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TW202408034A - Package structure - Google Patents

Package structure Download PDF

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Publication number
TW202408034A
TW202408034A TW111129040A TW111129040A TW202408034A TW 202408034 A TW202408034 A TW 202408034A TW 111129040 A TW111129040 A TW 111129040A TW 111129040 A TW111129040 A TW 111129040A TW 202408034 A TW202408034 A TW 202408034A
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TW
Taiwan
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spacer layer
chip
packaging structure
edges
wafer
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TW111129040A
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Chinese (zh)
Inventor
余正富
史凱日
吳祈毅
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美商矽成積體電路股份有限公司
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Application filed by 美商矽成積體電路股份有限公司 filed Critical 美商矽成積體電路股份有限公司
Priority to TW111129040A priority Critical patent/TW202408034A/en
Priority to US18/052,234 priority patent/US20240047313A1/en
Publication of TW202408034A publication Critical patent/TW202408034A/en

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Abstract

A package structure includes a leadframe, at least two dies, at least one spacer and a plastic package material. The leadframe includes a die pad. The dies are disposed on the die pad of the leadframe. The spacer is disposed between at least one of the dies and the die pad. The plastic package material is disposed on the leadframe, and covers the dies. A first minimum edge distance is located between one of a plurality of edges of the spacer and one of a plurality of edges of the die pad, a second minimum edge distance is located between one of a plurality of edges of the dies and one of the edges of the die pad, and the first minimum edge distance is larger than the second minimum edge distance. Therefore, a risk of the delamination of the plastic package material during the package structure stressed can be reduced, wherein the flexibility of design of the package structure can be increased via the spacer, and the spacer can be configured to protect the dies to prevent the damage.

Description

封裝結構Package structure

本揭示內容係關於一種封裝結構,且特別是一種可增加塑膠封裝材料與晶片座之間具有足夠接觸面積的封裝結構。The present disclosure relates to a packaging structure, and in particular, a packaging structure that can increase a sufficient contact area between a plastic packaging material and a chip holder.

現今半導體封裝產業中,封裝結構的體積因應科技的發展逐漸減小,其中可透過縮小導線架的晶片座的面積、縮小晶片的面積以減小封裝結構的體積。然而,當縮小晶片座的面積的情況下導致晶片邊緣距離晶片座邊緣過近,即晶片座邊緣與晶片邊緣的距離不足,進而導致塑膠封裝材料與晶片座的接觸面積不足。據此,當封裝結構受到應力時,塑膠封裝材料易於晶片座邊緣產生嚴重分層的缺陷。In today's semiconductor packaging industry, the size of the packaging structure is gradually reduced in response to the development of technology. The size of the packaging structure can be reduced by reducing the area of the chip seat of the lead frame and reducing the area of the chip. However, when the area of the chip holder is reduced, the edge of the chip is too close to the edge of the wafer holder, that is, the distance between the edge of the wafer holder and the edge of the chip is insufficient, resulting in insufficient contact area between the plastic packaging material and the wafer holder. Accordingly, when the packaging structure is stressed, the plastic packaging material is prone to serious delamination defects at the edge of the chip holder.

因此,發展一種可降低於受應力時塑膠封裝材料分層風險的封裝結構遂成為產業上重要且急欲解決的問題。Therefore, developing a packaging structure that can reduce the risk of delamination of plastic packaging materials under stress has become an important and urgent problem in the industry.

本揭示內容提供一種封裝結構,透過間隔層可使塑膠封裝材料與晶片座具有足夠的接觸面積,藉以降低於受應力時塑膠封裝材料分層的風險。The present disclosure provides a packaging structure in which the plastic packaging material and the chip holder can have sufficient contact area through the spacer layer, thereby reducing the risk of delamination of the plastic packaging material when subjected to stress.

依據本揭示內容一實施方式提供一種封裝結構,其包含一導線架、至少二晶片、至少一間隔層及一塑膠封裝材料。導線架包含一晶片座。晶片設置於導線架的晶片座上。間隔層設置於晶片的至少一者與晶片座之間。塑膠封裝材料設置於導線架上,並覆蓋晶片。間隔層的複數邊緣中的一者與晶片座的複數邊緣中的一者之間具有一第一最小邊距,晶片的複數邊緣中的一者與晶片座的邊緣中的一者之間具有一第二最小邊距,且第一最小邊距大於第二最小邊距。According to an embodiment of the present disclosure, a packaging structure is provided, which includes a lead frame, at least two chips, at least one spacer layer and a plastic packaging material. The leadframe includes a chip holder. The chip is placed on the chip seat of the lead frame. A spacer layer is provided between at least one of the wafers and the wafer holder. The plastic packaging material is placed on the lead frame and covers the chip. There is a first minimum margin between one of the edges of the spacer layer and one of the edges of the wafer holder, and there is a first minimum edge distance between one of the edges of the wafer and one of the edges of the wafer holder. The second minimum margin, and the first minimum margin is greater than the second minimum margin.

依據前段所述實施方式的封裝結構,其中第一最小邊距可為至少40微米。According to the packaging structure of the embodiment described in the previous paragraph, the first minimum margin may be at least 40 microns.

依據前段所述實施方式的封裝結構,其中間隔層可同時設置於晶片與晶片座之間。According to the packaging structure of the embodiment described in the previous paragraph, the spacer layer can be disposed between the chip and the chip base at the same time.

依據前段所述實施方式的封裝結構,其中間隔層的數量可為至少二,且各間隔層設置於各晶片與晶片座之間。According to the packaging structure of the embodiment described in the previous paragraph, the number of spacer layers may be at least two, and each spacer layer is disposed between each chip and the chip holder.

依據前段所述實施方式的封裝結構,其中間隔層的一者的厚度與間隔層的另一者的厚度可不同。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of one of the spacer layers and the thickness of the other spacer layer may be different.

依據前段所述實施方式的封裝結構,其中間隔層的厚度可大於等於40微米,且小於等於500微米。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of the spacer layer may be greater than or equal to 40 microns and less than or equal to 500 microns.

依據前段所述實施方式的封裝結構,其中間隔層的材質可為矽。According to the packaging structure of the embodiment described in the previous paragraph, the material of the spacer layer may be silicon.

依據前段所述實施方式的封裝結構,其中晶片的一者的面積與晶片的另一者的面積可不同。According to the packaging structure of the embodiment described in the previous paragraph, the area of one of the wafers may be different from the area of the other wafer.

依據前段所述實施方式的封裝結構,其中間隔層的面積可小於晶片的總和面積。According to the packaging structure of the embodiment described in the previous paragraph, the area of the spacer layer may be smaller than the total area of the chip.

依據本揭示內容一實施方式提供一種封裝結構,其包含一導線架、一晶片、一間隔層及一塑膠封裝材料。導線架包含一晶片座。晶片設置於導線架的晶片座上。間隔層設置於晶片與晶片座之間。塑膠封裝材料設置於導線架上,並覆蓋晶片。間隔層的面積較晶片的面積小。According to an embodiment of the present disclosure, a packaging structure is provided, which includes a lead frame, a chip, a spacer layer and a plastic packaging material. The leadframe includes a chip holder. The chip is placed on the chip seat of the lead frame. The spacer layer is disposed between the wafer and the wafer holder. The plastic packaging material is placed on the lead frame and covers the chip. The area of the spacer layer is smaller than the area of the wafer.

依據前段所述實施方式的封裝結構,其中間隔層的厚度可大於等於40微米,且小於等於500微米。According to the packaging structure of the embodiment described in the previous paragraph, the thickness of the spacer layer may be greater than or equal to 40 microns and less than or equal to 500 microns.

依據前段所述實施方式的封裝結構,其中間隔層的複數邊緣中的一者與晶片座的複數邊緣中的一者之間具有一第一最小邊距,且第一最小邊距可為至少40微米。According to the packaging structure of the embodiment described in the previous paragraph, there is a first minimum margin between one of the edges of the spacer layer and one of the edges of the chip holder, and the first minimum margin can be at least 40 Micron.

依據前段所述實施方式的封裝結構,其中間隔層的材質可為矽。According to the packaging structure of the embodiment described in the previous paragraph, the material of the spacer layer may be silicon.

請參照第1圖與第2圖,其中第1圖繪示依照本發明第一實施方式中封裝結構100的平面示意圖,第2圖繪示第1圖第一實施方式中封裝結構100的剖視圖。由第1圖與第2圖可知,封裝結構100包含一導線架(圖未標示)、二晶片121、122、一間隔層130及一塑膠封裝材料140,其中塑膠封裝材料140設置於導線架上,並覆蓋晶片121、122。Please refer to FIGS. 1 and 2 , wherein FIG. 1 is a schematic plan view of the packaging structure 100 according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the packaging structure 100 of the first embodiment in FIG. 1 . As can be seen from Figures 1 and 2, the packaging structure 100 includes a lead frame (not shown), two chips 121, 122, a spacer layer 130 and a plastic packaging material 140, wherein the plastic packaging material 140 is disposed on the lead frame , and cover the wafers 121 and 122.

進一步來說,導線架包含一晶片座111及複數引腳112,且晶片121、122分別包含複數接墊151,其中晶片121、122設置於晶片座111,複數導線152連接引腳112與接墊151,且間隔層130同時設置於晶片121、122與晶片座111之間。Furthermore, the lead frame includes a chip seat 111 and a plurality of pins 112, and the chips 121 and 122 respectively include a plurality of pads 151, wherein the chips 121 and 122 are arranged on the chip seat 111, and a plurality of wires 152 connect the pins 112 and the pads. 151, and the spacer layer 130 is simultaneously disposed between the wafers 121, 122 and the wafer holder 111.

