471132 6976twf. doc/006 A7 B7 五、發明說明（/) 本發明是有關於一種多重內連線（Multilevel Interconnects)的製造方法，且特別是有關於一種雙重金屬 鑲嵌結構（Dual Damascene)的製造方法。 (請先閱讀背面之注意事項再填寫本頁) 傳統的內連線作法是在用以隔離金屬層的絕緣層上， 例如氧化矽層，沈積一層金屬層後，再將金屬層定義出預 定的導線圖案，繼之使導線層之間形成一垂直連接窗口。 然後於窗口中塡入與導電層相同材質或不同材質的金屬， 用以完成導線層的垂直連接。値得重視的是，隨著積體電 路中所需導線層數目的增加，兩層以上的金屬層設計，便 逐漸的成爲許多積體電路所必需採用的方式。在金屬層之 間常以內金屬介電層（Inter-Metal Dielectrics; IMD)加以 隔離，其中用來連接上下兩層金屬層的導線，在半導體工 業上，稱之爲介層窗（Via)。 經濟部智慧財產局員工消費合作社印製 而習知形成雙重金屬鑲嵌結構的技術，其作法係在已 形成有一導電層之基底上依序形成第一介電層、氮化矽層 以及第二介電層，之後，將第二介電層圖案化形成一溝渠， 並同時以氮化矽層爲蝕刻中止層（Etching Stop)，接著， 再將氮化矽層與第一介電層圖案化形成一介層窗開口，而 此溝渠與介層窗開口共同組成-雙重金屬鑲嵌開口，然 後，再於雙重金屬鑲嵌開口塡入金屬層，即完成雙重金屬 鑲嵌結構的製造。 然而習知以氮化矽做爲蝕刻中止層將無法存效降低介 電層之介電常數。而由於氧化矽之介電常數較氮化矽之介 電常數低，因此，以氧化矽爲蝕刻中止層將可有效降低介 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 471132 6976twf.doc/〇06 A7 B7 五、發明說明（z) (請先閱讀背面之注咅？事項再填寫本頁) 電常數。但是，由於具有低介電常數之介電層之材質大多 爲有機材質，倘若以化學氣相沈積法或物理氣相沈積法形 成氧化層於介電層上，在化學氣相沈積或物理氣相沈積過 程中，氧原子組成的物質例如〇3、〇2、CT、0·以及〇2-， 會與有機材質之介電層產生反應，因此，無法使用習知化 學氣相沈積法或物理氣相沈積法形成氧化層於介電層上來 當作蝕刻中止層。 因此本發明提供一種雙重金屬鑲嵌結構的製造方法， 此方法係利用液相沈積法（Liquid Phase Deposition，LPD) 或旋塗式玻璃法（Spin-On Glass，SOG)在介電層上形成 氧化層，以作爲蝕刻中止層，不但形成氧化層之過程不會 與有機材質之介電層產生反應，且因使用較低介電常數之 氧化層當作蝕刻中止層，而可有效降低介電層之介電常 數。其中液相沈積法可參考Tetsuya Homma，Takuya Katoh， Yoshiaki Yamada，and Yukinobu Murao, /. Electrochem. Soc,, Vol. 140, No. 8, p2410-p2414, 1993。 經濟部智慧財產局員工消費合作社印製 本發明提出一種雙重金屬鑲嵌結構的方法，此方法係 在已形成有一第一導電層之基底上形成一阻障層，之後， 在阻障層上形成…第一介電層，然後，在第一介電層上以 液相沈積法或懸塗式玻璃法形成一氧化層當作一蝕刻中止 層，接著，在氣化層上形成一第二介電層，之後，園案化 第二介電層，以形成〜i溝渠，接著，圖案化氧化層，然後， 圖案化第一介電層，以形成一介層窗開口，其中溝渠與介 層窗開口共同組成一雙重金屬鑲嵌開门，最後，在去部分 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐〉 471132 697 6twf. doc/00 6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（$ ) 阻障層而暴露出第一導電層後，於雙重金屬鑲嵌開口中塡 入一第導電層，而完成雙重金屬鑲嵌之製作。 本發明以液相沈積法或懸塗式玻璃法形成氧化層當作 蝕刻中止層，可有效降低介電層之介電常數。 本發明以液相沈積法或懸塗式玻璃法形成氧化層當作 蝕刻中止層，可避免習知以化學氣相沈積法或物理氣相沈 積法形成氧化層之過程中，會有氧原子組成物質與有機材 質之第一介電層產生反應而破壞第一介電層。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖式，作詳細說明如 下： 圖示簡單說明： 第1A圖至第1E圖所示，爲依照本發明一較佳實施例 之雙重金屬鑲嵌結構之製造流程剖面圖。 圖示標記說明= 100 :基底 102 ··第一導電層 104 :阻障層 106 :第一介電層 108 :氧化層 110 :第二介電層 112、116 :光阻層 114 :溝渠 118 :介層窗開口 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 471132 697 6twf. doc/0 0 6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（f) 120 : i重金屬鑲嵌開口 122 :雙重金屬鑲嵌結構 實施例 第1A圖至第1E圖所示，爲依照本發明一較佳實施例 之雙重金屬鑲嵌結構之製造流程剖面圖。 請參照第1A圖，提供一基底100，且基底100上已形 成有一第一導電層102，而第一導電層102之材質例如爲 金屬銅。之後，在第-j導電層102上形成阻障層104，以 防止第一導電層102擴散，而阻障層104之材質例如爲氮 化矽，其厚度例如爲250埃至350埃。接著，在阻障層104 上形成第一介電層106，第一介電層106之材質例如爲矽 酸鹽聚合物（Polysilsesquioxane)、聚醯亞胺（Polyimide)、氟 化聚醯亞胺（Fluorinated Polyimide)、非晶系鐵氟龍 (Amorphous Teflon)、苯環丁稀（Benzocyclobutene)等具有低 介電常數之碳化物或含氟碳化物之有機材質，其厚度例如 爲3500埃至4500埃。 之後，在第一介電層106上形成氧化層108，氧化層 108之厚度例如爲250埃至350埃。而形成氧化層108的 方法有兩種，爲液相沈積法以及懸塗式玻璃法。 其中，以液相沈積法形成氧化層108例如在溫度攝氏 18度至攝氏40度下將晶片放置在反應液中形成，其中反 應液的製備係先取40%氫氟矽酸(H2SiF6)(含0.32%氫氟酸) 加二氧化矽粉末配置成過飽和氫氟矽酸溶液，然後將過飽 和氫氟矽酸溶液與水以6:1至3:1的比例混合而成。 ------------ 裝--------訂---------線- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 471132 6976twf·doc/〇〇6 pj ____B7 五、發明說明) 而以旋塗式玻璃法形成氧化層108例如將矽酸鹽或石夕 氧烷與有機溶劑混合’再以旋轉塗佈方式將其塗佈於第一 介電層106上，之後，將晶片送至熱爐管內，在溫度攝氏 400度至攝氏450度下將有機溶劑趕出，而形成固態之氧 化層108。 由於氧化層108之介電常數較低，以此當作蝕刻中止 層較習知以氮化矽當作蝕刻中止層，可以有效降低介電層 之介電常數’且本實施例以液相沈積法或懸塗式玻璃法形 成氧化層108於第一介電層1〇6上之過程中，不會與第一 介電層106產生反應，可避免習知以化學氣相沈積法形成 氧化層時，會有氧原子組成物質與有機材質之第一介電層 106產生反應，而破壞第一介電層1〇6。 接著，在氧化層108上形成第二介電層H0，第二介 電層110之材質例如爲矽酸鹽聚合物、聚醯亞胺、氟化聚 醯亞胺、非晶系鐡氟龍、苯環丁烯等具有低介電常數之碳 化物或含氟碳化物之有機材質，其厚度例如爲3500埃至 4500埃。然後，在第二介電層11〇上形成一圖案化之光阻 層112，以圖案化之光阻層爲罩幕移除部分第一介電層 110，以形成溝渠114，如第1B圖所示。