TW440925B - Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns - Google Patents

Abstract

The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.

Description

440925 ,, A 7 _ J__B7 __ V. Description of the invention (i)-Technical scope The present invention relates generally to the use of interferometer technology to make repetitive structures during semi-guided manufacturing, especially dry lithography and optics. The integration of lithography creates an arbitrarily complex circular shape on the wafer. Background technology and technical problems The process of producing a hippocampal circuit using a large-scale integration (VLSI) is characterized by a smaller and smaller characteristic size. The lateral dimension of transistor characteristics has decreased from ~ 5 microns (4 K DRAM) in 1970 to 0.35 microns (64 M DRAM) today. Features The continuous improvement of Mincun lies in the integral part of Moove's Law, which reflects the reduction in the size of the extra features, which is characterized by a 30% reduction in the linear dimension every three years. This law is based on the semi-body industrial regulation, which is described in the <National Semiconductor Technology Roadmap for Semiconductors> (Semiconductor Industry Association, 1994), which is incorporated herein by reference. In this process, optical lithography Dominate the lithography technology in production applications. A lot of progress has been made in optical lithography and the specifications have been greatly reduced. The current optical wavelengths used in lithographic tools from the current state of the art technology range from mercury G-line (43〇ηι) to water-barium I-line (3 6 5nm ) To 24 8DUV (Kr; F). Currently, 193nm A) laser substrate steppers are being developed to continue this historical trend. At the same time, countless holes (NA) from 0.2 to ~ 0.6-0.7 improve the optical system. Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the notes on the back and fill in this education). There are several factors that work together in this direction to guide additional important improvements. It ’s not easy, and the industry is using lithography technology. There must be major changes. These factors mainly decrease the characteristic size of bismuth to a feasible optical wave (瘥 below. In addition, the line width control in high-speed circuit operation is excellent, and even the scale is reduced below the wavelength, making the line width control more difficult. For those below l93nm ArF, emitting optical materials are unavailable, and it is necessary to transition to a total reflection system. This problem—1. A paper standard is generally used. National Standard (〇 阳) 6 4 specifications (210 father 297 male) 440925 A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (2) Due to the current multilayer reflector and non-spherical optical technology, it has not been fully developed to meet these needs. Most likely, the transition to reflective Aperture will cause a large drop in possible NAs, reducing the frontier of shorter wavelengths. High-yield production with a full average power of the haze is another major problem with wavelengths shorter than 193nin. EUV lithography is based on the generation of plasma sources by lasers , And 5X reduced, non-spherical, total reflection aperture guarantee strategy with multi-employed reflectors. However, it is unclear whether this plan leads to cost-effective lithographers In time, it meets the needs of industry for the next generation of lithography capabilities. Another factor advocating the substantial change of lithography technology is around the complexity of photomasks required by future ULSI generations. This complexity adds four definitions to each generation. Times (ie, the number of crystals on the chip is） times). In addition, many potential solutions to the optical lithography question; collectively referred to as resolution enhancement, which leads to increased mask complexity (such as the introduction of serifs, Auxiliary poles, and other second-rate resolution features, or need a three-dimensional mask instead of the traditional two-dimensional mask on the glass pen (migration technology. This trend has increased the difficulty and cost of manufacturing ULSI structures with high yields. Many Alternate lithography is under study, including X-ray emission, e-beam, ion beam and probe light technology. Each has its own advantages and disadvantages, but dare to say nothing. One can be a satisfactory modification of optical lithography. 'Interference Lithoscopy, that is, standing wave images generated using two or more coherent I beams, has recently proven to provide extremely simple techniques to make the necessary scale to replace ULSI in order, see, for example, 1995 5 Issued on the 16th: Steyen R.J. Bruec.k, Saleem Zaid, and An-Shyang Chu. U.S. Patent-2-Paper Size Common Chinese Storehouse Standard (CNS) A4 Specification (210X297 mm) (read first story) (Read the notes on the back and fill in this page)

4T 4 40 92 5 at. _ B7 V. Description of the Invention (3) No. 5,415,835 "Axial Lines Involved in Lithography"; issued on June 1, 1993 ......... ,,, StevenR. The beauty of J. Brueck and Saiem H. Zaidi_Patent No. 5,2i6,257 `` The weight of gray micron lithography characteristics®j; 19S &gt; August 30, 4-issued to StevenR.J. Brueck and SaleeinH. Zaidi in the United States Zunli's Alignment Method and Apparatus for Submicron Lithographic Characteristics; February 2, 2009 by Kenneth P .. Bishop, Steven; RJ Brueck, Susan M. Gaspar, Kirt C.

Hickman, John R. McNeil, S. Sohail H, Naqui, Brian R.

US Patent Application No. 07 / 662,67 $, filed by Stallard and Qary D. Tipton, "Using Diffraction Light from a Latent Image in a Photoresist for Exposure Control; j. 24-Feb. 995, by Steven RJ. Brueck, Xiaolan

Chen, Saleem Zaidi and Diniel J. Devine's U.S. Patent Application 'Application No. 08 / 399,38' "Simple lithography of sub-micron characteristics"; i. September 9 '99 .3 "to Richard A . Myers, Nandini Mukhe.rjee and Steven RJ 'Bruec | f. U.S. Patent No. 5,247,601 "Contains Amorphism

Manufacturing configuration of large second-order optical nonlinearity in Si〇2.h waveguide structure "; issued to StevenR.J.Brtieck, RichardA .. Myers on August 24, 1993, printed by Shelley Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs (Please read the notes on the back before writing this page)

Anadi Mtiskerjee and Adam Wu, U.S. Patent No. 5,239,407, "Methods and Potential Applications for Solving Large Second-Order Non-Analytical Materials in Silicided Silicon"; Issued January 22, 1991: to Stev_en RJ Brueck, S. Schubert, Kristin McArdle and Bill W. Mulligrass U.S. Patent No. 4,987,461 "High Resolution Detector with Rectifying Fe Touch j: Issued November 14, 1_989 -3-This paper standard is applicable to Chinese national standards (CfiS &gt; A4 specifications {210X sand 7 mm) 440 92 5 A7 ___ Β7. 5. Description of the invention (4) (Please read the precautions on the back before writing this page)

Steven R, J. Brueck, Christian .F. Schauss, Marek A. Osinski, John G. Mclnerney, M. Yasin A. Raja, Thomas M. Brennan, and Burrell E. Hammons US Patent No. 4,881,236 "Wavelength Resonance "Surface-emitting semiconductor lasers"; 19 US Patent Application No. 08/63 5,565 "Slim Line Interferometer Lithography Method" filed by Steven RJ Brueck, Saleem Zaidi, and An-Shyang Chu on September 16, 1992; March 1995 U.S. Patent Partial Succession Application No. 08 / 407i〇67 "Small-Performance Arrangement Lithography Method and Apparatus" Filed by Steven R'J. Brueck, Xiaoola.n Chen, Saleem Zaidi and Daniel J. Devine on the 16th "U.S. Patent Application No. 08/1 23,543 filed by Steven RJ Brueck, An-Shyang Chu, Bruce L. Draper, and Saleem H. Zaidi on September 20, 1993," Periodicity of Quantum Size in Silicon Materials "Structure of Structure"; US Patent No. 5,705,321, "Method for Manufacturing Periodic Structures of Quantum Size in Silicon Materials", issued by Steven RJ Brueck, An-Shyang Chu, Bruce L. Draper and Saleem Zaidi on June 6, 1995; September 1996 Month 25th Steven R.J. Brueck, An-Shyang Chu, Bruce L.

I Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

U.S. Patent Division Application No. 08/7 1 9,896 filed by Draper and Saleem H. Zaidi, "Manufacture of Quantum Size Periodic Structures in Silicon Materials"; March 1992 5 0 * Κβηη6ΐ; ΙΡ.Βί3] ιορ, Ι ^ 8 &amp; Μ.Μί 1.ηει, 3. Sohail H. Naqui, John R. McNeil and Bruce L. Draper, US Patent Application No. 07 / 847,61 8 "Using Diffraction Light from a Latent Image in a Photoresist Contrast in Optimal Images "; US Patent Application No. 08 / 525,960," Producing Technology for Dipole Electro-Optical Fiber Segments ", filed by Steven RJ Brueck and Xi'ang-Cun Long on September 8, 1995; 5 years -4 -This paper size applies to China National Standard (CNS) A4 specifications (2〗 0 X 297 Public Love) Printed by the Men ’s Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy 440 92 5 Eight A7 ___ B7 _.. V. Description of the invention (5) 6 P 20 0 ¾ ^ Steven RJ Brueck, David B. Burckel, Andrew Frauengla.ss and 881661112 & 丨 &lt; 1 丨 U.S. Patent No. 5 »4g6,498" Speckle surface strain or displacement with real time Speckle dry The method and equipment for the use of profane measures "; SIA <Half #National Technology Road for Physical Education> (1994); JW Goodman <Introduction to Fourier Optics> 2nd Edition (McGrawHill, New York, i996); JW Goodman (Statistical Light, Science) (John Wiley, New York, 985) _;. Xiaolan Ch + en, SH Zaidi, SRJ Br-ueck And DJ Devine: "Interferometer lithography of submicron rudimentary holes with field emission display-!" (Jour. Vac. S &lt; ii. Tech. · B14,3339.3349, &996); SH Zaidi And SR.J. Brueek <Multiple Exposure Interferometer Lithography> (Jour · Vac · Scif Tech. B1 1, 65S, 19 92); A · Yariv <Introduction to Optoelectronics> (Holt. Reinhard and Winsto ?! New York, 1971). All of the foregoing are hereby incorporated by reference. The limited spatial frequency in interferometer lithography is commonly referred to as -λ / 2, where λ is the laser wavelength and 1: 1 green and the critical interval Dimension (CD) bird λ / 4, in contrast to the limiting CD of the imaging optical system, which is often called kA / NA, where h is the production tolerance and function of the optical system, λ is the center wavelength of the beep system, and ΝΑ Number of holes for imaging optical system. The typical value of L decreases from ι.α to ~ 0.6. This is not a simplification of the scale of the drink, but it can be explained to the point. The 193nm wavelength optical right imprint tool has a NA projection of 0.6, resulting in a limited CD of ~ 0.19 microns. The limit resolution of cypress-to-ground, line I (365ilm) dry lithography is ~ .00 μm. (With H3nm, the limit resolution of interferometer lithography is ~ .05 μm. This It has been superior to the existing projection of EUV lithography (wavelength I3nm, & .1 NA _ to 0.08 micron CD when ki is 0.6). —5 — φ The scale of the civil sheet is applicable to the Chinese national standard (〇 ^) 8 4 specifications &lt; 2 丨 0 &gt; &lt; 297 mm) ^ (Read the note on the back and read this page before filling in this page) Threading, printed by Shellfish Consumer Cooperative, Central Standards Bureau of the Ministry of Economic Affairs, printed 440925. A7. B7 _. V. Description of the Invention (6) The main obstacles related to interferometer lithography are that it is possible to linger a sufficient pattern. The collision of the properties will produce useful 脉 Circuit® type, p-beam ^ interferometer exposure in the VLSI and ULSI context. Field chastity has a periodic pattern that produces lines and intervals. Exposure to complex beams (4 or 5) produces a two-dimensional structure, but there are also simpler repeating circular types such as M or cylinder. More complex structures made using multiple interferometer exposures are found in, for example, U.S. Patent No. 5,415,83 issued May 16, 1995 to SRJ Brueck and Saleem Zaidi, "Method and Apparatus for Fine Line Dry lithography, and Jour Vac. Sci. Tech, B11, 658 (1992). Another possibility is to achieve a combination of nodal calculation and optical right imprinting. As contained in the above-mentioned patents, it has been proven to include simpler embodiments, such as The arrangement of lines involved in lithography involves the use of a second optical exposure to split the field. Multiple exposures have proven to produce more complex, but still really helpful structures. Except for the finite circle type, interferometers are currently known Right imprinting lacks sufficient and clear synthetic spasm to obtain the required structure. Therefore, there is an urgent need for technology, especially to overcome the aforementioned disadvantages related to the case technology. The invention is to provide a method for integrating optical lithography and interferometer lithography. The method is to overcome many of the shortcomings of the previous case. The preferred method of the present invention is to provide a method and a device for optical and dry lithography techniques, and the lithography task. According to special tools and methods, An optical system is provided to facilitate the integration of interferometer lithograph pepper and optical lithography, resulting in a complex structure on the same work piece, such as a semiconductor wafer. In a better example, the shape of two photomasks For the 6-iT ------ line created by the optical system on Jinghui. J-j &gt; j (Please read the notes on the back before filling this page) 440925 A7 B7 Central sample rate of the Ministry of Economic Affairs Printed by the Bureau Coconut Consumer Cooperative. 5. Details of the invention (7) are equal; the aiming beam is to intercept the two parts of Ling. An interferometer optical system is installed in the device to oppose the wafer and the normal planes are substantially equal and opposite. Angle, bring the Erguang Army image onto the wafer. According to this preferred example, the rice mask is tilted relative to the optical axis, resulting in an image surface that matches the wafer teeth after passing through the interferometer aperture? The second gist of the present invention is to propose a formal analysis program to divide any desired circle pattern into a number of specific interferometers and optical lithography · exposure. According to another gist of the present invention, the multi-beam dry lithography lithography extends Contains many individual spatial frequencies, or alternatives Continuous spatial frequency range, so it is convenient to write more complex heavy birch or non-repetitive patterns with one exposure. · According to another gist of the present invention, methods and devices are provided to extend multi-beam interferometer lithography and optics. The combination of stone fate surgery produces an arbitrary structure with higher resolution than the existing known single-use optical lithography. According to another gist of the present invention, a method and device are provided for optically forming a mask for interferometer exposure. The present invention Another gist is to provide a method and apparatus for soldering to reduce the complexity of the optical army used in the optical lithographic petal portion of the combined optical and interferometer lithographic exposure. 'Simplified illustration of the diagram' &lt; As follows, the same symbol refers to the same element 1 ^ 41 p Figure. Fortunately, the specific structure of Si is decomposed into rectangles to facilitate the Fourier transformation. -7-Thai Paper / ί Degree Applies to Chinese National Standard (CNS) Specifications (2 丨 0X297 Gong) (谙 First read the note on the back of the page before filling in this page) Order 4 40 92 5 A7, ______ B7__. 5. Description of the invention (8) 囲, the rectangle shown is slightly biased for clarity of illustration; 圄 2 is the same And the optical transfer function curve temple of different tone lighting; (Please read the precautions on the back before filling this page) Sun 3 is a previous case VLSI written on a 0.18 micron CD using a diffraction-limited optical lithography tool at a specified wavelength and NAs Illustration of the pattern; the left column represents the results of different tonal lighting, and the right column represents the results of coherent lighting; Figure 4 is an example of a VLSI chart written on a 0.18 micron CD using a combination of meter and dry meter exposure; Figure 5 is integrated optical And interferometer lithography technology, the simplification of the mask structure; Figure 6 is a simplified example of an optical system that can be used to create a field stop on a wafer according to the present invention; Figure 7 is the optical system of Figure 6 Figure 8A and Figure 8B are schematic diagrams of an alternative interferometer optical system that can be used to produce a mask image biased to high spatial frequencies; the circle 9A machine and Figure 9B respectively show the use of Figure 8A optics SEM micrographs of in-focus and out-of-focus rectangular through-holes of the system image; Figures, showing the spatial frequency of the combined imaging optics and interferometer exposures in space #Figures; employee consumption of the Intellectual Property Bureau of the Ministry of Economic Affairs Figure 11A is a simplified diagram of the optical system used in the preferred embodiment of the present invention to deviate from the zero center frequency to the spatial frequency content; Figure 11B is an example of the modification shown in Figure 11A; β 12A is a complete diagram A schematic diagram of the optical system used for the imaging of the secondary mask with three types of masks and three frequency shifts away from the low-frequency mask; Figure 12B is a specific modified example shown in Figure 12A; Figure 13 is the dry lithography and imaging optics using the configuration shown in Figure 11 Stone. —8 —-This paper size is applicable to the standard of Yin Jie's Family Standards (CNSM4 specification (2) 0 × 297). Printed by Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs j 4 4 0 9 2 5 A7 B7 V. Description of the invention (9) Imprint and technique (Π L) i! ^ The VLSI is simple to write on a 0.18 micron CD at a wavelength of 365 nm. The figure is implemented using the method and apparatus described above. Detailed description of the wax case Before reviewing the present invention, review the Fourier optics. See JW. Goodman (Introduction to Fourier Optics> 2nd Edition (published by John Wiley, New York, 1996), the entire contents of which are incorporated herein by reference. For simplicity, the following assumes that the lighting is different, so each Fourier of the image Components can be individually processed and evaluated. The discussion can be extended to the limitations of coherent illumination. Each component refers to the chirped electric field, and the result is squared to determine the intensity of the exposed surface. In practice, practical optical lithography tools typically use partially homogeneous lighting. For a more detailed discussion, see, for example, JW 'Goodman <Statistical Optics> (John Wiley, New York, 1 985). Although the use of partially homogeneous lighting will increase the computational complexity of mathematical analysis, it will not be significant to the present invention. Impact. Optical lithography systems can be divided into lighting subsystems, masks, imaging optics, and photoresistor optical responses. The purpose of lighting subsystems is to provide uniform illumination of the mask. When passing through the mask, the beam is diffracted into many The plane wave is equivalent to the Fourier component of the mask pattern. Each plane wave component propagates in different spatial directions, and is characterized by the kx and ky groups of the wave vector Mathematically, it is recorded in the plane of the photomask and becomes: (1) where the total exceeds the allowable spatial frequency, and k η / Ρχ: 11 = 0,: 1: 1, ± 2 ...; ky = m / Py; m = 0, ± l, ± 2 ..., and Px and Py are the figures in X and y -9-This paper size is applicable to Chinese National Standard &lt; CNS) A4 specification (210 X 297 mm)- ------------------- Order · --------- ίλ (Please read the notes on the back before filling this page) 4 4-0 92 5 A7 B7 V. Description of the invention (9-direction repetition period. P * and Py can be as large as the size of the repetitive 模 -type exposure mode. Because the glass mask on the glass has a two-transmission function (the picture element is either 1 or 0) ), The sum of Fourier transformations in equation (1) is better than the sin (x) / x function. •.... The appropriate phase shift is equivalent to the decomposition of the required unitary shape into a rectangle. That is: (2) Ministry of Economic Affairs The Central Standards Bureau Shellfish Consumer Cooperatives printed aKbi) as the contents of each rectangle in x (y), and Ci (4i) as the center of the rectangle deviated from the origin of the coordinates at x (y). See fault 1 at k. The required circular shape is decomposed into rectangles, as shown in a simple diagram of a typical VLSI gate structure. In particular, the illustrated specific example of the typical gate 11 is shown in the figure, which is decomposed into a long number and a square 12-16, and staggered within the bacteria to show clarity. : The imaging optical system spreads the Fourier components on the image (wafer) surface and applies a modulation transfer function (MTF). For diffraction with a circularly symmetric finite aperture, the transfer function is characterized by the spatial frequency, ket? T = NAM, where: the NA bird numerical aperture, and λ is the center wavelength. For the limitation of different lighting, MTF can be found in Goodman's "Fourier Light Second Amine (McGrawHill, New York, 1996): (3) 2 'k, BU T π cos Xpt j for Jc ^ where] i ^ Vk ^ + ky2: For k &gt; 2k〇pt, for coherent optical system, transfer the number of teeth: ～ 10-This paper size is applicable to the Chinese standard & CNS) 4 specifications C 2 丨 0X297 mm) {Please Please read the note on the back before filling this page) -line — 4 4 0 92 Printed by AA, B7, A7 B7, Intellectual Property Bureau, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of Invention (11) (4) = \ fork &lt; k ^ andT ^ {kxtky) = Ofor &gt; kopl, where the transfer function is applicable to the optical field as described above, and then the overhead image intensity is evaluated. Referring to FIG. 2, the two transfer functions are shown together with the transfer function for interferometer lithography, which will be described later. The scale is set by Ιρ, =; NA / λ, where NA is the optical sub-coefficient 値 aperture, and λ is the center wavelength of the lighting system. For different tone illumination 21, the transfer function T'k is the Fourier component applied to the intensity pattern in the mask. For coherent illumination 22, the transfer function T. ^ The Fourier component applied to the electric field in the mask, and Intensity is evaluated on the wafer surface. It also indicates that the optical transfer function used for dry lithography (23) extends to 2 / λ. The parameter variables used to depict Figure 2 are λ = 3 65ηι and NA = 0.65. The graph in Figure 2 Normalize to k / ky, removing any obvious dependence on λ. Finally, the image intensity on the wafer surface is moved to the resistive body, which typically shows a non-linear Ruiying. In this regard, the positive and negative tuning resistors It is commonly used in the industry. For the sake of clarity, the calculation shown here is for the negative trimming body (that is, the illumination area of the resistance body is retained, and the non-illumination area is removed). Note that the calculation can also be applied to the positive trimming body. For the hip, it is only necessary to tilt the mask down to reflect the illuminated and non-illuminated areas. In order to simplify the calculation, the photoresist response can be roughly used as a step function. For local intensity below the critical threshold, the photoresist The body can be assumed to be completely cleared during development, For topical strength, the developing process is not affected by the thickness of the barrier. In fact, there is a clear contrast barrier body, rather than local strong

