型媒介的改善,解 決本發明者所發現之下述問題。 . IJ 訂 I 線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格< 210X 297公釐) _ 5 _ 經濟部智慧財產局員工消費合作社印製 472251 A7 ____ m__ 五、發明説明(3) 即,本發明者硏究層側入射型媒介,其包括依序位於 聚碳酸酯基材上之反射層、底介電層、記錄層及頂介電層 ,且發現一問題,即置於飛行光學頭上之物鏡透鏡被霧化 或變髒。複製時,追蹤控制毫無問題。然而,一旦施加相 對高能量之雷射光束以供記錄或抹除,則追蹤控制立即因 爲受霧化之物鏡透鏡而變得困難,甚至變得無法複製。 本發明之目的係解決前述問題,及提供一種小間隙方 式之層側入射型媒介,其中防止透鏡之霧化,而可長時間 使用。 發明槪述 本發明藉著提供光學記錄媒介而達成前述及其他目的 .,該媒介係包括一基材、及依此次序形成於該基材上之至 少一記錄層及頂無機層,其中記錄及複製係藉著自位於該 頂無機層側面上之光學頭施加光束於該記錄媒介而進行, 其特徵爲該頂無機層之結構係使得存在於該光學記錄媒介 之頂面上的外來物質在供記錄用之光束施加於該記錄媒介 時不致蒸發。特別是,該頂無機層被製備以便具有下面兩 特色中之一者: A )該頂無機層係包括第一介電層,其具有一厚度以 使,當供記錄用之光束施加於該記錄媒介時,該記錄媒介 之頂面的溫度不會增加至使得存在於該光學記錄媒介頂面 上之外來物質蒸發之程度(本發明第一態樣):及 B )該頂無機層係包括依序位於該記錄層上之第二介 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-6 _ I I I I I ΙΊ n 訂 · . ~"線 (請先閱讀背面之注意事項再填寫本頁) 472251 經濟部智慧財產局員工消費合作社印製 A7 B7五、發明説明(4) 電層、金屬層及第三介電層的層壓結構,藉此當供記錄用 之光束施加於該記錄媒介時,該記錄媒介之頂面的溫度不 會增加至使得位於該光學記錄媒介頂面上之外來物質蒸發 之程度(本發明第二態樣)。 本文中,”記錄”係爲廣義定義,且包括”寫入”( 有時亦稱爲狹義之”記錄”)及”抹除”。相變化型光學 記錄媒介中,一般係進行直接之重複寫上,其中用於寫入 之高能量脈衝及用於抹除之中能量脈衝係使用於記錄,而 具有低能量之光束係使用於複製。磁-光記錄媒介中,記 錄--般係藉著先掃描具有中能量之抹除光束,之後掃描具 有高能量之寫入光束而進行。本發明中,該媒介之表面的 溫度應於廣義之記錄(即於寫入及抹除期間)中受到抑制 〇 藉著本發明者之徹底硏究,分析發現物鏡透鏡上之霧 度或髒污係黏附外來物質,尤其是黏附水或摻於水中之有 機物質的黏附。本發明者重複實驗並考慮確認髒污之來源 及髒污黏附至透鏡上之機制,及結論是因爲黏附於記錄媒 介(即,層側入射型光學記錄媒介)表面之外來物質’尤 其是受黏附之水及/或有機成分,諸如摻入或黏附於受黏 附之水中之空氣中的油霧。 -透鏡霧化之機制被認爲是因爲施加具有相對闻能量之 雷射光束而使該媒介表面達到高溫,藉此黏附於該媒介表 面之水及有機成分被蒸發’及冷凝於該飛行光學頭之物鏡 透鏡上。然而,因爲光學記錄媒介係爲可移動之媒介並於 本紙張尺度中國國家標準(cNs)A4規格_(210x297公釐) I n n I n Ί. I I ^ —— — — — 線 (請先閱讀背面之注意事項再填寫本頁) 122251 A7 B7 五、發明説明(5 ) 空氣中操作’其異於硬碟,故無法防止光學記錄媒介與空 氣中之溼氣或有機物質接觸,因此媒介表面通常不可避免 地存有或黏附有空氣中之溼氣或有機物質。 本發明達成之理想係爲前述問題可藉著使媒介表面之 溫度低於黏附於該表面之物質蒸發之溫度而解決,發明者 依各種方式硏究此項議題。 首先,本發明者模擬具有習用媒介結構之光學記錄媒 介於記錄及複製期間的表面溫度,發現無法如期望地降低 該結構中媒介表面之溫度。 .此情況下,根據本發明第一態樣,本發明者達成一理 想,即增加頂介電層之厚度以降低媒介表面之溫度,及本 發明者嚐試媒介是否可具有.媒介表面所需之較低溫度,而 於頂介電層厚度增加時,保持光學記錄媒介所期望之性質 。圖2係經由電腦模擬顯示媒介反射性與頂介電層厚度間 之關係。如圖2所示,已確定即使頂介電層之厚度增加, 仍可得到相同之反射性,因此可得到光學記錄媒介所需之 反射性,因此預期在於施加雷射光束期間藉著頂介電層之 增加厚度的絕熱,可抑低媒介表面之溫度。 基於電腦模擬的上述結果及考慮,製造具有增加厚度 之頂介電層的光學記錄媒介被製造,及使用飛行光學頭記 錄及複製予以檢查,結果,如預期般地確認大幅改善,因 而完成本發明,尤其是本發明第一態樣。 相同地,根據本發明第二態樣,本發明者達成一種理 想’即作爲習用媒介之頂介電層可分成兩介電層,而具有 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 丁 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 472251 A7 __ , B7 _ 五、發明説明(6 ) 高熱導係數之金屬層係夾置於該兩介電層之間,以降低媒 介表面之溫度。該兩介電層及其間之金屬層整體於下文中 稱爲”無機保護層”或”頂無機層”。本發明者隨後檢測 光學記錄媒介是否可具有光學記錄媒介所需之低溫,同時 在使用前述頂無機層及改變並調整該頂無機層時保持光學 反應媒介所需之性質。 含有前述三層之頂無機層之光學記錄媒介被製備,及 使用飛行光學頭記錄及複製予以檢查,結果,如預期地大 幅改善,因而完成本發明第二態樣。 如前文所述,本發明中,外來物質係爲黏附於光學記 錄媒介頂面之外來物質,該媒介於施加記錄用光束時之表 面溫度應保持低於蒸發該外來物質的溫度。主要之外來物 質係爲水。因此較佳係該媒介表面之溫度係保持不高於 1 5 0 °C,更佳係不高於1 〇 〇 °c。 根據本發明,亦提供下列方法: 一種記錄及複製光學記錄媒介之方法, 提供光學記錄媒介,其包括基材及依序形成於該基材 上之至少一記錄層及頂無機層,及 藉著由位於該頂無機層側面上之光學頭施加光束於該 記錄媒介,以進行記錄及複製, 其中該頂無機層之結構係使得存在於該光學記錄媒介 頂面上之外來物質不會在將記錄用光束施加於該記錄媒介 時蒸發。 該頂無機層較佳係具有前述兩特色A)及B)中之一 I--------丨裝-----Ί---訂-------線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中.國國家標準(CNS ) Α·4規格(210X297公釐) _ 9 - 472251 A7 B7 五、發明説明(7) 圖式簡單說明 圖1係顯示藉著使用飛行光學頭自該媒介之層側面施 加光束且不穿透該基材而光學地記錄一記錄媒介或光碟之 系統; 圖2係顯示媒介反射性與頂介電層厚度間之關@ ; S 圖3至5係爲本發明光學記錄媒介之剖面_ ° 元件對照表 la 基材 lb 層壓結構 1 光學記錄媒介 2 飛行滑動器 3 懸置 4 透鏡 5 透鏡 6 雷射光束 11 基材 12 反射層 13 底介電層 14 光學記錄層 15 頂介電層 _1 5a 第一頂介電層 本紙張尺度適用中國國家標準(。呢)八4規格(210/297公釐) (請先閱讀背面之注意事項再填寫本頁) .裝·472251 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (1) Background of the Invention 1. Background of the Invention The present invention relates to an optical recording medium and a method for recording and regenerating the recording medium. In detail, the optical recording medium of the present invention is a type in which a laser beam is applied to the medium from the side of the recording layer opposite to the substrate through an optical head located at a close distance from the surface of the medium. 2. Description of related techniques Most of the optical recording media currently in general use are types in which a laser beam penetrates a substrate and is applied to a recording layer. In contrast, recent emphasis has been placed on applying a laser beam from the side of the recording layer to the medium 'without penetrating the substrate' using an optical head located at a very small distance from the surface of the medium as if using a flying slider (f 1 y in g slider), which is similar to a flying optical head of a hard disk. The objective lens is fixed to the flying optical head (Japanese magazine "Electronics", published by hm Co., May 1996, P 8 7 — 9 1). Such media are called "layer-side incident" media. In such a layer-side incident type medium, an actuator (used in a general optical head) for focus control is not used and the fixed flying height of the optical head from the surface of the medium makes the focus of the light beam consistent with the recording layer. As mentioned in the aforementioned magazine, the optical head is closer to the surface of the recording medium because it makes the diameter of the beam at the focal point smaller and the recording density increases. Therefore, the gap between the objective lens and the surface of the recording medium is usually 1 micron. Or smaller. Another type of layer-side incidence has been proposed. That is, different from the aforementioned small gap, the paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0 x 297mm> -4-I batch of water; ordering (please read the precautions on the back before filling this page) ) Printed by the 8th Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 ___B7______ V. Description of the invention (2) The system is equipped with an optical head with a focus control actuator, similar to the optical head used for substrate-side incident media for study purposes It is used to record and reproduce data in optical recording media, but the beam is applied to the medium on the side of the recording layer without using a substrate (magazine "0 plus E" by Shin-Gij utsu Communications) > February 20, 1998 Issue No. 2, pages 183 to 186; 1989, 8 of the SA Technical Description Series, Announcement No. WA2, May 10-13, 1998, pages 131 to 133, "Optical Data Storage Discussion" Conference edition "). The technology of the two references mentioned above is to use an optical system with a high number of apertures (NA) obtained by combining two specific lenses, and having an optical system formed on the top dielectric layer Top) and thickness 100 micron The optical characteristics of organic coatings (optically cured resin layers or transparent layers) to increase recording density have the potential to significantly increase the recording density compared to currently used media. However, in this technology, the media The distance between the optical head and the recording layer is increased by at least the thickness of the organic coating, and the distance between the optical head and the surface of the medium is increased by using an optical system of the same type as the substrate side incidence, so the Recording density. Conversely, the layer-side incident type medium with a small gap method can theoretically achieve a higher recording density and is therefore attractive. Although the layer-side incident type medium can have a higher recording density than the conventional medium, it has begun to Investigated, but it has not reached the level of actual recording and reproduction, and there are still various problems to be solved. The present invention relates to the improvement of the layer-side incident medium of the small gap method, and solves the following problems found by the inventors. IJ order I line (please read the notes on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 specifications < 210 X 297 mm) _ 5 _ Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 ____ m__ V. Description of the Invention (3) That is, the inventor investigated the layer-side incident media, which included polycarbonate in order. The reflective layer, the bottom dielectric layer, the recording layer, and the top dielectric layer on the substrate, and a problem was found that the objective lens placed on the flying optical head was fogged or dirty. There is no problem with tracking control when copying. However, once a relatively high-energy laser beam is applied for recording or erasing, the tracking control immediately becomes difficult due to the fogged objective lens and even becomes impossible to reproduce. The object of the present invention is to solve the aforementioned problems, and to provide a layer-side incident type medium in a small-gap manner, in which the fogging of the lens is prevented and it can be used for a long time. SUMMARY OF THE INVENTION The present invention achieves the foregoing and other objects by providing an optical recording medium. The medium includes a substrate, and at least one recording layer and a top inorganic layer formed on the substrate in this order. Copying is performed by applying a light beam to the recording medium from an optical head located on the side of the top inorganic layer, and is characterized in that the structure of the top inorganic layer allows foreign substances existing on the top surface of the optical recording medium to be supplied. The recording beam is not evaporated when applied to the recording medium. In particular, the top inorganic layer is prepared so as to have one of the following two characteristics: A) The top inorganic layer includes a first dielectric layer having a thickness such that when a light beam for recording is applied to the recording The medium, the temperature of the top surface of the recording medium will not increase to the extent that foreign substances existing on the top surface of the optical recording medium evaporate (first aspect of the invention): and B) the top inorganic layer includes The second paper on the recording layer is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) -6 _IIIII ΙΊ n order. ~ &Quot; line (please read the precautions on the back before filling (This page) 472251 A7 B7 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) The laminated structure of the electrical layer, the metal layer and the third dielectric layer is applied to the recording beam When recording a medium, the temperature of the top surface of the recording medium does not increase to such an extent that foreign substances located on the top surface of the optical recording medium evaporate (a second aspect of the present invention). In this article, "record" is a broad definition and includes "write" (sometimes referred to as "record" in the narrow sense) and "erase". In phase-change optical recording media, direct rewriting is generally performed, in which high-energy pulses for writing and erasing medium-energy pulses are used for recording, and light beams with low energy are used for copying. . In a magneto-optical recording medium, recording is generally performed by first scanning an erasing beam having a medium energy and then scanning a writing beam having a high energy. In the present invention, the temperature of the surface of the medium should be suppressed in a broad record (ie, during writing and erasing). Through thorough research by the inventors, the haze or dirt on the objective lens was found through analysis Adhesion to foreign substances, especially to water or organic substances mixed with water. The inventors repeated the experiment and considered to confirm the source of the dirt and the mechanism by which the dirt adheres to the lens, and concluded that the foreign substance 'especially adhered to the surface of the recording medium (ie, the layer-side incident optical recording medium) was adhered. Water and / or organic ingredients, such as oil mist that is incorporated or adhered to the air in the adhered water. -The mechanism of lens fogging is considered to be due to the application of a laser beam with a relatively high energy to the surface of the medium to a high temperature, whereby the water and organic components adhered to the surface of the medium are evaporated 'and condensed on the flying optical head On the objective lens. However, because the optical recording medium is a removable medium and is in accordance with the Chinese National Standard (cNs) A4 specification_ (210x297 mm) of this paper scale I nn I n Ί. II ^ — — — — Line (please read the back first Please pay attention to this page before filling out this page) 122251 A7 B7 V. Description of the invention (5) Operation in air is different from hard disk, so it cannot prevent the optical recording medium from contacting with moisture or organic substances in the air, so the surface of the medium is usually not Avoid storing or adhering moisture or organic substances in the air. The ideal achieved by the present invention is that the aforementioned problem can be solved by making the temperature of the surface of the medium lower than the temperature at which the substance adhering to the surface evaporates, and the inventor investigated this issue in various ways. First, the inventors simulated the surface temperature of an optical recording medium having a conventional medium structure during recording and reproduction, and found that the temperature of the medium surface in the structure could not be lowered as expected. In this case, according to the first aspect of the present invention, the inventor has reached an ideal, that is, increasing the thickness of the top dielectric layer to reduce the temperature of the surface of the medium, and the inventor tries to determine whether the medium can have the medium surface. Lower temperatures, while maintaining the desired properties of the optical recording medium as the thickness of the top dielectric layer increases. Figure 2 shows the relationship between the media reflectivity and the thickness of the top dielectric layer through computer simulation. As shown in FIG. 2, it has been determined that even if the thickness of the top dielectric layer is increased, the same reflectivity can be obtained, and thus the reflectivity required for an optical recording medium can be obtained. The increased thermal insulation of the layer can reduce the temperature of the surface of the medium. Based on the above-mentioned results and considerations of computer simulation, an optical recording medium having a top dielectric layer with an increased thickness was manufactured, and a flying optical head was used to record and copy it for inspection. As a result, a significant improvement was confirmed as expected, and the present invention was completed , Especially the first aspect of the present invention. Similarly, according to the second aspect of the present invention, the inventors have reached an ideal 'the top dielectric layer as a conventional medium can be divided into two dielectric layers, and the paper size applies the Chinese National Standard (CNS) A4 specification (210X297) (Mm) (Please read the notes on the back before filling out this page) D Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 __, B7 _ V. Description of the Invention (6) A metal layer with a high thermal conductivity is sandwiched between the two dielectric layers to reduce the temperature on the surface of the medium. The entirety of the two dielectric layers and the metal layer therebetween is hereinafter referred to as "inorganic protective layer" or "top inorganic layer". The inventors then tested whether the optical recording medium can have the low temperature required for the optical recording medium, while maintaining the properties required for the optical reaction medium while using the aforementioned top inorganic layer and changing and adjusting the top inorganic layer. An optical recording medium containing the aforementioned three top inorganic layers was prepared, and recorded and copied using a flying optical head for inspection. As a result, it was greatly improved as expected, thus completing the second aspect of the present invention. As mentioned above, in the present invention, the foreign substance is a foreign substance adhered to the top surface of the optical recording medium, and the surface temperature of the medium when the recording light beam is applied should be kept lower than the temperature at which the foreign substance is evaporated. The main foreign substance is water. Therefore, the temperature of the surface of the medium is preferably not higher than 150 ° C, and more preferably not higher than 1000 ° c. According to the present invention, the following method is also provided: A method of recording and reproducing an optical recording medium, providing an optical recording medium including a substrate and at least one recording layer and a top inorganic layer sequentially formed on the substrate, and by An optical head on the side of the top inorganic layer applies a light beam to the recording medium for recording and reproduction. The structure of the top inorganic layer is such that foreign substances existing on the top surface of the optical recording medium will not be recorded. Evaporation occurs when a light beam is applied to the recording medium. The top inorganic layer preferably has one of the foregoing two characteristics A) and B) I -------- 丨 install ----- Ί --- order ------- line (please Please read the notes on the back before filling this page.) This paper size is applicable. National Standard (CNS) Α · 4 size (210X297 mm) _ 9-472251 A7 B7 V. Description of the invention (7) Schematic illustration 1 shows a system for optically recording a recording medium or optical disc by using a flying optical head to apply a light beam from the side of the layer of the medium without penetrating the substrate; FIG. 2 shows the medium reflectivity and the thickness of the top dielectric layer Key @; S Figures 3 to 5 are cross sections of the optical recording medium of the present invention. ° Component comparison table la Substrate lb Laminated structure 1 Optical recording medium 2 Flight slider 3 Mount 4 Lens 5 Lens 6 Laser beam 11 Base material 12 Reflective layer 13 Bottom dielectric layer 14 Optical recording layer 15 Top dielectric layer_1 5a First top dielectric layer This paper is in accordance with Chinese National Standard (..) 8 4 specifications (210/297 mm) ( (Please read the notes on the back before filling out this page).
