476798 經濟部智慈財產局員工消費合作社印製 A7 五、發明説明（I ) 〔技術領域〕 本發明係有關於特別裹使用於光碟用保麵(包含作爲 「層」來麵的材料。）之光翻膜，特別是有關 於括減少錯灑鏡成膜時所產生的粒子、成膜出的膜之可見 光域的透過率局、具低反射率、適用於光碟、特別是相變 化型光碟之光透過膜及該膜形成用濺鍍靶。 〔背景技術〕 近年來，高密度記錄光碟，由於不用磁頭即可進行記 錄和再生’對其感興趣的程度急劇的變高。 這種光碟可分成再生專用型、可寫入一次型、可重複 讀寫型等3種’特別是可寫入一次型或可重複讀寫型所使 用的相變化方式正受到囑目。以下針對使用該相變化型光 碟之記錄·再生原理作簡單的說明。 相變化型光碟’係藉照射雷射光以使基板上的記錄薄 月旲加熱昇溫’使該記錄薄膜的構造起結晶學的相變化(非晶 質《結晶）以進行資訊之記錄·再生，更具體的是檢測出起 因於其相間光學常數的變化之反射率變化以進行資訊之再 生。 上述相變化係藉由照射縮聚至1〜數/zm的雷射光來進 行。在這個情形，例如1/zm的雷射光束以10m/s的線速度 通過時，光碟之某一點被光照射的時間爲100ns，必須在這 段時間內檢測上述相變化和反射率。 又，在實現上述結晶學的相變化、即非晶質和結晶的 相變化上，不僅是光碟的相變化記錄層熔融和急冷，同時 本紙張尺度適用中國國家標準（CNS ) A4規格（训χ297公釐） 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 <、發明説明（V ) 其等的熱也會一再的帶給周邊的保護膜和鋁合金的反射膜 〇 基於此，相變化光碟係如圖1所示般，係將Ge-Sb-Te系等的記錄薄膜層4的兩側用ZnS · Si02系的高融點電 介質的保護膜3、5夾住，再設置鋁合金反射膜6而形成四 騰構造。 其中，反射膜6和保護膜3、5被要求能增大非晶質部 和結晶部的吸收之反射率差大的光學機能.；記錄薄膜層4 則被要求耐濕性、防止熱變形的機能、以及能控制記錄時 的熱條件之機能(參照「光學」雜誌26卷1號9〜15頁）。 如此般，高融點的保護膜3、5必須對因昇溫和冷卻之 熱的循環應力具有耐性，又其等的熱影響不可及於反射膜 或其他位置，且本身要薄、具低反射率、具不致變質的強 韌性。這就代表著保護膜3、5伴演重要的角色。 又，圖1中符號1代表雷射入射方向，符號2代表聚 碳酸酯等製的基板，符號7代表防護層(overcoat)，符號8 代表接著劑層。 上述保護膜3、5，通常係藉濺鍍法來形成出。該濺鍍 法的原理，係令正電極和負電極構成的靶互相對向，在非 活性氣體周圍氣氛下在基板和靶間施加高電壓以產生電場 ，這時電離出的電子會衝撞非活性氣體來形成電漿，該電 漿中的陽離子會衝撞靶（負電極）表面而將靶的構成原子擊 出，該飛出的原子將附著於對向的基板表面而形成膜。 作爲形成上述保護膜的靶，以往係使用將SiCh粉末和 (請先閱讀背面之注意事項再填寫本頁) 、-17 經濟部智惡財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210'乂297公釐） 經濟部智慧財產局員工消費合作社印製 476798 _ _____B7_ 五、發明説明（3 )476798 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of Invention (I) [Technical Field] The present invention relates to a special surface for use in optical discs (including materials that come as a "layer"). Optical film turning, in particular, it includes the reduction of particles generated during the film formation of the stray lens, the transmittance of the visible light region of the film formed, the low reflectivity, and it is suitable for optical discs, especially phase change optical discs. Light transmitting film and sputtering target for film formation. [Background Art] In recent years, high-density recording optical discs have become more and more interested because recording and reproduction can be performed without using a magnetic head. This type of optical disc can be divided into three types including a reproduction-only type, a write-once type, and a rewritable type. In particular, a phase change method used for a write-once type or a rewritable type is currently being watched. The following is a brief description of the recording / reproduction principle using this phase change disc. The phase-change optical disc "is irradiated with laser light to increase the temperature of the recording sheet on the substrate." The structure of the recording film undergoes a crystallographic phase change (amorphous "crystal") to record and reproduce information. Specifically, a change in reflectance due to a change in an optical constant between the phases is detected to reproduce information. The above-mentioned phase change is performed by irradiating laser light condensed to 1 to several / zm. In this case, for example, when a 1 / zm laser beam passes at a linear velocity of 10m / s, the time at which a certain point of the optical disc is illuminated by the light is 100ns, and the above-mentioned phase change and reflectance must be detected during this time. In addition, in achieving the crystallographic phase change, that is, the amorphous and crystalline phase change, not only the phase change recording layer of the optical disc is melted and quenched, but also the Chinese paper standard (CNS) A4 standard (training x297) (Mm) Gutter (please read the precautions on the back before filling out this page) A7 B7 < Invention Note (V) The heat will also repeatedly bring to the surrounding protective film and aluminum alloy reflective film. Here, as shown in FIG. 1, the phase change