經濟部智慧財產局員工消費合作社印製 443017 A7 ____B7 五、發明説明（I ) 本發明是有關於一種背靠背式雙波長半導體雷射元 件’且特別是有關於適用於需要使用兩個不同波長之雷射 光之系統的背靠背式雙波長半導體雷射元件。 近年來’半導趙雷射元件的使用日漸廣泛，並扮演著 舉足輕重的角色。例如在光纖通訊系統中，便是使用半導 體雷射元件產生雷射光，用以作為光纖通訊系統中所需之 光訊號。再例如是在數位影音光碟機（Digital Video Disk driver, DVD driver)中，便是利用光學讀取頭中之半導 體雷射元件來產生雷射光，聚焦於碟片之後，經由碟片反 射雷射光來順利地讀取碟片上的資料》 在光讖通訊系統中，若使用多頻分工來傳送光訊號 時，則需使用兩種不同波長的半導體雷射元件之雷射光。 而在數位影音光碟機中，若要達成可凋時讀取DVD碟片與 光碟片/可錄式光碟片 (Compact-Disk/Compact-Disk-Recordable， CD/CD-R)的 需求時，亦需使用到兩種不同波長之半導體雷射元件之雷 射光’配合不同的光路，來達到讀取碟片的目的。 傳絝的作法中，因為一顆半導艟雷射元件所能發出的 光之波長是單一的，所以，在需使用兩種不同波長的半導 體雷射元件時，通常必須同時使用包含兩個不同光波長之 半導體雷射元件之兩個不同的光學讀取頭，來達成所要的 功能。 但是，如此在成本上必將提高，而且在光路的設計 上，將比只使用單一波長之半導體雷射元件更形複雜。對 ___2_ 本纸張尺度適用中國國家標準（CNS ) A4规格（2丨0X297公釐） (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 443017 A7 ____B7 V. Description of the Invention (I) The present invention relates to a back-to-back dual-wavelength semiconductor laser element 'and, in particular, it is applicable to a laser that requires two different wavelengths. Back-to-back dual-wavelength semiconductor laser element for light-emitting system. In recent years, the 'Semiconductor Zhao' laser component has been used more and more widely and plays a pivotal role. For example, in optical fiber communication systems, semiconductor laser components are used to generate laser light, which is used as the optical signal required in optical fiber communication systems. For another example, in a Digital Video Disk driver (DVD driver), a semiconductor laser element in an optical pickup head is used to generate laser light. After focusing on the disc, the laser light is reflected by the disc. Read the data on the disc smoothly >> In the optical communication system, if multi-frequency division is used to transmit the optical signal, two types of laser light of semiconductor laser elements with different wavelengths need to be used. And in the digital audio and video optical disc drive, if you need to read DVD discs and compact discs / recordable discs (Compact-Disk / Compact-Disk-Recordable (CD / CD-R)), The laser light of two types of semiconductor laser elements with different wavelengths needs to be used with different optical paths to achieve the purpose of reading the disc. In the transmission method, because the wavelength of the light emitted by a semiconducting chirped laser element is single, when two types of semiconductor laser elements with different wavelengths are used, it is usually necessary to use two semiconductor laser elements with two different wavelengths at the same time. Two different optical pickup heads of a semiconductor laser element with a light wavelength to achieve the desired function. However, this will definitely increase the cost, and the design of the optical path will be more complicated than the semiconductor laser device using only a single wavelength. For ___2_ This paper size applies Chinese National Standard (CNS) A4 specification (2 丨 0X297 mm) (Please read the precautions on the back before filling this page)
