TW202408034A - Package structure - Google Patents
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- TW202408034A TW202408034A TW111129040A TW111129040A TW202408034A TW 202408034 A TW202408034 A TW 202408034A TW 111129040 A TW111129040 A TW 111129040A TW 111129040 A TW111129040 A TW 111129040A TW 202408034 A TW202408034 A TW 202408034A
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- spacer layer
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- 125000006850 spacer group Chemical group 0.000 claims abstract description 88
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000004806 packaging method and process Methods 0.000 claims description 81
- 235000012431 wafers Nutrition 0.000 claims description 73
- 239000005022 packaging material Substances 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000032798 delamination Effects 0.000 abstract description 12
- 230000000694 effects Effects 0.000 description 5
- 230000006355 external stress Effects 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
Description
本揭示內容係關於一種封裝結構,且特別是一種可增加塑膠封裝材料與晶片座之間具有足夠接觸面積的封裝結構。The present disclosure relates to a packaging structure, and in particular, a packaging structure that can increase a sufficient contact area between a plastic packaging material and a chip holder.
現今半導體封裝產業中,封裝結構的體積因應科技的發展逐漸減小,其中可透過縮小導線架的晶片座的面積、縮小晶片的面積以減小封裝結構的體積。然而,當縮小晶片座的面積的情況下導致晶片邊緣距離晶片座邊緣過近,即晶片座邊緣與晶片邊緣的距離不足,進而導致塑膠封裝材料與晶片座的接觸面積不足。據此,當封裝結構受到應力時,塑膠封裝材料易於晶片座邊緣產生嚴重分層的缺陷。In today's semiconductor packaging industry, the size of the packaging structure is gradually reduced in response to the development of technology. The size of the packaging structure can be reduced by reducing the area of the chip seat of the lead frame and reducing the area of the chip. However, when the area of the chip holder is reduced, the edge of the chip is too close to the edge of the wafer holder, that is, the distance between the edge of the wafer holder and the edge of the chip is insufficient, resulting in insufficient contact area between the plastic packaging material and the wafer holder. Accordingly, when the packaging structure is stressed, the plastic packaging material is prone to serious delamination defects at the edge of the chip holder.
因此,發展一種可降低於受應力時塑膠封裝材料分層風險的封裝結構遂成為產業上重要且急欲解決的問題。Therefore, developing a packaging structure that can reduce the risk of delamination of plastic packaging materials under stress has become an important and urgent problem in the industry.
本揭示內容提供一種封裝結構,透過間隔層可使塑膠封裝材料與晶片座具有足夠的接觸面積,藉以降低於受應力時塑膠封裝材料分層的風險。The present disclosure provides a packaging structure in which the plastic packaging material and the chip holder can have sufficient contact area through the spacer layer, thereby reducing the risk of delamination of the plastic packaging material when subjected to stress.
依據本揭示內容一實施方式提供一種封裝結構,其包含一導線架、至少二晶片、至少一間隔層及一塑膠封裝材料。導線架包含一晶片座。晶片設置於導線架的晶片座上。間隔層設置於晶片的至少一者與晶片座之間。塑膠封裝材料設置於導線架上,並覆蓋晶片。間隔層的複數邊緣中的一者與晶片座的複數邊緣中的一者之間具有一第一最小邊距,晶片的複數邊緣中的一者與晶片座的邊緣中的一者之間具有一第二最小邊距,且第一最小邊距大於第二最小邊距。According to an embodiment of the present disclosure, a packaging structure is provided, which includes a lead frame, at least two chips, at least one spacer layer and a plastic packaging material. The leadframe includes a chip holder. The chip is placed on the chip seat of the lead frame. A spacer layer is provided between at least one of the wafers and the wafer holder. The plastic packaging material is placed on the lead frame and covers the chip. There is a first minimum margin between one of the edges of the spacer layer and one of the edges of the wafer holder, and there is a first minimum edge distance between one of the edges of the wafer and one of the edges of the wafer holder. The second minimum margin, and the first minimum margin is greater than the second minimum margin.