、1T 經濟部智慧財產局員工消費合作社印製 472251- 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(8 ) 15b 第二頂介電層 1 6 絕熱層 17 頂障壁層或結晶加速層 18 底障壁層或結晶加速層 2 1 基材 2 2 反射層 2 3 底介電層 2 4 光學記錄層 2 5 無機保護層 25a 第一頂介電層 2 5 b 第二頂介電層 2 5 c 金屬層 2 6 絕熱層 2 7 頂障壁層或結晶加速層 2 8 底障壁層或結晶加速層 發明詳述 本發明光學記錄媒介依序包括位於基材上之至少一記 錄層及頂無機層,其中光束係自頂無機層側施加於該媒介 ,以供記錄及複製。該媒介以依序包括位於基材上之反射 層、底介電層、記錄層及頂介電層爲佳。 簡單描述層側入射型光學記錄媒介,其中光束係使用 例如飛行光學頭自頂無機層側施加於該媒介。 參照圖1 ,顯示出光學記錄媒介或碟1之上層或上方 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -11- I--------It衣----Ί--1T------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 472251 A7 _________B7 _ 五、發明説明(9 ) ’包括基材1 a及層壓結構1 b,包括記錄層、飛行滑動 器2及懸置3。當光碟1轉動時,飛行滑動器2於光碟1 i:方飛過’飛越高度係視光碟1之轉動速度及飛行滑動器 2之形狀、重量等而定,而可爲例如丨〇 〇毫微米之大小 。於飛行滑動器2上裝置物鏡透鏡,此實例中其包括兩透 鏡4及5。雷射光束6係穿透該光學系統。若爲磁-光學 記錄媒介,則另外提供磁場(未示)。 記錄及複製可於與習用光學記錄系統相同之方式下進 行’不同處係該光學系統使用飛行光學頭,雷射光束自該 層側施加於該媒介,而不穿透該基材。 (本發明第一態樣) 本發明第一態樣描述於下文。 圖3顯示本發明第一態樣光學記錄媒介之實例。圖3 中,1 1係表示基材,1 6係爲絕熱層,1 2係爲反射層 ,1 3係爲底介電層,1 4係爲光學記錄層諸如相變化型 記錄層’而1 5係爲頂介電層。此種包括反射層1 2及底 介電層1 3之反射層結構最常使用於目前之磁-光學及相 變化型記錄媒介,提供高C / N (複製信號輸出對雜訊比 ),因爲防止不必要之熱擴散,如同其名稱”迅速冷卻結 構”,因此較佳係使用於邊緣記錄系統中,其中記錄點之 邊緣係使用於資料記錄。而且,本發明中,此種具反射層 之結構以使用於高記錄密度下爲佳。 頂介電層1 5之厚度於下文中參照表1及圖2描述。 丨氏張尺度適用中國國S標準(CNS )八杉見格(2!〇Χ297公釐)" -12- ~~' ---------裝-----Ί--訂-----.--線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 472251 A7 B7 _ 五、發明説明(1〇) 表1顯示使用於檢驗中之相變化型記錄媒介之薄層的結構 及光學性質。表1中,未顯示該基材之材料及光學性質, 因爲其與反射性無關。 結構 材料 厚度(毫絶ill 折射率 消光係數 基材 反射層 AlCr 150 _^ 1.226 5.417 底介電 ZnS.Si〇2 18 2.1 8 0.02 層 記錄層 GeSbTe 22 4.099 3.788 頂記錄 ZnS.Si〇2 0-600 2.1 8 0.0 2 層 圖2顯示具有表1所示之前述結構之光學記錄媒介的 光反射性之模擬結果,表現頂介電層1 5之厚度改變的情 況,其中該橫座標係爲頂介電層1 5之厚度’而縱座標係 爲反射性。圖2顯示因爲光干擾,該媒介之反射性的第一 尖峰係出現於厚度約1 5 0毫微米附近’第二尖峰係出現 於約3 0 0毫微米處,而第三尖峰係出現於約略4 5 0毫 微米處。該反射性之特色亦於實際製造之光學記錄媒介的 實驗中得到確認。 習用光學記錄媒介中,所使用之頂介電層的厚度係落 本紙張尺度適用中國國家標準(CNS ) A4規格( 210X297公釐) -13 - --------^_丨丨裝-------訂-------線 (請先閱讀背面之注意事項再填寫本頁) 472251 經濟部智慧財產局員工消費合作杜印製 A7 B7 五、發明説明(11) 於第一尖峰區域中,因爲不需使用如同第二或其他尖峰的 較大厚度,而該層之較大厚度係降低產能。 此情況下,尖峰區域係定義爲包括尖峰之區域,其中 媒介之反射性具有等於或超過記錄及/或複製所需之反射 性的反射性,如調整等情況所需。詳言之,圖2之實例中 ’當反射性之下限係爲2 0百分比時,該第一尖峰區域係 爲該頂介電層之厚度的約9 0毫微米至約1 9 5毫微米。 磁-光學記錄媒介或相變化型光學記錄媒介所需之光 學記錄媒介的反射性通常係介於2 0至5 0百分比之範圍 內,唯其係視驅動之設計或標準而定。 供光學記錄媒介用之標準的範例係爲 I S 0 / I E C 1 3963,其中具有230MB容量 之3 · 5英吋磁-光學記錄媒介之反射性係爲1 2至2 5 百分比;ISO/IEC 16824,其中具有2. 6 MB容量之1 2 0毫米DVD — RAM的溝槽著陸區反射 性係爲1 5至2 5百分比;及 ISO/IEC 16448,其中具有4.7 GB容 量或9 GB雙層容量之1 2 0毫米DVD — RAM的雙層 反射性係爲1 8至3 0百分比。 本發明第一態樣中,頂介電層之厚度係選擇使得光入 射側上媒介表面溫度低於黏附於該媒介表面之外來物質不 蒸發之溫度,而媒介之反射性係等於或高於所需之値。頂 介電層之厚度較佳係爲等於或大於第二尖峰區之厚度。使 用厚層頂介電層,可抑低該媒介表面之溫度,即使係該記 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -14 - 丨; 裝 ; 訂 . 線 (請先閲讀背面之注意事項再填寫本頁) 472251 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(12) .録層Z溫度升至高溫時亦然。若使用等於或大於第三尖峰 區之厚度’則可得到更明顯之效果。意外地,當媒介表面 溫度增加被抑制時,可形成於頂介電層之潤滑層的耐熱性 需求可明顯地被舒解,其係另一種效果。 前述考慮及實驗中,使用其中記錄時之反射性低於抹 除時之相變化型光學記錄媒介,顯然可於反型媒介中得到 相同效果,即記錄時之反射性高於抹除時之相變化型光學 記錄媒介。而且,磁-光學記錄媒介中可得到相同效果。 頂介電層1 5之厚度以較厚爲佳,以降低該媒介表面 之溫度,而較薄係較有利於產能。因此,頂介電層1 5之 厚度以不超過1微米爲佳。而且,當厚度超過1微米時, 該層之應力變得太高,而該層易剝離或捲曲。 介於該媒介頂面與該光學頭之物鏡透鏡間的距離以儘 可能地小爲佳,以增加該記錄密度。是故,本發明特別適 用於介於該媒介頂面與該光學頭之物鏡透鏡間之距離小達 約1微米或更小之情況。此情況下,該物鏡透鏡係意指光 束之光學系統的輸出端,而包括前述雜誌”電子學”所描 述之固體沈浸透鏡。 頂介電層之折射率以不低於1 · 7 0爲佳。已知於該 物鏡透銳與欲於顯微鏡中觀察之試樣或目標間置入具有髙 祈射率之油可增加該顯微鏡之解析能力。本發明中,藉著 使用具有尚折射率之頂介電層,可進一步抑制光束之焦點 (光束擴展)。頂介電層之折射率係爲當頂介電層包括多 層介電層時,藉計算所得之複合折射率。此種複合折射率 (請先閲讀背面之注意事項再填寫本頁) -裝- --c- 線- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 472251 A7 B7 五、發明説明(13) 可由藉著多層膜之個別轉換矩陣乘積所得之整體轉換矩陣 而衍化(參照金屬—介電多層物,Macdonald,Adam Hilger (London),第 9 頁,1971 年)。 該頂介電層可爲c a 1 c q g e n i d e s、氮化物及氧化物諸如 ZnS . Si〇2'ZnS'SiN'GeN'1T printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251-printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (8) 15b Second top dielectric layer 1 6 Insulation layer 17 Top barrier layer or crystal Acceleration layer 18 Bottom barrier layer or crystallization acceleration layer 2 1 Substrate 2 2 Reflective layer 2 3 Bottom dielectric layer 2 4 Optical recording layer 2 5 Inorganic protective layer 25a First top dielectric layer 2 5 b Second top dielectric layer 2 5 c Metal layer 2 6 Insulation layer 2 7 Top barrier layer or crystallization accelerating layer 2 8 Bottom barrier layer or crystallization accelerating layer Detailed description of the invention The optical recording medium of the present invention sequentially includes at least one recording layer and a top inorganic layer on a substrate. Layer, where the light beam is applied to the medium from the top inorganic layer side for recording and reproduction. The medium preferably includes a reflective layer, a bottom dielectric layer, a recording layer, and a top dielectric layer in order on a substrate. A layer-side incident optical recording medium is briefly described in which a light beam is applied to the medium from the top inorganic layer side using, for example, a flying optical head. Referring to FIG. 1, it is shown that the optical recording medium or the upper or upper layer of the disc 1 is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) -11- I -------- It clothing --- -Ί--1T ------ ^ (Please read the notes on the back before filling out this page) Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 _________B7 _ V. Description of the invention (9)' Including substrate 1 a and laminated structure 1 b include a recording layer, a flying slider 2 and a suspension 3. When the optical disc 1 rotates, the flying slider 2 flies over the optical disc 1 i: Fly over 'depending on the rotation speed of the optical disc 1 and the shape and weight of the flying slider 2, and it can be, for example, 〇〇〇nm Its size. An objective lens is mounted on the flight slider 2. In this example, it includes two lenses 4 and 5. The laser beam 6 penetrates the optical system. In the case of a magneto-optical recording medium, a magnetic field (not shown) is additionally provided. Recording and reproduction can be performed in the same manner as conventional optical recording systems. The difference is that the optical system uses a flying optical head, and a laser beam is applied to the medium from the layer side without penetrating the substrate. (First Aspect of the Invention) A first aspect of the invention is described below. Fig. 3 shows an example of a first aspect of the optical recording medium of the present invention. In Fig. 3, 11 indicates the base material, 16 indicates the thermal insulation layer, 12 indicates the reflective layer, 13 indicates the bottom dielectric layer, and 14 indicates the optical recording layer such as a phase-change recording layer. 5 is the top dielectric layer. This type of reflective layer structure including reflective layer 12 and bottom dielectric layer 13 is most commonly used in current magneto-optical and phase-change recording media, providing high C / N (copy signal output to noise ratio) because Prevent unnecessary thermal diffusion, as its name "rapid cooling structure", so it is preferably used in edge recording systems, where the edge of the recording point is used for data recording. Further, in the present invention, such a structure having a reflective layer is preferably used at a high recording density. The thickness of the top dielectric layer 15 is described below with reference to Table 1 and FIG. 2.丨 The Zhang scale is applicable to China National Standard S (CNS) Yasugi see grid (2! 〇 × 297 mm) " -12- ~~ '--------- 装 ----- Ί--Order -----.-- Line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 B7 _ 5. Description of the invention (1〇) Table 1 shows the use in inspection Structure and optical properties of a thin layer of a phase change recording medium. In Table 1, the material and optical properties of the substrate are not shown because it has nothing to do with reflectivity. Thickness of structural material (refractive index extinction coefficient substrate reflection layer AlCr 150 _ ^ 1.226 5.417 bottom dielectric ZnS.Si〇2 18 2.1 8 0.02 layer recording layer GeSbTe 22 4.099 3.788 top recording ZnS.Si〇2 0-600 2.1 8 0.0 2 layers Figure 2 shows the simulation results of the light reflectivity of an optical recording medium with the aforementioned structure shown in Table 1, showing the change in the thickness of the top dielectric layer 15 where the horizontal coordinate system is top dielectric. The thickness of layer 15 'and the vertical coordinate system are reflective. Figure 2 shows that the first peak of the reflectivity of the medium appears near the thickness of about 150 nm due to light interference. The second peak appears at about 3 0 nm, and the third peak appears at about 450 nm. This reflective feature has also been confirmed in experiments with actual manufactured optical recording media. In conventional optical recording media, the top used The thickness of the dielectric layer is based on the paper standard applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -13--------- ^ _ 丨 丨 Installation ------- Order- ----- Line (Please read the precautions on the back before filling this page) 472251 Duo printed A7 B7 for employee cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (11) In the area of the first peak, it is not necessary to use a larger thickness like the second or other peaks, and the larger thickness of this layer is Decrease productivity. In this case, the spike area is defined as the area including spikes, in which the reflectivity of the medium is equal to or exceeds the reflectivity required for recording and / or reproduction, such as for adjustments. In the example of FIG. 2, when the lower reflection limit is 20%, the first peak region is about 90 nm to about 195 nm of the thickness of the top dielectric layer. Magneto-Optics The reflectivity of the optical recording medium required for the recording medium or the phase-change optical recording medium is usually in the range of 20 to 50 percent, depending on the design or standard of the drive. An example of a standard is IS 0 / IEC 1 3963, where the reflectivity of a 3.5-inch magnetic-optical recording medium with a capacity of 230 MB is 1 2 to 2 5 percent; ISO / IEC 16824, which has 2. 6 MB Capacity 120 mm DVD The groove landing area of RAM is 15 to 25 percent reflective; and ISO / IEC 16448, which has a 4.7 GB capacity or a 9 GB double-layer capacity of 120 mm DVD — the double-layer reflectance of RAM is 1. 