4442 72 _ 五、發明說明（1) 本發明係有關於一種有效的電子束背景強度補償 法。其利用在原始之主圖案上所加入之輔助圖案以電方 J光基板上的光阻時有效的電子束背景強度補償： 光顯影後之光阻具有較佳之臨界尺寸一致（c D -』、 uniformity) ° 第1圖係一預定轉移至基板上之非均勻之主圖案，ρ 第1圖—中可以看出’在主圖案j 〇2之邊緣部份與中央邹份攸 圖案密度明顯不同。以兩個面積相等之圓框j及2區域中 圖案密度為例，很明顯地，位於主圖案〗〇2邊緣之圓框1 = 具有較少的圖案面積而位於主圖案1〇2中央部份之圓樞2 則具有較多的圖案面積。 在以電子束曝光基板上的光阻時，由於電子束的背向 散射及二次散射使得鄰近效應逐漸顯現，不僅造成轉移到 基板上的線路圖案失真，益因而消耗掉大部份的臨界尺寸 容許度（critical dimension tolerance)，增加製輕上之 困難。且如第1圖之非均勻之主圖案，在橫越整個圖案各 點之圖案密度範圍可由零到無限大，使得在以電子束曝光 基板上的光阻時難以正確估計補償曝光劑量的強度，以降 低前述之光學鄰近效應造成轉移的線路圖案失真，故產生 較差之臨界尺寸一致性（CD uniformity)。 一般的曝光劑量調整方法是用來改善均勻圖案之鄰近 效應’而對於非均句之圖案則是使用解非線性方程式 (non-iinear eQUation)的方法’但還是存有顯著的錯誤 且修正的速度慢’特別是對於由很緻密圖案裘很稀疏圖案4442 72 _ V. Description of the invention (1) The present invention relates to an effective electron beam background intensity compensation method. It uses the auxiliary pattern added to the original main pattern to compensate for the electron beam background intensity that is effective when the photoresist on the electric J-substrate is used: The photoresist after photo development has a better critical size consistency (c D-", uniformity) ° Figure 1 is a non-uniform main pattern that is scheduled to be transferred to the substrate. ρ Figure 1-It can be seen that the edge density of the main pattern j 〇2 is significantly different from the central Zou Fenyou pattern density. Taking the pattern density in the area of two circular frames j and 2 with the same area as an example, it is obvious that the circular frame 1 located at the edge of the main pattern 1 = has a smaller pattern area and is located at the center of the main pattern 102 The pivot 2 has more pattern area. When the photoresist on the substrate is exposed with an electron beam, the proximity effect gradually appears due to the backscattering and secondary scattering of the electron beam, which not only causes distortion of the circuit pattern transferred to the substrate, but also consumes most of the critical size. Tolerance (critical dimension tolerance), increase the difficulty of light system. And as shown in the non-uniform main pattern in Figure 1, the pattern density range from zero to infinity across each point of the entire pattern makes it difficult to accurately estimate the intensity of the compensation exposure dose when exposing the photoresist on the substrate with an electron beam. In order to reduce the distortion of the transferred circuit pattern caused by the aforementioned optical proximity effect, poor CD uniformity is generated. The general exposure dose adjustment method is used to improve the proximity effect of uniform patterns, while for non-uniform patterns, it uses the method of solving non-iinear eQUation. However, there are still significant errors and the speed of correction. Slow ', especially for very sparse patterns made of very dense patterns
五、發明說明（2) 之圖案密度有报大差值之非均勻圖案。 電子述】題’本發明之-目的即在提供有效的 補償之方法’其利用在原始之主圖案上所 效的電子束背景=】：束曝光基板上的光阻，以達到有 佳之臨界ΐΐϋ 使曝光顯影後之光阻具有較 束背一目的在於提供於光罩製造時有效的電子 戌一^17員之方法，其在上述之基板與光阻間先行形 以製^一^罩再將曝光顯影後之光阻層圓案轉移至遮蔽層 因此’本發明提洪一種有效的電子束背景強度補償之 二’包括以下步驟。首先，於一基板上形成一光阻層， 提供一預定轉移至基板上主圖案此主圖案包括緻 ^'案區與稀疏圖案區。其次，將一輔助圖案與此主圖案 、口併使此主圖案之緻密圖案區與稀疏圖案區之圖案密度差 減小。然後，以此主圖案與此輔助圖案對此基板上之光阻 層施行一電子束曝光程序。最後，對於此光阻層施行一 影程序。5. Description of the invention (2) The pattern density has non-uniform patterns with large differences. [Electronic description] The question "The present invention-the purpose is to provide an effective compensation method" which uses the electron beam background effect on the original main pattern =]: beam exposure on the substrate to achieve a good criticality ΐΐϋ The purpose of making the photoresist after exposure and development more beam-backed is to provide an effective method for electrons in the manufacture of photomasks, which first forms between the substrate and the photoresist to form a mask and then The photoresist layer after the exposure and development is transferred to the masking layer. Therefore, the present invention “improves an effective electron beam background intensity compensation second” includes the following steps. First, a photoresist layer is formed on a substrate to provide a main pattern that is intended to be transferred to the substrate. The main pattern includes a case region and a sparse pattern region. Secondly, the auxiliary pattern is compared with the main pattern, and the difference in pattern density between the dense pattern region and the sparse pattern region of the main pattern is reduced. Then, an electron beam exposure process is performed on the photoresist layer on the substrate with the main pattern and the auxiliary pattern. Finally, a shadow process is performed on the photoresist layer.
而將本發明之有效的電子束背景強度補償之方法應用I 在光罩製造上時，可在上述之基板與光阻間先行形成一遮、 蔽層’再將曝光顯影後之光阻層圖案轉移至遮蔽層以製作 一光罩0 由於本發明之有效的電子束背景強度補償之方法，對 於不同的圖案密度能精確的控制電子束曝光的補償劑量。The effective method of electron beam background intensity compensation of the present invention is applied I. When manufacturing a photomask, a masking layer can be formed between the above substrate and the photoresist, and the photoresist layer pattern after exposure and development can be formed. Transfer to the shielding layer to make a photomask. Due to the effective electron beam background intensity compensation method of the present invention, the compensation dose of the electron beam exposure can be accurately controlled for different pattern densities.
4442 72 五、發明說明（3) ' --------- 所以在以電子束曝光基板上的光阻時，可舒 的背向散射及二次散射造成之光學；近：匕=子束 f板上的線路圖案較精確，而獲得較佳的臨界轉移到 ^，增加製程的良率。且可有效簡化曝光系 、一致 照射時補償劑量之内部計算，節省成本。w對電子束 本發明之上述目的、特徵及優點能 特舉較佳實施例，並配合所附圖式，f懂， 下。 叶肩呪明如 圖式簡單說明 第1圖係顯示預定轉移至基板上之非均勻之 荦第2圖係顯示本發明實施例之於主圖案上加入輔：。 案。 裨助圓 3 3圖係顯示預定被轉移圖案之基板之剖面圖。 符號it:係顯示預定被轉移圖案之光罩基板之剖面圖。 =基板，20〜光罩基板；12、24〜光阻層；22〜 層，102〜主圖案；106〜辅助圖案。 遮蔽 實施例1 =2圖係顯不本發明實施例之於主圖案上加 案。為了簡便起見，第2圖中盥篦^ R細门+ —料/助圖 同之符號。 自甲與第1圖相同之…牛係使用相 I先，請參照第3圖’於一基板1〇上形成一光p且屏 子聚人^0:材料可由破螭、陶瓷、金屬、半導體二八 子^合物、或前述材料之组合中選用。接著^第^所分4442 72 V. Description of the invention (3) '--------- Therefore, when the photoresist on the substrate is exposed with an electron beam, the optics caused by the backscattering and secondary scattering can be reduced; The line pattern on the sub-beam f plate is more accurate, and a better critical transition is obtained to increase the yield of the process. And it can effectively simplify the internal calculation of the exposure system and the consistent compensation dose, saving costs. w-pair of electron beams The above-mentioned objects, features, and advantages of the present invention can be exemplified by preferred embodiments, and in conjunction with the accompanying drawings, f understand, next. The leaf shoulders are as simple as the drawings. The first figure shows the non-uniformity that is scheduled to be transferred to the substrate. The second figure shows the embodiment of the present invention with the addition of auxiliary: on the main pattern. case. The help circle 3 3 is a cross-sectional view showing a substrate to be transferred. The symbol it: is a cross-sectional view of a mask substrate showing a pattern to be transferred. = Substrate, 20 to photomask substrate; 12, 24 to photoresist layer; 22 to layer, 102 to main pattern; 106 to auxiliary pattern. Masking Example 1 = 2 shows that the embodiment of the present invention is added to the main pattern. For the sake of simplicity, in the figure 2 ^ R 篦 门 +-material / auxiliary picture The same symbol. Since the first is the same as the first picture ... first, use the phase I in the cattle system, please refer to the third picture 'form a light p on a substrate 10 and the screen gathers ^ 0: materials can be broken, ceramic, metal, semiconductor It is selected from the two-eighth compound, or a combination of the foregoing materials. ^ 第 ^ 分
