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TW425495B - A polarization mask without chromium - Google Patents

A polarization mask without chromium Download PDF

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Publication number
TW425495B
TW425495B TW88120944A TW88120944A TW425495B TW 425495 B TW425495 B TW 425495B TW 88120944 A TW88120944 A TW 88120944A TW 88120944 A TW88120944 A TW 88120944A TW 425495 B TW425495 B TW 425495B
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TW
Taiwan
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layer
polarizing
polarization
flat plate
mask
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TW88120944A
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Chinese (zh)
Inventor
Sz-Min Lin
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United Microelectronics Corp
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Priority to TW88120944A priority Critical patent/TW425495B/en
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Publication of TW425495B publication Critical patent/TW425495B/en

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Abstract

The present invention proposes a polarization mask without chromium, which includes a transparent plate, a first polarization layer on one portion of region of the transparent plate, and a second polarization layer located on the transparent plate and one portion of region on the first polarization plate overlapped with the first polarization layer, wherein the polarization direction of the second polarization layer is perpendicular to the first polarization layer. The present invention provides a method to form a polarization mask, which includes providing a transparent plate, forming the first polarization layer on the transparent plate, and etching the first polarization layer. Then form the second polarization layer on the transparent plate and the first polarization plate, and etch one portion of the second polarization layer on the first polarization layer, so that the first polarization layer and the second polarization layer has an overlapped region.

Description

42549 5 五、發明說明ο) 5 - 1發明領域: 本發明係有關於一種偏極化曝光裝置,特別是有關於 一種不具有鉻之偏極化光罩及其製造方法。 5-2發明背景: 當臨界尺寸持續的緊縮,目前光學微影技術已經推進 到解析極限。一種增加光學解析度與縮小圖案間距的方式 是使用雙重影像曝光系統。如第一圖所示,顯示一種傳統 使用兩層鉻光罩的微影裝置。在第一圖中,一光源(未在 圖中顯示)從上發射光線經過第一光罩時被一透明平板13〇 的鉻120遮住,然後再經由第二光罩時被另一透明平板132 上的鉻1 22遮住。最後’投影到一晶圓i 〇〇上,使得晶圓 1 0 0上的光阻11 0曝光。這種方式解決了傳統光罩技術上, 圖^間距不能太接近的問題因而提高了光學解析度。然而 ’廷種方式雖然可以增加光學解析度,但是產量以及光學 對準的精確度仍然是考量的關鍵。這是因為在第一光罩與 第一光罩之間的光學上的干涉以及散射仍然存在。 另—種增加光學解析度的方式,是利用光學的偏極化 $象。如第二圖所示,一光罩具有一透明平板134,並且 藉由圖案轉移鉻之後在透明平板134上形成一鉻圖案124。 在鉻圖案1 24以及透明平板丨34上面分別形成一第—偏極板42549 5 V. Description of the invention ο) 5-1 Field of the invention: The present invention relates to a polarization exposure device, and more particularly to a polarization mask without chromium and a method for manufacturing the same. 5-2 Background of the Invention: As critical dimensions continue to shrink, optical lithography technology has advanced to the analytical limit. One way to increase optical resolution and reduce pattern spacing is to use a dual image exposure system. As shown in the first figure, a conventional lithography device using a two-layer chrome mask is shown. In the first picture, a light source (not shown) emits light from above when it passes through the first mask and is blocked by the chromium 120 of a transparent plate 130, and then passes through the second mask and is covered by another transparent plate. Chromium on 132 is covered by 22. Finally, it is projected onto a wafer i 00, so that the photoresist 110 on the wafer 100 is exposed. This method solves the problem that the distance between the figures cannot be too close in the conventional photomask technology, thereby improving the optical resolution. However, although this method can increase the optical resolution, the yield and the accuracy of optical alignment are still the key considerations. This is because optical interference and scattering between the first mask and the first mask still exist. Another way to increase optical resolution is to use optical polarization. As shown in the second figure, a photomask has a transparent flat plate 134, and a chromium pattern 124 is formed on the transparent flat plate 134 after the chromium is transferred by a pattern. A first polarizing plate is formed on the chrome pattern 1 24 and the transparent flat plate 34 respectively.