8 to 30 percent. In the first aspect of the present invention, the thickness of the top dielectric layer is selected so that the surface temperature of the medium on the light incident side is lower than the temperature at which the foreign substances adhered to the surface of the medium do not evaporate, and the medium is reflective Is equal to or higher than required. The thickness of the top dielectric layer is preferably equal to or greater than the thickness of the second peak region. The use of a thick top dielectric layer can reduce the temperature of the surface of the medium, even if the paper size of the notebook is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) -14-丨; order; wire (please (Please read the notes on the back before filling in this page) 472251 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (12). The same applies when the temperature of the recording layer Z rises to a high temperature. If a thickness equal to or greater than the third peak region 'is used, a more pronounced effect can be obtained. Surprisingly, when the increase in the surface temperature of the medium is suppressed, the heat resistance requirement of the lubricating layer that can be formed on the top dielectric layer can be significantly relieved, which is another effect. In the foregoing considerations and experiments, the use of a phase-change optical recording medium in which the reflectivity at the time of recording is lower than that at the time of erasing, obviously the same effect can be obtained in the reverse type medium, that is, the reflectivity at the time of recording is higher than that at the time of erasing. Variable optical recording medium. Moreover, the same effect can be obtained in a magneto-optical recording medium. The thickness of the top dielectric layer 15 is preferably thicker in order to reduce the temperature of the surface of the medium, and the thinner layer is more conducive to productivity. Therefore, the thickness of the top dielectric layer 15 is preferably not more than 1 m. Moreover, when the thickness exceeds 1 micron, the stress of the layer becomes too high, and the layer is easily peeled or curled. The distance between the top surface of the medium and the objective lens of the optical head is preferably as small as possible to increase the recording density. Therefore, the present invention is particularly suitable for a case where the distance between the top surface of the medium and the objective lens of the optical head is as small as about 1 micrometer or less. In this case, the objective lens means the output end of the optical system of the light beam, and includes the solid immersion lens described in the aforementioned magazine "Electronics". The refractive index of the top dielectric layer is preferably not less than 1.70. It is known that inserting an oil having a 髙 ray rate between the sharpness of the objective lens and the sample or target to be observed in the microscope can increase the resolution of the microscope. In the present invention, by using a top dielectric layer having a high refractive index, the focus of the light beam (beam spreading) can be further suppressed. The refractive index of the top dielectric layer is a composite refractive index obtained by calculation when the top dielectric layer includes multiple dielectric layers. This composite refractive index (please read the precautions on the back before filling this page) -Packing---c- Line-This paper size is applicable to China National Standard (CNS) A4 (210X 297 mm) 472251 A7 B7 V. Description of the invention (13) can be derived from the overall conversion matrix obtained by multiplying the individual conversion matrices of the multilayer film (refer to Metal-Dielectric Multilayer, Macdonald, Adam Hilger (London), p. 9, 1971). The top dielectric layer may be c a 1 c q g e n i d e s, nitrides and oxides such as ZnS. Si〇2'ZnS'SiN'GeN '
AlSiN、Al2〇3、Si〇2、Ta2〇5、Ti〇2 及Y 2 0 3及其組合物。此等薄層之組合物可爲理想配比 或接近理想配比。其中,以Z n. S . S i 〇 2層較佳,因 爲其具有低熱導係數及穩定之非晶狀態,無法藉由加熱輕 易結晶。頂介電層可藉著物理蒸汽沉積諸如濺鍍而形成。 該Z n S · S i〇2層可藉著濺鍍比例約8 〇莫耳百分比 至約2 0莫耳百分比之Ζ η ◦與S i 〇2混合物而形成。 圖4係顯示本發明第一態樣之較佳具體實例,其中頂 介電層1 5係分成兩個第一頂介電層1 5 a及第二頂介電 層1 5b。該第一頂介電層1 5 a係具低熱導係數,而該 第二介電層15b係具有高硬度。 若該頂介電層係包括多個薄層,則總厚度係經選擇, 以使該媒介之表面溫度低於位於該媒介上之外來物質蒸發 的溫度。例如,可使用圖2中第二尖峰區域之厚度或較厚 之厚度。硬質第二頂介電層可由氮化矽或經氫化之鑽石型 碳(D L C )製得。此種情況下,該硬質第二頂介電層之 厚度通常係介於1 0至1 5 0毫微米之範圍內,而該頂介 電層之殘留厚度係包括低熱導係數頂介電層。 頂介電層之低熱導係數介電層較佳係具有低達5瓦/ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -16 - ----------裝— (請先閲讀背面之注意事項再填寫本頁) 訂 線 經濟部智慧財產局員工消費合作社印製AlSiN, Al203, Si02, Ta205, Ti02, and Y203, and combinations thereof. The composition of these thin layers can be at or near the ideal ratio. Among them, the Z n. S. Si 02 layer is preferable because it has a low thermal conductivity and a stable amorphous state, and cannot be easily crystallized by heating. The top dielectric layer may be formed by physical vapor deposition such as sputtering. The Z n S · S i02 layer may be formed by a mixture of Z η ◦ and S i 02 with a sputtering ratio of about 800 mole percent to about 20 mole percent. Fig. 4 shows a preferred embodiment of the first aspect of the present invention, in which the top dielectric layer 15 is divided into two first top dielectric layers 15a and a second top dielectric layer 15b. The first top dielectric layer 15a has a low thermal conductivity, and the second dielectric layer 15b has a high hardness. If the top dielectric layer includes a plurality of thin layers, the total thickness is selected so that the surface temperature of the medium is lower than the temperature at which foreign substances located on the medium evaporate. For example, the thickness of the second peak area in FIG. 2 or a thicker thickness may be used. The second hard top dielectric layer may be made of silicon nitride or hydrogenated diamond-type carbon (DLC). In this case, the thickness of the hard second top dielectric layer is usually in the range of 10 to 150 nm, and the remaining thickness of the top dielectric layer includes a low thermal conductivity top dielectric layer. The low thermal conductivity dielectric layer of the top dielectric layer is preferably as low as 5 watts / this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -16----------- Packing-(Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
47225L A7 B7 五、發明説明(14) (mxk )之熱導係數,其中m係表示米,而k係表示絕 對溫度,其係由該模擬等而間接地估計,因爲該介電層之 熱導係數的直接測量相當困難。 圖4中,出示頂障壁層或結晶加速層1 7及底障壁層 或結晶加速層1 8,唯此等薄層係視情況而存在。 (本發明第二態樣) 下文係描述本發明之第二態樣。 圖5係顯示本發明第二態樣之光學記錄媒介的實例。 圖5中,2 1係表示基材,26係表示絕熱層,22係爲 反射層,2 3係底介電層,2 4係光學記錄層諸如相變化 型記錄層,而2 5係爲無機保護層。該無機保護層2 5係 包括第一頂介電層(頂層頂介電層)2 5 a 、第二頂介電 層(底層頂介電層)2 5 b及金屬層2 5 c。包括反射層 2 2及底介電層2 3之反射層結構最常使用於目前之磁-光學及相變化型記錄媒介中,而提供高値C / N (載流子 對雜訊比例),如參照本發明第一態樣所述。圖5中,亦 出示頂障壁層或結晶加速層2 7及底障壁層或結晶加速層 2 8,唯此等薄層1 7及1 8及絕熱層2 6係視情況使用 〇 該無機保護層係描述於下文。該金屬層2 5 C係作爲 熱擴散層,以防止媒介表面溫度升高,其係爲本發明最重 要之部分。即,於記錄或抹除期間,光束主要係被記錄層 所吸收,而轉換成熱。因爲記錄層中之熱移至該媒介表面 本紙張尺度適用中.國國家標準(CNS ) A4規格(210X297公釐) -17 _ -------^-I 1¾衣--I (請先閱讀背面之注意事項再填寫本頁) *?τ 線 經濟部智慧財產局員工消費合作社印製 472251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(15) ’故該媒介表面之溫度升高。然而’本發明第二態樣中, 因爲由該記錄層至該媒介表面之路徑中存在具有高熱導係 數之金屬層,故該熱係於金屬層上橫向地擴散,而防止該 媒介表面之溫度增高。此係由實驗確認。 該金屬層較佳具有高熱導係數,以作爲熱擴散層。因 此,該金屬層較佳係包括金(A u )、銀(A g )、銅( Cu)、及鋁(A 1 )與其合金。包含摻有〇 . 5原子百 分比(原子百分比)或更高之銅之銀的合金係具有高熱導 係數,較A u便宜,具有可比美A 1之高熱導係數,而耐 蝕性較單獨使用A g優越,因此,較有利於本發明。A g 合金中之C u含量不大於2 0百分比時,因爲對於性能之 波長相依性低,故可使用於各種波長之光學頭而較佳。亦 可於A g與C u之合金中添加最高約3原子百分比之T i ,Ta,Pd,Nb,Ni 等。 因爲熱導係數難以測量,故難以確認該金屬層之熱導 係數。然而,由模擬等情況考慮該金屬層之熱導係數應約 5 0瓦/ (mxK)或更闻’其中m係表不米,K係表示 絕對溫度。 該金屬層之厚度係介於5至5 0毫微米範圍內爲佳。 若該厚度小於5毫微米,則熱擴散之效應不足,而防止媒 介表面溫度增高之效果低。若該厚度高於5 0毫微米,則 該媒介之反射性變得太高,而遠超過在磁一光學記錄媒介 或相變化型光學記錄媒介存在下之標準反射性的約2 〇百 分比至約5 0百分比之範圍內。雖然媒介所需之反射性可 本紙張尺度適用中國國家標準(CNS ) A4規格{ 210X297公釐) -18 - I----------裝-----Ί--訂-------線 (請先閱讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製47225L A7 B7 V. Description of the invention (14) (mxk) Thermal conductivity coefficient, where m is the meter and k is the absolute temperature, which is estimated indirectly from the simulation etc., because the thermal conductivity of the dielectric layer Direct measurement of the coefficients is quite difficult. In FIG. 4, the top barrier layer or the crystallization accelerating layer 17 and the bottom barrier layer or the crystallization accelerating layer 18 are shown, but these thin layers exist depending on the situation. (Second Aspect of the Invention) The following describes the second aspect of the invention. Fig. 5 shows an example of an optical recording medium according to a second aspect of the present invention. In FIG. 5, 21 indicates a base material, 26 indicates a thermal insulation layer, 22 indicates a reflective layer, 23 indicates a bottom dielectric layer, 24 indicates an optical recording layer such as a phase-change recording layer, and 25 indicates an inorganic layer. The protective layer. The inorganic protective layer 25 includes a first top dielectric layer (top top dielectric layer) 2 5 a, a second top dielectric layer (bottom top dielectric layer) 2 5 b, and a metal layer 2 5 c. The reflective layer structure including the reflective layer 22 and the bottom dielectric layer 23 is most commonly used in current magneto-optical and phase-change recording media, and provides high 値 C / N (carrier-to-noise ratio), such as With reference to the first aspect of the present invention. In FIG. 5, the top barrier layer or the crystallization accelerating layer 27 and the bottom barrier layer or the crystallization accelerating layer 28 are also shown, but these thin layers 17 and 18 and the heat insulating layer 26 are used as appropriate. The inorganic protective layer The system is described below. The metal layer 2 5 C is used as a heat diffusion layer to prevent the surface temperature of the medium from rising, which is the most important part of the present invention. That is, during recording or erasing, the light beam is mainly absorbed by the recording layer and converted into heat. Because the heat in the recording layer moves to the surface of the medium, the paper size is applicable. National Standard (CNS) A4 specification (210X297 mm) -17 _ ------- ^-I 1¾ 衣 --I (Please (Please read the notes on the back before filling this page) *? Τ Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed 472251 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (15) 'So the surface of the medium The temperature rises. However, in the second aspect of the present invention, because a metal layer having a high thermal conductivity exists in the path from the recording layer to the surface of the medium, the heat is diffused laterally on the metal layer to prevent the temperature of the surface of the medium. Increase. This is confirmed experimentally. The metal layer preferably has a high thermal conductivity as a heat diffusion layer. Therefore, the metal layer preferably includes gold (A u), silver (A g), copper (Cu), and aluminum (A 1) and an alloy thereof. Alloys containing silver doped with copper of 0.5 atomic percent (atomic percentage) or higher have a high thermal conductivity, are cheaper than Au, have a high thermal conductivity comparable to that of A1, and have a higher corrosion resistance than Ag alone. Superior and therefore more advantageous to the present invention. When the Cu content in the Ag alloy is not more than 20%, the wavelength dependence on performance is low, so it can be used for optical heads of various wavelengths. It is also possible to add Ti, Ta, Pd, Nb, Ni, etc. up to about 3 atomic percent to the alloy of Ag and Cu. Since the thermal conductivity is difficult to measure, it is difficult to confirm the thermal conductivity of the metal layer. However, the thermal conductivity of the metal layer should be about 50 watts / (mxK) or more by simulation, etc., where m is a meter and K is an absolute temperature. The thickness of the metal layer is preferably in a range of 5 to 50 nm. If the thickness is less than 5 nm, the effect of thermal diffusion is insufficient, and the effect of preventing the surface temperature of the medium from increasing is low. If the thickness is more than 50 nm, the reflectivity of the medium becomes too high, and far exceeds about 20% to about 20% of the standard reflectivity in the presence of a magnetic-optical recording medium or a phase-change optical recording medium. Within 50 percent. Although the reflectivity required by the medium can be adapted to the Chinese National Standard (CNS) A4 specification {210X297 mm) on this paper scale -18-I ---------- Installation ----- Ί--Order- ------ line (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