、tT 經濟部智慧財度局员工消費合作社印製 ^ 4 4 3 0 17 a7 B7 五'發明説明（>) 於設計者而言，更增加其設計之困難度。 有鑑於此’本發明的目的就是在提供一種背靠背式雙 波長半導體雷射元件，在一顆背靠背式雙波長半導體雷射 元件中，可同時產生雙波長之雷射光。藉由不同的偏」 制’來選擇所要激發之光波長。其構造簡單，成本低廉， 在各種應用中更可達到極佳的效果。 根據本發明的目的，提出一種背靠背_式雙波長半導體 雷射元件，包括：基底、位於基底上方之第一包覆層、位 於第一包覆層上方之第一波導層、位於第一波導層上方之 第一活性層、位於第一活性層上方之第二波導層、位於第 二波導層上方之第二包覆層、位於第二包覆層上方之第一 接觸層、位於第一接觸層上方並覆蓋部份該第一接觸層之 第三包覆層 、位於第三包覆層上方之第三波導層、位於第 三波導層上方之第二活性層、位於第二活性層上方之第四 波導層、位於第四波導層上方之第四包覆層、以及位於第 四包覆層上方之第二接觸層。其中，第一接觸層、第二接 觸層與基底係均為偏壓平面。當第二接觸層與基底形成偏 壓時，第二活性層發光；而當第一接觸層與基底形成偏壓 時，第一活性層發光》 根據本發明的另一目的，提出—種背靠背式雙波長半 導體象射元件之製造方法，主括：首先，形成第一包覆層 於一基底上方。接著，形成第一波導層。然後，形成第一 (活性層。捿著，形成第二波導層。然後，形成第二包覆層。 接著’形成第一接觸層。然後，形成第三包覆層。接著， ______3_____ 本紙張尺度適用中國國家梂準（CNS ) 格（2丨0X297公釐） (請先閲讀背面之注意事項再填寫本頁), TT Printed by the Consumer Cooperatives of the Smart Finance Bureau of the Ministry of Economic Affairs ^ 4 4 3 0 17 a7 B7 Five 'Invention Note (>) For the designer, the difficulty of the design is increased. In view of this, the object of the present invention is to provide a back-to-back dual-wavelength semiconductor laser element, and in a back-to-back dual-wavelength semiconductor laser element, dual-wavelength laser light can be generated simultaneously. The wavelength of the light to be excited is selected by different polarizations. Its structure is simple, its cost is low, and it can achieve excellent results in various applications. According to the purpose of the present invention, a back-to-back dual-wavelength semiconductor laser device is provided, which includes a substrate, a first cladding layer located above the substrate, a first waveguide layer located above the first cladding layer, and a first waveguide layer. The first active layer above, the second waveguide layer above the first active layer, the second cladding layer above the second waveguide layer, the first contact layer above the second cladding layer, and the first contact layer A third cladding layer above and covering part of the first contact layer, a third waveguide layer above the third cladding layer, a second active layer above the third waveguide layer, and a third active layer above the second active layer A four waveguide layer, a fourth cladding layer above the fourth waveguide layer, and a second contact layer above the fourth cladding layer. The first contact layer, the second contact layer, and the substrate are all bias planes. When the second contact layer forms a bias with the substrate, the second active layer emits light; and when the first contact layer forms a bias with the substrate, the first active layer emits light. According to another object of the present invention, a back-to-back type is proposed. The method for manufacturing a dual-wavelength semiconductor imaging device includes the following steps. First, a first cladding layer is formed on a substrate. Next, a first waveguide layer is formed. Then, a first active layer is formed. A second waveguide layer is formed. Then, a second cladding layer is formed. Then, a first contact layer is formed. Then, a third cladding layer is formed. Then, ______3_____ This paper size Applicable to China National Standards (CNS) grid (2 丨 0X297 mm) (Please read the precautions on the back before filling this page)
f 443 Ο 1 7 A7 ____B7 五、發明説明（3> ) 形成第三波導層。然後’形成第二活性雇。接著，形成第 四波導層°然後’形成第四包覆層。接著，形成第二接觸 層。最後’定義第二半導體雷射結構區，用以去除部份之 第二接觸層、第四包覆層、第四波導層、第二活性層、第 三波導層以及第三包覆層。 為讓本發明之上述目的、特徵、和優點能更明顯易 僅，下文特舉一較佳實施例，並配合所附圖式’作詳細說 明如下： 圖式之簡單說明： 第1圊繪示依照本發明一較佳實施例的一種背靠背 式雙波長半導邇雷射元件之示意圖。 第2A〜2C圖繪示乃本發明之背靠背式雙波長半導體 雷射元件之製程剖面圖。 第3A〜3B圖繪示乃本發明之背靠背式雙波長半導體 雷射元件之操作示意圖。 標號說明： 100 :基底 102，110，114，122 :包覆層 104，108，116，120 :波導層 106，118 :活性層 112，124 :接觸層 302，306 :偏壓 304，308 :開路 較佳實施例 本紙依尺度適用中國國家梯準（CNS M4规格（210x297公羡） (請先閱讀背面之注意事項再填寫本頁) T -a 經濟部智慧財產局員工消費合作社印製 443 0 1 7 A7 ___B7 五、發明説明（+ ) 請參照第1圖’其鳍示依照本發明一較佳實施例的一 種背靠背式雙波長半導體雷射元件之示意圖。本發明之背 靠背式雙波長半導體雷射元件:t要.是由兩個丰導體雷射__ 結槿層赵眢身玉_的方式.钴合達』。該背對背式雙波長半導 體雷射元件包括一第一半導趙雷射結構層與一第二半導 體雷射結構層。在基底（Sub trate) 100之上的第一半導體 雷射結構層依序包括有：包覆廣（Cladding layer)102、 波導層（Waveguide layer)104、活性層（Active layer)106、波導層108、包覆層110、以及接觸層（contact layer)112»而位於部份的第一半導體雷射結構層之上的 第二半導艘雷射結構層包括：接觸層112、包覆層114、 波導層116、活性層118、波導層120、包覆層122、以及 接觸層124。其中，活性層1〇6、118用以產生單一波長 之雷射光’且波導層104、108、116、120用以限制該單 一波長之雷射光之傳播，使之不往包覆層l〇2、ii〇、u4、 122之方向散逸》而包覆層1〇2、11 〇、114、122則用以 更進一步的限制該單一波長之雷射光之傳播，並保護活性 層 106、118 與波導層 1〇4、108、116、120。 本發明的特徵在於，第一半導體雷射結構層與第二半 導體雷射結構層係以共用/之接觸層112相連接，且接觸廣 112乃用以對第一半導體雷射結構層與第二半導體雷射結 構層提供j俺«。如第1圖所示，第一半導體雷射結構層之 寬度為Li+l2’而第二半導體雷射結構層之寬度為Li。Li 與U之值以能夠打上電極的寬度為限，例如為6〇μιη(1〇-6f 443 Ο 1 7 A7 ____B7 5. Description of the invention (3 >) A third waveguide layer is formed. Then, a second active employment is formed. Next, a fourth waveguide layer is formed and then a fourth cladding layer is formed. Next, a second contact layer is formed. Finally, the second semiconductor laser structure region is defined to remove portions of the second contact layer, the fourth cladding layer, the fourth waveguide layer, the second active layer, the third waveguide layer, and the third cladding layer. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, a preferred embodiment is given below and described in detail with the accompanying drawings' as follows: Brief description of the drawings: Section 1 A schematic diagram of a back-to-back dual-wavelength semiconducting chirped laser device according to a preferred embodiment of the present invention. Figures 2A to 2C are cross-sectional views showing the manufacturing process of the back-to-back dual-wavelength semiconductor laser device of the present invention. Figures 3A to 3B are schematic diagrams showing the operation of the back-to-back dual-wavelength semiconductor laser device of the present invention. Description of reference numerals: 100: substrate 102, 110, 114, 122: cladding layers 104, 108, 116, 120: waveguide layer 106, 118: active layer 112, 124: contact layer 302, 306: bias voltage 304, 308: open circuit The preferred embodiment of this paper is applicable to China ’s National Standards in accordance with the standard (CNS M4 size (210x297)) (Please read the notes on the back before filling this page) T -a Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 443 0 1 7 A7 ___B7 V. Description of the invention (+) Please refer to FIG. 1 'whose fin shows a schematic diagram of a back-to-back dual-wavelength semiconductor laser element according to a preferred embodiment of the present invention. The back-to-back dual-wavelength semiconductor laser of the present invention Element: t wants. It is a way of two abundant conductor lasers __ hibiscus layer Zhao Yishenyu. Cobalt Heda. ”The back-to-back dual-wavelength semiconductor laser element includes a first semiconducting Zhao laser structure layer and A second semiconductor laser structure layer. The first semiconductor laser structure layer on the substrate (Sub trate) 100 includes: a cladding layer 102, a waveguide layer 104, and an active layer. (Active layer) 106, waveguide layer 108 , A cladding layer 110, and a contact layer 112 », and the second semiconductor laser structure layer located on a part of the first