[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TW348285B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
TW348285B
TW348285B TW085114846A TW85114846A TW348285B TW 348285 B TW348285 B TW 348285B TW 085114846 A TW085114846 A TW 085114846A TW 85114846 A TW85114846 A TW 85114846A TW 348285 B TW348285 B TW 348285B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabricating semiconductor
tungsten silicide
fabricating
carrying
Prior art date
Application number
TW085114846A
Other languages
Chinese (zh)
Inventor
Moom Hong-Bae
Ku Bon-Youl
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW348285B publication Critical patent/TW348285B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A method of fabricating a semiconductor device, which comprises the steps of depositing tungsten silicide, forming an oxide layer on the tungsten silicide, and carrying out subsequent processes.
TW085114846A 1996-06-27 1996-12-02 Method of fabricating semiconductor device TW348285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024616A KR100219416B1 (en) 1996-06-27 1996-06-27 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
TW348285B true TW348285B (en) 1998-12-21

Family

ID=19463951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114846A TW348285B (en) 1996-06-27 1996-12-02 Method of fabricating semiconductor device

Country Status (3)

Country Link
JP (1) JP3121777B2 (en)
KR (1) KR100219416B1 (en)
TW (1) TW348285B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100482751B1 (en) 2002-12-27 2005-04-14 주식회사 하이닉스반도체 Method of manufacturing semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227060A (en) * 1987-03-17 1988-09-21 Fujitsu Ltd Manufacture of semiconductor device
JPS6442175A (en) * 1987-08-07 1989-02-14 Fujitsu Ltd Manufacture of semiconductor device
JPH047826A (en) * 1990-04-25 1992-01-13 Fuji Xerox Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
KR100219416B1 (en) 1999-09-01
JP3121777B2 (en) 2001-01-09
KR980005556A (en) 1998-03-30
JPH1050704A (en) 1998-02-20

Similar Documents

Publication Publication Date Title
TW344897B (en) A process for forming gate oxides possessing different thicknesses on a semiconductor substrate
EP0951057A4 (en) Substrate flattening method, and film-coated substrate and semiconductor device manufacturing method
TW338847B (en) Semiconductor device with isolation insulating film tapered and method of manufacturing the same
TW353215B (en) Novel shallow trench isolation technique
TW358992B (en) Semiconductor device and method of fabricating the same
TW344892B (en) Method of forming a semiconductor metallization system and structure therefor
AU1176199A (en) Aligner, exposure method and device manufacturing method
EP0676796A3 (en) Semiconductor substrate and a method for manufacturing the same.
AU5537098A (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
EP0782181A3 (en) Method of manufacturing VDMOS with a termination structure
TW373256B (en) A semiconductor device having discontinuous insulating regions and the manufacturing method thereof
EP0634788A3 (en) Method of manufacturing semiconductor device utilizing selective CVD method.
AU743048C (en) Deposited film forming process, deposited film forming apparatus and process for manufacturing semiconductor element
AU1262699A (en) Stage device and method of manufacturing the same, and aligner and method of manufacturing the same
EP0666336A4 (en) High melting point metallic silicide target and method for producing the same, high melting point metallic silicide film and semiconductor device.
MY118901A (en) Method for manufacturing a photoresist pattern defining a small opening and method for manufacturing semiconductor device using the same
TW358986B (en) Metal layer patterns of a semiconductor device and a method for forming the same
TW357413B (en) Manufacturing process of transistors
TW356586B (en) Semiconductor device having conductive layer and manufacturing method thereof
TW348285B (en) Method of fabricating semiconductor device
TW345695B (en) Process for producing gate oxide layer
EP0607820A3 (en) Method for producing semiconductor device having metal silicide layer on diffusion region.
TW350999B (en) Method for forming metal lines of semiconductor device
TW337610B (en) Structure with reduced stress between a spin-on-glass layer and a metal layer and process for producing the same
EP0638937A3 (en) Ohmic electrode, its fabricating method and semiconductor device using this electrode.

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees