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TW429512B - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same

Info

Publication number
TW429512B
TW429512B TW088114043A TW88114043A TW429512B TW 429512 B TW429512 B TW 429512B TW 088114043 A TW088114043 A TW 088114043A TW 88114043 A TW88114043 A TW 88114043A TW 429512 B TW429512 B TW 429512B
Authority
TW
Taiwan
Prior art keywords
region
device isolation
quasi
semiconductor device
active region
Prior art date
Application number
TW088114043A
Other languages
Chinese (zh)
Inventor
Akio Kawamura
Akitaka Konishi
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW429512B publication Critical patent/TW429512B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76237—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)

Abstract

A semiconductor device includes: a semiconductor substrate having a first conductivity type region; a trench device isolation region formed in the semiconductor substrate; an active region defined by the trench device isolation region for forming a semiconductor element; and a quasi-active region having a second conductivity type impurity-diffused layer formed in a surface of the quasi-active region, wherein the trench device isolation region and the quasi-active region constitute a device isolation region.
TW088114043A 1998-08-27 1999-08-17 Semiconductor device and method for manufacturing the same TW429512B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10242071A JP2000077514A (en) 1998-08-27 1998-08-27 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
TW429512B true TW429512B (en) 2001-04-11

Family

ID=17083859

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088114043A TW429512B (en) 1998-08-27 1999-08-17 Semiconductor device and method for manufacturing the same

Country Status (3)

Country Link
JP (1) JP2000077514A (en)
KR (1) KR20000017223A (en)
TW (1) TW429512B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007155608A (en) * 2005-12-07 2007-06-21 Sharp Corp Sensor for surface shape recognition, and its manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02119238A (en) * 1988-10-28 1990-05-07 Matsushita Electric Ind Co Ltd Semiconductor device and manufacture thereof
KR0119961B1 (en) * 1993-12-30 1997-10-27 김주용 Fabrication method for capacitor of semiconductor device
KR0144915B1 (en) * 1995-02-25 1998-07-01 김광호 Semiconductor device using trench and manufacturing method thereof
KR100207479B1 (en) * 1996-06-29 1999-07-15 윤종용 Method for forming trench device isolation

Also Published As

Publication number Publication date
JP2000077514A (en) 2000-03-14
KR20000017223A (en) 2000-03-25

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees