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Internal Circuitry In Semiconductor Integrated Circuit Devices
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Abstract
A manufacturing method of metallization for IC includes following steps: - Form electrical device on semiconductor substrate, that electrical device includes conductive area; - Deposit a dielectric layer, and planarization that dielectric; - Use lithographic and etching technology to etch dielectric layer to form hole till the conductive area; - Form barrier metal layer; - Form buffer metal layer; - Form stuffing metal layer; - Use etching technology to proceed etching back on stuffing metal layer to form metal stud inside the hole; - Form 1st metal layer, and use lithographic and etching technology to etch 1st metal layer, buffer metal layer and barrier metal layer to finish metallization of IC.
TW086107268A1997-05-231997-05-23The manufacturing method of metallization for IC
TW327253B
(en)