間隔層130的複數邊緣中的一者與晶片座111的複數邊緣中的一者之間具有一第一最小邊距L1,晶片121、122的複數邊緣中的一者與晶片座111的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2,且第一最小邊距L1可為至少40微米。第一實施方式中,第二最小邊距L2位於晶片121的邊緣中的一者與晶片座111的邊緣中的一者之間。藉此,當晶片121、122並列於晶片座111時,塑膠封裝材料140與晶片座111仍具有足夠的接觸面積以降低當封裝結構100受應力時塑膠封裝材料140分層(delamination)的風險,其中因間隔層130而增加的接觸範圍如第2圖中粗鏈線處。進一步來說,間隔層130的面積可小於晶片121、122的總和面積,且晶片121的面積與晶片122的面積可不同。There is a first minimum edge distance L1 between one of the edges of the spacer layer 130 and one of the edges of the wafer holder 111. One of the edges of the wafers 121, 122 is between one of the edges of the wafer holder 111 There is a second minimum margin L2 between one of them, wherein the first minimum margin L1 is greater than the second minimum margin L2, and the first minimum margin L1 may be at least 40 microns. In the first embodiment, the second minimum margin L2 is located between one of the edges of the wafer 121 and one of the edges of the wafer holder 111 . Thereby, when the chips 121 and 122 are juxtaposed on the chip pedestal 111, the plastic packaging material 140 and the wafer pedestal 111 still have sufficient contact area to reduce the risk of delamination of the plastic packaging material 140 when the packaging structure 100 is stressed. The contact range increased by the spacer layer 130 is shown as the thick chain line in Figure 2. Furthermore, the area of the spacer layer 130 may be smaller than the total area of the wafers 121 and 122 , and the area of the wafer 121 and the area of the wafer 122 may be different.

進一步來說,透過間隔層130可增加晶片121、122設置的彈性,即晶片121、122的設置可不受限於晶片座111的面積大小,藉以增加封裝結構100的設計彈性,尤其是當將面積較大的晶片設置於體積較小的封裝結構的情況。再者,間隔層130具有保護晶片121、122的效果,藉以避免外應力撞擊封裝結構100時導致晶片121、122受損的情況發生。Furthermore, the spacer layer 130 can increase the flexibility of the placement of the chips 121 and 122 , that is, the placement of the chips 121 and 122 is not limited to the area size of the chip base 111 , thereby increasing the design flexibility of the packaging structure 100 , especially when the area is reduced. A situation where a larger chip is placed in a smaller package structure. Furthermore, the spacer layer 130 has the effect of protecting the chips 121 and 122, thereby preventing the chips 121 and 122 from being damaged when external stress impacts the packaging structure 100.

詳細來說,間隔層130的厚度T可大於等於40微米,且可小於等於500微米。當間隔層130的厚度T小於上述數值範圍時,間隔層130無法達到增加塑膠封裝材料140與晶片座111之間足夠接觸面積的效果;當間隔層130的厚度T大於上述數值範圍時,封裝結構100具有超出規範厚度的問題,或者導線152距離塑膠封裝材料140過近的風險。In detail, the thickness T of the spacer layer 130 may be greater than or equal to 40 microns, and may be less than or equal to 500 microns. When the thickness T of the spacer layer 130 is less than the above numerical range, the spacer layer 130 cannot achieve the effect of increasing the sufficient contact area between the plastic packaging material 140 and the chip holder 111; when the thickness T of the spacer layer 130 is greater than the above numerical range, the packaging structure 100 has the risk of exceeding specification thickness, or having the wires 152 too close to the plastic encapsulation material 140 .

間隔層130的材質可為矽。具體而言,間隔層130可為矽材質的空白晶圓,但並不以此為限。The material of the spacer layer 130 may be silicon. Specifically, the spacer layer 130 can be a blank wafer made of silicon, but is not limited thereto.

再者,第一實施方式的封裝結構100為QFN的封裝型態,但本揭示內容的封裝結構不僅可應用於QFN,亦可應用於TSOP、SO、QFP的封裝型態,但並不以此為限。Furthermore, the packaging structure 100 of the first embodiment is a QFN packaging type, but the packaging structure of this disclosure can be applied not only to QFN, but also to TSOP, SO, and QFP packaging types, but this is not the case. is limited.

請參照第3圖與第4圖,其中第3圖繪示依照本發明第二實施方式中封裝結構200的平面示意圖,第4圖繪示第3圖第二實施方式中封裝結構200的剖視圖。由第3圖與第4圖可知,封裝結構200包含一導線架(圖未標示)、二晶片221、222、二間隔層231、232及一塑膠封裝材料240,其中塑膠封裝材料240設置於導線架上,並覆蓋晶片221、222。Please refer to Figures 3 and 4. Figure 3 is a schematic plan view of the packaging structure 200 according to the second embodiment of the present invention, and Figure 4 is a cross-sectional view of the packaging structure 200 of the second embodiment of Figure 3. As can be seen from Figures 3 and 4, the packaging structure 200 includes a lead frame (not shown), two chips 221, 222, two spacer layers 231, 232 and a plastic packaging material 240, wherein the plastic packaging material 240 is disposed on the wire on the rack and cover the wafers 221 and 222.