47225J A7 B7 五、發明説明(16) 視該設計包括驅動之放大器增量而調整,新方法應與舊方 法具有相容性,因此應可避免太高之反射性。此外,本發 明較佳係應用於相變化型光學記錄媒介,其中採用媒介於 該記錄層係爲結晶相與其係爲非晶相間之反射性差,而得 到複製信號。然而,若該金屬層於相變化型光學記錄媒介 中係較5 0毫微米厚,則記錄層係爲結晶相與其係爲非晶 相間之媒介反射性差小,而無法得到優越之C / N比例, 此點極大之缺點。 而且,於相變化型光學記錄媒介--其中該金屬具有 2 0至5 0毫微米之厚度--中,該媒介於記錄層係爲非 晶相(記錄標記部分)時之反射性可高於其係爲結晶相( 抹除部分)之情況。此媒介中,因爲媒介之反射性於記錄 時增加,故其稱爲”低至高結構”(”低至高極性”), 已知其可降低高密度記錄中之顫動。詳言之,若具有易直 接重複寫上之特徵的相變化型光學記錄媒介中,已知若該 記錄層之高溫於經記錄標記部分(非晶形部分)與經抹除 部分(結晶部分)間相異,則新寫於先前經記錄標記部分 (非晶形部分)上之記錄標記部分及新寫於先前經抹除部 分(結晶部分)上之記錄標記部分具有彼此相異之尺寸及 形狀,破壞信號品質(增高之顫動)。是故,於經抹除部 分(結晶部分.)上寫上新記錄標記部分需要之熱容高於藉 該結晶相之熔化熱在非晶形部分上寫上新記錄標記部分。 因此,該媒介較佳係吸收增量能量之光束’對應於熔化該 結晶相之熱容,換言之,該媒介之反射性應小對應於前述 本紙張尺度適用中.國國家標準(CNS ) A4規格(2丨0X297公釐) -19 - I-----------裝-------訂-------線 (請先閲讀背面之注意事項再填寫本頁) 112251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(17) 熱容之位準。此係其中媒介之反射性於抹除部分(結晶音E 分)小於非晶形部分之媒介較佳之理由。 該無機保護層2 5另外包括介於該記錄層2 4與該金 屬層2 5 c間之第一頂介電層2 5 a ’且包括位於該金屬 層2 5 c上之第二頂介電層2 5 b。 該第一及第二頂介電層之折射率以不小於1 . 7 0爲 佳。本發明中,藉著使用具有高折射率之頂介電層’可進 一步抑制該光束之焦點(光束腰部)擴展。 該第一頂介電層2 5 a係具有提供適當之記錄靈敏度 之角色,及保護記錄層24及金屬層25 c之角色。若無 第一頂介電層2 5 a ,則記錄層於施加光束期間增加之溫 度極少,記錄靈敏度極低,而無法預防記錄層之熔化或該 層與金屬層之元素的混合。就記錄靈敏度之觀點而言,該 第一頂介電層較佳係具有低熱導係數,熱安定或於高溫下 不被破壞,係爲安定之非晶形材料。 該第一頂介電層可爲calcogenides、氮化物及氧化物 諸如 ZnS . Si〇2、ZnS、SiN、GeN、 A1 S iN、Al2〇3、Si〇2、Ta2〇5、Ti〇2 及Y 2 0 3及其組合物。此等薄層之組合物可爲理想配比 或接近理想配比。其中,以z n S · S i ◦ 2層較佳,因 爲其具.有低熱導係數及穩定之非晶狀態,無法藉由加熱輕 易結晶。頂介電層可藉著物理蒸汽沉積諸如濺鍍而形成。 該Z n S . s 1 ◦ 2層可藉著濺鍍比例約8 〇莫耳百分比 至約2 0莫耳百分比之ζ η 〇與s i 0 2混合物而形成 本紙張尺度適用中周國家檩準()M規格(210 X 297公釐) I 11 n ~~ 訂 II 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(18) 0 該第一頂介電層較佳係具有低達5瓦/ (mxK)或 更低之熱導係數,其中m係表示米,K係表示絕對溫度, 由該模擬等而間接地估計,因爲該介電層之熱導係數的直 接測量極爲困難。 由該記錄靈敏度及記錄層之保護而言,該第一頂介電 層之厚度較佳係不小於1 0毫微米’而由產能之觀點而言 ’較佳係不超過1微米。部分介電層若薄層厚度超過1微 米,則對第一頂介電層產生太高之應力,而導致該層剝離 成捲曲。 該第二頂介電層2 5 b具有防止金屬層2. 5 C腐蝕, 防止媒介表面因與光學頭接觸而受損,且防止媒介表面溫 度增加。就此觀點而言,該第二頂介電層2 5 b之厚度較 佳係不小於1 〇毫微米,更佳係不小於4 0毫微米’以得 到防止媒介表面受損之其他優點,並抑制該媒介表面之溫 度增高。抑制媒介表面溫度升高之效果亦佳’因爲其大幅 舒緩可提供於該第二頂介電層2 5 b上之潤滑層的耐熱性 需求。然而,就產能之觀點而言’該第二頂介電層2 5 b 之厚度較佳係不超過1微米。若該層之厚度超過1微米’ 則部分介電材料使第二頂介電層材料的應力太高’而使該 層剝離或捲曲。 此外,即使使用具有1 . 7 0或更高之折射率的介電 層,則該記錄層2 4與光學頭之物鏡透鏡間之距離以儘可 能地小爲佳,以達到較高之記錄密度。是故’較佳係該無 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ % _ I--------f.----Ί--、玎-------^ (請先聞讀背面之注意事項再填寫本頁) 472251 A7 B7 五、發明説明(19) 機保護層2 5之總厚度,即該第一及第二頂介電層2 5 a 及2 5 b與金屬層2 5 c之總厚度不超過1微米。 該第二頂介電層2 5 b之材料可與該第一頂介電層 2 5 a者相同。此外,該第二頂介電層直接面向飛行光學 頭及頭部滑動器接點,而可能攻擊該第二頂介電層2 5 b 。硬質介電層因此較佳係阻抗該接觸及攻擊。該種硬質第 二頂介電層可爲氮化矽或經氫化之鑽石型碳(DLC)。 (媒介之其他元素) 較佳係用以防止該頂無機層擴散於記錄層中之障壁層 1 7或2 7係夾置於該頂無機層與該記錄層之間,以使品 質穩定。而且,結晶加速層可夾置於緊鄰該記錄層而與之 接觸之處,以提供相變化型光學記錄媒介,其可使用於高 旋轉速度下。而且,根據相同理由,障壁層或結晶加速層 1 8或2 8可夾置於該底介電層1 3或2 3及該記錄層 1 4或2 4之間。 障壁層之典型實例係爲G e N層及S i N層,其中 G e / N與S i / N間之比例係爲3 / 4及接近理想配比 ,唯該分析不易。而且,亦使用添加C r之G e N層,即 GeCrN及S iAIN層。GeCrN層係藉著於Ar 與N2之混合氣體氛圍(約1 0至5 0百分比2N2)中 濺鍍1 0至3 0原子百分比之含有C r的G e合金靶極而 形成。S i A 1 N層可藉著於A r與N 2之混合氣體中濺 鍍S i A 1靶極而形成。因爲氮化物通常極致密,而耐熱 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -22 - 批衣— (請先閱讀背面之注意事項再填寫本頁)47225J A7 B7 V. Description of the invention (16) Adjusted according to the design including the increment of the drive amplifier. The new method should be compatible with the old method, so too high reflectivity should be avoided. In addition, the present invention is preferably applied to a phase-change optical recording medium, in which a medium is used in which the recording layer has a poor reflectivity between a crystalline phase and an amorphous phase to obtain a reproduced signal. However, if the metal layer is thicker than 50 nm in the phase-change optical recording medium, the difference in the reflectivity of the medium between the crystalline phase and the amorphous phase of the recording layer is small, and a superior C / N ratio cannot be obtained. This is a great disadvantage. Furthermore, in a phase-change optical recording medium in which the metal has a thickness of 20 to 50 nm, the reflectivity of the medium when the recording layer system is an amorphous phase (recording mark portion) may be higher than This is the case of the crystalline phase (the erased part). This medium is called "low-to-high structure" ("low-to-high polarity") because its reflectivity increases during recording, and it is known to reduce chatter in high-density recordings. In detail, if the phase-change optical recording medium has the characteristics of being easy to directly rewrite, it is known that if the temperature of the recording layer is between the recorded mark portion (amorphous portion) and the erased portion (crystalline portion), If they are different, the newly recorded mark portion on the previously recorded mark portion (amorphous portion) and the newly recorded mark portion on the previously erased portion (crystalline portion) have different sizes and shapes from each other. Signal quality (increased chatter). Therefore, the heat capacity required to write a new recording mark portion on the erased portion (crystalline portion.) Is higher than the new recording mark portion to be written on the amorphous portion by the melting heat of the crystalline phase. Therefore, the medium is preferably a light beam that absorbs incremental energy corresponding to the heat capacity of melting the crystalline phase, in other words, the reflectivity of the medium should be small corresponding to the aforementioned application of this paper standard. National Standard (CNS) A4 Specification (2 丨 0X297mm) -19-I ----------- install ------- order ------- line (please read the precautions on the back before filling in this Page) 112251 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (17) Heat capacity level. This is the reason that the reflectivity of the medium is better than that of the medium in the erasing part (the crystalline sound E score) is smaller than the amorphous part. The inorganic protective layer 2 5 further includes a first top dielectric layer 2 5 a ′ between the recording layer 24 and the metal layer 2 5 c and includes a second top dielectric layer on the metal layer 2 5 c. Layers 2 5 b. The refractive indices of the first and second top dielectric layers are preferably not less than 1.70. In the present invention, by using a top dielectric layer having a high refractive index ', it is possible to further suppress the focus (beam waist) of the beam from expanding. The first top dielectric layer 25a has a role of providing appropriate recording sensitivity, and a role of protecting the recording layer 24 and the metal layer 25c. Without the first top dielectric layer 25a, the temperature increase of the recording layer during the application of the light beam is extremely small, and the recording sensitivity is extremely low, which prevents the melting of the recording layer or the mixing of the elements of the layer and the metal layer. From the viewpoint of recording sensitivity, the first top dielectric layer preferably has a low thermal conductivity, is thermally stable or is not damaged at high temperatures, and is a stable amorphous material. The first top dielectric layer may be calcogenides, nitrides, and oxides such as ZnS. SiO2, ZnS, SiN, GeN, A1 SiN, Al203, Si02, Ta205, Ti〇2, and Y. 2 0 3 and combinations thereof. The composition of these thin layers can be at or near the ideal ratio. Among them, z n S · S i ◦ 2 layer is preferable, because it has a low thermal conductivity and a stable amorphous state, and cannot be easily crystallized by heating. The top dielectric layer may be formed by physical vapor deposition such as sputtering. The Z n S. S 1 ◦ 2 layer can be formed by a mixture of ζ η 〇 and si 0 2 in a sputtering ratio of about 80 mol% to about 20 mol% to form this paper. ) M size (210 X 297 mm) I 11 n ~~ Order II line (please read the precautions on the back before filling this page) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (18) 0 The first top dielectric layer preferably has a thermal conductivity as low as 5 watts / (mxK) or lower, where m is the meter and K is the absolute temperature, which is estimated indirectly from the simulation, etc., because Direct measurement of the thermal conductivity of this dielectric layer is extremely difficult. From the viewpoint of the recording sensitivity and the protection of the recording layer, the thickness of the first top dielectric layer is preferably not less than 10 nm 'and from the viewpoint of productivity, it is preferably not more than 1 m. If the thickness of a thin layer of a portion of the dielectric layer exceeds 1 micrometer, too much stress is generated on the first top dielectric layer, which causes the layer to peel off and become curled. The second top dielectric layer 2 5 b has a function of preventing the metal layer 2.5 C from being corroded, preventing the medium surface from being damaged by contact with the optical head, and preventing the medium surface temperature from increasing. From this point of view, the thickness of the second top dielectric layer 2 5 b is preferably not less than 10 nm, more preferably not less than 40 nm 'in order to obtain other advantages of preventing damage to the surface of the medium and suppressing The temperature of the surface of the medium increases. The effect of suppressing the increase in the surface temperature of the medium is also good because it greatly relieves the heat resistance requirement of the lubricant layer that can be provided on the second top dielectric layer 25b. However, from the viewpoint of productivity, the thickness of the second top dielectric layer 2 5 b is preferably not more than 1 micrometer. If the thickness of this layer exceeds 1 micron ', part of the dielectric material makes the stress of the second top dielectric layer material too high' and peels or curls the layer. In addition, even if a dielectric layer having a refractive index of 1.70 or higher is used, the distance between the recording layer 24 and the objective lens of the optical head is preferably as small as possible to achieve a higher recording density. . It is 'better' that the paper size not applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _% _ I -------- f .---- Ί--, 玎- ----- ^ (Please read the precautions on the back before filling this page) 472251 A7 B7 V. Description of the invention (19) The total thickness of the protective layer 25, that is, the first and second top dielectric layers The total thickness of 2 5 a and 2 5 b and the metal layer 2 5 c does not exceed 1 micron. The material of the second top dielectric layer 2 5 b may be the same as that of the first top dielectric layer 2 5 a. In addition, the second top dielectric layer directly faces the flying optical head and the head slider contact, and may attack the second top dielectric layer 2 5 b. The hard dielectric layer therefore preferably resists this contact and attack. This hard second top dielectric layer can be silicon nitride or hydrogenated diamond-like carbon (DLC). (Other elements of the medium) Preferably, the barrier layer 17 for preventing the top inorganic layer from diffusing into the recording layer is sandwiched between the top inorganic layer and the recording layer to stabilize the quality. Further, the crystallization accelerating layer can be sandwiched in close contact with the recording layer to provide a phase-change type optical recording medium which can be used at high rotation speeds. Further, for the same reason, the barrier layer or the crystallization accelerating layer 18 or 28 may be interposed between the bottom dielectric layer 13 or 23 and the recording layer 14 or 24. Typical examples of the barrier layer are the G e N layer and the S i N layer. The ratio between G e / N and S i / N is 3/4 and is close to the ideal ratio, but this analysis is not easy. Moreover, a C e -added G e N layer, namely a GeCrN and S iAIN layer is also used. The GeCrN layer is formed by sputtering a Ge alloy target containing Cr at a concentration of 10 to 30 atomic percent in a mixed gas atmosphere of Ar and N2 (approximately 10 to 50% 2N2). The S i A 1 N layer can be formed by sputtering a S i A 1 target in a mixed gas of Ar and N 2. Because nitrides are usually extremely dense and heat-resistant, this paper is sized for the Chinese National Standard (CNS) A4 (210X297 mm) -22-Approved — (Please read the precautions on the back before filling this page)
