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TW202433693A - Electronic package and manufacturing method thereof - Google Patents

Electronic package and manufacturing method thereof Download PDF

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Publication number
TW202433693A
TW202433693A TW112104822A TW112104822A TW202433693A TW 202433693 A TW202433693 A TW 202433693A TW 112104822 A TW112104822 A TW 112104822A TW 112104822 A TW112104822 A TW 112104822A TW 202433693 A TW202433693 A TW 202433693A
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TW
Taiwan
Prior art keywords
heat dissipation
insulating material
dissipation structure
electronic component
carrier
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TW112104822A
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Chinese (zh)
Inventor
陳盈儒
陳敏堯
林松焜
張垂弘
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大陸商芯愛科技(南京)有限公司
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Application filed by 大陸商芯愛科技(南京)有限公司 filed Critical 大陸商芯愛科技(南京)有限公司
Priority to TW112104822A priority Critical patent/TW202433693A/en
Priority to CN202310186698.XA priority patent/CN118522705A/en
Publication of TW202433693A publication Critical patent/TW202433693A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427Cooling by change of state, e.g. use of heat pipes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An electronic package is provided, in which a heat dissipation structure covers an electronic component disposed on a carrier, wherein the heat dissipation structure is made by a method of injecting insulating material, and the heat dissipation structure is embedded with a phase change material object exposed from at least one opening formed on the heat dissipation structure. Therefore, the heat dissipation structure is formed by insulating material to reduce weight of the heat dissipation structure.

Description

電子封裝件及其製法 Electronic packaging and its manufacturing method

本發明係有關一種半導體封裝製程,尤指一種具散熱結構之電子封裝件及其製法。 The present invention relates to a semiconductor packaging process, in particular to an electronic packaging component with a heat dissipation structure and its manufacturing method.

隨著電子產品在功能及處理速度之需求的提升,作為電子產品之核心組件的半導體晶片需具有更高密度之電子元件(Electronic Components)及電子電路(Electronic Circuits),故半導體晶片在運作時將隨之產生更大量的熱能。 As the demand for electronic products in terms of functions and processing speed increases, semiconductor chips, as the core components of electronic products, need to have higher density electronic components and electronic circuits, so semiconductor chips will generate more heat during operation.

因此,為了迅速將熱能散逸至外部,業界通常在半導體封裝件中配置散熱片(Heat Sink或Heat Spreader),該散熱片通常藉由散熱膠,如導熱介面材(Thermal Interface Material,簡稱TIM),結合至半導體晶片背面,以藉散熱膠與散熱片逸散出半導體晶片所產生之熱量。 Therefore, in order to quickly dissipate heat to the outside, the industry usually configures a heat sink or heat spreader in the semiconductor package. The heat sink is usually bonded to the back of the semiconductor chip through a heat sink, such as a thermal interface material (TIM), so that the heat generated by the semiconductor chip can be dissipated through the heat sink and the heat sink.

如圖1所示,習知半導體封裝件1之製法係先將一半導體晶片11以其作用面11a利用覆晶接合方式(即透過導電凸塊110與底膠111)設於一封裝基板10上,再將一散熱件13以其頂片130藉由TIM層12結 合於該半導體晶片11之非作用面11b上,且該散熱件13之支撐腳131透過黏著層14架設於該封裝基板10上。 As shown in FIG. 1 , the manufacturing method of the known semiconductor package 1 is to first place a semiconductor chip 11 on a package substrate 10 with its active surface 11a by flip chip bonding (i.e., through conductive bumps 110 and bottom glue 111), and then place a heat sink 13 with its top sheet 130 bonded to the inactive surface 11b of the semiconductor chip 11 through a TIM layer 12, and the support legs 131 of the heat sink 13 are mounted on the package substrate 10 through an adhesive layer 14.

於運作時,該半導體晶片11所產生之熱能係經由該非作用面11b、TIM層12而傳導至該散熱件13之頂片130以散熱至該半導體封裝件1之外部。 During operation, the heat energy generated by the semiconductor chip 11 is transferred to the top plate 130 of the heat sink 13 through the inactive surface 11b and the TIM layer 12 to dissipate the heat to the outside of the semiconductor package 1.

惟,習知半導體封裝件1中,係採用金屬框架作為該散熱件13,因而需採用蝕刻金屬及/或電鍍金屬等繁瑣製程製作該散熱件13,故該散熱件13不僅製作成本極高,且重量難以減輕,致使該半導體封裝件1不利於符合輕巧之需求。 However, in the known semiconductor package 1, a metal frame is used as the heat sink 13, so a complicated process such as etching metal and/or electroplating metal is required to manufacture the heat sink 13. Therefore, the heat sink 13 is not only very expensive to manufacture, but also difficult to reduce in weight, making the semiconductor package 1 not conducive to meeting the demand for lightness.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the above-mentioned problems of known technology has become a difficult problem that the industry needs to overcome urgently.