進一步來說,導線架包含一晶片座211及複數引腳212,且晶片221、222分別包含複數接墊251,其中晶片221、222設置於晶片座211,複數導線252連接引腳212與接墊251,間隔層231設置於晶片221與晶片座211之間,且間隔層232設置於晶片222與晶片座211之間。Furthermore, the lead frame includes a chip seat 211 and a plurality of pins 212, and the chips 221 and 222 respectively include a plurality of pads 251, wherein the chips 221 and 222 are arranged on the chip seat 211, and a plurality of wires 252 connect the pins 212 and the pads. 251, the spacer layer 231 is provided between the wafer 221 and the wafer seat 211, and the spacer layer 232 is provided between the wafer 222 and the wafer seat 211.

間隔層231、232的複數邊緣中的一者與晶片座211的複數邊緣中的一者之間具有一第一最小邊距L1,晶片221、222的複數邊緣中的一者與晶片座211的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第二實施方式中,第一最小邊距L1位於間隔層231的邊緣中的一者與晶片座211的邊緣中的一者之間,第二最小邊距L2位於晶片221的邊緣中的一者與晶片座211的邊緣中的一者之間。藉此,當晶片221、222並列於晶片座211時,塑膠封裝材料240與晶片座211仍具有足夠的接觸面積以降低當封裝結構200受應力時塑膠封裝材料240分層的風險,其中因間隔層231、232而增加的接觸範圍如第4圖中粗鏈線處。There is a first minimum margin L1 between one of the edges of the spacer layers 231 and 232 and one of the edges of the wafer holder 211 . There is a second minimum margin L2 between one of the edges, wherein the first minimum margin L1 is greater than the second minimum margin L2. In the second embodiment, the first minimum margin L1 is located between one of the edges of the spacer layer 231 and one of the edges of the wafer holder 211 , and the second minimum margin L2 is located between one of the edges of the wafer 221 and one of the edges of the wafer holder 211 . Thereby, when the chips 221 and 222 are juxtaposed on the chip seat 211, the plastic packaging material 240 and the chip seat 211 still have sufficient contact area to reduce the risk of delamination of the plastic packaging material 240 when the packaging structure 200 is stressed. The increased contact range due to layers 231 and 232 is as shown in the thick chain line in Figure 4.

另外,第二實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structure and arrangement relationship of the remaining components of the second embodiment are the same as those of the first embodiment, and will not be described again here.

請參照第5圖與第6圖,其中第5圖繪示依照本發明第三實施方式中封裝結構300的平面示意圖,第6圖繪示第5圖第三實施方式中封裝結構300的剖視圖。由第5圖與第6圖可知,封裝結構300包含一導線架(圖未標示)、二晶片321、322、二間隔層331、332及一塑膠封裝材料340,其中塑膠封裝材料340設置於導線架上,並覆蓋晶片321、322。Please refer to FIGS. 5 and 6 , wherein FIG. 5 shows a schematic plan view of the packaging structure 300 according to the third embodiment of the present invention, and FIG. 6 shows a cross-sectional view of the packaging structure 300 of the third embodiment in FIG. 5 . As can be seen from Figures 5 and 6, the packaging structure 300 includes a lead frame (not shown), two chips 321, 322, two spacer layers 331, 332 and a plastic packaging material 340, where the plastic packaging material 340 is disposed on the wire on the rack and cover the wafers 321 and 322.

進一步來說,導線架包含一晶片座311及複數引腳312,且晶片321、322分別包含複數接墊351,其中晶片321、322設置於晶片座311,複數導線352連接引腳312與接墊351,間隔層331設置於晶片321與晶片座311之間,且間隔層332設置於晶片322與晶片座311之間。Furthermore, the lead frame includes a chip seat 311 and a plurality of pins 312, and the chips 321 and 322 respectively include a plurality of pads 351, wherein the chips 321 and 322 are arranged on the chip seat 311, and a plurality of wires 352 connect the pins 312 and the pads. 351, the spacer layer 331 is provided between the wafer 321 and the wafer seat 311, and the spacer layer 332 is provided between the wafer 322 and the wafer seat 311.

間隔層331、332的複數邊緣中的一者與晶片座311的複數邊緣中的一者之間具有一第一最小邊距L1,晶片321、322的複數邊緣中的一者與晶片座311的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第三實施方式中,第一最小邊距L1位於間隔層331的邊緣中的一者與晶片座311的邊緣中的一者之間,第二最小邊距L2位於晶片321的邊緣中的一者與晶片座311的邊緣中的一者之間。藉此,當晶片321、322並列於晶片座311時,塑膠封裝材料340與晶片座311仍具有足夠的接觸面積以降低當封裝結構300受應力時塑膠封裝材料340分層的風險,其中因間隔層331、332而增加的接觸範圍如第6圖中粗鏈線處。There is a first minimum margin L1 between one of the edges of the spacer layers 331 and 332 and one of the edges of the wafer holder 311 . There is a second minimum margin L2 between one of the edges, wherein the first minimum margin L1 is greater than the second minimum margin L2. In the third embodiment, the first minimum margin L1 is located between one of the edges of the spacer layer 331 and one of the edges of the wafer holder 311 , and the second minimum margin L2 is located between one of the edges of the wafer 321 and one of the edges of the wafer holder 311 . Thereby, when the chips 321 and 322 are arranged side by side on the chip holder 311, the plastic packaging material 340 and the chip holder 311 still have sufficient contact area to reduce the risk of delamination of the plastic packaging material 340 when the packaging structure 300 is stressed. The contact range increased by layers 331 and 332 is as shown in the thick chain line in Figure 6.