、1T 線 經濟部智慧財產局員工消費合作社印製 472251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(20) 性優越,故該氮化物層具有高度防止Z n S · S i 0 2之 S原子擴散效果,其一般使用於相變化型光學記錄媒介中 。當此等氮化物層與G e S b T e層——典型相變化型光 學記錄層--接觸時,該媒介之抹除靈敏度改善,而視爲 具有高結晶加速效應。雖然加速結晶之理論因素不淸楚, 但當該G e S b T e層被加熱至結晶溫度時,視爲該氮化 物層具有加速或增加結晶晶核形成之效應。 視需要,於該第二頂介電層上提供潤滑層,以舒緩因 該光學頭之接觸及攻擊所致之衝擊,先決條件爲其不損壞 該光學性質。 於磁-光學記錄媒介之磁-光學記錄層中,施加光束 ,一般爲雷射光束,以升高該記錄層之溫度,並降低該記 錄層之矯頑力,而該記錄層之加熱部分的磁動量係藉外加 磁場而反向,以進行記錄及/或抹除。該記錄層之溫度增 加至約2 0 0 °C。 於相變化型光學記錄媒介之相變化型光學記錄層中, 施加光束一——般爲雷射光束,以於該材料之非晶形與結 晶相之間變化’換言之,導致相變化’以於記錄及/或抹 除中使用相變化。該記錄層之溫度於記錄期間升高至約 6 0 0 t,而於抹除期間升高至約1 7 〇 °C。以該相變化 型光學記錄媒介爲佳’因爲該材料之成本較該磁一光學記 錄材料低’該驅動可較該磁一光學記錄便宜’因爲記錄及 抹除之機制係如同使用相變化時一般地簡易,其易於與唯 讀光碟相容。 本紙張尺度適用中.國ΐ家標準(CNS ) A4規格(2i〇x297公釐)_ 23: ----------裝----Ί--訂-------線 (請先閱讀背面之注意事項再填寫本頁) 472251 A7 B7 五、發明説明(21 ) 磁-光學記錄媒介之磁-光學記錄層係已知,可爲例 如稀土及過渡金屬合金諸如Tb F e C 〇。該相變化型光 學記錄媒介之相變化型光學記錄層係已知,可爲例如 carcohenide 合金諸如 G e S b Te 及 I n S b T e。該 記錄層之厚度不特別限制,但一般係介於1 2至3 〇毫微 米之範圍內。 本發明尤其適合應用於相變化型光學記錄媒介,因爲 該記錄層之溫度係於該相變化型光學記錄媒介(例如 6 0 〇 °C )與該磁一光學記錄媒介(例如2 0 0 °C )相比 較之下增至較高溫度,而該媒介表面較高溫度下,霧度或 髒污之問題更爲嚴重。本發明之效果更爲明顯,較有利於 在該相變化型光學記錄媒介中得到。 該反射層一般係由含有2至5百分比T i ,T a, C r ,Au等物質之A 1合金所製。或亦可使用Ag合金 或A u合金。該反射層之材料及厚度於本發明中不特別限 制。 該反射層之厚度一般係介於4 0至2 0 0毫微米之範 圍內。該底介電層可與該頂介電層相同。 該底介電層之厚度一般係介於1 5至5 0毫微米之範 圍內。 該基材於本發明中不特別限制,可爲任何已知材料, 諸如玻璃及塑料,因爲該基材與本發明中媒介之光學性質 無關。此等材料中,以聚碳酸酯爲佳,因其成本及機械性 質優越。當需要低吸水度時,以非晶形脂族聚烯烴樹脂爲 本紙張尺度適用中周國家標準(CMS ) A4規格(210X297公釐〉_ 24 - ^— (請先閱讀背面之注意事項再填寫本頁) ,ιτ 線 經濟部智慧財產局員工消費合作社印製 472251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(22) 佳。 當該基材之耐熱性低時,絕熱層可夾置於該基材與該 反射層之間。該絕熱層具有防止基材因爲該記錄層所產生 整熱而變形的效果。尤其,於其中該基材之廣泛面積一次 加熱之結晶或起始的原始熱處理步驟中,該基材可更輕易 地變形,而該絕熱層之效應於此步驟中極爲重要該絕熱層 應具有低熱導係數,且具有2毫微米或更大之厚度。 熱自經加熱之記錄層傳導之方式係如下文般地考慮。 該記錄層之熱一般係通經底介電層,沿具有高熱導係數之 A 1合金反射層擴散,而反射層之部分熱被傳導至該基材 。若該反射層之熱僅於該反射層上擴散,則不會產生基材 之溫度升高的問題。 因此,該絕熱層之熱導係數係依其與該反射層之熱導 係數的關係而決定。若該反射層之熱導係數高,則熱幾乎 不會到達該基材,而不需要該絕熱層之絕熱性。若該反射 層之熱導係數低,則該絕熱層之熱導係數應夠低。該絕熱 層之熱導係數不大於該反射層之熱導係數的約十分之一。 若該絕熱層之厚度太薄,則無法達到絕熱層之效果,而應 不小於2毫微米。 該絕熱層之材料可爲頂介電層所描述之任何一種材料 ,包括c a 1 c 〇 g e n i d e、氮化物及氧化物,諸如 ZnS.Si〇2、ZnS、SiN、GeN、 AlSiN'Al2〇3' Si〇2'Ta2〇5'Ti〇2 及Y 2 Ο 3及其組合物。 本紙張尺度適财顚家標準(CNS ) Α4規格_( 210X297公釐)-25 - ----------#^1----Ί--1T------^ (請先閱讀背面之注意事項再填寫本頁) 472251 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明(23) 該絕熱層之熱導係數以與頂介電層或第—頂介電層相 同爲佳。視爲約5瓦/ ( m X K )。 當本發明媒介使用於光學頭系統——其中該媒介與該 光學頭系統中之物鏡透鏡係小達約i . 〇微米或更小一一 時’該光學記錄媒介特佳。該光學頭系統之典型實例係爲 飛行光學頭。該飛行光學頭中,該媒介與該光學頭系統之 物鏡透鏡間的距離極小,而該物鏡透鏡因蒸發物質而霧化 之情況極爲明顯。該飛行光學頭係出示於圖2中。該飛點 式頭因爲該媒介旋轉而於距離該媒介表面特定距離下於氣 流上飛過。詳同之’由板式彈簧結構支撐之滑動器--稱 爲平衡環 支撐物鏡透鏡,因該媒介旋轉而於距離該媒 介表面特定距離下藉氣流飛過。 實施例 (實施例1至4及對照例1至3 ) 製造具有圖4之結構的相變化型光學記錄媒介(不形 成該障壁層或結晶加速層17及18)。詳言之,該媒介 係包括基材1 1、絕熱層1 6、反射層1 2、底介電層 1 3、記錄層1 4、第一頂介電層1 5 a及第二頂介電層 1 5 b。改變該第一頂介電層1 5 a之厚度。所製得之相 變化型光學記錄媒介進行評估。 所使用之基材具有厚度爲1 . 2毫米而直徑爲1 2〇 毫米之聚碳酸酯塑料基材及內徑1 5毫米而具有以下形式 之孔洞。該基材1 1具有藉注模形成而由半徑2 5毫米至 ^^5"用中國國家標準( CNS ) A4规格(210 X 297公^~~-26- J —訂 I I I I I 線 (請先閱讀背面之注意事項再填寫本頁) 472251 A7 B7 五、發明説明(24) 半徑5 8毫米之V形螺旋凹槽,以供作連續伺服使用。該 凹槽具有9 0毫微米之深度,底部寬度0 1 2微米,軌 (請先閲讀背面之注意事項再填寫本頁〕 距〇 . 7微米。而記錄係於該陸塊上進行。 於前述基材上形成以下薄層,以得到相變化型光學記 錄媒介,其中光束係自其層側施加。該絕熱層1 6、該底 介電層1 3及該第一頂介電層1 5 a係爲藉著濺鍍莫耳比 爲80 : 20之ZnS及Si〇2靶極而得之2113_ S i 0 2層。絕熱層1 6之厚度係爲8 0毫微米,底介電 層1 3者係爲1 8毫微米,而第一頂介電層1 5 a者係列 示於表2。該Z n S _ S i 0 2層之折射率係約2 . 1 8 〇 該記錄層1 4係爲藉著濺鍍G e : S b : T e原子比 爲2:2:5之〇6313丁6合金靶極而沉積之 〇6 31)丁6合金層,厚度爲2 2毫微米。該反射層12 係爲濺鍍A 1 : C r原子比爲9 7 : 3之A 1 C r靶極所 沉積之AlCr合金層,厚度爲150毫微米。 經濟部智慧財產局員工消費合作社印製 該第二頂介電層1 5 b係爲藉著於A 1:與1^2之混合 氣體中濺鍍S i靶極所得之S i N層。該S i N層之原子 比係視爲接近3 : 4之理想配比,但難以實際分析。該第 二頂介電層1 5 b具有2 . 0 8之折射率及1 2 0毫微米 之厚度。 前述無機層係藉磁濺銨而沉積於該基材1 1上。所用 之裝置係爲連線濺鍍裝置(I L C 3 1 0 2型,ANELVA Corp.製造)’其中靶極具有8英吋直徑,而自身旋轉, 本紙張尺度適用中國國家標隼(CNS〉A4規格(210X297公釐〉 -27- 472251 A7 B7 五、發明説明(25) 亦沿著具有特定半徑之軸循環。所沉積之層的厚度係藉沉 積時間控制。 表2係列示實施例1至4及對照例1至3中頂介電層 之厚度,其中改變該第一頂介電層之厚度。表2亦列示媒 介於結晶之原始熱處理之後的折射率,及頂介電層整體所 屬之尖峰區的序數。該尖峰區係於與該干擾尖峰形成關係 之前定義。 ----------裝-- (請先閱讀背面之注意事項再填寫本頁} 、νβ_ 經濟部智慧財產局S工消費合作社印製 本紙張尺度適用中周國家標準(CNS ) Α4规格(210X297公釐)_ 28 - 5 2 2 7 41. Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs of the 1T line. 472251 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 B7. 5. Description of the invention (20) Excellent properties, so the nitride layer has a high degree of protection against Z n S · S i The S atom diffusion effect of 0 2 is generally used in a phase-change type optical recording medium. When these nitride layers are in contact with the GeSbTe layer, a typical phase change optical recording layer, the erasing sensitivity of the medium is improved, and it is considered to have a high crystallization acceleration effect. Although the theoretical factors for accelerating crystallization are not negligible, when the GeSbTe layer is heated to the crystallization temperature, it is considered that the nitride layer has the effect of accelerating or increasing the formation of crystal nuclei. If necessary, a lubricating layer is provided on the second top dielectric layer to alleviate the impact caused by the contact and attack of the optical head, and the prerequisite is that it does not damage the optical properties. In a magneto-optical recording layer of a magneto-optical recording medium, a light beam, generally a laser beam, is applied to raise the temperature of the recording layer and reduce the coercive force of the recording layer. Magnetic momentum is reversed by applying a magnetic field for recording and / or erasing. The temperature of the recording layer increased to about 200 ° C. In a phase-change optical recording layer of a phase-change optical recording medium, a light beam, generally a laser beam, is applied to change between the amorphous and crystalline phases of the material, in other words, to cause a phase change, for recording. And / or erasing using phase changes. The temperature of the recording layer rose to about 600 t during the recording period, and rose to about 170 ° C during the erasing period. It is better to use the phase-change optical recording medium 'because the cost of the material is lower than the magnetic-optical recording material' the drive can be cheaper than the magnetic-optical recording 'because the mechanism of recording and erasing is the same as when using phase change The floor is simple and easily compatible with read-only discs. The paper size is applicable. National Standard (CNS) A4 (2i0x297 mm) _ 23: ---------- installation ---- Ί--order ------ -Line (please read the notes on the back before filling this page) 472251 A7 B7 V. Description of the invention (21) The magneto-optical recording layer of the magneto-optical recording medium is known and can be, for example, rare earth and transition metal alloys such as Tb F e C 0. The phase-change optical recording layer of the phase-change optical recording medium is known, and may be, for example, carcohenide alloys such as GeSbTe and InSbTe. The thickness of the recording layer is not particularly limited, but generally ranges from 12 to 30 nanometers. The present invention is particularly suitable for a phase-change optical recording medium, because the temperature of the recording layer is between the phase-change optical recording medium (for example, 600 ° C) and the magnetic-optical recording medium (for example, 200 ° C). ) Compared to the higher temperature, and the higher the surface temperature of the medium, the more serious the problem of haze or dirt. The effect of the present invention is more obvious, and it is more advantageous to obtain in the phase-change type optical recording medium. The reflective layer is generally made of an A 1 alloy containing 2 to 5 percent of T i, Ta, C r, Au, and the like. Alternatively, an Ag alloy or an Au alloy may be used. The material and thickness of the reflective layer are not particularly limited in the present invention. The thickness of the reflective layer is generally in the range of 40 to 200 nanometers. The bottom dielectric layer may be the same as the top dielectric layer. The thickness of the bottom dielectric layer is generally in the range of 15 to 50 nm. The substrate is not particularly limited in the present invention, and may be any known material, such as glass and plastic, because the substrate has nothing to do with the optical properties of the medium in the present invention. Among these materials, polycarbonate is preferred because of its cost and mechanical properties. When low water absorption is required, the amorphous aliphatic polyolefin resin is used as the paper standard. Applicable to the national standard (CMS) A4 specification (210X297 mm) _ 24-^ — (Please read the precautions on the back before filling in this Page), printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative Cooperative 472251 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the Consumer Cooperative Cooperative A7 B7 V. Invention Description (22) Good. When the heat resistance of the substrate is low, the insulation layer may It is sandwiched between the substrate and the reflective layer. The heat-insulating layer has the effect of preventing the substrate from being deformed due to the entire heat generated by the recording layer. In particular, the crystallization or initiation of a wide area of the substrate which is heated once In the original heat treatment step, the substrate can be deformed more easily, and the effect of the heat insulation layer is very important in this step. The heat insulation layer should have a low thermal conductivity and a thickness of 2 nm or more. The manner in which the heated recording layer conducts is considered as follows. The heat of the recording layer generally passes through the bottom dielectric layer and diffuses along the A 1 alloy reflective layer with a high thermal conductivity, and part of the reflective layer is thermally It is conducted to the substrate. If the heat of the reflective layer is diffused only on the reflective layer, the temperature of the substrate will not rise. Therefore, the thermal conductivity of the heat insulating layer depends on the reflective layer. The thermal conductivity of the reflective layer is determined. If the thermal conductivity of the reflective layer is high, heat will hardly reach the substrate without the thermal insulation of the thermal insulation layer. If the thermal conductivity of the reflective layer is low, The thermal conductivity of the thermal insulation layer should be low enough. The thermal conductivity of the thermal insulation layer is not greater than about one tenth of the thermal conductivity of the reflective layer. If the thickness of the thermal insulation layer is too thin, the effect of the thermal insulation layer cannot be achieved It should be no less than 2 nm. The material of the thermal insulation layer can be any of the materials described in the top dielectric layer, including