鑑於上述習知技術之種種缺失,本發明提供一種電子封裝件,係包括:載板,係具有至少一線路層;電子元件,係設於該載板上並電性連接該線路層;以及絕緣材散熱結構,係設於該載板上並遮蓋該電子元件,其中,該絕緣材散熱結構係埋設有一相變材物體且具有至少一外露該變相材物體之開口。 In view of the various deficiencies of the above-mentioned prior art, the present invention provides an electronic package, comprising: a carrier having at least one circuit layer; an electronic component disposed on the carrier and electrically connected to the circuit layer; and an insulating material heat dissipation structure disposed on the carrier and covering the electronic component, wherein the insulating material heat dissipation structure is embedded with a phase change material object and has at least one opening exposing the phase change material object.

本發明亦提供一種電子封裝件之製法,係包括:藉由模注絕緣材方式製作絕緣材散熱結構,其中,該絕緣材散熱結構係埋設有一相變材物體且具有至少一外露該變相材物體之開口;以及將該絕緣材散熱結構設於一具有至少一線路層之載板上,其中,該載板上係設有至少一電性連接該線路層之電子元件,以令該絕緣材散熱結構遮蓋該電子元件。 The present invention also provides a method for manufacturing an electronic package, which includes: manufacturing an insulating material heat dissipation structure by injection molding an insulating material, wherein the insulating material heat dissipation structure is embedded with a phase change material object and has at least one opening exposing the phase change material object; and arranging the insulating material heat dissipation structure on a carrier having at least one circuit layer, wherein at least one electronic component electrically connected to the circuit layer is arranged on the carrier, so that the insulating material heat dissipation structure covers the electronic component.

前述之電子封裝件及其製法中,該絕緣材散熱結構係接觸該電子元件。 In the aforementioned electronic package and its manufacturing method, the insulating material heat dissipation structure is in contact with the electronic component.

前述之電子封裝件及其製法中,該絕緣材散熱結構係具有屏蔽層,以於該絕緣材散熱結構設於該載板上後,該屏蔽層位於該變相材物體與該電子元件之間。 In the aforementioned electronic package and its manufacturing method, the insulating material heat dissipation structure has a shielding layer, so that after the insulating material heat dissipation structure is arranged on the carrier, the shielding layer is located between the phase-changing material object and the electronic component.

前述之電子封裝件及其製法中,該絕緣材散熱結構之製程係包含:藉由模注絕緣材方式分別製作第一散熱件與第二散熱件;將該開口形成於該第一散熱件上;以及將該第一散熱件與第二散熱件相接合,使該變相材物體夾設於該第一散熱件與該第二散熱件之間,其中,該絕緣材散熱結構係以該第二散熱件設於該載板上,使該第二散熱件遮蓋該電子元件。 In the aforementioned electronic package and its manufacturing method, the manufacturing process of the insulating material heat dissipation structure includes: manufacturing a first heat dissipation member and a second heat dissipation member respectively by injection molding an insulating material; forming the opening on the first heat dissipation member; and joining the first heat dissipation member and the second heat dissipation member so that the phase-changing material object is sandwiched between the first heat dissipation member and the second heat dissipation member, wherein the insulating material heat dissipation structure is provided with the second heat dissipation member on the carrier so that the second heat dissipation member covers the electronic component.

前述之電子封裝件及其製法中,該相變材物體係包含石蠟、有機酸、無機鹽或鹽水化合物。 In the aforementioned electronic package and its manufacturing method, the phase change material object includes wax, organic acid, inorganic salt or saline compound.

由上可知,本發明之電子封裝件及其製法,主要藉由模注絕緣材方式製作該絕緣材散熱結構,以簡易製程,故相較於習知金屬散熱件,本發明不僅能大幅降低該絕緣材散熱結構之製作成本,且能減輕該絕緣材散熱結構之重量,以利於該電子封裝件符合輕巧之需求。 As can be seen from the above, the electronic package and its manufacturing method of the present invention mainly manufacture the insulating material heat dissipation structure by injection molding insulating material to simplify the manufacturing process. Therefore, compared with the conventional metal heat sink, the present invention can not only significantly reduce the manufacturing cost of the insulating material heat dissipation structure, but also reduce the weight of the insulating material heat dissipation structure, so that the electronic package meets the demand for lightness.