optical disc is sandwiched between the two sides of the recording film layer 4 such as Ge-Sb-Te based by ZnS · Si02 based high melting point dielectric protective films 3 and 5, and The aluminum alloy reflective film 6 is provided to form a quadruple structure. Among them, the reflective film 6 and the protective films 3 and 5 are required to increase the optical function of the reflectance difference between the absorption of the amorphous portion and the crystalline portion. The recording film layer 4 is required to have moisture resistance and prevent thermal deformation. Functions and functions to control thermal conditions during recording (see Optics Magazine Vol. 26 No. 1 pp. 9-15). As such, the high melting point protective films 3 and 5 must be resistant to the cyclic stress of heat due to heating and cooling, and their thermal effects cannot reach the reflective film or other locations, and they must be thin and have low reflectivity. With strong toughness without deterioration. This represents the important role of the protective film 3,5. In Fig. 1, reference numeral 1 represents a laser incident direction, reference numeral 2 represents a substrate made of polycarbonate, etc., reference numeral 7 represents an overcoat, and reference numeral 8 represents an adhesive layer. The protective films 3 and 5 are usually formed by a sputtering method. The principle of the sputtering method is that the target formed by the positive electrode and the negative electrode is opposed to each other, and a high voltage is applied between the substrate and the target in an atmosphere surrounding the inactive gas to generate an electric field. At this time, the ionized electrons will collide with the inactive gas. To form a plasma, the cations in the plasma will collide with the surface of the target (negative electrode) and knock out the constituent atoms of the target. The flying atoms will adhere to the surface of the opposing substrate to form a film. As the target for the formation of the above protective film, in the past, SiCh powder and (Please read the precautions on the back before filling out this page), -17 printed by the Intellectual Property Office of the Ministry of Economic Affairs, Consumer Cooperatives, this paper is printed in accordance with Chinese national standards ( CNS) A4 specification (210 '乂 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 476798 _ _____B7_ V. Description of the invention (3)
ZnS粉末的混合粉燒結所製造出之ZnS - Si〇2濺鍍靶。 使用ZnS-SK)2靶藉濺鍍來形成薄膜的階段，若被覆 了一定量以上，被稱作粒子(parUde)之團狀的粗粒將會附 著於薄膜上。該粒子產生的主要原因，係因濺鍍之飛濺粒 子會附著堆積於濺鍍室內壁和各種機器上，若超過一定量 將會剝落而浮游於濺鍍室內，進一步會再附著於基板或薄 膜上。 如此般，由於粒子會使薄膜的特性明顯的惡化，在基 板或薄膜上有多量粒子析出的階段，就必須停止濺鍍，打 開濺鍍室，從該室內的壁和各種機器上把會形成粒子的原 因之膜的堆積物淸掃掉。 如此般將會顯著的降低生產性。該膜的堆積物會附著 於室內的壁或各種機器上的主要原因雖還不能明確的掌握 ，但被預料的是在ZnS-Si〇2靶的製造過程、即和SiCh粉 末與ZnS粉末的混合燒結階段是有因果關係，然而以往並 未提出更好的解決對策。 又，藉濺鍍所形成的保護膜雖被要求儘可能是低反射 率，但在ZnS-Si〇2.的製造過程階段能否達成相關的改 良則還沒被做過充分的檢討。 特別是上述以往的ZnS-SiCh靶之一大問題點，由於 其材料爲絕緣體而無法實施直流濺鍍。因此，必須採用高 頻濺鍍等效率差的方法，爲得出所要的膜厚必須做長時間 的濺鍍，本來就非減少不可的粒子反而還會增加，而產生 最不希望發生的問題。 -_______ 5_ 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） ---------^------、訂-----一i (請先閱讀背面之注意事項再填寫本頁) · ~ 476798 A7 B7 五、發明説明（ι|) 本發明係爲了解決上述問題點而提出者，係對於濺鍍 靶材做基本的再檢討，能儘量減少粒子的產生、減少濺鍍 中斷或停止的次數以提高生產效率，同時得出透過率大且 低反射率的光碟用保護膜。 亦即，本發明係提供1)一光透過膜，其特徵爲含 有：擇自Nb2〇5、V2〇5、B2〇3、Si〇2、P2〇5之1種以上的玻 璃形成氧化物〇·〇1〜20重量％，AhCh或Ga2〇众1〜20重量％ ，殘餘部之擇自IruCh、SnCh、Zn〇之1種.以上的氧化物； 2)前述1)之光透過膜中，進一步含有Zr〇2或Ti〇2的硬質材 料氧化物0.01〜5重量％ ; 3)—光透過膜形成用濺鍍靶，其 特徵爲含有：擇自Nb2〇5、V2〇5、B2〇3、SiCh、P2〇5之1種 以上的玻璃形成氧化物0.01〜20重量％，Ah〇3或 Ga2〇;0.1〜20重量％，殘餘部之擇自ln2〇3、Sn〇2、Zn〇之1 種以上的氧化物；4)前述3)之光透過膜形成用濺鍍靶中， 進一步含有Zr〇2或Τι〇2的硬質材料氧化物0.01〜5重量％。 〔圖式之簡單說明〕 圖1係記錄薄膜層構造的截面說明圖。 圖2係顯示實施例的用Zn〇-Al2〇3-Nb2〇5靶成膜出的 保護膜於300°C及400°C加熱時的X射線繞射結果。 〔發明之實施形態〕 本發明的光透過膜作爲光碟保護膜來使用時，用以形 成該膜之濺鍍靶，係以擇自In2〇3、SnCh、Zn〇之1種以上 的氧化物爲主成分，並含有：擇自Nb:〇5、V:〇5、B]Ch、 Si〇2、P:〇5之1種以上的玻璃形成氧化物0.01〜20重量％， 6 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) 、-α 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 476798 A7 __B7 _ 五、發明説明（f ) Αΐ2〇3或Ga2〇3〇.l〜20重量％，又因應必要之Zr〇2或Ti〇2的 硬質材料氧化物O.Oid重量％ ;將各個粉末混合藉熱壓或 HIP(熱等靜壓)等經燒結而製造出。 添加擇自Nb2〇5、V2〇5、B2〇3、Sl〇2、P2〇5的成分內至 少1成分0.1〜20wt%的目的，是藉由該〇·1〜2〇wt%的添加， 能有效的抑制結以形成安定的光碟保護層。 一一一一..W 一一一— 為.1’一 在未滿O.lwt%時沒有添加的效果，在超過20wt%時添 加成分的結晶相會析出，故不佳。基於此·，上述氧化物的 添加範圍宜爲0.1〜20wt%。 又，Ah〇；或Ga心係添加〇·卜20重量％，Ah〇3或 Ga2〇3的含量定爲〇·1〜20重量％之理由，係低祀的體電、 —I二使JI流（DC)濺鍍變爲可IL：而能將成膜後的保護層用 ———------—一.一^___________，..…-―一 薄膜之可見光線(360〜830nm)域的透過率維持在80%以上。 在未滿lwt%時沒有添加的效果，在超過20wt%時會有 電絕緣性的傾向產生，安定的直流(DC)濺鍍變成不易得出 ，又保護層用薄膜之可見光線域的透過率會減低’故不佳 〇 又，因應必要所添加之0.01〜5重量％的TiCh的 硬質材料氧化物，j夺能1@膜強I。 以上之以擇自Iru〇3、SnCh、Zn〇之1種以上的氧化物 爲主成分之光碟保護膜用濺鍍靶，成膜後的保護膜之可見 光線(360〜830nm)域的透過率爲80%以上，又反射率爲20% 以下。對於保護膜而言此乃相當充分的値。 又，本發明之上述In2〇3系、Sn(V系、Zn〇系光碟保護 —-___7____ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） ----------^------1Τ------i (請先閲讀背面之注意事項再填寫本頁) ' 》 476798 A7 B7 五、發明説明（t ) ---*--------裝-- (請先閱讀背面之注意事項再填寫本頁) 膜形成用濺鍍靶，相較於以往的ZnS-SiOz靶，將能顯著 的減少粒子的產生。_甚理由可考慮成’ Zn〇U：身對室內 、壁和機器的附著力比ZnS來得大。 ............. 竹，_;.·.·一一”lrr〜W*·»*·，.一—〜一 …丨_ 丨 1 丨 如此般藉由減少粒子的產生，濺鍍之中斷或停止的次 數將減少，而能減少煩雜的濺鍍室內之淸掃頻度，因此具 有生產效率相較於以往大幅度的提高之效果。 又，藉由本發明的In2〇3、Sn〇2、ZnO系光碟保護膜形 成用濺鍍靶，不僅能得出上述之低反射率的膜，又針對增 ___ 大非晶質部和結晶部的吸取來使反射率差變大的光學機能 — ----- -— 1 , ..——" J 丨"'___「’ Ί" " "*'***' .......................... ' _ 1 ·Ι" ............ I -- — _ - ^ 、記錄薄膜的耐濕性和防止熱變形之機能、能控制記錄時 熱條件之機能，能再現性良好的得出可滿足這些機能之良 好且安定的ΙιυΟ;系、SnCb系、Zn〇系光碟保護膜(層）。 訂 實施例及比較例 > | 以下，根據實施例和比較例來作說明。又，本實施例 | 充其量只是一例，並非用該例來作任何的限制。亦即，本 1 發明係僅由申請專利範圍來作限制，而包含本發明的實施 線 例以外之各種的變形。以下所示的實施例是本發明之適當 _丨 經濟部智慧財產局員工消費合作社印製 且代表性的實施例。 | (實施例1) ' ] 顯示有關光碟用保護膜的實施例。彳平取AhCh粉2wt% ' I 和Nb2〇5粉10wt%，和殘餘部的Zn〇粉一起混合後，於 丨 1400°C大氣中燒結以製作出靶。所得靶的密度爲5.3g/cm3。 |A ZnS-SiO2 sputtering target produced by sintering a mixed powder of ZnS powder. At the stage of forming a thin film by sputtering using a ZnS-SK) 2 target, if it is coated for more than a certain amount, coarse particles called parUde will adhere to the thin film. The main cause of the particles is that the sputtered particles will deposit and accumulate on the interior of the sputtering chamber and various machines. If they exceed a certain amount, they will peel off and float in the sputtering chamber, and then adhere to the substrate or film. . In this way, because particles can significantly degrade the characteristics of the thin film, in the stage where a large number of particles are deposited on the substrate or the thin film, it is necessary to stop sputtering and open the sputtering chamber, and particles will be formed from the wall of the chamber and various machines. The cause of the film is swept away. This will significantly reduce productivity. The main reason why the deposits of the film adhere to the walls of the room or various devices is not yet clearly understood, but it is expected that the production process of the ZnS-Si02 target, that is, the mixing of SiCh powder and ZnS powder There is a causal relationship in the sintering stage, but no better solution has been proposed in the past. In addition, although the protective film formed by sputtering is required to have as low a reflectance as possible, whether a relevant improvement can be achieved at the stage of the manufacturing process of ZnS-SiO2 has not been fully reviewed. In particular, one of the major problems with the above-mentioned conventional ZnS-SiCh target is that the DC sputtering cannot be performed because the material is an insulator. Therefore, inefficient methods such as high-frequency sputtering must be used. In order to obtain the desired film thickness, it must be sputtered for a long time. Originally, the particles that have to be reduced must be reduced, but they will be increased, causing the most undesirable problem. -_______ 