五、發明說明(2) 150與一第二偏極板152,其中第一偏極板15〇的 二偏極板的方向】52垂直。如果在光罩與光源之 片偏極板,其中一片偏極板的方向與第一偏極板 ,而另一片偏極板的方向與第二偏極板j 5 2相同 第一偏極板150的光線不能透過苐二偏極板152, 偏極板152的光線不能透過第一偏極板15〇。與第 光裝置相比較,等效上如同應用了兩片光罩而增 解析度,同時又解決了兩層光罩之間的光學干涉 的問題。然而’這種方式所形成的光罩需要三個 成鉻以及兩個偏極板)才能完成一片光罩。再者 雜的步驟容易產生微粒污染(particle c〇ntami 3發明目的及概述: 方向與第 間放置兩 1 5 0相同 ,則透過 透過第二 一圖的曝 加了光學 以及散射 步驟(形 ’其較複 nation ) 鑒於上述之發明昔县士 諸多缺點,本發明主要^二傳統的偏極化光罩所產生 光舉,其中Πίίϊΐ在於提供一不具有路之偏 / 々方式較傳統的偏極化光罩簡潔 t發月的另—目的在於形成光罩的步驟可以減少 的 偏極化 的污染 微粒 根據以上所述之目Μ ,^ s J之,目的,本發明提供了一種不具 偏極化光罩’其包含-材質為石英的透明平 板 有鉻之 位於透 i Π 第5頁 4254 9 55. Description of the invention (2) 150 is perpendicular to a second polarizing plate 152, where the direction of the two polarizing plates 52 of the first polarizing plate 15 is perpendicular. If the polarizing plate between the photomask and the light source, one of the polarizing plates is oriented in the same direction as the first polarizing plate, and the other polarizing plate is oriented in the same direction as the second polarizing plate j 5 2 The light of the polarizer plate 152 cannot pass through the second polarizer plate 152, and the light of the polarizer plate 152 cannot pass through the first polarizer plate 152. Compared with the first optical device, it is equivalent to increase the resolution as if two photomasks are applied, and at the same time, it solves the problem of optical interference between the two photomasks. However, the photomask formed in this way requires three chrome-forming and two polarizing plates) to complete a photomask. Furthermore, the complicated steps are prone to particle contamination (particle coontami 3 purpose and summary of the invention: the direction is the same as that of the first two places 50, then the optical and scattering steps (shape 'its (Comparative nation) In view of the many shortcomings of the above-mentioned inventions, the present invention mainly refers to the light generated by the traditional polarized photomask. Among them, Πίίϊΐ is to provide a polarization without a way / the more traditional polarization The photomask is simple and simple. Another purpose is to reduce the polarized pollution particles by the step of forming the photomask. According to the objectives M and ^ sJ described above, the present invention provides a non-polarized light. Hood 'which contains-transparent flat plate made of quartz with chrome located on transparent Π page 5 4254 9 5

