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TW365053B - Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure - Google Patents

Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure

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Publication number
TW365053B
TW365053B TW087108102A TW87108102A TW365053B TW 365053 B TW365053 B TW 365053B TW 087108102 A TW087108102 A TW 087108102A TW 87108102 A TW87108102 A TW 87108102A TW 365053 B TW365053 B TW 365053B
Authority
TW
Taiwan
Prior art keywords
dielectric
low resistance
oxide layer
layer
inter
Prior art date
Application number
TW087108102A
Other languages
Chinese (zh)
Inventor
Yau-Yi Cheng
Shyn-Ming Jang
Chia-Shiung Tsai
Chung-Shi Liu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087108102A priority Critical patent/TW365053B/en
Application granted granted Critical
Publication of TW365053B publication Critical patent/TW365053B/en

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A kind of method for improving adhesion between low resistance dielectric and oxide layer which forms a nitride silicide layer on the interface of oxide layer and low resistance SOP layer so as to increase the adhesion between the oxide layer and the dielectric layer composed of the low resistance SOP. And, based on the theorem, in the multi-layer metalization process, employing nitride silicide to cover the SOP layer on the upper and lower portions so as to form the inter-metal dielectric in the sandwich structure.
TW087108102A 1998-05-25 1998-05-25 Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure TW365053B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087108102A TW365053B (en) 1998-05-25 1998-05-25 Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087108102A TW365053B (en) 1998-05-25 1998-05-25 Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure

Publications (1)

Publication Number Publication Date
TW365053B true TW365053B (en) 1999-07-21

Family

ID=57941030

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087108102A TW365053B (en) 1998-05-25 1998-05-25 Method for improving adhesion between low resistance dielectric and oxide layer and the forming method of inter-metal dielectric in sandwich structure

Country Status (1)

Country Link
TW (1) TW365053B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821566B2 (en) 1999-09-07 2004-11-23 Tokyo Electron Limited Method and apparatus for forming insulating film containing silicon oxy-nitride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821566B2 (en) 1999-09-07 2004-11-23 Tokyo Electron Limited Method and apparatus for forming insulating film containing silicon oxy-nitride

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Legal Events

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