再者,間隔層331的厚度T1與間隔層332的厚度T2不同,其中厚度T1小於厚度T2。當晶片321、332的總和面積與晶片座311的面積相近時,透過不同厚度的間隔層331、332可進一步增加晶片321、322之間的垂直距離,以避免晶片321、322之間距離過近導致導線352的距離不足的問題。詳細來說,透過增加晶片321、322之間的垂直距離可縮短晶片321、322之間的水平距離,以維持導線352的連接強度。Furthermore, the thickness T1 of the spacer layer 331 is different from the thickness T2 of the spacer layer 332, wherein the thickness T1 is smaller than the thickness T2. When the total area of the wafers 321 and 332 is similar to the area of the wafer holder 311, the vertical distance between the wafers 321 and 322 can be further increased through the spacer layers 331 and 332 of different thicknesses to prevent the wafers 321 and 322 from being too close. This leads to the problem of insufficient distance between wires 352. Specifically, by increasing the vertical distance between the chips 321 and 322, the horizontal distance between the chips 321 and 322 can be shortened to maintain the connection strength of the wires 352.

另外,第三實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structures and arrangements of the remaining components of the third embodiment are the same as those of the first embodiment, and will not be described again here.

請參照第7圖與第8圖,其中第7圖繪示依照本發明第四實施方式中封裝結構400的平面示意圖,第8圖繪示第7圖第四實施方式中封裝結構400的剖視圖。由第7圖與第8圖可知,封裝結構400包含一導線架(圖未標示)、二晶片421、422、一間隔層430及一塑膠封裝材料440,其中塑膠封裝材料440設置於導線架上,並覆蓋晶片421、422。Please refer to FIGS. 7 and 8 . FIG. 7 is a schematic plan view of the packaging structure 400 according to the fourth embodiment of the present invention, and FIG. 8 is a cross-sectional view of the packaging structure 400 of the fourth embodiment in FIG. 7 . As can be seen from Figures 7 and 8, the packaging structure 400 includes a lead frame (not shown), two chips 421, 422, a spacer layer 430 and a plastic packaging material 440, wherein the plastic packaging material 440 is disposed on the lead frame , and cover the wafers 421 and 422.

進一步來說,導線架包含一晶片座411及複數引腳412,且晶片421、422分別包含複數接墊451,其中晶片421、422設置於晶片座411,複數導線452連接引腳412與接墊451,且間隔層430設置於晶片422與晶片座411之間。Furthermore, the lead frame includes a chip seat 411 and a plurality of pins 412, and the chips 421 and 422 respectively include a plurality of pads 451, wherein the chips 421 and 422 are arranged on the chip seat 411, and a plurality of wires 452 connect the pins 412 and the pads. 451, and the spacer layer 430 is disposed between the wafer 422 and the wafer holder 411.

間隔層430的複數邊緣中的一者與晶片座411的複數邊緣中的一者之間具有一第一最小邊距L1,晶片421、422的複數邊緣中的一者與晶片座411的邊緣中的一者之間具有一第二最小邊距L2,其中第一最小邊距L1大於第二最小邊距L2。第四實施方式中,第二最小邊距L2位於晶片422的邊緣中的一者與晶片座411的邊緣中的一者之間。透過設置間隔層430於晶片422與晶片座411之間且未設置間隔層430於晶片421與晶片座411之間以增加晶片421、422之間的垂直距離,藉以維持導線452的連接強度。藉此,當晶片421、422並列於晶片座411時,塑膠封裝材料440與晶片座411仍具有足夠的接觸面積以降低當封裝結構400受應力時塑膠封裝材料440分層的風險,其中因間隔層430而增加的接觸範圍如第8圖中粗鏈線處。There is a first minimum edge distance L1 between one of the edges of the spacer layer 430 and one of the edges of the wafer holder 411, and one of the edges of the wafers 421, 422 is between There is a second minimum margin L2 between one of them, wherein the first minimum margin L1 is greater than the second minimum margin L2. In the fourth embodiment, the second minimum margin L2 is located between one of the edges of the wafer 422 and one of the edges of the wafer holder 411 . By disposing the spacer layer 430 between the chip 422 and the chip seat 411 and not disposing the spacer layer 430 between the chip 421 and the chip seat 411, the vertical distance between the chips 421 and 422 is increased, thereby maintaining the connection strength of the wire 452. Thereby, when the chips 421 and 422 are juxtaposed on the chip seat 411, the plastic packaging material 440 and the chip seat 411 still have sufficient contact area to reduce the risk of delamination of the plastic packaging material 440 when the packaging structure 400 is stressed. The increased contact range of layer 430 is as shown in the thick chain line in Figure 8.