semiconductor laser structure layer includes: a contact layer 112, a cladding layer 114, The waveguide layer 116, the active layer 118, the waveguide layer 120, the cladding layer 122, and the contact layer 124. Among them, the active layers 106, 118 are used to generate laser light of a single wavelength, and the waveguide layers 104, 108, 116, 120 It is used to limit the propagation of the laser light of a single wavelength so that it does not dissipate in the direction of the cladding layer 102, ii〇, u4, 122. "The cladding layer 102, 110, 114, 122 is used to The propagation of the laser light of a single wavelength is further restricted, and the active layers 106, 118 and the waveguide layers 104, 108, 116, 120 are protected. The present invention is characterized in that the first semiconductor laser structure layer and the second semiconductor The laser structure layer is connected by a common / contact layer 112, and the contact area 112 is used to provide j 俺 «for the first semiconductor laser structure layer and the second semiconductor laser structure layer. As shown in FIG. 1, The width of the first semiconductor laser structure layer is Li + l2 'and the second semiconductor laser structure layer The width of the U-value width Li.Li can be marked with the electrodes is limited, for example 6〇μιη (1〇-6
____ S Ϊ紙張尺度通用中S W家標率（CNS ) ΜίΜΜ 2丨GX297公釐> -- I ~ —^1 . 11- —1 I 1 ^^1 ^^1 I (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 “30 17 Α7 Β7 五、發明说明（5") meter)。而L!與L：：之比值例如為ι:1，但是實際應用上並 不以此為限。 (請先閱讀背面之注意事項再填寫本頁) 半導體雷射結構的主要工作原理為）選忘不同之活性 層106，118材料，偏壓之後半導體雷射結構產生該材料 所對應之固定雷射光波長。例如，當活性層1 〇 6，11 §之 材料為GaAs/AlGaAs時，其所產生的雷射光波長為 /80且mUO 9 meter);當活性層1〇6 ’ 118之材料為 InGaP/AlInGaP時，其所產生的雷射光波長為 /讪0~63〇11111;'^活性層106’118之材料為11^以讣/111(；£1八讣 時，其所產生的雷射光波長為1.2〜1. 6μιη β 所以，活性層只要選.隹味料，即可產生不同波 長之雷射光》例如在^位影音光碟機其所適用之光波 長為650nm與780nm ’故可選擇lnGaP/Al InGaP與 GaAs/AlGaAs分別做為活性層1〇6與活性層118之材料； 而在光纖通訊之分頻多工系統中，則可選擇的材料為____ S Ϊ SW standard in paper standard (CNS) ΜίΜΜ 2 丨 GX297 mm >-I ~ — ^ 1. 11- —1 I 1 ^^ 1 ^^ 1 I (Please read the note on the back first Please fill in this page for the items) Order the “30 17 Α7 Β7” printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. The invention description (5 ") meter). The ratio of L! To L :: is ι: 1, but the actual The application is not limited to this. (Please read the precautions on the back before filling out this page) The main working principle of semiconductor laser structure is) choose different active layer 106, 118 materials, semiconductor laser structure after biasing Generate a fixed laser light wavelength corresponding to this material. For example, when the material of the active layer 10, 11 § is GaAs / AlGaAs, the laser light wavelength it generates is / 80 and mUO 9 meter); when the active layer 1 〇6 '118 when the material is InGaP / AlInGaP, the wavelength of the laser light generated is / 讪 0 ~ 63〇11111;' ^ active layer 106'118 is 11 ^ to 讣 / 111 (; £ 1 1) 6 ， The wavelength of the laser light produced by it is 1.2 ~ 1.6 μm η β Therefore, as long as the active layer is selected, different flavors can be generated "Laser Light" For example, in a video player, the applicable light wavelengths are 650nm and 780nm. Therefore, lnGaP / Al InGaP and GaAs / AlGaAs can be selected as the materials of the active layer 106 and the active layer 118, respectively. In the optical fiber communication frequency division multiplexing system, the materials that can be selected are
InGaAsP/InGaAsP ’ 用以產生所需之 I300nm 與 1550nm 之 波長的雷射光。 