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TW449672B - Process and apparatus for manufacturing photomask and method of manufacturing the same - Google Patents

Process and apparatus for manufacturing photomask and method of manufacturing the same Download PDF

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Publication number
TW449672B
TW449672B TW087121685A TW87121685A TW449672B TW 449672 B TW449672 B TW 449672B TW 087121685 A TW087121685 A TW 087121685A TW 87121685 A TW87121685 A TW 87121685A TW 449672 B TW449672 B TW 449672B
Authority
TW
Taiwan
Prior art keywords
mask
pattern
photomask
manufacturing
substrate
Prior art date
Application number
TW087121685A
Other languages
Chinese (zh)
Inventor
Nobutaka Magome
Naomasa Shiraishi
Original Assignee
Nippon Kogaku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35667997A external-priority patent/JP2001092103A/en
Priority claimed from JP36002797A external-priority patent/JP2001092104A/en
Priority claimed from JP2535798A external-priority patent/JP2001092108A/en
Application filed by Nippon Kogaku Kk filed Critical Nippon Kogaku Kk
Application granted granted Critical
Publication of TW449672B publication Critical patent/TW449672B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

According to the present invention, the process for manufacturing photomask is characterized in dividing into & times lengthwise and crosswise the parent pattern 36 which is enlarged by & times the original pattern 27 enlarged by β times from the circuit pattern 35 and forming the parent patterns P1 to PN on the data, drawing parent patterns P1 to PN at the same proportion onto the substrate with electron beam plotting device, etc. to make master reticules R1 to RN, and transcribing the miniature picture of the parent patterns of the master reticules R1 to RN onto the substrate while performing combination to manufacture the working recticle 34. By means of the manufacture process, the manufacture of original pattern can be done very precisely in a short time.

Description

449672 Λ 7 117 經嫡部中央標卑局負工消费合作社印s 五、發明説明 ( ( ) I 1 發 明 說 明 I 1 I r 産 業 上 之 利 用 領 域 ] 1 1 本 發 明 為 有 關 - 種 光 罩 製 造 方 法 及 裝 置 > 以 及 裝 置 [ 先 \ (d e v 1 c e ) 之 製 诰 方 法 其 在 於 利 用 光 蝕 刻 技 術 以 製 造 閱 讀 1 例 如 半 m m 積 體 電 路 攝 影 元 件 (電菏耦合裝置等） 液 背 而 1 之 ί 晶 顯 示 元 件 或 薄 糢 磁 頭 等 撤 型 裝 置 時 f 作 為 原 版 圖 案 1 事 i 所 使 用 的 光 單 之 m 造 方 法 及 裝 置 > 以 及 使 用 該 光 罩 製 造 項 再 \ 方 法 之 裝 置 製 造 方 法 者 〇 寫 本 I [ 習 知 之 技 術 1 Η 、_·-· 1 I 在 於 製 造 半 導 體 積 體 雷 路 等 裝 置 時 乃 是 使 用 其 所 形 1 1 1 成 的 原 版 圖 案 ， 將 所 要 形 成 的 電 路 圖 案 放 大 為 例 如 4 - -5 1 1 倍 程 度 之 光 罩 i 經 由 縮 小 投 影 光 學 % 統 * 以 缩 小 投 影 方 1 訂 式 將 該 光 罩 的 圖 案 轉 印 於 晶 Η 或 玻 璃 板 等 被 曝 光 基 板 上 J 者 0 像 這 種 光 罩 _ 案 轉 印 時 所 使 用 的 就 是 曝 光 裝 置 y 而 I 1 步 進 重 複 方 式 的 缩 小 投 影 型 曝 光 裝 置 所 使 用 的 光 罩 9 也 1 I 被 稱 為 掎 模 0 1 1 線 1 以 往 9 這 種 光 罩 是 用 電 子 束 描 畫 裝 置 或 雷 射 光 束 描 盡 裝 置 在 所 定 基 板 (半成品）上 描 盖 原 版 圖 案 所 製 造 者 Ο 亦 1 1 即 ， 在 基 板 上 形 成 掩 模 材 料 (¾ 1光模） j 塗 布 抗 蝕 m 後 1 1 用 電 子 束 描 畜 裝 置 或 田 射 光 束 描 棗 裝 置 描 書 原 版 _ 案 〇 妖 i IHN 後 經 該 坑 独 劑 的 顯 像 處 理 ， 做 蝕 刻 加 X 處 理 等 而 由 ’丨 I 該 掩 模 材 料 形 成 為 原 m 圖 案 者 〇 此 時 9 設 若 使 用 該 光 罩 1 1 的 縮 小 投 影 m 曝 光 裝 置 的 縮 小 倍 數 為 1/ β 倍 時 描 畫 於 1 I 該 光 罩 的 m 版 圖 案 ， 是 可 用 裝 置 圖 案 放 大 β 倍 之 圖 案 S 1 I -3 1 1 1 1 本紙張尺度適用中國國家標隼（CMS ) ( 210Χ2Μ公ίΜ ^ / 2 449672 Λ7 經來-部中央標隼扃負工消f合作杜印製 五、發明説明 ( > ) [ ! 因 而 ， 在 描 畫 裝 置 所 産 生 的 描 畫 誤 差 在 裝 置 上 大 致 编 小 1 1 1 為 1 / β 倍 〇 從 而 9 在 實 質 上 可 在 於 裝 置 上 形 成 具 描 盡 1 1 裝 置 的 解 析 能 力 之 大 致 上 1 / β 倍 解 析 能 力 之 圃 案 0 in 1 先 1 如 上 所 述 » 以 往 的 光 罩 m 販 圖 案 是 用 電 子 束 描 蛮 裝 置 讀 1 1 或 雷 射 光 束 描 赉 裝 置 所 描 害 者 〇 這 些 描 害 裝 置 是 按 昭 控 IV 而 1 ! 之 ί I 制 用 電 _ 來 的 描 盡 資 料 y 直 接 描 蛮 其 原 版 圖 案 〇 妷 而 江 1 事 最 近 的 大 型 積 體 電 路 (LSI)等， 已需要大商積化之同時， 項 再 1 其 精 細 度 及 稹 體 度 也 曰 益 升 高 因 而 其 曝 光 所 需 的 光 罩 填 1 准 本 原 m 圖 案 也 大 商 積 化 t 並 精 細 化 〇 且 在 光 罩 上 > 也 曰 使 T\ >- 1 1 用 到 為 了 防 止 在 雙 重 曝 光 用 中 不 霖 要 圖 案 之 轉 印 而 設 有 1 1 1 修 Έ 圖 案 之 掩 模 t 及 在 相 鄰 接 圖 案 之 間 設 有 移 相 器 的 所 1 ! 謂 移 相 掩 模 等 而 在 這 特 別 的 光 罩 中 1 其 描 畫 資 料 量 1 有 fcb 其 他 光 罩 為 多 之 傾 向 Ο 藉 此 1 在 描 害 裝 置 中 所 需 i 要 的 製 造 光 罩 闬 之 描 奎 資 料 * 會 變 成 m 大 數 量 0 1 1 因 此 » 以 描 憲 裝 置 要 描 畫 1 張 光 罩 原 版 圖 案 所 需 之 1 1 描 害 時 間 » 在 最 近 已 達 10 小 時 到 2 4小 時 0 如 此 描 盡 時 間 1 1 腺 I 之 長 時 間 化 為 光 罩 製 造 成 本 上 升 之 一 因 素 Ο 有 m 於 這 一 點 » 在 電 子 束 描 棗 裝 置 中 9 需 要 對 電 子 束 1 | 特 有 的 散 射 所 影 響 之 鄰 位 效 應 做 修 正 * 且 & 需 要 對 因 基 1 i 板 表 面 的 帶 電 所 引 起 的 在 周 圍 之 電 場 不 勻 做 修 正 0 因 此 » 要 按 照 設 計 描 畫 原 販 圖 案 時 * 必 需 預 先 以 各 種 條 件 對 ί I 描 亲 位 置 的 誤 差 等 進 行 測 定 > 當 描 盡 時 * 可 安 定 且 高 精 1 1 度 的 進 行 複 雜 之 修 正 〇 然 而 ， 在 如 上 述 的 長 時 間 之 描 盖 t 1 時 間 中 * 要 繼 壤 進 行 這 種 安 定 且 高 精 度 的 複 雜 修 正 的 確 1 Ι _ 4 1 1 1 1 本紙張尺度適用中國國家標隼（CNS ) 枯UlOxNDHi ) 4 49 6 7 2 a/ Η 7 經斌部中央標準局負工消費合作社印¾ 五、發明説明（ -V ) 1 1 1 困 難 j 而 會 在 描 畫 中 9 産 生 描 蜜 位 置 的 偏 移 等 不 妥 情 形 1 1 I 〇 又 1 雖 妖 也 可 中 薛Γ 描 塞 而 做 校 準 » 但 因 而 使 整 楢 描 1 1 盖 時 間 更 加 延 長 實 為 不 妥 0 1 先 1 因 此 今 後 半 導 am 腊 裝 置 等 圖 案 尺 度 更 為 精 細 化 者 對 閲 讀 1 i 1 Η 光 罩 原 版 圖 案 的 描 害 時 間 過 於 冗 長 位 置 精 度 會 而 之 t \ 有 偏 差 » 恐 有 不 能 獲 得 所 需 描 畫 精 度 之 虞 〇 而 且 > 在 控 注 i t 事 制 用 電 腦 中 的 描 畫 資 料 量 > 也 逐 漸 成 為 要 在 1 描 畫 項 i | 中 使 用 者 有 所 困 難 程 度 之 鼸 大 數 量 〇 寫 1 本 —- 方 面 * 在 雷 射 光 束 描 軎 裝 置 中 > 是 使 用 紫 外 段 的 雷 頁 1 1 射 光 束 描 軎 原 販 圖 案 1 而 可 使 闬 可 獲 得 比 電 子 束 描 畫 裝 1 t 置 較 高 解 析 能 力 之 杭 蝕 劑 9 並 且 沒 有 因 散 射 所 引 起 的 1 1 鄰 位 效 應 之 優 點 〇 麸 而 * 雷 射 光 束 描 盡 裝 置 的 解 析 能 力 1 1 丁 是 tb 電 子 束 描 蛮 裝 置 的 解 析 能 力 較 逯 〇 又 雷 射 光 束 描 畫 1 裝 置 也 是 以 直 接 描 畫 原 版 圖 案 的 方 式 9 因 而 描 番 資 料 量 1 i 也 會 逐 m 增 加 到 龐 大 數 量 > 而 産 生 資 料 處 理 之 困 難 9 旦 i I t 描 畫 時 間 曰 成 為 很 長 久 ) 恐 有 因 描 軎 位 置 的 偏 移 等 而 \ 1 線 不 能 獲 得 所 需 描 畫 精 度 之 處 1 此 外 * 當 製 造 光 罩 原 販 圖 案 時 也 可 考 慮 使 用 光 學 式 1 | 投 影 曝 光 裝 置 9 將 所 定 圖 茱 轉 印 於 其 光 罩 用 基 板 上 y 但 1 1 如 在 其 轉 印 時 所 使 用 的 投 影 光 學 糸 統 有 失 真 或 轉 印 線 寬 \ i 度 均 勻 性 的 不 勻 等 畤 1 其 原 販 _ 案 的 精 度 會 降 低 〇 1 | 又 將 光 罩 實 際 裝 在 投 影 曝 光 裝 置 > 介 由 投 影 光 學 % 統 1 I 將 該 光 罩 圖 案 投 影 於 晶 Η 等 基 板 上 時 如 該 投 影 光 學 糸 i 1 統上殘留箸失真等時，在詼基板上會受到 -5 - 歪 曲 圖 像 的 曝 光 1 i 1 1 1 本紙張尺度適用中國國家標率（CNS ) Λ4规枋（2】〇x29h>^ ) 4496 7 2 Μ Η7 經減部中央標隼局負工消費合作社印ii 五、發明説明 ( 4 ) 1 1 » 而 産 生 重 疊 誤 差 等 不 妥 情 事 〇 而 且 投 影 光 學 % 统 的 1 1 I 失 宾 等 成 像 持 性 m 疋 按 每 投 影 曝 光 裝 置 各 有 微 妙 的 差 異 1 1 > 因 而 如 可 能 的 話 t 最 好 是 可 對 於 每 投 影 曝 光 裝 置 if、 1 先 1 的 投 影 影 像 加 以 修 正 〇 閱 1 背 I 再 者 > 最 近 的 半 導 體 ntt 積 SUIt 體 電 路 之 市 場 動 向 曰 疋 朝 向 於 所 而 1 之 1 I 謂 特 定 應 用 積 體 Bit 電 路 (以下稱A S I C) 或 % 统 大 型 積 體 電 路 注 意 1 1 1 (以下稱L S I )的多品種少量生産型之裝置， 且這種裝置在 項 再 1 製 造 上 從 訂 貨 到 交 貨 的 期 間 tt 被 要 求 箸 愈 短 愈 好 〇 因 此 1 本 ) 當 製 造 這 種 裝 置 時 » 首 先 要 在 短 期 間 内 製 成 為 製 造 裝 T\ '—- 1 1 置 用 ♦ 形 成 有 原 版 圖 案 之 光 罩 (工作掩模）， 而 用 該 光 罩 1 ! I 在 短 期 間 製 成 裝 置 〇 1 1 而 且 最 先 XUf m 的 裝 置 Θ 疋 要 經 過 例 如 20次 以 上 的 曝 光 工 1 ΐ 丁 I 程 才 能 TC 成 〇 因 而 > 要 製 造 一 種 類 裝 置 也 要 有 和 其 曝 光 X 程 數 柑 同 程 度 Η 數 之 光 罩 〇 且 > 上 述 雷 射 光 束 描 畫 裝 1 1 置 或 電 子 束 描 畫 裝 置 在 aa 卑 位 時 間 内 之 處 理 能 力 很 低 > 要 1 1 描 畫 1 Η 光 罩 有 時 也 得 費 時 1 天 以 上 〇 因 此 ) 在 以 往 要 1 1 線 t 描 軎 1 種 類 裝 置 而 在 製 造 上 所 使 用 的 全 部 光 罩 原 販 圖 案 時 y 在 整 體 上 需 要 得 長 的 時 間 > 而 要 縮 短 1 種 類 裝 置 之 1 | 製 造 時 間 簧 有 困 難 〇 1 1 又 由 於 在 整 體 上 描 軎 時 間 ^s f=l 很 長 9 故 1 種 類 裝 置 在 製 I 造 上 所 使 用 的 光 罩 之 製 造 成 本 日 很 高 > 其 結 果 7 該 裝 置 1 1 的 製 造 成 本 也 很 高 〇 1 1 並 η * 像 這 揷 裝 置 的 品 種 是 廣 泛 到 許 多 品 種 » 要 將 全 1 I 部 需 要 製 造 的 光 罩 原 販 -6 鬮 案 分 別 用 雷 射 光 束 描 金 裝 置 或 1 1 1 1 1 本紙張尺度適用中國國家標隼（CNS ) ( 210X2W公尨） 4496 72 Λ7 Λ7 Η 7 經"-部中央標象局負工消費合作社印繁 五、發明説明 ( ) * 1 I 電 子 束 描 害 裝 置 來 描 書 者 在 時 間 上 顯 得 越 趨 困 難 0 1 1 1 ( 發 明 欲 解 決 之 間 題 ] 1 1 本 m 明 第 1 目 的 是 提 供 種 光 罩 之 製 造 方 法 其 可 ih 1 1 1 在 短 時 間 内 > 高 精 度 的 形 成 葭 版 圖 案 者 〇 間 讀 1 Jl：. 1 本 發 明 第 2 目 的 是 提 供 一 種 光 罩 的 製 造 方 法 4 其 俗 在 而 之 1 I 於 使 用 光 罩 的 投 影 曝 光 裝 置 中 * 其 投 影 圖 像 的 所 定 成 像 λί. 1 1 事 { 待 性 有 所 劣 化 時 t 可 將 該 成 像 特 性 在 實 質 上 加 以 修 正 者。 再 1 本 發 明 第 3 g 的 是 提 供 —- 種 光 罩 的 製 造 方 法 > 其 % 在 1 本 於 製 造 光 罩 之 際 ， m 使 用 投 影 曝 光 裝 置 時 i 如 其 所 使 用 、> ! I 的 投 影 光 學 % 統 的 所 定 成 像 特 性 有 所 劣 化 時 9 可 將 該 成 I 1 像 待 件 在 實 質 上 加 以 修 正 者 0 1 1 本 發 明 第 4 的 是 提 供 種 光 罩 的 製 造 方 法 其 係 將 j 訂 可 提 供 製 造 AS I c或 % 統 L S I等多品種少量生産的裝置時所 使 用 的 光 罩 Λ 以 短 時 間 a 低 成 本 製 成 者 Ο 1 1 本 發 明 第 5 目 的 是 提 供 種 製 造 裝 置 » 其 係 可 實 施 上 1 I 逑 光 罩 的 製 造 方 法 者 Ο 1 1 線 1 本 發 明 第 6 S 的 是 提 供 一 種 裝 置 的 製 造 方 法 9 其 换 使 用 上 逑 光 罩 的 製 造 方 法 7 以 形 成 更 為 高 精 度 的 裝 置 圖 案 I 1 者 0 1 1 本 發 明 第 7 百 的 曰 疋 提 供 種 裝 置 的 製 造 方 法 其 偽 使 1 . 1 用 上 述 光 罩 的 製 造 方 法 } 可 將 多 品 種 少 璧 生 産 的 裝 置 i 1 I 在 短 時 間 内 m 成 者 〇 1 1 ( 發 明 之 解 決 手 段 ) 1 I 為 達 成 上 述 百 的 9 本 -7 發 明 第 1 光 罩 製 造 方 法 是 在 於 形 I 1 ! 1 1 本紙張尺度適用中國國家標準（CNS ) Μ規格（2】0Χ2«Π公甘） 449672 Λ7 1Π 經漭部中央標伞局只工消费合作社印聚 五、發明説明 ( y ) 1 i 成 轉 印 用 m 案 ¢7) 的 光 罩 之 製 造 方 法 中 > 將 轉 印 用 圖 案 1 1 所 放 大 的 圖 案 分 割 為 多 數 Μ 母 掩 模 (δ 1， -RS) 之 圖 案 9 I 1 而 在 光 罩 用 基 板 ⑷ 的 表 而 9 將 多 數 Η 母 掩 模 is 1 ^ -RN) 匾 /—V Hi 1 先 1 案 的 编 小 圖 像 一 商 併 圖 一 面 依 序 轉 印 者 閲 讀 1 1 依 據 此 本 發 明 畤 > 當 製 造 光 罩 之 際 其 例 m 疋 在 光 罩 背 而 I i 之 1 基 板 ⑷ 上 形 成 掩 模 材 料 的 薄 膜 * 在 其 上 面 塗 布 光 阻 劑 等 包 1 事 r 光 材 料 0 然 後 t 在 感 光 材 料 上 利 用 例 如 光 學 式 縮 小 投 項 再 1 影 m 的 曝 光 裝 置 以 步 進 重 複 方 式 或 步 進 掃 描 方 式 轉 填 1 別 本 印 多 數 Η 母 掩 模 的 圖 案 之 縮 小 圖 像 後 撤 感 光 材 料 的 顯 頁 1 1 像 〇 Μ 後 以 所 殘 留 的 感 光 材 料 之 圖 案 作 為 掩 模 » 做 蝕 1 1 刻 加 工 等 i 以 形 或 所 需 之 轉 印 用 圖 案 (原版圖案）。 1 1 此 時 » 假 設 製 造 光 罩 用 的 例 如 光 學 式 曝 光 裝 置 之 縮 小 i 訂 倍 數 為 1 / a 倍 (cr為大於1 之整數、 半整數等）時 » 轉 印 j 用 圈 案 (ΰ) ' 即 原 版 Μ 案 是 被 放 大 <χ 倍 該 被 放 大 的 原 圖 1 ! 案 會 被 縱 裼 分 割 成 為 例 如 a X a Η 的 母 掩 模 之 画 案 Ο 1 I 如 縮 小 倍 數 為 % 倍 (C Κ = 5 ) 時 ， 會 準 備 5 X 5倍 的 2 5 Η 母 掩 1 1 線 楔 〇 其 結 果 * 形 成 在 各 母 掩 模 的 圖 案 成 為 將 原 版 圖 案 放 大 α 倍 後 的 母 圖 案 之 一 部 分 9 因 而 > 各 母 掩 模 圖 案 的 描 1 1 軎 資 料 量 可 減 少 到 原 來 的 1 / α 2 程 度 其 最 小 線 寬 度 m i 1 成 為 m 來 的 a 倍 0 而 ， 各 母 掩 模 的 圖 案 > 分 別 可 由 例 如 i 用 來 的 電 子 束 描 軎 裝 置 或 雷 射 光 束 描 畫 裝 置 * 在 短 時 1 1 間 内 1 以 很 少 的 偏 差 高 精 度 的 描 蛮 〇 而 a » 描 害 裝 置 所 1 1 引 起 的 描 畜 誤 差 在 光 罩 上 m 減 少 到 1 / a * 因 而 ♦ 可 更 加 1 I 提 高 原 販 圖 案 的 精 度 0 而 且 9 — Η 製 成 這 母 掩 模 後 » 1 -8 1 1 1 1 本紙張尺度適用中國國家標隼（CNS ) Λ4%秸（2ίΟΧ29*7公殍） 449672 Λ7 Η7 經米‘部中决標挲局貝工消费合作社印聚 五、發明説明（ 7 ) 1 1 可 將 這 1¾ 母 掩 模 的 圖 案 » 以 步 進 重 複 方 式 等 高 速 的 轉 印 1 1 1 到 光 罩 基 板 上 因 而 * 尤 其 是 要 m 造 多 數 Η 光 罩 時 9 可 1 1 將 其 製 造 時 間 比 起 以 往 的 個 別 由 描 害 裝 置 描 盡 之 方 式 可 1 I ! 大 幅 度 编 短 0 閱 讀 1 1 在 本 説 明 軎 中 的 厂 併 阃 J 之 語 句 不 僅 僅 是 表 示 將 背 而 1 之 1 幅 m 案 分 割 成 為 多 數 的 母 掩 模 而 將 這 些 母 掩 模 的 各 投 d ! j 1 事 Γ 影 團 像 接 合 t 以 在 光 罩 上 *s£st 兀 成 所 要 轉 印 的 幅 圍 案 之 意 項 再 1 思 而 已 也 包 含 將 --* 幅 圖 案 不 分 割 而 形 成 為 多 數 母 掩 模 1 本 ~ 而 將 這 些 母 掩 模 的 各 投 影 m 像 接 合 » 以 完 成 具 多 數 圖 1 1 案 的 光 罩 之 思 0 總 之 在 本 說 明 書 中 的 厂 併 圖 J 之 語 1 1 句 是 無 m 其 俗 由 併 圖 以 形 成 輻 圖 案 舆 否 1 而 僅 作 為 1 1 將 原 掩 模 的 各 投 影 鬮 像 接 合 的 意 思 之 用 Ο 從 而 » 例 如 要 J 訂 形 成 具 多 數 圖 案 的 光 罩 畤 r 作 為 母 掩 模 的 形 態 可 想 像 的 是 > 鬮 案 中 有 任 —. 阐 案 被 分 割 為 多 數 母 掩 模 的 形 態 * 和 1 I 各 _ 案 個 別 並 未 被 分 割 而 分 割 成 為 多 數 母 掩 模 的 形 態 〇 i | 刖 者 的 狀 況 時 * 具 有 可 統 —* 母 掩 模 形 狀 (大小）之 優 點 4 1 1 線 1 而 後 者 的 狀 況 畤 圖 案 本 身 没 有 接 缝 不 會 産 生 接 合 不 良 等 缺 m 之 優 點 〇 1 1 接 箸 * 本 發 明 第 2 光 罩 製 造 方 法 是 在 於 形 成 有 轉 印 用 1 i 圖 案 的 光 罩 之 製 造 方 法 中 將 轉 印 用 圖 案 1 或 其 i j 放 大 圖 案 树 分 別 分 割 為 N Μ (N 是2 以上的整數） 的 多 數 V 1 I Ν 母 掩 模 (R 1 ^ -RN , Q 1 〜 QN )之圖案， 而在光罩用基板（4)的 ! 1 表 面 > 將 m 些 N 組 多 數 Μ 母 掩 模 _ 案 的 圖 像 -' 面 併 圖 ~~- 1 1 而 依 序 重 « 轉 印 者 〇 一 1 1 1 1 1 本紙張尺度適用中國國家標隼（CNS ) Λ4悅枋{ 210X 297公处} 1 449672 Λ7 H7 五、發明说明（/ ) 經谛部中央標卑局員工消费合作社印奴 罩等小重後圖案 模因的-罩造缩 小而1 其1少倍子 光劑縮式®)之匾 掩，^)後光製度 缩，的將第減«電 在 m 式方目料用 母化 Μ 模於其輻 影倍片是述可的的 定光學描 1 材印 其均 掩印將大 投αατ也上量來來 例布光掃 W 光轉 ，平 母轉可可 之大><案和料原原 一 塗如進 ^感之 光所 < 些的，式 置放α圖，資為用 其而例步 U 的需 曝 1 案這速時方 裝被如模果軎成如 ,上用或像留所 層份圖成高罩之 光會例掩結描即例 際其利，圖殘成 多數用製式光垂 曝 S 為母其的度由 之在上式的所形 之次印0方數描 式案割的。案寬別 罩，料方案以而 案的轉一複多置 學 _ 分組者圖線分 光膜材複圖，， 圖光的更重造裝 光用被他案模小可 造薄光重模後等 模曝上。進製軎 如印横其 _ 掩最 ， 裂的感進掩然工 掩層罩等步要描 例轉縱，之母其案 當料其步母。加 母多光差以是由 的，會的割各.圖 ，材在以 Η 像刻 的由在誤菜其別 用時树樣分-度的 時模後置數顯蝕 組會低置圃尤鏟 造倍案同树樣程模 明掩然裝多的做 Ν 差減位模，的 製α爾。案同 2 掩 發成。光的料，。於誤度和掎而往 罩1/母案圖法α母 本形料曝組材模?}由寄幅差母因以 光為的圖母方1/各 此上材的 Ν 光掩 Η ,描大誤些，起 ，設大楔的造的 , 鬮 據⑷光塑印感為 時的可度這上比 外假放掩大製來而 依板感影轉做作 此窠，寬將板間。此數被母放罩原因 基之投疊，案(Γ圖而線可基時短 倍該铺所光到 。 (1¾先閱讀背而之注念事項再填寫本頁)449672 Λ 7 117 Printed by the Ministry of Economic Affairs, Central Standards Bureau, Off-line Consumer Cooperatives s V. Description of the invention (() I 1 Description of the invention I 1 I r Field of application in the industry] 1 1 This invention relates to a method for manufacturing a photomask And device > and the device [first \ (dev 1 ce) manufacturing method, which consists of using photo-etching technology to manufacture reading 1 such as a half-mm integrated circuit photographic element (coil coupling device, etc.) When a fetching device such as a display element or a thin-mode magnetic head is used as the original pattern 1, the manufacturing method and device of the light sheet and the method of manufacturing the device and the method of manufacturing the device using the manufacturing method of the mask are as follows: Known technology 1 Η, _ ·-· 1 I is used when manufacturing semiconductor integrated circuits such as mine circuits The original pattern of 1 1 1 is formed, and the circuit pattern to be formed is enlarged to, for example, 4--5 1 1 times the mask i. By reducing the projection optical% system * to reduce the projection side 1 The pattern is transferred to the exposed substrate such as a crystal or a glass plate. J 0 This type of mask _ is used for the transfer of the exposure device y and the I 1 step-and-repeat method of the reduced projection type exposure device Photomask 9 is also called I. Model 0 1 1 Line 1 Conventional 9 This photomask is made by covering the original pattern on a predetermined substrate (semi-finished product) with an electron beam drawing device or laser beam drawing device. Also 1 1 That is, a mask material (¾ 1 optical mode) is formed on the substrate. J After coating the resist m 1 1 Use the electron beam tracer device or the field beam tracer device to trace the original version of the book _ 〇〇 妖 i IHN The pit If the mask material is formed into the original m pattern by the development process such as etching and X process, at this time, 9 if the reduction projection of the mask 1 1 is used, the reduction ratio of the exposure device is 1 / Draw at 1 times at 1 I The m-pattern of this mask is a pattern that can be enlarged by β with the device pattern S 1 I -3 1 1 1 1 This paper size is applicable to the Chinese National Standard (CMS) (210 × 2Μ 公 ίΜ ^ / 2 449672 Λ7 Jinglai-Ministry Central Standards, Work and Industry, Cooperative Du Printing, 5. Description of the invention (!) Therefore, the drawing error generated in the drawing device is roughly smaller on the device. 1 1 1 is 1 / β times 〇 so 9 can be substantially formed on the device with the ability to trace the resolution of 1 1 device approximately 1 / β times the resolution of the device 0 in 1 first 1 as described above »Conventional photomasks The pattern is painted with an electron beam Read the 1 1 or laser beam tracer. The tracer is based on the information from the Zhao control IV and 1! The I system uses electricity _ to trace the original pattern. 妷The recent large-scale integrated circuit (LSI) of Jiangxi Inc. has required large-scale integration. At the same time, the precision and volume of the terms have increased, so the photomasks required for its exposure have been prepared. The original m pattern is also highly integrated and refined, and on the mask > also called T \ >-1 1 is used to prevent the pattern from being transferred in double exposure. 1 1 Repair the mask t of the pattern and the phase shifter between the adjacent patterns! This is called a phase shift mask and so on. In this special mask 1 the amount of drawing data 1 there is fcb other light Hood is more inclined 〇 Take 1 in The tracing information of the photomask required for the damage device * will become m a large number of 0 1 1 So therefore »1 of the damage time required to draw a photo of the original mask with the constitution device 1 It has reached 10 hours to 2 4 hours. 0 This time is used to describe the time. 1 1 The long time of the gland I becomes a factor in the increase in the cost of manufacturing the mask. 0 There are m in this »In the electron beam imaging device 9 the electron beam 1 is required. | Correct the adjacent effect of the special scattering * and & need to correct the uneven electric field around the base due to the charge on the base 1 i board surface 0 Therefore »When drawing the original vendor pattern according to the design * required Measure the position error and so on of the relative position in advance under various conditions > When the trace is exhausted * The complex correction can be performed stably and with high precision 1 1 degree. However, the t 1 time is covered for a long time as described above.Medium * It is true that it is necessary to carry out this stable and high-precision complex correction. 1 Ι _ 4 1 1 1 1 This paper size is applicable to the Chinese National Standard (CNS), UlOxNDHi) 4 49 6 7 2 a / Η 7 Printed by the Central Standards Bureau, Consumer Cooperatives ¾ V. Description of the invention (-V) 1 1 1 Difficulty, but it will cause inaccuracies such as the deviation of the position of the honey painting in the drawing 1 1 I 〇 and 1 Xue Γ tracing and calibrating »but it is inappropriate to make the whole tracing 1 1 cover time longer. 0 1 first 1 So in the future, the pattern dimensions of semiconducting am wax devices will be more refined. Read 1 i 1 Η light The masking time of the original pattern is too long. The position accuracy will be too small. \ There is a deviation »I may not be able to obtain the required drawing accuracy. 〇 > The drawing in the control computer The amount of data > has gradually become the most difficult for users to draw in item 1 | 0 write 1 copy--aspects * In the laser beam tracing device > is a laser page using the ultraviolet band 1 1 The light beam traces the original pattern 1 so that it can obtain a higher etchant 9 with higher resolution than the electron beam drawing device 1 and does not have the advantages of the 1 1 ortho effect caused by scattering. * The analytical capability of the laser beam tracing device 1 1 Ding is tb The analytical capability of the electron beam tracing device is higher than the laser beam tracing device 1 The laser beam tracing device 1 is also used to directly draw the original pattern 9 so the amount of data 1 i also Will increase from m to a huge number > and cause data processing difficulties 9 Once i I t the drawing time will become very long) I am afraid that due to the shift of the drawing position, etc. \ 1 Where the required drawing accuracy cannot be obtained with a line 1 In addition * When manufacturing the original mask pattern, you can also consider using the optical type 1 | projection exposure device 9 to transfer the specified image on the mask substrate y, but 1 1 as The projection optical system used in the transfer process has distortions or unevenness in the transfer line width and degree of uniformity. 1 The accuracy of the original _ case will be reduced 〇1 | The mask is actually installed on the projection Exposure device> When the mask pattern is projected on a substrate such as a crystal via the projection optics, the system will receive -5-distortion when the projection optics i 1 is left with distortion on the substrate. Image exposure 1 i 1 1 1 This paper scale applies Chinese National Standards (CNS) Λ4 Regulations (2) 0x29h > ^) 4496 7 2 Μ Η7 Printed by the Central Standards Bureau of the Ministry of Work, Subsidiary Consumer Cooperatives ii 5 Description of the invention (4) 1 1 » Wait for something wrong and the projection optics is more systematic 1 1 I Improper imaging and other persistence m 疋 There are subtle differences for each projection exposure device 1 1 > Therefore, if possible t is best to be possible for each projection exposure device If, 1 and 1 projection images are corrected. Read 1 Back I and then> Recent market trends of semiconductor ntt product SUIt body circuits are oriented towards 1 and 1 I refers to application-specific product Bit circuits (hereinafter referred to as ASIC) or% integrated large-scale integrated circuit Note 1 1 1 (hereinafter referred to as LSI) is a multi-variety, small-volume production-type device, and the period from order to delivery of this device in item 1 manufacturing is required to be shorter Better, so 1 book) When manufacturing this kind of device »First, it must be made into a manufacturing device within a short period of time T \ '—- 1 1 ♦ A mask (working mask) with an original pattern is formed, and the mask 1! I is used to make a device in a short period of time 〇1 1 and the first XUf m device Θ 疋 is subjected to, for example, 20 or more exposure processes 1丁 Only TC can be achieved in the process. Therefore, to make a kind of device, a mask with the same degree of exposure as the number of passes is required. Also, the above laser beam drawing device 1 1 set or electron beam drawing The processing capacity of the device during the aa low period is very low.> It takes 1 1 to draw 1 Η The mask sometimes takes more than 1 day. Therefore) In the past, 1 1 line t was required to trace 1 type of device. It takes a long time for all the original mask patterns used by y as a whole to shorten one of the 1 type of device | It is difficult to make the spring 〇1 1 Also because the time is drawn as a whole ^ sf = l very Long 9 so 1 kind of device in The manufacturing cost of photomasks used in manufacturing is very high > Result 7 The manufacturing cost of the device 1 1 is also very high. 0 1 1 and η * The variety of this device is as wide as many types » All masks that need to be manufactured in the first part of the original vendor-6 are laser beam tracing devices or 1 1 1 1 1 This paper size is applicable to China National Standards (CNS) (210X2W) 尨 4496 72 Λ7 Λ7 Η 7 The " -Ministry of Central Bureau of Standards, Bureau of Work and Consumer Cooperatives, Printing and Printing, V. Invention Description () * 1 I E-beam tracing devices are becoming more and more difficult for scribers in time. 0 1 1 1 ( Question] 1 The first purpose of this book is to provide a method for manufacturing a photomask, which can be ih 1 1 1 in a short period of time > high-precision stencil pattern readers 0 read 1 Jl :. 1 the second of the present invention The purpose is to provide a Photomask manufacturing method 4 It ’s customary 1 I In a projection exposure device using a photomask * The predetermined imaging of its projected image λί. 1 1 Things {When the deterioration of the t Modified on. Another 3g of the present invention is to provide a method for manufacturing a mask > its% is 1 when manufacturing a mask, m when using a projection exposure device i as it is used, > I projection optics % When the predetermined imaging characteristics of the system are degraded 9 The I 1 image piece can be substantially modified 0 1 1 The fourth aspect of the present invention is to provide a method for manufacturing a photomask, which can be manufactured by ordering j Photomasks used in AS I c or% system LSI and other small-volume production devices Λ Produced in a short time a Low cost 0 1 1 The fifth object of the present invention is to provide a manufacturing device »which can be implemented in 1 I The method of manufacturing a photomask 0 1 1 Line 1 The sixth method of the present invention is to provide a method of manufacturing a device 9 which uses a method of manufacturing a photomask 7 to achieve higher accuracy The device pattern I 1 is 0 1 1 The seventh method of the present invention provides a method for manufacturing the device, which is a fake 1.1. The above-mentioned manufacturing method of the photomask} The device i 1 I capable of producing a large variety of products can be used in In a short period of time, m successful 〇1 1 (the solution to the invention) 1 I In order to achieve the above-mentioned nine 9th-7th invention, the first photomask manufacturing method is in the shape of I 1! 1 1 This paper size applies Chinese national standards (CNS ) M specifications (2) 0 × 2 «Π 公 甘） 449672 Λ7 1Π Printed by the Consumers' Cooperative of the Central Standard Umbrella Bureau of the Ministry of Economic Affairs. 5. Description of the invention (y) 1 i into the photomask for transfer printing (case 7) In the manufacturing method> The pattern enlarged by the transfer pattern 1 1 is divided into a plurality of patterns 9 I 1 of the master mask (δ 1, -RS). Mask is 1 ^ -RN) plaque / -V Hi 1 first 1 case The small image is quotient and transferred in order. The reader reads 1 1 according to the present invention 畤 > When the photomask is manufactured, its example m 疋 is formed on the back of the photomask and the substrate ⑷ of I i 形成 is formed. Film * Coated with photoresist, etc. 1 light material 0 then t on the photosensitive material using step-and-repeat method or step-and-scan transfer method using an optical device such as an optical reduction input and a shadow m 1 Don't print most of this image. Reduce the image of the pattern of the master mask and retract the display page of the photosensitive material. 1 1 Use the remaining pattern of the photosensitive material as a mask after the image »Do etch 1 1 Engraving, etc. i Shape or Desired transfer pattern (original pattern). 1 1 At this time »Assuming that the reduction i of the optical exposure device used for manufacturing photomasks, for example, is a multiple of 1 / a (cr is an integer greater than 1, half an integer, etc.)» Transfer case (ΰ) for transfer j That is, the original version M is enlarged < χ times the original image that should be enlarged 1! The file will be divided longitudinally into a drawing of the master mask such as a X a Ο 〇 1 I If the reduction factor is% times (C Κ = 5), 5 x 5 times of 2 5 母 master mask 1 1 wire wedges 0 result * The pattern formed in each master mask becomes a part of the master pattern after the original pattern is enlarged by α times 9 Therefore > The amount of data of each master mask pattern 1 1 can be reduced to the original 1 / α 2 level, and the minimum line width mi 1 becomes a times from m. 0, and the patterns of each master mask can be used, for example, by i. Incoming electron beam tracer or laser beam tracer * Within a short period of time 1 1 to 1 Very few deviations High-precision tracing. A »The tracing error caused by the tracing device 1 1 reduces m to 1 / a on the photomask * Therefore ♦ can be more 1 I improve the accuracy of the original vendor's pattern 0 and 9 — Η After making this master mask »1 -8 1 1 1 1 This paper size is applicable to the Chinese National Standard (CNS) Λ4% straw (2ίΟ × 29 * 7) 449672 Λ7 Η7 Jing Bi's final award BeiGong Consumer Co., Ltd. Printing and Printing 5. Description of the invention (7) 1 1 The pattern of this 1¾ master mask »can be transferred at high speed in a step-and-repeat manner 1 1 1 onto the mask substrate. In most cases, the mask can be used 9 1 1 It can be manufactured in a shorter time than the conventional method used by individual tracing devices. 1 I! Significantly shortened 0 Read 1 1 The factory in this description does not use J More than just expressing the back One of the m cases is divided into a large number of master masks, and each of these master masks is cast d! J 1 Event Γ The film image is joined to t on the photomask to form the frame to be transferred. The meaning of the item is only a matter of thinking. It also includes forming a ** pattern into a plurality of master masks without splitting them together, and joining the projection m images of these master masks »to complete the light with the majority of the cases in FIG. 1 The thoughts of the mask 0 In short, the words of the factory plan in this specification are the words of the J 1 1 sentence without m. They are drawn together to form a radial pattern. It is only 1 1 and the projection artifacts of the original mask are joined together. It means 〇 so »For example, to order J to form a mask with a majority pattern 畤 r as the master mask. Imagine that >> has any role in the case-. The form of the interpretation is divided into the majority of the master mask * And 1 I each _ cases It has not been divided and divided into the form of most of the master masks. Ii | When the condition of the person * has the ability to unify— * The shape (size) of the master mask 4 1 1 line 1 and the latter condition, the pattern itself is not connected. The seam does not cause defects such as poor joining. 〇1 1 接 * The second photomask manufacturing method of the present invention is a method for manufacturing a photomask with a 1 i pattern for transfer forming the pattern 1 or The ij magnified pattern tree is divided into a plurality of V 1 I Ν master masks (R 1 ^ -RN, Q 1 ~ QN) of N Μ (N is an integer of 2 or more), and the photomask substrate (4) 1! Surface > Combine the images of the N and M groups of most of the master masks in the case-'surface and drawing ~~-1 1 and re-ordering in sequence «Transferr 〇 1 1 1 1 1 This paper size applies China National Standards (CNS) Λ4 Yuezhang {210X 297 Public Office} 1 449672 Λ7 H7 V. Description of the Invention (/) Member of the Central Standards Bureau of the Ministry of Economic Affairs Consumption cooperatives such as Indian slave masks and other small post-pattern memetics-the mask is reduced and the plaques are reduced by 1 less photon shrinkage type ®), ^) the rear light system is reduced, and the first reduction «electricity in m type Rectangular materials are made with a mastered M mold and its radiance magnification is described as a fixed optical tracing. 1 material printing, all of which are masked, and the amount of large shots αατ is also increased. The large < case and the original material are painted like the light of the senses < some, the alpha map is placed in order to use it as an example, the U example needs to be exposed at this speed. The model fruit is like this. The upper layer or the upper layer of the picture is used to cover the description of the light, which is an example of the benefit. The residual of the picture is mostly exposed by the standard light. S is the degree of it. The above formula is printed with a 0-square-number trace description. The case width is not covered, the plan is based on the case, and it is transferred to a multi-disciplinary school. Isometric exposure. The basic steps are as follows, such as printing the _ mask, the cracked sensation into the mask, and the mask mask and other steps to describe the case, the mother of the case is expected to be its mother. Adding multiple light differences to the mother is the reason, it will cut each. Figure, the material is carved in the image by the time when the tree is divided into different degrees when the wrong use of the tree, the number of post-etching groups will be lower. You shovel the same case with the tree sample model to cover more of the Δ subtraction mode, making α. The case was resolved with 2. Light material. For error and confusion, go to the mask 1 / master plan drawing method α master shape material exposure module?} From the difference between the master and the light, the master 1 / the N light mask of each top, It ’s a big mistake. It ’s made with a large wedge, and it ’s based on the last degree of light plastic impression. It ’s better than the outside system to hide the big system. This number is overlapped by the cause of the mother ’s hood. (The figure and the line can be shorter than the time required by the shop. (1¾Read the notes on the back before filling in this page)

本紙張尺度適用中國國家揉準（CNS >八4蜆格（210X297.公势 經^-部中央標隼局員工消費合作社印裝 Q K ^ 9 ~ ^ Λ 7 五、發明説明（9 ) 束描棗裝置或雷射光束描螯裝置，在短時間内，以很少 的躲差、高精度的描害。又描軎裝置所引起的誤差在光 罩丄會減少到Ι/α,因而，可更加提高原販圖案的精度。 在這樺場合，Ν紐的多數片母掩模圖案的一例定轉印 用圖案、或將該放大圖案以互為相同排列所分割的多數 圖案者。將這種以互為相同排列所分割的母掩模圖案之 圖像多層曝光，就可使這@母掩模在描番裝置上的描棗 誤差被平均化而縮小。 而最好是使Ν組的多數Η母掩模圖案中的至少一 組多數Η母掩模圃案（ΒΙ1〜ΒΙ26)和其他所定]Μ之多數 Η母掩模圖菜（P〗l〜PI2G)的分割方法相異。如此改變分 割方法時，在光罩基板上所多層曝光的圖案之圖像，會 在投影這些母掩模画案圖像的投影光學条統之曝光區域 内，在不同位置丄多層曝光。因而，可使投影光學糸統 的失真，或因在曝光區域内的位置所引起的轉印線寛度 均勻性的誤差備受平均化，而可提高光罩國案的精度。 再者，最好是使Ν Μ的多數片母掩模圖案中的至少i 組多數Η母掩模圖案包含著其他所定】Μ的多數K母掩 楔圖案之接合區域。藉此，當一面併圖、一而曝光之際 ，其接合誤差也會被平均化而減低。 繼而，本發明第3光罩製造方法是在具有元件圖案的 光罩之製造方法中，將裝置圖案的多數分割圖案之一（Ρ1 〜Ρ Ν )轉印於掩模基板⑷上，並將和該一分割圖案至少有 一部份是相同的另一分割圖案（A 1〜A N ) t使其相同部份 -1 1 - 本紙張尺度適用中國國家標隼（CNS ) Λ4規柊< 210X297公处） I *111 : . I I 11 - I In - 1 —1 ^^^1 K n^— M- Ί (1¾先閲讀背而之注4事項典填朽本頁) 449672 Λ7 H7 經滂部中央標準局貝工消費合作社印^This paper size applies to the Chinese national standard (CNS > 蚬 4 蚬 格 (210X297. Ministry of Economic Affairs ^ -Ministry of Standards and Technology Bureau of the People's Republic of China Standard Printing Bureau printed QK ^ 9 ~ ^ Λ 7 V. Description of the invention (9) The jujube device or laser beam tracing device can describe the damage with little hiding and high accuracy in a short time. The error caused by the tracing device will be reduced to 1 / α in the photomask. The accuracy of the original pattern is further improved. In this case, the pattern of the master mask pattern of the majority of N and N is a pattern for transfer, or the enlarged pattern is divided into a plurality of patterns in the same arrangement with each other. Multi-layered exposure of the image of the master mask pattern divided by the same arrangement with each other can make the error of the @master mask's tracing on the tracing device be averaged and reduced. It is better to make the majority of the N group The division methods of at least one group of the majority of mother mask patterns in the mother mask pattern (B11 to B26) and other predetermined mother mask patterns (P1 to PI2G) are different. Such changes In the division method, the image of the pattern exposed in multiple layers on the mask substrate is projected on Multiple exposures at different positions in the exposure area of the projection optical system of the master mask pattern image. Therefore, distortion of the projection optical system or transfer lines caused by the position in the exposure area can be caused. The degree of uniformity error is averaged, which can improve the accuracy of the mask national case. Furthermore, it is best to make at least i sets of the majority of mother mask patterns in the majority of NM mask patterns include other [Determined] The bonding area of the majority of the mother mask patterns of M. By this, when one side is combined and exposed, the bonding error will be averaged and reduced. Then, the third photomask manufacturing method of the present invention is In the method for manufacturing a photomask having an element pattern, one of a plurality of divided patterns (P1 to PN) of a device pattern is transferred onto a mask substrate ⑷, and will be at least partially the same as the one of the divided patterns. Another division pattern (A 1 ~ AN) t makes it the same part -1 1-This paper size applies Chinese National Standard (CNS) Λ4 Regulations < 210X297 public place) I * 111:. II 11-I In -1 —1 ^^^ 1 K n ^ — M- Ί (1¾ Read the back and note 4 things first (Item code completes this page) 449672 Λ7 H7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^

五、發明説明（ ί Ο ) 1 1 能 軍 饕 般 轉 印 在 掩 模 基 板 ⑷ 上 者 〇 1 依 據 本 發 明 者 > 如 將 這 些 分 割 圖 案 以 電 子 束 描 畜 裝 1 1 置 等 描 害 時 j 由 於 有 兩 分 割 IS 案 重 疊 曝 光 9 可 使 兩 分 割 i 先 1 HI 案 的 描 害 誤 差 被 平 均 化 而 可 提 高 裝 置 鬪 案 的 精 度 0 間 讀 1 η. a 些 分 割 阖 案 可 由 步 進 東 複 方 式 反 複 使 用 ί 因 而 i 可 背 而 1 1. 之 [ 高 速 的 製 诰 多 數 光 罩 0 /i 1 事 在 此 場 合 > 最 好 θ 疋 使 這 多 數 分 割 圖 案 分 別 以 光 束 曝 項 再 1 光 並 使 其 縮 小 圖 像 接 合 轉 印 於 所 定 掩 模 ⑷ 上 者 Ο 因 m 4 ίζ I 本 由 此 縮 小 投 影 * 可 使 瑄 分 割 _ 案 的 描 棄 誤 差 在 光 罩 上 Ά '· 1 [ 縮 小 > 而 可 提 高 裝 置 画 案 的 精 度 0 1 1 而 冃' 欲 將 多 數 Η 母 掩 模 (R 1 ^ -RN)圃案的縮小圃像依 1 I 序 轉 印 在 基 板 ⑷ 表 面 之 際 t 曰 取 好 是 因 應 光 罩 的 用 途 (所使 1 訂 用 的 曝 光 裝 置 之 方 式 等 ), 分別使用總括曝光型的縮小投 i 影 m 曝 光 裝 置 或 掃 描 曝 光 型 的 縮 小 投 影 型 曝 光 裝 置 〇 ] 1 例 如 其 光 罩 是 要 使 用 在 如 步 進 掃 描 方 式 的 掃 描 曝 光 型 1 I 之 縮 小 投 影 m 曝 光 裝 置 中 時 t 其 投 影 圖 像 上 s£fr 産 生 平 行 1 1 四 邊 形 狀 的 變 形 (所謂歪曲誤差）等情事 〇 此 時 9 在 總 括 線 \ 曝 光 m 中 因 難 於 修 TF. 歪 曲 誤 差 * 故 要 在 其 光 罩 基 板 上 轉 1 1 印 多 數 Η 母 掩 模 圖 案 時 I 使 闬 掃 描 曝 光 型 的 投 影 曝 光 裝 1 置 而 賦 與 可 抵 消 其 歪 曲 誤 差 之 變 形 j 就 可 在 使 用 該 光 罩 / 畤 減 低 其 變 形 t 而 縮 小 棄 m 誤 差 等 〇 J 又 要 將 多 數 片 母 掩 模 (R 1 - -〇)的圃案 (或圔案的编小圖 1 1 像 )依序轉印於基板⑷表面之際， 最好是因應要使用該光 1 I 罩 的 投 影 曝 光 裝 置 之 投 影 光 學 糸 統 中 的 、 非 旋 轉 對 稱 1 1 -1 2 - 1 1 I I 本紙張尺度適用中國國家榡準（CNS ) ( 210X29*?公处） Λ 9 6 7 2 Λ1 Η7 經濟部中央標準局貝工消费合作社印製 五、發明説明 ( i 1 ) 1 1 像 差 和 失 真 特 性 中 的 少 _. 項 * 分 別 修 ΪΕ 該 母 掩 模 1 1 1 (R 1 - -RN ) H 案 的 縮 小 圖 像 之 成 像 特 性 (轉印位置、 倍數、 1 1 失 宾 等 )為宜。 1 九 1 如 眈 若 預 先 知 道 使 用 光 罩 的 曝 光 裝 置 之 所 定 特 性 的 間 讀 1 變 動 1: 畤 * 在 光 罩 的 m 板 上 將 各 母 掩 模 的 圖 案 圖 像 面 背 而 1 1 之 1 1 併 圖 — 而 轉 印 之 際 » 藉 以 調 整 各 母 掩 模 圖 案 圖 像 的 轉 印 意 1 r 位 置 、 倍 數 、 進 而 失 真 等 9 使 能 柢 消 其 成 像 特 性 的 變 動 项 再 1 m * 到 頭 夾 S 可 縮 小 使 用 光 罩 所 曝 光 的 裝 置 m 案 之 失 填 1 本 宾 等 θ 可 提 高 重 供 精 度 〇 Ά 、—r-· 1 I m 於 這 一 點 也 有 製 成 多 數 片 光 罩 ， 而 將 這 光 罩 使 1 1 用 在 m 合 F 配 方 式 等 的 多 數 台 投 影 曝 光 裝 置 上 之 場 合 〇 1 1 在 這 種 場 合 最 好 是 因 應 預 定 使 用 這 些 光 罩 的 > 至 少 2 1 訂 台 投 影 曝 光 裝 置 的 投 影 圖 像 失 真 恃 性 等 平 均 化 待 性 t 當 I 接 合 轉 印 各 母 掩 樓 圖 案 時 ί 調 擊 轉 印 位 置 或 圖 像 待 性 等 1 1 使 能 以 各 Μ 投 影 曝 光 裝 置 獲 得 良 好 之 重 精 度 為 宜 〇 1 I 接 m 1 光 罩 被 使 用 在 縮 小 投 影 上 更 為 理 想 〇 如 光 罩 使 1 1 用 在 例 如 1/ β (卢是大於1 的整數或半整數）之 縮 小 投 影 線 I 丄 > 而 製 造 光 罩 所 使 用 的 曝 光 裝 置 之 縮 小 倍 數 為 1/ a 倍 ! < C r和办同樣， 大於1 的整數或半整數） 時 各 母 掩 模 圖 1 1 案 的 描 蛮 誤 差 在 最 後 在 所 曝 光 的 裝 置 _ 案 上 縮 小 到 | 1! (t X 石）倍 0 從 而 * 如 要 將 裝 置 圖 案 的 最 小 線 寬 度 作 1 為 假 設 為 現 在 的 1 / 2時， 也可利用電子束描棗裝置、 或雷 1 1 射 光 束 描 害 裝 置 等 t 以 所 需 的 精 度 1 容 易 的 a 在 短 時 間 I ! 内 描 畫 各 掩 模 圖 菜 (分割_茱U 從 而 9 即 使 圖 案 尺 寸 更 1 1 I -1 3 - 1 I 1 1 本紙掁尺度適用中國國家標苹（CNS ) Λ4現格（2i〇X2W^^ ) ^ 496 72 Λ7 H7 五、發明説明（n ) 為撤細化，也可将所需的裝置圖案，以所需之精度曝光β 而ft, ft可將這些母掩模（分割圃案）的一部份作為移 相掩模等，更按每一母掩模使其成像特性為最合適化者 為官。 繼而，本發明第4光罩製造方法是在形成有所定轉印 用窜路圖菜的光罩（WR)之製诰方法中，形成包含箸分別 對_其轉印闬電路阖栞中的〗傾或多數偏電路匾之〗艏 或多數個鬮案犟元（Pa, PB,Pc>所形成的國案之母掩模 (MR1),而將由該母掩棋（HR1)圖案中所選擇的上述圖案 單元之投影阚侏，以所定之位置糊係轉印於上述光罩 (wtO用之基板上者。 若依照上述的本發明，要製造所諝AS 1C或条统LSI等多 品種少量生産的多數種類裝置用光軍（工作掩模）時，其 光罩本身是必需按其每一品種健別製成。但，這些多數 裝置所要轉印的圖案（工作掩模的圓案），並不一定是每 —品榑都完全不相同，在不同品種間具有共同的中央處 理機（以下稱CPI丨）部分、或隨機存取記億體（以下稱ram) 部分等電路匾者很多。又顯然是不具有CPU部分或RAM部分 經滴部中央標準扃兵工消费合作杜印製 ^ (請先閱讀背而之注意事項再填寫本頁) 的不同品棰裝置，但其在一般上，均具有雖比CPU部^等規 模小，但有某些部分是共同的電路區（小規楔電路單元）者。 於是，本發明第4光罩製造方法是在其母掩模（掩模原 版）上，事先形成對臛應形成在其光罩的圖案中的所定電 路區之圖案單元。然而，在其光罩的基板⑽上形成掩模 科料，在其上商塗布感光材料後，將母掩楔中所對應的 圖案單元之投影阃像，轉印於其基板上·形成該電路匾 -1 4 - 準 i標 一家 國 國 中 用 適 度 尺 張 紙 本 to 2 經來-部中央標準局負工消費合作社印t 4 49 6 72 Λ— Λ i B? 五、發明説明（4) 之位置，而對其他部分也分别將所對醮的圈案轉印或描 窖後，Μ實行感光材料的顯像及以其殘留的威光材料作 為掩榑迤行蝕刻加工等，在短畤間内更以低成本製成其 光罩。 在洁種場合，其電路區係可對應做為一例的積體霄路 中的CP II核心部分、RAM部分、唯讀記憶體（以下稱R〇、M)部分 、或檫準單元用的檫準電路區等中之任一部分。一般上 ，ASIC等是具有共同的CPU核心部分或RAM部分等者多， 故本發明的母掩模是要製造多種類裝置之製造上所使用 的光罩（工作掩模）之際，可共通使用，而可減低各裝置 的製造成本。 而目，先準備分別對應其轉印用電路圖案内互異電路 區的不同阖案單元<Pa,Pf)所形成多數Η母掩模（MR1，KR2) 作為其母模，而從谙些多數Η母掩模的圖案中，將所選 擇的圖案單元之投影_像依序以所定位置關俗轉印於其 光箪用基板铋上為宜β藉此將多數片母掩楔的矚案單元 之投影圃像組合而鞞印於基板⑽，就可在整體上使用較 少Μ教的母掩模，在短時間内製成許多穐類的裝置。 亦即，其母掩模（MR〗）是使用在要製造多數種類的光罩 (WR、WR.1)時較為理想。由眈，可縮短各光罩的製造時間 ，而減低製造成本。 又對於新品種的ASIC等裝置，雖然需要另外製诰具有 新電路部分的母掩模（掩模原版），但在新品種的裝置中 ，其大部分霄路區的圖案可由琨有的母掩模圖案單元之 -1 5 - 本紙張尺度適用中國國家標隼（CNS ) Λ4蚬格（2丨0X297公势） (ΐΐ先閱讀背面之注念事項再縝艿本s) -訂 —·- 線 ί 449672 Λ7 Ii7五、發明説明（a) 經滂部中央樣準局Μ工消費合作社印掣 數造 於影如母母能用差 單縮一圖要模模的 掩收上 之製 印投例的該理使誤 案用之本而掩規樣 Η 模台 元之 轉的在上棗處被軎。圖，案基。之小各 數掩模 單罩 像小用罩描其再描置模上圖接形元或種 多该掩 案光 _縮使光要等罩的裝掩分路連情單線各 容由該 圖用 小更被其，置光案之母部電要等案配短 收載將 模置 缩於案在而裝又阖細其一用箸案圈其缩 ：承； 掩裝 的用 _ ，從棗。模精而少印雜圖等將可。含·，⑵ 母穐 元使模時。描置掩更，至轉擦模菜只就本包8)4口 新品 單被掩影α束裝母成上中其有規鬮，，成偽丨模 的新 案再母投1/光棗其製 S 域聳會小模合成造置0~掩 軎該 鬭單其小為射描，的板區描，的規場形製裝(1之 描短 模光般縮成霜之而度基的來中有小穐來低造置模 需縮 掩該述的萝如高因精用外束案特或這棗滅製裝掩G-所度。母-上} 也例為，高罩以光鬮置線在描可罩容 Κ-1 其幅本其時如 W 差用置上以光域光罩裝配 C的也光收1 ，大成使同 ，/誤使装影得其區曝光各穐雜等，的模的 成司低是之而 W 菜可策投而在印的其或這繁束間明掩出 形，降好 S 然!31描，描的，可轉點在線備其光時發之禳 來少可最板。 桨時束小低也所光。配具掙射造木N)所 印減而，某佳 案子编減，像定可的造育笛製，卩中 轉必 ，Η.用較(α之圃爾為為外111所亦 i兀製畤由之署1~冒 光勢間而罩為α模榉hh更¾此的為分單新有菜罩接 U 装 曝 I 時 光 L1/梅掎力在會 元成部案审 ，圖光 桿容 本紙張尺度適用中國國家標隼（CNS ) Λ4現枯（210Χ29?公处> I - --1 * -i - -i —_L. ---_M ------訂------線Ί (¾先閱讀背而之注意事項再硝巧本頁) 經满部中央梂卑局負工消费合作社印製 f 4496 72 Λ 7 , JH ___ 五、發明説明（α) 的掩模圖案之缩小圃侏投影於光罩用基板⑷上之< 投影光 學集統（3);將該基板在垂直於該光學投影条統的光軸之 平尚丄定位之基板台⑸；及為了要將多數片的上逑掩模 _案之縮小圖像在茶板上做併阃，而使掩模台⑵上的掩 模和在接板台⑹上的基板對準位置對準糸統（1 4 A , 1 4 B ) 者。 利用请榫光罩製迪裝置，就可實施本發明的光罩之製 造方法。 在這種場含.作為掩模收存裝置的一例乃是，收容荖 分别形成有將作為製造對象的光罩國案®放大後所分割的 阖案之多數Η母掩模（R1〜！4(〇者。賴眈，這些母掩模可 被高速交換，而在短時間内進行曝光。而巨，這種光罩 製造裝賢最好是具有可遘擇在於掩模麵案中任意位置的 所定形狀之阖案，使該所選擇的圖案_由其投影光學条 統縮小的_像役影於光罩用基板鉍上之視界選擇糸統， Un4)，而其對準条統（1〇9A,109B,FM1)是在該視界選擇 糸統將所撰擇的编小阈像要以所定位置關偽轉印於基板 丄時，對準其掩模和在基板台上的甚板之間的位置者。 此外，丄述光罩裝置最好是設置可對基板上所需求部 分以收編成為光點狀的曝光光東（雷射光束、電子射線 等）照射之曝光光東照射条統（丨,A〗，AM1, 121 ,120)為宜。 由此，可將不適於該掩模所轉印的配線等電路圃案，藉 由其曝光光束的描軎容易形成之。 而目.，本發明的裝置製造方法是欲將所定阖案形成在 -1 7 - 本紙張尺度適用中國困家標率（CNS)A4*JW& ( 210X297公犛） (誚先間讀背而之注意事項再填艿本頁)V. Description of the invention (ί) 1 1 Can be transferred to the mask substrate in the same manner as described above. 1 According to the inventor > Because there are two division IS cases, the overlapping exposure 9 can average the tracing error of the two division i first 1 HI case, which can improve the accuracy of the device case. 0 Interval reading 1 η. A. Repeated use, so i can be backed up to 1. 1. [High-speed control of most photomasks 0 / i 1 in this case > It is best θ 疋 to make the majority of the division pattern with a beam exposure term and 1 light The reduced image is joined and transferred to a predetermined mask. The former 〇 Because m 4 ίζ I originally reduced the projection * so that the error of the segmentation scheme can be placed on the mask. '· 1 [Reduce > can improve the accuracy of the device drawing 0 1 1 and 冃' To transfer most of the reduced image of the master mask (R 1 ^ -RN) to the substrate in the order of 1 I I When the surface is t, it is appropriate to use the mask according to the use of the mask (the method of 1 custom exposure device, etc.), and use a collective exposure type reduction projection i exposure device or a scan exposure type reduction projection exposure device. 〇] 1 For example, when the photomask is to be used in a scanning exposure type, such as a step-and-scan method, a reduced projection m exposure device is used. T The projected image is s £ fr, which produces parallel 1 1 quadrangular deformation (so-called distortion). Error), etc. At this time, 9 is difficult to repair TF in the overall line \ exposure m. Distortion error * Therefore, it is necessary to turn 1 on the mask substrate. Can be offset by exposure device 1 The distortion j of the distortion error can be reduced by using the mask / 畤 to reduce the distortion t, and the error m can be discarded. 0J In addition, the majority of the master masks (R 1--〇) should be used in the case (or the case). Small picture 1 1 image) When sequentially transferred to the surface of the substrate, it is best to respond to the non-rotational symmetry 1 1 -1 2-in the projection optical system of the projection exposure device using the light 1 I cover. 1 1 II This paper size applies to China National Standards (CNS) (210X29 *? Public Office) Λ 9 6 7 2 Λ1 Η7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (i 1) 1 1 The _. Term in the difference and distortion characteristics * are modified separately. The imaging characteristics of the reduced image of the master mask 1 1 1 (R 1--RN) H (transfer position, magnification, 1 1 misbehavior, etc.) Better. 1 9 1 If you know in advance the predetermined characteristics of the exposure device using a photomask, read 1 Variation 1: 畤 * Put the pattern image of each master mask on the m-plate of the photomask and back 1 1 1 1 Plotting—while transferring »To adjust the transfer intention of each master mask pattern image by 1 r position, magnification, and further distortion, etc. 9 Enable to cancel the variation of its imaging characteristics by 1 m * to the head clip S Can reduce the missing value of the device m case exposed by the photomask 1 宾, etc. θ can improve the accuracy of resupply 0Ά, -r- · 1 I m At this point, many photomasks have also been made, and this photomask When 1 1 is used in most projection exposure devices such as the m-to-F arrangement, etc. 0 1 1 In this case, it is best to use these masks in accordance with > at least 2 1 The projection image of the order projection exposure device is equal to the distortion of the projection image, such as distortion, when I joint transfer each female floor covering pattern, tiling the transfer position or image waiting, etc. 1 1 Enable exposure at each M projection It is advisable to obtain good weight accuracy of the device. 1 I then m 1 mask is more ideal for reducing projection. For example, the mask uses 1 1 for example 1 / β (Lu is an integer or half integer greater than 1). Reduce the projection line I 丄 > and the reduction ratio of the exposure device used to make the mask is 1 / a times! ≪ C r is the same as the integer or semi-integer greater than 1). In the end, the trace error of the device is reduced to | 1! (T X stone) times 0 in the exposed device case. Therefore, if the minimum line width of the device pattern is set to 1 and the current 1/2 is assumed, You can use an electron beam tracing device, or a lightning 1 1 beam tracing device, etc. Accuracy 1 Easy a Draw each mask in a short time I! (Segmentation_JuU and thus 9 Even if the size of the pattern is more 1 1 I -1 3-1 I 1 1 The paper scale is applicable to the Chinese national standard apple (CNS) Λ4 is present (2i〇X2W ^^) ^ 496 72 Λ7 H7 V. Description of the invention (n) For the purpose of refining, you can also expose the required device pattern with the required accuracy to expose β and ft, ft can A part of the master mask (divided case) is used as a phase shift mask, etc. It is more appropriate to make the imaging characteristics of each master mask the most suitable. Next, in the fourth photomask manufacturing method of the present invention, in a manufacturing method of forming a photomask (WR) with a certain transfer pattern for transfer, a method including forming a pair of pairs of _ and its transfer circuit is included. The main mask (MR1) of the national case (Pa, PB, Pc >) formed by the majority or partial circuit plaque will be selected by the mother mask (HR1) pattern. The projection layer of the above-mentioned pattern unit is transferred to the above-mentioned photomask (wtO substrate) at a predetermined position. If the present invention is described above, a large number of small-scale productions such as AS1C or LSI can be produced. When using the light army (working mask) for most types of devices, the reticle itself must be made for each of its varieties. However, the patterns (circular case of the working mask) to be transferred by these devices and It is not necessary that every product is completely different, and there are many circuit plaques such as a common central processing unit (hereinafter referred to as CPI 丨) or a random access memory (hereinafter referred to as ram) among different varieties. Obviously it does not have a CPU part or a RAM part Cooperative Du printed ^ (please read the precautions before filling out this page) of different products, but in general, although they are smaller than the CPU part ^, but some parts are common Circuit area (small gauge wedge circuit unit). Therefore, the fourth photomask manufacturing method of the present invention is to form a predetermined circuit on the mother mask (mask original) in advance, which is to be formed in a pattern of the photomask. Pattern unit in the area. However, a mask material is formed on the substrate ⑽ of the photomask. After applying a photosensitive material on the substrate, a projection image of the corresponding pattern unit in the mother mask is transferred to the substrate. · Form the circuit plaque-1 4-quasi-i standard in a country with a moderate rule of paper to 2 Economic and Trade-Ministry Central Standards Bureau Offshore Consumer Cooperative Cooperatives t 4 49 6 72 Λ— Λ i B? V. Description of the invention (4), and other parts are transferred or traced to the opposite case, respectively, and M performs the development of the photosensitive material and the etching process using the remaining acrobatic material as a mask. The photomask can be made at a low cost in the short booth. , Its circuit area can be used as an example of the CP II core part, RAM part, read-only memory (hereinafter referred to as R0, M) part, or the standard circuit area for the standard unit, etc. Generally, there are many ASICs, etc. which have a common CPU core portion or RAM portion. Therefore, the master mask of the present invention is a photomask (working mask) used in the manufacture of various types of devices. In this case, they can be used in common, which can reduce the manufacturing cost of each device. To this end, first prepare a plurality of masks formed by different project units < Pa, Pf) corresponding to different circuit areas in the circuit pattern for transfer. (MR1, KR2) as its mother mold, and from the patterns of most of the mother masks, the projection_image of the selected pattern unit is sequentially transferred in a predetermined position on the optical substrate bismuth The above is suitable for β. By combining the projection images of most of the film masking units of the attention unit and imprinting them on the substrate, it is possible to use a small number of mother masks as a whole, and make many in a short time.穐 -like device. That is, the master mask (MR) is preferably used when manufacturing most types of photomasks (WR, WR.1). Therefore, the manufacturing time of each mask can be shortened, and the manufacturing cost can be reduced. For new ASIC devices, although a new master mask (original mask) with a new circuit part is required, most of the patterns in the Xiaolu area can be masked by the original master mask. -1 of the pattern unit-This paper size applies to the Chinese national standard (CNS) Λ4 grid (2 丨 0X297 public power) (ΐΐRead the notes on the back before copying this s) -Order — ·-Line ί 449672 Λ7 Ii7 V. Description of the invention (a) Printing examples of the central government's standard sample bureau, M Industrial Consumer Cooperative Co., Ltd., which can be used as a printing example for a mother and a mother who can shrink a picture with a single sheet to cover the model. This principle caused the misuse of the case to cover up the rules, and the transfer of the model Taiwanese was stabbed at Shangzao. Figure, case base. The small mask of the single mask is like a small mask depicting its re-drawing on the mold. There are a lot of masking elements in this figure. The shrinking light must wait for the mask of the mask. The use of small is more important, the mother of the case of the set of light should wait for the case with a short load to shrink the mold to the case, and install and carefully use one of the cases to shrink the contract: Cheng; the use of cover _, from date. Mold fine and less miscellaneous drawings will be available. With ·, ⑵ Mother ⑵ Yuan Shimo. Describe the cover, until the transfer of the mold dishes only in this package 8) 4 new products were masked α bundled into the mother, the rules are correct, if the new case is a fake model, then the mother casts 1 / guangzaoqizhi The S domain will be composed of small molds. 0 ~ This mask is simple, and the small area is a trajectory. The shape of the field is made of a scale. There is a small urn in order to make a low-profile mold. It is necessary to hide the described Luo Ruo Gao Jing using the external beam or the jujube system to hide the G-degree. Mother-top} For example, the high cover is light Place the line in the mask to cover the size of K-1. At this time, if the W difference is used, the light field mask is used to assemble C. The light is also closed. Etc., the model's success is low, and the W dish can be used to conceal the shape in the print or the bunch, and reduce the S !! The description, the description, you can turn to the online preparation time It ’s the best to make it with less hair. The beam is also low when you paddle. It is equipped with a shot to make the wood N), and a good case is edited and reduced, like a definite breeding flute system. , Η. Use (α's Puer is 111 out of 111), and the system is made by the Department 1 ~ the light is between the potential and the cover is α mode beech hh more: the new order cover has a new vegetable cover to connect to the U device. I time L1 / Mei Lili was tried in Huiyuan Cheng's Ministry. The paper size is applicable to the Chinese national standard (CNS). Λ4 is dead (210 × 29 Office > I---1 * -i--i —_L. ---_ M ------ Order ------ line (This page) Printed by the Central Ministry of Labor and Human Resources Cooperatives f 4496 72 Λ 7, JH ___ V. Reduction of the mask pattern of the mask pattern of the invention description (α) onto the mask substrate & < Projection optical system (3); a substrate table for positioning the substrate at a level perpendicular to the optical axis of the optical projection system; and in order to reduce the image of the upper mask of the majority of the film The tea plate is made parallel, so that the alignment position of the mask on the mask table ⑵ and the substrate on the connection table ⑹ is aligned with the system (1 4 A, 1 4 B). It is possible to carry out the photomask manufacturing method of the present invention by using a DI device. As an example of a mask storage device in this field, each of the storage masks is formed with a photomask to be manufactured. Segmented puppet Most of the master masks (R1 ~! 4 (0). Lai, these master masks can be exchanged at high speed and exposed in a short time. However, it is best to have such mask manufacturing equipment. The choice is a solution of a predetermined shape at any position in the mask surface, so that the selected pattern _ reduced by its projection optical system _ image selection system on the bismuth of the mask substrate, Un4, Un4 ), And its alignment system (109A, 109B, FM1) is when the vision selects the system to make the selected small threshold image to be transferred to the substrate at a predetermined position, and then align the mask. The position between the mold and the plate on the substrate table. In addition, it is preferable that the photomask device is provided with an exposure light irradiation system (丨, A) that can irradiate the required portion of the substrate with a light spot-like exposure light (laser beam, electron beam, etc.) , AM1, 121, 120). This makes it possible to easily form circuits such as wirings that are not suitable for transfer by the mask by tracing the exposure light beam. And the purpose. The device manufacturing method of the present invention is intended to form the determined case at -1 7-This paper size is applicable to China Standards for Household Standards (CNS) A4 * JW & (Notes to fill out this page)

;1T 線 449672 !\1 Η 7 經滴部中央標卑局员工消贽合作杜印聚 五、發明説明 ( ) 1 1 蒜 板 Η J： 的 裝 菁 之 製 造 方 法 中 1 是 將 所 定 _ 案 所 放 大 的 1 1 1 第 1 謂 案 再 度 放 大 之 第 2 圖 案 加 以 分 割 成 為 多 數 Η 1 1 的 m 掩 m 圖 窠 (P 1 - -P fi ) ♦ 而 將 多 數 Μ 母 掩 模 m 案 依 序 — if) 1 tL 1 而 併 _ — m 將 其 縮 小 投 影 於 所 定 某 板 ⑷ 上 ， 以 製 成 形 成 間 讀 1 有 第 1 阖 案 的 宵 際 曝 光 用 之 光 罩 而 將 該 實 際 曝 光 用 背 而 1 之 1 光 罩 |翮 葉 的 縮 小 圖 m 轉 印 於 其 基 板 上 者 〇 }± 念 1 1 事 η 依 據 木 W 明 者 t 假 定 從 要 形 成 在 棊 板 η 上 的 裝 置 園 項 再 1 1 菜 协 大 到 第 1 m 案 之 倍數 為 β 倍 U是大於1 的整數、 填 1 本 半 整 數 等 ), 由第1 阖栞放大到第2 _案鉍的倍數為α倍 1 1 (C r和同樣t 是大於1 的整數或半整數）者 t 上 述 各 母 1 I 椅 模 _ 案 的 線 寬 度 ΕΠ 成 為 裝 置 _ 案 的 a • β 倍 〇 從 而 > 1 ! 要 將 m 母 掩 模 圖 案 用 電 子 束 描 棗 裝 置 等 描 害 之 際 > 假 1 π 如 其 線 寬 度 的 描 寄 m 差 的 厶 ίΐ畤， 裝置園案的線寬度誤差 ! 大 上 ^*s. η 減 低 到 Δ d/ a - β » 因 此 得 以 頗 1¾ 精 度 形 成 t 1 裝 冓 圖 m 〇 1 1 而 η » 有 m 於 裝 置 的 製 造 方 法 中 ， 其 母 掩 模 是 將 第 2 1 1 線 ί 鬭 案 铜 別 分 割 成 為 N 組 (Ν 為2 以上的整數）的 多 數 Η _ 案 ί ρ 1 - -P N , Q 1 »*v Q N ), 而將N 組的多數片母掩模圖案依 I 1 序 一 而 併 圖 ' 一 面 將 其 東 黌 縮 小 投 影 於 所 定 基 板 (4) 上 ♦ 1 以 m 成 形 成 有 第 1 圖 案 的 實 際 曝 光 用 光 罩 04) 者 i 較 為 ! 理 想 0 I 桉 如 丄 所 述 由 於 將 纽 的 母 掩 模 圖 案 之 縮 小 圖 像 I 1 荦 # 而 鞞 印 故 藉 其 平 均 化 效 果 5 可 減 低 其 描 m 裝 置 的 1 1 誤 差 Κ>. 為 编 小 轉 印 母 掩 模 鬪 案 所 需 的 投 影 光 學 % 統 之 失 1 1 -1 8- 1 1 1 1 本紙張尺度適用中國國家標準（CNS > Λ4規彳Μ 210-公» > 經滅部中央標準局氕工消費合作社印Κ 4 4 9 6 7 2 Λ? ΙΠ 五、發明説明（π ) 真等影键。 接裝，木發明的裝置製诰方法是要將所定霄路形成在 某板上的裝置之製诰方法中，乃將對應由所定電路圖案 所放大的第1電路圖窠中的牵少1個電路區之_案單元 (P a )形成在母掩模（M R1 )上，而將該母掩模的阖案單元以 所定位背關偽轉印於所定基板5 ()上，以製成形成有上逑 第ΐ電路圖案的實際曝光用光罩（MR),而將該實際曝光 用光罩的圖案之縮小圖案轉印於裝置用基板W上者。 若依據本發明者，由於可在短畤間内製成其實際曝光 用光罩，故可在短時間内以高精度製成裝置。 ί宥施例1 以下#照圖闹説明本發明之實施例。 mi— 第1阖是本發明實施例1之光罩製造工程在第1 _中，作為製造對象的光罩是在實際製造半導體裝置之 際所使用的工作掩模34者。該工作掩楔34是在由石英玻 璃等所形成的透光性基板之一面上，由鉻（C !)、矽化鉬 (Μ 〇 S i 2等），或其他掩模材料，形成轉印用原版圖案2 7 者。目.，在該工作掩模丄，將原版圖案夾於其間的形成 2傾對準標記2 4 A、2 4 B。 义，X作掩模3 4是使用在經由光學式投影曝光裝置的 投影光學条統之1/办倍（/S是大於1的整數或半整數，其 一例是4 , 5，或fi等）编小投影上〇 ΕΠ，在第ί _中，是將 I作掩模3 4的原販圖案2 7之1 / /5倍縮小圖像2 7 W在塗布光 -1 9 - 本紙張尺度適用中國國家標隼（CNS ) Λ4规格（210乂297公犮） n* In ] ί- 1..1 I .nn I . . \、一sOJ1 .-'HI (n - (¾先間讀背而之注意事項再填寫本I ) 4 9 6 7 2 A7 H7 五、發明説明（) (誚先間讀背而之注意事項再填寫本頁 附劑的晶H W上之各拍攝區域4 8曝光後，經以顯像和蝕 刻加工，在各怕攝區域4 8形成所定電路圖案3 5。又，在 本寶施例中，投影曝光裝置的投影圃像之非旋轉對稱像 差，及失裒特性等的成像特性，都預先經過测定，其測 定結果會在於如後逑的製造工作掩模時利用之。以下， 對於作為光罩的工作掩楔之製造方法中的實施例1加以 在第1鬨中，首先會設計在最後製成的半導體裝置之 某阑霄路_案35„電路圖案35是在其成正交的邊寛為dx ，ri y之矩形區Μ内，形成各種各揉的線路空間阔案等者 --β 存木例中，是將電路圖窠3 5放大疗倍，在電腦的圖像 資料上编輯其if·交的邊寛為乃* d X，/? * d y之矩形區域 所構成之原販圖案27。 倍是工作掩模34所使用的投影 曝光裝置的縮小倍數（〗/β)之倒數。又，在工作掩模34 所使用的投影曝光裝置中，如其縮小圖像會被反轉投影 時，霄路圖案也加以反轉放大，以製成原版阖案27。 經"部中央標挲局負工消费合作社印袈 接轉，將該原版2 7放大《倍（α是大於1的整數或半整 數，其一例為4, 或fi),在阖像圖料上编輯其ΪΕ交的邊 茛為α /? · <1Χ , α 办_ d y之矩形區域所構成之母國 華：ί 〇,並將詨a圖案3 〇在縱横各分割為α锢，以在圖像 W 料丄編輯 X α 阔母圖案 Ρ ]，Ρ 2，Ρ 3，· _ _ P N ( H : α 2 )。 在第1圃中所示的是《 = Γ)。又，此母_案3 G的分割數α 並不一定要和矂版圖案2 7的放大到母_案3 fi之倍數α為 一致^然後由這些母圖案P U i = 1〜Ν )個別编輯成為電子 -20" 本紙依尺度適用中國國家標準（CRS > MWJf，（ 210X；W公# ) 經溁部中央標苹局貝工消费合作杜印裝 14 9 6 7 2 Λ" Η7 五、發明説明（I?) 束描害裝詈（或雷射光束描棗裝置等）所使用的描軎資料 ,而將該母_案P i個別以等倍轉印於作為母掩模的掩模 嗫版R i上。 例如要毅诰第丨Η撺模原版R ]時，是在S英玻璃等的 透光杵某板上，形成銘或矽化鋁等的掩模材料之薄膜， 存其| _聲布霄芊射線杭練劑後用雷子束描棗裝置在其 蜇子射線杭钟_」：描棗第丨张母圖案P 1的等倍圖像，然 後將窜子射線杭鈾劑顯像後，經過蝕刻加工及抗轴劑剝 離等，在掩模原版R 1上的圖案區域2 0形成母_菜P 1。眈 時，在掩模原版m上，fe形成與母阖案Ρ1具所定位置關 偽的2糎由 '維標記所構成之對__記2 1 A , 2 1 Β β同樣; 1T line 449672! \ 1 Η 7 Through the cooperation of the staff of the Central Standards Bureau of the Ministry of Didu, Du Yinju 5. Description of the invention () 1 1 Garlic plate J: In the manufacturing method of the decoration, 1 is determined Enlarged 1 1 1 The second pre-enlarged second pattern is divided into a large number of m masks m 1 Η 1 1 (P 1--P fi) ♦ The majority of the M master mask m cases are sequentially — if ) 1 tL 1 and _ — m will be reduced and projected on a certain plate ⑷ to form a mask for the mid-day exposure with the 1st case, and the actual exposure is used instead of 1 1 photomask | The reduced view of the leaf blade m is transferred to its substrate 0} ± read 1 1 event η According to the wood W t t assume that from the device to be formed on the leaf plate η 1 1 The multiple to the 1mth case is β times U is an integer greater than 1, fill in 1 (Half integers, etc.), from the first 阖 栞 to the second _ case the multiple of bismuth is α times 1 1 (C r and the same t are integers or semi-integer greater than 1) which t 1 above each female 1 I chair model _ case The line width ΕΠ becomes a • β times of the device _ scheme. Therefore,> 1! When the m master mask pattern is to be described by an electron beam device, etc., false 1 π is the difference between the line width and m.厶 ίΐ 畤, the line width error of the device case! Large upper ^ * s. Η is reduced to Δ d / a-β »Therefore, it is possible to form a t 1 decoration map m 〇1 1 with considerable accuracy and η» with m in In the manufacturing method of the device, the mother mask is to divide the 2nd 1 1 line copper case into a majority of N groups (N is an integer of 2 or more) _ case 1 ρ 1--PN, Q 1 »* v QN), and the majority of the mother mask patterns of the N group are combined in accordance with the sequence of I 1, and the size is reduced and projected onto the predetermined substrate (4). 1 is formed by m The mask for the actual exposure of the first pattern 04) is more suitable! Ideal 0 I As described in the above, because of the reduced image I 1 荦 # of the master mask pattern of the button, it is printed with the average effect of 5 Reducing the 1 1 error of its tracing device κ >. Projection optics required for editing small transfer master masks% Loss of system 1 1 -1 8- 1 1 1 1 This paper standard is applicable to Chinese National Standard (CNS > Λ4 gauge 210 210-public »> Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 4 4 9 6 7 2 Λ? ΙΠ 5. Description of the invention (π) True and other shadow keys. The mounting method of the device of the wooden invention is a method of manufacturing a device that forms a predetermined road on a certain board. It is to reduce one circuit in the first circuit diagram corresponding to the enlarged circuit pattern. The case unit (P a) is formed on the mother mask (M R1), and the case unit of the mother mask is pseudo-transferred to the predetermined substrate 5 () with the positioning background to form a film. There is an actual exposure mask (MR) on the first circuit pattern, and a reduced pattern of the pattern of the actual exposure mask is transferred to the device substrate W. According to the present inventor, since the actual exposure mask can be made in a short space, the device can be made with high accuracy in a short time. ί 宥 实施 例 1 The following #Illustrates an embodiment of the present invention. mi- 1st is the mask manufacturing process of the first embodiment of the present invention. In 1-, the mask to be manufactured is the work mask 34 used when the semiconductor device is actually manufactured. This work wedge 34 is formed on one surface of a light-transmitting substrate made of quartz glass or the like, and is formed of chromium (C!), Molybdenum silicide (MOS 2 or the like), or another mask material for transfer. Original pattern 2 7 persons. In this work mask 丄, an original pattern is sandwiched therebetween to form 2-tilt alignment marks 2 4 A, 2 4 B. In other words, X is used as the mask 34, which is 1 / fold of the projection optical system used by the optical projection exposure device (/ S is an integer or half integer greater than 1, an example of which is 4, 5, or fi, etc.) Edit the small projection on the OE, in the first __, is the original pattern of I as a mask 3 4 2 7 / / 5 times the reduced image 2 7 W in the coating light-1 9-This paper size applies Chinese National Standard (CNS) Λ4 specification (210 乂 297 cm) n * In] ί- 1..1 I .nn I.. \ 、 一 sOJ1 .- 'HI (n-(¾ For the matters needing attention, fill in this I) 4 9 6 7 2 A7 H7 V. Description of the invention () (read the notes beforehand and then fill in the shooting areas on the crystal HW attached to this page 48 after exposure, After the development and etching processes, predetermined circuit patterns 35 are formed in the respective photoreceptive areas 48. In addition, in the embodiment of the present invention, the non-rotationally symmetric aberrations of the projection image of the projection exposure device, and the loss characteristics, etc. The imaging characteristics are measured in advance, and the measurement results will be used when manufacturing work masks as described later. In the following, Example 1 in the method of manufacturing a work mask for a photomask is added. In the first coax, the circuit pattern 35 of the final semiconductor device will be designed first. The circuit pattern 35 is formed in a rectangular region M whose orthogonal sides are dx and ri y. For example, in the case of β storage, the circuit diagram is enlarged by 3 to 5 times and edited on the computer's image data. The edge of the if · crossing is Nai * d X, /? * The original pattern 27 formed by the rectangular area of dy. The multiple is the reciprocal of the reduction factor (〖/ β) of the projection exposure device used by the work mask 34. Furthermore, in the projection exposure device used by the work mask 34 If the reduced image will be inverted and projected, the Xiaolu pattern will also be reversed and enlarged to make the original version. 27 After receiving the seal from the Ministry of Standards and Technology Bureau's Consumer Cooperatives, the original version 2 7 Zoom in (α is an integer or half integer greater than 1, an example of which is 4, or fi), edit the edge of the image on the image material to α /? · ≪ 1 ×, α do_ dy The mother country made up of a rectangular area: ί 〇, and divide the 詨 a pattern 3 〇 into α 锢 in the vertical and horizontal directions to edit X in the image W material α Wide mother pattern P], P 2, P 3, · _ _ PN (H: α 2). "= Γ" is shown in the first plot. Moreover, this mother _ case 3 G division number α It does not have to be the same as the magnification of the master pattern 2 7 to the mother_case 3 fi multiple α. ^ Then these master patterns PU i = 1 ~ N) are individually edited to become electronic-20 "This paper applies Chinese national standards according to the scale (CRS > MWJf, (210X; W 公 #) Ministry of Economics, Central Bureau of Standards and Technology, Shellfish, Consumer Cooperation, Du Yinzhuang, 14 9 6 7 2 Λ " Η7 5. Description of the Invention (I?) Laser beam tracing device, etc.), and the master case P i is individually transferred to the mask mask R i as a master mask at equal magnifications. For example, if you want to use the original model R], you need to form a thin film of masking material such as inscription or aluminum silicide on a plate of a transparent glass such as S English glass, and save it | _ 声 布 霄 芊 Ray After the Hang Lian agent, use a thunder beam to trace the jujube device to its zongzi ray__: draw an isometric image of the first mother pattern P 1 of the date, and then develop the channeling ray uranium agent and then etch Processing and anti-axing agent peeling, etc., form a mother_dish P 1 in the pattern region 20 on the mask original plate R 1. When 眈, on the mask original plate m, fe forms 2 which is false relative to the predetermined position of the mother case P1. The pair formed by the 'dimensional mark __ 2 1 A, 2 1 Β β is the same