其中因第二介電 層110與氧化層108間有一高蝕刻選擇比’而可以氧化層 108爲触刻中止層。 之後，請參照第1C圖與第圖，在第二介電層110 上形成一圖案化之光阻層116,以圖案化之光阻層丨丨6爲 罩幕移除部分氧化層108,再以圖案化之光阻層116爲罩 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------- ^--------訂---------線 r (請先閱讀背面之注意事項再填寫本頁) 471成 6976twf. doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（έ) 幕移除部分第二介電層106，以形成一介層窗開口 11 g， 且溝渠114與介層窗開口 118共同組成一雙重金屬鑲嵌開 □ 120。 然後，請參照第1E圖，在去除部分阻障層1 而暴 露出第一導電層102後，於雙重金屬鑲嵌開口 12〇中塡入 第二導電層，以形成一雙重金屬鑲嵌結構122。而在雙重 金屬鑲嵌開口 120中塡入第二導電層之方法例如在第二介 電層上形成__A第二導電層並塡滿雙重金屬鑲嵌開□ 120， 再以化學機械硏磨法進行平坦化直到第二介電層11〇暴露 出。 本發明以液相沈積法或懸塗式玻璃法形成氧化層108 當作蝕刻中止層，可有效降低介電層之介電常數。 本發明以液相沈積法或懸塗式玻璃法形成氧化層108 當作蝕刻中止層，可避免習知以化學氣相沈積法形成氧化 層之過程中，會有含氧物質與有機材質之第一介電層106 產生反應而破壞第一介電層106。 雖然本發明以一較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技術者，在不脫離本發明之精神 和範圍內，當可做些許之更動與潤飾，因此本發明之保護 範圍視後附之申請專利範圍所界定者爲準。 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------- 裝--------訂·-----|丨|^^ , (請先閱讀背面之注意事項再填寫本頁)471132 6976twf. Doc / 006 A7 B7 V. Description of the Invention (/) The present invention relates to a method for manufacturing multilevel interconnects, and in particular to a method for manufacturing a dual metal inlay structure (Dual Damascene) . (Please read the precautions on the back before filling out this page.) The traditional method of interconnecting is to deposit a metal layer on the insulating layer used to isolate the metal layer, such as a silicon oxide layer, and then define the metal layer to a predetermined The pattern of the wires then forms a vertical connection window between the wire layers. A metal of the same material or a different material as the conductive layer is inserted into the window to complete the vertical connection of the wire layer. It is important to note that with the increase in the number of conductor layers required in integrated circuits, the design of two or more metal layers has gradually become a necessary method for many integrated circuits. Intermetallic layers (IMDs) are often used to isolate metal layers. The wires used to connect the upper and lower metal layers are called vias in the semiconductor industry. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics and known for the technology of forming a double metal mosaic structure, the method is to sequentially form a first dielectric layer, a silicon nitride layer, and a second dielectric on a substrate on which a conductive layer has been formed. Electrical layer, and then patterning the second dielectric layer to form a trench, and using the silicon nitride layer as an etching stop layer, and then patterning the silicon nitride layer and the first dielectric layer A via window opening, and this trench and the via window opening together constitute a double metal inlaid opening, and then a metal layer is inserted into the double metal inlaid opening to complete the manufacture of the double metal inlaid structure. However, it is known that using silicon nitride as an etch stop layer will not be effective in reducing the dielectric constant of the dielectric layer. And because the dielectric constant of silicon oxide is lower than that of silicon nitride, using silicon oxide as the etching stop layer can effectively reduce the size of the paper. Applicable to China National Standard (CNS) A4 (210 X 297 mm) ) 471132 6976twf.doc / 〇06 A7 B7 V. Description of the invention (z) (Please read the note on the back? Matters before filling this page) Electrical constant. However, since