經濟部智慧財產局貝工消費合作社印製 在第1圖中，接觸層112、接觸層124與基底1〇〇均 為偏壓平面>接觸層112與基底100用以對第一半導體雷 射結構層提供偏壓：而接觸層124與基底100則用以對第 二半導體雷射結構層提供偏壓。當接觸層112與基底1〇〇 形成偏壓時，則活性層106發光；而當接觸層124與基底 100形成偏壓時，則活性層118發光。 其中，基底可為Ρ型基底，接觸層112可為Ν型接觸 6 本紙張尺度適用中國《家棣牟（CNS > Α4規格（210Χ297公漦） 經*部智慧財產局貞工消費合作社印製 4430 1 7 A7 __.__B7 五、發明説明（6) 層，接觸層124可為P型接觸層。或是基底為N型基底， 接觸層112為P型接觸層，接觸層124為N型接觸層。 而且’接觸層112之厚度將決定背對背雙波長半導體 雷射元件是否能有效的動作。當接觸層112與基底1〇〇順 偏時’接觸層112與基底1〇〇間將有電流產生。但是，若 接觸層112之厚度變大’則所對應的電流流動之距離長度 變長’使得等效電阻值變大《如此，電流量將會減少而影 響活性層106的發光強度。同樣地，當接觸層112與接觸 層124順偏時，接觸層112與接觸層124間將有電流產 生°但是’若接觸層112之厚度變小’則所對應的電流流 動之截面積變小，使得等效電阻值變大。如此，電流量將 會減少而影謇活性層118的發光強度。所以，必須適當地 選擇接觸層112的厚度’方可以達到最好的發光效果。而 接觸層112的厚度大小可經由計算或實驗得到最佳值，例 如本實施例中取接觸層il2之厚度為〇.2~2_。 請參照第2A-2C圖，其所繪示乃本發明之背靠背式雙 波長半導艘雷射元件之製程剖面圈^本發明之背靠背式雙 波長半導體雷射元件之實施例的製程如下：首先，如第 2A圖所示，藉由蟲晶成長（epitaxial growth)的方式， 先形成基板1〇2(例如材料為injp，且為n型離子摻雜）β 接著，在基板100之上分別形成包覆層102 (例如厚度約 為0. 5〜Ιμπι ’材料為丨ηρ，且為濃度是i〇i8/cm3i Ν型離 子換雜）、波導層104(例如厚度為〇·ΐμπι，材料為 InGaAsP)、活性層106、（例如材料為InGaAsP)、波導層 --7 本紙張尺度適用中®國家揉率（CNS > A4規格（210X297公釐) —-- .(請先閲讀背面之注意事項再填寫本頁) 訂 4430 1 7 A7 B7 五、發明説明（7 ) 108(例如厚度為0‘ ΙμΐΒ’材料為InGaAsP)、包覆層11〇(例 如厚度約為0.2μιη，材料為ιηρ，且為濃度是5*1〇1?/咖3 之P型離子摻雜）、以及接觸層112(厚度約為〇 2 2叫）。 如此形成了第一半導體雷射結構層。 接著，再將第二半導體雷射結構層形成於第一半導體 雷射結構層之上。如第2B圖所示，同樣地，可藉由磊晶 成長（epitaxial growth)的方式，在接觸層112上分別形 成包覆層114、波導層116 '活性層118(例如材料為 InGaAsP)、波導層120 '包覆層122、以及接觸層124。 然後，在完成第2B圖之製程之後，先定義出所要之 第二半導體雷射結構區，例如是使用微影的方式，定義出 所需要保留的的第二半導體雷射結構層，然後再去除部份 之包覆層114、波導層116、活性層118、波導層120、包 覆層122、以及接觸層124 ’例如是以濕蚀刻或乾蚀刻方 式’以得到如第2C圖所示之結果》 簡而言之，在形成第一半導體雷射結構層於基底上方 之後’接著形成第二半導艘雷射結構層於第一半導體雷射 結構層上方》最後，定義出第二半導體雷射結構區之後， 去除部份該第二半導體雷射結構層。如此，則可得到本實 施例之背靠背式雙波長半導想雷射元件。 請參照第3A~3B圖，其所緣示乃本發明之背靠背式雙 波長半導想雷射元件之操作示意圖。如第3A圖所示，若 只要使活性層106產生雷射光，只要將偏壓302加於第一 半導體雷射結構層之上，且讓第二半導體雷射結構層成開 -—--—__ft _ 本紙浪尺度適用中國國家揉準{ CNS ) A4规格（2丨OX 297公釐） (請先閎讀背面之注意事項再填寫本頁} -訂. 線^_ 經濟部智慧財產局負工消費合作杜印製 44301 7 A7 ________B7 五、發明説明（《） 路304狀態即可。如第3B圊所示，若只要使活性層118 產生雷射光，只要將偏壓306加於第二半導體雷射結構層 之上，且讓第一半導體雷射結構層成開路3〇8狀態即可。 【發明效果】 本發明上述實施例所揭露之背靠背式雙波長半導體 雷射元件，可同時產生雙波長之雷射光。藉由不同的偏壓 控制’來選擇所要激發之光波長。可應用於需使用雙波長 之雷射光的數位影音光碟機或是光纖通訊之分頻多工之 系統中》本發明之背靠背式雙波長半導體雷射元件可簡化 前述之系統中的光路設計，以減低這些系統之成本。然本 發明並不限制於這些應用t。 綜上所述’雖然本發明已以一較佳實施例揭露如上， 然其並非用以限定本發明，任何熟習此技藝者，在不脫離 本發明之精神和範圍内，當可作各種之更動與潤飾，因此 本發明之保護範圍當視後附之申請專利範圍所界定者為 準15 (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 9_ 本紙張尺度適用中國8家標準（CNS ) Α4洗格(210 乂 297公釐）InGaAsP / InGaAsP 'is used to generate the laser light with the required wavelengths of I300nm and 1550nm. Printed in Figure 1 by the Intellectual Property Bureau of the Intellectual Property Bureau of the Ministry of Economic Affairs. The contact layer 112, the contact layer 124, and the substrate 100 are bias planes. The contact layer 112 and the substrate 100 are used to irradiate the first semiconductor laser. The structure layer provides a bias voltage: the contact layer 124 and the substrate 100 are used to provide a bias voltage to the second semiconductor laser structure layer. When the contact layer 112 and the substrate 100 are biased, the active layer 106 emits light; and when the contact layer 124 and the substrate 100 are biased, the active layer 118 emits light. Among them, the substrate may be a P-type substrate, and the contact layer 112 may be an N-type contact. 