1:半導體封裝件 1:Semiconductor packages

10:封裝基板 10: Packaging substrate

11:半導體晶片 11: Semiconductor chip

11a,21a:作用面 11a, 21a: Action surface

11b,21b:非作用面 11b, 21b: non-active surface

110,210:導電凸塊 110,210: Conductive bumps

111,211:底膠 111,211: Base glue

12:TIM層 12: TIM layer

13:散熱件 13: Heat sink

130:頂片 130: Top piece

131,400:支撐腳 131,400: Foot support

14,24:黏著層 14,24: Adhesive layer

2:電子封裝件 2: Electronic packaging components

2a:絕緣材散熱結構 2a: Insulation material heat dissipation structure

2b:基板結構 2b: Substrate structure

20:載板 20: Carrier board

200:絕緣層 200: Insulation layer

201:線路層 201: Circuit layer

21:電子元件 21: Electronic components

22:相變材物體 22: Phase change material

23:屏蔽層 23: Shielding layer

3:散熱架體 3: Heat dissipation frame

3a:支架 3a: Bracket

30:第一散熱件 30: First heat sink

30a,402:絕緣材 30a,402: Insulation materials

300:開口 300: Opening

301:凸部 301: convex part

40:第二散熱件 40: Second heat sink

40a:片體 40a: Sheet

401:凹部 401: Concave part

70,80:第一模件 70,80: First module

71,81:第二模件 71,81: Second module

9,9a:承載件 9,9a: Carrier

S:容置空間 S: Storage space

L:切割路徑 L: cutting path

圖1係為習知半導體封裝件之剖視示意圖。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package.

圖2A至圖2H係為本發明之電子封裝件之製法之剖面示意圖。 Figures 2A to 2H are cross-sectional schematic diagrams of the manufacturing method of the electronic package of the present invention.

圖2D-1係為圖2D之另一態樣之上視示意圖。 Figure 2D-1 is a top view schematic diagram of another embodiment of Figure 2D.

圖2E-1係為圖2E之另一態樣之上視示意圖。 Figure 2E-1 is a top view schematic diagram of another embodiment of Figure 2E.

圖3A至圖3B係為本發明之電子封裝件之絕緣材散熱結構之第一散熱件之製程之剖面示意圖。 Figures 3A to 3B are schematic cross-sectional views of the manufacturing process of the first heat sink of the insulating material heat sink structure of the electronic package of the present invention.

圖4A至圖4B係為本發明之電子封裝件之絕緣材散熱結構之第二散熱件之製程之剖面示意圖。 Figures 4A to 4B are cross-sectional schematic diagrams of the manufacturing process of the second heat sink of the insulating material heat dissipation structure of the electronic package of the present invention.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following is a specific and concrete example to illustrate the implementation of the present invention. People familiar with this technology can easily understand other advantages and effects of the present invention from the content disclosed in this manual.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this specification are only used to match the contents disclosed in the specification for understanding and reading by people familiar with this technology, and are not used to limit the restrictive conditions for the implementation of the present invention. Therefore, they have no substantial technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the effects and purposes that can be achieved by the present invention. At the same time, the terms such as "above", "first", "second" and "one" used in this specification are only for the convenience of description, and are not used to limit the scope of implementation of the present invention. Changes or adjustments in their relative relationships shall also be regarded as the scope of implementation of the present invention without substantially changing the technical content.

圖2A至圖2H係為本發明之電子封裝件2之製法之剖面示意圖。 Figures 2A to 2H are cross-sectional schematic diagrams of the manufacturing method of the electronic package 2 of the present invention.

如圖2A所示,提供一具有複數凸部301之第一散熱件30與一具有複數凹部401之第二散熱件40。 As shown in FIG. 2A , a first heat sink 30 having a plurality of protrusions 301 and a second heat sink 40 having a plurality of concave portions 401 are provided.

於本實施例中,該第一散熱件30係為一板體,且該第二散熱件40係為一連接有複數支撐腳400之片體,以令該凹部401形成於該支撐腳400之其中一側。例如,該第二散熱件40藉由該複數支撐腳400圍繞而呈罩蓋狀以形成一容置空間S。 In this embodiment, the first heat sink 30 is a plate, and the second heat sink 40 is a sheet connected to a plurality of supporting legs 400, so that the recess 401 is formed on one side of the supporting legs 400. For example, the second heat sink 40 is surrounded by the plurality of supporting legs 400 to form a cover shape to form a containing space S.