d442 ΊΟ 五、發明說明（4) 示’提供一預定轉移至基板10上主圖案1〇2，此主圖案包 括敏密圖案區與稀疏圖案區。之後，將一輔助圖案1〇6與 主圖案102合併使主圖案102之緻密圖案區與稀疏圖案區之 圖案密度差減小，其中，輔助圖案1〇6内之圖案可依所需 要調整之圖案密度值來決定’本實施例係使用一系列之細 線圖案。輔助圖案之形狀、線寬及間隔亦可由微影製程之 偏差值來決/t ’本實施例輔助圖案之線寬係採用小於 或等於製程之偏差值。 ' 其次，以主圖案106與輔助圖案102之合併圖幸對 川施行-電子束曝光…之後，對於光; 連串實際成像程序’首先進行顯影，其後， 光阻層1 2作為罩幕，蝕刻基板1 〇，释 轉移至基板。由於輔助圖案之圖案 時因為輔助圖案106之線寬小於或等於=在進仃微影製程 以當製程完成時，輔助圖案1〇6將自動之偏差值，所 由第2圖中可以看出，在與第1圖承友。 102比較之下’由於輔助圖案1〇6的加之非均勻之主圖案 面積較在第1圖令之相同位置之圓樞i入’圓框1内之圖案 其圖案密度值與圓框2較接近，而橫^之圖案面積多，使 案密度差範圍能縮小。 5越整個圖案各點之圖 表1是利用第1圖之非均勻之主圖 加入輔助圖案得到電子束背景舜产 艰及本實施例之藉由 子束曝光基板上的光阻，顯影後^且=之合併圖案，以電 臨界尺寸值。由表i中可發現利®^案之中央線之12段 貫施例之合併圖案，d442 ΊΟ 5. The invention description (4) shows that a main pattern 102 intended to be transferred to the substrate 10 is provided. The main pattern includes a dense pattern region and a sparse pattern region. After that, an auxiliary pattern 106 is merged with the main pattern 102 to reduce the difference in pattern density between the dense pattern region and the sparse pattern region of the main pattern 102. Among them, the pattern in the auxiliary pattern 106 can be adjusted as needed. Density value to determine 'This embodiment uses a series of fine line patterns. The shape, line width, and interval of the auxiliary pattern can also be determined by the deviation value of the lithography process / t '. In this embodiment, the line width of the auxiliary pattern is less than or equal to the deviation value of the process. 'Second, the combination of the main pattern 106 and the auxiliary pattern 102 is performed on the Chuan Shi-electron beam exposure ... After that, for light; a series of actual imaging procedures' first development, and then, the photoresist layer 12 as a mask The substrate 10 is etched and transferred to the substrate. As the pattern of the auxiliary pattern is because the line width of the auxiliary pattern 106 is less than or equal to = when the lithography process is performed to complete the process, the auxiliary pattern 106 will automatically have a deviation value, as can be seen from the second figure, Chengyou in Figure 1. Comparing 102, the pattern density value of the pattern in the round frame 1 is closer to that of the round frame 2 due to the non-uniform main pattern area of the auxiliary pattern 106 and the circle in the same position in the first drawing. , And the pattern area of the cross is large, so that the range of the case density difference can be reduced. 5 The chart 1 of each point of the entire pattern is obtained by adding the auxiliary pattern from the non-uniform main image of FIG. 1 to obtain the electron beam background. The photoresist on the substrate is exposed by the subbeam in this embodiment. After development ^ and = The combined pattern is the electrical critical dimension value. From Table i, you can find the merged pattern of the 12 sections of the central line of the Lee® case.