ca 1 c genide, nitrides and oxides, such as ZnS.Si〇2, ZnS, SiN , GeN, AlSiN'Al2〇3 'Si〇2'Ta2055'Ti〇2 and Y 2 0 3 and the combination thereof. The paper size is suitable for financial standards (CNS) A4 specifications_ (210X297 mm)- 25----------- # ^ 1 ---- Ί--1T ------ ^ (Please read the notes on the back before filling this page) 472251 Printed by the Consumers' Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs A7 B7 V. Invention Description (23) The thermal conductivity of this insulation layer is preferably the same as that of the top dielectric layer or the first top dielectric layer. It is regarded as about 5 watts / ( m XK). When the medium of the present invention is used in an optical head system-wherein the medium and the objective lens system in the optical head system are as small as about 1.0 micron or smaller-the optical recording medium is particularly good. The A typical example of an optical head system is a flying optical head. In the flying optical head, the distance between the medium and the objective lens of the optical head system is extremely small, and the situation where the objective lens is atomized due to the evaporation substance is extremely obvious. The flying optical head is shown in FIG. 2. The flying spot head flies over the air flow at a specific distance from the surface of the medium because the medium rotates. The details are the same as the slider supported by the leaf spring structure, which is called the balance ring supporting objective lens, and because the medium rotates, it passes by the air current at a certain distance from the surface of the medium. Examples (Examples 1 to 4 and Comparative Examples 1 to 3) Phase-change optical recording media having the structure of Fig. 4 (the barrier layer or the crystallization accelerating layers 17 and 18 were not formed) were manufactured. In detail, the media system includes a substrate 11, a thermal insulation layer 16, a reflective layer 1 2, a bottom dielectric layer 1 3, a recording layer 1 4, a first top dielectric layer 15 a and a second top dielectric. Layer 1 5 b. The thickness of the first top dielectric layer 15a is changed. The prepared phase-change optical recording medium was evaluated. The substrate used has a polycarbonate plastic substrate with a thickness of 1.2 mm and a diameter of 120 mm, and an inner diameter of 15 mm, which has the following forms of holes. The substrate 11 is formed by injection molding and has a radius of 25 mm to ^^ 5 " using China National Standard (CNS) A4 specifications (210 X 297 mm ^ ~~ -26- J — order IIIII line (please read first Note on the back, please fill in this page again) 472251 A7 B7 V. Description of the invention (24) V-shaped spiral groove with a radius of 58 mm for continuous servo use. The groove has a depth of 90 nm and a bottom width 0 1 2 μm, rail (please read the precautions on the back before filling this page) distance 0.7 μm. Recording is performed on this land block. The following thin layer was formed on the aforementioned substrate to obtain a phase change An optical recording medium in which a light beam is applied from its layer side. The thermal insulation layer 16, the bottom dielectric layer 13, and the first top dielectric layer 15 a are based on a molar ratio of 80:20 by sputtering. The 2113_S i 0 2 layer obtained from the ZnS and Si〇2 targets. The thickness of the thermal insulation layer 16 is 80 nm, the bottom dielectric layer 13 is 18 nm, and the first top dielectric The series of the electric layer 15a is shown in Table 2. The refractive index of the ZnS_Si02 layer is about 2.18. The recording layer 14 is formed by sputtering Ge: Sb: T. e atomic ratio is 2 : 2:63 of 6313 butan 6 alloy target deposited 31) butan 6 alloy layer, the thickness is 22 nm. The reflective layer 12 is sputtered A 1: C r atomic ratio is 9 7: The thickness of the AlCr alloy layer deposited on the A 1 C r target of 3 is 150 nanometers. The second top dielectric layer 1 5 b is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A Si N layer obtained by sputtering a Si target in a mixed gas of 1 ^ 2. The atomic ratio of the Si N layer is regarded as an ideal ratio close to 3: 4, but it is difficult to analyze it practically. The second top medium The electric layer 15 b has a refractive index of 2.08 and a thickness of 120 nm. The aforementioned inorganic layer is deposited on the substrate 11 by magnetic sputtering of ammonium. The device used is a wire sputtering device (ILC 3 102 type, manufactured by ANELVA Corp.) where the target has a diameter of 8 inches and rotates by itself. This paper size applies to the Chinese national standard (CNS> A4 size (210X297 mm> -27- 472251 A7) B7 V. Description of the invention (25) It also circulates along the axis with a specific radius. The thickness of the deposited layer is controlled by the deposition time. Table 2 shows a series of Examples 1 to 4 and Comparative Examples 1 to The thickness of the top dielectric layer in 3, wherein the thickness of the first top dielectric layer is changed. Table 2 also shows the refractive index of the medium after the initial heat treatment of the crystal, and the ordinal number of the peak region to which the top dielectric layer belongs as a whole. The spike region is defined before forming a relationship with the interference spike. ---------- Installation-(Please read the precautions on the back before filling out this page}, νβ_ Printed on paper by S Industrial Consumer Cooperatives, Ministry of Economic Affairs, Intellectual Property, Standards applicable to Central China Standards (CNS) Α4 size (210X297 mm) _ 28-5 2 2 7 4
7 B 五、發明説明(26) 表2 經濟部智慧財產局員工消費合作社印製 試樣 層厚 尖峰區 媒介於 編號 第一頂 第二頂 頂介電 之序號 波長6 8 5 介電層 介電層 層之總 毫微米 (毫微米) (毫微米) 厚度(毫 下之反 微米) 射性 實施例 155 120 275 第二 32 1 實施例 205 120 325 第二 38 2 實施例 325 120 445 第二 36 3 實施例 485 120 605 第四 37 4 對照例 1 15 120 135 第一 38 丄 對照例 45 120 165 第一 42 Z 對照例 3 75 120 195 第一 25 先前製造之相變化型光學記錄媒介係於具有波長 6 8 5毫微米之雷射二極體之飛行光學頭之機器中進行評 —. 裝 ; 訂 線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 20 _ 經濟部智慧財產局員工消費合作杜印製 472251 A7 B7 五、發明説明(27) 估。因爲難以直接測量髒污或霧化,故觀察施加雷射光束 時的追蹤誤差信號,以評估該物鏡透鏡之髒污度或霧度。 飛行光學頭係爲前述出示於圖1之滑動器型,其中物鏡透 鏡係裝置於一滑動器上,而該頭係控制於飛行,物鏡透鏡 與該媒介表面相距0 . 3 8微米。該追蹤控制係藉著使用 雙分式(雙垂)光檢波器且使用推-拉信號或該雙分式回 轉光間之差値偵測該回轉光而進行,稱爲追蹤誤差信號( 以下稱爲” T E S ” )。該媒介之旋轉速率固定,8米/ 秒。下文描述特定之評估方法。 記錄媒介試樣於結晶之原始熱處理之後於該評估裝置 中設定。具有.1 . 2毫瓦能量之複製光束重複.施加於相同 軌道,以測量用以評估該T E S亂度之參考振幅的跳動信 .號。藉重複施加光束進行之複製係處於抹除部分中之靜止 模式下。因爲該軌道係螺旋形,故該光束需每次旋轉皆需 移動或跳過一軌距,其係稱爲”軌道跳動”。若重複複製 係爲正常靜止模式,則其一旋轉期間之T E S係接近零, 其中該光束係指向該軌道之中心,不同處係當每一次旋轉 發生一次軌道跳動時,發現正弦波型之大量輸出(稱爲” 跳動振幅”)。 該TE S之亂度通常係藉著一次轉動中之最大振幅的 百分比振幅而評估,不同處係於軌道跳動時,與跳動振幅 有關。當具有0 . 7微米軌距之媒介中容許之偏離軌道寬 度係爲0 . 0 5微米時,該亂度應不大於4 3百分比。雖 然所容許之偏離軌道寬度並非固定,但其係基於習用光學 本紙張尺度適用中國國家標準(CNS ) A4规格(210 X 297公釐> _ 3〇 _ 11 11 „ 訂·~ n 線 (請先閱讀背面之注意事項再填寫本頁) 472251 A7 B7 五、發明説明(28) 記錄媒介之一般需求而選擇於4 3百分比,其中自該基材 側施加光束。若該亂度係大於此評估參考値之4 3百分比 ’則光束通過超出軌道中心之容許範圍外的點或線。若亂 度太大,則光束不停留於該軌道上,即,軌道控制變成不 可能。 實施例1至4及對照例1至3之所有試樣中,若僅進 行前述複製,則可進行正常軌道控制,而一次旋轉中之 T E S亂度最多不大於2 0百分比,表示該媒介係正常。 測量該試樣之跳動振幅。 其次,藉該試樣之試驗而進行髒污或霧度之評估。評 估中,對應於記錄光束之強光束(以下稱爲”評估雷射能 量”)施加於該試樣歷經約1次旋轉之時間,於靜止模式 下施加前述能量1 . 2毫瓦之複製光束時,測量以下 T E S亂度以供評估。 經濟部智慧財產局員工消費合作社印製 本發明中,使用強雷射能量以供記錄及抹除,因爲該 記錄層之高溫係必要。於試驗之試樣中,需要約4毫瓦之 雷射能量以抹除所記錄之標記,需約7 . 8毫瓦之雷射尖 峰能量以供記錄。 試驗中,施加強評估雷射能量於試樣歷經約1次旋轉 之時間,於靜止模式施加前述能量爲1 . 2毫瓦之複製光 束期間,測量以下T E S亂度以供評估。此評估中,該試 樣當然應至少通過在施加對應於抹除能量之約4毫瓦雷射 能量後之T E S亂度不大於前述參考値之4 3百分比的標 準。然而,實際上,若施加約6毫瓦之雷射能量或低於記 本紙張尺度適用中.國國家標準(CNS ) A4規格(210X297公釐) _ 31 . ~~~' 4722517 B V. Description of the invention (26) Table 2 Printed sample layer thickness peak area medium number printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Number of the first top second top dielectric Dielectric Wavelength 6 8 5 Dielectric layer dielectric Layers of total nanometers (nm) (nm) Thickness (inverse micrometers below) Emissivity Example 155 120 275 Second 32 1 Example 205 120 325 Second 38 2 Example 325 120 445 Second 36 3 Example 485 120 605 Fourth 37 4 Comparative Example 1 15 120 135 First 38 丄 Comparative Example 45 120 165 First 42 Z Comparative Example 3 75 120 195 First 25 The phase change type optical recording medium previously manufactured was Evaluation in a machine with a laser diode flying laser head with a wavelength of 6 8 5 nanometers—installation; ordering (please read the precautions on the back before filling this page) This paper size applies to Chinese National Standards (CNS) A4 specifications (210X297mm) _ 20 _ Consumer cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs Du printed 472251 A7 B7 V. Description of invention (27) Estimate. Because it is difficult to directly measure the dirt or haze, the tracking error signal when the laser beam is applied is evaluated to evaluate the dirt or haze of the objective lens. The flying optical head is the slider type shown in FIG. 1 above, in which the objective lens is mounted on a slider, and the head is controlled for flight, and the objective lens is 0.38 micrometers away from the surface of the medium. This tracking control is performed by using a bi-partition (dual-vertical) optical detector and detecting the turning light using a push-pull signal or the difference between the bi-parting rotating light, which is called a tracking error signal (hereinafter referred to as For "TES"). The rotation rate of the medium is fixed, 8 m / s. Specific evaluation methods are described below. The recording medium sample was set in the evaluation device after the initial heat treatment of the crystals. A duplicated beam with an energy of 1.2 milliwatts was repeatedly applied to the same orbit to measure the beating signal of the reference amplitude used to evaluate the T ES disorder. The reproduction by repeatedly applying the light beam is in a stationary mode in the erasing portion. Because the orbit is spiral, the beam needs to be moved or skipped by one gauge each time it is rotated, which is called "orbital jump". If the repetitive replication system is a normal stationary mode, the TES during a rotation is close to zero, where the beam is directed to the center of the orbit, and different places are when a large number of sine wave outputs are found for each orbital rotation (Called the "beat amplitude"). The turbulence of the TE S is usually evaluated by the percentage amplitude of the maximum amplitude in one rotation. The difference is related to the jump amplitude when the orbit jumps. When the allowable deviation from orbital width in a medium with a track pitch of 0.7 microns is 0.05 microns, the disorder should not be greater than 43 percent. Although the permissible deviation from the track width is not fixed, it is based on the standard of conventional optics. This paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). _ 3〇_ 11 11 (Please read the notes on the back before filling this page) 472251 A7 B7 V. Description of the invention (28) The general requirements of the recording medium are selected at 4 3%, where the beam is applied from the substrate side. If the disorder is greater than this evaluation With reference to “4 3%”, the beam passes through a point or line outside the allowable range of the center of the track. If the disorder is too large, the beam does not stay on the track, that is, track control becomes impossible. Embodiments 1 to 4 Of all the samples of Comparative Examples 1 to 3, if only the aforementioned copying is performed, normal orbit control can be performed, and the TES disorder in one rotation is not more than 20% at most, indicating that the medium is normal. The runout amplitude. Second, the test of the sample is used to evaluate the dirt or haze. In the evaluation, a strong beam corresponding to the recording beam (hereinafter referred to as "evaluation laser energy") is applied to the sample. After approximately 1 rotation, when the duplicate energy beam of 1.2 milliwatts of energy described above is applied in the stationary mode, the following TES disturbances are measured for evaluation. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Laser energy for recording and erasing, because the high temperature of the recording layer is necessary. In the test sample, laser energy of about 4 milliwatts is required to erase the recorded mark, which is about 7.8 milliwatts. The peak energy of the laser is recorded. During the test, a strong evaluation of the laser energy was applied to the sample after about 1 rotation, and the stationary beam was applied with the aforementioned energy of 1.2 milliwatts of the replication beam. For this evaluation, of course, the sample should pass at least a standard of TES disturbance not greater than 43% of the aforementioned reference value after applying a laser energy of about 4 milliwatts corresponding to the erasing energy. In fact, if the laser energy of about 6 milliwatts is applied or it is lower than the paper size of the notebook, the national standard (CNS) A4 specification (210X297 mm) _ 31. ~~~ '472251