再者,該第一散熱件30係為絕緣材,如預浸材(Prepreg,簡稱PP)、環氧樹脂(epoxy)之封裝膠體、封裝材(molding compound)或其它塑膠材質。例如,該第一散熱件30可採用模注(Injection molding)方式製作,如圖3A所示之第一模件70與第二模件71,並於脫模後,移除多餘之絕緣材30a,如圖3B所示。 Furthermore, the first heat sink 30 is an insulating material, such as prepreg (PP), epoxy packaging colloid, molding compound or other plastic materials. For example, the first heat sink 30 can be manufactured by injection molding, such as the first mold 70 and the second mold 71 shown in FIG. 3A, and after demolding, the excess insulating material 30a is removed, as shown in FIG. 3B.

又,該第二散熱件40係為絕緣材,如預浸材(PP)、環氧樹脂(epoxy)之封裝膠體、封裝材或其它塑膠材質。例如,該第二散熱件40可採用模注方式製作,如圖4A所示之第一模件80與第二模件81,並於脫模後,移除多餘之絕緣材402,如圖4B所示。應可理解地,該第一散熱件30與第二散熱件40之材質可相同或相異。 Furthermore, the second heat sink 40 is an insulating material, such as prepreg (PP), epoxy encapsulation colloid, encapsulation material or other plastic material. For example, the second heat sink 40 can be made by injection molding, such as the first module 80 and the second module 81 shown in FIG. 4A, and after demolding, the excess insulating material 402 is removed, as shown in FIG. 4B. It should be understood that the materials of the first heat sink 30 and the second heat sink 40 can be the same or different.

如圖2B至圖2C所示,先於該第一散熱件30上形成複數開口300,再藉由令相變材(Phase change material,簡稱PCM)物體(Mass)22位於該第一散熱件30和第二散熱件40之間,以壓合該第一散熱件30與第二散熱件40,以令該相變材物體22夾設於該第一散熱件30與第二散熱件40之間,使該相變材物體22外露於該複數開口300。 As shown in FIG. 2B to FIG. 2C, a plurality of openings 300 are first formed on the first heat sink 30, and then a phase change material (PCM) object (Mass) 22 is placed between the first heat sink 30 and the second heat sink 40 to press the first heat sink 30 and the second heat sink 40, so that the PCM object 22 is sandwiched between the first heat sink 30 and the second heat sink 40, and the PCM object 22 is exposed outside the plurality of openings 300.

於本實施例中,該複數開口300係貫穿該第一散熱件30之片體,且該第一散熱件30以其凸部301插入該第二散熱件40之凹部401中,使該第一與第二散熱件30,40相接合。 In this embodiment, the plurality of openings 300 penetrate the sheet of the first heat sink 30, and the first heat sink 30 is inserted into the recess 401 of the second heat sink 40 with its protrusion 301, so that the first and second heat sinks 30, 40 are connected.

再者,該相變材物體22係為類薄板(like sheet)形體,且形成該相變材物體22之材質係為石蠟(Paraffin)、有機酸(organic acid)、無機鹽(inorganic salt)、鹽水化合物(salt water compound)或其它相變材。 Furthermore, the phase change material object 22 is in the form of a sheet, and the material forming the phase change material object 22 is paraffin, organic acid, inorganic salt, salt water compound or other phase change materials.

如圖2D所示,於該第二散熱件40上形成一屏蔽層23,以形成一絕緣材散熱結構2a。 As shown in FIG. 2D , a shielding layer 23 is formed on the second heat sink 40 to form an insulating material heat sink structure 2a.

於本實施例中,該屏蔽層23係形成於該第二散熱件40之容置空間S內之片體40a與該支撐腳400之表面上。例如,該屏蔽層23係包含金屬材,如採用電鍍如金(Au)、銀(Ag)、鎳(Ni)或其它之金屬層之方式形成於該第二散熱件40上。 In this embodiment, the shielding layer 23 is formed on the sheet 40a in the accommodation space S of the second heat sink 40 and on the surface of the supporting foot 400. For example, the shielding layer 23 includes a metal material, such as a metal layer formed on the second heat sink 40 by electroplating such as gold (Au), silver (Ag), nickel (Ni) or other metal layers.

再者,藉由模注方式製作該第一散熱件30與第二散熱件40可形成整版面(panel)規格或晶圓級(wafer level)規格,如圖2D-1所示之散熱架體3,其藉由複數支架3a連接複數陣列排設之絕緣材散熱結構2a。 Furthermore, the first heat sink 30 and the second heat sink 40 can be manufactured by injection molding to form a full panel specification or a wafer level specification, such as the heat sink frame 3 shown in FIG. 2D-1, which is connected to a plurality of array-arranged insulating material heat sink structures 2a by a plurality of brackets 3a.

或者,可依需求將單一絕緣材散熱結構2a以其第一散熱件30置放於單一承載件9上,以利於輸送至後續製程所用之機台,如圖2E所示。應可理解地,如圖2E-1所示,亦可將複數絕緣材散熱結構2a陣列排設於一整版面規格或晶圓級規格之承載件9a上。 Alternatively, a single insulating material heat dissipation structure 2a can be placed on a single carrier 9 with its first heat dissipation component 30 as required, so as to facilitate transportation to the machine used in the subsequent process, as shown in FIG2E. It should be understood that, as shown in FIG2E-1, multiple insulating material heat dissipation structures 2a can also be arranged in an array on a carrier 9a of full-page specifications or wafer-level specifications.

如圖2F至圖2G所示,提供一整版面規格或晶圓級規格之基板結構2b,其包含複數相鄰接之載板20,再於各該載板20上設置至少一電子元件21。接著,接續圖2E-1所示之製程,自該承載件9a上移取各該絕緣材散熱結構2a,以將各該絕緣材散熱結構2a分別對應放置於各該載板20上。 As shown in FIG. 2F to FIG. 2G, a substrate structure 2b of full-page specification or wafer-level specification is provided, which includes a plurality of adjacent carriers 20, and at least one electronic component 21 is arranged on each of the carriers 20. Then, following the process shown in FIG. 2E-1, each of the insulating material heat dissipation structures 2a is removed from the carrier 9a, so as to place each of the insulating material heat dissipation structures 2a on each of the carriers 20 respectively.

於本實施例中,該載板20例如為具有核心層與線路結構之封裝基板、無核心層(coreless)形式線路結構之封裝基板、具導電矽穿孔(Through-silicon via,簡稱TSV)之矽中介板(Through Silicon interposer,簡稱TSI)或其它板型,其包含至少一絕緣層200及至少一結合該絕緣層200之線路層201,如至少一扇出(fan out)型重佈線路層(redistribution layer,簡稱RDL)。例如,形成該線路層201之材質係為銅,且形成該絕緣層200之材質係為如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)等之介電材。應可理解地,該基板結構2b亦可為單一載板20形式(圖未示)或為其它承載晶片之板材,如導線架(lead frame)、晶圓(wafer)、或其它具有金屬佈線(routing)之板體等,並不限於上述。 In this embodiment, the carrier 20 is, for example, a packaging substrate having a core layer and a circuit structure, a packaging substrate having a coreless circuit structure, a silicon interposer (TSI) with conductive through-silicon vias (TSV), or other board types, which includes at least one insulation layer 200 and at least one circuit layer 201 combined with the insulation layer 200, such as at least one fan-out type redistribution layer (RDL). For example, the material forming the circuit layer 201 is copper, and the material forming the insulating layer 200 is a dielectric material such as polybenzoxazole (PBO), polyimide (PI), prepreg (PP), etc. It should be understood that the substrate structure 2b can also be a single carrier 20 (not shown) or other chip-carrying plate, such as a lead frame, a wafer, or other plates with metal routing, etc., but is not limited to the above.

再者,該電子元件21係為主動元件、被動元件或其組合者,其中,該主動元件係例如半導體晶片,而該被動元件係例如電阻、電容及電感。於本實施例中,該電子元件21係為半導體晶片,其具有相對之作用面21a與非作用面21b,並使該作用面21a藉由複數如銲錫材料、金屬柱(pillar)或其它等之導電凸塊210以覆晶方式設於該載板20之線路層上並電性連接該線路層201,且以底膠211包覆該些導電凸塊210;或者,該電子元件21可藉由複數銲線(圖未示)以打線方式電性連接該載板20之線路層201;亦或,該電子元件21可直接接觸該載板20之線路層201。因此,可於該載板20上接置所需類型及數量之電子元件21,以提升其電性功能,且有關電子元件21電性連接承載結構20之方式繁多,並不限於上述。 Furthermore, the electronic component 21 is an active component, a passive component or a combination thereof, wherein the active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor and an inductor. In the present embodiment, the electronic component 21 is a semiconductor chip having an active surface 21a and an inactive surface 21b opposite to each other, and the active surface 21a is disposed on the circuit layer of the carrier 20 in a flip-chip manner through a plurality of conductive bumps 210 such as solder materials, metal pillars or other materials and electrically connected to the circuit layer 201, and the conductive bumps 210 are coated with a primer 211; alternatively, the electronic component 21 can be electrically connected to the circuit layer 201 of the carrier 20 in a wire bonding manner through a plurality of welding wires (not shown); or, the electronic component 21 can directly contact the circuit layer 201 of the carrier 20. Therefore, the required type and quantity of electronic components 21 can be placed on the carrier 20 to enhance its electrical performance, and there are many ways to electrically connect the electronic components 21 to the carrier structure 20, which are not limited to the above.