的，在其他掩模晾版R i也闬電子束描軎裝置等，分別形 成母圖案P i及對準檫記2丨A , 2 1 B。該對準標記2 1 A , 2 1 B ，是在於以後要做併圖時，作為對準位置之用。 在本實旃例中，由於其電子束描畫裝置（或雷射光束描 害裝臂）所描害的各母圖案Pi是將闱販圖案27放大α倍之 _窠，因断各描軎資料的數暈是比將原販國案2 7直接描 棗時減少到1 / 2稈度„又，母圖案P i的最小線寬度是 卜h闱版圖案2 7的最小線寛度大α倍（例如5倍或4倍）， 因而，各母圖案P i可镝別用晾來的電子射線抗蝕由 電子束描棗裝置在短時間内，以高精度的完成描事。又 一口闞成n η掩模原版m〜R. N後，如後逑的，可將其反 複使闬，以製造所需Η數之工作掩模34,因而製造掩模 原版R 1〜R Ν所需的時間，並不是很大的負換。 —2 1 - 本纸張尺度適用中國國家標準（CNS >六4現枯（210><2们公牮） ---------^---«-------訂—.-----線- (^先閲讀背而之注意事項咚填寫本頁) 9672 Λ7 Η7 五、發明説明（^) 即，將這些N Η掩模原版Ri的母_案？1之l/cr倍縮小 _像P〖i ( i = 1〜N ), —闹併圆，一而轉印就可製成工作 撺樽3 4。 第2圈是槩製诰其工作掩模34時所使用的光學式縮小 捋銨犁曝光裝菁，在該第2阖中，要曝光時，是由曝光 光滁、照度分佈均勻化用的複眼透鏡、照明糸統光_、 光柵（可變視界光阐）及聚光鏡条統等所構成的照明光學 系統]，將曝光光線I L照射於掩模台上的掩模。在本例 中，掩模台2上是放置第i張（i= 1〜N)的掩模原版Rie 又，曝光光線所使用的是水銀燈等的紅外線（波長3 6 5 η b ) 等之亮光線，或氪氟UfF)受激準分子雷射（波長248nffi) 、氬氟（A r F >受激準分子雷射（波長1 93 n m )或氟（F 2 )雷射 (波長】7 η B ),等之外，也使用釔鋁石榴石（Y A G }雷射的 高諧波痒生裝置等所産生的曝光光線。 在摘模原版R ί的照明區域内之圖案圖像，會經由投影 光學条統3 ，.以縮小倍數1 / α ( α是例如，5 ,或4等）投影 於τ作掩模34用的某板4之表商〇基板4是例如為石英 玻璃等之透光性基板，而在其表而的圖案匾域25(參照第 4阖）形成鉻或矽化鉬等的掩模材料之薄膜，並形成將該 圖案區域2 5夾於其間的2個由二維標記所構成之對準標 紀2 4 A、2 4 Β 〇又，在®板4的表面塗布光阻劑，以覆蓋 笋掩模材料 以下，在平行於投影光學糸統3的光軸A X 之方向收Z軸，垂直於Z軸的平而而平行於第2圖紙而 方向取X軸，垂苜於笫2 _紙而方向取Y軸，以説明之。 -2Z- 本紙張尺度適用中國國家標準（CNS ) Λ4現枋（210Χ297*/ί ) 岢先間讀背而之注意事項再填艿本頁) 、\-fl 經滴部中央標擎历另工消f合作社印裝 4496 72 Λ7 H7 五、發明説明（μ ) 首先.掩模台2使在其上商的掩模原版Ri在XY平商内 定位^在埯模原版R i的丄方設有檢拥其對準標記2〗A , 2 1 B 之對準檢測器1 4 A， 1 4 Μ第2圖中只阖示14 A ),目.，掩模 台2的位置是由圖未示的雷射干擾儀所潮定，而依據其 潮定俏、對準檢測器1 4 Λ ,丨4 B的檢潮結果及主控制条統 9來的捽制資訊*以控制掩模台2的動作β —方面，基 板4是被裒空吸仵而被保持在圖未示的基板保持器上， 转莊板保持器是被固定在試件台5上，而試件台5是被 固定在X Υ铃上η試件台5是以自動聚焦方式，控制基 板4的聚焦位置（光軸A X方向之位置），及傾斜角，以使 某板4的表面和投影光學糸統3的影像商為一致。又. χ γ台fi是例如以線性電動機方式在轶座7上的X方向及 γ方向定位。 由固定在忒ft台5丄部的移動鏡8»及與其面對配置的 雷射千#儀8 , _定試件台5的X座標、Y座標及旋轉 經步-部中央標萆局貝工消費合作社印製 (¾先閱請背而之注念事項再填巧本頁) 角，其測定價會供應於基板台控制条统1 fl ,及ΐ控制系 統ί) β移動鏡8Β!是包括第3圃所示的X軸之移動鏡8·Χ和 Υ軸之移動鏡8ntY。基板台控制条统10是根據上述測定值 矽丰枰制糸統9來的控制資訊，以控制X γ台G的線性電 動機等之動作。 乂，杵木例中，在其掩模台2的旁邊設有棚架狀的掩 楫庫】（；，在掩模鹿U内的Z方向依序排列之支承板1 7上 ，承載替掩楔原販Rl，R2,...RNe這些掩模原販R1-RN是在 其各傾中形成有將第1圖的母案圖3 6分割的母圖案P1〜PN之 掩模（母掩模）者。掩模庫16是由滑動裝置18所支承，而可在 本纸張尺度適用中國國家標隼（CNS ) /\4叱枋（2】ΟΧΜ7*ίί ) ^ 49S 72 Λ7 H7 經浐部中次標苹局貝工消费合作社印狀 五、發明説明（ >-> ) 1 1 7, 方 向 η 動 Θ δπ 1 在 m 模 2 和 掩 槔 庫 1 6之 間 ί 設 有 具 1 1 I 轉 動 如 而 πΐ 在 1 方 向 所 定 範 鬨 移 動 的 托 锊 之 掩 模 裝 載 1 1 機 1 il 〇 梓 制 統 9 經 介 以 滑 動 裝 置 1 S 調 m 掩 模 庫 i 6的 ifi 1 先 1 7 方 向 位 青 後 ' η 制 掩 模 裝 載 機 1 9的 動 作 y 而 可 在 於 掩 間 讀 1 模 庫 1 ( 中 m 所 欲 支 承 板 1 7 與 掩 模 台 2 之 間 i 交 接 所 欲 之 背 而 1 之 1 掩 模 庳 版 R 1 〜 RN 之 構 成 者 〇 在 弟 2 圖 中 是 使 掩 模 庫 1 6 中 λϊ- 1 事 m 第 ί Η 掩 模 原 版 R i 放 置 在 m 模 台2上 者 0 項 fl 1 乂 > ΐ 控 制 % 統 9 丄 9 連 接 m 磁 盤 裝 置 等 之 記 億 裝 置 寫 1 .以 本 1 ί 裝 W 11 中 儲 存 m 曝 光 資 料 文 卷 Q 在 曝 光 資 料 文 1 I 卷 中 儲 存 m 撺 模 原: 版 R 1 •~v^ R Ji的 相 η 位 置 m 像 和 對 準 資 訊 1 1 m 使 用 木 例 所 製 造 的 工 作 掩 m 之 投 影 曝 光 裝 置 的 投 1 1 m 阔 馋 ί持.影光學条統） 之 成 像 特 件 音 料 等 Ο 訂 在 木 實 例 中 的 對 某 板 4 曝 光 時 疋 將 第 1 Η 掩 模 原 1 版 R 1 的 缩 小 圖 m 在 於 基 板 4 上 的 第 1 抬 攝 區 域 的 曝 光 7V 1 1 了 後 r 由 X Y台 β 的 步 級 移 動 將 基 板 4 上 的 下 1 攝 區 1 I 域 移 動 到 投 影 光 學 条 統 3 之 曝 光 區 域 〇 而 與 此 並 行 操 作 1 1 的 是 掩 模 台 2 上 的 掩 模 原 販 R 1 經 由 掩 模 裝 載 機 1 S被 放 回 線 到 掎 模 庫 1 6 9 下 一 轉 印 對 象 的 掩 模 原 版 R2會 從 掩 模 庫 16 1 I m 由 掩 模 裝 m 機 1 9被 放 置 於 掩 模 台 2 上 0 然 後 1 由 對 準 ! 1 檢 m 器 1 4 A , 1 4 Β將 掩 桿 m 版 R2的 位 置 對 m 後 J 該 掩 模 原 1 1 版 R ll 的 縮 小 圖 像 Γ=ϊ 經 由 投 影 光 學 % 統 投 影 於 棊 板 4 上 1 I 的 上 绒 攝 區 域 曝 光 y 而 以 後 9 以 步 進 秉 複 方 式 > 對 基 ! I 板 4 所 剩 下 的 m 域 1 以 所 對 m 的 掩 模 原 版 R2 RN依 序 [ I 進 Χί 其 縮 小 圖 像 之 曝 光 〇 1 1 1 -2 4 - 1 1 1 1 本紙張尺度適用中國國家標準（CNS )八4叱枯（2!0X297»处） 449672 經涞部中央標嗥局貝工消費合作社印11 Λ7 Β7 五、發明説明（4 ) 又，第2圖的投影曝光裝置是總括曝光型者，但也可使用例 如步進掃描方式的掃描曝光型之编小投影曝光裝置以取代之β 在掃描曝光型中，其在曝光時，掩模原販Ri和基板4會受到 役銳光學条统3以編小倍數比萊之間步掃描。使用掃描 曝光犁曝光裝青時，可在於如後掉的以總括曝光型是難 於修iF之馮差（不對稱誤铮）時，也可加以修ΪΗ之情形。 其次，如此的使掩模原板R丨〜R N的縮小_侏曝光於基 板4 I.之際，必須對相鄰接縮小圖橡之間高精度的併圖 (接合）。因眈，必須高精度的將對應於基板4之抽攝區 城{設為S U對準。為了這禪對準，在本例投影曝光裝置 中，設有撺模及某板用的對準機構。 第3圖是本宵絢例的掩槔對準機構。在第3圖中，透 光袢棊準標記構件]2是固定在試件台5上的基板4之近 旁，闹在苌準構件1 2 1:,在X方向相隔所定間隔形成例 如為十宇塑的】對基準標記1 , m ^又，在基華標記 1 3 Λ， 1. 3 B的苌部設有利用從曝光光绵U分岐出來的照明 光線將棊準櫸記UA , 照明到投影光舉条統3側之照 明系統。於對準掩模原版R i時，驅動第2圖中的Y X台（Ϊ， 而如第3圉所示的使某筚標記構件1 2上的基準檫記1 3 A , 1 B定位在該祐準標記1 ：U， U B的中心大致與役影光學糸 統】3的光軸A X為一致之位置。 乂，在镝模阍版K i的晒案面（下而）上，將圖槩區域2 0 在X方向夾於其間的形成例如十字_之2睹對準檫記2 I A ,21 B。塔'準檫記！ a A , 1 3 14的間隔是設定為和檫準檫記 -2 5- 本紙張尺度適用中國國家標率（CNS ) Λ〇)ί格（2ΙΟχ：?(^ϋ"7 {^先間讀背而之注憑事項-^^巧本頁) 、vsIn other masks, R i is also equipped with an electron beam tracing device, etc., to form a mother pattern P i and alignment marks 2A and 2 1B, respectively. The alignment marks 2 1 A and 2 1 B are used as alignment positions when a subsequent drawing is to be performed. In this example, each mother pattern Pi traced by its electron beam drawing device (or laser beam traces the arm) is a magnification of the hawker pattern 27 by a factor of _ 窠. The number of halos is α times larger than the minimum line width of the mother pattern P i is less than that of the original pattern 2 7 when the original national case 2 7 is directly depicted on the date. (For example, 5 times or 4 times), therefore, each of the mother patterns P i can be used to complete the tracing in a short time by the electron beam tracing device with an electron beam resist. After n η mask original plate m ~ R. N, it can be repeatedly used as described later to produce the required number of working masks 34, so the time required to manufacture the mask original plate R 1 ~ R Ν , Is not a big negative conversion. —2 1-This paper size applies to the Chinese national standard (CNS > 6 4 is dead (210 > < 2mens) 牮 --------- ^- -«------- Order -.----- line- (^ Read the back notice first and fill in this page) 9672 Λ7 Η7 V. Description of the invention (^) That is, these N Η The mother of the original mask Ri_case? 1 / l times smaller than _ like P 〖i (i = 1 ~ N),-It is round and round, and it can be made into a work bottle 3 4 after the transfer. The second circle is an optical reduction ammonium plow exposure device used to make the work mask 34. In this second frame, when the exposure is to be performed, the illumination optics is composed of exposure light, a fly-eye lens for uniformity of illumination distribution, illumination system light, grating (variable field of view), and condenser lens system. System], the exposure light IL is irradiated onto the mask on the mask table. In this example, the i-th (i = 1 to N) mask original plate Rie is placed on the mask table 2 and the exposure light is used Bright light such as infrared light (wavelength 3 6 5 η b) such as mercury lamp, or fluorinated UfF) excimer laser (wavelength 248nffi), argon fluoride (A r F > excimer laser ( Wavelength 1 93 nm) or fluorine (F 2) laser (wavelength) 7 η B), etc. In addition to the exposure light generated by yttrium aluminum garnet (YAG} laser high-harmonic itching device). The pattern image in the illuminated area of the original mold release R ί will be projected on the reduction optical factor 1 / α (α is, for example, 5 or 4 etc.) through the projection optical system 3. τ The surface quotient of a certain plate 4 used as the mask 34. The substrate 4 is, for example, a light-transmitting substrate such as quartz glass, and chromium or molybdenum silicide is formed on the surface of the pattern plaque field 25 (refer to Section 4). A thin film of masking material is formed, and two alignment marks composed of two-dimensional marks sandwiching the pattern area 25 are formed. 2 A, 2 4 B 〇 Also, the surface of the ® plate 4 is coated with light The resist is to cover the bottom of the bamboo mask material, and the Z axis is taken in a direction parallel to the optical axis AX of the projection optical system 3, and the X axis is flat and perpendicular to the Z axis and parallel to the second drawing. Take the Y-axis in the direction of 笫 2 _ paper to illustrate it. -2Z- This paper size is in accordance with Chinese National Standard (CNS) Λ4 Now (210 × 297 * / ί) (Notes for reading before and then fill in this page), \ -fl F cooperative printing 4496 72 Λ7 H7 V. Description of the invention (μ) First, the mask table 2 positions the original mask Ri of the quotient on the XY plane quotient ^ It is provided on the side of the original mold ri The alignment detectors 2 A, 2 1 B, and the alignment detectors 1 4 A, 1 4 M only show 14 A in the second figure), and the position of the mask table 2 is not shown in the figure. The laser jammer is determined by the laser interferometer, and the tide detection results of the alignment detectors 1 4 Λ and 4 B and the control information from the main control system 9 are used to control the Action β-On the other hand, the substrate 4 is sucked and held by a substrate holder (not shown), the transfer plate holder is fixed on the test piece table 5, and the test piece table 5 is fixed on X 试 bell on the η test piece table 5 is an auto-focusing method that controls the focus position (position on the optical axis AX direction) and the tilt angle of the substrate 4 so that the surface of a certain plate 4 and the image quotient of the projection optical system 3 Be consistent. In addition, the χ γ stage fi is positioned in the X direction and the γ direction on the pedestal 7 by a linear motor, for example. The moving mirror 8 »fixed on the 丄 ft table 5 and its facing laser unit # 仪 8, _fixed the X coordinate, Y coordinate and rotation step of the test piece table 5 Printed by the Industrial and Consumer Cooperatives (¾ Please read the note below and fill in this page) corner, and the measured price will be supplied to the base plate control system 1 fl, and the ΐ control system ί) β mobile mirror 8B! Yes It includes the X-axis moving mirror 8 × and the Y-axis moving mirror 8ntY shown in the third field. The substrate stage control system 10 controls the operation of the linear motor of the X γ stage G and the like based on the control information from the Si Feng Feng system 9 based on the measured values. Alas, in the example of a pestle, there is a shed-like masking library next to the mask table 2] (;, on the support plate 17 arranged in the Z direction in the mask deer U in order, carrying a mask Wedge original vendors R1, R2, ... RNe These mask original vendors R1-RN are masks with mother patterns P1 to PN (mother mask The mask library 16 is supported by the sliding device 18, and the Chinese national standard (CNS) / \ 4 叱 枋 (2) 〇ΧＭ7 * ίί) ^ 49S 72 Λ7 H7 warp Printed by the Ministry of Science and Technology, Ping Bureau, Shellfish Consumer Cooperative, V. Description of the invention (>->) 1 1 7, Direction η movement Θ δπ 1 between m module 2 and shelter 16 1 1 I rotate as πΐ moves in the direction specified by 1 to move the mask of the bracket 1 1 machine 1 il 〇 Azumi 9 9 sliding device 1 S tune mask mask i 6 ifi 1 first 1 7 The direction of the rear position is 'n', the action of the mask loader 19 is y, but it can be read in the mask 1 mold library 1 (m The desired support plate 1 7 and the mask table 2 are connected to each other as desired, and 1 to 1 constitutes the mask mask R 1 to RN. In the second figure, the mask library 16 is λϊ- 1 thing m No. Η 原 The original mask R i is placed on the m die 2 0 item fl 1 gt > ΐ Control% 9 9 丄 9 Connected to the m-disk device, etc., and write billions of devices. 1. Take this 1 Storing m exposure data file in W 11 Q Storing m exposure file 1 I m Makihara: Version R 1 • ~ v ^ R Ji Phase η Position m Image and alignment information 1 1 m Manufacture of a projection exposure device with a work cover of 1 m (1 mm wide, shadow optical system), special imaging materials, audio materials, etc. 0 When you expose a plate 4 in the wooden example, you will cover the first 1 The reduced view m of the mold 1 version R 1 is the first up-view area on the substrate 4 After the exposure 7V 1 1, the step 1 of the XY stage β is used to move the lower 1 shooting area 1 I field on the substrate 4 to the exposure area of the projection optical system 3 and the parallel operation 1 1 is a mask. The original mask R 1 on the stage 2 is put back into the mold library 1 6 through the mask loader 1 S. The mask original R 2 to be transferred next is loaded from the mask library 16 1 I m by a mask. The m machine 1 9 is placed on the mask table 2 0 and then 1 is aligned! 1 m detector 1 4 A, 1 4 Β will be the position of the mask m plate R2 to m J the mask original 1 1 plate R The reduced image of ll = ϊ is projected through the projection optical% system onto the velvet area of 1 I on the holographic plate 4 to expose y and then 9 in a step-by-step manner > aligning to the base! I plate 4 remaining m Domain 1 with the original mask R2 RN of m in order [I 进 Χί Exposure of its reduced image 〇1 1 1 -2 4-1 1 1 1 This paper size applies to China Home Standards (CNS) 8 4 (2! 0X297 ») 449672 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs, Shellfish Consumer Cooperatives 11 Λ7 Β7 5. Description of the Invention (4) In addition, the projection exposure device of Figure 2 is a summary For the exposure type, it is also possible to use, for example, a stepwise scanning type scanning exposure type to arrange a small projection exposure device to replace the β. In the scanning exposure type, during exposure, the mask manufacturer Ri and the substrate 4 are subject to sharpening The optical system 3 scans in steps of a small multiple of Bilai. When using a scanning exposure plow to expose blue, it can be repaired when the overall exposure type is difficult to repair the iF's difference (asymmetric error). Secondly, in order to expose the reduction and thickness of the mask original plates R1 to RN to the substrate 4 I., it is necessary to align (join) the adjacent miniatures with high accuracy. Because of this, it is necessary to set the extraction area city {corresponding to the substrate 4 with high precision to the S U alignment. For this Zen alignment, the projection exposure apparatus of this example is provided with a mold and an alignment mechanism for a certain plate. Fig. 3 is a mask alignment mechanism of this beautiful example. In Fig. 3, the light-transmitting quasi-marking member] 2 is near the substrate 4 fixed on the test piece table 5, and is located on the quasi-member 1 2 1: It is formed at a predetermined interval in the X direction, for example, Shiyu. Plastic] For the reference mark 1, m ^, and in the base part of the Jihua mark 1 3 Λ, 1. 3 B is provided with the illumination light from the exposure light U U to illuminate the beech mark UA, illuminated to the projection The lighting system on the 3 sides of the lighting system. When the original mask R i is aligned, the YX stage (Ϊ) in FIG. 2 is driven, and the reference mark 1 3 A, 1 B on a certain mark member 12 is positioned at the position shown in FIG. 3. Youzhe mark 1: The center of U and UB is approximately the same as the optical axis AX of the Yageo Optical System] 3. On the exposure surface (bottom) of the model K i The area 2 0 is sandwiched between the X direction, for example, the cross _ 2 sees the alignment mark 2 IA, 21 B. The tower 'Zunjiji! A A, 1 3 14 The interval is set to 檫 Zhujiji- 2 5- This paper scale is applicable to China National Standards (CNS) Λ〇) ί grid (2ΙΟχ:? (^ Ϋ " 7 {^ Notes to be read before and after-^^ 巧 本页), vs

LI I" 4 496 7 2 Λ7 B? 五、發明説明（-Ο y f a , 21 r的，由投影光學条統ί)所编小的！U像之間隔大 致相箅，而如丄钵的在於使某準標記！ 3 A， 1 3 B的中心和 光軸A X大致為一致之狀態下，從铱準標記構件〗2底部， W和曝光光猱Π,柙間波長的照明光镍照明時，可使基準 栲紀U A，〗：U丨的由投影光學条統3所放大的圖像分別形 成在掩模原販R i上的對準標記2】A，2】B之近旁。LI I " 4 496 7 2 Λ7 B? Fifth, the description of the invention (-〇 y f a, 21 r, compiled by the projection optical system) small! The distance between U images is so large that they are similar to each other. When the center of 3 A, 1 3 B and the optical axis AX are approximately the same, from the bottom of the iridium quasi-marking member 2 and the illumination light of the wavelength W and the exposure light 柙 Π, 柙 is illuminated by nickel, the reference period UA , 〖: The images magnified by the projection optical system 3 of U 丨 are respectively formed near the alignment marks 2] A, 2] B on the mask original dealer Ri.

在痦哩對準標記21A, 21B的上方，設有可將從投影I 學务1 3側來的照明光線反射到± X方向之反射(ί 2 2 A , 「 \ ：2 2 R，&gt;具備可接收反射鏡2 2 Λ、 2 2 B所反射的光線的，以 荦裯摘埠（t. h r 〇 ti g h t. h e r e U c u〗e i ΐ T R )方式的圖像處理 方式之對準檢测器1 4 ,Α， 1 4 tU對準檢測器1 4 A , 1 4 Β各自 具備成像条統和霄荷耦合裝置（以下稱C C I))攝影機等的二 绯攝影元件，由該攝影元件怕攝對準標記2 1 A , 2 1 B及其 所對瞧的基華擇記1 3 Λ，} 3 B之影像，將其攝影信號供應 於第2閾的對準信號埯理条統〗5。 本紙張尺度適用中國國家椋準（CNS ) Λ4現梠（210Χ297公¢) f[ - n I _ n I _ A I _ I __ _ &lt;1· T n _ 爿 ，-=5 Av^. (誚也閲讀背而之注念事項再填寫本頁) 求在景在所Ri在pi ，像移位的版位 案 理影偏定個原定 圖 處 3 置 2 各模被 母 像 1 位台在掩會R1 圖A,的模入及， 販 以13紐掩纳以η原 圖 加記 2 將可， 模 號 _ 其 SMlBil。掩 信準將統，2f[:的 影基 ，条的 AM 置 3 攝於置制稱21(¾位統 該對移控對記P1之糸 將相偏主為榡案3R學 15的置。互率画 1 光 統1B位 9氧對母A,影 条2 的統移，之18投 理A,向糸偏此内記由 處21方制置由20榨猙 號記 Y 枠位。域準 ， 信椁和 ΐ 的内區某之 準華向於組阑案於言 對對方應 2 範阔對換 出 X 供其求的相 經淖部中央標準局負工消费合作社印裝 449672 Λ7 H7 經斌部中央標準局負工消費合作社印奴 五、發明説明 ( χΓ ) 1 I 之 縮 小 阃 m 中 心 (曝光中心） 在 實 質 丄 被 定 位 在 基 準 標 1 1 1 A , 1 中 心 (大致在光軸Λ X上&gt; 而 與 母 阖 案 Pi的 1 1 輪 m (圖案Μ域2 0的輪廊）或 交 的 邊 分 別 被 m 定 於 和 r. ta 1 先 I X 軸 及 Υ 軸 平 行 〇 在 此 狀 態 下 &gt; 第 2 圃 中 的 控 制 % 統9 間 讀 1 會 將 由 雷 射 干 擰 m 8 所 測 定 的 試 件 台 之 X 方 向 及 Y 方 而 1 之 1 向 雄 榑 (^ P ” Υ F 、）T 以 儲 存 9 結 東 掩 模 原 版 R i 的 對 準 作 ϊί- 1 事 黎 Λ 此 後 1 可 將 試 件 台 5 丄 的 仟 意 點 移 動 到 母 圖 案 Pi 項 4 1 的 曝 光 中 心 〇 寫 1 咫 本 又 ' 第 1 鬮 中 在 投 影 光 學 % 統 ；ϊ 的 倒 面 t 也 設 有 檢 Τ\ 1 I 剷 板 4 上 的 橾 記 位 菁 所 用 的 ί 以 偏 軸 (off a X- i s ) 方 式 1 1 的 阃 m 爆: W 方 式 之 對 準 檢 潮 器 2 3 〇 對 率 檢 m 器 2 3 是 對 光 1 1 罩 .以 卯 烕 光 件 的 寬 賴 帶 照 明 光 線 照 明 被 檢 制 標 記 而 將 J 1· 丁 被 檢 m m 記 的 影 像 由 CC R攝影機等之二維攝影元件攝影， 〇 J ί 將 榻 m 號 供 m 於 對 m 信 號 處 理 % 統 1 5 0 又 f 對 準 檢 測 1 1 器 2 Μ 的 檢 m 中 心 與 掩 模 原 販 R i 的 圖 案 投 影 圖 像 中 心 (曝光 1 1 中 心 )之間的間隔（ 基 線 黡 )是用基準標記構件1 2上的所定 1 1 基 m 記 預 先 求 出 ， 儲 存 在 ΐ 控 制 条 統 9 内 〇 線 如 第 _ 所 示 j 在 霖 板 4 上 的 X 方 向 之 邊 端 &gt; 形 成 例 I I 如 為 + 字 犁 的 2 個 對 m 記 2 4 A , 2 4 Β 〇 而 當 掩 模 原 販 R 1 1 的 對 苹 作 業 結 束 之 後 ΐ 驅 動 X Υ 台 使 第 λ _ 的 基 準 m i 記 1:3 A , 1 Β 茶 板 丄 的 對 缋 記 2 4 A ' 2 4 Η依 序 在 第 1 1 1 1国 的 對 ψ 檢 m 器 2 3 之 檢 糊 域 柊 勒 f 以 阐 定 各 個 準 標 I f Λ , 1 ;Ui 對 準 m 記 1 4 Λ， 1 4 B的 對 於 對 準 檢 m 器 2 3的 1 I 檢 m 中 心 之 位 冒 偏 移 星 0 .¾ t 將 在 於 準 標 記 1 3 A t 1 3 B 1 1 -2 7 _ 1 1 1 1 本紙張尺度適用中國國家標準（CNS ) W規枯（21〇χ2^?公殍） 449672 A7 B7 經濟部中央標準局員工消費合作杜印® 五、發明説明（4) 及對準檫記24A, 24B已由對準檢溯器23所檢拥時之試件台 5的位置，以雷射干擾儀8加以測定。這些潮定結果會供 應於ΐ控制条統9 ,主控制条統9會利用這些潮定结果求 出基準標記1 3 A , 1 3 Β的中心與對準檢_器2 3的檢測中心成 為一致時的試件台5之座標（ΧΡ0ΥΡ。），及對準標記24A ,2 4 Β的中心舆對準檢測器2 3的檢測中心成為一致時的試件 台5之座_(^1\'卩2)。由此，結束基板4的對準作業。 其結果是，基準檫記1 3 A， 13 Β的中心亦對準標記2 4 A , 24B之間在X方向及Y方向之間隔會成為（XPo-XPi，及 YPo-YPl·)。因此，驅動XY台6 ，使其相對於掩模原販Ri 對準時的試件台5之座標UF«、YF0),移動該間隔（XP0 -XPt，YPo-YPt)份暈，就如第4圖所示的，可使基板4 的對準標記2 4 A , 2 4 B之中心（基板4的中心）高精度和掩模 厣販R i的對準標記2 1 A , 2 1 B之中心（曝光中心）成為一致。 從此狀態下，驅動第2圖的XY台G ，使試件台5在X方向 及Y方向移動，就可在基板4上的相對於其中心之所欲位 置上，曝光掩模原販Ri的母阈案Μ之縮小圖像Pli。 即，第4圖是將第i片掩模原販Ri的母_案Pi經由投 影光學糸統3縮小鹎印於基板4上之狀態β在該第4圖 中，以基板4表面的對準標記2 4 A , 2 4 Β的中心為中心， 而由平行於X軸及Y軸的邊所圍繞的矩形圃案區域25被 虛擬的設定在主控制条統9内。圖案區域2 5的大小是將 第1圓母_案3 6縮小到1 /«倍的大小，圖案區域2 5也被 虛擬的設定在其X方向及Y方向分別均等分割成α偁的 抬攝區域 S 1 , S 2 , S 3 . . S N ( Ν = α 2 )。拍攝區域 S i ( i = 1 〜N)的位置是將第1圖的母圖案36假設經由第4圖的投 影光學条統3縮小投影時，是設定在第i K母案Pi的縮 _ 2 8 _ (請先閲讀背面之注意事項再填寫本覓) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 449672 Α7 Η7 經沪部中央標準局Κ工消費合作社印製 五、發明説明 ( ) 1 1 小 圖 饯 P I i之投影位置。 1 1 | 如 要 使 用 木 W 施 例 的 X 作 掩 模 3^ 之 投 影 曝 光 装 置 1 1 是 具 有 理 想 的 投 影 _ 像 成 像 待 件 時 主 控 制 統 可 由 1 先 1 m 科 第 2 m 的 XY台 (ϊ \ 而 在 第 4 m 中 1 使 基 板 4 上 的 第 間 ifi 1 | ] 塊 抬 搞 跷 域 8 i 之 中 心 和 」. 述 由 對 準 作 業 所 求 锝 的 掎 模 背 而 1 之 i 的 fel 阖 案 Pi 縮 小 m m Ρ Ϊ i之曝光中心為- 一致。 然後 /i ί 事 牛 梓 制 % 統 9 使 第 2 m 的 照 明 光 學 条 統 1 内 的 曝 光 光 項 再 I j m m 始 發 光 » 將 其 m. _ 案 Pi 的 縮 小 圖 像 曝 光 在 基 板 4 上 填 1 本 的 抬 攝 區 域 Si 0 在 第 4 m 中 » 萆 板 4 的 國 案 區 域 2 5内 己 Ά 1 I 被 m 光 的 母 阐 之. 縮 小 圖 m 是 以 實 線 表 示 * 未 曝 光 的 縮 1 1 小 圖 像 是 以 線 表 示 〇 1 1 如 此 將 第 2 _ 的 N 個 m 模 原 版 R 1 RN 的 母 圖 案 Ρ 1 J 訂 P N之 縮 小 m 像 依 序 曝 光 於 某 板 4 丄 相 對 應 的 抬 攝 區 域 S 1 J S N ·&gt; 就 可 使 各 母 園 案 P 1 r^r Ρ N 的 编 小 圖 侏 各 個 和 相 鄰 接 1 1 的 母 圖 案 之 縮 小 _ 像 __. 而 進 行 併 _ » 一 商 曝 先 於 基 板 4 1 Ι 1. η 由 此 ， 存 某 板 4 1: 曝 光 第 1 圖 的 母 圖 案 3 G 縮 小 1 1 線 1 / a 倍 之 投 m HI 馋 2 0 Λ 然 後 將 苹 板 4 丄 的 光 m m 顯 像 ί 施 加 刻 加 T Ήι 特 剩 m 的 杭 _ 離 等 1 以 使 m 板 4 1 1 i: 的 m 圖 m 2 Γ)形 成 為 如 第 1 2 圖 所 示 之 m. m 圖 案 2 7 9 而 I i Lrlrr T|； 成 X 作 掩 槔 ；{4 〇 1 f 再 者 要 曝 光 1 Η 基 板 4 時 ， 由 於 基 板 4 曰 疋 被 固 定 在 1 j 試 件 L » m 而 和 褅 模 原 版 R i 的 交 換 An: m m 的 5 其 位 置是可 1 1 由 常 射 千 槔 儀 iF. 確 的 潮 定 〇 因 此 f 在 ) Η 基 板 4 的 曝 1 I 光 中 * 某 準 m 記 ΐ 3 A , 1 3 R 和 基 板 4 的 位 置 關 偽 不 απ' 有 所 1 1 I '2 9 - 1 i 1 i 本紙乐尺度適用中國國家標準（CNS ) Λ4^彳M 210X2W公郑） 卜 4 496 72 經浇部中央標孳局貝工消费合作社印κ Λ7 B7 五、發明説明（w) 拳化、V搀掩桿原版ϋ i時，q要將掩模原版fi i對準於某 难_紀1 U Η就可，未必對毎一片掩榉原版都要檢測 柒板4 h的對準檫記2 4 Λ， 2 Ο的位買„此時各掩模原販 P i ].的母阖築P i ,也由於對难於苺準樺記〗;ί A ,】3 Β ,和 爾射不·榉係ίί所鸱桦的某板台捽制条統ΐ (1所對於X Y台β 之位黃桦制，而保持在正確的栩互位置ρ俗下，進行曝 光„因此，其各丨圃案問的接合精度，當然的也胄成為高 楮度者。 父，茶板4丄仕，不一定要預先形成對準榡記2 4 A， 2 4 Β 。以此情形時，如丄述的，要將掩模原版K i的母圖案在 某板4上接合縮小轉印時，也將各掩模原販B.i上的所定 掉紀{例如對寧樺記2 1 A， 2 縮小轉印，而在轉印枏郯 槔的掩模陳版母_案的缩小圖侏時，檢潮其標記的潛像 之位靑，由ft檢制結果，以條正其相鄰接掩模原版母圖 案的編小_像之位詈亦可。又，也可利用對準搮記2 4 A , 2 4 Η和L铋濟像兩者，以決定下一母_案的縮小_像所要 轉印的苺板4上的怕攝區域位置之方法。對準標記2 4 A , 2 4 fi是在於利用多數Η掩模原販，將其圖案分别轉印於基 板4丄之前，先用雷射光束描軎裝置或電子束描棗裝置 ，稻先形成在基板4上者。 V ,要將第m片（N s m之3 , m為整數）以後的掩模原販 R i之母丨i丨華編小轉印於基板4上時，由於己經有{ m - 1 )個 母_案的縮小_像轉印在某板4上，因而，也可對其 iffi-Ή個0_築的轉圖悚的全部或一部分之各個檫記濟像 ή η - 本紙張尺度適用中國國家標準（CNS ) AMWM 210Χ297公龄） (誚先閱讀背而之注意事項再填巧本1) -&quot; • - ^ ，-1· 經消部中央標準局Μ工消費合作社印裝 4 49 6 7 2 Λ7 H7 五、發明説明（&gt;?) 加以檢制，以楝得其位置耆訊，她將其多鞍位置眘訊加 .以平均化嚆理，或統計镔理，以決定第《 Η母圖案的縮 小li丨俛Ρ7〖槩轉印的战板4 L之抬攝區域（欉品台5 )位置 P ft時，也可將對應於例如（m -〗）個母阃案的縮小圖像所 轉卜丨丨的怕梅I匾域之令部或其一部分的各锢區域與第ΙΒ Η S區丨案的縮小_俛所要轉印的枘攝區域之間的距離之份 罱，陚萌分别在其兮部或一部分泊攝區域所檢測的榡記 濟俛之位W W訊中後，加以平均化處理、或統計處理， 以決定第m Η咼圖案的縮小丨爾侏所要轉印的基板4上之 抬攝區域位靑η又，也可在上逑平均化處理或統計處理 前，從（® -丨）桐a _案的縮小阚侏所要轉印之抬攝區域 之中，u葆擇和第fn Η母圖窠的编小圃像所要轉印區域 相邬接的牵Φ 1楠泊裰匾域，檢測该所蔟擇拍攝區域的 f费紀濟像.以榑得其位置脊訊之方法者。 乂，要形成在摘楔原販R i的標記也不限定為2掴，其 數目可為1锢或3锢以上。又，要在（a-Ι)値母圖案的縮 小躅像所轉印之抬攝區域分別檢潮的撩記，並不限定為2 艏，其數档可為t個或3楠以丄。此時，也可使每一拍 榀踪域上的所要檢測之榡記數為各摘不相同。又，也可 對母：國察的縮小丨爾悚所轉印的1個泊攝區域上所形成的 罕部樺紀加以檢润，或檢測其一部分的標記者。此時 ,也可使各個抬攝區域丄的所要檢制檫記之配置（數目和 位W屮之牵Φ —埤）為不相同者。又，將多數圖案在苺板 j,接合轉印的方法是在於例如待開平5 - 1 9 7 ] 5 a號公報及 -;n -Above the miles alignment marks 21A and 21B, there is provided a reflection (il 2 2 A, "\: 2 2 R, &gt; Alignment inspection with image processing method that can receive the light reflected by the reflecting mirrors 2 2 Λ, 2 2 B, using the t. Hr 〇ti gh t. Here U cu〗 ei ΐ TR) method The detectors 1 4, A, and 1 4 tU are aligned with the detectors 1 4 A and 1 4 Β, respectively, and are equipped with two imaging elements such as an imaging system and a Xiaohe coupling device (hereinafter referred to as CCI). Take the image of the alignment marks 2 1 A, 2 1 B and the Jihua selection note 1 3 Λ,} 3 B, and supply their photographic signals to the second threshold alignment signal system. 5 This paper size is applicable to China National Standards (CNS) Λ4 now (210 × 297 male ¢) f [-n I _ n I _ AI _ I __ _ &lt; 1 · T n _ 爿,-= 5 Av ^. ( (I also read the note on the back and then fill out this page) Please find the scene in the place Ri in pi, like the shifted layout, the case manager, the original location at the original picture 3, 2 each mold, the mother portrait 1 table In the mask R1 Figure A, the model is sold for $ 13 It will be possible to add 2 to the original image with η, the module number _ its SM1Bil. The masked general, 2f [: the shadow base, the AM of the strip is set to 3, and the system is set to 21 (¾ position. Note that the main part of P1 is the position of 3R and 15 in the case. Mutual rate 1 Light system 1B position 9 Oxygen to mother A, shadow bar 2 is transferred, and 18 is taken into account A, which is biased toward this. The 21-party system is set up by the 20 squeezing number and the Y position. The quasi-Hua-Zun, Xin-Hua, and the inner-zone of a certain quasi-Hua Xiang in the case of the group should respond to the other 2 Fan Kuo exchange X for their supply and demand Printed by the Central Bureau of Standards of the Ministry of Work and Consumer Affairs Cooperatives 449672 Λ7 H7 Insignia of the Central Bureau of Standards of the Ministry of Work and Consumers Cooperatives of the Ministry of Industry 5. The description of the invention (χΓ) 1 I is reduced by 阃 m Center (Exposure Center) Positioned at the center of the reference mark 1 1 1 A, 1 (approximately on the optical axis Λ X>), and the 1 1 round m (pattern M domain 20 circle) or the edge intersecting with the mother case Pi are determined by m Yu is parallel to r. Ta 1 before IX axis and Υ axis. In this state &gt; Control in the 2nd garden % Reading 1 between 9 and 1 will change the X direction and Y side of the test piece table measured by laser dry screw m 8 and 1 to 1 (榑 P Υ Υ F,) T to store 9 东东 mask original R i's alignment work 1ί-1 事 黎 Λ Then 1 can move the desired point of the test stand 5 到 to the exposure center of the mother pattern Pi item 4 1 〇 write 1 close to the '1st 在 in the projection optics% The reverse side of ϊ is also provided with the detection of 橾 \ 1 I on the shovel board 4. The 阃 m explosion of the off-axis (off a X-is) method 1 1 is: the alignment of the W method Moisture detector 2 3 〇 Contrast detector m 3 2 is a cover for light 1 1. The inspection mark is illuminated by the wide band of illumination of the glazing element, and the image recorded by J 1 · D is measured by CC. R camera and other two-dimensional photographic element photography, 〇J ί will be used for m signal m to m signal processing% system 150 0 and f pair The interval (baseline 黡) between the detection center of the inspection 1 1 device 2 Μ and the center of the pattern projection image (exposure 1 1 center) of the mask original dealer R i is the predetermined 1 1 basis on the reference mark member 1 2 The m record is obtained in advance, and is stored in the ΐ control system 9. The line is shown as _ in the X-direction edge on the lin plate 4 &gt; Formation Example II. 4 A, 2 4 Β 〇 After the masking operation of the original vendor R 1 1 is completed, the driver X is driven to make the reference mi of the λ _ 1: 1: 3 A, 1 Β of the tea plate 缋 2 4 A '2 4 柊 order the f in the detection field of ψ detector 2 3 in country 1 1 1 1 in order to define each standard I f Λ, 1; Ui is aligned with m, and 1 4 Λ , 1 4 B's 1 I for the alignment of the detector 2 3 The center of the detector m offsets the star 0 .¾ t will lie on the quasi mark 1 3 A t 1 3 B 1 1 -2 7 _ 1 1 1 1 This paper size applies to China National Standard (CNS) W regulations Dead (21〇χ2 ^? 公 殍) 449672 A7 B7 Consumer Cooperation Du Yin® of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the Invention (4) and alignment notes 24A, 24B have been inspected by the alignment tracker 23 The position of the test piece stand 5 at that time was measured with a laser jammer 8. These tide determination results will be supplied to the control system 9. The main control system 9 will use these tide results to find the center of the reference marks 1 3 A, 1 3 Β and the detection center of the alignment detector 23. When the coordinates of the test piece table 5 (XP) are aligned with the center of the alignment marks 24A, 2 4 Β and the detection center of the detector 2 3, the seat of the test piece table 5 (^ 1 \ ')卩 2). This completes the alignment operation of the substrate 4. As a result, the centers of the reference marks 1 3 A and 13 B are also aligned with the marks 2 4 A and 24B in the X-direction and Y-direction intervals (XPo-XPi, and YPo-YPl ·). Therefore, the XY stage 6 is driven to make the coordinates of the test piece stage 5 UF «, YF0) when the mask is aligned with the original mask manufacturer Ri, and the space (XP0-XPt, YPo-YPt) is moved by half, as in the fourth As shown in the figure, the center of the alignment marks 2 4 A and 2 4 B of the substrate 4 (the center of the substrate 4) can be made highly accurate and the center of the alignment marks 2 1 A and 2 1 B of the mask vendor Ri. (Exposure Center) becomes consistent. From this state, the XY stage G shown in FIG. 2 is driven to move the test piece stage 5 in the X direction and the Y direction, and the original mask Ri can be exposed at a desired position on the substrate 4 relative to its center. The reduced image Pli of the parent threshold M. That is, FIG. 4 shows a state in which the mother_case Pi of the i-th mask original vendor Ri is reduced and printed on the substrate 4 through the projection optical system 3. In the fourth image, the surface of the substrate 4 is aligned. The centers of the marks 2 4 A and 2 4 B are the centers, and the rectangular field area 25 surrounded by the sides parallel to the X-axis and the Y-axis is virtually set in the main control system 9. The size of the pattern area 25 is to reduce the size of the first circle_case 36 to 1 / «times. The pattern area 2 5 is also virtually set in its X direction and Y direction to be divided into α 偁. Regions S 1, S 2, S 3... SN (N = α 2). The position of the shooting area S i (i = 1 to N) is a reduction of the mother pattern 36 in FIG. 1 when it is assumed to be projected through the projection optical system 3 in FIG. 8 _ (Please read the notes on the back before filling in this search) This paper size is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) 449672 Α7 经 7 Printed by the Central Standards Bureau of the Ministry of Shanghai K Industry Consumer Cooperative Explanation () 1 1 The projection position of the small image PI i. 1 1 | If you want to use the X of the wood W embodiment as a mask 3 ^, the projection exposure device 1 1 is an ideal projection _ when the imaging control is performed, the main control system can be 1 x 1 m section and 2 m XY stage ( ϊ \ And in the 4th m, 1 makes the first ifi 1 |] block on the substrate 4 lift the center of the field 8 i ". The fel of 1 i is described by the alignment operation. Decrease the size of Pi by mm Ρ Ϊ i. The center of exposure is-consistent. Then / i 牛 牛牛 梓 制% 系 9 Make the exposure light item in the 2m-th illumination optical system 1 relight by Ijmm »Let it m _ The reduced image of the case Pi is exposed on the substrate 4 and a 1-up shot area Si 0 is located in the 4th m. The state case area 2 of the slab 4 has Ά1 I explained by the mother of m light. Reduced image m is shown as a solid line * Unexposed reduced 1 1 small images are shown as lines. 1 1 In this way, the mother pattern P 1 J of the N m-mode original R 2 RN of the 2 _ order and the reduced m of the PN may be sequentially exposed on a certain plate 4 丄 the corresponding up-scaling area S 1 JSN &gt; Reduce the size of the small picture of each mother garden case P 1 r ^ r PN and the mother pattern adjacent to 1 1 _ image __. And carry out _ »A commercial exposure precedes the substrate 4 1 Ι 1. η As a result, save a certain plate 4 1: Expose the mother pattern 3 G of the first image, reduce 1 1 line 1 / a times m HI 馋 2 0 Λ, and then develop the light mm of the apple plate 4 ί. T Ή is left with m__ waiting 1 to make the m plate 4 1 1 i: the m map m 2 Γ) is formed into the m.m pattern 2 7 9 as shown in Fig. 12 and I i Lrlrr T | X is used as a mask; {4 〇1 f When 1 Η substrate 4 is to be exposed, since the substrate 4 is fixed to 1 j test piece L »m, it is exchanged with the original mold R i of An: mm. 5 its The setting is possible. 1 1 is determined by the iF. I.e. the tide is fixed. Therefore f is in the exposure of the substrate 4 I light * a certain m. Note 3 A, 1 3 R and the position of the substrate 4 are false. No απ '1 1 I' 2 9-1 i 1 i This paper scale is applicable to the Chinese National Standard (CNS) Λ4 ^ 彳 M 210X2W Gong Zheng Bu 4 496 72 κ Λ7 B7 V. Description of the invention (w) When fisting and V 搀 cover the original ϋ i, q align the mask original fi i to a difficult _ Ji 1 U Η, it is not necessary to face a piece of beech original You must check the alignment of the plate for 4 h. Remember the position of 2 4 Λ, 2 〇 and buy „At this time, the original mask P i of each mask manufacturer. ; ί A,] 3 Β, and erbubu beech system ί 鸱 a certain plate platform of the birch system (1 for the XY platform β made of yellow birch, and maintain the correct position Conventionally, exposure is performed. Therefore, the accuracy of the joints in each case is certainly not high. Father, it is not necessary to form the alignment notes 2 4 A, 2 4 Β on the tea plate 4 丄. In this case, as stated, when the master pattern of the mask original K i is bonded to a certain plate 4 and reduced and transferred, the predetermined period on the original mask Bi of each mask {for example, to Ning Hua Ji 2 1 A, 2 Reduce the size of the transfer, and check the position of the latent image marked by the tide when the scale of the master mask of the mask is transferred. It is also possible to make a small image of the original master pattern adjacent to the mask. In addition, it is also possible to use the method of aligning the two notes 2 4 A, 2 4 Η, and L Bismuth to determine the position of the next image reduction area on the raspberry board 4 to be transferred. . The alignment marks 2 4 A and 2 4 fi are formed by using most of the original masks to transfer their patterns to the substrate 4 respectively, and then use a laser beam tracing device or an electron beam tracing device to form the rice. On the substrate 4. V, the mother of the original mask R i, which is the m-th piece (N sm of 3, m is an integer), is transferred to the substrate 4, because it already has {m-1) The reduced image of each mother case is transferred to a certain plate 4, so it can also be used to remember all or part of each of the i_i's 0_reconstructed pictures. Η-this paper size applies China National Standard (CNS) AMWM 210 × 297 male) (诮 Read the back of the precautions before filling out the book 1)-&quot; •-^, -1 · Printed by the Ministry of Consumers ’Central Standards Bureau, M Industrial Consumer Cooperative, 4 49 6 7 2 Λ7 H7 V. Description of the invention (&gt;?) Checked to obtain its position information, she carefully added the position of her saddle to average the logic, or the statistics to determine the first << Reduction of the mother pattern 俛 丨 7 When the position P ft of the raised area (the product stand 5) of the transferred plate 4 L is transferred, it may also correspond to, for example, (m-) mother cases. Reduce the portion of the image transferred from the command section of the fear area or part of the image area to the reduction of the IB area S area. The size of the area to be transferred , 陚 萌 are in After it is detected in the WW message of the part or part of the parked area, it is averaged or statistically processed to determine the reduction of the m-th pattern on the substrate 4 to be transferred. The position of the uplifting region 靑 η can also be selected from the uplifting region to be transferred from the reduced image of (a-案) Tonga _ before the averaging or statistical processing. The fn Η mother picture's edited small garden image is connected to the area to be transferred Φ 1 Nanbo 裰 plaque area, to detect the f Feijiji image of the selected shooting area. In order to obtain its location Method. Alas, the mark to be formed on the original wedge R i is not limited to 2 a, and the number may be 1 a or 3 a or more. In addition, it is not limited to 2 撩 to mark the moisture in the lifting area transferred by the reduced image of the (a-1) Ι mother pattern, and the number of steps may be t or 3 楠. At this time, the number of records to be detected in each tracking area can also be made different. In addition, you can also inspect or mark the rare part of the Betula Period formed on a mooring area transferred by the mother: the reduction of the national investigation, or the part of the mark. At this time, it is also possible to make the configuration (the number and the number of bits W 埤 埤 — 埤) of each inspection area 丄 different to be checked. In addition, the method of transferring a large number of patterns on the raspberry board j is, for example, to be published in Hei 5-1 9 7] 5 a and-; n-