五、發明說明(3) 意圖; 本發明之上述目的盥偻劻,肢〜 示,他〜,~ ^ ^ Λ 將以下列的貫施例以及圖 做5羊細說明如下,其中: 弟一圖為傳統的雙重弁罝^ 尤單之曝先裝置的結構示意圖; 第一圖為傳統的偏極化光罩的結構示意圖; 明平板上之一部份區域的第 ,係位在透明平板上以及在 與第一偏極層重疊,其中第 偏極層垂直^本發明提供一 中包含提供一透明平板,然 極層,並且蝕刻第一偏極層 極層上形成一第二偏極層, 層上的第二偏極層,使得第 重疊的區域。 圖式簡單說明: 第三圖係依據本發 示意圖; 第四圖顯示在本發 一偏極層,以及一第二偏極層 第一偏極層上之一部分區域上 二偏極層之偏極化方向與第一 種形成偏極化光罩的方法,其 後在透明平板上形成一第一偏 。之後’在透明平板與第一偏 並且蝕刻一部份位於第一偏極 一偏極層與第二偏極層具有一 明之不具有鉻的偏極化光罩的結構 的光罩上兩個偏極板偏極方向示V. Description of the invention (3) Intent; The above-mentioned purpose of the present invention is shown in the following. The following examples and drawings are used to explain the details below, including: It is a schematic diagram of the structure of a conventional dual-layer device, especially the first exposure device; the first diagram is a schematic diagram of the structure of a traditional polarizing mask; a part of the area on the bright plate is located on the transparent plate and The second polarizing layer is overlapped with the first polarizing layer. The present invention provides a method including providing a transparent flat plate, and then etching the first polarizing layer to form a second polarizing layer. On the second polar layer, make the first overlapping area. Brief description of the drawings: The third diagram is based on the schematic diagram of the present invention; the fourth diagram shows the partial poles of the two polarisation layers on a partial region of the first polarisation layer and a second polarisation layer of the first polarisation layer of the present invention. Direction and the first method of forming a polarizing mask, and then forming a first polarization on a transparent flat plate. Afterwards, two polarizers are formed on the transparent plate and the first polarizer and the etching is partially located on the photomask having the structure of the first polarizer, the second polarizer layer, and the second polarizer layer having a polarized mask without chromium. Polar plate polar direction

4254 9 b 五、發明說明(4) 第五A圖到第五D圖係根據本發明所揭露之技術,在形 成不具有鉻的偏極化光罩時的各步驟結構示意圖;及 第六圖係根據本發明不具有鉻的偏極化光罩,應在曝 光裝置之示意圖。 生要部分之代表符號·· 1 光源 2 聚焦透鏡組 3 縮小投射透鏡組 4 晶圓 5 偏極板 10 透明平板 20 第一偏極層 22 第二偏極層 25 重疊區域 30 不具有鉻之偏極化光罩 40 光阻層 100 底材 110 光阻 120 鉻 122 鉻 124 鉻4254 9 b V. Description of the invention (4) Figures A through F through D are schematic diagrams of steps in forming a polarized photomask without chromium according to the technology disclosed in the present invention; and Figure 6 This is a polarized photomask without chromium according to the present invention, and should be a schematic diagram of an exposure device. Symbols of important parts ... 1 light source 2 focusing lens group 3 reduced projection lens group 4 wafer 5 polarizing plate 10 transparent flat plate 20 first polarizing layer 22 second polarizing layer 25 overlapping area 30 does not have chrome bias Polarizing mask 40 Photoresist layer 100 Substrate 110 Photoresist 120 Chrome 122 Chrome 124 Chrome

4 25 4.。4 25 4 ..

五、發明說明(5) 130 透明平板 132 透明平板 134 透明平板 15 0 第一偏極層 15 2 第二偏極層 5 - 5發明詳細說明: 本發明的一些實施例會詳細描述如下。然而,除了詳 細描述外,本發明還可以廣泛地在其他的實施例施行,且 本發明的範圍不受限定,其以之後的專利範圍為準。 由於傳統的光罩在是在一透明平板上先形成一鉻圖案 ’然而形成鉻圖案的過程不可避免的會產生污染。本發明 主要是利用光學偏極化的特性來代替鉻圖案,因而本發明 之光罩不需要再形成一鉻圖案。接下來先介紹本發明之偏 極化光罩,然後再介紹形成本發明之光罩的製造方法。最 後’將本發明之光罩應用在微影過程中的曝光裝置。 如第三圖所示,係依據本發明之不具有鉻的偏極化光 罩30的結構示意圖。一透明平板1〇上面有兩層偏極層2〇, 2 2。透明平板1 〇的材質通常為石英,然而可以使用其他的 透明材質。在透明平板10的上面有一第一偏極層2〇與—第 二偏極層22,其中第一偏極層2〇與第二偏極層22有一重疊V. Description of the invention (5) 130 transparent plate 132 transparent plate 134 transparent plate 15 0 first polar layer 15 2 second polar layer 5-5 Detailed description of the invention: Some embodiments of the present invention will be described in detail as follows. However, in addition to the detailed description, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patents. Because the traditional photomask first forms a chrome pattern on a transparent flat plate, however, the process of forming the chrome pattern will inevitably produce pollution. The present invention mainly uses the characteristics of optical polarization to replace the chrome pattern, so the reticle of the present invention does not need to form a chrome pattern again. Next, the polarizing mask of the present invention will be described first, and then the manufacturing method of forming the mask of the present invention will be described. Finally, the photomask of the present invention is applied to an exposure device in a lithography process. As shown in the third figure, it is a schematic structural diagram of a polarized photomask 30 without chromium according to the present invention. A transparent flat plate 10 has two polar layers 20, 22 on it. The material of the transparent plate 10 is usually quartz, but other transparent materials can be used. There is a first polarizing layer 20 and a second polarizing layer 22 on the transparent flat plate 10, wherein the first polarizing layer 20 and the second polarizing layer 22 overlap

