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TW374050B - Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing - Google Patents

Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing

Info

Publication number
TW374050B
TW374050B TW087112772A TW87112772A TW374050B TW 374050 B TW374050 B TW 374050B TW 087112772 A TW087112772 A TW 087112772A TW 87112772 A TW87112772 A TW 87112772A TW 374050 B TW374050 B TW 374050B
Authority
TW
Taiwan
Prior art keywords
trace
chemical mechanical
mechanical polishing
isrm
predicted
Prior art date
Application number
TW087112772A
Other languages
Chinese (zh)
Inventor
Andreas Wiswesser
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW374050B publication Critical patent/TW374050B/en

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A predicted in-situ reflectivity measurement (ISRM) trace is calculated for a substrate undergoing a chemical mechanical polishing. This predicted IESM trace is an estimate of the measured reflectivity of the substrate as a function of time. During polishing, a laser interferometric detector is used to measure the reflectivity of the substrate and generate a measured ISRM trace. The measured trace is compared to the predicted trace, and the polishing process may be adjusted based on the comparison. For example, the predicated ISRM trace may be used to detect the polishing endpoint.
TW087112772A 1997-10-31 1998-08-03 Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing TW374050B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96208597A 1997-10-31 1997-10-31

Publications (1)

Publication Number Publication Date
TW374050B true TW374050B (en) 1999-11-11

Family

ID=25505399

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112772A TW374050B (en) 1997-10-31 1998-08-03 Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing

Country Status (4)

Country Link
EP (1) EP1027576A1 (en)
JP (1) JP2001522139A (en)
TW (1) TW374050B (en)
WO (1) WO1999023449A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574787B (en) * 2011-04-28 2017-03-21 應用材料股份有限公司 Varying coefficients and functions for polishing control

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Publication number Priority date Publication date Assignee Title
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
WO2001046684A1 (en) * 1999-12-23 2001-06-28 Kla-Tencor Corporation In-situ metalization monitoring using eddy current measurements and optical measurements
IL134626A (en) 2000-02-20 2006-08-01 Nova Measuring Instr Ltd Test structure for metal cmp process control
US20020072296A1 (en) 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
US6801322B2 (en) * 2001-12-13 2004-10-05 Freescale Semiconductor, Inc. Method and apparatus for IN SITU measuring a required feature of a layer during a polishing process
US7052369B2 (en) 2002-02-04 2006-05-30 Kla-Tencor Technologies Corp. Methods and systems for detecting a presence of blobs on a specimen during a polishing process
US7160173B2 (en) 2002-04-03 2007-01-09 3M Innovative Properties Company Abrasive articles and methods for the manufacture and use of same
US6709312B2 (en) * 2002-06-26 2004-03-23 Motorola, Inc. Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process
US7089081B2 (en) 2003-01-31 2006-08-08 3M Innovative Properties Company Modeling an abrasive process to achieve controlled material removal
JP2005203729A (en) * 2003-12-19 2005-07-28 Ebara Corp Substrate polishing apparatus
CN100372093C (en) * 2004-12-10 2008-02-27 上海宏力半导体制造有限公司 Method for real-time measuring of milling eliminating rate
US7226339B2 (en) * 2005-08-22 2007-06-05 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US20090275265A1 (en) * 2008-05-02 2009-11-05 Applied Materials, Inc. Endpoint detection in chemical mechanical polishing using multiple spectra
US9551567B2 (en) * 2013-10-25 2017-01-24 Applied Materials, Inc. Reducing noise in spectral data from polishing substrates
JP7046358B2 (en) * 2018-04-17 2022-04-04 スピードファム株式会社 Polishing equipment
CN108627107B (en) * 2018-05-08 2019-09-27 中煤科工集团重庆研究院有限公司 Device and method for monitoring thickness of deposited dust in pipeline
KR102708233B1 (en) * 2019-02-15 2024-09-23 주식회사 케이씨텍 Substrate polishing system
CN115284162B (en) * 2022-07-19 2024-03-19 华虹半导体(无锡)有限公司 Method for monitoring physical properties of dielectric layer and semiconductor chip performance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
EP0738561B1 (en) * 1995-03-28 2002-01-23 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI574787B (en) * 2011-04-28 2017-03-21 應用材料股份有限公司 Varying coefficients and functions for polishing control

Also Published As

Publication number Publication date
EP1027576A1 (en) 2000-08-16
JP2001522139A (en) 2001-11-13
WO1999023449A1 (en) 1999-05-14

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