依據前段所述實施方式的封裝結構,其中第一最小邊距可為至少40微米。According to the packaging structure of the embodiment described in the previous paragraph, the first minimum margin may be at least 40 microns.
依據前段所述實施方式的封裝結構,其中間隔層可同時設置於晶片與晶片座之間。According to the packaging structure of the embodiment described in the previous paragraph, the spacer layer can be disposed between the chip and the chip base at the same time.
依據前段所述實施方式的封裝結構,其中間隔層的數量可為至少二,且各間隔層設置於各晶片與晶片座之間。According to the packaging structure of the embodiment described in the previous paragraph, the number of spacer layers may be at least two, and each spacer layer is disposed between each chip and the chip holder.
依據前段所述實施方式的封裝結構,其中間隔層的一者的厚度與間隔層的另一者的厚度可不同。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of one of the spacer layers and the thickness of the other spacer layer may be different.
依據前段所述實施方式的封裝結構,其中間隔層的厚度可大於等於40微米,且小於等於500微米。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of the spacer layer may be greater than or equal to 40 microns and less than or equal to 500 microns.
依據前段所述實施方式的封裝結構,其中間隔層的材質可為矽。According to the packaging structure of the embodiment described in the previous paragraph, the material of the spacer layer may be silicon.
依據前段所述實施方式的封裝結構,其中晶片的一者的面積與晶片的另一者的面積可不同。According to the packaging structure of the embodiment described in the previous paragraph, the area of one of the wafers may be different from the area of the other wafer.
依據前段所述實施方式的封裝結構,其中間隔層的面積可小於晶片的總和面積。According to the packaging structure of the embodiment described in the previous paragraph, the area of the spacer layer may be smaller than the total area of the chip.
依據本揭示內容一實施方式提供一種封裝結構,其包含一導線架、一晶片、一間隔層及一塑膠封裝材料。導線架包含一晶片座。晶片設置於導線架的晶片座上。間隔層設置於晶片與晶片座之間。塑膠封裝材料設置於導線架上,並覆蓋晶片。間隔層的面積較晶片的面積小。According to an embodiment of the present disclosure, a packaging structure is provided, which includes a lead frame, a chip, a spacer layer and a plastic packaging material. The leadframe includes a chip holder. The chip is placed on the chip seat of the lead frame. The spacer layer is disposed between the wafer and the wafer holder. The plastic packaging material is placed on the lead frame and covers the chip. The area of the spacer layer is smaller than the area of the wafer.
依據前段所述實施方式的封裝結構,其中間隔層的厚度可大於等於40微米,且小於等於500微米。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of the spacer layer may be greater than or equal to 40 microns and less than or equal to 500 microns.
依據前段所述實施方式的封裝結構,其中間隔層的複數邊緣中的一者與晶片座的複數邊緣中的一者之間具有一第一最小邊距,且第一最小邊距可為至少40微米。According to the packaging structure of the embodiment described in the previous paragraph, there is a first minimum margin between one of the edges of the spacer layer and one of the edges of the chip holder, and the first minimum margin can be at least 40 Micron.
依據前段所述實施方式的封裝結構,其中間隔層的材質可為矽。According to the packaging structure of the embodiment described in the previous paragraph, the material of the spacer layer may be silicon.