另外,第四實施方式與第一實施方式其餘的元件之結構及配置關係皆相同,在此將不另贅述。In addition, the structures and arrangements of the remaining components of the fourth embodiment are the same as those of the first embodiment, and will not be described again here.

請參照第9圖與第10圖,其中第9圖繪示依照本發明第五實施方式中封裝結構500的平面示意圖,第10圖繪示第9圖第五實施方式中封裝結構500的剖視圖。由第9圖與第10圖可知,封裝結構500包含一導線架(圖未標示)、一晶片520、一間隔層530及一塑膠封裝材料540,其中塑膠封裝材料540設置於導線架上,並覆蓋晶片520。Please refer to Figures 9 and 10. Figure 9 illustrates a schematic plan view of the packaging structure 500 according to the fifth embodiment of the present invention, and Figure 10 illustrates a cross-sectional view of the packaging structure 500 of the fifth embodiment of Figure 9. As can be seen from Figures 9 and 10, the packaging structure 500 includes a lead frame (not shown), a chip 520, a spacer layer 530 and a plastic packaging material 540, where the plastic packaging material 540 is disposed on the lead frame, and Cover wafer 520.

進一步來說,導線架包含一晶片座511及複數引腳512,且晶片520包含複數接墊551,其中晶片520設置於晶片座511,複數導線552連接引腳512與接墊551,且間隔層530設置於晶片520與晶片座511之間。Further, the lead frame includes a chip seat 511 and a plurality of pins 512, and the chip 520 includes a plurality of pads 551, wherein the chip 520 is disposed on the chip seat 511, a plurality of wires 552 connect the pins 512 and the pads 551, and the spacing layer 530 is disposed between the chip 520 and the chip holder 511 .

間隔層530的面積較晶片520的面積小。進一步來說,間隔層530的複數邊緣中的一者與晶片座511的複數邊緣中的一者之間具有一第一最小邊距L1',晶片520的複數邊緣中的一者與晶片座511的邊緣中的一者之間具有一第二最小邊距L2',第一最小邊距L1'大於第二最小邊距L2',且第一最小邊距L1'可為至少40微米。The area of the spacer layer 530 is smaller than the area of the wafer 520 . Furthermore, there is a first minimum edge distance L1' between one of the edges of the spacer layer 530 and one of the edges of the wafer holder 511, and one of the edges of the wafer 520 is separated from the wafer holder 511. There is a second minimum margin L2' between one of the edges, the first minimum margin L1' is greater than the second minimum margin L2', and the first minimum margin L1' may be at least 40 microns.

請參照第11圖,其為第9圖第五實施方式中封裝結構500的超音波掃描分析(SAT)影像。具體而言,當晶片520的面積與晶片座511的面積相近時,透過間隔層530可增加塑膠封裝材料540與晶片座511的接觸面積,即塑膠封裝材料540與晶片座511具有足夠的接觸面積時可降低於受應力時塑膠封裝材料540分層的風險,如第11圖所示,經超音波掃描分析後幾乎無分層的狀況,其中分層部分D零星分布於晶片座511的一側。再者,因間隔層530而增加的接觸範圍如第10圖中粗鏈線處。Please refer to Figure 11, which is an ultrasonic scanning analysis (SAT) image of the packaging structure 500 in the fifth embodiment of Figure 9. Specifically, when the area of the chip 520 is similar to the area of the chip seat 511, the contact area between the plastic packaging material 540 and the chip seat 511 can be increased through the spacer layer 530, that is, the plastic packaging material 540 and the chip seat 511 have sufficient contact area. It can reduce the risk of delamination of the plastic packaging material 540 under stress. As shown in Figure 11, there is almost no delamination after ultrasonic scanning analysis, and the delamination part D is scattered on one side of the chip holder 511. . Furthermore, the contact range increased by the spacer layer 530 is as shown by the thick chain line in Figure 10 .

進一步來說,透過間隔層530可增加晶片520設置的彈性,即晶片520的設置可不受限於晶片座511的面積大小,藉以增加封裝結構500的設計彈性,尤其是當將面積較大的晶片設置於體積較小的封裝結構的情況。再者,間隔層530具有保護晶片520的效果,藉以避免外應力撞擊封裝結構500時導致晶片520受損的情況發生。Furthermore, the spacer layer 530 can increase the flexibility of the placement of the chip 520 , that is, the placement of the chip 520 is not limited to the area size of the chip seat 511 , thereby increasing the design flexibility of the packaging structure 500 , especially when placing a larger chip. When installed in a smaller package structure. Furthermore, the spacer layer 530 has the effect of protecting the chip 520, thereby preventing the chip 520 from being damaged when external stress impacts the packaging structure 500.