第8頁 425495 五、發明說明(6) 區25。本發明係利用這一重疊區域25替代傳統的鉻。 由於傳統光罩上的鉻具有阻擋光行經路線,因此第三 圖中第一偏.極層2〇與第二偏極層22的重疊區25也要具備阻 措光行經路線的能力。本發明的主要關鍵是將第一偏極層 2 0的偏極化方向與第二偏極層22的偏極化方向垂直,如第 四圖所示。因此,在透明平板〗〇上的重疊區域25可以取代 傳統的鉻。經由偏極化光的微影之後,重疊區域2 5的圖案 會在一晶圓上投影形成積體電路的圖案。 接下來介紹根據本發明所揭 絡的偏極化光罩時的各步驟結構 ’首先提供一透明平板1 〇,其材 統的方式依序在透明平板上形成 層4 0。接者,將一圖案轉移到光 為遮罩蝕刻第一偏極層2 〇,如第 統的方式移除光阻層40。如第五 與透明平板10的上面形成一第 述相同的方式將一部份的第二偏 所示。被移除的第二偏極層22係 上方,使得第一偏極層2〇與第二 露之技術, 示意圖。如 質通常為石 在形成 第五A 英,並 一第一偏極層2 0與 並且光 不具有 圖所示 且以傳 一光阻 阻層4 0上, 五B圖所示 C圖所示, 一偏極層2 2 極層2 2移除 在一部份之 偏極層2 2具 阻層40 。之後,以傳 在第一偏極層 。最後,以上 ’如第五D圖 第一偏極層2 〇 有重疊的部份 接著 介紹以本發明 之不具有鉻之偏極化光罩3〇應用 ^25495 五、發明說明¢7) 在偏極化曝光裝置上。如第六圖所示,偏極化曝光裝置包 含一光源1係用以產生光線,兩組偏極板5a與5b分別用以 將光源1產生的光線偏極化成兩種方向,一聚焦透鏡組2用 以將光線聚焦,一光罩3 0用以選擇性的通過光線,以及一 縮小投影透鏡組3將光線縮小並投射到一晶圓4上。 在使用本發明之不具有鉻之偏極化光罩3 0中,兩組偏 極板5a與5b係位於光源1與聚焦透鏡組2之間,是將光源1 所發射的光線分別地偏極化,其中偏極化的方向與光罩3 〇 上的偏極層相同。不具有鉻之偏極化光罩3 〇只讓光線經由 聚焦透鏡組2通過預設的圊案,係位於聚焦透鏡組2與縮小 投影透鏡組3之間。 因此’從光源1發射的光線只能經由兩組偏極板5 a與 5 b中的一個。如果光線經由第一偏極板5 a,則光線被偏極 成第一偏極板5a的方向。偏極後的光線經由聚焦透鏡組2 聚焦之後輻射到不具有鉻之偏極化光罩3 〇上。由於光罩3 0 上具有兩種偏極層2〇與22,在光罩30上的光只能通過其中 —種偏極層’比如偏極層20 (並不包含重疊區域25)。之 後’經由縮小投影透鏡組3將光線投射到晶圓4上,其中晶 圓4的表面具有光阻層(未在圖中顯示)。 相反地,光線經過第二偏極板5b之後,只能經過光罩 3 0上的另一個偏極層2 2 (並不包含重疊區域2 5 ),然後經Page 8 425495 V. Description of Invention (6) Zone 25. The present invention uses this overlapping area 25 instead of conventional chromium. Since the chromium on the conventional photomask has a path for blocking light, the overlapping region 25 of the first polar layer 20 and the second polar layer 22 in the third figure must also have the ability to block the light path. The main key of the present invention is to make the polarization direction of the first polarization layer 20 perpendicular to the polarization direction of the second polarization layer 22, as shown in the fourth figure. Therefore, the overlapping area 25 on the transparent plate can replace the conventional chromium. After the lithography of the polarized light, the pattern of the overlapping area 25 is projected on a wafer to form a pattern of the integrated circuit. Next, the structure of each step when the polarized photomask disclosed according to the present invention is introduced is first provided with a transparent flat plate 10, and the layer 40 is sequentially formed on the transparent flat plate in a systematic manner. Then, a pattern is transferred to the light to etch the first polarizing layer 20 as a mask, and the photoresist layer 40 is removed in a conventional manner. A part of the second deviation is shown in the same manner as the fifth is the same as that described above on the transparent flat plate 10. The removed second polarizing layer 22 is above, so that the technique of the first polarizing layer 20 and the second exposure