5_ This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) --------- ^ ------ 、 Order ----- 一 i (Please read first Note on the back, please fill out this page again.) · ~ 476798 A7 B7 V. Description of the invention (ι |) The present invention is proposed to solve the above problems. It is a basic re-examination of sputtering targets to reduce particles as much as possible. It can reduce the number of interruptions or stoppages of sputtering to improve production efficiency, and at the same time, obtain a protective film for optical discs with high transmittance and low reflectance. That is, the present invention provides 1) a light-transmitting film characterized by containing one or more glass-forming oxides selected from Nb205, V205, B203, Si02, and P205. 〇1 ～ 20% by weight, AhCh or Ga2〇1 ～ 20% by weight, and the remaining portion is selected from one of IruCh, SnCh, and Zn〇. The above oxide; 2) The light transmitting film of 1) above, It further contains 0.01 to 5% by weight of a hard material oxide of ZrO2 or TiO2; 3) —a sputtering target for light transmission film formation, characterized in that it contains: selected from Nb205, V205, and B203 Of one or more glass-forming oxides of SiCh, P205, 0.01 to 20% by weight, Ah03 or Ga2O; 0.1 to 20% by weight, and the remaining portion is selected from ln203, Sn02, and Zn〇 1 or more oxides; 4) The sputtering target for light transmission film formation described in 3) above, further comprising 0.01 to 5% by weight of a hard material oxide of ZrO2 or TOM2. [Brief Description of the Drawings] FIG. 1 is a sectional explanatory view of the structure of a recording film layer. Fig. 2 shows the results of X-ray diffraction of a protective film formed using a ZnO-Al2O3-Nb205 target in an example when heated at 300 ° C and 400 ° C. [Embodiments of the Invention] When the light-transmitting film of the present invention is used as an optical disc protective film, the sputtering target used to form the film is made of one or more oxides selected from In2 03, SnCh, and Zn0. Main component and contains: one or more glass-forming oxides selected from Nb: 〇5, V: 〇5, B] Ch, SiO2, P: 〇5, 0.01 to 20% by weight, 6 paper sizes Applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling out this page), -α Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 476798 A7 __B7 _ V. Description of the invention (f) Αΐ203 or Ga203.01 ~ 20% by weight, and in accordance with the necessary Zr〇2 or Ti〇2 hard material oxide O.Oid% by weight; each The powder mixture is produced by sintering by hot pressing or HIP (Hot Isostatic Pressing). The purpose of adding at least 1 to 0.1% to 20% by weight of the components selected from Nb205, V205, B203, S102, and P205 is to add the amount of 0.1 to 20% by weight, Can effectively inhibit the junction to form a stable optical disc protection layer. One by one, one by one, .. W, one by one — is .1 ’one. The effect is not added when the content is less than 0.1 wt%. When it exceeds 20 wt%, the crystalline phase of the added component will precipitate, so it is not good. Based on this, the addition range of the above oxide is preferably 0.1 to 20% by weight. In addition, Ah 0; or Ga heart system is added 20% by weight, and the reason that the content of Ah 03 or Ga 2 is determined to be 0.1 to 20% by weight is because of the low body electricity, -I two make JI DC (sputter) sputtering becomes IL: and the protective layer after film formation can be used as a visible light of a film (360 ~~~) (830nm) domain transmittance is maintained above 80%. When it is less than lwt%, there is no added effect. When it exceeds 20wt%, there is a tendency of electrical insulation. Stable direct current (DC) sputtering becomes difficult to obtain, and the transmittance of the visible light region of