6 This paper size is applicable to China's "Home Furnishing (CNS > A4 Specification (210 × 297)), printed by the Ministry of Intellectual Property, Zhengong Consumer Cooperative. 4430 1 7 A7 __.__ B7 5. Description of the invention (6) layer, the contact layer 124 may be a P-type contact layer, or the substrate is an N-type substrate, the contact layer 112 is a P-type contact layer, and the contact layer 124 is an N-type contact And the thickness of the 'contact layer 112 will determine whether the back-to-back dual-wavelength semiconductor laser device can effectively operate. When the contact layer 112 and the substrate 100 are forward-biased', a current will be generated between the contact layer 112 and the substrate 100. However, if the thickness of the contact layer 112 becomes larger, the distance corresponding to the current flowing becomes longer, which makes the equivalent resistance value larger. In this way, the amount of current will decrease and affect the light emitting intensity of the active layer 106. Similarly, When the contact layer 112 and the contact layer 124 are biased, a current will be generated between the contact layer 112 and the contact layer 124. However, if the thickness of the contact layer 112 becomes smaller, the cross-sectional area of the corresponding current flow becomes smaller, so that The equivalent resistance value becomes larger. Therefore, the amount of current will decrease and affect the luminous intensity of the active layer 118. Therefore, the thickness of the contact layer 112 must be appropriately selected to achieve the best luminous effect. The thickness of the contact layer 112 can be calculated or tested. The best value is obtained, for example, the thickness of the contact layer il2 in this embodiment is 0.2 to 2 mm. Please refer to FIGS. 2A-2C, which are shown as the back-to-back dual-wavelength semi-conducting laser device of the present invention. Process section circle ^ The manufacturing process of the embodiment of the back-to-back dual-wavelength semiconductor laser device of the present invention is as follows: First, as shown in FIG. 2A, the substrate 10 is first formed by epitaxial growth (see FIG. 2A). For example, the material is injp, and it is n-type ion doped. Β Next, a cladding layer 102 is formed on the substrate 100 (for example, the thickness is about 0.5 to 1 μπι; the material is 丨 ηρ, and the concentration is i〇i8 / cm3i N-type ion doping), waveguide layer 104 (for example, thickness is 0 · ΐμπι, material is InGaAsP), active layer 106, (for example, material is InGaAsP), waveguide layer-7 This paper is applicable in the country. (CNS > A4 size (210X297 male ()) ---. (Please read the notes on the back before filling out this page) Order 4430 1 7 A7 B7 V. Description of the invention (7) 108 (for example, the thickness is 0 'ΙμΐΒ' material is InGaAsP), coating 11 〇 (for example, a thickness of about 0.2 μιη, a material of ιηρ, and a P-type ion dopant having a concentration of 5 * 101? / Ca 3), and a contact layer 112 (having a thickness of about 02). The first semiconductor laser structure layer. Next, a second semiconductor laser structure layer is formed on the first semiconductor laser structure layer. As shown in FIG. 2B, the cladding layer 114, the waveguide layer 116 ', the active layer 118 (e.g., the material is InGaAsP), and