本紙張尺度適用中國國家標準（CNS ) Λ4规枯（2IOx2y7';MM -----„---^---焚------.訂—,-----嫁， (允先閱績背而之注念事項洱填寫本负) 443672 Λ7 !Ϊ7 經&quot;_部中央標準局貝工消费合作社印^This paper size applies the Chinese National Standard (CNS) Λ4 gauge (2IOx2y7 '; MM ----- „--- ^ --- burning ------. Order —, ----- marry, ( Allow me to read the memorandum, and fill in the burden) 443672 Λ7! Ϊ7 Warned &quot; _ Printed by the Central Standards Bureau, Shellfish Consumer Cooperatives ^

五、發明説明 (· ) I I 其 對 應 的 美 國 專 利 第 5 2 9P 7 f 1號中有所公佈， 在木件國際 I I 利 申 m 所 指 定 的 指 定 m 或 所 m 擇 的 選 擇 國 之 國 内 法 I I 令 所 容 許 之 下 , 援 用 上 公 報 及 美 國 專 利 的 公 佈 内 容 * ifi i 先 I 作 Ά 本 文 記 鋪 之 一 部 分 〇 閱 讀 I Ϋ 第 1 圖 的 m. m 案 2 7 中 ， 例 如 包 含 密 集 阈 案 和 孤 背 而 I I 之 I A - 、人 阔 時 , 在 掩 模 版 R 1 〜 R.N少 中 1 -W η 在 I Η 掩 模 棹 販 注 念 i 事 R a ί W. 形 成 密 隼 阚 窠 * 而 存 另 1 Η 掩 槙 脖 m R h上 只 形 成 項 再 I 顧 &lt;f. m 寧 之 情 m rt 眈 時 1 密 m 國 案 和 孤 vC 圖 華 的 最 诖 照 填 寫 I 本 明 條 件 和 成 m 條 件 箅 的 曝 光 條 件 有 所 不 同 &gt; 因 而 對 毎 __. Τι I I 埯 m 版 R 1 的 曝 光 也 口f 依 m 其 母 園 案 Pi 的 情 形 » 將 其 I I 曝 光 條 件 即 m 明 光 學 統 1 内 的 光 圈 的 形 狀 或 大 小 &gt; I I J4. H'， 即 光 學 統 1 内 的 對 掎 模 原 版 R. i 圖 案 商 的 I i7 (F 0 U r i e r )ί 專換而上之曝光光線的強度分佈、 相干傑數 I (r r m ) N 及 投 影 光 學 % 統 3 的 數 俏 孔 徑 等 予 以 最 合 適 化 f I 者 此 時 &gt; 如 母 國 案 Pi 是 密 圖 案 (周期性圖案）時 採 I I 用 等 形 昭 ^ 'Is! 明 法 (fn 將 一. m 光 源 的 形 狀 構 成 為 瑗 形 光 帶狀、 I I 限 制 在 從 照 明 光 學 % 統 的 光 軸 離 開 大 致 等 距 離 的 多 數 線 m 部 Μ 11 可 〇 又 * 依 照 掩 模 m 案 變 更 一 維 光 源 的 形 狀 I | 大 小 m 奘 liM η 是 在 於 例 如 待 開 平 5 - 3 η 4 0 7 6 狨 公 報 及 I I 其 對 晦 的 美 國 專 利 5 ：ΐ η 4 4號中有所公佈， 在本件國際專 I | 利 φ 所 指 定 的 指 定 國 、 或 所 m 擇 的 m m 國 之 國 内 法 Λ^. V I I 所 m 許 之 ， 掙 用 1; 述 公 報 及 美 國 專 利 的 公 佈 内 容 9 作 I t 為 本 之 -一- 部 分 〇 乂 \ 要 使 其 曝 光 條 件 為 B3 取 合 適 化 I I 而 茌 投 影 光 學 統 3 的 光 障 商 附 近 設 置 裝 卸 白 如 的 9 I I -3 2 - I I I I 本紙張尺度適用中國國家標車（CNS ) Λ4规梠（2】〇乂2们公兑） 經漭部中央標準局月工消费合作社印製 A7 H7 五、發明説明（y ) 例如可在以光軸為中心的圓形匾域上遮仵曝光光線之光 學滹光器（所謂光矂滹光器），或邰用坷使投影光學条統3 的圖像而和華板4的表商之間，在相對的所定範圍内産 斗#動之所謂累准焦點法ffUx:柔件法 &gt; 亦可β .又具有 光睹滹光器裝卸機稱的曝光奘靑是在於例如恃開平 8 - 81 5 7躺公報》其對應的_國專利第Ei fi 7 7 7 5 7號中有所 公佈，而採闬累维焦點法的曝光裝置是在於例如恃開平 m 3 η 5號公報及其對藤的美國專利第5 4 8 n u號中有所 公佈，在木件_際專利申謓所指定的指定國，或所選擇 的壤擇國之阈内法令所容許之下，锾用上述公報及美國 專利的公佈内容，作為本文記載之一部分。 义' 也_ρί將母捽模作為移相掩模，舱將照明光學糸统 的ίΤ俏例如設為（Κ 1〜II · 4稈度，而採闬上述累進焦點法 者， V ,光罩也不限定於只是由辂等遮光層所構成之掩模 ，而空間Ρ頻帮、谷公司-趾倍送型）、邊緣強調型 ,w m淡點丨_犁箬的柊相掩模均可。t其在空間調頻_ 戎铮綠強調型中，是要在掩樽某板上爾耰遮光阃案，以 形成移相器阔案，因而要堆備例如其移柑器用的母掩模 ，以作為另榑用途〇 接转説明使用工作掩模3 4的投影曝光裝置中，其投影 圃像的成像恃件不在於理想狀態時的情形。假定使用工 作撺模3 4的如第1 2圖所示投影曝光裝置是總括曝光型時 .其投影光學条統4 2的成馋特件中，可能會有某些程度 -3 3 - 本紙張尺度適用中國國家標牟（CNS ) Λ4規格（21〇Χ2&lt;Π公兑） --------^---------，訂I,-----線 (誚先閲讀背而之注念事項再填寫本1) 4^6 72 Λ7 Η 7 經瀠部中央標準局負工消费合作社印聚 五、發明説明 ( ) 1 I 的 非 瞭 轉 對 稱 像 差 ♦ 或 失 宾 等 的殘 留 之情 形 〇 在 此 是假 1 1 定 投 ψί 光 學 % 練 4 ? 的 成 m 特 件 中， 殘 留箸 如 箆 圖 中， 1 1 虛 所 示 格 子 狀 夕 理 想 圖 m 2 8會 變 成實 線 所 示 的 m m -—^ ih 1 先 1 (或膀鼓犁等） 影 圖 2 9之失 者η 閲 請 1 存 第 F_树圖Ψ , 設從椏影光學条統的光軸A X 】到投影國 ΐϊ· 而 i 之 1 楝 Μ [. 的 點 1 9 跑離為r 從投影光學条統&amp; β光軸ΑΧ 1 兔: 1 事 到 所 對 解 理 m 〇·、 11 像 2 8 上 的 點 28 a之距離為r 〇 &gt; m 在 距離 項 再 1 r 的 ft i)( r ) α7 由 下 式 表 示 4 Ϋ, 1 本 Π( r )- i r -r 0 )/ r ⑴ 頁 、«_^ 1 I m 而 在 距 離 V 的 投 影 _ 像 2 9對於 理 想圖 像 2 8的 位 移量 1 1 大 致 成 為 r D ί Γ ) ο 1 1 在 情 形 時 木 例 疋 如 第 4 圖所 示 的， 要 將 第 i 片掩 1 ΐτ 樽 原 版 R i 的 m m 窠 Pi 之 縮 小 圖 像投 影 於基 板 4 上 時 ,預 I 先 將 曝 光 位 黃 從 木 來 的 柏 攝 區 域S i向 X方 向 及 Y 方 向移 f 1 勒 » 以 銷 其 舆 的 份 1 1 I 第 5(b) _是某板4 上的拍攝區域S 1 , S 2 ,. * * ,s Ν的排列倩 1 i 線 形 在 1% 第 ϋ知）圖中， 假定是要在本來的拍攝區域S 5上， 投 m 其 對 應 的 母 阖 % 之 縮 小 圖 像Ρΐ 5者。此畤， 假設從拍 1 攝 區 域 S F，的 中 心 到 所 要 使 用 的 投影 光 學条 統 之 預 定 光軸 I 1 A X 1 之 跑 離 為 r * 而 由 該 投 影 光學 % 統以 1 / β 倍 縮 小投影 1 I 於 攝 域 S 5時 Λ 在 投 影 位 置的 半 徑方 向 之 位 移 罱是 i I 由 ⑴ 式 成 為 (Γ / β ) 1)( r / β )〇 又，如預先使编小阖像P15 1 1 的 曝 光 位 置 對 於 拍 攝 m 域 S 5位 移5 (Γ)時， 其投影光學条 1 統 所 産 生 的 位 移 量 iStr 曰 成 為 δ {ΐ) / β 〇 因此 1 要 用 此 位移 1 1 I： 以 柢 消 其 失 宾 時 的 條 件 如 下 1 I -3 4 &quot; 1 1 本紙張尺度適用中國國家標準（CNS ) AWWM 210x29以# ) i' 1 h； 7 Ο 〆、t ‘ 、 Λ 7 ίΓ 經消部中央標準局另工消费合作社印聚 五、發明説明 、&gt;?h ) 1 1 δ (Γ ) / β - -f r / β )i) (Γ / β ) ⑵ 1 1 I 由 牝 &amp;) :rt 得 位 稃 鼠 δ (r )為 1 I S (r ) __ -Γ * Μ Γ / β ) (3) Λ 1 I 尤 1 眈 式 中 » η ( r/ β )如為TF.俏畤其負符號是表示將縮小圖 ! 背 ! 悚 Ρ I 5向光軸Λ X力向位移者。 冏樣的， 例如在抽攝區域S7 而 之 1 I 中 Ϊ th 先 將 所 對 瞧 的 编 小 m 像 Pi 7的曝光位置位移於可瞞 注 1 1 事 (3) 式 之 位 夏 * 在 其 他 的 拍 攝 區 域 也 同 樣先將 縮 小 圖 像 項 再 1 I 位 移 乂 1 在 光 軸 Λ X 1 上 的 拍 攝 m 域 S 1 3中，其编小圖像 填 ?'5 1 本 P ] 不 必 Ψ 其 位 置 0 由 此 第 5轫圖的矢宾會被抵消， Ά 、^-· 1 I 而 of m 得 想 j爾 m ϋ 8的 曝 光 〇 1 1 I 由 第 5粉闺可知4 在投影_像2 9中， 位於從光軸A X 1 1 1 的 離 為 Γ 部 分 域 其 倍 敦 ft 有 △ 卢（r )的爭化， 而 J η η % 也 商 生 m 妙 的 非 旋 轉 對 稱 的 變 形 〇 因此， 在 第 4 圖 1 的 投 影 曝 光 裝 菁 之 投 影 光 學 統 3 中 » 設置例 如 驅 動 投 1 1 影 光 學 % 統 ；ί Λ 的 所 定 透 鏡 元 件 等 的 修 ΪΗ機構 * 以 使 可 1 1 以 將 投 影 倍 數 或 失 真 在 所 定 範 圍 加 以 控 制者較 為 理 想 〇 1 1 線 r 而 例 如 在 第 5⑹阃的抽攝區域S 5上曝光编小圖像P I 5時 f 使 m 第 4 _ 的 投 影 曝 光 裝 詈 t 不 揮 使 曝 光位移 δ (Γ )， 而 1 I η 先 修 iF. 投 影 光 學 統 的 倍 數 以 柢 消 所對應 的 倍 數 誤 1 ! 差 Λ β (r ! β ) Ιπ| 時 ' 也 先 條 (F. 役 影 光 學条統 a 的 失 宾 1 1 1 件 Ι'Λ 盡 m 的 柢 消 所 對 應 的 m 部 ψ. 形 0 由此， 可 將 第 5 © 1 m 的 7 存 m 高 精 庠 的 柢 消 0 1 1 桉 m ' 假 m 第 12 圖 的 影 曝 光 裝 置 是 例如為 步 漼 重 複 1 1 方 式 的 掃 描 曝 光 而 其 投 影 圖 像 的 特 性是如 第 f;⑶圖所 1 I 5 - 1 1 1 1 本紙張尺度適用中國國家標準{ CNS ) Λ4現枱（210X2W*兌） 4496 72 A7 Η&quot; 五、發明説明（χ) 示的，虛線的矩形部分是理想圖像3 η,實線的平行四遴 形狀部分是其投影_像：u，而殘留W所謂甭斜誤差之情 形加以説明。 在第&lt;i⑸圖中，投影國像3 1的中心雖然和理想圖像3 0的 Φ心37柙同，袒桉彰_搀：u是相對於珲想圖像3 0 ,對掃 描方向的_之Y軸向啊胳針方向歪斜角度&lt; Q此乃在於 撺槔與被曝光莱板之間的掃描方向有所偏移時所産生的 ,掃描瞟光方式恃有之誤差（汍可以説明非旋轉對稱像差 之一例），而例如投影阔侏3 1的周園部位的部分圖像3 1 a 是從理想的部分I圃像；ί Π a向-X方向横向偏移（iT X 1 ,目以 角度4歪斜成為平行四谤形狀。 這猙情形時，在木宵施例中，如第4圖的，將掩模原 版m〜K N的母阃案之縮小圖像依序投影於基板4上之投 影曝光裝置是使用以Y方向作為其掃描方向的步進重複 方式之投影曝光裝置者，而在於要將例如對應於第6料圆 的部柺圖像；ί n a之掩模痗版R 2 1的母圃案縮小圖像P I 2 1曝 光時，倏汜其成像特件，以柢消其横向偏移最J X 1及角 庚必之誤差η 第〇⑹國虛線的排列3 2是某板4上的柏攝區域在設計丄 之排列，在詼第〇⑹阖中.假定是要在對應於第fi㈤圖的 部分！爾悚，ΉΙ a的在設計上之泊捣匾域S 2 1上，持影母園案 的縮小圖俛（M 2 1者n在此倩形時，如將該拍攝區域S 2 1由 L钵投影光學糸統以1 / β倍编小投影時，其横向偏移量 是d )( 1 ,因而預先使縮小圖像Ρ ί 2 1的曝光裝置相對於拍 -3 ft - 本紙乐尺度適用中國國家標準（CNS ) Λ4規枯（210X^7^^ ) ϋ -I- .1 - I . - I I I - - ί. ΐ I &gt; τ» -111 : - ---, 1 - Λ τβ 句. (計先閱讀背而之注意事項呼填巧本頁) 經漪部中央標孳局負工消费合作社印^ 4 449672 經潢部中央標苹局爲工消费合作社印聚 Λ/ Β7 五、發明説明（w) 攝匾域S 2丨位移X 2畤，由其投影光學条統所産生的位 柊臂舍成為-X 2 / Θ (負符號是由於反轉役影U因此， 要闲此位移崑以抵銷搽向位移1占X 1時，其條件如下： -SI ϊ!β 二-δ \ \ (4) 由丨比⑷式，可得揉份移鼠ί )( 2會成為yS · ίϊ X 1 〇 V，在本莕施例中，要_光编小_像Ρ ί. 2 1之際，其掃 描方向作為Υ方向、而將掩模鹿版與基板4的掃描方向 錯開，.以使線小_悚Ρ Τ 2丨從Υ軸向反時針方向歪斜角度 必„同揉在其他泊攝匾域ft使所對喔的縮小闺像之曝光 位背向横向位移，Η從Y軸向反時針方向歪斜角度必。 由此，第G⑻_的歪斜誤差在實質上被抵消，可曝光理想 圖像；ΐ η „ 乂，上述可修市倍數誤差或圖像變形等的掃描 曝光裝菁是在例如特開平fi - 3〗0 3 9 9號公報、待開平 7 - 5 7 9 9丨號公報及其對應的_國專利申謓0 8 / 2 ;U 3 1 9 (申請 闩期：1994年4月2ft R)中有所公佈，在木件國際專利申 满所指定的指定國、或所嬅擇的選擇國之國内法令所容 許之下，援用上钱公報及美國專利申謓的公佈内容，作 為本义記絲之一部分η 赏 112— 以下，黎照圃而説明本發明的筲施例2 „ 第7國是本發明宵施例2的光罩製造工稈圖。在第7 圖中，作為Μ诰對象的光單是和第1圖同樣，於實際上 Ρ浩半導體裝置時所使用的工作掩模3 4。本實施例2與 實施例1不同之點，是製作Η邰（Μ是2以上的整數）的作 -3 7 - 本紙張尺度適用中國國家標隼&lt; CNS } A4iJJJS ( 210Χ2&lt;^:ΜΜ (&quot;先閱讀背而之注意事項再填寫本s ) Λ --° Λ7 H? 443672 五'發明説明) 為母褅榉之掩榉殴版，而利用這®多數紐的掩模原版R i , « i…·以料谁T作撺樺it 4者。 在第7 _中，和第1園同搽的，首先轉雷路圖案放 女/?蓓，斛成其成iF交的邊之寛度為沒.dX， β - dY i：j ,由矩形匾诚所構成之庳版圖築2 7，其次，將該葭版_ 案2?放大or倍，製成其ίΗ交的瘵之寬度為tf · /? · dX , «厶· dy的，由矩形匾域所構成之母圖案3 ο,接箸將 該母阖柒3 fi分割，製成ct X cr個母圖案P 1，P 2 , P 3 , . . . P H， (Ν= α 2丨，將请哄®圖案ΡίΠ二1〜f〇各傾以等倍的轉 屮铲第〗紐N Μ择掩梅之掩楫原販K i上。有關掩模原版 R- i之事乃和第〗_所示者相同。 其-欠，再麼侍用由其母ϋ!案Mi所分割的母阖案p 1 , p 2 , ...P N之描芾資料，將該母圖案Pi各個以箬倍的轉印於第 2邰N片a撺桿之掩模原版（H上n第2鋇褅模葭販（J 1〜Q Μ 上的母_菜ρ 1〜μ ν ,為了和第1紐有所匾別，在以下稱 之為母_案.U〜A Ν β 如比，在本實施例中，各母圃案Ρί及Ai的各膣描畫資 料之數t是卜b棹版_案2 7的搣少到1 / α 2程度，艮，最 小線莬度為α倍，因而可將各母_案在短時間内，精密 的完成描害η又，製成掩榑厣版R,]〜R Ν , Q〗〜Q Ν後，可 將拉反複掙用，以製诰工作掩楫3 4 ,因而，製造掩模原 版m〜li. L in〜《 Ν所需的時間，祯不是很大的負換。 ΗΠ ,將N Η的第？ Μ掩樺原版R i的母圃案P i之1 / α倍 縮小圖像Ρ丨i ( ΐ =]〜Ν )分別一而併圃一商轉印於基板4 ，. -8 - 本紙張尺度適用中國國家標隼（CNS ) Λ心)ί枯（210x2们公；if:) ....... -- - - - - - - - - I^- .^1 ^^^1 ^—^1 ^—^1 -! —-til 'WIJ- - I —^1 —^1. (#&quot;閲逆背而之注意事項再填粍本R ) 經&quot;-部中夾標挲局另工消費合作社印聚 S 4 :4 經滅部中央標卑局只工消费合作社印奴 6 7 2 a7 H7 五、發明説明（W ) l·.後，將Μ的第2甜掩樽原販tn的母圖案A j之1 / α倍 縮小閑浼U i ( i = 1〜Ν )分别一面併阚一而軍#轉印於基板 4丄，以製成工作掩模3 4 在太菁铯例2 Φ ,#製造：Γ作掩模3 4時，也使用第2 阔的縮小柃影曝光裝賢，在其掎模台2上放置第1組的 _ i Η ί ΐ 〜Η之摘模原版R i „又，在掩模庫1 (5内，是 存於7,方向依序排列的2，N艏支承板1 7上，放置第1組 撺槔吩版R1〜丨ΐ N ,及第2翊掩模厣版（H〜Q N ,而由主控 制糸统9捽制其動作的掩樽裝科機丨9，會在掩模庫]R中 ff:S所欲夸甭板1 7與槠模台2之間進行所欲掩模原版R 1〜R Ν ,q 1〜Q N之交接。在這稗構成時，牛捽制糸統fl的記憶裝 菁U中，赏然也儲存转撺模照版（i 1〜8 N , (H〜Q N的相互位 胥陴條和對准音訊。 本宵旃例中.對於某板4的曝光時是以步進重複方式 ，將第1紐掩模原版R 1〜R. N的縮小|圈像曝光於基板4的 各枘攝匾域，接舞，將第2組掩模原販Q 1〜Q N的縮小圖 徇爭替曝光於苺板4上。又當然ft可使用如步進掃描方 式的掃描曝光犁之編小投影曝光裝置以替代總括曝光犁 若。？.第2阖β第3圖中的對準機構是不僅用在摘模 原版R〗〜R Μ ,而仇用在掩模原版Q 1〜Q Ν的縮小圃像間的 ; 高賴哮之併丨颖（接合）。在於對準時是和掩模嗦版R時同 樣，使闬形成在掩模原版Q i的十字型之2饀對準榑記。 如牝將筚1組ί彳個掩模闱販R丨〜N的母_案P 1〜P N之 縮小圖像依序曝光於某板4上所對應的抬攝區域S 1〜S Ν -3 3 - 本紙張尺度適用中國國家標準（CNS &gt; Λ4规枋（210X2W公夂） _ _ _ _ _ n In__JJ:__I— tn t^i ^1- T _ Γ— _ fn Ju _ . 4i A (对先閱讀背而之注盘事項再填本N ) Λ7 Η7 五、發明説明（w) ，就可如第fl㈤阖所示的，使各母圖案P 1〜P N (第8⑶圖中 k 2 5 )的编小H像P丨1〜Ρ ΐ N各辋和柑鄰接母_案之縮小 圖像一面併圖，一而曝光。在第8钧圖中，缩小圖像Ρ I 1 〜Ν所接含的_像是将第7 _的母鬭案3 fi縮小1 / (?倍後V. Description of the Invention (·) II It is published in its corresponding US Patent No. 5 2P 7 f 1 in the domestic law of the designated m or the selected country designated by Lichen m To the extent permitted by Order II, refer to the published contents of the Gazette and the U.S. Patent * ifi i first I as a part of this article 〇 Read I Ϋ Figure 1 m. M case 2 7, such as the dense threshold case and The IA of solitary and II-When people are wide, 1 -W η in mask R 1 ~ RN is less η In I Η mask clerk remembers i matter R a ί W. Form secret key * and save 1 Η 槙 项 h 形成 m m R h only forms a term and then I Gu &lt; f. M Ning Zhiqing m rt 眈 1 1 dense m State case and solitary vC Tuhua's best picture fill in the I conditions and conditions The exposure conditions of 箅 are different &gt; _. The exposure of the Ti II 埯 m version R 1 is also dependent on the situation of its mother's case Pi »Let its II exposure conditions be the shape or size of the aperture in the optical system 1 &gt; II J4. H ', That is, I i7 (F 0 U rier) of the original R. i pattern quotient of the opposing model in optical system 1 is replaced by the intensity distribution of the exposure light, the coherent number I (rrm) N, and the projection optics% system 3 If the number of apertures is optimal, then I will be used at this time. If the home country Pi is a dense pattern (periodic pattern), use the isomorphic method. ^ 'Is! Ming method (fn will be a. M light source Shaped as a 瑗 -shaped light strip, II is limited to the majority of lines m 11 which are approximately equidistant from the optical axis of the illumination optics system. M 11 can be changed according to the mask m. I | size m奘 liM η is, for example, to be Kaiping 5-3 η 4 0 7 6公布 η 4 No. 4 has been published. In this international patent I | Li φ, the designated country, or the selected mm country ’s domestic law Λ ^. VII allows, earns 1; And U.S. Patent Publication Contents 9 I t is part of this-part-0. \ To make its exposure conditions to B3, take the appropriate II, and set the projection optical system 3 near the light barriers of the installation II such as 9 II- 3 2-IIII This paper size applies to China National Standard Vehicle (CNS) Λ4 Regulations (2) 〇2 2 official exchange) A7 H7 printed by the Ministry of Standards, Bureau of Standards and Consumers ’Cooperatives V. Invention Description (y) For example An optical calender (a so-called optical calender) that shields the exposure light on a circular plaque field centered on the optical axis, or the image of the optical strip 3 can be projected with the Among the dealers, the so-called cumulative quasi-focus method ffUx: flexible method &gt; can also be produced within the relative predetermined range. It also has the exposure of the lighter loader, such as: Kaiping 8 -81 5 7 Lay Bulletin "and its corresponding _ Chinese Patent No. Ei fi 7 7 7 5 7 is published, and the exposure device adopting the dimensional focus method is, for example, Kai Kaiping m 3 η No. 5 Bulletin and its U.S. Patent No. 5 4 8 nu to rattan has published that the above-mentioned bulletin is permitted by the designated country designated by the woodwork / international patent application or the threshold law of the selected country of choice. And U.S. patent publications as part of this document. Yiyi also uses the mother mold as a phase-shifting mask, and the module sets the illumination optical system to be (K 1 ~ II · 4 degrees, for example, and adopts the progressive focus method, V, photomask It is not limited to a mask made of a light-shielding layer such as 辂, but a space-frequency mask, a valley company-toe double-feed type), an edge-emphasized type, and a wm-slight point 丨 _ 箬 箬 箬 phase mask. In the spatial frequency modulation _ Rong Zhuan green emphasis type, it is necessary to carry out a light-shielding project on a certain board to form a phase shifter. Therefore, for example, a master mask for its orange shifter must be stocked. As another application, it is explained that the projection exposure apparatus using the working mask 34 does not have an imaging device for projecting a garden image in an ideal state. Assuming that the projection exposure device using the working mold 3 4 as shown in Fig. 12 is a collective exposure type, the projection optical system 4 2 may have a certain degree among the special components. 3 3-This paper Standards are applicable to China National Standards (CNS) Λ4 specifications (21〇 × 2 &lt; Π exchange) -------- ^ ---------, order I, ----- line (诮Read the memorabilia first and then fill in this book 1) 4 ^ 6 72 Λ7 Η 7 Printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives of the Ministry of Commerce 5. Description of the invention () 1 I asymmetrical asymmetrical aberration In the case of the residual of Bin et al. In this case, in the special feature of false 1 1 fixed cast ψ optical% 4 4, the residual is as shown in the figure, and the ideal grid m 2 8 shown in virtual form will become real. The mm -— ^ ih 1 shown in the line 1 (or the drum plough, etc.) shadow 2 2 of the lost η please read 1 to save the F_tree image Ψ, and set the optical axis AX from the optical system of the shadow】 To the projection country ΐϊ · while i 1 楝 Μ [. Of the point 1 9 runs away from r from the projection optics & am p; β optical axis AX 1 rabbit: 1 the distance to the cleavage m 〇 ·, 11 like the point 28 a on 2 8 is r 〇 &gt; m ft i in the distance term 1 r (r) α7 is expressed by the following formula: 4 Ϋ, 1 book Π (r)-ir -r 0) / r ⑴ page, «_ ^ 1 I m and the projection at a distance V _ image 2 9 displacement of the ideal image 2 8 1 1 roughly becomes r D Γ) ο 1 1 In the case, as shown in Fig. 4, the i-th sheet is masked by 1 1τ The reduced image of mm mmPi of the original R i is projected on the substrate 4 In the above, pre-I first shifted the exposure level from the wood-like cypress area S i to the X direction and Y direction by f 1 | »to cancel its share 1 1 I Section 5 (b) _ is a shot on a board 4 The arrangement of the regions S 1, S 2,. * *, SN is linear in 1% (known in the figure). It is assumed that in the original shooting region S 5, m is casted to the corresponding percentage Zoom out Ρΐ 5 persons. Here, it is assumed that the deviation from the center of the shooting area SF1 to the predetermined optical axis I 1 AX 1 of the projection optical system to be used is r *, and the projection optical% system reduces the projection 1 by 1 / β. The displacement I of Λ in the radial direction of the projection position at the photographic field S 5 is i I is (Γ / β) 1) (r / β) from ⑴. Also, if the small image P15 1 1 is edited in advance, When the exposure position is shifted by 5 (Γ) from the m-field S 5, the displacement iStr produced by the projection optical strip system is δ {ΐ) / β 〇 Therefore, 1 is used to shift 1 1 I: The conditions at the time of absence are as follows: 1 I -3 4 &quot; 1 1 This paper size applies to the Chinese National Standard (CNS) AWWM 210x29 to #) i '1 h; 7 〇 〆, t', Λ 7 ίΓ Central Standard of the Ministry of Economic Affairs Printed by the Consumer Goods Cooperative of the Bureau of the People ’s Republic of China 5. Description of the invention, &gt;? H) 1 1 δ (Γ) / β--fr / β) i) (Γ / β) ⑵ 1 1 I is obtained from 牝 &amp;): rt Mole δ (r) is 1 IS (r) __ -Γ * Μ Γ / β) (3) Λ 1 I especially 1 In the formula »η (r / β) is TF. Its negative sign indicates that the figure will be reduced Back! Thriller I 5 moves towards the optical axis Λ X toward the displacementr. For example, in the sampling area S7 and 1 I, th first shifts the exposure position of the facing small m like Pi 7 to the position where the note 1 1 can be concealed. (3) Xia * In other In the shooting area, the reduced image item is also first shifted by 1 I. 乂 1 In the shooting m field S 1 3 on the optical axis Λ X 1, its small image is filled in. '5 1 This P] It is not necessary to Ψ its position 0 From this, the vector in the 5th figure will be offset, Ά, ^-· 1 I, and of m has to be the exposure of jjm ϋ 8 〇 1 1 I can be seen from the 5th fan girl 4 is projecting_like 2 9 In the part of the distance from the optical axis AX 1 1 1 to Γ, the double ft has a contention of △ Lu (r), and J η η% is also a non-rotationally symmetric deformation. Therefore, in Fig. 4 Projection Exposure System of Projection Exposure System 3 in Figure 1 »Settings such as driving 1 1 projection optics% system; Λ's predetermined lens elements, etc. The repair mechanism * is ideal for those who can control the projection magnification or distortion within a predetermined range. 1 1 Line r, for example, when the small image PI 5 is exposed on the 5th extraction area S 5 f makes the projection exposure device of m 4 _t not change the exposure displacement δ (Γ), and 1 I η is fixed by iF first. The multiple of the projection optical system is cancelled by the corresponding multiple 1! Difference Λ β (r ! β) Ιπ | '' is also the first (F. Miscellaneous object of the optical film optical system a 1 1 1 pieces Ι′Λ The m part corresponding to the elimination of m ψ. Shape 0 Therefore, the 5th © 1 m of 7 memory m high-resolution cancellation 0 1 1 Eucalyptus m 'false m The image exposure device of FIG. 12 is, for example, repeating the scanning exposure of the 1 1 method for steps, and the characteristics of the projected image are as follows f; ⑶ Figure 1 I 5-1 1 1 1 This paper size applies Chinese national standard {CNS) Λ4 current station (210X2W * /) 4496 72 A7 Η &quot; V. Description of the invention (χ), dotted line The rectangular part of is the ideal image 3 η, the parallel quadrilateral shape of the solid line is its projection image: u, and the residual W so-called oblique error will be explained. In the &lt; i⑸ diagram, although the center of the projected national image 3 1 is the same as the Φ center 37 of the ideal image 3 0, the following is true: u is relative to the imagined image 3 0 in the scanning direction. _ Of the Y axis, the skew angle of the needle direction &lt; Q This is due to the deviation of the scanning direction between the 撺 槔 and the exposed plate, and there are some errors in the scanning mode (汍 can explain An example of non-rotationally symmetric aberrations), and for example, the partial image 3 1 a of the surrounding area of the projected broad and thick 3 1 is projected from the ideal partial image I; Π a is laterally shifted in the -X direction (iT X 1 In this case, in the case of Muxiao, as shown in FIG. 4, the reduced image of the original mask of the mask original m ~ KN is sequentially projected on the substrate. The projection exposure device on 4 is a projection exposure device that uses the step-and-repeat method with the Y direction as its scanning direction, but is to make, for example, the image of the part corresponding to the sixth material circle; When the scaled-down image PI 2 1 of the mother's case of R 2 1 is exposed, its imaging features are eliminated to eliminate the errors of JX 1 and Jiao Geng's lateral offset. The difference η is the arrangement of the dotted line 32 of the country 0. It is the arrangement of the cypress area on a board 4 in the design ，, in ⑹ 阖 0 诙. It is assumed to be in the part corresponding to the fi㈤th picture! On the design slab sphere S 2 1 of a, a miniature figure of the case of the mother-in-law case (M 2 1 when n is in this shape, if the shooting area S 2 1 is projected by L bowl optical 糸When the small projection is edited at 1 / β times, the lateral offset is d) (1, so the exposure device of the reduced image P ί 2 1 is set relative to -3 ft in advance-this paper music scale applies Chinese national standards ( CNS) Λ4 gauge (210X ^ 7 ^^) ϋ -I- .1-I.-III--ί. Ϊ́ I &gt; τ »-111:----, 1-Λ τβ sentence. (Count first Read the note on the back, and fill in this page) Printed by the Central Bureau of Standards of the Ministry of Economic Affairs and Labor Cooperatives ^ 4 449672 Printed by the Central Bureau of Standards of the Ministry of Economics and Industry for the Industrial and Consumer Cooperatives Λ / Β7 V. Description of the invention (w) The plaque field S 2 丨 is shifted by X 2 畤, and the position arm produced by its projection optical system becomes -X 2 / Θ (the negative sign is due to the reversal of the shadow U. Therefore, this shift must be used to offset When the heading displacement 1 accounts for X 1, The pieces are as follows: -SI ϊ! Β 2 -δ \ \ (4) From the formula 丨, we can get a portion of the mouse) (2 will become yS · X 1 〇V, in this embodiment, it is necessary to _ 光 编 小 _ 像 Ρ ί. On the occasion of 21, the scanning direction is taken as the Υ direction, and the deer mask and the scanning direction of the substrate 4 are staggered, so that the line small _ΡΡ Τ 2 丨 from the Υ axis The skew angle in the counterclockwise direction must be the same as that in the other photographic field ft, so that the exposure position of the narrowed-down portrait of the girl is shifted backwards, and the skew angle in the counterclockwise direction from the Y axis must be. As a result, the skew error of the G⑻_ is substantially canceled, and an ideal image can be exposed; η η „乂, the above-mentioned scan exposure equipment such as the repairable multiple error or image distortion is described in, for example, JP-A Fi-3 〖0 3 9 9 、 Pending Kaiping 7-5 7 9 9 丨 and its corresponding _ national patent application 0 8/2; U 3 1 9 (application latch period: April 1994 2ft R) It has been announced that, as permitted by the domestic laws and regulations of the designated country or the selected country of choice of the international patent application for wood, the contents of the publication of the Shanghai Money Gazette and the US patent application are used as the original meaning. Part η reward 112— Hereinafter, Li Zhaopu will explain the second embodiment of the present invention. The seventh country is a photomask manufacturing process diagram of the second embodiment of the present invention. In FIG. 7, the light sheet as the target of the MEMS is the same as that in FIG. 1, and the working mask 34 is used in the actual Pho semiconductor device. The difference between this embodiment 2 and embodiment 1 is the production of Η 邰 (M is an integer greater than 2)-3 7-This paper size is applicable to the Chinese national standard 隼 CNS} A4iJJJS (210 × 2 &lt; ^: ΜΜ ( &quot; Read the back of the note before filling in this s) Λ-° Λ7 H? 443672 Five 'Invention Note) For the beech mask of mother beech, and use this mask original version R i of most of the buttons, «I ... · who is expected to make it 4 people. In the 7th _, the same as the 1st garden, first turn the pattern of the thunder road and put the girl /? Bei, the degree of the edge of the iF intersecting is not .dX, β-dY i: j, by the rectangle The plate layout composed of plaques is 2 7. Secondly, the frame _ case 2 is enlarged or multiplied to make the width of the frame t is tf · /? · DX, «厶 · dy, and the rectangle is The mother pattern 3 ο formed by the plaque field is then divided into 3 fi and the mother pattern 3 fi is formed into ct X cr mother patterns P 1, P 2, P 3,... PH, (N = α 2 丨, Will be pleased ® pattern P 1 2 ~ f 0 each turn to turn the shovel No. N N M choose the cover of the original vendor K i. Regarding the mask original R- i is the first _ The same is shown. It is-owed, then use the description data of the mother project p 1, p 2, ... PN divided by its mother! Times the original mask of the second 邰 N sheet a （rod (the second barium die on H n (the mother_dish ρ 1 ~ μ ν on J 1 ~ Q Μ, for the first There is a plaque. In the following, it is referred to as the mother case. U ~ A Ν β For example, in this embodiment, the number t of the drawing data of each mother case Pl and Ai is b 棹 Version_ Case 2 7 is less than 1 / α 2. That is, the minimum linear degree is α times. Therefore, each parent case can be accurately described in a short time, and η can be masked.榑 厣 版 R,] ~ R Ν, Q〗 ～ Q Ν, can be used repeatedly to pull the mask to make the mask 3 4, so, the original mask m ~ li. L in ~ "Ν required In time, 祯 is not a large negative change. ΗΠ, will reduce the number of N ？? M 掩 the original mother of the original case R i of P i to reduce the image 1 / α times P 丨 i (ΐ =) ~ Ν respectively Transferred onto the substrate 4 at the same time. -8-This paper size is applicable to the Chinese National Standard (CNS) Λ 心) ί 枯 (210x2 men; if :) ....... --- -------I ^-. ^ 1 ^^^ 1 ^ — ^ 1 ^ — ^ 1-! —-Til 'WIJ--I — ^ 1 — ^ 1. (# &Quot; Note for re-filling of this book R) Economic &quot; -Ministry and Central Bureau of Standards and Labelling Bureau, another labor and consumer cooperatives printed together S 4: 4 Central Bureau of Standards and Economics Bureau of Ministry of Economic Affairs, only consumer cooperatives and printed slaves 6 7 2 a7 H7 V. Invention After explaining (W) l .., the mother pattern Aj of the second sweet mask bottle original vendor tn of M is reduced by 1 / α times of the idle size U i (i = 1 ~ N), and one side and one side are combined # Transfer The substrate 4 is made of a working mask 3 4. In the case of cyanide cesium 2 Φ, # is manufactured: When Γ is used as the mask 3 4, the second wide-scale reduction image is also used to expose the light, and on its mold table 2 The first group of _ i Η ί Η ~ Η of the original mold removal tool R i „and, in the mask library 1 (5, it is stored in 7, directionally arranged 2, N 艏 support plate 1 7 , Put the first group of stencil plates R1 ~ 丨 ΐN, and the second group of mask plates (H ~ QN), and the main control system 9 controls the mask bottle loading machine 丨 9, which will be in Mask library] The transfer of the desired mask original plates R1 ~ RN, q1 ~ QN between ff: S desired mask plate 17 and die stage 2 in R. At the time of this configuration, in the memory package U of the burdock system f1, the transfer template photo plates (i 1 to 8 N, (H to QN) and the alignment audio are stored. In the example of this night, the exposure of a certain plate 4 is in a step-and-repeat manner, and the first button mask original R 1 ~ R. N is reduced. The circle image is exposed to each of the photo plaque fields of the substrate 4 and then Dance, the second group of masks of the original vendor Q 1 ~ QN zoomed out to be exposed on the raspberry board 4. Of course, ft can use a scanning exposure method such as a step-and-scan method, a small projection exposure device to replace the overall Exposure plow if .. The alignment mechanism in Fig. 2 阖 β in Fig. 3 is used not only for the original mold release R ～ R Μ, but also for the reduced original image of the mask original Q 1 ～ Q Ν; The combination of Gao Laiying and Ying (joining). The alignment is the same as that of the mask mask R, so that the two crosses formed on the mask master Q i are aligned with each other. The masked image of a mask dealer R 丨 ~ N_ Case P 1 ~ PN is sequentially exposed to the corresponding photographing area S 1 ~ S Ν -3 3 on a certain plate 4-this paper size applies Chinese National Standard (CNS &gt; Λ4 Regulation枋 （210X2W 公 夂） _ _ _ _ _ _ In In__JJ: __ I— tn t ^ i ^ 1- T _ Γ— _ fn Ju _. 4i A (For the notes on the back of the first reading, please fill in the N) Λ7 Η7 5. Description of the invention (w), as shown in item fl㈤ 阖, the small H images P 丨 1 ~ P ΐ N of each mother pattern P 1 ~ PN (k 2 5 in Fig. 8CD) can be made. The reduced image adjacent to the mother ’s case is merged and exposed at the same time. In the eighth image, the reduced image P I 1 ~ N contains _ like the 7th mother ’s case 3 fi After reducing by 1 / (? Times