the protective film is transmitted. It will be reduced, so it is not good, and if necessary, 0.01 to 5% by weight of TiCh is added as a hard material oxide, j rob energy 1 @ film 强 I. The above is a sputtering target for a disc protective film selected from the group consisting of one or more oxides of Iru〇3, SnCh, and Zn〇. After the film is formed, the transmittance in the visible light (360 ~ 830nm) domain of the protective film is formed. It is 80% or more, and the reflectance is 20% or less. This is quite sufficient for a protective film. In addition, the above-mentioned In2〇3 series, Sn (V-based, Zn〇-based optical disc protection of the present invention ---___ 7____ This paper size applies to the Chinese National Standard (CNS) A4 specification (210 × 297 mm) -------- -^ ------ 1Τ ------ i (Please read the notes on the back before filling this page) '' 476798 A7 B7 V. Description of the invention (t) --- * ---- ---- Equipment-(Please read the precautions on the back before filling in this page) The sputtering target for film formation can significantly reduce the particle generation compared to the conventional ZnS-SiOz target. Considered as' Zn〇U: The body's adhesion to the room, walls, and machines is greater than ZnS. ............. bamboo, _; .. ·· one by one "lrr ~ W * · »* · ，. 一 — ~ 一… 丨 _ 丨 1 丨 By reducing the generation of particles in this way, the number of interruptions or stops of the sputtering will be reduced, and the frequency of radon sweep in the complicated sputtering room can be reduced. It has the effect of greatly improving the production efficiency compared with the past. In addition, with the sputtering target for forming an In2 03, Sn02, and ZnO-based optical disc protective film of the present invention, not only the above-mentioned film with low reflectance can be obtained. , And for the increase of ___ large amorphous portion Optical function of the crystal part to increase the reflectance difference — ----- -— 1, ..—— " J 丨 " '___ 「' Ί " " " * '***' ................ '_ 1 · Ι " ............ I-— _- ^ Moisture resistance and thermal deformation prevention function of recording film, function of controlling thermal conditions during recording, good reproducibility can be obtained to satisfy these functions, good and stable ΙΟυ; system, SnCb system, Zn〇 system Optical disc protective film (layer). Ordering examples and comparative examples > | Hereinafter, examples and comparative examples will be used for explanation. In addition, this example is an example at best, and this example is not intended to limit it in any way. That is, The invention of this invention is limited only by the scope of the patent application, and includes various modifications other than the embodiment of the invention. The embodiments shown below are suitable for the invention (Example 1) '] Shows an example of a protective film for an optical disc. 彳 Take 2% by weight of AhCh powder and 10% by weight of Nb205 powder, and Zn in the remaining portion. After mixing together, Shu 1400 ° C in the atmosphere to produce a sintered target was obtained target density 5.3g / cm3.. |
使用如此般所得的Zn〇-Ah〇3-Nb2〇5靶進行濺鍍以在 I 基板上成膜。濺鍍的條件如下所示。 |Using the ZnO-Ah03-Nb205 target thus obtained, sputtering was performed to form a film on the I substrate. The sputtering conditions are shown below. |
I 8 | 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）一' —-I 8 | This paper size applies to China National Standard (CNS) A4 (210X297mm) 1 '—-