又,該絕緣材散熱結構2a係以其第二散熱件40之支撐腳400藉由黏著層24結合於該載板20上,以令該電子元件21位於該容置空間S內,使該第二散熱件40罩蓋該電子元件21。例如,該屏蔽層23係位於該第二散熱件40(該變相材物體22)與該電子元件21之間,以遮蓋該電子元件21,使該屏蔽層23能防止該電子元件21受外界之電磁干擾(Electromagnetic Interference,簡稱EMI)。 Furthermore, the insulating material heat dissipation structure 2a is bonded to the carrier 20 by the supporting foot 400 of the second heat dissipation component 40 through the adhesive layer 24, so that the electronic component 21 is located in the accommodation space S, and the second heat dissipation component 40 covers the electronic component 21. For example, the shielding layer 23 is located between the second heat dissipation component 40 (the phase-changing material object 22) and the electronic component 21 to cover the electronic component 21, so that the shielding layer 23 can prevent the electronic component 21 from being subjected to external electromagnetic interference (Electromagnetic Interference, referred to as EMI).

另外,該絕緣材散熱結構2a係以其第二散熱件40之片體40a(或該屏蔽層23)接觸該電子元件21之非作用面21b。應可理解地,該絕緣材散熱結構2a亦可未接觸該電子元件21,即該絕緣材散熱結構2a與該電子元件21之非作用面21b相分離。 In addition, the insulating material heat dissipation structure 2a contacts the inactive surface 21b of the electronic component 21 with the sheet 40a of the second heat dissipation member 40 (or the shielding layer 23). It should be understood that the insulating material heat dissipation structure 2a may not contact the electronic component 21, that is, the insulating material heat dissipation structure 2a is separated from the inactive surface 21b of the electronic component 21.

如圖2H所示,沿如圖2G所示之切割路徑L(即各該載板20之間的交界)進行切單製程,以獲取該電子封裝件2。 As shown in FIG2H, a singulation process is performed along the cutting path L shown in FIG2G (i.e., the boundary between each carrier 20) to obtain the electronic package 2.

於本實施例中,該電子元件21所產生之熱能之散熱路徑係由該第二散熱件40經由該相變材物體22,再經由該開口300將熱能散出至外界環境。當該相變材物體22吸收來自該電子元件21之熱能時,該相變材物體22會由固態轉變成液態,且當該相變材物體22經由該開口300將熱能散逸時,該相變材物體22會由液態轉變成固態。 In this embodiment, the heat dissipation path of the heat energy generated by the electronic component 21 is from the second heat sink 40 through the phase change material 22, and then dissipates the heat energy to the external environment through the opening 300. When the phase change material 22 absorbs the heat energy from the electronic component 21, the phase change material 22 will change from solid to liquid, and when the phase change material 22 dissipates the heat energy through the opening 300, the phase change material 22 will change from liquid to solid.

因此,本發明之製法主要藉由模注絕緣材方式製作該第一散熱件30與第二散熱件40,以簡易製程,故相較於習知金屬散熱件,本發明之製法不僅能大幅降低該絕緣材散熱結構之製作成本,且能減輕該絕緣材散熱結構2a之重量,以利於該電子封裝件2符合輕巧之需求。 Therefore, the manufacturing method of the present invention mainly manufactures the first heat sink 30 and the second heat sink 40 by injection molding of insulating materials to simplify the manufacturing process. Therefore, compared with the conventional metal heat sink, the manufacturing method of the present invention can not only significantly reduce the manufacturing cost of the insulating material heat sink structure, but also reduce the weight of the insulating material heat sink structure 2a, so that the electronic package 2 meets the requirement of being lightweight.

再者,該電子封裝件2藉由該相變材物體22之設計,以當該相變材物體22吸收來自該電子元件21之熱能時,該電子元件21之溫度將保持穩定(即維持於所需之溫度),此時,該第一散熱件30之開口300係作為該相變材物體22之液態擴散之流向路徑及釋壓空間,以減低該相變材物體22施加於該第二散熱件40(或該電子元件21)上之壓力,因而有利於提升該電子封裝件2之可靠度。 Furthermore, the electronic package 2 is designed with the phase change material object 22 so that when the phase change material object 22 absorbs the heat energy from the electronic component 21, the temperature of the electronic component 21 will remain stable (i.e. maintained at the required temperature). At this time, the opening 300 of the first heat sink 30 serves as the flow path and pressure release space for the liquid diffusion of the phase change material object 22 to reduce the pressure applied by the phase change material object 22 on the second heat sink 40 (or the electronic component 21), thereby helping to improve the reliability of the electronic package 2.