五、發明說明（5) 以電子束曝光基板上的光阻，顯影後光阻圖案之中央線之 最：大臨界尺寸差值由30 nm大幅減至20 nm。 表1 原始臨界尺寸値in) 本女施例臨界尺寸倍（以in) 1 — · 0.833 0.848 2 0.842 0.845 3~1 ***---- 0.837 0.853 4 ----- 5 —---- 0.83 0.841 0.838 ... 0.849 0 0.845 0.85 一.Ί 0.846 〇 844 8 0.844 0.847 9 0.843 η o A A 10 0.847 υ. 〇 ^ Π 11 ———°-8i_ 0^55 j __ 0.853_ 0.851 實施例2 於光的電子束背景強度補償之方*，可利用 層22:土光=:第〜圖，於-光罩基板2。上形成一遮蔽 蔽層22可岛“罩基板20之材料可為石英玻璃，遮 轉移至：袁；接著’如第2圖所示，提供-預定 區與稀疏主圖案102，此主圖案包括緻密圖案 圖索1。2之上J輔助圖案106與主圖案1〇2合併使主 其中，辅助二區與稀疏圖案區之圖案密度差減小， 值來決定，本：1 二丨1之圖案一可依所需要調整之圖案密度 之形狀、％】二二：使二「系列之細線圖案。輔助圖案 線見及間隔亦可由微影製程之偏差值來決定，本V. Description of the invention (5) Expose the photoresist on the substrate with an electron beam. The center line of the photoresist pattern after development is the maximum: the large critical dimension difference is greatly reduced from 30 nm to 20 nm. Table 1 Original critical dimensions 値 in) The critical dimension of the female example (in in) 1 — · 0.833 0.848 2 0.842 0.845 3 ~ 1 *** ---- 0.837 0.853 4 ----- 5 ----- -0.83 0.841 0.838 ... 0.849 0 0.845 0.85 I.Ί 0.846 〇844 8 0.844 0.847 9 0.843 η o AA 10 0.847 υ. 〇 ^ Π 11 ——— ° -8i_ 0 ^ 55 j __ 0.853_ 0.851 Example 2 The method for the compensation of the background intensity of the electron beam of the light *, can use the layer 22: earth light =: ~ ~ ~, the photomask substrate 2. A masking layer 22 may be formed on the island. The material of the cover substrate 20 may be quartz glass, and the mask is transferred to: Yuan; then, as shown in FIG. 2, a predetermined area and a sparse main pattern 102 are provided, and the main pattern includes denseness. The pattern map 1.2 is supplemented by the J auxiliary pattern 106 and the main pattern 102. The difference in pattern density between the auxiliary two region and the sparse pattern region is reduced, and the value is determined. This: 1 2 1 pattern 1 The shape and percentage of the pattern density that can be adjusted according to the need] 22: Make two "series of thin line patterns. The line and interval of auxiliary pattern lines can also be determined by the deviation value of the lithography process.
第8頁 4442 72 五、發明說明（6) 實施例輔助 值。 其次， 層2 4施行— 連串實際成 阻層24作為 移至遮蔽層 (未顯示）。 因為輔助圖 當製程完成 本發明 I ’其能由 本發明之結 本發明 制本發明。 範圍内，當 圍當視後附Page 8 4442 72 V. Description of the invention (6) Examples of auxiliary values. Secondly, layer 24 is implemented-a series of actual resistive layers 24 are moved to the shielding layer (not shown). Because the auxiliary diagram is completed when the process of the present invention I ', it can be made by the present invention. Within range
圖案106之線寬係採用 小於或等於製 程之偏差 中所應用之物質材料，並不限於實施例所引述 各種具恰當特性之物質和形成方法所置換，且 構空間亦不限於實施例弓丨用之尺寸大小。 雖已以較佳貫把例揭露如上，但其並非用以限 任何熟悉此技藝者’在不脫離本發明之精神和 可做些許之更動與潤飾。因此本發明之保護範 之申請專利範圍所界定者為準。 電子束曝光程序。之V1;;:併圖案對光阻 像释序，f二=對光阻層24施行-像魟序首先進仃顯影，接著 罩幕’巍刻遮蔽層22,藉以將光阻； 。最後’去除光阻層，即完成 =輔助二案1〇6内之圖案在進行微影製程時 案106之線覓小於或等於製程之偏差值’所以 時’輔助圖案106將自動除去。The line width of the pattern 106 is less than or equal to the material used in the deviation of the manufacturing process, and is not limited to being replaced by various substances and forming methods with appropriate characteristics cited in the examples, and the structure space is not limited to the examples. Size. Although the example has been disclosed as above, it is not intended to limit any person skilled in the art 'without departing from the spirit of the present invention and making some changes and retouching. Therefore, the scope of patent protection of the present invention shall prevail. Electron beam exposure program. V1 ;;: and pattern to the photoresist image interpretation sequence, f2 = implementation of the photoresist layer 24-the image sequence is first developed, and then the mask ′ engraved the shielding layer 22, so as to photoresist;. Finally, 'removing the photoresist layer, that is to complete = the pattern in 106 of the auxiliary case 10 when the lithography process is performed is less than or equal to the deviation value of the process 106', so the auxiliary pattern 106 will be automatically removed.