五、發明説明（7 ) _鍍氣體 氬氣 氣壓 0.5Pa 基板溫度 室溫 月莫厚 1500 埃 經濟部智慧財產局員工消費合作社印製 對粒子的產生到必須淸掃濺鍍室內壁和機器時爲止之 基板被覆、即生產枚數作調查的結果，爲3000〜3500枚。 相較於以下的比較例(ZnS - 靶的生產枚數)其生產性係 提昇20%〜40%。 - 又保護膜的反射率爲16〜18%，充分達成目標値之20% 以下。又可見光線域的透過率爲95%，而獲得有效的保護 膜特性。 又，爲了觀察上述實施例1之用Zn〇-Al2〇3-Nb2〇5靶 成膜出的保護膜於300°C及400°C加熱(大氣中）時的結晶化 情形，係藉X射線繞射來調查其數據。爲了作比較起見， 對沒有加熱的情形也同時作測試。其結果顯示於圖2(a)、 (b)及(c)。 圖2(a)係顯示於400°C加熱的情形，圖2(b)係顯示於 3〇〇°C加熱的情形，圖2(c)係顯示未加熱的情形。 從結果可明顯的看出，即使於300°C及400°C加熱（大 氣中）的情形，是和非加熱的情形相同而完全看不出結晶化 。亦即，本發明的靶能得出無結晶化且安定的Zn〇系光碟 用保護層。 (實施例2) 秤取人丨2〇3粉2wt%和SiCh粉5wt%，和殘餘部的Zn〇 本紙張尺度適用中國國家榡準（CNS ) A4規格（210X 297公釐） ^--------^------π------^ (請先閱讀背面之注意事項再填寫本頁) · 476798 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（次） 粉一起混合後，於14〇〇°C大氣中燒結以製作出靶。所得靶 的密度爲5.2g/cm3。 使用如此般所得的Zn〇 — Ai2〇3 — SiCh ?巴進行濺鑛以在 基板上成膜。對粒子的產生到必須淸掃濺鍍室內壁和機器 時爲止之基板被覆、即生產枚數作調查的結果，爲 3000〜3500枚。相較於以下的比較例(ZnS - SW2靶的生產枚 數)其生產性係提昇20%〜40% ° 又保護膜的反射率爲16〜18% ’充分達成目標値之20% 以下。又可見光線域的透過率爲93%以上，而獲得有效的 保護膜特性。 又，爲了觀察上述實施例2之用Zn〇-Al2〇3-Si〇2靶 成膜出的保護膜於300°C加熱(大氣中）時的結晶化情形’係 藉X射線繞射來調查其數據。和實施例1同樣的看不出結 晶化。亦即，本發明的靶能得出無結晶化且安定的Zn〇系 光碟用保護層。 (實施例3) 秤取GuCh粉2wt%和NhCh粉l〇wt%，和殘餘部的 Zn〇粉一起混合後，於1400°C大氣中燒結以製作出靶。所 得靶的密度爲5.2g/cm3。 .使用如此般所得的Zn〇-Ga2〇3-Nb2〇5靶進行直流(DC) 濺鍍以在基板上成膜。對粒子的產生到必須淸掃濺鍍室內 壁和機器時爲止之基板被覆、即生產枚數作調查的結果， 爲3000〜3500枚。相較於以下的比較例(ZnS - Si〇2靶的生產 枚數）其生產性係提昇20%〜40%。 10 ^紙張尺度適用中國國家標準（CNS ) A4規格(210、/ 297公釐1 ~ (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 線 Α7 Β7 、、發明説明（"| ) 又保護膜的反射率爲16〜18%，充分達成目標値之20% 以下。又可見光線域的透過率爲91%以上，而獲得有效的 保護膜特性。 又，爲了觀察上述實施例3之用Zn〇-Ga2〇3-Nb2〇5靶 成膜出的保護膜於300°C加熱(大氣中）時的結晶化情形，係 藉X射線繞射來調查其數據。和實施例1、2同樣的看不 出結晶化。亦即，本發明的靶能得出無結晶化且安定的 Zn〇系光碟用保護層。 · 上述實施例中，係例示出在Zn〇添加AhCh和Nb2〇5的 例子、在Zn〇添加Al2〇3和SiCh的例子、在Zn〇添加Ga2〇3 和Nb2〇的例子等3例，添加其他氧化物、即V2〇5、B2〇3 及P2O5的情形，又將其等複合添加的情形也能得到同等的 結果。 又，在添加Zr〇2和Τι〇2中1種或2種的情形，也能得 出和上述實施例相同的結果。上述實施例只是顯示代表性 的實施例。 將上述實施例1〜3中粒子產生到必須淸掃濺鍍室內壁 和機器時爲止之基板被覆、即生產枚數作調查的結果和下 述比較例作對比，整理後表示於表1。 (請先閱讀背面之注意事項再填寫本頁) 、-口 經濟部智慧財產局員工消費合作社印製 表1 到淸掃爲止的生產枚數 實施例1 3000〜3500 枚 實施例2 3000〜3500 枚 實施例3 3000〜3500 枚 比較例 2500 枚 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） 476798 經濟部智慧財產局員工消費合作社印製 A7 ___B7 _ _ 五、發明説明（丨〇 ) (比較例） 接著，混合SiCh粉末20mol%和ZnS粉末80mol% ’在 氧周圍氣氛下，以1⑻〇°C、150Kgf/cm2進行熱壓，所得革巴 的密度爲3.4g/cm3。 使用如此般所得的ZnS - SW2燒結體靶進行高頻(RF)濺 鍍，對粒子產生到必須淸掃濺鍍室內壁和機器時爲止之基 板被覆、即生產枚數作調查的結果，爲2500枚。相較於實 施例其生產性係減少30%左右。 . 又濺鍍所形成的保護膜反射率高，透過率也比預期來 得低。 又，上述實施例、比較例中濺鍍靶的組成和成膜組成 的偏差，不管是任一添加成分都在靶組成的:U0%以內。 [發明效果〕 本發明的光透過膜作爲光碟保護膜使用時，藉由取代 以往的ZnS-Si〇2濺鍍靶而使用InzCh系、SnCh系、Zn〇系 光碟保護膜用濺鍍靶，能顯著的減少粒子的產生並提高皮 膜的均一性，且能在安定的製造條件下再現性良好的得出 低反射率、在可見光域具高透過性之保護膜。 如上所述，使用本發明的靶成膜出之光碟、特別是相 變化光碟的保護膜，雖會受到使用雷射光束之相變化記錄 層的加熱昇溫·冷卻時的循環熱影響，但即使受到如此般 的熱影響也不致損及保護膜的特性而能形成安定的皮膜。 又，本發明的In2〇3系、Sn〇2系、ZnO系靶係如上所述 般，不僅能得出更低反射率的膜，又針對增大非晶質部和 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1 ί- ΐ衣 、1τ線 (請先閱讀背面之注.意事項再填寫本頁) 、 y 476798 A 7 B7 五、發明説明（丨I ) 結晶部的吸收來使反射率差變大的光學機能、記錄薄膜的 耐濕性和防止熱變形之機能、能控制記錄時熱條件之機能 ，能再現性良好的得出能滿足這些機能之安定的膜。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X：Z97公釐）V. Description of the invention (7) _Plating gas argon gas pressure 0.5Pa The temperature of the substrate is not more than 1500 Angstroms, the thickness of the substrate is 1500 Angstroms, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, until the time when the interior walls and machines of the plating must be cleaned As a result of investigating the number of substrates covered, that is, the number of substrates produced, it was 3,000 to 3500. Compared with the following comparative example (ZnS-number of targets produced), the productivity is improved by 20% to 40%. -The reflectivity of the protective film is 16 to 18%, which fully meets the target 20% or less. In addition, the transmittance in the visible light region is 95%, and effective protective film characteristics are obtained. In addition, in order to observe the crystallization of the protective film formed using the Zn〇-Al2 03-Nb205 target in Example 1 when heated at 300 ° C and 400 ° C (in the atmosphere), X-rays were used. Diffraction to investigate its data. For comparison purposes, tests were also performed in the absence of heat. The results are shown in Figs. 2 (a), (b), and (c). Fig. 2 (a) shows the case where it is heated at 400 ° C, Fig. 2 (b) shows the case where it is heated