請參照第1圖與第2圖,其中第1圖繪示依照本發明第一實施方式中封裝結構100的平面示意圖,第2圖繪示第1圖第一實施方式中封裝結構100的剖視圖。由第1圖與第2圖可知,封裝結構100包含一導線架(圖未標示)、二晶片121、122、一間隔層130及一塑膠封裝材料140,其中塑膠封裝材料140設置於導線架上,並覆蓋晶片121、122。Please refer to FIGS. 1 and 2 , wherein FIG. 1 is a schematic plan view of the
進一步來說,導線架包含一晶片座111及複數引腳112,且晶片121、122分別包含複數接墊151,其中晶片121、122設置於晶片座111,複數導線152連接引腳112與接墊151,且間隔層130同時設置於晶片121、122與晶片座111之間。Furthermore, the lead frame includes a
間隔層130的複數邊緣中的一者與晶片座111的複數邊緣中的一者之間具有一第一最小邊距L1,晶片121、122的複數邊緣中的一者與晶片座111的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2,且第一最小邊距L1可為至少40微米。第一實施方式中,第二最小邊距L2位於晶片121的邊緣中的一者與晶片座111的邊緣中的一者之間。藉此,當晶片121、122並列於晶片座111時,塑膠封裝材料140與晶片座111仍具有足夠的接觸面積以降低當封裝結構100受應力時塑膠封裝材料140分層(delamination)的風險,其中因間隔層130而增加的接觸範圍如第2圖中粗鏈線處。進一步來說,間隔層130的面積可小於晶片121、122的總和面積,且晶片121的面積與晶片122的面積可不同。There is a first minimum edge distance L1 between one of the edges of the
進一步來說,透過間隔層130可增加晶片121、122設置的彈性,即晶片121、122的設置可不受限於晶片座111的面積大小,藉以增加封裝結構100的設計彈性,尤其是當將面積較大的晶片設置於體積較小的封裝結構的情況。再者,間隔層130具有保護晶片121、122的效果,藉以避免外應力撞擊封裝結構100時導致晶片121、122受損的情況發生。Furthermore, the
詳細來說,間隔層130的厚度T可大於等於40微米,且可小於等於500微米。當間隔層130的厚度T小於上述數值範圍時,間隔層130無法達到增加塑膠封裝材料140與晶片座111之間足夠接觸面積的效果;當間隔層130的厚度T大於上述數值範圍時,封裝結構100具有超出規範厚度的問題,或者導線152距離塑膠封裝材料140過近的風險。In detail, the thickness T of the
間隔層130的材質可為矽。具體而言,間隔層130可為矽材質的空白晶圓,但並不以此為限。The material of the
再者,第一實施方式的封裝結構100為QFN的封裝型態,但本揭示內容的封裝結構不僅可應用於QFN,亦可應用於TSOP、SO、QFP的封裝型態,但並不以此為限。Furthermore, the
請參照第3圖與第4圖,其中第3圖繪示依照本發明第二實施方式中封裝結構200的平面示意圖,第4圖繪示第3圖第二實施方式中封裝結構200的剖視圖。由第3圖與第4圖可知,封裝結構200包含一導線架(圖未標示)、二晶片221、222、二間隔層231、232及一塑膠封裝材料240,其中塑膠封裝材料240設置於導線架上,並覆蓋晶片221、222。Please refer to Figures 3 and 4. Figure 3 is a schematic plan view of the
進一步來說,導線架包含一晶片座211及複數引腳212,且晶片221、222分別包含複數接墊251,其中晶片221、222設置於晶片座211,複數導線252連接引腳212與接墊251,間隔層231設置於晶片221與晶片座211之間,且間隔層232設置於晶片222與晶片座211之間。Furthermore, the lead frame includes a
間隔層231、232的複數邊緣中的一者與晶片座211的複數邊緣中的一者之間具有一第一最小邊距L1,晶片221、222的複數邊緣中的一者與晶片座211的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第二實施方式中,第一最小邊距L1位於間隔層231的邊緣中的一者與晶片座211的邊緣中的一者之間,第二最小邊距L2位於晶片221的邊緣中的一者與晶片座211的邊緣中的一者之間。藉此,當晶片221、222並列於晶片座211時,塑膠封裝材料240與晶片座211仍具有足夠的接觸面積以降低當封裝結構200受應力時塑膠封裝材料240分層的風險,其中因間隔層231、232而增加的接觸範圍如第4圖中粗鏈線處。There is a first minimum margin L1 between one of the edges of the
另外,第二實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structure and arrangement relationship of the remaining components of the second embodiment are the same as those of the first embodiment, and will not be described again here.