又,該屏蔽層23不僅能防止該電子元件21受外界之電磁干擾,且能作為導熱結構,以將該電子元件21之熱能傳遞至該相變材物體22,使該相變材物體22發生相變(phase transformation),即該相變材物體22由固態轉變成液態。 In addition, the shielding layer 23 can not only prevent the electronic component 21 from being disturbed by external electromagnetic interference, but also serve as a heat-conducting structure to transfer the heat energy of the electronic component 21 to the phase change material 22, causing the phase change material 22 to undergo a phase transformation, that is, the phase change material 22 changes from a solid state to a liquid state.

本發明提供一種電子封裝件2係包括:一具有至少一線路層201之載板20、至少一設於該載板20上並電性連接該線路層201之電子元件21、以及一設於該載板20上以遮蓋該電子元件21之絕緣材散熱結構2a。 The present invention provides an electronic package 2 comprising: a carrier 20 having at least one circuit layer 201, at least one electronic component 21 disposed on the carrier 20 and electrically connected to the circuit layer 201, and an insulating material heat dissipation structure 2a disposed on the carrier 20 to cover the electronic component 21.

所述之絕緣材散熱結構2a係埋設有一相變材物體22且具有至少一外露該變相材物體22之開口300。 The insulating material heat dissipation structure 2a is embedded with a phase change material object 22 and has at least one opening 300 exposing the phase change material object 22.

於一實施例中,該絕緣材散熱結構2a係接觸該電子元件21。 In one embodiment, the insulating material heat dissipation structure 2a contacts the electronic component 21.

於一實施例中,該絕緣材散熱結構2a係具有一屏蔽層23,且該屏蔽層23係位於該變相材物體22與該電子元件21之間。 In one embodiment, the insulating material heat dissipation structure 2a has a shielding layer 23, and the shielding layer 23 is located between the phase-changing material object 22 and the electronic component 21.

於一實施例中,該絕緣材散熱結構2a係包含相接合之第一散熱件30與第二散熱件40,以令該變相材物體22夾設於該第一散熱件30 與該第二散熱件40之間,且該開口300係形成於該第一散熱件30上,並使該第二散熱件40設於該載板20上以遮蓋該電子元件21。 In one embodiment, the insulating material heat dissipation structure 2a includes a first heat dissipation member 30 and a second heat dissipation member 40 connected to each other, so that the phase-changing material object 22 is sandwiched between the first heat dissipation member 30 and the second heat dissipation member 40, and the opening 300 is formed on the first heat dissipation member 30, and the second heat dissipation member 40 is disposed on the carrier 20 to cover the electronic component 21.

於一實施例中,該相變材物體22係包含石蠟、有機酸、無機鹽或鹽水化合物。 In one embodiment, the phase change material 22 includes wax, organic acid, inorganic salt or saline compound.

綜上所述,本發明之電子封裝件及其製法,主要藉由模注絕緣材方式製作該絕緣材散熱結構,以降低該絕緣材散熱結構之製作成本,且減輕該絕緣材散熱結構之重量,使該電子封裝件利於符合輕巧之需求。 In summary, the electronic package and its manufacturing method of the present invention mainly manufacture the insulating material heat dissipation structure by injection molding the insulating material, so as to reduce the manufacturing cost of the insulating material heat dissipation structure and reduce the weight of the insulating material heat dissipation structure, so that the electronic package can meet the demand of being lightweight.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to illustrate the principles and effects of the present invention, but are not used to limit the present invention. Anyone familiar with this technology can modify the above embodiments without violating the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the scope of the patent application described below.

2:電子封裝件 2: Electronic packaging components

2a:絕緣材散熱結構 2a: Insulation material heat dissipation structure

20:載板 20: Carrier board

201:線路層 201: Circuit layer

21:電子元件 21: Electronic components

210:導電凸塊 210: Conductive bump

211:底膠 211: Base glue

22:相變材物體 22: Phase change material

23:屏蔽層 23: Shielding layer

24:黏著層 24: Adhesive layer

30:第一散熱件 30: First heat sink

300:開口 300: Opening

40:第二散熱件 40: Second heat sink

Claims (10)