the waveguide can be formed on the contact layer 112 by epitaxial growth. The layer 120 ′ is a cladding layer 122 and a contact layer 124. Then, after completing the process of FIG. 2B, first define the desired second semiconductor laser structure region. For example, using lithography, define the second semiconductor laser structure layer that needs to be retained, and then remove the part. Parts of the cladding layer 114, the waveguide layer 116, the active layer 118, the waveguide layer 120, the cladding layer 122, and the contact layer 124 'for example, by wet etching or dry etching' to obtain the results shown in FIG. 2C " In short, after the first semiconductor laser structure layer is formed over the substrate, the second semiconductor laser structure layer is then formed over the first semiconductor laser structure layer. Finally, the second semiconductor laser structure is defined. After the region, a part of the second semiconductor laser structure layer is removed. In this way, the back-to-back dual-wavelength semiconducting laser device of this embodiment can be obtained. Please refer to Figs. 3A to 3B, which illustrate the operation of the back-to-back dual-wavelength semiconducting laser device of the present invention. As shown in FIG. 3A, if only the active layer 106 is required to generate laser light, the bias voltage 302 is added to the first semiconductor laser structure layer, and the second semiconductor laser structure layer is turned on ----- __ft _ The scale of this paper is applicable to the Chinese national standard {CNS) A4 specification (2 丨 OX 297 mm) (Please read the precautions on the back before filling out this page} -Order. Line ^ _ Ministry of Economic Affairs, Intellectual Property Bureau Consumption Cooperation Du printed 44301 7 A7 ________B7 5. The invention description (") Road 304 status. As shown in Section 3B 第, as long as the active layer 118 is required to generate laser light, only the bias voltage 306 is applied to the second semiconductor laser. It is sufficient to place the first semiconductor laser structure layer in an open circuit state of 308 on the radiation structure layer. [Effects of the Invention] The back-to-back dual-wavelength semiconductor laser element disclosed in the above embodiment of the present invention can simultaneously generate dual wavelengths. The laser light. The wavelength of the light to be excited is selected by different bias control. It can be applied to a digital audio-visual disc player or a fiber-optic frequency-division multiplexing system that requires dual-wavelength laser light. Back-to-back dual wavelength The conductive laser element can simplify the optical path design in the aforementioned systems to reduce the cost of these systems. However, the present invention is not limited to these applications. In summary, 'Although the present invention has been disclosed as above with a preferred embodiment, However, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be regarded as the scope of the attached patent application. The definition is subject to 15 (please read the notes on the back before filling out this page). Ordered by the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by the Consumer Cooperatives. 9_ This paper size applies to 8 Chinese standards (CNS). A4 Washing (210 乂 297 mm) )