I-degree impact imaging. The impact of these real concerns is to remove the following results: 1 1 1 This paper is applicable to the National Standard (CNS) A4 specification (210 X 297 public and private) -------------- ------ Order ---- fi tt ii I It-1-,-(Please read the notes on the back before filling this page) A7 B7 440925 V. Description of the invention (12) Certain high spatial frequency variables > To produce a limited sidewall slope rather than the steep sidewalls foreseen by this simple model. However, these effects do not affect the scope or content of the present invention. Please refer to, 3. The technical example of the previous case shows the application of this known Fourier analysis to print typical VLSI gate patterns using optical lithography tools at 365, 248, and 193 (bottom to top at 0.18 micron CD, respectively). The type is indicated by dotted lines in each unit cell. Only the perimeter of the pattern printed by the optical tool is displayed. In these peripheries, the resist is exposed and remains intact during development; 1 Outside the periphery, the resist is not exposed and is displayed in the display. Image removal (negative resistor body) ° As mentioned above, the analysis is simply modified to reverse the response of the positive resistor body. The pattern is periodic; therefore, in the actual exposure, each unit cell will be repeated multiple times Of course, the box for dividing each unit cell will not be printed. In order to provide more information on Figure 3, the adjacent unit cells show the results of different exposure tools and lighting conditions. NAs are set to 365nm (I line) at 0.65, For 248nm (KrF laser source) and 193nm (ArF laser. Source_ &gt; at 0.6. The left column indicates the results of different tonal illumination, and the right column is the same-tone illumination. A simple analysis presented in the background segment can predict that I line optic Lithography tools cannot easily write 0.18 micron CD structures (eg Lowest resolution ~ 1 ^ 11 / ^ person ~ 0.8 \ .3 65 /.65~0.45 microns). The printed shape shows that serious faltering is caused by the available limited frequency components; of course, the coherent illumination image is not uniform. Separate features, but merge into a single structure. Although not shown in Figure 3, the pattern is also very sensitive to changes in manufacturing methods, showing large changes in small variables within the optical exposure level. The pattern can be significantly improved by the 248 nm optical tool; However, it still shows a noticeably smooth edge and deviates from the required structure. ”Even the available pattern of 1 93nm soil is far from ideal. F-12- This paper size applies to China National Standard (CNS) A4 (210 X 297) %) -------— II I — I ----- III Order — points &lt; Please read the note on the back § before writing this page) System 4 40 9-2 5 A7 B7 V. Description of the invention (13) The aforementioned procedures can be used to analyze the lithographic tasks between optics and dry lithography. This analysis technology is the core of the invention. (Please read the notes on the back first (Fill in each page) Before describing the underlying analysis techniques, first explain the dry plan stone Evaluation of MTF for surgery. More specifically, the simplest type of IL uses two homogeneous beams and is incident on the substrate at the same but opposite azimuth angle (Θ) on the vertical plane of the crystal garden. The intensity on the wafer is: ( 5) IIL (x) = 2I0 [l + cos (.4Kksin (e) x + tp)] where the intensity of each beam is I., hl / λ, λ are the wavelengths of the homogeneous beam, and the citrus factor φ indicates the pattern Position relative to the coordinate system of the crystal map. This phase factor must be appropriately adjusted in multiple exposures (ie, internal exposure alignment) in order to form the desired final pattern. This is an integer MTF, which is 0 when the intensity is the lowest. The spatial frequency is: (6) kx = 2ksin (0) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the maximum spatial frequency is λ, which needs to be compared with the maximum spatial frequency of the imaging optical system, ie =. In addition, for all k &lt; kIt, the modulation transfer function for interferometer exposure is typically an integer, which is shown in Figure 2. Together with the corresponding MTFs of the optical imaging systems with coherent and different tones, it is important to Remember that the MTF used for coherent lighting is the Fourier component of the electric field, not the intensity. Take the non-linear type 13 involved in the strength — This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 440 925 A7 B7 V. Description of the invention (14) square Operation produces frequency components that extend outward to 2X k. ,,. Therefore, the explicit exposure procedure according to the required pattern of the present invention revolves around optics and interferometer lithography. According to a particularly good example, optical lithography is mainly used to provide low frequency components, while interferometer lithography is mainly used to provide higher spatial frequency components. Thresholds: Both the on-frequency (ie, maximum and minimum spatial frequencies) and amplitude (eliminating any frequency component whose Fourier amplitude is below a preset level) are set at the interferometer exposure. The same VLSI pattern used in the previous embodiment (Figure 3) is shown in Figure 4. Refer to 囫 4 for succession. The left column shows an example of setting the frequency limit. Upper left pane The entire frequency space available using interferometer lithography, so in this case, no optical lithography step is required. The resulting pattern is a closer illustration of the pattern required for any of the previous cases, even a substantially shorter wavelength; however, 51 exposures are required in this example. The two compartments below the left cabinet are examples of light-limited low frequencies, and then low and high frequencies. In each case, the low frequency component is provided by optical exposure. The right column shows the result of setting the threshold on the exposure intensity of the interferometer lithography. Gradually increasing the threshold (top to bottom) gradually produces less interferometry exposure and gradually reduces the ideal approximation of the required structure. This phenomenon emphasizes the balance between the number of exposures, which involves the production cost of exposure time, and the pattern transmission. According to the present invention, this balance can be optimally optimized in the special context of each level. As mentioned above, one of the main difficulties in facing optical lithography is to increase the complexity of the required mask. Due to the analysis procedure outlined here, it is advisable to implement optical lithography for the low-spatial frequency components of the image, and use dry plan lithography to supply high-spatial frequency components, which can drastically reduce the complexity of the mask. -14- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 public love) ϋ ϋ ϋ nn I n III ft 1 I 1 {I ^ eJ · n * 1 I nf # 1 · 1 II-- .-.- _ (Please read the notes on the back before filling out this page) Printed by the Consumer Procurement Cooperative of the Central Procurement Bureau of the Ministry of Liji'440925, A7 _._ B7___ 5. Description of the Invention (15) β See Figure 5 The VLSI pattern similar to the one shown in the previous example is used. Optical lithography is used for the purpose of achieving low spatial frequency components, and Wusi lithography is used for the high spatial frequency components of the photomask. To put it more succinctly, the left grid of circle 5 uses a complete light seal structure (shown in dotted lines), and only prints (wood homophony) low-space frequency parts (up to kwPNA / λ). The upper grid shows plus 51. Secondary interferometer light (lean line) (see upper left grid of Figure 4), and simple amplitude threshold (dotted line, limited interferometer lithography results only seven exposures. These results are qualitatively equal to Ning 4 As shown in the figure below, circle 5 is a simpler photomask (the simplified photomask A is shown as a dashed line), and when this photomask passes through the imaging system, there is no limit to the spatial frequency beyond the inherent imaging system. The resulting intensity shape. This mask is much simpler than the completely round type, but can produce very similar results in the limited frequency space of optical tools. The mask round type A is the result of low frequency in the upper grid, using trial and error The method guide, let the A round shape be obtained through the imaging simulation described in the previous paragraph. Note that due to the repeating round shape, the pattern AR has a single rectangular through hole per repeating unit. Continue to refer to Figure 5. The right middle grid indicates the use of optical exposure The tritiated pattern A used, and added dry stone The results of the exposure (no threshold, full range of available spatial frequency) are very close to the full mask. The broken curve represents seven. Interferometer lithography exposures. The low-frequency mask can be further simplified to the bottom left A simple straight line segment is shown in the grid. Because it is a Lou renaturation pattern, it is a wide line that extends to the full width of the mold shell. &Lt; The lower right cell of Figure 5 indicates that it is used 51 times (solid line) and 7 times (broken). (Line) Dry If lithography exposure, increase the results of high-frequency components. This result is very close to the full mask, and far better than even 193nm optical exposure tools can be obtained. —1 3 — This paper scale is suitable for t 囡 country橾 Standard (CNS &gt; Λ4 specification U10X297 mm) (Please read the precautions on the back before filling page f)

4 4 0 9 2 5 A7 B7 V. Description of the invention (16) (Please read the notes on the back before filling # page) There are very few differences between the exposures, which means that the simplified optical army can be used for optical lithography steps and reduce the photomask Causes difficulties and still maintains good image transmission. As mentioned above, a careful balance must be made between the individual levels, the number of exposures (throughput), and the graph_type. Combining most (more than two) beams in a single exposure can also reduce the number of dry exposures. This simple example is described in a related U.S. patent application No. 08/3 99,3 8 1 filed by Steven RJ Brueck, Xiaolan Chen, Saleem Zaidi and Daniel J. Devine on February 24, 995, "Simple Arrangement of Sub-Micron Characteristics" The methods and devices of lithography are discussed a little. This first application provides a series of techniques for writing special two-dimensional exposures, especially the rough arrangement of holes in the positive photoresist layer (aperture: inner hole distance &gt; 1: 3), which provides three, four and five A special case of Guangdong exposure. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Interferometry lithography exposure areas are often needed and must be divided. The typical mold size for a single exposure (currently about 20 × 300 tnm2) is much smaller than the wafer size (200 mm to 300 mm diameter). In order to obtain a uniform exposure across the mold, the beam is expanded across the field size and transformed into a uniform intensity. However, the green edge of the beam must be non-uniform, and if the crystal pattern is allowed to be exposed, it will result in a substantially circular non-uniformity. One technique for addressing this is to add a field stop (mask) through hole just above the wafer to divide the exposure area. However, the major problem with this strategy is the diffraction effect around the via. From the diffraction theory, these extend ~ 10 ^ 1 into the pattern, where L is the distance from the field stop to the wafer. For the actual lean distance L ~ lmm, this diffraction ringing extends ~ 0.3mm into the pattern. This result is unacceptable in many applications. One technique to eliminate this ringing is to make the edges of the through holes random and roughly wavelength-specific—16. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love) 440925 A7 B7 Employees of the Central Standards Bureau of the Ministry of Economic Affairs Printed by Consumer Cooperatives 5. Invention Description (17). Field, will not increase the deviation from the edge. It can better maintain Mongolian lithography. Another variation that provides improved feasibility is to make the field blue move away from the wafer and increase the optical system. At the same time, it has two functions: ( υ imaged the field beam on the wafer, (2) The dark quasi-beam incident on the field diaphragm was transformed into the aiming beam on the wafer. See Figure 6. Field 酹 31 is used to compare the optical system used for imaging on the wafer S2. The best specific examples include mirrors 33 and 34, the focal lengths of which are center and center respectively, the distance h of the mask 31 placed in front of the first convex mirror 33, where the separation between the convex mirrors is moderate and fi + f2, and the wafer 32 is placed In the second convex, the distance G_ behind the mirror 34 is magnified. The field stop is suitably placed in front of the first convex mirror 33 to illuminate the laser source (that is, the maximum radius of curvature of the wave array mask) and illuminate it. The field curvature is approximately equal. In this configuration, the curvature of the wave array p is not affected by this optical system. The diffraction of the field image of the wafer has a limited edge, which is appropriate to the wavelength. The ratio is inversely proportional to the numerical aperture of the optical system. This is only a type of optical system and is used to transfer the mask The image, while maintaining the overall wave: the flatness of the front, the general term of a particular appropriate optical system, is the condition that the terms B and C of the overall ABCD ray transfer matrix of the optical system are 0. See A. Yariv (Optical Electronics Discussion> (HoHs Reinhart and Winston, New York, 1 叨 1), discussed the ABCD ray tracing transfer matrix 6 The mathematical description of this imaging system is directly directed to the above-mentioned guided Fourier concept. Because the mask lighting is used Coherent homogeneity, first beam, p is analyzed by homogeneous imaging. The electric field line just behind the mask is written as: (7) = iZmxtky) en ^ xei2sk &gt; y 17 This paper standard applies to the Chinese Enclosure Standard (CNS) ΑΊ 说 格 (21 〇X297mm) Please read the notes before you read

Printed by the Industrial and Commercial Cooperatives of the Central Bureau of quasi-government of the Ministry of Economic Affairs ^ 4 4 0 9 2 5 at B7 Revolution and Invention Description (18) where M (k *, ky) is a half-shade transmission function. For the non-periodic mask pattern, the sum of kx and ky is changed to the normal way. 6 The modulation transfer function is assigned to the optical chirping system: T £ (kxtky) = \ for ^ k] + kl &lt; kept ξ ΝΑ / λ (8) = 〇for batch + k2y &kop; where E notes that the transfer function should be applied to the field instead of intensity. The electric field on the wafer is: (9) Emcak (x, y) = and the degree of flatness is: · (10) = ΣΣΣΣ zenith; *, () ·, 〇 Yan *; *; · *; *; = ΣΣ "(, 0〆, 21 ^ · '. *: *; Where I is the Fourier transformation of the intensity, true for simple transmitted light m, and the apostrophes on k〆 and k / represent the result of the square operation, and the electric field Fourier The transformed 1 ^ and ky are appropriately combined and extended to 2x1 ^^. The _frequency circle type defined by the mask can be moved to higher spatial frequencies by splitting the optical path &lt; and introducing interferometer optics. 菝 See 鼸7, this: _ The preferred specific example of the optical system of 圄 6 is extended to a device that incorporates thousands of techniques in the right-hand printing system. In terms of true body, each of the photomasks 41, 42 is not necessarily _ 18 — This paper size applies to the standard of Chinese garden gardener (CNS) Λ4 (210X297 mm) (please read the precautions on the back before filling this page)

-.1T 4 4092 5 # A7 ._. _ B7 __ 5. The description of the invention (19) is the same, and it is suitable to be introduced into two parts of the beam (for example, two halves). The array surface causes any tilt &gt; These masks should be tilted so that the final image plane is on the wafer: flat shame. The optical system contains convex mirrors 33, 34, their positions. See 囫 6. Finally, interferometer optics were introduced to provide high affinity bias. The optical system of the interferometer shown in Fig. 7 moderately includes a plurality of (for example, four) mirrors (45, 46, 4.7, 4 8), splits the beam into sections (for example, two sections), and interferes on the 15 side of the wafer. In the specific example shown in the figure, the interferometer optical system is suitable for constituting-'. Y mask artifacts onto a wafer so as to have substantially equal and opposite angles to the wafer normal. The advantages of this system include that the two beams have the same central path length without induction astigmatism. Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs (please read the note f on the back, and then fill out this page). See Figure 8 for details. Various modifications can be used to generate a mask image that is biased towards high-altitude frequencies. Specifically, 囫 8A adopts a simple Fresnel configuration, including Fresne lens 34 and mirror 51, and its shape can apply a mask image to a work piece (such as a wafer) 32. Although the shape of FIG. 8A is attractive, its shape is simpler to involve only one mirror (51), the length of the two center paths is different, and different photomask surfaces for two photomasks are required. FIG. 8B shows the shape of the triplex mirror (52), in which the central path lengths are equal, but the triplex quasi-astigmatism phenomenon requires different photomask surfaces in the X and y lines. The mathematical description of these systems is derived from circle 7 and needs to not affect the basic knot: small changes in 燊 to apply this item to the alternative optical program described in Figures &amp; using Equation 9 in the optical fist of Figure 7 System, get: This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) MO 92 5 A7 B7 -i2 «m〇c Printed by Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs Ⅴ 5. Description of invention (20 ( 11) ΣΣΜ (Κ ·) τ ^ ， \.) # Ν2 Among them, u, i is added to the photomask, which means it may not be the same; W = Sine / X is added to each beam by using dry optics Spatial frequency bias. Use the intensity to get the light: the image printed on the resistive body law: f ^ r (^ y) = = ΣΣ *. (Ckiy '-^ e12 ^ + ΣΣ ^^ Χ) βί2πί: χε2Ά * &gt; k' · k \ t: *; (12).. V *, *, *, *; In special cases, the two masks are equivalent and can be rewritten as: (13) = 2ΣΣ) Equation (13) is equivalent to a high-frequency interferometer Mask-shaped altar with 圚 -shaped modulation. For example, if the mask circle type is only a field stop, the resulting printed chirp is a chirped spatial frequency line: The space chirp is divided by the field diaphragm at the edges, as described above. The edges of the field chirps are typically limited by the optical system. , Limited to a distance of ~ λ / NA. The more complex mask round shape is obviously twistable; of course, with the introduction of the extra high spatial frequency modulation of the 'dry meter optical system' of the present invention, the spatial frequency limit of the optical system &lt;