at 300 ° C, and Fig. 2 (c) shows the case where it is not heated. It is clear from the results that even when heated at 300 ° C and 400 ° C (in the atmosphere), the same as the non-heated case, no crystallization was observed at all. That is, the target of the present invention can obtain a stable ZnO-based optical disc protective layer without crystallization. (Embodiment 2) Weighing: 203 powder 2wt% and SiCh powder 5wt%, and the remaining part of Zn. This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) ^ --- ----- ^ ------ π ------ ^ (Please read the notes on the back before filling out this page) · 476798 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Note (times) After the powders are mixed together, they are sintered in the air at 1400 ° C to make a target. The density of the obtained target was 5.2 g / cm3. The ZnO-Ai203-SiCh? Bar obtained in this manner was used for sputtering to form a film on the substrate. The results of investigations on the number of particles covering the substrate coating, ie, the number of pieces produced until the interior walls and equipment of the sputtering chamber had to be swept, were 3000 to 3,500. Compared with the following comparative examples (the number of ZnS-SW2 targets produced), the productivity is improved by 20% to 40% ° and the reflectivity of the protective film is 16 to 18% ′, which fully meets the target 20% or less. In addition, the transmittance in the visible ray region is more than 93%, and effective protective film characteristics are obtained. In addition, in order to observe the crystallization of the protective film formed using the ZnO-Al2〇3-Si〇2 target in Example 2 when heated at 300 ° C (in the atmosphere), it was investigated by X-ray diffraction. Its data. As in Example 1, no crystallization was observed. That is, the target of the present invention can obtain a stable ZnO-based optical disc protective layer without crystallization. (Example 3) 2% by weight of GuCh powder and 10% by weight of NhCh powder were weighed, mixed with ZnO powder in the remaining portion, and then sintered in the atmosphere at 1400 ° C to produce a target. The density of the obtained target was 5.2 g / cm3. Using the ZnO-Ga2O3-Nb205 target thus obtained, direct current (DC) sputtering was performed to form a film on a substrate. The results of investigations on the number of particles covering the substrate coating, ie, the number of pieces produced until the interior walls and equipment of the sputtering chamber had to be swept, were 3000 to 3,500. Compared with the following comparative examples (the number of ZnS-Si02 targets produced), the productivity is improved by 20% to 40%. 10 ^ Paper size applies Chinese National Standard (CNS) A4 specifications (210, / 297 mm 1 ~ (Please read the precautions on the back before filling in this page) Binding and binding line A7 Β7 、 Invention description (" |) The reflectivity of the protective film is 16 to 18%, which fully meets the target value of 20% or less. The visible light transmittance is 91% or more to obtain effective protective film characteristics. In addition, in order to observe the above-mentioned Example 3, The crystallization of a protective film formed with a Zn〇-Ga2 03-Nb205 target when heated at 300 ° C (in the atmosphere) was investigated by X-ray diffraction. Example 1 and 2 Similarly, no crystallization was observed. That is, the target of the present invention can obtain a non-crystallized and stable protective layer for a Zn〇-based optical disc. · In the above examples, the examples show the addition of AhCh and Nb205 to Zn0. In the case of Al2O3 and SiCh added to Zn0, Ga2O3 and Nb2O added to Zn0, and other oxides, that is, V2O5, B2O3, and P2O5, were added. The same results can be obtained when these compounds are added in