之投影圖像2 (i P P 然後+问搽搿對噍搀，第7阖的第2組N痼掩模原版 «1〜⑽之掛阔赛A 1〜A N的縮小圍像Α Π〜N會如第8⑹圖 所示的孝#曝光在第8㈣阏的縮小_像P〖1〜P I N上„在第 ft⑹圈中，鸩縮小阖像A〗1〜Λ丨N接合後的閾像也是第7圖 的梧_案3 Π縮小1 /«倍後之投影鬮像2 0 Α。然後將基板4 I的光阼劑顯像.經蝕刻加工及將殘留的杭独劑圖案剝 離等._板4 I:的投影圖像2CP、26九_成為如第12圖所 示的原販國案27,而完成工作掩模34。 V在本宵施例中，也不一定要在莪板4上預先設置對 _ _記2 4 Λ , 24 B „牝時，也可在於將掩桿原販R i , Q i的 母_萃縮小轉印之際，將所定樺記（例如對準檫記2 1 A， 經&quot;-部中央標舉局負工消費合作杜印紫 (誚尤閱：f-c而之注意事項再填寫本R ) 2 1 (U ft编小轉印於各掩模原販R i , Q i上，而在於將相鄰接 掩模原版的思阔案之縮小_像轉印之際，檢制其檫記的 濟俛位W ,由其檢觸結果以條rF.相鄰接掩模原版的母_ 案编小_悚之轉印份背者。又，也可使用對準樺記2 4 A， 2 4 ti和丄钵檫記濟像_者，以決定下一母鬮案縮小_像所 槩轉印的莘板4 :之衲攝矂域位置者。又，也可和上述 筲施例！完IMS丨樣的，在母_案縮小圖像所轉印的至少 2値臨域上，分別檢測其各_記潛像，而將所得位置資 -4 0 - 本紙張尺度適用中國國家標準（CNS &gt; Λ4規掊（2】0Χ2π公处） 449672 經滅部中央樣挲局貝工消费合作社印^ Λ7 H7 ___ 五、發明説明（μ ) 訊加w平玲化與理，或統計處理，以決定下一母圖案缔 小阚悚所要轉印的苺板4上之抽攝匾域位置者。 乂，水例是在某板4的1個抬攝區域丄，用2組掩模 脖販《 i . Λ i做咢审_光，因而，闬撺榉鹿版Q i的第1曝光 所加於某板4之曝光罱和用陆樽淖版A i的第2曝光所加 於摧板4之嗥光鼠睜柑等即，將其設定在桉照光阳劑 的威光特件所決定的_當曝光鼠之一半為理想。但R要 由第〗衫第2曝光所加於苺板4之曝光最總和可逹到上 从滴常曝光黾時，也可使第1曝光和第2曝光所加於基 板4的曝光簞不相同„ 乂，例如由第1曝光所加於基板4 的瞟来爵来浄箝栲俏（谪當曝光冨：的一半）時，可由第2 暍光W大於其目榉悄（適常曝光1的一半）的曝光1加於 苺枷4 ，以補倚其不ί(ΐ部分。 如第7阃的原版阔案27中，例如形成有密集圖案 和视、&gt;:圖樂時，不樺珂對於掩模原陆R 1〜R Ν ,對於掩模 暸版t) 1〜〇 Ν中的1 Η掩桿嗦晞（Η ,也司桉照母_梁Λ i的 怙況，使嗶光條件、ΗΠ照明光學条统1内的光阁形狀或 大小..和相關偁數（&lt;τ悄 &gt; 及投影光畢条統3的數值孔徑 等予以最合病化#·^又，殍使其曝光條件最合適化，也 坷在柃影光畢集統3的光障而附近設置装卸g如的光學 滹光鮮（所謂光障濾光器），或袖用使投影光學系统3的 阔像闹和荜板4的表而之間，在相對的所定範圍内産生 #勒，；·所满累推焦點法（柔性法）亦可。 β ,有關於掩模晾版Q 1〜Q N ,其母掩模_案如樺含有 -4 1 - 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210Χ297公焓） ----^——^ ^ }-------訂—------線 &gt;- (¾先間讀.背而之注意事項再填舄本W ) Λ7 H? &gt; 4 496 72 五、發明説明（心） 接_孔薄的祇立圖案畤，以接用在於將該阃案曝光於掩 枠堪板的啡問，使决墒榉某板沿养曝光光學糸統的光軸 方向移_之所謂累淮焦點法為佳。或並用此累進焦點法 和W _在投影光學糸統的光障商的，將通過以其光軸為 中心的_形匾域之照明光線遮住之光學濾光器亦可。又 ,以诗撺楔作為移相掩模，而將照明光學糸統的σ情設 定為例如η」〜f) · 4稈度，拍採用上述累進焦點法，亦可。 Y .有關於渖榉原販ΙΠ〜Q N ,其光罩ft不限定於只是 由絡箬睹光屑所锅成的掩樺，而卒間調頻型（A為公司 -利倍送切）、邊綈強調犁、没瀑淡點阖型等等的移柑掎楔 均〇1 r Λ以并夺間調頻犁或痨綠強諏犁中，是要在掎模 苺椒I审槲赖光丨1ί藥，以形成移枏器圖菜，因而要準備 例如其移蜊器用的母掩榑，以作為Μ榫用途。 如丨.钵、木W铯例的工作掩樺：Μ之原版_菜2 7是由2 組的墒榉庳版R ΐ〜R. Ν和Q 1〜Q Ν的母鬭案重《曝光所形成 ,眈時，在於谙些掩樽原版母_案的描棗之際，其所産 斗的阖案位冓誤差和線寬度的不均勻等在詼2組掩模嗦 版之間饱有所差異。因而，將該2組掩模原版母圖案的 綱小阐俾爭#曝光，可在各阚案的縮小圖像中，使掩楔 脖版的描案装W之鬮柒位菁誤差和線寬度不均勻等被平 杓化rfil滅低，因眈可形成高精度的工作掩楔34之原販鬮 ^ 2 7. Y，如使W T作撺模：H的投影曝光裝置之投影_像成 俾恃忡不合平押想狀熊畤，不保對於梅模原版R i，而對 -4 2 - 本紙張尺度適用中國國家樣车（CNS &gt; Λ4^枋（210X297公$ ) 計先M讀背而之注意事項#填朽本Κ ) -· 丁 線 經滅部中央標奪局只工消*；合作社印¾ 449672 經潢部中央標準局Μ工消费合作社印聚 A7 H7 五、發明説明（&amp; ) 於掩桿原版《 i，也在在於其母圖案A i的縮小圃像的投影 之際，怦曝光位置從原來的怕攝Μ域事先向X方向及Y 方向横向位移，以柢消其失舆等。又，對於其投影倍數 或失哀特件等也事先加以修（F。由此，要使用其工作掩 桿:Η時，nf曝光接近於珣想圖像之圃像，而提高車锓精 度等n 7 ,有關在Φ准掃描方式的投影曝光裝置中育瘅生的 ，所馮歪斜誤差，也可對於掩揖原版R i及q i兩者的在於 曝光各掩樽原版的圖案圖馋之際，事先使各掩模原版的 圖窣阖像歪斜，以抵消其歪斜誤差，來對應之。 V，在木宵施例中，在2组掩模原版R. 1〜R N , Q ]〜Q N 之中，也可將其形成有周期件密集圖窠等之掩模原販作 為例如為移相掩模。 父，在本實施例中，在2組掩模原版R1〜，Q 1〜Q N !:形成可為相同的母圖案，而該2紐掩模原販母圖案的 _像是軍#曝光於苺板4丄的同一拍攝區域者，而其另 一例是也Ρί將第7 _的母_案3 fi分割為百不同棑列（分割 界線）的；ί組母：圖宰、而將該2 Μ母圖像的縮小圖像軍# 曝光於祛枷4 [:者。眈時，該2組之中的第1甜母圖案 如為第7國的Ν個母「圏葵Ρ 1〜Ρ Ν時，這些母_案Ρ 1 ~ Ρ Ν 的縮小_丨搀Ρ [丨〜Ρ Τ Ν育如第9树阔所示的，在某板4上的 枘榀阽域Μ内一闹接合一商曝光成為投影画像2 6 Ρ。但第 9 «a&gt;圖是2 時的情形。 而，其第2甜多數個母圖案如為將第7圖的母圖案36 -4 ;卜 本紙張尺度適用中國國家標隼（CNS ) Λ4現格（210X297公兑） -------—LI i n n n n 4 i HI in i- - -1—i ! -- ^^1 « n n n 1^1 /Ώ^. J 1KV, (邻尤閲讀背而之注意事項#^¾本s ) 經溁部中央標卑局只工消費合作社印裝 4 496 7 2 Λ7 Η 7 五、發明説明（知） 從Η母圖案P 1〜P N的Y方向中央位置分割之圃案時，則 ，如第9 (h)阐所示f第2組的多數個母阔案的編小1丨像 B Μ〜Βί Η丨)會存Y方向榉跷於第9籾圖的縮小圖像P I ] ~ !* ί 2 5而形成投影圃像2 (i Β ,审褥曝光於投影圖侏2 G Ρ。眈 時，在第9⑶_的縮小阖像P U上，會如第9 (c) _所示的受 剁其禪|宰尚穑為舖小圖像（Μ 1的一半，而和縮小丨像Ρ I 1 的左半邊具同一 _築的縮小圖像Β丨1，和横跨於縮小圖馋 Ρ ί 1及iM 的區域，而具縮小_像P I 1和P U (I各區域的一 半之編小_俛Β ϊ 1 0的左半邊分之曝光。此時，縮小圖像 b τ〗η的左半瘙是和縮小_像p u 〇的左半邊同一圖案，而 请阔|菌案也咅《嗶曝光。 如眈做曝光時，不僅在多秉曝光的掩模原版間的描棗 誤差會平均化，3在多窜曝光之際，第2國投影光學糸 涑3的曝光區域内之位置也會變化，因而，投影光學条 统3的牛哀和曝光區域内的轉印線寬度的不均勻也會平 杓化。因此，可以更高精度的將母圖案编小圉像轉印於 苺板4」：„ 即如第1 1)尚圖的誇大圖所表示，第2 |_投影光學条统3 的嗥光區域内如庠生箭頭n κ l所示的失真時，使用其右半 瘁卜’κ所轉印的圖像和使用其左半邊所轉印的圖像，被合 合（多軍曝光）為如第1 fl (b) _的圖像s Λ時，由於平均化的 效粜，在總合_丨：的失裒#減少到如箭頭DT所示者^又， 在第9圖中，第2組縮小阖像ΙΠ fi〜Β I 2 5是横跨於第1組 縮小_馋1M 1〜P T 2 5的Y方向之界線，因而Y方向的接合 -4 4 - 本紙張尺度適用中國國家標準（CNS ) ( 2!Ox2yr公疗） -先閱讀背而之注意事項再填寫本頁) 、π 線 yll 經濟部中决標準局貝工消费合作社印^ A:: R 7 ΟProjected image 2 (i PP then + ask 搽 搿 confrontation, 7th 组 2nd group N 痼 mask original «1 ~ ⑽ of the wide open match A 1 ~ AN reduced image Α Π ~ N will As shown in Fig. 8, the xiao # is exposed at the 8th reduction_image P 〖1 ~ PIN on the ft⑹ circle, the 鸩 reduction image A〗 1 ~ Λ 丨 N after joining the threshold image is also the 7th The picture of Wu_Case 3 Π reduced by 1 / «times the projection artifact 20 0 Α. Then the substrate 4 I photoemulsion was developed. After etching and peeling off the remaining Hanging agent pattern, etc._ 板 4 I: The projected images 2CP, 26, 9_ become the original national case 27 as shown in FIG. 12, and the work mask 34 is completed. V In the embodiment of this night, it is not necessary to preliminarily When setting the pair _ _ 2 2 Λ, 24 B „牝, you can also reduce the size of the original birch (for example, aligning 2 2) when the mother _ extract of the original vendor R i, Q i is reduced. A, The Ministry of Central Government designated the Bureau of Work and Consumption Cooperation Du Yinzi (You especially read: fc and note the matter and fill out this R) 2 1 (U ft edited small transfer to the original mask dealer R i , Q i, and it lies in reducing the size of the original mask adjacent to the original mask _ like the occasion of transfer, To control the position W of its memory, the result of the inspection is rF. Adjacent to the original mask of the master _ case editor _ horror transfer copy. Also, you can use the alignment 2 4 A, 2 4 ti and the person who remembers the image _ to determine the size of the next parent image reduction _ image 4: the position of the photo field. Also, it can be the same as the above筲 Example! After completing the IMS sample, at least 2 tentative areas transferred from the master case reduction image, each of the latent images will be detected, and the obtained position will be -40.-This paper size applies Chinese National Standard (CNS &gt; Λ4 Regulations (2) 0 × 2π Public Office) 449672 Printed by the Shellfish Consumer Cooperative of the Central Sample Bureau of the Ministry of Economic Affairs ^ Λ7 H7 ___ V. Description of the Invention (μ) Xing Ling w Ping Linghua and reasoning, Or statistical processing to determine the position of the plaque field on the raspberry board 4 to be transferred by the next mother pattern to create a small horror. 乂, the water example is in one of the up-and-down areas of a board 4, and two groups are used. The mask neck seller "i. Λ i does the inspection_light, so the first exposure of the beech deer version Q i is added to the exposure of a certain plate 4 and the second exposure office of the Lu Zong version A i Added to Destroy 4 , Set it in the eucalyptus radiant special guangguang special _ when one half of the exposure mouse is ideal. But R should be from the second exposure to the second exposure on the raspberry board 4 the total sum of exposure can be up When the drop exposure is used, the exposures added to the substrate 4 by the first exposure and the second exposure may be different from each other. For example, the first exposure and the second exposure added to the substrate 4 are used to clean the image (谪When the exposure time is half of the exposure time, the exposure time 1 from the second exposure light W greater than its quietness (half of the normal exposure time 1) is added to the raspberry timeline 4 to compensate for its non-existence. For example, in the original version 27 of the 7th example, for example, dense patterns and views are formed, &gt; Tule, for the mask original land R 1 ~ R Ν, for the mask t 1 1). The 1 Η cover rod in Ν (Η, also reflects the condition of the mother_liang Λ i, so that the light conditions, the shape or size of the light box in the illumination optical system 1 and the related number ( &lt; τ Quiet &gt; and the numerical aperture of the projection light system 3 are optimally diseased # · ^ Furthermore, the exposure conditions of the light system are optimized, and the light barrier of the light system 3 An optical filter (a so-called light barrier filter) for mounting and dismounting is installed nearby, or a sleeve is used to make the wide image of the projection optical system 3 and the surface of the fascia 4 to generate #LE in a relatively predetermined range. ; · The full exhaustive focus method (flexible method) is also available. Β, about the mask Q1 ~ QN, the master mask_case such as birch contains-4 1-This paper size applies Chinese national standard (CNS ) Λ4 specification (210 × 297 enthalpy) ---- ^ —— ^ ^} ------- Order -------- line &gt;-(¾Read it first. Please fill in the back notes Transcript W) Λ7 H? &Gt; 4 496 72 V. Description of the invention (Heart The _thin-hole pattern with thin holes is used to expose the case to the cover of the plate, so that a certain plate of beech moves along the optical axis of the exposure optical system. Focus method is better. Or use the progressive focus method and W _ in the optical quotient of the projection optical system, the optical filter which will be blocked by the illumination light of the _ shaped plaque field centered on its optical axis. In addition, the poetic wedge is used as a phase shift mask, and the σ condition of the illumination optical system is set to, for example, η ″ ~ f) · 4 degrees, and the progressive focus method described above may be used for shooting. Y. The original zelkova pedestal ΙΠ ~ QN, the mask ft is not limited to the cover made of sap, but the frequency modulation type (A is the company-Libei cut), the side ridge emphasizes plowing, no The citrus wedges, such as the waterfall light spot type, and the like, are all in the FM plow or the green strong plow, and the medicine is to be tested in the raspberry pepper 1 to form the transfer. For example, it is necessary to prepare a female mask for a clam-moving device for use as a mortise. For example, the working mask of a bowl and a wooden cesium: The original version of the _ dish 2 7 is composed of 2 groups. The beetle version R ΐ ~ R. The mother case of Ν and Q 1 ~ Q Ν was re-formed. "When it came to light, it was in the description of the original mother _ case, the case of the bucket it produced. The position error and the unevenness of the line width are different between the two groups of mask masks. Therefore, it is possible to expose the outline of the master patterns of the two groups of masks in the two groups. In the reduced image of the mask wedge, the position error of the masking version of the wedge neck and the uneven line width are eliminated by the flattening rfil, because it can form a high-precision working wedge 34.阄 ^ 2 7. Y, if WT is used as the model: the projection of H's projection exposure device _ like the image is not equal to the imaginary bear Xiong, not guaranteed for the original version of Mei model R i, but for-4 2- This paper size applies to the Chinese national prototypes (CNS &gt; Λ4 ^ 枋 (210X297) $), and the precautions should be taken first. #Filling this Κ)-· Ding Line by the Central Ministry of Public Security Bureau of the Ministry of Work only eliminates * Cooperative cooperatives ¾ 449672 Ministry of Economics and Standards Bureau Central Standards Bureau M Industrial Consumer Cooperatives Cooperatives A7 H7 V. Description of the invention (&amp;) The original version of the cover "i, also lies in the reduction of the miniature garden image of its mother pattern A i Occasion, thumping exposure position from the original fear subject Μ domain prior to the lateral displacement X and Y directions, to eliminate the final analysis its loss Yu like. In addition, the projection magnification, sorrowful features, etc. have also been repaired in advance (F. Therefore, to use its work mask: Η, nf exposure is close to the garden image of the imagined image, to improve the accuracy of the car, etc. n 7 The skew error caused by the projection exposure device in the Φ quasi-scanning method can also be used for the masking of the original Ri and Qi. The original image of each mask is skewed in advance to counteract its skew error and correspond to it. V, In the example of the wooden night, among the two sets of mask originals R. 1 ~ RN, Q] ~ QN Or, the original mask with the periodic pattern dense pattern can be used as a phase-shifting mask, for example. Father, in this embodiment, two sets of mask originals R1 ~, Q1 ~ QN are formed: It can be the same mother pattern, and the 2 button mask of the original vendor's mother pattern _ looks like the army # exposed to the same shooting area of the raspberry board 4 丄, and another example is the 7__ mother_ case 3 fi is divided into hundreds of different queues (segmentation boundary); 组 group mother: Tu Zai, and the reduced image army of the 2 Μ mother image is exposed to dispense 4 [: 者At first, if the first sweet mother pattern in the two groups is the N mothers of the seventh country, "when the sunflowers P 1 ~ P Ν, these mothers _ case P 1 ~ Ρ Ν reduction_ 丨 搀 Ρ [丨As shown in the ninth tree, as shown in the ninth tree, the exposure in the field M on a certain plate 4 is exposed to become a projected image 2 6 Ρ. But the ninth «a &gt; picture is at 2 o'clock However, the second sweet majority mother pattern is the mother figure 36 -4 of Figure 7; the paper size is applicable to the Chinese national standard (CNS) Λ4 (210X297) ----- --- LI innnn 4 i HI in i---1-i! Central Ministry of Standards, Ministry of Justice, only printed by consumer cooperatives 4 496 7 2 Λ7 Η 7 V. Description of the invention (knowledge) In the case of a garden divided from the central position of the mother pattern P 1 ~ PN in the Y direction, as in Section 9 (h) The editor 1 of the majority of cases of f in the second group, as shown in Figure B, such as B Μ ～ Βί Η 丨) will have a reduced image PI in the Y direction as shown in Figure 9] ~! * ί 2 5 to form a projection garden image 2 (i Β, the examination mat is exposed to the projection image 2 G Ρ. At the time, the reduction in the 9th __ On the PU, it will be chopped as shown in Section 9 (c) _ | Zaishang is a small image (half of Μ 1 and the same as the left half of the reduced 丨 like Pl I 1) Reduced image Β 丨 1, and the area spanning the reduced image 馋 Ρ ί 1 and iM, but with reduced _ like PI 1 and PU (half of each area of the editor _ 俛 Β ϊ 1 0 divided by the left half Exposure. At this time, the left half of the reduced image b τ η is the same pattern as the left half of the reduced _ like p u 〇, and the case is also beep exposure. For example, when exposure is performed, not only will the tracing errors between the masked originals of the multiple exposures be averaged, 3 the position in the exposure area of the second country projection optics 3 will also change during multiple exposures, Therefore, the unevenness of the projection optical system 3 and the unevenness of the transfer line width in the exposure area are also smoothed. Therefore, it is possible to transfer the mother-patterned small image to the raspberry board 4 with higher accuracy: "that is, as shown in the exaggerated figure of 1) Shang, the 2 | _ projection area of the projection optical system 3 When the distortion shown by the generated arrow n κ l is inside, the image transferred using the right half of the '′ κ and the image transferred using the left half of it are combined (multiple exposure) as At the 1st fl (b) _ image s Λ, due to the effect of averaging, the total loss # in the total _ 丨: is reduced to that shown by the arrow DT. Again, in FIG. 9, the 2nd The group reduction image ΙΠ fi ~ Β I 2 5 is the boundary in the Y direction that spans the first group reduction_ 11M 1 ~ PT 2 5 so the junction in the Y direction -4 4-This paper scale applies Chinese national standards ( CNS) (2! Ox2yr Public Therapy)-Read the precautions before filling in this page), π line yll Printed by the Bayer Consumer Cooperative of the Bureau of Standards of the Ministry of Economic Affairs ^ A :: R 7 Ο

w I Λ 7 H7 五、發明説明（〇 )w I Λ 7 H7 V. Description of the invention (〇)

誤莘圯齊由平均效果所減低D 3，」_砵例芊的第2組母_築是在第1組母圖案的Y 方向ψ央部位被剿分，(Π , &amp;可使第2組母圖案在第1 組树圈萃的）（方向之間被剷分者，准而，也可使第2紐 掙IJI案茌第}糾母_案的X方向和Y方向之間被分割者 。以禧辟悄形時，在第7晒屮，其第1紐母圖案是將母 國莬Mi在縱榉分割為例如4等分時，第1組的1 G楢（4 X 4 解）母國窠之編小圖像P Η〜P I〗（5會如第1〗©圖所示的， 存袪板4的圇窠區域2 5 .1: —而接合一而曝光為投影_像 2 « i&gt; 〇然後第2組的2 5倘母圃案之编小阖像C Τ ]〜C Ϊ 2 5會 如笔丨1⑹園所示的存苺板4的國案區域2 5丄一而接合一 制审曝采為投影阖像2 fi 如此，使第2組母阖案的分 割晬分向）{方向於Υ方向錯開，在最後可使投影圖像在X 方向和Υ方向的塘接誤差由於平均化效果而被減低。 V ,丄述仟一例中，其多甫曝光的次數祯不限定為2 次，也可用：ί细以上的掩模原版群，以做3次以上的多 軍曝光。 接著説明使用如上逑所製造的第i圃或第7晒的工作 掎撐：U ,以准行曝光時的動作之一例。 第1 _是裝上其Γ作掩模；ί 4的縮小投影犁曝光裝置之 ΐ埤韶位I瘦ρ在此第1 2圖屮，在被保持於圖未示的掩模 台丨之Τ作撺模4的F _面、猙介以縮小倍數】/ A ( /3是5 成4等）的投影光學条統42,配置有晶，晶HW的表 闹绛布有光阳劑，其表而是被保持在和投影光學条統4 2 -4 Γι - 本紙張尺度適用中國國家標準（CNS ) Λ4规梠（210X29·?公兑）By mistake, D 3 is reduced by the average effect. "_ 砵 例 芊 The second group of mothers is built at the center of the first group in the Y direction ψ. (Π, & The group mother pattern is extracted from the tree circle of group 1) (divided between directions), and it can also make the 2nd New Zealand IJI case 茌 the first} mother_case division between the X direction and the Y direction In the form of Xipi, in the 7th sun, its first button mother pattern is when the mother country 莬 Mi is divided into 4 equal parts in the longitudinal beech, for example, 1 G 楢 (4 X 4 solution of the first group) ) Small image P 母 ~ PI edited by the mother country (5 will be as shown in Figure 1), the area 2 of the storage plate 4 2 5 .1: —and the exposure is a projection image 2 «i &gt; 〇 Then the 2nd group of 2 5 If the mother ’s case is a small portrait C Τ] ~ C Ϊ 2 5 will be like a pen 丨 1 The garden of the raspberry board 4 shown in the national case area 2 5 丄 1 However, the combination of a single system exposure is a projection image 2 fi, so that the division of the second group of parent projects is divided into {directions in the direction of Υ, and the projection image can be made in the X direction and the Υ direction. The connection error is reduced due to the averaging effect. V, In one example, its multiple exposures The number of times is not limited to two, and it can also be used: a mask master group with a size of more than three to make multiple military exposures of three or more times. Next, the use of the i-th garden or the seventh-time work support made by the above-mentioned: U is an example of the action during the quasi-exposure. The first _ is to install its Γ as a mask; 4 4 of the reduced projection plough exposure device is shown in Figure 12 here. It is maintained on a mask table (not shown in the figure), where T is the F-plane of the mold 4 and the reduction factor is reduced] / A (/ 3 is 50 to 4, etc.), a projection optical system 42 configured with crystals, crystals HW's watch is covered with a brightener, and its surface is kept in the projection optical system 4 2 -4 Γι-This paper size applies the Chinese National Standard (CNS) Λ4 Regulations (210X29 ·? Kind)

(邻先間讀f而之注意事項#填寫本S -訂 線！ ^ 449672 Λ7 H7 經&quot;—部中次標卓局Μ工消费合作社印製 五、發明説明 (“ ) \ \ 的 m m 面 為 教 Λ 晶 片 Η 是 經 介 以 _ 未 示 的 保 持 器 被 保 ί ί | 存 u. 件 4 3 1. ， 試 件 台 4 3 B 7^ 被 固 定 在 ΥΧ台 4 4 丄 〇 而 依 1 1 據 試 件 台 4 3 上 的 移 m 鏡 4 5 mX ,4 5 R) Υ及其對應的雷射干擾儀 1 先 i 所 測 的 庳 m ' 以 驅 動 X Υ 4 4 » 使 晶 Η W 定 位 0 閱 讀 1 [ '1 形 成 茶 準 櫸 紀 4 7 Λ , 4 7 B的 苌 準 搮 記 m 件 4 6 疋 被 固 背 而 1 之 1 存 Γί^, Π- 4 3 丄 1 將 Ί.： 作 掩 模 3 4 的 案 區 域 25從 X 方 注 1 ¥ 向 夾 於 其 間 所 形 成 的 對 準 m 記 2 4 Λ , 1 4 Β之 方 • 設 置 掩 項 I 1 槔 對 準 m 對 Ψ· 檢 m 器 4 I A , 4 1 Β 以 牝 構 成 時 也 疋 利 填 寫 1 J 本 ( 用 標 4 7 A , 4 7 Η &gt; 對 ψ- 記 2 4 Λ , 2 4 Β 及 對 準 檢 潮 Τ\ ί I 器 4 1 A . 4 1 II - 以 將 丁. 作 掩 模 34對 m 於 試 件 4 3 〇 然 後 * E i 做 Ψ m 曝 光 m ' 使 用 圖 未 示 的 品 Η 用 對 準 撿 測 器 (例如 ί ί 闬 Λ-Α- 1 國 屮 的 對 檢 m 器 )以將晶片V 上的各抬攝區 1 訂 域 4 8對 準 接 m 將 品 Η W 上 的 曝 光 對 象 之 柏 攝 區 域 4 8 1 依 位 於 曝 光 位 菁 後 i 由 圖 未 示 的 昭 &lt;!&gt;&gt; 明 光 學 % 統 以 受 1 1 m Ψ 分 子 雷 射 光 的 曝 光 光 線 I L 1照射於工作掩模3 4的圏案 I I U 域 2 Γι 1 ifri 將 圖 案 區 诚 2 5 内 的 原 版 m 案 2?以 縮 小 倍 數 1 / β 1 1 Aiii 小 的 _ 像 2 7 W曝光於拾攝區域4 B〇 如此， 在晶H w 上的 線 [ .各 攝 ψη m 原 版 『顧 蔡 的 線 小 圖 m 曝 光 後 1 將 晶 Η W 顯 i I m ‘ 猙 剌 加 Τ 等 之 處 理 後 在 晶 Η W 丄 的 各 抬 攝 區 I ui m 成 半 η m m W 的 某 P 電 m 圖 案 0 在 丨比 J 於 第 12 _ 的 1 線 小 抟 曝 光 裝 靑 中 是 採 用 例 如 將 由 F1 ΠΗ Η W 上 的 多 1 1 W. !ύ 榀 4 8所 m 出 的 少 個 桕 攝 區 m (對準泊攝） 之 1 1 椁 il? ' 分 別 由 對 準 檢 酬 器 檢 制 9 而 將 其 多 數 標 記 的 位 置 1 I 資 訊 綷 練 計 處 理 1 以 決 定 晶 Η W 上 的 各 抬 攝 區 域 的 曝 光 1 1 -4 C- 1 1 1 1 本紙張尺度適用中國國家標準（CNS ) A4规枱（210/ 297公筇） 丨i 4 496 72 Λ 7 Β7 五、發明説明（α ) 位W耆m之所謂增強式全向對榫（以下稱K G A )方式。Ε G A 方式是#於例如特開昭（Π - 4 4 4 2 9號公報及其對應的美國 軎利第4 7 8 η η 1 7號中有所公佈，在木件國際專利申諌所指 定的指定圃，或所癭擇的選擇固之國内法令所容許之下 -槔闬J:钵公報从美_專利的公佈内容，作為本文記戟 -P.--部分 η 乂，工作撺榫3 4的曝光用投影曝光裝菁也可使闬例如 出槌棉描方式的棕描_光犁之縮小#影型曝光裝置。 ，齊掩例：ί 以下，参照_而説明本發明的實施例3(Neighbor first reading f and the precautions #Fill in this S-booking! ^ 449672 Λ7 H7 Economics &quot;-Printed by the Ministry of Industry and Standards Bureau, M Industrial Consumer Cooperative, V. The mm surface of the invention description (") \ \ In order to teach Λ chip 保 is protected by a holder not shown | store u. Pieces 4 3 1., test piece table 4 3 B 7 ^ is fixed to ΥΧ 台 4 4 丄 〇 and according to 1 1 According to the moving-m-mirror 4 5 mX, 4 5 R) on the test stand 4 3) Υ and its corresponding laser jammer 1 im ′ measured by i to drive X Υ 4 4 »Position the crystal Η W 0 Reading 1 ['1 Forms the quasi-quasi-notes of the tea quasi beech period 4 7 Λ, 4 7 B m pieces 4 6 疋 are fixed and 1 of 1 is stored Γί ^, Π- 4 3 丄 1 will be Ί .: cover The area 25 of the mold 3 4 is from X square Note 1 ¥ To the alignment m formed between the two sides Note 2 4 Λ, 1 4 Β square • Set the masking item I 1 槔 align m to Ψ · m detector 4 IA, 4 1 Β is also composed of 疋Fill in the 1 J book (use the standard 4 7 A, 4 7 Η &gt; record ψ- 2 4 Λ, 2 4 Β and the tide detection device Τ \ ί I device 4 1 A. 4 1 II- Mask 34 pairs m with the test piece 4 3 〇 and then * E i do m exposure m 'using a product not shown in the figure, using an alignment detector (for example, ί ΛΛ-Α-1 1 Device) to align each of the uptake areas 1 on the wafer V with the registration area 4 8 m and position the exposure area of the exposure object on the product W 4 8 1 according to the exposure position i. ;! &gt; &gt; Bright Optics% is exposed to the exposure light IL 1 of the molecular laser light of 1 1 m Ψ on the work mask 3 4 of the project IIU domain 2 Γι 1 ifri The original version m in the pattern area Cheng 2 5 Case 2? With a reduction factor of 1 / β 1 1 Aiii, a small image like 2 7 W is exposed to the pickup area 4 B. So, the lines on the crystal H w [. m After exposure 1 will show the crystal W i i m After adding T, etc., a certain P-electron pattern 0 in each of the uptake areas I ui m of the crystal W W is a half η mm W in the 1-line small-line exposure device that is greater than J at 12th. It is, for example, to use 1 1 椁 il? Which is a small number of the photographing areas m (aligned with the camera) out of m 1 1 W.! Ύ 榀 4 8 on F1 ΠΗ Η W. Control 9 and position most of its marks 1 I Information training plan processing 1 to determine the exposure of each uptake area on the crystal W 1 1 -4 C- 1 1 1 1 This paper size applies the Chinese National Standard (CNS ) A4 gauge (210 / 297mm) 丨 i 4 496 72 Λ 7 Β7 5. Description of the invention (α) The so-called enhanced omnidirectional tenon (hereinafter referred to as KGA) method of W 耆 m. The Ε GA method is #in, for example, published in JP-A-Zhao (Π-4 4 4 2 9 and its corresponding US Patent No. 4 7 8 η η 1 7 and designated in the International Patent Application for Wood Parts The designated nursery, or the choice of choice, as permitted by domestic laws and regulations-槔 闬 J: bowl gazette from the United States _ patent publication content, as this article records -P .-- part η 乂, working tenon The projection exposure device for exposure of 3 4 can also be used, for example, to produce a brown trace _guangli of the shrinkage # shadow-type exposure device. The example is as follows: 以下 The following describes the embodiment of the present invention with reference to _ 3

萌〗3国是有關木發明宵施例3的光罩製造方法説明國 。如第]3 (c)、⑼圖所示，本例的製造對象之光罩是在於 宵際ί.製造半導體裝置時所使用的工作掩模W R , W R 1。在 這掩槔WR， W Κ丨上，將原版圖案夾於其間的形成2傾相 當於對苹檸記之圈！案P f，在其原版圖案内，形成轉印於 晶片」：後成為晶Η _記之圖案PwD 7 ,永例的T：作掩模W K , W R1是和育施例丨及實施例2 同榛，經介以光學式捋影曝光裝置，使用在]/办倍的投 槩」.者。 木例的丁作撺樽W R是在所定的苺板上形成掩模材料之 薄暌，經痒布光叩削後，將從第]3糾、⑹阖的怍為母掩 棹之第1及第；ί掩模原版M R 1 , H R 2圖菜區域中所選出的 ,多數電路圖築單元的光學上之等倍影像或縮小影像， 以所定棑列轉Φ於該棊板上而製成之。ΕΠ經此轉印後， -4 7 - 本紙張尺度適用中國國家標準（〔~5)六4規梠（2丨0乂297公荩） 讳先閲讀背而之注念事項再4寫本石； -訂 魄！ 經滅部中央標隼局負工消f合作社印製 443672 Λ7 !Π 經&quot;1部中史標&quot;局Μ工消费合作社印狀 五、發明説明（4 ) 1 1 % 阳 _ 的 m m 1 以 所 m m 的 杭 η 劑 圖 案 作為 摘模 1 1 鋅 渦 刻 如 X 後 將 抗 η 劑 m 離 而 形 成 如 第 1 3 (C) 圈所 示 ! 1 的 服 _ N 窠 P r 〇 第 1 3(dl 的 丁 作 掩 模 w m的製诰方 ih 1 尤 1 和 T 作 墒 m mH m ? η 其 原 版 _ 菜 是 和 丁作 掩模 WR 閱 1 1 不 Ini J-A 0 fi 而 1 I 之 1 以 fft 秤 情 形 時 i 在 ΛτΛ- 1 掩 模 版 H l·? 1的圖築區域中， 形 % 1 成 如 第 1 3 圖 所 示 的 &gt; 其 —* 例 為 半 m 體 大 型 積體 電路 (LSI) 項 再 寫 1 的 棑 常 於 中 央 m 理 機 (c P li )之電路圖案 军 元Pa ,相 當 1 1 本 I 於 靜 熊 m 機 存 取 記 憶 體 (SRA Μ }之電 路 圖 案 tao 早 元Ph ,相 當 JT 1 I 於 倚 m 存 取 控 制 器 之 電 路 _ 案 utt 早 元 P c i 及 ,其 他電 路 1 1 111 mi m 元 Pd ' P e 〇 又 ， 這 圖 案 rjti 阜 元 相 η 之 間是 由遮 光 1 1 «α H A r)f 隔 離 形 成 -* 對 將 其 圖 案 區 域 夾 在 中間 之對 'Φ 1 訂 檸 r i a 1 , K A 1 Λ J 然 後 在 第 2 掩 模 版 02的_案區域内， 形成如第1 3 1 1 vb) 丨_ 所 示 的 成 為 i, fn 的， 相當於唯讀記憶體（R 0 t〇之 電 1 I 路 m m rats 早 元 P f » 及 相 常 於 m 態 m 機 存 取 記 憶 體（DRAH)之 1 1 電 路 _ 案 ασ 車 元 p g 以 及 具 有 1 到 4 端 子 π反及”閘 或”反或” % | 閑 m 八 η m. 的 1 相 當 於 閛 陣 列 之 電 路 _ 案 卑 元 Pn, Pi, Pti i | η 而 存 其 椅 模 原 版 M R. 2的圖案區域内， 舱形成作為工作掩 模 用 的 對 m 記 之 電 路 圖 案 〇〇 単 元 P r及 成 為 晶 片標 記之 電 丨. 路 _ 窠 m 記 P w 在 tt 掩 模 原 版 MR2 中， 其各電路圖案單元 ! t 相 η 之 間 &amp; 由 遮 光 椁 S Α所隔離 » 形 成 一 對 將其 _菜 區 1 1 域 夾 中 間 之 對 準 m 記 RA 1 , R Λ 2 0 1 1 在 谙 榑 情 形 時 第 I:⑴ S 闺 的 工 作 掎 模 WR , WR 1阃案 1 1 -4 8 - 1 1 I 1 1Meng〗 3 countries is a country to explain the photomask manufacturing method of the third embodiment of the invention. As shown in Fig. 3 (c) and (b), the masks to be manufactured in this example are the work masks W R, W R 1 used in the manufacture of semiconductor devices. On this cover WR, WK 丨, the original pattern is sandwiched between them to form a 2-tilt equivalent to the circle of Ping Ning Ji! The pattern P f is formed and transferred to the wafer in the original pattern. ": It becomes the pattern PwD 7 of the crystal 记, the T of the permanent example: as the mask WK, W R1 is the example and the embodiment 2 and Example 2 Tong Zhen, Jing Wei uses an optical shadow exposure device, which is used in the [] / office times. " The wooden case of Ding Zuo 撺 WR is a thin mask of mask material formed on a predetermined raspberry plate. The first; the mask original MR 1, HR 2 selected in the drawing area, the optically equal or reduced image of most of the circuit diagram building units, is made by a predetermined queue on the 于 plate. ΕΠ After this transfer, -4 7-This paper size is in accordance with Chinese national standard ([~ 5) six 4 rules (2 丨 0 荩 297 public 荩) Taboo reading the memorandum of the back first and then writing the writing stone; -Order! Printed by the Ministry of Economic Affairs, Central Bureau of Standards and Labor, Cooperative Cooperatives, printed 443672 Λ7! Π, "Ministry of China History Standard", Bureau of Industry, Consumer Cooperatives, Seal of V. Invention Description (4) 1 1% yang_ mm 1 Take the pattern of the η agent in mm as the mold release 1 1 The zinc vortex is engraved as X and the anti-η agent m is separated to form as shown in the circle 1 (C)! 1 of the service _ N 窠 P r 〇 No. 1 3 (The production method of dl is used as a mask for wm, ih 1 especially 1 and T is used as a preparation for m mH m? η. Its original version is d and used as a mask for WR. Read 1 1 not Ini JA 0 fi and 1 I 1 to In the case of the fft scale, in the drawing area of ΛτΛ-1 1 mask H l ·? 1, the shape% 1 becomes as shown in Fig. 13 &gt; its-* example is a half-m large-scale integrated circuit (LSI ) Item 1 is written in the circuit pattern of the central m physical machine (c P li), which is equivalent to 1 1 circuit diagram of the memory access (SRA Μ) in the static bear m machine. Tao early element Ph, equivalent to JT 1 I Yum m access controller circuit _ utut early element P ci and other circuits 1 1 111 mi m element Pd 'P e 〇 And, this pattern rjti Fuyuan phase η The space is formed by the light-shielding 1 1 «α HA r) f isolation-* pair sandwiches its pattern area with the pair 'Φ 1 order ria 1, KA 1 Λ J and then in the _ case area of the second mask 02 To form i, fn as shown in section 1 3 1 1 vb) 丨 _, which is equivalent to read-only memory (R 0 t〇 of electricity 1 I road mm rats early element P f »and is usually in the m state m 1 of the machine access memory (DRAH) circuit _ case ασ car element pg and having 1 to 4 terminals π and "brake or" OR "% | free m eight η m. 1 is equivalent to the unitary array Circuit _ Case Pn, Pi, Pti i | η In the pattern area of the chair mold original M R. 2, the compartment is formed as a working mask, and the circuit pattern for m is recorded as 〇〇 単 元 Pr and becomes Electricity of the slice mark 丨. Road_ 窠 m Note P w In the TT mask original MR2, its circuit pattern units! Between t phase η &amp; isolated by the light-shielding 椁 S Α »form a pair of them 1 1 Alignment in the middle of the field clamp m. Note RA 1, R Λ 2 0 1 1 In the case of the first I: ⑴ S work model WR, WR 1 Case 1 1 -4 8-1 1 I 1 1