Here, any photon quotient type Q can be reproduced. Refer to 圄 9, which represents a complex microphotograph, showing the initial experimental proof. Using the optical configuration of Fig. 8A, each line is printed in a limited field: empty 20 — this paper size Applicable to China National Standard (CNS) A4 specification (2 丨 0X297mm) (Please read the note on the back before filling in this page)

^ 40 92 5 1 A7 _____B7_ 5. Description of the invention (21) Round type. The light source was an argon ion laser at 364iim. This is an extremely low NA optical system (~ 0. 06), using an uncorrected spherical lens with a single element, limiting the diffraction-limited edge to only ~ 6 microns, which may have a significant contribution from lens aberrations. The upper two SEMs (Figure 9A) show the situation in focus. Both the vertical sides of the field stop (parallel to the interferometer grating line) and the horizontal sides (to the interferometer grating line) are limited to ~ 10 microns. This edge is limited to a factor of 2 to 3 from the theoretical diffraction limit (11 &gt; ^ 8 to 4 microns). Note: The grating period of 0.911111 is basically provided with a hidden measuring device. In contrast, the lower SEM (circle 9B) indicates a similar result of the out-of-focus situation. The intensity at the edge is caused by diffraction; the distance from the first edge to ~ 30 microns can be corrected by the distance from the focal plane (ie, defocusing). 3,5mm 〇 Equation 3 can be rewritten to emphasize the distribution of the spatial frequency contribution related to this circular image: Q force, less) 口 2ΣΣι 丁丁 1 + c〇 物 收)] (14) ". · = 2ΣΣ丨 (CI) 〆 + ΣΣι (t Ο〆 * strict… (21 &quot; 々 + e instruction. Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (please read the precautions on the reverse side before filling out this page) Details Studying equation (14), there are three zones of frequency space with significant frequency content: The low frequency zone is changed by the lens system and presented in terms of intensity conditions, and this intensity pattern has two copies, one shift +2 wx, one shift -2 wx is the result of the interferometer optical life. This situation is shown in Figure I 0 A, which is an appropriate mode of the full-range frequency space, using an optical system example such as that shown in Figure 8A, and masking with exposure as described in Equation 14. Specifically, In other words, the full range of the frequency space can be obtained. The shape is a large circle 104 with a radius k1L = 2 / \. A small solid circle 106, 108, 110, representing -21 — This paper size is applicable to the Chinese national standard (€ milk) to the specifications (2) (^ 297 males &gt; 440925 A7 B7 V. Description of the invention (22 ) The aforementioned three-zone frequency space has important frequency content. For the optical system used for the circle 9 proof, the low-frequency zone is contained in a circle with a radius of 2 kept42NAM, NA = 0.06. The two zones generated by the interferometer method have a 0.9¾ pitch. , The deviation of 2w = 2sin (e) M and sin (bow) = 0.2. The radius of each deviation zone is equal to that of the low frequency zone. From Equation 3, the MTF of the optical system decreases monotonically along the radial direction of each frequency zone to The edge of the circle shown in A10A is 0. Note that the lens optical system (circle 6) alone cannot produce a 0_9_ period first grid, but the interferometer system (circle 8 A) included with the lens system, shifts the frequency content of the image To the higher frequencies necessary to generate the grating, while maintaining the content of the low frequency region, forming an image area. It is important to combine the images of the optical system, whose frequency content covers the continuous region of the frequency space; relatively, the above periodicity In the discussion of structure, only the frequency space In order to separate the circular cases with wider periods (12 X CD at X and 5X CD at y), it is necessary to copy the 圄 type (see the above discussion on Figure 1, Circle 3, Figure 4 and Circle 5). It was proved once that the optical system of Huazhong Zhongyong was used. From the circle 10A, it can be seen that the obtained pattern only covers a small area of the available frequency space. The group PB represents a small exposure with a moderate optical system, such as a lens of 0.33. The possibility of renting more spatial frequency space, the deviation 菡 in the frequency space is shown in the 1 ^ and ky directions. In this way, a second exposure similar to the optical system shown in Figures 7 and 8 can be used, or a single exposure of the four-beam interferometer system in the case of plane wave conditions (such as the Ning point in frequency space), which is described in Steven RJ Brueck, Xiaolan Chea, Saleem Zaidi SJ Daniel J. Devine, U.S. Patent Application No. 08 / 399,381, filed on February 24, 1995, f'rough sub-micron characteristics lithography. ' Because the frequency components are along I and -22-This paper size is applicable to China National Standards (CNS) Λ4 grid U 丨 0 X 297 mm) Please read the precautions before filling in this page and set the central standard of the Ministry of Economic Affairs Bureau employee consumer cooperative printed r, 440 92 5 A7 B7 V. Description of the invention (23) The cypress phase of the ky axis is different from one circle to another, and it is likely to require double exposure. Build a NA of λ / 3, because the diameter in the middle of the three circles can achieve the minimum NA continuously covered by the frequency space. Since the priming system of the bismuth at the edge of the circle should be inadequate, either increase the exposure or increase it. Large NA optical system to achieve Yao Quanhan. The frequency content of the straight round shape is mostly concentrated near the kx and ky axes; therefore, the air space coverage is satisfactory. Apricots need to increase exposure, increase the beam path, or both. Even with sufficient exposure at a sufficiently large NA to ensure complete coverage of the frequency space, this configuration is still not suitable for imagery with arbitrary patterns. Because each intensity pattern represents a true mask image; there are several constraints on the Fourier component. In particular, for the simple transmission mask described in Equation 10, the mask is a real image and the intensity after the positive image needs: (15) I (kx, ky) = I ^ (-kx, -ky) The image must maintain this same relationship. However, the interference if optical system gives more restraint, such as: (16) = 1 (^ + 2w, ky) = I \ ~ kx-2w-ky) ~ i (kx -2w7ky) ~ i '(~ kx + 2w, ~ ky) For the post-image, it is still necessary to maintain the lines (shown as a pair relationship, but the relationship maintained between this unitary pair needs to be restricted by the final image. According to the present invention, there are at least three measures Reconcile the foregoing constraints: (1) overlapping multiple exposures to break this symmetry; (2) making angular photomasks or other three-dimensional—2 3 _ • m * This paper's wave scales apply the Chinese National Standard (&lt;: Ν5) Λ4 specifications (210X29? Mm)

Note

I

Page 4 40 92 5 A7 B7 V. Description of the invention (24) Degree-photomask, break. Equation 15 describes hip symmetry; (3) change the optical system, use different photomasks on the upper and lower arms, and introduce another Aperture, shift the center of frequency response away from kx = ky = 0, 庳 positive and negative frequency conditions use the lens MTF different trade-offs. The special case of (3) above, which is of great practical importance, can be obtained by placing a field diaphragm through hole in one arm, such as the upper arm of an interferometer system, and placing a more complicated photomask in the lower arm. Equation 12 can be written as: r (^. Y) = ΣΣh (K.Oel2'ίt ^ Ie'2 ^ lt ^ '^ yc〇s (4mw :) *; *;. Ρ: *-· (17)- Ι + ΣΣ ^ (Κ ^ Ο ^ η〇 ^ κ κ κ ', = ι + ΣΣιχΚχ) ^ β &lt; 2κΐ &gt; + ΣΣ ^ (κ ^ (κ ^^^ ky kf Jt, ^ 卞 Equation 17 is assumed The field 阆 is sufficiently large that the frequency violation of the Fourier component related to ^ is relatively small. More specifically, when the total of Equation 17 is used, the frequencies can be changed to appropriate functions, limiting the circle shape to the field limit. Area: That is: Printed by Shenyang Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives (please read the notes on the back before filling out this page) sin: -A: &gt; /-kxik'y-ky) d ^ where a 柏 b For the linear dimension of the field orchid, use the equivalent value of Da and Uy in the Fourier transform dual. This result still does not fully solve the constraint problem intended by Equation 16. 1-2 — scale of this paper Applicable to Chinese garden ladder standard (CNS) Λ4 specification (210X297 mm) 440925 Α7 Β7 Printed by I Industrial Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (25) Specifically, the Fu Lixiu coefficient is restricted, such as MidhhMd -kx.-ky), public Note that the final circular image is inconsistent. As shown above, this can be avoided by shifting the center frequency response of the optical system | i | = 0. Complete this. One possible optical program is shown in Figure 11. See also 跸 Η ,. Effective light seals 41 and 42 are used, and the mask 41 moderately includes Jian Jun's opening of the field diaphragm. The triangle _ 71 is appropriately placed behind Guang Qin 42 to provide the angular deviation of the frequency component. Beams 7, 2, 73 provide additional information. The triangular prism 72 should use the zero __ component from the reticle 42 to point to the edge of the through hole of the lens 33. In this cushion, the three rough mirror 71 has a tactile or overall tilt or It is biased towards the frequency components accepted by the w, iu lens system. In the specific example shown in the figure, the three-angle selection selects the zero-space frequency beam out of the light ¥ 42, so that it just misses the first lens (33). Luo Kong. If the result is a simple field diaphragm through hole, as in the photomask, and then simplified, the non-zero Fourier coefficient of this through hole is much lower than that of the optical fiber, which can be ignored at first. The field becomes: A1〆, and the intensity is: ··. / (X, y) = | £ (.r, ^) |-= l ^ Z ^ t (K, ky) TE (kx ~ w, lnky) e12 ^ kr '·, (20) + ΣΣ ^', (Κ &gt; Κ) Τε {Κ-wIilnky) e-llxik ^ + lv) xen ^ y ky &lt;. + ΣΣ v L k · kr seconded cerium wmt, so For example, the positive kx of p is accepted by the lens system, and finally — μ 2 5 — This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 &gt; α 97 mm) (Please read the note f on the back before filling in this Page) ordered. LilLUUU: printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 440925 · A7 _.. _ B7_____ V. Description of the invention (26) Constrained to form a sense of interest __ was removed. It should be noted that many variables can be used when using the three cymbals shown in FIG. For example, the three-boiler can be placed in front of the reticle; the appropriate diffraction grating used in transmission or inverse elbow can be used instead; the Fourier plane filter (such as the focus of the first lens (33) in the optical frame) can be shaken, only Follow the appropriate support group for the mask transmission. The pattern calculations that can occur using this concept are shown in Figure 13. The upper left box (labeled Al 〖freq ·) ^ shows the table using all reasonably available interferometer exposures. This box is included for comparison, indicating that the best pattern obtained by multiple exposures is basically the same as the upper left box in Figure 4. The middle left panel shows the results of the double exposure (imaging interferometer exposure, different exposures, and optical exposure). This left center cell represents a single imaging interferometer lithography (II L) exposure, using a circle 11 configuration, deviating in the y or vertical direction *, and optical exposure when traditionally different lighting is used. Both are combined with a moderate of 0.4 Transparency NA. In the example shown in the middle left panel, the exposure of the imaging interferometer should use the three 稜鏡 71 of the figure ，, for example, the backup voltage at the y-space frequency of 0.5. According to a more specific example, this bias is then effectively hidden by the interferometer aperture (for example, the mirror 45-48 in Figure 7), and finally an appropriate frequency distribution of the pattern is generated. The reticle with the circular shape is appropriately placed on one arm of the optical system, and the opening through hole for field division is appropriately placed on the other arm. For example, as shown in Fig. 13, the round type has a period of Px = 12 CD in the horizontal (X) direction, while