請參照第5圖與第6圖,其中第5圖繪示依照本發明第三實施方式中封裝結構300的平面示意圖,第6圖繪示第5圖第三實施方式中封裝結構300的剖視圖。由第5圖與第6圖可知,封裝結構300包含一導線架(圖未標示)、二晶片321、322、二間隔層331、332及一塑膠封裝材料340,其中塑膠封裝材料340設置於導線架上,並覆蓋晶片321、322。Please refer to FIGS. 5 and 6 , wherein FIG. 5 shows a schematic plan view of the
進一步來說,導線架包含一晶片座311及複數引腳312,且晶片321、322分別包含複數接墊351,其中晶片321、322設置於晶片座311,複數導線352連接引腳312與接墊351,間隔層331設置於晶片321與晶片座311之間,且間隔層332設置於晶片322與晶片座311之間。Furthermore, the lead frame includes a
間隔層331、332的複數邊緣中的一者與晶片座311的複數邊緣中的一者之間具有一第一最小邊距L1,晶片321、322的複數邊緣中的一者與晶片座311的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第三實施方式中,第一最小邊距L1位於間隔層331的邊緣中的一者與晶片座311的邊緣中的一者之間,第二最小邊距L2位於晶片321的邊緣中的一者與晶片座311的邊緣中的一者之間。藉此,當晶片321、322並列於晶片座311時,塑膠封裝材料340與晶片座311仍具有足夠的接觸面積以降低當封裝結構300受應力時塑膠封裝材料340分層的風險,其中因間隔層331、332而增加的接觸範圍如第6圖中粗鏈線處。There is a first minimum margin L1 between one of the edges of the
再者,間隔層331的厚度T1與間隔層332的厚度T2不同,其中厚度T1小於厚度T2。當晶片321、332的總和面積與晶片座311的面積相近時,透過不同厚度的間隔層331、332可進一步增加晶片321、322之間的垂直距離,以避免晶片321、322之間距離過近導致導線352的距離不足的問題。詳細來說,透過增加晶片321、322之間的垂直距離可縮短晶片321、322之間的水平距離,以維持導線352的連接強度。Furthermore, the thickness T1 of the
另外,第三實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structures and arrangements of the remaining components of the third embodiment are the same as those of the first embodiment, and will not be described again here.
請參照第7圖與第8圖,其中第7圖繪示依照本發明第四實施方式中封裝結構400的平面示意圖,第8圖繪示第7圖第四實施方式中封裝結構400的剖視圖。由第7圖與第8圖可知,封裝結構400包含一導線架(圖未標示)、二晶片421、422、一間隔層430及一塑膠封裝材料440,其中塑膠封裝材料440設置於導線架上,並覆蓋晶片421、422。Please refer to FIGS. 7 and 8 . FIG. 7 is a schematic plan view of the
進一步來說,導線架包含一晶片座411及複數引腳412,且晶片421、422分別包含複數接墊451,其中晶片421、422設置於晶片座411,複數導線452連接引腳412與接墊451,且間隔層430設置於晶片422與晶片座411之間。Furthermore, the lead frame includes a
間隔層430的複數邊緣中的一者與晶片座411的複數邊緣中的一者之間具有一第一最小邊距L1,晶片421、422的複數邊緣中的一者與晶片座411的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第四實施方式中,第二最小邊距L2位於晶片422的邊緣中的一者與晶片座411的邊緣中的一者之間。透過設置間隔層430於晶片422與晶片座411之間且未設置間隔層430於晶片421與晶片座411之間以增加晶片421、422之間的垂直距離,藉以維持導線452的連接強度。藉此,當晶片421、422並列於晶片座411時,塑膠封裝材料440與晶片座411仍具有足夠的接觸面積以降低當封裝結構400受應力時塑膠封裝材料440分層的風險,其中因間隔層430而增加的接觸範圍如第8圖中粗鏈線處。There is a first minimum edge distance L1 between one of the edges of the
另外,第四實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structures and arrangements of the remaining components of the fourth embodiment are the same as those of the first embodiment, and will not be described again here.