本紙張尺度適用中國國家榡準（CNS ) Λ4规枋（21〇K2&lt;mUM 4496 7 2 經滅部中央標卑局負工消费合作社印奴 Λ7 Η 7 五、發明説明（π ) 區域内的圖築P h , P f , P j · .是表示將第1 3㈤、⑹圖的掩 槔照版H R 1，M ti ϋ中的電路阖案Μ元P h , P f , P ,1 ...以1 / (Ϊ 倍（α是！，大於彳的整數，或大於1的半整數）所投影之 阔愧c义α旱以4 , ，或fi等大於1的整數，或大於1 之举數為理想，這棟情形時，第]3 (c)、⑼圖内的圖案P h ,μ f , P ,1 · . 是第1 3抖、&lt;h)丨圖的電路圖槩單元Mt , P f， P j ...之編小_馋。 存木例中，要餺诰Λ S I C或I. S I等的多晶榑少匿生産之裝 W時，首先科请典裝詈的窜路圖案点倍後的第1原版阖 案分別設計在圖像眘料丄。接舞，從這心第】原版圖案 中，袖出出互相禅闬的阖第所構成之多數電路匾，將這 典電路踔〇ί倍後的霄路圖宰翬元P a〜P e , p f〜P j , p r , p w 形成在障！案脊料丄後，將请典電路_薬單元P a〜P w纟目合 ，.以存丨圃宰資料L形成第1 3㈤、（b)圖的掩模原版H R〗，M R 2 之淖版|_案（第2原版圖案）。接转，在本例中，例如使 用雷射光東描寄裝置（或電子射線描軎裝置）將該第2原 版阔案描棗於由椅模材料及杭蝕劑所覆蓋的基板上，然 後經過顯像、蝕刻加工、杭蝕_剝離等作業後，製成第 1 3⑻、（h)阖的掩模原版Μ Ιϊ 1 , M R 2。 然棒，將撺桿原版H R1 , M R 2中的窜路圖築罱元屮之所 定|_赛投影影俛，各柄都使其在於所定關傺位置（丄述第 1增陴阃菜的位胃關傜）的，轉印於Τ作掩模W li , W ΙΠ .上 。有閼在牝轉印之際所使用的投影曝光裝置之概要，參 照第i 4 _説明丄c -4 9 - 本紙張尺度適用中國國家標準{ CNS ) Λ4ί)ί枋（2IOX2W公# ) (¾先閱讀背而之注意事項办4¾本Ή ) -丁 --° 竣！ 449672 Λ7 ΙΠ 五、發明説明) 第1 4圖是要從掩模原版丄，將所瓖擇的圖案之投影影 俾轉卬於T作掩模用基板上之投影曝光裝置，在此第14 _中；從小銀烚、氟氟（K r F )受激準分子雷射（波長2 4 fU 1») 、氬氣f Λ Τ' Μ受渑準分平爾射（波長1 fU η fli )、氟雷射（波長 1 ft 7 n b )等的光躲，啤釔鋁石楠石（Υ Α (ί)甯射的高諧波産生 鞋肯等的曝光光源1 ηι所射出之曝光光線π,,會經由複眼 诱鋳等的照度均勻化構件1 〇 2,將其照度分佈均匀化後， 浮由诱鏡1 (1 照射於調制盤（可變視界光阁）1 (M ^調製盤 1 » 4是配w存與曝光嵙兔的悚模阖像闹與軛之商上，而可 由照明系統捽制裝置1 0 s經介以驅動裝置1 0 4 a，設定調製 盤HI 4的開口形狀為仟意大小的矩形等，及，使其開口位置 在於仟意位晉之構成者。統轄控制其裝置特體動作的主 控制条統1〗8會對照明条統控制裝置1 fl 8指示調制盤1 0 4的 開口位置及形狀。由此，如其掩模是用第1 3㈣、㈦圖的 撺椁商版M R 1，N R 2時，可R對於所欲電路圖案單元P a〜P f 加以照明。又，牛：捽制集統1〗3也禽對照明条統控制裝置 指示嚜光光源1 (Π的發光時刻，及執行照明条統的照明條 件（通常照明、環形光帶照明、轡形照明等）及相關傜數 ((下悄丨的斟定悄之指定。 經滅部中央桴卑局只工消费合作社印^ &quot;先閲請背而之注总亊項再填朽本石) 線 裤渦調梨慇1 Μ開口 曝光光線II·會經過中繼透鏡1 0 5 -到凌光阁ί &lt;τ光阁Π tt Ώ光阁〗Ο β的配置而R要在對於 褅榑I國窠而的光學丨：之傅立藥轉換而（光障而}就可，因 而tk可將光圈1 η (；配黃在例如照度均勻化構件.1 〇 2的射出 商丨：。照明系統控制裝置〗η 8是依據設定在主控制条統 -50 - 本紙張尺度適用中國國家標準（CNS &gt; Λ4現枱（210χΜ·^&gt;ίί ) 經泸部中央標嗥局另工消费合作社印製 “9672 Λ1 ηη 五、發明説明（4?) 1 18的嗥光光線u之照明條件、及相關偽數u值）之條件 .設定讨鋅介屮驅動裝置1 fl (Wi變更光阁1 ()(;的形狀及大小 。鸿過光阁1 t) fi的曝光光線會經過聚光鏡1 Π 7 ,照明放 W存捽棹台1丨tU:的撺模（木例中是放置掩樽原版Μ ϋ 2 )中 的、閉缚萁轉印對柒電路_窠單元之照明區域ίϊ 2 ,(夔照 ^ 1 ί) Ν ) Λ 椅榉I帘版H R 2的透射光線冑由投影光學条統1〗3在作為 被曝米袪板的T作掩模WR闬基板5(!上形成由掩模原版2 丨所寧擇的電路H1案單元之投影倍收1 /«( α是1或大於 I的#數，或大於1的半整數）之圖像。在基板5 Π上的圖 窣區域.55(參照第15阐）上，形成有掩模材料，並塗布光 附劑苒器宑該掩模材料上。以下，在平行於投影光學条 統U 3的光軸A X次方向取Z軸，垂首於Z軸的平商内而 平行於第】4圖紙而的方向取X軸，垂言於第1 4 _紙而的 方向取Y _加以説明„ 此時，掩桿台1〗0是可向？ί方向、Y方向及旋轉方向移 _、以將掩槔脖版M R2定位。掎捍台U 0的位置是由_未 示的雷射干檸儀高精度的予以潮定，而依據其制定儐由 牛捽制糸統U Η控制掎模台1 1 I〕的動作^艾，在掩模原版 Μ丨；2的對准櫸記R yU , R A 2 { #照第〗3㈦|圖）上方，設置掩模 對準輿i徹鏡1 0 3 Λ， 1 Π 9 B ,掩模對準顯徹鏡1 G 9 A , 1 fl 9 B的 檢剷信號會供應於牛桦制条統Π 8 « 一方商，某板5 Π是由哀空趿住被保持在國未示的基板 保持器1:，該棊板保持器是固定在試件台1 1 4上，試件台 -S 1 - 本紙張尺度適用中國國家標隼（CNS ) Λ4ί)ί^( 210X2W公兌） (&quot;先間讀背而之注念事項再慎8本頁) --° -Γ f 449672 經潢部中决標準局只工消费合作社印¥ Λ7 B7五、發明説明（β) Π 4是闽定在）ί Y台1 1 fi上，試件台π 4是依據圖未示的自動 %焦檢潮器的檢潮結柒，以軸聚焦方式捽制基板5 0的 焦點位置（光軸A X方向之位置及傾斜角，以使棊板5 (] 表ifri和投销光學务统1 1 3的影作间為一致。又，XY台11(1 晕在某庫1 1 7 1:,例如以線件馬達方式將試件台1 1 4 (棊板 5 ίΠ在）（/ΐ向及Y方向定位。 由固定在試件台1 1 4上端部位的移動鏡1〗5 ra及舆其而對 紀背的雷射干擦搽I Η制定試件台U 4的X座檫、Y座標 W旋轉角，其測定俏胄供應於基板台控制条統1〗,及主 梓制糸統Η 3。祛板台捽制条統U 9會依楝其潮定值及主 桦制务統Π 8夾的捽制資訊，捽制X γ台1 1 〇的線件馬逹等 ,_:ν尚作。又，試件台1 1 4 J :阀定箸苺寧_紀構件F Μ I，而 存某準檫紀稱件F Μ〗上形成第〗5 _所示的，例如從其底而 以和曝光光線Π.相同波長段之照明光線所照射之二維基 準標記51 A，ίΠ R „ 又，第14阖的本例中，在其掎模台u η旁邊設置掩模庫 1 1 2 ,在掩模庫1 1 2内的可在Ζ方向移動自如的支承板11 2 a I.承载转掩模原販H R 1 , Ο 2 , M fU , Μ R 4。怛在第1 4圖中 ，第2 ；Μ掩模原版M R 2是被放置在掩模台u 0上。在這些 之中的掩楔原版M IU , H R 2是第]3㈤、⑹圖中的掩模原版 π掩楳車]1 2内的安承板11 2 a是在照明糸統捽制裝置〗〇 8 的捽制之下，可在7,方向的所欲位置移動，目. &gt; 在掩模 台U η和摘模庵1 ] 2之間，設置具轉動Q如而可在Z方向 所定箝圍柊動的托锊之掩榉裝鞀機1 1〗fl照明条統控制裝 -5 2 - (誚先閱讀背而之注态f項再填、ϊ5本頁 '1Τ 4 本紙張尺度適用中國國家標準（CNS ) Λ4規枋（210χ2&lt;^&gt;;!Μ 449672 經漭部中央標伞局员工消費合作社印聚 Λ7 ΙΠ五、發明説明（β )黃1 Π 8將撺樽庫1 1 2的支承板1 1 2 ft在Z方向之位置調整後 ，梓制摔掙裝載楝1丨丨的動作，而使其可在於掩模庫1 1 2 和撺模板1 H)之間，交接所欲掩樽原版H m〜Μ K 4之構成者。 父&gt; # 梓制条統U 8丨：，連接有磁盤裝置等之記億裝 靑Uh ,而在記憶裝置Π 8 a中儲存箸曝光資料文卷。曝 -W.咨料免件中記錄转掩模厣販M R.〗，Μ K 2中的各電路_案 單元之位貿關俱，及這些的投影圖像在工作掩模W 1Ϊ , W R 1 Φ，相方位_ _傜，和對準資訊等。 接转，説明對X作掩模W Ιί用基板5 (]的曝光程序之一例。 茌黾1 4阔Φ首先揷樽厣版M R1被放置在掩模台1丨〇上時 、苺苹櫸記構件F Μ 1的基準檫記51 Λ , f,丨R (棼照第U _ )之 中心宵移動到捋影光學年統Π 3的曝光區域之中心（光軸 Λ X )然後，由掩模對準顯撤鏡1 ft 9 A , ] () 9 B ,測定掩模原 版Η K1的對苹樣記R A 1 , R. Α ϋ之相對於蘇華標記5〗A , ΕΠ B之 位詈偏移邕，其一例是經介由掩模台U 0將摔模原版H R 1 對难於使其位置偏移緣大致成為對稱的，且為最小值之 位W。 接转，將調制盤1 » 4設定在只能照明到例如第1 3扣圖的 馆路！細蓽駡元P a β然後，柊動X Υ台U Π ,使電路圖案單元 P 的投影影像位臂在於第彳3 fc) _工作掩櫸W R丄的設計上 之位W後，丨ί開曝光光踔1 01中的快Η，或使雷射光源振 擻，以照叫雷路圈荜翬元丨&gt; a，將其阔案的投影影俛曝光 於甚板MU: n 接著，軍新設定調制盤1 (14，使其R能照明到電輅_案 一 f&gt; 3 - 本紙張尺度適用中國國家標隼（CNS ) /\4現格（210Χ29Ί公灯) (^先閱讀背而之注意事項洱填朽本頁 -訂 魄 449 6 7 2 經确部中决標嗥局只工消费合作社印聚 Λ7 )\η 五、發明説明（π ) 單元P h ,移動X Y台1〗Γ» .使電路圖案單元P b的投影影像位 晋在於T作掩模W上的設上之位1，再做曝光。以下同 搽的，依庠對掩樽鹿版M in丄的雷路圖案單元Pc, Pd做曝 光„ γ，依照電路圖案單元μ a〜p fi的阖菜是周期件圖案 或御立件圈案等之不同倩況t改脊照明條件（通常照明、 瑛躬光帶照明、等形照明、俏等）或曝光條件（投影 光學条統1 ) 3的數悄孔徑、皞光康，使某板5 η的表商在ζ 方向相對於役影光學革統〗1 3的-位之所謂柔性法之舱用 等）以使其最合滴化者為理想ρ例如在周期件阖案時是使 用堞形光帶照明，在御立忤_桨時並用柔件法等。 接鲜.使用具不同電路|国案單元群的掩模原販K R 2做曝 光^^第】4丨國的掎榉裝載機Η 1將掩模原版M R 1從掩模台1 1 fl l·郴判掩榑庫Η 2 ,並將掩模原版M R. 2搬入於掩模台1 ] 0上 β然後利用袼準標記構件F Η〗，及掩模對準顯微鏡1 0 9 A , 1 Π 9 B ,和撺榉庳販K RJ同揉，做掩模原版H R 2之對準工作。 於對準工作完了之後，將辋制盤1 fl 4設定在只能照明到 窜路丨i|案單元P f ,移_ X γ台〗丨（；，使電路阚案單元P f的投 锻影徇的位置在於T作掩模W R. 1:的設計之位置，而做曝 光。以K同樑的依序做撺槔原版M R 2 .1:的雷路撢1槩之曝光n 例如第1 5圖所示在褅榉阀販MR 2 _!.設定鬨嬈其電路圖案 帮元H h的照明辟域！ί 2時，由第1 :U?) !_可知，其在工作掩 椁W R丨.的窜路圖菜單元P h在設計L之投影位置有5處。 丙此，驅動第1 4圖的X Y台U Π ,如第】圖所示的將苺板5 (1 I-.的5處被曝光區域5 3A〜5 3 E依序移動到電路圖窠單元 -54- 本紙張尺度適用中菌國家標窣（CNS ) Λ4Μ^Μ 2Ι0Χ2&lt;Π公犮） (对先閱讀背而之注盘事項再填ΪΪ。本莨) '1Τ 線 經滅部中央標卑局员工消費合作社印聚 ί 449672 Λ7 H? 五、發明说明（ο ) p h的役影影像之位置，以進行曝光。又，在苺板5 0上的 ,將阈宰搵域5 ϋ在X方向夾於其間之2镔被曝光區域5 4 A ，M fl，言分別受到相常於撺模掉販M R 2中的對準標記之 窜路圓柒單元P r的影像之曝光，而在其鬨案區域fi 5内的 费-沂於被曝光辟域M R之區域，脅曝光掩模嗦版M R. 2中的 例如相博於….雒品Η檸記的電路阖窠Ρ ?^之_像„ 封是，屮調制稱1丨丨4所壤擇的掩模原販K Rl， H R 2上之各 電路阔案單元，祐不一定是完兮漢擇在各單元輪廓内的 阖案丄.而其曝光光線Π,會漏光到各®元輪廊周圍的寬 度〗Ki Μ稈度之可能忡因此，為了使其不産生漏光，在掩 槔嗦版M R 1 , M R 2上之各電路圖案鼠元之間，形成遮光模 f渡光帶）S Λ „ 經過上述曝光後，將唤布在萆板5 η上的光阳，劑顯像， 以所形成的杭蝕劑_案作為掩模，對苺板5 0上的鉻等之 蟑光睽辣刻加工（形成_菜），剝離抗蝕劑等，而完成第 Κί㈡阔的丁作掩模W R。在工作埯樺W R.上的電路阃案（由上 钵曝光所形成的案）_闕，ft保留遮光帶 &lt; 遮光膜）s A ，以防I卜使用在逐次移動式曝光裝置等丄時，由於調制 嗯的曝光光線之漏光而産生感光之情形β 因而，所使用的是if型光眧劑時，要形成丄述遮光帶 w s A的部分是不必做曝光，但，如果是負型光阻劑時，要 形成上述癣光帶W S A部分也要曝光。因此，使用負塱光阻 劑時，為了使遮光帶W S A權得有效率的曝光，而在掩模原 版Μ SI〜M R 4的仟一 Η 1:,預先形成由「長方形的開口」 -5 Γι - 本紙張尺度適用中國國家標準（CNS ) Λ4ί)ί^ ( 210X297公尨） (对先閲请背而之注意事項再姑巧本頁) -訂 /L 4 / w ί乙 Λ7 Η7 經漓部中央標隼局只工消费合作社印1i 五、發明説明（Μ ) 1 1 所 m 成 之 圖 m η 以 使 該 長 方 形 的 開 Π 之 影 像曝光 ，就 可 1 1 | 縮 曝 光 時 間 Λ 1 1 又 對 於 第 1 ；1 (d) 圖 部 分 的 Τ 作 掩 模 W R】， 也是將由掩模 I tL 1 版 Μ ], M R 2所 m 擇 的 電 路 圃 案 csn 里 7ϋ 之 投 影影像 .以 所 閲 i 1 w m 偽 曝 来 而 诰 〇 如 此 &gt; 由 於 口 ί 使用相 同掩 模 背 而 1 I 之 1 1 m 版 }\ fi 1 , H R2 以 m 诰 不 同 稗 類 的 X 作 掩 模WK， WR 1 , 因 Λ,· 1 rin 0]' 编 短 每 1 Η 工 作 掩 模 的 製 造 時 間 目. ，可更 減低 製 項 再 1 I m 成 木 0 填 本 1 4 I V Λ 仵 第 1 3阖 的 W 施 例 3 中 9 工 作 摘 模 W R , W R 1的圖案 Ιί 1 I ta /J.K t 片 掩 m 原 版 MR 1 , H R 2屮 所 選 擇 的 電 路圃案 單元 m 1 1 合 成 者 撺 m m 的 Η 數 不 m 定 於 2 Η , 而使 用 i I % 少 Η 都 口!. 以 r&gt; Γ7 -不 必 將 掩 模 原 版 丄: 的各電 路圖 案 訂 CKlI ~n^ 部 m 光 於 丁 作 撺 樽 WR或 wm . ：， R要從各掩模原販 1 中 m 擇 所 的 霜 路 m Ψ tnu m 元 m 曝 光 於 Τ 作掩模 WR , WR 1 1 1 丄 的 所 定 處 所 就 m Λ 1 I 又 第 1 4 _ 投 m 光 學 % 統 Η 3的投影令 ί數（〗/ « )是以將掩 1 1 模 版 Μ Κ 1 , M R 2上 的 圈 案 縮 小 到 可 投 m 於 工作掩 模WR 5 線 I W R. I J .的縮小倍數為理想。 其理由是在於投影光學糸統 1 1 11 3縮小轉印時， 可將在於掩模原版Μ R 1 M R 2上描蜜圖案 i 1 之 m &gt; 在 尺 寸 上 的 精 度 或 位 置 J: 的 精 度 所 産生的 不良 影 1 1 雜 m 小 到 其 m 小 倍 率 (1 / α )；&gt; 分 黾 者 〇 1 I 再 荇 如 丄 所 形 成 的 ]: 作 掩 模 WR ， w R〗内的- -部分中 1 1 tt 有 在 其 各 電 路 之 間 要 配 線 m 案 (第1 3 (c)阖中的配 1 I 線 阔 pm 而痦幽配線在各品揷之間會今然不同， -5 0- 因 1 1 1 1 1 I 本紙張尺度適用中國國家標準（CNS ) A4ML格（2】Ox29l：Mi ) 經漪部中央標嗥局只工消费合作杜印^ ^49672 Λ7 五、發明説明（κ) 而嬰採用從确用的掎模嗦販群中琛掙滴當的阔案來使用 之方法是有所困_。因此，透時候，也可使用雷射描寄 裝背或電+射線描害裝置等，將其配線國案等迫加描害 在T作掩榫的苺板上以對瞜之^因此，第1 4 _的投影曝 光裝w是具備這挿泊加描窠所欲圖案之描軎機構。 笔1 Π _是表示第】4圖投影曝光裝置的描棗機構，而此 第丨f; _中，是在投影光學条統ί U的旁邊附近設有霜射描 害機椹者。卽爾射光源I, Λ〗所射出的光束L m會綷由具電 光學元件笼的調制7Π件A Η〗，反射鏡1 21，及聚光透鏡， 而存1：作掩樺W R的难板5 0丄形成點光束„調制元件A Η〗的 一例楚將波克耳盒（P 〇 n k r U c㈧丨）和偏振鏡及檢偏鏡組合而 成之铕痒詾制元件，闹雳射光細：丨· A 1的振鑷畤刻，及調制 元件Μ 1的勒作楚由+:捽制条統〗1 8所控制。主捽制条統 Η Η是辫介由X υ台11 使蘇板5 η上的描棗區域在聚光透鏡 m的fF.下方移動，舶與其同步的，使爾射光源丨,A 1振盪 ，或使調制元件A Η〗調制，以變化光束I, R 1所形成的點光 束之強度，而可描棗所欲之ffi線圖案等。 在猜禅情形時，對於由投影光學条統1 1 3所轉印的掩模 脖版Η ΙΠ &gt; M R ίί内（价各電路_槩單元之柃影影像和由光束 丨,Η !所肜成的點光束之間的位胃阋怿必須加以举合，因而 存描束之前，最奸是例如利用苺率椁；紀構件Ρ Μ】，以測定 幽者夕間的位黃關倭„ 或考是，在投影光學条練1丨3的侧而，備詈例如圖像處 挥喂的對準檢潮器〗2 2 ,而由對準檢測器1 2 2消丨定從投影 -5 7 - 本紙張尺度適用中國國家標皁（CNS ) Λ4坭彳Μ 2ΙΟΧ2&lt;^&gt;^ ) 誚九閱τίηιΐ·而之.ii-意事項再填寫本石) 訂 線 4 49 6 7 2 Λ7 157 五、發明説明（仆） 誚先閲請背而之注4事項再填，Η本頁) 光粤备統1 U所轉印的掩模原販M m，M R 2各電躇圖菜單元 之投影Ρ1像本身的位置，而使點光束對準於該位置亦可 η萝檢潮各窜路|i丨柒單元的投影圖俛之位詈時，也可對 於其m像（存未顯像狀熊下的杭蝕劑感光部分之透光率或 析射寧之#化）淮行檢剧丨，或者是將某板5(1顯像後對顯像 後的某板再垵沾晋於曝光裝貿丄，以檢制凹凸的抗蝕劑 在各霜路_案翬元間需要配線丨_案的丁.作掩樽之數電： ，從整髅的Η數（2 0片稈度）看起來，只有3〜4 Η的程度 (對晞於後半段·金屬配線工稃之槠模）。因此，第〗fi圖的 描寄機磺是台上掃描型，而其描筈速度雖很慢，但用此 機構做雷射描棗所需之時間，H：起將所需片數的工作掩 模之某板今部曝光的時間為短，對於整體的生産能力之 影锲很少。但，襲使其雷射描軎高度的進行時，可採用 後讳第1 7 _所示的艏用光束掃描之雷射描棗裝置機構即 可η 線 經斌部中央標苹局只工消费合作社印裝 又，像這棟電路_案單元間的配線圖案之線寬度在一 舲h都|：h雷路圖窠單元内的國案為籾，用雷射描軎裝置 育接描寄時，存尺寸精度」：完全沒問題。 接箸-説明第1 ;彳⑼.，（b)圖的掩槔原販M R〗，M R 2製造方 法之一例„其掩桿原版Μ tM , M R 2的製造是可使用以往一 般所使用的雷射光束描害裝置、或電子射線描軎裝置等 的掩模描笫裝置Λ 第1 7 _是利用爾射光束的掩模描軎裝置（雷射光束描軎 -58- 本紙張尺度適用中國國家標皁（CNS ) ( 210X2W公处） 經Μ部中央標隼扃員工消費合作社印狀 M H7 五、發明説明（β ) 裝置}之一例，存眈第U阔中，掩模嗦販Μ R 1用的某板β Ο 是被保Ι_ ί在試件台1 :i 4丨：，試件台1 3 4是固定在？( Υ台U 0上 ,K fi 是在苺痄1 :Π丄對試件台1 34 (苺板（i (1)的二維方 向，和旋轉方向定位。試件台1 :i 4的彳、'/黃是由在試件台1 3 4 上的後勒鏡彳3 5 I«及輿其尚對配置的雳射干搔傜1 3 5所高精 棱的湖定，梓制裝W 13«依據其测定結果，捽制X Y台1 3 G 的定位勤作„ 乂，由雷射先賴！. A 2所射出的阖案形成用光束丨,B 2是經 過調制強度的調制元件A Μ 2及轉形光學条統1 3 0 ,受多角 鏡1 :Π的皮射後，由物鏡1 3 3在掩模原版Μ Κ1的基板6 β上形 成點光束。存莊板（ΗΊ丄被覆箸掩模材料，#在其上而塗 布有光陨_ Λ雷射光源1, Λ 2的振盪動作及調制元件A Η 2的 調制#作是由枰制裝胥1 3 8所梓制，枠制裝置1 3 8並介由 旋鞞曙_裝胃132使多角鏡〗3〗在其旋轉軸13l;i周_旋轉 ,丨tf丨時ft可使《存¥行於第1 7圖紙商的所定軸之周圍周 期忡的振_ π 梓制奘黃1 3 fi使多角鏡ί:Η在平商上移動，以使光東L Β 存於物鏡的視界内做平商上之掃描，並與其同步的、 調制其雷射光源丨,2戎其調制元件A Μ 2 ,就可描軎平面的 圖率。連接在捋制裝W 1 3 8的圖未示之磁盤裝置等之記憶 裝靑中，儲存箸所要描軎的各電路圖案單元Pa〜Pe的形 狀，W份贾關悔之描脔眘料，控制裝置138是依據其描軎 膂料，調制其雷射光源丨,/1 2或其調制元件A Μ 2，並使多角 鏡1 :Π旋轉，以在某板（Π) I:描棗各電路國案單元。但，只在 -5 9 - 本紙張尺度適用中國國家標牟（CNS ) Λ4規枯（210ΧΜ7公筇) 邻先閱讀背而之注盘事項#4筘本頁) -'訂 線 R 7 9 …一 Μ Η7 經潢部中央標準局只工消f合作社印繁 五、發明説明 (“ ) 1 1 物鋳 η :“『'!視界内， 其可楠毐的區域很狹， 丙而每當存各 1 1 η 界 内 的 描 m 了 後 ' 移 勒 &quot;台 1 ；ί -而在相郯接視界 1 1 間 將 圖 接 ? -- fM 做 描 案 〇 ifi 1 1 在 上 鍵 笫 後 &gt; ijm 過 顯 η 及 蝕 m 加 X &gt; r4r~J、 可 兀 成 掩 模 Μ 讀 1 m M k 1 » m 2 槠模庳版Μ R 1 也 同 揉 的 製 造 之 Q 背 而 i j 之 1 % j 形 成 掩 模 原 版 M ti 1 , Η R. 2的 圖 案 時 * 雖 妖 川、 也 可 以 用 /.? 1 窜 子 串 描 害 裝 但 1 在 _^ 般 上 ) 由 於 電 子 東 描 赉 裝 置 項 1 的 處 珲 能 力 比 霜 射 光 束 描 Φ 裝 腎 為 低 * 因 而 從 處 理 能 力 填 η 1 ί 本 f 點 ifn 旱 .以 如 的 使 用 雷 射 光 束 描 塞 裝 置 較 為 Τί 1 I 理 m 0 雷 射 光 束 描 窖 裝 置 在 微 網 阖 案 的 尺 寸 精 度 上 雖 1 1 η -f 荣 描 害 裝 w 為 差 η 如 (； 舲 ·&gt; 於 X 作 掩 模 W R的 曝 I I 光 際 ·&gt; 使 用 输 小 投 影 光 學 % 統 時 掩 模 原 版 H R 1 , HR2 訂 I 的 _j E£1 ΑίΤ 〇[ m 將 X 作 槠 模 WK的 m 窠 m 大 之 _ 案 因 而 l 其 W v| 1 的 精 度 m 求 也 of 緩 和 S R 寸 m 差 的 問 題 也 可 解 1 I 泱 1 | 接 m 説 明 使 用 丨―: 實 施 例 所 製 造 的 X 作 掩 模 WR » 由 1 1 投 m 光 ϋϋ m 將 所 定 電 路 _ 案 轉 印 於 半 導 體 晶 Μ 丄 » 以 線 | 半 m m 裝 詈 的 丁 稈 之 例 Ο 本 例 所 使 用 的 曝 光 裝 置 1 | 存 某 木 定 和 從 前 所 使 用 的 總 栝 曝 光 型 (逐次移動梨） * I 准 掃 描 方 式 m 的 掃 描 曝 光 型 之 编 小 投 影 型 曝 光 裝 置 1 I [π] 灼 〇 1 1 在 宵 旃 例 中 \ 也 和 莕 施 例 1 和 實 施 例 2 同 樣 S 曰 疋 使 1 1 用 第 ]L 阔 的 光 學 式 縮 小 投 影 m 曝 光 裝 1 » η 请 m 情 m 時 1 I 第 U: _ 中 的 掩 椁 π 丄 是 保 持 第 1 Η (C) 圖 的 工 作 掎 楔 WR 1 1 -(\ 0 - 1 f 1 1This paper size applies to China National Standards (CNS) Λ4 Regulations (21〇K2 &lt; mUM 4496 7 2 Ministry of Economic Affairs, Central Standards and Bureau of the Ministry of Work, Consumer Work Cooperative, Innu Λ7 Η 7 V. Maps in the area of the description of the invention (π) Building P h, P f, P j... Is the circuit scheme M element P h, P f, P, 1 ... It is projected as 1 / (Ϊ times (α is !, an integer greater than 彳, or a half integer greater than 1)) c meaning α is an integer greater than 1, such as 4, or fi, or a factor greater than 1. For the ideal case, in this case, the pattern Ph, μf, P, 1 in Fig. 3 (c), ⑼ is the circuit diagram 槩 unit Mt, P of Fig. 1 3 dither, &lt; h). f, P j ... edit small _ 馋. In the case of wood storage, if you want to use polycrystalline silicon such as Λ SIC or I. SI to seldom produce the package W, first of all, please specify the channel pattern of the package. The first original design after the double-click is designed with caution in the image. After dancing, from this original design, the majority of the circuit plaques composed of each other ’s meditations are sleeved out. The figure of the road after the time of 倍 〇ί times Zai Yuan Yuan P a ~ P e, pf ~ P j, pr , pw is formed in the barrier! After the case is completed, the circuit_ 薬 units P a to P w are combined to save the data L to form the original mask HR of Fig. 13 (b). 〖, The second version of the MR 2 | _ case (the second original pattern). Then, in this example, for example, the second original version is described by using a laser light east tracer (or an electron beam tracer). On the substrate covered with the chair mold material and the etchant, and then subjected to development, etching, and peeling, etc., the mask original plates 13th, (h), M1, 1 and MR were prepared. 2. Of course, the road map in the original H R1, MR 2 of the pole is set to the original position of the Yuan Yuan | _ Sai projection shadow, each handle is placed at the predetermined position (described in the first increase) The dishes are closed on the stomach) and transferred to the masks W li and W ΙΠ. For a summary of the projection exposure device used in the transfer, refer to i 4 _Explanation c- 4 9-This paper size applies the Chinese national standard {CNS) Λ4ί) ί 枋 (2IOX2W 公 #) (¾Read the precautions for the back first) Do 4¾Ή--Ding-° End! 449672 Λ7 ΙΠ V. Description of the invention) Figures 1 and 4 show the projection exposure of the selected pattern from the original mask, and the projection exposure device on the substrate for the mask. Medium; from small silver hafnium, fluoro-fluorine (K r F) excimer laser (wavelength 2 4 fU 1 »), argon f Λ Τ ′ Μ received quasi-fractional flat radiation (wavelength 1 fU η fli), Fluoride laser (wavelength 1 ft 7 nb) and other light sources, exposure to high-harmonic yttrium bauxite (Υ Α (ί) Ning radiation) produces light exposure light 1 η, exposure light π ,, will The illuminance uniformity member 1 〇2 is induced by compound eyes, and the illuminance distribution is uniformized. Then, the illuminator 1 (1 irradiates the modulation disc (variable field of vision) 1 (M ^ modulation disc 1 »4 is Equipped with w storage and exposure, the horror model of the rabbit looks like the quotient of the yoke, and the lighting system can be used to control the device 1 0 s to drive the device 1 0 4 a. Set the opening shape of the modulation plate HI 4 to be intentional. The size of the rectangle, etc., and its opening position lies in the intentional position of the constituents. The main control rule 1 which controls the special movement of its device 1〗 8 controls the lighting control device 1 fl 8 indicates the position and shape of the opening of the modulation disc 104. Therefore, if the mask is a commercial version MR1, NR2 of the third and third figures, the R can be used for the desired circuit pattern unit P a ~ P f illuminates. In addition, the cattle: system 1 indicates the lighting system control device to indicate the lighting time of the light source 1 (II), and the lighting conditions (normal lighting, circular light belt) to perform the lighting system. Lighting, square-shaped lighting, etc.) and related numbers ((the designation of the determination of the next quiet 丨 the Ministry of Economic Affairs and the Central Government Bureau of the Ministry of Economic Affairs only the consumer cooperatives printed ^ &quot; read the first note, please fill in the total items before filling)本本 石) The trousers vortex tune Yin Yin 1 M opening exposure light II · will pass through the relay lens 1 0 5-to Lingguang Pavilion ί &lt; τ 光 阁 Π tt Ώ 光 阁 〇 β configuration and R should be used for 褅榑 I State's Optics 丨: It is only necessary to convert the Fluoride to (light barrier), so tk can set the aperture 1 η (; for example, the emission quotient of the uniformity component .1 〇2) :. Lighting system control device η 8 is based on the setting in the main control system -50-This paper size applies Chinese national standards (CNS &gt; Λ44 台 (210χ · ^ &Gt; ίί) “9672 Λ1 ηη” printed by the Central Bureau of Standards of the Ministry of Economic Affairs and other consumer cooperatives. Conditions. Set the zinc drive unit 1 fl (Wi changes the shape and size of the lighthouse 1 () (; Hong Guoguangge 1 t) the exposure light of fi will pass through the condenser lens 1 Π 7 and the illumination will be stored in W Illumination area of the closed binding transfer circuit 窠 unit in the model of the platform 1 丨 tU: (in the wooden example, the original version M 樽 2), (夔 照 ^ 1 ί) Ν) Λ The transmitted light of the beech curtain I HR 2 is projected by the projection optical system 1 and the circuit W selected by the mask original 2 is formed on T as a mask WR on the exposed plate 3. The H1 projection unit receives an image of 1 / «(where α is a number of 1 or greater than I, or a half integer greater than 1). A masking material is formed on the substrate in the figure 窣 region .55 (refer to the explanation in Chapter 15), and a photo-adhesive device is coated on the masking material. In the following, the Z axis is taken in a direction parallel to the optical axis AX of the projection optical system U 3, and the X axis is perpendicular to the plane quotient of the Z axis and parallel to the drawing. _The direction of the paper is taken as Y _ for explanation. „At this time, the cover 1 can be moved to the direction?, Y, and the direction of rotation to position the cover M R2. 掎 卫 台 U 0 The position of the laser is determined by a laser dryer (not shown) with high accuracy, and according to it, the movement of the mold table 1 1 I] is controlled by the burdock, and the movement of the mold table 1 1 I is shown in the original mask M.丨; 2 alignment beech R yU, RA 2 {# 照 第 〖3㈦ | Picture), set the mask to the mirror 1 0 3 Λ, 1 Π 9 B, the mask to the clear mirror 1 G 9 A, 1 fl 9 B inspection shovel signal will be supplied to the cattle and birch system Π 8 «One party, a certain board 5 Π is held by a blank air and is held in a substrate holder not shown in the country 1 :, The cymbal plate holder is fixed on the test piece table 1 1 4 and the test piece table -S 1-This paper size is applicable to the Chinese national standard (CNS) Λ4ί) ί ^ (210X2W) (&quot; read back first (Notes on this page, please be careful on page 8)-° -Γ f 449672 Printed by the Consumer Standards Bureau of the Ministry of Internal Affairs only ¥ Λ7 B7 V. Description of the invention (β) Π 4 is Fujian) ί Y 1 1 fi, test piece π 4 is based on automatic% focus inspection not shown in the figure The tide detection of the tide device is completed, and the focus position of the substrate 50 (the position of the optical axis AX direction and the inclination angle) is controlled by the axis focusing method, so that the plate 5 () table ifri and the optical system 1 1 3 The shadows are consistent. In addition, XY stage 11 (1 halo in a certain library 1 1 7 1: For example, the test piece stage 1 1 4 (棊 板 5 ίΠ 在) by the wire motor method (/ （direction and Y direction Positioning: The moving mirror 1 fixed to the upper part of the test piece table 1 1 4 5 ra and the laser dry wipe against the back 背 I Η Develop the X-axis, Y-axis W rotation angle of the test piece table U 4 Its measurement is supplied to the base plate control system 1 and the main control system 3. The board control system U 9 will depend on its tide setting value and the main control system. The production information, the production line of the X γ platform 1 1 〇 Ma Yan, etc., _: ν Shang Zuo. Also, the test piece platform 1 1 4 J: valve set 箸 宁 ning_ji member F Μ I, and save a certain The 5th _ form of the quasi-biographical title piece F Μ is formed, for example, from the bottom and the Exposure light Π. Two-dimensional fiducial mark 51 A, ίΠ R „illuminated by illumination light of the same wavelength band, and in this example of the 14th, a mask library 1 1 2 is set next to its die stage u η, A support plate 11 2 a in the mask library 1 12 that can move freely in the Z direction I. It carries the original mask HR 1, Ο 2, M fU, MR 4.图 中 In Figure 14, Figure 2; the M mask original M R 2 is placed on the mask table u 0. Among these mask wedge originals M IU and HR 2 are the first and third mask masks in the figure below, and the mounting plate 11 2 a is a lighting system control device. Under the control of 8, it can be moved at the desired position in the 7, direction. &Gt; Between the mask table U η and the mold release] 1] 2, a pliers with a rotation Q can be set in the Z direction. The surrounding beech decoration machine 1 1〗 fl lighting control system-5 2-(read the note f below and then fill in, 5 pages on this page '1T 4 This paper size applies to China National Standards (CNS) Λ4 Regulations (210χ2 &lt; ^ &gt;! M 449672 Employees' Cooperatives of the Central Standard Umbrella Bureau of the Ministry of Economic Affairs of the People's Republic of China Printed Λ7 ΙΠ V. Description of the Invention (β) Yellow 1 Π 8 After the adjustment of the position of the support plate 1 1 2 ft in the Z direction, the azimuth moves to load 楝 1 丨 丨 so that it can lie between the mask library 1 1 2 and 撺 template 1H), and transfer the desired The constituents of the original Hm ~ MK 4 mask. Father &gt;# 梓 制 条 系 U 8 丨: The storage device Uh is connected with a storage device Uh, and the exposure data is stored in the memory device 8a Paper. Exposure-W. Information Free Record the mask vendor M R., the position of each circuit _ case unit in MG 2 and the projection images of these in the working mask W 1Ϊ, WR 1 Φ, phase orientation _ _ 傜, And alignment information, etc. Next, an example of an exposure procedure for the substrate 5 () used as a mask for XW1 will be described. First, a 4 × 1 plate M R1 is placed on the mask table 1 丨. At the time, the reference mark 51 Λ, f, 丨 R (棼 照 第 U _) of the berry apple frame member F Μ 1 moves to the center of the exposure area (optical axis Λ) X) Then, aim at the display mirror 1 ft 9 A,] () 9 B with the mask, and measure the original mask Η K1's pair of samples RA 1, R. Α 相对 with respect to the Suhua mark 5 〖A , An example of the position 詈 offset of ΕΠ B is that it is difficult to make the position deviation edge of the original mold HR 1 symmetrical through the mask table U 0 through the mask table U 0, and it is the minimum position W. Then Turn, set the modulation panel 1 »4 to the library road that can only be illuminated to, for example, the 13th picture! Finely curse the element P a β, and then move the X Υ 台 U Π to make the projected image position of the circuit pattern unit P The arm lies in 彳 3 fc) _ After counting the position W, turn on the fast light in the exposure light 1 01, or make the laser light source vibrate, so as to call the thunder circle circle element &gt; a, and expose the projection shadow of its wide case. Yu Qiban MU: n Next, the army newly set the modulation panel 1 (14 so that its R can illuminate the electric cable _ Case one f &gt; 3-This paper size applies to the Chinese national standard (CNS) / \ 4present grid (210 × 29Ί) (Public lamp) (^ Read the back-to-be-notices first. Fill out this page-Dingpo 449 6 7 2 The Ministry of Finance and the Ministry of Justice, the Bureau of Industrial and Commercial Cooperative Cooperative Printing Λ7) \ η V. Description of the Invention (π) Unit P h, move the XY stage 1 ΓΓ. The projection image position of the circuit pattern unit P b is set to the set position 1 on the T mask W, and then exposed. The following is the same, according to the exposure of the deer pattern unit Pc, Pd of the cover deer version M in 丄, γ, according to the circuit pattern unit μa ~ p fi, the amaranth is a periodic pattern or a royal stand, etc. Different conditions change the lighting conditions of the ridge (usually lighting, light strip lighting, isomorphic lighting, pretty, etc.) or the exposure conditions (projection optical system 1). The quotient of η in the ζ direction is relative to the Yageo Optical Leather System (13-position of the so-called flexible method, etc.) to make it the most suitable one. For example, it is used in the case of periodic parts. Shaped light band illumination, and the flexible method is used in the case of 忤 立 忤 桨. Freshness. Use the mask original KR 2 with different circuits | national case unit group to make exposure ^^ 第】 4 丨 Beech loader in China Η 1 Take the mask original MR 1 from the mask table 1 1 fl l · 郴 mask mask library 榑 2 and move the mask original MR 2 to the mask table 1] 0 and then mark the member F Η〗, and the mask alignment microscopes 10 9 A, 1 Π 9 B, and K RJ, together with the beech peddler K RJ, to do the alignment work of the original mask HR 2. After the alignment work is completed, The rim plate 1 fl 4 is set to be able to illuminate only the channel 丨 i | case unit P f, shift _ X γ stage〗 丨 (; so that the position of the projection unit of the circuit case unit P f lies in T as a cover W R. 1: the position of the design, and do the exposure. The sequence of K with the same beam as the original MR 2 .1: the exposure of Thunder Road 撢 1 槩 n For example, as shown in Figure 15 on 褅 zel Valve vendor MR 2 _ !. Sets up the circuit pattern to help the lighting of the element H h open up the field! 2 o'clock, from the 1st: U?)! _ It can be seen that it is working to hide the road map menu of WR 丨. There are 5 projection positions of the element Ph in the design L. Then, drive the XY stage U Π in Fig. 14 as shown in Fig. 5 to place the exposed area 5 of the raspberry board 5 (1 I-. 5) 3A ~ 5 3 E sequentially move to the circuit diagram unit -54- This paper size applies to the Chinese National Standards for bacteria (CNS) Λ4Μ ^ Μ 2Ι0χ2 &lt; Π 公 犮) (Please fill in the notes on the back of the disc first. This 莨) '1T line printed by the Consumers Cooperative of the Central Bureau of Standards and Bureau of the Ministry of Democracy 449 672 Λ7 H? V. Description of the invention (ο) The location of the service image of ph for exposure. Also, on the raspberry board 50 , The threshold slug field 5 ϋ is sandwiched between 2 in the X direction The exposed area 5 4 A, M fl, respectively, is exposed by the image of the channel round unit Pr, which is usually similar to the alignment mark in the die drop MR 2, and the area within the coax area fi 5 is exposed. Fei-Yi is exposed in the region MR. For example, in the exposure mask version M R. 2, it is related to .... 雒 品 雒 Η 记 的 电路 阖 窠 Ρ ^ 之 _ 像 „封 是 ， 屮The modulation is called the masks selected by the original vendor K Rl and HR 2, and the circuit units on the HR 2 are not necessarily completed by Han Han selected in the outline of each unit. And its exposure light Π , It will leak light to the width around each of the Yuan Yuan corridor. Therefore, in order to prevent it from leaking light, between the circuit pattern rat cells on the masked versions MR 1 and MR 2 After the above exposure, the light beam on the fascia plate 5 η will be visualized, and the formed photoresist will be used as a mask to the raspberry plate 50. The chrome and other cocks are lightly engraved (formed), and the resist is peeled off to complete the mask WR. The circuit case (case formed by exposure to the upper bowl) on the work frame W R. _ 阙, ft retains the light-shielding belt &lt; light-shielding film) s A in case I use it in a sequential mobile exposure device, etc. 丄In the case of light exposure due to the leakage of modulated exposure light β, therefore, if an if-type optical tincture is used, it is not necessary to perform exposure if the part of the light-shielding band ws A is formed, but if it is a negative type In the case of a photoresist, the WSA portion to form the ringworm light band is also exposed. Therefore, in the case of using a negative photoresist, in order to effectively expose the light-shielding tape WSA, the first mask of the mask M SI ~ MR 4 is formed in advance. A "rectangular opening" -5 Γι is formed in advance. -This paper size applies Chinese National Standards (CNS) Λ4ί) ί ^ (210X297) 对 (Notes for first reading please refer to this page, and then this page will be used) -Order / L 4 / w ί 乙 Λ7 Η7 The Central Bureau of Standards only prints 1i at the Consumer Cooperative. V. Invention Description (M) 1 1 The map m η is used to expose the image of the rectangular opening Π, and the exposure time Λ 1 1 can be reduced. Figure 1; 1 (d) T in the figure is used as the mask WR], which is also a projection image of 7 里 in the circuit case csn selected by the mask I tL 1 version M], MR 2. According to the reading i 1 wm Pseudo-exposure comes 如此 〇 so &gt; Because the mouth uses the same mask background but 1 I of 1 1 m version} \ fi 1, H R2 uses m 诰 different types of X as a mask WK, WR 1, because , · 1 rin 0] 'Shorten the manufacturing time of the working mask per 1Η. It can reduce the production item and 1 I m into wood. 0 Fill in 1 4 IV Λ 仵 No. 1 3 阖 W Example 3 9 The pattern of work release WR, WR 1 Ιί 1 I ta / JK t Sheet mask m Original MR 1, HR 2 屮 The selected circuit unit m 1 1 The number of 撺 mm of the synthesizer 定 mm is set to 2 Η However, the use of i I% is less than a mouth !. With r &gt; Γ7-it is not necessary to order each circuit pattern of the mask original 丄: CKlI ~ n ^ parts m only to Ding Zuo 撺 WR or wm.:, R shall be from The selected frost path m Ψ tnu m element m in each mask original vendor 1 is exposed to T as the mask WR, and the fixed position of WR 1 1 1 就 is m Λ 1 I and the first 4 _ cast m optical% system The projection order number of〗 3 (〗 / «) is to reduce the circle on the mask 1 1 template Μ Κ 1, MR 2 to a size that can be cast on the working mask WR 5 line IW R. IJ. ideal. The reason is that when the projection optical system 1 1 11 3 is reduced in size, it is possible to trace the m of the honey pattern i 1 on the mask original MR 1 MR 2 &gt; in terms of dimensional accuracy or position J: The resulting bad image 1 1 m is as small as its small magnification (1 / α); &gt; Divider 〇1 I is again formed as follows]: as the mask WR, w R--part In the case of 1 1 tt, there is a case of wiring m between its circuits (the 1 I line width pm in No. 1 3 (c)), and the quiet wiring will be different between products now, -5 0- Because 1 1 1 1 1 I This paper size is applicable to Chinese National Standard (CNS) A4ML grid (2) Ox29l: Mi) The Central Bureau of Standards of the Ministry of Economic Affairs only works for consumer cooperation Du Yin ^ ^ 49672 Λ7 V. Description of the invention (κ) However, it is difficult for babies to use the method of earning a lot of money from the real-life model clerk group Chen Chen. Therefore, you can also use laser tracing back or electric + ray tracing when it is transparent. Device, etc., and its wiring national case, etc., are described on the raspberry board with T as a concealer to confront it. Therefore, the projection of the first 4 _ The light device w is a tracing mechanism provided with the desired pattern of insertion and tracing. The pen 1 Π _ is a tracing mechanism of the projection exposure device shown in FIG. 4, and this 丨 f; _ is in projection optics There is a frost-ray scanner near the side of U. The beam L m emitted by the light source I, Λ will be modulated by the electrical optical element cage 7Π A Η〗, the mirror 1 21, and a condenser lens, and save 1: an example of a difficult plate to cover birch WR 5 0 丄 to form a point beam „modulation element A Η】 Chu Jiang Poker box (Ponkr U c㈧ 丨) and a polarizer and The tickling control element combined with the analyzer, the light emitted by the light is fine: the engraving of the vibrating tweezers of A 1 and the control of the modulation element M 1 are controlled by the +: control system 18. The main control system 条 Η is to move the tracing area on Su plate 5 η under the fF. Of the condenser lens through X υ platform 11 and synchronize the ship with it, so that A1 oscillates. Or modulate the modulation element A Η to change the intensity of the spot beam formed by the beams I, R 1, and to trace the desired line pattern of the date. When guessing the Zen situation, the projection light The masked version of the transfer mask 1 1 3 &rd; MR ίί (the circuit image of each circuit _ 槩 unit of the shadow image and the point beam formed by the beam 丨, Η!怿 must be combined, so before the description of the beam, for example, the most effective method is to use the berry rate 椁; the building block PM] to determine the position of the lonely person in the evening Huangguan 倭 Or test, in the projection optical bar practice 1 丨3, for example, the alignment moisture detector 2 2 that is fed at the image, and the alignment detector 1 2 2 eliminates the projection from projection 5 7-This paper scale is applicable to Chinese national standard soap ( CNS) Λ4 坭 彳 Μ 2ΙΟΧ2 &lt; ^ &gt; ^) 诮 九 读 τίηιΐ · And. Ii-Issue matters and then fill in this stone) Line 4 49 6 7 2 Λ7 157 5. Description of the invention (servant) 阅 Please read first Note 4 on the back, please fill in this page again. (This page) The original mask of the masks transferred by the Guangyue Beitong 1 U M m, MR 2 The position of the projection P1 image of each electric picture unit, so that the spot beam Aiming at this position, you can also check the position of each tide of the tide. When the position of the projection image of the unit is measured, the m-image (the transparent part of the etch resist under the undeveloped image is transparent) Photometric or analytical She Ningzhi # 化) Huai line inspection show, or a certain plate 5 (1 after the development of a certain plate after the development and exposure to the exposure equipment, in order to detect uneven resist in each Frost Road _ Cases need wiring between the cases 丨 _ Cases of Ding. As a cover of the bottle Electricity: From the number of the entire skeleton (20 pieces of stalk), it seems that there is only 3 to 4 degrees The second half of the mold (metal mold). Therefore, the profiler of the fi chart is a scanning type on the stage, and although its tracing speed is very slow, the time required for laser tracing with this mechanism is used for H, starting from the number of pieces required. The exposure time of a certain part of the mask is short, and it has little effect on the overall production capacity. However, when the height of the laser beam is measured, the laser beam scanning mechanism shown in Figure 17 below can be used to scan the laser beam. The machine can be used for consumption only Cooperatives are printed, and like this circuit, the width of the wiring pattern between the case units is 舲 hdu |: h The national case in the thunder road map unit is 籾. "Save dimensional accuracy": No problem at all.箸 -Explanation No. 1; 彳 ⑼., (B) of the masked original vendor MR】, an example of the manufacturing method of MR 2 „The masked original version Μ tM, MR 2 can be manufactured using conventional mines Masking device such as a beam tracing device or an electron ray tracing device Λ No. 17 _ is a mask tracing device using a laser beam (laser beam tracing -58-) This paper is applicable to China Standard Soap (CNS) (210X2W public office) Approved by the Consumer Standards of Employees Cooperative M H7 of the Ministry of Standards of the M. V. Example of the Invention (β) Device}, stored in the U U. A certain board β Ο is guaranteed Ι_ ί is on the test piece stand 1: i 4 丨:, is the test piece stand 1 3 4 fixed on? (Υ 台 U 0, K fi is on the berry 痄 1: Π 丄 pair Specimen stand 1 34 (two-dimensional orientation of the berry plate (i (1), and rotation direction positioning. Specimen stand 1: i 4 彳, '/ Yellow are mirrored on the specimen stand 1 3 4彳 3 5 I «and Yu Qishang's configuration of the blasting gun 1 5 5 high-precision edge lakes, Azusa W 13« According to the measurement results, XY stage 1 3 G positioning work is performed „ Hey, it ’s up to the laser !. A 2 from A 2 The forming beam 丨, B 2 is the modulation element A M 2 and the transformed optical system 1 3 0 of the modulation intensity. After being irradiated by the polygon mirror 1: Π, the objective lens 1 3 3 is applied to the mask original M K1. A spot beam is formed on the substrate 6 β. The Chuangzhuang plate (ΗΊ 丄 is coated with a 箸 mask material, # on which is coated with a photon _ Λ laser light source 1, Λ 2's oscillating operation and the modulation element A Η 2's modulation # The work is made by the decorative equipment 1 3 8 and the manufacturing device 1 3 8 and the rotary mirror _ charge stomach 132 makes the polygon mirror 〖3〗 in its rotation axis 13l; icircle_rotation, 丨 tf 丨When ft, the vibration of the period 存 around the fixed axis of the 17th drawing dealer can be saved. Π 奘 yellow 1 3 fi makes the polygon mirror ί: Η moves on the flat quotient to make Guangdong L Β Scan the flat quotient within the field of view of the objective lens, and synchronize with it to modulate its laser light source, and then modulate its modulation element A Μ 2 to trace the plane rate. Connected to the manufacturing equipment W 1 In a memory device such as a magnetic disk device (not shown in Fig. 8), the shape of each circuit pattern unit Pa ~ Pe to be described is stored. W Jia Jiaguan's description is careful, and the control device 138 is based on its description. Wei It is necessary to modulate its laser light source 丨, 12 or its modulation element A Μ 2 and rotate the polygon mirror 1: Π so as to trace the circuit case units on a certain board (Π) I: but only in -5 9-This paper size is applicable to Chinese National Standards (CNS) Λ4 gauge (210 × 77mm) Read the next note of the disc # 4 筘 This page) -'Order line R 7 9… One Μ Η7 Warp The Central Bureau of Standards of the Ministry of Decoration only eliminates the cooperative cooperatives and prints. V. Invention Description (") 1 1 鋳 鋳 ::" "! In the horizon, the area where it can be ridden is very narrow, and every time there is 1 1 η After the description in the circle is completed, 'Transfer &quot; Platform 1; ί-and connect the picture between the connected horizons 1 and 1?-FM as the description 〇ifi 1 1 After the up key &gt; ijm is too obvious η and etch m plus X &gt; r4r ~ J, can be used as a mask M to read 1 m M k 1 »m 2 The mold plate M R 1 is also the same as the Q of the manufacturing and 1% of ij to form a mask. When the original M ti 1, Η R. 2 pattern is used * Although you can use it, you can use /.? 1 The channel string traces the damage, but 1 is in general.) Because the processing capability of item 1 of the electronic tomography device is lower than that of frost beam Φ, it is lower for the kidney *, so fill in η 1 from the processing capacity. Compared with the use of the laser beam tracing device, the 1 1 laser beam tracing device is more accurate in terms of the dimensional accuracy of the microgrid case, although 1 1 η -f is less than η such that (;舲 &gt; Exposure II of WR with X as the mask &&gt; When using the small projection optical% system, the original HR 1 and HR2 of the mask will be _j E £ 1 ΑίΤ 〇 [m with X as the mold The W 的 m 窠 m big _ case therefore l the accuracy m of W v | 1 can also be solved to alleviate the problem of SR inch m difference 1 I 泱 1 | then m explain the use of 丨: X produced in the embodiment WR »Use 1 1 to cast m light ϋϋ m to transfer the given circuit _ scheme transfer For semiconductor crystals 丄 »Example of a small stalk with a line | half mm decoration 〇 Exposure device 1 used in this example | A certain type of exposure and the previous total exposure type (sequential moving pear) * I quasi-scanning Scanning exposure type editor small projection type exposure device 1 of the method m [I] 〇〇1 1 In the case of the example, it is the same as that of the embodiment 1 and the embodiment 2. S is used as the first embodiment. Optical reduction projection m exposure equipment 1 »η please m when m 1 1 I U: 的 in _ 丄 is to maintain the work of the 1st Η (C) diagram 掎 wedge WR 1 1-(\ 0-1 f 1 1