the material of the dielectric layer having a low dielectric constant is mostly an organic material, if an oxide layer is formed on the dielectric layer by a chemical vapor deposition method or a physical vapor deposition method, the chemical vapor deposition or the physical vapor phase is used. During the deposition process, substances composed of oxygen atoms such as 〇3, 〇2, CT, 0 ·, and 〇2- will react with the dielectric layer of organic materials. Therefore, conventional chemical vapor deposition methods or physical gases cannot be used. The phase deposition method forms an oxide layer on the dielectric layer as an etching stop layer. Therefore, the present invention provides a method for manufacturing a dual metal damascene structure. This method uses a liquid phase deposition (LPD) or a spin-on glass (SOG) method to form an oxide layer on a dielectric layer. As an etching stop layer, not only does the process of forming the oxide layer not react with the dielectric layer of the organic material, but because the oxide layer with a lower dielectric constant is used as the etching stop layer, the dielectric layer can be effectively reduced. Dielectric constant. Among them, the liquid deposition method can refer to Tetsuya Homma, Takuya Katoh, Yoshiaki Yamada, and Yukinobu Murao, /. Electrochem. Soc ,, Vol. 140, No. 8, p2410-p2414, 1993. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention proposes a method of double metal mosaic structure, which is a method of forming a barrier layer on a substrate having a first conductive layer formed, and then forming a barrier layer on the barrier layer ... A first dielectric layer, and then an oxide layer is formed on the first dielectric layer by a liquid deposition method or a suspension coating glass method as an etching stop layer, and then a second dielectric is formed on the vaporization layer. Layer, and then pattern the second dielectric layer to form a trench, and then pattern the oxide layer, and then pattern the first dielectric layer to form a dielectric window opening, where the trench and the dielectric window opening Together, a double metal inlay opens the door. In the end, the paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 471132 697 6twf. Doc / 00 6 A7 B7 Employees ’consumption Cooperative printed five. Description of the invention ($) After the barrier layer is exposed and the first conductive layer is exposed, a second conductive layer is inserted into the double metal inlay opening to complete the production of the double metal inlay. The formation of an oxide layer as an etch stop layer by a product method or a suspension coating glass method can effectively reduce the dielectric constant of the dielectric layer. In the present invention, an oxide layer is formed as an etch stop layer by a liquid deposition method or a suspension coating glass method. It can be avoided that during the process of forming an oxide layer by a chemical vapor deposition method or a physical vapor deposition method, an oxygen atom constituent material and the first dielectric layer of an organic material may react to damage the first dielectric layer. The above-mentioned objects, features, and advantages of the present invention can be more clearly understood, and a preferred embodiment is given below in conjunction with the accompanying drawings to make a detailed description as follows: Brief description of the