Py = 5 CD repeats. The graphical representation of the Fourier series has a frequency component »(ns / Px + my / Py). The phase normalized to C 卩 &lt; correspondence-response space frequency is 00 / ?, = 0.083. M CD / Py = 0.2, and the 铮 (n, m) supported by the noon calculus lithography can be practically achieved. Large value The current is (II, 5), that is, naax = Int, in which the function 1111 returns to the number part of the angle. -26-This paper standard is generally in the national standard (CNS &gt; A4 specification (2! OX297 mm> --------- βII .. I .. (Please read the notes on the back before filling in Simuyu) Order 440 925 Α7 Β7 Printed by the Shellfish Consumer Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs Explanation (27) copies. Select 3 稜鏡 卞 1 'to tilt the entire frequency Wlilt = 0.5. Therefore, the high spatial rate transmission leaf component' Example. 4 'is moved to the condenser cone of lens 3 3. Select M for example As shown in Figure 7, the interferometer light such as sub-45-48 will introduce the deflection Wil, so that the deflection tendency is just to cancel the deflection of the interferometer aperture increase. Continue to see the circle, the left T cell represents a similar calculation of the lens NA of 0.7. Interesting The time is that although the round shape is more full of higher NAs at the left and extreme right, the mark of the center of the bottom characteristic is more clear at the higher NA. Mostly because this characteristic is at X The higher spatial frequency components are required, which are not optimally supplied by the interferometer or imaging optical exposure. This can be corrected in the upper right box, which indicates that the Erxiutu image interferometer exposure, once at the same wtnt = o.5 At one time, X is biased to be the same as S, and it is necessary to provide more space to make sure that this feature is necessary. In addition, the results of optical exposure with different lighting and quasi-optical exposures are all using a lens NA of 0.4. Obviously the mark of this exposure More clearly. The corrugations of the horizontal cuffs are due to the fact that the lower frequency components do not show the correct harmonic phase. These components are exposed by the imaging interferometer (item 2 of Equation 19) and by the optical exposure Due to the fact that the most realistic microelectronic patterns have a small 1 in both directions, most of them must be exposed by a second interferometer. The middle grid indicates that the exposure is performed at a single low frequency (at the frequency λ / Pχ), instead of the traditional optical exposure. The result is very similar to the previous one, but the required exposure is much simpler. Finally, the lower right box indicates the exposure of the secondary imaging interferometer with the lens NA = 0.7, which is the same as that of the P1 interferometer. Calculation of exposure image. Compatible with the upper left correction, which may be round, requires three exposures, and is compatible with the complete heterogeneity of microelectronics. These examples are used to illustrate imaging interferometers and imaging systems—2 7 — This paper scale is applicable to China's standard of household standard (CNS) Λ4 specification (2 丨 〇 × 297mm) (Please read the notes on the back before filling ?? ·: This page) Order '440925 A7 • ___. _B7 _____ V. Invention Explain (28) the feasibility of light combination. There are many ways to achieve the desired result. It is extremely important that the imaging interferometer exposure is not limited to the periodic arrangement of the laws. This can be exemplified by the earlier imagery of the non-repetitive field blue, any M pattern can be described as a Fourier roll, where the repetitive period is the exposure field. Two words about the typical ULSI scale, which means that a very large number of Fourier components must be included (for example, the potential is in the 100 million spectrum). If individual Fourier components are to be exposed separately, it is obviously impractical; but interference with imaging It is not a problem to calculate the exposure, and it has the ability to deal with a large number of frequency components of the photo beam and interferometer, allowing high spatial frequencies. Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. If there is any possibility of optimization, it can be further developed in the context of the present invention. For example, the total exposure is divided into several sub-exposures, which becomes a straightforward procedure to adjust the relative intensity of these exposures. Furthermore, imagery exposure involves two (or more) optical paths, and the intensity of the beam can be adjusted in these paths. In addition, the last two frames (Figure 3) above are sometimes useful for adjusting the lens NA between various sub-exposures. That is, the lens NA for different-tone optical exposure can be reduced to a point where only a single frequency component is used in the exposure by a simple interferometer. The intensity of the two beams in the exposure of the dry meter is equal to the intensity of each exposure. For a simple interferometer exposure (that is, only two beams; each arm has a field edit hole), the intensity is adjusted to have The quality that best meets the required graphics. Maintain specific procedures to specify and produce the masks required to define any image. It should be noted that this is a series of sub-masks, because different sub-masks need different sub-masks to form a complete image in different regions of the frequency. NA, and the degree of facsimile of the required image. The above mathematics results in a functional design package. However, —2 8 ^ — This paper size applies the Chinese Family Standard (CNS) A4 standard (210X297). Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs · 4 40 92 5 · A7 _______B7_ '___ V. Invention Note (29) The complexity of the real ULSI type makes this a difficult task. In principle, the number of spatial frequencies to be copied can be as many as the prime number in the image, which is a 2 × 3〇η 2 circular image, and a CD of 〇18 microns can be as much as 2 × 10μ! See Figure I2, Another measure is to use an iris, which is made from an original mask that is fully formed. Use existing photomask manufacturing procedures with different dimming lighting, such as electronic beams to write patterns directly, and complete pattern masks (8 1) without any resolution enhancements such as serifs, auxiliary rods, or phase shifts. Behind the reticle is Mikasa (82), which tilts the wavefront that appears, with functions similar to Mikasa in Figure 11A. In addition, as shown in FIG. 11B, the three cymbals (82) are placed in front of the mask (81). This introduces a bias towards wbiiS at the spatial frequency of the image created by the optical system (lenses 33, 34). The intensity pattern on the wafer surface is expressed by the following formula: (21) J (x, y) =

I In addition to wafer imaging, this intensity pattern can be used for exposing the mask blank (83), and then developing and patterning to form a sub-mask. Precisely, this sub-mask is suitable for the configuration shown in Figure 11 to produce the required Fourier components on the wafer. Frankly speaking, this relationship is satisfied: (22) 2w = wbijs can easily produce the appropriate spatial frequency on the wafer surface ° -29-This paper size applies the Chinese National Standard (CNS) A4 specification (210 * 297 cm)- ------ Order -------- Line II .. ': 1! (Please read the notes on the back before ### this page) 440925., A7 ____ B7_; _' .. 5 Description of the invention (3 0)

I Figure I4 shows the implementation of the above method and equipment, which shows the excellent match between the experiment and the modeling, and makes the modeling proper. The results clearly show that the foregoing invention leads to a significant improvement in the analysis of a given lens system. For these experiments, the present inventors used inexpensive, colorless doublet lenses. The lens reduces the aperture to only NA 0.04 to ensure a more aberration-free image. The pattern contains five matching L-shaped shapes, the central feature is lengthened to provide a separation line, and the large 10x10 CD2 box is directly close to the dense line. Repeated patterns are separated by 40 CDs, providing a highly exposed image for rigorous testing of the effect of scattered light. From this figure, the features are in the 2-p mCD. The top left image (circle MA) is the result of a conventional image (homogeneous lighting). The small features (height, spatial frequency) of the CD have not been analyzed. The lower left image (Figure 14F) indicates the modeling. The result. There is an excellent cooperation. The upper middle image (14C) shows the results of the second sequential deviation exposure, once at X Direction, the second time in the y direction. Equivalent to the dense line: spatial pattern height spatial frequency information, but lack of low frequency information. The modeling results still have a good match, pay special attention to the L-shaped corners are not printed in conjunction with the experiment ... Finally, Zuo Zhe (Figure 14A and Figure MB) shows the results of completely three sequential exposure image interferometers (IIL) and printed out the full pattern "and the model is still. · · Intellectual Property Bureau, Ministry of Economic Affairs, Shellfish Consumption ' Cooperative cooperative printing is very good. 30 — This paper size applies to China National Standard (CNS) A4 specification (210 * 297 mm)