一種電子封裝件,係包括: An electronic package includes: 載板,係具有至少一線路層; The carrier board has at least one circuit layer; 電子元件,係設於該載板上並電性連接該線路層;以及 The electronic component is disposed on the carrier and electrically connected to the circuit layer; and 絕緣材散熱結構,係設於該載板上並遮蓋該電子元件,其中,該絕緣材散熱結構係埋設有一相變材物體且具有至少一外露該變相材物體之開口。 The insulating material heat dissipation structure is disposed on the carrier and covers the electronic component, wherein the insulating material heat dissipation structure is embedded with a phase change material object and has at least one opening exposing the phase change material object. 如請求項1所述之電子封裝件,其中,該絕緣材散熱結構係接觸該電子元件。 An electronic package as described in claim 1, wherein the insulating material heat dissipation structure is in contact with the electronic component. 如請求項1所述之電子封裝件,其中,該絕緣材散熱結構係具有屏蔽層,且該屏蔽層係位於該變相材物體與該電子元件之間。 The electronic package as described in claim 1, wherein the insulating material heat dissipation structure has a shielding layer, and the shielding layer is located between the phase-changing material object and the electronic component. 如請求項1所述之電子封裝件,其中,該絕緣材散熱結構係包含相接合之第一散熱件與第二散熱件,以令該變相材物體夾設於該第一散熱件與該第二散熱件之間,且該開口係形成於該第一散熱件上,並使該第二散熱件設於該載板上以遮蓋該電子元件。 The electronic package as described in claim 1, wherein the insulating material heat dissipation structure comprises a first heat dissipation member and a second heat dissipation member connected to each other, so that the phase-changing material object is sandwiched between the first heat dissipation member and the second heat dissipation member, and the opening is formed on the first heat dissipation member, and the second heat dissipation member is disposed on the carrier to cover the electronic component. 如請求項1所述之電子封裝件,其中,該相變材物體係包含石蠟、有機酸、無機鹽或鹽水化合物。 An electronic package as described in claim 1, wherein the phase change material comprises wax, an organic acid, an inorganic salt or a saline compound. 一種電子封裝件之製法,係包括: A method for manufacturing an electronic package includes: 藉由模注絕緣材方式製作絕緣材散熱結構,其中,該絕緣材散熱結構係埋設有一相變材物體且具有至少一外露該變相材物體之開口;以及 An insulating material heat dissipation structure is manufactured by injection molding an insulating material, wherein the insulating material heat dissipation structure is embedded with a phase change material object and has at least one opening exposing the phase change material object; and 將該絕緣材散熱結構設於一具有至少一線路層之載板上,其中,該載板上係設有至少一電性連接該線路層之電子元件,以令該絕緣材散熱結構遮蓋該電子元件。 The insulating material heat dissipation structure is disposed on a carrier having at least one circuit layer, wherein the carrier is provided with at least one electronic component electrically connected to the circuit layer, so that the insulating material heat dissipation structure covers the electronic component. 如請求項6所述之電子封裝件之製法,其中,該絕緣材散熱結構係接觸該電子元件。 A method for manufacturing an electronic package as described in claim 6, wherein the insulating material heat dissipation structure is in contact with the electronic component. 如請求項6所述之電子封裝件之製法,其中,該絕緣材散熱結構係具有屏蔽層,以於該絕緣材散熱結構設於該載板上後,該屏蔽層位於該變相材物體與該電子元件之間。 The method for manufacturing an electronic package as described in claim 6, wherein the insulating material heat dissipation structure has a shielding layer, so that after the insulating material heat dissipation structure is arranged on the carrier, the shielding layer is located between the phase-changing material object and the electronic component. 如請求項6所述之電子封裝件之製法,其中,該絕緣材散熱結構之製作係包含:藉由模注絕緣材方式分別製作第一散熱件與第二散熱件;將該開口形成於該第一散熱件上;以及將該第一散熱件與第二散熱件相接合,使該變相材物體夾設於該第一散熱件與該第二散熱件之間,其中,該絕緣材散熱結構係以該第二散熱件設於該載板上,使該第二散熱件遮蓋該電子元件。 The method for manufacturing an electronic package as described in claim 6, wherein the manufacturing of the insulating material heat dissipation structure includes: manufacturing a first heat dissipation member and a second heat dissipation member respectively by injection molding an insulating material; forming the opening on the first heat dissipation member; and joining the first heat dissipation member and the second heat dissipation member so that the phase-changing material object is sandwiched between the first heat dissipation member and the second heat dissipation member, wherein the insulating material heat dissipation structure is provided on the carrier with the second heat dissipation member so that the second heat dissipation member covers the electronic component. 如請求項6所述之電子封裝件之製法,其中,該相變材物體係包含石蠟、有機酸、無機鹽或鹽水化合物。 A method for manufacturing an electronic package as described in claim 6, wherein the phase change material comprises wax, an organic acid, an inorganic salt or a saline compound.
TW112104822A 2023-02-10 2023-02-10 Electronic package and manufacturing method thereof TW202433693A (en)

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