本紙張尺度適用中國國家標準（CNS &gt;/\4规格（210XML：MM A1 4 496 72 H7 五、發明説明（β ) ，以取代IT作掩槔：U „ 娣常在形成半埤體元件之際：需要在晶M w上經過2 0 多次（；3 ()多® )稈度的卍確軍凝，以形成電路圖案，而在 品Η «丨：的各怕攝區域内，具有在那以前由各工序所附 設的X軸晶Η檫紀及Υ軸晶Μ標記（均未圖示）。而由圖 米；τ:的對準檢潮器檢潮各品Η榜紀，求出已形成的電駱 _案位詈，由此以在各電路圖案丄，將工作掩模WR的圖 柒彰像[F.碚的爭耨曝光V ,晶片椁紀是在那以前的工 序中·例如相當於铕]3(c)阖丁作棉摘模W R内的_華P w之 丨铺萃被所鹌印者。 然挣、利用對准檢制器將品H W的各抬攝區域4 8定位 眈時，以某所定S ί菇線匿）倏fF其對苹結果„然後， 對丁作槠樽W R.的圖案匾域照射曝光光绵T U ,將阖槩區域 内的原版圖！薬以編小倍數1 Λθ ,所编小之影像曝光於怕 攝區域4 4 ^如眈將工作掩樽W R的縮小圖像曝光於晶H W上 的各枘攝顆域後',將品片W經過顯像、鈾刻加工等的程 序，以在晶H W上的各桕攝區域形成半導體裝置的某一 螨窜袼圖菜。 再者.如上掉的，半溥_積體電路等裝置的市場動向 窣朔荖A JU Γ.和丨,5U的，所謂名品禅；Φ鼠型之趨勢，因而 在半迨髀丁廠所牛睹的裝青品禅已愈來愈多。 為:+其#棺料今後裔嬰w背狩大的，被稱為「標率單元_ 夕Λ S H;屮，對於裝靑的每一品禪，都需要有對應於上述 的；ί ()多次曝光工稈用之掩槔。所謂標寧箪元是裝置製造 -f;卜 本紙張尺度適用中國國家標準{ CNS ) A4«L枯（2I0X297公灯) (-先閲請f而之：;&quot;念事項再填巧本贵) --=6 魄! 經滅部中央標本局Μ工消费合作社印製 ^4496 7 2 Λ7 Β7 經漓部中决標卑局只工消费合作社印聚 五、發明説明 ( ) 1 1 賴 栢 % 所 m 備 的 電 路 UD 早 元 (標準單元）， 由 裝 置 用 戶 仟 :«V_ 思 1 1 m 合 &gt; 以 設 計 電 路 的 典 型 A S I C * 而 要 選 用 那 ~* 禪— 電 路 nc» 卑 1 1 τη t=i zr 用 的 R 由 Ί 因 而 每 —. 品 m 的 X 作 掩 模 之 W! 案 gS? ^—V ifi 1 先 1 完 :不 同 m. 因 是 在 於 牝 〇 間 讀 1 I 常 然 對 摘 權 所 W 求 ft勺 R 'i. 枯 度 也 根 m 格 因 而 以 背 1 之 I ii 旱 需 m m 掊 度 似 m 能 力 低 的 電 子 束 描 m 裝 置 來 描 注 1 害 掩 模 Ψ 項 1 1 再 I 然 而 , 各 m 準 IJI^ 単 兀 本 身 的 圖 案 形 狀 是 不 *v6s Wv 其 品 释: 都 疋 填 1 本 J 的 ’ ϊίΐί 如 將 上 實 施 例 m 用 於 檫 準 卑 元 用 X 作 掩 Τ\ 1 I m 之 m ί® 時 si 將 槳 置 用 戶 所 要 m 擇 的 各 標 準 Μα Φ 元 本 身 1 1 it·} 圖 m (窜路_柒單元） 群 各 俩 都 η 先 形 成 在 掩 模 m 販 i 1 H If K Μ R 2等 而 依 其 每 品 m 從 這 itt 掩 模 原 版 HR 3 , 1 訂 ?,中羰出裝靑用戶所選擇的標準輩元（電 辂 圃 案 C3D 単 元 ), 1 將 其 轉 印 於 T 作 掎 模 WK &gt; WR 1等之棊板上卽可。 1 1 依 據 上 宵 施 例 時 * 可 將 以 往 對 於 各 品 揷 都 橱 別 的 以 1 I iff 早 束 描 棗 裝 置 描 棗 X 作 掩 模 的 原 m Μ 案 所 需 之 時 間 大 1 1 编 短 ·&gt; 而 可 大 m 的 縮 m 各 LJ ΠΠ 種 裝 置 開 # 所 需 之 時 間 崠 I Λ 1 為 r 製 造 Τ 作 槠 槔 ·&gt; 而 W 在 各 掩 m 原 m MR 1， Μ R 2 1 | s 描 害 W 路 宰 Μ 7Γ； 時 1 如 1: 的 t ft 可 使 用 高 處 理 能 I 1 )} 的 莆 射 描 奘 !Zil R -又 i 例 如 要 m 造 m 單 元 時 對 於 1 1 f串 m 版 Η !ί I ; Μ R 2 的 描 棗 是 在 裝 腎 製 造 廠 對 於 裝 置 用 1 1 戶 將 η η 作 椁 率 ΠΪ3 m 元 公 開 (接受訂貨）之 前 » 只 要 做 — 次 1 I 就 口 ί W ， 因 ffri 對 於 m 括 的 m 理 能 力 和 従 設 計 到 製 出 成 tj α口 1 1 的 時 間 之 影 等 於 有 D J 1 -Γ» 2 - 1 1 1 1 本紙張尺度適用中國國家榡隼（CNS ) Λ4^格（21〇ΧΜ7公垃） 4496 72 Λ7 H7 五、發明説明（h ) 常然，從掩模原版M R】，M R 2製造（曝光轉印）工作掩模 Μ I听喆的時間，伦是每Μ τ作掩模平均最#在1小時稃 度以丨、' 而要闞诰裝置製造用工作摔榉所需的時間也大 f的編特... V ,太例的T作掩模之闋造方法，站不限定於如上迷 的祐先鲈搏槠掛原版群，將其阔案内的一部分湊出轉甶 於T作褅樺的茶板之方法，&amp;可對於新品棒的毎一裝置 ，粘诰一部分或兮部的新掩模原版，而使用這典新掩模 嗦版製诰工作掩槔也伞無問題。以此方法，對於每一品 猙所不同的配線，可更柔件的對應之優點。 y ,如從槠掙原版H R 1， H K 2到工作掎模W R的縮小比率 太大時.弹將丨個電路圖察單元Pa, Pf等總括的形成在 1 Η掩撣淖版M R.丨，H R 2會有困難之情形，在這榑倩形時 ，常然如筲施例丨及宵栋例2所説明的，將其電路圔 築留元分割，描害存2 Μ以上的掎模原販上，而要轉印 到Τ作掩樽之際，將其各個接合以形成〗個電路圖案單 元。 經滅部中央標攀局另工消費合作社印^ 誚先閱讀背而之注意事項科硪艿本頁〕 線 ν4第1 4圖中，將掩模原版的阔案曝光於工作掩模w R 用某板所使用的曝光裝臂是總栝曝光型（逐次移動犁）之 柃影曝光裝置，m也可使用步進掃描方式等的掃描曝光 犁曝光裝黃以取代之。 再者，在l钵各w施例中，是將多數母_案的縮小圖 悚杯τ作蝻棹用择板」：接合，轉印於苺板上，而其各母 圖案縮小岡像所睜轉印的，在某板上之相郯接2個拍攝 -(；3 - 本紙張尺度適用中國國家標準（CNS } Λ4規格（2ΙΟΧ2&lt;ί7公片） 經确部中央標準局負工消贽合作社印紫 449672 Λ7 B7 五、發明説明（卜） 匾Μ之間的界線是以首猓為例者，但也可例如使其儘1 骈玲有將成在横跨於2楠衲攝匾域的圖菜之存在，而將 其界線部分形成為凹凸狀者„以這種倩形時，可將横跨 於2倘抬襁區Μ的_案，也即母_案编小圖像的建接部 分大_的減少，而可提高工作掩模的製造榷度。又，將 Ί.搁泊攝區诚界線部分不作為苜.線的曝光方法是在於例 如恃開平9 - ] Η (! 9 f; 2號公報及其對瞧的美國專利申諸 (i S / 7 U丨fi ί Φ諾Η期：1 9 9 7年1月9 R )中有所公佈，在 本件國際專利由品所指定的指定國&gt; 或所選擇的選擇國 夕關内法令所容許之下，模用上述公報及美國專利的公 佈内容，作為木文記$£之一部分„又，由上逑實施例3 〇ί ΐ!Ι ,雖然#碟板.丨：姑無形成蝻跨於其2翻拍攝區域的 圃樂之在在、即2個母圖案的縮小_像之間無連接部分 彳Π木發明中所表淖的是仍將分別鞞印於其2個拍攝區 域的毋圖案之縮小圃像接合者„因牝，本發明的槪念是 編小丨闺俛的併_並無關於其是否有連接部分，而將2値 母_案的縮小阃像柙郫接的轉印者。 又，在於要將摘模原版上的母圖案轉印於工作掩模用 苺板I:所使用的，光罩製造用投影曝光裝置（第2 _、第 1 4阔等）中，配置在照明光學条統内的光學稽分儀（均化 m ).也可以用棒形積分儀以替代複眼透鏡，或用複眼透 _和棒形榑分俱之搭配者„ y ,投影光學系統也可用只 屮多數析射光學元件所構成的祈射条統，只由多數反射 光學元件所構成的反射糸統，及由祈射光學元件和反射 -0 4 - 本紙張尺度通用中國國家標準（CNS ) /\4規枯（2彳0&gt;&lt;八7公坫） ----I _ _ _ ___4」ί I _ _ _ —l. \-.--------- -^― - I 、\=p (对先閱讀背而之注态事項孙硪巧本ΐίο 449 6 7 2 經淺部中决標卑局，Λ工消费合作社印製 Λ7 Η 7 五、發明説明（b〇 光學〒件所搭配的反射祈射条統之中的仟一择1反射祈 射犁的投影光學系統是可用其反射光學元件是至少A有 分光鏡及凹闹鏡的光學条統，其反射光學元件是不用分 光鏡而具凹商鏡和反射鏡的光學系統，及如美國專利第 ϋ 7 8 8 2 η號所公怖的，將名數祈射光學元件和2橱反射光 學元件Γ$ Φ其一是叫尚鏡）t配詈存不_曲的成一肓線 喊._光軸丨.：之光爭条統之中的仟一榑&lt;·,又t在木件國際 申諾所指定的指定闊，或所葆擇的選擇阈之國内法令所 容為之下，樓甲_阈軎利的公佈内容，作為本文記«之 -部分n 乂，丄钵W腌例中是用光圈等，以變更照明條件，即 存啤明光爭集統μ丨的傅__利j轉換而（光瞳商）上，變更曝 光光線的#庶分佈者，俏牝可例如將配置在曝光用光源 和光學椿分係之間的牵少j個光學元件移動，以在光學 積分係的人射而丨：，-Φ:照明光線的強度分佈之構成者 ο 乂 ·饱可在該牵少丨個光學元件的更靠光源側，再配 胃對雜形稜鏡 &lt; 展像鏡），而調整詼一對展像鏡的相關 於光軸方向之間隔，以在於光學穑分儀的入射而丄，可 將其照明光绚的強度分佈，礬孕為外側卜h中心部位為高 的墙ff;:光帶之摇成者Θ由此，如為複眼透鏡時就在其射 Hi制焦點ίίι .〖、，如為棒形繪分儀時就在於其射出商和掩 梅之問所設定的照明光學条統傅_ _ ___刹_„葉二轉換而丄，可變更 照明光線的強搀分佈，Η，可大幅的減低由於照明條件 的變ψ 引起的照明光線之光黾損失，而可維持高處理 -05- 本紙張尺度適用中國國家標準（CNS )以現枋（210Χ 297公处) UW1先閱讀背而之注念事項再填寫本I ) ，-° 丁 ' 449672 Λ7 li? 經漪部中央標卑局員工消费合作社印製 五、發明説明 (y^·) 1 1 能 力 fl 1 1 乂 &gt; 也 可 伊用 其曝 光 用 照 明 光線是 用雷 射等離子 光 源 1 1 k Mi (S fl R )所痒斗的軟X射線區域（波 長 Hi 1 L 1 5 〜 1 5 Π ΤΠ *：), 例如波長1 4 n ffl ,或 1 1 . !ί n m的超紫外 IV] 讀 1 I (=V )祀的柢影曝米裝ι 1 作為！： Η光填製诰用之曝光裝 而 1 I 之 1 1 Π Μ m 紫 外曝 光装 臂 中 y 萁 縮小投 影光 學条統R 是 由 注 I 事 1 % 數 Η (3 〜 π Η稈庠1 m 射 光 學元件 所偁 成之反射 % 統 項 再 1 I 1 而 η 其 母掩 模是 用 反 ¥ m 掩模者 0 填 1 i 本 I V * ΰΤ 分佈 m (B F Π )半導髏雷射或光纖雷射所 1 I m 的 紅 外 線匾 域或 可 見 區 域 -½ ΡΞ 之単一 波長 雷射，用 例 如 1 1 椟 雜 m &lt;或铒和鏡兩者） 的 光 m 放大器 放大 ,Η用非 線 性 ί 1 光 學 結 品 將 波長 變換 為 紫 外 光 的高諧 波， 以作為曝 光 用 1 訂 明 光 線 用r. 其一 例 Ξ 疋 使 單 一波長 雷射 的振盪波 長 在 ! 於 1 . 1 . Γί H /i H!範園内時， 可産生波長] 8 3 〜1 9 9 η m範圍 1 1 ϊΜ 的 8 倍 高 諧波 ,或 库 生 波 # 在⑴〜1 n ffi範園内 的 10 1 | 倍 高 波 之 輪出 o t 其 疋 使 振 懣波長 在1 ‘ 54 4 〜].5 5 3 μ. Hi 1 1 線 1 軺 W\ 内 時 ' 得19 3 - -1 94 Π H1 範園内 的《 倍高諧波 * m 和 氟 (A r F )专澉準分子雷射大戣同- -波畏的紫外光， 而 1 I 使 m W # 存i · 5 7〜 1 , Γ» 3 μ m範圍内時，可稱得1 5 7 1 1 1 5 8 η Hi範阐内的1 η倍高諧波， 即和氟（F 2 ) 雷射大致 同 一 1 | 波 畏 之 紫 外 光。 1 I Μ 使 闬 外（η 1) V )光或真空紫外（V U V )光等的 裝 置 1 1 m 诰 闬 持 m 嘬光 裝W 中 t 在 一 般上是 使用 透光型摘 模 ♦ 1 I 因 ffrt 1: it 各 宵施 例中 的 工 作 用 某板是 用石 英玻璃、 慘 雜 1 1 - R - \ 1 1 1 本紙張尺度適用中國®家標隼（CNS &gt; Λ4現抬（2】0Χ2^7公疗） 449672 Λ7 H7 五、發明説明（K) 氣的；Η单披璃.带石、氟化轉、或水晶等。又超紫外 ㈠:It V &gt;曝来裝背中，是使用斥射型掩模，而貼近方式的X 射線曝光裝W ,或掩樽役影方式的電子射線曝光裝置箅 中是使闲鴻光兕掩榨（榉板掩樺、暌Η掩模），因而其工 作槠掉.附祛板是用矽Η等。 V，將多數光學π件甜奘在鏡筒内的投影光學条統和 由多數光學元件（包含光學積分儀等）所構成的照明光學 条統中的牵Φ —部分是固定在機台上，而由配置在底板 1的a 3只或4只防蒺ffi之防磊裝置支承該機台。又， 在安W於該機台的蒂座上，配置苺板台，並將要配置掩 榉台的荜瘅阐定於設在上沐機台的機架丄。然後，分別 對照a职光學备統及投影光學糸统做光學丄的調整，舱在 由劣數_械零件所棋成的掩樽台和晶片台上，連接配線 和㈤转，Η ,做銳合調# (電氣調整_作確認等），由此 而坷鲈诰丨：钵光罩製造用的投影曝光裝置（第2 _，第1 4 阖WU /曝光裝W的製诰是在溫度《清淨度等都經過管 if的淨化宰内進行為理想ρ V.,常然木薛明祯不限定於L述寅施例，在不超出木 發明嬰旨範圍，可棵闬各禪各樣的構成。 經^部中央標準局員工消费合竹社印狀 (&quot;先閱讀&quot;而之注僉事項再填朽本石)This paper size applies to Chinese national standards (CNS &gt; / \ 4 specifications (210XML: MM A1 4 496 72 H7) 5. Description of invention (β) to replace IT as a cover: U „娣 often forms semi-corporeal components International: It is necessary to pass through more than 20 times (; 3 () more than) stalks on the crystal M w to form a circuit pattern, and in each of the feared areas of the product «丨: Before that, the X-axis crystal phase and the Y-axis crystal phase M mark attached to each process (both are not shown), and from Tumi; τ: the tide detection of the tide of each product by the tide detector, to find out The already-formed electric box is placed on each circuit pattern, so that the image of the working mask WR is highlighted [F. 碚 's contention exposure V, and the wafer age is in the previous process. For example, it is equivalent to 铕] 3 (c) 阖 for cotton picking WR in the cotton removal mold WR _ Hua P w 丨 shop is printed. Then, use the alignment tester to take up each area of the product HW 4 (8) When positioning the frame, the result of the pairing will be determined by a certain S line. Then, the pattern plaque field of Ding Zuo Cun W R. is exposed to light TU, and the original layout in the frame is exposed!薬 To make a small multiple of 1 Λθ , The edited small image is exposed in the fear area 4 4 ^ After the reduced image of the working mask WR is exposed to each of the photographic fields on the crystal HW ', the product W is developed and engraved. And other programs to form a mite scatter diagram of a semiconductor device in each of the photographed regions on the crystal HW. Furthermore, as mentioned above, the market trends of devices such as integrated circuits and integrated circuits are as follows: A JU Γ . And 丨, 5U, the so-called famous Zen; Φ mouse-shaped trend, so in the Pinting Dingchang factory has seen more and more pretend green Zen, more and more. For: + 其 #tunnal The big one is called "scaling unit _ Xi Λ SH; 屮, for each zen of decoration, you need to have a corresponding to the above; ί () multiple exposures to cover the work stalk. The so-called standard Ning箪 元 is device manufacturing -f; The paper size is applicable to Chinese national standard {CNS) A4 «L dry (2I0X297 public light) (-Please read f first and fill in the following: &quot; read the matter and fill in the expensive)- = 6 魄! Printed by the Ministry of Economics Central Bureau of Specimen Bureau M Engineering Consumer Cooperatives ^ 4496 7 2 Λ7 Β7 The Ministry of Foreign Affairs won the final bid of the Bureau of Industrial Cooperatives and Consumer Cooperatives. 5. Description of the invention () 1 1 The circuit UD early element (standard unit) prepared by Lai Bai% is provided by the user of the device: «V_ 思 1 1 m 合> To design a typical ASIC of the circuit * and choose that ~ * Zen — Circuit nc» 11 1 τη t = i zr uses R from Ί and therefore every — X of product m is used as a mask of W! GS? ^ —V ifi 1 finishes first: different m. Because it reads 1 between I and often However, for the decentralized office W, ft spoon R 'i. The degree of dryness is also m, so the electron beam tracing device with a low I, ii, mm, and m is required to describe 1 is harmful to the mask. 1 1 Re I However, the shape of the pattern of each quasi-IJI ^ is not * v6s Wv. Its description: are filled in 1 of this J's ϊ ΐ ΐ 如 As in the above embodiment m is used for quasi-Beiyuan with X as When masking τ \ 1 I m, si will set the paddles to each standard Mα Φ that the user wants Itself 1 1 it ·} Figure m (channel__unit) Each of the groups η is first formed on the mask m, i 1 H If K MR 2 and so on, according to each product m from this itt mask original HR 3 , 1 order, the standard generation (C3D unit) selected by the user of the China Carbon Fiber Decoration Co., Ltd., 1 It can be transferred to the T plate as the mold WK &gt; WR 1 and so on. 1 1 According to the example of the last night's example *, the time required for the original m Μ case that used the 1 I iff early beam drawing device to draw the date X as a mask for each product can be shortened by 1 1 &gt; The time required for each of the LJ and ΠΠ devices to be turned on can be as large as 制造 I Λ 1 for r to make 槠 槔. &gt; and W is m MR 1 and MR R 2 1 at each mask. s depicts W Luzai M 7Γ; at time 1, such as 1: t ft of the high-energy I 1}} can be used for mapping! Zil R-and i for example, for 1 1 f string m Edition Η! Ί I; The description of MR 2 was made before the Kidney Manufacturing Plant used 1 1 households to make η η as a rate ΠΪ3 m. Because of ffri, the time between the design of m and the physics capability of m and the time it takes to produce tj α1 1 1 is equal to DJ 1 -Γ »2-1 1 1 1 S) Λ4 ^ grid (21 × Μ7 male) 4496 72 Λ7 H7 V. Description of the invention (h) Often, from the mask original MR], MR 2 manufacturing (exposure transfer) working mask MI time Lun is the average of the mask per M τ # in 1 hour, and the time required for the device to be used to manufacture the device is also very large ... V, Tai T As a mask making method, the station is not limited to the method of hanging the original group of Yuxian perch as above, and a part of the wide case is transferred to the tea plate made of T. chrysanthemum, which can be used for new products. A great device that sticks a part of the original mask to the new mask, and using this new mask to make a mask can also work without problems. In this way, for different wiring of each product, the corresponding advantages of the flexible parts can be more flexible. y, for example, if the reduction ratio from the original HR 1, HR 2 to the working mode WR is too large, the circuit diagram inspection unit Pa, Pf, etc. are collectively formed at 1 Η cover version M R. 丨, HR 2 will have a difficult situation. In this case, the circuit is often divided into the elements as described in Example 丨 and Xiaodong Example 2 to describe the original model that is more than 2 μM. When it is to be transferred, it is to be transferred to T as a cover, and each of them is joined to form a circuit pattern unit. Printed by the Central Bureau of Standards and Construction of the Consumers ’Cooperatives ^ 阅读 Read the precautions section on the back 硪 艿 This page] Line ν4, Figure 14 Exposing the wide case of the original mask on the working mask w R The exposure arm used for a certain plate is a total exposure type (sequentially moving plow) shadow exposure device. M can also be used for scanning exposure plow exposure installation such as step scanning method to replace it. In addition, in each embodiment of the bowl, the reduction map of most mother cases is used as a selective plate ": the joint is transferred to the raspberry plate, and the mother pattern of each mother is reduced. When the transfer is opened, two shots will be taken on a certain board-(; 3-This paper size applies to the Chinese national standard (CNS) Λ4 specification (2ΙΟχ2 &lt; ί7 male films). Cooperative cooperative printing 449672 Λ7 B7 V. Description of the invention (b) The boundary between the plaques M is taken as an example, but it can also be made as far as possible. The existence of the picture, and the boundary part is formed into a concave and convex shape „In this qian shape, you can build a small image that spans 2 if the area M, that is, the mother_ The reduction of the connection part can increase the manufacturing mask of the work mask. In addition, the part of the boundary line of the parking area is not used as the clover. The exposure method of the line is, for example, 恃 Kaiping 9-] Η (! 9 f ; Publication No. 2 and its corresponding U.S. patent application (i S / 7 U 丨 fi Η Η Η 1: January 9, 1997 R) has been published, in this international patent by the product The designated country &gt; or the selected country of choice allows the use of the contents of the above-mentioned bulletin and the US patent as part of the wooden script, as permitted by the Kannai Act of the selected country ΐ! Ι, although # 盘 板. 丨: No formation 蝻 The garden that spans its two-fold shooting area exists, that is, the reduction of the two mother patterns _ there is no connection between the images 彳 Π shown in the invention What ’s missing is the pattern-reduced small-scale garden image splicer that will still be printed on its two shooting areas separately. Because of this, the idea of the present invention is to edit the little girl, and it does n’t matter whether it has a connected part, And the transferer who transfers the reduced image of 2 cases. Also, it is to transfer the mother pattern on the original mold release plate to the raspberry board for work mask I: used for photomask manufacturing In the projection exposure device (2nd, 14th, etc.), an optical inspector (homogenization m) arranged in the illumination optical system can also be used instead of a fly-eye lens or a fly-eye lens. _ Paired with a rod shape, y, the projection optical system can also be used with only a few reflection optical elements. System, reflecting system consisting only of most reflecting optical elements, and reflecting optical elements and reflection-0 4-This paper standard is in accordance with the Chinese National Standard (CNS) / \ 4 gauge (2 彳 0 &gt; &lt; eight (7 males) ---- I _ _ _ ___ 4 」ί I _ _ _ —l. \ -.----------^ ―-I, \ = p (back to first reading Matters needing attention Sun 硪 qiaoben οο 449 6 7 2 After winning the final bid, Λ7 合作 7 was printed by Λconsumer cooperatives. V. Description of the invention (b〇 Reflection reflection system with optical files The projection optical system of the 仟 1 optional reflection plow can be used. Its reflective optical element is an optical system with at least a beam splitter and a concave mirror. The reflective optical element is a concave quotient and a mirror without a beam splitter. Optical system, and as disclosed in U.S. Patent No. 7 8 8 2 η, the number of praying optical elements and 2 cabinet reflective optical elements Γ $ Φ (one is called Shang Mirror) t 詈The song of the song is shouting. 光 光轴 丨.: 仟 一 榑 in the light contention system &lt; ·, and t is specified in the wood international commitment, or the selected selection threshold Domestic law Below, the announcement content of Lou Jia_ Thousands of profit, as the note of this article «--part n 乂, in the case of 丄 bowl W pickle, the aperture is used to change the lighting conditions. In the case of (photon quotient), the # 庶 distribution of the exposure light can be changed. For example, the number of optical elements arranged between the exposure light source and the optical branch system can be moved to The person of the optical integration system shoots 丨:, -Φ: the constituent of the intensity distribution of the illumination light. 乂 · 乂 can be on the light source side with fewer 丨 optical elements, and then match the stomach to the irregular shape 稜鏡 &lt; Mirrors), and adjust the distance between a pair of Mirrors in the direction of the optical axis so that the incidence of the optical splitter can be used to distribute the intensity of its illumination light. Part of the wall is high ff ;: the light band shaker Θ Therefore, if it is a fly-eye lens, it will focus on the light system. 〖, If it is a rod-shaped plotter, it lies in its shooting quotient and cover The lighting optical system set by Mei Zhiwen is _ _ ___ Η, can greatly reduce the loss of ray light due to changes in lighting conditions ψ, and can maintain high processing-05- This paper size applies the Chinese National Standard (CNS) to 枋 (210X 297 public place) UW1 first Read the memorandum of the back and fill in this I),-° Ding '449672 Λ7 li? Printed by the Employees ’Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of invention (y ^ ·) 1 1 Ability fl 1 1 乂 & gt It can also be used for exposure. The exposure light is a soft X-ray area (wavelength Hi 1 L 1 5 ~ 1 5 Π ΤΠ * :) that is irritated with a laser plasma light source 1 1 k Mi (S fl R), for example Wavelength 1 4 n ffl, or 1 1.! Nm ultra-ultraviolet IV] Read 1 I (= V) sacrifice of rice exposure exposure 1 1! ： 1 I 1 1 1 Π Μ m UV exposure arm for the light-filling system. The reduction projection optical system R is determined by the note I. 1% number (3 ~ π Η 1 m Reflected by the optical element% system term 1 I 1 and η whose mother mask is filled with inverse ¥ m mask 0 filled 1 i this IV * ΰ distribution m (BF Π) semi-conductive laser or fiber Infrared plaque or visible area of the laser station 1 I m-a wavelength of ½ ρ, a wavelength of laser, amplified with an optical m amplifier such as 1 1 doped m &lt; or both a mirror and a mirror), non-linear 1 Optical junction converts the wavelength to high harmonics of ultraviolet light for exposure 1 Prescribed light r. An example Ξ 疋 Makes the oscillation wavelength of a single-wavelength laser at! 1. 1. Γί H / i H The wavelength can be generated when it is in the fan garden] 8 3 to 1 9 9 η m 8 times higher harmonics in 1 1 μM, or Kusheng wave # 10 1 in ⑴ ~ 1 n ffi fan garden Turn it out ot its oscillation wavelength is 1 '54 4 ～]. 5 5 3 μ. Hi 1 1 When the line 1 轺 W \ is inside, it is 19 3--1 94 Π H1 Fan Yuan's "Double Harmonics * m and fluorine (A r F) are specific to the excimer laser, which is different from UV light, and when 1 I makes m W # exist i · 5 7 ~ 1, Γ »3 μ m, It can be said that 1 5 7 1 1 1 5 8 η Hi harmonic harmonics of 1 η times, that is, the same as fluorine (F 2) laser 1 | 1 I Μ A device that uses external (η 1) V) light or vacuum ultraviolet (VUV) light, etc. 1 1 m holding m 嘬 light W W t generally uses a light-transmitting mold. ♦ 1 I ffrt 1: It uses quartz glass for the working plate in each of the examples. Miscellaneous 1 1-R-\ 1 1 1 This paper size applies to China® House Standard 隼 (CNS &gt; Λ4 is now lifted (2) 0 × 2 ^ 7 Public Therapy) 449672 Λ7 H7 V. Description of the Invention (K) Gas; ΗSingle glass. With stone, fluorinated, or crystal, etc. Ultra-violet ㈠: It V &gt; Repulsive masks, while close-type X-ray exposure equipment W, or mask-type electron-ray exposure equipment, are used to hide the leisurely light (beech board, birch, and mask), so Its work is eliminated. The attached board is made of silicon, etc. V, the projection optical system that sweetens most optical π pieces in the lens barrel and the illumination optical system composed of most optical components (including optical integrators, etc.) The part of the system is fixed on the machine, and it is installed by a 3 or 4 anti-tampering devices installed on the base plate 1. Support the machine. In addition, on the pedestal of the machine, a berry plate is arranged, and the 荜 瘅 that will be equipped with the beech table is set on the rack 设 provided on the upper machine. Then, respectively Perform optical adjustments according to the optical preparation system and projection optical system. The cabin is connected to the wiring platform and the wafer platform made of inferior mechanical parts, and the wiring and rotation are connected. (Electrical adjustment _ for confirmation, etc.), and thus 坷 的: projection exposure device for the production of bowl masks (No. 2 _, No. 1 4 阖 WU / exposure device W system is based on All of them pass through the purification of the tube if the ideal ρ V., Chang Ranmu Xue Mingxuan is not limited to the example of L Shuyin, and can be used in various constitutions of the Zen tree without exceeding the scope of the wooden invention. The Central Bureau of Standards staff consumes the seal of the Zhuzhu Society (&quot; Read first &quot; and note the matter before filling the stone)

(發叫之效果Ί 木發明是有關於利用光蝕刻枝術，以製造半導體積體 罱路罟徴邶装W之際，作為其厣版圖案所伊用的光罩之 鳟诰方法《裝胥，以及使用這樺光睪的裝置之製造方法。 依柹未轳叫的（第Κ 第^ 及第：i之）光罩製造方法者， -Π 7 - 本紙張尺度適用中國國家標準（CNS ) Λ4規枋（210X2W公垃） ^ 449672 經漪部中决標準局貝工消费合作社印策 A7 Η 7 ____ 五、發明説明（w ) 甘劣敷η段掩榉的各搁展I萃是轉印用_案所放大的阃窠 之-部分，因而，例如用霜子束描軎裝置或雷射光束描 芾裝背等，坷柄別以φ黾描寄資料，a以短時間描軎偏 差很小之阔窠P而目，母掩槔的描寮誤差會由其母掩模 阖硌的縮小倍數比例而縮小，因而，可高轺度的形成轉 卬用阔窠（嘹販岡案）„又因if匙母掩模一 α.製成後可以 (V裨使用，故要蚪诰多數片的該光堇時，也有可在短時 問内，以高精度形成各個嗦販圈案之厣點。 Γ,依搣永酵明的第2或第3之光罩製造方法者，其多 數Η捋褅桿的各储_案（或分割_案）是轉印用圖案或其 的大阔笔之-部分，不用説可在短時間内以小犏差鼠描 隶，Η由於秘多次曝光，其母撺槔圖案的描带誤差可由 多灰_光的次數份所平埝化，有可大大的減低其最後所 形成的光荜阔案（厝販圖案）之位置誤差和線寬度誤差等 ，而描高搞度之搀點。 而14 ,將母掩模阈案（或分割圖案）的编小圖像在光罩 (沟祛板L接合曝光時，&amp;坷縮小母掩模的圖案等描軎誤 苹，丙而.得以审高桔麻形成其原版_案。 V如《糾的多數η掙掩模_窠内的牵少丨組多數片母 槠樺阔寧谢其他所定1組的多數Η杻掩模圖案之分割方 法不柙iri丨時，或Μ糾的多數Η择t帝樽障ί窠内的至少1紐 冬數Η母掩樽_窠中，包含其他所定丨胡的多數片母掩 榉阔寧的捽合辟域時，屮於羿將泫母掩模圖窠影馋曝光 的投影光舉条統中，位於其曝光區域内不同位置的影像 -Γ» ^ - 本紙張尺度適用中囷國家榡準（CNS &gt;Λ4^拮（2〗〇Χ2&lt;?7公；(Μ 对九間讀背而之..11¾事項洱填，K本頁) -έ 4496 72 Λ7 H7 經&quot;-部中央標卑局負工消費合作社印聚 五、發明説明（π) 1 1 m 光 於 其 光 m 某 板 1. 的 同 一 位 置 » 故 其 投 影 光 學 % 統 1 1 1 m 因 曝 光 域 内 的 位 置 丄 的 關 俱 所 引 起 的 轉 印 線 1 1 m 睹 灼 勺 件 之 差 ί 在 平 均 化 效 果 被 減 低 〇 故 要 m 造 其 '—'-if! 1 I 尤 1 来 寧. m 所 用 的 投 影 m 光 裝 冒 之 成 m 特 件 ， 在 實 質 上 會 間 讀 1 φ 刟 m rF η Η 接 合 m 差 也 在 平 均 化 效 果 被 滅 低 〇 背 而 1 之 1 1 者 * 將 % 勒 Η W: 槠 模 m 的 编 小 圖 m 依 序 轉 印 於 注 1 I 某 .寿 尚 V, W m 光 W 的 用 徐 而 分 別 使 用 總 栝 m 光 ψ 項 再 1 1 m 小 桉 ¥ί m 光 裝 晋 9 或 掃 m 曝 光 m 的 縮 小 m m 填 % 1 1 本 m 光 裝 靑 時 m 因 m 其 用 途 預 先 修 iF. 母 掩 模 阈 案 的 % 1 I (it. 俛 特 η &gt; '以 柢 消 «ί 楨 料 萍 生 的 成 像 恃 性 之 hiQ 差 等 » 1 1 Μ 牝 πί 修 if 其 Pf m 料 的 成 像 特 杵 之 誤 差 0 ! 1 Itt 外 將 多 數 Η 母 掩 模 m 案 的 m 小 _ 悚 依 序 轉 印 於 基 訂 枷 # 之 m. ' 將 其 母 掩 模 圃 案 的 縮 小 圖 像 之 成 像 待 性 1 m 使 闬 η 光 m 的 投 影 曝 光 裝 置 之 投 影 光 學 % 統 的 非 1 I Β 轉 對 稱 m 差 與 失 m. 待 件 兩 項 中 之 牵 少 —· 項 ·&gt; 分 別 加 以 1 | fF. 時 ' 如 使 用 η 光 罩 的 投 影 光 學 % 統 木 身 所 定 之 成 像 1 1 特 忡 有 所 劣 化 畤 ' 11 可 將 其 成 像 特 件 做 實 镇 上 的 修 TF. » 線 w( W 口 ί 楞 其 # m W η 〇 1 I V 如 光 寧 ψ 被 使 闬 在 縮 小 投 m 時 * 和 r=* m 後 m 造 的 裝 1 I fr lw) 柑 ' Κ m： m 榉 m (或分割阖苹）的 倍 數 更 大 ! 1 * 丨大f ιίπ 描 樂 其 母 掩 m m 菜 的 電 子 束 描 蛮 裝 置 等 描 1 1 m- 説 的 銳 m 成 Φ； 小 » 而 得 以 ψ 高 辂 度 形 成 其 裝 置 1 1 IS1 ο 1 1 而 Η i 將 母 掩 m 阃 案 中 所 m 擇 的 圖 案 單 元 之 影 像 Μ 合 1 1 -G 9 - 1 1 1 1 本紙^尺度適用中家標準（CNS ) A4^L枯（210X297公ϋ ^ 496 72 經滅部中央標苹局負工消费合作社印聚 Λ 7 H? 五、發明説明Utf ) 轉印時，幾平不必使用雷射描棗裝置或電子射線描軎裝 背.rfn Wf在短時間製成各释各搽的光罩（T.作掩模）。從 而，宵有p丨將製造A S i C或集統L S ί等多品稍少1生産的 势W時所彳Φ用的光寧，存短時間内，以低成本製诰之優 th ,此外，由於坷在短時間内製造工作掩槔，所以也有 〇!涵fe A S丨（;等裝黃的開發時間之檸點。 义依據木#明的光罩製造裝置者，可*施本發明的光 阐之製造方法。 而Η ,苕依據本發明的裝置製造方法者，由於使用了 木發明的光罩製造方法，故可更高精度的形成裝置的圖 眈外、若鉍由战掩模的圖案中所撰搽的_案單元圖馋 .&gt;額合轉印，以製诰裝臂之方法者，有可將多品禪少氧 牛瘅的裝胥，在短時間内製造之椅點。 ί阖式夕簡單説明1 第〗圖傺本發明實枘例1的工作掩模（光罩）之製诰工 稃説明。 第2圖稱在第1鬨宵施例〗中，要製造其工作掩模時 所使用的光學式编小投彰咽曝光裝詈之部分剖商構成閻&lt; 第：i圇傜第2阖投影曝光裝置中，要對準掩模原版時 fft部分剖向荦要部位斜視_。 筚4圖侈第2圖投影曝光裝置中，要將掩模原版的母 曉丨柒编小圉像投影於某板4 h時之車要部位斜視國。 第「，⑻|_傺要使用宵施例所製造的工作掩模之投影曝光 -7 i)- 本紙張尺度適用中國國家標皁（CNS ) Λ4规格（210&gt;：2&lt;^公於） 1 _ _ .. I t^i ^^1 !1 _ _ -T」^ --! - - ίι ^^Ψ -·!— - - Ϊ- - n '--° (对先閱讀背而之注念事項再填巧本万) 4 4 9 6 7 2 Λ7 H7五、發明説明（π ) 裝貿中，其成像特件的誤差之一例圃。 第「&gt;&lt;b) _俗與衹消笔F，糾阃的成俛恃柙之誤差，而在工 作槠樟.丨：，對陆圈莬编小阔像的成像特件做修iF之方法Hi η 第！;的阔傜弹使闬宵施例所製诰的工作掩槙之投影曝光 裝W中，《成像待件的另一例丨_ » 第ii⑹_梅要柢消第（5料_的成像特件之誤差 &gt; 而在工 作撺槔h對（1：圖案編小圃像的成像特性做修正之方法圖。 第7 _偽太發明宵施例2的工作掩模（光罩）之製造工 梓説明|_ r· 筚《娣_偽W枸例中的一例之存於苺板4上曝光的第1 胡〖d_ N系縮小鬧拽之平向阔。 第8 (h)阖傜爭褥於笔3糾圖丄曝光的第：i Μ母圃案縮小inil r* ,-V 'τ· ΐΐί ^ 第！ Η :«國俱審御例中的另一钾之在於苺板4丄曝光的第 !糾f#阔窣縮小躅侏之平商罔。 第9H國俗軍餐於第9⑶圖上曝光的第2組母_案縮小Is!佝.&gt; -'p. m _。 (邻先閱讀背而之注&amp;事項孙&quot;,&quot;本石〔 -訂 -線！ 經漪部中决標卑局貝工消费合作社印&quot;(Effects of tweeting) The invention of the wood is about the trout method of the photomask used as a mask for the fabrication of a semiconductor integrated circuit package W using photolithography. , And the manufacturing method of the device using this birch light. According to the method of making the photomask according to the unspoken (No. K # and No.i),-7-This paper standard applies to the Chinese National Standard (CNS) Λ4 Regulations (210X2W public waste) ^ 449672 Jingyi Ministry of Standards, Bureau of Standardization, Shellfish Consumer Cooperatives, Printing Policy A7 Η 7 ____ V. Description of the Invention (w) The various exhibitions of the beetle η segmentation cover are transfer Use the minus part of the _ case to enlarge, so for example, using a frost beam tracing device or a laser beam to trace the back, etc., do not use φ to describe the data, a a short time to describe the deviation For small and large projects, the description error of the mother mask will be reduced by the reduction ratio of its mother mask. Therefore, it is possible to form a high-quality transformation camera (Sakaioka case). And because the if key mother mask a. It can be used after production (V), so when you want to pick up the majority of the photo cord, you can also ask in a short time. , To form the point of each hawker circle case with high accuracy. Γ, according to the 2nd or 3rd mask manufacturing method of Yongzhanming, the majority of each store _ case (or division _ case) ) Is a part of the transfer pattern or its large-scale work. Needless to say, it can be traced by a small mouse in a short time. Because of multiple exposures, the error of the banding of its mother's pattern can be as gray as possible. The flattening of the number of times of the light can greatly reduce the position error and line width error of the final light pattern (the hawker pattern) formed by it, and describe the point of the high degree of accuracy. 14, The small image of the master mask threshold (or segmentation pattern) was mistakenly described in the mask (during the exposure of the groove mask L, the pattern of the master mask was reduced, etc.). Hemp forms its original version. V such as "the majority of the correction η earns the mask _ 少 the small number within the group 丨 the majority of the film mother 槠 Hua Kuan rather thanks to the other set of the majority group Η 杻 mask pattern segmentation method is not iri丨, or the majority of the M Η choose t at least 1 New Year's number in the 樽 障 Η Η 掩 窠 窠 窠 ， ， ，, including the other majority 丨 Hu 片 胡 阔 宁In the field of image integration, in the projection light system that exposes the mother mask image, the images located at different positions within its exposure area -Γ »^-This paper scale is applicable to the countries of China Standard (CNS &gt; Λ4 ^ （(2) 〇 × 2 &lt;? 7 males; (M is read in the back of the nine .. 11 ¾ Matters to fill in, K page)-4496 72 Λ7 H7 Warp &quot; -Ministry Central Printed by the Standards and Consumer Products Cooperative V. Explanation of invention (π) 1 1 m Light on its light m The same position of a certain board 1. Therefore, its projection optics% system 1 1 1 m depends on the position in the exposure domain. The transfer line caused by the 1 1 m difference between the burning spoon and the averaging effect is reduced. Therefore, it is necessary to make it '—'- if! 1 I You 1 Laining. The projection light used is m It becomes a special feature of m. In fact, it reads 1 φ 刟 m rF η Η The difference of the joint m is also reduced by the average effect. However, 1 to 1 1 *% will be reduced. W: The editor of m Small picture m Sequentially transferred to Note 1 I. Shou Shang V, W m light W use Xu and use the total 栝 m light ψ terms and then 1 1 m small eucalyptus ¥ 光 light installation Jin 9 or sweep m exposure m reduction mm fill % 1 1 This m is pre-repaired with iF due to its use. The percentage of the master mask threshold% 1 I (it. hiQ difference »1 1 Μ 牝 πί The error of the imaging of the Pf m material is 0! 1 Itt will be transferred to the m of the base mask # in the majority of cases . 'The imaging tolerance of the reduced image of its mother mask is 1 m, so that the projection optics of the projection exposure device of 闬 η light m is not uniform 1 I Β the symmetry of the difference m and the loss m. Minorities in the matter— · item · &gt; When adding 1 | fF. Respectively, 'as the projection optics using the η mask% Tomu's imaging 1 1 unique The deteriorated 畤 '11 can be used to repair the imaging features of the real town. »线 w (W 口 ί 其 其 # m W η 〇1 IV Such as Guangning ψ is used to reduce the size of the investment m and * = * m mm 的 装 1 I fr lw) tangerine 'κ m: m beech m (or split 阖 Apple) is a larger multiple! 1 * 丨 large f ιίπ electron beam scanning The device etc. depicts 1 1 m- said sharp m becomes Φ; small »to form its device 1 1 IS1 ο 1 1 and Η i masks the image of the selected pattern unit m in the case m. Combined 1 1 -G 9-1 1 1 1 This paper ^ size is applicable to the Chinese Standard (CNS) A4 ^ L (210X297 gong ^ 496 72) Printed by the Central Bureau of Standards and Consumers ’Cooperatives of the Ministry of Economics and Ink Λ 7 H? 5 Description of the invention Utf) When transferring, Jiping does not need to use a laser tracing device or electron ray tracing to mount the back. Rfn Wf creates a mask (T. as a mask) for each release in a short time. As a result, there will be a small amount of production, such as AS i C or Jitong LS ί, which will be used in the production of less than 1 production time, and it will be used in a short period of time to produce low-cost products. Since 坷 manufactures work masks in a short period of time, there is also a point of development time such as 装 fe AS 丨 (; and other development time for the installation of yellow.) The light mask manufacturing device according to the meaning of wood # 明, can apply the invention The manufacturing method of the optical device. However, since the device manufacturing method according to the present invention uses the photomask manufacturing method of the invention, it is possible to form the device with a higher accuracy. The _case unit picture 搽 written in the pattern. &Gt; The method of making a total amount to transfer arms to make an arm, there is a chair that can be made of multi-product Zen and low-oxygen burdock in a short time. Brief Description of the Schematic Diagram 1 The first diagram illustrates the manufacturing process of the working mask (photomask) of the first embodiment of the present invention. The second diagram is that in the first nightmare embodiment, it is to be manufactured. Part of the profiler of the optical exposure system used in the work mask for masking and exposing the pharynx exposure device &lt; No .: i 囵 傜 No. 2 阖 projection exposure device, When the original mask is aligned, the fft part is cut to the main part and squinted. 筚 In the projection exposure device of Fig. 4 and Fig. 2, the mother image of the original mask is projected on a plate for 4 h. The main part of the car is squinting at the country. Section ", ⑻ | _ 傺 To use the projection exposure of the working mask made by the Xiao example -7 i)-This paper size applies to the Chinese National Standard Soap (CNS) Λ4 specification (210 &gt;: 2 &lt; ^ Public in) 1 _ _ .. I t ^ i ^^ 1! 1 _ _ -T 」^-!--Ίι ^^ Ψ-·!-----N '-° (yes First read the back of the note and then fill in the book) 4 4 9 6 7 2 Λ7 H7 V. Description of the invention (π) An example of the error of its imaging features in the assembly trade. Article "&gt; &lt; b) _Vulgarity and only write F, correct the errors of the 俛 恃 柙, and work at the camphor. 丨: Repair the imaging features of the small and wide image edited by Lu Quan The method of Hi η No.!; The projectile exposure of the work mask made by the Xiao Xie Example is used in the project exposure equipment, "Another Example of Imaging Objects 丨 _» 第 ii⑹_ 梅 要 消 第 第 5 The error of the imaging feature of the material _> At work 撺 槔 h, (1: The method of correcting the imaging characteristics of the patterned small image. Figure 7 _ The work mask of the pseudo-Taiwan invention Example 2 (light The description of the manufacturer of the mask) | _ r · 筚 "娣 _ Pseudo-W 枸 example is the 1st hu d_N exposed on the raspberry board 4 〖d_ N is to reduce the horizontal width of the drag. The 8th (h ) 阖 傜 褥 笔 褥 笔 笔 3 3 3 丄 丄 Exposure of the first: i Μ mother nursery case reduction inil r *, -V 'τ · ΐΐί ^ No! Η: «Another potassium in the country's trial is in the berries The 4th exposed #! 纠 f # 窣 丄 窣 窣 窣 躅 躅 之 平 平 罔 罔 躅. The 9th national custom military meal on the 9th group of pictures exposed in the second group of mother _ case reduction Is! 佝. &Gt; -'p. M _. (Neighbor first read the back note &amp; Matters Sun &quot;, &quot; Ben Shi [-Order-Line! Jing Yi Peel Board in awarding HIGHLAND consumer cooperatives printed &quot;