is illustrated. If the quality is usually stone, a fifth A is formed, and a first polarizing layer 20 and the light does not have the photo shown in the figure and a photoresistive layer 40 is passed, as shown in the figure 5B and the figure C A polar layer 22 is removed from a part of the polar layer 22 with a resistance layer 40. After that, it was transmitted in the first polar layer. Finally, the above “such as the fifth polarizing layer of the first polarizing layer 2 in the fifth figure D.” The following describes the application of the polarizing mask without chromium 3 of the present invention. 3025 ^ 5. Description of the invention ¢ 7) Polarization exposure device. As shown in the sixth figure, the polarization exposure device includes a light source 1 for generating light, and two sets of polarizing plates 5a and 5b respectively for polarizing the light generated by the light source 1 into two directions. A focusing lens group 2 is used to focus the light, a mask 30 is used to selectively pass the light, and a reduction projection lens group 3 is used to reduce the light and project it onto a wafer 4. In the use of the polarized polarizing mask 30 without chromium of the present invention, two sets of polarizing plates 5a and 5b are located between the light source 1 and the focusing lens group 2, and the light emitted by the light source 1 is polarized separately. The polarization direction is the same as that of the polar layer on the photomask 30. The polarized polarizing mask 3 without chromium, which allows light to pass through the preset lens through the focusing lens group 2, is located between the focusing lens group 2 and the reduced projection lens group 3. Therefore, the light emitted from the light source 1 can only pass through one of the two sets of polarizing plates 5a and 5b. If the light passes through the first polarizing plate 5a, the light is polarized in the direction of the first polarizing plate 5a. The polarized light is focused by the focusing lens group 2 and radiated onto a polarizing mask 30 having no chromium. Since the photomask 30 has two types of polarizing layers 20 and 22, the light on the photomask 30 can only pass through it—a kind of polarizing layer ', such as the polarizing layer 20 (excluding the overlapping area 25). After that, the light is projected onto the wafer 4 through the reduction projection lens group 3, wherein the surface of the wafer 4 has a photoresist layer (not shown in the figure). On the contrary, after passing through the second polarizing plate 5b, the light can only pass through another polarizing layer 2 2 (excluding the overlapping area 2 5) on the photomask 30, and then pass through