詳細來說,間隔層530的厚度T可大於等於40微米,且可小於等於500微米。當間隔層530的厚度T小於上述數值範圍時,間隔層530無法達到增加塑膠封裝材料540與晶片座511之間足夠接觸面積的效果;當間隔層530的厚度T大於上述數值範圍時,封裝結構500具有超出規範厚度的問題,或者導線552距離塑膠封裝材料540過近的風險。In detail, the thickness T of the spacer layer 530 may be greater than or equal to 40 microns, and may be less than or equal to 500 microns. When the thickness T of the spacer layer 530 is less than the above numerical range, the spacer layer 530 cannot achieve the effect of increasing the sufficient contact area between the plastic packaging material 540 and the chip holder 511; when the thickness T of the spacer layer 530 is greater than the above numerical range, the packaging structure 500 has the problem of exceeding the specification thickness, or the risk that the wire 552 is too close to the plastic encapsulation material 540.

間隔層530的材質可為矽。具體而言,間隔層530可為矽材質的空白晶圓,但並不以此為限。The material of the spacer layer 530 may be silicon. Specifically, the spacer layer 530 can be a blank wafer made of silicon, but is not limited thereto.

必須說明的是,第1圖、第3圖、第5圖、第7圖、第9圖及第11圖為方便表達其他元件(如導線架、晶片及間隔層等)的設置關係,故省略塑膠封裝材料的標示。It must be noted that Figures 1, 3, 5, 7, 9 and 11 are omitted for the convenience of expressing the arrangement relationship of other components (such as lead frames, chips and spacers, etc.) Labeling of plastic packaging materials.

綜上所述,無論是單晶片封裝或多晶片封裝的封裝型態,皆可透過間隔層使塑膠封裝材料與晶片座具有足夠的接觸面積,藉以降低當封裝結構受應力時塑膠封裝材料分層的風險,並將間隔層應用於單晶片封裝與多晶片封裝的封裝型態皆可增加晶片設置的彈性,即晶片的設置可不受限於晶片座的面積大小,藉以增加封裝結構的設計彈性。再者,間隔層具有保護晶片的效果,藉以避免外應力撞擊封裝結構時導致晶片受損的情況發生。In summary, regardless of the packaging type of single-chip packaging or multi-chip packaging, the spacer layer can be used to ensure that the plastic packaging material and the chip holder have sufficient contact area, thereby reducing the delamination of the plastic packaging material when the packaging structure is stressed. Risks, and applying spacers to single-chip packaging and multi-chip packaging can increase the flexibility of chip placement. That is, the chip placement is not limited to the area size of the chip holder, thereby increasing the design flexibility of the packaging structure. Furthermore, the spacer layer has the effect of protecting the chip, thereby preventing the chip from being damaged when external stress hits the packaging structure.

雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some modifications and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention shall be determined by the appended patent application scope.

100,200,300,400,500:封裝結構 111,211,311,411,511:晶片座 112,212,312,412,512:引腳 121,122,221,222,321,322,421,422,520:晶片 130,231,232,331,332,430,530:間隔層 140,240,340,440,540:塑膠封裝材料 151,251,351,451,551:接墊 152,252,352,452,552:導線 D:分層部分 L1,L1':第一最小邊距 L2,L2':第二最小邊距 T,T1,T2:厚度 100,200,300,400,500:Package structure 111,211,311,411,511: Chip holder 112,212,312,412,512: pin 121,122,221,222,321,322,421,422,520: Chip 130,231,232,331,332,430,530: Spacer layer 140,240,340,440,540: Plastic packaging materials 151,251,351,451,551: Pad 152,252,352,452,552: Wire D: layered part L1,L1': first minimum margin L2,L2': second minimum margin T, T1, T2: Thickness

第1圖繪示依照本發明第一實施方式中封裝結構的平面示意圖; 第2圖繪示第1圖第一實施方式中封裝結構的剖視圖; 第3圖繪示依照本發明第二實施方式中封裝結構的平面示意圖; 第4圖繪示第3圖第二實施方式中封裝結構的剖視圖; 第5圖繪示依照本發明第三實施方式中封裝結構的平面示意圖; 第6圖繪示第5圖第三實施方式中封裝結構的剖視圖; 第7圖繪示依照本發明第四實施方式中封裝結構的平面示意圖; 第8圖繪示第7圖第四實施方式中封裝結構的剖視圖; 第9圖繪示依照本發明第五實施方式中封裝結構的平面示意圖; 第10圖繪示第9圖第五實施方式中封裝結構的剖視圖;以及 第11圖繪示第9圖第五實施方式中封裝結構的超音波掃描分析影像。 Figure 1 is a schematic plan view of a packaging structure according to the first embodiment of the present invention; Figure 2 shows a cross-sectional view of the packaging structure in the first embodiment of Figure 1; Figure 3 is a schematic plan view of a packaging structure according to a second embodiment of the present invention; Figure 4 shows a cross-sectional view of the packaging structure in the second embodiment of Figure 3; Figure 5 is a schematic plan view of a packaging structure according to a third embodiment of the present invention; Figure 6 shows a cross-sectional view of the packaging structure in the third embodiment of Figure 5; Figure 7 is a schematic plan view of a packaging structure according to a fourth embodiment of the present invention; Figure 8 shows a cross-sectional view of the packaging structure in the fourth embodiment of Figure 7; Figure 9 is a schematic plan view of a packaging structure according to a fifth embodiment of the present invention; Figure 10 shows a cross-sectional view of the packaging structure in the fifth embodiment of Figure 9; and FIG. 11 shows an ultrasonic scanning analysis image of the packaging structure in the fifth embodiment of FIG. 9 .