Claims (1)

A 4〇92 δ A8 B8 C8 D8 Patent Application Scope Printed by the Central Standards Bureau of the Ministry of Economic Affairs and printed by Shelley Consumers Co., Ltd. /} 1. A two-dimensional space in a photosensitive material on a substrate is obtained by the following method: An optical configuration exposes the photosensitive material for the first time. The configuration includes a first illumination system that provides illumination of a first photomask, and is characterized by a first photomask pattern on the substrate, and A first imaging system on a photosensitive material for the first mask pattern imaging, the first exposure has a first intensity pattern; the second optical configuration is used to expose the photosensitive material a second time, having a second Intensity chirp; where each of the first and second intensity patterns has a supporting group of spatial frequencies necessary to form the two-dimensional space circular pattern; the first and second intensity patterns are combined, and thus at the photosensitivity Forming the two-dimensional space pattern in the material; and processing the photosensitive material to specifically present the two-dimensional space pattern. 2. If the method of applying for the scope of the first patent, wherein the photosensitive material is a photoresist layer, 3. If the method of applying for the scope of the first patent, where the substrate is a wafer 4. If the scope of the patent, first The method according to the item, wherein the treatment causes a physical change of the photosensitive material, so that the photosensitive seed material functions as a mask, and changes the proper properties of the substrate according to the two-dimensional space shape. 5. For the manufacturing method of item 1 of the scope of patent application, wherein the second optical configuration includes a second lighting system to provide lighting for the second photomask, which is characterized in that —3 1 — This paper uses medium solid National Standards (CNS) A4 (210X297 mm) Please read the note on the back of page 6 h. Binding, line 440925 A8 B8 C8 D8 Printed by the Central Consumers Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives. The top two light army round type on the substrate, and the second imaging system for the second photomask for the Cui imagery &amp; 6. If you apply for the 5th ¾¾¾¾¾, Wu Shen The dead light is taken ... Two y...; H; 'and the third lighting system is provided to provide early lighting of the third light, which is specifically, the third light army on the substrate And the third imaging system for the third optical army pattern imaging, using an electric field equivalent to the second optical single pattern and the third aperture pattern, coherent drying * provided on the photosensitive material Intensity pattern. 7. If the method of applying for the scope of the patent No. 6 method, wherein the first Languang army is substantially the same as the second light army. 8. If the method of applying for the scope of the first item of the patent scope, wherein the first and second exposure steps are performed sequentially in time. 9. If applying for the manufacturing method of 専 Li Fan Yuan, wherein the combining step includes a method of using an orthogonally polarized illumination source to substantially simultaneously increase the first and second intensity patterns of the exposure. 10. For example, the disadvantageous method of the first patent application, in which the combination step includes a method of using different lighting hues to substantially increase the exposure of the first and second intensity patterns at the same time. 11. For example, the manufacturing method of the first paragraph of the patent application, wherein the first exposure step includes a manufacturing method of using the first optical lithography exposure system with an illumination source at a first wavelength λ, to expose it. The lower spatial frequency component of the two-dimensional spatial pattern is provided to the photosensitive sample material for the first numerical aperture NA, where the spatial frequency amplitude of the low spatial frequency component is lower than about NA, / λ, . • One 3 2 — China National Standards (CNS) A4 specifications (210 × 297 mm) are used for each paper size (please read the note on the back and then ^^ 4 pages) Order 440 925 if, C8 _ _ D8_. 6. The scope of patent application 12. If the manufacturing method of the first scope of patent application, wherein the second exposure includes the manufacturing method, use a multi-beam interferometer exposure to provide a comparison of the two-dimensional space pattern of the photosensitive material. The 髙 spatial frequency component, wherein the spatial frequency amplitude of the 髙 spatial frequency component is greater than approximately NA, / Xi, and the second exposure is characterized by: the intensity of the substrate has a spatial frequency, Is determined by the angle at which the multiple beams are incident on the photosensitive material of the substrate; the amplitude of the intensity circular pattern in the photosensitive material is determined by the exposure agent used in the second exposure; and I 'the The strength profile is relative to the reference phase on the substrate. 13. If the manufacturing method of the first scope of the application for a patent, wherein the second exposure includes a manufacturing method, use an imaging interferometer exposure to provide the photosensitive material with a higher spatial frequency component of the two-dimensional spatial pattern, where The spatial frequency amplitude of the higher spatial frequency component is greater than approximately NA, / λ, where the characteristics of the second exposure are: at the central spatial frequency component of the central spatial frequency: the amplitude of the central spatial frequency component , Established by the exposure dose used for the second exposure; the phase of the central spatial frequency component; the range of the higher spatial frequency component, centered on the spatial frequency within at least a part of the central spatial frequency, adjusted Its amplitude and phase define the two-dimensional space type within the photosensitive material on the substrate. 14. If the manufacturing method of the scope of application for item 13 of the patent application, wherein the exposure of the imagery stem is produced by the optical system of the imagery meter, the optical system includes: -33-This paper standard uses the Chinese National Standard (CNS) Α4 Xie Ge (210 × 297 mm) ~~ (Please read the note on the back and fill in the page first) Thread: Central Printing Department of the Ministry of Economic Affairs, Work and Consumption ^: Social Printing 5 2 9 ο 4 ABCD Central Ministry of Economic Affairs Quasi-station shellfish consumer combination; ^ company printing VI, patent application Fangu 'space homogeneous illumination source at wavelength λ2; second optical imaging system, number aperture να2 and magnification μ2: the second mask counting mechanism, relative The polar angle fixed to the coordinate system of the imaging optical system [arcsin [M2sin (e2)], &lt; l &gt;2]; the optical mechanism for illuminating the second photomask is rotated at a position relative to the coordinate rim. The polar angle (arcsin [Sin (e3) / M2], φ2) has a substantially uniform plane wave; the substrate mounting mechanism is at a polar angle (-Θ3, Φ2) relative to the coordinate system; the optical mechanism guides the reference plane wave through the first Three photomasks to divide the exposure area on the substrate The third mask is imaged on the substrate, and the zero-order spatial frequency of the image with respect to the polar angle (· θ3, φ2) of the coordinate system is incident on the substrate, and the second mask is incident on the substrate. The illumination and the light field obtained by the second optical imaging system are coherent; an alignment mechanism for adjusting the relative optical path length of the substrate or the optical system to ensure an appropriate relationship between the frequency components of the first and second exposures; The second exposure on the substrate is characterized by two off-center spatial frequencies along the direction shown by Φ2, at + [sin (e2) + sin (e3-92)] / λ2 and-[sin (e2 ) + sin (e3-e2)] / λ2; The spatial frequency component is within the at least part of the radius NA2 / λ2 circle within the space frequency space centered at each of the off-center spatial frequencies; where at least one The amplitudes and phases of the spatial frequency components in the portion essentially duplicate the desired pattern on the substrate. 15. If the manufacturing method of the scope of application for item 14 of the patent, where the angle is 02- * 3 4 ~ The standard of the paper method is applicable «National Standards (CNS) A4 (2 丨 0X297 mm) ------ --- ^ II,,-(please read the notes on the back and then fill in page W4) Order 440925 B8 C8 D8 / Seal of the Consumer Consumption Cooperative of the Central Ministry of Economic Affairs of the Ministry of Economic Affairs «. β3 / 2, so that the photosensitive material is illuminated symmetrically on the substrate, wherein the angle of the centerline of the second optical imaging system to the substrate is · θ3 / 2, and the centerline of the imaging optical mechanism is opposite to The angle of the substrate is + θ3 / 2, and the center spatial frequency is + 28ίη (θ3 / 2) / λ2 and 1 • 2sin (e3 / 2) / λ2 in the direction shown by φ2. The method of item 14, wherein the angle 02 is fixed at 0, so the second mask and the substrate are perpendicular to the center line of the second optical imaging system, and the center spatial frequency is + in the direction shown by φ2, respectively. 25ίη (θ3) / λ2 and -2sin (63) / X2. 