TW374050B - Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing - Google Patents
Method and apparatus for modeling substrate reflectivity during chemical mechanical polishingInfo
- Publication number
- TW374050B TW374050B TW087112772A TW87112772A TW374050B TW 374050 B TW374050 B TW 374050B TW 087112772 A TW087112772 A TW 087112772A TW 87112772 A TW87112772 A TW 87112772A TW 374050 B TW374050 B TW 374050B
- Authority
- TW
- Taiwan
- Prior art keywords
- trace
- chemical mechanical
- mechanical polishing
- isrm
- predicted
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
A predicted in-situ reflectivity measurement (ISRM) trace is calculated for a substrate undergoing a chemical mechanical polishing. This predicted IESM trace is an estimate of the measured reflectivity of the substrate as a function of time. During polishing, a laser interferometric detector is used to measure the reflectivity of the substrate and generate a measured ISRM trace. The measured trace is compared to the predicted trace, and the polishing process may be adjusted based on the comparison. For example, the predicated ISRM trace may be used to detect the polishing endpoint.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96208597A | 1997-10-31 | 1997-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW374050B true TW374050B (en) | 1999-11-11 |
Family
ID=25505399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087112772A TW374050B (en) | 1997-10-31 | 1998-08-03 | Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1027576A1 (en) |
JP (1) | JP2001522139A (en) |
TW (1) | TW374050B (en) |
WO (1) | WO1999023449A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI574787B (en) * | 2011-04-28 | 2017-03-21 | 應用材料股份有限公司 | Varying coefficients and functions for polishing control |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6628397B1 (en) | 1999-09-15 | 2003-09-30 | Kla-Tencor | Apparatus and methods for performing self-clearing optical measurements |
US6671051B1 (en) | 1999-09-15 | 2003-12-30 | Kla-Tencor | Apparatus and methods for detecting killer particles during chemical mechanical polishing |
WO2001046684A1 (en) * | 1999-12-23 | 2001-06-28 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements and optical measurements |
IL134626A (en) | 2000-02-20 | 2006-08-01 | Nova Measuring Instr Ltd | Test structure for metal cmp process control |
US20020072296A1 (en) | 2000-11-29 | 2002-06-13 | Muilenburg Michael J. | Abrasive article having a window system for polishing wafers, and methods |
US6514775B2 (en) | 2001-06-29 | 2003-02-04 | Kla-Tencor Technologies Corporation | In-situ end point detection for semiconductor wafer polishing |
US6801322B2 (en) * | 2001-12-13 | 2004-10-05 | Freescale Semiconductor, Inc. | Method and apparatus for IN SITU measuring a required feature of a layer during a polishing process |
US7052369B2 (en) | 2002-02-04 | 2006-05-30 | Kla-Tencor Technologies Corp. | Methods and systems for detecting a presence of blobs on a specimen during a polishing process |
US7160173B2 (en) | 2002-04-03 | 2007-01-09 | 3M Innovative Properties Company | Abrasive articles and methods for the manufacture and use of same |
US6709312B2 (en) * | 2002-06-26 | 2004-03-23 | Motorola, Inc. | Method and apparatus for monitoring a polishing condition of a surface of a wafer in a polishing process |
US7089081B2 (en) | 2003-01-31 | 2006-08-08 | 3M Innovative Properties Company | Modeling an abrasive process to achieve controlled material removal |
JP2005203729A (en) * | 2003-12-19 | 2005-07-28 | Ebara Corp | Substrate polishing apparatus |
CN100372093C (en) * | 2004-12-10 | 2008-02-27 | 上海宏力半导体制造有限公司 | Method for real-time measuring of milling eliminating rate |
US7226339B2 (en) * | 2005-08-22 | 2007-06-05 | Applied Materials, Inc. | Spectrum based endpointing for chemical mechanical polishing |
US20090275265A1 (en) * | 2008-05-02 | 2009-11-05 | Applied Materials, Inc. | Endpoint detection in chemical mechanical polishing using multiple spectra |
US9551567B2 (en) * | 2013-10-25 | 2017-01-24 | Applied Materials, Inc. | Reducing noise in spectral data from polishing substrates |
JP7046358B2 (en) * | 2018-04-17 | 2022-04-04 | スピードファム株式会社 | Polishing equipment |
CN108627107B (en) * | 2018-05-08 | 2019-09-27 | 中煤科工集团重庆研究院有限公司 | Device and method for monitoring thickness of deposited dust in pipeline |
KR102708233B1 (en) * | 2019-02-15 | 2024-09-23 | 주식회사 케이씨텍 | Substrate polishing system |
CN115284162B (en) * | 2022-07-19 | 2024-03-19 | 华虹半导体(无锡)有限公司 | Method for monitoring physical properties of dielectric layer and semiconductor chip performance |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5290396A (en) * | 1991-06-06 | 1994-03-01 | Lsi Logic Corporation | Trench planarization techniques |
US5433651A (en) * | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
EP0738561B1 (en) * | 1995-03-28 | 2002-01-23 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection and monitoring for chemical mechanical polishing operations |
US5835221A (en) * | 1995-10-16 | 1998-11-10 | Lucent Technologies Inc. | Process for fabricating a device using polarized light to determine film thickness |
-
1998
- 1998-08-03 TW TW087112772A patent/TW374050B/en active
- 1998-08-14 JP JP2000519266A patent/JP2001522139A/en not_active Withdrawn
- 1998-08-14 EP EP98939950A patent/EP1027576A1/en not_active Withdrawn
- 1998-08-14 WO PCT/US1998/016902 patent/WO1999023449A1/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI574787B (en) * | 2011-04-28 | 2017-03-21 | 應用材料股份有限公司 | Varying coefficients and functions for polishing control |
Also Published As
Publication number | Publication date |
---|---|
EP1027576A1 (en) | 2000-08-16 |
JP2001522139A (en) | 2001-11-13 |
WO1999023449A1 (en) | 1999-05-14 |
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