7 B 五、發明説明(29) 錄光束之尖峰能量約7 . 8毫瓦後的T E S亂度不大於前 述參考値之4 3百分比,則此試驗中,施加連續光束(具 有固定強度之D C雷射光束)時,媒介之溫度因此變成高 於實際施加評估能量之脈衝光束的情況。後一種事實或臨 界値係於複製1 - 7經修飾任意數據的個別實驗中確定。 因此,當T E S之亂度變成4 3百分比之容限時,決定每 個試樣之評估雷射能量。通過此參考値之試樣可令人滿意 ,可毫無問題地實際使用,如前文所述。結果列示於表3 中〇 表3 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 頂介電層之 總厚度 (毫微米) 尖峰區域之 正常編號 於T E S亂度限 制下之評估雷射 能量(毫瓦) 實施例1 2 7 5 第二尖峰 6 .〇 實施例2 3 7 5 第二尖峰 6.4 實施例3 4 4 5 第三尖峰 7.1 實施例4 6 0 5 第四尖峰 7.8 對照例1 13 5 第一尖峰 3.8 對照例2 16 5 第一尖峰 4 . 3 對照例3 19 5 第一尖峰 5.2 如表3所示’對照例1中之評估雷射能量低-- 、-=β Γ— Μ 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 472251 A7 B7 五、發明説明(30) 3 . 8毫瓦,而施加6毫瓦之評估參考値時,無法控制追 蹤,換言之,T E S之亂度超過評估限度,而飛行光學頭 無法保持於預定軌道上。 爲了發現前述問題之原因,於試驗之前及之後重複觀 察記錄媒介及光學頭。結果,於媒介中或媒介表面上皆未 發現問題,已發現液滴係黏附於該物鏡透鏡之表面上,面 向該媒介。進行Raman分析及紅外光吸光度分析,以發 現摻有少量烴類之主要水分。該烴類係存在極少量,而無 法確認,然而,認爲油成分通常係存在於空氣中。對照例 1中,即使是2 . 5毫瓦評估能量仍觀察TES之亂度。 當評估之能量逐漸升高時,該T E S之亂度逐漸增高而超 過 3 . 8毫瓦評估能量之4 3百分比。 由表3已知於實施例1至4中,T E S之亂度係介於 4 3百分比之極限內,即使於6毫瓦評估參考能量下亦然 ,表示該媒介實際係爲可用之媒介。相反地,對照例1至 3中,於低於6毫瓦之參考能量下,TE S之亂度超過極 限4 3百分比,顯示該媒介不能穩定地記錄。 (實施例5至1 9及對照例4至7 ) 製造具有圖5結構之相變化型光學記錄媒介(不形成 該障壁層或結晶加速度27及28)。詳言之,該媒介係 包括基材2 1、絕熱層2 6、反射層2 2、底介電層2 3 、記錄層4、第一頂介電層2 5 a、金屬層2 5 c及第 本紙張尺度適用中周國家標準(CNS ) A4規格(210X297公釐)_ 33 _ J------$-- (請先閲讀背面之注意事項再填寫本頁) 、τ 經濟部智慧財產局5®工消費合作社印製 472251 Α7 Β7 五、發明説明(31) —頂介電層2 5 b。改變該第一頂介電層2 5 a之厚度。 實施例5至1 9中,所使用之金屬層係爲含有5重量百分 比之C u的A g C u層。對照例4至7中,製造不具有金 屬層之媒介(對照例4及5 )及具有厚度5 5毫微米之厚 AgCu金屬層之媒介(對照例6及7)。 所用之基材2 1係爲與實施例1相同之聚碳酸酯塑料 基材。 於前述基材上,形成個別薄層,以得到相變化型光學 記錄媒介,其中光束係使其層側施加。絕熱層2 6、底介 電層2 3及第一頂介電層2 5 a係爲藉著濺鍍莫耳百分比 爲8〇 : 2 ◦之ZnS與Si〇2之祀極所得之ZnS — s i 〇2層。該絕熱層2 6之厚度係爲8 0毫微米,而底 介電層2 3者係爲1 8毫微米。而該第一頂介電層2 5 a 之厚度係爲三種類型中之一,即4 0毫微米(實施例5及 6和對照例4 ) 、8 0毫微米(實施例7至1 0和對照例 5及6 )及1 2 0毫微米(實施例1 1至1 9和對照例7 )’如表3所示。該Z n S - S i 0 2層之折射率係約 2.18° 該記錄層2 4及反射層2 2係與實施例1相同。即, 記錄層2 4係爲藉濺鍍原子比爲2 : 2 : 5之 G e_S b T e合金靶極而厚度爲2 2毫微米以沉積之 G e S b T e合金層。該反射層2 2係爲藉著濺鍍原子比 A1 : Cr爲97 : 3之AlCr合金靶極而沉積之 AlCr合金層,厚度爲150毫微米。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐)· 34 - (請先閲讀背面之注意事項再填寫本頁) 、-口7 B V. Description of the invention (29) The peak energy of the recorded beam is about 7.8 milliwatts, and the TES irregularity is not greater than 43% of the aforementioned reference. In this test, a continuous beam (DC lightning with a fixed intensity) is applied. (Beam), the temperature of the medium thus becomes higher than that of the pulsed beam where the evaluation energy is actually applied. The latter fact or boundary is determined in individual experiments that replicate 1 to 7 modified arbitrary data. Therefore, when the turbulence of T E S becomes a tolerance of 43%, the estimated laser energy of each sample is determined. The sample through this reference is satisfactory and can be used without any problems, as described above. The results are shown in Table 3. Table 3 (Please read the notes on the back before filling out this page) The total thickness of the top dielectric layer (nm) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Evaluation of laser energy (milliwatts) under TES irregularity Example 1 2 7 5 Second spike 6.0.0 Example 2 3 7 5 Second spike 6.4 Example 3 4 4 5 Third spike 7.1 Example 4 6 0 5 Fourth peak 7.8 Comparative example 1 13 5 First peak 3.8 Comparative example 2 16 5 First peak 4.3. Comparative example 3 19 5 First peak 5.2 As shown in Table 3 'Evaluated laser energy in Comparative Example 1 Low-、-= β Γ- Μ This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 472251 A7 B7 V. Description of the invention (30) 3.8 milliwatts, and an evaluation of 6 milliwatts is applied At the time of reference, the tracking cannot be controlled. In other words, the TES's degree of disturbance exceeds the evaluation limit, and the flying optical head cannot keep on the predetermined orbit. In order to find the cause of the foregoing problems, the recording medium and the optical head were repeatedly inspected before and after the test. As a result, no problem was found in the medium or on the surface of the medium, and it was found that the droplets adhered to the surface of the objective lens and faced the medium. Raman analysis and infrared light absorbance analysis were performed to find the main moisture with a small amount of hydrocarbons. This hydrocarbon system is present in a very small amount and cannot be confirmed, however, it is considered that the oil component is usually present in the air. In Comparative Example 1, the disorder of TES was observed even when the energy was evaluated at 2.5 mW. When the evaluated energy gradually increases, the turbulence of the T E S gradually increases and exceeds 43% of the estimated energy of 3.8 milliwatts. It is known from Table 3 that in Examples 1 to 4, the turbulence of T E S is within the limit of 43 percent, even under the reference energy of 6 milliwatts, indicating that the medium is actually a usable medium. In contrast, in Comparative Examples 1 to 3, at a reference energy of less than 6 mW, the turbulence of TE S exceeded the limit of 43%, indicating that the medium could not be stably recorded. (Examples 5 to 19 and Comparative Examples 4 to 7) Phase-change optical recording media having the structure shown in Fig. 5 (without the formation of the barrier layer or crystal accelerations 27 and 28) were manufactured. In detail, the media system includes a substrate 21, a thermal insulation layer 2, a reflective layer 2, a bottom dielectric layer 2 3, a recording layer 4, a first top dielectric layer 2 5a, a metal layer 2 5c, and This paper size applies the Mid-week National Standard (CNS) A4 specification (210X297 mm) _ 33 _ J ------ $-(Please read the precautions on the back before filling this page), τ Wisdom of the Ministry of Economic Affairs Printed by the Property Bureau 5® Industrial and Consumer Cooperatives 472251 Α7 Β7 V. Description of the Invention (31) — Top dielectric layer 2 5 b. The thickness of the first top dielectric layer 25a is changed. In Examples 5 to 19, the metal layer used was an AgCu layer containing 5% by weight of Cu. In Comparative Examples 4 to 7, a medium having no metal layer (Comparative Examples 4 and 5) and a medium having a thick AgCu metal layer having a thickness of 55 nm (Comparative Examples 6 and 7) were manufactured. The substrate 21 used was the same polycarbonate plastic substrate as in Example 1. An individual thin layer is formed on the aforementioned substrate to obtain a phase-change optical recording medium in which a light beam is applied on its layer side. The heat-insulating layer 26, the bottom dielectric layer 23, and the first top dielectric layer 25a are ZnS — si obtained by sputtering ZnS and Si0 2 as the target electrodes. 〇2 layer. The thickness of the heat insulating layer 26 is 80 nm, and the thickness of the bottom dielectric layer 23 is 18 nm. The thickness of the first top dielectric layer 25a is one of three types, that is, 40nm (Examples 5 and 6 and Comparative Example 4), and 80nm (Examples 7 to 10). And Comparative Examples 5 and 6) and 120 nm (Examples 11 to 19 and Comparative Example 7) 'are shown in Table 3. The refractive index of the Z n S-S i 0 2 layer is about 2.18 °. The recording layer 24 and the reflective layer 22 are the same as those in the first embodiment. That is, the recording layer 24 is a GeSbTe alloy layer deposited by sputtering a Ge_SbTe alloy target having an atomic ratio of 2: 2: 5 and a thickness of 22nm. The reflective layer 22 is an AlCr alloy layer deposited by sputtering an AlCr alloy target having an atomic ratio A1: Cr of 97: 3, and has a thickness of 150 nm. This paper size applies to Chinese National Standard (CNS) A4 specification (210X297 mm) · 34-(Please read the precautions on the back before filling this page), -mouth
T 經濟部智慧財產局員工消費合作社印製 4722.^1 A7 B7 五、發明説明(32) 第二頂介電層2 5 b係爲藉著於A r與n2之混合氣 體中沉積S i靶極所得之S i N層。該S i N層之原子比 被視爲接近理想配比3 : 4,但難以實際分析。該第二頂 介電層2 5 b係具有2 . 0 8折射率,而第二頂介電層 2 5 b之厚度係於4 2毫微米至2 2 5毫微米範圍內變化 ,如表4所示。 該金屬層25c係爲藉濺鍍重量比爲95:5之Ag 對C u之A g C u靶極所得之A g C u層。該金屬層 2 5 c之厚度係於5毫微米至5 0毫微米範圍內(實施例 5至1 9 )及5 5毫微米(對照例6及7 )變化。 (對照例6及7 ) 前述無機層係藉與實施例1相同之磁一濺鍍方法沉積 於基材2 1上。於連線之濺鍍裝置(ANELVA Corp.製造 之I L C 3 1 0 2型)中設定八份基材同時於該八份基材 上沉積相同薄層。所沉積之薄層的厚度係藉濺鍍之時間周 期控制。 表4係列示第一介電層2 5 a、金屬層2 5 c及第二 介電層2 5 b於實施例5至1 9及對照例4至7之厚度。 表4亦列示具有非晶形記錄層於濺鍍後之即時反射性、具 有結晶記錄層之媒介於結晶之原始加熱處理後的反射性、 及前兩反射性之差値。評估結果亦列示於表4中。該媒介 --其中前兩反射性之差値於表4中係爲負値一一係爲所 謂”低至高結構(低至高極性)”媒介,其中具有非晶形 (請先閱讀背面之注意事項再填寫本頁) 、-1·T Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4722. ^ 1 A7 B7 V. Description of the invention (32) The second top dielectric layer 2 5 b is for depositing the Si target in a mixed gas of Ar and n2 The S i N layer obtained. The atomic ratio of the SiN layer is considered to be close to the ideal ratio of 3: 4, but it is difficult to analyze practically. The second top dielectric layer 2 5 b has a refractive index of 2.08, and the thickness of the second top dielectric layer 2 5 b ranges from 42 nm to 25 nm, as shown in Table 4. As shown. The metal layer 25c is an AgCu layer obtained by sputtering a Ag to Cu AgCu target with a weight ratio of 95: 5. The thickness of the metal layer 25 c varies between 5 nm and 50 nm (Examples 5 to 19) and 55 nm (Comparative Examples 6 and 7). (Comparative Examples 6 and 7) The aforementioned inorganic layer was deposited on the substrate 21 by the same magnetic sputtering method as in Example 1. Eight parts of the substrate were set in a sputter apparatus (I L C 3 102 type, manufactured by ANELVA Corp.) on the line, and the same thin layer was deposited on the eight parts of the substrate. The thickness of the deposited thin layer is controlled by the time period of sputtering. Table 4 series show the thicknesses of the first dielectric layer 2 5 a, the metal layer 2 5 c, and the second dielectric layer 2 5 b in Examples 5 to 19 and Comparative Examples 4 to 7. Table 4 also shows the instantaneous reflectivity of the amorphous recording layer after sputtering, the reflectivity of the medium with the crystalline recording layer after the original heat treatment of the crystal, and the difference between the first two reflectivities. The evaluation results are also shown in Table 4. This medium, where the difference between the first two reflectances is negative in Table 4, is a so-called "low to high structure (low to high polarity)" medium, which has an amorphous shape (please read the precautions on the back before (Fill in this page), -1 ·