17. The manufacturing method according to item I3 of the scope of patent application, wherein the imaging exposure meter is generated by using the imaging interferometer optical system, including: part of the spatial coherent illumination source, at a wavelength λ2 with coherence of 0; second optical imaging The system has several apertures NA2 and multiples M2; the polar angle of the second mask mounting mechanism relative to the coordinate system fixed to the second spare optical system (-arcsin [M2sin (02)], φ2); at the polar angle The optical mechanism used to illuminate the second reticle is centered at a distance relative to the coordinate system (-arcsin [sin (Θ3) / Μ2], φ2); the substrate mounting mechanism is installed at the pole opposite to the coordinate system Angle (θ2, φ2); guide the reference wave to pass through the optical mechanism of the third mask to determine the exposure area on the substrate, and image the third mask on the substrate, relative to the coordinates The polar angle of the system (θ3, φ2), the zero-order spatial frequency of the imaging incident on the substrate, interferes with the illumination of the second mask and the light field obtained by the second optical imaging system; -35-paper Zhang Jiuxiao used the Chinese National Kneading Rate (CNS) Α4 specification (21 0X297mm} I. ^ __ 一 ------- like ------ 1Τ ------ jins (please read the precautions on the back before filling the page) Central Ministry of Economic Affairs Moubei Beigong Consumer Cooperative Printing Co., Ltd. • 440 925 as, B8 C8 D8 6. Apply for patent range alignment mechanism to adjust the position of the substrate or the relative optical path length to ensure the frequency components between the first and the second exposure The appropriate relationship is caused by the second exposure on the substrate, which is characterized by two off-center spatial frequencies along the direction shown by φ2 at + C sin (e2) + sin (e3-02)] / person 2 And -Csin (02) + sin (e3-02)] / λ2: the spatial frequency component, at least the radius (1 + σ 2) Ν 2 / λ2 circle in the spatial frequency space centered at each of the off-center spatial frequencies Within a part; where the relative amplitudes and phases of the spatial frequency components in at least that part of the circle, in essence, pay attention to the required pattern on the substrate. IS. If the method of the 17th scope of the patent application, The angle θ2 is fixed at θ3 / 2, so that the photosensitive material is illuminated symmetrically on the substrate. The angle of the center line of the second optical imaging system to the substrate is -θ3 / 2, and the angle of the centerline of the imaging optical mechanism to the substrate is + β3 / 2, and the center spatial frequency is + 28ίη (θ3 / 2) / λ2 and -2sin (03/2) ) / X2 〇19. If the method of applying for the scope of patent application No. 14 wherein the angle is fixed at 2 with 0, the second mask and the substrate are perpendicular to the center line of the second optical imaging system, and The center space frequency is + 25111 (03) / \ 2 and -23111 (93) / person 2 along the direction shown by φ2. · Only 20. If the manufacturing method of item M of the patent application scope, wherein the second mask and the third mask contain substantially the same spatial pattern, and the second optical imaging system and the optical mechanism provide substantially equivalent The number of apertures makes the two-dimensional pattern of the photosensitive material on the substrate characterized by a reduced spatial pattern of the photomask, hovering at a spatial frequency component of a degree of spatial frequency of 23ίη (θ2 / ϊ) By. -30 — This paper size is in accordance with China Standards (CNS) Α4 (210X297 mm) ~ (Please read the precautions on the back before filling the title page) Thread 4 4092 5 A8 B8 C8 D8 Economic Central Bureau of Standards Bei Gong Consumer Co., Ltd. VI. Patent Application Fan Garden 21. The manufacturing method of item 17 in the scope of patent application, wherein the second mask and the third mask contain substantially the same spatial pattern, and the second optical image The system and the optical mechanism provide a substantially equivalent chirped aperture, so that the two-dimensional pattern on the photosensitive material on the substrate is characterized by a reduced spatial pattern of the optical army, in order to measure the space at the spatial frequency. Frequency component hoverer. 22. If the method of applying for the scope of patent application No. 14 further includes a housing, wherein the second and third photomasks are configured such that the amplitude and phase of the spatial frequency component obtained by the photomask and the frequency space region The description in the final image is substantially the same without any constraints on the amplitudes and phases of the spatial frequency components obtained in the second optical system and other frequency space regions not collected by the optical mechanism. 23. If the manufacturing method of the scope of patent application No. 17 further includes a shell, wherein the second and third light forces are configured such that the amplitude and phase of the space frequency component obtained by the light force through the illumination are related to the frequency space The description in the final image in the region is substantially the same without any constraint of the amplitude and phase of the spatial frequency component obtained in the second optical system and other frequency space regions not collected by the optical mechanism. 24. If the manufacturing method according to item 14 of the patent application scope further includes a housing, wherein the second and third photomasks are configured such that the amplitude and phase of the spatial frequency component of the photomask obtained by the illumination are within the frequency space region The description in the final image is substantially the same, but the spatial frequency is shifted, and the optical imaging system is adjusted so that the spatial frequency is printed in the required frequency space region on the substrate, but not in the frequency space region The spatial frequency component is free. -37-. This paper size uses Chinese storehouse ladder (CNS M4 specification (210X297mm) (Please read the precautions on the back before filling in this page) AS 4 40 92 5 ___ gs _ VI. Patent Application 25. If the method of applying for the scope of patent application No. 17 further includes a casing, wherein the second and third photomasks are configured such that the amplitude and phase of the spatial frequency components obtained by the photomask and the frequency space region The last image inside is substantially the same, but the spatial frequency is shifted, and the optical imaging system is adjusted so that the spatial frequency is printed in the required frequency space region on the substrate, but not in the frequency space region There is no restriction on the spatial frequency components within the range. 26. If the manufacturing method of the scope of patent application No. 14 also includes the optical manufacturing method of the photomask, using a complete photomask and the coherent illumination imaging interferometer optical system, the optical The manufacturing steps include the following manufacturing methods: On the base material, a photo army base material coated with a photoresist is used to image a required region of the frequency space, at least a part of which is located on a substrate surface; then, the photomask is processed. Germ wood , Develop the photoresist, and transfer the optically made pattern to the photomask. 27. For example, the manufacturing method of item 14 in the scope of patent application, wherein the two-dimensionality of the second photomask The structure included in the pattern, whose edges are mainly oriented in the orthogonal directions X and y, so that it is beneficial to align the polar corner in the X direction, and contains the height space of a small structure with a small dimension along the corresponding X axis. Frequency; the third exposure along the orthogonal y-axis is aligned to Φ2, including the spatial frequency of the height caused by a small structure with a small dimension along the corresponding y-axis, so that the spatial frequency coverage of the spatial pattern deployed on a straight line reaches the maximum 28. The manufacturing method according to item 14 of the scope of patent application, wherein the structure included in the two-dimensional pattern of the second photomask has edges mainly oriented in orthogonal directions X and y, thereby making it favorable to the X direction. Aim at this polar angle φ2, inclusive—3 8 — This paper size is applicable to China National Standard (CMS) A4 * t grid (210 × 297) ΰ 'Central Bureau of Standards of the Ministry of Economic Affairs β 工 工 消费 合 々 社 印 印 4. 92 92 5 A »· B8 C8 D8 _. The height and spatial frequency of small structures with small dimensions along the corresponding X axis; and the third exposure along the orthogonal y axis is aligned with Φ2, which includes the spatial frequency of 髙 caused by small structures with small dimensions along the corresponding y axis, so that The spatial frequency coverage of the spatial pattern deployed in a straight line reaches the maximum. 29. If the method of applying for the scope of patent application No. 22, also includes: aligning the off-center spatial frequency of the second exposure along the X frequency axis , To accommodate the high spatial frequency caused by the small structure along the small dimension in the corresponding X-space axis; and the off-center space of the third exposure. The frequency is aligned along the orthogonal y-frequency axis, and the tolerance is in the small dimension at The high spatial frequency caused by the small structure corresponding to the y-space axis makes the spatial frequency coverage of the spatial pattern of the straight line deployment the largest. 30. For example, the manufacturing method of item 23 of the scope of patent application, further includes: aligning the off-center spatial frequency of the second exposure along the X-frequency axis to accommodate small structures along the small dimension that correspond to the X-space axis髙 the spatial frequency of the third exposure; and align the off-center spatial frequency of the third exposure along the orthogonal y-frequency axis to accommodate the high spatial frequency caused by the small structure along the small dimension at the corresponding y-space axis, so that the straight line The spatial frequency coverage of the deployed spatial pattern is the largest. 3 1. According to the manufacturing method of item 24 of the scope of patent application, it also includes: aligning the off-center spatial frequency of the second exposure along the X-frequency axis to accommodate small structures along the small dimension along the corresponding X-space axis. Gao spatial frequency primed; and -39-- * ring _ ϋ sheets scale Zhi neutralized with a country engaged ratio (CNS) said A4 format (210 &gt; &lt; 297 mm) '(please Wen reading the back surface of the considerations again (Fill in page t)-= &amp; line 4 40 ^ 2 5 Aj., C8 _ D8 6. The scope of the patent application makes the off-center spatial frequency of the third exposure aligned along the orthogonal y frequency axis, and the tolerance is small. The spatial frequency caused by the small structure with the dimension in the corresponding y-space axis makes the spatial frequency coverage rate of the spatial layout of the straight line the largest. 32. If the manufacturing method of the scope of application for patent No. 25, further includes: aligning the off-center spatial frequency of the second exposure along the X-frequency axis, tolerating small dimensions caused by small structures along the corresponding X-space axis The high spatial frequency of the third exposure; and aligning the off-center spatial frequency of the third exposure along the orthogonal y-frequency axis to accommodate the chirped spatial frequency caused by a small structure with a small dimension in the corresponding y-space axis, so that The spatial frequency coverage of the deployed spatial pattern is the largest. 33. The manufacturing method according to item 1 of the patent application, wherein the first exposure and the second exposure are derived from a single coherent radiation source. --------- install ------ order ------ line- /! .X) ... I J--(Please read the notes on the back before filling in the negative) Ministry of Economic Affairs, Central Government Bureau®: Gongqing Feihe ^ Sheyin «. 40 — This paper size is based on the Chinese National Standard (C» S) A4 (210X297 mm)