figures: Figures 1A to 1E It is a cross-sectional view of the manufacturing process of a dual metal damascene structure according to a preferred embodiment of the present invention. Symbol description = 100: substrate 102 · first conductive layer 104: barrier layer 106: first dielectric layer 108 : Oxide layer 110: second dielectric layer 112, 116: photoresist layer 114: trench 118: opening of dielectric window (please read the precautions on the back before filling this page) -------- The standard for paper size of paper is applicable to Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 471132 697 6twf.doc / 0 0 6 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (f) 120: i Heavy metal inlaid opening 122: Example of double metal inlaid structure 1A to 1E are cross-sectional views of a manufacturing process of a dual metal mosaic structure according to a preferred embodiment of the present invention. Referring to FIG. 1A, a substrate 100 is provided, and a first substrate 100 has been formed on the substrate 100. The conductive layer 102 is made of, for example, metallic copper. Then, a barrier layer 104 is formed on the -jth conductive layer 102 to prevent the first conductive layer 102 from diffusing, and the material of the barrier layer 104 is, for example, It is silicon nitride and has a thickness of, for example, 250 angstroms to 350 angstroms. Next, a first dielectric layer 106 is formed on the barrier layer 104. The material of the first dielectric layer 106 is, for example, polysilsesquioxane, polyimide, or fluorinated polyimide. Organic materials with low dielectric constant, such as Fluorinated Polyimide, Amorphous Teflon, and Benzocyclobutene, have a thickness of, for example, 3500 angstroms to 4500 angstroms. Thereafter, an oxide layer 108 is formed on the first dielectric layer 106, and the thickness of the oxide layer 108 is, for example, 250 angstroms to 350 angstroms. There are two methods for forming the oxide layer 108, a liquid deposition method and a suspension coating glass method. Among them, the oxide layer 108 is formed by a liquid phase deposition method, for example, the wafer is placed in a reaction liquid at a temperature of 18 ° C to 40 ° C. The preparation of the reaction liquid is firstly taking 40% hydrofluorosilicic acid (H2SiF6) (containing 0.32 % Hydrofluoric acid) plus silicon dioxide powder to configure a supersaturated hydrofluorosilicic acid solution, and then mix the supersaturated hydrofluorosilicic acid solution with water at a ratio of 6: 1 to 3: 1. ------------ Install -------- Order --------- Line- (Please read the precautions on the back before filling this page) This paper size applies China National Standard (CNS) A4 (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 471132 6976twf · doc / 〇〇6 pj ____B7 5. The invention is formed by the spin-on glass method 108 For example, silicate or oxoxane is mixed with an organic solvent, and then it is coated on the first dielectric layer 106 by spin coating, and then the wafer is sent into a hot furnace tube at a temperature of 400 ° C. The organic solvent is driven out at a temperature of 450 ° C to form a solid oxide layer 108. Since the dielectric constant of the oxide layer 108 is relatively low, using this as an etch stop layer is more conventional than using silicon nitride as an etch stop layer, which can effectively reduce the dielectric constant of the dielectric