T 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格( 210X297公釐) -35- 472251 A7 B7_ 五、發明説明(33) (請先閲讀背面之注意事項再填寫本頁) 記錄層之媒介的反射性係大於具有結晶記錄層之媒介的反 射性。此種媒介係爲較佳媒介結構,因其具有小値顫動, 即該信號偵測位置於邊緣記錄中之分散。 該光學媒介之試樣的評估係依與實施例1至4及對照 例1至3之方式進行。 對照例6及7中,反射性太大,而評估機中難以進行 焦點控制及追蹤控制,而無法充分地評估。對照例8及9 中,折射率太小,顯然C / N比例(載流子對雜訊比)對 於實際應用而言太小,即使改善評估機以控制光學頭之位 置時亦然。 實施例5至1 9及對照例4及5中,可於僅進行複製 時進行正常追蹤控制,而測量媒介之跳動信號。T E S之 亂度係爲不大於2 0百分比之最大値,表示該媒介係正常 。換言之,用於複製之雷射能量係爲1 . 2毫瓦,而於該 低能量毫無問題。 經濟部智慧財產局員工消費合作社印製 對照例4中,評估雷射能量低,3 . 5毫瓦,而於6 毫瓦之評估參考能量後變成無法追蹤控制,換言之,該 T E S信號之亂度係大於評估極限,而無法使光學頭保持 於預定軌道上。 爲了找出前述問題之原因,於試驗前後重複觀察該記 錄媒介及光學頭。結果,未於媒介中或媒介表面上發現問 題,已發現液滴係黏附於該物鏡透鏡之表面上,面向該媒 介。進行R a m a η分析及紅外光吸收分析以發現摻有少量 烴之主要水。該烴係極少量而無法確認,然而,認爲油成 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐) 472251 A7 B7 五、發明説明(34) 分通常係存在於空氣中。對照例4中,T E S之亂度係使 用2 . 5毫瓦評估能量觀察。評估能量逐漸增加時’ T E S之亂度逐漸增加,超過評估能量3 · 5毫瓦時之\ 4 3百分比極限。 如表4所示,於對照例5中,因爲反射性差係爲 2 ◦. 3百分比,故預期具有優越之C / N比例’而該 T E S之亂度超過評估能量爲4 . 3毫瓦時之容許極限。 相反地,在與對照例4及5比較之下’僅提供A g C r合 金層之實施例5至1 9評估雷射能量令人滿意’即6毫瓦 或較高。 實施例1 1至1 7及1 9中’由反射性差係負値之事 實得知,該媒介係爲低至高極性媒介。因爲該反射性差之 絕對値於各個試樣中係爲1 7百分比或更高’故該媒介提 供充分之C / N比例’而因爲該媒介具有低至高極性’故 預期顫動--即由高密度記錄所需之邊緣標記記錄所致之 複製信號分散——小。實施例之此等試樣中’評估雷射能 量係令人滿意,即6毫瓦或更高。 如前文所述,於對照例6及7中’其中該金屬層係具 有5 5毫微米之厚度’因爲反射性太高而無法藉著所用之 評估機評估試樣。雖然若改善振幅增量可進行評估,但顯 然即使藉著修飾該評估機以進行評估’仍因該反射性差之 絕對値太小而無法得到充分之c / N比例。因此’無法進 行該種評估。 由前述實施例已知,光學頭之髒污或霧度可藉著提供 本纸張尺度適用中國國家標準(CNS ) A4規格(210x297公釐)-37 - (請先閱讀背面之注意事項#填寫本貰) -3 經濟部智慧財產局員工消費合作社印製 472251 A7 B7 五、發明説明(35) 厚度範圍爲5毫微米至5 0毫微米之金屬層而防止。故較 佳係增加記錄密度,因爲厚度範圍爲2 0毫微米至5 0毫 微米之金屬層可輕易提供低至高極性之媒介。 批衣 : 訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 38 - 5 2 2 7 4T Printed by the Intellectual Property Bureau of the Ministry of Economy ’s Consumer Cooperatives. The paper size is applicable to Chinese National Standards (CNS) A4 specifications (210X297 mm) -35- 472251 A7 B7_ V. Description of the invention (33) (Please read the precautions on the back before (Fill in this page) The reflectivity of the medium with the recording layer is greater than that of the medium with the crystalline recording layer. This medium is a better medium structure, because it has small tremors, that is, the signal detection position is scattered in the edge record. The evaluation of the samples of the optical medium was performed in the same manner as in Examples 1 to 4 and Comparative Examples 1 to 3. In Comparative Examples 6 and 7, the reflectivity was too large, and it was difficult to perform focus control and tracking control in the evaluation machine, and it was impossible to perform sufficient evaluation. In Comparative Examples 8 and 9, the refractive index was too small. Obviously, the C / N ratio (carrier-to-noise ratio) was too small for practical applications, even when the evaluation machine was improved to control the position of the optical head. In Examples 5 to 19 and Comparative Examples 4 and 5, normal tracking control can be performed when only copying is performed, and the jitter signal of the medium can be measured. The turbulence of T E S is the maximum value of not more than 20 percent, indicating that the medium is normal. In other words, the laser energy used for replication is 1.2 mW, and there is no problem with this low energy. In the Comparative Example 4 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the estimated laser energy was low at 3.5 milliwatts, and after the reference energy of 6 milliwatts was evaluated, it became impossible to track and control. It is larger than the evaluation limit, and the optical head cannot be kept on a predetermined track. In order to find out the cause of the aforementioned problems, the recording medium and the optical head were repeatedly observed before and after the test. As a result, no problem was found in the medium or on the surface of the medium, and it was found that the droplets adhered to the surface of the objective lens and faced the medium. R a m a η analysis and infrared light absorption analysis were performed to find the main water doped with a small amount of hydrocarbons. This hydrocarbon system is very small and cannot be confirmed. However, it is considered that the paper size of oil cost is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) 472251 A7 B7 5. The description of invention (34) is usually in the air. In Comparative Example 4, the turbulence of T E S was evaluated using 2.5 milliwatts. When the evaluation energy is gradually increased, the degree of turbulence of the T E S gradually increases, exceeding the \ 4 3 percentage limit of the evaluation energy of 3.5 milliwatt hours. As shown in Table 4, in Comparative Example 5, because the reflectance difference is 2%, 3%, it is expected to have a superior C / N ratio, and the TES's disorder exceeds the estimated energy of 4.3 mWh. Allowable limit. In contrast, Examples 5 to 19, which provided only the AgCr alloy layer, compared with Comparative Examples 4 and 5, evaluated that the laser energy was satisfactory, that is, 6 mW or higher. In Examples 11 to 17 and 19, the fact that the difference in reflectivity is negative indicates that the medium is a medium with low to high polarity. Because the absolute reflectivity is 17% or higher in each sample, 'so the medium provides a sufficient C / N ratio' and because the medium has low to high polarity ', tremors are expected--that is, by high density Dispersion of the copied signal due to the edge mark recording required for recording-small. In these samples of the examples, the 'evaluated laser energy was satisfactory, that is, 6 mW or higher. As described above, in Comparative Examples 6 and 7, 'wherein the metal layer has a thickness of 55 nm', the reflectivity is too high to allow the sample to be evaluated by the evaluation machine used. Although it can be evaluated if the amplitude increment is improved, it is obvious that even if the evaluation machine is modified for evaluation ', the absolute value of the poor reflectivity is too small to obtain a sufficient c / N ratio. So ‘ca n’t make that kind of assessment. It is known from the foregoing embodiments that the dirt or haze of the optical head can be adapted to the Chinese National Standard (CNS) A4 specification (210x297 mm) by providing this paper size-37-(Please read the precautions on the back first # Fill in (2) (3) Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 472251 A7 B7 V. Description of the invention (35) Prevent metal layers with a thickness ranging from 5 nm to 50 nm. Therefore, it is better to increase the recording density, because a metal layer having a thickness ranging from 20 nm to 50 nm can easily provide a medium with low to high polarity. Approval of clothing: Thread (please read the notes on the back before filling this page) Printed on the paper by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The paper size applies to China National Standard (CNS) A4 (210X297 mm) _ 38-5 2 2 7 4
AA
7 B 五、發明説明(36) 表4 經濟部智慧財產局員工消費合作社印製 反射性 於TES 亂度極 限下評 估雷射 能量 第二頂 介電層 金屬層 第一頂 介電層 結晶相 非晶相 差値 實施例5 42 10 40 30.3 9.7 20.7 6 實施例6 42 15 40 50.7 28.5 22.2 6.2 實施例7 60 5 80 40.8 20.6 20.2 6.3 實施例8 60 10 80 33.4 12.1 21.3 6.5 實施例9 60 15 80 33.8 11.0 22.1 6.8 實施例10 60 25 80 49.7 28.8 20.8 7.5 實施例11 60 20 120 5.6 23.7 -18.1 7.6 實施例12 60 30 120 14.8 37.1 -22.1 8 實施例13 60 40 120 27.3 49.9 -22.6 8.3 實施例14 60 45 120 40.7 61.1 -20.4 8.7 實施例15 60 50 120 53.1 70.1 -17.0 9.3 實施例16 120 10 120 16.1 34.7 -18.5 7.7 實施例17 120 15 120 26.0 47.7 -21.7 8 實施例18 225 5 120 25.2 5.6 19.6 8.2 實施例19 225 35 120 14.9 37.1 -22.3 9.2 對照例4 42 0 40 18 5 15 3.5 對照例5 60 0 80 52.1 331.8 20.3 4.3 對照例6 60 55 80 76.5 65.1 11.4 N.D. 對照例7 60 55 120 63.7 77.1 -13.4 N.D. 註)N . D .:無法評估。 (請先閲讀背面之注意事項再填寫本頁) t ►> 、\-° Γ -餚_ ί 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) _ 39 -7 B V. Description of the invention (36) Table 4 The reflective property printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to evaluate the laser energy under the TES disorder limit. The second top dielectric layer, the metal layer, and the first top dielectric layer. Crystal phase difference Example 5 42 10 40 30.3 9.7 20.7 6 Example 6 42 15 40 50.7 28.5 22.2 6.2 Example 7 60 5 80 40.8 20.6 20.2 6.3 Example 8 60 10 80 33.4 12.1 21.3 6.5 Example 9 60 15 80 33.8 11.0 22.1 6.8 Example 10 60 25 80 49.7 28.8 20.8 7.5 Example 11 60 20 120 5.6 23.7 -18.1 7.6 Example 12 60 30 120 14.8 37.1 -22.1 8 Example 13 60 40 120 27.3 49.9 -22.6 8.3 Example 14 60 45 120 40.7 61.1 -20.4 8.7 Example 15 60 50 120 53.1 70.1 -17.0 9.3 Example 16 120 10 120 16.1 34.7 -18.5 7.7 Example 17 120 15 120 26.0 47.7 -21.7 8 Example 18 225 5 120 25.2 5.6 19.6 8.2 Example 19 225 35 120 14.9 37.1 -22.3 9.2 Comparative Example 4 42 0 40 18 5 15 3.5 Comparative Example 5 60 0 80 52.1 331.8 20.3 4.3 Comparative Example 6 60 55 80 76.5 65.1 11.4 ND Comparative Example 7 60 55 120 63.7 77.1- 13.4 ND Note . N D:. Can not be assessed. (Please read the precautions on the back before filling out this page) t ► > 、 \-° Γ-美食 _ ί The paper size applies to China National Standard (CNS) A4 (210X297 mm) _ 39-
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TW089107394A TW472251B (en) | 1999-04-19 | 2000-04-19 | An optical recording medium and method for using same |
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JP (1) | JP2002542563A (en) |
KR (1) | KR20020002431A (en) |
CN (1) | CN1347556A (en) |
AU (1) | AU3839600A (en) |
HK (1) | HK1044844A1 (en) |
TW (1) | TW472251B (en) |
WO (1) | WO2000063899A1 (en) |
Cited By (1)
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US8133565B2 (en) | 2006-06-16 | 2012-03-13 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
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JP4269471B2 (en) * | 2000-02-21 | 2009-05-27 | ソニー株式会社 | Optical recording medium, optical pickup and optical recording / reproducing apparatus |
JP4004264B2 (en) * | 2001-10-09 | 2007-11-07 | パイオニア株式会社 | Optical recording medium |
EP1573722B1 (en) | 2002-12-13 | 2007-03-07 | Koninklijke Philips Electronics N.V. | Rewritable optical record carrier |
CN1311435C (en) * | 2002-12-13 | 2007-04-18 | 皇家飞利浦电子股份有限公司 | Rewritable optical record carrier |
US7767284B2 (en) | 2004-04-28 | 2010-08-03 | Ricoh Company, Ltd. | Optical recording medium, and, method for manufacturing the same, and method and apparatus for optical recording and reproducing thereof |
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US4847132A (en) * | 1986-10-20 | 1989-07-11 | Matsushita Electric Industrial Co., Ltd. | Protective layer for optical information recording medium |
JPH04353641A (en) * | 1991-05-30 | 1992-12-08 | Nec Corp | Optomagnetic recording single plate optical disk |
JPH06139621A (en) * | 1992-10-29 | 1994-05-20 | Matsushita Electric Ind Co Ltd | Optical recording medium |
JP2990011B2 (en) * | 1994-03-29 | 1999-12-13 | ティーディーケイ株式会社 | Optical recording medium |
JPH10289479A (en) * | 1997-04-10 | 1998-10-27 | Tdk Corp | Optical recording medium |
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US8133565B2 (en) | 2006-06-16 | 2012-03-13 | Mitsubishi Kagaku Media Co., Ltd. | Recording medium |
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