第；Hc&gt;俱^ \ (b)圖，爭#曝光後的_像之部分放大圖 萨役影光學条统的曝光匾域内之不同位置 的#瞟光於同一位置，就可減低失宾的镐形之 ;;V 叫阔 &lt;·.. 荦11抖圖傳育蚱例的再一例之在於葙板4上曝光的第 翊Μ阔革縮+ _俾之平商圖。 -7 1 - 本紙張尺度適用中國國家栳淳·（ CNS ) ( 210ΧΜ7*ΐί.'_} 4 496 72 ΑΊ Η 7 五、發明説明（) 第1 1⑹Ιϋ傷审#於箪〗1⑶国上曝光的第2紐母圖案縮 小丨_ (¾之平商圈。 笔12 _偽嬰將宵跑例中所製造的工作掩模之圖俛投影 於品H k所用的投影曝光奘置之重要部位斜視圖。 第1 ;ί _搽木發明的第；i宵施例，树是第1掩模原版平 由i阔：⑹杲第；i褅槔嗦版平面圖，㈡是第1工作掩模平 ifi m , W是第2 T:作掩模部份平商圖n 笋1 4 _偽第〗3丨a| W施例所使用的投影曝光裝置構成國。 锗1 5丨圍恪在第2 _投影曝光裝置中，要將所定電路圖 磋羅η:轉Φ於祛板時之审要部位斜視_ 第]f;圈偁存锗z圖投影曝光裝詈中所設W的描畜機稱 之一例構成_ c 第1 7圖偽描寄掩模原販Μ ΪΠ的圖案所用的雷射光束描軎 奘W 2概略構成 經消部中央標卑局Κ工消f合作社印製 本紙張尺度適用中國國家標準（CNS &gt;，\4規枋（210&gt;&lt;2叩公釔） /1 ΛΟ 〇 * *&gt;«&gt; « Λ 7 Η 7 五、發明説明（7〖） 經滅部中央標準局另工消资合作社印^ 鬼考 符號之 説明1 1… ..眧明 光學集統 1… ..撺榉 台 .. ..投戥 光學务统 4... .祛板 ..μ件 G ,… .·铒枳 台ί ΧΥ台） Ί .… ..每皞 8.-1 -.S't Τ-桿儀 8 m , 8 tri m y * ….移動鏡 L… ..Ψ w 制集統 10.. π 控制条統 11., 裝置 12.,. ,.镇樓 標記構件 1 ;ΓΑ . 1 3 Η ... ..茶準檫記 14 1 1 4 Β _ . ..對苹檢測器 ]ft… ...對难 信號處押条統 If;,· ...椅樺 庫 Γ7 . f ..…本坫 板 18.. ...滑勒 裝冓 m ...槠模 裳斜’機 2.丨）… , . _ 薬 m μ 1 1 A , 川Κ… --對苹椁紀 2 Z A , 2 2 ΙΪ ... ..反射鏡 -73- 誚尤闊讀背而之注念事項存咕寫本茛) 線 本紙張尺度適用中國國家標準（CNS ) Λ4规枋（210X297公犛) 413672 經滅部中央標外局员工消於合作社印繁 Λ7 H7 五、發明説明（p) K3.....對準檢測器 2 4 A，H 4 B.....對準檫記 2 5.....鬪案區域 2 &lt;i , 2 (i Λ . ίί fi Η , 2 i) C , 2 (ί Ρ 投影「_ 像 2 7 .…..鹿版_柒（光覃阖菜） Z 7 W .....…編小圖俾 28.....理想影像 ..…投影影俛 3!).....理想影像 3 1.....投影彰像 .....設計上的抬攝匾域 Λ.....投影影俾 3 4.....工作掩模（光罩） 3 Fi.....電路國築 :Μΐ , . . . ·母_案（放大_察） 3 7 ·..…理想影像的中心 /U .. A X丨.....光軸 I (.....曝光光線 A 1〜A N . . . . ·母圖案 P 1〜P N.....母圖菜 Λ Η〜Λ ί N.....縮小圖俛 Η ί 1〜Β [ Ν.....縮小圖像 C I〗〜Τ Ν.....縮小圖像 Γ i 1〜tM Ν . · . . ·縮小_像 -7 4 - 本紙張尺度適用t國國家標準（CNS ) Λ4规梢（2IOX297公片） &quot;尤閲讀背而之注&amp;事項典填朽本頁) l·訂 線！ 4 49 6 7 2 Λ/ n? 五、發明説明（74 ) M R 1，M R 2.....掩樺嗦版 (Ϊ 1〜0 Ν .....掎挥原販 Κ;〜ίί Ν.....褅樺庳版 P a〜 Μ..... 電 路 Ιϋ 案 ties 雄 I1 r . .,..對準 阖 案 P w .. ……品片 m Π? HI 案 R A 1 , · !ί Α2 … 對 準 標 S1〜 S Ν..... 柏 攝 1™ 域 S A… .·…遮光 模 W S A . ....漉光模 WR K T 作 掩 模 W… .-β Μ 第1 2 Μ 板 樟 對域窠 一區國 一 窠販 βιιι原 像 圖. \ 縮 ---- ---------η ---丁 _I _ I I I *_ 发 · i 刼' (¾尤閱讀背而之注意事項再填寫本頁) 經Μ部中央標準局貝工消费合作社印鉍 掩 ΐ 4, 光台 影 件-4Ϊ試以 器 檢統 模對學 鏡 勒 移 本紙張尺度適用中國國家標準（CNS ) Λ4^枋（210Χ?97公筇) 449672 Λ7 Η 7 五、發明説明（Μ ) 第 阔 記 件樺 構灌 記祛域 0 .. ^ 準：攝 m H- ^No. Hc> ^^ (b) Figures, part of the image after exposure # Enlarged image of Sa Yingying optical stripe in different positions within the exposure plaque field # 瞟 光 at the same position, you can reduce the number of guests The shape of the pickaxe; V is called 阔 .. 荦 11 is another example of the breeding of grasshoppers. It is the 翊 M wide leather shrinkage + _ 俾 quotient map exposed on the cymbal plate 4. -7 1-This paper size applies to China's National Chunchun (CNS) (210 × 7 * 7ί .'_) 4 496 72 ΑΊ Η 7 V. Description of the invention () Article 1 1⑹Ιϋ 伤 评 # 于 箪〗 1⑶ The second icon pattern is reduced 丨 _ (¾ of the flat business circle. Pen 12 _ Puppet Infant Illustrates the work mask made in the example of the night run, projected on the projection exposure used by the product H k 1st; __The first invention of Tochigi; i. Example, the tree is the original mask of the first mask Ping You: ⑹ 杲; the plan view of the i 褅 槔 嗦 version, ㈡ is the first working mask ping m , W is the second T: as the mask part of the quotient diagram n shoot 1 4 _ pseudo number 〖3 丨 a | The projection exposure device used in the W example constitutes the country. Germanium 1 5 丨 the range is in the second _ projection In the exposure device, the predetermined circuit diagram is to be compared. 斜: 斜 is shifted to the important part of the board when the board is removed. Straight-line] f; circle; germanium z map projection exposure device set in the projection exposure device. _ c Figure 17 The laser beam tracing W 2 used to falsely trace the pattern of the original mask of the masker M ΪΠ. The outline of the paper is printed by the Central Standards Bureau of the Ministry of Consumer Affairs, K Gong Xiao F Cooperative, and the paper dimensions are applicable to Chinese national standards. (CNS &gt;, \ 4 gauge (210) &lt; 2 yttrium yttrium) / 1 ΛΟ 〇 * * &gt; «&gt;« Λ 7 Η 7 V. Description of the invention (7 〖) The Central Bureau of Standards of the Ministry of Economic Affairs has eliminated the work Cooperatives printed ^ Explanation of ghost test symbols 1 1... 眧 明光 集集 1 ... .. 撺 木 台 台 .. .. 投 戥 光 务 系 4 .... · 铒 枳 台 ί ΧΥ 台) Ί .. .. each 8 .-- 1 -.S't Τ-rod meter 8 m, 8 tri my *… .moving mirror L… ..Ψ w system 10. . π control system 11., device 12.,.,., town hall marking member 1; ΓΑ. 1 3 Η ... .. tea quasi note 14 1 1 4 Β _ .. for Ping Detector] ft … ... difficulty signal betting system If;, ... chair chair Γ7. F ........ this fascia board 18.… slip Le installation 冓 ... 2. 丨) ...,. _ 薬 m μ 1 1 A, Chuan K ...-Notes on the Pingji Period 2 ZA, 2 2 ΙΪ ... Canggu script buttercup) The paper size of the paper is applicable to Chinese National Standards (CNS) Λ4 Regulations (210X297) 413672 Employees of the Central Bureau of Standardization of the Ministry of Economic Affairs and Consumers disappeared at the cooperatives Yinfan Λ7 H7 V. Invention theory Ming (p) K3 ..... alignment detector 2 4 A, H 4 B ..... alignment note 2 5 ..... case area 2 &lt; i, 2 (i Λ. ίί fi Η, 2 i) C, 2 (ί Ρ Projection "_ Like 2 7.... 鹿 版 _ 柒 (光 秦 阖 菜) Z 7 W ........ Edit small picture 俾 28 ... ..Ideal image ..... projection shadow 俛 3!) ..... ideal image 3 1 ..... projection image ...俾 3 4 ..... Working mask (mask) 3 Fi ..... Circuit country building: Μΐ,... · Mother_case (zoom_inspection) 3 7 · ..... the center of the ideal image / U .. AX 丨 ..... optical axis I (..... exposure light A 1 ~ AN.... · Mother pattern P 1 ～ P N ..... mother picture Λ Η ~ Λ ί N ..... Reduce image 俛 Η 1 ～ Β [Ν ..... Reduce image CI〗 ～ Τ Ν ..... Reduce image Γ i 1 ～ tM Ν. ·.. · Reduce _ 像 -7 4-This paper size is applicable to the national standard (CNS) Λ4 gauge (2IOX297 male film) &quot; You should read the note to the back &amp; Matters to complete this page) l · Order! 4 49 6 7 2 Λ / n? V. Description of the invention (74) MR 1, MR 2 ..... cover birch 嗦 version (Ϊ 1 ~ 0 Ν ..... 掎..... 褅 Hua 庳 version P a ~ Μ ..... Circuit I 案 case ties male I1 r... .. alignment case P w .. ...... product m Π? HI case RA 1, · Ί Α2… Alignment marks S1 ~ S Ν ...... Bossie 1 ™ domain SA… ..… Shading mode WSA... 漉 Optical mode WR KT as mask W… .-β Μ 第1 2 Μ Preliminaries of Banzhang on the territory of the first district of the country, one of the country's first sellers. \ Contract ---- --------- η --- 丁 _I _ III * _ Fat · i 刼 ' (Please read this note for further details and then fill out this page.) After being printed by the Central Bureau of Standards of the Ministry of Standards and Technology, the Consumer Cooperative of India, the bismuth mask was printed. Applicable to China National Standard (CNS) Λ4 ^ 枋 (210 ×? 97) 筇 449672 Λ7 Η 7 V. Description of the invention (M) The first record of the birch structure of the birch structure 0 .. ^ Standard: Photo m H- ^

線 光 軸光 光曝H 苺 曝照透調 件 構 化 源勻 光均 光摩· 鏡 % 制 W 裝 動 顒 鏡 透 P 阁 屮光 置 裝 動 驅 置 裝 制 梓 統 鏡集 光明 聚照 誚先閱讀背而之ii-意事項丹功寫本P'Linear axis light exposure H Raspberry exposure Transparency structured structured source Uniform light homogeneity · Uniform lens uniformity W Mirror movement W Mirror movement P Mirror light installation drive drive system Mirror light collection 聚First read the back ii- Italian matter Dan Gong P P

'1T 經步-部中央楛肀局只工消费合竹社印¾ 鏡 微 顯 準 對 模 掩 機 0 4Π0 庫 模槔模 掎撺撺 板 Μ &quot; 學 光 ί\ 舉 投 本紙張尺度適用中國國家標莩（CNS ) 格（2!0乂297公釔） 449672 Λ7 Η 7 經步-部中央標珞局兵工消赍合作社印製 五、發明説明（&lt;) ]1 4.....试件台 115.....错射干換儀 U ft si.....移動鏡 1 1 (ΐ . . . . . X Y fi 117.....择喏 1 1 Η.....丰桦制系統 1 ! 8 a.....記憶裝W 119.....某板台梓制糸統 Λ X.....光軸KM t.....莊孕梓紀構件 1 !......曝光光線M m〜Μ ϋ 4.....掩楔嗦販 W R.....工作掩樽 W, 1 5 N Γ.Π.....聃板 s I A , h 1 Si.....苺準標記 ϋ ίί.....照明區域 :i Λ〜Κ.....被嗶光區域 Μ Λ . 5 4».....被曝光區域 S5.....阚卒匾域 Η) 9 A ' 1 (Ht Β.....掩樽對準顯檝鏡 i 1 ：i.....投影光學条統 1 1 4.....試件台 -7 7 - 本紙張尺度適用中國國家標準&lt; CNS ) Λ4規枋&lt; 2丨〇&gt;： 2&lt;^&gt;兑&gt; 誚先間讀背而之注念事項搏功托本頁) 、\=° 449672 Λ7 ΙΠ 五、發明説明（ 經斌部中央橾瑋局只工消费合作社印聚 5 ffi… ...柊動鏡 •光軸 1… ..基準檫記 構件 .曝光光猓 '1…、 .-撺樺原版 .μ .i .....電路_秦單元 1 , R Αϋ.....對準檫記 .遮光_ .I作撺模 1 (ϊ圖 .基板 .. ..投影光學 条統 4… ..式件台 5,,. ..雷射干擬 搽 r) B1 -- .·.移動鏡 (i… ..X玲 7… ..基座 8… ..丰梓制条 统 R… ..搗板台梓 制条統 (K… ..聚光鏡 ..反射鏡 Z…· ..對準檢制 器 1 ... .1調制元件 1… ..雷射光源 -78- (誚先間讀背而之注意事項4填寫本V2c'1T Jingbu-Ministry's Central Government Bureau only consumes and prints from the Hezhu Society ¾ Mirror micro-display quasi-die masking machine 0 4Π0 Kumo die mold plate M &quot; Xueguang ί \ Paper size for China National Standards (CNS) grid (2! 0 乂 297g yttrium) 449672 Λ7 经 7 Printed by the Ministry of Military Standards and Cooperatives of the Ministry of Standards, Ministry of Industry, China, 5. Description of invention (&lt;)] 1 4 .... .Test stand 115 ..... wrong shot dry changer U ft si ..... moving mirror 1 1 (ΐ.... XY fi 117 ..... select 喏 1 1 Η .... .Fenghua system 1! 8 a ..... memory pack W 119 ..... A certain plate platform system Λ X ..... Optical axis KM t ..... Zhuang Yunzi Element 1! ... exposure light M m ~ M ϋ 4 ..... concealing wedges W R ..... work concealing bottles W, 1 5 N Γ.Π ..... 聃Plate s IA, h 1 Si ..... berry quasi-marking ϋ ίί ..... lighting area: i Λ ~ Κ ..... beeped area Μ Λ. 5 4 »..... Exposure area S5 ..... (Pu plaque field) 9 A '1 (Ht Β ..... Hopper is aligned with display mirror i 1: i ..... projection optical system 1 1 4. .... TEST TABLE-7 7-This paper size applies to Chinese National Standards &lt; CNS) Λ4 Regulations &lt; 2 丨 〇 &gt;: 2 &lt; ^ &gt; / &gt; Read the memorandum of attention and write down this page), \ = ° 449672 Λ7 ΙΠ V. Description of the invention 1… .. reference recording component. Exposure light 猓 '1…, .- 撺 Birch original. Μ .i ..... Circuit _ 秦 unit 1, R Αϋ ..... alignment recording. Shading_ .I as the mold 1 (figure. Substrate... Projection optical system 4... Stage 5 ,,... Laser dry pseudo-r) B1-... Moving mirror (i ... .X Ling 7… .. Base 8… .. Fengzi system R… .. Tamping table system (K… .. Condenser .. Reflector Z… .. Alignment control unit 1 .... 1 Modulation Element 1 ... ..Laser Light Source -78- (Read the notes beforehand 4Fill in this V2c

,1T 本紙張尺度適用中國國家椋準（CNS ) Λ4規枯（210Χ 2&lt;Π公筇） 449672五、發明説明（77) OJ J-ir0 束准 光某 件 榉 掩 第 lii 共， 統 糸¥ 光鏡 形角 m多 軸 轉 旋 旋物試 m 置 裝 動 驅 轉 儀 搀 台干 鏡件射. 鏡 勒 柊 經滅部中央標卑局员工消费合作社印掣 置件源 版 裝元光 原 台座制制射束樽 XYis捽調雷光掩 本紙张尺度適用中國國家樓JiMCNS &gt; Λ4現格（2丨OX297公释), 1T This paper size is applicable to China National Standards (CNS) Λ4 gauge (210 × 2 &lt; Π 公 筇) 449672 V. Description of the invention (77) OJ J-ir0 Light-mirror-shaped angle m Multi-axis rotation and rotating object test m Installed driving drive instrument gantry dry mirror shot. Mirror Lejing Ministry of Economic Affairs Central Standards and Bureau Bureau employee consumer cooperative printed parts source version installed Yuanguang original pedestal Beam Bottle XYis 捽 Lightning Mask This paper is suitable for China National Building JiMCNS &gt; Λ4 (2 丨 OX297)

Claims (1)

甥餚委員明示，本案#正後是否變更原實質内容 經濟部智慧財產局員工消費合作社印製 Α8 Β8 C8 D8 六、申請專利範圍 第87121685號「光罩製造方法及裝匱，以及裝置的製造方 法」專利案 (89年3月17日修正） 申請專利範圍： 1. 一種光罩製造方法，其係在形成有轉印用圖案的光罩 之製造方法中，其特徵爲： 將上述轉印用圖案放大的圖案，分割爲多數片的母 掩模圖案， 在上述光罩用的基板表面，將多數片上述母掩模圖 案的縮小圖像分別在上述基板上錯開，依序轉印者。 2. —種光罩製造方法，其係在形成有轉印用圖案的光罩 之製造方法中，其特徵爲； 將上述轉印用圖案或其放大的豳案，分別分割爲Μ組 (Μ是2以上的整數）的多數片母掩模之圖案， 在上述光罩用的基板表面，將上述Μ組的多數片母掩 模圖案的圖像，依序重叠而轉印者。 3. 如申請專利範圍第2項之光罩製造方法，其中上述Μ 組的多數片母掩模圖案是將上述轉印用圖案或其放大 的圖案，互以相同排列分割之多數圖案者。 4. 如申請專利範圍第2項之光罩製造方法，其中上述Μ 組的多數片母掩模圖案中的至少1組多數片母掩模圖 案爲，和其他所定1組的多數片母掩模圖案其分割方 本紙張尺度速用中國國家標準（CNS ) A4規格（210X25»7公釐） ---------1------訂-------it (請先閲讀背面之注意事項再填寫本頁) 於 443 6The members of the cuisine committee stated clearly whether the original content of this case # is to change the original substance printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A8 B8 C8 D8 "Patent Case (Amended on March 17, 89) Patent Application Scope: 1. A method of manufacturing a photomask, which is a method of manufacturing a photomask with a pattern for transfer, characterized in that: The enlarged pattern is divided into a plurality of mother mask patterns. On the substrate surface of the photomask, the reduced images of the plurality of mother mask patterns are staggered on the substrate and sequentially transferred. 2. A method for manufacturing a photomask, which is a method for manufacturing a photomask having a pattern for transfer, characterized in that the above-mentioned pattern for transfer or an enlarged version thereof is divided into M groups (M It is an integer of 2 or more). On the surface of the substrate for the photomask, the images of the plurality of master masks of the M group are sequentially superimposed and transferred. 3. For the method for manufacturing a photomask according to item 2 of the scope of the patent application, wherein the majority of the master mask patterns of the M group are those in which the above-mentioned transfer pattern or an enlarged pattern thereof are divided in the same arrangement with each other. 4. The method for manufacturing a photomask according to item 2 of the scope of patent application, wherein at least one group of the plurality of mother mask patterns in the above-mentioned group M of the plurality of mother mask patterns is, and the other plurality of mother masks of a predetermined group The pattern and its cut-out size of the paper are quickly adopted the Chinese National Standard (CNS) A4 specification (210X25 »7 mm) --------- 1 ------ order ------- it ( (Please read the notes on the back before filling out this page) on 443 6 經濟部智慧財產局員工消費合作社印製 法互異者。 5. 如申請專利範圍第4項之光罩製造方法，其中上述Μ組 的多數片母掩模圖案中的至少1組多數片母掩模圖案， 含有其他所定的多數片母掩模圖案之接合區域者。 6. —種光罩製造方法，其係在具裝置圖案的光罩之製造 方法中，其特徵爲： 將上述裝置圖案作分割放大圖案的多數分割圖案之一 個縮小圖像轉印於掩模基板上，而將和該一圖案至少有 一部分是同一圖案的另一分割圖案之縮小圖像，使其同 一部分能重#般轉印於上述掩模基板上者。 7. 如申請專利範圍第6項之光罩製造方法，其中上述多 數分割圖案是分別以光束被曝光的同時，且其縮小圖 像是被接合轉印於上述掩模基板上者》 8. 如申請專利範圔第1項至第7項中任一項之光罩製造 方法，其中將多數片的上述母掩模圖案之縮小圖像， 依序轉印於上述基板表面之際，即因應上述光罩的用 途而分別使用總括曝光型的縮小投影型曝光裝置、或 掃描曝光型的縮小投影型曝光裝置者。 9. 如申請專利範圍第1項至第7項中任一項之光罩製造 方法，其中將多數片的上述母掩模圖案之縮小圖像， 依序轉印於上述基板表面之際*即因應用使用上述光 罩的投影曝光裝置中之投影光學系統的，非旋轉對稱 本纸張尺度逍用中國0家標準（CNS ) Α4规格（2l〇X297公釐） ---------€------订-------線’ (請先閱讀背面之注意事項再填寫本頁) 449672The Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed different laws. 5. The method for manufacturing a photomask according to item 4 of the scope of patent application, wherein at least one group of the plurality of mother mask patterns in the above-mentioned group M of the plurality of mother mask patterns includes bonding of other predetermined plurality of mother mask patterns Zoner. 6. A method for manufacturing a photomask, which is a method for manufacturing a photomask with a device pattern, characterized in that a reduced image of one of a plurality of division patterns of the above device pattern as a division enlargement pattern is transferred to a mask substrate And a reduced image of another divided pattern in which at least a part of the same pattern is the same pattern, so that the same part can be transferred to the mask substrate in the same manner. 7. For example, the method for manufacturing a photomask according to item 6 of the patent application, wherein most of the above-mentioned divided patterns are exposed at the same time as light beams, and the reduced images thereof are bonded and transferred to the above mask substrates. The method for manufacturing a photomask according to any one of the first to seventh aspects of the patent application, wherein the reduced images of the above-mentioned master mask pattern of a plurality of sheets are sequentially transferred on the surface of the substrate in accordance with the above The mask is used by a collective exposure type reduction projection type exposure device or a scanning exposure type reduction projection type exposure device. 9. For the photomask manufacturing method according to any one of claims 1 to 7, in which the reduced images of the above-mentioned master mask pattern of a plurality of sheets are sequentially transferred on the surface of the above-mentioned substrate * i.e. Due to the application of the projection optical system in the projection exposure device using the above-mentioned photomask, the non-rotationally symmetric paper size uses the Chinese 0 Standard (CNS) A4 specification (210 × 297 mm) -------- -€ ------ Order ------- Line '(Please read the notes on the back before filling this page) 449672 A8 BS C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 像差和失真特性中的至少一項’分別修正上述母掩模 圖案的縮小圖像之成像特性者。 10. 如申請專利範圍第1項至第7項中任一項之光罩製造 方法，其中上述光罩更被使用在縮小投影上者β 11. 一種光罩製造方法，其係在形成有所定轉印用電路圖 案的光罩之製造方法中，其特徵爲包括： 形成母掩模，該母掩模被形成有包含分別對應上述 轉印用電路圖案中的1個或多數個電路區之1個或多 數個圖案單元之所定圖案， 將從上述母掩模的豳案所選擇的上述圖案單元之投影 圖像，以所定位置關係轉印於上述光罩用基板上者。 12. 如申請專利範圍第11項之光罩製造方法，其中上述電 路是對應積體電路中的中央處理機（CPU)核心部分，隨 機存取記憶體（RAM)部分、唯讀記憶體（ROM)部分、或 標準單元用的標準電路區中之任一電路者。 ia如申請專利範圍第11項之光罩製造方法，其中準備形 成有分別對應上述轉印用電路圖案內互異的電路區的 不同圖案單元之多數片母掩模，作爲上述母掩模， 將從該多數片母掩模的圖案所選擇的上述圖案單元之 投影圖像，依序以所定位置關係轉印於上述光罩用基板 上者.。 14·如申請專利範圍第1 1項之光罩製造方法，其中上述母 -3- 本紙張尺度適用中國國家梯準（CNS ) A4规格（210 X 297公羹） ---------y------訂------手 (請先閱讀背面之注$項再填寫本頁) 449672 .'V- 經濟部智慧財產局員工消費合作社印製 々、申請專利範圍 掩模是當製造多數種類的光罩時被使用* 瓜如申請專利範圍第11項之兑罩製造方法，其中上述母 掩模的上述圖案單元之縮小圖像被轉印於上述光罩用 的基板上之同時， 上述光罩更被使用在縮小投影上者。 16. 如申請專利範圍第11項之光罩製造方法，其中在上述 光罩用基板上除了上述母掩模的上述圖案單元圖像被 轉印的區域以外的區域中之至少一部分上，使用被聚 焦爲所定光點的曝光光束*以描畫上述轉印用電路圖 案之一部分者。 17. —種光罩製造裝置，其特徵爲具備著： 收容多數片掩模之掩模收容裝置； 可放置從該掩模收容裝置所選擇的1片掩模之掩模 台； 將該掩模台上的掩模之圖案縮小圖像投影於光罩用 基板上之投影光學系統： 將上述基板在垂直於上述光學投影系統的光軸之平 面上定位之基板台：及 爲了要在上述基板上進行上述多數片掩模的圖案縮 小圖像在上述基板上錯開來轉印，使上述掩模台上的掩 模和上述基板台上的上述基板對準位置之對準系統，於 上述掩模收容裝置，收容有作爲製造對象的光罩之圖 ---------1------訂------^ (請先聞讀背面之注意事項再填寫本育) 本紙張尺度適用中國國家標準（CNS ) A4规格（210X297公釐） 449672A8 BS C8 D8 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VI. Patent Application Scope At least one of aberration and distortion characteristics' is used to correct the imaging characteristics of the reduced image of the above master mask pattern. 10. The method for manufacturing a photomask according to any one of the items 1 to 7 of the scope of patent application, wherein the above photomask is further used for reducing the projection β 11. A method for manufacturing a photomask, The method for manufacturing a photomask for transferring a circuit pattern is characterized by comprising: forming a mother mask, the mother mask being formed to include one of a plurality of circuit regions corresponding to one or more of the circuit patterns for transferring; The predetermined pattern of one or a plurality of pattern units is transferred from the projection image of the pattern unit selected from the project of the master mask to the substrate for the photomask in a predetermined positional relationship. 12. For example, the method for manufacturing a photomask according to item 11 of the application, wherein the above circuit is a central processing unit (CPU) core portion, a random access memory (RAM) portion, and a read-only memory (ROM) in a corresponding integrated circuit. ), Or any circuit in the standard circuit area for standard cells. ia The method for manufacturing a photomask according to item 11 of the scope of patent application, wherein a plurality of mother masks having different pattern units corresponding to mutually different circuit regions in the above-mentioned transfer circuit pattern are prepared, and as the above-mentioned mother mask, The projection images of the pattern units selected from the patterns of the plurality of mother masks are sequentially transferred onto the photomask substrate in a predetermined positional relationship. 14. · As for the manufacturing method of photomask in item 11 of the scope of application for patent, in which the above-mentioned paper size -3- is applicable to China National Standard (CNS) A4 (210 X 297 cm) -------- -y ------ Order ------ hand (please read the note $ on the back before filling out this page) 449672 .'V- Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs The mask is used when manufacturing most types of photomasks. * The method of making masks according to the eleventh aspect of the patent application, wherein the reduced image of the pattern unit of the master mask is transferred to the photomask. At the same time as the substrate, the above-mentioned photomask is further used for reducing projection. 16. The mask manufacturing method according to item 11 of the scope of patent application, wherein the mask substrate is used on at least a part of a region other than a region where the pattern unit image of the mother mask is transferred on the mask substrate. An exposure light beam focused at a predetermined light spot * to draw a part of the circuit pattern for transfer described above. 17. A photomask manufacturing apparatus, comprising: a mask storage device that stores a plurality of masks; a mask table on which one mask selected from the mask storage device can be placed; and the mask A reduced pattern of a mask pattern on a stage is projected on a projection optical system of a mask substrate: a substrate stage in which the substrate is positioned on a plane perpendicular to the optical axis of the optical projection system: and in order to be on the substrate The pattern reduction images of the plurality of masks are shifted on the substrate to be transferred, and an alignment system for aligning the mask on the mask stage and the substrate on the substrate stage is stored in the mask. The device contains the photo mask as the object of manufacture --------- 1 ------ Order ------ ^ (Please read the precautions on the back before filling in this education) This paper size applies to China National Standard (CNS) A4 (210X297 mm) 449672 經濟部智慧財產局員工消費合作社印製 七、申請專利範圍 案，以分割放大圖案的圖案分別被形成多數片之母掩 模。 18. 如申請專利範圍第17項之光罩製造裝置，其中具有視界 選擇系統，選擇在於上述掩模圖案中任意位置的所 定形狀之圖案1並將藉由上述投影光學系統對該被選 擇的圖案之縮小圖像投影於光罩用基板上， 上述對準系統則爲使由上述視界選擇系統所選擇的 縮小圖像以所定位置關係轉印於上述基板上，使上述掩 模與上述基板台上的上述基板對準位置者。 19. 一種裝置的製造方法，該裝置係用作在基板上形成所定 圖案，其特徵爲； 將上述所定圖案放大的第1圖案更加放大之第2圖 案*分割成爲多數片的母掩模之圖案； 將多數片上述母掩模的圖案依序鍇開其位置而縮小投影 於規定的基板上，以製造形成有上述第1圖案之實際曝 光用光罩；及 將該實際曝光用光罩之縮小圖像轉印於上述基板上 者。 20. 如申請專利範圍第19項之裝置的製造方法，其中上述 母掩模是將上述第2圖案分別分割爲wTl(M是2以 上的整數）的多數片圖案， 將上述Μ組的多數片母掩模的圖案依序重叠於規定 (請先閲讀背面之注意^項再填寫本頁) 訂 線 本紙張尺度逋用中國國家標準（CNS ) Α4規格（2丨0Χ297公釐） C} 4 }612 r 清 ' 、 / ! ' i J ^ 六、申請專利範圍 (請先閲讀背面之注意事項再填寫本頁) 之基板上，來縮小投影，以製造形成有上述第1圖案之 實際曝光用光罩者。 21. —種裝置的製造方法，其係要在基板上形成所定電路 圖案的裝置之製造方法中，其特徵爲： 將對應上述所定電路圖案所放大的第1電路圖案中 之至少1個電路區之圖案單元形成在母掩模上， 將上述母掩模的上述圖案單元以所定位置關係轉印在 所定基板上，以製造形成有上述第1電路圖案之實際曝 光用光罩， -訂. 將該實際曝光用光罩的圖案之縮小圖像轉印於裝置用 基板上者。 •線 22·—種裝置的製造方法，其係在於將實際曝光用光罩的 圖案曝光轉印而施加精細加工之裝置製造方法中，其 特徵爲； 經濟部智慧財產局員工消費合作社印製 當在上述光罩上要形成上述圖案之際，將上述裝置的 放大1晶片份的圖案因應其處所分割，並將所分割的各 個圖案分別形成在多數片母掩模上， 將上述多數片母掩模上的上述經分割的圖案之縮小_ 像，分別轉印於上述光罩上的個別位置而加以合成者。 23.如申請專利範圍第22項之裝置的製造方法，其中從上 述多數片母掩模轉印於上述光罩之作業，即使用光學 式曝光裝置爲之。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 449672Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs VII. The scope of the patent application, the patterns of the divided and enlarged patterns were respectively masked by the mother of most films. 18. For example, the mask manufacturing device of the 17th scope of the patent application, which has a vision selection system, selects a pattern 1 of a predetermined shape at an arbitrary position in the above mask pattern, and uses the projection optical system to select the selected pattern. The reduced image is projected on a photomask substrate, and the alignment system is to transfer the reduced image selected by the vision selection system onto the substrate in a predetermined positional relationship, so that the mask and the substrate stage are transferred. Alignment of the above substrates. 19. A method for manufacturing a device, which is used to form a predetermined pattern on a substrate, and is characterized in that: the first pattern enlarged by the predetermined pattern is further enlarged by the second pattern * a pattern of a mother mask divided into a plurality of pieces ; Sequentially reducing the positions of the patterns of the above-mentioned master mask and projecting them on a predetermined substrate to produce a mask for actual exposure in which the first pattern is formed; and reducing the mask for actual exposure An image is transferred onto the substrate. 20. The manufacturing method of the device as claimed in claim 19, wherein the above-mentioned master mask is a plurality of slice patterns in which the second pattern is divided into wTl (M is an integer of 2 or more), and the plurality of slices in the M group are divided. The patterns of the master mask are sequentially superimposed on the regulations (please read the notes on the back ^ before filling this page). The paper size of the booklet uses the Chinese National Standard (CNS) Α4 specification (2 丨 0 × 297 mm) C} 4} 612 r clear ', /!' I J ^ VI. Patent application scope (please read the precautions on the back before filling this page) on the substrate to reduce the projection to produce the actual exposure light with the first pattern above Hooders. 21. A method for manufacturing a device, which is a method for manufacturing a device for forming a predetermined circuit pattern on a substrate, characterized in that at least one circuit area in the first circuit pattern enlarged corresponding to the predetermined circuit pattern is described above. The pattern unit is formed on the mother mask, and the pattern unit of the mother mask is transferred on a predetermined substrate with a predetermined positional relationship to produce a photomask for actual exposure in which the first circuit pattern is formed,-order. The reduced image of the pattern of the actual exposure mask is transferred to a device substrate. • Line 22 · —A method for manufacturing a device, which is a method for manufacturing a device by exposing and transferring the pattern of an actual photomask for exposing and applying fine processing, which is characterized by: printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs When the above pattern is to be formed on the photomask, the pattern of the enlarged one wafer of the device is divided according to its location, and each of the divided patterns is formed on a plurality of mother masks to mask the plurality of mothers. The reduced images of the divided patterns on the mold are transferred to individual positions on the photomask and combined. 23. The method of manufacturing a device according to item 22 of the patent application, wherein the operation of transferring the above-mentioned photomask from the above-mentioned majority of the master masks is performed by using an optical exposure device. This paper size applies to China National Standard (CNS) A4 (210X297 mm) 449672 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 — 24*如申請專利範圍第1項之光軍製造方法，其中該多數片之 母掩模係分別形成在對應於互相不同功能的電路區之不 同圖案單元。 25.如申請專利範圍第24項之光罩製造方法，其中採用該多 數片之母掩模，用來形成轉印用之圖案與電路構成不同 的別轉印用之圖案。 26如申請專利範圍第1項之光罩製造方法，其中在該多數片 之母掩模之至少一部份，使其曝光條件差異者。 27.—種光罩製造方法，係採用於轉印電路圖案於裝置基板 上的曝光裝置，其特徵爲， 將該電路圖案分割爲多數之圖案，同時分別將多數之 圖案在掩模上錯開來轉印時，依據在曝光裝置的電路圖 案之轉印特性，用來調整在掩模基板上的圖寒轉印裝置 與圖像特性之至少一方。 28·如申請專利範圍第27項之光罩製造方法，其中該多數之 圖案，係分別對應互相以不同功能的電路區構成的電路 圖案。 29.如申請專利範圍第27項之光罩製造方法，其中該電路圖 案之擴大圈案分割爲多數，該多數之圖案係將其縮小圖 像轉印於掩模基板上者。 3α如申請專利範圍第29項之光罩製造方法，其中該圖像特 性，係包含形成圖案之縮小圖像的投影光學系之光學特 (請先閲讀背面之注^^項再填寫本頁) S3. 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210Χ297公釐） /Ϊ-Τ經濟部智慧財產局員工消費合作社印製 AS B8 C8 D8 六、申請專利範圍 性。 31. —種光罩，具有互相不同功能的多數電路區之電路圖 案，用於轉印在裝置基板上的曝光裝置，其特徵爲， 以該電路區單位由光束照明其擴大圖案，同時將擴大 圖案之縮小圖像在掩模基板上合成來形成電路圖案。 览如申請專利範圍第31項之光罩，其中該擴大圖案係總括 曝光方式，或掃描曝光方式而轉印於掩模基板上者。 I n I n n I I I i / n n It T- n _ _ _ n 1 T i 鉉 (請先閲讀背面之注$項再填寫本頁) 本紙張尺度逋用中國國家榇準（CNS ) A4規潘（210X297公釐）Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application scope of patents-24 * The manufacturing method of the Guangjun Army under item 1 of the scope of patent application, in which the mother masks of the majority films are formed on circuits corresponding to different functions Different pattern units. 25. The method for manufacturing a photomask according to item 24 of the patent application scope, wherein the plurality of mother masks are used to form a pattern for a different transfer pattern and a circuit configuration different from each other. 26. The method for manufacturing a photomask according to item 1 of the scope of patent application, wherein at least a part of the mother mask of the plurality of wafers has different exposure conditions. 27. A photomask manufacturing method using an exposure device for transferring a circuit pattern onto a device substrate, characterized in that the circuit pattern is divided into a plurality of patterns, and the plurality of patterns are staggered on the mask respectively During the transfer, at least one of the image transfer device and the image characteristics on the mask substrate is adjusted according to the transfer characteristics of the circuit pattern on the exposure device. 28. The method for manufacturing a photomask according to item 27 of the scope of patent application, wherein the plurality of patterns correspond to circuit patterns each having circuit regions with different functions. 29. The method for manufacturing a photomask according to item 27 of the application, wherein the enlarged circle of the circuit pattern is divided into a plurality, and the pattern of the majority is a pattern in which a reduced image is transferred to a mask substrate. 3α The method for manufacturing a mask according to item 29 of the scope of patent application, wherein the image characteristics are optical characteristics of a projection optical system including a reduced image forming a pattern (please read the note ^^ on the back before filling this page) S3. This paper uses China National Standard (CNS) A4 specification (210 × 297 mm) / printed by AS-B8, C8, D8, Consumer Cooperatives of Intellectual Property Bureau of the Ministry of Economic Affairs. 6. Scope of patent application. 31. A photomask having circuit patterns of a plurality of circuit regions having different functions from each other and used for an exposure device transferred on a device substrate, characterized in that the circuit pattern is illuminated by a light beam in the unit of the circuit region, and at the same time, the expansion pattern is enlarged. The reduced image of the pattern is synthesized on a mask substrate to form a circuit pattern. For example, the photomask in the scope of patent application No. 31, in which the enlarged pattern is a general exposure method, or a scanning exposure method and is transferred onto a mask substrate. I n I nn III i / nn It T- n _ _ _ n 1 T i 210X297 mm)
TW087121685A 1997-12-25 1998-12-24 Process and apparatus for manufacturing photomask and method of manufacturing the same TW449672B (en)

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JP35667997A JP2001092103A (en) 1997-12-25 1997-12-25 Method and device for manufacturing photomask and method of manufacturing device
JP36002797A JP2001092104A (en) 1997-12-26 1997-12-26 Method of manufacturing photomask and method of namufacturing device
JP2535798A JP2001092108A (en) 1998-02-06 1998-02-06 Method and device for manufacturing photomask and method of manufacturing device

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JP3347528B2 (en) * 1995-05-23 2002-11-20 キヤノン株式会社 Semiconductor manufacturing equipment
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106645178A (en) * 2017-01-11 2017-05-10 广西师范大学 Apparatus for detecting bamboo strip edge defects
CN106645178B (en) * 2017-01-11 2023-05-12 广西师范大学 Bamboo splint edge defect detection device

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US20020187406A1 (en) 2002-12-12
WO1999034255A1 (en) 1999-07-08
US6677088B2 (en) 2004-01-13
KR20010033527A (en) 2001-04-25
AU1689399A (en) 1999-07-19
KR100536781B1 (en) 2005-12-14
EP1043625A4 (en) 2004-11-10

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