务、發明說明(8) 由、%小投影透鏡組3將光線投射到晶圓4上。 由上所述’本發明之不具有鉻之偏極化光罩30的製造 #驟只有兩個(兩個偏極層),與傳統的偏極化光罩製造 適程相比,減少的步驟不但可以增加光罩製造的良率與產 出,同時可以減少微粒污染的發生。 以上所述僅為本發明之較佳實施例而已,並非用以限 定本發明之申請專利範圍;凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾,均應包含在下述之申技 專利範圍内。 月(8) The small projection lens group 3 projects light onto the wafer 4. According to the above, the manufacturing of the polarized photomask 30 without chromium of the present invention has only two steps (two polarized layers), which reduces the number of steps compared with the conventional polarized photomask manufacturing process. Not only can increase the yield and output of mask manufacturing, but also reduce the occurrence of particulate pollution. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of applying for patents. month

第11頁Page 11

Claims (1)

425495 六、申請專利範圍 1_ 一種偏極化光罩,至少包含: 一透明平板; 部份區域; 及 一第一偏極層,係位於該透明平板上之 極層上:一:3二在該透明平板上以及在該第-偏 镇i f 一與部分該第—偏極層重疊,其中該 弟一偏極層之偏極化方向與該第一偏極層垂直。、 m ϊ專利範圍第1項之光罩’其中上述透明平板之材 申明專利範圍第1項之光罩,其中上述之第二偏極層 人第一偏極層重疊區域經由微影投射到—晶圓後形成積體 電路。 4 · 種形成偏極化光罩的方法,該方法至少包含: 提供一透明平板; 在該透明平板上形成一第—偏極層; 餘刻該第一偏極層的一部份; 在該透明平板與該第一偏極層上形成一第二偏極層; 及 飯刻一部份位於該第一偏極層上的該第二偏極層,使 得該第一偏極層與該第二偏極層具有一重疊的區域。425495 VI. Scope of patent application 1_ A polarizing mask including at least: a transparent flat plate; a partial area; and a first polarizing layer on the polar layer on the transparent flat plate: one: thirty-two The transparent flat plate and a part of the first-polarity layer are overlapped with the first-polarity layer, and the polarization direction of the first-polarity layer is perpendicular to the first-polarity layer. , M 光 Mask of the first scope of the patent scope 'wherein the material of the above-mentioned transparent flat plate declares the mask of the first scope of the patent scope, wherein the overlapping area of the second polar layer and the first polar layer of the above-mentioned is projected to— Integrated circuits are formed after the wafer. 4. A method of forming a polarizing mask, the method at least comprising: providing a transparent flat plate; forming a first-polarizing layer on the transparent flat plate; leaving a part of the first polarizing layer in a moment; A second polarizing layer is formed on the transparent flat plate and the first polarizing layer; and the second polarizing layer is partially located on the first polarizing layer, so that the first polarizing layer and the first The bipolar layer has an overlapping area. 第12頁 4 2549 5 六、申請專利範圍 5. 如申請專利範圍第4項之方法,其中上述透明平板之材 質為石英。 6. 如申請專利範圍第4項之方法,其中上述之第二偏極層 與第一偏極層重疊區域經由微影投射到一晶圓後形成積體 電路。 7. 如申請專利範圍第4項之方法,其中上述之第二偏極層 之偏極化方向與該第一偏極層之偏極化方向垂直。Page 12 4 2549 5 6. Scope of patent application 5. For the method of the fourth scope of patent application, the material of the transparent flat plate is quartz. 6. The method according to item 4 of the scope of patent application, wherein the overlapping area of the second polar layer and the first polar layer described above is projected onto a wafer via lithography to form an integrated circuit. 7. The method according to item 4 of the scope of patent application, wherein the polarization direction of the second polarization layer is perpendicular to the polarization direction of the first polarization layer. 第13頁Page 13
TW88120944A 1999-12-01 1999-12-01 A polarization mask without chromium TW425495B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7150945B2 (en) 2003-11-18 2006-12-19 Micron Technology, Inc. Polarized reticle, photolithography system, and method of forming a pattern using a polarized reticle in conjunction with polarized light

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7150945B2 (en) 2003-11-18 2006-12-19 Micron Technology, Inc. Polarized reticle, photolithography system, and method of forming a pattern using a polarized reticle in conjunction with polarized light
US7569311B2 (en) 2003-11-18 2009-08-04 Micron Technology, Inc. Method of forming a pattern using a polarized reticle in conjunction with polarized light
US7592107B2 (en) 2003-11-18 2009-09-22 Micron Technology, Inc. Polarized reticle, photolithography system, and method of fabricating a polarized reticle

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