100:封裝結構 100:Package structure

111:晶片座 111:Chip holder

112:引腳 112: pin

121,122:晶片 121,122: Chip

130:間隔層 130: Spacer layer

140:塑膠封裝材料 140:Plastic packaging materials

152:導線 152:Wire

L1:第一最小邊距 L1: first minimum margin

L2:第二最小邊距 L2: second minimum margin

T:厚度 T:Thickness

Claims (13)

一種封裝結構,包含: 一導線架,包含: 一晶片座; 至少二晶片,設置於該導線架的該晶片座上; 至少一間隔層,設置於該至少二晶片的至少一者與該晶片座之間;以及 一塑膠封裝材料,設置於該導線架上,並覆蓋該至少二晶片; 其中,該至少一間隔層的複數邊緣中的一者與該晶片座的複數邊緣中的一者之間具有一第一最小邊距,該至少二晶片的複數邊緣中的一者與該晶片座的該些邊緣中的該者之間具有一第二最小邊距,且該第一最小邊距大於該第二最小邊距。 An encapsulated structure containing: One lead frame, including: a chip holder; At least two chips are arranged on the chip holder of the lead frame; At least one spacer layer is disposed between at least one of the at least two wafers and the wafer holder; and A plastic packaging material is provided on the lead frame and covers the at least two chips; Wherein, there is a first minimum margin between one of the edges of the at least one spacer layer and one of the edges of the wafer holder, and one of the edges of the at least two wafers and the wafer holder There is a second minimum margin between the edges, and the first minimum margin is greater than the second minimum margin. 如請求項1所述的封裝結構,其中該第一最小邊距為至少40微米。The packaging structure of claim 1, wherein the first minimum margin is at least 40 microns. 如請求項1所述的封裝結構,其中該至少一間隔層同時設置於該至少二晶片與該晶片座之間。The packaging structure of claim 1, wherein the at least one spacer layer is simultaneously disposed between the at least two wafers and the wafer holder. 如請求項1所述的封裝結構,其中該至少一間隔層的數量為至少二,且各該間隔層設置於各該晶片與該晶片座之間。The packaging structure of claim 1, wherein the number of the at least one spacer layer is at least two, and each spacer layer is disposed between each of the wafers and the chip holder. 如請求項4所述的封裝結構,其中該至少二間隔層的一者的厚度與該至少二間隔層的另一者的厚度不同。The packaging structure of claim 4, wherein a thickness of one of the at least two spacer layers is different from a thickness of the other of the at least two spacer layers. 如請求項1所述的封裝結構,其中該至少一間隔層的厚度大於等於40微米,且小於等於500微米。The packaging structure of claim 1, wherein the thickness of the at least one spacer layer is greater than or equal to 40 microns and less than or equal to 500 microns. 如請求項1所述的封裝結構,其中該至少一間隔層的材質為矽。The packaging structure of claim 1, wherein the material of the at least one spacer layer is silicon. 如請求項1所述的封裝結構,其中該至少二晶片的該者的面積與該至少二晶片的另一者的面積不同。The packaging structure of claim 1, wherein the area of the one of the at least two chips is different from the area of the other of the at least two chips. 如請求項1所述的封裝結構,其中該至少一間隔層的面積小於該至少二晶片的總和面積。The packaging structure of claim 1, wherein the area of the at least one spacer layer is smaller than the total area of the at least two wafers. 一種封裝結構,包含: 一導線架,包含: 一晶片座; 一晶片,設置於該導線架的該晶片座上; 一間隔層,設置於該晶片與該晶片座之間;以及 一塑膠封裝材料,設置於該導線架上,並覆蓋該晶片; 其中,該間隔層的面積較該晶片的面積小。 An encapsulated structure containing: One lead frame, including: a chip holder; A chip is arranged on the chip holder of the lead frame; a spacer layer disposed between the wafer and the wafer holder; and A plastic packaging material is provided on the lead frame and covers the chip; Wherein, the area of the spacer layer is smaller than the area of the wafer. 如請求項10所述的封裝結構,其中該間隔層的厚度大於等於40微米,且小於等於500微米。The packaging structure of claim 10, wherein the thickness of the spacer layer is greater than or equal to 40 microns and less than or equal to 500 microns. 如請求項10所述的封裝結構,其中該間隔層的複數邊緣中的一者與該晶片座的複數邊緣中的一者之間具有一第一最小邊距,且該第一最小邊距為至少40微米。The packaging structure of claim 10, wherein there is a first minimum margin between one of the edges of the spacer layer and one of the edges of the chip holder, and the first minimum margin is At least 40 microns. 如請求項10所述的封裝結構,其中該間隔層的材質為矽。The packaging structure of claim 10, wherein the material of the spacer layer is silicon.
TW111129040A 2022-08-02 2022-08-02 Package structure TW202408034A (en)

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