請參照第9圖與第10圖,其中第9圖繪示依照本發明第五實施方式中封裝結構500的平面示意圖,第10圖繪示第9圖第五實施方式中封裝結構500的剖視圖。由第9圖與第10圖可知,封裝結構500包含一導線架(圖未標示)、一晶片520、一間隔層530及一塑膠封裝材料540,其中塑膠封裝材料540設置於導線架上,並覆蓋晶片520。Please refer to Figures 9 and 10. Figure 9 illustrates a schematic plan view of the
進一步來說,導線架包含一晶片座511及複數引腳512,且晶片520包含複數接墊551,其中晶片520設置於晶片座511,複數導線552連接引腳512與接墊551,且間隔層530設置於晶片520與晶片座511之間。Further, the lead frame includes a
間隔層530的面積較晶片520的面積小。進一步來說,間隔層530的複數邊緣中的一者與晶片座511的複數邊緣中的一者之間具有一第一最小邊距L1',晶片520的複數邊緣中的一者與晶片座511的邊緣中的一者之間具有一第二最小邊距L2',第一最小邊距L1'大於第二最小邊距L2',且第一最小邊距L1'可為至少40微米。The area of the
請參照第11圖,其為第9圖第五實施方式中封裝結構500的超音波掃描分析(SAT)影像。具體而言,當晶片520的面積與晶片座511的面積相近時,透過間隔層530可增加塑膠封裝材料540與晶片座511的接觸面積,即塑膠封裝材料540與晶片座511具有足夠的接觸面積時可降低於受應力時塑膠封裝材料540分層的風險,如第11圖所示,經超音波掃描分析後幾乎無分層的狀況,其中分層部分D零星分布於晶片座511的一側。再者,因間隔層530而增加的接觸範圍如第10圖中粗鏈線處。Please refer to Figure 11, which is an ultrasonic scanning analysis (SAT) image of the
進一步來說,透過間隔層530可增加晶片520設置的彈性,即晶片520的設置可不受限於晶片座511的面積大小,藉以增加封裝結構500的設計彈性,尤其是當將面積較大的晶片設置於體積較小的封裝結構的情況。再者,間隔層530具有保護晶片520的效果,藉以避免外應力撞擊封裝結構500時導致晶片520受損的情況發生。Furthermore, the
詳細來說,間隔層530的厚度T可大於等於40微米,且可小於等於500微米。當間隔層530的厚度T小於上述數值範圍時,間隔層530無法達到增加塑膠封裝材料540與晶片座511之間足夠接觸面積的效果;當間隔層530的厚度T大於上述數值範圍時,封裝結構500具有超出規範厚度的問題,或者導線552距離塑膠封裝材料540過近的風險。In detail, the thickness T of the
間隔層530的材質可為矽。具體而言,間隔層530可為矽材質的空白晶圓,但並不以此為限。The material of the
必須說明的是,第1圖、第3圖、第5圖、第7圖、第9圖及第11圖為方便表達其他元件(如導線架、晶片及間隔層等)的設置關係,故省略塑膠封裝材料的標示。It must be noted that Figures 1, 3, 5, 7, 9 and 11 are omitted for the convenience of expressing the arrangement relationship of other components (such as lead frames, chips and spacers, etc.) Labeling of plastic packaging materials.