combination. In addition, one or two kinds of ZrO2 and T02 are added. The same results can be obtained as in the above examples. The above examples are merely representative examples. The particles in the above examples 1 to 3 were coated until the substrates and the interior walls of the sputtering room had to be swept. That is, the results of the survey of the number of productions are compared with the following comparative examples, and the results are shown in Table 1. (Please read the precautions on the back before filling this page)-Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Table 1 Number of pieces produced until cleaning Example 1 3000 ~ 3500 pieces Example 2 3000 ~ 3500 pieces Example 3 3000 ~ 3500 pieces Comparative example 2500 pieces This paper size applies the Chinese National Standard (CNS) A4 specification (210 × 297) (%) 476798 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ___B7 _ _ V. Description of the Invention (丨 〇) (Comparative Example) Next, 20 mol% of SiCh powder and 80 mol% of ZnS powder were mixed in an atmosphere of oxygen at 1⑻ 〇 ° C, 150Kgf / cm2 hot pressing, the density of the obtained Geba is 3.4g / cm3. Using the ZnS-SW2 sintered body target obtained in this way, high frequency (RF) sputtering is performed, and particles are generated to the requisite.调查 As a result of investigating the number of substrate coatings, ie, the number of substrates that were coated on the interior walls and the machine during the sputtering, it was 2,500. Compared with the example, the productivity was reduced by about 30%. The protective film formed by sputtering The reflectance is high and the transmittance is lower than expected. In addition, the deviations of the composition of the sputtering target and the film-forming composition in the above examples and comparative examples are within the target composition: U0% regardless of any of the added components. [Effects of the Invention] When the light-transmitting film of the present invention is used as a protective film for a disc, a sputtering target for an InzCh-based, SnCh-based, or Zn〇-based optical disk protective film can be used instead of the conventional ZnS-Si0 2 sputtering target. It can significantly reduce the generation of particles and improve the uniformity of the film, and can obtain a low-reflectivity protective film with high reflectivity in the visible light region with good reproducibility under stable manufacturing conditions. As described above, the protective film of an optical disc, in particular a phase change optical disc, formed by using the target of the present invention is affected by the cyclic heat during heating, heating, and cooling of the phase change recording layer using a laser beam, but even if Such a thermal influence does not impair the characteristics of the protective film and can form a stable film. In addition, the In203, Sn02, and ZnO-based target systems of the present invention are not only able to obtain a film with a lower reflectance as described above, but also applicable to the increase of the amorphous portion and the size of the paper in China. Standard (CNS) A4 specification (210X297mm) 1 ί- ΐ clothing, 1τ line (please read the note on the back. Please fill in this page before filling in this page), y 476798 A 7 B7 5. Description of the invention (丨 I) Crystallization Department Absorption to increase the reflectivity difference, the optical function of the recording film, the moisture resistance of the recording film, the function of preventing thermal deformation, the function of controlling the thermal conditions during recording, and the reproducibility of the film that satisfies these functions. . (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized for China National Standard (CNS) A4 (210X: Z97 mm)