layer 'and this embodiment is deposited in liquid phase. In the process of forming the oxide layer 108 on the first dielectric layer 106 by the method of overcoating or suspension coating, it will not react with the first dielectric layer 106, which can avoid the conventional formation of the oxide layer by chemical vapor deposition. At this time, there will be a reaction between the oxygen atomic constituent material and the first dielectric layer 106 of the organic material, which will destroy the first dielectric layer 106. Next, a second dielectric layer H0 is formed on the oxide layer 108. The material of the second dielectric layer 110 is, for example, silicate polymer, polyimide, fluorinated polyimide, amorphous fluorene, Organic materials such as benzenecyclobutene, which have a low dielectric constant, or a fluorinated carbide, have a thickness of, for example, 3500 angstroms to 4500 angstroms. Then, a patterned photoresist layer 112 is formed on the second dielectric layer 110. The patterned photoresist layer is used as a mask to remove a portion of the first dielectric layer 110 to form a trench 114, as shown in FIG. 1B. As shown. Among them, since the second dielectric layer 110 and the oxide layer 108 have a high etching selectivity ratio ', the oxide layer 108 can be used as a contact stop layer. After that, referring to FIG. 1C and FIG. 1, a patterned photoresist layer 116 is formed on the second dielectric layer 110, and the patterned photoresist layer is used as a mask to remove a part of the oxide layer 108. Covered with a patterned photoresist layer 116. This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ----------- ^ -------- Order --------- Line r (Please read the notes on the back before filling in this page) 471% 6976twf.doc / 006 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ) The curtain removes part of the second dielectric layer 106 to form a dielectric window opening 11 g, and the trench 114 and the dielectric window opening 118 together form a double metal inlaid opening 120. Then, referring to FIG. 1E, after partially removing the barrier layer 1 and exposing the first conductive layer 102, a second conductive layer is inserted into the double metal damascene opening 120 to form a double metal damascene structure 122. The method of inserting a second conductive layer into the double metal damascene opening 120 is, for example, forming an __A second conductive layer on the second dielectric layer and filling the double metal damascene opening 120, and then flattening by chemical mechanical honing. Until the second dielectric layer 110 is exposed. In the present invention, the oxide layer 108 is formed by the liquid deposition method or the suspension coating glass method as an etching stop layer, which can effectively reduce the dielectric constant of the dielectric layer. In the present invention, the oxide layer 108 is formed as an etching stop layer by a liquid phase deposition method or a suspension coating glass method, which can avoid the conventional process of forming an oxide layer by a chemical vapor deposition method. A dielectric layer 106 reacts to damage the first dielectric layer 106. Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application. 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----------- Loading -------- Order · ----- | 丨 | ^^, (Please read the notes on the back before filling this page)