綜上所述,無論是單晶片封裝或多晶片封裝的封裝型態,皆可透過間隔層使塑膠封裝材料與晶片座具有足夠的接觸面積,藉以降低當封裝結構受應力時塑膠封裝材料分層的風險,並將間隔層應用於單晶片封裝與多晶片封裝的封裝型態皆可增加晶片設置的彈性,即晶片的設置可不受限於晶片座的面積大小,藉以增加封裝結構的設計彈性。再者,間隔層具有保護晶片的效果,藉以避免外應力撞擊封裝結構時導致晶片受損的情況發生。In summary, regardless of the packaging type of single-chip packaging or multi-chip packaging, the spacer layer can be used to ensure that the plastic packaging material and the chip holder have sufficient contact area, thereby reducing the delamination of the plastic packaging material when the packaging structure is stressed. Risks, and applying spacers to single-chip packaging and multi-chip packaging can increase the flexibility of chip placement. That is, the chip placement is not limited to the area size of the chip holder, thereby increasing the design flexibility of the packaging structure. Furthermore, the spacer layer has the effect of protecting the chip, thereby preventing the chip from being damaged when external stress hits the packaging structure.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.
100,200,300,400,500:封裝結構 111,211,311,411,511:晶片座 112,212,312,412,512:引腳 121,122,221,222,321,322,421,422,520:晶片 130,231,232,331,332,430,530:間隔層 140,240,340,440,540:塑膠封裝材料 151,251,351,451,551:接墊 152,252,352,452,552:導線 D:分層部分 L1,L1':第一最小邊距 L2,L2':第二最小邊距 T,T1,T2:厚度 100,200,300,400,500:Package structure 111,211,311,411,511: Chip holder 112,212,312,412,512: pin 121,122,221,222,321,322,421,422,520: Chip 130,231,232,331,332,430,530: Spacer layer 140,240,340,440,540: Plastic packaging materials 151,251,351,451,551: Pad 152,252,352,452,552: Wire D: layered part L1,L1': first minimum margin L2,L2': second minimum margin T, T1, T2: Thickness
第1圖繪示依照本發明第一實施方式中封裝結構的平面示意圖; 第2圖繪示第1圖第一實施方式中封裝結構的剖視圖; 第3圖繪示依照本發明第二實施方式中封裝結構的平面示意圖; 第4圖繪示第3圖第二實施方式中封裝結構的剖視圖; 第5圖繪示依照本發明第三實施方式中封裝結構的平面示意圖; 第6圖繪示第5圖第三實施方式中封裝結構的剖視圖; 第7圖繪示依照本發明第四實施方式中封裝結構的平面示意圖; 第8圖繪示第7圖第四實施方式中封裝結構的剖視圖; 第9圖繪示依照本發明第五實施方式中封裝結構的平面示意圖; 第10圖繪示第9圖第五實施方式中封裝結構的剖視圖;以及 第11圖繪示第9圖第五實施方式中封裝結構的超音波掃描分析影像。 Figure 1 is a schematic plan view of a packaging structure according to the first embodiment of the present invention; Figure 2 shows a cross-sectional view of the packaging structure in the first embodiment of Figure 1; Figure 3 is a schematic plan view of a packaging structure according to a second embodiment of the present invention; Figure 4 shows a cross-sectional view of the packaging structure in the second embodiment of Figure 3; Figure 5 is a schematic plan view of a packaging structure according to a third embodiment of the present invention; Figure 6 shows a cross-sectional view of the packaging structure in the third embodiment of Figure 5; Figure 7 is a schematic plan view of a packaging structure according to a fourth embodiment of the present invention; Figure 8 shows a cross-sectional view of the packaging structure in the fourth embodiment of Figure 7; Figure 9 is a schematic plan view of a packaging structure according to a fifth embodiment of the present invention; Figure 10 shows a cross-sectional view of the packaging structure in the fifth embodiment of Figure 9; and FIG. 11 shows an ultrasonic scanning analysis image of the packaging structure in the fifth embodiment of FIG. 9 .
100:封裝結構 100:Package structure
111:晶片座 111:Chip holder
112:引腳 112: pin
121,122:晶片 121,122: Chip
130:間隔層 130: Spacer layer
140:塑膠封裝材料 140:Plastic packaging materials
152:導線 152:Wire
L1:第一最小邊距 L1: first minimum margin
L2:第二最小邊距 L2: second minimum margin
T:厚度 T:Thickness
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